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JP2007005474A - Power semiconductor module and its manufacturing method - Google Patents

Power semiconductor module and its manufacturing method Download PDF

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Publication number
JP2007005474A
JP2007005474A JP2005182242A JP2005182242A JP2007005474A JP 2007005474 A JP2007005474 A JP 2007005474A JP 2005182242 A JP2005182242 A JP 2005182242A JP 2005182242 A JP2005182242 A JP 2005182242A JP 2007005474 A JP2007005474 A JP 2007005474A
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conductive member
power semiconductor
semiconductor module
bonding
shaped conductive
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JP4577509B2 (en
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Kenji Nakao
健司 中尾
Takayoshi Kuriyama
貴好 栗山
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Toyota Motor Corp
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Toyota Motor Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To make small the inclination of a degradation curve for the bonded surface caused by a cold heat load, while attaining large current capacity for the electric wiring of a power semiconductor module. <P>SOLUTION: The current capacity is increased by securing the cross-sectional area required for wiring for the electrical connection between a semiconductor device 14 and a bus bar 16, in such a way that a belt-like conductive material 18 of a sectional square shape, whose thickness is 0.15 mm-0.6 mm and whose width is 0.84 mm or larger is carried out by ultrasonic bonding to the semiconductor device 14 arranged at a substrate 12. Since the shape of the conductive material is belt-like, increase in the flexural rigidity to the bending direction of a loop 18a can be prevented, while securing the required cross-sectional area. Thus, the heat stress, caused by the thermal expansion difference between the belt-like conductive material 18 and the electrode of the semiconductor device 14, can be absorbed fully by the flexibility of the loop 18a, and thus can prevent generation of wiring exfoliation in a bonded part 18b. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、パワー半導体モジュールに関するものである。   The present invention relates to a power semiconductor module.

ＩＧＢＴモジュール等のパワー半導体モジュールは、大電流を通電する必要があることから、基板に配置された半導体素子と、バスバー或いは基板との間を電気接続する配線には、可能な限り断面積の大きなアルミワイヤを用いることが望まれる。しかしながら、アルミワイヤの直径がφ６００μｍ以上になると、曲げ剛性の増大によりループの形成が困難となることが、本発明者らによって確認されている。又、これより細いφ５００μｍ〜φ４００μｍのアルミワイヤであっても、アルミワイヤと半導体素子の電極との熱膨張差に起因して発生する熱応力をループ自身の撓み性で吸収しきれず、その熱応力がアルミワイヤと半導体素子の電極との接合部に加わることとなる（例えば、特許文献１参照。）。したがって、冷熱負荷による接合面積の劣化曲線の傾きが、ワイヤボンドと比較して遥かに大きくなり、配線剥離を誘発し易いという問題がある。   Since power semiconductor modules such as IGBT modules need to pass a large current, the wiring that electrically connects a semiconductor element arranged on a substrate and a bus bar or a substrate has as large a cross-sectional area as possible. It is desirable to use an aluminum wire. However, the present inventors have confirmed that when the diameter of the aluminum wire is φ600 μm or more, it becomes difficult to form a loop due to an increase in bending rigidity. Moreover, even if the aluminum wire is smaller than φ500μm to φ400μm, the thermal stress generated due to the difference in thermal expansion between the aluminum wire and the electrode of the semiconductor element cannot be absorbed by the flexibility of the loop itself. Will be added to the joint between the aluminum wire and the electrode of the semiconductor element (see, for example, Patent Document 1). Therefore, there is a problem that the slope of the deterioration curve of the bonding area due to the cold load is much larger than that of the wire bond, and it is easy to induce wiring peeling.

特開２００３−３０３８４５号公報JP 2003-303845 A

一方、アルミワイヤの断面積を増大させることなく使用する本数を増やすことにより、半導体素子とバスバー或いは基板との間を電気接続する配線の電流容量を増大させることも可能ではあるが、製造コストの増大を回避することが困難となるといった問題が生じる。
本発明は上記課題に鑑みてなされたものであり、その目的とするところは、パワー半導体モジュールの電気配線の大電流容量化を図りつつ、冷熱負荷による接合面積の劣化曲線の傾きを小さくすることを可能とし、パワー半導体モジュールの性能及び信頼性の向上を図ることにある。 On the other hand, it is possible to increase the current capacity of the wiring that electrically connects the semiconductor element and the bus bar or the substrate by increasing the number of aluminum wires used without increasing the cross-sectional area of the aluminum wire. There arises a problem that it is difficult to avoid the increase.
The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to reduce the slope of the deterioration curve of the junction area due to the thermal load while increasing the current capacity of the electric wiring of the power semiconductor module. This is to improve the performance and reliability of the power semiconductor module.

上記課題を解決するための、本発明に係るパワー半導体モジュールは、基板に配置された半導体素子に対し、厚さが０．１５ｍｍ〜０．６ｍｍ、幅が０．８４ｍｍ以上である断面角形の帯状導電部材が超音波接合され、かつ、該帯状導電部材の少なくとも接合部の厚さが１２０μｍ以下となっていることを特徴とするものである。
本発明によれば、基板に配置された半導体素子に対し、厚さが０．１５ｍｍ〜０．６ｍｍ、幅が０．８４ｍｍ以上である断面角形の帯状導電部材が超音波接合されることで、半導体素子と、バスバー或いは基板との間を電気接続する配線に必要な断面積を確保し、導電部材の電流容量を増大させることができる。しかも、導電部材の形状が帯状であることにより、必要な断面積を確保しつつループの曲げ方向に対する曲げ剛性の増大を防ぐことができる。又、帯状導電部材の少なくとも接合部の厚さが１２０μｍ以下となっていることにより、接合部において冷熱負荷により発生する熱応力が緩和され、接合部の剥離の発生を回避することができる。 In order to solve the above problems, a power semiconductor module according to the present invention has a rectangular cross-section with a thickness of 0.15 mm to 0.6 mm and a width of 0.84 mm or more with respect to a semiconductor element disposed on a substrate. The conductive member is ultrasonically bonded, and the thickness of at least the bonding portion of the strip-shaped conductive member is 120 μm or less.
According to the present invention, a band-shaped conductive member having a square cross section having a thickness of 0.15 mm to 0.6 mm and a width of 0.84 mm or more is ultrasonically bonded to the semiconductor element disposed on the substrate. A cross-sectional area required for wiring for electrically connecting the semiconductor element and the bus bar or the substrate can be secured, and the current capacity of the conductive member can be increased. Moreover, since the shape of the conductive member is a band shape, it is possible to prevent an increase in bending rigidity with respect to the bending direction of the loop while ensuring a necessary cross-sectional area. In addition, since the thickness of at least the joint portion of the strip-shaped conductive member is 120 μm or less, the thermal stress generated by the cold load at the joint portion is relieved, and the occurrence of peeling of the joint portion can be avoided.

又、上記課題を解決するための、本発明に係るパワー半導体モジュールは、基板に配置された半導体素子に対し、厚さが０．１５ｍｍ〜０．６ｍｍ、幅が０．８４ｍｍ以上である断面角形の帯状導電部材が超音波接合されていることを特徴とするものである。
本発明によれば、基板に配置された半導体素子に対し、厚さが０．１５ｍｍ〜０．６ｍｍ、幅が０．８４ｍｍ以上である断面角形の帯状導電部材が超音波接合されることで、半導体素子と、バスバー或いは基板との間を電気接続する配線に必要な断面積を確保し、導電部材の電流容量を増大させることができる。しかも、導電部材の形状が帯状であることにより、必要な断面積を確保しつつループの曲げ方向に対する曲げ剛性の増大を防ぐことができる。 In order to solve the above problems, a power semiconductor module according to the present invention has a square cross section having a thickness of 0.15 mm to 0.6 mm and a width of 0.84 mm or more with respect to a semiconductor element disposed on a substrate. This band-shaped conductive member is ultrasonically bonded.
According to the present invention, a band-shaped conductive member having a square cross section having a thickness of 0.15 mm to 0.6 mm and a width of 0.84 mm or more is ultrasonically bonded to the semiconductor element disposed on the substrate. A cross-sectional area required for wiring for electrically connecting the semiconductor element and the bus bar or the substrate can be secured, and the current capacity of the conductive member can be increased. Moreover, since the shape of the conductive member is a band shape, it is possible to prevent an increase in bending rigidity with respect to the bending direction of the loop while ensuring a necessary cross-sectional area.

又、上記課題を解決するための、本発明に係るパワー半導体モジュールは、基板に配置された半導体素子に対し、少なくとも接合部の厚さが１２０μｍ以下の帯状導電部材が超音波接合されていることを特徴とするものである。
本発明によれば、帯状導電部材の少なくとも接合部の厚さが１２０μｍ以下となっていることにより、接合部において冷熱負荷により発生する熱応力が緩和され、接合部の剥離の発生を回避することができる。 In addition, in the power semiconductor module according to the present invention for solving the above-described problems, at least a band-shaped conductive member having a junction thickness of 120 μm or less is ultrasonically bonded to a semiconductor element disposed on a substrate. It is characterized by.
According to the present invention, since the thickness of at least the joining portion of the belt-like conductive member is 120 μm or less, the thermal stress generated by the cold load at the joining portion is relieved, and the occurrence of peeling of the joining portion is avoided. Can do.

なお、前記接合部の超音波接合時の接合面積として０．８０ｍｍ2以上を確保することにより、接合部において冷熱負荷により発生する熱応力に対し、長時間にわたり耐え得る接合状態を確保することが可能となる。 In addition, by securing 0.80 mm 2 or more as a bonding area at the time of ultrasonic bonding of the bonded portion, it is possible to ensure a bonded state that can withstand a thermal stress generated by a cold load at the bonded portion for a long time. It becomes possible.

又、本発明において、前記接合部の結晶方位角差の平均値が０．６°以下となるように、超音波接合後に熱処理がなされていることとすれば、超音波接合時に接合部に生じる残留応力が緩和され、接合部において冷熱負荷により発生する熱応力に対し、長時間にわたり耐え得る接合状態を得ることが可能となる。
又、前記接合部の結晶方位角差の平均値が０．６°以下となるように、超音波接合後に所定時間放置されていることとすれば、超音波接合時に接合部に生じる残留応力が緩和され、接合部において冷熱負荷により発生する熱応力に対し、長時間にわたり耐え得る接合状態を得ることが可能となる。
さらに、前記帯状導電部材に、６．２５ｋｇｆ/ｍｍ2以下の引っ張り強度を有する材料が用られることで、超音波接合時に接合部に生じる残留応力が緩和され、接合部において冷熱負荷により発生する熱応力に対し、長時間にわたり耐え得る接合状態を得ることが可能となる。 Further, in the present invention, if the heat treatment is performed after the ultrasonic bonding so that the average value of the crystal orientation angle difference of the bonded portion is 0.6 ° or less, it occurs in the bonded portion during the ultrasonic bonding. Residual stress is relaxed, and it becomes possible to obtain a bonded state that can withstand a thermal stress generated by a cold load at the bonded portion over a long period of time.
Also, if the ultrasonic welding is allowed to stand for a predetermined time so that the average value of the crystal orientation angle difference of the joint is 0.6 ° or less, the residual stress generated in the joint during ultrasonic joining is It is possible to obtain a bonded state that is relaxed and can withstand a thermal stress generated by a cold load at the bonded portion over a long period of time.
Furthermore, since a material having a tensile strength of 6.25 kgf / mm 2 or less is used for the band-shaped conductive member, residual stress generated in the bonded portion during ultrasonic bonding is relieved, and heat generated by a cold load at the bonded portion. It becomes possible to obtain a bonded state that can withstand stress over a long period of time.

又、前記帯状導電部材の、前記接合部の近傍に位置するネック部に、くびれ部が形成されていることとすれば、帯状導電部材のループ部に生ずる熱伸縮を、ネック部の積極的な変形を促すことにより吸収し、接合部を剥離させる方向へと熱応力が作用することを回避することができる。
又、前記ネック部に６０°〜１２０°の角度が与えられていることとすれば、帯状導電部材のループ部に生ずる熱伸縮に伴う熱応力が、接合部に対する直角方向成分により多く配分され、接合部を剥離させる方向へと熱応力が作用することを回避することができる。 Further, if a constricted portion is formed in the neck portion of the belt-like conductive member located near the joint portion, the thermal expansion and contraction that occurs in the loop portion of the belt-like conductive member is prevented. It is possible to avoid the thermal stress acting in the direction of absorbing and promoting the deformation by promoting the deformation.
Further, if an angle of 60 ° to 120 ° is given to the neck portion, thermal stress accompanying thermal expansion and contraction generated in the loop portion of the strip-shaped conductive member is more distributed to the component perpendicular to the joint portion, It is possible to avoid the thermal stress from acting in the direction in which the joint is peeled off.

又、上記課題を解決するための、本発明に係るパワー半導体モジュールの製造方法は、基板に配置された半導体素子に対し、厚さが０．１５ｍｍ〜０．６ｍｍ、幅が０．８４ｍｍ以上である断面角形の帯状導電部材を超音波接合し、かつ、該帯状導電部材の少なくとも接合部の厚さが１２０μｍ以下とすることを特徴とするものである。
又、上記課題を解決するための、本発明に係るパワー半導体モジュールの製造方法は、基板に配置された半導体素子に対し、厚さが０．１５ｍｍ〜０．６ｍｍ、幅が０．８４ｍｍ以上である断面角形の帯状導電部材を超音波接合することを特徴とするものである。
又、上記課題を解決するための、本発明に係るパワー半導体モジュールの製造方法は、基板に配置された半導体素子に対し、少なくとも接合部の厚さが１２０μｍ以下の帯状導電部材を超音波接合することを特徴とするものである。 Moreover, the manufacturing method of the power semiconductor module which concerns on this invention for solving the said subject is 0.15 mm-0.6 mm in thickness with respect to the semiconductor element arrange | positioned at a board | substrate, and width is 0.84 mm or more. A band-shaped conductive member having a square cross section is ultrasonically bonded, and the thickness of at least the bonding portion of the band-shaped conductive member is 120 μm or less.
Moreover, the manufacturing method of the power semiconductor module which concerns on this invention for solving the said subject is 0.15 mm-0.6 mm in thickness with respect to the semiconductor element arrange | positioned at a board | substrate, and width is 0.84 mm or more. A band-shaped conductive member having a certain square cross section is ultrasonically bonded.
Moreover, the manufacturing method of the power semiconductor module which concerns on this invention for solving the said subject ultrasonically joins the strip | belt-shaped electrically-conductive member whose thickness of a junction part is 120 micrometers or less with respect to the semiconductor element arrange | positioned at the board | substrate. It is characterized by this.

さらに、前記接合部の超音波接合時の接合面積を０．８０ｍｍ2以上確保することが望ましい。
又、前記接合部の結晶方位角差の平均値が０．６°以下となるように、超音波接合後に熱処理を施すこととしても良い。
又、前記接合部の結晶方位角差の平均値が０．６°以下となるように、超音波接合後に所定時間放置することとしても良い。 Furthermore, it is desirable to secure a bonding area of 0.80 mm 2 or more during ultrasonic bonding of the bonded portion.
Further, heat treatment may be performed after ultrasonic bonding so that the average value of the crystal orientation angle difference of the bonded portion is 0.6 ° or less.
Further, it may be allowed to stand for a predetermined time after ultrasonic bonding so that the average value of the crystal orientation angle difference of the bonded portion is 0.6 ° or less.

又、前記帯状導電部材に、６．２５ｋｇｆ/ｍｍ2以下の引っ張り強度を有する材料を用いることが望ましい。
又、前記帯状導電部材の、前記接合部の近傍に位置するネック部に、くびれ部を形成することが望ましい。
さらに、前記ネック部に６０°〜１２０°の角度を与ることが望ましい。 Further, it is desirable to use a material having a tensile strength of 6.25 kgf / mm 2 or less for the strip-shaped conductive member.
Moreover, it is desirable to form a constricted part in the neck part located in the vicinity of the said junction part of the said strip | belt-shaped electrically-conductive member.
Furthermore, it is desirable to give the neck portion an angle of 60 ° to 120 °.

本発明はこのように構成したので、パワー半導体モジュールの電気配線の大電流容量化を可能とし、なおかつ、冷熱負荷による接合面積の劣化曲線の傾きを小さくて、パワー半導体モジュールの性能及び信頼性の向上を図ることが可能となる。   Since the present invention is configured as described above, it is possible to increase the current capacity of the electric wiring of the power semiconductor module, and to reduce the slope of the deterioration curve of the junction area due to the thermal load, thereby reducing the performance and reliability of the power semiconductor module. It is possible to improve.

以下、本発明の実施の形態を添付図面に基づいて説明する。なお、従来技術と同一部分、若しくは相当する部分については同一符号で示し、詳しい説明を省略する。
本発明の実施の形態に係るパワー半導体モジュール１０は、図１に示すように、基板１２に配置された半導体素子１４と、バスバー（或いは基板）１６との間を電気接続する配線に、帯状導電部材１８を用いている。帯状導電部材１８は、アルミ製であり、その断面は角形、六角、八角等の多角形ないし楕円形をなしている（本説明では、断面角形の帯状導電部材を中心に説明する）。又、帯状導電部材１８は６．２５ｋｇｆ/ｍｍ2以下の引っ張り強度を有する材料により構成されている。そして、帯状導電部材１８は半導体素子１４の電極に超音波接合されている。 Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In addition, the same part as a prior art, or a part corresponding to it is shown with the same code | symbol and detailed description is abbreviate | omitted.
As shown in FIG. 1, the power semiconductor module 10 according to the embodiment of the present invention has a band-like conductive structure for wiring that electrically connects a semiconductor element 14 disposed on a substrate 12 and a bus bar (or substrate) 16. The member 18 is used. The strip-shaped conductive member 18 is made of aluminum, and its cross section has a polygonal or elliptical shape such as a square, hexagon, or octagon (in this description, the strip-shaped conductive member having a square cross section will be mainly described). The band-shaped conductive member 18 is made of a material having a tensile strength of 6.25 kgf / mm 2 or less. The band-shaped conductive member 18 is ultrasonically bonded to the electrode of the semiconductor element 14.

帯状導電部材１８は、図２（ａ）、（ｂ）に示されるように、ループ部１８ａの先端が半導体素子１４に直接的に超音波接合される接合部１８ｂとなっており、接合部１８ｂの近傍には、接合部１８ｂとループ部１８ａとの境界部分として、折れ曲がった形状のネック部１８ｃが形成されている。以下の説明において、「接合部の厚さ」は図２（ｂ）に符号ｔで示す寸法を表し、「ネック部の角度」は図２（ｂ）に符号θで示す角度を表している。さらに、図３の上段には接合部１８ｂの平面図を、同図中段には接合部１８ｂの断面視図を、同図下段には接合部１８ｂの透過視図（超音波探傷により接合部のみ抽出して示している。）を夫々示している。そして、本説明において、接合部１８ｂの接合面積Ｓは、図３下段の寸法線Ｘ、Ｙで囲まれた部分に表れた接合部分の面積を意味するものである。   As shown in FIGS. 2A and 2B, the strip-shaped conductive member 18 is a joint 18b in which the tip of the loop portion 18a is directly ultrasonically joined to the semiconductor element 14, and the joint 18b. A bent neck portion 18c is formed as a boundary portion between the joint portion 18b and the loop portion 18a. In the following description, “joint thickness” represents the dimension indicated by the symbol t in FIG. 2B, and “neck angle” represents the angle indicated by the symbol θ in FIG. 2B. 3 is a plan view of the joint 18b in the upper part, a cross-sectional view of the joint 18b in the middle part of the figure, and a perspective view of the joint 18b in the lower part of the figure (only the joint by ultrasonic flaw detection). (Extracted and shown.) In the present description, the bonding area S of the bonding portion 18b means the area of the bonding portion that appears in the portion surrounded by the dimension lines X and Y in the lower part of FIG.

ところで、帯状導電部材１８は、厚さＴが０．６ｍｍ以下（本実施の形態では、下限値も定め、厚さＴを０．１５ｍｍ〜０．６ｍｍとしている。）、幅Ｗが０．８４ｍｍ以上に形成されている。実際には、Ｔ／Ｗ＝１／１０程度までの偏平度を得ることが可能である。又、接合部１８ｂの、超音波接合時の接合面積を０．８０ｍｍ2以上確保している。
一方、帯状導電部材１８の少なくとも接合部１８ｂの厚さｔは、１２０μｍ以下、好ましくは、図４（ａ）に示されるようにｔ＝１／２Ｔ程度とされている。この、接合部１８ｂの厚さｔは、図４（ｂ）に示されるように、ボンダツール２０による超音波接合作業時の、ボンド荷重Ｆによって調整されるものである。又、図４（ｂ）のようにボンダツール２０の先端部形状に凹凸を持たせた場合、接合部１８ｂは図３の上段にも示されるようにその凹凸形状が転写されたものとなるが、このとき最も薄い部分の厚さがｔであれば良い。 By the way, the strip-shaped conductive member 18 has a thickness T of 0.6 mm or less (in this embodiment, a lower limit is also set, and the thickness T is set to 0.15 mm to 0.6 mm), and a width W is 0.84 mm. It is formed as described above. Actually, it is possible to obtain flatness up to about T / W = 1/10. Further, the bonding area of the bonding portion 18b at the time of ultrasonic bonding is ensured to be 0.80 mm 2 or more.
On the other hand, the thickness t of at least the joint 18b of the strip-shaped conductive member 18 is 120 μm or less, and preferably t = 1 / 2T as shown in FIG. The thickness t of the joint portion 18b is adjusted by the bond load F during the ultrasonic joining operation by the bonder tool 20, as shown in FIG. Further, when the bonder tool 20 has an uneven shape as shown in FIG. 4B, the joint 18b has the uneven shape transferred as shown in the upper part of FIG. At this time, the thickness of the thinnest portion may be t.

又、帯状導電部材１８の接合部１８ｂを半導体素子１４の電極に超音波接合した後、ＥＢＳＰ（後方散乱電子解析パターン）による歪分布解析で算出される、接合部の結晶方位角差の平均値が０．６°以下となるように、超音波接合後に熱処理が行われる。この熱処理は、２５０℃以上の温度で１０分以上行われることが望ましい。
又、帯状導電部材１８の接合部１８ｂを半導体素子１４の電極に超音波接合した後、同結晶方位角差の平均値が０．６°以下となるように、超音波接合後に所定時間放置することとしても良い。この場合の放置時間は、概ね１週間〜１ヶ月程度であるが、放置によりかかるコストと、同結晶方位角差の平均値との兼ね合いで決定される。 In addition, the average value of the crystal orientation angle difference of the joint calculated by the strain distribution analysis by EBSP (Backscattered Electron Analysis Pattern) after ultrasonically joining the joint 18b of the strip-shaped conductive member 18 to the electrode of the semiconductor element 14 Heat treatment is performed after ultrasonic bonding so that the angle is 0.6 ° or less. This heat treatment is desirably performed at a temperature of 250 ° C. or more for 10 minutes or more.
Also, after ultrasonically bonding the joining portion 18b of the strip-like conductive member 18 to the electrode of the semiconductor element 14, it is allowed to stand for a predetermined time after the ultrasonic bonding so that the average value of the crystal azimuth difference is 0.6 ° or less. It's also good. In this case, the standing time is approximately one week to one month, but is determined by a balance between the cost required for the leaving and the average value of the difference in crystal orientation angle.

又、図５に示されるように、帯状導電部材１８のネック部１８ｃに、くびれ部１８ｄを形成することが望ましい。このくびれ部１８ｄは、図６に示すように、くびれ部１８ｄとなる凹部が、１箇所ないし複数箇所設けられた帯状導電部材を超音波接合することで、形成することが可能である。又、凹部を備えない帯状導電部材１８を超音波接合した後に、ネック部１８ｃをエッチングすることによって、くびれ部１８ｄを形成することも可能である。
さらに、図５のごとく帯状導電部材１８の厚さＴ（図２参照）を薄くすることによりくびれ部１８ｄを形成するのみならず、帯状導電部材１８の幅Ｗ（図３参照）を狭くすることにより、くびれ部を形成することとしても良く、厚さ及び幅の何れも減少させることによりくびれ部を形成しても良い。又、ネック部１８ｃにミシン目のような半切断線を形成したものも、くびれ部に含まれる。何れの場合も、帯状導電部材１８のネック部１８ｃに、ループ部１８ａよりも曲げ剛性を意図的に低下させる目的でくびれ部を形成する。 Further, as shown in FIG. 5, it is desirable to form a constricted portion 18 d at the neck portion 18 c of the belt-like conductive member 18. As shown in FIG. 6, the constricted portion 18d can be formed by ultrasonically bonding a band-shaped conductive member in which a concave portion to be the constricted portion 18d is provided at one or a plurality of locations. It is also possible to form the constricted portion 18d by etching the neck portion 18c after ultrasonically bonding the strip-shaped conductive member 18 having no recess.
Further, as shown in FIG. 5, not only the constricted portion 18d is formed by reducing the thickness T (see FIG. 2) of the strip-shaped conductive member 18, but also the width W (see FIG. 3) of the strip-shaped conductive member 18 is narrowed. Thus, the constricted portion may be formed, or the constricted portion may be formed by reducing both the thickness and the width. Further, the constricted portion includes a half cut line such as a perforation formed in the neck portion 18c. In any case, a constricted portion is formed in the neck portion 18c of the strip-shaped conductive member 18 for the purpose of intentionally lowering the bending rigidity than the loop portion 18a.

さらに、帯状導電部材１８のネック部１８ｃの角度θ（図２参照）として、６０°〜１２０°の角度を与えることが望ましい。図７（ａ）には、ネック部１８ｃに角度θ＝９０°を与えた場合が示されている。かかるネック部１８ｃの角度θは、ボンダーの作動パラメータ（ループトップ位置、打点間距離、ボンダツール軌跡）を調整することにより、半導体素子１４に帯状導電部材１８の接合部１８ｂを超音波接合する際に与えることが可能である。
又、図８に示されるように、半導体素子１４に突起１４ａを形成し、帯状導電部材１８の接合部１８ｂを半導体素子１４の電極に超音波接合する際に、ネック部１８ｃが突起１４ａに当接して強制的に曲げられるようにすることとしても、ネック部１８ｃに必要な角度θを与えることが可能である。後者の場合には、接合部１８ｂと突起１４ａとの距離、突起１４ａの突起の高さや形状によって、ネック部１８ｃの角度θを設定することが可能である。 Furthermore, it is desirable to give an angle of 60 ° to 120 ° as the angle θ (see FIG. 2) of the neck portion 18c of the strip-shaped conductive member 18. FIG. 7A shows a case where an angle θ = 90 ° is given to the neck portion 18c. The angle θ of the neck portion 18c is determined when the bonding portion 18b of the strip-shaped conductive member 18 is ultrasonically bonded to the semiconductor element 14 by adjusting the operating parameters of the bonder (loop top position, inter-spotting distance, bonder tool locus). It is possible to give
Further, as shown in FIG. 8, when the projection 14a is formed on the semiconductor element 14 and the joining portion 18b of the strip-like conductive member 18 is ultrasonically joined to the electrode of the semiconductor element 14, the neck portion 18c contacts the projection 14a. It is possible to give the necessary angle θ to the neck portion 18c even if it is forced to bend in contact. In the latter case, the angle θ of the neck portion 18c can be set according to the distance between the joint portion 18b and the protrusion 14a and the height and shape of the protrusion of the protrusion 14a.

上記構成を有する本発明の実施の形態によれば、次のような作用効果を得ることが可能である。まず、基板１２に配置された半導体素子１４に対し、厚さが０．１５ｍｍ〜０．６ｍｍ、幅が０．８４ｍｍ以上である断面角形の帯状導電部材１８が超音波接合されることで、半導体素子と、バスバー（或いは基板）１６との間を電気接続する配線に必要な断面積を確保し、電流容量を増大させることができる。なお、厚さが０．６ｍｍを越えると、接合部１８ｂの厚さｔを１２０μｍ以下とするために必要なボンド荷重がより大きくなり、帯状導電部材１８の接合対象である半導体素子１４を破壊してしまう虞がある。この点、厚さが０．６ｍｍ以下であれば、半導体素子１４に悪影響を与えるようなボンド荷重を与えることなく、接合部１８ｂの厚さｔを１２０μｍ以下とすることができる。
しかも、導電部材の形状は、断面が角形、六角、八角等の多角形ないし楕円形の帯状であることにより、必要な断面積を確保しつつループ部１８ａの曲げ方向に対する曲げ剛性の増大を防ぐことができる。よって、帯状導電部材１８と半導体素子１４の電極との熱膨張差に起因して発生する熱応力を、ループ部１８ａの撓み性で十分に吸収することが可能となり、熱応力が接合部１８ｂに加わることが無くなり、配線剥離の発生を防ぐことが可能となる。 According to the embodiment of the present invention having the above-described configuration, the following operational effects can be obtained. First, the semiconductor element 14 disposed on the substrate 12 is ultrasonically bonded with a band-shaped conductive member 18 having a square cross section having a thickness of 0.15 mm to 0.6 mm and a width of 0.84 mm or more. The cross-sectional area required for the wiring that electrically connects the element and the bus bar (or substrate) 16 can be secured, and the current capacity can be increased. If the thickness exceeds 0.6 mm, the bond load necessary to make the thickness t of the bonding portion 18b 120 μm or less becomes larger, and the semiconductor element 14 that is the bonding target of the strip-shaped conductive member 18 is destroyed. There is a risk that. In this respect, if the thickness is 0.6 mm or less, the thickness t of the bonding portion 18 b can be 120 μm or less without giving a bond load that adversely affects the semiconductor element 14.
In addition, the shape of the conductive member is a polygonal or elliptical band such as a square, hexagon, or octagon in cross section, thereby preventing an increase in bending rigidity in the bending direction of the loop portion 18a while ensuring a necessary cross-sectional area. be able to. Therefore, the thermal stress generated due to the difference in thermal expansion between the strip-shaped conductive member 18 and the electrode of the semiconductor element 14 can be sufficiently absorbed by the flexibility of the loop portion 18a, and the thermal stress is absorbed in the joint portion 18b. It is possible to prevent the occurrence of wiring peeling.

又、帯状導電部材１８の少なくとも接合部１８ｂの厚さｔが１２０μｍ以下となっていることにより、接合部１８ｂにおいて冷熱負荷により発生する熱応力が緩和され、接合部の剥離の発生を回避することができる。図９には、帯状導電部材１８の厚さＴ＝２００μｍであるとき、接合部１８ｂの厚さｔを様々に変化させることによる、冷熱サイクルＮと接合部１８ｂの接合面積Ｓとの関係が示されている。図９から明らかなように、１１９．６μｍ≦ｔ≦１７９．６μｍの範囲では、冷熱サイクルＮが４０００サイクルを越えると、接合部１８ｂの接合面積Ｓはほぼ０にまで縮小してしまうが、ｔ＝６９．７μｍの場合には、冷熱サイクルＮが４０００サイクルを越えても、接合面積Ｓは０．２ｍｍ2以上保持されていることがわかる。 Further, since the thickness t of at least the joint portion 18b of the strip-shaped conductive member 18 is 120 μm or less, the thermal stress generated by the cold load at the joint portion 18b is relieved, and the occurrence of peeling of the joint portion is avoided. Can do. FIG. 9 shows the relationship between the cooling cycle N and the bonding area S of the bonding portion 18b by variously changing the thickness t of the bonding portion 18b when the thickness T of the strip-shaped conductive member 18 is 200 μm. Has been. As is apparent from FIG. 9, in the range of 119.6 μm ≦ t ≦ 179.6 μm, when the cooling cycle N exceeds 4000 cycles, the bonding area S of the bonding portion 18b is reduced to almost zero. In the case of 69.7 μm, it can be seen that the bonding area S is maintained at 0.2 mm 2 or more even when the thermal cycle N exceeds 4000 cycles.

又、図１０には、厚さＴ＝２００μｍの帯状導電部材１８が、夫々、０回（Ｃｙ0）、１５００回（Ｃｙ1500）、３０００回（Ｃｙ3000）、４５００回（Ｃｙ4500）の冷熱サイクルＮを受けた際の、接合部１８ｂの厚さｔと接合部１８ｂの接合面積Ｓとの関係が示されている。図１０からは、冷熱サイクルＮを４５００回受けた場合であっても、接合部１８ｂの厚さｔ≦１２０μｍであれば、接合部１８ｂの接合面積Ｓは０とならないことが解る。又、ｔ＝１／２Ｔ、すなわちｔ＝１００μｍ程度であれば、冷熱サイクルＮを４５００回受けた場合であっても、接合部１８ｂには十分な接合面積が確保されていることが理解される。 In FIG. 10, the strip-shaped conductive member 18 having a thickness T = 200 μm is cooled by 0 times (Cy 0 ), 1500 times (Cy 1500 ), 3000 times (Cy 3000 ), and 4500 times (Cy 4500 ). The relationship between the thickness t of the joint 18b and the joint area S of the joint 18b when subjected to the cycle N is shown. From FIG. 10, it can be seen that even when the cooling cycle N is received 4500 times, the bonding area S of the bonding portion 18b does not become zero if the thickness t ≦ 120 μm of the bonding portion 18b. Further, if t = 1 / 2T, that is, t = about 100 μm, it is understood that a sufficient bonding area is secured in the bonding portion 18b even when the cooling cycle N is received 4500 times. .

又、図９からは、帯状導電部材１８の接合部１８ｂの、超音波接合時の接合面積として、Ｓ＝０．８０ｍｍ2以上を確保することにより、接合部において冷熱負荷により発生する熱応力に対し、比較的長時間（冷熱サイクルＮを３０００回以上）にわたり耐え得る接合状態を得ることができることが理解される。
なお、円筒形のアルミワイヤにボンド荷重を付与して超音波接合した場合、直径を様々に変化させても、超音波接合時の接合部の接合面積は、最大でも０．５０ｍｍ2程度しか確保することができない。すなわち、帯状導電部材１８の接合部１８ｂの接合面積Ｓ＝０．８０ｍｍ2以上は、帯状導電部材１８が接合前の状態から偏平形状をなしていることにより、容易に実現することが可能となる。しかも、超音波接合の際に、接合部１８ｂの接合面積を拡大するために、ボンダツールにより帯状導電部材１８に付与するボンド荷重Ｆを過大にする必要もなく、半導体素子１４に無理な荷重を付与することもない。 Further, from FIG. 9, by securing S = 0.80 mm 2 or more as the bonding area at the time of ultrasonic bonding of the bonding portion 18b of the belt-shaped conductive member 18, the thermal stress generated by the cold load at the bonding portion is reduced. On the other hand, it is understood that a bonded state that can withstand a relatively long time (cooling cycle N is 3000 times or more) can be obtained.
Note that when ultrasonic bonding is performed by applying a bond load to a cylindrical aluminum wire, the bonding area of the bonded portion during ultrasonic bonding is only secured at most 0.50 mm 2 even if the diameter is varied. Can not do it. That is, the joining area S = 0.80 mm 2 or more of the joining portion 18b of the strip-shaped conductive member 18 can be easily realized by forming the strip-shaped conductive member 18 in a flat shape from the state before joining. . Moreover, it is not necessary to excessively increase the bond load F applied to the band-shaped conductive member 18 by the bonder tool in order to increase the bonding area of the bonding portion 18b during ultrasonic bonding, and an excessive load is applied to the semiconductor element 14. It is not granted.

又、本発明の実施の形態において、帯状導電部材１８の接合部１８ｂの、結晶方位角差の平均値が０．６°以下となるように、超音波接合後に熱処理を行うことが望ましい。又、接合部１８ｂの結晶方位角差の平均値が０．６°以下となるように、超音波接合後に所定時間放置することとしても良い。図１１には、接合部１８ｂの結晶方位角差の平均値を０．６°にした場合の、冷熱サイクルＮと接合部１８ｂの接合面積Ｓとの関係が曲線Ａで、接合部１８ｂの結晶方位角差の平均値が、超音波接合直後の状態（未処理）にある場合の、同関係を曲線Ｂで示されている。図１１から明らかなように、接合部１８ｂの結晶方位角差の平均値が０．６°以下となるよう処理して後、パワー半導体モジュール１０を用いることで、超音波接合時に接合部に生じる残留応力が緩和され、接合部において冷熱負荷により発生する熱応力に対し、長時間にわたり耐え得る接合状態を得ることが可能となることが理解される。   In the embodiment of the present invention, it is desirable to perform heat treatment after the ultrasonic bonding so that the average value of the crystal orientation angle difference of the bonding portion 18b of the strip-shaped conductive member 18 is 0.6 ° or less. Moreover, it is good also as leaving for predetermined time after ultrasonic joining so that the average value of the crystal orientation angle difference of the junction part 18b may be 0.6 degrees or less. In FIG. 11, the relationship between the thermal cycle N and the bonding area S of the bonding portion 18b when the average value of the crystal orientation angle difference of the bonding portion 18b is 0.6 ° is a curve A, and the crystal of the bonding portion 18b The same relationship is shown by a curve B when the average value of the azimuth difference is in the state immediately after ultrasonic bonding (unprocessed). As apparent from FIG. 11, after the processing is performed so that the average value of the crystal orientation angle difference of the joint 18 b is 0.6 ° or less, the power semiconductor module 10 is used so that the joint is generated at the time of ultrasonic joining. It is understood that the residual stress is relaxed, and it is possible to obtain a bonded state that can withstand a thermal stress generated by a cold load at the bonded portion over a long period of time.

又、本発明の実施の形態では、帯状導電部材１８に、６．２５ｋｇｆ/ｍｍ2以下の引っ張り強度を有する材料が用られることが望ましい。図１２には、帯状導電部材１８に用いられる材料の引っ張り強度が、６．２５ｋｇｆ/ｍｍ2の場合の冷熱サイクルＮと接合部１８ｂの接合面積Ｓとの関係が曲線Ｃで、同値が６．８ｋｇｆ/ｍｍ2の場合の関係が曲線Ｄで示されている。曲線Ｃは、冷熱サイクルが４０００サイクルを越えても、接合部１８ｂの接合面積Ｓが０．２ｍｍ2程度確保されていることがわかる。このように、帯状導電部材１８に、６．２５ｋｇｆ/ｍｍ2以下の引っ張り強度を有する材料が用られることで、超音波接合時に接合部に生じる残留応力が緩和され、接合部において冷熱負荷により発生する熱応力に対し、長時間にわたり耐え得る接合状態を得ることが可能となる。 In the embodiment of the present invention, it is desirable to use a material having a tensile strength of 6.25 kgf / mm 2 or less for the strip-like conductive member 18. In FIG. 12, when the tensile strength of the material used for the strip-like conductive member 18 is 6.25 kgf / mm 2 , the relationship between the thermal cycle N and the joint area S of the joint 18b is a curve C, and the equivalent value is 6. The relationship in the case of 8 kgf / mm 2 is shown by curve D. Curve C shows that the bonding area S of the bonding portion 18b is secured to about 0.2 mm 2 even if the cooling and heating cycle exceeds 4000 cycles. As described above, the material having a tensile strength of 6.25 kgf / mm 2 or less is used for the strip-shaped conductive member 18, so that residual stress generated in the bonded portion at the time of ultrasonic bonding is relieved and generated by a cold load at the bonded portion. It is possible to obtain a bonded state that can withstand the thermal stress that occurs over a long period of time.

又、本発明の実施の形態では、帯状導電部材１８の接合部１８ｂの近傍に位置するネック部１８ｃに、ループ部１８ａよりも曲げ剛性を意図的に低下させたくびれ部１８ｄが形成されることが望ましい。図１３には、ネック部１８ｃの最小厚さが各々７６．３μｍと１４１．８μｍの場合における、冷熱サイクルＮと接合部１８ｂの接合面積Ｓとの関係が示されている。この図から明らかなように、ネック部１８ｃの最小厚さが各々７６．３μｍの場合には、冷熱サイクルが４０００サイクルを越えても、接合部１８ｂの接合面積Ｓが０．２ｍｍ2程度確保されているが、ネック部１８ｃの最小厚さが各々１４１．８μｍの場合には、冷熱サイクルが１５００サイクルを越えると、接合部１８ｂは剥離することとなる。このように、帯状導電部材１８の接合部１８ｂの近傍に位置するネック部１８ｃに、くびれ部１８ｄが形成されることで、帯状導電部材１８のループ部１８ａに生ずる熱伸縮を、ネック部１８ｃの変形を積極的に促すことにより吸収し、接合部１８ｂを剥離させる方向へと熱応力が作用することを回避することが可能となる。 Further, in the embodiment of the present invention, a neck portion 18d whose bending rigidity is intentionally lower than that of the loop portion 18a is formed in the neck portion 18c located in the vicinity of the joint portion 18b of the belt-like conductive member 18. Is desirable. FIG. 13 shows the relationship between the thermal cycle N and the bonding area S of the bonding portion 18b when the minimum thickness of the neck portion 18c is 76.3 μm and 141.8 μm, respectively. As is apparent from this figure, when the minimum thickness of the neck portion 18c is 76.3 μm, even if the thermal cycle exceeds 4000 cycles, the joint area S of the joint portion 18b is secured to about 0.2 mm 2. However, when the minimum thickness of the neck portion 18c is 141.8 μm, the joint portion 18b is peeled off when the cooling / heating cycle exceeds 1500 cycles. In this way, the neck portion 18d is formed in the neck portion 18c located in the vicinity of the joint portion 18b of the strip-shaped conductive member 18, so that the thermal expansion and contraction generated in the loop portion 18a of the strip-shaped conductive member 18 is reduced. It is possible to avoid the thermal stress from acting in the direction in which the joint 18b is peeled off by positively promoting the deformation.

さらに、本発明の実施の形態では、帯状導電部材１８のネック部１８ｃに６０°〜１２０°の角度が与えられていることが望ましい。前述のごとく、図７（ａ）は、ネック部１８ｃに角度θ＝９０°を与えた場合であるが、帯状導電部材１８の熱変形の前後（符号１８が変形前、１８’が変形後を示す。図７（ｂ）も同じ。）によるネック部１８ｃの角度変化はほとんど生じない。一方、図７（ｂ）はネック部１８ｃに角度θ＝３０°を与えた場合を示しているが、帯状導電部材１８の熱変形の前後でのネック部１８ｃの角度変化が顕著に表れ、接合部１８ｂの剥離を引き起こす大きな要因となることがわかる。
本発明者らによれば、帯状導電部材１８のネック部１８ｃに、熱変形の前後でのネック部１８ｃの角度変化を回避することが可能な角度、具体的には６０°〜１２０°の角度を与えることにより、帯状導電部材１８のループ部１８ａに生ずる熱伸縮に伴う熱応力が、接合部１８ｂに対する直角方向成分により多く配分され、接合部１８ｂを剥離させる方向へと熱応力が作用することを回避することができることが明らかとなった。 Furthermore, in the embodiment of the present invention, it is desirable that an angle of 60 ° to 120 ° is given to the neck portion 18c of the strip-like conductive member 18. As described above, FIG. 7A shows the case where the angle θ = 90 ° is given to the neck portion 18c. Before and after thermal deformation of the strip-shaped conductive member 18 (reference numeral 18 is before deformation, 18 ′ is after deformation). The angle change of the neck part 18c by FIG.7 (b) is also hardly produced. On the other hand, FIG. 7B shows a case where an angle θ = 30 ° is given to the neck portion 18c. However, the change in the angle of the neck portion 18c before and after thermal deformation of the belt-like conductive member 18 appears remarkably. It turns out that it becomes a big factor which causes peeling of the part 18b.
According to the present inventors, the neck portion 18c of the strip-shaped conductive member 18 is an angle that can avoid the change in the angle of the neck portion 18c before and after thermal deformation, specifically, an angle of 60 ° to 120 °. The thermal stress accompanying thermal expansion and contraction generated in the loop portion 18a of the strip-shaped conductive member 18 is more distributed to the component perpendicular to the joint portion 18b, and the thermal stress acts in the direction in which the joint portion 18b is peeled off. It became clear that can be avoided.

以上の理由から、本発明の実施の形態によれば、冷熱負荷による接合面積の劣化曲線（図９、図１１〜図１３）の傾きを小さくすることができる。したがって、図１４（ａ）に示されるように、アルミワイヤ２２と、本発明の実施の形態に係る帯状導電部材１８とに、同一のボンド荷重Ｆを加えた場合において、半導体素子１４の電極部に生じる酸化防止膜の破壊が、図１４（ｂ）に符号Ｅで示されるように、帯状導電部材１８において起こり難く、接合強度が低くなる傾向であるにもかかわらず、それを打消し、冷熱負荷による接合面積の劣化曲線の傾きを小さくするものである。よって、パワー半導体モジュールの性能及び信頼性の向上を図ることが可能となる。
上記の各作用効果は、帯状導電部材１８の断面が、角形、六角、八角等の多角形ないし楕円形の、何れの形状をなしている場合にも得られるものである。 For the above reasons, according to the embodiment of the present invention, it is possible to reduce the slope of the deterioration curve (FIGS. 9 and 11 to 13) of the junction area due to the cooling load. Therefore, as shown in FIG. 14A, when the same bond load F is applied to the aluminum wire 22 and the strip-like conductive member 18 according to the embodiment of the present invention, the electrode portion of the semiconductor element 14 As shown by the symbol E in FIG. 14B, the breakdown of the antioxidant film hardly occurs in the strip-like conductive member 18 and cancels it even though the bonding strength tends to be low. This is to reduce the slope of the deterioration curve of the junction area due to the load. Therefore, it is possible to improve the performance and reliability of the power semiconductor module.
Each of the above effects can be obtained when the cross-section of the strip-shaped conductive member 18 has any shape such as a polygon such as a square, a hexagon, and an octagon, or an ellipse.

本発明の実施の形態に係るパワー半導体モジュールの斜視図である。It is a perspective view of a power semiconductor module concerning an embodiment of the invention. （ａ）は、図１に示すパワー半導体モジュールの、帯状導電部材のループ部、接合部及びネック部を示す側面図であり、（ｂ）は、（ａ）の接合部の拡大図である。(A) is a side view which shows the loop part of a strip | belt-shaped electrically-conductive member, a junction part, and a neck part of the power semiconductor module shown in FIG. 1, (b) is an enlarged view of the junction part of (a). 上段には、図２に示す接合部の平面図を、中段には接合部の断面視図を、下段には接合部の透過視図を夫々示している。The upper part shows a plan view of the joint part shown in FIG. 2, the middle part shows a sectional view of the joint part, and the lower part shows a perspective view of the joint part. （ａ）は、本発明の実施の形態に係る帯状導電部材の接合部を示す模式図であり、（ｂ）は、ボンダツールにより接合部を形成した場合を示す模式図である。(A) is a schematic diagram which shows the junction part of the strip | belt-shaped electrically-conductive member which concerns on embodiment of this invention, (b) is a schematic diagram which shows the case where a junction part is formed with the bonder tool. 本発明の実施の形態に係る帯状導電部材のネック部に、くびれ部を形成した例を示す模式図である。It is a schematic diagram which shows the example which formed the constriction part in the neck part of the strip | belt-shaped electrically-conductive member which concerns on embodiment of this invention. 本発明の実施の形態に係る、くびれ部となる凹部が、１箇所ないし複数箇所設けられた帯状導電部材を示す模式図である。It is a schematic diagram which shows the strip | belt-shaped electrically-conductive member in which the recessed part used as the constriction part based on embodiment of this invention was provided in one place or multiple places. （ａ）は、本発明の実施の形態に係る帯状導電部材のネック部に角度θ＝９０°を与えた場合の、帯状導電部材の熱変形の前後の状態を示す模式図であり、（ｂ）は、本発明の実施の形態に係る帯状導電部材のネック部に角度θ＝３０°を与えた場合の、帯状導電部材の熱変形の前後の状態を示す模式図である。(A) is a schematic diagram which shows the state before and behind the thermal deformation of a strip | belt-shaped electrically-conductive member when angle (theta) = 90 degree is given to the neck part of the strip | belt-shaped electrically-conductive member which concerns on embodiment of this invention, (b) FIG. 4B is a schematic diagram showing states before and after thermal deformation of the band-shaped conductive member when an angle θ = 30 ° is given to the neck portion of the band-shaped conductive member according to the embodiment of the present invention. 本発明の実施の形態に係る、半導体素子に突起を形成し、帯状導電部材の接合部を半導体素子の電極に超音波接合する際に、ネック部が突起に当接して強制的に曲げられるようにすることで、ネック部に必要な角度を与えた例を示す模式図である。According to the embodiment of the present invention, when a protrusion is formed on a semiconductor element and the joining portion of the belt-like conductive member is ultrasonically joined to the electrode of the semiconductor element, the neck portion is brought into contact with the protrusion so as to be forcibly bent. It is a schematic diagram which shows the example which gave the required angle to the neck part by doing. 本発明の実施の形態に係る帯状導電部材の、冷熱負荷による接合面積の劣化曲線である。It is a degradation curve of the joining area by the cold load of the strip | belt-shaped electrically-conductive member which concerns on embodiment of this invention. 本発明の実施の形態に係る帯状導電部材の、冷熱負荷を受けた際の接合部の厚さとその接合面積との関係を示す曲線である。It is a curve which shows the relationship between the thickness of the junction part at the time of receiving the thermal load of the strip | belt-shaped electrically-conductive member which concerns on embodiment of this invention, and its joining area. 本発明の実施の形態に係る帯状導電部材の、冷熱負荷による接合面積の劣化曲線である。It is a degradation curve of the joining area by the cold load of the strip | belt-shaped electrically-conductive member which concerns on embodiment of this invention. 本発明の実施の形態に係る帯状導電部材の、冷熱負荷による接合面積の劣化曲線である。It is a degradation curve of the joining area by the cold load of the strip | belt-shaped electrically-conductive member which concerns on embodiment of this invention. 本発明の実施の形態に係る帯状導電部材の、冷熱負荷による接合面積の劣化曲線である。It is a degradation curve of the joining area by the cold load of the strip | belt-shaped electrically-conductive member which concerns on embodiment of this invention. 本発明の実施の形態に係る帯状導電部材を用いた場合の不利な点を説明するものであり、（ａ）はボンド荷重付与前の状態を、（ｂ）はボンド荷重付与後の状態を示す模式図である。It demonstrates the disadvantage at the time of using the strip | belt-shaped electrically-conductive member which concerns on embodiment of this invention, (a) shows the state before bond load provision, (b) shows the state after bond load provision. It is a schematic diagram.

符号の説明Explanation of symbols

１０：パワー半導体モジュール、１２：基板、１４：半導体素子、１６：バスバー、１８：帯状導電部材、１８ａ：ループ部、１８ｂ：接合部、１８ｃ：ネック部、１８ｄ：くびれ部
10: power semiconductor module, 12: substrate, 14: semiconductor element, 16: bus bar, 18: strip-shaped conductive member, 18a: loop portion, 18b: joint portion, 18c: neck portion, 18d: constricted portion

Claims (18)

基板に配置された半導体素子に対し、厚さが０．１５ｍｍ〜０．６ｍｍ、幅が０．８４ｍｍ以上である断面角形の帯状導電部材が超音波接合され、かつ、該帯状導電部材の少なくとも接合部の厚さが１２０μｍ以下となっていることを特徴とするパワー半導体モジュール。 A band-shaped conductive member having a square cross section having a thickness of 0.15 mm to 0.6 mm and a width of 0.84 mm or more is ultrasonically bonded to the semiconductor element disposed on the substrate, and at least the band-shaped conductive member is bonded. A power semiconductor module, wherein the thickness of the portion is 120 μm or less. 基板に配置された半導体素子に対し、厚さが０．１５ｍｍ〜０．６ｍｍ、幅が０．８４ｍｍ以上である断面角形の帯状導電部材が超音波接合されていることを特徴とするパワー半導体モジュール。 A power semiconductor module characterized in that a strip-shaped conductive member having a square cross section having a thickness of 0.15 mm to 0.6 mm and a width of 0.84 mm or more is ultrasonically bonded to a semiconductor element disposed on a substrate. . 基板に配置された半導体素子に対し、少なくとも接合部の厚さが１２０μｍ以下の帯状導電部材が超音波接合されていることを特徴とするパワー半導体モジュール。 A power semiconductor module, wherein at least a band-shaped conductive member having a bonding portion of 120 μm or less is ultrasonically bonded to a semiconductor element disposed on a substrate. 前記接合部の超音波接合時の接合面積が０．８０ｍｍ2以上であることを特徴とする請求項１から３のいずれか１項記載のパワー半導体モジュール。 4. The power semiconductor module according to claim 1, wherein a bonding area of the bonding portion at the time of ultrasonic bonding is 0.80 mm 2 or more. 5. 前記接合部の結晶方位角差の平均値が０．６°以下となるように、超音波接合後に熱処理がなされていることを特徴とする請求項１から４のいずれか１項記載のパワー半導体モジュール。 5. The power semiconductor according to claim 1, wherein heat treatment is performed after ultrasonic bonding so that an average value of a crystal orientation angle difference of the bonding portion is 0.6 ° or less. module. 前記接合部の結晶方位角差の平均値が０．６°以下となるように、超音波接合後に所定時間放置されていることを特徴とする請求項１から５のいずれか１項記載のパワー半導体モジュール。 The power according to any one of claims 1 to 5, wherein the power is left for a predetermined time after ultrasonic bonding so that an average value of crystal orientation angle differences of the bonding portion is 0.6 ° or less. Semiconductor module. 前記帯状導電部材に、６．２５ｋｇｆ/ｍｍ2以下の引っ張り強度を有する材料が用いられていることを特徴とする請求項１から６のいずれか１項記載のパワー半導体モジュール。 7. The power semiconductor module according to claim 1, wherein a material having a tensile strength of 6.25 kgf / mm 2 or less is used for the band-shaped conductive member. 前記帯状導電部材の、前記接合部の近傍に位置するネック部に、くびれ部が形成されていることを特徴とする請求項１から７のいずれか１項記載のパワー半導体モジュール。 The power semiconductor module according to any one of claims 1 to 7, wherein a constricted portion is formed in a neck portion of the strip-shaped conductive member located in the vicinity of the joint portion. 前記ネック部に６０°〜１２０°の角度が与えられていることを特徴とする請求項１から８のいずれか１項記載のパワー半導体モジュール。 The power semiconductor module according to claim 1, wherein an angle of 60 ° to 120 ° is given to the neck portion. 基板に配置された半導体素子に対し、厚さが０．１５ｍｍ〜０．６ｍｍ、幅が０．８４ｍｍ以上である断面角形の帯状導電部材を超音波接合し、かつ、該帯状導電部材の少なくとも接合部の厚さが１２０μｍ以下とすることを特徴とするパワー半導体モジュールの製造方法。 A band-shaped conductive member having a square section with a thickness of 0.15 mm to 0.6 mm and a width of 0.84 mm or more is ultrasonically bonded to the semiconductor element disposed on the substrate, and at least the band-shaped conductive member is bonded. A method for manufacturing a power semiconductor module, wherein the thickness of the portion is 120 μm or less. 基板に配置された半導体素子に対し、厚さが０．１５ｍｍ〜０．６ｍｍ、幅が０．８４ｍｍ以上である断面角形の帯状導電部材を超音波接合することを特徴とするパワー半導体モジュールの製造方法。 Manufacturing of a power semiconductor module characterized by ultrasonically bonding a band-shaped conductive member having a square section with a thickness of 0.15 mm to 0.6 mm and a width of 0.84 mm or more to a semiconductor element disposed on a substrate Method. 基板に配置された半導体素子に対し、少なくとも接合部の厚さが１２０μｍ以下の帯状導電部材を超音波接合することを特徴とするパワー半導体モジュールの製造方法。 A method of manufacturing a power semiconductor module, comprising ultrasonically bonding a strip-shaped conductive member having a bonding portion thickness of 120 μm or less to a semiconductor element disposed on a substrate. 前記接合部の超音波接合時の接合面積を０．８０ｍｍ2以上確保することを特徴とする請求項９から１２のいずれか１項記載のパワー半導体モジュールの製造方法。 The method for manufacturing a power semiconductor module according to any one of claims 9 to 12, wherein a bonding area of 0.80 mm 2 or more during ultrasonic bonding of the bonding portion is ensured. 前記接合部の結晶方位角差の平均値が０．６°以下となるように、超音波接合後に熱処理を施すことを特徴とする請求項９から１３のいずれか１項記載のパワー半導体モジュールの製造方法。 The power semiconductor module according to any one of claims 9 to 13, wherein heat treatment is performed after ultrasonic bonding so that an average value of a crystal orientation angle difference of the bonding portion is 0.6 ° or less. Production method. 前記接合部の結晶方位角差の平均値が０．６°以下となるように、超音波接合後に所定時間放置することを特徴とする請求項９から１４のいずれか１項記載のパワー半導体モジュールの製造方法。 The power semiconductor module according to any one of claims 9 to 14, wherein the power semiconductor module is left for a predetermined time after ultrasonic bonding so that an average value of a crystal orientation angle difference of the bonding portion is 0.6 ° or less. Manufacturing method. 前記帯状導電部材に、６．２５ｋｇｆ/ｍｍ2以下の引っ張り強度を有する材料を用いることを特徴とする請求項９から１５のいずれか１項記載のパワー半導体モジュールの製造方法。 The method for manufacturing a power semiconductor module according to claim 9, wherein a material having a tensile strength of 6.25 kgf / mm 2 or less is used for the strip-shaped conductive member. 前記帯状導電部材の、前記接合部の近傍に位置するネック部に、くびれ部を形成することを特徴とする請求項９から１６のいずれか１項記載のパワー半導体モジュールの製造方法。 The method for manufacturing a power semiconductor module according to any one of claims 9 to 16, wherein a constricted portion is formed in a neck portion of the strip-shaped conductive member located in the vicinity of the joint portion. 前記ネック部に６０°〜１２０°の角度を与ることを特徴とする請求項９から１７のいずれか１項記載のパワー半導体モジュール。
The power semiconductor module according to claim 9, wherein an angle of 60 ° to 120 ° is given to the neck portion.
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