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JP2006100755A - Substrate processing equipment and electric heater for substrate processing equipment, and substrate processing equipment equipped with this - Google Patents

Substrate processing equipment and electric heater for substrate processing equipment, and substrate processing equipment equipped with this Download PDF

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Publication number
JP2006100755A
JP2006100755A JP2004305544A JP2004305544A JP2006100755A JP 2006100755 A JP2006100755 A JP 2006100755A JP 2004305544 A JP2004305544 A JP 2004305544A JP 2004305544 A JP2004305544 A JP 2004305544A JP 2006100755 A JP2006100755 A JP 2006100755A
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heating element
substrate processing
electric heater
processing apparatus
heating
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JP2004305544A
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JP4885438B2 (en
JP2006100755A5 (en
Inventor
Toshimitsu Miyata
敏光 宮田
Akira Morohashi
明 諸橋
Kimio Kitamura
公男 北村
Kenji Tanaka
健司 田中
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Hitachi Kokusai Electric Inc
Teitokusha Co Ltd
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Hitachi Kokusai Electric Inc
Teitokusha Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To make a heating element long in life by suppressing a generation of heat strain of a heating element, and by preventing the heating element from contacting with each other and with a structure of liner tube or the like simultaneously in a substrate processing equipment and an electric heater for the substrate processing equipment. <P>SOLUTION: The equipment comprises a processing chamber processing by housing a substrate 12, and a heating arrangement 2, having a heating element 43, heating inside of the processing chamber with the heating element. The heating element is held in only one end by a holding portion. And, the heating element is formed so that at least one portion may be profiled in convex toward the substrate. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明はシリコンウェーハ、ガラス基板等の基板に半導体装置を製造する基板処理装置並びに基板処理装置用電気ヒーター及びこれを備えた基板処理装置に関するものである。   The present invention relates to a substrate processing apparatus for manufacturing a semiconductor device on a substrate such as a silicon wafer and a glass substrate, an electric heater for the substrate processing apparatus, and a substrate processing apparatus including the same.

半導体装置を製造する装置に、シリコンウェーハ、ガラス基板等の基板に薄膜の生成、アニール処理、不純物の拡散、エッチング等の処理を行う基板処理装置があり、基板処理装置としては基板を1枚、或は複数枚処理する枚葉式の基板処理装置、所定枚数を一度に処理するバッチ式の基板処理装置がある。又、バッチ式の基板処理装置としては縦型炉を有する縦型の基板処理装置、或は横型炉を有する横型の基板処理装置がある。   As a device for manufacturing a semiconductor device, there is a substrate processing apparatus that performs processing such as generation of a thin film, annealing treatment, impurity diffusion, etching, etc. on a substrate such as a silicon wafer, a glass substrate, etc. Alternatively, there are a single-wafer type substrate processing apparatus that processes a plurality of sheets and a batch type substrate processing apparatus that processes a predetermined number of sheets at a time. As a batch type substrate processing apparatus, there is a vertical substrate processing apparatus having a vertical furnace or a horizontal substrate processing apparatus having a horizontal furnace.

以下、従来の基板処理装置として縦型炉を有するバッチ式の基板処理装置があり、例えば特許文献1に示されるものがある。図22に於いて、従来の基板処理装置の縦型炉1について説明する。
円筒状の加熱装置2、該加熱装置2内部に均熱管3、該均熱管3内部に反応管4が同心多重に設けられており、該反応管4にはボート5が装入される。該ボート5はウェーハ12を水平姿勢で多段に保持するものであり、ボートキャップ6を介してエレベータキャップ7に載置され、該エレベータキャップ7は図示しないボートエレベータに設けられ昇降可能である。
Hereinafter, there is a batch type substrate processing apparatus having a vertical furnace as a conventional substrate processing apparatus, for example, one disclosed in Patent Document 1. With reference to FIG. 22, a vertical furnace 1 of a conventional substrate processing apparatus will be described.
A cylindrical heating device 2, a soaking tube 3 inside the heating device 2, and reaction tubes 4 are provided concentrically inside the soaking tube 3, and a boat 5 is inserted into the reaction tube 4. The boat 5 holds wafers 12 in multiple stages in a horizontal posture, and is placed on an elevator cap 7 via a boat cap 6. The elevator cap 7 is provided on a boat elevator (not shown) and can be raised and lowered.

前記反応管4の上端にはガス導入管8が連通され、前記反応管4の下端には排気口9が設けられている。前記ガス導入管8の下端はガス供給管10と接続され、前記排気口9は排気管11と接続されている。   A gas introduction tube 8 is communicated with the upper end of the reaction tube 4, and an exhaust port 9 is provided at the lower end of the reaction tube 4. The lower end of the gas introduction pipe 8 is connected to a gas supply pipe 10, and the exhaust port 9 is connected to an exhaust pipe 11.

前記ボート5を前記反応管4より引出した状態で、所要枚数のウェーハ12を前記ボート5により保持し、前記ボートエレベータ(図示せず)により前記ボート5を上昇させ前記反応管4内に装入する。前記加熱装置2で前記反応管4内を所定の温度に加熱し、前記ガス供給管10、ガス導入管8より反応ガスを前記反応管4内に導入し、前記ウェーハ12表面に薄膜を生成し、反応後のガスは前記排気口9、排気管11を経て排気される。   With the boat 5 pulled out from the reaction tube 4, a required number of wafers 12 are held by the boat 5, and the boat 5 is raised by the boat elevator (not shown) and loaded into the reaction tube 4. To do. The inside of the reaction tube 4 is heated to a predetermined temperature by the heating device 2, a reaction gas is introduced into the reaction tube 4 through the gas supply tube 10 and the gas introduction tube 8, and a thin film is generated on the surface of the wafer 12. The gas after the reaction is exhausted through the exhaust port 9 and the exhaust pipe 11.

次に、図23?図25に於いて前記加熱装置2について説明する。
円筒形状の周囲断熱材15,16が前記反応管4と同心に設けられ、前記周囲断熱材15,16は天井断熱材17によって上端が閉塞されている。前記周囲断熱材15の外面は図示しないヒータケースにより覆われている。
Next, the heating device 2 will be described with reference to FIGS.
Cylindrical peripheral heat insulating materials 15 and 16 are provided concentrically with the reaction tube 4, and the upper ends of the peripheral heat insulating materials 15 and 16 are closed by a ceiling heat insulating material 17. The outer surface of the surrounding heat insulating material 15 is covered with a heater case (not shown).

前記周囲断熱材16の内壁の、円周所要等分した位置に鉛直方向に延びる保持部材18が設けられている。該保持部材18は、ハイアルミナ(アルミナ94.2%含有)製の保持ピース19が鉛直方向に多数個連結されたものであり、該保持ピース19と保持ピース19との間に保持孔22が形成され、該保持孔22には後述する発熱線21が挿通する様になっている。   A holding member 18 extending in the vertical direction is provided at a position of the inner wall of the surrounding heat insulating material 16 equally divided in the circumference. The holding member 18 includes a plurality of holding pieces 19 made of high alumina (containing 94.2% alumina) connected in the vertical direction, and holding holes 22 are formed between the holding pieces 19 and the holding pieces 19. A heating wire 21 to be described later is inserted into the holding hole 22.

前記均熱管3の周りを囲む様に発熱体である発熱線21が設けられ、該発熱線21は断面が円形でコイル状となっており、該発熱線21は前記保持孔22を挿通し、前記保持部材18により円周を所要等分した位置で支持されている。   A heating wire 21 that is a heating element is provided so as to surround the soaking tube 3, the heating wire 21 has a circular cross section and is coiled, and the heating wire 21 passes through the holding hole 22, The holding member 18 is supported at a position where the circumference is equally divided.

前記縦型炉1内で前記ウェーハ12に成膜処理中、前記発熱線21が発熱し膨脹することにより、該発熱線21のコイル直径が拡大し、前記保持部材18には前記縦型炉1の反中心方向に力が作用し、前記保持部材18は前記発熱線21と共に前記縦型炉1の反中心方向に移動する。又、前記周囲断熱材16も前記発熱線21の発熱の影響で高温となり膨脹する。   During the film forming process on the wafer 12 in the vertical furnace 1, the heating wire 21 generates heat and expands, so that the coil diameter of the heating wire 21 is expanded, and the holding member 18 has the vertical furnace 1. A force acts in the direction opposite to the center, and the holding member 18 moves together with the heating wire 21 in the direction opposite to the center of the vertical furnace 1. Further, the surrounding heat insulating material 16 also becomes hot and expands due to the heat generated by the heating wire 21.

成膜処理完了後、前記発熱線21が発熱を停止すると、該発熱線21の温度が降下し、コイルの直径が収縮することにより前記保持部材18には前記縦型炉1の中心方向の力が作用し、前記保持部材18は前記発熱線21と共に前記縦型炉1の中心方向に移動する。又、前記周囲断熱材16も前記発熱線21の温度降下の影響で温度が降下し収縮する。   When the heating wire 21 stops generating heat after the film formation process is completed, the temperature of the heating wire 21 drops and the diameter of the coil contracts, so that the holding member 18 has a force in the center direction of the vertical furnace 1. The holding member 18 moves in the central direction of the vertical furnace 1 together with the heating wire 21. Further, the surrounding heat insulating material 16 also shrinks due to the temperature drop due to the temperature drop of the heating wire 21.

前記縦型炉1内で前記ウェーハ12に成膜処理が施される度に、前記縦型炉1内は昇温、降温を繰返し、前記発熱線21、周囲断熱材16は前述した様に膨脹、収縮を繰返す。   Each time the wafer 12 is subjected to a film forming process in the vertical furnace 1, the temperature in the vertical furnace 1 is repeatedly raised and lowered, and the heating wire 21 and the surrounding heat insulating material 16 are expanded as described above. Repeat the contraction.

上記した従来の加熱装置では各保持ピース間の円周方向の相対変位は保持ピースの構造上規制されていないので、炉内の昇温、降温が繰返されることにより、発熱線、断熱材が膨脹、収縮を繰返し、保持ピースが前記断熱材より抜脱し、更に前記保持ピース間で円周方向の相対変位が生じて、各保持ピース間の連結が外れ、発熱線同士が接触し短絡事故が発生する虞れがある。   In the above-described conventional heating apparatus, the relative displacement in the circumferential direction between the holding pieces is not restricted due to the structure of the holding pieces, so that the heating wire and the heat insulating material are expanded by repeatedly raising and lowering the temperature in the furnace. , Repeated shrinkage, the holding piece is pulled out from the heat insulating material, and the relative displacement in the circumferential direction occurs between the holding pieces, the connection between the holding pieces is disconnected, the heating wires come into contact with each other, and a short circuit accident occurs There is a risk of doing.

又、発熱線の拡大、収縮により発熱線が保持ピースと共に縦型炉の半径方向に移動し、或は熱歪みで不規則に変形し、変形が円周方向の場合は発熱線同士が接触する虞れがあり、或は変形が半径方向の場合は前記発熱線が導電性のある均熱管と接触する虞れがある。
特開平11?67424号公報
Also, due to the expansion and contraction of the heating wire, the heating wire moves with the holding piece in the radial direction of the vertical furnace, or deforms irregularly due to thermal strain, and when the deformation is in the circumferential direction, the heating wires contact each other. If the deformation is in the radial direction, the heating wire may come into contact with the conductive soaking tube.
JP 11-67424 A

斯かる実情に鑑み、本発明の第一の目的は、発熱線の熱歪みの発生を抑止し、又発熱線間或は発熱線の均熱管等構造物への接触を防止して、発熱線の長寿命化を図ることにある。   In view of such circumstances, the first object of the present invention is to suppress the generation of thermal distortion of the heating wires, and prevent the heating wires from contacting the heating wires or structures such as the soaking tubes. The purpose is to extend the service life.

また、本発明の第二の目的は、より均一な加熱を行うことの可能な基板処理装置用電気ヒーター及びこれを備えた基板処理装置を提供することにある。 本発明の第三の目的は、発熱体を確実に支持することの可能な基板処理装置用電気ヒーター及びこれを備えた基板処理装置を提供することにある。   A second object of the present invention is to provide an electric heater for a substrate processing apparatus capable of performing more uniform heating and a substrate processing apparatus provided with the same. A third object of the present invention is to provide an electric heater for a substrate processing apparatus capable of reliably supporting a heating element and a substrate processing apparatus having the same.

第一の目的を達成するため、本発明は、基板を収納し処理する処理室と、発熱体を有し該発熱体により前記処理室内を加熱する加熱装置とを具備し、前記発熱体は一端のみを保持部によって保持され、少なくとも一部が前記基板に向かって凸となる様に形成された基板処理装置に係るものである。   In order to achieve the first object, the present invention includes a processing chamber for storing and processing a substrate, and a heating device that has a heating element and heats the processing chamber by the heating element. Only the substrate is held by the holding unit, and the substrate processing apparatus is formed so that at least a part thereof is convex toward the substrate.

上記第二、第三の目的を達成するため、本発明に係る基板処理装置用電気ヒーターの特徴は、蛇行状発熱体の上側端を支持体に固定し、前記発熱体の下側端を上下方向に移動自在な状態とし、これら上側端と下側端とを近接させ、同発熱体の中間部を絶縁体から離隔させたことにある。上側端と下側端とを近接させてあるので、発熱体間の距離が開かずにより均一な加熱が可能となる。この場合、前記発熱体の前記上側端よりも前記下側端を前記絶縁体から離隔させることが望ましい。   In order to achieve the second and third objects, the electric heater for a substrate processing apparatus according to the present invention is characterized in that the upper end of the serpentine heating element is fixed to a support and the lower end of the heating element is moved up and down. The upper end and the lower end are brought close to each other and the intermediate portion of the heating element is separated from the insulator. Since the upper end and the lower end are close to each other, the distance between the heating elements is not increased, and more uniform heating is possible. In this case, it is desirable to separate the lower end from the insulator rather than the upper end of the heating element.

発熱体を固定するに際しては、前記発熱体の上側端に折曲部を形成してこの折曲部を支持体に掛止するとよい。この場合、前記折曲部が略直角に折り曲げられ、前記支持体の掛止部もこの折曲部を受け入れる略直角に形成すればよい。例えば、前記掛止部は折曲部が掛止される下壁部と下壁部に略平行で折曲部の上側への抜けを防止する上壁部と折曲部の水平方向への脱落を防止するための上壁部から垂下する横壁部とを備え、下壁部は上壁部及び横壁部とは分割可能である。   When fixing the heating element, a bent portion may be formed on the upper end of the heating element, and the bent portion may be hooked on the support. In this case, the bent portion may be bent at a substantially right angle, and the hooking portion of the support may be formed at a substantially right angle for receiving the bent portion. For example, the latching portion is substantially parallel to the lower wall portion and the lower wall portion on which the bent portion is hooked, and the upper wall portion and the bent portion are prevented from falling off in the horizontal direction to prevent the bent portion from being pulled upward. And a horizontal wall portion that hangs down from the upper wall portion, so that the lower wall portion can be divided into the upper wall portion and the horizontal wall portion.

前記発熱体の上解放スリットにおける前記折曲部にこの上解放スリット間での発熱体の短絡を防ぐ第一絶縁片を介在させてもよい。
発熱体を他の手段で固定するには、前記発熱体の上側端を固定するための前記支持体を、前記発熱体の下解放スリットを貫通させてもよい。この場合、前記支持体が前記発熱体と前記絶縁体との間に介在する絶縁片を貫通する。
A first insulating piece for preventing a short circuit of the heating element between the upper release slits may be interposed in the bent portion of the upper release slit of the heating element.
In order to fix the heating element by other means, the support for fixing the upper end of the heating element may be passed through the lower release slit of the heating element. In this case, the support passes through an insulating piece interposed between the heating element and the insulator.

前記発熱体の下端側は下固定体(ピン)をスリットに貫通させ、スリット長手方向に移動自在で且つスリット垂直方向の移動を規制する状態で絶縁体に保持してもよい。   The lower end side of the heating element may be held by an insulator in such a manner that a lower fixing body (pin) passes through the slit and is movable in the slit longitudinal direction and restricted in the movement in the slit vertical direction.

上記各特徴において、下側の発熱体の上端を支持する支持体に上側の発熱体の下端を水平方向視で重ねるとよい。また、発熱体の上端と下端との間に放熱側に対するオフセット距離を設けながら、発熱体の一部を垂下させるように発熱体の上部側に湾曲部を形成してもよい。さらに、発熱体の上下方向中間部を絶縁体とは反対側に突出するよう湾曲させてもよい。
上記いずれかの特徴に記載の電気ヒーターはこれを備えた基板処理装置として実施することができる。
In each of the above features, the lower end of the upper heating element may be overlapped with the support supporting the upper end of the lower heating element in the horizontal direction. In addition, a curved portion may be formed on the upper side of the heating element so that a part of the heating element is suspended while providing an offset distance with respect to the heat dissipation side between the upper end and the lower end of the heating element. Furthermore, you may curve so that the intermediate part of the up-down direction of a heat generating body may protrude on the opposite side to an insulator.
The electric heater described in any of the above features can be implemented as a substrate processing apparatus including the electric heater.

本発明によれば、基板を収納し処理する処理室と、発熱体を有し該発熱体により前記処理室内を加熱する加熱装置とを具備し、前記発熱体は一端のみを保持部によって保持され、少なくとも一部が前記基板に向かって凸となる様に形成されたので、発熱体が高温となり強度が低下した場合も、座屈現象が防止され、又発熱体が熱膨張した場合は発熱体の凸形状により変形が基板側に誘導され、又熱収縮した場合は変形が凸形状によって吸収されるので、発熱体に於ける熱歪みの発生が抑制され、発熱体間或は発熱体の均熱管等構造物への接触を防止して、発熱体の長寿命化を図ることができる等の優れた効果を発揮する。   According to the present invention, there is provided a processing chamber for storing and processing a substrate, and a heating device that has a heating element and heats the processing chamber by the heating element, and the heating element is held only at one end by the holding portion. Since at least a portion is formed to be convex toward the substrate, the buckling phenomenon is prevented even when the heating element becomes hot and the strength is reduced, and when the heating element is thermally expanded, the heating element Due to the convex shape, deformation is induced to the substrate side, and when the heat shrinks, the deformation is absorbed by the convex shape, so that the generation of thermal distortion in the heating elements is suppressed and the heating elements are uniform or between the heating elements. It exhibits excellent effects such as preventing contact with a structure such as a heat tube and extending the life of the heating element.

一方、上記本発明に係る基板処理装置用電気ヒーター及びこれを備えた基板処理装置の特徴によれば、上側端と下側端とを近接させてあるので、加熱が均一に行える。また、同発熱体の中間部を絶縁体から離隔させてあるので、放熱効率が良く均一な加熱が可能となる。しかも、上側端を固定し、下側端は自由であるので、熱膨張や変形が発生しても脱落の恐れがなくて確実に支持でき、組み付け精度も要せずに安価に製造が可能である。
本発明の他の目的、構成及び効果については以下に示す発明の実施の形態の項で明らかになるであろう。
On the other hand, according to the characteristics of the electric heater for a substrate processing apparatus and the substrate processing apparatus provided with the same according to the present invention, the upper end and the lower end are close to each other, so that heating can be performed uniformly. Further, since the intermediate portion of the heating element is separated from the insulator, the heat dissipation efficiency is good and uniform heating is possible. In addition, the upper end is fixed and the lower end is free, so there is no risk of dropout even if thermal expansion or deformation occurs, and it can be reliably supported and can be manufactured at low cost without requiring assembly accuracy. is there.
Other objects, configurations, and effects of the present invention will become apparent from the following embodiments of the present invention.

以下、図面を参照しつつ本発明を実施する為の最良の形態を説明する。
先ず、図1に於いて本発明に係る基板処理装置の概略を説明する。尚、図1中、図5中と同符号で示すものは、同等のものを示す。
The best mode for carrying out the present invention will be described below with reference to the drawings.
First, an outline of a substrate processing apparatus according to the present invention will be described with reference to FIG. In FIG. 1, the same reference numerals as those in FIG.

円筒状の加熱装置2の内部に均熱管3、更に反応管4が同心に設けられ、該反応管4内に処理室が形成され、該処理室にはウェーハ12を水平多段に保持するボート5が収納され、該ボート5は図示しないボートエレベータにより、装入、引出し可能である。   A soaking tube 3 and a reaction tube 4 are provided concentrically inside the cylindrical heating device 2, and a processing chamber is formed in the reaction tube 4, and a boat 5 for holding wafers 12 in a horizontal multistage in the processing chamber. The boat 5 can be loaded and withdrawn by a boat elevator (not shown).

前記反応管4内には反応ガス導入管31及び排気管32が連通され、前記反応ガス導入管31には流量制御器33が設けられ、前記排気管32には圧力制御器34が設けられ、反応ガスが所定流量で導入されると共に前記反応管4内が所定圧力に維持される様に、排気ガスが排出される様になっている。尚、前記ボート5、ボートエレベータ等は上記した従来の基板処理装置と同様であり説明を省略する。   A reaction gas introduction pipe 31 and an exhaust pipe 32 are communicated in the reaction pipe 4, a flow rate controller 33 is provided in the reaction gas introduction pipe 31, and a pressure controller 34 is provided in the exhaust pipe 32, The exhaust gas is discharged so that the reaction gas is introduced at a predetermined flow rate and the inside of the reaction tube 4 is maintained at a predetermined pressure. The boat 5, the boat elevator and the like are the same as those of the conventional substrate processing apparatus described above, and a description thereof is omitted.

前記加熱装置2は、発熱部25と、該発熱部25を囲繞し該発熱部25との間に円筒空間24を形成するヒータケース26とから構成され、該ヒータケース26は外側断熱部として機能し、該ヒータケース26と前記発熱部25の上端に天井部27が設けられ、該天井部27には下面と側面に開口するエルボ状の排気導路28が形成されている。   The heating device 2 includes a heat generating part 25 and a heater case 26 that surrounds the heat generating part 25 and forms a cylindrical space 24 between the heat generating part 25, and the heater case 26 functions as an outer heat insulating part. A ceiling portion 27 is provided at the upper ends of the heater case 26 and the heat generating portion 25, and an elbow-shaped exhaust conduit 28 that opens to the lower surface and the side surface is formed in the ceiling portion 27.

該排気導路28には強制排気を行う排気ブロア(図示せず)を具備した強制排気ラインが接続されている。
前記発熱部25の下部を囲繞する様に冷却ガス導入ダクト36が設けられ、該冷却ガス導入ダクト36は前記円筒空間24に連通している。
A forced exhaust line having an exhaust blower (not shown) that performs forced exhaust is connected to the exhaust conduit 28.
A cooling gas introduction duct 36 is provided so as to surround the lower portion of the heat generating portion 25, and the cooling gas introduction duct 36 communicates with the cylindrical space 24.

冷却ガス供給ライン37が前記冷却ガス導入ダクト36に連通され、冷却ガス供給ライン38が前記均熱管3と前記反応管4との間に形成される均熱管内空間39に連通され、前記冷却ガス供給ライン37,38にはそれぞれエアバルブ40,41が設けられている。   A cooling gas supply line 37 is communicated with the cooling gas introduction duct 36, and a cooling gas supply line 38 is communicated with a soaking tube inner space 39 formed between the soaking tube 3 and the reaction tube 4. Air valves 40 and 41 are provided in the supply lines 37 and 38, respectively.

前記ヒータケース26は、金属製のヒータカバー55及び円筒状の外層断熱体42から構成されている。又、前記発熱部25は発熱体43及び該発熱体43を支持する内層断熱体45等から構成され、該内層断熱体45の内面全体に亘り前記発熱体43が設けられている。前記発熱部25には、前記内層断熱体45を貫通するガス吹出し孔46が所要の分布で多数穿設され、前記発熱部25と前記均熱管3との間に形成される炉内空間35と前記円筒空間24とを連通している。   The heater case 26 includes a metal heater cover 55 and a cylindrical outer heat insulator 42. The heat generating portion 25 includes a heat generating body 43 and an inner layer heat insulating body 45 that supports the heat generating body 43, and the heat generating body 43 is provided over the entire inner surface of the inner layer heat insulating body 45. A large number of gas blowing holes 46 penetrating the inner layer insulator 45 are formed in the heat generating part 25 in a required distribution, and a furnace space 35 formed between the heat generating part 25 and the heat equalizing tube 3. It communicates with the cylindrical space 24.

前記外層断熱体42、内層断熱体45の材質としては、例えばアルミナ(酸化アルミニウム:Al2 3 )とシリカ(SiO2 )を主成分としている。又、前記発熱体43には急速加熱が可能である発熱材料、例えばFe?Al?Cr合金が用いられ、発熱表面積が大きくなる様に、断面は平板形状等の形状が採用される。 As materials of the outer layer heat insulator 42 and the inner layer heat insulator 45, for example, alumina (aluminum oxide: Al 2 O 3 ) and silica (SiO 2 ) are used as main components. The heating element 43 is made of a heat-generating material that can be rapidly heated, for example, an Fe-Al-Cr alloy, and the cross section has a flat plate shape or the like so as to increase the heat-generating surface area.

前記発熱部25は、後述する様に複数段の発熱段部57が積上げられて構成され、各段の発熱段部57毎に前記発熱体43が設けられている。 該発熱体43は、後述する様に前記加熱装置2の軸心方向に所要のゾーンに区分けされ、ゾーン制御が可能となっており、各ゾーンには各ゾーンの加熱温度を検出するヒータ温度検出器52が設けられている。又、前記発熱体43は各ゾーンの成形パターンを同じにすることにより、発熱量を各ゾーンとも均一にする様にしてもよい。   As will be described later, the heat generating portion 25 is configured by stacking a plurality of heat generating step portions 57, and the heat generating body 43 is provided for each heat generating step portion 57. As will be described later, the heating element 43 is divided into necessary zones in the axial direction of the heating device 2, and zone control is possible. In each zone, heater temperature detection for detecting the heating temperature of each zone is possible. A vessel 52 is provided. Further, the heating element 43 may have the same heating pattern in each zone by making the molding pattern of each zone the same.

前記反応管4内で処理される前記ウェーハ12の処理状態は主制御部47によって制御される。該主制御部47は、炉内の温度を制御する温度制御部48、処理ガスの流量、冷却ガスの流量を制御するガス流量制御部49、前記反応管4内の圧力を制御する圧力制御部50、前記ボートエレベータ等の機構部を制御する駆動制御部51を備えている。   The processing state of the wafer 12 processed in the reaction tube 4 is controlled by the main controller 47. The main control unit 47 includes a temperature control unit 48 for controlling the temperature in the furnace, a gas flow rate control unit 49 for controlling the flow rate of the processing gas and the cooling gas, and a pressure control unit for controlling the pressure in the reaction tube 4. 50. A drive control unit 51 for controlling a mechanism unit such as the boat elevator is provided.

前記反応管4の内面に沿って炉内温度検出器53が立設され、該炉内温度検出器53で検出された炉内検出温度、前記ヒータ温度検出器52が検出したヒータ温度は、前記温度制御部48に入力される。前記エアバルブ40,41の開閉が前記ガス流量制御部49により制御されると共に該ガス流量制御部49は前記流量制御器33によりガス導入量を制御し、前記圧力制御部50は前記圧力制御器34を介して排気圧力を制御し、前記反応管4内の圧力を制御している。   A furnace temperature detector 53 is erected along the inner surface of the reaction tube 4. The furnace temperature detected by the furnace temperature detector 53 and the heater temperature detected by the heater temperature detector 52 are as follows. Input to the temperature control unit 48. The opening and closing of the air valves 40 and 41 are controlled by the gas flow rate control unit 49, the gas flow rate control unit 49 controls the gas introduction amount by the flow rate controller 33, and the pressure control unit 50 is controlled by the pressure controller 34. The exhaust pressure is controlled via the pressure to control the pressure in the reaction tube 4.

前記発熱部25について説明する。
前記内層断熱体45は短円筒状の絶縁体である断熱部材56(図2参照)が同心に所要段積上げられて構成され、各段毎に断熱部材56の内壁面を覆う様に前記発熱体43が設けられている。後述する様に、各段毎の発熱体43は加熱制御されており、該発熱体43と前記断熱部材56とにより発熱段部57を構成し、前記発熱部25は前記発熱段部57を同心に所要段積上げたものとなっている。
The heat generating part 25 will be described.
The inner-layer heat insulator 45 is configured by concentrically stacking required steps of a heat insulating member 56 (see FIG. 2), which is a short cylindrical insulator, and covers the inner wall surface of the heat insulating member 56 for each step. 43 is provided. As will be described later, the heating element 43 for each stage is controlled by heating, and the heating element 43 and the heat insulating member 56 constitute a heating stage part 57, and the heating part 25 concentrics the heating stage part 57. It has become a required stacking.

図2、図3により該発熱段部57について更に説明する。
図2は、最下段の該発熱段部57を示しており、図2、図3中、58は断熱材であるリング形状の断熱部ベースを示し、該断熱部ベース58に前記外層断熱体42、内層断熱体45が載設されている。
The heat generating step portion 57 will be further described with reference to FIGS.
FIG. 2 shows the lowermost heat generating step portion 57. In FIGS. 2 and 3, 58 indicates a ring-shaped heat insulating portion base as a heat insulating material, and the outer-layer heat insulating body 42 is provided on the heat insulating portion base 58. The inner-layer heat insulator 45 is mounted.

前記断熱部材56の下端、上端にはそれぞれヒータ保持部である支持体59,59が配設され、該ヒータ保持部59は更に下保持部材61、該下保持部材61に重合される上保持部材62により構成される。   Support members 59 and 59, which are heater holding portions, are disposed at the lower and upper ends of the heat insulating member 56, respectively. The heater holding portion 59 is further provided with a lower holding member 61 and an upper holding member that is superposed on the lower holding member 61. 62.

前記下保持部材61は、リング板形状をしており、外径は前記断熱部材56と合致しており、内径は前記断熱部材56に対して小径であり、内端部(基板側端部、図1参照)が内側に向かって庇状に突出している。   The lower holding member 61 has a ring plate shape, an outer diameter matches the heat insulating member 56, an inner diameter is smaller than the heat insulating member 56, and an inner end (substrate side end, 1) protrudes in a bowl shape toward the inside.

前記上保持部材62は、リング板形状をしており、外径は前記断熱部材56と合致しており、内径は前記下保持部材61に対して小径であり、内端部は前記下保持部材61より内側に向かって庇状に突出し、前記上保持部材62の内端には下側に突出する突条63が形成され、前記上保持部材62の内端部は鉤形状となっている。   The upper holding member 62 has a ring plate shape, an outer diameter matches the heat insulating member 56, an inner diameter is smaller than the lower holding member 61, and an inner end portion is the lower holding member. A protrusion 63 is formed on the inner end of the upper holding member 62 and protrudes downward. The inner end of the upper holding member 62 has a hook shape.

該上保持部材62と前記突条63との間には、内側に向かって開放された断面鉤状の発熱体保持溝64がリング状に形成され、該発熱体保持溝64に前記発熱体43の折曲部43aが保持される様になっている。該折曲部43aと前記発熱体保持溝64とは上下方向、半径方向ともに適宜な遊びが形成され、又前記突条63は前記折曲部43aが中心側に抜脱する事を抑止している。   Between the upper holding member 62 and the protrusion 63, a heating element holding groove 64 having a bowl-shaped cross-section opened inward is formed in a ring shape, and the heating element 43 is formed in the heating element holding groove 64. The bent portion 43a is held. The bent portion 43a and the heating element holding groove 64 are formed with appropriate play in both the vertical direction and the radial direction, and the protrusion 63 prevents the bent portion 43a from being pulled out to the center side. Yes.

前記発熱体43について図4を参照して説明する。
該発熱体43の展開形状は、帯板に所定ピッチで該帯板の両幅縁から交互にスリット65a,65bが刻設された、葛折り形状となっている。前記帯板の上端部である折曲部43aが外側に向かって直角よりやや大きい鈍角で水平方向に折曲げられ、該折曲部43aは前記下保持部材61と前記上保持部材62間に挾持されている。
The heating element 43 will be described with reference to FIG.
The developed shape of the heating element 43 is a twisted shape in which slits 65a and 65b are alternately engraved on both sides of the strip at a predetermined pitch. The bent portion 43a which is the upper end portion of the band plate is bent in the horizontal direction at an obtuse angle slightly larger than a right angle toward the outside, and the bent portion 43a is sandwiched between the lower holding member 61 and the upper holding member 62. Has been.

前記発熱体43の本体部43bは、前記断熱部材56に沿って垂下され、下側のヒータ保持部59の上保持部材62内端に当接しており、前記本体部43bの下端は拘束されてなく、自由状態となっている。又、該本体部43bは中心側に向かって凸状に湾曲、又は鈍角に屈曲されている。尚、前記本体部43bの一部が、中心側に向かって凸状に湾曲、又は鈍角に屈曲されたものであってもよい。   A main body portion 43b of the heating element 43 is suspended along the heat insulating member 56, is in contact with the inner end of the upper holding member 62 of the lower heater holding portion 59, and the lower end of the main body portion 43b is restrained. There is no free state. The main body 43b is curved convexly toward the center or bent at an obtuse angle. It should be noted that a part of the main body 43b may be convexly curved toward the center side or bent at an obtuse angle.

前記発熱段部57を上下に積上げた状態では、上側発熱段部57の発熱体43の下端が、前記上保持部材62の内端に当接ないし、近接しており、下側の発熱段部57の発熱体43の上端に対して少なくとも前記突条63分だけ間隙が形成されるので、上側の発熱体43の下端と下側の発熱体43の上端とを隙間を明けることなく或はオーバラップする様に設けることができ、又上側の発熱体43が熱膨張で下側に伸長しても下側の発熱体43に接触することはない。   In the state where the heat generating stepped portion 57 is stacked up and down, the lower end of the heating element 43 of the upper heat generating stepped portion 57 is not in contact with or close to the inner end of the upper holding member 62, and the lower heat generating stepped portion Since the gap is formed at least by the protrusion 63 with respect to the upper end of the heating element 43 of 57, the lower end of the upper heating element 43 and the upper end of the lower heating element 43 are not opened or overfilled. Even if the upper heating element 43 extends downward due to thermal expansion, it does not come into contact with the lower heating element 43.

前記発熱体43は前記断熱部材56の内壁面に沿って湾曲され、全体形状としては該断熱部材56と同心で略円筒形状となっており、図5に示すように、前記発熱体43の始端と終端との両端間には隙間が形成され、該発熱体43が周方向に膨張した場合も両端が接触しない様になっており、又前記発熱体43の両端の端子43x、43yには前記温度制御部48が接続され、前記発熱体43と前記温度制御部48との接続部は、両端が変位可能な様にフレキシブルな接続となっている。前記発熱段部57の発熱体43毎に独立して前記温度制御部48によって温度制御される様になっている。   The heating element 43 is curved along the inner wall surface of the heat insulating member 56, and has a substantially cylindrical shape concentric with the heat insulating member 56 as a whole, and as shown in FIG. A gap is formed between both ends of the heat generating element 43 so that both ends do not come into contact with each other even when the heat generating element 43 expands in the circumferential direction. A temperature control unit 48 is connected, and the connection between the heating element 43 and the temperature control unit 48 is a flexible connection so that both ends can be displaced. The temperature is controlled by the temperature controller 48 independently for each heating element 43 of the heating stage 57.

以下、作用について説明する。
前記ウェーハ12の処理は、該ウェーハ12が装填された前記ボート5がボートエレベータ(図示せず)により前記反応管4に装入され、前記加熱装置2の加熱により所定温度迄急速加熱される。該加熱装置2により前記ウェーハ12を所定温度に加熱した状態で前記反応ガス導入管31より反応ガスが導入され、前記排気管32を介して排気ガスが排出され、前記ウェーハ12に所要の熱処理がなされる。
The operation will be described below.
In the processing of the wafer 12, the boat 5 loaded with the wafer 12 is loaded into the reaction tube 4 by a boat elevator (not shown) and rapidly heated to a predetermined temperature by the heating device 2. While the wafer 12 is heated to a predetermined temperature by the heating device 2, a reaction gas is introduced from the reaction gas introduction pipe 31, exhaust gas is exhausted through the exhaust pipe 32, and a necessary heat treatment is performed on the wafer 12. Made.

通常、前記ボート5の装入前は所要の温度、例えば550℃に保温しておき、該ボート5が装入された後はウェーハ処理温度、例えば850℃迄昇温保持される。尚、装入前の温度、処理温度は基板処理装置での処理内容に応じて適切な温度が選択される。   Usually, the temperature of the boat 5 is kept at a required temperature, for example, 550 ° C. before the boat 5 is charged, and after the boat 5 is charged, the temperature is raised to a wafer processing temperature, for example, 850 ° C. In addition, the temperature before loading and the processing temperature are appropriately selected according to the processing content in the substrate processing apparatus.

前記発熱部25の各段の発熱段部57は前記温度制御部48によって独立したゾーンとして温度制御され、又各段の発熱段部57の発熱体43は連続した1つの発熱体であるので、該発熱体43に異常があった場合、例えば断線があった場合も直ちに発見でき、各段の発熱体の劣化状態も容易に把握することができる。   The heating stage 57 of each stage of the heating unit 25 is temperature-controlled as an independent zone by the temperature control unit 48, and the heating element 43 of each heating stage 57 is one continuous heating element, When there is an abnormality in the heating element 43, for example, when there is a disconnection, it can be detected immediately, and the deterioration state of the heating element at each stage can be easily grasped.

前記発熱部25の各段の前記発熱段部57の発熱体43は上下間で隙間が生じない様になっているので、非加熱部が生じない。又、最下段の発熱段部57迄、発熱体43が設けられており、発熱部25に非加熱部はないので、炉内の均熱領域は大きくとれ、ウェーハ処理の均一性が向上する。   The heating element 43 of the heating stage 57 of each stage of the heating part 25 is configured so that no gap is formed between the upper and lower sides, so that no non-heating part is generated. Further, since the heating element 43 is provided up to the lowest heating stage 57, and the heating part 25 has no non-heating part, a uniform temperature-uniforming area in the furnace can be taken, and the uniformity of wafer processing is improved.

前記発熱体43の発熱により、該発熱体43は熱膨張するが、下端が自由となっており、而も本体部43bと前記断熱部材56とは間隙が形成されているので、前記発熱体43の上下方向の熱歪みが拘束されることなく、該発熱体43の熱変形は自由となっている。又、前記折曲部43aは遊びを持って保持されているので、円周方向、半径方向に対しても拘束がなく而も前記スリット65a,65bが形成されているので、円周方向の熱歪みは前記スリット65a,65bによって吸収され、前記発熱体43には上下方向、円周方向、半径方向のいずれに対しても熱応力の発生が抑制される。   The heat generating element 43 thermally expands due to the heat generated by the heat generating element 43, but the lower end is free, and a gap is formed between the main body 43b and the heat insulating member 56. The thermal deformation of the heating element 43 is free without restraining the thermal strain in the vertical direction. Further, since the bent portion 43a is held with play, there is no restriction in the circumferential direction and the radial direction, and the slits 65a and 65b are formed. The distortion is absorbed by the slits 65a and 65b, and the heat generating body 43 is restrained from generating thermal stress in any of the vertical direction, the circumferential direction, and the radial direction.

又、前記発熱体43の下端が何らかの原因で上下方向間の熱膨張が拘束されたとしても、前記本体部43bが内側に向かって湾曲しているので、該本体部の熱変形は本体部が内側に向かって更に膨出する様に誘導され、不規則な熱変形が生じることが防止される。又、前記発熱体43は上端のみが保持されているので、該発熱体43が高温となり強度が低下した場合も、例えば、下端も拘束された場合、発生した応力により発生する座屈現象が防止される等、不規則な変形が生じることを防止できる。発熱体43は折曲部43aにて折曲げられており、発熱体43自身の強度が増しているので変形し難くなっている。   Even if the lower end of the heating element 43 is restrained from thermal expansion in the vertical direction for some reason, since the main body 43b is curved inward, the main body is subject to thermal deformation of the main body. It is induced to bulge further toward the inside, and irregular thermal deformation is prevented from occurring. Further, since only the upper end of the heating element 43 is held, the buckling phenomenon caused by the generated stress is prevented even when the heating element 43 becomes hot and the strength decreases, for example, when the lower end is also restrained. For example, irregular deformation can be prevented. The heating element 43 is bent at the bent portion 43a, and since the strength of the heating element 43 itself is increased, it is difficult to deform.

処理が完了すると、ウェーハ出炉温度、例えば550℃迄急速冷却される。該ウェーハ12処理後の冷却は、前記エアバルブ40,41が開かれ、空気或は窒素ガス等不活性ガスが冷却ガスとして前記冷却ガス供給ライン37,38より供給される。   When the process is complete, it is rapidly cooled to the wafer exit temperature, eg, 550 ° C. For cooling after the processing of the wafer 12, the air valves 40 and 41 are opened, and an inert gas such as air or nitrogen gas is supplied from the cooling gas supply lines 37 and 38 as a cooling gas.

該冷却ガス供給ライン38からの冷却ガスは、前記均熱管内空間39に供給される。又、前記冷却ガス供給ライン37からの冷却ガスは、前記冷却ガス導入ダクト36に供給され、前記円筒空間24に導入される。前記冷却ガス導入ダクト36から前記円筒空間24に至る流路には大きな方向変更がなく、圧力損失が少なく、冷却ガスの流れ性はよい。前記円筒空間24を上昇する冷却ガスは更に、前記ガス吹出し孔46を通って更に前記スリット65a,65bを通って前記炉内空間35に流入し、前記発熱部25を外面、内面の両側から急速に冷却する。   The cooling gas from the cooling gas supply line 38 is supplied to the soaking tube inner space 39. The cooling gas from the cooling gas supply line 37 is supplied to the cooling gas introduction duct 36 and introduced into the cylindrical space 24. The flow path from the cooling gas introduction duct 36 to the cylindrical space 24 is not greatly changed in direction, the pressure loss is small, and the flowability of the cooling gas is good. The cooling gas rising in the cylindrical space 24 further flows into the furnace space 35 through the gas blowing holes 46 and further through the slits 65a and 65b, so that the heat generating part 25 can be rapidly moved from both the outer surface and the inner surface. Cool down.

前記円筒空間24に導入される冷却ガスが、容積の大きな前記冷却ガス導入ダクト36を経て分散されることで、前記円筒空間24に均一に冷却ガスが流入し、冷却むらの発生が防止される。前記冷却ガス導入ダクト36自体は放熱特性が大きいが、前記断熱部ベース58が介在し、他の部分と半径方向の熱伝達率が同一とされているので、前記加熱装置2としては下端部の放熱量の増大が抑制される。   The cooling gas introduced into the cylindrical space 24 is dispersed through the cooling gas introduction duct 36 having a large volume, so that the cooling gas uniformly flows into the cylindrical space 24 and the occurrence of uneven cooling is prevented. . Although the cooling gas introduction duct 36 itself has a large heat radiation characteristic, the heat insulating portion base 58 is interposed, and the heat transfer coefficient in the radial direction is the same as the other portions. Increase in the amount of heat release is suppressed.

冷却ガスは、前記円筒空間24、前記炉内空間35、前記均熱管内空間39を上昇して前記排気導路28より排気される。前記内層断熱体45は前記円筒空間24、前記炉内空間35を上昇する冷却ガスにより冷却され、前記均熱管3、前記反応管4は前記炉内空間35、前記均熱管内空間39を上昇する冷却ガスにより急速に冷却される。   The cooling gas rises in the cylindrical space 24, the furnace space 35, and the soaking tube space 39 and is exhausted from the exhaust conduit 28. The inner layer insulator 45 is cooled by a cooling gas that rises in the cylindrical space 24 and the furnace space 35, and the soaking tube 3 and the reaction tube 4 ascend the furnace space 35 and the soaking tube space 39. It is cooled rapidly by the cooling gas.

而して、前記反応管4内の前記ウェーハ12は急速冷却される。 前記発熱体43にセラミック発熱体を採用することで、急速加熱、高温加熱が可能となり、更に冷却ガスによる前記加熱装置2の冷却により急速冷却が可能となっている。   Thus, the wafer 12 in the reaction tube 4 is rapidly cooled. By adopting a ceramic heating element as the heating element 43, rapid heating and high-temperature heating are possible, and further rapid cooling is possible by cooling the heating device 2 with a cooling gas.

冷却が完了すると、図示しないボートエレベータにより前記ボート5が降下され、該ボート5から処理済のウェーハ12が払出される。尚、減圧処理の場合は、反応室を大気圧迄復帰させた後、前記ボート5が降下される。   When the cooling is completed, the boat 5 is lowered by a boat elevator (not shown), and the processed wafers 12 are discharged from the boat 5. In the case of decompression processing, the boat 5 is lowered after the reaction chamber is returned to atmospheric pressure.

次に、図6〜8を参照しながら、本発明の第二の実施形態について説明する。なお、以下の実施形態や改変例においては、上記と同様の部材には同様の符号を附してある。   Next, a second embodiment of the present invention will be described with reference to FIGS. In the following embodiments and modifications, members similar to those described above are denoted by the same reference numerals.

本実施形態の下側部分では、絶縁体(断熱部材)56が複数の分割体56aを積層することで構成されている。支持体(ヒーター保持部)59には貫通孔59aが形成され、L字型の固定釘59bにより絶縁体に固定されている。発熱体43の折曲部43aのうち上解放スリット65bには小さな碍管(絶縁体)である第一絶縁片66が挿入され、上解放スリット65bを挟む発熱体43同士の短絡を防いでいる。この第一絶縁片66は、上支持部62と下支持部61との間で囲まれる掛止部74に収納されて脱落が防がれる。発熱体43の下部は絶縁体である下固定ピン52をスリット65に貫通させ、スリット65長手方向に移動自在で且つスリット65垂直方向の移動を規制された状態で絶縁体である第二絶縁片67を介して絶縁体56に固定される。また、下固定ピン52による固定は上解放スリット65bの他、符号52xに示すような下解放スリット65aの位置で行っても構わない。   In the lower portion of the present embodiment, an insulator (heat insulating member) 56 is configured by stacking a plurality of divided bodies 56a. A through hole 59a is formed in the support body (heater holding portion) 59, and is fixed to the insulator by an L-shaped fixing nail 59b. A first insulating piece 66, which is a small soot tube (insulator), is inserted into the upper release slit 65b of the bent portion 43a of the heat generator 43 to prevent a short circuit between the heat generators 43 sandwiching the upper release slit 65b. The first insulating piece 66 is housed in a latching portion 74 surrounded by the upper support portion 62 and the lower support portion 61, and is prevented from falling off. A lower insulating pin 52, which is an insulator, passes through the slit 65 at the lower portion of the heat generating body 43, and is movable in the longitudinal direction of the slit 65 and in a state where movement in the vertical direction of the slit 65 is restricted. It is fixed to the insulator 56 through 67. Further, the fixing by the lower fixing pin 52 may be performed at the position of the lower release slit 65a as indicated by reference numeral 52x in addition to the upper release slit 65b.

図6の上側部分では、発熱体43が絶縁体である上固定ピン53により吊り下げ支持される。絶縁体56は第二〜第四分割体56b〜dを積層して構成してある。各下解放スリット65aに上固定ピン53を貫通させ、絶縁体である第三絶縁片68を介して発熱体43を絶縁体56に固定している。   In the upper part of FIG. 6, the heating element 43 is suspended and supported by an upper fixing pin 53 that is an insulator. The insulator 56 is formed by stacking second to fourth divided bodies 56b to 56d. The upper fixing pin 53 is passed through each lower release slit 65a, and the heating element 43 is fixed to the insulator 56 via a third insulating piece 68 which is an insulator.

各発熱体43,43の間の適宜箇所には、ガスを吹き出すためのノズル69を絶縁体59を貫通させてガス吹出口69aを形成してある。各ガス吹出口69aは各発熱体43,43の間に位置し、吹き出したガスが発熱体43に直接的に当たらないように配置する。これにより、直接的に発熱体43にガスが当たることにより、局所的に一部のみが冷却され、熱むらが起こりやすくなることを防止し、発熱体43の劣化を防ぐ。   A gas outlet 69a is formed at an appropriate location between the heating elements 43, 43 by penetrating a nozzle 69 for blowing out gas through the insulator 59. Each gas outlet 69a is located between each heat generating body 43 and 43, and it arrange | positions so that the blown-out gas may not hit the heat generating body 43 directly. As a result, the gas directly hits the heating element 43, so that only a part of the heating element 43 is locally cooled to prevent heat unevenness, and the deterioration of the heating element 43 is prevented.

本実施形態では、最下段のゾーンを折曲部43aを利用して発熱体43を支持し、中段のゾーンをピン53を利用して発熱体43を支持している。このように、最下段及び/又は最上段のゾーンに対し折曲部43aを利用した発熱体のユニット(上記発熱段部)を配置し、その他の部分には他の支持を用いた発熱体を配置することで、各ゾーンの中でも最も外乱の影響(ボート出入時の熱の逃げや、加熱装置の下端開口部からの熱の逃げ等)により、温度がバラツきやすいのを支持体59に至るまでオーバーラップして発熱体43を設けることで、温度制御範囲を広げることができる。また、例えば、上下に4つのゾーンを形成する際にその中の1つのゾーンのみを本発明に係る発熱段部57としてもよいし、2つとしても3つとしてもよい。そのことにより、各ゾーンの中でも最も外乱の影響により、過負荷になり易い最下段のゾーンの発熱体の劣化を防ぐことができる。   In the present embodiment, the heating element 43 is supported by using the bent portion 43 a in the lowermost zone, and the heating element 43 is supported by using the pin 53 in the middle zone. In this manner, the heating element unit (the heating step part) using the bent portion 43a is arranged for the lowermost stage and / or the uppermost zone, and the heating elements using other supports are arranged in the other parts. By arranging it, the temperature tends to fluctuate up to the support body 59 due to the influence of disturbance most in each zone (e.g. heat escape when entering and leaving the boat and heat escape from the lower end opening of the heating device). By providing the heating element 43 in an overlapping manner, the temperature control range can be expanded. Further, for example, when four zones are formed on the upper and lower sides, only one of the zones may be used as the heat generating step portion 57 according to the present invention, or two or three may be used. As a result, it is possible to prevent deterioration of the heating element in the lowermost zone that is likely to be overloaded due to the influence of disturbances in each zone.

次に、図9及び図10を参照しながら、本発明の第三の実施形態について説明する。図9に示すように、本発明に係る電気ヒーターHは、大略、複数の発熱体43と、この発熱体43を支持する支持体59と、支持体59を支持する絶縁体であり断熱部材であるセラミックボード56とからなる。   Next, a third embodiment of the present invention will be described with reference to FIGS. As shown in FIG. 9, the electric heater H according to the present invention is roughly a plurality of heating elements 43, a support body 59 that supports the heating elements 43, an insulator that supports the support body 59, and is a heat insulating member. It consists of a certain ceramic board 56.

発熱体43には、発熱体43の長手方向に交差する複数のスリット65が形成してあり、発熱体43が蛇行状の回路を構成している。また、図10(a)に示すように、発熱体43の一方の先端には、支持体59に掛止させるための略L字状、すなわち略直角に折り曲げられた折曲部43aが設けられている。また、発熱体43は、幅方向に対して平面状に連続している。   The heating element 43 is formed with a plurality of slits 65 intersecting with the longitudinal direction of the heating element 43, and the heating element 43 constitutes a meandering circuit. Further, as shown in FIG. 10A, at one end of the heating element 43, there is provided a bent portion 43a bent substantially at an L shape, that is, bent at a substantially right angle to be hooked on the support body 59. ing. Further, the heating element 43 is continuous in a planar shape with respect to the width direction.

支持体59は、図10(a)に示すように、上支持部62と下支持部61との間に略L字状の掛止部74を形成してなる。この掛止部74は折曲部43aが掛止される下壁部61aと、下壁部61aに略平行で折曲部43aの上側への抜けを防止する上壁部62bと、折曲部43aの水平方向への脱落を防止するための上壁部62bから垂下する横壁部62aとを備えている。   As shown in FIG. 10A, the support body 59 is formed by forming a substantially L-shaped latching portion 74 between the upper support portion 62 and the lower support portion 61. The hook portion 74 includes a lower wall portion 61a to which the bent portion 43a is hooked, an upper wall portion 62b that is substantially parallel to the lower wall portion 61a and prevents the bent portion 43a from being pulled upward, and a bent portion. A horizontal wall portion 62a that hangs down from the upper wall portion 62b to prevent the horizontal displacement of 43a.

発熱体43は、掛止部74によってのみ支持されるので、発熱体43からの熱の逃げが抑制されるため、熱効率がよい。そして、発熱体43の下端は、水平方向視(又は、電気ヒーターH全体の発熱面に対する直交方向Dh)で支持体59と重なり、発熱体43の上端よりもセラミックボード56から隔たっているので、たとえ発熱体43が熱膨張しても上下端が接触する恐れがない。この場合、発熱体43の下端は、横壁部62aの上に乗り上げ、又は、横壁部62aとの間に隙間を有してもよい。発熱体43の下端と上端との水平方向の隔たりは、両者間での加熱が均一に行われるように調整すればよい。なお、断熱体であるセラミックボード56は幅方向に対して平面状に連続している。   Since the heat generating body 43 is supported only by the latching portion 74, the heat escape from the heat generating body 43 is suppressed, so that the heat efficiency is good. And since the lower end of the heat generating body 43 overlaps with the support body 59 in the horizontal direction view (or the orthogonal direction Dh to the heat generating surface of the entire electric heater H), it is separated from the ceramic board 56 than the upper end of the heat generating body 43. Even if the heating element 43 is thermally expanded, there is no fear that the upper and lower ends are in contact with each other. In this case, the lower end of the heating element 43 may ride on the horizontal wall portion 62a or may have a gap with the horizontal wall portion 62a. The horizontal distance between the lower end and the upper end of the heating element 43 may be adjusted so that the heating between them is uniformly performed. In addition, the ceramic board 56 which is a heat insulator is continuous in a planar shape with respect to the width direction.

次に、本発明の第三の実施形態の改変例について説明する。
図10(b)に示す改変例では、図10(a)に示す改変例と発熱体43の形状が異なる。発熱体43に湾曲部73を形成し、発熱体43の上端と下端との間に放熱側に対するオフセット距離を設けながら、発熱体43の大半を垂直に垂下させるように構成している。
Next, a modified example of the third embodiment of the present invention will be described.
In the modified example shown in FIG. 10B, the shape of the heating element 43 is different from the modified example shown in FIG. A curved portion 73 is formed in the heat generating element 43, and most of the heat generating element 43 is vertically suspended while providing an offset distance with respect to the heat radiation side between the upper end and the lower end of the heat generating element 43.

図10(c)に示す改変例は、発熱体43の下端が横壁部62aに乗り上げず、支持体59から熱膨張分だけ隔たっている。
図10(d)に示す改変例では、下支持部61の形状が(a)と異なると共に、隣接する上支持部62の先端部に絶縁体である突起75を設けている。下支持部61は、平坦に整形されており、また、突起75により、発熱体43が熱変形してその下端が前側に突出することを防いでいる。
In the modified example shown in FIG. 10C, the lower end of the heating element 43 does not ride on the lateral wall 62 a and is separated from the support body 59 by the amount of thermal expansion.
In the modified example shown in FIG. 10D, the shape of the lower support portion 61 is different from that in FIG. 10A, and a protrusion 75 that is an insulator is provided at the tip of the adjacent upper support portion 62. The lower support portion 61 is shaped flat, and the protrusion 75 prevents the heating element 43 from being thermally deformed and its lower end protruding from the front side.

図11(a),図12に示す第四の実施形態では、図12に示すように、発熱体43、支持体59及びセラミックボード56が湾曲したものを用いており、固定具77により発熱体43を支持した支持体59をセラミックボード56に固定する点で第三の実施形態と異なる。図11に示すように、固定具77は、ボルト78a,ナット78b,ワッシャ78cよりなり、適宜間隔に止金78dを取り付けた支持体59をボルト78aによりステンレス板76を取り付けたセラミックボード56に取り付け、ボルト78aにワッシャ78cを挟みナット78bを締め付け固定する。支持体59は、適宜間隔をおいて固定具77によりセラミックボード56に固定することにより強度を高めている。   In the fourth embodiment shown in FIGS. 11A and 12, as shown in FIG. 12, the heating element 43, the support body 59 and the ceramic board 56 are curved, and the fixing element 77 causes the heating element to be curved. The third embodiment is different from the third embodiment in that the support body 59 supporting 43 is fixed to the ceramic board 56. As shown in FIG. 11, the fixture 77 includes a bolt 78a, a nut 78b, and a washer 78c, and a support body 59 having a stopper 78d attached at an appropriate interval is attached to a ceramic board 56 to which a stainless steel plate 76 is attached by a bolt 78a. The washer 78c is sandwiched between the bolts 78a and the nuts 78b are fastened and fixed. The support body 59 is increased in strength by being fixed to the ceramic board 56 by a fixing tool 77 at an appropriate interval.

また、図11(b)に第四の実施形態の改変例を示す。本改変例では、支持体の構造が異なる。支持体79は、セラミックボード56に固定される固定部81と、固定部81に挿脱可能な調整部82と、掛止部83とよりなる。固定部81には、発熱体43の折曲部43aを掛止するための先の下壁部に相当する凹部81aが設けられ、調整部82は、固定部81に挿脱するために把握され横壁部として機能するつまみ82aと、先の上壁部として機能する挿入軸82bとよりなる。この調整部82の挿入位置を調整することにより、挿入軸82bが折曲部43aの脱落を防止する上壁部となる共に、発熱体43の取り外し等の保守作業が容易となる。   FIG. 11B shows a modified example of the fourth embodiment. In this modification, the structure of the support is different. The support 79 includes a fixing portion 81 fixed to the ceramic board 56, an adjustment portion 82 that can be inserted into and removed from the fixing portion 81, and a hooking portion 83. The fixing portion 81 is provided with a concave portion 81 a corresponding to the lower wall portion for hooking the bent portion 43 a of the heating element 43, and the adjustment portion 82 is grasped for insertion into and removal from the fixing portion 81. It consists of a knob 82a that functions as a horizontal wall portion and an insertion shaft 82b that functions as an upper wall portion. By adjusting the insertion position of the adjustment portion 82, the insertion shaft 82b serves as an upper wall portion that prevents the bent portion 43a from falling off, and maintenance work such as removal of the heating element 43 is facilitated.

次に、図13に示す第五の実施形態では、図13(b)に示すように、支持体85は、L字状のハンガーピン86と、スペーサー87と、碍子88とよりなり、発熱体43には折曲部43aを設けず、平坦に形成してなる。なお、図13〜19は、図10の実施形態と同様に、支持体59及びセラミックボード56が湾曲したものを用いている。ハンガーピン86を適宜間隔をおいて同一高さとなるようセラミックボード56に固定し、スリット65によりハンガーピン86に発熱体43を掛止させる。そして、ハンガーピン86に取り付けたスペーサー87と、ハンガーピン86の突出部に取り付けた碍子88により発熱体43を挟持させる。また、発熱体43の下側端は、隣接する碍子88に乗り上げないし隙間を空けてオーバーラップする様に近接し、発熱体43の上側端と近接している。   Next, in the fifth embodiment shown in FIG. 13, as shown in FIG. 13B, the support body 85 is composed of an L-shaped hanger pin 86, a spacer 87, and an insulator 88. 43 is not provided with a bent portion 43a and is formed flat. 13 to 19 use the curved support body 59 and the ceramic board 56 as in the embodiment of FIG. The hanger pins 86 are fixed to the ceramic board 56 so as to have the same height at appropriate intervals, and the heating element 43 is hooked on the hanger pins 86 by the slits 65. The heating element 43 is sandwiched between the spacer 87 attached to the hanger pin 86 and the insulator 88 attached to the protruding portion of the hanger pin 86. Further, the lower end of the heating element 43 is close to the adjacent insulator 88 so as to ride on or overlap with the adjacent insulator 88 and close to the upper end of the heating element 43.

ここで、図14〜18を参照しながら第五の実施形態の改変例について説明する。 図14に示す改変例では、碍子88の形状が相違し、水平方向に対し幅広に成形することにより、発熱体43の安定性を高めている。   Here, a modified example of the fifth embodiment will be described with reference to FIGS. In the modified example shown in FIG. 14, the shape of the insulator 88 is different, and the stability of the heating element 43 is enhanced by forming the insulator 88 wider in the horizontal direction.

図15に示す改変例は、碍子88を用いずセラミックボード56に設けた凸部56xにより、発熱体43の下側端を上側端よりもセラミックボード56から離隔させ、下側端と上側端とを近接させている。   In the modified example shown in FIG. 15, the lower end of the heating element 43 is separated from the ceramic board 56 rather than the upper end by the convex portion 56 x provided on the ceramic board 56 without using the insulator 88, and the lower end and the upper end are separated. Are in close proximity.

図16に示す改変例では、図15に示す凸部56xと異なる高さの凸部56yをセラミックボード56に設け、発熱体43の上側端と下側端とを近接させている。さらに、凸部56xにハンガーピン86を用い、発熱体43の上解放スリット65aの下端に貫通させることにより、発熱体43はスリット65の長手方向に移動自在であるがスリットの垂直方向への移動をハンガーピン86により規制している。   In the modified example shown in FIG. 16, a convex portion 56 y having a height different from that of the convex portion 56 x shown in FIG. 15 is provided on the ceramic board 56, and the upper end and the lower end of the heating element 43 are brought close to each other. Furthermore, by using a hanger pin 86 for the convex portion 56x and penetrating the lower end of the upper release slit 65a of the heating element 43, the heating element 43 can move in the longitudinal direction of the slit 65, but the slit moves in the vertical direction. Is regulated by a hanger pin 86.

図17に示す改変例は、セラミックボード56に固定した板状の絶縁体である碍子89により、発熱体43の上側端と下側端とを近接させている。
図18に示す改変例は、発熱体43の厚みとほぼ同一幅の凹部86aを設けたハンガーピン86を用い、凹部86aにスリット65を嵌合させ、発熱体43を掛止させている。
In the modified example shown in FIG. 17, the upper end and the lower end of the heating element 43 are brought close to each other by an insulator 89 that is a plate-like insulator fixed to the ceramic board 56.
In the modified example shown in FIG. 18, a hanger pin 86 provided with a recess 86 a having substantially the same width as the thickness of the heating element 43 is used, the slit 65 is fitted into the recess 86 a, and the heating element 43 is hooked.

図19に示す第六の実施形態は、発熱体43の形状の改変に関する。発熱体43は、熱膨張によりセラミックボード56側に変形してしまう。そのため、発熱体43の上下方向中間部が、あらかじめセラミックボード56から離反するよう、この中間部をセラミックボード56とは反対側に突出するよう湾曲させておき、変形による支持体からの脱落を防止している。さらに、湾曲させたことにより、変形が湾曲した側つまり、セラミックボード56とは、反対側に大きく突き出るようになってしまう場合、絶縁体であるハンガーピン86を用い、発熱体43のスリット65に貫通させて、一番大きく湾曲した箇所に配置することで発熱体43の湾曲した側への変形を所定の大きさまでとするように規制する。   The sixth embodiment shown in FIG. 19 relates to modification of the shape of the heating element 43. The heating element 43 is deformed toward the ceramic board 56 due to thermal expansion. For this reason, the intermediate portion of the heating element 43 is curved so as to protrude in the opposite direction to the ceramic board 56 so that the intermediate portion in the vertical direction is separated from the ceramic board 56 in advance, thereby preventing the support member from falling off due to deformation. is doing. Furthermore, when the deformation causes the deformation to protrude largely toward the opposite side of the ceramic board 56, the hanger pin 86, which is an insulator, is used to form the slit 65 of the heating element 43. By penetrating and arranging at the most curved part, the deformation of the heating element 43 to the curved side is restricted to a predetermined size.

図20(a)の参考の実施形態は、主として天井部に用いられ、支持体の構造が異なる。セラミックボード56に固定具77を介して固定された支持体90は、セラミックボード56に固定される固定部90aと、固定部90aに挿脱可能な調整部90bよりなる。固定部90aには、発熱体43の両端部に設けられた折曲部43aが掛止するための差込部91が設けられている。折曲部43aを支持体90の差込部91に差し込み、調整部90bを固定部90aに挿嵌し、発熱体43を固定する。   The reference embodiment of FIG. 20A is mainly used for a ceiling portion, and the structure of the support is different. The support 90 fixed to the ceramic board 56 via a fixing tool 77 includes a fixing portion 90a fixed to the ceramic board 56 and an adjustment portion 90b that can be inserted into and removed from the fixing portion 90a. The fixing portion 90 a is provided with an insertion portion 91 for latching the bent portions 43 a provided at both ends of the heating element 43. The bent portion 43a is inserted into the insertion portion 91 of the support 90, the adjustment portion 90b is inserted into the fixing portion 90a, and the heating element 43 is fixed.

また図20(b)には、本実施形態の改変例を示す。本改変例は、止金を取り付けることなく支持体92を固定具77によりセラミックボード56に固定している。また、支持体92の両側には、発熱体を取り付けやすくするよう形成した差込部94を備えている。その差込部94は、図20(a)に示す差込部91とは反対方向に凹みを形成しており、差込部94に折曲部43aを掛止させ、発熱体43を固定している。   FIG. 20B shows a modification of the present embodiment. In this modified example, the support body 92 is fixed to the ceramic board 56 by the fixing member 77 without attaching a clasp. Further, on both sides of the support 92, there are provided insertion portions 94 formed so as to make it easier to attach the heating element. The insertion portion 94 is formed with a recess in the opposite direction to the insertion portion 91 shown in FIG. 20A, and the bent portion 43 a is hooked on the insertion portion 94 to fix the heating element 43. ing.

さらに、図20(c)に示す改変例では、湾曲したセラミックボード56において、支持体93に設けた差込部95に発熱体43の折曲部43aをそれぞれ差し込み、発熱体43の反発力により、支持体93をセラミックボード56に固定している。本改変例は、湾曲していれば、天井部に限らず、壁面部であっても用いることができる。   Furthermore, in the modified example shown in FIG. 20C, in the curved ceramic board 56, the bent portions 43 a of the heating elements 43 are respectively inserted into the insertion portions 95 provided in the support body 93, and the repulsive force of the heating elements 43 The support 93 is fixed to the ceramic board 56. This modified example can be used not only on the ceiling but also on the wall as long as it is curved.

図21(a)に示す参考の実施形態では、発熱体43の歪みによる脱落を防止する突出部98を有している。突出部98は、突出部98の先端部がほぼ発熱体43の中央部に位置するようセラミックボード56,56間に設け、突出部98の先端部と発熱体43の中央部とは接近している。そのため、発熱体43にセラミックボード56側への歪みが生じても突出部98により歪みが抑制され、発熱体43の上先端部が挿入している差込部97からの発熱体43の脱落を防止することができる。   In the reference embodiment shown in FIG. 21A, a protrusion 98 that prevents the heating element 43 from falling off due to distortion is provided. The protrusion 98 is provided between the ceramic boards 56 and 56 so that the tip of the protrusion 98 is positioned substantially at the center of the heating element 43, and the tip of the protrusion 98 and the center of the heating element 43 are close to each other. Yes. Therefore, even if the heat generating element 43 is distorted toward the ceramic board 56, the distortion is suppressed by the protruding portion 98, and the heat generating element 43 is removed from the insertion portion 97 in which the upper end portion of the heat generating element 43 is inserted. Can be prevented.

また、図21(b)、(c)には本実施形態の改変例を示す。図21(b)に示す改変例は、セラミックボード56のほぼ中央部に凸部56zを設けることで突出部突出部98と同一の役割を果たしている。また、図21(c)に示す改変例は、発熱体43,セラミックボード56間にわずかな隙間Cを設けている。この隙間Cにより、熱による歪みが生じた発熱体43がセラミックボード56zと当接し、歪みによる発熱体43の脱落を防止することができる。 尚、本発明は前記実施の形態に限定されるものではなく、その要旨を逸脱しない範囲で種々に変更が可能である。   21 (b) and 21 (c) show modified examples of this embodiment. The modified example shown in FIG. 21B plays the same role as the protruding portion projecting portion 98 by providing the protruding portion 56 z at the substantially central portion of the ceramic board 56. Further, in the modified example shown in FIG. 21C, a slight gap C is provided between the heating element 43 and the ceramic board 56. Due to the gap C, the heat generating element 43 in which distortion due to heat is generated contacts the ceramic board 56z, and the heat generating element 43 can be prevented from falling off due to distortion. In addition, this invention is not limited to the said embodiment, A various change is possible in the range which does not deviate from the summary.

図6〜21の実施形態に示す電気ヒーターは図1〜5に示す基板処理装置に使用することが可能である。また、上記各実施形態では、図9,10,20(a)(b)の実施形態では発熱体43の長手方向に対し発熱体43及び断熱体56が直線的に連続し、図1〜8,11〜19,20(c),21の実施形態・改変例では発熱体43の長手方向に対し発熱体43及び断熱体56が曲面的に連続した。しかし、図9,10,20(a)(b)の実施形態では発熱体43の長手方向に対し発熱体43及び断熱体56が曲面的に連続し、図1〜8,11〜19,20(c),21の実施形態では発熱体43の長手方向に対し発熱体43及び断熱体56が直線的に連続しても構わない。   The electric heater shown in the embodiment of FIGS. 6 to 21 can be used in the substrate processing apparatus shown in FIGS. Further, in each of the above embodiments, in the embodiment of FIGS. 9, 10, 20 (a) and (b), the heating element 43 and the heat insulator 56 are linearly continuous with respect to the longitudinal direction of the heating element 43, and FIGS. 11 to 19, 20 (c), 21, the heating element 43 and the heat insulator 56 are curved and continuous with respect to the longitudinal direction of the heating element 43. However, in the embodiment of FIGS. 9, 10, 20 (a) and (b), the heating element 43 and the heat insulator 56 are curvedly continuous with respect to the longitudinal direction of the heating element 43, and FIGS. In the embodiments of (c) and 21, the heating element 43 and the heat insulator 56 may be linearly continuous with respect to the longitudinal direction of the heating element 43.

上記各実施形態・改変例において、蛇行ヒーターは平板状に限られず、線材を蛇行状に展開させたものでも構わない。
上記各実施形態・改変例において、発熱体は、上下方向に垂直に配置するのみならず、発熱体の平面を鉛直方向に傾斜状に配置したり水平に配置しても構わない。
In each of the above-described embodiments and modifications, the meandering heater is not limited to a flat plate shape, and a wire rod developed in a meandering shape may be used.
In each of the above embodiments and modifications, the heating element is not only arranged vertically in the vertical direction, but the plane of the heating element may be arranged inclined in the vertical direction or arranged horizontally.

上記支持体、突起、固定ピン、絶縁片、碍子等を構成する絶縁材料としては、アルミナ質、アルミナシリカ質、ムライト質、ジルコン質又はコージライトを主体とするセラミックスや炭化けい素、窒化けい素等の他、断熱体の断熱耐火物よりも硬質かつ良熱伝導性のものであれば、様々なものを用いることができる。また、上記断熱部材(絶縁体)56を構成する断熱耐火物としては、セラミックスファイバーやセラミックス粉末に有機・無機のバインダーを混入したものなど、様々なものを用いることが可能である。これら断熱体及び支持体を構成する材料の種類や配合は、電気ヒーターの使用温度等に応じて適宜変更することができる。   Examples of the insulating material constituting the support, protrusions, fixing pins, insulating pieces, insulators, etc. include ceramics, silicon carbide, silicon nitride mainly composed of alumina, alumina silica, mullite, zircon, or cordierite. In addition to the above, various materials can be used as long as they are harder and have better heat conductivity than the heat-insulating refractory of the heat insulator. As the heat insulating refractory constituting the heat insulating member (insulator) 56, various materials such as ceramic fibers and ceramic powder mixed with organic / inorganic binder can be used. The kind and the mixing | blending of the material which comprise these heat insulation bodies and a support body can be suitably changed according to the operating temperature etc. of an electric heater.

本発明に係る基板処理装置並びに基板処理装置用電気ヒーター及びこれを備えた基板処理装置は、半導体装置を製造する装置に、シリコンウェーハ、ガラス基板等の基板に薄膜の生成、アニール処理、不純物の拡散、エッチング等の処理を行う基板処理装置に使用することができ、本発明の基板処理装置用電気ヒーターは室温から1400℃に至る加温まで適用可能である。   A substrate processing apparatus according to the present invention, an electric heater for the substrate processing apparatus, and a substrate processing apparatus provided with the substrate processing apparatus are used for manufacturing a semiconductor device, forming a thin film on a substrate such as a silicon wafer and a glass substrate, annealing, It can be used in a substrate processing apparatus that performs processing such as diffusion and etching, and the electric heater for a substrate processing apparatus of the present invention can be applied from room temperature to heating up to 1400 ° C.

本発明の実施の形態に係る基板処理装置の縦型炉の断面概略図である。1 is a schematic cross-sectional view of a vertical furnace of a substrate processing apparatus according to an embodiment of the present invention. 該縦型炉の加熱装置の最下段部分の断面図である。It is sectional drawing of the lowest step part of the heating apparatus of this vertical furnace. 該加熱装置の内層断熱体の断面図である。It is sectional drawing of the inner-layer heat insulating body of this heating apparatus. 該加熱装置の発熱体の斜視図である。It is a perspective view of the heat generating body of this heating device. 発熱体の結線状態を示す概略判面図である。It is a schematic plan view which shows the connection state of a heat generating body. 本発明に係る基板処理装置の第二の実施形態を示し、(a)は電気ヒーターの正面図(b)は(a)のA−A断面図である。2nd Embodiment of the substrate processing apparatus which concerns on this invention is shown, (a) is a front view of an electric heater, (b) is AA sectional drawing of (a). 図6(b)の支持体部の拡大図である。It is an enlarged view of the support body part of FIG.6 (b). 発熱体上部と絶縁片との関係を示す図である。It is a figure which shows the relationship between a heat generating body upper part and an insulation piece. 本発明に係る基板処理装置に適用可能な電気ヒーターの第三の実施形態の正面図である。It is a front view of 3rd embodiment of the electric heater applicable to the substrate processing apparatus which concerns on this invention. (a)は図9のB−B断面図であり、(b)〜(d)は(a)の改変例を示す断面図である。(A) is BB sectional drawing of FIG. 9, (b)-(d) is sectional drawing which shows the modification of (a). (a)は本発明の第四の実施形態を示す図10(a)相当図、(b)は(a)の改変例を示す断面図である。(A) is a figure equivalent to Drawing 10 (a) showing a 4th embodiment of the present invention, and (b) is a sectional view showing a modification of (a). 図11(a)のC−C断面図である。It is CC sectional drawing of Fig.11 (a). (a)は本発明の第五の実施形態を示す正面図、(b)は(a)のD−D断面図である。(A) is a front view which shows 5th embodiment of this invention, (b) is DD sectional drawing of (a). (a)は本発明の第五の実施形態の改変例を示す正面図、(b)は(a)のE−E断面図である。(A) is a front view which shows the modification of 5th embodiment of this invention, (b) is EE sectional drawing of (a). (a)は本発明の第五の実施形態の改変例を示す正面図、(b)は(a)のF−F断面図である。(A) is a front view which shows the modification of 5th embodiment of this invention, (b) is FF sectional drawing of (a). (a)は本発明の第五の実施形態の改変例を示す正面図、(b)は(a)のG−G断面図である。(A) is a front view which shows the modification of 5th embodiment of this invention, (b) is GG sectional drawing of (a). (a)は本発明の第五の実施形態の改変例を示す正面図、(b)は(a)のH−H断面図である。(A) is a front view which shows the modification of 5th embodiment of this invention, (b) is HH sectional drawing of (a). (a)は本発明の第五の実施形態の改変例を示す正面図、(b)は、(a)のI−I断面図である。(A) is a front view which shows the modification of 5th embodiment of this invention, (b) is II sectional drawing of (a). (a)は本発明の第六の実施形態を示す正面図、(b)は(a)のJ−J断面図である。(A) is a front view which shows 6th embodiment of this invention, (b) is JJ sectional drawing of (a). (a)は参考の実施形態を示す図10(a)相当図、(b)、(c)は(a)の改変例を示す断面図である。FIG. 10A is a view corresponding to FIG. 10A showing a reference embodiment, and FIGS. 10B and 10C are cross-sectional views showing modified examples of FIG. (a)は参考の実施形態を示す図10(a)相当図、(b)、(c)は(a)の改変例を示す断面図である。FIG. 10A is a view corresponding to FIG. 10A showing a reference embodiment, and FIGS. 10B and 10C are cross-sectional views showing modified examples of FIG. 従来の基板処理装置を示す断面図である。It is sectional drawing which shows the conventional substrate processing apparatus. 該従来例の加熱装置の立断面図である。It is a sectional elevation view of the conventional heating device. 該従来例の加熱装置の平断面図である。It is a plane sectional view of the heating device of the conventional example. 該従来例の加熱装置の部分断面図である。It is a fragmentary sectional view of the heating device of the conventional example.

符号の説明Explanation of symbols

H:電気ヒーター,2:加熱装置,3:均熱管,4:反応管,5:ボート,12:ウェーハ,25:発熱部,42:外層断熱体,43:発熱体,43a:折曲部,43b:本体部,43x、43y:端子,45:内層断熱体,43:発熱体,43a:折曲部,52:下固定ピン,53:上固定ピン,56:セラミックボード(絶縁体、断熱部材),56a〜d:第一〜第四分割体,56x、56y、56z:凸部,57:発熱段部,59:支持体,59a:貫通孔,59b:固定釘,61:下支持部,61a:先端部,62:上支持部,62a:横壁部,62b:上壁部,63:突条,65:スリット,65a:下開放スリット,65b:上開放スリット,66:第一絶縁片,67:第二絶縁片,68:第三絶縁片,69:ノズル,72:縁部,73:湾曲部,74:掛止部,75:突起,76:ステンレス板,77:固定具,78a:ボルト,78b:ナット,78c:ワッシャ,78d、78e:止金,79:支持体,81:固定部,81a:凹部(先端部),82:調整部,82a:つまみ(横壁部),82b:挿入軸(上壁部),83:掛止部,85:支持体,86:ハンガーピン,86a:凹部,87:スペーサー,88、89:碍子,90:支持体,90a:固定部,90b:調整部,91:差込部,92、93:支持体,94,95:差込部,96:支持体,97:差込部,98:突出部,100:ヒーター,101、101a:発熱体,102:支持体,102a:差込部,103:成形体


H: Electric heater, 2: Heating device, 3: Soaking tube, 4: Reaction tube, 5: Boat, 12: Wafer, 25: Heat generation part, 42: Outer insulation, 43: Heat generation element, 43a: Bending part, 43b: body part, 43x, 43y: terminal, 45: inner layer insulator, 43: heating element, 43a: bent part, 52: lower fixing pin, 53: upper fixing pin, 56: ceramic board (insulator, heat insulating member) ), 56a to d: first to fourth divided bodies, 56x, 56y, 56z: convex portion, 57: heat generating step portion, 59: support, 59a: through hole, 59b: fixing nail, 61: lower support portion, 61a: tip portion, 62: upper support portion, 62a: lateral wall portion, 62b: upper wall portion, 63: ridge, 65: slit, 65a: lower open slit, 65b: upper open slit, 66: first insulating piece, 67: Second insulating piece, 68: Third insulating piece, 69: Nozzle, 72: Edge 73: curved portion, 74: latching portion, 75: protrusion, 76: stainless steel plate, 77: fixing tool, 78a: bolt, 78b: nut, 78c: washer, 78d, 78e: clasp, 79: support, 81: fixing part, 81a: recess (tip part), 82: adjustment part, 82a: knob (lateral wall part), 82b: insertion shaft (upper wall part), 83: latching part, 85: support, 86: hanger Pin, 86a: recess, 87: spacer, 88, 89: insulator, 90: support, 90a: fixing part, 90b: adjustment part, 91: insertion part, 92, 93: support, 94, 95: insertion Part, 96: support, 97: insertion part, 98: protruding part, 100: heater, 101, 101a: heating element, 102: support, 102a: insertion part, 103: molded article


Claims (14)

基板を収納し処理する処理室と、発熱体を有し該発熱体により前記処理室内を加熱する加熱装置とを具備し、前記発熱体は一端のみを保持部によって保持され、少なくとも一部が前記基板に向かって凸となる様に形成されたことを特徴とする基板処理装置。   A processing chamber that houses and processes the substrate; and a heating device that has a heating element and heats the processing chamber by the heating element, wherein the heating element is held only at one end by a holding portion, at least a part of which is A substrate processing apparatus formed so as to be convex toward a substrate. 蛇行状の発熱体(43)の上側端を支持体(59)に固定し、前記発熱体(43)の下側端を上下方向に移動自在な状態とし、これら上側端と下側端とを近接させ、同発熱体(43)の中間部を絶縁体(56)から離隔させてある基板処理装置用電気ヒーター。 The upper end of the serpentine heating element (43) is fixed to the support (59), the lower end of the heating element (43) is movable in the vertical direction, and the upper end and the lower end are connected to each other. An electric heater for a substrate processing apparatus, which is brought close to each other and an intermediate portion of the heating element (43) is separated from the insulator (56). 前記発熱体(43)の前記上側端よりも前記下側端を前記絶縁体(56)から離隔させたことを特徴とする請求項2記載の基板処理装置用電気ヒーター。 The electric heater for a substrate processing apparatus according to claim 2, wherein the lower end of the heating element (43) is separated from the insulator (56) with respect to the upper end. 前記発熱体(43)の上側端に折曲部(43a)を形成してこの折曲部(43a)を支持体(59)に掛止したことを特徴とする請求項2又は3記載の基板処理装置用電気ヒーター。 The substrate according to claim 2 or 3, wherein a bent portion (43a) is formed at an upper end of the heating element (43), and the bent portion (43a) is hooked on the support body (59). Electric heater for processing equipment. 前記折曲部(43a)が略直角に折り曲げられ、前記支持体(59)の掛止部(74)もこの折曲部(43a)を受け入れる略直角に形成されていることを特徴とする請求項4に記載の基板処理装置用電気ヒーター。 The bent portion (43a) is bent at a substantially right angle, and the latching portion (74) of the support (59) is also formed at a substantially right angle to receive the bent portion (43a). Item 5. The electric heater for a substrate processing apparatus according to Item 4. 前記掛止部(74)は折曲部(43a)が掛止される下壁部(61a)と下壁部(61a)に略平行で折曲部(43a)の上側への抜けを防止する上壁部(72b)と折曲部(43a)の水平方向への脱落を防止するための上壁部(62b)から垂下する横壁部(62a)とを備え、下壁部(61a)は上壁部(62b)及び横壁部(62a)とは分割可能であることを特徴とする請求項5に記載の基板処理装置用電気ヒーター。 The hooking portion (74) is substantially parallel to the lower wall portion (61a) and the lower wall portion (61a) on which the bent portion (43a) is hooked, and prevents the bent portion (43a) from coming out upward. An upper wall portion (72b) and a lateral wall portion (62a) hanging from the upper wall portion (62b) for preventing the bent portion (43a) from falling off in the horizontal direction are provided. The electric heater for a substrate processing apparatus according to claim 5, wherein the wall portion (62b) and the horizontal wall portion (62a) are separable. 前記発熱体(43)の上解放スリット(65b)における前記折曲部(43a)にこの上解放スリット(65b)間での発熱体(43)の短絡を防ぐ第一絶縁片(66)を介在させてあることを特徴とする請求項4〜6のいずれかに記載の基板処理装置用電気ヒーター。 A first insulating piece (66) for preventing a short circuit of the heating element (43) between the upper release slits (65b) is interposed in the bent part (43a) of the upper release slit (65b) of the heating element (43). The electric heater for a substrate processing apparatus according to claim 4, wherein the electric heater is used. 前記発熱体(43)の上側端を固定するための前記支持体(59)が、前記発熱体(43)の下解放スリット(65a)を貫通することを特徴とする請求項2〜7のいずれかに記載の基板処理装置用電気ヒーター。 The said support body (59) for fixing the upper end of the said heat generating body (43) penetrates the lower release slit (65a) of the said heat generating body (43), Any one of Claims 2-7 An electric heater for a substrate processing apparatus according to claim 1. 前記支持体(59)が前記発熱体(43)と前記絶縁体(56)との間に介在する絶縁片(68)を貫通することを特徴とする請求項8に記載の基板処理装置用電気ヒーター。 9. The electric for substrate processing apparatus according to claim 8, wherein the support (59) passes through an insulating piece (68) interposed between the heating element (43) and the insulator (56). heater. 前記発熱体(43)の下端側は下固定体(52)をスリット(11)に貫通させ、スリット(11)長手方向に移動自在で且つスリット(11)垂直方向の移動を規制する状態で絶縁体(56)に保持したことを特徴とする請求項2〜9のいずれかに記載の基板処理装置用電気ヒーター。 The lower end side of the heating element (43) is insulated in such a manner that the lower fixing body (52) passes through the slit (11), is movable in the longitudinal direction of the slit (11), and restricts movement in the vertical direction of the slit (11). The electric heater for a substrate processing apparatus according to any one of claims 2 to 9, wherein the electric heater is held by a body (56). 下側の発熱体(43)の上端を支持する支持体(59)に上側の発熱体(43)の下端を水平方向視で重ねてあることを特徴とする請求項2〜10のいずれかに記載の基板処理装置用電気ヒーター。 The lower end of the upper heating element (43) is overlapped with the support body (59) supporting the upper end of the lower heating element (43) in the horizontal direction, according to any one of claims 2 to 10. The electric heater for substrate processing apparatuses as described. 発熱体(43)の上端と下端との間に放熱側に対するオフセット距離を設けながら、発熱体(43)の一部を垂下させるように発熱体(43)の上部側に湾曲部(73)を形成したことを特徴とする請求項2〜11のいずれかに記載の基板処理装置用電気ヒーター。 A curved portion (73) is provided on the upper side of the heating element (43) so that a part of the heating element (43) is suspended while providing an offset distance to the heat dissipation side between the upper end and the lower end of the heating element (43). It formed, The electric heater for substrate processing apparatuses in any one of Claims 2-11 characterized by the above-mentioned. 発熱体(43)の上下方向中間部を絶縁体(56)とは反対側に突出するよう湾曲させたことを特徴とする請求項2〜11のいずれかに記載の基板処理装置用電気ヒーター。 The electric heater for a substrate processing apparatus according to any one of claims 2 to 11, wherein an intermediate portion in the vertical direction of the heating element (43) is curved so as to protrude to the side opposite to the insulator (56). 請求項2〜13のいずれかに記載の基板処理装置用電気ヒーターを備えた基板処理装置
The substrate processing apparatus provided with the electric heater for substrate processing apparatuses in any one of Claims 2-13
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