JP2008072435A - Image sensor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an image sensor having high reliability capable of reading information with high S/N by decreasing the number of connections between photoelectric conversion elements and a driving circuit. <P>SOLUTION: The image sensor has, on a glass substrate 2, a plurality of photoelectric conversion element arrays 3 such that photoelectric conversion elements each comprising a photoelectric conversion layer sandwiched between a pair of an anode and a cathode and formed of an organic compound layer are arranged in array, and an IC chip 4 which detects signal charges that photoelectric conversion elements photoelectrically convert and reads the signal charges out. An ITO anode 5a of each of photoelectric conversion elements constituting a photoelectric conversion element array 3 is formed integrally with wiring 5b connected to the IC chip 4 one to one and a cathode constituting each of the photoelectric conversion elements in the photoelectric conversion element array 3 is formed of wiring 6, having a pattern connected to two or more photoelectric conversion elements in common, on the photoelectric conversion element array 3. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an image sensor that extracts various information such as an object shape and an image as an electrical signal.

  As an image sensor in a facsimile, a scanner, or the like, a contact-type linear sensor that uses only a rod lens as an optical system and can be easily miniaturized is used. This close contact type linear sensor has a sensor length equivalent to that of an original, and includes a plurality of CMOS (Complementary Metal-Oxide Semiconductor) sensor chips and CCD (Charge-Coupled Device) sensor chips formed of single crystal silicon. Composed.

In recent years, a technique capable of forming a photoelectric conversion element by an extremely simple method using an organic material has been developed for a photoelectric conversion element used in an image sensor (see, for example, Patent Document 1).
Special Table 2002-502120

  However, the above conventional techniques have the following problems.

  (1) In the case of a conventional close contact type linear sensor using a CMOS sensor chip or a CCD sensor chip formed of single crystal silicon, it is necessary to arrange a plurality of chips with high accuracy, and a portion corresponding to a joint between the chips. There was a problem that the information could not be read accurately.

  (2) If a photoelectric conversion element is formed using an organic material like the organic semiconductor image sensor described in (Patent Document 1), a photoelectric conversion element array having a predetermined size and a predetermined resolution by a very simple method. Therefore, the above problem (1) can be solved. However, there is a problem that a connection form between a photoelectric conversion element using an organic material and a driving circuit formed of a transistor such as silicon is not clarified.

  The present invention has been made in view of the above, and is an image sensor that can be read seamlessly at a predetermined arrangement pitch over a predetermined sensor length, and the connection form between the photoelectric conversion element and the drive circuit is clarified. The purpose is to provide.

  In order to solve the above-described problems, the present invention provides a plurality of photoelectric conversion elements in which photoelectric conversion elements each including an organic compound layer sandwiched between a pair of an anode and a cathode are arranged in an array. Each of the photoelectric conversion elements constituting the photoelectric conversion element array is an image sensor including an array and a drive circuit that detects a signal charge photoelectrically converted by the photoelectric conversion element and reads the signal charge. The anode is integrally formed with the wiring connected to the drive circuit on a one-to-one basis, and the cathode constituting each photoelectric conversion element in the photoelectric conversion element array is two or more photoelectric conversion elements Are formed on the photoelectric conversion element array by wiring having a pattern connected in common.

  According to the present invention, since the anode of the photoelectric conversion element and the wiring connecting the anode and the drive circuit are integrally formed on the substrate, the patterning can be easily performed, and the reliability without disconnection or short circuit is excellent. An image sensor can be provided. In addition, since the cathode is directly formed on the photoelectric conversion element, the adhesion between the photoelectric conversion element and the cathode is improved, and the photoelectric conversion efficiency of the photoelectric conversion element is improved. As a result, the signal charge can be detected with a high signal-to-noise ratio (Signal to Noise ratio). Furthermore, since the cathodes are commonly wired between the plurality of photoelectric conversion elements, the number of patterning of the cathodes of the photoelectric conversion elements can be reduced, and an effect of providing an image sensor excellent in reliability can be provided. Have.

  An image sensor according to a first aspect of the present invention includes a plurality of photoelectric conversion devices in which photoelectric conversion elements each including an organic compound layer sandwiched between a pair of anodes and cathodes are arranged in an array. An image sensor comprising an element array and a drive circuit that detects a signal charge photoelectrically converted by the photoelectric conversion element and reads the signal charge on a substrate, the anode of each photoelectric conversion element constituting the photoelectric conversion element array Is formed integrally with the wiring connected to the drive circuit in a one-to-one manner, and the cathode constituting each photoelectric conversion element in the photoelectric conversion element array is commonly connected to two or more photoelectric conversion elements. It is designed to be formed on the photoelectric conversion element array by wiring having a pattern, and the wiring connecting to the anode and the driving circuit can be patterned on the substrate at the same time, so that a predetermined size length Over no seams, also, by forming the cathode after forming the photoelectric conversion element array, with the effect that adhesion between the photoelectric conversion element array and the cathode is improved.

  In the image sensor of the second invention according to the first invention, the drive circuit is constituted by an IC chip formed of a transistor using single crystal silicon, or a thin film transistor of polycrystalline silicon or amorphous silicon. When a transistor is formed using single crystal silicon, a driving circuit with high mobility and reduced variation in threshold is obtained, and a thin film transistor is formed using polycrystalline silicon or amorphous silicon. In this case, the drive circuit can be formed directly on the substrate.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(Embodiment 1)
FIG. 1 is a plan view showing an image sensor according to Embodiment 1 of the present invention, and FIG. 2 is a sectional view thereof. In FIG. 1, 1 is an image sensor according to Embodiment 1 of the present invention, 2 is a glass substrate as a substrate of the image sensor 1, 3 is a photoelectric conversion element array of the image sensor 1 formed of an organic material, and 4 is a single crystal. An IC (Integrated Circuit) chip on which a drive circuit formed of silicon is mounted, 5 is an ITO (Indium Tin Oxide) anode as a first electrode of each photoelectric conversion element array 3, and an IC chip 4 drawn from the ITO anode A wiring 6 to be connected is an aluminum cathode (hereinafter referred to as an aluminum cathode) in which all the second electrodes of each photoelectric conversion element array 3 are shared, and a wiring for connecting to a predetermined voltage (Vref) drawn from the aluminum cathode. It is. Although not shown, the IC chip 4 includes detection means for detecting the signal charge generated by the photoelectric conversion element array 3 and signal charge reading means for reading the signal charge detected by the detection means. The photoelectric conversion element array 3 is configured such that a plurality of photoelectric conversion elements (pixels) sandwiched between a pair of ITO anodes and aluminum cathodes are arrayed on the glass substrate 2.

  In FIG. 2, 5a is an ITO anode which is the first electrode of the photoelectric conversion element array 3, 5b is a wiring connecting the ITO anode 5a and the IC chip 4, 7 is an electron donating layer made of an electron donating material, and An organic photoelectric conversion layer of a photoelectric conversion element formed of an electron-accepting layer made of an electron-accepting material, 8 is a COG (Chip On Glass) that connects the IC chip 4 with the ITO anode 5a and the wiring 5b in a one-to-one relationship. It is a mounting contact part.

  A method for manufacturing the image sensor configured as described above will be described. First, an ITO film having a thickness of 150 nm is formed on the glass substrate 2 by a sputtering method, and a resist material (for example, OFPR-800, manufactured by Tokyo Ohka Kogyo Co., Ltd.) is applied on the ITO film by a spin coating method. A 5 μm resist film is formed. Then, masking, exposure, and development are performed to pattern the resist into the shape of the ITO anode 5a and the wiring 5b.

  Thereafter, the glass substrate 2 is immersed in an aqueous hydrochloric acid solution of 18N at 60 ° C., and the ITO film where the resist film is not formed is etched and then washed with water. Finally, the resist film is removed to obtain a predetermined pattern shape. The ITO anode 5a and the wiring 5b made of the ITO film are integrally formed.

  Next, the glass substrate 2 is subjected to ultrasonic cleaning for 5 minutes with a detergent (for example, Semico Clean, manufactured by Furuuchi Chemical Co., Ltd.), ultrasonic cleaning for 10 minutes with pure water, and aqueous hydrogen peroxide against ammonia water (volume ratio). After 5 minutes of ultrasonic cleaning with a 1: 5 mixed solution of water and water and 5 minutes of ultrasonic cleaning with pure water at 70 ° C., water attached to the glass substrate 2 is removed with a nitrogen blower. Further, it is dried by heating at 250 ° C.

  Subsequently, poly (3,4) ethylenedioxythiophene / polystyrene sulphonate (PEDT / PSS) is dropped on the glass substrate 2 on which the ITO anode 5a is formed through a 0.45 μm filter, and spin coating is performed. Apply evenly. Thereafter, this is heated in a clean oven at 200 ° C. for 10 minutes to form a charge transport layer (not shown) having a thickness of 60 nm.

  Subsequently, poly (2-methoxy-5- (2′-ethylhexyloxy) -1,4-phenylenevinylene) (MEH-PPV) that functions as an electron-donating organic material and an electron-accepting material [5, 6 After spin-coating a chlorobenzene solution having a weight ratio of 1: 4 with -phenyl C61 butyric acid methyl ester ([5,6] -PCBM), it was heat-treated in a clean oven at 100 ° C. for 30 minutes, and about 100 nm The organic photoelectric conversion layer 7 is formed. Here, the organic photoelectric conversion layer 7 may be produced by any method as long as it can stably form a uniform and highly smooth thin film, such as a vacuum deposition method and a sputtering method. A vacuum process, a wet process such as a spin coating, a dipping method, and an ink jet method can be preferably used. It is possible to select any process according to the material and configuration to be used. However, when the organic photoelectric conversion layer 7 is formed by a wet process that does not require a large-scale manufacturing apparatus, mass production and low cost can be achieved. Excellent and preferred.

Finally, LiF is about 1 nm, and then aluminum is about 10 nm in a resistance heating vapor deposition apparatus reduced to a vacuum degree of 0.27 mPa (= 2 × 10 ⁻⁶ Torr) or less on the organic photoelectric conversion layer 7. The aluminum cathode and the wiring 6 are formed so as to be commonly taken out in each pixel. In this way, the seamless photoelectric conversion element array 3 having a predetermined resolution can be formed over a predetermined size in which the ITO anodes 5a are individually taken out and all the aluminum cathodes are taken out in common.

  Note that MEH-PPV is a p-type organic semiconductor, [5,6] -PCBM is an n-type organic semiconductor, and exciton electrons generated by light absorption diffuse in a conduction band to [5,6]- Holes are diffused into the PCBM and diffused into the valence band and supplied to the MEH-PPV, and these bands are conducted to the aluminum cathode and the ITO anode 5a, respectively.

  This [5,6] -PCBM is a modified fullerene, has a very high electron mobility, and in addition, a mixture with MEH-PPV, which is an electron donating material, can be used. There is an advantage that the transfer can be efficiently performed, the photoelectric efficiency is increased, and the low-cost production is possible.

  The operation of the image sensor configured as described above will be described with reference to FIG.

  FIG. 3 is a circuit diagram showing a configuration of one pixel of the image sensor according to Embodiment 1 of the present invention. In FIG. 3, 9 is an operational amplifier, 10 is a storage capacitor, 11 is a reset switch for resetting the charge stored in the storage capacitor 10, and 12 is a read switch for reading the stored voltage value. Here, the storage capacitor 10 is disposed between the inverting input terminal and the output terminal of the operational amplifier 9 and constitutes an integration circuit. Further, connection is made so that the potential of the aluminum cathode 6 of the photoelectric conversion element array 3 becomes Vref1 level, and the potential of the non-inverting force input terminal of the operational amplifier 9 becomes Vref level (where Vref1 ≧ Vref). In FIG. 3, only the detection means portion of the IC chip 4 is shown, and the signal charge read-out means portion can be omitted because it can use a conventionally known circuit.

  In FIG. 3, first, the storage capacitor 10 is reset by controlling the reset switch 11 to turn it on. At this time, the output voltage of the operational amplifier 9 is at the Vref level.

  Next, the reset switch 11 is controlled to be turned off. At this time, when incident light enters the photoelectric conversion element array 3 formed of an organic material, it is photoelectrically converted into a photocurrent, and the photocurrent is applied to the IC chip 4 on which the drive circuit is mounted via the ITO anode 5a and the wiring 5b. Flows in. In the IC chip 4, feedback is applied via the storage capacitor 10 so that the potential difference between both ends of the two input terminals becomes 0 by the operation of the operational amplifier 9, and this photocurrent is stored in the storage capacitor 10. As a result, the output level of the operational amplifier 9 changes from the Vref level in accordance with the flow rate of photoelectric flow, the capacity of the storage capacitor 10, and the storage time.

  Thereafter, when a predetermined time is reached, the read switch 12 is controlled and the output of the operational amplifier 9 is sequentially read out by the signal charge reading means of the IC chip 4. The timing of these operations is controlled by a shift register (not shown). By repeating the reset, accumulation, and readout operations as described above, information of each pixel can be captured.

  Here, a method of connecting electrodes connected to the photoelectric conversion element array 3 will be described. First, a method for connecting the ITO anode 5 of the photoelectric conversion element array 3 and the IC chip 4 will be described. A circuit for detecting the photocurrent of the pixel is formed on single crystal silicon to produce the IC chip 4, and further, a bare chip. Apply gold bumps to the IC. After that, the gold bumps of the IC chip 4 and the wiring 5b drawn from the ITO anode 5a of the glass substrate 2 are temporarily pressed onto the substrate by an ACF (Anisotropic Conductive Film) method (an anisotropic conductive film). The photoelectric conversion element array 3 and the IC chip 4 can be connected to each other by mounting by a mounting method such as a method of mounting by pressurizing and heating and press-bonding and bonding. On the other hand, the aluminum cathode of the photoelectric conversion element array 3 and the wiring 6 therefrom connect all the pixels of the photoelectric conversion element array 3 to a predetermined voltage level.

  Thus, only the ITO anode 5a of the photoelectric conversion element array 3 is individually connected to the IC chip 4 on a one-to-one basis, and after forming the organic photoelectric conversion layer 7, an aluminum cathode can be formed thereon, It becomes the structure excellent in the adhesiveness between the organic photoelectric converting layer 7 and an aluminum cathode. As a result, the image sensor 1 as a whole can be detected with high reliability and a high SN ratio.

  Further, according to the experiments by the present inventors, the photoelectric conversion efficiency is slightly inferior to the above-described configuration, but a photoelectric conversion layer may be formed on the aluminum cathode and then the ITO anode 5a may be formed. Furthermore, in the above description, the cathodes of all the photoelectric conversion elements constituting the photoelectric conversion element array 3 are commonly connected, but the cathodes of two or more photoelectric conversion elements may be commonly connected.

  In the first embodiment, the case where the present invention is applied to a linear sensor has been described. However, the image sensor of the present invention is not limited to that applied to a linear sensor, and can be similarly applied to an area sensor. Is. In this case, the signal may be read out as an XY address type using two switching transistors.

  Further, in the first embodiment, the method of integrating and detecting the photocurrent generated in the photoelectric conversion element array 3 by the IC chip 4 as described with reference to FIG. The photocurrent may be detected by a method.

  FIG. 4 is a circuit diagram showing another configuration of one pixel of the image sensor according to Embodiment 1 of the present invention. In FIG. 4, charges generated on the photoelectric conversion element array 3 side are accumulated and read out to the source follower.

  Specifically, a field effect transistor (hereinafter simply referred to as a transistor) M1 having a voltage of Vref applied to the drain, a transistor M2 having a gate connected to the source of the transistor M1, and a current from the transistor M2 are detected. And a transistor M3. Here, the aluminum cathode of the photoelectric conversion element array 3 and the wiring 6 side thereof are set to the potential of Vref2, and the drain of the transistor M1 is set to the potential of Vref.

  Here, when the gate of the transistor M1 is turned on, the voltage of Vref is applied to the gate of the transistor M2, and when the gate of the transistor M3 is also turned on, the source of the transistor M3 corresponds to Vref. Output current Is is output. On the other hand, when the gate of the transistor M1 is in the off state, the potential generated by the accumulation of photocurrent generated by the incidence of light in the photoelectric conversion element array 3 is applied to the gate of the transistor M2, and the gate of the transistor M3 is in the on state. In this case, an output current corresponding to the voltage applied to the gate of the transistor M2 flows from the source of the transistor M3, and signal charges are read by a subsequent circuit (not shown) using this output current.

  Moreover, in this Embodiment 1, although the glass substrate 2 was used as a board | substrate, as long as it can support the 1st electrode (ITO anode 5a), the organic photoelectric converting layer 7, and the 2nd electrode (aluminum cathode), what In addition to the glass substrate 2, polyethylene terephthalate, polycarbonate, polymethyl methacrylate, polyether sulfone, polyvinyl fluoride, polypropylene, polyethylene, polyacrylate, amorphous polyolefin, fluorine resin, etc. Various polymer materials, and various metal materials such as silicon wafers can be used.

  Examples of the electron donating material for forming the organic photoelectric conversion layer 7 include phenylene vinylene and derivatives thereof, fluorene and derivatives thereof, particularly fluorene copolymers having a quinoline group or a pyridine group in the skeleton (P0F66, P1F66, PFPV), fluorene. Containing arylamine polymers, carbazole and derivatives thereof, indole and derivatives thereof, pyrene and derivatives thereof, pyrrole and derivatives thereof, picoline and derivatives thereof, thiophene and derivatives thereof, acetylene and derivatives thereof, diacetylene and derivatives thereof as repeating units Polymers, copolymers with other monomers, and a group of polymeric materials collectively referred to as dendrimers can be used.

  In addition to polymer materials, for example, porphyrin compounds such as porphine, tetraphenylporphine copper, phthalocyanine, copper phthalocyanine, titanium phthalocyanine oxide, 1,1-bis {4- (di-P-tolylamino) phenyl} cyclohexane, 4,4 ′, 4 ″ -trimethyltriphenylamine, N, N, N ′, N′-tetrakis (P-tolyl) -P-phenylenediamine, 1- (N, N-di-P-tolylamino) naphthalene 4,4′-bis (dimethylamino) -2-2′-dimethyltriphenylmethane, N, N, N ′, N′-tetraphenyl-4,4′-diaminobiphenyl, N, N′-diphenyl- Aromatic tertiary amino such as N, N′-di-m-tolyl-4,4′-diaminobiphenyl, N-phenylcarbazole And stilbene compounds such as 4-di-P-tolylaminostilbene, 4- (di-P-tolylamino) -4 ′-[4- (di-P-tolylamino) styryl] stilbene, triazole and derivatives thereof, oxazizazole And derivatives thereof, imidazole and derivatives thereof, polyarylalkanes and derivatives thereof, pyrazolines and derivatives thereof, pyrazolone and derivatives thereof, phenylenediamine and derivatives thereof, annealed amines and derivatives thereof, amino-substituted chalcones and derivatives thereof, oxazoles and derivatives thereof, Styrylanthracene and its derivatives, fluorenone and its derivatives, hydrazone and its derivatives, silazane and its derivatives, polysilane-based aniline-based copolymer, polymer oligomer, styrylamine compound It can be used an aromatic dimethylidene type compound, also as poly 3-methylthiophene.

  Moreover, as an electron-accepting material which forms the organic photoelectric converting layer 7, oxadiazole, such as 1, 3-bis (4-tert- butylphenyl- 1,3,4- oxadiazolyl) phenylene (OXD-7), and its Derivatives, anthraquinodimethane and its derivatives, diphenylquinone and its derivatives, fullerene and its derivatives, in particular PCBM ([6,6] -phenyl C61 butyric acid methyl ester) carbon nanotubes and their derivatives, etc. are used.

As the first electrode (anode) provided under the organic photoelectric conversion layer 7, in addition to ITO used in the first embodiment, ATO (Sb-doped SnO ₂ ), AZO (Al-doped ZnO), etc. The transparent electrode can be used. Furthermore, it is possible to impart light transparency by forming the material with a light transmissive material such as a metal thin film such as Al, Ag, or Au. Thereby, a light-transmitting light-receiving part can also be provided.

  Further, as the second electrode (cathode) provided on the organic photoelectric conversion layer 7, in addition to Al used in the first embodiment, Ag, Au, Cr, Cu, In, Mg, Ni, Si, Ti, etc. It is possible to use a thin film such as a metal of Mg, Mg alloy such as Mg—Ag alloy or Mg—In alloy, or Al alloy such as Al—Li alloy, Al—Sr alloy or Al—Ba alloy. Furthermore, in order to improve the short-circuit current, a method of introducing a thin film such as a metal oxide or a metal fluoride such as LiF between the organic photoelectric conversion layer 7 and the second electrode is also preferably used. Furthermore, it is also possible to use ITO, ATO, AZO or the like as the second electrode (cathode).

  Further, a polymer layer such as PEDOT: PSS (a mixture of polythiophene and polystyrene sulfonic acid) is provided between the first electrode (anode) or the second electrode (cathode) and the organic photoelectric conversion layer 7 as necessary. A device configuration in which an inorganic material such as silicon, titania, alumina, carbon, or zirconia is introduced as a leakage current blocking layer can also be suitably used.

  According to the first embodiment, since the anode of the photoelectric conversion element array 3 and the terminal of the driving circuit are connected on the glass substrate 2 by a one-to-one wiring, patterning can be easily performed and reliability without disconnection or short circuit can be achieved. It is possible to provide an image sensor excellent in performance. In addition, since the cathode is formed directly on the photoelectric conversion element array 3, the adhesion between the photoelectric conversion element array 3 and the cathode is improved, and the photoelectric conversion efficiency of the photoelectric conversion element is improved. This also has the effect that it can be detected. Furthermore, since the cathodes of two or more photoelectric conversion elements constituting the photoelectric conversion element array 3 are commonly connected, there is also an effect that the number of cathode patterning can be reduced.

  In addition, since the IC chip 4 is formed of a single crystal silicon transistor, the mobility is high and high speed operation is possible, the variation in threshold is small, the performance is uniform, and the quality within and between individuals is high. Variations can be reduced. As a result, an image sensor having excellent reliability and practicality can be provided.

(Embodiment 2)
FIG. 5 is a plan view showing the arrangement of photoelectric conversion elements and drive circuits of the image sensor according to Embodiment 2 of the present invention. In FIG. 5, reference numeral 4 a denotes a drive circuit composed of thin film transistors that are collectively formed on the glass substrate 2 with polycrystalline silicon or amorphous silicon that drives the photoelectric conversion element array 3. Other configurations are basically the same as those of the first embodiment shown in FIG.

  According to such a configuration, unlike the first embodiment, since it is not necessary to barely mount the IC chip 4 on which the drive circuit formed of single crystal silicon is mounted, the highly reliable image sensor 1a is further inexpensive. Can be produced.

  According to the image sensor of the second embodiment, in addition to the effects of the first embodiment, the silicon transistor constituting the drive circuit is formed of a thin film transistor of polycrystalline silicon or amorphous silicon. There is no need to mount an IC chip on the chip. In addition, since single crystal silicon is not used, it has the effect of being inexpensive and excellent in mass productivity. Furthermore, since the wiring distance between the photoelectric conversion element array 3 and the drive circuit 4a is shorter than when the IC chip 4 is used as the drive circuit, the influence of noise from the outside is suppressed, and a high SN ratio is ensured. The signal charge can be detected. As a result, an image sensor excellent in reliability and practicality can be provided.

  As described above, the image sensor according to the present invention is useful for scanners, fax machines, and the like that extract various types of information such as object shapes and images as electrical signals.

1 is a plan view of an image sensor according to Embodiment 1 of the present invention. Sectional drawing of the image sensor in Embodiment 1 of this invention 1 is a circuit diagram showing a configuration of one pixel of an image sensor according to Embodiment 1 of the present invention. The circuit diagram which shows the other structure of one pixel of the image sensor in Embodiment 1 of this invention The top view which shows arrangement | positioning of the photoelectric conversion element and drive circuit of the image sensor in Embodiment 2 of this invention

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,1a Image sensor 2 Glass substrate 3 Photoelectric conversion element array 4 IC chip 4a Drive circuit 5 ITO anode and wiring connected to it 5a ITO anode 5b wiring 6 Aluminum cathode and wiring connected to it 7 Organic photoelectric conversion layer 8 COG mounting Connection unit 9 Operational amplifier 10 Storage capacitor 11 Reset switch 12 Read switch

Claims (2)

A plurality of photoelectric conversion element arrays in which photoelectric conversion elements constituted by photoelectric conversion layers formed of organic compound layers sandwiched between a pair of anodes and cathodes are arranged in an array;
A driving circuit for detecting the signal charge photoelectrically converted by the photoelectric conversion element and reading the signal charge;
An image sensor provided on a substrate,
The anode of each photoelectric conversion element constituting the photoelectric conversion element array is formed integrally with a wiring connected to the drive circuit on a one-to-one basis, and each photoelectric conversion element in the photoelectric conversion element array The image sensor is characterized in that the cathode constituting the electrode is formed on the photoelectric conversion element array by wiring having a pattern commonly connected to two or more photoelectric conversion elements. The image sensor according to claim 1, wherein the drive circuit includes an IC chip formed of a transistor using single crystal silicon, or a thin film transistor of polycrystalline silicon or amorphous silicon.

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