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JP2008204995A - Method of polishing semiconductor wafer - Google Patents

Method of polishing semiconductor wafer Download PDF

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Publication number
JP2008204995A
JP2008204995A JP2007036128A JP2007036128A JP2008204995A JP 2008204995 A JP2008204995 A JP 2008204995A JP 2007036128 A JP2007036128 A JP 2007036128A JP 2007036128 A JP2007036128 A JP 2007036128A JP 2008204995 A JP2008204995 A JP 2008204995A
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Japan
Prior art keywords
semiconductor wafer
chuck
plate
partition member
polishing
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JP2007036128A
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Japanese (ja)
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Keiichi Matsumoto
敬一 松本
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Lapmaster SFT Corp
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Lapmaster SFT Corp
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Priority to JP2007036128A priority Critical patent/JP2008204995A/en
Priority to KR1020070049475A priority patent/KR20080076669A/en
Publication of JP2008204995A publication Critical patent/JP2008204995A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of polishing a semiconductor wafer which can prevent clogging due to vacuum occurring in a chuck plate on the outer periphery of a semiconductor wafer when a small size semiconductor wafer is processed in a universal chuck having a partition member. <P>SOLUTION: A chuck plate 1 is formed of a permeable member to have an inside circular plate 1a and an outside annular plate 1b and an unpermeable partition member 3 is fitted between them while making the upper surface flat. A chuck holder 2 is formed of an unpermeable member and by using a universal chuck having an inside fluid conduction portion 4 and an outside fluid conduction portion 5 for connection with the partition member 3, vacuum chucking is performed over the inside and the outside of the partition member 3 of the chuck plate 1 to bring about a negative pressure in both the inside fluid conduction portion 4 and the outside fluid conduction portion 5 during polishing operation, or vacuum chucking is performed only to the inside of the partition member 3 to bring about a negative pressure in the inside fluid conduction portion 4 and to pressurize the outside fluid conduction portion 5 during polishing operation. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、研磨装置における半導体ウエハの研磨方法に関するものであって、更に、詳細には、半導体ウエハをバキューム吸着させる通気性のチャックプレートに不通気性の仕切部材を形成したユニバーサルチャックを用いた半導体ウエハの研磨方法に関するものである。   The present invention relates to a method for polishing a semiconductor wafer in a polishing apparatus. More specifically, the present invention uses a universal chuck in which an air-permeable partition member is formed on an air-permeable chuck plate for vacuum-adsorbing a semiconductor wafer. The present invention relates to a method for polishing a semiconductor wafer.

昨今要求されている半導体ウエハは、歩留まりの観点からの超高精度の平坦精度及び鏡面精度、並びに、小型化の観点からの極薄化、生産性の観点からの拡径化される傾向にあり、更には、多数のＭＥＭＳデバイス又はＮＥＭＳデバイスに製造する過程の半導体ウエハは、ミクロン単位の研磨加工が必要となり、従来方法の研磨加工では徐々に対処できなく成っており、チャック機構にバキュームさせての研磨加工もより高度な改良を求められている実情である。   Semiconductor wafers that have been demanded these days tend to be ultra-high flatness and mirror surface accuracy from the viewpoint of yield, ultrathinness from the viewpoint of miniaturization, and diameter expansion from the viewpoint of productivity. In addition, semiconductor wafers in the process of manufacturing a large number of MEMS devices or NEMS devices require polishing processing on the order of microns, and the conventional polishing method cannot gradually cope with it, and the chuck mechanism is vacuumed. There is also a need for more advanced improvements in the polishing process.

従来、この種の半導体ウエハの研磨方法は通気性のチャックプレートを回転軸に取着された不通気性のチャックホルダーに嵌着させているものであり、チャックプレートの上面に半導体ウエハをバキューム吸着して研磨加工を施すものであるが、加工する半導体ウエハのサイズが変更されたときに、チャック機構そのものを取り替えると手間暇がかかる作業と成ることから、大きいサイズのチャックプレートをそのまま用いる所謂ユニバーサルチャックにする傾向にある。   Conventionally, this type of semiconductor wafer polishing method is such that an air-permeable chuck plate is fitted to an air-impermeable chuck holder attached to a rotating shaft, and the semiconductor wafer is vacuum-adsorbed on the upper surface of the chuck plate. However, when the size of the semiconductor wafer to be processed is changed, replacing the chuck mechanism itself is time-consuming work, so a so-called universal that uses a large chuck plate as it is. It tends to be a chuck.

その為、大きいサイズの半導体ウエハを研磨加工する場合はチャックプレートの全面でバキューム吸着して、小さいサイズの半導体ウエハを加工する場合、中心位置は変えることなく大きいサイズの半導体ウエハを加工するチャックプレートの中程に小さいサイズの半導体ウエハをバキューム吸着して加工していた。   Therefore, when polishing a large size semiconductor wafer, vacuum chucking is performed on the entire surface of the chuck plate, and when processing a small size semiconductor wafer, the chuck plate for processing a large size semiconductor wafer without changing the center position. A semiconductor wafer of a small size was processed by vacuum suction.

然し乍ら、大きいサイズのチャックプレートに小さいサイズの半導体ウエハをバキューム吸着させると、半導体ウエハの外周とチャックプレートの外周との間に通気性部分が露出されバキューム吸着が図れなくなることから、小さいサイズの半導体ウエハの外周辺にリング状に不通気性部材の仕切り部材を配設して、バキューム吸着の流体系を切り換えて半導体ウエハのサイズに対応しているが、小さいサイズの半導体ウエハを研磨加工する時に、半導体ウエハの外周辺からエアが吸引され、研磨加工後にエアと共に吸引される研磨屑等の不純物が付着して大きいサイズの半導体ウエハの研磨加工の際の超高精度の平坦精度及び鏡面精度の障害と成っていた。   However, if a small-sized semiconductor wafer is vacuum-adsorbed on a large-size chuck plate, the air-permeable part is exposed between the outer periphery of the semiconductor wafer and the outer periphery of the chuck plate, making it impossible to achieve vacuum adsorption. A partition member of an air-impermeable member is arranged in a ring shape around the outer periphery of the wafer, and the vacuum adsorption fluid system is switched to correspond to the size of the semiconductor wafer, but when polishing a small semiconductor wafer Air is sucked from the outer periphery of the semiconductor wafer, and impurities such as polishing dust sucked together with the air after the polishing process are attached, and the ultra-high precision flatness and mirror surface precision when polishing a large size semiconductor wafer. It was an obstacle.

例えば、先に開示されている、チャック本体と、凹陥部と、通気通水機構と、複数の環状仕切と、通気通水機構と複数の環状仕切によって仕切られた環状隔溝とを連通させる切替バルブと、凹陥部へ嵌着する円板状乗載台と、円板状乗載台の外方へ嵌着する複数の環状乗載台とから成るチャックにおいて、円板状乗載台と隣接する環状乗載台との間の環状空隙部及び環状乗載台と隣接する環状乗載台との間の環状空隙部へ空隙部用不通気部材としてペースト状焼結剤と混和させたガラス繊維を塗布焼結した構成であり、更に、空隙部用不通気部材として充填剤を充填した構成であり、加えて、空隙部用不通気部材として粘着テープを貼着したもの（特許文献１参照）や、半導体ウエハの半導体ウエハの研磨方法テーブルの吸引領域を構成する各通気板を、接着剤を主成分とする環状仕切膜を介在させて区画したもの（特許文献２参照）や、通気性ポ−ラスセラミック製円板を中心とし、この円板の外周に軸心を同一、かつ、高さを同一にした複数の通気性ポ−ラスセラミック製環状体が配列され、前記通気性ポ−ラスセラミック製円板と通気性ポ−ラスセラミック製環状体の間および通気性ポ−ラスセラミック製環状体同士の間には、幅が０．１〜０．８ｍｍ、高さが前記円板と同一の溶射セラミックの非通気性薄膜環状仕切壁が配列されて全体として１枚の円盤を構成する、半導体ウエハの研磨方法用ウエハ取付板を提供するもの（特許文献３参照）や、複数の環状溝４ａ〜４ｄの底部に各々球状弁５ｚの弁座５ｓを備える中空状の連通管５ｈを各々起立させ、かつ、この連通管内部には上方の圧縮スプリング５ｊと下方の圧縮スプリング５ｉとで挟持した遊動自在な球状弁を球状弁が弁座よりも上の位置に浮いて存在するように介在させ、かつ、下方の圧縮スプリングが存在する連通管の場所に水平方向に一端が封栓され、他端が中央凹陥部に連通する通気管を備えるフレーム本体４の下面に設けられる自動切替機構５、これらフレーム本体４および自動切替機構５を軸承する中空管８および上端が自動切替機構５の中央凹陥部５ｆに連通し、下端がバキューム機器に連通されている前記中空軸８の内部に設けられた中空軸７を備えるもの（特許文献４参照）等が開示されている。
特開平８−１４８５４８号公報 特開平９−１７４３６４号公報 特開２０００−１５８２６８号公報 特開２０００−２３２０８３号公報 For example, switching to communicate the chuck body, the recessed portion, the vent water passing mechanism, the plurality of annular partitions, and the annular partition groove partitioned by the vent water passing mechanism and the plurality of annular partitions, as disclosed above. In a chuck comprising a valve, a disk-shaped mounting base that fits into the recessed portion, and a plurality of annular mounting bases that fit outward from the disk-shaped mounting base, adjacent to the disk-shaped mounting base Glass fiber mixed with a paste-like sintering agent as an air-permeable member for the gap to the annular gap between the annular board and the annular gap between the annular board and the adjacent annular board In addition, it is a configuration in which a filler is filled as a void-impermeable member, and in addition, an adhesive tape is attached as a void-impermeable member (see Patent Document 1) And a suction area of the semiconductor wafer polishing method table of the semiconductor wafer A vent plate is partitioned with an annular partition film mainly composed of an adhesive (refer to Patent Document 2) and a breathable porous ceramic disc as a center. A plurality of breathable porous ceramic annular bodies having the same height and the same height are arranged, and the ventilation between the breathable porous ceramic disk and the breathable porous ceramic annular body Between the porous porous ceramic annular bodies, a non-breathable thin-film annular partition wall of thermal spray ceramic having a width of 0.1 to 0.8 mm and the same height as the disk is arranged as a whole. A wafer mounting plate for a semiconductor wafer polishing method that constitutes a single disk (see Patent Document 3), or a hollow shape provided with valve seats 5s of spherical valves 5z at the bottoms of a plurality of annular grooves 4a to 4d, respectively. Each communication pipe 5h is erected and this communication pipe A freely movable spherical valve sandwiched between the upper compression spring 5j and the lower compression spring 5i is interposed in the part so that the spherical valve is floating above the valve seat, and the lower compression spring The automatic switching mechanism 5 provided on the lower surface of the frame main body 4 provided with a vent pipe whose one end is horizontally sealed at the place of the communicating pipe where the other end is communicated and the other end communicates with the central recessed portion, the frame main body 4 and the automatic switching A hollow tube 8 bearing the mechanism 5 and a hollow shaft 7 provided inside the hollow shaft 8 whose upper end communicates with the central recess 5f of the automatic switching mechanism 5 and whose lower end communicates with a vacuum device. (See Patent Document 4) and the like.
JP-A-8-148548 JP-A-9-174364 JP 2000-158268 A JP 2000-232083 A

つまり、特許文献１に記載されているものは、不通気部材で形成された複数の環状仕切５を備えており、特許文献２に記載されているものは、接着剤を主成分とする環状仕切膜を介在させて区画したものでは、環状仕切膜３０、３１、３２、３３が接着剤を硬化させるものであり、特許文献３に記載のものは、溶射セラミックの非通気性薄膜環状仕切壁４が配列されて全体として１枚の円盤を構成しているものであり、特許文献４に記載されているものでも、溶射セラミックの非通気性薄膜環状仕切壁を備えているものであるが、小さいサイズの半導体ウエハと大きいサイズの半導体ウエハとの研磨方法のバキューム系の切替の開示はされていないものである。   That is, what is described in Patent Document 1 includes a plurality of annular partitions 5 formed of an air-impermeable member, and what is described in Patent Document 2 is an annular partition mainly composed of an adhesive. In the case of partitioning with a film interposed therebetween, the annular partition films 30, 31, 32, 33 are for curing the adhesive, and the one described in Patent Document 3 is a non-breathable thin film annular partition wall 4 of thermal sprayed ceramic. Are arranged to form a single disk as a whole, and even those described in Patent Document 4 are provided with a non-breathable thin film annular partition wall of thermal spray ceramic, but are small There is no disclosure of switching of a vacuum system in a polishing method between a semiconductor wafer of a size and a semiconductor wafer of a large size.

その為に、本願出願の出願人は特願２００６−０４６１４８でチャックプレートの表面に通気性部材と不通気部材が混在しない先願をしたが、大きいサイズの半導体ウエハを研磨加工する場合はチャックプレートの全面でバキューム吸着して行うため問題がないものの、小さいサイズの半導体ウエハを加工する場合、中心位置は変えることなくチャックプレートの中程にバキューム吸着して加工していたが、半導体ウエハの外周辺のチャックプレートにバキュームによる目詰まりが発生していた。   Therefore, the applicant of the present application made a prior application in Japanese Patent Application No. 2006-046148 in which a breathable member and a non-ventilated member are not mixed on the surface of the chuck plate. However, when polishing a large semiconductor wafer, the chuck plate Although there is no problem because vacuum suction is performed on the entire surface of the wafer, when processing a small-sized semiconductor wafer, the center position is not changed and vacuum suction is performed in the middle of the chuck plate. The peripheral chuck plate was clogged with vacuum.

本発明の研磨盤の半導体ウエハの研磨方法は、前述の課題に鑑み、鋭意研鑽の結果、円板状のチャックプレートと、カップ状のチャックホルダーとから成り、チャックプレートは通気部材で形成すると共に内側円形状プレートと外側環状プレートとに形成し、内側円形状プレートと外側環状プレートとの間に不通気性のリング状の仕切部材を上面を平坦状にして嵌入させ、チャックホルダーは不通気性部材で形成すると共に仕切部材の内側と外側に連繋する内側流体流通部と外側流体流通部とを形成したユニバーサルチャックを用いて、チャックプレートの上面の仕切部材の内側と外側にわたって半導体ウエハをバキュームさせて研磨加工中は内側流体流通部と外側流体流通部との両方を負圧にし、仕切部材の内側のみに半導体ウエハをバキュームさせて研磨加工中は内側流体流通部は負圧にし外側流体流通部は加圧にするものである。   In view of the above-mentioned problems, the polishing method for a semiconductor wafer of a polishing disk according to the present invention is composed of a disc-shaped chuck plate and a cup-shaped chuck holder as a result of diligent research, and the chuck plate is formed by a ventilation member. The inner circular plate and outer annular plate are formed, and an air-permeable ring-shaped partition member is fitted between the inner circular plate and the outer annular plate with the flat top surface, and the chuck holder is air-impermeable. The semiconductor wafer is vacuumed over the inside and outside of the partition member on the upper surface of the chuck plate using a universal chuck formed with a member and having an inner fluid circulation part and an outer fluid circulation part connected to the inside and outside of the partition member. During polishing, negative pressure is applied to both the inner fluid circulation part and the outer fluid circulation part, and the semiconductor wafer is vacuumed only inside the partition member. Over during the polishing process by arm inner fluid circulation portion is a negative pressure outside the fluid flow section is for the pressure.

本発明半導体ウエハの研磨方法は、ユニバーサルチャックのチャックプレートを通気部材で形成すると共に内側円形状プレートと外側環状プレートとに形成し、内側円形状プレートと外側環状プレートとの間に不通気性のリング状の仕切部材を上面を平坦状にして嵌入させたユニバーサルチャックを用いて、大きなサイズの半導体ウエハをバキュームさせて研磨加工中は内側流体流通部と外側流体流通部との両方を負圧にし、小さいサイズの半導体ウエハをバキュームさせて研磨加工中は内側流体流通部は負圧にし外側流体流通部は加圧にすることにより、研磨加工中でも半導体ウエハの外周辺のチャックプレートに目詰まりを起こすことなく次の研磨加工がスムーズに行われるもので、極めて有意義な効果を奏し実用性の高い画期的ななものである。   In the semiconductor wafer polishing method according to the present invention, the chuck plate of the universal chuck is formed by the ventilation member and is formed by the inner circular plate and the outer annular plate, and the air permeability is not formed between the inner circular plate and the outer annular plate. Using a universal chuck fitted with a ring-shaped partitioning member with a flat top surface, a large semiconductor wafer is vacuumed to make both the inner fluid circulation part and the outer fluid circulation part negative pressure during polishing. During vacuum polishing by vacuuming a small size semiconductor wafer, the inner fluid circulation part is negative and the outer fluid circulation part is pressurized, so that the chuck plate around the semiconductor wafer is clogged even during polishing. The next polishing process is performed smoothly without any breakthrough, and it has a highly significant effect and is highly innovative. It is.

以下、本発明の半導体ウエハの研磨方法の実施例の図面を用いて詳細に説明すると、図１は本発明の半導体ウエハの研磨方法の実施例の概要を説明するための概要側面説明図である。   DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a semiconductor wafer polishing method according to an embodiment of the present invention will be described in detail with reference to the drawings. FIG. .

本発明は、研磨装置における半導体ウエハの研磨方法に関するものであって、更に、詳細には、半導体ウエハをバキューム吸着させる通気性のチャックプレートに不通気性の仕切部材を形成したユニバーサルチャックを用いた半導体ウエハの研磨方法に関するものであり、上面に半導体ウエハＷをバキューム吸着する円板状のチャックプレート１と、該チャックプレート１を嵌着させるカップ状のチャックホルダー２とから成り、前記チャックプレート１は通気部材で形成すると共に内側円形状プレート１ａと外側環状プレート１ｂとに形成し、該内側円形状プレート１ａと外側環状プレート１ｂとの間に不通気性のリング状の仕切部材３を上面を平坦状にして嵌入させ、前記チャックホルダー２は不通気性部材で形成すると共に前記仕切部材３の内側と外側に夫々連繋する内側流体流通部４と外側流体流通部５とを形成したユニバーサルチャックを用いて、前記チャックプレート１の上面の仕切部材３の内側と外側にわたって半導体ウエハＷをバキュームさせて研磨加工中は内側流体流通部４と外側流体流通部５との両方を負圧にし、仕切部材３の内側のみに半導体ウエハＷをバキュームさせて研磨加工中は内側流体流通部４は負圧にし外側流体流通部５は加圧にすることを特徴とするものである。   The present invention relates to a method for polishing a semiconductor wafer in a polishing apparatus. More specifically, the present invention uses a universal chuck in which an air-permeable partition member is formed on an air-permeable chuck plate for vacuum-adsorbing a semiconductor wafer. The present invention relates to a method for polishing a semiconductor wafer, and comprises a disc-shaped chuck plate 1 for vacuum-sucking a semiconductor wafer W on an upper surface, and a cup-shaped chuck holder 2 on which the chuck plate 1 is fitted. Is formed of an air-permeable member and is formed on the inner circular plate 1a and the outer annular plate 1b, and an air-permeable ring-shaped partition member 3 is provided between the inner circular plate 1a and the outer annular plate 1b on the upper surface. The chuck holder 2 is formed of an air-impermeable member and is inserted into a flat shape. The semiconductor wafer W is vacuumed over the inner side and the outer side of the partition member 3 on the upper surface of the chuck plate 1 by using a universal chuck in which an inner fluid circulation part 4 and an outer fluid circulation part 5 connected to the inner side and the outer side of the chuck plate 1 are formed. During the polishing process, both the inner fluid circulation part 4 and the outer fluid circulation part 5 are set to a negative pressure, and the semiconductor wafer W is vacuumed only inside the partition member 3, and the inner fluid circulation part 4 is negative during the polishing process. The outer fluid circulation portion 5 is pressurized and is pressurized.

即ち、本発明の半導体ウエハの研磨方法は、半導体ウエハＷの研磨装置において実施されるもので、例えば、ロータリーテーブルに等間隔で複数配設されたチャック機構をユニバーサルチャックとするもので、該チャック機構にバキューム吸着された半導体ウエハＷを上方からポリシングクロスを張設したポリシングプレート、又は、ラッピングプレートで研磨加工を施すものである。   That is, the semiconductor wafer polishing method of the present invention is implemented in a semiconductor wafer W polishing apparatus. For example, a chuck mechanism that is disposed in a rotary table at equal intervals is a universal chuck. The semiconductor wafer W vacuum-adsorbed by the mechanism is polished by a polishing plate with a polishing cloth stretched from above or a lapping plate.

そして、チャックプレート１は、ポーラスセラミック等の通気部材で後述する内側円形状プレート１ａと外側環状プレート１ｂとにより形成して、上面に半導体ウエハＷをバキューム吸着させるものであり、実施例では１２インチと８インチの半導体ウエハＷを吸着させるように１２インチのサイズのユニバーサルチャックであるが、サイズは特に限定するものではなくあらゆるサイズで実施できるものである。   The chuck plate 1 is formed of an inner circular plate 1a and an outer annular plate 1b, which will be described later, with a ventilation member such as a porous ceramic, and adsorbs the semiconductor wafer W on the upper surface. In the embodiment, the chuck plate 1 is 12 inches. Although the universal chuck has a size of 12 inches so as to adsorb the 8-inch semiconductor wafer W, the size is not particularly limited and can be implemented in any size.

次に、チャックホルダー２は、不通気性部材のアルミナセラミック、金属製等でカップ状に形成されたのもので、上方にチャックプレート１を嵌着させるものである。   Next, the chuck holder 2 is a cup-shaped member made of an air-impermeable member such as alumina ceramic, metal, or the like, on which the chuck plate 1 is fitted.

更に、内側円形状プレート１ａは、チャックプレート１の内側に位置するものであり、小さいサイズの半導体ウエハＷと同径に形成されているものであり、外側環状プレート１ｂは、チャックプレート１の外側に位置するものであり、外径が大きいサイズの半導体ウエハＷと同径に形成されているものであり、外側環状プレート１ｂの外側に更に少なくとも１つの環状プレートを備え、夫々接続する流体流通部を備えても構わないものである。   Further, the inner circular plate 1 a is located inside the chuck plate 1 and is formed to have the same diameter as the small-sized semiconductor wafer W, and the outer annular plate 1 b is formed outside the chuck plate 1. And is formed to have the same diameter as that of the semiconductor wafer W having a large outer diameter, and is further provided with at least one annular plate outside the outer annular plate 1b and connected to each other. May be provided.

更には、リング状の仕切部材３は、不通気性部材のアルミナセラミック、金属等で形成したもので、内側円形状プレート１ａと外側環状プレート１ｂとの間に上面を平坦状にして嵌入させているもので、つまり、内側円形状プレート１ａの外径と外側環状プレート１ｂの内径との間にはリング状の仕切部材３が嵌入できるリング状のスペースを予め形成しているものである。   Further, the ring-shaped partition member 3 is made of an air-impermeable member such as alumina ceramic or metal, and is fitted between the inner circular plate 1a and the outer annular plate 1b with a flat upper surface. That is, a ring-shaped space into which the ring-shaped partition member 3 can be fitted is formed in advance between the outer diameter of the inner circular plate 1a and the inner diameter of the outer annular plate 1b.

次いで、内側流体流通部４と外側流体流通部５とは、チャックホルダー２の底面を貫通させて図示しない供給源と供給系を介して接続しているもので、チャックプレート１の仕切部材３の内側の内側円形状プレート１ａの直下に内側流体流通部４を連繋させ、チャックプレート１の仕切部材３の外側の外側環状プレート１ｂの直下に外側流体流通部５を連繋させているものである。   Next, the inner fluid circulation portion 4 and the outer fluid circulation portion 5 are connected through a supply source (not shown) through the bottom surface of the chuck holder 2, and are connected to the partition member 3 of the chuck plate 1. The inner fluid circulation part 4 is connected directly below the inner circular plate 1a on the inner side, and the outer fluid circulation part 5 is connected directly below the outer annular plate 1b outside the partition member 3 of the chuck plate 1.

そして、本発明の半導体ウエハの研磨方法は、前記ユニバーサルチャックを用いて、チャックプレート１の上面の仕切部材３の内側と外側にわたって半導体ウエハＷ、つまり、大きいサイズの半導体ウエハＷをバキュームさせて研磨加工中は内側流体流通部４と外側流体流通部５との両方を負圧にして全体を吸着した状態で研磨加工し、チャックプレート１の上面の仕切部材３の内側のみに半導体ウエハＷ、つまり、小さいサイズの半導体ウエハＷをバキュームさせて研磨加工中は内側流体流通部４は負圧にしで吸着させ、外側流体流通部５は加圧にして目詰まりを防止しながら研磨加工するものである。   In the semiconductor wafer polishing method of the present invention, the semiconductor wafer W, that is, a large-sized semiconductor wafer W is vacuumed and polished across the inside and outside of the partition member 3 on the upper surface of the chuck plate 1 using the universal chuck. During the processing, the inner fluid circulation part 4 and the outer fluid circulation part 5 are both subjected to polishing with negative pressure applied to the whole, and the semiconductor wafer W, that is, only the inside of the partition member 3 on the upper surface of the chuck plate 1 is processed. During the polishing process by vacuuming the small-sized semiconductor wafer W, the inner fluid circulation part 4 is adsorbed at a negative pressure, and the outer fluid circulation part 5 is pressurized and polished while preventing clogging. .

次いで、内側流体流通部４と外側流体流通部５とは、チャックホルダー２の中心と仕切部材３の外方にバキュームポンプ等のエア駆動源に連繋された供給系であり、エアを吸引させてバキューム吸着すると共に、半導体ウエハＷの取り外しの時はエアを噴出させ、又、チャックプレート１に洗浄が必要なときは、純水等の水流を噴出させたりするもので、配設手段は各種考慮されるもので特に限定するものではないものである。   Next, the inner fluid circulation part 4 and the outer fluid circulation part 5 are a supply system connected to an air driving source such as a vacuum pump at the center of the chuck holder 2 and the outside of the partition member 3, and sucks air. In addition to vacuum adsorption, air is ejected when the semiconductor wafer W is removed, and when the chuck plate 1 needs to be cleaned, water flow such as pure water is ejected. However, it is not particularly limited.

本発明の半導体ウエハの研磨方法は、特に、昨今要求されいる超高精度の平坦精度及び鏡面精度、並びに、極薄化、拡径化されＭＥＭＳデバイス又はＮＥＭＳデバイスに製造する半導体ウエハに研磨加工を施すポリシングマシーン並びにラッピングマシーンに用いるもので、半導体ウエハの外周辺にバキュームによる研磨屑等の不純物を目詰まりさせることなく、強いては超高精度の研磨加工を可能とする半導体ウエハの研磨方法を提供するものである。   The method for polishing a semiconductor wafer according to the present invention is particularly suitable for polishing a semiconductor wafer to be manufactured into a MEMS device or a NEMS device that has been required for ultra-high flatness and mirror surface accuracy, and has been extremely thinned and enlarged. Used for polishing machines and lapping machines to be applied, providing a semiconductor wafer polishing method that enables ultra-high precision polishing without clogging impurities such as vacuum polishing debris around the outer periphery of the semiconductor wafer To do.

図１は本発明の半導体ウエハの研磨方法の実施例の概要を説明するための概要側面説明図である。FIG. 1 is a schematic side view for explaining an outline of an embodiment of a semiconductor wafer polishing method of the present invention.

符号の説明Explanation of symbols

Ｗ 半導体ウエハ
１ チャックプレート
１ａ 内側円形状プレート
１ｂ 外側環状プレート
２ チャックホルダー
３ 仕切部材
４ 内側流体流通部
５ 外側流体流通部 W Semiconductor wafer 1 Chuck plate 1a Inner circular plate 1b Outer annular plate 2 Chuck holder 3 Partition member 4 Inner fluid circulation part 5 Outer fluid circulation part

Claims (1)

上面に半導体ウエハをバキューム吸着する円板状のチャックプレートと、該チャックプレートを嵌着させるカップ状のチャックホルダーとから成り、前記チャックプレートは通気部材で形成すると共に内側円形状プレートと外側環状プレートとに形成し、該内側円形状プレートと外側環状プレートとの間に不通気性のリング状の仕切部材を上面を平坦状にして嵌入させ、前記チャックホルダーは不通気性部材で形成すると共に前記仕切部材の内側と外側に夫々連繋する内側流体流通部と外側流体流通部とを形成したユニバーサルチャックを用いて、前記チャックプレートの上面の仕切部材の内側と外側にわたって半導体ウエハをバキュームさせて研磨加工中は内側流体流通部と外側流体流通部との両方を負圧にし、仕切部材の内側のみに半導体ウエハをバキュームさせて研磨加工中は内側流体流通部は負圧にし外側流体流通部は加圧にすることを特徴とする半導体ウエハの研磨方法。   It consists of a disk-shaped chuck plate for vacuum-sucking a semiconductor wafer on the upper surface, and a cup-shaped chuck holder to which the chuck plate is fitted. The chuck plate is formed by a ventilation member, and an inner circular plate and an outer annular plate And a non-breathable ring-shaped partition member is fitted between the inner circular plate and the outer annular plate with a flat upper surface, and the chuck holder is formed of a non-breathable member and Polishing is performed by vacuuming the semiconductor wafer over the inside and outside of the partition member on the upper surface of the chuck plate using a universal chuck formed with an inner fluid circulation part and an outer fluid circulation part respectively connected to the inside and outside of the partition member. Inside, negative pressure is applied to both the inner fluid circulation part and the outer fluid circulation part, so that only the inside of the partition member is semiconductive. Polishing a semiconductor wafer, characterized in that during the polishing of the wafer by vacuum inside the fluid flowing portion is a negative pressure outside the fluid circulation portion to pressure.
JP2007036128A 2007-02-16 2007-02-16 Method of polishing semiconductor wafer Pending JP2008204995A (en)

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KR1020070049475A KR20080076669A (en) 2007-02-16 2007-05-22 The method to grind the semiconductor wafer

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009056518A (en) * 2007-08-30 2009-03-19 Kyocera Corp Suction device, machining system having the same, and machining method
JP2013215868A (en) * 2012-04-12 2013-10-24 Disco Corp Chuck table
JP2021065991A (en) * 2019-10-25 2021-04-30 株式会社ディスコ Method for grinding work-piece

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09174364A (en) * 1995-12-20 1997-07-08 Shibayama Kikai Kk Universal chuck table for semiconductor wafer
JP2003257909A (en) * 2002-03-04 2003-09-12 Nippei Toyama Corp Processing device of semiconductor wafer
JP2003332410A (en) * 2002-05-17 2003-11-21 Tokyo Seimitsu Co Ltd Vacuum sucking apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09174364A (en) * 1995-12-20 1997-07-08 Shibayama Kikai Kk Universal chuck table for semiconductor wafer
JP2003257909A (en) * 2002-03-04 2003-09-12 Nippei Toyama Corp Processing device of semiconductor wafer
JP2003332410A (en) * 2002-05-17 2003-11-21 Tokyo Seimitsu Co Ltd Vacuum sucking apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009056518A (en) * 2007-08-30 2009-03-19 Kyocera Corp Suction device, machining system having the same, and machining method
JP2013215868A (en) * 2012-04-12 2013-10-24 Disco Corp Chuck table
JP2021065991A (en) * 2019-10-25 2021-04-30 株式会社ディスコ Method for grinding work-piece
JP7353715B2 (en) 2019-10-25 2023-10-02 株式会社ディスコ Grinding method of workpiece

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