JP2007141998A - Apparatus and method of manufacturing semiconductor chip - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To realize an apparatus and a method of manufacturing semiconductor chips which can improve the yield of the semiconductor chips to be acquired by separating a semiconductor substrate. <P>SOLUTION: The semiconductor chip manufacturing apparatus 1 includes an adsorbing member 43 for adsorbing and holding a semiconductor chip 22c, and a transfer mechanism 44 for transferring the adsorbing member 43. When the semiconductor chip 22c is adsorbed by the adsorbing member 43 and ascended by the transferring mechanism 44, a shearing stress is generated intensively on a modifying region introduced by irradiation of a laser beam in response to a separation schedule line DL of the semiconductor chip 22c. In this way, the semiconductor substrate 21 is separated in a thickness direction along the separation schedule line DL, and the semiconductor chip 22c can be acquired. The semiconductor chip 22c is transferred by the transfer mechanism 44 in a state where it is adsorbed by the adsorbing member 43 to a mounting process for mounting it on a package. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a manufacturing apparatus for obtaining a semiconductor chip by dividing a semiconductor substrate in the thickness direction and a method for manufacturing the semiconductor chip.

Conventionally, in the production of semiconductor chips, a semiconductor substrate in a state where dicing is applied to a line to be divided and attached to a sheet is expanded by extending the sheet, and stress is applied in the surface direction of the semiconductor substrate. Thus, a semiconductor chip manufacturing apparatus that divides into semiconductor chips is used. FIG. 7 shows an example of a conventional semiconductor chip manufacturing apparatus. FIG. 7A is an explanatory diagram showing a state in which the semiconductor substrate is bonded to the sheet and the outer peripheral portion of the sheet is held by the frame. FIG. 7B is a diagram illustrating the semiconductor substrate divided into semiconductor chips by the pressing device. It is explanatory drawing of the process to do.
As shown in FIG. 7A, the back substrate surface of the semiconductor substrate W made of a semiconductor such as silicon is bonded to a stretchable resin sheet S in a state where laser dicing or the like is applied. The outer periphery of the sheet S is held by an annular frame F.
Then, as shown in FIG. 7B, the semiconductor substrate W is pushed up from the back side of the sheet S by using a pressing device M that is arranged below the semiconductor substrate W and moves up and down by a moving means (not shown). By pressing, the sheet S is stretched in the surface direction (the directions of arrows F1 and F2 in the figure). As a result, the semiconductor substrate W bonded to the sheet S is stressed in the surface direction, so that the semiconductor substrate W is divided into a plurality of semiconductor chips C (Patent Document 1).
JP 2003-334675 A

  However, in the conventional semiconductor chip manufacturing apparatus, since the sheet S is stretched in a state where the outer periphery of the sheet S is held, the sheet S tends to increase in the outer peripheral portion and decrease in the central portion. That is, the semiconductor substrate W is appropriately divided in the vicinity of the outer periphery, but is difficult to be divided in the vicinity of the center, and there is a problem that the yield of the semiconductor chip C is lowered.

  Accordingly, an object of the present invention is to realize a semiconductor chip manufacturing apparatus and a semiconductor chip manufacturing method capable of improving the yield of semiconductor chips obtained by dividing a semiconductor substrate.

  In order to achieve the above object, according to the first aspect of the present invention, the semiconductor device includes the semiconductor element by dividing a semiconductor substrate having a plurality of semiconductor elements formed on one substrate surface in the thickness direction. In a semiconductor chip manufacturing apparatus for obtaining a semiconductor chip, a line to be divided is set on the substrate surface between each semiconductor element, and a thickness direction corresponding to the line is set in a thickness direction. A region for reducing the stress required for dividing is formed, and a predetermined member is attached to a portion of the substrate surface surrounded by the periphery of the semiconductor element and the line, and the predetermined member By applying a force acting in a direction away from the substrate surface to generate shear stress in the region, the semiconductor substrate is divided in the thickness direction of the line, and the predetermined member Obtain a semiconductor chip that corresponds to the attached portion, using a technical means of.

  In the invention according to claim 2, in the semiconductor chip manufacturing apparatus for obtaining a semiconductor chip having the semiconductor element by dividing the semiconductor substrate having a plurality of semiconductor elements formed on one substrate surface in the thickness direction. Lines to be divided are set on the substrate surface between the semiconductor elements, and in the thickness direction corresponding to the lines, the stress necessary for dividing in the thickness direction is reduced. A predetermined member is attached to a portion of the substrate surface surrounded by the periphery of the semiconductor element and the line, and the substrate surface is pressed against the predetermined member. A semiconductor corresponding to a portion to which the predetermined member is attached by dividing the semiconductor substrate in the thickness direction of the line by applying an acting force to generate a shear stress in the region. Tsu get up, using the technical means of.

  According to a third aspect of the present invention, in a semiconductor chip manufacturing apparatus for obtaining a semiconductor chip having the semiconductor element by dividing a semiconductor substrate in which a plurality of semiconductor elements are formed on one substrate surface in a thickness direction. Lines to be divided are set on the substrate surface between the semiconductor elements, and in the thickness direction corresponding to the lines, the stress necessary for dividing in the thickness direction is reduced. A predetermined member is attached to a portion of the substrate surface surrounded by the periphery of the semiconductor element at the end of the semiconductor substrate and the line, and the predetermined member is Applying a force acting in a plane direction of the semiconductor substrate and away from the semiconductor substrate to generate stress in the region, thereby causing the semiconductor substrate to move in the thickness direction of the line. And split to obtain a semiconductor chip that corresponds to the portion where the predetermined member is attached, using the technical means of.

  According to a fourth aspect of the present invention, in a semiconductor chip manufacturing apparatus for obtaining a semiconductor chip having the semiconductor element by dividing a semiconductor substrate having a plurality of semiconductor elements formed on one substrate surface in the thickness direction. Lines to be divided are set on the substrate surface between the semiconductor elements, and in the thickness direction corresponding to the lines, the stress necessary for dividing in the thickness direction is reduced. A predetermined member is attached to a position corresponding to a portion surrounded by the line on the other substrate surface of the semiconductor substrate, and the predetermined member is separated from the other substrate surface. By applying a force acting in the direction to generate a shear stress in the region, the semiconductor substrate is divided in the thickness direction of the line, and a portion to which the predetermined member is attached is applied. Obtaining a semiconductor chip, using the technical means of.

  According to a fifth aspect of the present invention, in the semiconductor chip manufacturing apparatus according to any one of the first to fourth aspects, at least one adjacent to a semiconductor element corresponding to a portion to which the predetermined member is attached. The direction of the force acting by the predetermined member on the portion surrounded by the periphery of one semiconductor element and the line, or on the other substrate surface side of the semiconductor substrate corresponding to the portion surrounded by the line The technical means of having an urging means for urging in the direction is used.

  According to a sixth aspect of the present invention, in the semiconductor chip manufacturing apparatus according to any one of the first to fifth aspects, a sheet for bonding the other substrate surface of the semiconductor substrate, and an outer periphery of the sheet A technical means is used that includes holding means for holding and expansion means for expanding the sheet held by the holding means.

  According to a seventh aspect of the present invention, in the semiconductor chip manufacturing apparatus according to the sixth aspect of the present invention, the semiconductor chip manufacturing apparatus further includes a pressing unit that presses the sheet held by the holding unit from the back surface, and the back surface of the sheet is pressed The technical means of expanding by pressing the means is used.

  According to an eighth aspect of the present invention, in the semiconductor chip manufacturing apparatus according to any one of the first to seventh aspects, a laser head that irradiates a laser beam is applied to the semiconductor substrate along the line. There is provided a modified region forming means for irradiating a laser beam with a focusing point inside the semiconductor substrate while moving relative to the semiconductor substrate, and forming a modified region by multiphoton absorption as the region at the focusing point. Therefore, a technical means is used in which the semiconductor substrate that has undergone the modified region forming step is divided starting from the modified region.

  According to a ninth aspect of the present invention, in the semiconductor chip manufacturing apparatus according to any one of the first to eighth aspects, the predetermined member is attached in a state in which the divided semiconductor chip is attached. A technical means is used in which the semiconductor chip is transferred to the mounting process of the semiconductor chip by a moving mechanism that moves the member.

  According to a tenth aspect of the present invention, a semiconductor substrate having a plurality of semiconductor elements formed on one substrate surface is prepared, and the semiconductor substrate is divided in the thickness direction to obtain a semiconductor chip having the semiconductor elements. In the method for manufacturing a semiconductor chip including a dividing step, the semiconductor substrate has a line to be divided set on the substrate surface between the semiconductor elements, and in a thickness direction corresponding to the line, A region for reducing stress required for dividing in the thickness direction is formed, and the dividing step is performed in a predetermined part of the substrate surface surrounded by the periphery of the semiconductor element and the line. By attaching a member and applying a force acting in a direction away from the substrate surface to the predetermined member to generate a shear stress in the region, the semiconductor substrate is formed in the line. Divided in the thickness direction is a step of obtaining a semiconductor chip that corresponds to the portion where the predetermined member is attached, using the technical means of.

  In the invention described in claim 11, a semiconductor substrate having a plurality of semiconductor elements formed on one substrate surface is prepared, and the semiconductor substrate is divided in the thickness direction to obtain a semiconductor chip having the semiconductor elements. In the method for manufacturing a semiconductor chip including a dividing step, the semiconductor substrate has a line to be divided set on the substrate surface between the semiconductor elements, and in a thickness direction corresponding to the line, A region for reducing stress required for dividing in the thickness direction is formed, and the dividing step is performed in a predetermined part of the substrate surface surrounded by the periphery of the semiconductor element and the line. The semiconductor substrate is attached to the line by attaching a member and applying a force acting in the direction of pressing the substrate surface against the predetermined member to generate a shear stress in the region. Divided in the thickness direction is a step of obtaining a semiconductor chip that corresponds to the portion where the predetermined member is attached, using the technical means of.

  In a twelfth aspect of the invention, a semiconductor substrate having a plurality of semiconductor elements formed on one substrate surface is prepared, and the semiconductor substrate is divided in the thickness direction, thereby obtaining a semiconductor chip having the semiconductor elements. In the method for manufacturing a semiconductor chip including a dividing step, the semiconductor substrate has a line to be divided set on the substrate surface between the semiconductor elements, and in a thickness direction corresponding to the line, A region for reducing a stress necessary for dividing in the thickness direction is formed, and the dividing step includes the periphery of the semiconductor element at the end of the semiconductor substrate and the line on the substrate surface. A predetermined member is attached to a portion surrounded by the surface, and a force acting on the predetermined member in the direction of the surface of the semiconductor substrate and away from the semiconductor substrate is applied, A technical means is used in which the semiconductor substrate is divided in the thickness direction of the line by generating stress in a region to obtain a semiconductor chip corresponding to a portion to which the predetermined member is attached. .

  In a thirteenth aspect of the present invention, a semiconductor substrate having a plurality of semiconductor elements formed on one substrate surface is prepared, and the semiconductor substrate is divided in the thickness direction to obtain a semiconductor chip having the semiconductor elements. In the method for manufacturing a semiconductor chip including a dividing step, the semiconductor substrate has a line to be divided set on the substrate surface between the semiconductor elements, and in a thickness direction corresponding to the line, A region for lowering the stress necessary for dividing in the thickness direction is formed, and the dividing step is performed at a position corresponding to a portion surrounded by the line on the other substrate surface of the semiconductor substrate. The semiconductor substrate is attached by applying a force acting in a direction away from the other substrate surface to the predetermined member to generate a shear stress in the region. Divided in the thickness direction of the line, a process to obtain a semiconductor chip that corresponds to the portion where the predetermined member is attached, using the technical means of.

  According to the first aspect of the present invention, a predetermined member is attached to a portion of the substrate surface surrounded by the periphery of the semiconductor chip and a line to be divided, and the predetermined surface is separated from the substrate surface. In order to reduce the stress required for dividing in the thickness direction corresponding to the line to be divided set on the substrate surface between each semiconductor element by applying a force acting in the direction away from each other, the thickness direction It is possible to reliably apply stress to the region formed in the above. Therefore, for each semiconductor element to which a predetermined member is attached, the semiconductor substrate can be surely divided in the thickness direction of the line, and there is no residue left in the semiconductor chip near the center of the semiconductor substrate. Thus, it is possible to realize a semiconductor chip manufacturing apparatus capable of improving the yield of the semiconductor chips obtained.

According to the second aspect of the present invention, a predetermined member is attached to a portion of the substrate surface surrounded by the periphery of the semiconductor chip and a line to be divided, and the substrate surface is attached to the predetermined member. In order to reduce the stress required for the division in the thickness direction corresponding to the line to be divided set on the substrate surface between the semiconductor elements by applying a force acting in the direction of pressing Stress can be reliably applied to the region formed in the vertical direction. Therefore, for each semiconductor element to which a predetermined member is attached, the semiconductor substrate can be surely divided in the thickness direction of the line, and there is no residue left in the semiconductor chip near the center of the semiconductor substrate. Thus, it is possible to realize a semiconductor chip manufacturing apparatus capable of improving the yield of the semiconductor chips obtained.
Moreover, since the force for attaching the predetermined member may be a force that does not deviate from the direction in which stress is applied when pressing, the force required for attachment can be reduced.

According to the third aspect of the present invention, the predetermined member is attached to a portion of the substrate surface surrounded by the periphery of the semiconductor element at the end of the semiconductor substrate and the line to be divided. By applying a force acting on the member in the direction of the surface of the semiconductor substrate and away from the semiconductor substrate, the thickness corresponding to the line scheduled to be divided set on the substrate surface between the semiconductor elements is increased. In order to reduce the stress necessary for the division in the vertical direction, the stress can be reliably applied to the region formed in the thickness direction. Therefore, for each semiconductor element to which a predetermined member is attached, the semiconductor substrate can be surely divided in the thickness direction of the line, and there is no residue left in the semiconductor chip near the center of the semiconductor substrate. Thus, it is possible to realize a semiconductor chip manufacturing apparatus capable of improving the yield of the semiconductor chips obtained.
Also, when the semiconductor chip is divided, the semiconductor chip moves relative to the surface direction of the semiconductor substrate and away from the semiconductor substrate, so that the divided surfaces do not rub against each other, so chipping occurs in the semiconductor chip. There is no fear.

According to the fourth aspect of the present invention, a predetermined member is attached to a position corresponding to a portion surrounded by a line to be divided on the other substrate surface of the semiconductor substrate, and the other member is attached to the predetermined member. By applying a force acting in the direction away from the substrate surface, the stress required for dividing in the thickness direction is reduced corresponding to the line to be divided set on the substrate surface between the semiconductor elements. In addition, it is possible to reliably apply stress to the region formed in the thickness direction. Therefore, for each semiconductor element to which a predetermined member is attached, the semiconductor substrate can be reliably divided in the thickness direction of the line, and there is no residual crack, so the yield of semiconductor chips obtained by dividing the semiconductor substrate It is possible to realize a semiconductor chip manufacturing apparatus capable of improving the above.
Further, since the predetermined member is attached to the surface where the semiconductor element is not formed, there is no possibility of damaging the semiconductor element.

  According to the fifth aspect of the present invention, the portion surrounded by the line and the periphery of at least one semiconductor element adjacent to the semiconductor element corresponding to the portion to which the predetermined member is attached, or surrounded by the line Since the biasing means for biasing in the direction opposite to the direction in which the force acting on the predetermined member acts is provided on the other substrate surface side of the semiconductor substrate corresponding to the bent portion, stress is applied by the predetermined member. In this case, it is possible to suppress the deformation of the semiconductor substrate other than the portion where the predetermined member is attached, and to concentrate the stress on the region, so that only the semiconductor chip to be divided can be surely divided. Can do.

  According to the invention described in claim 6, since the semiconductor substrate is subjected to a tensile stress in the surface direction by expanding the sheet when stress is applied to the semiconductor substrate, the stress acting on the region increases. As a result, the semiconductor substrate can be more easily divided.

  In particular, according to the invention described in claim 7, since the sheet is expanded by a simple operation of pressing the back surface of the sheet with the pressing means, the semiconductor substrate is more efficiently loaded with stress. Can be divided.

In particular, in the invention according to any one of claims 1 to 7, as in the invention according to claim 8, a laser head for irradiating a laser beam is arranged along the planned dividing line with the semiconductor substrate. Is provided with a modified region forming means for irradiating a laser beam with a converging point inside the semiconductor substrate while moving relative to the semiconductor substrate, and forming a modified region by multiphoton absorption at the condensing point, The semiconductor substrate that has undergone the modified region forming step is suitably used for a substrate that has a configuration in which the modified substrate is divided starting from the modified region.
That is, since the modified region is formed inside the semiconductor substrate by laser light irradiation, no dust is generated unlike the case of dicing with a diamond blade or the like, and there is no possibility that the dust adheres to the substrate surface of the semiconductor substrate.

  According to the ninth aspect of the present invention, the predetermined member is transferred to the mounting process of the semiconductor chip with the divided semiconductor chip attached, so that the pickup is picked up and transferred to the mounting process after dividing the semiconductor chip. Compared with the method, the time can be shortened, and the pickup of the semiconductor chip can be reliably transferred to the mounting process without failure.

  According to the invention described in claim 10, a predetermined member is attached to a portion of the substrate surface surrounded by the periphery of the semiconductor chip and a line to be divided, and the predetermined member is separated from the substrate surface. In order to reduce the stress required for dividing in the thickness direction corresponding to the line to be divided set on the substrate surface between each semiconductor element by applying a force acting in the direction away from each other, the thickness direction It is possible to reliably apply stress to the region formed in the above. Therefore, for each semiconductor element to which a predetermined member is attached, the semiconductor substrate can be surely divided in the thickness direction of the line, and there is no residue left in the semiconductor chip near the center of the semiconductor substrate. Thus, it is possible to realize a method of manufacturing a semiconductor chip that can improve the yield of the semiconductor chip obtained.

According to the invention described in claim 11, a predetermined member is attached to a portion of the substrate surface surrounded by the periphery of the semiconductor chip and a line to be divided, and the substrate surface with respect to the predetermined member In order to reduce the stress required for the division in the thickness direction corresponding to the line to be divided set on the substrate surface between the semiconductor elements by applying a force acting in the direction of pressing Stress can be reliably applied to the region formed in the vertical direction. Therefore, for each semiconductor element to which a predetermined member is attached, the semiconductor substrate can be surely divided in the thickness direction of the line, and there is no residue left in the semiconductor chip near the center of the semiconductor substrate. Thus, it is possible to realize a method of manufacturing a semiconductor chip that can improve the yield of the semiconductor chip obtained.
Moreover, since the force for attaching the predetermined member may be a force that does not deviate from the direction in which stress is applied when pressing, the force required for attachment can be reduced.

According to the twelfth aspect, the predetermined member is attached to a portion of the substrate surface surrounded by the periphery of the semiconductor element at the end of the semiconductor substrate and the line to be divided, and the predetermined member is attached to the predetermined member. On the other hand, by applying a force acting in the surface direction of the semiconductor substrate and away from the semiconductor substrate, the thickness direction corresponds to the line to be divided set on the substrate surface between the semiconductor elements. In order to reduce the stress required for dividing into two, the stress can be reliably applied to the region formed in the thickness direction. Therefore, for each semiconductor element to which a predetermined member is attached, the semiconductor substrate can be surely divided in the thickness direction of the line, and there is no residue left in the semiconductor chip near the center of the semiconductor substrate. Thus, it is possible to realize a method of manufacturing a semiconductor chip that can improve the yield of the semiconductor chip obtained.
Also, when the semiconductor chip is divided, the semiconductor chip moves relative to the surface direction of the semiconductor substrate and away from the semiconductor substrate, so that the divided surfaces do not rub against each other, so chipping occurs in the semiconductor chip. There is no fear.

According to the thirteenth aspect of the present invention, a predetermined member is attached to a position corresponding to a portion surrounded by a line to be divided on the other substrate surface of the semiconductor substrate, and the other member is attached to the predetermined member. By applying a force acting in the direction away from the substrate surface, the stress required for dividing in the thickness direction is reduced corresponding to the line to be divided set on the substrate surface between the semiconductor elements. In addition, it is possible to reliably apply stress to the region formed in the thickness direction. Therefore, for each semiconductor element to which a predetermined member is attached, the semiconductor substrate can be reliably divided in the thickness direction of the line, and there is no residual crack, so the yield of semiconductor chips obtained by dividing the semiconductor substrate It is possible to realize a semiconductor chip manufacturing method capable of improving the above.
Further, since the predetermined member is attached to the surface where the semiconductor element is not formed, there is no possibility of damaging the semiconductor element.

[First Embodiment]
A semiconductor chip manufacturing apparatus and manufacturing method according to a first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a schematic diagram showing a configuration example of a semiconductor substrate divided by the semiconductor chip manufacturing apparatus of the present invention. FIG. 1A is an explanatory plan view of a semiconductor substrate bonded to a sheet held by a frame, and FIG. 1B is a cross-sectional view taken along the line 1B-1B in FIG. FIG. 2 is an explanatory view of a semiconductor chip manufacturing apparatus for irradiating a semiconductor substrate with laser light. FIG. 3 is an explanatory diagram of a semiconductor chip manufacturing method using the manufacturing apparatus according to the first embodiment, and FIG. 3 (A) is an explanatory diagram of a state before the semiconductor substrate is divided, and FIG. ) Is an explanatory diagram of a state after the division of the semiconductor substrate.
In each figure, a part is enlarged and exaggerated for explanation.

First, as shown in FIG. 1A, a wafer 20 is prepared. The wafer 20 is provided with a thin disk-shaped semiconductor substrate 21 made of silicon, and an orientation flat OF showing a crystal orientation is formed on a part of the outer periphery thereof. On the substrate surface 21a of the semiconductor substrate 21, a plurality of semiconductor chips 22 having semiconductor elements 24 formed through a diffusion process or the like are arranged in an array like a grid. In the following description, a portion that is not divided from the semiconductor substrate 21 and that originally becomes a semiconductor chip after being divided is also referred to as a semiconductor chip. These semiconductor chips 22 are divided into a thickness direction along the division line DL by a dicing process, and then packaged by performing various processes such as a mounting process, a bonding process, and an encapsulating process. Complete.
In the semiconductor substrate 21, the back surface 21b of the substrate surface 21a is bonded to a stretchable resin sheet 41, and the outer periphery of the sheet 41 is held by an annular frame 42 in a state where the sheet 41 is stretched. .

On the substrate surface 21 a between the semiconductor elements 24, scheduled division lines DL <b> 1 to DL <b> 14 are set, which are lines scheduled to divide the semiconductor substrate 21 in the thickness direction. The scheduled division lines DL1 to DL7 are set in parallel to the orientation flat OF in a substantially vertical direction, respectively, and the planned division lines DL8 to DL14 are set in parallel to the orientation flat OF in a substantially parallel direction. That is, each of the semiconductor elements 24 is surrounded by the planned dividing lines DL on its four sides.
As shown in FIG. 1B, six semiconductor chips 22a to 22f are formed on the 1B-1B line. On the substrate surface of the semiconductor substrate 21, seven division lines DL1 to DL7 and division lines DL11 and DL12 (FIG. 1A) are set. In the thickness direction corresponding to the division lines DL1 to DL7, modified regions K1 to K7 that are the starting points of the division are formed by a method described later. Similarly, a modified region (not shown) is formed in the thickness direction corresponding to the planned division lines DL11 and DL12 (FIG. 1A).

  As shown in FIG. 2, the semiconductor chip manufacturing apparatus 1 is provided with a laser head 31 that irradiates a laser beam L. The laser head 31 includes a condensing lens 32 that condenses the laser light L, and can condense the laser light L at a predetermined focal length. Here, the condensing point P of the laser beam L is set so as to be formed at a depth d from the substrate surface 21 a of the semiconductor substrate 21.

In order to form the modified region K in the semiconductor substrate 21, first, one of the division lines DL shown in FIG. 1A is scanned with the laser beam for detecting the semiconductor substrate, and the irradiation with the laser beam L is performed. Set the range.
Subsequently, as shown in FIG. 2, the laser head 31 is scanned along the planned division line DL (in the direction of arrow F4 in the figure), and the laser light L is irradiated from the substrate surface 21a, thereby condensing the laser light L. The modified region K by multiphoton absorption is appropriately formed in the path of depth d scanned by the point P. By adjusting the depth d of the condensing point P of the laser beam L, the modified region K having an arbitrary number of layers can be formed at an arbitrary depth within the thickness range of the semiconductor substrate 21. For example, when the thickness is relatively thick, the condensing point P is moved in the thickness direction to form the modified region K continuously in the thickness direction or at a plurality of locations, thereby dividing the semiconductor substrate 21. Can be made easier.
Here, multiphoton absorption means that a substance absorbs a plurality of the same or different photons. Due to the multiphoton absorption, a phenomenon called optical damage occurs at the condensing point P of the semiconductor substrate W and in the vicinity thereof, thereby inducing thermal strain, generating cracks in the portion, and a layer in which the cracks are gathered. That is, the modified region K is formed.

  Subsequently, by applying a stress to the semiconductor substrate 21, cracks are developed in the substrate thickness direction starting from the modified region K, and the semiconductor substrate 21 is divided in the thickness direction along the division line DL. To do. Here, as shown in FIG. 1B, a dividing process of dividing the semiconductor chip 22c among the six semiconductor chips 22a to 22f arranged on the 1B-1B line will be described.

As shown in FIG. 3 (A), the semiconductor substrate 21 is modified (not shown) corresponding to the modified regions K1 to K7 corresponding to the planned division lines DL1 to DL7 and the planned division lines DL11 and DL12 (FIG. 1 (A)). A quality region is introduced and adhered to the sheet 41. Here, the frame 42 holding the sheet 41 is fixed so as not to move by a fixing means (not shown).
The semiconductor chip manufacturing apparatus 1 includes an adsorption member 43 (for example, a die pickup) that adsorbs and holds the semiconductor chip 22c, an adsorption device (not shown) for adsorbing the adsorption member 43 to the semiconductor chip 22c, and an adsorption member 43. And a moving mechanism 44 for moving the.
The tip of the suction member 43 abuts a portion of the substrate surface 21a surrounded by the periphery of the semiconductor element 24c and the planned dividing lines DL3 and DL4 and the planned dividing lines DL11 and DL12 (FIG. 1A). A contact portion 43a is formed. The adsorbing member 43 adsorbs the substrate surface 21a by depressurizing the inside of the space 43b between the adsorbing member 43 and the substrate surface 21a by a suction device (not shown) while the adsorbing member 43 and the substrate surface 21a are in contact with each other. To do. Here, when the contact portion 43a is formed of an elastic body such as rubber, the adhesion to the substrate surface 21a is improved, and the suction force is increased.

  An urging member 45 is disposed in contact with the substrate surface 21a of the semiconductor chip adjacent to the semiconductor chip 22c including the semiconductor chips 22b and 22d. The urging member 45 is a plate-like member having an abutting portion that abuts against the substrate surface 21a, and urges the semiconductor chips 22b and 22d downward by pressing the substrate surface 21a by the abutting portion. Here, the urging member 45 may be provided with a linear motion mechanism such as a motor and can be moved up and down.

Next, as shown in FIG. 3B, the adsorption member 43 is raised by the moving mechanism 44. The semiconductor chips 22b and 22d adjacent to the semiconductor chip 22c are urged from the direction opposite to the moving direction of the semiconductor chip 22c by the urging member 45, and deformation of portions other than the semiconductor chip 22c of the semiconductor substrate 21 is suppressed. Shear stress is intensively generated in the modified regions corresponding to the modified regions K3 and K4 and the planned division lines DL11 and DL12 (FIG. 1A). As a result, the semiconductor substrate 21 is divided in the thickness direction along the scheduled division lines DL3 and DL4 and the planned division lines DL11 and DL12 set around the semiconductor element 24c, and the semiconductor chip 22c is obtained. By further raising the suction member 43, the semiconductor chip 22c is removed from the sheet 41 and pulled upward.
The pulled-up semiconductor chip 22c is adsorbed by the adsorbing member 43, and air is blown onto the semiconductor chip 22c using an air cleaning device (not shown) to remove dust generated during the division. Subsequently, with the semiconductor chip 22c adsorbed, the adsorbing member 43 is transferred to a mounting process for mounting on the package by the moving mechanism 44.
Other semiconductor chips 22a, 22b, and 22d to 22f can be divided individually by performing the same operation.

[Effect of the first embodiment]
(1) By adsorbing the adsorbing member 43 to a portion surrounded by the periphery of the semiconductor element 24c on the substrate surface 21a and the division lines DL3 and DL4 and the division lines DL11 and DL12, and applying a force acting upward. In addition, it is possible to reliably apply stress to the modified regions K3 and K4 formed corresponding to the scheduled division lines DL3 and DL4 and the modified regions formed corresponding to the planned divided lines DL11 and DL12. Therefore, the semiconductor chip 22a to which the adsorbing member 43 is attached can be reliably divided in the thickness direction along the division lines DL3, DL4, DL11, DL12, and there is no remaining crack, so the semiconductor substrate 21 is divided. Thus, the semiconductor chip manufacturing apparatus 1 and the manufacturing method capable of improving the yield of the semiconductor chip 22 obtained in this way can be realized.

(2) Since the semiconductor chip 22b, 22d adjacent to the semiconductor chip 22c to which the suction member 43 is attached is provided with a biasing member 45 that biases the semiconductor chip 22b, 22d in the direction opposite to the direction of the force acting by the suction member 43, the suction is performed. When stress is applied by the member 43, the deformation of the semiconductor substrate 21 other than the portion to which the adsorption member 43 is attached is suppressed, and the modification formed corresponding to the modified regions K3 and K4 and the scheduled division lines DL11 and DL12. Since stress can be applied in a concentrated manner in the quality region, only the semiconductor chip 22c can be reliably divided.

(3) Since the adsorbing member 43 is transferred to the mounting process of the semiconductor chip 22c while adsorbing the divided semiconductor chip 22c, it is compared with a method of picking up the semiconductor chip 22c and then transferring it to the mounting process. In addition, the time can be shortened and the pickup of the semiconductor chip 22c can be reliably transferred to the mounting process without failure.

(4) By applying the laser dicing method, since the semiconductor substrate 21 can be diced after being bonded to the sheet 41, the dicing process can be shortened, and dust is not generated during dicing. There is no risk of dust adhering to the surface 21a.

[Modification of First Embodiment]
(1) When stress is applied to the semiconductor substrate 21, if the sheet 41 is expanded in the surface direction (the directions of arrows F5 and F6 in the drawing), the semiconductor substrate 21 is subjected to tensile stress in the surface direction. Since the stress acting on the modified regions formed corresponding to the quality regions K3 and K4 and the scheduled division lines DL11 and DL12 increases, the material can be more easily divided. As a method for expanding the sheet 41, for example, a method using a pressing device M as shown in FIG. 7 can be employed.

(2) In the present embodiment, as a dicing method for the semiconductor substrate 21, the laser dicing method in which the laser beam L is irradiated from the substrate surface 21a and the modified region K is formed in the semiconductor substrate 21 is exemplified. It is not limited. For example, a dicing method of forming a notch in the semiconductor substrate 21 with a diamond blade can be applied to the semiconductor chip manufacturing apparatus 1 of this embodiment. A dicing method in which laser dicing is performed after a notch is formed in the semiconductor substrate 21 with a diamond blade can be applied.
The semiconductor substrate 21 is bonded and held by the sheet 41, but may be held by other methods. For example, the outer peripheral portion of the semiconductor substrate 21 may be sandwiched and held by a fixing jig provided on the pedestal.

(3) In the present embodiment, the configuration in which only the semiconductor chip 22c is divided is illustrated, but the present invention is not limited to this. For example, the suction member 43 may be further disposed on the semiconductor chip 22e, and the biasing member 45 may be further disposed on the semiconductor chip 22f, and the semiconductor chips 22c, 22d, and 22e may be divided by a single operation.
That is, it is possible to obtain a plurality of semiconductor chips in one operation by alternately placing the adsorbing members and the fixing members on the adjacent semiconductor chips 22 and applying stress.

[Second Embodiment]
A semiconductor chip manufacturing apparatus and method according to a second embodiment of the present invention will be described with reference to the drawings. FIG. 4 is an explanatory view of a semiconductor chip manufacturing method using the manufacturing apparatus according to the second embodiment, and FIG. 4 (A) is an explanatory view of a state before the semiconductor substrate is divided, and FIG. ) Is an explanatory diagram of a state after the division of the semiconductor substrate.
In addition, about the structure similar to 1st Embodiment, while using the same code | symbol, description is abbreviate | omitted.

As shown in FIG. 4 (A), the semiconductor substrate 21 is modified (not shown) corresponding to the modified regions K1 to K7 corresponding to the planned division lines DL1 to DL7 and the planned division lines DL11 and DL12 (FIG. 1 (A)). A quality region is introduced and adhered to the sheet 41. Here, the frame 42 holding the sheet 41 is fixed so as not to move by a fixing means (not shown).
Next, a biasing member 46 that biases the semiconductor chips 22b and 22d upward from the back surface 21b of the semiconductor substrate 21 on which the semiconductor chips 22b and 22d adjacent to the semiconductor chip 22c are formed is pressed through the sheet 41. Make contact.

As shown in FIG. 4B, when the suction member 43 is lowered by the moving mechanism 44, the semiconductor chip 22c is bonded to the sheet 41 in a state where the semiconductor chips 22b and 22d are urged upward by the urging member 46. It is pushed down with being done. As a result, shear stress is intensively generated in the modified regions corresponding to the modified regions K3 and K4 and the planned division lines DL11 and DL12 (FIG. 1A), so that the semiconductor substrate 21 is surrounded by the semiconductor element 24c. Are divided in the thickness direction along the scheduled division lines DL3 and DL4 and the planned division lines DL11 and DL12, so that the semiconductor chip 22c is obtained.
When the suction member 43 is raised, the semiconductor chip 22c is removed from the sheet 41 and pulled upward. The pulled-up semiconductor chip 22c is adsorbed by the adsorbing member 43, and air is blown onto the semiconductor chip 22c using an air cleaning device (not shown) to remove dust generated during the division. Subsequently, with the semiconductor chip 22c adsorbed, the adsorbing member 43 is transferred to a mounting process for mounting on the package by the moving mechanism 44.
Other semiconductor chips 22a, 22b, and 22d to 22f can be divided individually by performing the same operation.

[Effects of Second Embodiment]
(1) Since the adsorption member 43 can surely apply stress to the modified regions formed corresponding to the modified regions K3 and K4 and the planned division lines DL11 and DL12, the semiconductor chip 22a is divided into the planned division lines. A semiconductor chip that can be reliably divided in the thickness direction along DL3, DL4, DL11, DL12 and that there is no remaining crack, so that the yield of the semiconductor chip 22 obtained by dividing the semiconductor substrate 21 can be improved. The manufacturing apparatus 1 and the manufacturing method can be realized.

(2) Since the semiconductor chip 22b, 22d adjacent to the semiconductor chip 22c to which the suction member 43 is attached is provided with a biasing member 45 that biases the semiconductor chip 22b, 22d in the direction opposite to the direction of the force acting by the suction member 43, the suction is performed. When stress is applied by the member 43, the deformation of the semiconductor substrate 21 other than the portion to which the adsorption member 43 is attached is suppressed, and the modification formed corresponding to the modified regions K3 and K4 and the scheduled division lines DL11 and DL12. Since stress can be applied in a concentrated manner in the quality region, only the semiconductor chip 22c can be reliably divided.

(3) Since the adsorbing member 43 is transferred to the mounting process of the semiconductor chip 22c while adsorbing the divided semiconductor chip 22c, it is compared with a method of picking up the semiconductor chip 22c and then transferring it to the mounting process. In addition, the time can be shortened and the pickup of the semiconductor chip 22c can be reliably transferred to the mounting process without failure.

(4) Since the force for attaching the adsorption member 43 to the semiconductor chip 22c may be a force that does not deviate from the direction in which stress is applied when pressing, the force required for attachment can be reduced.

[Modification Example of Second Embodiment]
(1) When stress is applied to the semiconductor substrate 21, if the sheet 41 is expanded in the surface direction (the directions of arrows F5 and F6 in the drawing), the semiconductor substrate 21 is subjected to tensile stress in the surface direction. Since the stress acting on the modified regions formed corresponding to the quality regions K3 and K4 and the scheduled division lines DL11 and DL12 increases, the material can be more easily divided. As a method for expanding the sheet 41, for example, a method using a pressing device M as shown in FIG. 7 can be employed.

(2) In the present embodiment, the configuration in which only the semiconductor chip 22c is divided is illustrated, but the present invention is not limited to this. For example, the suction member 43 may be further disposed on the semiconductor chip 22e, and the biasing member 46 may be further disposed on the semiconductor chip 22f, so that the semiconductor chips 22c, 22d, and 22e can be divided by a single operation. Furthermore, in this embodiment, the semiconductor chip 22c is moved downward using the adsorption member 43. However, when the semiconductor chip 22c is pushed in using a pressing member having only a moving mechanism and transferred to the mounting process. Alternatively, a configuration using only the adsorbing member 43 may be used.

[Third Embodiment]
A semiconductor chip manufacturing apparatus and method according to a third embodiment of the present invention will be described with reference to the drawings. FIG. 5 is an explanatory diagram of a semiconductor chip manufacturing method using the manufacturing apparatus according to the third embodiment, and FIG. 5A is an explanatory diagram of a state before the semiconductor substrate is divided, and FIG. ) Is an explanatory diagram of a state after the division of the semiconductor substrate.
In addition, about the structure similar to 1st Embodiment, while using the same code | symbol, description is abbreviate | omitted.

As shown in FIG. 5A, in this embodiment, the suction member 43 is provided on the back surface 21b side of the semiconductor chip 22c, and sucks the semiconductor chip 22c through the sheet 41.
Next, as in the third embodiment, an urging member 46 that urges the semiconductor chips 22b and 22d upward from the back surface 21b of the semiconductor chips 22b and 22d via the sheet 41 is brought into contact.

As shown in FIG. 5B, when the suction member 43 is lowered by the moving mechanism 44 in a state where the semiconductor chips 22b and 22d are biased upward by the biasing member 46, the semiconductor chip 22c adheres to the sheet 41. It is pulled down with being done. As a result, shear stress is intensively generated in the modified regions corresponding to the modified regions K3 and K4 and the planned division lines DL11 and DL12 (FIG. 1A), so that the semiconductor substrate 21 is surrounded by the semiconductor element 24c. Are divided in the thickness direction along the scheduled division lines DL3 and DL4 and the planned division lines DL11 and DL12, so that the semiconductor chip 22c is obtained.
Here, when the suction member 43 is also provided above the semiconductor substrate 21 to suck the divided semiconductor chip 22c and raise the suction member 43 by the moving mechanism 44, the semiconductor chip 22c is removed from the sheet 41, Pulled upward. The pulled-up semiconductor chip 22c is adsorbed by the adsorbing member 43, and air is blown onto the semiconductor chip 22c using an air cleaning device (not shown) to remove dust generated during the division. Subsequently, with the semiconductor chip 22c adsorbed, the adsorbing member 43 is transferred to a mounting process for mounting on the package by the moving mechanism 44.
Other semiconductor chips 22a, 22b, and 22d to 22f can be divided individually by performing the same operation.

[Effect of the third embodiment]
(1) Since the adsorption member 43 can surely apply stress to the modified regions formed corresponding to the modified regions K3 and K4 and the planned division lines DL11 and DL12, the semiconductor chip 22a is divided into the planned division lines. A semiconductor chip that can be reliably divided in the thickness direction along DL3, DL4, DL11, DL12 and that there is no remaining crack, so that the yield of the semiconductor chip 22 obtained by dividing the semiconductor substrate 21 can be improved. The manufacturing apparatus 1 and the manufacturing method can be realized.

(2) Since the semiconductor chip 22b, 22d adjacent to the semiconductor chip 22c to which the suction member 43 is attached is provided with a biasing member 46 that biases the semiconductor chip 22b, 22d in the direction opposite to the direction of the force acting on the suction member 43, When stress is applied by the member 43, the deformation of the semiconductor substrate 21 other than the portion to which the adsorption member 43 is attached is suppressed, and the modification formed corresponding to the modified regions K3 and K4 and the scheduled division lines DL11 and DL12. Since stress can be applied in a concentrated manner in the quality region, only the semiconductor chip 22c can be reliably divided.

(3) Since the adsorption member 43 is attached to the back surface 21b where the semiconductor element 24 is not formed via the sheet 41, there is no possibility of damaging the semiconductor element 24.

[Modification of Third Embodiment]
(1) When stress is applied to the semiconductor substrate 21, if the sheet 41 is expanded in the surface direction (the directions of arrows F5 and F6 in the drawing), the semiconductor substrate 21 is subjected to tensile stress in the surface direction. Since the stress acting on the modified regions formed corresponding to the quality regions K3 and K4 and the scheduled division lines DL11 and DL12 increases, the material can be more easily divided. As a method for expanding the sheet 41, for example, a method using a pressing device M as shown in FIG. 7 can be employed.

(2) In the present embodiment, the configuration in which only the semiconductor chip 22c is divided is illustrated, but the present invention is not limited to this. For example, the suction member 43 may be further disposed on the semiconductor chip 22e, and the biasing member 46 may be further disposed on the semiconductor chip 22f, so that the semiconductor chips 22c, 22d, and 22e can be divided by a single operation.

[Fourth Embodiment]
A semiconductor chip manufacturing apparatus and method according to a fourth embodiment of the present invention will be described with reference to the drawings. FIG. 6 is an explanatory diagram of a semiconductor chip manufacturing method using the manufacturing apparatus according to the fourth embodiment, and FIG. 6 (A) shows the removal of the part of the semiconductor chip bonded to the sheet held by the frame. FIG. 6B is an explanatory diagram of a state before the division of the semiconductor substrate, and FIG. 6C is an explanatory diagram of a state after the division of the semiconductor substrate.
In addition, about the structure similar to 1st Embodiment, while using the same code | symbol, description is abbreviate | omitted.

  First, as shown in FIG. 6A, a semiconductor substrate 21 from which parts other than the semiconductor chip 22 are removed is prepared. Here, a process of dividing the semiconductor chip 22j formed at the right end in the figure among the four semiconductor chips 22g to 22j arranged on the AA line will be described.

  As shown in FIG. 6B, the semiconductor substrate 21 includes a modified region K3 to K5 corresponding to the planned division lines DL3 to DL5 and a modified region (not shown) corresponding to the planned division line DL13 (FIG. 6A). Is introduced and adhered to the sheet 41. Here, the frame 42 holding the sheet 41 is fixed so as not to move by a fixing means (not shown). The semiconductor chip 22j is adsorbed by the adsorbing member 43 on the substrate surface 21a around the semiconductor element 24.

Subsequently, as shown in FIG. 6C, the moving member 44 moves the adsorption member 43 outward in a direction substantially parallel to the surface direction of the semiconductor substrate 21 to thereby modify the modified region K5 and the planned division line DL13 ( Stress is generated in a modified region (not shown) corresponding to FIG. Thereby, the semiconductor substrate 21 is divided in the thickness direction along the planned division lines DL5 and DL13 set around the semiconductor element 24c, and the semiconductor chip 22j is obtained. The semiconductor chip 22 j is removed from the sheet 41 by moving the suction member 43 by the moving mechanism 44.
The semiconductor chip 22c removed from the sheet 41 is adsorbed by the adsorbing member 43, and air is blown onto the semiconductor chip 22j using an air cleaning device (not shown), thereby removing dust generated during the division. Subsequently, in a state where the semiconductor chip 22j is sucked, the sucking member 43 is transferred to a mounting process for mounting on the package by the moving mechanism 44.
The other semiconductor chips 22g to 22i can be individually divided by performing the same operation.

[Effect of Fourth Embodiment]
(1) Since the adsorption member 43 can surely apply stress to the modified region formed corresponding to the modified region K5 and the planned division line DL13, the semiconductor chip 22a is applied to the planned division lines DL5 and DL13. The semiconductor chip manufacturing apparatus 1 and the manufacturing method can improve the yield of the semiconductor chip 22 obtained by dividing the semiconductor substrate 21 because the crack can be reliably divided along the thickness direction and there is no remaining crack. Can be realized.

(2) Since the adsorbing member 43 is transferred to the mounting process of the semiconductor chip 22j in a state where the divided semiconductor chip 22j is adsorbed, it is compared with a method of picking up the semiconductor chip 22j after dividing and transferring it to the mounting process. In addition, the time can be shortened and the pickup of the semiconductor chip 22c can be reliably transferred to the mounting process without failure.

(3) When the semiconductor chip 22j is divided, the semiconductor chip 22j moves relative to the surface direction of the semiconductor substrate 21 and away from the semiconductor substrate 21, so that the divided surfaces are not rubbed. There is no possibility of chipping at 22j.

[Modification of Fourth Embodiment]
(1) When stress is applied to the semiconductor substrate 21, if the sheet 41 is expanded in the surface direction (the directions of arrows F5 and F6 in the drawing), the semiconductor substrate 21 is subjected to tensile stress in the surface direction. Since the stress acting on the modified region formed corresponding to the mass region K5 and the planned division line DL13 is increased, it can be divided more easily. As a method for expanding the sheet 41, for example, a method using a pressing device M as shown in FIG. 7 can be employed.

[Other Embodiments]
(1) In each of the above embodiments, the configuration in which the semiconductor chip 22 is adsorbed using the adsorbing member 43 is adopted. However, other methods, for example, a member having the moving mechanism 44 by using a method such as adhesion or welding are used. The semiconductor chip 22 may be fixed.

(2) Some semiconductor chips may be used as dummy chips for dividing other semiconductor chips. For example, by setting the semiconductor chip 22c shown in FIG. 3 as a dummy chip and separating the semiconductor chip 22c from the semiconductor substrate 21, one side of the adjacent semiconductor chips 22b and 22d can be divided. The dummy chip may be set in advance, or a semiconductor chip or the like recognized as defective in the inspection may be set as the dummy chip.

(3) When stress is applied to the modified region K by the adsorbing member 43, vibration may be applied to the semiconductor substrate 21 using vibration means such as an ultrasonic vibrator. When this configuration is used, cracks can be propagated from the modified region K by the physical action of vibration, and the force required for division can be reduced, so that the semiconductor substrate 21 can be easily divided. The yield of the semiconductor chip 22 can be improved.

(4) When stress is applied to the modified region K by the adsorption member 43, the semiconductor substrate 21 may be heated using a heating means such as a heater. When this configuration is used, a thermal stress can be applied to the modified region K, and the force necessary for the division can be reduced. Therefore, the semiconductor substrate 21 can be easily divided, and the semiconductor chip 22 can be divided. Yield can be improved.

(5) Although the semiconductor substrate made of only silicon is used as the semiconductor substrate 21, the application of the present invention is not limited to this. For example, an oxide film made of silicon oxide is used as the substrate surface of the semiconductor substrate 21. The present invention can also be applied to those formed in 21a and SOI (Silicon On Insulator) wafers.

[Correspondence between each claim and embodiment]
The reforming region K corresponds to the region described in claim 1, and the adsorption member 43 corresponds to the predetermined member. The urging members 45 and 46 correspond to the urging means according to the fifth aspect, and the frame 42 corresponds to the holding means according to the sixth aspect.

It is a schematic diagram which shows the structural example of the semiconductor substrate divided | segmented with the manufacturing apparatus of the semiconductor chip of this invention. FIG. 1A is an explanatory plan view of a semiconductor substrate bonded to a sheet held by a frame, and FIG. 1B is a cross-sectional view taken along the line 1B-1B in FIG. It is explanatory drawing of the manufacturing apparatus of the semiconductor chip which irradiates a semiconductor substrate with a laser beam. FIG. 3A is an explanatory diagram of a semiconductor chip manufacturing method using the manufacturing apparatus according to the first embodiment, FIG. 3A is an explanatory diagram of a state before a semiconductor substrate is divided, and FIG. It is explanatory drawing of the state after the division | segmentation of a board | substrate. FIG. 4A is an explanatory view of a semiconductor chip manufacturing method using the manufacturing apparatus according to the second embodiment, FIG. 4A is an explanatory view of a state before the semiconductor substrate is divided, and FIG. It is explanatory drawing of the state after the division | segmentation of a board | substrate. It is explanatory drawing of the manufacturing method of the semiconductor chip using the manufacturing apparatus which concerns on 3rd Embodiment, FIG. 5 (A) is explanatory drawing of the state before the division | segmentation of a semiconductor substrate, FIG.5 (B) is a semiconductor. It is explanatory drawing of the state after the division | segmentation of a board | substrate. It is explanatory drawing of the manufacturing method of the semiconductor chip using the manufacturing apparatus which concerns on 4th Embodiment, FIG. 6 (A) is the semiconductor substrate which removed the part of the semiconductor chip adhere | attached on the sheet | seat hold | maintained at the flame | frame. FIG. 6B is an explanatory diagram of a state before the semiconductor substrate is divided, and FIG. 6C is an explanatory diagram of a state after the semiconductor substrate is divided. It is explanatory drawing which shows an example of the manufacturing apparatus of the conventional semiconductor chip. FIG. 7A is an explanatory diagram showing a state in which the semiconductor substrate is bonded to the sheet and the outer peripheral portion of the sheet is held by the frame. FIG. 7B is a diagram illustrating the semiconductor substrate divided into semiconductor chips by the pressing device. It is explanatory drawing of the process to do.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Manufacturing apparatus 21 Semiconductor substrate 22, 22a-22j Semiconductor chip 24, 24c Semiconductor element 31 Laser head 41 Sheet 42 Frame (holding means)
43 Adsorption member (predetermined member)
44 Moving mechanism 45, 46 Biasing member (biasing means)
DL, DL1 to DL7 Scheduled division lines K, K1 to K7 Modified region (region)
L Laser beam M Pressing device P Condensing point

Claims (13)

In a semiconductor chip manufacturing apparatus for obtaining a semiconductor chip having the semiconductor element by dividing a semiconductor substrate in which a plurality of semiconductor elements are formed on one substrate surface in a thickness direction,
Lines to be divided are set on the substrate surface between the semiconductor elements, and in the thickness direction corresponding to the lines, the stress necessary for dividing in the thickness direction is reduced. Area is formed,
A predetermined member is attached to a portion of the substrate surface surrounded by the periphery of the semiconductor element and the line, and a force acting in a direction away from the substrate surface is applied to the predetermined member, and the region A semiconductor chip manufacturing apparatus, wherein a shearing stress is generated to divide the semiconductor substrate in the thickness direction of the line to obtain a semiconductor chip corresponding to a portion to which the predetermined member is attached. . In a semiconductor chip manufacturing apparatus for obtaining a semiconductor chip having the semiconductor element by dividing a semiconductor substrate in which a plurality of semiconductor elements are formed on one substrate surface in a thickness direction,
Lines to be divided are set on the substrate surface between the semiconductor elements, and in the thickness direction corresponding to the lines, the stress necessary for dividing in the thickness direction is reduced. Area is formed,
A predetermined member is attached to a portion of the substrate surface surrounded by the periphery of the semiconductor element and the line, and a force acting in the direction of pressing the substrate surface against the predetermined member is applied. Manufacturing a semiconductor chip, wherein a shearing stress is generated in a region to divide the semiconductor substrate in the thickness direction of the line to obtain a semiconductor chip corresponding to a portion to which the predetermined member is attached. apparatus. In a semiconductor chip manufacturing apparatus for obtaining a semiconductor chip having the semiconductor element by dividing a semiconductor substrate in which a plurality of semiconductor elements are formed on one substrate surface in a thickness direction,
Lines to be divided are set on the substrate surface between the semiconductor elements, and in the thickness direction corresponding to the lines, the stress necessary for dividing in the thickness direction is reduced. Area is formed,
A predetermined member is attached to a portion of the substrate surface surrounded by the periphery of the semiconductor element at the end of the semiconductor substrate and the line, and with respect to the predetermined member in the surface direction of the semiconductor substrate. The semiconductor substrate is divided in the thickness direction of the line by applying a force acting in a direction away from the semiconductor substrate to generate stress in the region, and the predetermined member is attached. A semiconductor chip manufacturing apparatus characterized in that a semiconductor chip corresponding to a portion is obtained. In a semiconductor chip manufacturing apparatus for obtaining a semiconductor chip having the semiconductor element by dividing a semiconductor substrate in which a plurality of semiconductor elements are formed on one substrate surface in a thickness direction,
Lines to be divided are set on the substrate surface between the semiconductor elements, and in the thickness direction corresponding to the lines, the stress necessary for dividing in the thickness direction is reduced. Area is formed,
A predetermined member is attached at a position corresponding to a portion surrounded by the line on the other substrate surface of the semiconductor substrate, and a force acting on the predetermined member in a direction away from the other substrate surface is applied. Generating a semiconductor chip corresponding to a portion to which the predetermined member is attached by dividing the semiconductor substrate in the thickness direction of the line by generating shear stress in the region. Manufacturing equipment.   A portion surrounded by at least one semiconductor element adjacent to a semiconductor element corresponding to a portion to which the predetermined member is attached and the line, or a portion of the semiconductor substrate corresponding to a portion surrounded by the line The biasing means for biasing in the direction opposite to the direction of the force acting by the predetermined member is provided on the substrate surface side of the other surface. Semiconductor chip manufacturing equipment. A sheet for bonding the other substrate surface of the semiconductor substrate;
Holding means for holding the outer periphery of the sheet;
6. The semiconductor chip manufacturing apparatus according to claim 1, further comprising an expansion unit that expands the sheet held by the holding unit.   7. The pressing device according to claim 6, further comprising a pressing unit that presses the sheet held by the holding unit from the back surface, wherein the sheet is expanded by pressing the back surface of the sheet by the pressing unit. Semiconductor chip manufacturing equipment.   While moving the laser head that irradiates the laser light relative to the semiconductor substrate along the line, the laser light is irradiated with a laser beam that is focused on the inside of the semiconductor substrate. A modified region forming means for forming a modified region by photon absorption as the region is provided, and the semiconductor substrate that has undergone the modified region forming step is divided starting from the modified region. The semiconductor chip manufacturing apparatus according to any one of claims 1 to 7.   2. The semiconductor chip is transferred to the mounting step of the semiconductor chip by a moving mechanism that moves the predetermined member in a state in which the semiconductor chip into which the predetermined member is divided is attached. The semiconductor chip manufacturing apparatus according to claim 8. Preparing a semiconductor substrate having a plurality of semiconductor elements formed on one substrate surface;
In the method of manufacturing a semiconductor chip comprising a dividing step of obtaining the semiconductor chip having the semiconductor element by dividing the semiconductor substrate in the thickness direction,
In the semiconductor substrate, a line to be divided is set on the substrate surface between the semiconductor elements, and a stress necessary for dividing in the thickness direction in the thickness direction corresponding to the line is set. A region for lowering is formed,
In the dividing step, a predetermined member is attached to a portion of the substrate surface surrounded by the periphery of the semiconductor element and the line, and a force acting on the predetermined member in a direction away from the substrate surface is applied. In addition, the step of dividing the semiconductor substrate in the thickness direction of the line by generating shear stress in the region to obtain a semiconductor chip corresponding to a portion to which the predetermined member is attached. A method of manufacturing a semiconductor chip. Preparing a semiconductor substrate having a plurality of semiconductor elements formed on one substrate surface;
In the method of manufacturing a semiconductor chip comprising a dividing step of obtaining the semiconductor chip having the semiconductor element by dividing the semiconductor substrate in the thickness direction,
In the semiconductor substrate, a line to be divided is set on the substrate surface between the semiconductor elements, and a stress necessary for dividing in the thickness direction in the thickness direction corresponding to the line is set. A region for lowering is formed,
In the dividing step, a predetermined member is attached to a portion of the substrate surface surrounded by the periphery of the semiconductor element and the line, and a force acting in a direction of pressing the substrate surface against the predetermined member. And generating a shear stress in the region to divide the semiconductor substrate in the thickness direction of the line to obtain a semiconductor chip corresponding to a portion to which the predetermined member is attached. A method for manufacturing a semiconductor chip. Preparing a semiconductor substrate having a plurality of semiconductor elements formed on one substrate surface;
In the method of manufacturing a semiconductor chip comprising a dividing step of obtaining the semiconductor chip having the semiconductor element by dividing the semiconductor substrate in the thickness direction,
In the semiconductor substrate, a line to be divided is set on the substrate surface between the semiconductor elements, and a stress necessary for dividing in the thickness direction in the thickness direction corresponding to the line is set. A region for lowering is formed,
In the dividing step, a predetermined member is attached to a portion of the substrate surface surrounded by the periphery of the semiconductor element at the end of the semiconductor substrate and the line, and the semiconductor is applied to the predetermined member. By applying a force acting in the surface direction of the substrate and away from the semiconductor substrate to generate stress in the region, the semiconductor substrate is divided in the thickness direction of the line, and the predetermined A method of manufacturing a semiconductor chip, comprising a step of obtaining a semiconductor chip corresponding to a portion to which a member is attached. Preparing a semiconductor substrate having a plurality of semiconductor elements formed on one substrate surface;
In the method of manufacturing a semiconductor chip comprising a dividing step of obtaining the semiconductor chip having the semiconductor element by dividing the semiconductor substrate in the thickness direction,
In the semiconductor substrate, a line to be divided is set on the substrate surface between the semiconductor elements, and a stress necessary for dividing in the thickness direction in the thickness direction corresponding to the line is set. A region for lowering is formed,
The dividing step is performed by attaching a predetermined member at a position corresponding to a portion surrounded by the line on the other substrate surface of the semiconductor substrate and moving the predetermined member away from the other substrate surface. A step of generating a shearing stress in the region by applying a force to divide the semiconductor substrate in the thickness direction of the line to obtain a semiconductor chip corresponding to a portion to which the predetermined member is attached. A method for manufacturing a semiconductor chip, comprising:

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