[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JP2007194270A - Bonding ribbon and bonding method using the same - Google Patents

Bonding ribbon and bonding method using the same Download PDF

Info

Publication number
JP2007194270A
JP2007194270A JP2006008842A JP2006008842A JP2007194270A JP 2007194270 A JP2007194270 A JP 2007194270A JP 2006008842 A JP2006008842 A JP 2006008842A JP 2006008842 A JP2006008842 A JP 2006008842A JP 2007194270 A JP2007194270 A JP 2007194270A
Authority
JP
Japan
Prior art keywords
bonding
ribbon
face
electrode
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006008842A
Other languages
Japanese (ja)
Other versions
JP4612550B2 (en
Inventor
Koichi Takao
紘一 高尾
Shigeru Nishino
茂 西野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ultrasonic Engineering Co Ltd
Original Assignee
Ultrasonic Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ultrasonic Engineering Co Ltd filed Critical Ultrasonic Engineering Co Ltd
Priority to JP2006008842A priority Critical patent/JP4612550B2/en
Publication of JP2007194270A publication Critical patent/JP2007194270A/en
Application granted granted Critical
Publication of JP4612550B2 publication Critical patent/JP4612550B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/77—Apparatus for connecting with strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/37124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4007—Shape of bonding interfaces, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4009—Loop shape
    • H01L2224/40091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/40247—Connecting the strap to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4807—Shape of bonding interfaces, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48455—Details of wedge bonds
    • H01L2224/48456—Shape
    • H01L2224/48458—Shape of the interface with the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/77—Apparatus for connecting with strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/842—Applying energy for connecting
    • H01L2224/84201—Compression bonding
    • H01L2224/84205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a bonding ribbon which is provided with current capacity equal to a ribbon whose bonding face with an electrode is flat, and realizes equivalent or above and more stable bonding strength; and to provide a bonding method using the ribbon. <P>SOLUTION: The ribbon 1 is provided with five projected bars 2 following a longitudinal direction on a bonding face. Tops of the projected bars 2 are on the almost same plane, and the bonding face, a face opposite to the bonding face and the straight line are almost parallel in the cross section. Thus, distances from the non-bonding face to the tops of the projected bars 2 are almost constant. For bonding two electrodes, bonding is performed by using the ribbon 1 where a plurality of the projected bars 2 whose tops are in the almost same plane are installed on one face of the bonding side. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、半導体装置等の電子デバイスの製造の際に、超音波ボンディングにより接合され電極間を接続するリボン、およびこれを用いたボンディング方法に関する。   The present invention relates to a ribbon that is bonded by ultrasonic bonding to connect electrodes when an electronic device such as a semiconductor device is manufactured, and a bonding method using the ribbon.

半導体装置の製造において、半導体チップ上に設けられた接続電極（ボンディングパッド）と半導体パッケージに設けられた外部引出し用端子（リード）とを電気的に接続するために、アルミニウム等の導電性ワイヤを用いる超音波ワイヤボンディング方法が広く使用されている。この方法はワイヤに荷重および超音波振動を加えて、ボンディングパッドおよびワイヤの表面に形成された酸化膜を破って原子を表面に露出させ、ボンディングパッドとワイヤとの界面に塑性流動を発生させて互いに密着する新生面を漸増させながら原子間結合させることにより接合する。   In manufacturing a semiconductor device, a conductive wire such as aluminum is used to electrically connect a connection electrode (bonding pad) provided on a semiconductor chip and an external lead terminal (lead) provided on a semiconductor package. The ultrasonic wire bonding method used is widely used. This method applies a load and ultrasonic vibration to the wire, breaks the oxide film formed on the bonding pad and the surface of the wire, exposes atoms to the surface, and generates a plastic flow at the interface between the bonding pad and the wire. Joining is performed by interatomic bonding while gradually increasing new surfaces that are in close contact with each other.

ところで、近年、パワーデバイスの応用分野が多岐にわたり、ハイパワー化が求められている。そのため接続導電体の電流容量の増大が必要となり、これを実現するためには電流路内の電気抵抗を減らす必要等がある。そのため、電流路の断面積を増大して電流容量を増大する技術として、断面が略長方形（扁平形状）の導電体（以下「リボン」と呼ぶ。）を用いたワイヤボンディング方法が提案されている（特許文献１参照）。
特開２００４−３３６０４３号公報 By the way, in recent years, there are various application fields of power devices, and high power is required. For this reason, it is necessary to increase the current capacity of the connecting conductor, and in order to realize this, it is necessary to reduce the electrical resistance in the current path. Therefore, as a technique for increasing the current capacity by increasing the cross-sectional area of the current path, a wire bonding method using a conductor (hereinafter referred to as “ribbon”) having a substantially rectangular (flat) cross section has been proposed. (See Patent Document 1).
JP 2004-336043 A

しかしながら、従来の接合面が平坦なリボンを用いたワイヤボンディング方法では、ボンディングパッドおよびリボンの表面はともに微視的には平坦ではないため、ボンディングの初期に接触する部分の位置、大きさが一定とならない。そのため酸化膜を破って塑性流動が開始されても接合される新生面の広がりを容易にすることができない。また、互いに平面的である電極とリボンとの接触面同士のボンディングではリボンが塑性変形し難いため、例え全面を接触させたとしても接触面に酸化膜が残留することがあり、接触面全面にわたる原子間結合させるのが困難なことがある。そのため安定したボンディング強度（接合強度）を得ることができない。   However, in the conventional wire bonding method using a ribbon with a flat bonding surface, the bonding pad and the surface of the ribbon are not microscopically flat, so the position and size of the contact portion at the initial stage of bonding are constant. Not. Therefore, even if the oxide film is broken and plastic flow is started, the spread of the new surface to be joined cannot be facilitated. In addition, since the ribbon is difficult to be plastically deformed when bonding the contact surfaces of the electrode and the ribbon that are planar to each other, even if the entire surface is contacted, an oxide film may remain on the contact surface, and the entire contact surface may be covered. It can be difficult to bond between atoms. Therefore, stable bonding strength (bonding strength) cannot be obtained.

そこで、リボンを用いた超音波ボンディングにおいて、従来技術によるリボンと比較して、同等の電流容量を備え、同等若しくは同等以上であってより安定した接合強度を実現できるボンディング用リボン、およびこれを用いたボンディング方法を提供することを課題とする。   Therefore, in ultrasonic bonding using a ribbon, a bonding ribbon that has an equivalent current capacity, is equivalent to or equal to or higher than that of a conventional ribbon, and can realize a more stable bonding strength, and a method for using the same. It is an object to provide a bonding method.

上記課題を解決するための第１の手段として、本発明は、超音波ボンディングに供されるボンディングリボンであって、頂部が略同一平面上にある複数の凸部を接合側の一方の面に備えたボンディングリボンを提供する。   As a first means for solving the above problems, the present invention provides a bonding ribbon used for ultrasonic bonding, wherein a plurality of convex portions whose top portions are substantially on the same plane are provided on one surface on the bonding side. Provided with a bonding ribbon provided.

これによると、ボンディングの初期に被接合面に接触する複数の凸部の頂部が形成され、その位置、大きさを所望のものとすることにより、ボンディング時の原子間結合によって接合される新生面の広がりを容易にすることができる。また、複数の凸部の頂部の面積を小さくすることにより、リボンと被着物との摩擦が発生し易くなって、表面に形成されている酸化膜を容易に破ることが可能となる。初期の塑性流動を発生させやすいため、比較的小さな荷重および超音波エネルギにより、接合面が平坦なリボンと比べて安定した接合強度の確保を実現できる。   According to this, the tops of a plurality of convex portions that are in contact with the surface to be joined are formed at the initial stage of bonding, and by making the position and size as desired, a new surface to be joined by interatomic bonding at the time of bonding is formed. Spreading can be facilitated. In addition, by reducing the area of the tops of the plurality of convex portions, friction between the ribbon and the adherend tends to occur, and the oxide film formed on the surface can be easily broken. Since it is easy to generate the initial plastic flow, stable bonding strength can be ensured by a relatively small load and ultrasonic energy as compared with a ribbon having a flat bonding surface.

また、上記課題を解決するための第２の手段として、本発明は、第１の手段であるボンディングリボンにおいて、前記凸部が長手方向に延在する突条であるボンディングリボンを提供する。   In addition, as a second means for solving the above-described problems, the present invention provides a bonding ribbon, which is a first aspect of the bonding ribbon, in which the protrusions are protrusions extending in the longitudinal direction.

これによると、ボンディングの初期に接触する複数の凸部の頂部が長手方向に延在して形成され、その方向がリボンに加える超音波振動の方向と一致し、従来のワイヤボンディング技術を利用した効果的な接合を行うことができる   According to this, the tops of a plurality of convex portions that contact in the initial stage of bonding are formed to extend in the longitudinal direction, and the direction coincides with the direction of ultrasonic vibration applied to the ribbon, and the conventional wire bonding technology is used. Effective bonding can be performed

また、上記課題を解決するための第３の手段として、本発明は、２つの電極を接続するボンディング方法であって、頂部が略同一平面上にある複数の凸部を接合側の一方の面に備えたリボンを用意する第１の過程と、第１の電極の上面に、前記リボンの接合面を下にしてボンディングツールにより超音波ボンディングする第２の工程と、前記ボンディングツールが第２の電極の上面へ移動しながら前記リボンにループを形成する第３の工程と、前記第２の電極の上面に、前記ループを形成したリボンの接合面を下にして、前記ボンディングツールにより超音波ボンディングする第４の工程とを有するワイヤボンディング方法を提供する。   As a third means for solving the above-mentioned problem, the present invention provides a bonding method for connecting two electrodes, wherein a plurality of convex portions whose top portions are substantially on the same plane are connected to one surface on the bonding side. A first step of preparing a ribbon prepared for the second step, a second step of ultrasonic bonding with a bonding tool on the upper surface of the first electrode with the bonding surface of the ribbon facing down, and the bonding tool includes a second step A third step of forming a loop on the ribbon while moving to the upper surface of the electrode; and an ultrasonic bonding by the bonding tool with the bonding surface of the ribbon having the loop formed on the upper surface of the second electrode. A wire bonding method having a fourth step.

また、上記課題を解決するための第４の手段として、本発明は、第３の手段であるワイヤボンディング方法において、前記凸部が長手方向に延在する突条であるワイヤボンディング方法を提供する。   Further, as a fourth means for solving the above-mentioned problem, the present invention provides a wire bonding method as a third means, wherein the convex portion is a protrusion extending in the longitudinal direction. .

これらにより、前述の効果を発揮し得る接合面を備えたリボンを超音波ボンディングして半導体装置等の電子デバイスの製造に使用することができる。   By these, the ribbon provided with the joint surface which can exhibit the above-mentioned effect can be ultrasonically bonded, and it can be used for manufacture of electronic devices, such as a semiconductor device.

上記手段を用いることにより、接合面が平坦なリボンを用いたボンディングと比較して、同等の電流容量を備え、同等若しくは同等以上であってより安定した接合強度を実現するボンディングが可能となる。   By using the above-mentioned means, it is possible to perform bonding that has equivalent current capacity, is equal to or equal to or higher, and realizes more stable bonding strength as compared with bonding using a ribbon having a flat bonding surface.

また、リボンの電極に接触する側の面は、電極との初期の接触面積が小さく塑性変形し易いため、半導体素子の表面に発生する応力によって半導体素子が破壊される可能性が低く抑えられる。また、ボンディングツールにより押圧されて塑性変形する部分の端部、所謂ネック部分の損傷も抑えられ、上面クラックの発生が抑制される。 In addition, since the surface of the ribbon that contacts the electrode has a small initial contact area with the electrode and is easily plastically deformed, the possibility that the semiconductor element is destroyed by the stress generated on the surface of the semiconductor element is kept low. Further, damage to the end portion of the portion that is plastically deformed by being pressed by the bonding tool, that is, a so-called neck portion is suppressed, and the occurrence of cracks on the upper surface is suppressed.

また、前記平坦なリボンを全面的に接合できた場合には、リボンと電極との接合面が大きくなり、リボンの材料であるアルミニウムと電極下のシリコンとの熱膨張率の不一致によって生じる応力およびひずみも大きくなって、接合部の疲労破壊が発生し易い。しかし、リボンの表面に被接合面に接触する複数の凸部の頂部を形成して、各接合面を独立させることによりこれを抑制することができる。なお、接合部の疲労破壊が問題とならないような場合には、各接合面を互いに連結させて接合面積を拡大するような実施形態としてもよい。さらに、リボンは通電により発熱するが、本発明に係るリボンは、同断面積のリボンと比べてリボンの表面積が大きいため、効率的に放熱することもできる。 In addition, when the flat ribbon can be bonded over the entire surface, the bonding surface between the ribbon and the electrode becomes large, and stress caused by mismatch in thermal expansion coefficient between aluminum, which is the material of the ribbon, and silicon under the electrode, and The strain also increases, and fatigue fracture of the joint is likely to occur. However, this can be suppressed by forming the tops of a plurality of convex portions in contact with the surface to be joined on the surface of the ribbon and making each joining surface independent. In the case where fatigue fracture of the joint does not become a problem, an embodiment in which the joint areas are expanded by connecting the joint surfaces to each other may be employed. Furthermore, although the ribbon generates heat when energized, the ribbon according to the present invention has a larger surface area than the ribbon having the same cross-sectional area, and therefore can efficiently dissipate heat.

以下、本発明の実施の形態を、図面を参照しながら説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

＜第１実施形態＞
図１は、本発明の第１実施形態によるボンディングリボンを示す斜視図である。図中における上方の面が接合面であって、実際にボンディングに供するときにはこの面を下にして、ボンディングパッドまたはリードフレーム等の電極の上面に接合される。アルミニウムからなるリボン１は、リボンの長手方向に沿った５本の突条２を接合面に備えている。換言すれば、リボンの長手方向に沿った平行な４本の溝が接合面に形成されている。 <First Embodiment>
FIG. 1 is a perspective view showing a bonding ribbon according to a first embodiment of the present invention. The upper surface in the drawing is a bonding surface, and when actually used for bonding, this surface is faced down and bonded to the upper surface of an electrode such as a bonding pad or a lead frame. The ribbon 1 made of aluminum includes five protrusions 2 along the longitudinal direction of the ribbon on the joint surface. In other words, four parallel grooves along the longitudinal direction of the ribbon are formed on the joint surface.

図２は、本発明の第１実施形態によるボンディングリボンの断面図である。リボン１の接合面には、頂部が略同一平面上にある複数の突条２が形成されている。突条２の頂部は、断面において略同一直線上にあり、接合面と反対側の面（以下、非接合面と記す）とこの直線とが略平行であることから、非接合面から突条２の頂部までの距離（以下、凸部の厚さと記す）が略一定である。突条２同士の間は、非接合面からの厚さが突条２の厚さよりも薄くなっている。   FIG. 2 is a cross-sectional view of the bonding ribbon according to the first embodiment of the present invention. On the joining surface of the ribbon 1, a plurality of ridges 2 having apexes on substantially the same plane are formed. The top of the ridge 2 is substantially on the same straight line in the cross section, and the surface opposite to the joint surface (hereinafter referred to as a non-joint surface) and this straight line are substantially parallel. The distance to the top of 2 (hereinafter referred to as the thickness of the convex portion) is substantially constant. Between the protrusions 2, the thickness from the non-joint surface is thinner than the thickness of the protrusion 2.

本実施形態では、リボン１の幅は１．５ｍｍであり、非接合面から凸部までの厚さは２００μｍである。５本の突条２が、リボン１の長手方向に延在するように形成されている。５本の突条２は、各突条の幅や大きさ、間隔を略同一に形成されており、所謂平目ローレット処理を施されたような形状となっている。そして、リボン１は、断面が円形状のワイヤを５本等間隔に配置したような電極との接触面を有することとなり、従来から実績のあるワイヤの接合メカニズムに近い接合メカニズムで接合され得る。   In the present embodiment, the width of the ribbon 1 is 1.5 mm, and the thickness from the non-joint surface to the convex portion is 200 μm. Five ridges 2 are formed so as to extend in the longitudinal direction of the ribbon 1. The five ridges 2 are formed so that the width, size, and interval of each ridge are substantially the same, and have a shape that is so-called flat knurled. The ribbon 1 has a contact surface with an electrode in which five wires having a circular cross section are arranged at equal intervals, and can be bonded by a bonding mechanism close to a conventional bonding mechanism of wires.

＜第２実施形態＞
図３は、本発明の第２実施形態によるボンディングリボンの断面図である。リボン３の幅および突条４の厚さは第１実施形態と同じであり、凸部が突条４として長手方向に延在している点でも同じである。第１実施形態と異なる点は、突条４の数が７本とされていること、および、断面において突条４が連続した曲線から構成されていることである。そのため、突条４の頂部はワイヤの接触により近い接触面を形成する。 Second Embodiment
FIG. 3 is a cross-sectional view of a bonding ribbon according to a second embodiment of the present invention. The width of the ribbon 3 and the thickness of the ridge 4 are the same as in the first embodiment, and the same is true in that the convex portion extends in the longitudinal direction as the ridge 4. The difference from the first embodiment is that the number of the ridges 4 is seven, and that the ridges 4 are composed of continuous curves in the cross section. Therefore, the top of the protrusion 4 forms a contact surface that is closer to the contact of the wire.

＜第３実施形態＞
図４は、本発明の第３実施形態によるボンディングリボンを示し、（Ａ）は下面図であり、（Ｂ）は（Ａ）中のＢ−Ｂ矢視図であり、（Ｃ）は（Ａ）中のＣ−Ｃ断面図である。リボン５の幅および凸部６の厚さは第１，第２実施形態と同じであるが、凸部６が長手方向に延在する突条ではない点で異なる。長手方向と斜めに交差する２方向に延在するように溝が形成されることにより、凸部６は長手方向および幅方向に所定の間隔で連成されている。所謂綾目ローレット処理を施されたような形状となっている。 <Third Embodiment>
4A and 4B show a bonding ribbon according to a third embodiment of the present invention, in which FIG. 4A is a bottom view, FIG. 4B is a BB arrow view in FIG. It is CC sectional drawing in the inside. The width of the ribbon 5 and the thickness of the convex portion 6 are the same as those in the first and second embodiments, but are different in that the convex portion 6 is not a ridge extending in the longitudinal direction. The grooves 6 are formed so as to extend in two directions obliquely intersecting the longitudinal direction, whereby the convex portions 6 are coupled at predetermined intervals in the longitudinal direction and the width direction. The so-called Ayame knurling process is applied.

ここまで本発明に係るリボンの具体的実施形態について説明してきたが、本発明に係るリボンは、所望の方向に連成された複数の凸部、若しくは、２本以上の突条を備えていればよく、その形状や大きさ、数、方向等を限定するものではない。例えば、幅方向の両端に位置する凸部の横寸法を中央部に位置する凸部の横寸法より小さくするような実施形態や、凸部の間隔を不規則にするような実施形態としてもよい。また、接合面に配置された凸部が部分的に連結されることにより全体として１つの凸部となるような実施形態であっても、ボンディングの初期に被接合面に接触する複数の凸部の頂部が形成されているのであれば、本発明の技術的思想の中に含まれる。一方、凸部の横寸法があまり大きいと、ボンディング初期の塑性流動を発生させ難いため、一般的なワイヤボンディングと同様に本発明に係るリボンの凸部についても、隣接する凸部同士の間隔を５００μｍ以下とすることが望ましい。また、断面において、凸部の頂部の幅が広く初期の接触面積が大きい場合には、凸部の数を増やす等して直線部分の幅を小さくし、例えば図１から図３に示すように２００μｍから４００μｍ程度とするのが好ましい。   So far, specific embodiments of the ribbon according to the present invention have been described. However, the ribbon according to the present invention may be provided with a plurality of convex portions or two or more protrusions coupled in a desired direction. The shape, size, number, direction and the like are not limited. For example, an embodiment in which the lateral dimension of the convex portions located at both ends in the width direction is made smaller than the lateral dimension of the convex portion located in the central portion, or an embodiment in which the spacing between the convex portions is irregular may be employed. . Further, even in an embodiment in which the convex portions arranged on the joining surface are partially connected to form one convex portion as a whole, a plurality of convex portions that come into contact with the joined surface at the initial stage of bonding If the top of is formed, it is included in the technical idea of the present invention. On the other hand, if the lateral dimension of the convex portion is too large, it is difficult to generate plastic flow in the initial stage of bonding.Therefore, the ribbon convex portion according to the present invention also has an interval between adjacent convex portions as in general wire bonding. It is desirable that the thickness be 500 μm or less. Further, in the cross section, when the top width of the convex portion is wide and the initial contact area is large, the width of the linear portion is reduced by increasing the number of convex portions, for example, as shown in FIGS. The thickness is preferably about 200 μm to 400 μm.

このように接合面に複数の凸部を備えたリボンは、超音波ボンディングに利用しうる材料からなればよく、一般的にはアルミニウムが用いられるが、アルミニウム合金、金、銅またはその他の材料からなってもよい。   As described above, the ribbon having a plurality of convex portions on the joint surface may be made of a material that can be used for ultrasonic bonding. Generally, aluminum is used, but from aluminum alloy, gold, copper, or other materials. It may be.

＜第４実施形態＞
図５は、本発明の第４実施形態によるワイヤボンディング方法を実施する様子を示した斜視図である。半導体装置１１上にはダイパッド１２が配設され、その上に半導体チップ１３がボンドされている。半導体チップ１３の上面にはボンディングパッド１４が設けられている。ダイパッド１２の周辺にはボンディングパッド１４に対応する複数のリード１５が配設されており、接合面に突条を備えたリボン１０によってそれぞれ電気的に接続される。ボンディングヘッド２１は、リボン１０を超音波ボンディングするためのボンディングツール２２、リボン１０をボンディングツール２２の先端に導くためのワイヤガイド２３、ワイヤクランプ２４およびカッタ２５を含み、ワイヤクランプ２４はワイヤガイド２３の上方に配設され、ボンディングツール２２に対してワイヤガイド２３の反対側にカッタ２５が配設されている。 <Fourth embodiment>
FIG. 5 is a perspective view illustrating a state of performing the wire bonding method according to the fourth embodiment of the present invention. A die pad 12 is disposed on the semiconductor device 11, and a semiconductor chip 13 is bonded thereon. A bonding pad 14 is provided on the upper surface of the semiconductor chip 13. A plurality of leads 15 corresponding to the bonding pads 14 are disposed around the die pad 12 and are electrically connected by ribbons 10 each having a protrusion on the bonding surface. The bonding head 21 includes a bonding tool 22 for ultrasonic bonding of the ribbon 10, a wire guide 23 for guiding the ribbon 10 to the tip of the bonding tool 22, a wire clamp 24, and a cutter 25. The wire clamp 24 is a wire guide 23. A cutter 25 is disposed on the opposite side of the wire guide 23 with respect to the bonding tool 22.

ボンディングパッド１４およびリード１５の２つの電極を接続するボンディング手順は、まず、一方の面に長手方向に延在する複数の突条を備えたリボン１０を用意し、この面が下になって接合されるようにワイヤガイド２３に挿通してボンディングヘッド２１に装着する。続いてボンディングツール２２は、第１の電極としてのボンディングパッド１４の上面にリボン１０を超音波ボンディングする。ここで、リボン１０のボンディングパッド１４との接触面は、ボンディング初期においては複数の突条の頂部部分のみであるが、リボン１０に荷重および超音波振動が加わることによって、その面積が漸増されていく。   The bonding procedure for connecting the two electrodes of the bonding pad 14 and the lead 15 is as follows. First, a ribbon 10 having a plurality of protrusions extending in the longitudinal direction on one surface is prepared, and this surface is down and bonded. In this manner, the wire guide 23 is inserted and attached to the bonding head 21. Subsequently, the bonding tool 22 ultrasonically bonds the ribbon 10 to the upper surface of the bonding pad 14 as the first electrode. Here, the contact surface of the ribbon 10 with the bonding pad 14 is only the top portion of the plurality of protrusions in the initial stage of bonding, but the area is gradually increased by applying a load and ultrasonic vibration to the ribbon 10. Go.

次に、ボンディングツール２２は、第２の電極としてのリード１５の上方へ移動しながら、リボン１０にループを形成する。そして、リード１５の上面に、ループを形成して引き渡されたリボン１０を、ボンディングツール２２により超音波ボンディングする。この場合にも、リボン１０の接触面は、ボンディング初期においては複数の突条の頂部部分のみであるが、次第にその面積が漸増されていく。その後、ボンディングツール２２はワイヤガイド２３側へさらに移動し、リボン１０が引き出されないようにワイヤクランプ２４により固定して、カッタ２５を使用してリボン１０を切断する。同様に隣接するボンディングパッド１４およびリード１５を接続していく。   Next, the bonding tool 22 forms a loop on the ribbon 10 while moving above the lead 15 as the second electrode. Then, the ribbon 10 delivered in a loop form on the upper surface of the lead 15 is ultrasonically bonded by the bonding tool 22. Also in this case, the contact surface of the ribbon 10 is only the top portion of the plurality of protrusions in the initial stage of bonding, but the area gradually increases. Thereafter, the bonding tool 22 further moves to the wire guide 23 side, is fixed by a wire clamp 24 so that the ribbon 10 is not pulled out, and the ribbon 10 is cut using the cutter 25. Similarly, adjacent bonding pads 14 and leads 15 are connected.

なお、ここに示す本発明のボンディング方法に係る実施形態では、電極を接続するリボンに形成された凸部の本数を７本としているが、前述のように所望の方向に連成された複数の凸部、若しくは、２本以上の長手方向に延在する突条を備えていればよく、特定の形状や大きさ、数、方向等に限定されるものではない。また、前述した通り、ボンディング完了時において、各接合面を独立させることにより接合部の疲労破壊を抑制するような実施形態としてもよく、または、各接合面を互いに連結させて接合面積を拡大するような実施形態としてもよい。   In the embodiment according to the bonding method of the present invention shown here, the number of convex portions formed on the ribbon connecting the electrodes is seven, but as described above, a plurality of the convex portions are coupled in a desired direction. What is necessary is just to provide the convex part or the protruding item | line extended in two or more longitudinal directions, and it is not limited to a specific shape, a magnitude | size, a number, a direction, etc. In addition, as described above, when bonding is completed, each bonding surface may be made independent to suppress fatigue fracture of the bonded portion, or each bonding surface may be connected to each other to expand the bonding area. Such an embodiment may be adopted.

図６は、リボンの接合跡を表す写真である。図面左側の列は、本発明に係る接合面に突条を備えたリボンの接合跡の写真であり、図１，図２に示す、幅が１．５ｍｍ、厚さが２００μｍのアルミニウムからなるリボン（以下「突条あり」と呼ぶ）であって、５本の突条が形成されたリボンが用いられている。図面右側の列は、従来技術による表面が平坦なリボンの接合跡の写真であり、同様に幅が１．５ｍｍ、厚さが２００μｍのアルミニウムからなるリボン（以下「突条なし」と呼ぶ）が用いられている。リボンが接合される被接合体には、表面がニッケルメッキ処理された基板が用いられている。   FIG. 6 is a photograph showing a bonding mark of the ribbon. The column on the left side of the drawing is a photograph of a bonding mark of a ribbon having protrusions on the bonding surface according to the present invention, and is a ribbon made of aluminum having a width of 1.5 mm and a thickness of 200 μm as shown in FIGS. (Hereinafter referred to as “with ridges”), and a ribbon formed with five ridges is used. The column on the right side of the drawing is a photograph of a bonding surface of a ribbon having a flat surface according to the prior art. Similarly, a ribbon made of aluminum having a width of 1.5 mm and a thickness of 200 μm (hereinafter referred to as “no protrusion”). It is used. A substrate whose surface is nickel-plated is used as an object to be bonded to a ribbon.

これらの写真は、上記２種類のリボンを対象に、同一の超音波ボンディング装置およびボンディングツールを用い、ボンディング荷重を２４．５２Ｎに、超音波発振器のパワー目盛りを１８０ＦＦとした同一条件において、発振時間Ｔを２５ｍｓ、５０ｍｓ、７５ｍｓ、１００ｍｓ、１２５ｍｓ、１５０ｍｓと変化させて上記被接合体にボンディングを行い、リボンを剥してその接合跡を撮影したものである。なお、使用されたボンディングツールは、先端幅が１．９ｍｍで、ボンド長さが０．６ｍｍのものであった。   These photographs are for the two types of ribbons described above, using the same ultrasonic bonding device and bonding tool, with the bonding load set to 24.52N, and the ultrasonic oscillator power scale set to 180FF, under the same conditions. The T is changed to 25 ms, 50 ms, 75 ms, 100 ms, 125 ms, and 150 ms, bonding is performed on the bonded object, the ribbon is peeled off, and the bonding trace is photographed. The bonding tool used had a tip width of 1.9 mm and a bond length of 0.6 mm.

図６を検討すると、突条ありでは、発振時間が長くなるにつれ、接合部の面積が次第に大きくなっていることが分かる。一方、突条なしでは、接合部の面積が発振時間と一定の関係にあるとは言い難く、接合部と、未だ接合されていない部分（特に接合面の中央部分）との境界がはっきりしていない。このような状況は、特にＴ＝２５ｍｓ，５０ｍｓ，７５ｍｓの短い発振時間において観察される。これらは、塑性変形が進まずに面同士が未だ接触しない部分が残存していること、または、面同士が接触したものの接触面に酸化膜が残留し、原子間結合がなされていないことによると考えられる。従って、本発明に係る接合面に突条を備えたリボンと比較して安定した接合強度を得られない。換言すれば、本発明に係る接合面に突条を備えたリボンは、従来技術によるリボンと比較して、より安定した接合強度を実現可能である。   Examining FIG. 6, it can be seen that with the protrusions, the area of the joint gradually increases as the oscillation time increases. On the other hand, without the protrusions, it is difficult to say that the area of the joint has a fixed relationship with the oscillation time, and the boundary between the joint and the part that has not yet been joined (particularly the central part of the joint surface) is clear. Absent. Such a situation is observed especially at short oscillation times of T = 25 ms, 50 ms, and 75 ms. According to the fact that the plastic deformation does not progress and there is still a part where the surfaces are not in contact with each other, or that the surfaces are in contact with each other but the oxide film remains on the contact surface and no interatomic bond is formed. Conceivable. Therefore, it is not possible to obtain a stable bonding strength as compared with a ribbon having protrusions on the bonding surface according to the present invention. In other words, the ribbon provided with protrusions on the joining surface according to the present invention can realize more stable joining strength as compared with the ribbon according to the prior art.

また、Ｔ＝１００ｍｓ以上の比較的長い発振時間においては、突条ありでは、接合部の面積が安定して確保されているのに対し、突条なしでは、接合部の中央部分に接合されていない部分が観察される。すなわち、本発明に係る接合面に突条を備えたリボンは、従来技術によるリボンと比較して、接合部の面積を大きく確保して、同等若しくは同等以上の接合強度を実現することができる。   In addition, in the relatively long oscillation time of T = 100 ms or more, the area of the joint portion is stably secured with the protrusions, whereas the joint portion is joined to the central portion of the joint portion without the protrusions. No part is observed. That is, the ribbon provided with protrusions on the joining surface according to the present invention can secure a large area of the joining portion and achieve the same or equivalent joining strength as compared with the ribbon according to the prior art.

第１実施形態によるボンディングリボンを示す斜視図である。It is a perspective view which shows the bonding ribbon by 1st Embodiment. 第１実施形態によるボンディングリボンを示す断面図である。It is sectional drawing which shows the bonding ribbon by 1st Embodiment. 第２実施形態によるボンディングリボンを示す断面図である。It is sectional drawing which shows the bonding ribbon by 2nd Embodiment. 第３実施形態によるボンディングリボンを示す図である。It is a figure which shows the bonding ribbon by 3rd Embodiment. 第４実施形態によるボンディング方法を実施する様子を示す斜視図である。It is a perspective view which shows a mode that the bonding method by 4th Embodiment is implemented. リボンの接合跡を表す写真である。It is the photograph showing the joining trace of a ribbon.

符号の説明Explanation of symbols

１，３，５，１０ リボン
２，４ 凸部
６ 突条
１１ 半導体装置
１２ ダイパッド
１３ 半導体チップ
１４ ボンディングパッド
１５ リード
２１ ボンディングヘッド
２２ ボンディングツール
２３ ワイヤガイド
２４ ワイヤクランプ
２５ カッタ 1, 3, 5, 10 Ribbon 2, 4 Protrusion 6 Projection 11 Semiconductor device 12 Die pad 13 Semiconductor chip 14 Bonding pad 15 Lead 21 Bonding head 22 Bonding tool 23 Wire guide 24 Wire clamp 25 Cutter

Claims (4)

超音波ボンディングに供されるボンディングリボンであって、頂部が略同一平面上にある複数の凸部を接合側の一方の面に備えたことを特徴とするボンディングリボン。   A bonding ribbon used for ultrasonic bonding, wherein a plurality of convex portions having apexes on substantially the same plane are provided on one surface on the bonding side. 前記凸部が長手方向に延在する突条であることを特徴とする請求項１に記載のボンディングリボン。   The bonding ribbon according to claim 1, wherein the convex portion is a ridge extending in the longitudinal direction. ２つの電極を接続するボンディング方法であって、
頂部が略同一平面上にある複数の凸部を接合側の一方の面に備えたリボンを用意する第１の過程と、
第１の電極の上面に、前記リボンを、前記接合面を下にしてボンディングツールにより超音波ボンディングする第２の工程と、
前記ボンディングツールが第２の電極の上面へ移動しながら前記リボンにループを形成する第３の工程と、
前記第２の電極の上面に、前記ループを形成したリボンを、前記接合面を下にして前記ボンディングツールにより超音波ボンディングする第４の工程と
を有することを特徴とするワイヤボンディング方法。 A bonding method for connecting two electrodes,
A first step of preparing a ribbon having a plurality of convex portions whose top portions are substantially on the same plane on one surface on the joining side;
A second step of ultrasonically bonding the ribbon on the upper surface of the first electrode with a bonding tool with the bonding surface down;
A third step of forming a loop in the ribbon while the bonding tool moves to the upper surface of the second electrode;
A wire bonding method comprising: a fourth step of ultrasonically bonding the ribbon having the loop formed on the upper surface of the second electrode with the bonding tool with the bonding surface down. 前記凸部が長手方向に延在する突条であることを特徴とする請求項３に記載のワイヤボンディング方法。   The wire bonding method according to claim 3, wherein the convex portion is a ridge extending in the longitudinal direction.
JP2006008842A 2006-01-17 2006-01-17 Bonding ribbon for power device and bonding method using the same Expired - Fee Related JP4612550B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006008842A JP4612550B2 (en) 2006-01-17 2006-01-17 Bonding ribbon for power device and bonding method using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006008842A JP4612550B2 (en) 2006-01-17 2006-01-17 Bonding ribbon for power device and bonding method using the same

Publications (2)

Publication Number Publication Date
JP2007194270A true JP2007194270A (en) 2007-08-02
JP4612550B2 JP4612550B2 (en) 2011-01-12

Family

ID=38449751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006008842A Expired - Fee Related JP4612550B2 (en) 2006-01-17 2006-01-17 Bonding ribbon for power device and bonding method using the same

Country Status (1)

Country Link
JP (1) JP4612550B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010016306A1 (en) * 2008-08-05 2010-02-11 田中電子工業株式会社 Aluminum ribbon for ultrasonic bonding
WO2011033566A1 (en) * 2009-09-17 2011-03-24 パナソニック株式会社 Semiconductor device and method for manufacturing same
JP2011114124A (en) * 2009-11-26 2011-06-09 Tanaka Electronics Ind Co Ltd Aluminum ribbon for ultrasonic bonding
JP2011520276A (en) * 2008-05-09 2011-07-14 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング Electrical bonding connection structure
JP2014179443A (en) * 2013-03-14 2014-09-25 Denso Corp Semiconductor device and manufacturing method of the same
EP2887448A1 (en) * 2013-12-20 2015-06-24 Thales Microwave interconnection device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283487A (en) * 1992-04-03 1993-10-29 Mitsubishi Electric Corp Wiring for high-frequency signal and bonding device therefor
JPH08111436A (en) * 1994-10-06 1996-04-30 Advantest Corp Mesh pattern ribbon for wiring
JP2000183099A (en) * 1998-12-16 2000-06-30 Nippon Telegr & Teleph Corp <Ntt> Ribbon for bonding
JP2001274206A (en) * 2000-03-23 2001-10-05 Nec Corp Connection conductor for semiconductor package, semiconductor package, and assembly method of semiconductor package
JP2005183495A (en) * 2003-12-17 2005-07-07 Hitachi Ltd Power conversion apparatus
JP2005259880A (en) * 2004-03-10 2005-09-22 Fuji Electric Holdings Co Ltd Semiconductor device
JP2006196629A (en) * 2005-01-13 2006-07-27 Nec Electronics Corp Semiconductor device, bonding method, and bonding ribbon

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283487A (en) * 1992-04-03 1993-10-29 Mitsubishi Electric Corp Wiring for high-frequency signal and bonding device therefor
JPH08111436A (en) * 1994-10-06 1996-04-30 Advantest Corp Mesh pattern ribbon for wiring
JP2000183099A (en) * 1998-12-16 2000-06-30 Nippon Telegr & Teleph Corp <Ntt> Ribbon for bonding
JP2001274206A (en) * 2000-03-23 2001-10-05 Nec Corp Connection conductor for semiconductor package, semiconductor package, and assembly method of semiconductor package
JP2005183495A (en) * 2003-12-17 2005-07-07 Hitachi Ltd Power conversion apparatus
JP2005259880A (en) * 2004-03-10 2005-09-22 Fuji Electric Holdings Co Ltd Semiconductor device
JP2006196629A (en) * 2005-01-13 2006-07-27 Nec Electronics Corp Semiconductor device, bonding method, and bonding ribbon

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011520276A (en) * 2008-05-09 2011-07-14 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング Electrical bonding connection structure
WO2010016306A1 (en) * 2008-08-05 2010-02-11 田中電子工業株式会社 Aluminum ribbon for ultrasonic bonding
JP5535077B2 (en) * 2009-09-17 2014-07-02 パナソニック株式会社 Semiconductor device and manufacturing method thereof
US8378468B2 (en) 2009-09-17 2013-02-19 Panasonic Corporation Semiconductor device and method of manufacturing the same
WO2011033566A1 (en) * 2009-09-17 2011-03-24 パナソニック株式会社 Semiconductor device and method for manufacturing same
JP2011114124A (en) * 2009-11-26 2011-06-09 Tanaka Electronics Ind Co Ltd Aluminum ribbon for ultrasonic bonding
CN102326242A (en) * 2009-11-26 2012-01-18 田中电子工业株式会社 Aluminum strip is used in ultrasonic bonding
JP2014179443A (en) * 2013-03-14 2014-09-25 Denso Corp Semiconductor device and manufacturing method of the same
EP2887448A1 (en) * 2013-12-20 2015-06-24 Thales Microwave interconnection device
FR3015781A1 (en) * 2013-12-20 2015-06-26 Thales Sa HYPERFREQUENCY INTERCONNECTION DEVICE
KR20150073116A (en) * 2013-12-20 2015-06-30 탈레스 Hyperfrequency interconnection device
US9232631B2 (en) 2013-12-20 2016-01-05 Thales Hyperfrequency interconnection device
KR102197980B1 (en) 2013-12-20 2021-01-04 탈레스 Hyperfrequency interconnection device

Also Published As

Publication number Publication date
JP4612550B2 (en) 2011-01-12

Similar Documents

Publication Publication Date Title
CN107615464B (en) Method for manufacturing power semiconductor device and power semiconductor device
JP4612550B2 (en) Bonding ribbon for power device and bonding method using the same
JP6448388B2 (en) Power semiconductor device
JP2008117825A (en) Power semiconductor device
JP6366723B2 (en) Semiconductor device and manufacturing method thereof
JP2009010064A (en) Semiconductor device and wire bonding method
JP5819052B2 (en) Semiconductor device and manufacturing method of semiconductor device
JP2001274206A (en) Connection conductor for semiconductor package, semiconductor package, and assembly method of semiconductor package
JP2009049272A (en) Semiconductor device, and its manufacturing method
JP5295146B2 (en) Power semiconductor device and manufacturing method thereof
JP5916651B2 (en) Method for manufacturing power semiconductor device
JP5433526B2 (en) Electronic device and manufacturing method thereof
JP2003045920A (en) Power semiconductor device and method for manufacturing the same
JP2010251374A (en) Semiconductor device and method of manufacturing the same
US7560809B2 (en) Semiconductor device
JP2008016469A (en) Semiconductor device
JP2007067342A (en) Method of bonding wire and wire bonding apparatus
KR100326957B1 (en) Semiconductor device and equipment for manufacturing the same as well as method of fabricating the same
JP4526957B2 (en) Semiconductor device, bonding method and bonding ribbon
JP2006196765A (en) Semiconductor device
WO2012053131A1 (en) Semiconductor device, and manufacturing method for same
JP7426954B2 (en) Semiconductor device and semiconductor device manufacturing method
JP2005019948A (en) Lead frame and electronic component using it
JP2010073747A (en) Wire bonding method and semiconductor device
JP2011003631A (en) Power semiconductor device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070927

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090929

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091006

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091127

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100810

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100830

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100921

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101015

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131022

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees