JP2009279477A - Apparatus for removing treatment liquid, apparatus for treating substrate, and method of setting up nozzle gap - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a stable liquid removing (liquid cutting-off) capacity of a liquid removing apparatus having a simple and low-cost structure, for a long period of time. <P>SOLUTION: The apparatus for treating a substrate includes a stripping chamber 1. A first air knife 14 that ejects air onto the surface of a substrate after stripping treatment and removes a stripping liquid, is disposed in the stripping chamber 1. The air knife 14 includes a cylindrical body 15 held in a manner intersecting a transfer path, and a plurality of nozzles 16 for ejecting air disposed on the body 15 mutually apart and at prescribed intervals. Each of the plurality of nozzles 16 has a prescribed ejection angle in a direction parallel to the axial direction of the body 15 and is disposed on the cylindrical body 15 so as to eject air in a flat shape in a direction orthogonal thereto and to allow the air in its ejection direction to include a component proceeding from downstream to upstream in the direction of conveying the substrate. The interval between each of the nozzles 16 and the distance from each of the nozzles 16 to a substrate S being conveyed are set up in such a manner that air ejection areas of the neighboring nozzles 16 overlap one after another in the axial direction on the substrate S. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention supplies various processing liquids to a substrate such as a glass substrate for FPD (flat panel display) such as an LCD (liquid crystal display device) or PDP (plasma display), a glass substrate for photomask, a semiconductor substrate, etc. The present invention relates to a substrate processing apparatus.

  Conventionally, the substrate processing has a plurality of processing chambers, and supplies a processing liquid to the substrate in each processing chamber while conveying a substrate such as an LCD or a glass substrate for PDP, to the substrate. The device is known. In addition, this type of apparatus is also known that includes a processing liquid removal device that removes the processing liquid adhering to the processed substrate by gas pressure. For example, Patent Document 1 discloses that a substrate is carried in a processing chamber. An apparatus is disclosed in which an air knife is installed in the vicinity of the outlet, and the processing liquid remaining on the substrate is removed (liquid removal) and dried by discharging air to the processed substrate.

The air knife is a nozzle having a slit-like discharge port, and is configured to discharge air continuously over the entire width direction of the substrate. For example, as disclosed in Patent Document 1, the air knife is roughly Specifically, a pair of long plate members are overlapped with each other via a seal member or the like, and a slit-like discharge port (gap) is provided along one side thereof.
JP-A-9-136046

  Conventional air knives are required to accurately manage the gap between the discharge ports because the accuracy of the gap between the discharge ports affects the air discharge state.

  However, air knives tend to be longer with the recent increase in size of substrates, which makes it easier to cause fluctuations in gap dimensions due to bending and partial blockage due to intrusion (clogging) of foreign matter. In particular, it is difficult to maintain the liquid removal (liquid removal) performance.

  Therefore, high strength materials such as stainless steel are applied, and the thickness dimension of the constituent members is further increased to increase the bending rigidity of the air knife and the maintenance frequency is increased. This is a cause of high costs and a decrease in productivity.

  The present invention has been made in view of the circumstances as described above, and an object of the present invention is to provide a long-term stable liquid removal (liquid draining) performance with a simple and inexpensive configuration. .

  In order to solve the above-described problems, the present invention provides a processing liquid removal apparatus that removes a processing liquid on a substrate surface by discharging a gas onto the surface of the substrate being transferred so as to cross a substrate transfer path. A cylindrical main body portion to be supported, and a plurality of nozzle portions that are provided at a plurality of positions aligned in the axial direction in the main body portion and discharge the gas supplied to the inside of the main body portion toward the transport substrate. Each nozzle portion has a predetermined jet angle in a direction parallel to the axial direction and discharges the gas in a flat shape in a direction perpendicular thereto, and the gas discharge direction is in the substrate transport direction. The interval between the nozzle portions is provided so as to include a component from the downstream side to the upstream side, and the gas discharge regions of the adjacent nozzle portions overlap in the axial direction on the substrate. And each In which the distance from the nozzle portion to transfer board is set.

  According to such a configuration, since the gas is discharged from the nozzle portions arranged in the axial direction along the main body portion, the area of the gas discharge port (nozzle portion) can be reduced. In addition, since the intervals between the nozzle portions are set so that the gas discharge regions of the adjacent nozzle portions overlap in the axial direction on the substrate, the direction across the substrate while suppressing entry (clogging) of foreign matter The gas can be continuously discharged over the range. In addition, since it has a structure having a high bending rigidity as a whole, the main part of which is a cylindrical main body provided with a nozzle part, it is possible to enjoy a high deflection preventing effect with a relatively simple and inexpensive structure. .

  In such a configuration, the interval between the nozzle portions is such that the ratio of the overlapping portions (overlapping regions) in the gas discharge region is in the following range in relation to the distance from the nozzle portion to the transport substrate. It is preferable that it is set. Specifically, the distance from each nozzle part to the transport substrate is set in a range of 10 mm or more and 50 mm or less, and the ratio of the overlapping area to the gas ejection area of one nozzle part is set for a pair of adjacent nozzle parts. It is preferable that the interval between the nozzle portions is set so as to be in the range of 5% to 40%. Further, when the interval from each nozzle part to the transport substrate is set in a range of more than 50 mm and 100 mm or less, each nozzle part is further set so that the ratio of the overlapping area is in the range of 30% to 60%. When the distance from the transport substrate to the transport substrate is set in the range of more than 100 mm and 150 mm or less, the interval between the nozzle portions is set so that the ratio of the overlapping regions is in the range of 50% to 80%. Is preferred.

  According to such a configuration, the gas pressure can be applied continuously and satisfactorily over the entire substrate in relation to the distance from the nozzle portion to the transport substrate, and high liquid drainage performance can be achieved. It can be enjoyed.

  On the other hand, the substrate processing apparatus according to the present invention is a substrate processing apparatus including the processing liquid removing apparatus as described above, and supplies the chemical liquid to the transport substrate as the processing liquid to perform the chemical processing on the substrate. A chemical processing chamber; a cleaning processing chamber for cleaning the substrate by supplying a cleaning liquid to the substrate after the chemical processing; and a drying processing chamber for blowing gas to the substrate after the cleaning processing to dry the chemical processing. In the chamber, the treatment liquid removing device is provided as means for suppressing the removal of the chemical solution from the chemical treatment chamber to the cleaning treatment chamber by discharging the gas to the substrate after the chemical treatment and removing the chemical solution on the surface thereof, When this processing liquid removing apparatus is the first processing liquid removing apparatus, separately from this, the substrate is removed by discharging gas into the substrate after the cleaning process to remove the cleaning liquid on the surface. Dry A second processing liquid removing device is provided, and the second processing liquid removing device is continuously provided in a direction crossing the transport path provided in the main body and supported by the main body so as to cross the transport path of the substrate. And a slit-like discharge port extending in a general manner, and by discharging gas from the slit-like discharge port to the substrate after the cleaning process, the cleaning liquid on the substrate surface is removed.

  This substrate processing apparatus, as a processing liquid removal apparatus, discharges gas from a plurality of nozzles arranged along the main body (first processing liquid removal apparatus) and discharges gas from a slit-shaped discharge port ( The second processing liquid removal apparatus) is used in combination. In other words, a processing liquid removing device that discharges gas from the slit-shaped discharge port can maintain a gap accuracy of the slit-shaped discharge port by managing the bending of the gas, and the gas at a constant pressure over the entire slit-shaped discharge port. Since the gas can be discharged uniformly, the reliability is still high when the gas is continuously discharged over the entire substrate without interruption. Therefore, as in the above-described substrate processing apparatus, the spraying of gas is mainly for the purpose of suppressing taking out of the chemical solution. In this way, a processing liquid removing device (first processing liquid removing device) having a simple and inexpensive configuration in which a plurality of nozzles are arranged in the main body is disposed, and on the other hand, the liquid on the substrate is completely removed and dried. For the drying processing chamber that is required, if a processing liquid removing device (second processing liquid removing device) having a slit-like discharge port, which is more advantageous in securing gas discharge continuity, is arranged, While satisfying the liquid removal (liquid removal) performance required in the chemical treatment chamber and the drying treatment chamber, respectively, it is possible to reduce the cost of one of the two treatment liquid removal devices and to reduce the device cost. Become.

  On the other hand, a nozzle interval setting method according to the present invention is a nozzle interval setting method for the processing liquid removing apparatus in which a plurality of nozzle portions are arranged, and the nozzle portions are arranged at predetermined intervals in the axial direction. When the main body is fixed at a predetermined fixed position where the distance from each nozzle unit to the transport substrate is a predetermined dimension, the predetermined dimension increases as the predetermined dimension increases according to the fixed position. With respect to the pair of nozzle portions, the predetermined interval between the nozzle portions is set so that the ratio of the overlapping region to the gas discharge region of one nozzle portion is increased.

  If the interval between the nozzle portions is set based on such a method, the gas pressure can be applied continuously and satisfactorily evenly over the entire substrate in relation to the distance from the nozzle portion to the transport substrate. It is possible to enjoy advanced liquid drainage performance.

  According to the substrate processing apparatus of the present invention, gas can be continuously discharged over the substrate in a direction crossing the substrate, while foreign matter intrusion and bending are prevented with a simple and inexpensive configuration. can do. Therefore, it is possible to enjoy a long-term stable liquid removal (liquid removal) performance with an inexpensive configuration.

  A preferred embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic view showing a substrate processing apparatus according to the present invention (a substrate processing apparatus to which a processing liquid removing apparatus according to the present invention is applied). The substrate processing apparatus shown in the figure supplies a stripping solution to the surface (upper surface) of a glass substrate S (hereinafter referred to as substrate S) such as an LCD glass substrate on which a resist film is formed, whereby the surface of the substrate S is applied. A peeling process for peeling the formed film is performed, and a cleaning process and a drying process are further performed on the substrate S after the peeling process. As shown in FIG. The peeling processing chamber 1, the cleaning processing chamber 2, and the drying processing chamber 3 are provided.

  In each of the processing chambers 1 to 3, a plurality of transport rollers 10 are arranged at predetermined intervals, and the substrate S is supported by the transport rollers 10, and the transport rollers 10 drive the left to right sides in the drawing. It is the structure conveyed toward. The transport roller 10 is tilted in a direction orthogonal to the transport direction of the substrate S, whereby the substrate S is transported in a state where it is tilted by a predetermined angle with respect to the horizontal plane. In the following description, “upstream side” and “downstream side” are based on the transport direction of the substrate S.

  The peeling process chamber 1 is a chemical solution processing chamber according to the present invention, and a plurality of shower nozzles 12 for supplying a peeling solution (chemical solution) to the substrate S are provided near the ceiling of the peeling process chamber 1. ing. The stripping liquid supply / discharge system (not shown) supplies stripping liquid stored in a tank to the shower nozzle 12 by driving a pump, and supplies the substrate S to the substrate S, and then from the inner bottom of the stripping processing chamber 1. It is configured to derive and return to the tank again. By circulating the stripping solution in this way, mass consumption of the stripping solution is suppressed and the stripping solution is effectively utilized.

  In the separation processing chamber 1, an air knife 14 is further disposed in the vicinity of the partition wall on the cleaning processing chamber side (a position downstream of the discharge region of the separation liquid by the shower nozzle 12).

  The air knife 14 (referred to as a first air knife 14; corresponding to a first processing liquid removing device) removes the stripping liquid remaining on the substrate by discharging air onto the substrate S.

  The first air knife 14 is disposed above the transport path of the substrate S constituted by the transport rollers 10 so as to cross the transport path. As shown in FIG. 2A, the air knife 14 is formed on a peripheral surface of a cylindrical main body 15 extending in a direction orthogonal to the transport direction of the substrate S (hereinafter referred to as the width direction of the substrate S). A plurality of nozzle portions 16 are provided in a row along the axial direction of the air, and air supplied into the main body 15 from an air supply source (not shown), specifically, cleanliness and temperature / humidity are adjusted to a predetermined level. The so-called CDA (Clean Dry Air; hereinafter simply referred to as air) is discharged from each nozzle section 16.

  Each nozzle portion 16 has a predetermined injection angle θ1 in a direction parallel to the axial direction, and is configured to discharge air in a flat shape in a direction orthogonal thereto (in short, air is discharged in a film shape). In addition, as shown in FIG. 2B, the air discharge regions E on the substrate of the adjacent nozzle portions 16 are partially overlapped with each other in the axial direction (that is, the width direction of the substrate S). Are arranged at predetermined intervals.

  Further, as shown in FIG. 3, each nozzle section 16 is inclined by a predetermined angle θ2 with respect to the upper surface of the transport substrate S so that the air discharge direction includes a component from the downstream side to the upstream side in the substrate transport direction. It is provided as follows. With this configuration, air can be discharged continuously from the downstream side toward the upstream side over the entire width direction with respect to the surface of the transport substrate S after the peeling process.

  As shown in FIG. 1, a plurality of shower nozzles 20 for supplying a cleaning liquid (pure water in this example) to the substrate S are arranged in the cleaning processing chamber 2 on both upper and lower sides across the transport path. Yes. A cleaning liquid supply / discharge system (not shown) supplies the cleaning liquid stored in the tank to the shower nozzle 20 by driving a pump, and supplies the cleaning liquid to the substrate S from the nozzle 20 and then leads out from the inner bottom of the peeling processing chamber 1. It is configured to be discarded.

  In the drying processing chamber 3, a pair of air knives 22 and 22 (referred to as a second air knife; corresponding to a second processing liquid removing device) are arranged. The second air knives 22 and 22 are arranged above and below the conveyance path, and the cleaning liquid remaining on the substrate S is removed by discharging air to the upper and lower surfaces of the conveyance substrate S. It is what is dried.

  The second air knives 22 and 22 are respectively arranged so as to cross the transport path of the substrate S. Each air knife 22 comprises a so-called slit nozzle provided with a slit-like discharge port extending in the longitudinal direction in the main body, and is configured to discharge air in a film shape along the longitudinal direction from the slit-like discharge port. Yes. Further, as shown in FIG. 4, each of the air knives 22 and 22 has a predetermined angle θ3 with respect to the upper surface of the transport substrate S so that the air discharge direction includes a component from the downstream side to the upstream side in the substrate transport direction. It is provided to tilt. With this configuration, air can be discharged continuously from the downstream side toward the upstream side over the entire width direction with respect to the surface of the transport substrate S after the cleaning process.

  In the substrate processing apparatus configured as described above, the substrate S is first carried into the peeling processing chamber 1. In the peeling processing chamber 1, first, the peeling liquid is supplied to the upper surface of the substrate S in order from the front end side of the substrate S by the shower nozzle 12. In this way, the stripping solution is supplied to the substrate S, and the resist film formed on the substrate surface is stripped by flowing down along the substrate surface. When the front end of the substrate reaches the air discharge position by the first air knife 14 as the substrate S is transported, air is discharged from the first air knife 14 to the substrate S. Specifically, as described above, air is discharged continuously from the downstream side toward the upstream side over the entire width direction of the substrate S. Thereby, the stripping solution on the substrate S is sequentially removed from the front end side of the substrate. By removing the stripping solution in this way, it is possible to prevent the stripping solution from being removed from the stripping processing chamber 1 to the cleaning processing chamber 2, and to suppress the consumption of the stripping solution that is circulated in the stripping processing chamber 1. Become.

  Next, the substrate S is carried into the cleaning processing chamber 2. In the cleaning processing chamber 2, the cleaning liquid is supplied to the upper and lower surfaces of the substrate S sequentially from the front end side of the substrate S by the shower nozzle 20, thereby cleaning the entire substrate. The substrate S after the cleaning processing is further carried into the drying processing chamber 3. In the drying processing chamber 3, air is discharged from the second air knives 22, 22 to the upper and lower surfaces of the substrate S. Also in this case, as described above, air is continuously discharged over the entire width direction of the substrate S and from the downstream side toward the upstream side, whereby the cleaning liquid adhering to the substrate S is sequentially removed from the front end side. Will be.

  Then, when the substrate S is finally carried out of the drying processing chamber 3, a series of processes of peeling, cleaning and drying with respect to the substrate S is completed.

  According to such a substrate processing apparatus, in particular, since the first air knife 14 as described above is provided in the peeling processing chamber 1, the structure is simple and inexpensive as compared with the conventional apparatus of this type, and has a long period of time. In addition, there is an effect that the stripping liquid can be prevented from being taken out stably.

  That is, according to the first air knife 14, gas is discharged from the nozzle portions 16 arranged in the axial direction along the main body 15, so that the area of the air discharge port (nozzle portion) can be reduced. In addition, since the intervals between the nozzle portions 16 are set so that the air discharge regions E of the adjacent nozzle portions 16 overlap in the axial direction on the substrate, the conveyance substrate while suppressing entry (clogging) of foreign matters. Gas can be continuously discharged over the entire width direction of S. In addition, since it has a structure having high bending rigidity as a whole, the main body of which is a cylindrical main body 15 provided with a nozzle portion 16, even when a light and inexpensive material such as a resin is applied, it has a high deflection preventing effect. Can be obtained. Therefore, it is possible to enjoy high liquid removal (liquid draining) performance by discharging air well over the entire width direction of the substrate S in a long and stable manner with a simple and inexpensive configuration. As a result, it is possible to satisfactorily suppress the removal liquid from being taken out.

  For the first air knife 14, it is important to ensure that the air pressure is applied continuously and appropriately over the width direction of the substrate S in order to ensure the liquid draining performance. As shown in the test result 5, by setting the overlapping rate between the air ejection regions E of the adjacent nozzle portions 16 within a certain range according to the distance (interval) from the nozzle portion 16 to the substrate S. It was confirmed that good liquid drainage performance can be obtained.

  The test results shown in FIG. 6 show that the distance (interval h) from the nozzle unit 16 to the substrate S and the pair of adjacent nozzle units 16 on the substrate under a constant discharge pressure, jet angle θ1, and discharge angle θ2. This is a result of evaluating the liquid drainage performance using the overlap rate (overlap rate) R between the air discharge regions E as a variable. The evaluation was performed by visually confirming the remaining state of the treatment liquid on the substrate. Here, as shown in FIGS. 1 and 3, the interval h is a linear distance between the substrate surface and the tip of the nozzle portion along the direction orthogonal to the substrate surface, and the overlap rate R is an air discharge region ( It is the ratio ((Wb / Wa) × 100) of the overlapping area (width Wb) to the total width Wa). The test was performed on a plurality of types of treatment liquids within the range of air discharge pressure 0.1 to 0.3 MPa, jet angle (θ1) 90 °, 110 °, and discharge angle (θ2) 40 ° to 70 °. However, since almost common results were obtained, only one result is shown in FIG.

From this test result,
In the range where the distance h between the nozzle part 16 and the substrate S is 10 mm or more and 50 mm or less, the overlapping rate R is within the range of 5% or more and 40% or less,
In the range where the distance h between the nozzle portion 16 and the substrate S is more than 50 mm and 100 mm or less, the overlapping rate R is in the range of 30% to 60%,
In the range where the distance h between the nozzle portion 16 and the substrate S is more than 100 mm and 150 mm or less, good liquid draining performance can be obtained by setting the overlapping rate R within the range of 50% to 80%. Can be considered.

  Further, as the distance (interval h) from each nozzle portion 16 to the transport substrate S increases, it is effective to increase the overlap rate R of the air discharge region E in obtaining good liquid drainage performance. Can be considered. Therefore, when the fixed position of the first air knife 14 is determined in advance, the overlap is increased as the distance increases according to the distance (interval h) from the nozzle portion 16 to the transport substrate S at the fixed position. In order to obtain a good liquid removal performance, it is effective to set the arrangement interval between the nozzle portions 16 in the first air knife 14 in advance so that the rate R is increased.

  By the way, in this test result, for example, in the range where the distance h between the nozzle portion 16 and the substrate S is 50 mm or less, the liquid drainage performance is deteriorated when the overlap rate R is less than 5% and exceeds 40%. However, this is thought to be due to the following reasons. That is, since air is discharged from the nozzle portion 16 with an expansion of the injection angle θ1 along the axial direction of the main body 15, the striking force (air pressure acting on the substrate S) is reduced at the end of the air discharge region. easy. In the first air knife 14, such a decrease in striking force is compensated by providing each nozzle portion 16 so that the air discharge regions E overlap each other, but when the overlap rate R is less than 5%, It is considered that the hitting force drop is not sufficiently compensated, and as a result, the treatment liquid is not sufficiently removed and tends to remain on the substrate. On the contrary, when the overlap rate R exceeds 40%, the air discharged from the adjacent nozzle portions 16 strongly interferes with the overlap portion, resulting in uneven hitting force, and on the substrate at the weak hitting portion. It is considered that the cleaning liquid remains. Such a mechanism is considered to be the same when the distance h between the nozzle portion 16 and the substrate S exceeds 50 mm.

  In this embodiment, the first air knife 14 having the above-described structure (referred to as a pipe nozzle structure for convenience) is installed only for the separation processing chamber 1 out of the separation processing chamber 1 and the drying processing chamber 3 where the air knife is installed. In the drying process chamber 3, a second air knife 22 having a slit nozzle structure having a slit-like opening is adopted. Of course, the second air knife 22 in the drying process chamber 3 is the same as the first air knife 14. A pipe nozzle structure can also be applied. However, the slit nozzle structure requires precise operation such as precise clearance adjustment. Except for this point, it is possible to uniformly discharge air at a constant pressure from the slit-shaped discharge port in the longitudinal direction. Therefore, the reliability in discharging gas continuously in the width direction of the substrate S is high. Accordingly, the blowing of air is mainly for the purpose of suppressing the removal liquid from being removed, and the first air knife 14 in the separation processing chamber 1 is less affected because it is cleaned later even if the removal liquid remains on the substrate. In the above-described embodiment, a pipe nozzle structure is applied as the second air knife 22 of the drying processing chamber 3 in which the cleaning liquid on the substrate needs to be completely removed and dried. According to the configuration of the substrate processing apparatus, the liquid removal performance required in each of the peeling processing chamber 1 and the drying processing chamber 3 is ensured satisfactorily, and as a whole, a pipe is used as one of the two air knives. By providing the first air knife 14 having the nozzle structure, there is an advantage that the apparatus cost can be suppressed.

In the above-described embodiment, in the cleaning processing chamber 2 and the drying processing chamber 3, the peeling liquid or the like is removed by blowing air onto the substrate S, but it goes without saying that gases other than air, such as nitrogen (N You may make it spray inert gas, such as ₂ ).

  In the above-described embodiment, the case where the substrate S is processed while being transported in the tilted posture (the posture tilted from one side to the other side in the direction orthogonal to the transport direction) has been described. The present invention can also be applied to an apparatus that performs processing on a substrate S while the substrate S is transported in a horizontal posture.

It is the schematic which shows an example of embodiment of the substrate processing apparatus which concerns on this invention. (A) It is the II-II sectional view taken on the line of FIG. 1 which shows the structure of the 1st air knife arrange | positioned in a peeling process chamber, (b) is the schematic which shows the air discharge area | region of each nozzle part on a board | substrate. It is a schematic side view showing the configuration of the first air knife. It is a side schematic diagram showing the composition of the 2nd air knife arranged in a drying treatment room. It is a table | surface which shows the result of the evaluation test of a 1st air knife.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Separation processing chamber 2 Cleaning processing chamber 3 Drying processing chamber 10 Transport roller 12, 20 Shower nozzle 14 First air knife 15 Main body 16 Nozzle part 22 Second air knife S Substrate

Claims (6)

In the processing liquid removing apparatus that removes the processing liquid on the substrate surface by discharging gas onto the surface of the substrate being transported,
A cylindrical main body supported so as to cross the substrate conveyance path, and gas supplied to the inside of the main body provided at a plurality of positions aligned in the axial direction of the main body toward the conveyance substrate A plurality of nozzles for discharging,
Each nozzle section has a predetermined jet angle in a direction parallel to the axial direction, and discharges the gas in a flat shape in a direction perpendicular thereto, and the gas discharge direction is a downstream side in the substrate transport direction. Between the nozzle portions and each of the nozzle portions so that the gas discharge regions of the adjacent nozzle portions overlap with each other in the axial direction on the substrate. A processing liquid removing apparatus, wherein a distance from a nozzle portion to a transfer substrate is set. In the processing liquid removal apparatus of Claim 1,
The distance from each nozzle part to the transport substrate is set in a range of 10 mm or more and 50 mm or less, and the ratio of the overlapping area to the gas ejection area of one nozzle part is 5% or more and 40% for a pair of adjacent nozzle parts. The processing liquid removing apparatus, wherein the interval between the nozzle portions is set so as to be in the following range. In the processing liquid removal apparatus of Claim 1,
The distance from each nozzle part to the transport substrate is set in the range of more than 50 mm and 100 mm or less, and the ratio of the overlapping area to the gas discharge area of one nozzle part is 30% or more and 60 for a pair of adjacent nozzle parts. %. The processing liquid removing apparatus, wherein the intervals between the nozzle portions are set so as to be in the range of% or less. In the processing liquid removal apparatus of Claim 1,
The distance from each nozzle part to the transport substrate is set in the range of more than 100 mm and 150 mm or less, and the ratio of the overlapping area to the gas ejection area of one nozzle part is 50% or more and 80 for a pair of adjacent nozzle parts. %. The processing liquid removing apparatus, wherein the intervals between the nozzle portions are set so as to be in the range of% or less. A substrate processing apparatus including the processing liquid removing apparatus according to any one of claims 1 to 4,
A chemical processing chamber for performing chemical processing on the substrate by supplying a chemical to the transport substrate as the processing liquid, and a cleaning processing chamber for cleaning the substrate by supplying cleaning liquid to the substrate after the chemical processing, A drying treatment chamber for drying by blowing gas on the substrate after the cleaning treatment,
The treatment liquid removing apparatus is a means for suppressing the removal of the chemical solution from the chemical treatment chamber to the cleaning treatment chamber by discharging gas to the chemical treatment chamber and removing the chemical solution on the surface thereof. When the treatment liquid removal apparatus is provided as a first treatment liquid removal apparatus, separately from this, the cleaning liquid on the surface is removed by discharging gas to the substrate after the washing treatment into the drying treatment chamber. A second treatment liquid removing device for drying the substrate is provided by:
The second processing liquid removing apparatus has a main body part supported so as to cross the substrate conveyance path, and a slit-like discharge port provided in the main body part and continuously extending in a direction crossing the conveyance path. A substrate processing apparatus, wherein a cleaning liquid on a substrate surface is removed by discharging a gas from the slit-like discharge port to the substrate after the cleaning process. It is the space | interval setting method of the said nozzle part of the process liquid removal apparatus of Claim 1, Comprising:
When fixing the main body portion in which the nozzle portions are arranged at predetermined intervals in the axial direction at a predetermined fixing position where the distance from each nozzle portion to the transport substrate is a preset dimension,
In accordance with the fixed position, the nozzle portions are arranged so that the ratio of the overlap region to the gas discharge region of one nozzle portion increases with respect to the pair of adjacent nozzle portions as the preset dimension increases. The nozzle interval setting method is characterized in that the predetermined interval is set.

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