JP2007134683A5 - - Google Patents
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- JP2007134683A5 JP2007134683A5 JP2006270463A JP2006270463A JP2007134683A5 JP 2007134683 A5 JP2007134683 A5 JP 2007134683A5 JP 2006270463 A JP2006270463 A JP 2006270463A JP 2006270463 A JP2006270463 A JP 2006270463A JP 2007134683 A5 JP2007134683 A5 JP 2007134683A5
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- region
- voltage
- semiconductor device
- supply circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 16
- 239000003990 capacitor Substances 0.000 claims 11
- 239000010408 film Substances 0.000 claims 9
- 239000010409 thin film Substances 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 5
- 239000011521 glass Substances 0.000 claims 1
- 229910052904 quartz Inorganic materials 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
Claims (12)
前記リーク素子を備え、無線信号より電源電圧を生成する電源回路と、を有し、
前記リーク素子は、規定電圧の範囲を超える電圧が前記電源回路内に生じたときの電気抵抗が、前記規定電圧の範囲内の電圧が前記電源回路内に生じたときの電気抵抗より低くなることで、前記電源電圧を前記規定電圧の範囲内に保持するよう機能することを特徴とする半導体装置。 A leak element;
With the leak element includes a power supply circuit that generates a power supply voltage from the radio signals, a,
The leakage element has an electric resistance when a voltage exceeding a specified voltage range is generated in the power supply circuit, and lower than an electric resistance when a voltage within the specified voltage range is generated in the power supply circuit. in a semiconductor device which is characterized in that functions to hold the power supply voltage within the specified voltage.
リーク素子と、
前記保持容量およびリーク素子を備え、無線信号より電源電圧を生成する電源回路と、を有し、
前記リーク素子は、規定電圧の範囲を超える電圧が前記電源回路内に生じたときの電気抵抗が、前記規定電圧の範囲内の電圧が前記電源回路内に生じたときの電気抵抗より低くなることで、前記保持容量に蓄積された電荷を電流として前記リーク素子に流し、前記電源電圧を前記規定電圧の範囲内に保持するよう機能することを特徴とする半導体装置。 Holding capacity,
A leak element;
A power supply circuit including the storage capacitor and the leak element, and generating a power supply voltage from a radio signal,
The leakage element has an electric resistance when a voltage exceeding a specified voltage range is generated in the power supply circuit, and lower than an electric resistance when a voltage within the specified voltage range is generated in the power supply circuit. in a semiconductor device which is characterized in that functions to hold the charge accumulated in the storage capacitor flows as current to the leakage device, the power supply voltage within the specified voltage.
ダイオードを有する整流部と、
保持容量およびリーク素子を有する保持容量部と、
前記アンテナ部、前記整流部および前記保持容量部を含み、無線信号より電源電圧を生成する電源回路と、を有し、
前記リーク素子は、規定電圧の範囲を超える電圧が前記電源回路内に生じたときの電気抵抗が、前記規定電圧の範囲内の電圧が前記電源回路内に生じたときの電気抵抗より低くなることで、前記保持容量に蓄積された電荷を電流として前記リーク素子に流し、前記電源電圧を前記規定電圧の範囲内に保持するよう機能することを特徴とする半導体装置。 An antenna and an antenna section having a resonant capacity;
A rectifier having a diode;
A storage capacitor unit having a storage capacitor and a leakage element;
A power supply circuit that includes the antenna unit, the rectification unit, and the storage capacitor unit and generates a power supply voltage from a radio signal;
The leakage element has an electric resistance when a voltage exceeding a specified voltage range is generated in the power supply circuit, and lower than an electric resistance when a voltage within the specified voltage range is generated in the power supply circuit. in a semiconductor device which is characterized in that functions to hold the charge accumulated in the storage capacitor flows as current to the leakage device, the power supply voltage within the specified voltage.
前記保持容量部の第１の出力端子と、前記保持容量部の第２の出力端子との電位差が前記電源電圧となることを特徴とする半導体装置。 A semiconductor device, wherein a potential difference between a first output terminal of the storage capacitor portion and a second output terminal of the storage capacitor portion is the power supply voltage.
前記整流部は、前記ダイオードを複数有することを特徴とする半導体装置。 In claim 3 or claim 4 ,
The rectifying section, and wherein a a plurality chromatic said diode.
前記電源回路は、絶縁表面を有する基板上に形成された半導体薄膜を有する薄膜トランジスタを用いて構成されていることを特徴とする半導体装置。 In any one of Claims 1 to 5 ,
The power supply circuit includes a thin film transistor having a semiconductor thin film formed over a substrate having an insulating surface.
前記絶縁表面を有する基板は、ガラス基板、石英基板、プラスチック基板、のいずれかであることを特徴とする半導体装置。 In claim 5,
It said substrate having an insulating surface, the semiconductor device according to claim glass substrate, a quartz substrate, the plastic substrate, is either.
前記リーク素子は、Ｎ型ＭＯＳトランジスタまたはＰ型ＭＯＳトランジスタであることを特徴とする半導体装置。 In any one of Claims 1 thru | or 7,
The semiconductor device according to claim 1, wherein the leak element is an N-type MOS transistor or a P-type MOS transistor.
前記リーク素子は、Ｎ型メモリトランジスタまたはＰ型メモリトランジスタであることを特徴とする半導体装置。 In any one of Claims 1 thru | or 7,
The semiconductor device, wherein the leak element is an N-type memory transistor or a P-type memory transistor.
前記リーク素子は、半導体薄膜と、ゲート絶縁膜と、ゲート電極を積層することで形成されるＭＩＳ容量を有し、
前記ゲート絶縁膜は、第１の領域と当該第１の領域より当該ゲート絶縁膜の膜厚が薄い第２の領域を有することを特徴とする半導体装置。 In any one of Claims 1 thru | or 7,
The leak element has a MIS capacitor formed by stacking a semiconductor thin film, a gate insulating film, and a gate electrode,
The semiconductor device, wherein the gate insulating film includes a first region and a second region where the thickness of the gate insulating film is smaller than that of the first region.
前記リーク素子は、半導体薄膜と、ゲート絶縁膜と、ゲート電極を積層することで形成されるＭＩＳ容量を有し、
前記ゲート絶縁膜は、第１の領域と当該第１の領域より当該ゲート絶縁膜の膜厚が薄い第２の領域を有し、
前記第２の領域は、前記ゲート電極の端部と重なっていることを特徴とする半導体装置。 In any one of Claims 1 thru | or 7,
The leak element has a MIS capacitor formed by stacking a semiconductor thin film, a gate insulating film, and a gate electrode,
The gate insulating film includes a first region and a second region in which the gate insulating film is thinner than the first region,
The semiconductor device, wherein the second region overlaps with an end portion of the gate electrode.
前記リーク素子は、半導体薄膜と、ゲート絶縁膜と、ゲート電極を積層することで形成されるＭＩＳ容量を有し、
前記ゲート絶縁膜は、第１の領域と当該第１の領域より当該ゲート絶縁膜の膜厚が薄い第２の領域を有し、
前記第１の領域は、前記半導体薄膜と重なっており、
前記第２の領域は、前記半導体薄膜の端部と重なっていることを特徴とする半導体装置。 In any one of Claims 1 thru | or 7,
The leak element has a MIS capacitor formed by stacking a semiconductor thin film, a gate insulating film, and a gate electrode,
The gate insulating film includes a first region and a second region in which the gate insulating film is thinner than the first region,
The first region overlaps the semiconductor thin film,
The semiconductor device according to claim 1, wherein the second region overlaps an end portion of the semiconductor thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006270463A JP5105817B2 (en) | 2005-10-12 | 2006-10-02 | Semiconductor device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005298244 | 2005-10-12 | ||
| JP2005298244 | 2005-10-12 | ||
| JP2006270463A JP5105817B2 (en) | 2005-10-12 | 2006-10-02 | Semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007134683A JP2007134683A (en) | 2007-05-31 |
| JP2007134683A5 true JP2007134683A5 (en) | 2009-11-12 |
| JP5105817B2 JP5105817B2 (en) | 2012-12-26 |
Family
ID=38156046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006270463A Expired - Fee Related JP5105817B2 (en) | 2005-10-12 | 2006-10-02 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5105817B2 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53126567U (en) * | 1977-03-15 | 1978-10-07 | ||
| JP2000348152A (en) * | 1999-06-09 | 2000-12-15 | Hitachi Ltd | Noncontact ic card |
| JP3784271B2 (en) * | 2001-04-19 | 2006-06-07 | 松下電器産業株式会社 | Semiconductor integrated circuit and non-contact type information medium equipped with the same |
| JP2004273538A (en) * | 2003-03-05 | 2004-09-30 | Seiko Epson Corp | Semiconductor device and its manufacturing method |
| JP4536496B2 (en) * | 2003-12-19 | 2010-09-01 | 株式会社半導体エネルギー研究所 | Semiconductor device and driving method of semiconductor device |
-
2006
- 2006-10-02 JP JP2006270463A patent/JP5105817B2/en not_active Expired - Fee Related
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