JP2009065113A - Substrate processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus in which a transfer chamber is automatically purged by means of inert gas. <P>SOLUTION: The substrate processing apparatus includes a controller that performs control so that the transfer chamber 102 connected to a processing chamber 202 for processing a substrate is purged by gas, the controller having a switching unit that switches a function of exhausting the gas in the transfer chamber 102 in one direction, and a function of circulating the gas through the transfer chamber 102 in an inert gas atmosphere. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for processing a substrate in a processing chamber, and more particularly to a substrate processing apparatus in which a transfer chamber is connected to a processing chamber.

In the substrate processing apparatus in which the processing chamber and the transfer chamber are connected, in order to prevent natural oxidation of the substrate, the transfer chamber has a sealed structure, and the transfer chamber is replaced with an inert gas, and the oxygen concentration is reduced. A purge gas introduction pipe and an exhaust pipe are provided for keeping the gas below a predetermined value.
The transfer chamber keeps the oxygen concentration below a predetermined value and circulates an inert gas in order to prevent the natural oxide film from adhering to the substrate.

However, when the surface of the substrate is examined after the substrate is processed in the processing chamber, organic substances may adhere to the surface. Such organic matter is generated by heating the wiring in the processing chamber during high-temperature processing, and the organic matter diffuses into the transfer chamber along with the high-temperature atmosphere during wafer unloading. It has been determined that it will adhere. If the film is formed without cleaning the organic matter, the film grows from the part where the contaminants such as organic matter are attached, so that local distortion of the crystal lattice and in-plane thickness non-uniformity occur. There is.
However, it is necessary to change the device configuration and the device parameters in order to change the organic oxide on the substrate to prevent the natural oxide film from adhering to the substrate at the time of unloading. Therefore, since the place where the apparatus is placed is limited, it is possible to switch between a function for preventing the natural oxide film from adhering to the substrate and a function for preventing the organic substance from adhering to the substrate from being switched for each process. It has been demanded.

  Therefore, an object of the present invention is to switch from a device that prevents the natural oxide film from adhering to the substrate in the transfer chamber, and to quickly exhaust the organic matter diffusing in the transfer chamber from the transfer chamber before adhering to the substrate. It is intended to be able to be operated on a device to be operated, and vice versa.

  In order to achieve the above object, the present invention is a substrate processing apparatus comprising control means for controlling a transfer chamber connected to a processing chamber for processing a substrate to be purged with gas, wherein the control means comprises: There is provided a substrate processing apparatus having switching means for switching between a function of exhausting a gas flow in the transfer chamber in one direction and a function of circulating a gas in the transfer chamber in an inert atmosphere. When the inert gas in the transfer chamber is exhausted in one direction before and after the unloading of the wafer and during the unloading, the organic matter diffused in the transfer chamber is quickly exhausted from the transfer chamber. Since the organic matter is exhausted, the adhesion of the organic matter to the substrate surface is prevented.

According to the present invention, at least during the unloading process, even if it is necessary to prevent the adhesion of organic matter rather than the deposition of an oxide film on the substrate in the transfer chamber, the natural oxide film can be adhered to the substrate with the same apparatus. By switching between the function to prevent and the function to prevent the adhesion of organic substances on the substrate, the adhesion of organic substances can be prevented. In addition, even if the device configuration or device parameters are changed, there is no need to change the program, so the same device has a function to prevent the natural oxide film from adhering to the substrate and a function to prevent organic substances from adhering to the substrate. Switching work can now be done efficiently. As a result, it has become possible to efficiently perform the operation of switching the function of preventing the natural oxide film from adhering to the substrate during unloading to the function of preventing the adhesion of organic substances on the substrate according to the film type.

  Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described with reference to FIGS. 1 and 2, and then a substrate processing system and a substrate processing method according to the present invention will be described with reference to FIGS. 3 to 7. explain.

1 is a front view of the substrate processing apparatus, and FIG. 2 is a side view of FIG.
As shown in FIGS. 1 and 2, the substrate processing apparatus 100 according to the present embodiment is a hoop (substrate container; hereinafter referred to as a pod) as a wafer carrier storing a wafer (substrate to be processed) 200 made of silicon or the like. ) 110 is used. Currently, the pod 110 is mainly used as a FOUR type. In this pod 110, the opening provided on one side surface is closed with a lid (not shown) to transport the wafer 200 isolated from the atmosphere, and the lid 200 is removed to move the wafer 200 into and out of the pod 110. You can do that.
A pod loading / unloading port (substrate container loading / unloading port) 112 is opened on the front wall 111a of the casing 111 so as to communicate with the inside and outside of the casing 111. The loading / unloading opening / closing mechanism 113 is opened and closed.
A load port (substrate container delivery table) 114 is installed on the front front side of the pod loading / unloading port 112.
The load port 114 is configured to place and align the pod 110.
The pod 110 is loaded onto the load port 114 by an in-process conveyance device (not shown), and is also unloaded from the load port 114.

A rotary pod shelf (substrate container mounting shelf) 105 is installed at an upper portion of the casing 111 in a substantially central portion in the front-rear direction. The rotary pod shelf 105 stores a plurality of pods 110. It is configured. In other words, the rotary pod shelf 105 is vertically arranged and intermittently rotated in a horizontal plane, and a plurality of shelf boards (supported by a substrate container) that are radially supported by the support 116 at each of the upper, middle, and lower positions. And a plurality of shelf plates 117 are configured to hold the pods 110 in a state where a plurality of pods 110 are respectively placed.
In the casing 111, a pod transfer device (substrate container transfer device) 118 is installed between the load port 114 and the rotary pod shelf 105.
The pod transfer device 118 includes a pod elevator (substrate container lifting mechanism) 118a that can move up and down while holding the pod 110, and a pod transfer mechanism (substrate container transfer mechanism) 118b as a transfer mechanism. The apparatus 118 conveys the pod 110 between the load port 114, the rotary pod shelf 105, and the pod opener (substrate container lid opening / closing mechanism) 121 by continuous operation of the pod elevator 118a and the pod conveying mechanism 118b. Composed.

A sub-housing 119 is constructed across the rear end of the lower portion of the housing 111 at a substantially central portion in the front-rear direction.
A pair of wafer loading / unloading ports (substrate loading / unloading ports) 120 for loading / unloading the wafer 200 into / from the sub-casing 119 are arranged on the front wall 119a of the sub-casing 119 in two vertical stages. A pair of pod openers 121 and 121 are installed at the wafer loading / unloading ports 120 and 120 at the upper and lower stages, respectively.
The pod opener 121 includes mounting bases 122 and 122 on which the pod 110 is placed, and cap attaching / detaching mechanisms (lid attaching / detaching mechanisms) 123 and 123 for attaching and detaching caps (lids) of the pod 110.
The pod opener 121 is configured to open and close the wafer loading / unloading port of the pod 110 by attaching / detaching the cap of the pod 110 placed on the placing table 122 by the cap attaching / detaching mechanism 123.

The sub casing 119 constitutes a transfer chamber 102 that is fluidly isolated from the installation space of the pod transfer device 118 and the rotary pod shelf 105. The transfer chamber (airtight chamber) 102 is used as a transfer area for the wafers 200 and as a loading / unloading space for a boat (substrate holding means) 217 described later.
<Transfer room>
The transfer chamber 102 is a hermetically sealed container corresponding to the reduced pressure of the processing chamber 202 in order to prevent the wafer 200 from being naturally oxidized, and is filled with an inert gas. Various gases can be used as the inert gas, but an inexpensive N2 gas is used in the present embodiment.
A wafer transfer mechanism (substrate transfer mechanism) 125 is installed in the front region of the transfer chamber 102, and the wafer transfer mechanism 125 is a wafer transfer device (rotation or linear movement of the wafer 200 in the horizontal direction). A substrate transfer device) 125a and a wafer transfer device elevator (substrate transfer device lifting mechanism) 125b for moving the wafer transfer device 125a up and down.

As shown in FIG. 1, the wafer transfer apparatus elevator 125 b is installed between the right end portion of the pressure-resistant casing 111 and the right end portion of the front area of the transfer chamber 102 of the sub casing 119.
By continuous operation of the wafer transfer apparatus elevator 125b and the wafer transfer apparatus 125a, the tweezer (substrate holding body) 125c of the wafer transfer apparatus 125a is used as a mounting portion for the wafer 200, and the boat is driven by the tweezer (substrate holding body) 125c. (Substrate holder) 217 is loaded (charged) and unloaded (discharged) with the wafer 200.

In the rear region of the transfer chamber 102, a standby unit 126 that houses and waits for the boat 217 is configured.
A reaction furnace 201 is provided above the standby unit 126, and the lower part of the reaction furnace 201 is configured to be opened and closed by a furnace port shutter (furnace port opening / closing mechanism) 147. The reaction furnace 201 is provided with a processing chamber 202. The partition wall of the processing chamber 202 is made of an electrically insulating dielectric material such as quartz (quartz glass or the like) or ceramic.
The processing chamber 202 is hermetically partitioned by a partition wall made of a dielectric and the seal cap 129, and the heater 13 is provided so as to surround the partition wall of the processing chamber 202.
Note that an exhaust pipe (not shown) communicates with the processing chamber 202, and a vacuum pump (not shown) as a decompression exhaust apparatus is connected downstream of the exhaust pipe. In addition, a gas introduction pipe for introducing a processing gas (film forming material gas, oxidizing gas, etching gas, etc.) is connected to the processing chamber 202.

As shown in FIG. 1, a boat elevator (substrate holder lifting mechanism) 115 for raising and lowering the boat 217 is provided between the right end portion of the casing 111 and the right end portion of the standby section 126 of the sub casing 119. Installed.
The seal cap 129 is horizontally installed on an elevator arm 128 serving as a connecting tool connected to a lifting platform of the boat elevator 115.
The seal cap 129 is configured as a lid that vertically supports the boat 217 and opens and closes the lower portion of the reaction furnace 201. The seal cap 129 is supported by the elevator arm 128 of the boat elevator 115. When the elevator arm 128 is raised by the boat elevator 115 and the seal cap 129 closes the furnace port of the processing chamber 202 of the reaction furnace 201, the insertion of the processing chamber 202 of the boat 217 is completed. When the elevator arm 128 of the boat elevator 115 is lowered, the boat 217 is unloaded from the processing chamber 202.

A suction duct (clean air or inert gas) is supplied to the left end portion of the transfer chamber 102 opposite to the wafer transfer device elevator 125b side and the boat elevator 115 side so as to supply clean air 133 that is purified air or inert gas. A clean unit 134 composed of a supply fan and a filter (not shown) is attached to an intake duct (described later).
A notch alignment device (not shown) is installed between the wafer transfer device 125a and the clean unit 134 as a substrate alignment device for aligning the circumferential position of the wafer 200 (substrate to be processed).

The clean air 133 blown out from the clean unit 134 flows into the notch aligner and wafer transfer device 125a and the boat 217 in the standby unit 126, and is then sucked in from an exhaust duct (described later), As will be described later, it is exhausted to the outside or sucked into a suction port of a circulation line (described later) and blown out again from the clean unit 134 into the transfer chamber 102 and circulated in the transfer chamber 102.
The boat 217 is provided with a plurality of holding members 217c and 217d as will be described later.

  FIG. 3 is an explanatory diagram showing an example for controlling the transfer chamber 102 to be purged with a predetermined gas.

As shown in FIG. 3, in the transfer chamber 102, an intake duct 300 is partitioned on the side opposite to the boat installation side, and an intake pipe 303 is connected to the inlet of the intake duct 300. An exhaust port of the intake duct 300 opens near the bottom of the transfer chamber 102. The intake duct 300 is provided with opening / closing valves AV65 and AV68 on the upstream side and the downstream side, respectively, and a blower outlet 301 is provided between the upstream opening / closing valve AV65 (DV1) and the downstream opening / closing valve AV68. Is formed.
The clean unit 134 is attached to the air outlet 301.

A system for purging the transfer chamber 102 includes an exhaust duct 312 and a purge gas introduction pipe 302a.
The purge gas introduction pipe 302 a passes through the partition wall of the transfer chamber 102 from the side opposite to the clean unit 134 side, is inserted into the intake duct 300, and is connected to a connection portion on the back side of the clean unit 134.
The gas discharge port of the purge gas introduction pipe 302 a is opened near the furnace port of the processing chamber 202.
Each purge gas introduction pipe 302a is provided with a mass flow controller N2MFC # 1 whose flow rate is feedback controlled by a mass flow meter.
The introduction port of the exhaust duct 312 is installed on the opposite side of the boat 217 and the wafer transfer device 125a, and opens near the bottom surface of the transfer chamber 102.
An exhaust port of the exhaust duct 312 is connected to a gas exhaust pipe 313 for exhausting the processing chamber atmosphere or the processed gas from the processing chamber 202.
The purge gas introduction pipe 302a and the exhaust duct 312 are provided with on / off valves AV56 (LA1) and AV66 (DV2) for opening and closing, respectively. The exhaust duct 312 is provided with an oxygen concentration meter OV1.

  If the inlet of the exhaust duct 312 is open near the bottom surface of the transfer chamber 102, the transfer chamber 102 can be exhausted without stagnation. Similarly, if the inlet of the intake duct 300 opens near the ceiling of the transfer chamber 102 and the exhaust outlet of the intake duct 300 opens near the bottom of the transfer chamber 102, the transfer chamber 102 is swallowed. It is possible to circulate without.

Further, when the opening / closing valves AV56, AV65, AV66, and AV68 are combined, the transfer chamber 102 can be switched to the atmosphere or an inert gas atmosphere, and the inert gas is circulated in the transfer chamber 102. Can do. Reference numeral 305 denotes a radiator for adjusting the temperature of the transfer chamber.

<Air introduction>
In the case of introducing air, the on-off valve AV66 (DV2) of the exhaust duct 312 is closed, the on-off valve AV65 (DV1) of the intake duct 300, the on-off valve AV68 of the intake duct 300 is opened, and the on-off valve AV56 (LA1) of the purge gas introduction pipe 302a. ) Is closed.
In this way, the atmosphere in the clean room is introduced and the transfer chamber 102 becomes atmospheric pressure, so that the wafer 200 can be transferred between the pod 110 and the wafer transfer device 125a.

<Purge>
In the case of purging, the on-off valve AV65 (DV1) of the intake duct 300 is closed, the on-off valve AV56 (LA1) of the purge gas introduction pipe 302a is opened, and the on-off valve AV66 (DV2) of the exhaust duct 312 is opened.
In this way, the inert gas is introduced into the transfer chamber 102 from an inert gas supply source, for example, an inert gas supply cylinder, and the atmosphere in the transfer chamber 102 is discharged from the exhaust duct 312. The inside of the chamber 102 is replaced with an inert gas atmosphere, for example, nitrogen gas.
When the transfer chamber is replaced with an inert gas, the oxygen concentration is reduced, so that natural oxidation of the wafer 200 in the transfer chamber 102 is prevented.

<Circulation of atmosphere in the transfer room>
When circulating the inert gas, the on-off valve AV56 (LA1) of the purge gas introduction pipe 302a is opened, the on-off valve AV68 of the intake duct 300 is opened, the on-off valve AV65 (DV1) of the intake duct 300 is closed, and the clean unit 134 is opened. Drive the supply fan. Further, the on-off valve AV66 (DV2) of the exhaust duct 312 is closed.
Since the transfer chamber is cleaned by the filter of the clean unit 134 while circulating in the transfer chamber 102, contamination of the wafer 200 by dust is suppressed.

  FIG. 4 is a block diagram showing an example of an apparatus controller 321 as a control means for executing substrate processing.

The device controller 321 is configured by a known computer having a CPU, a memory, a hard disk, an I / O (all not shown) and the like as main parts.
In the present embodiment, the device controller 321 is distributed with the operation unit 321a and the control unit 321b, and is connected to each other via a LAN. However, the operation unit and the control unit may be configured as a single unit.
In addition to the monitor 324 (display unit), a necessary user interface is connected to the operation unit 321a.
The output unit of the control unit 321b includes a mass flow controller N2MFC # 1 attached to the inert gas introduction pipe, an opening / closing valve AV68 of the intake duct 300, an opening / closing valve AV56 (LA1) of the purge gas introduction pipe 302a, and an opening / closing of the exhaust duct 312. In addition to the valve AV66 (DV2) and the on-off valve AV65 (DV1) of the intake duct 300, a substrate transfer system, an actuator of the substrate transfer system, a sub controller for operating various mechanisms, and the like are connected with reference to the set values.

In addition, a mass flow meter of a mass flow controller N2MFC # 1, which will be described later, an oxygen concentration sensor OV1 for detecting the oxygen concentration in the transfer chamber 102, and the like are connected to the input unit of the control unit 321b.
In the present embodiment, each on-off valve AV56 (LA1), AV65 (DV1), AV66 (D
V2), the AV 68 is directly controlled by the device controller 321, but may be controlled by a valve controller (not shown) which is a kind of sub-controller.

  The operation unit 321a or the control unit 321b is equipped with, for example, a hard disk 306 as a fixed storage device. The hard disk 306 includes a configuration file, a process recipe for each film type, a recipe for purging the transfer chamber 102 (hereinafter collectively referred to as a recipe), various control tables, various parameter operation screens, and a setting screen. Necessary data such as screen files are stored.

  When the apparatus controller 321 is activated and the recipe is executed, the setting for each step constituting the recipe is referred to by the sub-controller of the substrate transfer system and the substrate processing system, and the front shutter 113 and the pod transfer device 118 are controlled by the sub-controller of the substrate transfer system. The rotary pod shelf, the pod opener 121, the cap attaching / detaching mechanism 123, the wafer transfer device 125a, the tweezer 125c, and the notch aligning device are controlled, and the furnace port shutter 147, the boat elevator 115, the heater, A vacuum pump and a processing gas supply system are controlled.

FIG. 6 shows an operation screen for creating a recipe in the apparatus controller 321.
This operation screen is an example of a recipe for purging the transfer chamber 102 (hereinafter referred to as a purge recipe), and the present invention is not limited by the layout of the screen, the items, and the types of buttons. The process recipe and the purge recipe are executed individually.
As shown in FIG. 6, a valve arrangement diagram 512 is displayed in the lower left column of the screen, setting items are displayed in the right column of the screen, and file information is displayed in the upper column of the screen. Since the configuration of the valve arrangement diagram 512 matches the configuration described in FIG. 3, the description thereof is omitted here.

  In the upper column of the valve layout diagram 512, for example, two program buttons of a “NAME” button 513 and a “No.” button 514 are displayed.

  When the “NAME” button 513 is pressed, the display of the symbol displayed in the valve layout diagram 512 is switched to the display of the component name. When the “No.” button 514 is pressed, the display of the component name is reversed. To display the sign. For this reason, the device operator can grasp on the operation screen which part is arranged in the pipe by simply selecting and pressing the “NAME” button 513 and the “No.” button 514. Each of these buttons is associated with a program executed by the control unit 321b. When the button is pressed by an input device such as a finger or a touch pen, the corresponding program is operated.

  As the file information, for example, a “file” name input cell 515 and a “step No.” display cell 516 for displaying “step No.” of the recipe are displayed.

  In this case, the “file” name input cell 515 is a cell for inputting the table name of this screen, and the “step No.” display cell 516 is for inputting a step number corresponding to the number of steps of the recipe. Cell. For input, a character / number / symbol table (not shown) for operating the character input system displayed on the same screen is used, but a keyboard connected to the operation unit 321a may be used.

  When the “valve setting” button 517 is pressed, a valve setting screen shown in FIG. 7 is displayed.

As shown in FIG. 7, a plurality of buttons are displayed on the valve setting screen.
A character / symbol display is displayed above the button. Characters / symbols in the character / symbol display correspond to the symbols of the on-off valves described in FIG.
The characters OPEN and CLOSE on the button represent opening and closing of the valve, respectively.
When these buttons are pressed, the characters OPEN and CLOSE are switched from solid line display to broken line display, and when pressed again, the broken line display is switched to solid line display.

  “66: DV2” on the screen corresponds to the on-off valve AV66, “65: DV1” corresponds to AV65, and “56: LA1” corresponds to AV56.

Therefore, when the button immediately below the display of “66: DV2” is pressed, the CLOSE character on the button changes from a broken line to a solid line, and the on / off valve of “66: DV2”, that is, the on / off valve AV66 is closed. Set to
When the button under the same “66: DV2” display is pressed again, the CLOSE character on the button is switched from the solid line display to the broken line display, and the opening / closing corresponding to the display of “66: DV2” is performed. The valve AV66 (DV2) is set to open. In this case, a display form in which characters are switched from OPEN to CLOSE or vice versa in the same solid line display may be used.

When the opening / closing settings for the on-off valves AV56 (LA1), AV65 (DV1), AV66 (DV2), and AV68 are completed, the “SET” button 518 at the bottom of this screen is pressed to confirm the settings.
To cancel the setting, a “CANCEL” button 519 displayed on the screen is pressed.
When the “SET” button 518 is pressed, the setting is reflected in the recipe. When the recipe is executed, the opening / closing valves AV56 (LA1), AV65 (DV1), AV66 (DV2), and AV68 are opened and closed with this setting. In the present embodiment, the setting for circulating the inside of the transfer chamber 102 with the inert gas is performed.
When the “SET” button 518 is pressed and a “return” button (not shown) on the screen is pressed, the screen returns to the original operation screen.

FIG. 5 is a table for displaying on the operation screen a setting screen for setting the opening / closing of the on-off valve AV65 (DV1), on-off valve AV66 (DV2), on-off valve AV56 (LA1), and valid / invalid of the detected value of the oxygen concentration sensor. An example is shown.
Specifically, this is a screen for performing switching setting between the N ₂ purge mode of FIG. 3A and the one-pass mode of FIG. As described above, the setting may be performed using the valve setting screen shown in FIG. 5A and 5B may be stored in the hard disk 306 as a setting table.

As shown in FIG. 5, the setting is classified by unloading and loading.
Here, loading and unloading mean loading and unloading of the boat 217 holding the wafers 200.

When 1PASS S / W (switch) is ON as shown in FIG. 5A, the on-off valve AV65 (DV1) of the intake duct 300 is opened, the on-off valve AV56 (LA1) of the purge gas introduction pipe 302a is opened, and the exhaust duct 312 is opened. Open / close valve AV66 (DV2) is set to open.
Therefore, at the time of unloading, all of the organic substances are exhausted before adhering to the wafer 200 by the inert gas introduced into the transfer chamber 102 from the purge gas introduction pipe 302a, for example, nitrogen gas and the atmosphere from the intake pipe 303. Therefore, the adhesion of organic matter to the surface of the wafer 200 is prevented.
In this case, the oxygen concentration in the transfer chamber 102 rises from the monitored value of the oxygen concentration due to the introduction of the atmosphere, and a predetermined time elapses. However, as shown in FIG. 5, monitoring by the oxygen concentration sensor OV1 is invalid. Therefore, such a problem does not occur.

In addition, when operated with the 1PASS S / W function, adhesion of organic substances to the wafer 200 is prevented, and local distortion of the bonding lattice of the film formation in the subsequent film formation process and unevenness of the in-plane film thickness are prevented. Therefore, it is not necessary to clean the wafer 200.
After the substrate processing (for example, oxidation processing), the wafer 200 is subjected to film forming processing by another processing apparatus, and, for example, Si ₃ N ₄ is formed on the surface to be processed.
Here, if the processing temperature at which organic matter is generated from the wiring of the processing chamber 202 is added to the condition that 1PASS S / W is turned on, the 1PASS S / W is turned off at a processing temperature lower than that, so the inert gas Consumption can be reduced.
When 1PASS S / W (switch) is ON, the flow rate of the inert gas supplied from the purge gas introduction pipe 302a is preferably set to 800 SLM or more.

On the other hand, when 1PASS S / W (switch) is OFF, the on-off valve AV65 (DV1) of the intake pipe 303 is closed, the on-off valve AV56 (LA1) of the purge gas introduction pipe 302a is opened, and the on-off valve AV66 of the exhaust duct 312 ( DV2) is set to closed. The detected value of the oxygen concentration sensor OV1 is valid.
For this reason, during loading, the transfer chamber atmosphere is purged by introducing an inert gas based on the detected value of the oxygen concentration sensor OV1 and the monitored value of the oxygen concentration of the transfer chamber 102, and the exhaust duct. The transfer chamber atmosphere is appropriately discharged from the bypass line 312.
In addition, since no organic matter is generated in the transfer chamber 102 during loading, the oxygen concentration in the transfer chamber 102 is monitored by an appropriate flow rate of inert gas, for example, 20 ppm or less. Retained.
In this case, the flow rate of the inert gas is determined within a range of 400 to less than 800 SLM.
When the oxygen concentration in the transfer chamber 102 matches the monitored value, the opening / closing valve AV65 (DV1) of the intake pipe 303 is closed, the opening / closing valve AV68 of the intake duct 300 is opened, and the transfer is performed by the supply fan of the clean unit 134. Indoor circulation shall be performed.

As described above, when the opening / closing valves AV65 (DV1), AV66 (DV2), AV56 (LA1), and the opening / closing valve AV68 are set to open and close and the purge recipe is executed, all organic substances generated during substrate processing are exhausted. Therefore, as in the prior art, organic substances are prevented from adhering to the surface of the wafer 200, and the occurrence of crystal lattice distortion and in-plane film thickness non-uniformity during the subsequent film formation process is prevented. In addition, since the organic substance adhering to the wafer 200 can be omitted, productivity is improved.
Further, by providing means for setting the on-off valve as shown in FIG. 5, the apparatus can be made versatile. Further, a button for turning ON / OFF 1PASS S / W may be provided on the operation screen and pressed during execution of the process recipe to switch to the 1PASS S / W function. As a result, since it can be switched to the 1PASS S / W function only at the time of unloading, the operation can be efficiently performed according to the film type. Needless to say, the 1PASS S / W function can be canceled.

  Next, an example of a method for manufacturing a semiconductor device according to an embodiment of the present invention will be described.

In the method for manufacturing a semiconductor device according to the embodiment of the present invention, a step of loading (charging) a substrate into the boat 217 as a substrate holder or supporting the substrate on a substrate support in the processing chamber 202, In a state where the predetermined temperature and pressure are maintained constant, a process of supplying a predetermined process gas and processing the wafer 200 and a process of unloading the processed wafer 200 from the process chamber 202 are performed in this order. . In the process of unloading the processed wafer 200, that is, the process of unloading the wafer 200 or the boat 217, the atmosphere of the transfer chamber 102, that is, clean air 133 containing an inert gas is exhausted in one direction. (1 PASS), preventing organic substances from adhering to the wafer 200.
Thereafter, substrate processing (for example, film formation processing) is performed in another processing apparatus.
When such a method is carried out, all organic substances generated during unloading are exhausted, and adhesion of organic substances to the wafer 200 is prevented. Therefore, when the film formation is performed after the substrate processing, local distortion of the crystal lattice of the film formation and the in-plane film thickness are prevented from being uneven.

  In the present embodiment, the opening / closing of the on / off valves AV65 (DV1), AV66 (DV2), and AV56 (LA1) is set based on ON / OFF of 1PASS S / W (switch). Based on the above, a 1 PASS S / W (switch) ON purge recipe to be referred to during unloading and a 1 PASS S / W (switch) OFF purge recipe to be referred to during loading are created to load and unload process recipes. Each of these recipes is executed at the time of loading, and the opening / closing of each on-off valve AV65 (DV1), AV66 (DV2), AV56 (LA1) is controlled as described above. You may make it prevent adhesion. The created purge recipe may be incorporated into the process recipe.

  Similarly, a 1 PASS S / W (switch) ON / OFF button is provided on the operation screen, and the 1 PASS S / W (switch) ON purge recipe is referenced by the button operation on the operation screen. 1 PASS S / W (switch) OFF purge recipe can be selected. When unloading, 1 PASS S / W (switch) is turned ON. When loading, 1PASS S / W (switch) is turned OFF. The operation may prevent the wafer 200 from being contaminated by organic substances.

  Next, the operation of the processing apparatus according to the present embodiment will be described with reference to FIGS. 1 and 2.

When the pod 110 is supplied to the load port 114 by the in-process transfer carriage including AGV and OHT, the pod loading / unloading port 112 is opened by the front shutter 113, and the pod 110 above the load port 114 is connected to the pod transfer device 118. Is carried into the housing 111 from the pod loading / unloading port 112.
The loaded pod 110 is automatically transported and delivered by the pod transport device 118 to the designated shelf 117 of the rotary pod shelf 105, temporarily stored, and then one pod opener from the shelf 117. It is conveyed to 121 and transferred to the mounting table 122, or directly transferred to the pod opener 121 and transferred to the mounting table 122.
At this time, the wafer loading / unloading port of the pod 110 is closed by the cap attaching / detaching mechanism 123, and the transfer chamber 102 is filled with the inert gas 133 as clean air by the execution of a recipe described later. . For example, the transfer chamber 102 is filled with nitrogen gas as clean air 133, so that the oxygen concentration is set to 20 ppm or less, which is much lower than the oxygen concentration inside the casing 111 (atmosphere).

The pod 110 mounted on the mounting table 122 has its opening-side end face pressed against the opening edge of the wafer loading / unloading port 120 on the front wall 119a of the sub-housing 119, and the cap is removed by the cap attaching / detaching mechanism 123. The pod 110 wafer loading / unloading port is opened.
When the pod 110 is opened by the pod opener 121, the wafer 200 is picked up from the pod 110 by the tweezer 125c of the wafer transfer device 125a through the wafer loading / unloading port, aligned with the wafer 200 by the notch alignment device, and then transferred to the transfer chamber 102. Is loaded into the standby unit 126 at the rear of the vehicle and loaded (charged) into the boat 217. After the wafer transfer device 125 a delivers the wafer 200 to the boat 217, the wafer transfer device 125 a returns to the pod 110 and the next wafer 200 is loaded into the boat 217.

  During the loading operation of the wafer 200 to the boat 217 by the wafer transfer mechanism 125 in one (upper or lower) pod opener 121, another pod from the rotary pod shelf 105 is loaded into the other (lower or upper) pod opener 121. 110 is transferred and transferred by the pod transfer device 118, and the opening operation of the pod 110 by the pod opener 121 is simultaneously performed.

  When a predetermined number of wafers 200 are loaded into the boat 217, the furnace port of the reaction furnace 201 that has been closed by the furnace port shutter 147 is opened by the opening operation of the furnace port shutter 147. Subsequently, the boat 217 holding the wafers 200 is loaded into the processing chamber 202 when the seal cap 129 is lifted by the boat elevator 115.

After loading, the temperature and pressure suitable for substrate processing are maintained by heating the heater according to the set value of the recipe and exhausting the atmosphere in the processing chamber of a vacuum pump (not shown) as a vacuum exhaust device. Thereafter, a processing gas is supplied to the processing chamber 202.
When the processing gas is an oxidizing gas, an oxide film is formed on the surface to be processed of the wafer 200 by reaction with the surface of the wafer 200. When the processing gas is a film forming gas, a film is formed on the processing surface of the wafer 200 by a thermal CVD reaction.
When the process is finished, the boat 217 is unloaded as the boat elevator 115 descends.
At this time, 1PASS S / W (switch) is turned ON by the recipe, the on-off valve AV65 (DV1) of the intake pipe 303, the on-off valve AV56 (LA1) of the purge gas introduction pipe 302a is opened, and the on-off valve AV66 ( DV2) is opened, and all of the organic matter is exhausted by the inert gas (for example, nitrogen gas) introduced into the transfer chamber 102 from the purge gas introduction pipe 302a and the atmosphere from the intake pipe 303 before adhering to the wafer 200. The Thereby, adhesion of organic substances to the surface of the wafer 200 is prevented.
After the processing, the wafer 200 and the pod 110 are discharged to the outside of the casing 111 in the reverse order of the above-described procedure except for the alignment process of the wafer 200 by the notch aligning device 135.
Another embodiment of the present invention will be described. Even in the case where the transfer chamber in the present invention is a standby chamber that does not have airtightness, the organic contamination of the substrate can be reduced by using the 1 Pass function in the same manner. FIG. 8 shows an example of the setting screen at that time. In this case, in the standby chamber according to the present embodiment, N ₂ purge is not required even if oxygen is present (even if a natural oxide film is attached), so that the 1 Pass function can be performed not only during unloading but also during loading. it can.

Hereinafter, preferred embodiments according to the present invention will be additionally described.
<Embodiment 1>
In a substrate processing apparatus provided with a control means for controlling a transfer chamber connected to a processing chamber for processing a substrate to be purged with an inert gas, the control means circulates the inert gas in the transfer chamber. And a substrate processing apparatus having a function of exhausting the inert gas in the transfer chamber in one direction.
<Embodiment 2>
A substrate processing apparatus having a plurality of recipes for purging the transfer chamber, wherein each function is executed by selecting the recipe.
<Embodiment 3>
A substrate processing apparatus capable of switching between a function of exhausting the inert gas in one direction and a function of circulating the inert gas by an operation screen.
<Embodiment 4>
A substrate processing apparatus, wherein a switching unit on an operation screen is pressed during execution of a recipe for purging the transfer chamber with an inert gas.
<Embodiment 5>
Loading the substrate into the substrate holder, inserting the substrate holder into the furnace, processing the substrate in the furnace, and unloading the processed substrate from the furnace. And in the step of unloading the substrate from the furnace, the inert gas in the transfer chamber is exhausted in one direction, and in the step of inserting the substrate holder into the furnace, the inert gas in the transfer chamber A substrate processing device that circulates.
<Embodiment 6>
A method for manufacturing a semiconductor device, comprising: a step of inserting a substrate into a furnace and supporting the substrate on a substrate holder; a step of processing the substrate in the furnace; and a step of unloading the processed substrate from the furnace. In the step of unloading the substrate from the furnace, the inert gas in the transfer chamber is exhausted in one direction, and in the step of inserting the substrate holder into the furnace, the inert gas in the transfer chamber is removed. A method for manufacturing a semiconductor device to be circulated.

  In the description of the present embodiment, the present invention is applied to a vertical processing apparatus. However, the present invention can also be applied to a horizontal processing apparatus, and can also be applied to a single wafer apparatus.

  Furthermore, the processing apparatus according to the present invention can be applied to the processing of substrates such as CVD, oxidation, and annealing, and the substrate to be processed targets various substrates such as crystal, liquid crystal, and semiconductor.

  In addition, an inert gas introduction pipe different from the exhaust duct 312 is connected to each pod 110, and an open / close valve is provided to replace the atmosphere in each pod 110 with an inert gas. Natural oxidation of the inner substrate may be prevented.

  Furthermore, two or more systems of purge systems including on-off valves, mass flow controllers, and purge gas introduction pipes may be provided as necessary in order to secure a flow rate and improve responsiveness.

  As described above, the present invention can be modified in various ways, and the present invention naturally extends to the modified invention.

It is a front view of the substrate processing apparatus concerning one embodiment of the present invention. It is a side view of FIG. It is explanatory drawing which shows the structure of the purge system and circulation system of the transfer chamber which concerns on one embodiment of this invention. It is a block diagram which shows an example of the apparatus controller which concerns on one embodiment of this invention. It is a figure which shows an example of the opening / closing setting of the on-off valve at the time of loading of a boat or a wafer, and unloading concerning one embodiment of this invention. It is a figure which shows an example of the operation screen of the apparatus controller which concerns on one embodiment of this invention. FIG. 6 is a diagram illustrating an example of a valve setting dialog screen according to the embodiment of the present invention. It is a figure which shows an example of the opening / closing setting of the on-off valve at the time of loading of a boat or a wafer, and unloading concerning one embodiment of this invention.

Explanation of symbols

102 Transfer chamber 134 Clean unit 200 Wafer (substrate)
202 Processing chamber 217 Boat 300 Duct 302a Purge gas introduction pipe 303 Intake pipe 321 Device controller (control means)
400 Circulation line AV56 On-off valve AV65 On-off valve AV66 On-off valve AV68 On-off valve

Claims (7)

A substrate processing apparatus comprising control means for controlling a transfer chamber connected to a processing chamber for processing a substrate to be purged with gas,
The substrate processing apparatus, wherein the control means includes switching means for switching between a function of exhausting a gas flow in the transfer chamber in one direction and a function of circulating a gas in the transfer chamber in an inert atmosphere.   The substrate processing apparatus according to claim 1, wherein the switching unit has a function of exhausting the gas in the transfer chamber in one direction during unloading and a function of circulating the gas in an inert gas atmosphere in the transfer chamber. A substrate processing apparatus configured to select an image on an operation screen.   3. The substrate processing apparatus according to claim 2, wherein the switching unit is set on the operation screen during execution of a recipe for purging the transfer chamber with an inert gas or a process recipe for processing a substrate. The substrate processing apparatus comprised.   3. The substrate processing apparatus according to claim 2, wherein the switching unit relates to a function of exhausting a gas flow in the transfer chamber in one direction and a function of circulating gas in the transfer chamber in an inert gas atmosphere. A substrate processing apparatus for setting a valve to be operated.   2. The substrate processing apparatus according to claim 1, wherein the switching unit has a function of exhausting the gas in the transfer chamber in one direction during unloading, and gas in an inert gas atmosphere in the transfer chamber. A substrate processing apparatus configured to select, on the operation screen, the recipe having a function of circulating the liquid.   6. The substrate processing apparatus according to claim 5, wherein the recipe having a function of exhausting a gas in the transfer chamber in one direction or a function of circulating a gas in an inert gas atmosphere in the transfer chamber. Is a substrate processing apparatus executed in parallel with the process recipe.   6. The substrate processing apparatus according to claim 5, wherein the recipe having a function of exhausting a gas in the transfer chamber in one direction or a function of circulating a gas in an inert gas atmosphere in the transfer chamber. Is a substrate processing apparatus incorporated in the process recipe.