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JP2008277682A - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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Publication number
JP2008277682A
JP2008277682A JP2007122257A JP2007122257A JP2008277682A JP 2008277682 A JP2008277682 A JP 2008277682A JP 2007122257 A JP2007122257 A JP 2007122257A JP 2007122257 A JP2007122257 A JP 2007122257A JP 2008277682 A JP2008277682 A JP 2008277682A
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Prior art keywords
substrate
liquid
processing apparatus
air
knife
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JP2007122257A
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JP4850775B2 (en
Inventor
Yukio Tomifuji
幸雄 富藤
Hiroyuki Nakada
宏幸 中田
Yoshihiko Matsushita
佳彦 松下
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Dainippon Screen Manufacturing Co Ltd
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Dainippon Screen Manufacturing Co Ltd
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Priority to JP2007122257A priority Critical patent/JP4850775B2/en
Priority to TW97107925A priority patent/TWI467643B/en
Priority to CN200810091639XA priority patent/CN101303968B/en
Priority to KR1020080035529A priority patent/KR100934329B1/en
Publication of JP2008277682A publication Critical patent/JP2008277682A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303Apparatus specially adapted to the manufacture of LCDs

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Weting (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To prevent a processing liquid adhering to a nozzle member from dropping onto a substrate. <P>SOLUTION: A substrate processing apparatus 1 includes a liquid knife 16 for discharging a rinse liquid obliquely from upstream to downstream of the carrying direction of a substrate S on an upper surface of the substrate which is being carried, and gas jetting means having an air nozzle 32 for jetting air toward the liquid knife 16. Under control of a controller 40, air is blown from the air nozzle 32 to the liquid knife 16 when the substrate S does not exist under the liquid knife 16. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、LCD、PDP用ガラス基板および半導体基板等の基板に処理液を供給して各種処理を施す基板処理装置に関するものである。   The present invention relates to a substrate processing apparatus for supplying a processing liquid to a substrate such as an LCD, a glass substrate for PDP, and a semiconductor substrate and performing various processes.

従来から、基板を搬送しながらその表面に各種処理液を供給することにより所定のプロセス処理を基板に施すことが行われており、例えば特許文献1には、薬液処理後の基板を搬送しながら、液ナイフ(スリットノズル)およびシャワーノズルにより順次基板に洗浄液を供給して洗浄処理を施すものが開示されている。   2. Description of the Related Art Conventionally, predetermined processing is performed on a substrate by supplying various processing liquids to the surface of the substrate while transporting the substrate. For example, Patent Document 1 discloses that a substrate after chemical processing is transported. Further, there is disclosed a technique in which a cleaning liquid is sequentially supplied to a substrate by a liquid knife (slit nozzle) and a shower nozzle to perform a cleaning process.

この装置では、搬入されて来る基板に対し、まず液ナイフにより搬送方向上流側から下流側に向かって斜め方向に帯状の洗浄液を吐出させ、これにより基板の先端側から順に、薬液反応を迅速に、かつ基板の幅方向に均一に終息させ、その後、シャワーノズルから吐出される洗浄液により基板に仕上げ洗浄を施す構成となっている。
特開2004−273984号公報
In this apparatus, a belt-like cleaning liquid is first discharged in a slanting direction from the upstream side to the downstream side in the transport direction with a liquid knife on the substrate that is carried in, so that the chemical reaction is rapidly performed in order from the front side of the substrate. In addition, the substrate is terminated uniformly in the width direction of the substrate, and then the substrate is subjected to finish cleaning with the cleaning liquid discharged from the shower nozzle.
JP 2004-273984 A

ところで、液ナイフから洗浄液を吐出させる場合、洗浄液の流量がある程度安定するまでに多少の液だれが生じることが経験的に知られているが、その場合、ナイフ表面を伝って流下した洗浄液が液ナイフ下面等に残っていると、これが搬送中の基板上に滴下して基板の品質を低下させることが考えられる。すなわち、液ナイフから洗浄液が滴下することにより、本来の吹き付け(供給)位置よりも上流側の位置で薬液の一部が早期に置換され、その結果、基板面内での薬液反応時間の均一性が損なわれることが考えられる。また、長期間継続的に洗浄液を吐出させていると、洗浄液のミストが液ナイフに付着し、これが雫となって液ナイフから基板上に滴下することとも考えられ、この場合も上記と同様に基板の品質低下の原因となる。従って、このような不都合を未然に回避することが求められる。   By the way, it is empirically known that when the cleaning liquid is discharged from the liquid knife, some dripping occurs until the flow rate of the cleaning liquid is stabilized to some extent. In this case, the cleaning liquid flowing down along the knife surface is liquid. If it remains on the lower surface of the knife or the like, it may be dropped on the substrate being transported to deteriorate the quality of the substrate. That is, when the cleaning liquid is dropped from the liquid knife, a part of the chemical liquid is replaced at an early stage at a position upstream of the original spraying (supply) position, and as a result, the uniformity of the chemical reaction time within the substrate surface is achieved. May be damaged. In addition, if the cleaning liquid is continuously discharged for a long period of time, it is considered that the mist of the cleaning liquid adheres to the liquid knife, which becomes a trap and drops from the liquid knife onto the substrate. It causes the quality of the board to deteriorate. Therefore, it is required to avoid such inconvenience.

本発明は、上記の事情に鑑みてなされたものであって、液ナイフ等のノズル部材から基板上に不要な処理液が滴下するのを防止し、これによって基板の品質向上に貢献することを目的とする。   The present invention has been made in view of the above circumstances, and prevents unnecessary processing liquid from dripping onto a substrate from a nozzle member such as a liquid knife, thereby contributing to the improvement of the quality of the substrate. Objective.

上記課題を解決するために、本発明の基板処理装置は、搬送中の基板の上面に、その搬送方向上流側から下流側に向かって斜め方向に処理液を吐出するノズル部材を備えた基板処理装置において、前記ノズル部材に向けて気体を噴射する気体噴射手段と、前記ノズル部材の下方に基板がないときに前記気体を噴射すべく前記気体噴射手段を制御する制御手段と、を備えるものである(請求項1)。   In order to solve the above-described problems, a substrate processing apparatus of the present invention includes a nozzle member that discharges a processing liquid in an oblique direction from the upstream side to the downstream side in the transport direction on the upper surface of a substrate being transported. In the apparatus, gas injection means for injecting gas toward the nozzle member, and control means for controlling the gas injection means to inject the gas when there is no substrate below the nozzle member. (Claim 1).

この基板処理装置によれば、気体噴射手段によりノズル部材に対して気体が吹き付けられることにより、液だれによる処理液の雫等、ノズル部材の表面に付着した処理液が除去される。これによりノズル部材に付着した処理液が基板上に滴下することが未然に防止される。なお、気体の噴射は、ノズル部材の下方に基板がないときに行われるように制御されるため、ノズル部材から除去された処理液が基板上に飛散することもない。   According to this substrate processing apparatus, the processing liquid adhering to the surface of the nozzle member, such as soaking of the processing liquid due to liquid dripping, is removed by blowing the gas onto the nozzle member by the gas jetting means. This prevents the treatment liquid adhering to the nozzle member from dropping on the substrate. The gas injection is controlled so as to be performed when there is no substrate below the nozzle member, so that the processing liquid removed from the nozzle member is not scattered on the substrate.

具体的な構成として、前記制御手段は、例えば前記ノズル部材による処理液の吐出が開始されてから当該処理液の吐出量が安定する所定の安定化条件が満たされるまでの間、前記気体を噴射するように前記気体噴射手段を制御する(請求項2)。   As a specific configuration, the control unit injects the gas, for example, from the start of the discharge of the processing liquid by the nozzle member until a predetermined stabilization condition for stabilizing the discharge amount of the processing liquid is satisfied. Thus, the gas injection means is controlled (claim 2).

この構成によれば、処理液の吐出開始直後の液垂れに起因するノズル材からの処理液の滴下を有効に防止することが可能となる。   According to this configuration, dripping of the processing liquid from the nozzle material due to liquid dripping immediately after the start of discharging of the processing liquid can be effectively prevented.

また、前記制御手段は、被処理基板が前記ノズル部材の下方に到達する直前の所定時間だけ前記気体を噴射するように前記気体噴射手段を制御するものでもよい(請求項3)。   The control means may control the gas injection means so as to inject the gas for a predetermined time immediately before the substrate to be processed reaches below the nozzle member.

この構成によれば、ノズル部材に付着したミスト状の処理液等を、基板の処理直前に除去することが可能となる。   According to this configuration, it is possible to remove mist-like processing liquid and the like attached to the nozzle member immediately before processing the substrate.

なお、上記の構成において、前記気体噴射手段は、前記ノズル部材に対して、前記搬送路の上流側から下流側に向かって前記気体を噴射するものであるのが好適である(請求項4)。   In the above configuration, it is preferable that the gas jetting unit jets the gas from the upstream side to the downstream side of the transport path with respect to the nozzle member. .

この構成によれば、ノズル部材に付着した処理液を下流側に吹き飛ばすことができるため、除去した処理液が、処理前の基板上に飛散することを有効に防止することができる。   According to this configuration, since the processing liquid attached to the nozzle member can be blown downstream, it is possible to effectively prevent the removed processing liquid from being scattered on the substrate before processing.

この場合、前記ノズル部材よりも前記搬送方向上流側に、基板の上面に向けて気体を噴射することにより基板上の処理液の上流側への流動を防止する逆流防止手段が設けられるものでは、この逆流防止手段が、基板および前記ノズル部材の双方に対して前記気体を噴射可能に構成されることにより、前記気体噴射手段として当該逆流防止手段が兼用されているものであってもよい(請求項5)。   In this case, a backflow prevention means for preventing the flow of the processing liquid on the substrate to the upstream side by injecting gas toward the upper surface of the substrate on the upstream side in the transport direction from the nozzle member is provided. The backflow prevention means may be configured to be capable of injecting the gas to both the substrate and the nozzle member, so that the backflow prevention means is also used as the gas injection means. Item 5).

この構成によれば、前記気体噴射手段として当該逆流防止手段を兼用した合理的な構成で、ノズル部材の表面に付着した処理液を除去することが可能となる。   According to this configuration, it is possible to remove the processing liquid adhering to the surface of the nozzle member with a rational configuration that also serves as the backflow preventing unit as the gas injection unit.

請求項1〜5に係る基板処理装置によると、ノズル部材から基板上に不要な処理液が滴下するのを有効に防止することができ、これによって基板の品質向上に貢献することができる。特に、請求項2の構成によると、処理液の吐出開始直後の液垂れに起因する処理液の滴下を有効に防止することができ、また、請求項3の構成によると、ノズル部材に付着したミスト状の処理液に起因する処理液の滴下を有効に防止することができる。また、請求項4の構成によると、ノズル部材から除去した処理液が、処理前の基板上に飛散するといった事態を効果的に防止でき、さらに、請求項4の構成によると、上記のような効果を享受しつつ、気体噴射手段として逆流防止手段を兼用した合理的な構成を達成することができる。   According to the substrate processing apparatus which concerns on Claims 1-5, it can prevent effectively that an unnecessary process liquid dripping on a board | substrate from a nozzle member, and can contribute to the quality improvement of a board | substrate by this. In particular, according to the configuration of claim 2, it is possible to effectively prevent dripping of the processing liquid due to liquid dripping immediately after the start of discharge of the processing liquid, and according to the configuration of claim 3, it adheres to the nozzle member. The dripping of the processing liquid resulting from the mist processing liquid can be effectively prevented. Further, according to the configuration of claim 4, it is possible to effectively prevent the processing liquid removed from the nozzle member from being scattered on the substrate before processing. Further, according to the configuration of claim 4, While enjoying the effect, it is possible to achieve a rational configuration that also serves as the backflow preventing means as the gas injection means.

本発明の好ましい実施の形態について図面を用いて説明する。   A preferred embodiment of the present invention will be described with reference to the drawings.

図1は、本発明の第1の実施形態に係る基板処理装置を断面図で概略的に示している。この図に示す基板処理装置1は、基板Sを図中の矢印方向に水平姿勢で搬送しながら、前工程で薬液処理(例えばフォトレジスト液の剥離処理)が施された当該基板Sに対して洗浄処理を施すものである。   FIG. 1 schematically shows a cross-sectional view of a substrate processing apparatus according to a first embodiment of the present invention. The substrate processing apparatus 1 shown in this figure is directed to the substrate S that has been subjected to a chemical process (for example, a photoresist solution peeling process) in the previous process while transporting the substrate S in a horizontal posture in the direction of the arrow in the figure. A cleaning process is performed.

基板処理装置1は、同図に示すように略密閉された処理室10を有している。この処理室10には、複数の搬送ローラ14が所定間隔で配備されており、これら搬送ローラ14によって構成される搬送路に沿って基板Sが水平姿勢で搬送されるようになっている。なお、図中符号12aは、処理室10の側壁に形成される基板Sの搬入口を示し、また、符号12bは、同搬出口を示している。   The substrate processing apparatus 1 has a processing chamber 10 that is substantially sealed as shown in FIG. In the processing chamber 10, a plurality of transport rollers 14 are arranged at predetermined intervals, and the substrate S is transported in a horizontal posture along a transport path constituted by the transport rollers 14. In addition, the code | symbol 12a in the figure shows the carrying-in port of the board | substrate S formed in the side wall of the process chamber 10, and the code | symbol 12b has shown the carrying-out port.

前記処理室10の内部には、基板Sに対してリンス液(当例では純水;本発明の処理液に相当する)を供給するための2種類の液ノズルが配備されている。具体的には、搬入口12aの直ぐ近傍に液ナイフ16(本発明に係るノズル部材に相当する)が配備され、この液ナイフ16の下流側(同図では右側)にシャワーノズル18a,18bが配備されている。   Two kinds of liquid nozzles for supplying a rinsing liquid (in this example, pure water; corresponding to the processing liquid of the present invention) to the substrate S are provided in the processing chamber 10. Specifically, a liquid knife 16 (corresponding to a nozzle member according to the present invention) is provided in the immediate vicinity of the carry-in port 12a, and shower nozzles 18a and 18b are provided downstream of the liquid knife 16 (right side in the figure). Has been deployed.

前記液ナイフ16は、処理室10の壁面等に図外の取付け用アームを介して固定されている。この液ナイフ16は、基板Sの搬送路の幅方向(基板Sの搬送方向と直交する方向;同図では紙面に直交する方向)に細長で、かつ、その長手方向に連続的に延びる細長の吐出口をもついわゆるスリットノズルからなり、同図に示すように、吐出口を斜め下向きにした状態で搬送ローラ14の上部に配置されている。これによって、液ナイフ16から基板Sに対して、その搬送方向上流側から下流側に向かって斜め下向きにリンス液を帯状(層状)に吐出する構成となっている。   The liquid knife 16 is fixed to the wall surface of the processing chamber 10 via an attachment arm (not shown). The liquid knife 16 is elongated in the width direction of the transport path of the substrate S (the direction orthogonal to the transport direction of the substrate S; the direction orthogonal to the paper surface in the figure) and continuously extends in the longitudinal direction. It consists of a so-called slit nozzle having a discharge port, and is arranged on the upper portion of the transport roller 14 with the discharge port inclined downward as shown in FIG. Thus, the rinsing liquid is discharged from the liquid knife 16 to the substrate S in a strip shape (layered) obliquely downward from the upstream side to the downstream side in the transport direction.

一方、前記シャワーノズル18a,18bは、搬送ローラ14を挟んで上下両側に配置されており、例えばマトリクス状に配備されたノズル口からそれぞれ液滴状にリンス液を吐出して基板Sに吹き付ける構成となっている。   On the other hand, the shower nozzles 18a and 18b are arranged on both upper and lower sides with the conveying roller 14 in between. For example, the shower nozzles 18a and 18b are configured to discharge the rinse liquid in the form of droplets from the nozzle openings arranged in a matrix and spray the liquid onto the substrate S, for example. It has become.

なお、リンス液は、同図に示すように処理室10の下方に配置されたタンク20に貯溜されており、ポンプ22の作動により導出管24を通じてタンク20から導出され、この導出管24から分岐する供給管26〜28を通じてそれぞれ液ナイフ16および各シャワーノズル18a,18bに供給される構成となっている。各供給管26〜28にはそれぞれ、開閉バルブV1〜V3が介設されており、これら開閉バルブV1〜V3の操作により液ナイフ16等によるリンス液の供給・停止、あるいは供給量が制御される。   The rinsing liquid is stored in a tank 20 disposed below the processing chamber 10 as shown in the figure, and is led out from the tank 20 through the outlet pipe 24 by the operation of the pump 22, and is branched from the outlet pipe 24. The supply pipes 26 to 28 are supplied to the liquid knife 16 and the shower nozzles 18a and 18b, respectively. The supply pipes 26 to 28 are provided with opening / closing valves V1 to V3, respectively, and the operation of the opening / closing valves V1 to V3 controls the supply / stop of the rinse liquid by the liquid knife 16 or the like, or the supply amount. .

また、前記処理室10には、その内底部に漏斗状の回収パン(図示省略)が設けられており、使用済みのリンス液がこの回収パンにより収集されながら回収管30を通じて前記タンク20に戻されるようになっている。つまり、この基板処理装置1では、タンク20と液ナイフ16等との間でリンス液を循環させながら繰り返し使用するようにリンス液の給排系統が構成されている。なお、回収管30にはその途中部分から廃液管が分岐して設けられており、劣化したリンス液がこの廃液管を通じて廃棄されるように構成されるとともに、新たなリンス液を、図外の新液供給管を通じて前記タンク20に供給可能に構成されている。   The processing chamber 10 is provided with a funnel-shaped recovery pan (not shown) at its inner bottom, and the used rinse liquid is returned to the tank 20 through the recovery pipe 30 while being collected by the recovery pan. It is supposed to be. That is, in the substrate processing apparatus 1, a rinse liquid supply / discharge system is configured so that the rinse liquid is repeatedly used while circulating between the tank 20 and the liquid knife 16. The recovery pipe 30 is provided with a waste liquid pipe branched from the middle portion thereof, and is configured so that the deteriorated rinse liquid is discarded through the waste liquid pipe. The tank 20 can be supplied through a new liquid supply pipe.

前記処理室10内には、さらに液ナイフ16に向かって気体(当例ではエア)を吹き付けるためのエアノズル32が設けられている。このエアノズル32は、前記液ナイフ16に沿って延びる細長で、かつ、その長手方向に複数の円形の吐出口が並んだスプレーノズル、又は長手方向に連続的(又は断続的)に延びる細長の吐出口をもつスリットノズルからなり、搬入口12aの近傍の一対の搬送ローラ14の間の部分に配置されている。これによって、図2に示すように、液ナイフ16の下方に基板Sが存在しない時に、搬送路の下方から液ナイフ16の先端部分に向かって斜め上向きに、詳しくはやや基板Sの搬送方向上流側から下流側に向かって斜め上向きにエアノズル32からエアを噴射し得る構成となっている。   An air nozzle 32 for blowing gas (air in this example) toward the liquid knife 16 is further provided in the processing chamber 10. The air nozzle 32 is an elongated nozzle extending along the liquid knife 16 and having a plurality of circular discharge ports arranged in the longitudinal direction, or an elongated discharge extending continuously (or intermittently) in the longitudinal direction. It consists of a slit nozzle having an outlet, and is disposed in a portion between the pair of transport rollers 14 in the vicinity of the transport inlet 12a. As a result, as shown in FIG. 2, when the substrate S does not exist below the liquid knife 16, it is obliquely upward from the lower side of the transport path toward the tip of the liquid knife 16, specifically, slightly upstream in the transport direction of the substrate S. It is the structure which can inject air from the air nozzle 32 diagonally upward toward the downstream from the side.

前記エアノズル32は、図1に示すように、エア供給管36を介して図外のエア供給源に接続されており、エア供給管36に介設される開閉バルブV4の操作によりエアノズル32によるエアの噴射・停止が制御されるように構成されている。   As shown in FIG. 1, the air nozzle 32 is connected to an air supply source (not shown) via an air supply pipe 36, and air by the air nozzle 32 is operated by operating an open / close valve V <b> 4 provided in the air supply pipe 36. The injection / stop of the engine is controlled.

なお、この基板処理装置1には、CPU等を構成要素とするコントローラ40(本発明の制御手段に相当する)が設けられており、搬送ローラ14の駆動や前記開閉バルブV1〜V4の切換え操作がこのコントローラ40により統括的に制御されるように構成されている。特に、この装置1では、図1に示すように、処理室10外の前記搬入口12aよりもやや上流側と、処理室10内の前記搬出口12bの近傍とにそれぞれ基板Sを検知するセンサ(第1センサ42,第2センサ44という)が配置されおり、コントローラ40は、これらセンサ42,44による基板Sの検知に基づき開閉バルブV1〜V4を制御する。   The substrate processing apparatus 1 is provided with a controller 40 (corresponding to the control means of the present invention) having a CPU or the like as a component, and drives the transport roller 14 and switches the open / close valves V1 to V4. Are controlled by the controller 40 in a centralized manner. In particular, in the apparatus 1, as shown in FIG. 1, sensors that detect the substrate S on the slightly upstream side of the carry-in port 12a outside the processing chamber 10 and in the vicinity of the carry-out port 12b in the processing chamber 10, respectively. (Referred to as the first sensor 42 and the second sensor 44) are arranged, and the controller 40 controls the open / close valves V1 to V4 based on the detection of the substrate S by the sensors 42 and 44.

次に、このコントローラ40による開閉バルブV1〜V4の制御、つまり液ナイフ16等によるリンス液の供給制御およびエアノズル32によるエアの噴射制御について、その作用とともに説明する。   Next, the control of the on-off valves V1 to V4 by the controller 40, that is, the rinsing liquid supply control by the liquid knife 16 and the air injection control by the air nozzle 32 will be described together with the operation thereof.

図4は、上記コントローラ40による開閉バルブV1〜V4の制御の一例を示すタイミングチャートである。同図に示すように、コントローラ40は、第1センサ42により基板Sが検出されるまでは、各開閉バルブV1〜V4を閉止制御し、これより液ナイフ16等からのリンス液の吐出、およびエアノズル32からのエアの噴射を停止させておく。   FIG. 4 is a timing chart showing an example of control of the on-off valves V1 to V4 by the controller 40. As shown in the figure, the controller 40 controls the opening and closing valves V1 to V4 to be closed until the first sensor 42 detects the substrate S, thereby discharging the rinsing liquid from the liquid knife 16 and the like. Air injection from the air nozzle 32 is stopped.

そして、基板Sが搬送され、その先端が第1センサ42により検出されると(t1時点)、コントローラ40は、開閉バルブV1〜V3を閉止状態から開放状態に切換え、これにより液ナイフ16およびシャワーノズル18a,18bからのリンス液の吐出を開始する。また、これと同時に開閉バルブV4を一定時間だけ開放してエアノズル32からエアを噴射させる(t1〜t2時点)。これにより液ナイフ16によるリンス液の吐出開始後、一定時間だけエアノズル32の先端部分に対してエアを吹き付ける。   When the substrate S is transported and the front end thereof is detected by the first sensor 42 (at time t1), the controller 40 switches the open / close valves V1 to V3 from the closed state to the open state, thereby the liquid knife 16 and the shower. The discharge of the rinsing liquid from the nozzles 18a and 18b is started. At the same time, the on-off valve V4 is opened for a predetermined time to inject air from the air nozzle 32 (at time t1 to t2). As a result, after the start of the discharge of the rinse liquid by the liquid knife 16, air is blown against the tip portion of the air nozzle 32 for a certain time.

このようにエアを吹き付けると、吐出開始直後、吐出口から液ナイフ16を伝って流下するリンス液(液垂れ)や、液ナイフ16に付着したミスト状のリンス液がエア圧により除去され、これによって、例えば図3中に示すように、液ナイフ16の先端下部等にリンス液が雫状に溜まる(符号Dで示す)ことが防止される。   When air is blown in this way, immediately after the start of discharge, the rinse liquid (liquid dripping) flowing down from the discharge port through the liquid knife 16 and the mist-like rinse liquid adhering to the liquid knife 16 are removed by the air pressure. Thus, for example, as shown in FIG. 3, the rinse liquid is prevented from accumulating in a bowl shape (indicated by reference sign D) at the lower end of the tip of the liquid knife 16 or the like.

なお、エアの噴射時間(t1〜t2の時間)は、第1センサ42により基板Sの先端が検知された後、当該基板Sの先端が液ナイフ16と搬入口12aとの間の特定の地点に達するまでの時間に設定されている。つまり、エアの噴射期間を、液ナイフ16の下方に基板Sが存在しない期間とすることにより、エアノズル32から噴射されるエアが基板Sで遮断され、あるいはエア圧により液ナイフ16から除去されたリンス液が基板S上に飛散することが防止されるようになっている。なお、このエアの噴射時間は、開閉バルブV1が開放状態に切換えられてから液ナイフ16から吐出されるリンス液の吐出量が安定するまでの時間よりも充分に長い時間とされている。   In addition, after the front end of the substrate S is detected by the first sensor 42, the air injection time (time t1 to t2) is a specific point between the liquid knife 16 and the carry-in port 12a. The time to reach is set. That is, by setting the air injection period to a period in which the substrate S does not exist below the liquid knife 16, the air injected from the air nozzle 32 is blocked by the substrate S or removed from the liquid knife 16 by air pressure. The rinsing liquid is prevented from scattering on the substrate S. The air injection time is sufficiently longer than the time from when the opening / closing valve V1 is switched to the open state until the discharge amount of the rinse liquid discharged from the liquid knife 16 is stabilized.

こうしてエアノズル32からのエアの噴射が停止された後、液ナイフ16の下方に基板Sが搬送されることにより、液ナイフ16から吐出されるリンス液が、基板Sの搬送に伴いその先端側がら順に幅方向全体に亘って供給され、その結果、薬液反応が迅速に、かつ基板Sの幅方向に均一に終息することとなる。この際、上記の通り、予め液ナイフ16にエアが吹き付けられ、液ナイフ16に付着したリンス液が除去されているため、図3に示すように、液ナイフ16の先端下部等に溜まったリンス液の雫等(符号D)が、リンス液の本来の供給位置P1よりも上流側の位置P2に滴下することが有効に防止される。   After the ejection of air from the air nozzle 32 is stopped in this way, the substrate S is transported below the liquid knife 16, so that the rinsing liquid discharged from the liquid knife 16 is separated from the tip side of the substrate S as the substrate S is transported. Sequentially, the chemical solution reaction is promptly terminated uniformly in the width direction of the substrate S. At this time, as described above, the air is sprayed on the liquid knife 16 in advance, and the rinse liquid adhering to the liquid knife 16 is removed. Therefore, as shown in FIG. It is possible to effectively prevent the liquid soot (symbol D) from dropping at a position P2 upstream of the original supply position P1 of the rinse liquid.

基板Sが液ナイフ16の位置を通過すると、次いでシャワーノズル18a,18bから吐出される大量のリンス液が基板Sの上面および下面に対して供給され、これにより基板Sが仕上げ洗浄される。   When the substrate S passes the position of the liquid knife 16, a large amount of rinse liquid discharged from the shower nozzles 18a and 18b is then supplied to the upper and lower surfaces of the substrate S, whereby the substrate S is finished and cleaned.

そして、さらに基板Sが搬送され、第2センサ44により基板Sの先端が検知されると(t3時点)、コントローラ40は、開閉バルブV1を開放状態から閉止状態に切換え、これにより液ナイフ16からのリンス液の吐出を停止し、さらに、基板Sの後端が第2センサ44により検知されると(t4時点)、開閉バルブV2,V3をそれぞれ開放状態から閉止状態に切換え、これによりシャワーノズル18a,18bからのリンス液の吐出を停止する。以上により、基板Sの一連の洗浄処理が終了する。   When the substrate S is further transported and the leading edge of the substrate S is detected by the second sensor 44 (at time t3), the controller 40 switches the open / close valve V1 from the open state to the closed state, whereby the liquid knife 16 When the second sensor 44 detects the rear end of the substrate S (at time t4), the open / close valves V2 and V3 are switched from the open state to the closed state, whereby the shower nozzle The discharge of the rinse liquid from 18a and 18b is stopped. Thus, a series of cleaning processes for the substrate S is completed.

以上のように、この基板処理装置1では、エアノズル32の先端部分にエアを吹き付けることにより吐出口から液ナイフ16を伝って流下するリンス液(液垂れ)や、液ナイフ16に付着したミスト状のリンス液を除去し、これによって液ナイフ16から基板S上に不要なリンス液が滴下するのを防止する構成となっているので、本来の供給位置P1よりも上流側の位置P2に液ナイフ16からリンス液が滴下して薬液反応が部分的に早期に終息し、その結果、薬液処理の均一性が損なわれるといった不都合が生じるのを有効に防止することができる。従って、このような不都合を回避できる分、基板Sに対して薬液処理をより均一に施すことが可能となり、基板の品質をより一層高めることができる。   As described above, in this substrate processing apparatus 1, the rinsing liquid (liquid dripping) that flows down from the discharge port through the liquid knife 16 by blowing air onto the tip portion of the air nozzle 32, or the mist shape attached to the liquid knife 16. The rinsing liquid is removed so that unnecessary rinsing liquid is prevented from dripping from the liquid knife 16 onto the substrate S. Therefore, the liquid knife is placed at a position P2 upstream of the original supply position P1. It is possible to effectively prevent the occurrence of inconvenience that the rinsing liquid is dripped from 16 and the chemical reaction is partially terminated early, and as a result, the uniformity of the chemical processing is impaired. Accordingly, the chemical liquid treatment can be more uniformly performed on the substrate S as much as such inconvenience can be avoided, and the quality of the substrate can be further improved.

次に、本発明の第2の実施形態について説明する。   Next, a second embodiment of the present invention will be described.

図5は、第2の実施形態に係る基板処理装置を断面図で概略的に示している。この第2の実施形態の基板処理装置2は、同図に示すようにエアノズル32が搬送路の上方に設けられ、リンス液の逆流防止手段として前記エアノズル32等が兼用された構成となっている点で、第1の実施形態の基板処理装置1と構成が相違している。   FIG. 5 schematically shows a substrate processing apparatus according to the second embodiment in a cross-sectional view. In the substrate processing apparatus 2 of the second embodiment, as shown in the figure, an air nozzle 32 is provided above the conveyance path, and the air nozzle 32 and the like are also used as a backflow preventing means for rinsing liquid. In this respect, the configuration is different from the substrate processing apparatus 1 of the first embodiment.

具体的には、液ナイフ16の後端下側(図5では左端下方)の部分にエアノズル32が配置され、液ナイフ16の先端下部に向かって上流側から下流側に斜め下向きにエアを噴射するようにエアノズル32が配備されている。   Specifically, an air nozzle 32 is arranged at the lower part of the rear end of the liquid knife 16 (lower left end in FIG. 5), and air is injected obliquely downward from the upstream side toward the downstream side toward the lower end of the liquid knife 16. The air nozzle 32 is arranged to do this.

このエアノズル32は、図6に示すように、液ナイフ16の先端下部に向かってエアを噴射するとともに、液ナイフ16等の下方に基板Sがある時には、その上面に対して上流側から下流側に向かってエアを噴射し得るようにその噴射角度が設定されている。つまり、上記コントローラ40による開閉バルブV4の制御により、基板Sの処理の際には、第1の実施形態と同様に、エアノズル32の先端部分にエアを吹き付けて吐出口から液ナイフ16を伝って流下するリンス液(液だれ)や、液ナイフ16に付着したミスト状のリンス液を除去する一方で、例えば基板Sの搬送トラブル等により、処理室10とその上流側の処理室とに跨った状態で基板Sの搬送が停止した場合(図6の二点鎖線に示す状態)には、エアノズル32から基板Sの上面に向かってエアを噴射することにより、基板S上のリンス液の逆流、つまり基板S上に供給されたリンス液が当該基板Sを伝って上流側の処理室に流入するのを防止するように構成されている。   As shown in FIG. 6, this air nozzle 32 injects air toward the lower end of the liquid knife 16, and when the substrate S is below the liquid knife 16, etc., the upstream side from the upstream side to the downstream side thereof. The injection angle is set so that air can be injected toward the air. That is, by controlling the opening / closing valve V4 by the controller 40, during the processing of the substrate S, air is blown to the tip of the air nozzle 32 through the liquid knife 16 from the discharge port as in the first embodiment. While the rinsing liquid (drip) flowing down and the mist-like rinsing liquid adhering to the liquid knife 16 are removed, the processing chamber 10 and the processing chamber on the upstream side thereof are straddled due to, for example, a transport problem of the substrate S. When the transport of the substrate S is stopped in the state (the state shown by the two-dot chain line in FIG. 6), the backflow of the rinse liquid on the substrate S is performed by ejecting air from the air nozzle 32 toward the upper surface of the substrate S. That is, the rinse liquid supplied onto the substrate S is prevented from flowing into the upstream processing chamber along the substrate S.

このような第2の実施形態の基板処理装置2によると、第1の実施形態と同様に、液ナイフ16から基板S上への不要なリンス液の滴下を有効に防止することができる一方で、上記エアノズル32等が、液ナイフ16に対してエアを噴射するための手段と、リンス液の逆流防止手段としての機能を兼ね備えた合理的な構成が達成されるという利点がある。   According to the substrate processing apparatus 2 of the second embodiment, it is possible to effectively prevent unnecessary rinsing liquid from dropping from the liquid knife 16 onto the substrate S, as in the first embodiment. There is an advantage that the air nozzle 32 and the like can achieve a rational configuration that has a function of injecting air to the liquid knife 16 and a function of preventing the back flow of the rinsing liquid.

なお、以上説明した基板処理装置1,2は、本発明に係る基板処理装置の好ましい実施形態の例示であって、その具体的な構成、例えばエアノズル32の形状、配置、エアの噴射方向(角度)、噴射タイミング等は、必ずしも実施形態の例に限定されるものではなく、本発明の要旨を逸脱しない範囲で適宜変更可能である。   The above-described substrate processing apparatuses 1 and 2 are exemplifications of a preferred embodiment of the substrate processing apparatus according to the present invention, and the specific configuration thereof, for example, the shape and arrangement of the air nozzle 32, the air injection direction (angle) ), The injection timing and the like are not necessarily limited to the example of the embodiment, and can be appropriately changed without departing from the gist of the present invention.

例えば、上記実施形態では、エアノズル32は固定的に設けられているが、揺動機構を組込むことによりエアノズル32を搬送ローラ14と平行な軸回りに揺動可能とし、液ナイフ16に向かってエアを吹き付けながらその吹き付け方向に変化をもた得るようにしてもよい。特に、第2の実施形態の場合、液ナイフ16の液滴等を除去する上で最適なエアの吹き付け角度と、リンス液の逆流を防止する上で最適なエアの吹き付け角度とが必ずしも重複しない場合があり、エアノズル32を固定的に設けた場合には、双方の用途共に最適なエア噴射角度とすることが困難になることも考えられる。このような場合、上記のようにエアノズル32を揺動可能に設け、コントローラ40によりエアノズル32の角度(エアの噴射角度)を用途に応じて制御する構成とすれば、何れの用途の場合にも最適な角度で液ナイフ16又は基板Sにエアを噴射することが可能となる。   For example, in the above embodiment, the air nozzle 32 is fixedly provided. However, by incorporating a swing mechanism, the air nozzle 32 can be swung around an axis parallel to the transport roller 14, and the air nozzle 32 can be moved toward the liquid knife 16. You may make it obtain a change in the spraying direction, spraying. In particular, in the case of the second embodiment, the optimum air blowing angle for removing the droplets of the liquid knife 16 and the optimum air blowing angle for preventing the backflow of the rinse liquid do not necessarily overlap. In some cases, when the air nozzle 32 is fixedly provided, it may be difficult to obtain an optimal air injection angle for both applications. In such a case, if the air nozzle 32 is provided so as to be swingable as described above and the angle of the air nozzle 32 (air injection angle) is controlled according to the application by the controller 40, it can be used for any application. It becomes possible to inject air onto the liquid knife 16 or the substrate S at an optimum angle.

また、エアノズル32によるエアの噴射時期については、エアノズル32から噴射されるエアが基板Sで遮断されたり(第1の実施形態の場合)、あるいはエア圧により液ナイフ16から除去されたリンス液が基板S上に飛散するのを防止する必要があるため、最低限、液ナイフ16の下方に基板Sが存在する期間を避ける必要があるが、それ以外の期間であれば何時エアを噴射するようにしてもよい。但し、液ナイフ16によるリンス液の吐出が開始されてから当該リンス液の吐出量が安定するまでの期間は、液だれにより液ナイフ16に雫状のリンス液が残り易く、従って、上記実施形態のように、この期間に液ナイフ16に対してエアを吹き付けることがリンス液の滴下を防止する上で有効となる。   Further, regarding the air injection timing by the air nozzle 32, the air injected from the air nozzle 32 is blocked by the substrate S (in the case of the first embodiment), or the rinse liquid removed from the liquid knife 16 by the air pressure is removed. Since it is necessary to prevent scattering on the substrate S, it is necessary to avoid a period in which the substrate S exists below the liquid knife 16 at a minimum. It may be. However, during the period from when the discharge of the rinse liquid by the liquid knife 16 is started until the discharge amount of the rinse liquid is stabilized, the bowl-shaped rinse liquid is likely to remain in the liquid knife 16 due to liquid dripping. As described above, blowing air to the liquid knife 16 during this period is effective in preventing dripping of the rinse liquid.

この場合、リンス液の吐出が開始されてから供給管26内のリンス液の流量が所定値(リンス液が安定的に吐出される流量)に達するまでの時間(安定化条件)を予め測定しておき、その時間に基づいてエアの噴射時間を制御する以外に、例えば、供給管26内のリンス液の流量をリアルタイムで検出し、リンス液の吐出が開始されてから当該流量が上記所定値(安定化条件)に達する時点を検知し、当該検知に基づいてエアの噴射を停止するようにしてもよい。要は、液ナイフ16から吐出されるリンス液の吐出状態が安定する安定化条件を予め定めておき、リンス液の吐出が開始されてからその安定化条件が満たされるまでの間、エアノズル32から液ナイフ16に対してエアを噴射させるようにすればよい。   In this case, the time (stabilization condition) until the flow rate of the rinse liquid in the supply pipe 26 reaches a predetermined value (flow rate at which the rinse liquid is stably discharged) after the discharge of the rinse liquid is started is measured in advance. In addition to controlling the air injection time based on the time, for example, the flow rate of the rinsing liquid in the supply pipe 26 is detected in real time, and after the discharge of the rinsing liquid is started, the flow rate becomes the predetermined value. It is also possible to detect the time point when the (stabilization condition) is reached and stop the air injection based on the detection. In short, a stabilization condition that stabilizes the discharge state of the rinse liquid discharged from the liquid knife 16 is determined in advance, and from the start of discharge of the rinse liquid until the stabilization condition is satisfied, the air nozzle 32 Air may be jetted to the liquid knife 16.

また、複数枚の基板Sの処理期の間中、液ナイフ16やシャワーノズル18a,18bから継続的にリンス液が吐出されるような場合には、処理室10内に多量のミストが発生して、液ナイフ16にリンス液の雫が生じ易くなる。従って、このような場合には、基板Sが液ナイフ16の下方に到達する直前の一定時間だけエアを噴射することにより、基板Sの処理の直前に液ナイフ16から当該雫を除去するのが有効である。   Further, when the rinsing liquid is continuously discharged from the liquid knife 16 or the shower nozzles 18 a and 18 b during the processing period of the plurality of substrates S, a large amount of mist is generated in the processing chamber 10. As a result, the liquid knife 16 is liable to cause rinsing of the rinse liquid. Therefore, in such a case, it is possible to remove the soot from the liquid knife 16 immediately before the processing of the substrate S by injecting air for a certain period of time immediately before the substrate S reaches below the liquid knife 16. It is valid.

なお、上記の実施形態では、基板Sに洗浄処理を施す基板処理装置1,2について本発明を適用した例について説明したが、勿論、本発明は、洗浄処理に限らず薬液処理を行う基板処理装置についても適用可能である。   In the above embodiment, the example in which the present invention is applied to the substrate processing apparatuses 1 and 2 that perform the cleaning process on the substrate S has been described. Of course, the present invention is not limited to the cleaning process, and the substrate process that performs the chemical process It can also be applied to devices.

本発明に係る基板処理装置の第1の実施形態を示す断面図である。It is sectional drawing which shows 1st Embodiment of the substrate processing apparatus which concerns on this invention. 基板処理装置の要部拡大断面図である。It is a principal part expanded sectional view of a substrate processing apparatus. 液ナイフと、当該ナイフから基板上に供給されるリンス液の供給位置との関係を示す図である。It is a figure which shows the relationship between a liquid knife and the supply position of the rinse liquid supplied on a board | substrate from the said knife. コントローラによる開閉バルブの制御を示すタイミングチャートである。It is a timing chart which shows control of the on-off valve by a controller. 本発明に係る基板処理装置の第2の実施形態を示す断面図である。It is sectional drawing which shows 2nd Embodiment of the substrate processing apparatus which concerns on this invention. 基板処理装置の要部拡大断面図である。It is a principal part expanded sectional view of a substrate processing apparatus.

符号の説明Explanation of symbols

1,2 基板処理装置
10 処理室
14 搬送ローラ
16 液ナイフ
18a,18b シャワーノズル
32 エアノズル
S 基板
DESCRIPTION OF SYMBOLS 1, 2 Substrate processing apparatus 10 Processing chamber 14 Conveyance roller 16 Liquid knife 18a, 18b Shower nozzle 32 Air nozzle S Substrate

Claims (5)

搬送中の基板の上面に、その搬送方向上流側から下流側に向かって斜め方向に処理液を吐出するノズル部材を備えた基板処理装置において、
前記ノズル部材に向けて気体を噴射する気体噴射手段と、
前記ノズル部材の下方に基板がないときに前記気体を噴射すべく前記気体噴射手段を制御する制御手段と、
を備えることを特徴とする基板処理装置。
In the substrate processing apparatus provided with a nozzle member that discharges the processing liquid in an oblique direction from the upstream side to the downstream side in the transport direction on the upper surface of the substrate being transported,
Gas injection means for injecting gas toward the nozzle member;
Control means for controlling the gas injection means to inject the gas when there is no substrate below the nozzle member;
A substrate processing apparatus comprising:
請求項1に記載の基板処理装置において、
前記制御手段は、前記ノズル部材による処理液の吐出が開始されてから当該処理液の吐出状態が安定する所定の安定化条件が満たされるまでの間、前記気体を噴射するように前記気体噴射手段を制御することを特徴とする基板処理装置。
The substrate processing apparatus according to claim 1,
The control unit is configured to inject the gas from the start of discharge of the processing liquid by the nozzle member until a predetermined stabilization condition for stabilizing the discharge state of the processing liquid is satisfied. The substrate processing apparatus characterized by controlling.
請求項1又は2に記載の基板処理装置において、
前記制御手段は、被処理基板が前記ノズル部材の下方に到達する直前の所定時間だけ前記気体を噴射するように前記気体噴射手段を制御することを特徴とする基板処理装置。
In the substrate processing apparatus according to claim 1 or 2,
The substrate processing apparatus, wherein the control unit controls the gas injection unit to inject the gas only for a predetermined time immediately before the substrate to be processed reaches below the nozzle member.
請求項1乃至3の何れかに記載の基板処理装置において、
前記気体噴射手段は、前記ノズル部材に対して、前記搬送路の上流側から下流側に向かって前記気体を噴射することを特徴とする基板処理装置。
The substrate processing apparatus according to any one of claims 1 to 3,
The said gas injection means injects the said gas toward the downstream from the upstream of the said conveyance path with respect to the said nozzle member, The substrate processing apparatus characterized by the above-mentioned.
請求項4に記載の基板処理装置において、
前記ノズル部材よりも前記搬送方向上流側に、基板の上面に向けて気体を噴射することにより基板上の処理液の上流側への流動を防止する逆流防止手段が設けられるものであり、この逆流防止手段が、基板および前記ノズル部材の双方に対して前記気体を噴射可能に構成されることにより、前記気体噴射手段として当該逆流防止手段が兼用されていることを特徴とする基板処理装置。
The substrate processing apparatus according to claim 4,
Backflow prevention means is provided on the upstream side in the transport direction from the nozzle member to prevent the processing liquid on the substrate from flowing upstream by injecting gas toward the upper surface of the substrate. A substrate processing apparatus, wherein the prevention means is configured to be capable of injecting the gas to both the substrate and the nozzle member, whereby the backflow prevention means is also used as the gas injection means.
JP2007122257A 2007-05-07 2007-05-07 Substrate processing equipment Expired - Fee Related JP4850775B2 (en)

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