JP2009271236A - Method of manufacturing organic semiconductor device, and element substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a flexible organic semiconductor device, and to provide an element substrate. <P>SOLUTION: The method of manufacturing an organic semiconductor device 11 comprises steps of: producing an element substrate 1 by fixing a shielding substrate 6 formed of a glass substrate to one main surface 4a of a flexible resin substrate 4 and making a support substrate 2 formed of a glass substrate adhere to the other main surface 4b of the resin substrate 4; forming an organic semiconductor element 12 that is an organic EL element having an organic semiconductor layer 14 on the shielding substrate 6 of the element substrate 1; and removing the support substrate 2 from an element substrate 1A. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a flexible organic semiconductor device and an element substrate for manufacturing the organic semiconductor device.

  In recent years, a flexible organic semiconductor device and a flexible element substrate for manufacturing the organic semiconductor device are known. Resin is often used as the material for such a flexible substrate. However, since the resin permeates moisture, gas, etc., there is a problem that the organic semiconductor element formed on the substrate is rapidly deteriorated. Therefore, there is a demand for an element substrate that can suppress the transmission of moisture and the like.

Patent Document 1 discloses an element substrate in which a gas barrier layer made of SiO ₂ or the like is formed on a plastic substrate by a CVD method or the like. When an organic semiconductor device is manufactured using this element substrate, an organic semiconductor element is formed on the gas barrier layer. However, it is difficult to form a gas barrier layer without forming a pinhole or the like on a plastic substrate by a CVD method, and the technique of Patent Document 1 has a problem that moisture and the like cannot be sufficiently shielded.

  Therefore, Patent Document 2 discloses an element substrate in which a plastic layer is bonded to both surfaces or one surface of a glass layer. When manufacturing an organic semiconductor device using this element substrate, an organic semiconductor element is formed in either a plastic layer or a glass layer. In the technique of Patent Document 2, when a plastic layer is bonded to one side of a glass layer, there is a problem that the element substrate is deformed due to warping due to heat during manufacturing due to the difference in linear expansion coefficient between the two layers. Patent Document 2 also discloses a technique that can suppress deformation by adhering a plastic layer to both surfaces of a glass layer. However, since the plastic layer permeates moisture and the like in the surface direction, the technique of Patent Document 2 has a problem that moisture and the like are not sufficiently shielded.

Patent Document 3 discloses an element substrate in which thin glass is provided on both surfaces of a resin layer. When manufacturing an organic semiconductor device using this element substrate, an organic semiconductor element is formed on one thin glass plate. Thus, with the technique of patent document 3, the deformation | transformation by the curvature in manufacture was able to be suppressed, improving the shielding capability, such as the water | moisture content of a surface direction, by adhere | attaching thin glass on both surfaces of a resin layer.
JP 2003-51383 A JP 11-329715 A Japanese Patent No. 3059866

  However, in the technique of Patent Document 3, since thin glass is provided on both surfaces of the resin layer, there is a problem that the flexibility of an organic semiconductor device manufactured using this element substrate is small.

  The present invention has been made in order to solve the above-described problems, and an object thereof is to provide a method for manufacturing a highly flexible organic semiconductor device and an element substrate.

  In order to achieve the above object, according to the first aspect of the present invention, a shielding substrate made of an inorganic insulating material is fixed to one main surface of a flexible resin substrate, and the other main surface of the resin substrate is fixed. A step of fabricating an element substrate by adhering a support substrate to the substrate, a step of forming an organic semiconductor element on a shielding substrate of the element substrate, and a step of removing the support substrate from the element substrate. An organic semiconductor device manufacturing method.

  The invention according to claim 2 is the method of manufacturing an organic semiconductor device according to claim 1, wherein the thickness of the support substrate is larger than the thickness of the resin substrate.

  The invention according to claim 3 is the method of manufacturing an organic semiconductor device according to claim 1 or 2, wherein the thickness of the resin substrate is larger than the thickness of the shielding substrate.

  According to a fourth aspect of the present invention, the force for fixing the resin substrate and the shielding substrate is larger than the force for bonding the support substrate and the resin substrate. 4. The method for producing an organic semiconductor device according to any one of items 3.

  The invention according to claim 5 is characterized in that one main surface of the resin substrate or the surface of the shielding substrate fixed to one main surface of the resin substrate is roughened. A method for producing an organic semiconductor device according to any one of claims 1 to 4.

  The invention according to claim 6 is the method for producing an organic semiconductor device according to any one of claims 1 to 5, wherein the resin substrate is white turbid.

  According to a seventh aspect of the present invention, a flexible resin substrate, a shielding substrate fixed to one main surface of the resin substrate, and a removable main surface of the resin substrate are detachably bonded. And a supporting substrate.

  The invention according to claim 8 is the element substrate according to claim 7, wherein the thickness of the support substrate is larger than the thickness of the resin substrate.

  The invention according to claim 9 is the element substrate according to claim 7 or 8, wherein the thickness of the resin substrate is larger than the thickness of the shielding substrate.

  The invention described in claim 10 is characterized in that a force for fixing the resin substrate and the shielding substrate is smaller than a force for bonding the support substrate and the resin substrate. 10. The element substrate according to any one of items 9.

  The invention according to claim 11 is characterized in that one main surface of the resin substrate or the surface of the shielding substrate fixed to one main surface of the resin substrate is roughened. It is an element substrate of any one of Claims 7-10.

  The invention according to claim 12 is the element substrate according to any one of claims 7 to 11, wherein the resin substrate is white turbid.

  According to the present invention, the support substrate is detachably bonded to one surface of the resin substrate to form the organic semiconductor element, and then the support substrate is removed. Thereby, the flexibility of the completed organic semiconductor device can be improved.

(First embodiment)
Hereinafter, an element substrate according to a first embodiment of the present invention will be described with reference to the drawings. The element substrate according to the first embodiment is for manufacturing a flexible organic EL element, organic transistor, or the like. FIG. 1 is a cross-sectional view of an element substrate according to the first embodiment.

  The element substrate 1 is for manufacturing an organic semiconductor device having optical transparency and flexibility and having an organic semiconductor element such as an organic EL element or an organic transistor. As shown in FIG. 1, the element substrate 1 includes a support substrate 2, an adhesive layer 3, a resin substrate 4, a fixing layer 5, and a shielding substrate 6.

  The support substrate 2 is for suppressing the deformation of the element substrate 1 in a process of manufacturing an organic semiconductor element described later. The support substrate 2 is made of a glass substrate having a thickness of about 500 μm. The thickness of the support substrate 2 is not limited to 500 μm, but is preferably larger than the thickness of the resin substrate 4. The support substrate 2 is configured to transmit light. In the manufacturing process of the organic semiconductor device, the support substrate 2 is peeled off after the organic semiconductor element is formed.

  The adhesive layer 3 is for detachably bonding the support substrate 2 and the resin substrate 4. The adhesive layer 3 is made of an acrylic UV curable resin.

  The resin substrate 4 has flexibility. The resin substrate 4 is made of PEN (polyethylene naphthalate) having a thickness of about 100 μm. The resin substrate 4 is clouded to such an extent that light can be transmitted in order to scatter light. A shielding substrate 6 is fixed to one main surface 4 a of the resin substrate 4 via a fixing layer 5. The support substrate 2 is detachably bonded to the other main surface 4 b of the resin substrate 4 via the adhesive layer 3. One main surface 4 a of the resin substrate 4 is roughened in order to scatter light and increase the fixing force with the shielding substrate 6.

  The fixing layer 5 is for fixing the resin substrate 4 and the shielding substrate 6 together. The fixing layer 5 is made of an epoxy-based cured resin. Here, the force for fixing the resin substrate 4 and the shielding substrate 6 by the fixing layer 5 is larger than the force for bonding the support substrate 2 and the resin substrate 4 by the adhesive layer 3.

  The shielding substrate 6 is for protecting the organic semiconductor element by shielding moisture, gas, and the like that permeate the resin substrate 4. The shielding substrate 6 is made of a glass substrate having a thickness of about 50 μm. The shielding substrate 6 is configured to transmit light. The upper surface (outer surface) of the shielding substrate 6 is a main growth surface 8 on which an organic semiconductor element is formed. The lower surface of the shielding substrate 6 is roughened in order to scatter light and increase the adhesion with the resin substrate 4.

  As described above, in the element substrate 1 according to the first embodiment, the support substrate 2 is detachably bonded to the resin substrate 4. Thereby, the support substrate 2 can be removed from the resin substrate 4 after forming the organic semiconductor element. As a result, the flexibility of the element substrate 1 after completion of the organic semiconductor device can be improved.

  In the element substrate 1, the support substrate 2 made of a glass substrate is bonded to the resin substrate 4. Thereby, it can suppress that the element substrate 1 deform | transforms by curvature etc. in the process of heating, such as a photolithography process. Furthermore, in the element substrate 1, deformation can be further suppressed by making the support substrate 2 thicker than the resin substrate 4.

(Second Embodiment)
Hereinafter, an organic semiconductor device according to a second embodiment of the present invention will be described with reference to the drawings. The organic semiconductor device 11 according to the second embodiment is applied to a surface light source illumination, a surface light source backlight, and the like. FIG. 2 is a cross-sectional view of the organic semiconductor device according to the second embodiment. In addition, the same code | symbol is attached | subjected to the same structure as 1st Embodiment, and description is abbreviate | omitted.

  As shown in FIG. 2, the organic semiconductor device 11 according to the second embodiment includes an element substrate 1 </ b> A and an organic semiconductor element 12.

  The element substrate 1 </ b> A includes a resin substrate 4, a fixing layer 5, and a shielding substrate 6. In the organic semiconductor device 11, the support substrate 2 is removed from the resin substrate 4 during the manufacturing process (see the dotted line in FIG. 2).

  The organic semiconductor element 12 is an organic EL (electroluminescence) element that can emit light. The organic semiconductor element 12 includes an anode electrode 13, an organic semiconductor layer 14, a cathode electrode 15, an anode terminal 16, an insulating film 17, and a sealing film 18.

  The anode electrode 13 is for injecting holes into the organic semiconductor layer 14. The anode electrode 13 is formed on the main growth surface 8 of the element substrate 1A. The anode electrode 13 is made of ITO (indium tin oxide) having a thickness of about 100 nm capable of transmitting light. One end of the anode electrode 13 is connected to an anode terminal 16 made of an Al film.

The organic semiconductor layer 14 is for emitting light. The organic semiconductor layer 14 is formed on the anode electrode 13 in an electrically connected state. In the organic semiconductor layer 14, a hole transport layer and an electron transport layer are sequentially stacked from the anode electrode 13 side. The hole transport layer is made of an NPD (diphenylnaphthyldiamine) film having a thickness of about 50 nm. The electron transport layer has a thickness of about 50 nm and is made of a quinolinol aluminum complex (Alq ₃ ) film mixed with a dye. The refractive index of the organic semiconductor layer 14 is about 1.73. Further, copper phthalocyanine (CuPc) may be laminated between the anode electrode 13 and the organic semiconductor layer 14 in order to promote hole injection from the anode electrode 13.

The cathode electrode 15 is for injecting electrons into the organic semiconductor layer 14. The cathode electrode 15 is formed on the organic semiconductor layer 14 in an electrically connected state. The cathode electrode 15 is made of an Al film having a thickness of about 100 nm. One end of the cathode electrode 15 is formed on the main growth surface 8 of the element substrate 1A and functions as an external terminal. The cathode electrode 15 is insulated from the anode electrode 13 by an insulating film 17 made of SiO ₂ .

  The sealing film 18 is for sealing the organic semiconductor layer 14 and protecting it from moisture and the like. The sealing film 18 is made of an insulating synthetic resin. The sealing film 18 is formed so as to cover a region where the organic semiconductor layer 14 is formed.

  Next, the operation of the organic semiconductor device according to the second embodiment will be described.

  First, in the organic semiconductor device 11, a voltage is applied between the anode electrode 13 and the cathode electrode 15 by an external power source. As a result, holes are injected from the anode electrode 13 into the organic semiconductor layer 14. Electrons are injected from the cathode electrode 15 into the organic semiconductor layer 14. The injected holes and electrons recombine in the organic semiconductor layer 14 to emit light. Thereafter, the light passes through the anode electrode 13 and the element substrate 1A. Here, the light transmitted through the element substrate 1 </ b> A is scattered by the roughened lower surface of the shielding substrate 6 and the main surface 4 a of the resin substrate 4. Thereafter, the light is emitted from the main surface 4 b of the resin substrate 4.

  Next, a method for manufacturing the organic semiconductor device 11 according to the above-described second embodiment will be described. 3 to 9 are diagrams illustrating each manufacturing process of the organic semiconductor device according to the second embodiment.

  First, as shown in FIG. 3, a softened epoxy-based UV curable resin material is applied to one main surface 4a of the resin substrate 4 having flexibility. Thereafter, the shielding substrate 6 made of a glass substrate is placed on the epoxy UV curable resin material. In this state, ultraviolet rays (UV) are irradiated from the shielding substrate 6 side. As a result, the epoxy UV curable resin is cured to form the fixing layer 5, and the shielding substrate 6 is fixed to the resin substrate 4.

  Next, as shown in FIG. 4, a soft acrylic resin is applied to the other main surface 4 b of the resin substrate 4. Thereafter, the support substrate 2 is placed on the acrylic UV curable resin. In this state, ultraviolet rays (UV) are irradiated from the support substrate 2 side. Thereby, the acrylic UV curable resin is cured to form the adhesive layer 3, and the support substrate 2 is bonded to the resin substrate 4. Thereby, the element substrate 1 is completed.

  Next, an ITO film (not shown) is formed on the entire growth main surface 8 of the element substrate 1. Thereafter, as shown in FIG. 5, a resist film 51 is formed by a photolithography technique. Next, the ITO film exposed from the resist film 51 is etched. Thereby, the patterned anode electrode 13 is formed.

Next, a SiO ₂ film (not shown) is formed on the entire growth main surface 8 and the anode electrode 13 of the element substrate 1. Thereafter, as shown in FIG. 6, a resist film 52 is formed by a photolithography technique while the element substrate 1 is heated. Next, the SiO ₂ film exposed from the resist film 52 is etched. Thereby, a patterned insulating film 17 is formed.

  Next, as shown in FIG. 7, the organic semiconductor layer 14 is deposited on a predetermined region on the anode electrode 13 using a shadow mask 53 having an opening.

  Next, as shown in FIG. 8, the cathode electrode 15 and the anode terminal 16 are vapor-deposited in a predetermined region. Thereafter, the sealing film 18 is formed. Thereby, the organic semiconductor element 12 is completed on the shielding substrate 6 of the element substrate 1.

  Next, as shown in FIG. 9, the support substrate 2 is peeled from the resin substrate 4. Thereby, the support substrate 2 is removed from the element substrate 1A, and the organic semiconductor device 11 is completed. Note that the adhesive layer 3 may remain on the main surface 4 b of the resin substrate 4 of the completed organic semiconductor device 11.

  As described above, in the method for manufacturing the organic semiconductor device 11 according to the second embodiment, the support substrate 2 is bonded so that it can be removed from the resin substrate 4. Thereby, after forming the organic semiconductor element 12, the support substrate 2 can be peeled from the resin substrate 4. FIG. As a result, the flexibility after completion of the organic semiconductor device 11 can be enhanced.

  In the method for manufacturing the organic semiconductor device 11, the element substrate 1 to which the support substrate 2 made of a glass substrate is bonded is used. Thereby, even if the element substrate 1 is heated in a photolithography process or the like, deformation such as warpage can be suppressed. For this reason, the patterning accuracy of the resist films 51 and 52 can be increased. As a result, the accuracy of the shapes of the anode electrode 13 and the insulating film 17 patterned by the resist films 51 and 52 can be improved. Furthermore, in the element substrate 1, since the support substrate 2 is thicker than the resin substrate 4, deformation can be further suppressed.

  Moreover, in the organic semiconductor device 11, since the lower surface of the shielding substrate 6 and the main surface 4a of the resin substrate 4 are roughened, light transmitted through the element substrate 1A is scattered. Thereby, the light reflected by the main surface 4a of the resin substrate 4 of the element substrate 1A is reduced. As a result, the light extraction efficiency can be improved. Further, in the organic semiconductor device 11, by fixing the lower surface of the shielding substrate 6 and the main surface 4 a of the resin substrate 4, the fixing force by the fixing layer 5 can be increased due to the anchor effect.

  In the organic semiconductor device 11, the light transmitted through the element substrate 1 </ b> A can be scattered by making the resin substrate 4 cloudy. Thereby, the light confined inside the resin substrate 4 of the element substrate 1A is reduced. As a result, the extraction efficiency of transmitted light can be improved.

  Further, the curing process of the adhesive layer 3 and the fixing layer 5 when the element substrate 1 is manufactured is usually performed by irradiating ultraviolet rays. Here, as described above, in the organic semiconductor device 11, since the resin substrate 4 is clouded, the irradiated ultraviolet rays can be reflected and enhanced. As a result, the efficiency of the curing process of the adhesive layer 3 and the fixing layer 5 can be improved.

(Third embodiment)
Hereinafter, an organic semiconductor device according to a third embodiment of the present invention will be described with reference to the drawings. FIG. 10 is a cross-sectional view of an organic semiconductor device according to the third embodiment. In addition, the same code | symbol is attached | subjected to the structure same as embodiment mentioned above, and description is abbreviate | omitted.

  As shown in FIG. 10, the organic semiconductor device 21 according to the third embodiment includes an element substrate 1 </ b> A and an organic semiconductor element 22.

  The element substrate 1 </ b> A includes a resin substrate 4, a fixing layer 5, and a shielding substrate 6. In the organic semiconductor device 21, the support substrate 2 is removed from the resin substrate 4 during the manufacturing process (see the dotted line in FIG. 10).

  The organic semiconductor element 22 is an organic transistor element that can be switched on and off. The organic semiconductor element 22 includes a gate electrode 23, a gate insulating film 24, a source electrode 25, a drain electrode 26, an organic semiconductor layer 27, and a sealing film 28.

  The gate electrode 23 is for switching the current between the source electrode 25 and the drain electrode 26 on and off. The gate electrode 23 is for adjusting the amount of current between the source electrode 25 and the drain electrode 26. The gate electrode 23 is made of an Al film having a thickness of about 100 nm. The gate electrode 23 is formed at a substantially central portion of the main growth surface 8 of the element substrate 1A.

The gate insulating film 24 is for insulating the gate electrode 23 from the electrodes 25 and 26. The gate insulating film 24 is made of a SiO ₂ film. The gate insulating film 24 is formed so as to cover the gate electrode 23.

  The source electrode 25 is for injecting holes into the organic semiconductor layer 27. The drain electrode 26 is for injecting electrons into the organic semiconductor layer 27. The source electrode 25 and the drain electrode 26 are made of an Au film having a thickness of about 100 nm. The source electrode 25 and the drain electrode 26 are formed on the growth main surface 8 and the gate insulating film 24 of the element substrate 1A. On the gate insulating film 24, a predetermined interval is formed between the source electrode 25 and the drain electrode 26.

  The organic semiconductor layer 27 is for forming a current path between the source electrode 25 and the drain electrode 26. The organic semiconductor layer 27 is made of a high mobility pentacene film having a thickness of about 50 nm. The organic semiconductor layer 27 is formed on the gate insulating film 24 exposed from the source electrode 25 and the drain electrode 26. A part of the organic semiconductor layer 27 is formed on the upper surfaces of the source electrode 25 and the drain electrode 26.

  The sealing film 28 is for sealing the organic semiconductor layer 27 and protecting it from moisture and the like. The sealing film 28 is made of an insulating synthetic resin. The sealing film 28 is formed so as to cover a region where the organic semiconductor layer 27 is formed.

  Next, the operation of the organic semiconductor device 21 according to the above-described third embodiment will be described.

  First, in the organic semiconductor device 21, a bias voltage is applied between the source electrode 25 and the drain electrode 26. Next, a voltage is applied to the gate electrode 23. Thereby, holes are injected from the source electrode 25 into the organic semiconductor layer 27. The injected holes are transported to the drain electrode 26. As a result, a current flows between the source electrode 25 and the drain electrode 26. When the voltage application to the gate electrode 23 is stopped from this state, the injection of holes from the source electrode 25 to the organic semiconductor layer 27 is stopped, and the current flow is interrupted.

  Next, a method for manufacturing the organic semiconductor device 21 according to the above-described third embodiment will be described. 11-16 is a figure explaining each manufacturing process of the organic-semiconductor device by 3rd Embodiment.

  First, the element substrate 1 is manufactured by the same manufacturing method as in the second embodiment.

  Next, an Al film (not shown) is formed on the entire growth main surface 8 of the element substrate 1. Thereafter, as shown in FIG. 11, a resist film 61 is formed by a photolithography technique while the element substrate 1 is heated. Next, the Al film exposed from the resist film 61 is etched. Thereby, the patterned gate electrode 23 is formed.

Next, a SiO ₂ film (not shown) is formed on the growth main surface 8 and the gate electrode 23 of the element substrate 1. Thereafter, as shown in FIG. 12, a resist film 62 is formed by a photolithography technique while the element substrate 1 is heated. Next, the SiO ₂ film exposed from the resist film 62 is etched. As a result, a patterned gate insulating film 24 is formed.

  Next, an Au film (not shown) is formed on the growth principal surface 8 of the element substrate 1 and the gate insulating film 24. Thereafter, as shown in FIG. 13, a resist film 63 is formed by a photolithography technique while the element substrate 1 is heated. Next, the Au film exposed from the resist film 63 is etched. Thereby, the patterned source electrode 25 and drain electrode 26 are formed.

  Next, as shown in FIG. 14, an organic semiconductor layer 27 is formed in a predetermined region on the gate insulating film 24 and the electrodes 25 and 26 using a shadow mask 64.

  Next, as shown in FIG. 15, a sealing film 28 is formed. Thereby, the organic semiconductor element 22 is completed.

  Next, as shown in FIG. 16, the support substrate 2 is peeled from the resin substrate 4. Thereby, the organic semiconductor device 21 is completed.

  As described above, in the method for manufacturing the organic semiconductor device 21 according to the third embodiment, the support substrate 2 is bonded so as to be removable from the resin substrate 4. Thereby, after forming the organic semiconductor element 22, the support substrate 2 can be peeled from the resin substrate 4. As a result, the flexibility after completion of the organic semiconductor device 21 can be enhanced.

  In the method for manufacturing the organic semiconductor device 21, the element substrate 1 to which the support substrate 2 made of a glass substrate thicker than the resin substrate 4 is bonded is used. Thereby, even if the element substrate 1 is heated in a photolithography process or the like, deformation such as warpage can be suppressed. For this reason, the precision of the patterning of the resist films 61 to 63 can be increased. As a result, it is possible to improve the accuracy of the shapes of the electrodes 23, 25, and 26 and the gate insulating film 24 that are patterned by the resist films 61 to 63. Furthermore, in the element substrate 1, since the support substrate 2 is thicker than the resin substrate 4, deformation can be further suppressed.

(Experiment)
Next, an experiment performed to prove the effect of the embodiment according to the present invention described above will be described. In this experiment, the element substrate was heated to examine the deformation of the resist film formed on the element substrate. Specifically, a resist film having a width of 5 μm was formed on the element substrate, and the width of the resist film was measured at nine locations on each element substrate.

  A sample having the same configuration as that of the first embodiment was used as the first example. That is, a shielding substrate made of a glass substrate having a thickness of 50 μm is fixed to one surface of a resin substrate made of PEN having a thickness of 100 μm, and a supporting substrate made of a glass substrate having a thickness of 500 μm is attached to the other surface of the resin substrate. Glued. A sample having the same configuration as that of the first example was used as the second example except that the thickness of the support substrate was set to 300 μm. A sample having the same configuration as that of the first example was used as the third example except that the thickness of the support substrate was set to 50 μm. In the first example, three pieces were produced. In the second example, two pieces were produced.

  In this experiment, a resist film was formed in each example by a photolithography technique using a mask pattern for forming a resist film having a width of 5 μm. In the step of forming a resist film, the element substrate was heated at 90 ° C. for 90 seconds from the support substrate side, and then heated at 110 ° C. for 1 minute. The width of the resist film after heating was measured at nine locations on each element substrate.

  The results are shown in FIG. The average (μm) in FIG. 17 is the average of the widths of nine resist films measured for each sample. The evaluation value is obtained by multiplying 100 by dividing the standard deviation of the widths of nine resist films measured on each element substrate by the average of the resist film widths. The average evaluation value is the average evaluation value.

  As shown in FIG. 17, in the first example, the average of the widths of the measurement points was 5.0 μm or a value close thereto. Also in the second example, the average width of the measurement points was 4.0 μm. On the other hand, in the third example in which the support substrate is thinner than the resin substrate, the average of the widths of the measurement points was 3.4 μm. From these results, it can be seen that the support substrate is preferably thicker than the resin substrate. In addition, this indicates that the support substrate is preferably thicker than the resin substrate from the evaluation value and the average evaluation value.

  As mentioned above, although this invention was demonstrated in detail using embodiment, this invention is not limited to embodiment described in this specification. The scope of the present invention is determined by the description of the claims and the scope equivalent to the description of the claims. Hereinafter, modified embodiments in which the above-described embodiment is partially modified will be described.

  The materials, numerical values, shapes, and the like in the above-described embodiments are examples and can be changed as appropriate.

  For example, as the shielding substrate, a substrate made of an inorganic insulating material such as SiN other than the glass substrate can be adopted. The thickness of the shielding substrate can be changed as appropriate, but it is preferably smaller than the thickness of the resin substrate in order to maintain flexibility. The shielding substrate preferably does not contain an alkali metal such as Na.

  Moreover, the support substrate can employ a substrate made of an insulating material other than a glass substrate, metal, or the like. The thickness of the support substrate can be appropriately changed, but is preferably larger than the thickness of the resin substrate.

  Moreover, as a material constituting the resin substrate, PET (polyethylene terephthalate), polycarbonate, polyethylene, PES (polyethersulfone), or the like can be employed.

  Further, the roughening of the shielding substrate or the resin substrate may be omitted.

  In the above-described embodiment, the organic EL element and the organic transistor are given as examples of the organic semiconductor element. However, other organic semiconductor elements such as an organic light emitting transistor may be adopted.

It is sectional drawing of the element substrate by 1st Embodiment. It is sectional drawing of the organic-semiconductor device by 2nd Embodiment. It is a figure explaining each manufacturing process of the organic-semiconductor device by 2nd Embodiment. It is a figure explaining each manufacturing process of the organic-semiconductor device by 2nd Embodiment. It is a figure explaining each manufacturing process of the organic-semiconductor device by 2nd Embodiment. It is a figure explaining each manufacturing process of the organic-semiconductor device by 2nd Embodiment. It is a figure explaining each manufacturing process of the organic-semiconductor device by 2nd Embodiment. It is a figure explaining each manufacturing process of the organic-semiconductor device by 2nd Embodiment. It is a figure explaining each manufacturing process of the organic-semiconductor device by 2nd Embodiment. It is sectional drawing of the organic-semiconductor device by 3rd Embodiment. It is a figure explaining each manufacturing process of the organic-semiconductor device by 3rd Embodiment. It is a figure explaining each manufacturing process of the organic-semiconductor device by 3rd Embodiment. It is a figure explaining each manufacturing process of the organic-semiconductor device by 3rd Embodiment. It is a figure explaining each manufacturing process of the organic-semiconductor device by 3rd Embodiment. It is a figure explaining each manufacturing process of the organic-semiconductor device by 3rd Embodiment. It is a figure explaining each manufacturing process of the organic-semiconductor device by 3rd Embodiment. It is a table | surface which shows the experimental result of an Example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 1A Element substrate 2 Support substrate 3 Adhesive layer 4 Resin substrate 4a, 4b Main surface 5 Adhering layer 6 Shielding substrate 8 Growth main surface 11 Organic semiconductor device 12 Organic semiconductor element 13 Anode electrode 14 Organic semiconductor layer 15 Cathode electrode 16 Anode terminal Reference Signs List 17 insulating film 18 sealing film 21 organic semiconductor device 22 organic semiconductor element 23 gate electrode 24 gate insulating film 25 source electrode 26 drain electrode 27 organic semiconductor layer 28 sealing films 51, 52, 61, 62, 63 resist films 53, 64 Shadow mask

Claims (12)

A step of adhering a shielding substrate made of an inorganic insulating material to one main surface of a flexible resin substrate, and adhering a support substrate to the other main surface of the resin substrate to produce an element substrate;
Forming an organic semiconductor element on a shielding substrate of the element substrate;
And a step of removing the support substrate from the element substrate.   The method of manufacturing an organic semiconductor device according to claim 1, wherein a thickness of the support substrate is larger than a thickness of the resin substrate.   The method of manufacturing an organic semiconductor device according to claim 1, wherein a thickness of the resin substrate is larger than a thickness of the shielding substrate.   4. The organic material according to claim 1, wherein a force for fixing the resin substrate and the shielding substrate is larger than a force for bonding the support substrate and the resin substrate. 5. A method for manufacturing a semiconductor device.   5. One of the main surfaces of the resin substrate or the surface of the shielding substrate fixed to the one main surface of the resin substrate is roughened. A method for producing an organic semiconductor device according to claim 1.   The method for manufacturing an organic semiconductor device according to claim 1, wherein the resin substrate is white turbid. A flexible resin substrate;
A shielding substrate fixed to one main surface of the resin substrate;
An element substrate comprising: a support substrate removably bonded to the other main surface of the resin substrate.   The element substrate according to claim 7, wherein a thickness of the support substrate is larger than a thickness of the resin substrate.   The element substrate according to claim 7 or 8, wherein the thickness of the resin substrate is larger than the thickness of the shielding substrate.   10. The element according to claim 7, wherein a force for fixing the resin substrate and the shielding substrate is smaller than a force for bonding the support substrate and the resin substrate. 11. substrate.   The one main surface of the resin substrate or the surface of the shielding substrate fixed to one main surface of the resin substrate is roughened. 2. The element substrate according to item 1.   The element substrate according to claim 7, wherein the resin substrate is white turbid.

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