JP2009541992A5 - - Google Patents
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- JP2009541992A5 JP2009541992A5 JP2009516479A JP2009516479A JP2009541992A5 JP 2009541992 A5 JP2009541992 A5 JP 2009541992A5 JP 2009516479 A JP2009516479 A JP 2009516479A JP 2009516479 A JP2009516479 A JP 2009516479A JP 2009541992 A5 JP2009541992 A5 JP 2009541992A5
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- JP
- Japan
- Prior art keywords
- substrate
- image sensor
- image area
- layer
- charge carriers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims 13
- 239000002800 charge carrier Substances 0.000 claims 5
Claims (4)
- 電荷キャリアとして正孔を使用するp伝導型の光検出器をそれぞれが有する複数のピクセルを有する画像エリアを伴う画像センサであって、
(a)p伝導型の基板、
(b)過剰な電荷キャリアを前記基板内に追いやってクロストークを低減するため、前記画像エリアに広がり、前記基板に関してあらかじめ定められた電位にバイアスされる、前記基板と前記p伝導型光検出器の間のn伝導型の第1の層、
(c)各ピクセル内の前記第1の層内に配置される1つまたは複数の隣接する能動電子素子、および
(d)前記画像エリア外の基板内に配置され、前記画像エリアと電気的に接続されるCMOS電子サポート回路、
を包含する画像センサ。 - 請求項1に記載の画像センサであって、さらに、前記基板と前記第1の層の間に配置されるp−エピタキシャル層を包含し、それにおいて前記基板は、p+型であり、前記第1の層はn型である、画像センサ。
- 請求項1または2に記載の画像センサであって、前記第1の層は、過剰な電荷キャリアを前記基板内に追いやるように勾配が持たされたドーピングを含む、画像センサ。
- 電荷キャリアとして正孔を使用するp伝導型の光検出器をそれぞれが有する複数のピクセルを有する画像エリアを伴う画像センサを包含するカメラであって、前記画像センサが、
(a)p伝導型の基板、
(b)過剰な電荷キャリアを前記基板内に追いやってクロストークを低減するため、前記画像エリアに広がり、前記基板に関してあらかじめ定められた電位にバイアスされる、前記基板と前記p伝導型光検出器の間のn伝導型の第1の層、
(c)各ピクセル内の前記第1の層内に配置される1つまたは複数の隣接する能動電子素子、および
(d)前記画像エリア外の基板内に配置され、前記画像エリアと電気的に接続されるCMOS電子サポート回路、
を包含するカメラ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/455,985 US7728277B2 (en) | 2005-11-16 | 2006-06-20 | PMOS pixel structure with low cross talk for active pixel image sensors |
US11/455,985 | 2006-06-20 | ||
PCT/US2007/007388 WO2007149137A1 (en) | 2006-06-20 | 2007-03-23 | Pmos pixel structure with low cross talk |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009541992A JP2009541992A (ja) | 2009-11-26 |
JP2009541992A5 true JP2009541992A5 (ja) | 2010-05-06 |
JP5295105B2 JP5295105B2 (ja) | 2013-09-18 |
Family
ID=38255775
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009516479A Active JP5295105B2 (ja) | 2006-06-20 | 2007-03-23 | 低クロストークpmosピクセル構造 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7728277B2 (ja) |
EP (1) | EP2030240B1 (ja) |
JP (1) | JP5295105B2 (ja) |
KR (1) | KR101329432B1 (ja) |
CN (1) | CN101473441B (ja) |
TW (1) | TWI427763B (ja) |
WO (1) | WO2007149137A1 (ja) |
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-
2006
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-
2007
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- 2007-03-23 KR KR1020087030965A patent/KR101329432B1/ko active IP Right Grant
- 2007-03-23 EP EP07753971.6A patent/EP2030240B1/en active Active
- 2007-03-23 WO PCT/US2007/007388 patent/WO2007149137A1/en active Application Filing
- 2007-03-23 JP JP2009516479A patent/JP5295105B2/ja active Active
- 2007-04-27 TW TW096114906A patent/TWI427763B/zh active
-
2010
- 2010-04-01 US US12/752,279 patent/US20100188545A1/en not_active Abandoned
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