JP2009120466A - 低温焼成及び高温絶縁抵抗強化用誘電体組成物及びこれを用いた積層セラミックキャパシタ - Google Patents
低温焼成及び高温絶縁抵抗強化用誘電体組成物及びこれを用いた積層セラミックキャパシタ Download PDFInfo
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- 150000001340 alkali metals Chemical group 0.000 claims description 6
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- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 29
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 22
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 11
- 239000000395 magnesium oxide Substances 0.000 description 11
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- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
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- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
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- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
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- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】本発明による誘電体組成物は、主成分としてBaTiO3を含み、副成分として、主成分のモル数を100としたとき、0.5モル乃至2.0モルのMgO、0.3モル乃至2.0モルのRe2O3、0.05モル乃至0.5モルのMnO、0.01モル乃至0.5モルのV2O5、0.3モル乃至2.0モルのBaO、0.1モル乃至2.0モルのSiO2及び0.5モル乃至3.0モルのホウケイ酸塩系ガラスを含み、ReはY、Ho及びDyで構成された群から選択された少なくとも一つであることを特徴とする誘電体組成物が提供される。
【選択図】図1
Description
(数学式1)
101、103 内部電極
102 誘電体層
104、105 外部電極
110 キャパシタ本体
Claims (12)
- 主成分としてBaTiO3を含み、
副成分として、前記主成分のモル数を100としたとき、0.5モル乃至2.0モルのMgO、0.3モル乃至2.0モルのRe2O3、0.05モル乃至0.5モルのMnO、0.01モル乃至0.5モルのV2O5、0.3モル乃至2.0モルのBaO、0.1モル乃至2.0モルのSiO2及び0.5モル乃至3.0モルのホウケイ酸塩系ガラスを含み、
前記ReはY、Ho及びDyで構成された群から選択された少なくとも一つであることを特徴とする低温焼成及び高温絶縁抵抗強化用誘電体組成物。 - 前記ホウケイ酸塩系ガラスは、
R2O、B2O3及びSiO2を含み、前記Rはアルカリ金属であることを特徴とする請求項1に記載の低温焼成及び高温絶縁抵抗強化用誘電体組成物。 - 前記アルカリ金属はLi、Na及びKで構成された群から選択された少なくとも一つであることを特徴とする請求項2に記載の低温焼成及び高温絶縁抵抗強化用誘電体組成物。
- 前記ホウケイ酸塩系ガラスは、
aR2O−bB2O3−cSiO2(Rはアルカリ金属で、式中、a+b+c=100で、5≦a≦20で、5≦b≦30で、50≦c≦80)であることを特徴とする請求項1に記載の低温焼成及び高温絶縁抵抗強化用誘電体組成物。 - 前記BaTiO3の粒子の平均粒径は、
150nm乃至300nmであることを特徴とする請求項1に記載の低温焼成及び高温絶縁抵抗強化用誘電体組成物。 - 前記ホウケイ酸塩系ガラス粒子の平均粒径は、150nm乃至200nmであることを特徴とする請求項1に記載の低温焼成及び高温絶縁抵抗強化用誘電体組成物。
- 前記SiO2の粒子の平均粒径は、10nm乃至200nmであることを特徴とする請求項1に記載の低温焼成及び高温絶縁抵抗強化用誘電体組成物。
- 焼結温度は、1050℃乃至1100℃であることを特徴とする請求項1に記載の低温焼成及び高温絶縁抵抗強化用誘電体組成物。
- 複数の誘電体層、前記誘電体層の間に形成された内部電極及び前記内部電極に電気的に接続された外部電極を含む積層セラミックキャパシタにおいて、
前記誘電体層は、主成分としてBaTiO3を含み、
副成分として、前記主成分のモル数を100としたとき、0.5モル乃至2.0モルのMgO、0.3モル乃至2.0モルのRe2O3、0.05モル乃至0.5モルのMnO、0.01モル乃至0.5モルのV2O5、0.3モル乃至2.0モルのBaO、0.1モル乃至2.0モルのSiO2及び0.5モル乃至3.0モルのホウケイ酸塩系ガラスを含み、
前記ReはY、Ho及びDyで構成された群から選択された少なくとも一つであることを特徴とする低温焼成及び高温絶縁抵抗強化用誘電体組成物を含む積層セラミックキャパシタ。 - 前記内部電極は、NiまたはNi合金を含むことを特徴とする請求項9に記載の積層セラミックキャパシタ。
- 前記外部電極は、CuまたはNiを含むことを特徴とする請求項9に記載の積層セラミックキャパシタ。
- 前記誘電体層の厚さは、0.5μm乃至2μmであることを特徴とする請求項9に記載の積層セラミックキャパシタ。
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