CN101290928A - Light emission device - Google Patents

Abstract

A light emission device includes a plurality of semiconductor light emitting elements and a supporting substrate on which the plurality of semiconductor light emitting elements are flip-chip mounted. Each of the plurality of semiconductor light emitting elements has a substantially rectangular shape which has a first side and a second side different from the first side. Light emitted from a first element end face on the first side is stronger than light emitted from a second element end face on the second side. Each first side of each of the plurality of semiconductor light emitting elements faces each other substantially in parallel.

Description

Light-emitting device

Technical field

The present invention relates to utilize the light-emitting device of semiconductor light-emitting elements, related in particular to the light-emitting device that a plurality of semiconductor light-emitting elements have been installed.

Background technology

Semiconductor light-emitting elements is installed on supporting substrate or encapsulation etc. with the whole bag of tricks.Carry out the flip-chip installation at the semiconductor light-emitting elements that is provided with positive and negative electrode with the one side side by the positive and negative electrode side joint being incorporated into supporting substrate, thereby can light be taken out from the substrate-side of element.As semiconductor light-emitting elements being carried out the method that flip-chip is installed, for example, at first, on the conductor wiring that can mounting be provided with on the interarea of supporting substrate of semiconductor light-emitting elements, form pad, then, make that to be provided with the electrode surface and the pad of semiconductor light-emitting elements of positive and negative pair of electrodes with the one side side opposed, and positive and negative two electrodes of semiconductor element are contacted with pad, thereby conductor wiring is engaged with the electrode of semiconductor light-emitting elements.Like this, engage with positive and negative two electrodes of semiconductor light-emitting elements, realize both conducting by the conductor wiring of pad to supporting substrate.

Also a plurality of semiconductor light-emitting elements (for example, patent documentation 1～4) can be installed in a light-emitting device.Expression one example among Figure 20.Light-emitting device shown in Figure 20 is containing the Al of glass ₂O ₃The surface of substrate 51 forms the circuit pattern 52 that contains W, Ni, Au, and has installed with 3 * 3 arrangement flip-chip on circuit pattern 52 by the Au pad that to amount to 9 GaN be LED element 53.And, be the electrode structure of LED element 53 though omitted GaN, itself and circuit pattern 52 corresponding settings.

Like this, installed in the light-emitting device of light-emitting component at flip-chip, the light that produces in light-emitting component penetrates from the face or the side of the substrate-side of element basically.Reflection such as the reflecting plate that the light that penetrates from the end face of element side is provided with by light-emitting device usually and be fetched to luminous inspection surface side.

Patent documentation 1:WO2004/082036

Patent documentation 2: the spy opens the 2005-85548 communique

Patent documentation 3: the spy opens the 2005-109434 communique

Patent documentation 4: the spy opens the 2006-66700 communique

But the light meeting supported substrate or the sealing resin etc. before the plate reflection that is reflected that penetrate from the element end face absorb a part.Therefore, in light-emitting device in the past, can decay as the light of light-emitting device and before being removed, can not make sufficient contribution to light-emitting device integral body luminous from the light of element end face.

Summary of the invention

Inventors of the present invention find: when a plurality of semiconductor light-emitting elements is installed, by semiconductor light-emitting elements is mounted to the row shape with the specific electrodes structure, can take out the light from the element end face effectively, realize the present invention thus.

In order to address the above problem, light-emitting device of the present invention, comprise: semiconductor light-emitting elements, it sets gradually first semiconductor layer of first conductivity type and second semiconductor layer of second conductivity type on light-transmitting substrate, exposed division at first semiconductor layer is provided with first electrode, is provided with second electrode at second semiconductor layer; And supporting substrate, the described semiconductor light-emitting elements of its mounting; It is rectangle that semiconductor light-emitting elements is overlooked down, at least have first limit and second limit different with first limit, the light ratio that penetrates from the element end face of first avris is stronger from the light that the element end face of described second avris penetrates, and plural described semiconductor light-emitting elements is installed on the described supporting substrate by flip-chip with the row shape according to mutual almost parallel in described first limit and relative mode.

And, light-emitting device of the present invention except that above-mentioned formation, following formation also capable of being combined.

(1), sees that to the direction of the opposed edge on this limit relative with the exposed division and the opposed edge of first semiconductor layer of first avris, the area of establishing second electrode in this zone is R for first limit of each semiconductor light-emitting elements ₁, first limit length be L ₁,, see that relative with the exposed division and the opposed edge of first semiconductor layer of second avris, the area of establishing second electrode in this zone is R for second limit to the direction of the opposed edge on this limit ₂, second limit length be L ₂, under this situation, R ₁With L ₁Ratio R ₁/ L ₁Compare R ₂With L ₂Ratio R ₂/ L ₂Littler.

For the opposed edge on first limit, see that (2) relative with the exposed division and first limit of first semiconductor layer of opposed avris, the area of establishing second electrode in this zone is R to the direction on first limit ₁', the length on first limit is L ₁' time, R ₁' with L ₁' ratio R ₁'/L ₁' with R ₁/ L ₁About equally.

(3) second limits are the limits with the first limit adjacency.

(4) second electrode of each semiconductor light-emitting elements has at first avris: first extension that more extends to the inboard of element by the first clamping zone portion of first limit and exposed division clamping, than this clamping zone portion, on the length direction on first limit, the first clamping zone portion is longer than first extension.

(5) second electrodes have second extension at second avris, have been made of second electrode of second avris second extension.

(6) second electrodes have at second avris: the second clamping zone portion, second extension that more extends to the inboard of element than this second clamping zone portion, the length A of the first clamping zone portion on the length direction on first limit ₁Length L with first limit ₁Ratio A ₁/ L ₁, with the length A of the second clamping zone portion on the length direction on second limit ₂Length L with second limit ₂Ratio A ₂/ L ₂About equally or bigger than it.

(7) on the length direction on second limit, the second clamping zone portion is shorter than second extension.

(8) overlook down, for the area S in the zone of the opposed edge on limit of semiconductor light-emitting elements and this limit and the second semiconductor layer clamping, for the ratio S/L of the length L on this limit, the S on first limit ₁/ L ₁S with second limit ₂/ L ₂About equally.

(9) overlook down, for the area S in the zone of the opposed edge on limit of semiconductor light-emitting elements and this limit and the second semiconductor layer clamping, for the ratio S/L of the length L on this limit, the S on first limit ₁/ L ₁S than second limit ₂/ L ₂Littler.

(10) second limits are limits different with the opposed edge on first limit, its S/L of opposed edge on first limit and first limit about equally, its S/L of opposed edge on second limit and second limit is also about equally.

(11) second electrodes are than the more close first avris setting of first electrode.

(12) semiconductor light-emitting elements has luminescent layer between first semiconductor layer and second semiconductor layer, at the exposed division of first semiconductor layer and be provided with between second semiconductor layer of second electrode, the end face of luminescent layer exposes, supporting substrate has the cloth line electrode of first and second electrode that connects semiconductor light-emitting elements, and the cloth line electrode is overlooked down under the end face exposed division that is arranged at luminescent layer at least.

(invention effect)

According to light-emitting device of the present invention, in a plurality of semiconductor light-emitting elements opposing end faces, the light that can penetrate the end face from each element effectively reflects, and the light that can improve light-emitting device thus takes out efficient.

Description of drawings

Fig. 1 is the diagrammatic top view of the semiconductor light-emitting elements that relates to of expression embodiments of the present invention.

Fig. 2 A is the diagrammatic top view of the upper surface outward appearance of the light-emitting device that relates to of expression embodiments of the present invention.

Fig. 2 B is zone (its area R of the light-emitting component that relates to of expression embodiments of the present invention ₁And R ₂) diagrammatic top view.

Fig. 3 is the diagrammatic top view of the supporting substrate that relates to of expression embodiments of the present invention.

Fig. 4 is used to illustrate concept map of the present invention.

Fig. 5 A is the diagrammatic top view of the light-emitting device that relates to of expression embodiments of the present invention.

Fig. 5 B is zone (its area R of the light-emitting component that relates to of expression embodiments of the present invention ₁And R ₂) diagrammatic top view.

Fig. 6 A is the diagrammatic top view of the light-emitting device that relates to of expression embodiments of the present invention.

Fig. 6 B is zone (its area R of the light-emitting component that relates to of expression embodiments of the present invention ₁And R ₂) diagrammatic top view.

Fig. 7 A is the diagrammatic top view of the light-emitting device that relates to of expression embodiments of the present invention.

Fig. 7 B is zone (its area R of the light-emitting component that relates to of expression embodiments of the present invention ₁And R ₂) diagrammatic top view.

Fig. 8 A is the diagrammatic top view of the light-emitting device that relates to of expression embodiments of the present invention.

Fig. 8 B is zone (its area R of the light-emitting component that relates to of expression embodiments of the present invention ₁And R ₂) diagrammatic top view.

Fig. 9 is the diagrammatic top view of the light-emitting device that relates to of expression embodiments of the present invention.

Figure 10 A is the diagrammatic top view of the light-emitting device that relates to of expression embodiments of the present invention.

Figure 10 B is zone (its area R of the light-emitting component that relates to of expression embodiments of the present invention ₁And R ₂) diagrammatic top view.

Figure 11 A is the diagrammatic top view of the light-emitting device that relates to of expression embodiments of the present invention.

Figure 11 B is zone (its area R of the light-emitting component that relates to of expression embodiments of the present invention ₁And R ₂) diagrammatic top view.

Figure 12 A is the diagrammatic top view of the upper surface outward appearance of the light-emitting device that relates to of expression embodiments of the invention 1.

Figure 12 B is zone (its area R of the light-emitting component that relates to of expression embodiments of the present invention ₁And R ₂) diagrammatic top view.

Figure 13 is the diagrammatic top view of the upper surface outward appearance of the light-emitting device that relates to of expression comparative example 1 of the present invention.

Figure 14 is the diagrammatic top view of the semiconductor light-emitting elements that relates to of expression embodiments of the invention 2.

Figure 15 A is the diagrammatic top view of the upper surface outward appearance of the light-emitting device that relates to of expression embodiments of the invention 2.

Figure 15 B is zone (its area R of the light-emitting component that relates to of expression embodiments of the present invention ₁And R ₂) diagrammatic top view.

Figure 16 is the diagrammatic top view of the upper surface outward appearance of the light-emitting device that relates to of expression comparative example 2 of the present invention.

Figure 17 is the diagrammatic top view of the semiconductor light-emitting elements that relates to of expression embodiments of the invention 3.

Figure 18 A is the diagrammatic top view of the upper surface outward appearance of the light-emitting device that relates to of expression embodiments of the invention 3.

Figure 18 B is zone (its area R of the light-emitting component that relates to of expression embodiments of the present invention ₁And R ₂) diagrammatic top view.

Figure 19 is the diagrammatic top view of the upper surface outward appearance of the light-emitting device that relates to of expression comparative example 3 of the present invention.

Figure 20 is the diagrammatic top view of the upper surface outward appearance of the existing light-emitting device of expression.

1,21,31, the 41-light-emitting zone among the figure:; 2,22,32,42-exposed division; 3-second electrode; 4-first electrode; 5,5a, 5b, 25,35a, 35b, 45a～45d-extension; 6,6a, 6b, 6c, 6d, 26a, 26b, 36,46a～46c-clamping zone portion; 7, the extension of 7a, 7b, 7c, 7d, 27,37a～37d, 47a～47c-second avris; 8, the clamping zone portion of 8a, 8b, 8c, 38a～38c, 481,48b-second avris; 9,29,39,49-supporting substrate; 10a～10c, 210a～210c, 310a～310c, 410a～410c-conductor wiring; 11,211,311,411-first limit; 12,212,312,412-second limit; 13,213,313, the opposed edge on 413-first limit; 14,214,314, the opposed edge on 414-second limit; 15,215,315, the outside join domain of 415-second electrode; 16,216,316, the outside join domain of 416-first electrode; The 100-semiconductor light-emitting elements; 101,201,301,401-light-emitting device; 23,33,43-p electrode; 24,34,44-n electrode; 220,320,420-light-transmitting substrate; 51-Al ₂O ₃Substrate; The 52-circuit pattern; 53-GaN is the LED element.

Embodiment

(execution mode 1)

Fig. 1, Fig. 2 A and Fig. 2 B are the expression semiconductor light-emitting elements 100 that relates to of present embodiment and the diagrammatic top view of light-emitting device 101.

Semiconductor light-emitting elements 100 shown in Figure 1 is formed with first semiconductor layer of first conductivity type and second semiconductor layer of second conductivity type successively on light-transmitting substrate, the part of first semiconductor layer is exposed from second semiconductor layer, overlooks down to have: comprise that the zone of exposing that light-emitting zone 1, first semiconductor layer of the lit-par-lit structure of second semiconductor layer and first semiconductor layer expose is an exposed division 2.Second semiconductor layer surface at light-emitting zone 1 is provided with second electrode 3, is provided with first electrode 4 in first semiconductor layer surface of exposing zone 2, can penetrate light from the end face of each avris.The light intensity that the light ratio that penetrates from the end face of first limit, 11 sides of semiconductor light-emitting elements 100 penetrates from the end face of second limit, 12 sides.

Semiconductor light-emitting elements 100 shown in Figure 1 is installed on the supporting substrate 9 by flip-chip shown in Fig. 2 A, its first limit, 11 mutual almost parallels and be configured to the row shape opposed to each other.In the light-emitting device 101 of Fig. 2, to arrange the light-emitting component 100 of two same configuration has been installed, each element is connected with the conductor wiring 10a～10c on the surface of supporting substrate 9 by conductive components such as pads.At this moment, shown in Fig. 2 A, the outside join domain 15 of second electrode of an element and the outside join domain 16 of first electrode are connected with different conductor wiring.

By adopting such light-emitting device 101, at two opposed end faces of light-emitting component, the light that can be effectively the end face from each element be penetrated reflects, and can suppress the loss of the light that causes because of supported substrate absorption etc., therefore, can improve light taking-up efficient.Promptly, as among Fig. 4 with shown in the concept map, if a plurality of semiconductor light-emitting elements are carried out flip-chip according to the relative mode in the end face almost parallel ground of each element to be installed in abutting connection with ground, then the light that penetrates from a side light-emitting component end face can be by the opposing party's element end face reflection, thus, can be to luminous inspection surface side, be typically the light-transmitting substrate side-draw and go out.In the light-emitting device 101 of present embodiment, first limit, 11 mutual relative modes according to light ratio second limit the last 12 of penetrating from end face have disposed two elements, therefore, the situation relative with making second limit 12 compared, and can make by the light that is fetched to luminous inspection surface side behind the relative element end face reflection stronger.

Particularly, semiconductor light-emitting elements 100 shown in Fig. 2 B, the area R in the zone of representing with the oblique line of bottom right ₁Area R than the zone of representing with upper right oblique line ₂Littler.For first limit 11 of semiconductor light-emitting elements 100, direction to the opposed edge 13 on this limit is seen, relative with the exposed division 2 and the opposed edge 13 of first semiconductor layer of first limit, 11 sides, with second electrode 3 in this zone in Fig. 2 B on the element in left side the oblique line with the bottom right represent.Also have, relative from the direction of the opposed edge 14 on this limit for second limit 12 with the exposed division 2 and the opposed edge 14 of first semiconductor layer of second limit, 13 sides, second electrode 3 in this zone is represented with upper right oblique line on the element on right side in Fig. 2 B.Here, install in the element of usefulness, be typically second electrode and be set on roughly whole of light-emitting zone at flip-chip, the shape of second electrode and light-emitting zone, area about equally, about above-mentioned R ₁, R ₂, clamping zone described later portion, extension etc. and second electrode or the relevant record of light-emitting zone, in any of second electrode and light-emitting zone, all can adopt.

Semiconductor light-emitting elements 100 shown in Fig. 2 B is if be made as the area R in the zone of representing with the oblique line of bottom right ₁Area R than the zone of representing with upper right oblique line ₂Littler, then can strengthen by the end face reflection on first limit 11 of each element and the light that is removed as described later from the little light of end face taking-up decay of first limit, 11 sides.Semiconductor light-emitting elements 100 its light-emitting zones 1 that are provided with second electrode are luminous.Therefore, the area R by the zone that reduces to represent with the oblique line of bottom right among Fig. 2 B ₁, can reduce the distance of in element, propagating from the light that the end face of first limit, 11 sides penetrates generally.Thus, as among Fig. 4 with shown in the concept map, absorbed light reduces in element before penetrate from the end face of first limit, 11 sides, can suppress the decay of the light that first limit, 11 sides penetrate.On the other hand, the distance that the light that penetrates from the end face of second limit, 12 sides is propagated in element on the whole than the end face from first limit, 11 sides penetrate wide, therefore, before the end face from second limit, 12 sides penetrates, in element, be absorbed easily, decay is increase easily.Therefore, shown in Fig. 2 B, by adopting the area R in the zone of representing with the oblique line of bottom right ₁Area R than the zone of representing with upper right oblique line ₂Littler element can suppress the decay of the light that penetrates from the end face of first limit, 11 sides relatively, and by according to making the relative mode of such end face dispose a plurality of light-emitting components, can realize improving the light-emitting device of light taking-up efficient.

Also have, second electrode 3 of semiconductor light-emitting elements 100 has: the extension 5 that more extends to the inboard of element by the 6a of clamping zone portion of first limit 11 and exposed division 2 clampings and 6b, than the 6a of clamping zone portion and 6b.In other words, the light-emitting zone 1 of semiconductor light-emitting elements 100 has down overlooking: independent part 6a and 6b, the connecting portion 5 that independent part 6a and 6b are connected with element internal of wire that is configured in first limit, 11 sides of semiconductor light-emitting elements 100.In the length of the edge direction on first limit 11, the length A of the 6a of clamping zone portion _aLength A with the 6b of clamping zone portion _bLength altogether is also longer than the length B of extension 5.And 6a of clamping zone portion and 6b, extension 5 have been covered the surface by second electrode 3 respectively.On the other hand, with second limit, 12 sides of the first limit adjacency, light-emitting zone 1 is made of extension 7.

Semiconductor light-emitting elements 100 as shown in Figure 1, be provided with than longer 6a of clamping zone portion of extension 5 and the light-emitting component of 6b if be made as in first limit, 11 sides relative with other elements, then can strengthen the light that is removed by the end face reflection of first limit, 11 sides of each element as described later from the little light of end face ejaculation decay of first limit, 11 sides.Semiconductor light-emitting elements 100 shown in Figure 1 is luminous at the light-emitting zone 1 that is provided with second electrode 3.Therefore,, can reduce before penetrating absorbed light in element, can suppress from the decay of the light of first limit, 11 sides ejaculation from end face to first limit, 11 sides by the 6a of clamping zone portion of second electrode 3 and 6b being arranged on position near first limit 11.On the other hand, extension 5 more extends to element internal than 6a of clamping zone portion and 6b, and the light that produces at this extension 5 can be absorbed in element before penetrating from first limit, 11 sides, made decay increase easily.Therefore, as shown in Figure 1,6a of clamping zone portion by making first limit, 11 sides and the length of 6b are longer than extension 5, can suppress the decay of the light that penetrates from the end face of first limit, 11 sides relatively, and, can realize improving light and take out the light-emitting device of efficient by according to making the relative mode of such end face dispose a plurality of light-emitting components.

The light intensity that penetrates from end face is preferably bigger than second avris different with first limit at first avris, that is, preferably make the plan view shape of light-emitting zone different with second avris at first avris with the distance that arrives each limit.Below, the light-emitting zone of each avris is described in detail.

(light-emitting component and light-emitting zone thereof)

Illustrated in light-emitting component of the present invention such as the enforcement mode 1, on supporting substrate, adjoin each other the configuration a plurality of elements in, by to mutually relative limit promptly second electrode on first limit adopt specific structure and also especially when second limit be under the situation on the limit of adjacency specific structure not to be adopted on second limit and first limit at interelement, thereby realize the excellent light-emitting device of luminous output.Below, its main composition, following the first～3 formation are described.

First formation is to comprise described later first according to the structure of element, two formations that constitute, promptly, wherein, on the opposed direction on first limit, the size in the opposed zone of the remote end by designing first limit and light-emitting zone or second electrode, it is adopted specific structure, thereby can penetrate the light of the luminous intensity of suitable element adjacency from first limit, the size in above-mentioned opposed zone particularly is the end of the opposed avris on first limit for example, opposed end, the end with first avris of the light-emitting zone of first avris or second electrode, size with the area in the zone of the first limit clamping.Also have, make up this first formation and the 3rd formation described later, region S between first limit in constituting according to the described later the 3rd and the light-emitting zone end of first avris, with first formation in first limit and and opposed second electrode tip in the first avris end between the difference in zone, the particular configuration of desirable design is adopted in the subregion of second electrode of first avris, also can obtain above-mentioned suitable light-emitting device thus.And when the limit more than two was compared, each regional area carried out standardization with the length on each limit and estimates.

In second constitutes, on first limit of interelement adjacency, by adopting specific structure, i.e. employing to have the structure of clamping zone portion described later and extension to second electrode or light-emitting zone, especially by the ratio that occupies is designed, can penetrate the light of the luminous intensity of suitable element adjacency thus on first limit from first limit.

The 3rd constitutes by reducing the distance of first limit and second electrode or light-emitting zone, particularly, compare second electrode or the end (apart from the near end of first back gauge) of light-emitting zone and the distance on first limit that reduces first avris with second limit, can penetrate the light of the luminous intensity of suitable element adjacency thus from first limit.

In above-mentioned first constitutes, as shown in Figure 4, observe from first avris, be configured in the near position of end face apart from first avris as the end (rear side end) with the light-emitting zone opposite side in the first avris end light-emitting zone that with the rear side end of the opposed above-mentioned remote end, light-emitting zone end (above-mentioned closely end) of first avris, promptly is arranged in first avris., by the internal reflection surface with this light-emitting zone be configured in first avris near, can strengthen light from these positions.And, as shown in Figure 4 and since have that repeated reflection because of the light-emitting zone inside of this first avris causes in light absorption inside, therefore,, can suppress light absorption by reducing the transmission distance of this light-emitting zone inside.Promptly, light-emitting zone at first avris, preferably reduce apart from the distance of above-mentioned rear side end, or reduce the subregion of distance, above-mentioned light-emitting zone between the width of this light-emitting zone, above-mentioned end (the first avris end and rear side end), more preferably satisfy said two devices.Particularly, with opposed first limit of adjacent element and not with adjacent element opposed and towards the limit in the outside of adjacent element for example towards the limit of the window portion of light-emitting device or reflecting part for example in the comparison on second limit, compare with non-opposed edge, reduce above-mentioned width, distance, the region area of the opposed edge (first limit) of this adjacent element.

Different with this first formation, as the 3rd above-mentioned formation, by reducing first avris apart from the distance of light-emitting zone end, promptly reduce area by the zone of first limit and this light-emitting zone end clamping, can will become the light light-emitting zone end of penetrating end face be configured in the element end near, as shown in Figure 4, can strengthen the light of this element end, penetrate the light of the reflection that is suitable for the adjacent element end.And, by being used in combination, can realize the light ejaculation of suitable luminous output and the reflection of being undertaken by adjacent element with first formation, the result can obtain the excellent light-emitting device of light output.Also have, for the light intensity on each limit, with the region area on this whole piece limit of combining this clamping zone portion and other ones, apart from the distance of end, the back side, for example area S described later, R estimate.For the distance on the 3rd formation, light-emitting zone and each limit, area too.

As realizing that above first formation, the 3rd constitutes and the structure of the two each related mode, there are above-mentioned execution mode 1 and other execution modes or the structure of clamping zone portion described later and extension is set in the light-emitting zone that is arranged at first avris, thus, exist above-mentioned second to constitute.Specifically be, for clamping zone portion, with other parts for example extension compare, the width of the light-emitting zone that above-mentioned first formation is related and the distance on area, rear side end and first limit are little, in the light-emitting zone of first avris, this clamping zone portion and other parts for example extension are compared and are become the part that penetrates high light, have utilized the light emitting element configuration of these characteristics to become to design aptly its size, shape aptly, apart from the structure of the distance on first limit etc.Below, above-mentioned each related structure of mode that constitutes is described.In addition, to being illustrated, but also can be applicable to other limits of element with opposed first limit of adjacent element, the limit different or second limit of non-opposed edge with first limit.And, when having arranged three above elements, exist under the situation of two above adjacent elements, preferably with each opposed edge as first limit.

(area of light-emitting zone)

Except that the length of clamping zone portion and extension, to constitute the area of light-emitting zone of each related avris different with second avris at first avris by making above-mentioned first, thereby can change from the light intensity of end face ejaculation.Particularly, overlook down, make by the end of second electrode on a limit of close element and continue this end after the area R in the zone of the end clamping of second electrode on close this limit, with the ratio R/L of the length L on this limit, the R that locates on first limit ₁/ L ₁Than R at place, second limit ₂/ L ₂Littler.Thus,, can make the light that produces at light-emitting zone until being emitted as the distance of only in element, passing through from the element end face from whole light-emitting zone, at first avris than short at second avris, thereby, can realize the stronger element of light that penetrates from first avris.

(distance of each back gauge light-emitting zone)

Also have, constitute related mode as the above-mentioned the 3rd, by shortening the distance from first limit to light-emitting zone, the light quantity that can make light from light-emitting zone arrive other element end faces of adjacency increases.About to the distance of light-emitting zone, preferably locate about equally on first limit and second limit or first limit nearer, particularly, preferably overlook down this limit when being benchmark with a limit and and its opposed light-emitting zone between regional little.For example, by the area S in the zone of the opposed edge of this true edge and this true edge or the light-emitting zone clamping that disposes than more close this limit of opposed edge, with the ratio S/L of the length L on limit, S at place, first limit ₁/ L ₁With S at place, second limit ₂/ L ₂About equally or the S at first limit place ₁/ L ₁Littler.Thus, can make the decay of the light that penetrates from the end face of first avris and second avris about equally or littler, thereby can increase light quantity.

For example, can make first group of S/L of the opposed edge formation on first limit and this limit, than littler with second group of S/L on a different set of mutual opposed limit, and S/L is equal each other to make the interior limit of each group.Promptly, when second limit is the limit different with the opposed edge on first limit, the S/L of opposed edge that can become first limit and first limit is also about equally element of S/L about equally and in the opposed edge on second limit and second limit, and then, can make the S/L on first limit littler than the S/L on second limit.At this moment, the limit of each group is made as mutual S/L about equally, as the element with two groups of such limits, overlooks down being preferably rectangle.Like this, for the distance of distance light-emitting zone, nearer by being configured such that this group of first limit and opposed edge thereof than the group different with this group, thereby, can make the avris of the different group of the attenuation ratio of the light that penetrates from the end face of first avris and opposed avris thereof littler, thereby can strengthen from the light of end face ejaculation.

For example, in the element of Fig. 1, S/L at first limit 11 and its opposed edge 13 places about equally, and, with the limit 12 of first limit, 11 adjacency and its opposed edge 14 places about equally.Among Fig. 1 with oblique line represent by limit 12 and and its opposed light-emitting zone between the zone, specifically be limit 12 with the opposed edge 14 on this limit or than 14 more close these limits 12, limit and the zone of light-emitting zone 1 clamping of configuration.End at first limit, 11 sides and opposed edge 13 side light-emitting zones 1 thereof is consistent with each limit, does not have the zone between first limit 11 and the light-emitting zone 1, and S/L is 0, and therefore, in this example, the S/L of first group S/L than second group is little.

On the other hand, also can make first group with second group S/L about equally.Thus, light-emitting zone is set to apart from each limit distance about equally, therefore, can become the element that the light intensity that penetrates from the end face of each avris depends on the plan view shape of light-emitting zone easily.And, if adopt the S on first limit ₁/ L ₁S than second limit ₂/ L ₂Littler element is then compared with the two situation about equally, can improve the relative effect of bringing in first limit that makes each element, promptly relative with making second limit situation is compared the effect that luminous output improves.

Below, above-mentioned first related structure of mode that constitutes the related structure with clamping zone portion and extension, above-mentioned each formation is described.

(length of clamping zone portion and extension)

In above-mentioned second structure that constitutes, with opposed first limit of adjacent element on, by increasing the ratio that the clamping zone portion that compares the stronger light of ejaculation in its second electrode or the light-emitting zone, with other parts accounts for first limit, can penetrate opposed edge, be suitable light in the reflection of end of adjacent element at Connection Element.Particularly, as above-mentioned execution mode 1, make clamping zone portion account for second electrode on first limit or the ratio of light-emitting zone, with above-mentioned first width that constitutes related light-emitting zone, compare bigger apart from the distance of end, the back side, other parts that area that each is regional is little.As the shared ratio of clamping zone portion, over half in the length on limit of suiting, and then preferably more than 2/3.Here, the ratio that each one accounts for each limit can be evaluated as: each one in the length L on each limit is along the ratio of the length (A of clamping zone portion, extension B) of this edge direction, and promptly to be [A/L], extension proportion be [(L-A)/L] for [B/L], above-mentioned other ones (non-clamping zone portion) proportion to clamping zone portion proportion.

And, with the comparison on second limit in, second limit particularly be not with the opposed limit of adjacent element, therefore, clamping zone portion on the relatively more different limits and the clamping zone portion on first limit with opposed first limit.The light-emitting zone of second avris has extension, and has on the length direction on limit than the short clamping zone portion of extension or be made of the light-emitting zone of second avris extension.Here, the ratio A/L of the length A of the clamping zone portion of light-emitting zone and the length L on limit, the A on preferred first limit ₁/ L ₁A than second limit ₂/ L ₂Bigger.Thus, the degree of the decay of the light that penetrates from second avris is bigger than the light that penetrates from first avris, can become the light intensity that penetrates from end face at the big element of first avris.Here, element as shown in Figure 1 is such, is made of the length A of the clamping zone portion on second limit under the situation of light-emitting zone of second avris extension ₂Be 0.And then, for the ratio A/B of the length A of clamping zone portion and the length B of extension, the A on preferred first limit ₁/ B ₁A than second limit ₂/ B ₂Bigger.

On the other hand, the length A of clamping zone portion and the ratio A/L of the length L on limit can be formed the A on first limit ₁/ L ₁A with second limit ₂/ L ₂About equally.Under this situation, the width of the clamping zone portion by making first avris is littler than the width of the clamping zone portion of second avris, the distance that the light that produces in clamping zone portion passes through can be shortened relatively in element, thereby the degree of the decay of the light that penetrates from first avris can be reduced.Here, also can adopt following structure: except that the width of second electrode or light-emitting zone, with the rear side end apart from the distance on each limit, promptly the area R by the zone of both clampings compares, and makes first limit littler than second limit.

(the opposed avris on first limit)

The opposed avris on preferred first limit adopts following formation.For the opposed edge on first limit, see to the direction on first limit, relative with the exposed division and first limit of first semiconductor layer of opposed avris, be R at the area of second electrode of establishing this zone _{1 '}, the length of establishing first limit is L _{1 '}The time, R _{1 '}With L _{1 '}Ratio R _{1 '}/ L _{1 '}With above-mentioned R ₁/ L ₁About equally.And second electrode of the opposed avris on first limit has clamping zone portion and extension as first avris, and the length ratio that forms the opposed edge direction of clamping zone portion prolongs minister.Constitute according to these,, penetrate high light, especially also dispose under the situation of other elements preferred at opposed avris even also can suppress the decay of light at the end face of opposed avris.And then element as shown in Figure 1 is such, if make the plan view shape of light-emitting zone identical at the opposed avris of first avris and its, then can make the light intensity that penetrates from the end face of opposed avris identical with first avris.

(second electrode of each avris or each one and configuration thereof)

The clamping zone portion of second electrode be each avris by first semiconductor layer to expose the zone be exposed division etc. and the part of second electrode separation of element internal or opposed avris, promptly, be by exposing the separated part that zone etc. forms and the light-emitting zone of Ge Bian clamping, second electrode also be set at the opposed avris of this separated part.The clamping zone quality award from the ministry choosing of first avris is than being arranged on more close first avris configuration of first electrode that exposes the zone.Thus, as shown in Figure 4, can be with clamping zone portion near the first avris setting, and, can not blocked from the light of the end face of light-emitting zone, and can take out from first avris by first electrode.In order not taken out light from end face by electrode, the semiconductor layer end face of preferred first avris or each avris has the face that exposes that can penetrate light in a part at least with blocking, and then the roughly whole face of preferred end face becomes light emergence face.Particularly, the structure that exposes from the metal of light-proofness preferably, for example structure that exposes from reflectance coating or electrode or the structure that covers by the diaphragm of light transmission etc.When having luminescent layer between second semiconductor layer and first semiconductor layer, the preferred end face of luminescent layer at least exposes.

Light-emitting component is provided with the exposed division of first semiconductor layer with the first region territory that first electrode is set on its part, in all the other zones light-emitting zone is set.Exposed division is a non-luminous region.Therefore, as mentioned above, clamping zone portion and/or extension are configured in first avris or other avris, utilize the first～three above-mentioned formation and the mode thereof, form suitable light emitting element configuration.On first limit, as mentioned above, can make and be suitable light by having clamping zone portion, but also can not have delay portion this moment from the light of its end face.But, as explanation during above-mentioned first and third constitutes, if reduce distance or region area between first avris, then light-emitting zone becomes the zone of narrow zone of width or small size, therefore, the outside connection that is provided with on second electrode on it diminishes with the zone, or is difficult to carry out zone formation.Therefore, solve this problem by delay portion being set with clamping zone portion combination.That is, can expose zone or the first region territory and be arranged on the light-emitting zone of opposite side on each limit, this outside is set connect with the zone in the light-emitting zone of the element inboard that connects by extension or clamping.Thus, can be achieved as follows structure:, improved based on the above-mentioned first and third suitable clamping zone portion that constitutes and account for structure based on the ratio on above-mentioned second limit that constitutes at desirable avris first avris for example.And, in the inboard or opposed avris extension of element light-emitting zone is set by extension, thereby can improves the ratio that light-emitting area accounts for element, also have, owing to realized electric current diffusivity, uniformity, improved therefore preferably have extension based on this uniformity of luminance, efficient.

Wideer by a part that makes above-mentioned clamping zone portion than other partial widths, and increase the area of the part of above-mentioned each regional area (S, R), this part can be connected with the zone as the outside.Like this, clamping zone portion also can adopt has wiring zone that is not connected with the outside and the structure that carries out the outside outside join domain that is connected, and this wiring zone possesses the structure of electric current diffusion or wiring.At first avris, preferably have wiring zone at least, according to component size etc., form non-luminous/the first region territory in the light-emitting zone, this zone and expose zone, clamping zone portion and each zone thereof and extension and its other parts.Here, outside join domain can possess the function in above-mentioned wiring zone, also can be arranged on extension.At this moment, outside join domain also can constitute the clamping zone portion with the adjacent side of the limit adjacency of extension.At non-luminous region, the exposing the zone, be arranged on the first region territory on its part of first semiconductor layer that mainly comprises first conductivity type that has exposed above-mentioned lower layer side, in addition, expose at the substrate that has exposed the semiconductor layer on the substrate on second semiconductor layer of zone, second conductivity type, also can comprise non-electric current injection portion, the electric current blocking portion in the non-formation zone etc. of second electrode.

Also can expose light-emitting zone or its each one that the zone disposes each limit across the semiconductor layer that does not form electrode, shown in above-mentioned execution mode 1, by with the end face on each limit semiconductor layer end face, preferably make the distance of element end face and light-emitting zone end face, promptly should zone (area S described later) be 0 as light-emitting zone.This element peripheral part expose the zone as described later shown in each execution mode, form by separating at its peripheral part, therefore, can prevent the leakage of element.Light-emitting zone during as the element end face, is being formed by at light-emitting zone element being separated.

And, form exposing in the zone of first electrode in the non-luminous region such as zone in exposing of semiconductor layer, if form light-emitting zone according to the mode that its periphery is surrounded, then can be to the light-emitting zone that constitutes its peripheral part injection current and make it luminous effectively.Especially, be that p type layer, first semiconductor layer are under the situation of n type layer at second semiconductor layer, preferably can extract electric current effectively from the entire circumference of first electrode from second electrode.

Below, utilize Fig. 5～Figure 11, to light-emitting zone of the present invention other the example each related execution mode describe.In Fig. 5～Figure 11, the parts identical with Fig. 1～3 are represented with same-sign.In arbitrary example, all be that two elements of same configuration are installed on the supporting substrate according to the relative mode flip-chip in first limit.And, omitted the conductor wiring of supporting substrate, but can should be provided with each electrode pair of element.

(execution mode 2)

Light-emitting component shown in Fig. 5 A that uses in the light-emitting device of present embodiment 2, employing have the light-emitting zone of element internal and the structure of the light-emitting zone outside the element.Compare with execution mode 1, the major part of the light-emitting zone in the element outside is separately positioned on first limit and opposed avris thereof, first limit in abutting connection with avris, the extension of first limit and opposed edge thereof is configured in the both ends on first limit, the part on this limit constitutes extension, and then makes its extension and be provided with clamping zone portion.And the light-emitting component shown in Fig. 5 A is the structure of line symmetry, and its center line is with to be provided with first limit or its adjacent side that occupy the length of side second electrode over half parallel.In addition, second electrode is provided with outside join domain at the adjacency avris, extends to these element inboards, and the wiring zone narrower than its width is set, and has constituted the separated part of light-emitting zone of first limit and opposed edge thereof and this separated part of adjacent side.Second electrode has extension in the end than first limit near the inboard, is connected with above-mentioned inboard light-emitting zone, and extension and clamping zone portion at both ends are provided with outside join domain.According to above structure, that is, width is wide by having, the light-emitting zone of large-area inboard, can improve the light in the front that is fetched to the axle shape vertical with semiconductor layer surface.And the light-emitting zone in the outside of, small size narrower than the light-emitting zone width of inboard by having realizes that suitable element is luminous in abutting connection with the end face of configuration.

In the light-emitting device shown in Fig. 5 A, second electrode 3 of each semiconductor light-emitting elements also has the 8a of clamping zone portion, 8b and extension 7a, 7b in second limit, 12 sides with first limit, 11 adjacency.On the edge direction on second limit 12, the length A of the 8a of clamping zone portion _8aLength A with the 8b of clamping zone portion _8bSum is substantially equal to the length B of extension 7a _7aLength B with extension 7b _7bSum.And the 6a of clamping zone portion of first limit, 11 sides and the length of 6b are longer than the length of the 8a of clamping zone portion of second limit, 12 sides and 8b.Here, the light-emitting component shown in Fig. 5 A is essentially square, therefore, and the 6a of clamping zone portion of first limit, 11 sides and the length A of 6b ₁Length L with first limit 11 ₁Ratio A ₁/ L ₁, than the 8a of clamping zone portion of second limit, 12 sides and the length A of 8b ₂Length L with second limit 12 ₂Ratio A ₂/ L ₂Bigger.And, for first limit 11 and second limit 12, see to the direction of the opposed edge on each limit, relative with the first semiconductor layer exposed division 2 and each opposed edge of each avris, in Fig. 5 B, represent the area R of second electrode 3 in this zone respectively ₁, R ₂The area in the zone of representing with the oblique line of bottom right in the element in left side is R ₁, the area in the zone of representing with upper right oblique line in the element on right side is R ₂, R ₁, R ₂Account for about 21%, about 49% of whole element area respectively.Here, the element shown in Fig. 5 B is overlooked down and is essentially square, therefore, and R ₁/ L ₁Compare R ₂/ L ₂Littler.Thus, can make the light intensity that penetrates from the end face of first avris bigger than second avris.Be essentially square and be meant that foursquare degree reaches the degree that can obtain effect of the present invention and gets final product.And the opposed avris on second limit 12 also is and the same shape of second limit, 12 sides.

(execution mode 3)

Light-emitting component shown in Fig. 6 A that uses in the light-emitting device of present embodiment 3 is compared with execution mode 2, the second inboard electrode width is wideer, area is bigger, relative therewith, reduce as width, above-mentioned each regional area of the clamping zone portion of the part of second electrode in the outside.Thus, the outside join domain of first electrode is arranged on the extension at the both ends of first limit that is connected with each one of adjacent side and opposed edge thereof, and the clamping zone portion of the inboard of first limit and opposed edge thereof and extension become the wiring zone.Thus, the light-emitting zone in the outside can improve the brightness that end face penetrates light, and the light-emitting zone in the inboard can improve front face brightness.

Light-emitting device shown in Fig. 6 A is compared with the light-emitting device shown in Fig. 5 A, second electrode 3 of second limit, 12 sides of each semiconductor light-emitting elements and the shape difference of light-emitting zone 1.In the semiconductor light-emitting elements of Fig. 6 A, the 8a of clamping zone portion of second limit, 12 sides and the length of 8b are longer than extension 7a and 7b, and, the 6a of clamping zone portion of first limit, 11 sides and the length A of 6b ₁With the 8a of clamping zone portion of second limit, 12 sides and the length A of 8b ₂About equally, that is, and the A on first limit 11 ₁/ L ₁A with second limit 12 ₂/ L ₂About equally.But, in first limit, 11 sides and second limit, 12 sides, the width difference of the clamping zone portion of each avris, the 6a of clamping zone portion of first limit, 11 sides and the width of 6b are littler than the 8a of clamping zone portion and the 8b of second limit, 12 sides.And, for first limit 11 and second limit 12, see to the direction of the opposed edge on each limit, relative with the first semiconductor layer exposed division 2 and each opposed edge of each avris, in Fig. 6 B, represent the area R of second electrode 3 in this zone respectively ₁, R ₂The area in the zone of representing with the oblique line of bottom right in the element in left side is R ₁, the area in the zone of representing with upper right oblique line in the element on right side is R ₂, R ₁, R ₂Account for about 20%, about 33% of whole element area respectively.Here, the element shown in Fig. 6 B is overlooked down and is essentially square, therefore, and R ₁/ L ₁Compare R ₂/ L ₂Littler.Thus, can realize that the light that penetrates from end face is at first avris element stronger than second avris.

(execution mode 4)

Light-emitting component shown in Fig. 7 A that uses in the light-emitting device of present embodiment 4 is the structure that each limit has the light-emitting zone of clamping zone portion and extension respectively, compare with execution mode 2,3, inboard light-emitting zone is set to the interconnective extension in the limit of adjacency, this extension is the width difference on opposed direction, the wide light-emitting zone of width be arranged on mutually opposed two in abutting connection with avris.And first electrode is disposed at each discretely in abutting connection with avris on the opposed direction of adjacent side in execution mode 2,3, but in this embodiment, become the structure that separates on the opposed direction on first limit.And, on first limit and opposed avris, become the different structure of this clamping zone portion width on edge direction, in the wide end side of width outside join domain is set, and extension is different with execution mode 2,3, do not have inboard extension, only be provided with the extension of end side.In this light-emitting component, at the adjacency avris clamping zone portion is set, by this clamping zone portion, first electrode is separated with the limit, therefore, compare with execution mode 2,3,, become in abutting connection with the little structure of difference of the distribution of the luminous intensity of avris, first limit and opposed avris thereof from the luminous enhancing of the end face on this limit.

The light-emitting zone that light-emitting device shown in Fig. 7 A is set to each semiconductor light-emitting elements surround first electrode 4 expose zone 2 and surface thereof around.And, for first limit 11 and second limit 12, see to the direction of the opposed edge on each limit, relative with the first semiconductor layer exposed division 2 and each opposed edge of each avris, in Fig. 7 B, represent the area R of second electrode 3 in this zone respectively ₁, R ₂The area in the zone of representing with the oblique line of bottom right in the element in left side is R ₁, the area in the zone of representing with upper right oblique line in the element on right side is R ₂, R ₁, R ₂Account for about 22%, about 35% of whole element area respectively.Here, the element shown in Fig. 7 B is overlooked down and is essentially square, therefore, and R ₁/ L ₁Compare R ₂/ L ₂Littler.Thus, from whole light-emitting zone, can make the degree of decay of the light that penetrates from first avris littler than second avris.And, the R/L of the opposed edge on first limit 11 and second limit 12, at the R/L on first limit 11 and second limit 12 about equally.

(execution mode 5)

Light-emitting component shown in Fig. 8 A that uses in the light-emitting device of present embodiment 5 is compared with execution mode 4, the outside join domain of second electrode is arranged on inboard light-emitting zone, second electrode width in the outside of first limit and opposed edge thereof narrows down, become the wiring zone, dispose clamping zone portion, the extension of even width, at the adjacency avris, second electrode of this inboard becomes the structure that constitutes extension.And, in whole element, become second electrode of the peripheral part that is provided with same widths and the structure of second electrode of inboard.Clamping zone portion by even width, on first limit and second avris to form the high end face of uniformity luminous, on the other hand, on the adjacent side, because extension is a same widths on opposed direction, therefore, the luminous reduction of this end face, compare with execution mode 4, the luminous difference between first limit and opposed edge thereof and the adjacent side increases, but can realize the element that uniformity is higher than execution mode 2,3.

The above-mentioned S/L of expression about equally example on all limits among Fig. 8 A.In the light-emitting device of Fig. 8 A, each semiconductor light-emitting elements is provided with the exposed division 2 that exposed division 2, the first electrodes 4 are formed on element internal in the periphery and the inside of element.Among Fig. 8 A, by first limit 11, with the opposed edge on this limit or than this opposed edge near limit 11 and zone (this area S of light-emitting zone 1 clamping of configuration ₁), the oblique line with the bottom right in the element in left side represents, by second limit 12, with the opposed edge on this limit or than this opposed edge near limit 12 and zone (this area S of light-emitting zone 1 clamping of configuration ₂), in the element on right side, represent with upper right oblique line.Element shown in Fig. 8 A is essentially square, shown in Fig. 8 A, and the S on first limit 11 ₁/ L ₁S with second limit 12 ₂/ L ₂About equally.And, first limit 11 and second limit 12 and separately opposed edge S/L about equally, therefore, the S/L on all limits is about equally.Thus, obtain the effect that the shape of light-emitting zone is produced in each avris difference easily.And, for first limit 11 and second limit 12, see to the direction of the opposed edge on each limit, relative with the first semiconductor layer exposed division 2 and each opposed edge of each avris, in Fig. 8 B, represent the area R of second electrode 3 in this zone respectively ₁, R ₂The area in the zone of representing with the oblique line of the right side under tiltedly in the element in left side is R ₁, the area in the zone of representing with upper right oblique line in the element on right side is R ₂, R ₁, R ₂Account for about 20%, about 45% of whole element area respectively.Here, the element shown in Fig. 8 B is overlooked down and is essentially square, therefore, and R ₁/ L ₁Compare R ₂/ L ₂Littler.

(execution mode 6)

The light-emitting component shown in Figure 9 that uses in the light-emitting device of present embodiment 6 is compared with execution mode 1～5, in the adjacent side is the asymmetrical structure in the left and right sides, dispose the clamping zone portion and the extension of second electrode in a side first limit 11 sides, dispose first electrode in its opposed edge 13 sides, this first electrode is to have the wiring zone at both ends and the structure of the outside join domain of inboard.Same with execution mode 2～5, at adjacency avris configuration clamping zone portion and extension, this extension interconnects and is configured in side's end side of each adjacent side, constitutes each one of first avris.In this element, compare with execution mode 1～5, because first limit and opposed edge difference, therefore, its luminous difference is big, on the adjacent side at the opposing party's first limit and its two ends, the difference of clamping zone portion and extension proportion on each limit reduces, equally, above-mentioned each regional area S, R also reduces in the difference of the value (S/L, R/L) on each limit, also can obtain to export the little light-emitting device of difference even adjacent element is configured in each avris.

The above-mentioned S/L value of expression is three kinds a example among Fig. 9.It is square that each semiconductor light-emitting elements of light-emitting device shown in Figure 9 is overlooked down essence.Among Fig. 9, will be by the opposed edge 13 on first limit 11, with first limit 11 or than the zone of light-emitting zone 1 clamping of limit 11 more close limits 13 configurations, in the element in left side, represent with right oblique line under tiltedly, will be by second limit 12, with the opposed edge on this limit or than the more close limit 12 of this opposed edge and the zone of light-emitting zone 1 clamping of configuration, in the element on right side, represent with right oblique line on oblique.Such zone does not exist in first limit, 11 sides, and S/L is in first limit, 11 place's minimums, and is little on second limit 12 and opposed edge place second thereof, and, the opposed edge 13 place's maximums on first limit.Such element disposes according to first limit, the 11 mutual relative modes of S/L minimum as shown in Figure 9.And, also can make the clamping zone portion of limit 12 sides longer, and according to limit 12 relative modes are disposed, such structure is especially preferred under the situation of arranging the element more than three than extension.

(execution mode 7)

In the example of Figure 10 A, light-emitting component that uses in the light-emitting device of present embodiment 7 and execution mode 1～6 are in a ratio of elongate in shape, same with execution mode 2,3, element, first electrode that separates on the opposed direction of element than the adjacent side of length direction is configured in each in abutting connection with avris, the second inboard electrode constitutes the extension of first limit and opposed edge thereof, becomes public extension equally with execution mode 5.And clamping zone portion and execution mode 1 are same, are arranged on first limit and opposed avris thereof, compare with the adjacency avris, can become the luminous strong element of end face.In the example of Figure 11 A, same with execution mode 6, difference is to be elongate in shape on the opposed direction of asymmetric direction, adjacent side, be in abutting connection with the mutual different structure of avris, same with execution mode 4, on the edge direction of first limit and opposed edge thereof, the different clamping zone portion of width is set, become the structure that outside join domain is set in the wide clamping zone portion of width.By forming first limit on this length limit, can widen and the opposed limit of adjacent element, realize the suitable light reflection of being undertaken by adjacent element.

And then, shown in Figure 10 A and Figure 11 A, when employing is overlooked down for rectangular semiconductor light-emitting elements, longer as if making than second limit with opposed first limit of other elements, then can penetrate stronger light from first avris, and, can expand area with the adjacent elements opposing end faces, therefore, can reflect the back in opposing end faces and take out stronger light, thus preferred.And, shown in Figure 11 A, the clamping zone portion 6 of first limit, 11 sides is under the asymmetrical situation when the vertical bisecting line with limit 11 is spool, if dispose behind the element Rotate 180 degree with a side, then can make the weak end face of luminous intensity relative, thereby can relax the deviation of luminescence distribution with strong end face.

And, in the element of Figure 10 A and Figure 11 A, for first limit 11 and second limit 12, see to the direction of the opposed edge on each limit, relative with the first semiconductor layer exposed division 2 and each opposed edge of each avris, in Figure 10 B, Figure 11 B, represent the area R of second electrode 3 in this zone respectively ₁, R ₂The area in the zone of representing with the oblique line of the right side under tiltedly in the element in left side is R ₁, the area in the zone of representing with the oblique line of the right side on tiltedly in the element on right side is R ₂, each zone accounts for the ratio of whole element area, R in Figure 10 B ₁About 51%, R ₂About 63%, R in Figure 11 B ₁About 51%, R ₂About 58%.Here, the length ratio on the length on first limit 11 and second limit 12 equates in the element of the element of Figure 10 B and Figure 11 B, is about 2: 1, therefore, in the element of Figure 10 B, R ₁/ L ₁About 26, R ₂/ L ₂About 63, in the element of Figure 11 B, R ₁/ L ₁About 26, R ₂/ L ₂About 58, all be R ₁/ L ₁Compare R ₂/ L ₂Littler.

(other formations of the present invention and mode)

Below, each formation related to the respective embodiments described above of the present invention describes.

(second semiconductor layer, first semiconductor layer)

As first and second semiconductor layers, can enumerate and use GaN or other semiconductor structures.When covering semiconductor light-emitting elements with fluorescent material, the suitable nitride-based semiconductor (In that enumerates the light that can send the short wavelength that can effectively encourage this fluorescent material _XAl _YGa _1-X-YN, 0≤X, 0≤Y, X+Y≤1).As the structure of semiconductor layer, can enumerate have MIS knot, the structure of homogeneity (homo) structure, heterogeneous (herero) structure or two heterogeneous formations of PIN knot or pn knot etc.Can recently carry out various selections according to material or its mixed crystal of semiconductor layer to emission wavelength.And, also can adopt following structure: between second semiconductor layer and first semiconductor layer of light-emitting zone, have the single quantum well structure or the multiple quantum trap that make the semiconductor active layer form the film of generation quantum effect and construct.Under the situation of having used nitride-based semiconductor, the growth of semiconductor layer for production forms the good nitride-based semiconductor of crystallinity excellently, is preferably used sapphire substrate with the suitable material that uses sapphire, spinelle, SiC, Si, ZnO etc. of substrate.

And, the semiconductor layer of first conductivity type exposes after removing the part of semiconductor layer of second conductivity type, the luminous area decreases of being exposed less than the semiconductor layer of first conductivity type of contributing to light-emitting component, make the regional of semiconductor layer of second conductivity increase relatively, thereby the light that can improve light-emitting component take out efficient.And, expose at first avris as if the luminescent layer between the semiconductor layer that is arranged on first and second conductive layer, then can suppress from the decay of the light of first avris ejaculation, thereby preferred.

(second electrode, first electrode)

Second electrode is typically and is set to the electric current diffusion electrode on the semiconductor layer of second conductivity type, and this electric current diffusion electrode is used to make whole to the semiconductor layer of second conductivity type of the current expansion of putting into light-emitting component.Second electrode preferably is arranged on roughly whole of semiconductor layer of second conductivity type.Especially, be under the situation of p type layer at second conductive-type semiconductor layer, electric current is difficult for direction expansion in face, therefore, preferably adopts such structure.The base electrode of the second conductive layer side that is connected with conductive components such as pads also can be set on second electrode.

The formation of second electrode and first electrode can make the semiconductor layer of first conductivity type utilize vapour deposition method or sputtering method to carry out after exposing by methods such as etchings.In the present embodiment, preferred second electrode is the material of the light of self-emission device in the future to the light-transmitting substrate direction reflection of light-emitting component.In addition, can on whole of p type semiconductor layer, form the metallic film of oxide conductive film as the ITO composite oxides of tin (Sn) (indium (In) with), ZnO, Ni/Au etc. as optically transparent electrode.And, even second electrode is also can make the thickness of the luminous degree of element form in the narrow part of width as clamping zone portion, for example, select the thickness about 100nm～1 μ m.

(semiconductor light-emitting elements)

As semiconductor light-emitting elements of the present invention, between the element that is disposed at light-emitting device at least and adjoins each other, has opposed first limit, for example, adopt as on one side with except that this limit being the element that a part has curve the semicircle etc., but be suitably polygonal, and then preferably have first limit and these both sides of its opposed edge, more preferably have first while being adjacent this three limit, and then preferably those have the polygonal on four limits, also can adopt quadrangle, for example parallelogram, trapezoidal etc.As preferred quadrangle, particularly, utilize that to overlook down be the rectangle of square or rectangular etc.First limit relative with other elements preferably compared with other limits especially adjacent side, and limit (square) or long limit (rectangle) for same length thus, can increase the end face that can reflect from the light of adjacent element, obtain effect of the present invention easily.And, between adjacent element, also can adopt the different mode of the length on each first limit, have only the opposed mode of a part on limit etc., but preferred by adopt with equal length and with the whole piece limit opposed like this over against mode, thereby obtain the suitable reflection undertaken by adjacent element.And, also can make first limit of adjacent element tiltedly opposed, but by the light reflection to the direction that tilts, its luminous enhancing cause the directive property variation sometimes, therefore preferred almost parallel in cross one another direction updip.

Size as light-emitting component of the present invention, because desirable second electrode and the light-emitting zone with clamping zone portion, extension etc. or above-mentioned each zone is set on first limit, therefore, need guarantee the area of its structure portion, specifically be to be made as more than the 300 μ m.And, if will be on first limit and opposed avris or adjacent side, the for example above-mentioned extension of structure, clamping zone portion, the first region territory or the said elements outside and the second inboard electrode of desirable second electrode and light-emitting zone also are set, then need bigger area.Specifically be preferably to be made as more than the 600 μ m, the upper limit is selected as about several mm usually.By reducing the distance between a plurality of semiconductor light-emitting elements, can between opposing end faces, reflect effectively, specifically be preferably below 200 μ m.And, also can be made as below 20% of length on following or first limit of the length on first limit.And lower limit is realized by the installation accuracy of element, for example can be made as more than the tens μ m.

Use substrate as growth,, also can take out light with substrate from growth by using the light-transmitting substrate of sapphire etc., and, grow by attenuates such as grinding and to use the thickness of substrate, thereby take out light from the growth of light-emitting component with real estate easily.At this moment, growth is as thin as about a few μ m usually with the thickness of semiconductor layer stacked on the substrate, therefore, preferred growth is with the thickness more than the residual at least semiconductor layer of substrate, for example can be made as about 10 μ m～500 μ m and then in the scope about 50 μ m～200 μ m.

(supporting substrate)

As the supporting substrate of present embodiment, can utilize face with the electrode contraposition of light-emitting component to be implemented conductor wiring, be used for parts that the light-emitting component that flip-chip is installed is fixed and supported.And then, make supporting substrate and lead-in wire during electrode conduction, from opposed of light-emitting component to the face of lead-in wire electrode contraposition, implement conductor wiring by conductive component.The material coefficient of thermal expansion coefficient of preferred supporting substrate and light-emitting component for example at the preferred aluminium nitride of nitride semiconductor luminescent element, thus, can relax the influence of the thermal stress that produces between supporting substrate and the light-emitting component about equally.Perhaps, can adopt function and the cheap silicon that possesses electrostatic protection element.In addition, also can utilize the installation matrix etc. of the window portion that is positioned at the printed base plate that is provided with the circuit that connects a plurality of elements, light-emitting device, recess etc.

(conductor wiring)

Adopt Au or as the Al of argenteous metal etc. as the metal of the material of conductor wiring.By adopting the high silvery white metal of reflectivity, the light of self-emission device is to the direction reflection of an opposite side with supporting substrate in the future, and the light that improves light-emitting device takes out efficient, thereby preferred.Here, consider preferably that as the metal of the material of conductor wiring the good degree of the cementability that metal is mutual, so-called wetability wait and select.For example, via the Au pad, when by ultrasonic wave tube core welding (die bond) electrode of the led chip that contains Au being engaged, conductor wiring is the alloy that contains Au or Au.

The pattern of conductor wiring 10a～10c that the light-emitting device of Fig. 3 presentation graphs 2A is related.On Fig. 2 A and supporting substrate 9 shown in Figure 3, the first conductor wiring 10a is arranged on second electrode, the 3 opposed positions with a side light-emitting component, and is same, and the second conductor wiring 10b is arranged on second electrode, the 4 opposed zones with the opposing party's light-emitting component.And then, the 3rd conductor wiring 10c that first electrode 4 that is provided with the light-emitting component that makes a side and second electrode 3 of the opposing party's light-emitting component are electrically connected and make two elements to be connected in series.Here, in each element, the end of semiconductor layer is exposed and can be penetrated light from light-proofness parts such as electrodes, with the surface of this opposed supporting substrate in end, extend and be provided with the second conductor wiring 10b that engages with first electrode 4 of each element and the part of the 3rd conductor wiring 10c.Thus, as shown in Figure 4, overlook down zone between first and second electrode, the light that leaks is therefrom reflected by conductor wiring, especially, shown in Fig. 2 A, in the element outer edge,, can further improve the light beam of light-emitting device by extending to the wire portion in the element outside.Especially, as the material of supporting substrate, when using aluminium nitride etc. to absorb the material of light of self-emission device easily, can obtain higher effect.And preferred conductor wiring is provided with according to the mode that covers between two elements.

And, the pattern of the conductor wiring that is connected with first electrode 4 is shown in Fig. 2 A, be set to consistent with the pattern of second electrode 3, particularly, preferably constitute: in second electrode of the first electrode adjacency of overlooking main down and element inboard, second electrode overlaps with this conductor wiring, and each end is unanimous on the whole.And when element that the end face that uses at luminescent layer between the exposed division of first semiconductor layer and second semiconductor layer that is provided with second electrode exposes, the preferred cloth line electrode time is arranged under the end face exposed division of luminescent layer overlooking at least.Thus, as shown in Figure 4, by extending the wiring portion that is provided with, can reflect by the conductor wiring that is connected with first electrode 4 from the light that leaks between second electrode 3 and first electrode 4, and can increase the area of the conductor wiring that is connected with second electrode 3 from above-mentioned first electrode tip.At this moment, preferably under overlooking, more this conductor wiring is set with extending to second electrode direction outside of adjacency than first electrode tip.

In addition, among Fig. 2 A, will with the conductor wiring of the corresponding setting of semiconductor layer exposed portions serve of each element as the conductor wiring that is connected with first electrode, but also can be used as the conductor wiring that is connected with second electrode.Element as shown in Figure 1 is such, the area of first electrode than the little situation of second electrode under, if make the conductor wiring that is connected with second electrode extend to the semiconductor layer exposed portions serve, then the area of the conductor wiring that is connected with first electrode reduces, and needs higher precision in electrode and conductor wiring, and, as shown in Figure 4, owing to have a lot of light to arrive the conductor wiring of first electrode from light-emitting zone end outward direction, therefore, preferably adopt the pattern shown in Fig. 2 A.

(light-emitting device)

In the light-emitting device of present embodiment, a plurality of semiconductor light-emitting elements are installed on supporting substrate, and it is relative that each element is configured to mutual almost parallel ground, first limit.Thus, can between a plurality of element opposing end faces, reflect effectively, thereby the light that can improve light-emitting device takes out efficient.And the light-emitting device shown in Fig. 2 A is connected in series two light-emitting components, but also can be connected in parallel.If be connected in parallel, then to compare with situation about being connected in series, conductor wiring is simplified, and can improve thermal diffusivity.In the light-emitting device of the present invention, can adopt with the electrode forming surface side each element to be the light-emitting area side, to be the face up installation or the flip-chip installation of installed surface side with its opposed faces side.Especially preferably adopt flip-chip to install, by adopting the flip-chip installation of taking out light from growth with substrate-side, installation is compared with facing up, the light that is reflected in luminous above the light-emitting zone of installing of facing up is big from the ratio of the light that the end face of substrate and element penetrates, and can utilize the reflection based on above-mentioned adjacent element aptly.

In each of the above-described embodiment, represented to dispose the situation of the identical a plurality of semiconductor light-emitting elements of the shape of light-emitting zone.Thus, can make the part of light intensity same degree of ejaculation relative, and, because the length on first limit is identical, therefore between opposing end faces, can reflect effectively.On the other hand, but the also shape of alignment arrangements second electrode and different light-emitting components such as size of component, under this situation too the relative mode in almost parallel ground, first limit according to each element be configured to the row shape.

In the present embodiment,, can utilize the metal material that is called pad as with the electrode of semiconductor light-emitting elements and the articulate conductive component of conductor wiring of supporting substrate.The gap that produces between light-emitting component of being installed and light-emitting component can be by the resin bed sealing of light transmission.Material as resin bed can be enumerated for example silicones or epoxy resin etc.And, preferably continuous, preferably optically continuous to the resin bed that seals between the element according to the mode of crossing between the element.This be because: if the interface of resin bed and miscellaneous part is between element, then the light from a side element end face ejaculation can be refracted at the interface of resin bed or reflect, and is difficult to arrive the opposing party's element end face of adjacency.And, also can be between to element and the resin bed that seals of the upper surface of element in contain fluorophor, as the wavelength conversion parts.The wavelength conversion parts absorb at least a portion from the light of this light-emitting component, contain the fluorophor that sends the light with different wavelength.

(embodiment 1)

The related light-emitting device of expression present embodiment among Figure 12 A.The related light-emitting device 201 of present embodiment has been installed the semiconductor light-emitting elements of two same configuration with row shape flip-chip by pad on same supporting substrate 29.Each element is connected with the conductor wiring 210a～210c on supporting substrate 29 surfaces in the relative mode in 211 mutual almost parallel ground, first limit.At this moment, shown in Figure 12 A, the outside join domain 215 of second electrode of an element and the outside join domain 216 of first electrode are connected with different conductor wiring.

The related light-emitting component of present embodiment is that each limit is about 1mm and overlooks down and is essentially foursquare element, on the light-transmitting substrate 220 that semiconductor growth layer is used, light-emitting zone 21 with the lit-par-lit structure that comprises n type semiconductor layer and p type semiconductor layer, on p N-type semiconductor N laminar surface, be formed with p electrode 23, be formed with n electrode 24 as first electrode on the surface of exposing zone 22 that comprises the n type semiconductor layer of exposing from the p type semiconductor layer as second electrode.P electrode 23 has the 26a of clamping zone portion and 26b and extension 25 in first limit of element, 211 sides, for for the length of the edge direction on first limit 211, each about 330 μ m of 26a of clamping zone portion and 26b amount to about 660 μ m, extension 25 about 244 μ m, the length of 26a of clamping zone portion and 26b is longer than extension 25.And, shown in Figure 12 B, in the element on right side, the R that represents with right oblique line on tiltedly ₂Equate with the area of light-emitting zone integral body, therefore, the R that in the element in left side, represents with right oblique line under tiltedly ₁One side compares R ₂Littler.Particularly, the R/L of first limit 211 and opposed edge 213 thereof is respectively about 0.29mm ²/ mm, the R/L of second limit 212 and opposed edge 214 thereof is respectively about 0.41mm ²/ mm.

On the other hand, with second limit, 212 sides of first limit, 211 adjacency, only disposed extension 27.And, about by the area S in the zone of the opposed edge on a limit and this limit or the light-emitting zone clamping that disposes than more close this limit of opposed edge, with the ratio S/L of the length L on this limit, first limit 211 and opposed edge 213 thereof are respectively about 0.12mm ²/ mm, second limit 212 and opposed edge 214 thereof are respectively about 0.24mm ²/ mm, first limit 211 and opposed edge 213 these groups thereof are littler than second limit 212 and opposed edge 214 these groups thereof, that is and, light-emitting zone 21 is nearer than second limit, 212 these groups apart from first limit, 211 these groups.Each semiconductor layer of present embodiment and the plan view shape of electrode are that the square center with element is axle 180 degree rotation symmetries, are to be the line symmetry of symmetry axis with the center line parallel with first limit or second limit.And the distance between two elements is about 100 μ m.

The light-emitting component of present embodiment has In _0.3Ca _0.7The N semiconductor utilizes the nitride semiconductor luminescent element of dominant wavelength for 455nm as active layer.Light-emitting component can form by form nitride-based semiconductor with mocvd method on sapphire substrate, on sapphire substrate, across separator stack gradually the n type nitride semiconductor layer that injected Si, with as the GaN layer of barrier layer and as the InGaN of trap layer be the multiple quantum trap structure of a group and stacked multilayer active layer, injected the p type nitride semiconductor layer of Mg.

The light-emitting component of present embodiment is removed the part of p type nitride semiconductor layer, active layer and n type nitride semiconductor layer by etching, the surface of n type nitride semiconductor layer is exposed, each surface of p type nitride semiconductor layer and n type nitride semiconductor layer is exposed in the same one side side of nitride-based semiconductor.And the element outer peripheral portion is removed each semiconductor layer, has exposed the surface of light-transmitting substrate.Being provided with Ni, Ag, Ti, Pt on roughly whole of p type nitride semiconductor layer surface is the p electrode 23 of material.Flow through the current expansion of p electrode 23 in the wide region of p type contact layer by adopting such electrode, making, thereby can improve the luminous efficiency of semiconductor light-emitting elements.And, be reflexive electrode by making the p electrode, can make the light of self-emission device to be penetrated from the sapphire substrate side by 23 reflections of p electrode, the light that can improve the light-emitting component of installing from flip-chip takes out efficient.And then on p electrode 23 surfaces, being provided with Au, Rh, Pt, Ni is the p side group seat electrode of material, and on the surface of n type nitride semiconductor layer 22, being provided with Al-Si-Cu alloy, W, Pt, Au, Ni is the n electrode 24 of material.Here, making p side group seat electrode and n electrode is same material, by forming simultaneously, can reduce the process number that is used to form electrode.And then, according to the mode on the surface that covers each electrode and semiconductor layer, formed the diaphragm of the insulating properties that constitutes by Si oxide.Diaphragm has peristome at the pad bonding station of p electrode and n electrode.

Shown in Figure 12 A, the supporting substrate 29 that uses in the present embodiment is implemented the conductor wiring 210a～210c as material with Au on the plate of aluminium nitride, and the p electrode 23 of light-emitting component and n electrode 24 sides are engaged by the Au pad.And then the area in p electrode conductor wiring and light-emitting component 23 opposed zones is than big with the area in n electrode 24 opposed zones.And two elements have been connected in series in the light-emitting component of present embodiment.In the conductor wiring with the area in the opposed zone of positive electrode of light-emitting component than big with the opposed zone of the negative electrode of light-emitting component, the quantity of the pad of mounting is also many.Be provided with in the conductor wiring shown in Figure 12 A: the first conductor wiring 210a corresponding with the p electrode 23 of a side light-emitting component, with the corresponding second conductor wiring 210b of the n electrode 24 of the opposing party's light-emitting component, the 3rd conductor wiring 210c that makes n electrode 24 and the p electrode 23 of the opposing party's element of a side element be electrically connected and make two elements to be connected in series.And according to the mode of covering luminous element, silk screen printing has that to comprise YAG be that the silicones of fluorophor is as the wavelength conversion parts.The upper surface and the side of wavelength conversion parts covering luminous element also are filled between two elements.Supporting substrate is equipped on the housing, is connected with outer electrode by conducting wire, becomes light-emitting device thus.

Here, as a comparative example 1, as shown in figure 13, make light-emitting device similarly to Example 1 except that second limit, the 212 mutual relative modes according to semiconductor light-emitting elements dispose.For the light beam of the related light-emitting device of embodiment 1 and comparative example 1, respectively at electric current under the situation of about 700mA, be 228.21m among the embodiment 1, be 220.71m in the comparative example 1, by the light-emitting device of employing embodiment 1, light beam improves 34% approximately.And, in luminous intensity distributes, luminous intensity between the opposing end faces of light-emitting component is stronger than comparative example 1 in embodiment 1, by adopting the light-emitting device of present embodiment, can be between the element of adjacency reflect the light that penetrates from the element end face effectively, thereby can improve the light beam of light-emitting device.

(embodiment 2)

Figure 14 is the diagrammatic top view of the related semiconductor light-emitting elements of expression embodiment 2, and Figure 15 A is the diagrammatic top view of the upper surface outward appearance of the related light-emitting device of expression embodiment 2.The related light-emitting device 301 of present embodiment has been installed the semiconductor light-emitting elements of two same configuration with row shape flip-chip on the conductor wiring 310a～310c of same supporting substrate 39, the shape of light-emitting zone of comparing the semiconductor light-emitting elements of being installed with the light-emitting device of embodiment 1 is different.And the part that is connected with the negative electrode of conductor wiring 310a～310c extends to the opposed position of institute, luminescent layer end between the positive and negative electrode of light-emitting component and is provided with, and the end of such conductor wiring is roughly consistent with the end of n electrode 34 sides of p electrode 33.And shown in Figure 15 A, the outside join domain 315 of second electrode of an element and the outside join domain 316 of first electrode are connected with different conductor wiring.

The light-emitting component of present embodiment shown in Figure 14 is that each limit is about 1mm and overlooks down and is essentially foursquare element, on the light-transmitting substrate 320 that semiconductor growth layer is used, light-emitting zone 31 with the lit-par-lit structure that comprises n type semiconductor layer and p type semiconductor layer, on p N-type semiconductor N laminar surface, be formed with p electrode 33, be formed with n electrode 34 as first electrode on the surface of exposing zone 32 that comprises the n type semiconductor layer of exposing from the p type semiconductor layer as second electrode.P electrode 33 has clamping zone portion 36 and extension 35a and 35b in first limit of element, 311 sides, for for the length of the edge direction on first limit 311, the 36 about 704 μ m of clamping zone portion, each about 111 μ m of extension 35a and 35b amount to about 222 μ m, and the length of clamping zone portion 36 is longer than extension 35a and 35b.And light-emitting zone 31 has peristome, and regional 32 surfaces of exposing of exposing in peristome are provided with n electrode 34.

On the other hand, with second limit, 312 sides of first limit, 311 adjacency, except that extension 37a～37d, also disposed the 38a～38c of clamping zone portion.On the edge direction on second limit, the about respectively 80 μ m of the length of extension 37a and 37d, the about respectively 228 μ m of the length of extension 37b and 37c, the about respectively 58 μ m of the length of 38a of clamping zone portion and 38c, the about 194 μ m of the length of the 38b of clamping zone portion.Therefore, the length of the 38a～38c of clamping zone portion adds up to about 310 μ m, adds up to about 616 μ m littler than the length of extension 37a～37d.And, shown in Figure 15 B, in the element on right side, the R that represents with right oblique line on tiltedly ₂Equate with the area of light-emitting zone integral body, therefore, the R that in the element in left side, represents with right oblique line under tiltedly ₁One side compares R ₂Littler.Particularly, the R/L of first limit 311 and opposed edge 313 thereof is respectively about 0.26mm ²/ mm, the R/L of second limit 312 and opposed edge 314 thereof is respectively about 0.43mm ²/ mm.And, one side S/L all about 0.082mm in office ²/ mm, about equally.

As a comparative example 2, as shown in figure 16, make the light-emitting device that removes according to making the mutual relative mode configuring semiconductor light-emitting component in second limit 312 similarly to Example 2.For under the situation of about 700mA, for the light beam of the related light-emitting device of embodiment 2 and comparative example 2, is 240.41m among the embodiment 2 at electric current, is 235.61m in the comparative example 2, and by the light-emitting device of employing embodiment 2, light beam improves 2% approximately.Like this, by adopting the light-emitting device of present embodiment, can improve the light beam of light-emitting device.

(embodiment 3)

Figure 17 is the diagrammatic top view of the related semiconductor light-emitting elements of expression embodiment 3, and Figure 18 A is the diagrammatic top view of the upper surface outward appearance of the related light-emitting device of expression embodiment 3.The related light-emitting device 401 of present embodiment has been installed the semiconductor light-emitting elements of two same configuration with row shape flip-chip on the conductor wiring 410a～410c of same supporting substrate 49, the shape of light-emitting zone of comparing the semiconductor light-emitting elements of being installed with embodiment 1 with 2 light-emitting device is different.And, similarly to Example 2, the part that is connected with the negative electrode of conductor wiring 410a～410c extends to the opposed position of institute, luminescent layer end between the positive and negative electrode of light-emitting component and is provided with, and the end of conductor wiring is roughly consistent with the end of n electrode 44 sides of p electrode 43.And shown in Figure 18 A, the outside join domain 415 of second electrode of an element and the outside join domain 416 of first electrode are connected with different conductor wiring.

The light-emitting component of present embodiment shown in Figure 17 is that each limit is about 1mm and overlooks down and is essentially foursquare element, on the light-transmitting substrate 420 that semiconductor growth layer is used, light-emitting zone 41 with the lit-par-lit structure that comprises n type semiconductor layer and p type semiconductor layer, on p N-type semiconductor N laminar surface, be formed with p electrode 43, be formed with n electrode 44 as first electrode on the surface of exposing zone 42 that comprises the n type semiconductor layer of exposing from the p type semiconductor layer as second electrode.P electrode 43 has the 46a～46c of clamping zone portion and extension 45a～45d in first limit of element, 411 sides, for for the length of the edge direction on first limit 411, the about 552 μ m of the total of the 46a～46c of clamping zone portion, the about 372 μ m of the total of extension 45a～45d, the length of the 46a～46c of clamping zone portion is longer than extension 45a～45d.And light-emitting zone 41 has peristome, and regional 42 surfaces of exposing of exposing in peristome are provided with n electrode 44.

On the other hand, in second limit, 412 sides, dispose extension 47a～47d, the 48a of clamping zone portion and 48b.On the edge direction on second limit 412, the length of 48a of clamping zone portion and 48b adds up to about 408 μ m, and is littler than the about 516 μ m of total of the length of extension 47a～47c.And, shown in Figure 18 B, in the element on right side, the R that represents with right oblique line on tiltedly ₂Equate with the area of light-emitting zone integral body, therefore, the R that in the element in left side, represents with right oblique line under tiltedly ₁One side compares R ₂Littler.Particularly, the R/L of first limit 411 and opposed edge 413 thereof is respectively about 0.42mm ²/ mm, the R/L of second limit 412 and opposed edge 414 thereof is respectively about 0.51mm ²/ mm.And, one side S/L all about 0.071mm in office ²/ mm, about equally.When two of light-emitting device alignment arrangements that such embodiment 3 is related, that is, the light beam the when mode of arranging along row according to four light-emitting components disposes is about 476.81m under the situation of the about 650mA of electric current.

As a comparative example 3, as shown in figure 19, make the light-emitting device that removes according to making the mutual relative mode configuring semiconductor light-emitting component in second limit 412 similarly to Example 3.If in the light-emitting device of embodiment 3 and comparative example 3 light beam is compared, then embodiment 3 one side's light beams improve.

Claims (13)

1, a kind of light-emitting device comprises:

Semiconductor light-emitting elements, it sets gradually first semiconductor layer of first conductivity type and second semiconductor layer of second conductivity type on light-transmitting substrate, exposed division at described first semiconductor layer is provided with first electrode, is provided with second electrode at described second semiconductor layer; With

Supporting substrate, the described semiconductor light-emitting elements of its mounting;

It is rectangle that described semiconductor light-emitting elements is overlooked down, has first limit and second limit different with described first limit at least,

The light ratio that penetrates from the element end face of described first avris is stronger from the light that the element end face of described second avris penetrates,

Plural described semiconductor light-emitting elements is installed on the described supporting substrate by flip-chip with the row shape according to mutual almost parallel in described first limit and relative mode.

2, light-emitting device according to claim 1 is characterized in that,

For described first limit of described each semiconductor light-emitting elements, see that to the direction of the opposed edge on this limit relative with the exposed division and the described opposed edge of described first semiconductor layer of described first avris, the area of establishing described second electrode in this zone is R ₁, described first limit length be L ₁,

For described second limit, see that to the direction of the opposed edge on this limit relative with the exposed division and the described opposed edge of described first semiconductor layer of described second avris, the area of establishing described second electrode in this zone is R ₂, described second limit length be L ₂, under this situation,

R ₁With L ₁Ratio R ₁/ L ₁Compare R ₂With L ₂Ratio R ₂/ L ₂Littler.

3, light-emitting device according to claim 2 is characterized in that,

For the opposed edge on described first limit, see that to the direction on described first limit relative with the exposed division and described first limit of described first semiconductor layer of described opposed avris, the area of establishing described second electrode in this zone is R ₁', the length on described first limit is L ₁' time, R ₁' with L ₁' ratio R ₁'/L ₁' with described R ₁/ L ₁About equally.

4, light-emitting device according to claim 1 is characterized in that,

Described second limit is the limit with the described first limit adjacency.

5, light-emitting device according to claim 1 is characterized in that,

Described second electrode of described each semiconductor light-emitting elements has at described first avris: first extension that more extends by the first clamping zone portion of described first limit and described exposed division clamping, than this clamping zone portion to the inboard of element,

On the length direction on described first limit, the described first clamping zone portion is longer than described first extension.

6, light-emitting device according to claim 5 is characterized in that,

Described second electrode has second extension at described second avris, has been made of second electrode of described second avris described second extension.

7, light-emitting device according to claim 5 is characterized in that,

Described second electrode has at described second avris: the second clamping zone portion, second extension that more extends than this second clamping zone portion to the inboard of element,

The length A of the described first clamping zone portion on the length direction on described first limit ₁Length L with described first limit ₁Ratio A ₁/ L ₁And the length A of the described second clamping zone portion on the length direction on described second limit ₂Length L with described second limit ₂Ratio A ₂/ L ₂About equally or bigger than it.

8, light-emitting device according to claim 7 is characterized in that,

On the length direction on described second limit, the described second clamping zone portion is shorter than described second extension.

9, light-emitting device according to claim 1 is characterized in that,

Overlook down, for by the area S in the zone of the opposed edge on limit of described semiconductor light-emitting elements and this limit and the described second semiconductor layer clamping, for the ratio S/L of the length L on this limit, the S on described first limit ₁/ L ₁S with described second limit ₂/ L ₂About equally.

10, light-emitting device according to claim 1 is characterized in that,

Overlook down, for the area S in the zone of the opposed edge on limit of described semiconductor light-emitting elements and this limit and the described second semiconductor layer clamping, for the ratio S/L of the length L on this limit, the S on described first limit ₁/ L ₁S than described second limit ₂/ L ₂Littler.

11, according to claim 9 or 10 described light-emitting devices, it is characterized in that,

Described second limit is the limit different with the opposed edge on described first limit,

The described S/L of the opposed edge on described first limit and described first limit about equally, the described S/L of the opposed edge on described second limit and described second limit is also about equally.

12, light-emitting device according to claim 1 is characterized in that,

Described second electrode is than the more close described first avris setting of described first electrode.

13, light-emitting device according to claim 1 is characterized in that,

Described semiconductor light-emitting elements has luminescent layer between described first semiconductor layer and described second semiconductor layer, at the exposed division of described first semiconductor layer and be provided with between described second semiconductor layer of described second electrode, the end face of described luminescent layer exposes,

Described supporting substrate has the cloth line electrode of described first and second electrode that connects described semiconductor light-emitting elements,

Described cloth line electrode is overlooked down under the end face exposed division that is arranged at described luminescent layer at least.

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