JP2007031619A - Resin composition for optical element sealing use - Google Patents
Resin composition for optical element sealing use Download PDFInfo
- Publication number
- JP2007031619A JP2007031619A JP2005219518A JP2005219518A JP2007031619A JP 2007031619 A JP2007031619 A JP 2007031619A JP 2005219518 A JP2005219518 A JP 2005219518A JP 2005219518 A JP2005219518 A JP 2005219518A JP 2007031619 A JP2007031619 A JP 2007031619A
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- silsesquioxane
- bond
- unsaturated bond
- carbon unsaturated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- BMVXCPBXGZKUPN-UHFFFAOYSA-N CCCCCCN Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Led Device Packages (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Silicon Polymers (AREA)
Abstract
Description
本発明は、光素子封止用樹脂組成物に関し、詳細には、透明性、耐UV性に優れ、しかも、耐熱着色性に優れた、硬化性シルセスキオキサンを主成分とする光素子封止用樹脂組成物に関する。 TECHNICAL FIELD The present invention relates to a resin composition for encapsulating an optical element, and more specifically, an optical element encapsulating mainly composed of a curable silsesquioxane having excellent transparency and UV resistance and excellent heat-resistant colorability. The present invention relates to a stopping resin composition.
光素子には各種レーザー(特に半導体レーザー)や発光ダイオード(LED)等の発光素子、受光素子、複合光素子、光集積回路等があり、これらの光素子には封止樹脂組成物が使用されている。近年、発光素子においては発光のピーク波長が短波長のものが開発されるに至り、緑〜青色発光素子(LED等)が広く使用されており、これに対応して光素子は短波長光に適合するように技術開発がなされている。最近、このような発光のピーク波長の短い発光素子の高輝度化が飛躍的に進んでおり、これに伴い光素子、例えば、発光電子デバイスの、発熱量がさらに大きくなっていく傾向にあり、封止樹脂に求められる性能としては、耐UV性、耐熱性等において一層高度になっている。 Optical elements include various lasers (especially semiconductor lasers) and light-emitting elements such as light-emitting diodes (LEDs), light-receiving elements, composite optical elements, and optical integrated circuits. A sealing resin composition is used for these optical elements. ing. In recent years, light emitting devices having a short peak emission wavelength have been developed, and green to blue light emitting devices (LEDs, etc.) have been widely used. Technological development has been made to suit. Recently, there has been a dramatic increase in the brightness of light emitting elements having a short peak wavelength of light emission, and along with this, the amount of heat generated by optical elements, for example, light emitting electronic devices, tends to increase further. The performance required for the sealing resin is higher in terms of UV resistance, heat resistance, and the like.
従来、LED等の光素子のための封止樹脂として透明エポキシ樹脂が多用されてきたが、耐熱性が高い一方で耐UV性が低く、経時に黄変し易い性質があった。黄変は光素子の輝度低下の原因となるため、高輝度化が進む光素子用の封止材としてエポキシ樹脂を適応することが困難な状況にある。このエポキシ樹脂の欠点を克服するものとして、エポキシ環等の置換基を含有するシルセスキオキサンからなる光素子用封止材が提案された(例えば、特許文献1参照。)。
しかしながら、エポキシ環の硬化系として使用されることが多い酸無水物硬化系においては硬化促進剤が熱により着色する原因ともなり得る。そこで、エポキシ環を使用しない硬化系を持つシルセスキオキサンを使用した封止樹脂組成物の開発が望まれる。しかし、一般にシルセスキオキサン誘導体の製造には白金触媒が使用されることが多く、この白金が硬化物の熱着色の原因となることも知られている。 However, in an acid anhydride curing system that is often used as an epoxy ring curing system, the curing accelerator may be a cause of coloration by heat. Therefore, development of a sealing resin composition using silsesquioxane having a curing system that does not use an epoxy ring is desired. However, in general, a platinum catalyst is often used for producing a silsesquioxane derivative, and it is also known that this platinum causes thermal coloring of a cured product.
上述の現状に鑑み、本発明は、透明性、耐UV性に優れ、しかも、耐熱着色性に優れた光素子封止用樹脂組成物を提供することを目的とする。 In view of the above-described present situation, an object of the present invention is to provide a resin composition for sealing an optical element which is excellent in transparency and UV resistance and excellent in heat-resistant coloring.
本発明者らは上記課題を解決するべく鋭意検討した結果、特定種類の側鎖を導入したシルセスキオキサン誘導体を樹脂成分とした封止樹脂が優れた耐熱着色性を持つことを見出し、この知見に基づいて本発明を完成した。すなわち、本発明は、下記一般式(I):
(R1−SiO3/2)a−n(X1−SiO3/2)n (I)
(式中、R1は、脂肪族炭素−炭素不飽和結合を含有する炭素数2〜12(ただし、脂肪族炭素−炭素不飽和結合中の炭素を含む。)の炭化水素基、又は、脂肪族炭素−炭素不飽和結合を含有しH−Si結合を含有しないシリルオキシ基である。R1が複数ある場合は、それぞれ、同一でも異なっていてもよい。X1は、H−Si結合及び脂肪族炭素−炭素不飽和結合を含有しない1価の有機基である。ただし、X1は水素原子ではない。X1が複数ある場合は、それぞれ、同一でも異なっていてもよい。aは、6〜14の偶数である。nはaより小さい正の整数である。)で表される脂肪族炭素−炭素不飽和結合を含有しH−Si結合を含有しない籠型構造体の液状のシルセスキオキサン(A)、及び、下記一般式(II):
(R2−SiO3/2)a−n(X2−SiO3/2)n (II)
(式中、R2は、水素原子を表すか又はH−Si結合を含有し脂肪族炭素−炭素不飽和結合を含有しない1価の有機基を表す。R2が複数ある場合は、それぞれ、同一でも異なっていてもよい。X2は、H−Si結合及び脂肪族炭素−炭素不飽和結合を含有しない1価の有機基である。ただし、X2は水素原子ではない。X2が複数ある場合は、それぞれ、同一でも異なっていてもよい。aは、6〜14の偶数である。nはaより小さい正の整数である。)で表されるH−Si結合を含有し脂肪族炭素−炭素不飽和結合を含有しない籠型構造体の液状のシルセスキオキサン(B)からなる群から選択される少なくとも1種のシルセスキオキサンを樹脂成分として含有する光素子封止用樹脂組成物である。
本発明はまた、上記封止用樹脂組成物で封止されてなる光素子でもある。
As a result of intensive studies to solve the above-mentioned problems, the present inventors have found that a sealing resin having a silsesquioxane derivative having a specific type of side chain introduced as a resin component has excellent heat-resistant coloring properties. The present invention has been completed based on the findings. That is, the present invention provides the following general formula (I):
(R1-SiO 3/2) a- n (X1-SiO 3/2) n (I)
(In the formula, R1 is a hydrocarbon group having 2 to 12 carbon atoms (including carbon in the aliphatic carbon-carbon unsaturated bond) containing an aliphatic carbon-carbon unsaturated bond, or aliphatic. A silyloxy group containing a carbon-carbon unsaturated bond and no H-Si bond, and when there are a plurality of R 1 s, they may be the same or different, and X 1 is an H-Si bond and an aliphatic carbon- It is a monovalent organic group containing no carbon unsaturated bond, provided that X1 is not a hydrogen atom, and when there are a plurality of X1, they may be the same or different, and a is an even number of 6 to 14. N is a positive integer smaller than a.) Liquid silsesquioxane (A) having a cage structure containing an aliphatic carbon-carbon unsaturated bond and no H-Si bond And the following general formula (II):
(R2-SiO3 / 2 ) a-n (X2-SiO3 / 2 ) n (II)
(In the formula, R2 represents a hydrogen atom or a monovalent organic group containing an H-Si bond and no aliphatic carbon-carbon unsaturated bond. X2 is a monovalent organic group that does not contain an H-Si bond and an aliphatic carbon-carbon unsaturated bond, provided that X2 is not a hydrogen atom. A may be the same or different, a is an even number from 6 to 14. n is a positive integer smaller than a and contains an H—Si bond and is aliphatic carbon-carbon unsaturated. A resin composition for encapsulating an optical element comprising, as a resin component, at least one kind of silsesquioxane selected from the group consisting of a liquid silsesquioxane (B) having a saddle type structure that does not contain a bond.
The present invention is also an optical element that is sealed with the sealing resin composition.
(1)本発明の封止樹脂組成物は上述の構成により、ヒドロシリル化反応により架橋することができるので、硬化剤や硬化促進剤の使用により熱着色する現象を回避できる。
(2)本発明の封止樹脂組成物は上述の構成により、製造工程における残存等により白金を含有しているシルセスキオキサン誘導体であっても熱着色を防止することができる。
(3)本発明の封止樹脂組成物は上述の構成により、炭素−炭素不飽和結合を含有するシルセスキオキサン誘導体及び/又はH−Si結合を含有するシルセスキオキサン誘導体を液状にてヒドロシリル化反応させる硬化系を構成することができる。
(4)本発明の封止樹脂組成物は上述の構成により、透明性、耐熱性、耐UV性及び耐熱着色性を併せ持ち、高輝度の光素子用の封止材に要求される必要性能をそれぞれ充分な水準で満たすことができる。
(1) Since the sealing resin composition of the present invention can be crosslinked by a hydrosilylation reaction with the above-described configuration, the phenomenon of thermal coloring due to the use of a curing agent or a curing accelerator can be avoided.
(2) With the above-described configuration, the sealing resin composition of the present invention can prevent thermal coloring even if it is a silsesquioxane derivative containing platinum due to remaining in the manufacturing process.
(3) The sealing resin composition of the present invention is a silsesquioxane derivative containing a carbon-carbon unsaturated bond and / or a silsesquioxane derivative containing an H-Si bond in a liquid state in the above-described configuration. A curing system for hydrosilylation reaction can be constructed.
(4) The sealing resin composition of the present invention has the necessary performance required for a sealing material for high-brightness optical elements, having transparency, heat resistance, UV resistance, and heat-resistant coloration due to the above-described configuration. Each can be satisfied at a sufficient level.
本発明の光素子封止用樹脂組成物は、上記シルセスキオキサン(A)及びシルセスキオキサン(B)からなる群から選択される少なくとも1種のシルセスキオキサンを樹脂成分として含有する。本発明における上記シルセスキオキサン(A)においては、上記一般式(I)中、R1は、脂肪族炭素−炭素不飽和結合(脂肪族炭素−炭素二重結合又は脂肪族炭素−炭素三重結合)(以下、単に、炭素−炭素不飽和結合という。)を含有する炭素数2〜12(ただし、炭素−炭素不飽和結合中の炭素を含む。)の炭化水素基、又は、炭素−炭素不飽和結合を含有しH−Si結合を含有しないシリルオキシ基である。R1が複数ある場合は、それぞれ、同一でも異なっていてもよい。 The resin composition for sealing an optical element of the present invention contains at least one silsesquioxane selected from the group consisting of the silsesquioxane (A) and the silsesquioxane (B) as a resin component. . In the silsesquioxane (A) in the present invention, in the general formula (I), R1 is an aliphatic carbon-carbon unsaturated bond (aliphatic carbon-carbon double bond or aliphatic carbon-carbon triple bond). ) (Hereinafter simply referred to as a carbon-carbon unsaturated bond) hydrocarbon group having 2 to 12 carbon atoms (including carbon in the carbon-carbon unsaturated bond) or carbon-carbon unsaturated group. It is a silyloxy group containing a saturated bond and no H-Si bond. When there are a plurality of R1, they may be the same or different.
上記炭素−炭素不飽和結合を含有する炭素数2〜12の炭化水素基としては、例えば、メチル、エチル、プロピル、イソプロピル、ブチル、イソブチル、s−又はt−ブチル、ペンチル、イソペンチル、ネオペンチル、オクチル、イソオクチル、デシル等のアルキル基に炭素−炭素不飽和結合、例えば、ビニル、エチニル等、を置換基として含有するもの(例えば、アリル、1−プロペニル、イソプロペニル等);ビニル、1−ブテニル、2−ブテニル、2−ペンテニル等の不飽和脂肪族炭化水素基;3−シクロヘキセニル、5−ビシクロヘプテニル、シクロペンテニル等の炭素−炭素不飽和結合含有不飽和脂環式炭化水素基;スチリル、シンナミル等の脂肪族不飽和結合含有芳香族炭化水素基等を挙げることができる。これらのうち、炭素数2〜8のものが好ましく、2〜6のものがより好ましい。なかでも、CH2=CH−(CH2)n−で表される基(ただし、nは1〜8の整数である。)(例えば、ビニル、アリル、3−ブテニル等)、3−シクロヘキセニル、5−ビシクロヘプテニル、シクロペンテニル、5−ヘキセニル等が好ましい。 Examples of the C2-C12 hydrocarbon group containing the carbon-carbon unsaturated bond include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, s- or t-butyl, pentyl, isopentyl, neopentyl, and octyl. , An alkyl group such as isooctyl, decyl and the like containing a carbon-carbon unsaturated bond such as vinyl, ethynyl, etc. as a substituent (eg, allyl, 1-propenyl, isopropenyl, etc.); vinyl, 1-butenyl, Unsaturated aliphatic hydrocarbon groups such as 2-butenyl and 2-pentenyl; unsaturated alicyclic hydrocarbon groups containing a carbon-carbon unsaturated bond such as 3-cyclohexenyl, 5-bicycloheptenyl and cyclopentenyl; styryl; An aliphatic unsaturated bond-containing aromatic hydrocarbon group such as cinnamyl can be exemplified. Of these, those having 2 to 8 carbon atoms are preferred, and those having 2 to 6 carbon atoms are more preferred. Among them, a group represented by CH2 = CH- (CH2) n- (where n is an integer of 1 to 8) (for example, vinyl, allyl, 3-butenyl, etc.), 3-cyclohexenyl, 5 -Bicycloheptenyl, cyclopentenyl, 5-hexenyl and the like are preferable.
上記炭素−炭素不飽和結合を含有する炭素数2〜12の炭化水素基を導入するには、例えば、上記炭化水素基を有する3官能有機ケイ素モノマーを使用して籠型構造のシルセスキオキサンを製造する方法、籠型構造のシルセスキオキサンのSiに結合する水素原子とジビニル化合物やトリビニル化合物等とを反応させる方法等を挙げることができる。なお、籠型構造のシルセスキオキサンの骨格構造は各種の方法で合成でき、例えば、特開2004−359933号公報に記載の方法等を適用することができる。 In order to introduce the hydrocarbon group having 2 to 12 carbon atoms containing the carbon-carbon unsaturated bond, for example, a silsesquioxane having a cage structure using a trifunctional organosilicon monomer having the hydrocarbon group is used. And a method of reacting a hydrogen atom bonded to Si in a silsesquioxane having a cage structure with a divinyl compound, a trivinyl compound, or the like. Note that the skeleton structure of the silsesquioxane having a cage structure can be synthesized by various methods. For example, the method described in JP-A-2004-359933 can be applied.
上記炭素−炭素不飽和結合を含有しH−Si結合を含有しないシリルオキシ基としては、例えば、ジメチルビニルシリルオキシ基、アリルジメチルシリルオキシ基、CH2=CH−(CH2)4−Si(Me)2−O−、3−シクロヘキセニルジメチルシリルオキシ基等が挙げられる。 Examples of the silyloxy group containing a carbon-carbon unsaturated bond and not containing an H-Si bond include dimethylvinylsilyloxy group, allyldimethylsilyloxy group, CH2 = CH- (CH2) 4-Si (Me) 2 -O-, 3-cyclohexenyl dimethylsilyloxy group, etc. are mentioned.
上記炭素−炭素不飽和結合を含有しH−Si結合を含有しないシリルオキシ基を導入するには、例えば、上記シリルオキシ基を有する3官能有機ケイ素モノマーを使用して籠型構造のシルセスキオキサンを製造する方法、R4N+(Rは1価の有機基)を対カチオンとして有する籠型構造のシリケート((Si8O20)8−・8R4N+)に対してジメチルシリルクロリド(HSi(Me)2Cl)等を脱塩反応させることにより導入する方法等を挙げることができる。 In order to introduce a silyloxy group containing the carbon-carbon unsaturated bond and not containing an H-Si bond, for example, a trifunctional organosilicon monomer having the silyloxy group is used to form a silsesquioxane having a cage structure. method for producing, R4 N + (R is a monovalent organic group) silicate cage structure having as a counter cation ((Si 8 O 20) 8- · 8R 4 N +) with respect dimethylsilyl chloride (HSi (Me ) 2Cl) and the like can be introduced by desalting reaction.
本発明における上記シルセスキオキサン(A)においては、上記一般式(I)中、X1は、H−Si結合及び炭素−炭素不飽和結合を含有しない1価の有機基である。ただし、X1は水素原子ではない。X1が複数ある場合は、それぞれ、同一でも異なっていてもよい。 In the said silsesquioxane (A) in this invention, in said general formula (I), X1 is a monovalent organic group which does not contain a H-Si bond and a carbon-carbon unsaturated bond. However, X1 is not a hydrogen atom. When there are a plurality of X1, they may be the same or different.
上記H−Si結合及び炭素−炭素不飽和結合を含有しない1価の有機基としては、例えば、炭素−炭素不飽和結合を含有していない炭素数1〜20の炭化水素基(例えば、メチル、イソブチル、オクチル、フェニル、ベンジル、トリル、キシリル、クメニル、シクロヘキシル、アダマンチル等)、炭素−炭素不飽和結合以外の官能基を含有する炭素数1〜20の炭化水素基(例えば、3−ヒドロキシプロピル、γ−グリシドキシプロピル、2−メトキシシリルエチル、2−トリエトキシシリルエチル等)、アルキル置換オルガノシロキシエチル基(例えば、ヘプタメチルトリシロキシエチル基、ブチルジメチルシリルエチル基、ポリ(ジメチルシロキシ)エチル基等)等を挙げることができる。 Examples of the monovalent organic group that does not contain the H-Si bond and the carbon-carbon unsaturated bond include, for example, a hydrocarbon group having 1 to 20 carbon atoms that does not contain a carbon-carbon unsaturated bond (for example, methyl, Isobutyl, octyl, phenyl, benzyl, tolyl, xylyl, cumenyl, cyclohexyl, adamantyl, etc.), a C1-C20 hydrocarbon group containing a functional group other than a carbon-carbon unsaturated bond (for example, 3-hydroxypropyl, γ-glycidoxypropyl, 2-methoxysilylethyl, 2-triethoxysilylethyl, etc.), alkyl-substituted organosiloxyethyl groups (for example, heptamethyltrisiloxyethyl group, butyldimethylsilylethyl group, poly (dimethylsiloxy) ethyl) Group, etc.).
上記H−Si結合及び炭素−炭素不飽和結合を含有しない1価の有機基を導入するには、例えば、ビニル基を置換基として含有するシルセスキオキサン誘導体を原料して、ヘプタメチルトリシロキサン等のH−Si結合を有するアルキル置換オルガノシロキサンをヒドロシリル化反応させる等の方法をとることができる。 In order to introduce the monovalent organic group not containing the H-Si bond and the carbon-carbon unsaturated bond, for example, a silsesquioxane derivative containing a vinyl group as a substituent is used as a raw material, and heptamethyltrisiloxane is used. A method such as hydrosilylation reaction of an alkyl-substituted organosiloxane having an H—Si bond such as can be employed.
上記シルセスキオキサン(A)においては、上記一般式(I)中、aは、6〜14の偶数である。nはaより小さい正の整数である。aが6の上記シルセスキオキサン(A)は三角柱型構造式を有し、aが8のものは6面体型構造式を有し、aが10のものは5角柱型構造式を有し、aが12のものは4角形4面と5角形4面とからなる8面体型構造式を有し、aが14のものは4角形3面と5角形6面とからなる9面体型構造式を有する。好ましくはaは8、10又は12であり、より好ましくはaは8である。nはaより小さい正の整数であり、従って、1以上であってaよりも1小さい整数の範囲内の整数である。好ましくは2以上であってaよりも2小さい整数であり、より好ましくは3以上であってaよりも3小さい整数である。 In the said silsesquioxane (A), a is an even number of 6-14 in the said general formula (I). n is a positive integer smaller than a. The silsesquioxane (A) in which a is 6 has a triangular prism type structural formula, the one in which a is 8 has a hexahedral structural formula, and the one in which a has 10 has a pentagonal structural formula. , A having 12 has an octahedral structure composed of four sides of a quadrangle and four sides of pentagon, and those having a of 14 have a nine-sided structure having a shape of three sides of a quadrangle and six sides of a pentagon. Has the formula Preferably a is 8, 10 or 12, more preferably a is 8. n is a positive integer smaller than a, and is therefore an integer within a range of 1 or more and 1 smaller than a. Preferably, it is an integer that is 2 or more and 2 smaller than a, more preferably an integer that is 3 or more and 3 smaller than a.
本発明において上記シルセスキオキサン(A)は、上述の条件を満たし、かつ、液状である必要がある。一般的に、籠型構造のシルセスキオキサンにおいて置換基を持たないか又は比較的小さな同一置換基でSi上のすべての水素原子を置換した場合に固体であることが通常であり、異なる置換基を導入すると固体であったものが液体になることが現象的に知られている。例えば、aが8の籠型構造のシルセスキオキサンにおいてすべての置換基がビニルであるか、又は、置換基を持たない場合は、固体であるが、他の種類の置換基を部分的に導入すると、8つの置換可能部位のうち導入する部位が1〜5に増えるにつれて、固体〜粘土状〜高粘度液体〜低粘度液体となる。上記シルセスキオキサン(A)は、好ましくは室温で液状である。この観点から、aが8の場合、nは3〜5が好ましい。 In the present invention, the silsesquioxane (A) needs to satisfy the above conditions and be in a liquid state. Generally, in a silsesquioxane having a cage structure, it is usually solid when all hydrogen atoms on Si are substituted with no substituents or relatively small identical substituents. It is known from a phenomenon that when a group is introduced, a solid becomes a liquid. For example, in a silsesquioxane having a cage structure in which a is 8, if all the substituents are vinyl or have no substituents, they are solid, but other types of substituents are partially When it introduce | transduces, it will become solid-clay-like-high-viscosity liquid-low-viscosity liquid as the site | parts introduce | transduced to 1-5 among eight substitutable sites. The silsesquioxane (A) is preferably liquid at room temperature. From this viewpoint, when a is 8, n is preferably 3 to 5.
上記シルセスキオキサン(A)の具体例としては、例えば、R1がビニルジメチルシロキシ基、X1がヘプタメチルトリシロキシ基であり、aが8、nが3〜5のもの;R1がビニルジメチルシロキシ基、X1がポリ(ジメチルシロキシ)エチル基であり、aが8、nが3〜5のもの、等が挙げられる。 Specific examples of the silsesquioxane (A) include, for example, R1 is a vinyldimethylsiloxy group, X1 is a heptamethyltrisiloxy group, a is 8, n is 3-5; R1 is vinyldimethylsiloxy Group, X1 is a poly (dimethylsiloxy) ethyl group, a is 8, n is 3-5, and the like.
本発明においては、上記シルセスキオキサン(A)としては、上述のものの1種又は2種以上、例えば、aの数が異なるもの同士、aの数が同一でもnの数が異なるもの同士、官能基を含有しない基の種類が異なるもの同士、を併用することができる。好ましくは、aの数が同じ化合物同士である。 In the present invention, as the silsesquioxane (A), one or more of the above-mentioned ones, for example, those having different numbers of a, those having the same number of a but different numbers of n, Different types of groups that do not contain a functional group can be used in combination. Preferably, the number of a is the same compound.
本発明における上記シルセスキオキサン(B)においては、上記一般式(II)中、R2は、水素原子を表すか又はH−Si結合を含有し炭素−炭素不飽和結合を含有しない1価の有機基を表す。R2が複数ある場合は、それぞれ、同一でも異なっていてもよい。 In the silsesquioxane (B) in the present invention, in the general formula (II), R2 represents a hydrogen atom or a monovalent that does not contain a carbon-carbon unsaturated bond. Represents an organic group. When there are a plurality of R2, they may be the same or different.
上記H−Si結合を含有し炭素−炭素不飽和結合を含有しない1価の有機基としては、例えば、H−Si(Me)2−O−で表される基(ただし、Meはメチル基を表す。)、H−Si(Me)2OSi(Me)2O−で表される基等を挙げることができる。 Examples of the monovalent organic group containing an H—Si bond and not containing a carbon-carbon unsaturated bond include a group represented by H—Si (Me) 2 —O— (where Me represents a methyl group). And a group represented by H—Si (Me) 2 OSi (Me) 2 O—, and the like.
上記H−Si結合を含有し炭素−炭素不飽和結合を含有しない1価の有機基を導入するには、例えば、トリクロロシランを用いてシルセスキオキサンを製造する方法、R4N+(Rは1価の有機基)を対カチオンとして有する籠型構造のシリケートに対してジメチルシリルクロリド(HSi(Me)2Cl)等を脱塩反応させることにより導入する方法等を挙げることができる。 In order to introduce the monovalent organic group containing the H-Si bond and not containing the carbon-carbon unsaturated bond, for example, a method of producing silsesquioxane using trichlorosilane, R4N + (R is 1 And a method of introducing dimethylsilyl chloride (HSi (Me) 2Cl) or the like by desalting a silicate having a valent organic group) as a counter cation.
本発明における上記シルセスキオキサン(B)においては、上記一般式(II)中、X2は、H−Si結合及び炭素−炭素不飽和結合を含有しない1価の有機基である。X2が複数ある場合は、それぞれ、同一でも異なっていてもよい。ただし、X2は水素原子ではない。 In the silsesquioxane (B) in the present invention, in the general formula (II), X2 is a monovalent organic group not containing an H-Si bond and a carbon-carbon unsaturated bond. When there are a plurality of X2, they may be the same or different. However, X2 is not a hydrogen atom.
上記X2におけるH−Si結合及び炭素−炭素不飽和結合を含有しない1価の有機基としては、X1について例示した1価の有機基を挙げることができる。また、例えば、ヘキシル、フェネチル、ドデシル、(Me)3−Si−O−Si(Me)2−O−Si(Me)2−CH2−CH2−で表される基等であってもよい。 Examples of the monovalent organic group not containing the H—Si bond and the carbon-carbon unsaturated bond in X2 include the monovalent organic groups exemplified for X1. Further, for example, hexyl, phenethyl, dodecyl, a group represented by (Me) 3-Si-O-Si (Me) 2-O-Si (Me) 2-CH2-CH2-, and the like may be used.
上記官能基を含有しない1価の有機基を導入するには、例えば、シルセスキオキサンのSi原子に結合する水素原子に対して、不飽和結合含有炭化水素を反応させる等の方法をとることができる。 In order to introduce a monovalent organic group that does not contain the above functional group, for example, a method such as reacting an unsaturated bond-containing hydrocarbon with a hydrogen atom bonded to a Si atom of silsesquioxane is employed. Can do.
本発明における上記シルセスキオキサン(B)においては、上記一般式(II)中、aは、6〜14の偶数である。nはaより小さい正の整数である。a及びnについては、上記シルセスキオキサン(A)に関する上述の説明が該当する。 In the said silsesquioxane (B) in this invention, a is an even number of 6-14 in the said general formula (II). n is a positive integer smaller than a. About a and n, the above-mentioned description regarding the said silsesquioxane (A) corresponds.
また、上記シルセスキオキサン(B)は、上述の条件を満たし、かつ、液状である必要があるが、これに関しても、上記シルセスキオキサン(A)に関する上述の説明が該当する。 In addition, the silsesquioxane (B) needs to satisfy the above-described conditions and be in a liquid state, and the above-described explanation regarding the silsesquioxane (A) also applies to this.
上記シルセスキオキサン(B)の具体例としては、例えば、R2がH−Si(Me)2−基、X2がヘプタメチルトリシロキシ基であり、aが8、nが3〜5のもの;R2がH−Si(Me)2−基、X2がフェネチル基であり、aが8、nが3〜5のもの、等が挙げられる。 Specific examples of the silsesquioxane (B) include those in which R2 is an H-Si (Me) 2- group, X2 is a heptamethyltrisiloxy group, a is 8, and n is 3-5; R2 is a H-Si (Me) 2- group, X2 is a phenethyl group, a is 8, n is 3-5, and the like.
本発明においては、上記シルセスキオキサン(B)としては、上述のものの1種又は2種以上、例えば、aの数が異なるもの同士、aの数が同一でもnの数が異なるもの同士、官能基を含有しない基の種類が異なるもの同士、を併用することができる。好ましくは、aの数が同じ化合物同士である。 In the present invention, as the silsesquioxane (B), one or more of the above-mentioned ones, for example, those having different numbers of a, those having the same number of a but different numbers of n, Different types of groups that do not contain a functional group can be used in combination. Preferably, the number of a is the same compound.
本発明においては、上記シルセスキオキサン(A)とシルセスキオキサン(B)との組み合わせとしては、両方ともに、aが8、10又は12である構造式を有するものが好ましく、aが8である6面体型構造式を有するものであることがより好ましい。また、両方ともにaが8であり、かつ、nが3〜5であることがさらに好ましい。 In the present invention, the combination of the silsesquioxane (A) and the silsesquioxane (B) preferably has a structural formula in which a is 8, 10 or 12, and a is 8 It is more preferable to have a hexahedral structural formula. Further, in both cases, it is more preferable that a is 8 and n is 3 to 5.
本発明の封止樹脂組成物は上記シルセスキオキサン(A)とシルセスキオキサン(B)とを、炭素−炭素不飽和結合の1モルに対してH−Si結合のモル数が0.8〜1.3の割合で配合することが好ましく、0.90〜0.99がより好ましい。 In the encapsulating resin composition of the present invention, the silsesquioxane (A) and the silsesquioxane (B) have a number of moles of H-Si bonds of 0.1 mole per mole of carbon-carbon unsaturated bonds. It is preferable to mix | blend in the ratio of 8-1.3, and 0.90-0.99 are more preferable.
本発明の封止樹脂組成物において、上記シルセスキオキサン(A)と上記シルセスキオキサン(B)との組合せは、ヒドロシリル化反応により架橋物を形成して硬化することができるので、架橋剤を使用する必要は特にない。この硬化は、自己触媒的に進行する場合は、特に触媒を加えなくても反応が進行する。この場合は貯蔵安定性の観点から低温保管が好ましい。一方、架橋反応を促進するために触媒を使用することができる。このような触媒としては、例えば、白金系触媒(例えば、塩化白金酸六水和物(H2PtCl6・6H2O)、ジビニルテトラメチルジシロキサン・Pt錯体等。)等を使用することができる。 In the encapsulating resin composition of the present invention, the combination of the silsesquioxane (A) and the silsesquioxane (B) can be cured by forming a crosslinked product by a hydrosilylation reaction. There is no particular need to use the agent. When this curing proceeds in an autocatalytic manner, the reaction proceeds without adding a catalyst. In this case, low temperature storage is preferred from the viewpoint of storage stability. On the other hand, a catalyst can be used to accelerate the crosslinking reaction. As such a catalyst, for example, a platinum-based catalyst (for example, chloroplatinic acid hexahydrate (H2PtCl6 · 6H2O), divinyltetramethyldisiloxane · Pt complex, etc.) can be used.
上記触媒の配合量は、上記シルセスキオキサン(A)とシルセスキオキサン(B)との合計100重量部に対して、0.0001〜0.05重量部が好ましく、0.001〜0.001重量部がより好ましい。 The blending amount of the catalyst is preferably 0.0001 to 0.05 parts by weight with respect to a total of 100 parts by weight of the silsesquioxane (A) and silsesquioxane (B), and 0.001 to 0. 0.001 part by weight is more preferred.
本発明の樹脂組成物はまた、樹脂成分として上記シルセスキオキサン(A)とシルセスキオキサン(B)との組合せ以外に、上記シルセスキオキサン(A)のみ、又は、上記シルセスキオキサン(B)のみであってもよい。この場合には、ヒドロシリル化反応により架橋することができる架橋剤を配合することが好ましい。 In addition to the combination of the silsesquioxane (A) and the silsesquioxane (B) as the resin component, the resin composition of the present invention may contain only the silsesquioxane (A) or the silsesquioxane. Only Sun (B) may be used. In this case, it is preferable to add a crosslinking agent capable of crosslinking by a hydrosilylation reaction.
例えば、上記シルセスキオキサン(A)と組み合わせる架橋剤としては、例えば、複数のH−Si結合を有する化合物、例えば、下記式で表されるジメチルポリシロキサン等を挙げることができる。ただし、式中、nは0以上の整数、mは2以上の整数であり、n+mは2以上100以下である。 For example, as a crosslinking agent combined with the silsesquioxane (A), for example, a compound having a plurality of H—Si bonds, for example, dimethylpolysiloxane represented by the following formula can be exemplified. In the formula, n is an integer of 0 or more, m is an integer of 2 or more, and n + m is 2 or more and 100 or less.
また、上記シルセスキオキサン(B)と組み合わせる架橋剤としては、例えば、複数の炭素−炭素不飽和結合を有する化合物、例えば、1,4−ジエチニルベンゼン、B−トリエチニル−N−トリメチルボラジン、トリアリルイソシアヌレート、トリアリルシアヌレート、トリメタアリルイソシアヌレート、下記式で表されるビニル基を有するジメチルポリシロキサン等を挙げることができる。ただし、式中、nは0以上の整数、mは2以上の整数であり、n+mは2以上100以下である。 Moreover, as a crosslinking agent combined with the said silsesquioxane (B), for example, a compound having a plurality of carbon-carbon unsaturated bonds, for example, 1,4-diethynylbenzene, B-triethynyl-N-trimethylborazine, Examples include triallyl isocyanurate, triallyl cyanurate, trimethallyl isocyanurate, and dimethylpolysiloxane having a vinyl group represented by the following formula. In the formula, n is an integer of 0 or more, m is an integer of 2 or more, and n + m is 2 or more and 100 or less.
上記架橋剤の配合量は、使用する化合物によって異なるが、例えば、上記式で表される化合物の場合を例にとれば、上記シルセスキオキサン(A)又はシルセスキオキサン(B)に対して、1〜80モル%が好ましく、2〜60モル%がより好ましい。 The amount of the crosslinking agent varies depending on the compound used. For example, in the case of the compound represented by the above formula, the silsesquioxane (A) or the silsesquioxane (B) is used. 1 to 80 mol% is preferable, and 2 to 60 mol% is more preferable.
また、触媒を使用してもよく、この触媒としては、上述のものを使用することができる。その使用量も上述の記載に準じて使用することができる。 Moreover, you may use a catalyst and can use the above-mentioned as this catalyst. The amount used can also be used according to the above description.
本発明の封止樹脂組成物には、本発明の目的を阻害しない範囲で、上記シルセスキオキサン(A)及び上記シルセスキオキサン(B)以外のシルセスキオキサン(例えば、ラダー型構造のもの、ランダム型構造のもの)を併用(例えば、0.1〜5モル%程度)することを排除するものではない。 The sealing resin composition of the present invention includes a silsesquioxane (for example, a ladder structure) other than the silsesquioxane (A) and the silsesquioxane (B) as long as the object of the present invention is not impaired. It is not excluded to use (for example, about 0.1 to 5 mol%) in combination.
本発明の封止樹脂組成物には、本発明の目的を阻害しない範囲で、その他の添加剤を使用することができる。このような添加剤としては、シランカップリング剤、ヒンダードアミン系光安定化剤、ヒンダードフェノール系酸化防止剤等が挙げられる。シランカップリングとしては、例えば、γ−グリシドキシプロピルトリメトキシシラン、γ−グリシドキシプロピルトリエトキシシラン、β−(3,4−エポキシシクロヘキシル)エチルトリメトキシシラン、β−(3,4−エポキシシクロヘキシル)エチルトリエトキシシラン、ビルニトリメトキシシラン、ビルニトリエトキシシラン等が挙げられる。ヒンダードアミン系光安定化剤としては、例えば、TINUVIN(登録商標)770、TINUVIN(登録商標)622LD(いずれもチバスペシャルティーケミカルズ社製)、アデカスタブ(登録商標)LA−57(旭電化工業社製)等が挙げられる。ヒンダードフェノール系酸化防止剤としては、例えば、IRGANOX(登録商標)1010(チバスペシャルテーケミカルズ社製)、ノクラックNS−30(商品名)(大内新興化学工業社製)、トミノックスTT(商品名)(吉豊ファインケミカル社製)等が挙げられる。
ただし、溶剤は使用しないことが好ましい。
In the sealing resin composition of the present invention, other additives can be used as long as the object of the present invention is not impaired. Examples of such additives include silane coupling agents, hindered amine light stabilizers, hindered phenol antioxidants, and the like. Examples of the silane coupling include γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyltriethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, β- (3,4- (Epoxycyclohexyl) ethyltriethoxysilane, bilnitrimethoxysilane, bilnitriethoxysilane and the like. Examples of the hindered amine light stabilizer include TINUVIN (registered trademark) 770, TINUVIN (registered trademark) 622LD (both manufactured by Ciba Specialty Chemicals), and Adekastab (registered trademark) LA-57 (manufactured by Asahi Denka Kogyo Co., Ltd.). Etc. Examples of the hindered phenol antioxidant include IRGANOX (registered trademark) 1010 (manufactured by Ciba Special Te Chemicals), NOCRACK NS-30 (trade name) (manufactured by Ouchi Shinsei Chemical Industry Co., Ltd.), Tominox TT (commodity Name) (manufactured by Yoshitoyo Fine Chemical Co., Ltd.).
However, it is preferable not to use a solvent.
上記シランカップリング剤の配合量は、組成物中、0.1〜5phrが好ましく、より好ましくは0.5〜2phrである。
上記ヒンダードアミン系光安定化剤の配合量は、組成物中、0.01〜0.5phrが好ましく、より好ましくは0.1〜0.3phrである。
上記ヒンダードフェノール系酸化防止剤の配合量は、組成物中、0.01〜0.5phrが好ましく、より好ましくは0.1〜0.3phrである。
The amount of the silane coupling agent is preferably 0.1 to 5 phr, more preferably 0.5 to 2 phr in the composition.
The blending amount of the hindered amine light stabilizer is preferably 0.01 to 0.5 phr, more preferably 0.1 to 0.3 phr in the composition.
The blending amount of the hindered phenolic antioxidant is preferably 0.01 to 0.5 phr, more preferably 0.1 to 0.3 phr in the composition.
本発明の封止樹脂組成物は、上記シルセスキオキサン(A)及び/又は上記シルセスキオキサン(B)をヒドロシリル化反応により硬化することができるので着色の原因となる硬化促進剤を使用する必要がない。このため、加熱による着色の原因を効果的に排除することができ、光素子の製造工程や使用中の熱曝露による熱着色を殆ど生じることがなく、封止樹脂として好適に使用することができる。 The sealing resin composition of the present invention uses a curing accelerator that causes coloration because the silsesquioxane (A) and / or the silsesquioxane (B) can be cured by a hydrosilylation reaction. There is no need to do. For this reason, the cause of coloring due to heating can be effectively eliminated, and there is almost no thermal coloring due to heat exposure during the manufacturing process or use of the optical element, and it can be suitably used as a sealing resin. .
本発明の封止樹脂組成物を適用し得る光素子としては、例えば、発光素子、受光素子、複合光素子、光集積回路等があり、具体的には、例えば、LED、LD等が挙げられる。LED等の発光素子は、一般に、LEDチップ、リードフレーム、金線及び封止樹脂から構成される。例えば、近紫外LEDの構造は、一般に、金属ステムの上に電極配線サブマウントが設置され、その上にLEDチップがマウントされる。このサブマウント上のチップを本発明の封止樹脂組成物で封止することにより、近紫外LED素子が形成される。また、白色発光LEDとするためにLEDチップ上に蛍光体層が配置されていてもよい。この蛍光体層の形成を本発明の封止樹脂組成物を使用して行うことができる。一般には、この上にさらに封止材が適用されて白色発光LEDが形成される。同様にして、本発明の封止樹脂組成物を使用して高輝度青色発光LEDを形成することができる。本発明の素子は、上述の例示の態様が示すように、本発明の封止樹脂組成物が使用されてなる光素子である。 Examples of the optical element to which the sealing resin composition of the present invention can be applied include a light emitting element, a light receiving element, a composite optical element, an optical integrated circuit, and the like, and specifically, for example, an LED, an LD, and the like. . A light emitting element such as an LED is generally composed of an LED chip, a lead frame, a gold wire, and a sealing resin. For example, in the structure of a near-ultraviolet LED, an electrode wiring submount is generally installed on a metal stem, and an LED chip is mounted thereon. A near-ultraviolet LED element is formed by sealing the chip on the submount with the sealing resin composition of the present invention. Moreover, in order to set it as white light emitting LED, the fluorescent substance layer may be arrange | positioned on the LED chip. This phosphor layer can be formed using the sealing resin composition of the present invention. In general, a sealing material is further applied thereon to form a white light emitting LED. Similarly, high-intensity blue light-emitting LEDs can be formed using the sealing resin composition of the present invention. The element of the present invention is an optical element in which the sealing resin composition of the present invention is used, as the above-described exemplary embodiment shows.
以下、合成例、実施例により本発明をさらに具体的に説明するが、以下の記載は専ら説明のためであって、本発明はこれらに限定されるものではない。 Hereinafter, the present invention will be described more specifically with reference to synthesis examples and examples. However, the following description is exclusively for the purpose of explanation, and the present invention is not limited thereto.
合成例1
200mlのナスフラスコに50%水酸化コリン水溶液10mlとトリエトキシシラン10mlとを入れ室温で3時間撹拌して反応させ、コリンシリケートを得た。全量を10mlのメタノールに溶解させ、ビニルジメチルクロロシラン21.64gとn−ヘキサン19.5mlとの混合物に、内温を20℃に保ちながらゆっくり滴下した。その後、分液ロートに移し、n−ヘキサン相を回収し、溶媒を留去後、アセトニトリルで洗浄して、ビニルジメチルシロキシ基を8個のケイ素原子に1個ずつ有する籠状シルセスキオキサンT8の3.0gを得た(これをSQ−Vとする)。このものの想定される化学構造を下記に示す。
Synthesis example 1
A 200 ml eggplant flask was charged with 10 ml of a 50% aqueous choline hydroxide solution and 10 ml of triethoxysilane and stirred at room temperature for 3 hours to obtain a choline silicate. The whole amount was dissolved in 10 ml of methanol, and slowly dropped into a mixture of 21.64 g of vinyldimethylchlorosilane and 19.5 ml of n-hexane while maintaining the internal temperature at 20 ° C. Thereafter, the mixture was transferred to a separatory funnel, the n-hexane phase was recovered, the solvent was distilled off, and the residue was washed with acetonitrile, so that a caged silsesquioxane T8 having one vinyldimethylsiloxy group per eight silicon atoms. Of 3.0 g was obtained (this is referred to as SQ-V). The assumed chemical structure of this product is shown below.
合成例2
200mlのナスフラスコに50%水酸化コリン水溶液10mlとトリエトキシシラン10mlとを入れ室温で3時間撹拌して反応させ、コリンシリケートを得た。全量を10mlのメタノールに溶解させ、ジメチルクロロシラン16.92gとn−ヘキサン19.5mlとの混合物に、内温を20℃に保ちながらゆっくり滴下した。その後、分液ロートに移し、n−ヘキサン相を回収し、溶媒を留去後、アセトニトリルで洗浄して、ジメチルシロキシ基を8個のケイ素原子に1個ずつ有する籠状シルセスキオキサンT8の4.5gを得た(これをSQ−Hとする)。このものの想定される化学構造を下記に示す。
Synthesis example 2
A 200 ml eggplant flask was charged with 10 ml of a 50% aqueous choline hydroxide solution and 10 ml of triethoxysilane and stirred at room temperature for 3 hours to obtain a choline silicate. The whole amount was dissolved in 10 ml of methanol, and slowly dropped into a mixture of 16.92 g of dimethylchlorosilane and 19.5 ml of n-hexane while maintaining the internal temperature at 20 ° C. Thereafter, the mixture was transferred to a separatory funnel, and the n-hexane phase was recovered. After the solvent was distilled off, the residue was washed with acetonitrile, and the cage-like silsesquioxane T8 having one dimethylsiloxy group per eight silicon atoms was obtained. 4.5 g was obtained (this is referred to as SQ-H). The assumed chemical structure of this product is shown below.
合成例3
200mlのナスフラスコにSQ−V6.13g(5mmol)、n−ヘキサン76mlを仕込み、完全に溶解させ、ヘプタメチルトリシロキサン3.34g(15mmol)及び白金触媒SIP6831.2の17.2μlを添加し室温で2時間反応させた。その後、活性炭1gを添加して1時間撹拌した後ろ過し、ろ液の溶媒を留去して目的の液状シルセスキオキサン誘導体SQ−1(ビニル当量379g/eq)を得た。このものの想定される化学構造の一例を下記に示す。
Synthesis example 3
A 200 ml eggplant flask was charged with 6.13 g (5 mmol) of SQ-V and 76 ml of n-hexane and dissolved completely, and 3.34 g (15 mmol) of heptamethyltrisiloxane and 17.2 μl of platinum catalyst SIP6831.2 were added to room temperature. For 2 hours. Thereafter, 1 g of activated carbon was added and stirred for 1 hour, followed by filtration. The solvent of the filtrate was distilled off to obtain the desired liquid silsesquioxane derivative SQ-1 (vinyl equivalent 379 g / eq). An example of the assumed chemical structure of this is shown below.
合成例4
200mlのナスフラスコにSQ−H5.09g(5mmol)、n−ヘキサン76mlを仕込み、完全に溶解させ、1−ヘキセン2.10g(25mmol)及び白金触媒SIP6831.2の17.2μlを添加し室温で2時間反応させた。その後、活性炭1gを添加して1時間撹拌した後ろ過し、ろ液の溶媒を留去して目的の液状シルセスキオキサン誘導体SQ−2(Si−H当量480g/eq)を得た。このものの想定される化学構造の一例を下記に示す。
Synthesis example 4
A 200 ml eggplant flask was charged with 5.09 g (5 mmol) of SQ-H and 76 ml of n-hexane and dissolved completely, and 2.10 g (25 mmol) of 1-hexene and 17.2 μl of platinum catalyst SIP6831.2 were added at room temperature. The reaction was performed for 2 hours. Thereafter, 1 g of activated carbon was added and stirred for 1 hour, followed by filtration. The solvent of the filtrate was distilled off to obtain a desired liquid silsesquioxane derivative SQ-2 (Si-H equivalent 480 g / eq). An example of the assumed chemical structure of this is shown below.
合成例5
200mlのナスフラスコにSQ−H5.09g(5mmol)、n−ヘキサン76mlを仕込み、完全に溶解させ、ビニルヘプタメチルトリシロキサン4.97g(20mmol)及び白金触媒SIP6831.2の17.2μlを添加し室温で2時間反応させた。その後、活性炭1gを添加して1時間撹拌した後ろ過し、ろ液の溶媒を留去して目的の液状シルセスキオキサン誘導体SQ−3(Si−H当量503g/eq)を得た。このものの想定される化学構造の一例を下記に示す。
Synthesis example 5
A 200 ml eggplant flask was charged with 5.09 g (5 mmol) of SQ-H and 76 ml of n-hexane, dissolved completely, and 4.97 g (20 mmol) of vinylheptamethyltrisiloxane and 17.2 μl of platinum catalyst SIP6831.2 were added. The reaction was allowed to proceed for 2 hours at room temperature. Thereafter, 1 g of activated carbon was added and stirred for 1 hour, followed by filtration. The solvent of the filtrate was distilled off to obtain a desired liquid silsesquioxane derivative SQ-3 (Si-H equivalent 503 g / eq). An example of the assumed chemical structure of this is shown below.
合成例6
撹拌機及び温度計を設置した反応容器に、イソプロパノール150g、水酸化テトラメチルアンモニウムの10%水溶液5.4g(水270mmol、水酸化テトラメチルアンモニウム5.93mmol)、水12gを仕込んだ後、γ−グリシドキシプロピルトリメトキシシラン42.5g(180mmol)を徐々に加え、室温で20時間撹拌下に反応させた。その後、トルエン200gを加え、減圧してイソプロパノールを除去し、蒸留水で水相が中性になるまで洗浄した後、トルエンを減圧留去して目的のエポキシ基含有シルセスキオキサン誘導体SQ−4(エポキシ当量175g/eq)を得た。このものの想定される化学構造を下記に示す。
Synthesis Example 6
A reaction vessel equipped with a stirrer and a thermometer was charged with 150 g of isopropanol, 5.4 g of a 10% aqueous solution of tetramethylammonium hydroxide (270 mmol of water, 5.93 mmol of tetramethylammonium hydroxide), and 12 g of water. 42.5 g (180 mmol) of glycidoxypropyltrimethoxysilane was gradually added, and the mixture was reacted at room temperature with stirring for 20 hours. Thereafter, 200 g of toluene was added, and the pressure was reduced to remove isopropanol. After washing with distilled water until the aqueous phase became neutral, toluene was distilled off under reduced pressure to obtain the desired epoxy group-containing silsesquioxane derivative SQ-4. (Epoxy equivalent 175 g / eq) was obtained. The assumed chemical structure of this product is shown below.
実施例1〜2、比較例1
各実施例の樹脂組成物及び比較例の樹脂組成物を用いて試験片を作成し、以下の方法で、性能を評価した。結果を表1に示した。なお、表1中、略号の意味は以下のとおりである。
MH−700G:メチルヘキサヒドロ無水フタル酸−ヘキサヒドロ無水フタル酸(70:30混合物、酸無水物当:168g/eq)(新日本理化社製)
TPP−PB:テトラメチルホスホニウム・ブロミド(北興化学社製)
SIP6831.2:ジビニルテトラメチルジシロキサン・白金錯体の2.3%キシレン溶液(Gelest社製)
Examples 1-2, Comparative Example 1
A test piece was prepared using the resin composition of each example and the resin composition of the comparative example, and the performance was evaluated by the following method. The results are shown in Table 1. In Table 1, the meanings of the abbreviations are as follows.
MH-700G: methylhexahydrophthalic anhydride-hexahydrophthalic anhydride (70:30 mixture, acid anhydride equivalent: 168 g / eq) (manufactured by Shin Nippon Chemical Co., Ltd.)
TPP-PB: Tetramethylphosphonium bromide (Hokuko Chemical Co., Ltd.)
SIP6831.2: 2.3% xylene solution of divinyltetramethyldisiloxane / platinum complex (manufactured by Gelest)
評価方法
試験片の作製:
40×25×1mmのシリコーン型内に表1に示す配合物を流し込み、実施例1および実施例2の配合については120℃/2時間、比較例の配合については120℃/10時間加熱することにより硬化させて透光率測定用試験片を得た。
初期透光率(%):
紫外可視分光計UV−2450(島津製作所社製)を用いて、350nmでの透光率を測定した。
UV暴露後の透過率(%):
前記透光率測定用試験片を、メタリングウエザーメーターM6T(スガ試験機社製)を用いて、100時間暴露(83℃、相対湿度20%、放射照度1.24kW/m2)した後に前記方法で透光率を測定した。
熱暴露後の透過率(%):
前記透光率測定用試験片を、150℃のオーブン中で100時間加熱した後に前記方法で透光率を測定した。
Evaluation method Preparation of test piece:
The composition shown in Table 1 is poured into a 40 × 25 × 1 mm silicone mold, and the composition of Example 1 and Example 2 is heated at 120 ° C./2 hours, and the composition of the comparative example is heated at 120 ° C./10 hours. To obtain a test piece for measuring transmissivity.
Initial light transmittance (%):
The transmissivity at 350 nm was measured using an ultraviolet-visible spectrometer UV-2450 (manufactured by Shimadzu Corporation).
Transmittance after UV exposure (%):
The above-mentioned method after exposing the test piece for measuring transmissivity for 100 hours (83 ° C., relative humidity 20%, irradiance 1.24 kW / m 2) using a metering weather meter M6T (manufactured by Suga Test Instruments Co., Ltd.) The light transmittance was measured.
Permeability after heat exposure (%):
The test piece for light transmittance measurement was heated in an oven at 150 ° C. for 100 hours, and then the light transmittance was measured by the above method.
実施例の結果から、本発明におけるシルセスキオキサン誘導体を樹脂成分とし、封止樹脂組成物をヒドロシリル化反応により架橋させた実施例1、2は、熱暴露後の透過率が非常に高く、耐熱着色性において、本発明の構成を持たないシルセスキオキサン樹脂を樹脂成分とする比較例1に比べて大幅に改善されていた。一方、エポキシ硬化系を使用した比較例1は、熱曝露により熱着色を引き起し、透過率が大幅に低下した。また、UV曝露においても、実施例1及び2は、比較例1と比べて、初期透過率からの低下量はわずかであり、また、初期透過率自体も比較例1と比べて高く、透明性、耐UV性に優れていることが判った。 From the results of Examples, Examples 1 and 2 in which the silsesquioxane derivative in the present invention was used as a resin component and the encapsulating resin composition was crosslinked by a hydrosilylation reaction had very high transmittance after heat exposure, The heat-resistant coloring property was greatly improved as compared with Comparative Example 1 in which a silsesquioxane resin having no configuration of the present invention was used as a resin component. On the other hand, Comparative Example 1 using an epoxy curing system caused thermal coloring due to heat exposure, and the transmittance was greatly reduced. Also, in UV exposure, Examples 1 and 2 have a slight decrease from the initial transmittance as compared with Comparative Example 1, and the initial transmittance itself is higher than that of Comparative Example 1 and is transparent. It was found to be excellent in UV resistance.
本発明の封止樹脂組成物は、耐熱着色性に極めて優れており、光素子の製造工程や使用中における熱曝露による熱着色を殆ど生じることがなく、光素子封止材として極めて好適であり、例えば、今後さらなる高輝度化が進むと予想されるLEDの封止材として有用である。
The encapsulating resin composition of the present invention is extremely excellent in heat resistance colorability, hardly causes thermal coloring due to heat exposure during the manufacturing process or use of the optical element, and is extremely suitable as an optical element sealing material. For example, it is useful as a sealing material for LEDs that are expected to further increase in brightness in the future.
Claims (7)
(R1−SiO3/2)a−n(X1−SiO3/2)n (I)
(式中、R1は、脂肪族炭素−炭素不飽和結合を含有する炭素数2〜12(ただし、脂肪族炭素−炭素不飽和結合中の炭素を含む。)の炭化水素基、又は、脂肪族炭素−炭素不飽和結合を含有しH−Si結合を含有しないシリルオキシ基である。R1が複数ある場合は、それぞれ、同一でも異なっていてもよい。X1は、H−Si結合及び脂肪族炭素−炭素不飽和結合を含有しない1価の有機基である。ただし、X1は水素原子ではない。X1が複数ある場合は、それぞれ、同一でも異なっていてもよい。aは、6〜14の偶数である。nはaより小さい正の整数である。)で表される脂肪族炭素−炭素不飽和結合を含有しH−Si結合を含有しない籠型構造体の液状のシルセスキオキサン(A)、及び、下記一般式(II):
(R2−SiO3/2)a−n(X2−SiO3/2)n (II)
(式中、R2は、水素原子を表すか又はH−Si結合を含有し脂肪族炭素−炭素不飽和結合を含有しない1価の有機基を表す。R2が複数ある場合は、それぞれ、同一でも異なっていてもよい。X2は、H−Si結合及び脂肪族炭素−炭素不飽和結合を含有しない1価の有機基である。ただし、X2は水素原子ではない。X2が複数ある場合は、それぞれ、同一でも異なっていてもよい。aは、6〜14の偶数である。nはaより小さい正の整数である。)で表されるH−Si結合を含有し脂肪族炭素−炭素不飽和結合を含有しない籠型構造体の液状のシルセスキオキサン(B)からなる群から選択される少なくとも1種のシルセスキオキサンを樹脂成分として含有する光素子封止用樹脂組成物。 The following general formula (I):
(R1-SiO 3/2) a- n (X1-SiO 3/2) n (I)
(In the formula, R1 is a hydrocarbon group having 2 to 12 carbon atoms (including carbon in the aliphatic carbon-carbon unsaturated bond) containing an aliphatic carbon-carbon unsaturated bond, or aliphatic. A silyloxy group containing a carbon-carbon unsaturated bond and no H-Si bond, and when there are a plurality of R 1 s, they may be the same or different, and X 1 is an H-Si bond and an aliphatic carbon- It is a monovalent organic group containing no carbon unsaturated bond, provided that X1 is not a hydrogen atom, and when there are a plurality of X1, they may be the same or different, and a is an even number of 6 to 14. N is a positive integer smaller than a.) Liquid silsesquioxane (A) having a cage structure containing an aliphatic carbon-carbon unsaturated bond and no H-Si bond And the following general formula (II):
(R2-SiO3 / 2 ) a-n (X2-SiO3 / 2 ) n (II)
(In the formula, R2 represents a hydrogen atom or a monovalent organic group containing an H-Si bond and no aliphatic carbon-carbon unsaturated bond. X2 is a monovalent organic group that does not contain an H-Si bond and an aliphatic carbon-carbon unsaturated bond, provided that X2 is not a hydrogen atom. A may be the same or different, a is an even number from 6 to 14. n is a positive integer smaller than a and contains an H—Si bond and is aliphatic carbon-carbon unsaturated. A resin composition for encapsulating an optical element, comprising at least one silsesquioxane selected from the group consisting of a liquid silsesquioxane (B) having a saddle type structure containing no bond as a resin component.
An optical element sealed with the composition according to claim 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005219518A JP4826160B2 (en) | 2005-07-28 | 2005-07-28 | Optical element sealing resin composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005219518A JP4826160B2 (en) | 2005-07-28 | 2005-07-28 | Optical element sealing resin composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007031619A true JP2007031619A (en) | 2007-02-08 |
JP4826160B2 JP4826160B2 (en) | 2011-11-30 |
Family
ID=37791248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005219518A Expired - Fee Related JP4826160B2 (en) | 2005-07-28 | 2005-07-28 | Optical element sealing resin composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4826160B2 (en) |
Cited By (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007251123A (en) * | 2006-02-20 | 2007-09-27 | Matsushita Electric Works Ltd | Semiconductor optical device and transparent optical member |
JP2007246880A (en) * | 2006-02-20 | 2007-09-27 | Matsushita Electric Works Ltd | Semiconductor light device and transparent optical member |
JP2007251122A (en) * | 2006-02-20 | 2007-09-27 | Matsushita Electric Works Ltd | Semiconductor optical device and transparent optical member |
JP2007251121A (en) * | 2006-02-20 | 2007-09-27 | Matsushita Electric Works Ltd | Semiconductor optical device and transparent optical member |
WO2007119627A1 (en) * | 2006-04-10 | 2007-10-25 | Ube Industries, Ltd. | Curable composition, cured silsesquioxanes, and process for production of both |
WO2008010545A1 (en) * | 2006-07-21 | 2008-01-24 | Kaneka Corporation | Polysiloxane composition, molded body obtained from the same, and optodevice member |
WO2008065967A1 (en) * | 2006-11-27 | 2008-06-05 | Panasonic Electric Works Co., Ltd. | Semiconductor optical device and transparent optical member |
WO2008065787A1 (en) * | 2006-11-27 | 2008-06-05 | Panasonic Electric Works Co., Ltd. | Optical semiconductor device and transparent optical member |
WO2008065966A1 (en) * | 2006-11-27 | 2008-06-05 | Panasonic Electric Works Co., Ltd. | Semiconductor optical device and transparent optical member |
WO2008065786A1 (en) * | 2006-11-27 | 2008-06-05 | Panasonic Electric Works Co., Ltd. | Optical semiconductor device and transparent optical member |
WO2008069193A1 (en) * | 2006-12-04 | 2008-06-12 | Panasonic Corporation | Optical head, optical information recording and retrieval device, and optical information system device |
WO2008123252A1 (en) * | 2007-03-26 | 2008-10-16 | Nippon Steel Chemical Co., Ltd. | Lens |
WO2009025017A1 (en) * | 2007-08-17 | 2009-02-26 | Panasonic Electric Works Co., Ltd. | Semiconductor photodevice and transparent optical member |
JP2009079163A (en) * | 2007-09-27 | 2009-04-16 | Ube Ind Ltd | Curable composition, cured silsesquioxane, and method for producing cured silsesquioxane |
WO2010140635A1 (en) * | 2009-06-02 | 2010-12-09 | チッソ株式会社 | Organic silicon compound, thermosetting composition containing said organic silicon compound, and sealing material for optical semiconductor |
JP2011068753A (en) * | 2009-09-25 | 2011-04-07 | Kaneka Corp | Polyhedral structural polysiloxane-based modified body and composition |
JP2011084672A (en) * | 2009-10-16 | 2011-04-28 | Fujifilm Corp | Composition for optical material |
JP2011210677A (en) * | 2010-03-30 | 2011-10-20 | Fujifilm Corp | Organic electroluminescent device |
JP2011210678A (en) * | 2010-03-30 | 2011-10-20 | Fujifilm Corp | Organic electroluminescent device |
WO2011145638A1 (en) * | 2010-05-18 | 2011-11-24 | Jnc株式会社 | Novel organosilicon compound and thermosetting resin composition, cured resin, and semiconductor sealing material containing said organosilicon compound |
JP2012021157A (en) * | 2010-07-14 | 2012-02-02 | Cheil Industries Inc | Siloxane hybrid polymer, sealant formed from the siloxane hybrid polymer, and electronic device including the sealant |
WO2012060322A1 (en) | 2010-11-04 | 2012-05-10 | 株式会社ダイセル | Curable resin composition and cured article |
US20120112211A1 (en) * | 2010-11-05 | 2012-05-10 | Nitto Denko Corporation | Silicone resin, sealing material, and optical semiconductor device |
CN102827477A (en) * | 2011-06-16 | 2012-12-19 | 日东电工株式会社 | Silicone resin composition, encapsulating layer, reflector, and optical semiconductor device |
JP2013001815A (en) * | 2011-06-16 | 2013-01-07 | Nitto Denko Corp | Silicone resin composition, encapsulating layer, reflector and optical semiconductor device |
JP2013001814A (en) * | 2011-06-16 | 2013-01-07 | Nitto Denko Corp | Silicone resin composition, encapsulating layer, reflector and optical semiconductor device |
JP2013001813A (en) * | 2011-06-16 | 2013-01-07 | Nitto Denko Corp | Silicone resin composition, encapsulating layer, reflector and optical semiconductor device |
WO2013061823A1 (en) * | 2011-10-25 | 2013-05-02 | セントラル硝子株式会社 | Siloxane-based composition and cured product thereof, and use therefor |
JP2013079337A (en) * | 2011-10-04 | 2013-05-02 | Kaneka Corp | Polyhedron-structured modified polysiloxane, composition containing the same, and cured material obtained by curing the composition |
WO2013094625A1 (en) | 2011-12-22 | 2013-06-27 | 株式会社ダイセル | Curable resin composition and curable product thereof |
JP2013234333A (en) * | 2007-04-17 | 2013-11-21 | Kaneka Corp | Polyhedral polysiloxane modified product and composition using the modified product |
WO2013176238A1 (en) | 2012-05-25 | 2013-11-28 | 株式会社ダイセル | Curable resin composition, and cured product, sealing agent, and optical semiconductor device using same |
WO2014061517A1 (en) * | 2012-10-18 | 2014-04-24 | セントラル硝子株式会社 | Curable composition containing silica particles, cured product thereof, and semiconductor sealing material using same |
WO2014065143A1 (en) * | 2012-10-22 | 2014-05-01 | Jnc株式会社 | Thermosetting resin composition |
JPWO2012090961A1 (en) * | 2010-12-28 | 2014-06-05 | コニカミノルタ株式会社 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE MANUFACTURING METHOD, AND COATING LIQUID |
WO2014109349A1 (en) | 2013-01-09 | 2014-07-17 | 株式会社ダイセル | Curable resin composition, and cured product of same |
WO2014125964A1 (en) | 2013-02-14 | 2014-08-21 | 株式会社ダイセル | Curable resin composition, cured product, sealing member semiconductor device |
KR20150135531A (en) | 2013-08-06 | 2015-12-02 | 주식회사 다이셀 | Curing resin composition and semiconductor device employing same |
KR20170016432A (en) | 2014-06-06 | 2017-02-13 | 주식회사 다이셀 | Curable resin composition, cured product, sealing material, and semiconductor device |
US9688851B2 (en) | 2010-05-28 | 2017-06-27 | Kaneka Corporation | Polysiloxane composition, hardened material and optical device |
US9698320B2 (en) | 2010-09-22 | 2017-07-04 | Kaneka Corporation | Modified product of polyhedral structure polysiloxane, polyhedral structure polysiloxane composition, cured product, and optical semiconductor device |
KR20180100561A (en) | 2016-01-08 | 2018-09-11 | 주식회사 다이셀 | Curable silicone resin composition and cured product thereof, and optical semiconductor device |
JP2019085532A (en) * | 2017-11-10 | 2019-06-06 | 信越化学工業株式会社 | Addition-curable liquid silicone rubber composition |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110746783A (en) * | 2019-10-25 | 2020-02-04 | 湖南国芯半导体科技有限公司 | High-temperature-resistant addition type organic silicon gel and preparation method thereof |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000154252A (en) * | 1998-11-18 | 2000-06-06 | Agency Of Ind Science & Technol | Novel silsequioxane-containing polymer and its production |
JP2003137944A (en) * | 2001-11-05 | 2003-05-14 | Nippon Steel Chem Co Ltd | Silicone resin composition and silicone resin molded article |
JP2004123936A (en) * | 2002-10-03 | 2004-04-22 | Nippon Steel Chem Co Ltd | Silicone resin composition and silicone resin molded form |
JP2004186168A (en) * | 2002-11-29 | 2004-07-02 | Shin Etsu Chem Co Ltd | Silicone resin composition for light emitting diode element |
WO2004081085A1 (en) * | 2003-03-11 | 2004-09-23 | Chisso Petrochemial Corporation | Polymer obtained with silsesquioxane derivative |
JP2004359933A (en) * | 2003-05-14 | 2004-12-24 | Nagase Chemtex Corp | Sealing material for optical element |
JP2005089601A (en) * | 2003-09-17 | 2005-04-07 | Stanley Electric Co Ltd | Thermosetting resin composition, light emitting diode with its light emitting element encapsulated by the same, and color conversion type light emitting diode encapsulated by the same |
JP2005290352A (en) * | 2004-03-12 | 2005-10-20 | Asahi Kasei Corp | Compound having basket-shaped silsesquioxane structure |
JP2006022207A (en) * | 2004-07-08 | 2006-01-26 | Chisso Corp | Silicon compound |
JP2006299150A (en) * | 2005-04-22 | 2006-11-02 | Asahi Kasei Corp | Composition for sealant and optical device |
JP2008523165A (en) * | 2004-12-07 | 2008-07-03 | 松下電工株式会社 | UV transmitting polyhedral silsesquioxane polymer |
-
2005
- 2005-07-28 JP JP2005219518A patent/JP4826160B2/en not_active Expired - Fee Related
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000154252A (en) * | 1998-11-18 | 2000-06-06 | Agency Of Ind Science & Technol | Novel silsequioxane-containing polymer and its production |
JP2003137944A (en) * | 2001-11-05 | 2003-05-14 | Nippon Steel Chem Co Ltd | Silicone resin composition and silicone resin molded article |
JP2004123936A (en) * | 2002-10-03 | 2004-04-22 | Nippon Steel Chem Co Ltd | Silicone resin composition and silicone resin molded form |
JP2004186168A (en) * | 2002-11-29 | 2004-07-02 | Shin Etsu Chem Co Ltd | Silicone resin composition for light emitting diode element |
WO2004081085A1 (en) * | 2003-03-11 | 2004-09-23 | Chisso Petrochemial Corporation | Polymer obtained with silsesquioxane derivative |
JP2006070049A (en) * | 2003-03-11 | 2006-03-16 | Chisso Corp | Polymer obtained by using silsesquioxane derivative |
JP2004359933A (en) * | 2003-05-14 | 2004-12-24 | Nagase Chemtex Corp | Sealing material for optical element |
JP2005089601A (en) * | 2003-09-17 | 2005-04-07 | Stanley Electric Co Ltd | Thermosetting resin composition, light emitting diode with its light emitting element encapsulated by the same, and color conversion type light emitting diode encapsulated by the same |
JP2005290352A (en) * | 2004-03-12 | 2005-10-20 | Asahi Kasei Corp | Compound having basket-shaped silsesquioxane structure |
JP2006022207A (en) * | 2004-07-08 | 2006-01-26 | Chisso Corp | Silicon compound |
JP2008523165A (en) * | 2004-12-07 | 2008-07-03 | 松下電工株式会社 | UV transmitting polyhedral silsesquioxane polymer |
JP2006299150A (en) * | 2005-04-22 | 2006-11-02 | Asahi Kasei Corp | Composition for sealant and optical device |
Cited By (92)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007251123A (en) * | 2006-02-20 | 2007-09-27 | Matsushita Electric Works Ltd | Semiconductor optical device and transparent optical member |
JP2007246880A (en) * | 2006-02-20 | 2007-09-27 | Matsushita Electric Works Ltd | Semiconductor light device and transparent optical member |
JP2007251122A (en) * | 2006-02-20 | 2007-09-27 | Matsushita Electric Works Ltd | Semiconductor optical device and transparent optical member |
JP2007251121A (en) * | 2006-02-20 | 2007-09-27 | Matsushita Electric Works Ltd | Semiconductor optical device and transparent optical member |
WO2007119627A1 (en) * | 2006-04-10 | 2007-10-25 | Ube Industries, Ltd. | Curable composition, cured silsesquioxanes, and process for production of both |
JPWO2007119627A1 (en) * | 2006-04-10 | 2009-08-27 | 宇部興産株式会社 | Curable composition, cured product of silsesquioxane, and production method thereof |
JPWO2008010545A1 (en) * | 2006-07-21 | 2009-12-17 | 株式会社カネカ | Polysiloxane composition, molded article obtained from the same, and optical device member |
JP2014210922A (en) * | 2006-07-21 | 2014-11-13 | 株式会社カネカ | Polysiloxane composition, compact obtained therefrom and opto device member |
JP5666775B2 (en) * | 2006-07-21 | 2015-02-12 | 株式会社カネカ | Polysiloxane composition, molded article obtained from the same, and optical device member |
WO2008010545A1 (en) * | 2006-07-21 | 2008-01-24 | Kaneka Corporation | Polysiloxane composition, molded body obtained from the same, and optodevice member |
US8299198B2 (en) | 2006-07-21 | 2012-10-30 | Kaneka Corporation | Polysiloxane composition, molded body obtained from the same, and optodevice member |
WO2008065966A1 (en) * | 2006-11-27 | 2008-06-05 | Panasonic Electric Works Co., Ltd. | Semiconductor optical device and transparent optical member |
WO2008065786A1 (en) * | 2006-11-27 | 2008-06-05 | Panasonic Electric Works Co., Ltd. | Optical semiconductor device and transparent optical member |
JP5210881B2 (en) * | 2006-11-27 | 2013-06-12 | パナソニック株式会社 | Semiconductor optical device and transparent optical member |
JP5210880B2 (en) * | 2006-11-27 | 2013-06-12 | パナソニック株式会社 | Semiconductor optical device and transparent optical member |
WO2008065967A1 (en) * | 2006-11-27 | 2008-06-05 | Panasonic Electric Works Co., Ltd. | Semiconductor optical device and transparent optical member |
WO2008065787A1 (en) * | 2006-11-27 | 2008-06-05 | Panasonic Electric Works Co., Ltd. | Optical semiconductor device and transparent optical member |
JPWO2008065966A1 (en) * | 2006-11-27 | 2010-03-04 | パナソニック電工株式会社 | Semiconductor optical device and transparent optical member |
JPWO2008065967A1 (en) * | 2006-11-27 | 2010-03-04 | パナソニック電工株式会社 | Semiconductor optical device and transparent optical member |
US8208359B2 (en) | 2006-12-04 | 2012-06-26 | Panasonic Corporation | Optical head, optical information recording and reproducing device, and optical information system device |
JP5154440B2 (en) * | 2006-12-04 | 2013-02-27 | パナソニック株式会社 | Optical head, optical information recording / reproducing apparatus, and optical information system apparatus |
JPWO2008069193A1 (en) * | 2006-12-04 | 2010-03-18 | パナソニック株式会社 | Optical head, optical information recording / reproducing apparatus, and optical information system apparatus |
WO2008069193A1 (en) * | 2006-12-04 | 2008-06-12 | Panasonic Corporation | Optical head, optical information recording and retrieval device, and optical information system device |
WO2008123252A1 (en) * | 2007-03-26 | 2008-10-16 | Nippon Steel Chemical Co., Ltd. | Lens |
CN101646959B (en) * | 2007-03-26 | 2012-06-27 | 新日铁化学株式会社 | Lens |
JPWO2008123252A1 (en) * | 2007-03-26 | 2010-07-15 | 新日鐵化学株式会社 | lens |
KR101433815B1 (en) | 2007-03-26 | 2014-08-27 | 신닛테츠 수미킨 가가쿠 가부시키가이샤 | Lens |
JP5073738B2 (en) * | 2007-03-26 | 2012-11-14 | 新日鐵化学株式会社 | lens |
JP2013234333A (en) * | 2007-04-17 | 2013-11-21 | Kaneka Corp | Polyhedral polysiloxane modified product and composition using the modified product |
US9416231B2 (en) | 2007-04-17 | 2016-08-16 | Kaneka Corporation | Polyhedral polysiloxane modified product and composition using the modified product |
JP2015071796A (en) * | 2007-04-17 | 2015-04-16 | 株式会社カネカ | Polyhedron structure polysiloxane modification body and composition using the modification body |
US9422405B2 (en) | 2007-04-17 | 2016-08-23 | Kaneka Corporation | Polyhedral polysiloxane modified product and composition using the modified product |
JP2015129288A (en) * | 2007-04-17 | 2015-07-16 | 株式会社カネカ | Polyhedron structure polysiloxane modification body and composition using the modification body |
US9035009B2 (en) | 2007-04-17 | 2015-05-19 | Kaneka Corporation | Polyhedral polysiloxane modified product and composition using the modified product |
WO2009025017A1 (en) * | 2007-08-17 | 2009-02-26 | Panasonic Electric Works Co., Ltd. | Semiconductor photodevice and transparent optical member |
JP2009079163A (en) * | 2007-09-27 | 2009-04-16 | Ube Ind Ltd | Curable composition, cured silsesquioxane, and method for producing cured silsesquioxane |
JP2010280766A (en) * | 2009-06-02 | 2010-12-16 | Chisso Corp | Organosilicon compound, thermocurable composition containing the organosilicon compound, and sealing material for optical semiconductor |
TWI470006B (en) * | 2009-06-02 | 2015-01-21 | Jnc Corp | Organosilicon compound, thermosetting composition containing said organosilicon compound and sealing material for optical semiconductor |
WO2010140635A1 (en) * | 2009-06-02 | 2010-12-09 | チッソ株式会社 | Organic silicon compound, thermosetting composition containing said organic silicon compound, and sealing material for optical semiconductor |
JP2011068753A (en) * | 2009-09-25 | 2011-04-07 | Kaneka Corp | Polyhedral structural polysiloxane-based modified body and composition |
JP2011084672A (en) * | 2009-10-16 | 2011-04-28 | Fujifilm Corp | Composition for optical material |
US8506853B2 (en) | 2009-10-16 | 2013-08-13 | Fujifilm Corporation | Composition for optical materials |
JP2011210677A (en) * | 2010-03-30 | 2011-10-20 | Fujifilm Corp | Organic electroluminescent device |
JP2011210678A (en) * | 2010-03-30 | 2011-10-20 | Fujifilm Corp | Organic electroluminescent device |
JPWO2011145638A1 (en) * | 2010-05-18 | 2013-07-22 | Jnc株式会社 | Novel organosilicon compound, thermosetting resin composition containing the organosilicon compound, cured resin, and sealing material for optical semiconductor |
JP5704168B2 (en) * | 2010-05-18 | 2015-04-22 | Jnc株式会社 | Novel organosilicon compound, thermosetting resin composition containing the organosilicon compound, cured resin, and sealing material for optical semiconductor |
WO2011145638A1 (en) * | 2010-05-18 | 2011-11-24 | Jnc株式会社 | Novel organosilicon compound and thermosetting resin composition, cured resin, and semiconductor sealing material containing said organosilicon compound |
US9822248B2 (en) | 2010-05-28 | 2017-11-21 | Kaneka Corporation | Polysiloxane composition, hardened material and optical device |
US9688851B2 (en) | 2010-05-28 | 2017-06-27 | Kaneka Corporation | Polysiloxane composition, hardened material and optical device |
JP2012021157A (en) * | 2010-07-14 | 2012-02-02 | Cheil Industries Inc | Siloxane hybrid polymer, sealant formed from the siloxane hybrid polymer, and electronic device including the sealant |
US9698320B2 (en) | 2010-09-22 | 2017-07-04 | Kaneka Corporation | Modified product of polyhedral structure polysiloxane, polyhedral structure polysiloxane composition, cured product, and optical semiconductor device |
US8871890B2 (en) | 2010-11-04 | 2014-10-28 | Daicel Corporation | Curable resin composition and cured article |
WO2012060322A1 (en) | 2010-11-04 | 2012-05-10 | 株式会社ダイセル | Curable resin composition and cured article |
US8772430B2 (en) | 2010-11-05 | 2014-07-08 | Nitto Denko Corporation | Silicone resin, sealing material, and optical semiconductor device |
US20120112211A1 (en) * | 2010-11-05 | 2012-05-10 | Nitto Denko Corporation | Silicone resin, sealing material, and optical semiconductor device |
JP2012102167A (en) * | 2010-11-05 | 2012-05-31 | Nitto Denko Corp | Silicone resin, sealing material, and optical semiconductor device |
CN102532552A (en) * | 2010-11-05 | 2012-07-04 | 日东电工株式会社 | Silicone resin, sealing material, and optical semiconductor device |
JPWO2012090961A1 (en) * | 2010-12-28 | 2014-06-05 | コニカミノルタ株式会社 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE MANUFACTURING METHOD, AND COATING LIQUID |
JP2013001815A (en) * | 2011-06-16 | 2013-01-07 | Nitto Denko Corp | Silicone resin composition, encapsulating layer, reflector and optical semiconductor device |
JP2013001814A (en) * | 2011-06-16 | 2013-01-07 | Nitto Denko Corp | Silicone resin composition, encapsulating layer, reflector and optical semiconductor device |
CN102827477A (en) * | 2011-06-16 | 2012-12-19 | 日东电工株式会社 | Silicone resin composition, encapsulating layer, reflector, and optical semiconductor device |
JP2013001813A (en) * | 2011-06-16 | 2013-01-07 | Nitto Denko Corp | Silicone resin composition, encapsulating layer, reflector and optical semiconductor device |
JP2013079337A (en) * | 2011-10-04 | 2013-05-02 | Kaneka Corp | Polyhedron-structured modified polysiloxane, composition containing the same, and cured material obtained by curing the composition |
TWI460184B (en) * | 2011-10-25 | 2014-11-11 | Central Glass Co Ltd | Siloxanes and their hardened products and their use |
WO2013061823A1 (en) * | 2011-10-25 | 2013-05-02 | セントラル硝子株式会社 | Siloxane-based composition and cured product thereof, and use therefor |
KR20140096311A (en) * | 2011-10-25 | 2014-08-05 | 샌트랄 글래스 컴퍼니 리미티드 | Siloxane-based composition and cured product thereof, and use therefor |
JP2013108063A (en) * | 2011-10-25 | 2013-06-06 | Central Glass Co Ltd | Siloxane-based composition and cured product thereof, and use thereof |
US9080017B2 (en) | 2011-10-25 | 2015-07-14 | Central Glass Company, Limited | Siloxane-based composition and cured product thereof, and use therefor |
KR101598543B1 (en) | 2011-10-25 | 2016-02-29 | 샌트랄 글래스 컴퍼니 리미티드 | Siloxane-based composition and cured product thereof, and use therefor |
US9181397B2 (en) | 2011-12-22 | 2015-11-10 | Daicel Corporation | Curable resin composition and cured product thereof |
WO2013094625A1 (en) | 2011-12-22 | 2013-06-27 | 株式会社ダイセル | Curable resin composition and curable product thereof |
US9447277B2 (en) | 2012-05-25 | 2016-09-20 | Daicel Corporation | Curable resin composition and cured product thereof, encapsulating agent, and optical semiconductor device |
WO2013176238A1 (en) | 2012-05-25 | 2013-11-28 | 株式会社ダイセル | Curable resin composition, and cured product, sealing agent, and optical semiconductor device using same |
WO2014061517A1 (en) * | 2012-10-18 | 2014-04-24 | セントラル硝子株式会社 | Curable composition containing silica particles, cured product thereof, and semiconductor sealing material using same |
JPWO2014065143A1 (en) * | 2012-10-22 | 2016-09-08 | Jnc株式会社 | Thermosetting resin composition |
WO2014065143A1 (en) * | 2012-10-22 | 2014-05-01 | Jnc株式会社 | Thermosetting resin composition |
US9512273B2 (en) | 2012-10-22 | 2016-12-06 | Jnc Corporation | Thermosetting resin composition |
US9646904B2 (en) | 2013-01-09 | 2017-05-09 | Daicel Corporation | Curable resin composition, and cured product of same |
WO2014109349A1 (en) | 2013-01-09 | 2014-07-17 | 株式会社ダイセル | Curable resin composition, and cured product of same |
KR20150065822A (en) | 2013-01-09 | 2015-06-15 | 주식회사 다이셀 | Curable resin composition, and cured product of same |
EP2985317A1 (en) | 2013-02-14 | 2016-02-17 | Daicel Corporation | Curable resin composition and cured product thereof, encapsulant, and semiconductor device |
US9481791B2 (en) | 2013-02-14 | 2016-11-01 | Daicel Corporation | Curable resin composition and cured product thereof, encapsulant, and semiconductor device |
WO2014125964A1 (en) | 2013-02-14 | 2014-08-21 | 株式会社ダイセル | Curable resin composition, cured product, sealing member semiconductor device |
US9644098B2 (en) | 2013-02-14 | 2017-05-09 | Daicel Corporation | Curable resin composition and cured product thereof, encapsulant, and semiconductor device |
KR20150107873A (en) | 2013-02-14 | 2015-09-23 | 주식회사 다이셀 | Curable resin composition and cured product thereof, encapsulant, and semiconductor device |
KR20150135531A (en) | 2013-08-06 | 2015-12-02 | 주식회사 다이셀 | Curing resin composition and semiconductor device employing same |
KR20170016432A (en) | 2014-06-06 | 2017-02-13 | 주식회사 다이셀 | Curable resin composition, cured product, sealing material, and semiconductor device |
KR20180100561A (en) | 2016-01-08 | 2018-09-11 | 주식회사 다이셀 | Curable silicone resin composition and cured product thereof, and optical semiconductor device |
JP2019085532A (en) * | 2017-11-10 | 2019-06-06 | 信越化学工業株式会社 | Addition-curable liquid silicone rubber composition |
JP2022082661A (en) * | 2017-11-10 | 2022-06-02 | 信越化学工業株式会社 | Addition-curable liquid silicone rubber composition |
JP7176180B2 (en) | 2017-11-10 | 2022-11-22 | 信越化学工業株式会社 | Addition-curable liquid silicone rubber composition |
JP7371717B2 (en) | 2017-11-10 | 2023-10-31 | 信越化学工業株式会社 | Addition-curable liquid silicone rubber composition |
Also Published As
Publication number | Publication date |
---|---|
JP4826160B2 (en) | 2011-11-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4826160B2 (en) | Optical element sealing resin composition | |
KR101836962B1 (en) | New organosilicon compound, thermosetting resin composition containing the organosilicon compound, hardening resin and encapsulation material for optical semiconductor | |
JP4734832B2 (en) | Encapsulant for optical element | |
KR101758384B1 (en) | Low gas permeable silicone resin composition and optical semiconductor device | |
JP4636242B2 (en) | Optical semiconductor element sealing material and optical semiconductor element | |
JP2008111117A (en) | Heat stable aryl polysiloxane composition | |
EP2159242A1 (en) | Sealing agent for optical semiconductor element, and optical semiconductor element | |
JP5838053B2 (en) | Siloxane hybrid polymer, sealing material formed from the siloxane hybrid polymer, and electronic device including the sealing material | |
KR20120083224A (en) | Silicone resin composition and optical semiconductor device using said composition | |
CN103509347A (en) | Silicone resin composition, semi-cured material sheet, producing method of silicone cured material, light emitting diode device, and producing method thereof | |
JP5877081B2 (en) | Modified polyhedral polysiloxane, composition containing the modified body, sealing agent using the composition, and optical device | |
JP2008274185A (en) | Curable organic silicon composition and cured material from the same | |
JP2010280766A (en) | Organosilicon compound, thermocurable composition containing the organosilicon compound, and sealing material for optical semiconductor | |
CN104755569B (en) | Curable organosilicon composition, its cured product and optical semiconductor device | |
CN102816432B (en) | Resin composition and transparent encapsulant formed using the same, and electronic device including encapsulant | |
JP2006124710A (en) | Silicone encapsulant for light emitting diode | |
KR20200019827A (en) | Curable composition, cured product of said composition, and semiconductor device using said cured product | |
JP2010111811A (en) | Curable composition for semiconductor sealing | |
KR101909914B1 (en) | Curable composition, semiconductor device, and ester-bond-containing organic silicon compound | |
WO2015163355A1 (en) | Curable resin composition, cured product thereof, glycoluril derivative, and method for producing same | |
WO2014002919A1 (en) | Coating agent, electrical-electronic equipment, and method for protecting metal parts of electrical-electronic equipment | |
JP6452545B2 (en) | Curable silicone resin composition and cured product thereof | |
WO2018088316A1 (en) | Curable silicone composition and optical semiconductor device using same | |
WO2014052937A1 (en) | Polycyclic polysiloxane composition and led containing same | |
JP5943104B2 (en) | Curable composition, cured film, polysiloxane, and optical semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080723 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20101117 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101125 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110121 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110803 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110829 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140922 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |