JP2007279201A - Method for manufacturing liquid crystal device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a liquid crystal device which is hardly affected by hydroxyl groups of an inorganic alignment layer surface and is superior in light resistance and moisture resistance. <P>SOLUTION: The method for manufacturing the liquid crystal device which has liquid crystal held between a pair of substrates disposed opposite each other includes an alignment layer forming stage of forming inorganic alignment layers 16 on liquid crystal sides of the pair of substrates 10, a silane coupling processing stage of processing surfaces of the inorganic alignment layers 16 by using a silane coupling agent, a silicone polymer layer forming stage of forming silicone polymer layers 18 on the surfaces of the inorganic alignment layers 16 after the silane coupling processing, and a crosslinking reaction stage of subjecting the silicone polymer layers 18 to crosslinking reaction. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a liquid crystal device.

  A liquid crystal device used as a light modulation unit of a projection display device such as a liquid crystal projector is configured by sealing a liquid crystal between a pair of substrates. Electrodes are formed on the inner surfaces of the pair of substrates, and an alignment film for controlling the alignment of liquid crystal molecules is formed on the inner surfaces of these electrodes. With such a configuration, the liquid crystal device modulates the light source light based on the change in the orientation of the liquid crystal molecules when the non-selection voltage is applied and when the selection voltage is applied, and emits image light to the viewer side.

  By the way, as the above-mentioned alignment film, a film obtained by subjecting the surface of a polymer film made of polyimide or the like to which a side chain alkyl group is added to a rubbing treatment is generally used. The rubbing treatment is to orient the polymer in a predetermined direction by rubbing the surface of the polymer film in a predetermined direction with a roller made of a soft cloth. Due to the intermolecular interaction between the alignment polymer and the liquid crystal molecules, the liquid crystal molecules are arranged along the alignment polymer, so that the liquid crystal molecules are aligned in a predetermined direction when a non-selective voltage is applied and pretilt to the liquid crystal molecules. Can be given.

  However, when a liquid crystal device including such an organic alignment film is employed as a light modulation unit of a projector, the alignment film may be gradually decomposed by strong light or heat emitted from a light source. Then, after a long period of use, there is a risk that the liquid crystal molecule alignment control function will be degraded, such as the liquid crystal molecules being unable to align at the desired pretilt angle, and the display quality of the liquid crystal projector will be degraded.

Therefore, the use of an alignment film made of an inorganic material having excellent light resistance and heat resistance has been proposed. As a method for producing such an inorganic alignment film, for example, a silicon oxide (SiO ₂ ) film formed by oblique deposition is used. Film formation is known.

However, when the alignment film is formed of SiO _2, many polarized hydroxyl groups exist on the surface of the alignment film. Since this hydroxyl group has a high affinity with water, there is a problem that a liquid crystal molecule and moisture are adsorbed and a chemical reaction is caused, thereby causing a display abnormality.

Therefore, as a method for removing hydroxyl groups on the alignment film surface, a method is known in which the alignment film surface is treated with an alcohol treatment or a silane coupling agent.
For example, Patent Document 1 discloses a process in which an inorganic alignment film made of SiO ₂ is formed on a substrate by oblique deposition, and the surface of the formed alignment film is exposed to a vapor of a linear higher alcohol, for example, octadecanol. A method for removing the hydroxyl group on the surface of the alignment film subjected to is disclosed.
JP-A-11-160711

  However, the hydroxyl group removal method disclosed in Patent Document 1 cannot remove all hydroxyl groups on the alignment film surface, and a sufficient effect cannot be obtained. Further, since the alcohol having a long straight chain and the silane coupling agent are bonded alone on the surface of the alignment film, there is a problem that the stability of the surface of the alignment film is deteriorated.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for manufacturing a liquid crystal device that is extremely less affected by hydroxyl groups on the surface of an inorganic alignment film and that has excellent light resistance and moisture resistance. .

In order to solve the above-described problems, the present invention provides a method for manufacturing a liquid crystal device in which liquid crystal is sandwiched between a pair of opposed substrates, and an inorganic alignment film is provided on each liquid crystal side of the pair of substrates. Forming an alignment film; a silane coupling process for treating the surface of the inorganic alignment film with a silane coupling agent; and a silicone polymer film on the surface of the inorganic alignment film subjected to the silane coupling process. Forming a silicone polymer film; and
And a crosslinking reaction step of crosslinking the silicone polymer film.

In the alignment film forming step of the present invention, when an inorganic alignment film is formed on the substrate, the inorganic alignment film adsorbs moisture in the atmosphere, so that hydroxyl groups are formed on the surface of the inorganic alignment film.
According to the present invention, first, in the silane coupling treatment step, the hydroxyl group on the surface of the inorganic alignment film reacts with the silane coupling agent, and the hydroxyl group on the surface of the inorganic alignment film is removed. At this time, all hydroxyl groups on the surface of the inorganic alignment film cannot be removed, and some hydroxyl groups remain.
Next, in the formation step and the crosslinking reaction step of the silicone polymer film, the hydroxyl group remaining on the surface of the inorganic alignment film and the surface of the silicone polymer film are formed by the crosslinking reaction of the silicone polymer film formed on the surface of the inorganic alignment film. The hydroxyl groups formed react to remove the hydroxyl groups formed on these surfaces.
As described above, after the surface of the inorganic alignment film is subjected to the silane coupling treatment, the influence of the hydroxyl group present on the surface of the inorganic alignment film can be suppressed by further forming a silicone polymer and performing a crosslinking reaction. Therefore, an inorganic alignment film excellent in light resistance and moisture resistance can be formed.

  The method for producing a liquid crystal device of the present invention preferably further includes a trimethylsilylation treatment step of treating the surface of the inorganic alignment film and the surface of the silicone polymer film with a trimethylsilylating agent after the crosslinking reaction step.

After the cross-linking reaction step, it is possible to remove hydroxyl groups on the surface of the inorganic alignment film as compared with the conventional method, but in the method up to the cross-linking reaction step, some hydroxyl groups may remain on the surface of the inorganic alignment film. is there.
According to this method, after the cross-linking reaction step, by further providing a step of trimethylsilylation treatment, the surface of the inorganic alignment film and the surface of the silicone polymer film remaining after the cross-linking reaction and the trimethylsilyl agent It reacts chemically. Thereby, the hydroxyl group on the surface of the inorganic alignment film and the surface of the silicone polymer film can be removed.

  In the method for producing a liquid crystal device of the present invention, it is also preferable that a material having two or more hydrosilyl groups is used for the silicone polymer film in the silicone polymer film forming step, and a crosslinking reaction is performed by a steam treatment in the crosslinking reaction step.

  According to this method, the silicone polymers undergo a crosslinking reaction by steam treatment. Hydrosilyl groups remain in the silicone polymer film after this reaction, but the hydrosilyl groups react with water vapor and change into silanol groups. And this silanol group reacts with the hydroxyl group formed on the surface of the inorganic alignment film. In this way, the influence of hydroxyl groups on the surface of the inorganic alignment film can be reduced.

  In the method for producing a liquid crystal device according to the present invention, the silicone polymer film is preferably formed by a CVD method.

  According to this method, the silicone polymer film is formed by the CVD method (vapor phase method), so that the diffusibility and adsorption of the silicone polymer material on the surface of the inorganic alignment film are compared with other methods (liquid phase method). And improve. Therefore, the hydroxyl group on the surface of the inorganic alignment film can be removed more efficiently.

  In the method for manufacturing a liquid crystal device of the present invention, it is also preferable that the inorganic alignment film is formed by oblique deposition.

When the inorganic alignment film is formed by oblique vapor deposition, the inorganic alignment film is composed of a plurality of columnar structures inclined at a certain angle. When liquid crystal molecules are arranged on the surface of the inorganic alignment film, a pretilt angle in a certain direction can be given to the liquid crystal molecules without performing a rubbing treatment.
When the silicone polymer film is formed on the surface of such an inorganic alignment film, since the silicone polymer film is a monomolecular film, the surface of the silicone polymer film reflects the uneven shape of the surface of the inorganic alignment film. Therefore, even when a silicone polymer film is formed on the surface of the inorganic alignment film, a pretilt angle in a certain direction can be imparted to the liquid crystal molecules without performing a rubbing treatment.

  Embodiments of the present invention will be described below with reference to the drawings. In each drawing used for the following description, the scale of each member is appropriately changed to make each member a recognizable size.

  FIG. 1 is a plan view of a TFT substrate 10 for explaining a schematic configuration of a liquid crystal device 60 according to an embodiment of the present invention, FIG. 2 is an equivalent circuit diagram of the liquid crystal device, and FIG. 3 is a plan view of the liquid crystal device. FIG. 4 is an explanatory diagram of the structure, and FIG. 4 is an explanatory diagram of a cross-sectional structure of the liquid crystal device 60, and is a cross-sectional view taken along the line AA ′ in FIG.

  As shown in FIG. 4, the liquid crystal device 60 is configured such that a liquid crystal 50 is sandwiched between a pair of substrates 10 and 20 that are arranged to face each other. As shown in FIG. 1, an image production region 101 is formed at the center of the TFT array substrate (substrate) 10 which is one of the pair of substrates 10 and 20. A sealing material 19 is disposed on the peripheral edge of the image production region 101, and thereby the liquid crystal 50 (see FIG. 4) is sealed in the image production region 101. The liquid crystal 50 is formed by directly applying a liquid crystal on the TFT substrate 10, and has a so-called sealing-less structure in which the sealing material 19 is not provided with a liquid crystal injection port. A scanning line driving element 110 that supplies a scanning signal to a scanning line, which will be described later, and a data line driving element 120, which supplies an image signal to a data line, which will be described later, are mounted outside the sealing material 19. A wiring 76 is routed from the driving elements 110 and 120 to the connection terminal 79 at the end of the TFT substrate 10.

On the other hand, a common electrode 21 (see FIG. 4) is formed on the counter substrate 20 (see FIG. 4) bonded to the TFT substrate 10. The common electrode 21 is formed over almost the entire image forming region 101, and inter-substrate conducting portions 70 are provided at the four corners. A wiring 78 is routed from the inter-substrate conduction portion 70 to the connection terminal 79.
Then, various signals input from the outside are supplied to the image production region 101 via the connection terminals 79, so that the liquid crystal device is driven.

  In the image production area 101 of the liquid crystal device, as shown in the equivalent circuit diagram of FIG. 2, a plurality of dots are arranged in a matrix to constitute this, and each of these dots has a pixel electrode 9. Is formed. Further, on the side of the pixel electrode 9, a TFT element 30 which is a switching element for performing energization control to the pixel electrode 9 is formed. A data line 6 a is connected to the source of the TFT element 30. Image signals S1, S2,..., Sn are supplied to the data lines 6a from the data line driving elements described above.

  A scanning line 3 a is connected to the gate of the TFT element 30. Scanning signals G1, G2,..., Gm are supplied to the scanning line 3a in a pulsed manner from the scanning line driving element described above at a predetermined timing. On the other hand, the pixel electrode 9 is connected to the drain of the TFT element 30. When the TFT elements 30 serving as switching elements are turned on for a certain period by the scanning signals G1, G2,..., Gm supplied from the scanning line 3a, the image signals S1, S2,. Sn is written to the liquid crystal of each dot via the pixel electrode 9 at a predetermined timing.

  The predetermined level image signals S1, S2,..., Sn written in the liquid crystal are held for a certain period by a liquid crystal capacitor formed between the pixel electrode 9 and a common electrode described later. In order to prevent leakage of the held image signals S1, S2,..., Sn, a storage capacitor 17 is formed between the pixel electrode 9 and the capacitor line 3b, and is arranged in parallel with the liquid crystal capacitor. . Thus, when a voltage signal is applied to the liquid crystal, the alignment state of the liquid crystal molecules changes depending on the applied voltage level. Thereby, the light source light incident on the liquid crystal is modulated to produce image light.

  In the liquid crystal device of this embodiment, as shown in the plan view of FIG. 3, a rectangular array made of a transparent conductive material such as indium tin oxide (hereinafter referred to as ITO) is formed on the TFT array substrate. Shaped pixel electrodes 9 (the outlines of which are indicated by broken lines 9a) are arranged in a matrix. Further, data lines 6a, scanning lines 3a, and capacitor lines 3b are provided along the vertical and horizontal boundaries of the pixel electrodes 9. In the present embodiment, the rectangular area in which each pixel electrode 9 is formed is a dot, and the display can be performed for each dot arranged in a matrix.

  The TFT element 30 is formed around a semiconductor layer 1a made of a polysilicon film or the like. A data line 6 a is connected to a source region (described later) of the semiconductor layer 1 a through a contact hole 5. Further, a pixel electrode 9 is connected to a drain region (described later) of the semiconductor layer 1 a through a contact hole 8. On the other hand, a channel region 1a 'is formed in a portion of the semiconductor layer 1a facing the scanning line 3a.

  Further, as shown in the cross-sectional structure explanatory diagram of FIG. 4, this liquid crystal device is mainly configured by a TFT substrate 10, a counter substrate 20 disposed so as to face the TFT substrate 10, and a liquid crystal 50 sandwiched therebetween. ing. The TFT substrate 10 is mainly composed of a substrate body 10A made of a light-transmitting material such as glass or quartz, a TFT element 30, a pixel electrode 9, an alignment film 16 and the like formed inside thereof. One counter substrate 20 is mainly composed of a substrate body 20A made of a light-transmitting material such as glass or quartz, and a common electrode 21 and an alignment film 22 formed inside thereof.

  A first light shielding film 11 a and a first interlayer insulating film 12 are formed on the surface of the TFT substrate 10. A semiconductor layer 1a is formed on the surface of the first interlayer insulating film 12, and a TFT element 30 is formed around the semiconductor layer 1a. A channel region 1a 'is formed in a portion of the semiconductor layer 1a facing the scanning line 3a, and a source region and a drain region are formed on both sides thereof. Since this TFT element 30 adopts an LDD (Lightly Doped Drain) structure, a high concentration region having a relatively high impurity concentration and a relatively low concentration region (LDD region) are respectively provided in the source region and the drain region. And are formed. That is, a low concentration source region 1b and a high concentration source region 1d are formed in the source region, and a low concentration drain region 1c and a high concentration drain region 1e are formed in the drain region.

  A gate insulating film 2 is formed on the surface of the semiconductor layer 1a. A scanning line 3a is formed on the surface of the gate insulating film 2, and a portion facing the channel region 1a 'constitutes a gate electrode. A second interlayer insulating film 4 is formed on the surfaces of the gate insulating film 2 and the scanning line 3a. A data line 6a is formed on the surface of the second interlayer insulating film 4, and the data line 6a is connected to the high-concentration source region 1d through a contact hole 5 formed in the second interlayer insulating film 4. . Further, a third interlayer insulating film 7 is formed on the surfaces of the second interlayer insulating film 4 and the data line 6a. A pixel electrode 9 is formed on the surface of the third interlayer insulating film 7, and the pixel electrode 9 is a high-concentration drain through a contact hole 8 formed in the second interlayer insulating film 4 and the third interlayer insulating film 7. It is connected to the area 1e. Further, an inorganic alignment film 16 is formed so as to cover the pixel electrode 9, and the alignment of liquid crystal molecules when a non-selection voltage is applied is regulated.

In the present embodiment, the first storage capacitor electrode 1f is formed by extending the semiconductor layer 1a. Further, the gate insulating film 2 is extended to form a dielectric film, and the capacitor line 3b is disposed on the surface thereof to form a second storage capacitor electrode. Thus, the above-described storage capacitor 17 is configured.
A first light shielding film 11 a is formed on the surface of the substrate body 10 </ b> A corresponding to the formation region of the TFT element 30. The first light shielding film 11a prevents light incident on the liquid crystal device from entering the channel region 1a ′, the low concentration source region 1b, and the low concentration drain region 1c of the semiconductor layer 1a.

  On the other hand, a second light shielding film 23 is formed on the surface of the substrate body 20A in the counter substrate 20. The second light shielding film 23 prevents light incident on the liquid crystal device from entering the channel region 1a ′, the low concentration source region 1b, the low concentration drain region 1c, and the like of the semiconductor layer 1a. It is provided in a region overlapping with the layer 1a. A common electrode 21 made of a conductor such as ITO is formed on the surface of the counter substrate 20 over substantially the entire surface. Furthermore, an inorganic alignment film 22 is formed on the surface of the common electrode 21 so that the alignment of liquid crystal molecules when a non-selection voltage is applied is regulated.

  Here, both the inorganic alignment film 16 on the TFT substrate 10 side and the inorganic alignment film 22 on the counter substrate 20 side are characteristic components of the present invention. That is, the inorganic alignment films 16 and 22 are subjected to silane coupling treatment, and a silicone polymer film is formed on the surface. Thereafter, a crosslinking reaction and a trimethylsilylation treatment are sequentially performed, and the influence of OH groups generated on the surfaces of the inorganic alignment films 16 and 22 is suppressed.

(Manufacturing method of liquid crystal device)
FIGS. 5A to 5D are cross-sectional views showing steps of forming an inorganic alignment film of the liquid crystal device, and FIG. 6 is a schematic configuration diagram of a vapor deposition apparatus for forming the inorganic alignment film. In the following description, only the inorganic alignment film 16 formed on the TFT substrate 10 will be described, and the inorganic alignment film 22 of the counter substrate 20 is formed by the same process as the inorganic alignment film 16, so that the description will be given. Omitted.

  First, as shown in FIG. 5A, the inorganic alignment film 16 is formed on the TFT substrate 10 on which the TFT is formed by the oblique vapor deposition method.

Here, the structure of the vapor deposition apparatus 40 which forms the inorganic alignment film 16 is demonstrated.
The vapor deposition apparatus 40 includes a vapor deposition source 512 that generates a vapor flow of the inorganic alignment film material, and a holding mechanism 514 that holds the TFT substrate 10. In the TFT substrate 10, an angle θ 0 formed by a reference line X 1 connecting the vapor deposition source 512 and the position of the center of gravity of the substrate surface of the TFT substrate 10 and a straight line X 2 perpendicular to the film formation surface of the TFT substrate 10 becomes a predetermined value. In this manner, the holding mechanism 514 holds. Therefore, the traveling direction of the inorganic material generated by the vapor deposition source 512, that is, the direction in which the inorganic material flies, and the substrate on which the alignment film is formed on the TFT substrate 10 are indicated by the arrow Y1 in FIGS. The angle θ1 formed with the surface (deposition surface) can be adjusted by changing the angle θ0. The angle θ1 is set to a predetermined value for arranging columnar structures to be described later on the substrate surface so that a surface shape effect for performing alignment control in the inorganic alignment film 16 can be obtained. However, in this embodiment, since oblique deposition is performed, the angle θ1 is less than 90 °.

  When oblique vapor deposition is performed on the TFT array substrate using the vapor deposition apparatus 40, the alignment film material sublimated from the vapor deposition source 512 has a constant incident angle (with respect to the TFT substrate 10) as indicated by an arrow in FIG. Incident angle). As a result, as shown in FIG. 5A, the alignment film material is deposited in an oblique column shape on the TFT substrate 10, and a columnar structure of an inorganic material (silicon oxide) is formed. As described above, the inorganic alignment film 16 is composed of an infinite number of columnar structures formed on the surface of the TFT substrate 10. At this time, since the inorganic alignment film 16 made of a metal material adsorbs moisture in the atmosphere, a large number of polarized OH groups are formed on the surface of the inorganic alignment film 16 as shown in FIG.

Next, as shown in FIG. 5B, the surface of the inorganic alignment film 16 is subjected to silane coupling treatment (dealcoholization reaction) by a vapor phase method. Specifically, after the TFT substrate 10 on which the inorganic alignment film 16 is formed is transported into the CVD apparatus, octadecyltrimethoxylane is introduced into the CVD apparatus. At this time, the temperature in the CVD apparatus is set to 150 ° C.
Thereby, the vapor | steam of a silane coupling agent reacts with the OH group on the surface of the inorganic alignment film 16, and the OH group on the surface of the inorganic alignment film 16 is removed. However, since the silane coupling agent has a long straight chain, it hardly reacts with all OH groups on the surface of the inorganic alignment film 16 due to steric hindrance. Therefore, a part of the OH groups remains on the surface of the inorganic alignment film 16 as shown in FIG.
Subsequently, the TFT substrate 10 that has been subjected to the silane coupling treatment is washed with toluene and methanol in this order, and then the surface of the inorganic alignment film 16 is dried at 60 to 150 ° C.

Next, as shown in FIG. 5C, a silicone polymer film 18 is formed on the surface of the inorganic alignment film 16 subjected to the silane coupling process by a CVD method (vapor phase method). Specifically, first, the TFT substrate 10 subjected to the silane coupling treatment is transferred into the CVD apparatus. Then, 1,3,5,7-tetramethylcyclotetrasiloxane having two or more SiH groups (hydrosilyl groups) is introduced into the CVD apparatus. At this time, the temperature in the CVD apparatus is set to about 250 ° C. Thereby, as shown in FIG. 5C, the surface of the inorganic alignment film 16 in which the plurality of OH groups remain is covered with the silicone polymer film 18. Note that, as shown in FIG. 5C, fine holes 18a are formed in the silicone polymer film 18 due to the influence during film formation.
Subsequently, after the TFT substrate 10 on which the silicone polymer film 18 is formed is sequentially washed with chloroform and methanol, the surface of the silicone polymer film 18 is dried at 60 to 150 ° C.
Since the silicone polymer film 18 covering the surface of the inorganic alignment film 16 is a monomolecular film, the surface of the silicone polymer film 18 has a shape reflecting the irregularities of the plurality of columnar structures of the underlying inorganic alignment film 16. . Therefore, even when the silicone polymer film 18 is formed on the surface of the inorganic alignment film 16, the liquid crystal molecules can be aligned with a pretilt angle in a certain direction.

Next, as shown in FIG. 5C, the silicone polymer film 18 is subjected to a crosslinking reaction (dealcoholization reaction). The crosslinking reaction is performed by introducing water vapor using pure water (H ₂ O) or an aqueous solution containing 1% ammonia into the apparatus. As a result, the silicone polymers undergo a crosslinking reaction, but some SiH groups remain in the silicone polymer film 18. This remaining SiH group reacts with water vapor in the apparatus and changes to a Si—OH group (silanol group). Then, the Si—OH group in the silicone polymer film 18 undergoes a dehydration condensation reaction with the OH group on the surface of the inorganic alignment film 16 to remove the OH group on the surface of the inorganic alignment film. At this time, the unreacted Si—OH group in the silicone polymer film 18 remains on the surface of the silicone polymer film 18 as shown in FIG. Further, some OH groups remain on the surface of the inorganic alignment film 16 in the fine pores 18a not covered with the silicone polymer film 18.

Next, as shown in FIG. 5D, the surface of the silicone polymer film 18 is trimethylated. Specifically, first, after the TFT substrate 10 on which the silicone polymer film 18 is formed is transported into the CVD apparatus, trimethylmethoxysilane is introduced into the CVD apparatus. As a result, as shown in FIG. 5D, trimethylmethoxysilane is adsorbed and chemically reacted with the Si—OH groups remaining on the surface of the silicone polymer film 18 to remove the OH groups on the surface of the silicone polymer film 18. .
Further, since the straight chain of trimethylmethoxysilane is short, trimethylmethoxysilane enters from the micropores 18 a of the silicone polymer film 18 and is adsorbed on the unreacted OH groups on the surface of the inorganic alignment film 16. Thereby, trimethylmethoxysilane and the OH group cause a chemical reaction, and the OH group on the surface of the inorganic alignment film 16 is removed.
In this way, OH groups on the surface of the inorganic alignment film 16 and the surface of the silicone polymer film 18 can be removed.

  According to this embodiment, first, in the silane coupling treatment step, the OH group on the surface of the inorganic alignment film 16 reacts with the silane coupling agent, and the OH group on the surface of the inorganic alignment film 16 is removed. At this time, all OH groups on the surface of the inorganic alignment film 16 cannot be removed, and some OH groups remain. Next, in the step of forming the silicone polymer film 18 and the crosslinking reaction step, the OH group remaining on the surface of the inorganic alignment film 16 and the silicone polymer in the crosslinking reaction of the silicone polymer film 18 formed on the surface of the inorganic alignment film 16 The OH groups formed on the surfaces of the film 18 react to remove the OH groups formed on these surfaces. As described above, after the surface of the inorganic alignment film 16 is subjected to the silane coupling treatment, the silicone polymer is further formed to cause a crosslinking reaction, thereby stably suppressing the influence of OH groups existing on the surface of the inorganic alignment film 16. can do. Therefore, the inorganic alignment film 16 excellent in light resistance and moisture resistance can be formed.

  Further, according to the present embodiment, after the crosslinking reaction step, it is possible to remove OH groups on the surface of the inorganic alignment film 16 as compared with the conventional method. However, in the method up to the crosslinking reaction step, the inorganic alignment film is used. There may be some OH groups remaining on the surface of 16. Therefore, by providing the trimethylsilylation treatment after the crosslinking reaction, the unreacted OH groups on the surface of the inorganic alignment film 16 and the surface of the silicone polymer film 18 remaining after the crosslinking reaction chemically react with the trimethylsilyl agent. Thereby, OH groups on the surface of the inorganic alignment film 16 and the surface of the silicone polymer film 18 can be further removed.

  Furthermore, according to the present embodiment, the silicone polymer film 18 is formed by the CVD method (gas phase method), so that the diffusibility and the adsorptivity of the silicone polymer material with respect to the surface of the inorganic alignment film 16 are different from each other (liquid Improved compared to the phase method). Therefore, OH groups on the surface of the inorganic alignment film 16 can be removed more efficiently.

(projector)
Next, a projector as an embodiment of the electronic apparatus of the invention will be described with reference to FIG. FIG. 7 is a schematic configuration diagram showing a main part of the projector. This projector includes the liquid crystal device 60 according to the above-described embodiment as light modulation means.

  7, 810 is a light source, 813 and 814 are dichroic mirrors, 815, 816 and 817 are reflection mirrors, 818 is an entrance lens, 819 is a relay lens, 820 is an exit lens, and 822, 823 and 824 are liquid crystal devices of the present invention. 825 is a cross dichroic prism, and 826 is a projection lens. The light source 810 includes a lamp 811 such as a metal halide and a reflector 812 that reflects the light of the lamp.

  The dichroic mirror 813 transmits red light included in white light from the light source 810 and reflects blue light and green light. The transmitted red light is reflected by the reflection mirror 817 and is incident on the light modulation means 822 for red light. The green light reflected by the dichroic mirror 813 is reflected by the dichroic mirror 814 and is incident on the light modulating means 823 for green light. Further, the blue light reflected by the dichroic mirror 813 passes through the dichroic mirror 814. For blue light, in order to prevent light loss due to a long optical path, a light guide means 821 including a relay lens system including an incident lens 818, a relay lens 819, and an exit lens 820 is provided. Blue light is incident on the light modulating means 824 for blue light through the light guiding means 821.

  The three color lights modulated by the respective light modulation means 822, 823, and 824 are incident on the cross dichroic prism 825. The cross dichroic prism 825 is formed by bonding four right-angle prisms. A dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are formed in an X shape at the interface. Yes. These dielectric multilayer films combine the three color lights to form light representing a color image. The synthesized light is projected onto the screen 827 by the projection lens 826 which is a projection optical system, and the image is enlarged and displayed.

  According to the projector according to the present embodiment, since the liquid crystal device 60 having the inorganic alignment film excellent in light resistance and heat resistance is provided, the alignment film is not deteriorated by strong light or heat irradiated from the light source. . Further, according to this projector, since the liquid crystal device that reliably prevents the deterioration of the liquid crystal due to moisture (humidity) is provided and has a long life, the electronic device itself has also a long life. It will be highly reliable.

It should be noted that the technical scope of the present invention is not limited to the above-described embodiments, and includes those in which various modifications are made to the above-described embodiments without departing from the spirit of the present invention.
For example, in the above embodiment, the silane coupling process, the formation of the silicone polymer film, and the trimethylation process are performed by the CVD method (vapor phase method). On the other hand, you may perform each said process by a liquid phase method.
Specifically, with respect to the silane coupling process, the TFT substrate 10 is immersed in a mixed solution of octadecyltrimethoxysilane and a hydrocarbon solvent (for example, toluene), and a heating reflux process is performed. Thereafter, the TFT substrate 10 is washed in the order of hydrocarbon solvent and methanol, and dried at 60 to 150 ° C. In this way, the surface of the inorganic alignment film 16 may be subjected to silane coupling treatment.

  Next, with respect to the formation of the silicone polymer film 18, the TFT substrate 10 subjected to the silane coupling treatment is immersed in a mixed solution of 1,3,5,7-tetramethylcyclotetrasiloxane and hexane. Then, it wash | cleans in order of hexane and methanol, and it is made to dry at 60-150 degreeC. In this way, the silicone polymer film 18 may be formed on the surface of the inorganic alignment film 16.

  Next, for the trimethylsilylation treatment, the TFT substrate 10 on which the silicone polymer film 18 is formed is immersed in a mixed solution of trimethylmethoxysilane and a hydrocarbon solvent, and is heated and refluxed. Then, it wash | cleans in order of hexane and methanol, and it is made to dry at 60-150 degreeC. In this way, the surface of the silicone polymer film 18 may be subjected to trimethylsilylation treatment.

It is a top view which shows schematic structure of a liquid crystal device. It is a transmissive circuit diagram of a liquid crystal device. It is a top view which shows the structure of TFT. FIG. 4 is a cross-sectional view taken along line A-A ′ of the TFT shown in FIG. 3. It is sectional drawing which shows the manufacturing process of a liquid crystal device. It is a figure which shows schematic structure of an oblique vapor deposition apparatus. It is a top view which shows schematic structure of a projector.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... TFT substrate (substrate) 16, 22 ... Inorganic alignment film, 18 ... Silicone polymer film, 18a ... Fine hole, 60 ... Liquid crystal device

Claims (5)

A method of manufacturing a liquid crystal device in which a liquid crystal is sandwiched between a pair of substrates disposed opposite to each other,
An alignment film forming step of forming an inorganic alignment film on the liquid crystal side of each of the pair of substrates;
A silane coupling treatment step of treating the surface of the inorganic alignment film with a silane coupling agent;
A silicone polymer film forming step of forming a silicone polymer film on the surface of the inorganic alignment film subjected to silane coupling treatment;
A crosslinking reaction step of crosslinking the silicone polymer film;
A method for manufacturing a liquid crystal device, comprising:   2. The method for manufacturing a liquid crystal device according to claim 1, further comprising a trimethylsilylation treatment step of treating the surface of the inorganic alignment film and the surface of the silicone polymer film with a trimethylsilylating agent after the crosslinking reaction step. . In the silicone polymer film forming step, a material having two or more hydrosilyl groups is used for the silicone polymer film,
The method for manufacturing a liquid crystal device according to claim 1, wherein in the crosslinking reaction step, a crosslinking reaction is performed by steam treatment.   The method for manufacturing a liquid crystal device according to claim 1, wherein the silicone polymer film is formed by a CVD method. The method for manufacturing a liquid crystal device according to claim 1, wherein the inorganic alignment film is formed by oblique deposition.

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