JP2006190832A - Control method, exposure method, method of manufacturing device, stage and exposure device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent the controlling jump at switching of a command value for controlling a counter mass and a vibration from occurring. <P>SOLUTION: The method of controlling a counter mass moving according to the momentum preservation law due to the action of a reaction caused by driving a controlled object on a reference plane, on the basis of a command value, comprises a first step of controlling the counter mass on the basis of a first command value obtained from the mass ratio of the controlled object to the counter mass when driving the controlled object at a first operating accuracy; and a second step of controlling the counter mass on the basis of a second command value when driving the controlled object at a second operating accuracy different from the first one. At switching over the first and second steps, the first command value continues the second one. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a control method, an exposure method, a device manufacturing method, a stage apparatus, and exposure.

  Conventionally, various exposure apparatuses have been used in lithography processes in the manufacture of semiconductor elements, liquid crystal display elements, and the like. In recent years, a step-and-repeat type reduction projection exposure apparatus (so-called stepper), a step-and-scan type scanning projection exposure apparatus (so-called scanning stepper), and the like are used relatively frequently.

  In this type of exposure apparatus, it is necessary to transfer a reticle pattern as a mask to a plurality of shot areas on a wafer. For this reason, the wafer stage is driven in a XY two-dimensional direction by a driving device including, for example, a linear motor. The reaction force generated by the driving of the wafer stage is, for example, a reference (for example, a floor surface or an apparatus) Processing is performed by mechanically escaping to a floor (ground) using a frame member provided on a base plate or the like (for example, see Patent Document 1).

  Further, for example, in the case of a scanning stepper, not only the wafer stage but also the reticle stage needs to be driven by a linear motor or the like in a predetermined scanning direction. In order to absorb the reaction force generated by driving the reticle stage, Employs a counter mass mechanism with respect to one axis in the scanning direction mainly using the law of conservation of momentum (see, for example, Patent Document 2). There is also known a scanning exposure apparatus provided with a counter mass (counter mass) and a correction device (such as a trim motor) for correcting the position of the counter mass on the wafer stage (see, for example, Patent Document 3). In addition, there is also a type in which a reaction force generated by the movement of the reticle stage is mechanically released to a reference, that is, a floor (ground) using a frame member (see, for example, Patent Document 4).

  In a conventional projection exposure apparatus, the reaction force of the stage that is released to the reference is attenuated by a vibration isolator such as a vibration isolation table (vibration isolation table), thereby causing the vibration of the projection optical system (projection lens) due to the reaction force. And stage vibration due to sneaking through the reference. However, although the reaction force of the stage that was released to the standard was attenuated, from the viewpoint of the level required in the current micromachining, it would give vibration to the projection optical system and the stage. . For this reason, in a scanning stepper that performs exposure while scanning a stage (and thus a wafer or a reticle), vibration caused by the reaction force causes a reduction in exposure accuracy.

  In contrast, when the counter mass is used to absorb the reaction force, the transmission of the reaction force can be almost completely prevented. However, with the conventional counter mass, the stage is moved in the direction opposite to the stage driving direction. A counter mass that moves by a distance proportional to the driving distance is used. For this reason, a stroke corresponding to (proportional to) the entire stroke of the stage must be prepared for the counter mass, which tends to increase the size of the exposure apparatus.

  Further, in the exposure apparatus including the counter mass and the correction device that corrects the position of the counter mass like the exposure device described in Patent Document 3, the position of the counter mass can be corrected by the correction device. The stroke of the counter mass can be shortened compared to the case where the correction device is not provided. Further, in the scanning exposure apparatus described in Patent Document 3, the main purpose is to prevent the occurrence of vibration, and the movement of the counter mass is allowed in any operation while allowing the movement of the counter mass according to the law of conservation of momentum. By trying to absorb the reaction force completely. In the scanning exposure apparatus described in Patent Document 3, the correction of the position of the counter mass is performed for the purpose of securing the stroke of the counter mass exclusively in the next operation. However, for example, when the exposure to the wafer is completed and the wafer stage is moved to the wafer exchange position, if the counter mass is allowed to move according to the law of conservation of momentum, the wafer is moved from the movement distance, that is, the position at the end of exposure. It was necessary to ensure a large stroke of the counter mass according to the distance to the exchange position. With this, it is difficult to effectively suppress the increase in size of the apparatus.

Therefore, in Patent Document 5, the counter mass is allowed to move according to the momentum conservation law in an area where the stage needs to be driven with high operation accuracy (hereinafter referred to as a high accuracy area), and other areas ( In the following, a technique for applying a thrust to the counter mass in the direction opposite to the moving direction according to the momentum conservation law is disclosed. According to this technique, when the stage is positioned in a high-precision area such as an exposure area, the counter mass is allowed to move in accordance with the momentum conservation law, so that the reaction force of the stage is completely absorbed. It is possible to prevent a reduction in exposure accuracy due to vibration due to the reaction force of the stage. In addition, when the stage is located in the low accuracy area, thrust is applied to the counter mass in the direction opposite to the moving direction according to the law of conservation of momentum. Can be small. In this way, the reaction force of the stage is completely absorbed only in some areas (high-precision areas), and the counter mass stroke is reduced in other areas (low-precision areas), thereby preventing a reduction in exposure accuracy. And it becomes possible to suppress the enlargement of an apparatus effectively.
JP-A-8-166475 JP-A-8-63231 JP 2002-208562 A JP-A-8-330224 JP 2004-140145 A

  By the way, like the technique disclosed in Patent Document 5, the counter mass is allowed to move according to the momentum conservation law in the high accuracy region, and the counter mass is moved according to the momentum conservation law in the low accuracy region. When thrust is applied in the direction opposite to the direction, the counter mass needs to be controlled based on different command values depending on the region where the stage is located.

  For this reason, when the stage moves from the high accuracy region to the low accuracy region and when the stage moves from the low accuracy region to the high accuracy region, the command value for controlling the counter mass is switched. In such a command value switching portion, a control jump is likely to occur, and if a control jump occurs, vibration may occur.

  The present invention has been made under such circumstances, and prevents occurrence of a control jump when a command value for controlling a counter mass (counter mass drive system) is switched, and vibration is generated. To prevent.

  In order to achieve the above object, the present invention adopts the following configuration corresponding to FIGS. 1 to 10 showing the embodiment. (However, the reference numerals in parentheses attached to each element are merely examples of the element and do not limit each element.)

  The control method of the present invention controls the counter mass (2) that moves according to the momentum conservation law by the action of the reaction force generated by driving the control object (1) on the reference plane based on the command value. A first step of controlling the counter mass based on a first command value obtained by a mass ratio between the control object and the counter mass when the control object is driven with a first operation accuracy. And a second step of controlling the counter mass based on a second command value when the control object is driven with a second operation accuracy different from the first operation accuracy, and the first step And the second step, the first command value and the second command value are made continuous.

In the control method of the present invention, the counter mass is controlled based on the first command value obtained by the mass ratio between the control object and the counter mass in the first step of driving the control object with the first operation accuracy. In the second step of driving the controlled object with a second operation accuracy different from the first operation accuracy, the control object is controlled based on the second command value. The first command value and the second command value are continuous when switching between the first step and the second step.
Therefore, in the first step, the counter mass is allowed to move in accordance with the momentum conservation law. In the second step, since the counter mass is controlled based on a second command value different from the first command value, thrust in the moving direction according to the momentum conservation law or the opposite direction is applied to the counter mass. The counter mass stroke changes. In the control method of the present invention, the first command value and the second command value are continuous at the time of switching between the first step and the second step. When switching from the state driven by the second driving accuracy to the state driven by the second operation accuracy, or when switching the controlled object from the state driven by the second operation accuracy to the state driven by the first operation accuracy It is possible to prevent the occurrence of control jumps and to prevent vibrations from occurring.

In the control method of the present invention, it is possible to employ a configuration in which the second command value is obtained by the pseudo mass ratio calculated by changing the apparent mass of the counter mass. .
By adopting such a configuration, when the first command value is a linear function, the second command value is also a linear function.
In addition, when changing the apparent mass of the counter mass, it is preferable to increase the apparent mass of the counter mass. By doing so, the stroke of the counter mass can be reduced.
Moreover, in the control method of this invention, the structure of changing the apparent mass of the said counter mass based on the stroke allowable range of the said counter mass can also be employ | adopted.
By adopting such a configuration, the stroke of the counter mass can be within the stroke allowable range.

In the control method of the present invention, a configuration in which the first operation accuracy is relatively high and the second operation accuracy is relatively low can be employed.
By adopting such a configuration, when the control object is driven with relatively high operation accuracy, the first step is performed, and when the control object is driven with relatively low operation accuracy. The second step is performed. For this reason, when the controlled object is driven with relatively high operation accuracy, the counter mass is allowed to move in accordance with the law of conservation of momentum, so that vibration does not occur and high operation accuracy is ensured. Is possible.

Next, an exposure method of the present invention is an exposure method for transferring a pattern formed on a mask (M) to an area on a photosensitive object (W), and is a mask stage (RST) on which the mask is placed or And / or a photosensitive object stage (WST) on which the photosensitive object is placed is at least a part of the control target, and the momentum is generated by the reaction force generated by driving the mask stage and / or the photosensitive object stage. The counter mass that moves according to the conservation law is controlled by the control method of the present invention.
According to such an exposure method of the present invention, since the counter mass is controlled by the control method of the present invention, it is possible to prevent occurrence of a control jump when the command value for controlling the counter mass is switched, The exposure method prevents the occurrence of vibration.

Next, the device manufacturing method of the present invention is characterized by using the exposure method of the present invention.
According to such a device manufacturing method of the present invention, since the exposure method of the present invention is used, the throughput of device manufacturing is improved.

  Next, the stage apparatus of the present invention includes a stage (RST, WST), a drive system (15, 20, 34) for driving the stage on a reference plane, and a reaction force generated when the stage is driven by the drive system. The counter mass (42A, 42B, 110) that moves according to the law of conservation of momentum by the action of the above, the counter mass drive system (106A, 108A, 106B, 108B) that drives the counter mass, and the stage with the first operation accuracy. When driving, the counter mass drive system is controlled based on the first command value obtained by the mass ratio between the stage and the counter mass, and the stage is operated with a second operation accuracy different from the first operation accuracy. The counter mass drive system based on the first command value and the second command value that is continuous at the time of switching And a controlling controlling device (22).

In the stage apparatus of the present invention having such a feature, when the stage is driven with the first operation accuracy, the first command value obtained by the counter mass driving system by the mass ratio between the stage and the counter mass by the control device. The counter mass drive system is controlled by the control device based on the second command value when the stage is driven with the second operation accuracy. In the stage device of the present invention, the second command value is continuous with the first command value at the time of switching.
Therefore, when the stage is driven with the first operation accuracy, the counter mass is allowed to move according to the law of conservation of momentum. Further, when the stage is driven with the second operation accuracy, the counter mass drive system is controlled based on the second command value different from the first command value. The counter mass stroke is changed by adding the vertical direction of movement or the opposite direction. In the stage apparatus of the present invention, since the second command value is continuous with the first command value at the time of switching, the stage is driven with the second operation accuracy from the state where the stage is driven with the first operation accuracy. Or when the stage is switched from the state where the stage is driven with the second operation accuracy to the state where the stage is driven with the first operation accuracy. Generation of vibration can be prevented.

In the stage device of the present invention, the second command value is a value obtained by the pseudo mass ratio calculated by changing the apparent mass of the counter mass, and the control device Based on the second command value, it is possible to adopt a configuration in which the counter mass drive system is controlled so that thrust is applied to the counter mass.
By adopting such a configuration, when the first command value is a linear function, the second command value is also a linear function.

In the stage device of the present invention, the second command value is a value calculated by increasing the apparent mass of the counter mass, and the control device is based on the second command value, A configuration in which the counter mass drive system is controlled so that thrust is applied to the counter mass in a direction opposite to the direction of motion according to the law of conservation of momentum may be employed.
By adopting such a configuration, the thrust of the counter mass when the stage is driven with the second operation accuracy is applied to the counter mass in the direction opposite to the direction of motion according to the momentum conservation law, so that the counter mass stroke is reduced. can do.

Further, in the stage apparatus of the present invention, the second command value is based on the pseudo mass ratio calculated by changing the apparent mass of the counter mass based on the stroke allowable range of the counter mass. It is also possible to adopt a configuration that is a required value.
By adopting such a configuration, the stroke of the counter mass can be within the stroke allowable range.

In the stage apparatus of the present invention, a configuration in which the first operation accuracy is a relatively high operation accuracy and the second operation accuracy is a relatively low operation accuracy can be employed.
By adopting such a configuration, when the stage is driven with relatively high operation accuracy, the counter mass is allowed to move in accordance with the law of conservation of momentum, so that vibration does not occur and high operation is achieved. It is possible to ensure accuracy.

Next, an exposure apparatus of the present invention is an exposure apparatus (100) for transferring a pattern formed on a mask to an area on a photosensitive object, the mask stage apparatus on which the mask is placed, and the photosensitive object being And a photosensitive object stage device (11) mounted thereon, and the stage device of the present invention is used as the mask stage device and / or the photosensitive object stage device.
According to the exposure apparatus of the present invention, since the stage apparatus of the present invention is used as the mask stage apparatus and / or the photosensitive object stage apparatus, the command value for controlling the counter mass drive system is switched. An exposure apparatus is obtained in which occurrence of control jumps is prevented and vibration is prevented.

  ADVANTAGE OF THE INVENTION According to this invention, it becomes possible to prevent that the control jump occurs when the command value for controlling the counter mass (counter mass drive system) is switched, and to prevent vibration. .

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, an embodiment of a control method, an exposure method, a device manufacturing method, a stage apparatus, and an exposure apparatus according to the present invention will be described with reference to the drawings.

(First embodiment)
FIG. 1 is a schematic diagram for explaining the control method of the present embodiment. In FIG. 1, reference numeral 1 denotes a control object that is driven on the reference plane, and reference numeral 2 denotes a counter mass that moves according to the law of conservation of momentum by the action of a reaction force generated by driving the control object 1. The control method of the present embodiment is a method for controlling the counter mass 2 based on a command value.

The controlled object 1 is driven in the left-right direction on the paper surface by a drive system (not shown). Then, the counter mass 2 is moved in the direction opposite to the drive direction of the control object 1 by the action of the reaction force generated by the drive of the control object 1.
Here, in order to drive the control object 1, if the thrust applied to the control object 1 is F, the thrust F is expressed by the following equation (1) based on the equation of motion. In the following equation (1), M1 represents the mass of the control object 1, and a1 represents the acceleration of the control object 1.

  In this case, a thrust -F is applied to the counter mass 2. This thrust -F is expressed by the following equation (2). In the following formula (2), M2 represents the mass of the counter mass 2, and a2 represents the acceleration of the counter mass 2.

  From the equations (1) and (2), it can be seen that the ratio of the acceleration of the control object 1 and the acceleration of the counter mass 2 can be obtained from the two mass ratios (see the following equation (3)). And the following Formula (4) is obtained by converting Formula (3) into a position dimension. In the following formula (4), x1 indicates the position of the control object 1, and x2 indicates the position of the counter mass 2.

  Here, if the stroke required for the control object 1 is L1, the stroke L2 required for the counter mass 2 is given by the following equation (5) from the equation (4).

As can be seen from the equation (5), for example, the stroke L2 of the counter mass 2 can be reduced by increasing the mass of the counter mass 2. However, it is difficult to actually increase the mass of the counter mass 2 in an exposure apparatus or the like. Therefore, as shown in the following equation (6), the apparent mass of the counter mass 2 is increased by applying a thrust F _comp to the counter mass 2 in the direction opposite to the motion direction according to the momentum conservation law, The stroke L2 of the counter mass 2 can be reduced.

As can be seen from the equation (6), the stroke L2 of the counter mass 2, that is, the position x2 of the counter mass 2 can be set to an arbitrary value by changing the thrust F _comp .

By the way, applying the thrust F _comp to the counter mass 2 leads to the thrust being released to the external environment, resulting in a slight vibration. That is, when the thrust F _comp is not applied to the counter mass 2 (when movement based on the mass ratio between the control object 1 and the counter mass 2 is allowed with respect to the counter mass 2), the control object Although the reaction force generated by driving 1 is almost completely absorbed by the movement of the counter mass 2, it is necessary to prepare a large stroke for the counter mass 2. On the other hand, when thrust F _comp is applied to the counter mass 2 (when the movement amount of the counter mass 2 is defined based on a pseudo mass ratio obtained by changing the apparent mass of the counter mass 2). Although the stroke of the counter mass 2 can be reduced, a slight vibration is generated.

In an exposure apparatus or the like, high operation accuracy is not required for the control object 1 in the entire region where the control object 1 is driven. Therefore, in a region where a relatively high operation accuracy is required with respect to the control object 1 (hereinafter referred to as a high accuracy region (a region where the control object is driven with the first operation accuracy)), the counter mass 2 On the other hand, the thrust F _comp is not applied, and the control object 1 is allowed to be driven with a relatively low operation accuracy (hereinafter referred to as a low accuracy region (the second control object is different from the first operation accuracy). In this case, the stroke of the counter mass 2 is reduced as a whole while preventing the occurrence of vibration in the high accuracy region by applying a thrust F _comp to the counter mass 2. It becomes possible.

Specifically, the counter mass 2 is controlled by the first command value X _cmd1 represented by the following equation (7) when the controlled object 1 is located in the high accuracy region (first 1 step). In the following formula (7), x _offset1 is an offset for matching the reference position of the counter mass 2 and the reference position of the control target 1. In an exposure apparatus or the like, the 0 position of the counter mass 2 does not necessarily correspond one-to-one with the 0 position of the control object 2. For this reason, adjustment is made by adding x _offset1 to the command value.

As can be seen from this equation (7), when the control object 1 is located in the high accuracy region, the counter mass 2 is determined by the mass ratio (Ma / Mb) between the control object 1 and the counter mass 2. Control is based on the first command value _cmd1 that is obtained. For this reason, the counter mass 2 is allowed to move in accordance with the law of conservation of momentum, and the reaction force generated by driving the control target 1 is almost completely absorbed. Therefore, when the counter mass 2 is controlled based on the first command value, it is possible to prevent vibrations from occurring. When the first command value _cmd1 is shown in a coordinate system in which the horizontal axis is the position of the controlled object 1 and the vertical axis is the position of the counter mass 2, it is represented as a graph A shown in FIG. In FIG. 2, the amount of change on the vertical axis is a stroke required for the counter mass 2.

On the other hand, when the control object 1 is located in the low accuracy region, the counter mass 2 is controlled by the second command value _cmd2 expressed by the following equation (8) (second step). In the following equation (8), α is a value obtained by changing the value of Mb in the equation (7), that is, the apparent mass of the counter mass 2 by adding a thrust F _comp to the counter mass 2. It is a pseudo mass ratio obtained by changing the upper mass. Then, as shown in FIG. 2, the pseudo mass ratio α is brought close to 0 (that is, a thrust F _comp is applied to the counter mass 2 in the direction opposite to the motion direction according to the law of conservation of momentum). And the stroke of the counter mass 2 can be reduced. Further, by adjusting α in the following equation (8) based on the allowable stroke range of the counter mass in the exposure apparatus or the like, the counter mass stroke can be adjusted to a desired value.

In the control method of the present embodiment, as shown in FIG. 2, the first command value _cmd1 (graph A) and the second command value _cmd2 (graph B) are the boundary between the high accuracy region and the low accuracy region. It is considered to be continuous. That is, the counter mass 2 is controlled based on the first command value _cmd1 when the controlled object 1 is driven with high operating accuracy, and based on the second command value _cmd2 when the controlled object 1 is driven with low operating accuracy. Thus, the counter mass 2 is controlled, and the first command value _cmd1 and the second command value _cmd2 are continuous when the operation accuracy of the control target 1 is switched. Therefore, according to the control method of the present embodiment, it is possible to prevent a control jump when the command value for controlling the counter mass 2 is switched and to prevent vibrations from occurring. Become.

In order to _make the first command value _cmd1 and the second command value _cmd2 continuous at the boundary between the high accuracy region and the low accuracy region, it is possible to adjust x _offset2 in Expression (8). Specifically, x _offset2 may be set so that the graph A and the graph B shown in FIG. 2 intersect at the boundary between the high accuracy region and the low accuracy region.

In the present embodiment, the first command value _cmd1 and the second command value _cmd2 are linear functions. However, the control method of the present invention is not limited to this. For example, the second command value can be a non-linear function. Even in such a case, by making the first command value and the second command value continuous at the time of switching, it is possible to prevent the occurrence of a control jump and to prevent the occurrence of vibration. Become.
Further, the low accuracy area may be further divided into a plurality of areas, and the counter mass 2 may be controlled based on different command values in each area. Even in this case, by making each command value continuous at the time of switching, it is possible to prevent a control jump from occurring at the time of switching and to prevent vibrations from occurring.

(Second Embodiment)
Next, as a second embodiment of the present invention, a stage apparatus and an exposure apparatus provided with a counter mass controlled by the control method of the first embodiment will be described. FIG. 3 shows a schematic configuration of the exposure apparatus 100 of the second embodiment. The exposure apparatus 100 is a step-and-scan type scanning exposure apparatus, that is, a so-called scanning stepper. As will be described later, in the present embodiment, a projection optical system PL is provided. In the following, the optical axis AX direction of the projection optical system PL is the Z-axis direction, and a reticle R as a mask in a plane perpendicular to the Z-axis direction. The direction in which the wafer W as the photosensitive object is relatively scanned will be described as the Y-axis direction, and the direction perpendicular to the Z-axis and the Y-axis will be described as the X-axis direction.

  The exposure apparatus 100 is a photosensitive device that moves in an XY two-dimensional direction with an illumination system IOP, a reticle stage RST as a mask stage on which the reticle R is mounted, a projection optical system PL, and a wafer W (photosensitive object) mounted thereon. A wafer stage apparatus 11 (stage apparatus, photosensitive object stage apparatus) having a wafer stage WST as an object stage, a control system thereof, and the like are provided.

The illumination system IOP includes, for example, a light source unit, an illuminance uniformizing optical system (including an optical integrator), a beam splitter, a collector, as disclosed in, for example, JP-A-9-320956 and JP-A-4-196513. An optical lens system, a reticle blind, an imaging lens system, etc. (all of which are not shown) are arranged on the reticle R by exposure illumination light (hereinafter simply referred to as “exposure light”) EL having a substantially uniform illuminance distribution. A rectangular (or arc-shaped) illumination area IAR is illuminated with uniform illuminance. Here, as the exposure light EL, for example, an ultraviolet emission line (g-line, i-line) from an ultra-high pressure mercury lamp, KrF excimer laser light (wavelength 248 nm), ArF excimer laser light (wavelength 193 nm), F ₂ Far ultraviolet light such as laser light (wavelength 157 nm) or vacuum ultraviolet light is used.

  The reticle stage RST is placed on the top plate 14 of the second column 12 constituting the main body column 10 described later. The top plate 14 also serves as a reticle base. Hereinafter, the top plate 14 is also referred to as “reticle base 14”.

  On reticle stage RST, reticle R is fixed, for example, by vacuum suction. Reticle stage RST can be finely driven two-dimensionally in a plane perpendicular to the Z-axis (in the X-axis direction and the Y-axis direction perpendicular to the X-axis and the rotation direction around the Z-axis perpendicular to the XY plane (θz direction)). It is configured.

  In addition, the reticle stage RST is scanned at a scanning speed designated in a predetermined scanning direction (here, the Y-axis direction) by a reticle driving unit 15 as a driving device configured on a reticle base 14 by a linear motor or the like. It is movable. The reticle stage RST has a moving stroke that allows the entire surface of the reticle R to cross at least the optical axis of the illumination system IOP.

  A movable mirror 18 that reflects a laser beam from a reticle laser interferometer (hereinafter referred to as “reticle interferometer”) 16 is fixed on the reticle stage RST, and the position of the reticle stage RST in the moving plane is determined by the reticle interferometer. 16 is always detected with a resolution of about 0.5 to 1 nm, for example. Here, actually, on the reticle stage RST, a moving mirror having a reflecting surface orthogonal to the scanning direction (Y-axis direction) and a moving mirror having a reflecting surface orthogonal to the non-scanning direction (X-axis direction) are provided. Corresponding to this, the reticle interferometer is also provided with a reticle X interferometer and a reticle Y interferometer, which are typically shown as the movable mirror 18 and the reticle interferometer 16 in FIG. For example, the end surface of reticle stage RST may be mirror-finished to form a reflecting surface (corresponding to the reflecting surface of movable mirror 18). Further, at least one retro-reflector may be used instead of the reflecting surface extending in the X-axis direction used for detecting the position of the reticle stage RST in the scanning direction (Y-axis direction in the present embodiment). Here, one of the reticle Y interferometer and the reticle X interferometer, for example, the reticle Y interferometer is a two-axis interferometer having two measurement axes, and the reticle stage RST is based on the measurement value of the reticle Y interferometer. In addition to the Y position, rotation in the θz direction can also be measured.

  Position information (or velocity information) of reticle stage RST from reticle interferometer 16 is sent to stage control system 20 and main control system 22 via this, and stage control system 20 responds to an instruction from main control system 22. Based on the position information of reticle stage RST, reticle stage RST is driven via reticle drive unit 15.

  The main body column 10 includes a first column 26 installed on the floor F of the clean room via a plurality of (for example, three) vibration isolation units 24 and a second column 12 provided on the first column 26. And.

  The first column 26 is composed of a plurality of (for example, three) columns 28 arranged in series on the top of each vibration isolation unit 24 and a lens barrel base plate 30 supported horizontally by these columns 28. Has been. In this case, the vibration isolation unit 24 insulates the micro vibration transmitted from the floor F to the main body column 10 including the lens barrel surface plate 30 at the micro G level.

  The second column 12 includes a plurality of (for example, three) leg portions 32 fixed to the upper surface of the first column 26, and the top plate (reticle base) 14 horizontally supported by the leg portions 32. It is constituted by.

  The projection optical system PL is inserted from above into an opening (not shown) formed in the central portion of the lens barrel base plate 30 and through a flange (not shown) provided in the lens barrel portion. Is supported by. Here, the projection optical system PL is a double-sided telecentric reduction system, and a refractive optical system comprising a plurality of lens elements arranged at a predetermined interval along the optical axis AX direction (Z-axis direction) is used. . The projection magnification of the projection optical system PL is, for example, 1/4, 1/5, or 1/6. For this reason, when the illumination area IAR portion on the reticle R is illuminated by the exposure light EL from the illumination system IOP, the illumination area IAR of the reticle R is passed through the projection optical system PL by the exposure light EL that has passed through the reticle R. A reduced image (partially inverted image) of the inner circuit pattern is formed in an exposure area IA that is conjugate to the illumination area IAR on the wafer W whose surface is coated with a photoresist.

  Further, an off-axis type alignment detection system ALG is installed in the vicinity of the projection optical system PL. As this alignment detection system ALG, for example, a target detection mark image formed on a light receiving surface by irradiating a target mark with a broadband detection light beam that does not sensitize a resist on a wafer and reflected from the target mark is not shown. An image processing type FIA (Filled Image Alignment) type alignment sensor that captures an image of each index using an imaging device (CCD) or the like and outputs the imaged signals is used. Based on the output of the alignment detection system ALG, it is possible to measure the positions of a reference mark on a reference mark plate, which will be described later, and an alignment mark on the wafer in the X and Y two-dimensional directions. In addition to the FIA system, the target mark is irradiated with coherent detection light to detect scattered light or diffracted light generated from the target mark, or two diffracted lights (for example, of the same order) generated from the target mark. Of course, it is possible to use an alignment sensor that detects the interference by interfering with each other singly or in an appropriate combination.

  Information from the alignment detection system ALG is A / D converted by an alignment control device (not shown), and a digitized waveform signal is processed to detect a mark position. This result is sent to the main control system 22.

  The wafer stage device 11 is disposed below the projection optical system PL. The wafer stage device 11 is composed of a wafer stage WST for holding the wafer W and a wafer drive device 34 as a drive device.

  Wafer stage WST includes an X-axis mover 112 shown in FIG. 4, a Z / tilt drive mechanism (not shown) mounted on X-axis mover 112, and the Z-axis direction and XY by Z / tilt drive mechanism. And a wafer table TB held so as to be capable of being finely driven in an inclined direction with respect to the surface. The X-axis movable element 112 and the Z / tilt driving mechanism will be further described later.

  A wafer W is fixed to the upper surface of the wafer table TB by electrostatic chucking or vacuum chucking via a wafer holder (not shown). Further, on the wafer table TB, various reference marks including reference marks for baseline measurement for measuring the distance from the detection center of the alignment detection system ALG to the optical axis of the projection optical system PL are formed. The mark plate FM is fixed.

  Further, as shown in FIG. 4, an X moving mirror 36X extending in the Y axis direction is provided on one end in the X axis direction (−X side end) on the upper surface of the wafer table TB, and one end in the Y axis direction (− A Y moving mirror 36Y extending in the X-axis direction is provided at the (Y side end). The outer surface side of these movable mirrors 36X and 36Y is a reflecting surface having a mirror finish. In FIG. 3, the movable mirrors 36 </ b> X and 36 </ b> Y are typically shown as the movable mirror 36. Instead of the movable mirror 36, for example, the end surface of the wafer table TB may be mirror-finished and used as a reflecting surface.

  An X-axis interferometer and a Y-axis interferometer (both not shown) are provided at positions facing the reflecting surfaces of the movable mirrors 36X and 36Y. From these X-axis interferometer and Y-axis interferometer, Are projected onto the reflecting surfaces of the movable mirrors 36X and 36Y, and the respective interferometers receive the reflected light. Thereby, the displacement from the reference position of each reflecting surface of the movable mirrors 36X and 36Y is measured, and the two-dimensional position of the wafer table TB (stage WST) is measured. In FIG. 3, an X-axis interferometer and a Y-axis interferometer are typically shown as a wafer interferometer 38.

  Next, the wafer drive device 34 will be described in detail with reference to FIGS.

  As shown in FIG. 4, this wafer drive device 34 is an X-axis linear motor device (hereinafter abbreviated as “X-axis motor device”) XM that drives wafer stage WST in the X-axis direction above wafer surface plate 40. , And a first Y-axis linear motor device (hereinafter abbreviated as “first Y-axis motor device”) YMA and a second Y-axis linear motor device (hereinafter referred to as “second Y-axis motor device”) that drive wafer stage WST and X-axis motor device XM. ") And YMB.

  Here, the first Y-axis motor device YMA (more specifically, a Y-axis stator 42A to be described later) is arranged on one side (+ Y side) on the + X side on the upper surface of the wafer base BS (+ Y side) and on the other side (−Y side). The frame bodies 44A and 46A fixed to the end portions are supported in a non-contact manner in a state where movement in the Z-axis direction and the X-axis direction is restricted. Further, the second Y-axis motor device YMB (more specifically, a Y-axis stator 42B described later) is provided on one side (+ Y side) on the −X side of the upper surface of the wafer base BS (+ Y side) and on the other side (−Y side). The frames 46B and 44B fixed to the end portions are supported in a non-contact manner in a state where movement in the Z-axis direction and the X-axis direction is restricted.

  The first Y-axis motor device YMA takes out a part of wafer stage WST and its driving device in FIGS. 4 and 4 and cuts a part thereof, as shown in FIG. (Counter mass) and a Y-axis movable element 48A that moves in the Y-axis direction along the Y-axis stator 42A while engaging with the Y-axis stator 42A.

  The Y-axis stator 42A is provided on the -Z side (lower side) of the magnetic pole unit 50A having the longitudinal direction in the Y-axis direction and the U-shaped XZ cross section, and the magnetic pole unit 50A, Plate-shaped Y guide members 54A and 56A provided on the −X side of each of the magnetic pole unit 52A and the magnetic pole units 50A and 52A having the same structure as the magnetic pole unit 50A, and having the Y-axis direction as the longitudinal direction, and the magnetic pole unit 50A , 52A and holding members 30A1 and 30A2 for holding the Y guide members 54A and 56A in a predetermined positional relationship.

  As shown in FIG. 5, the magnetic pole unit 50 </ b> A is disposed at a predetermined interval along the Y-axis direction on a yoke 62 having a U-shaped cross section (U-shape) and the upper and lower opposing surfaces of the yoke 62. And a plurality of field magnets 64. The magnetic pole surfaces of the field magnets 64 facing each other in the Z-axis direction have opposite polarities. For this reason, a magnetic flux mainly in the Z-axis direction is generated between the field magnets 64 facing each other in the Z-axis direction. Moreover, the magnetic pole surfaces of the field magnets 34 adjacent in the Y-axis direction have opposite polarities. For this reason, an alternating magnetic field is formed in the internal space of the yoke 62 along the X-axis direction.

  The magnetic pole unit 52A is configured similarly to the magnetic pole unit 50A.

  As shown in FIG. 5, the holding member 58A includes a fixing member 66A that fixes the magnetic pole units 50A and 52A and the Y guide members 54A and 56A in a predetermined positional relationship, and the fixing members 66A on both sides in the Z-axis direction ( An upper surface member 68A and a lower surface member 70A are sandwiched from above and below. On the upper surface of the upper surface member 68A, as shown in FIG. 6A, which is a sectional view taken along the line DD in FIGS. 5 and 4, the armatures are arranged at predetermined intervals along the Y-axis direction. An armature unit 72A having a coil is embedded, and an armature unit 74A similar to the armature unit 72A is embedded in the lower surface of the lower surface member 70A.

  As shown in FIG. 5, the holding member 60A includes a fixing member 76A, and an upper surface member 78A and a lower surface member 80A that sandwich the fixing member 76A in the vertical direction.

  The Y-axis stator 42A configured as described above is a vacuum preload type provided on the inner surface side (both inner surface side in the X-axis direction and both inner surface sides in the Z-axis direction) of the frame bodies 44A and 46A shown in FIG. It is supported in a non-contact manner by a static gas bearing device (hereinafter simply referred to as a “bearing device”) 82 (see FIG. 6A, but the bearing device provided on the frame 46A is not shown). . In other words, the Y-axis stator 42A is constrained in the X-axis direction and the Z-axis direction, but is not constrained in the Y-axis direction at all, so if a force in the Y-axis direction acts on the Y-axis stator 42A. According to the force, the Y-axis stator 42A moves along the Y-axis direction.

  The Y-axis movable element 48A includes a slide member 84A made of a flat plate member having a surface facing the Y-axis guide members 54A and 56A on the + X side, as comprehensively shown in FIGS. A frame-shaped member 86A having a rectangular YZ section, which is provided in a substantially central position on the + X side surface of the slide member 84A and is disposed in the space between the magnetic pole units 50A and 52A, and approximately ± Z directions from the frame-shaped member 86A Armature units 88A and 90A disposed at equidistant positions (positions corresponding to the internal spaces of the magnetic pole units 50A and 52A). In each of the armature units 88A and 90A, a plurality of armature coils are arranged at predetermined intervals along the X-axis direction.

  On the surface on the −X side of the slide member 84A, a bearing device similar to the bearing device 92B (see FIG. 5) provided on the slide member 84B constituting the Y-axis movable element 48B of the second Y-axis motor device YMB described later. (Not shown) is provided. By the static pressure of pressurized gas (for example, helium or nitrogen gas (or clean air), etc.) ejected from the bearing device to the Y guide members 54A and 56A constituting the Y-axis stator 42A described above, The Y-axis movable element 48A is not in contact with the Y-axis stator 42A through a clearance of about several μm in the X-axis direction.

  Also, a similar bearing device 94A and a bearing device (not shown) are respectively provided on the upper surface and the lower surface of the frame-shaped member 86A, and the lower surface of the magnetic pole unit 50A constituting the Y-axis stator 42A is provided from these bearing devices. In addition, due to the static pressure of the pressurized gas ejected to the upper surface of the magnetic pole unit 52A, the Y-axis movable element 48A is brought into non-contact with the Y-axis stator 42A through a clearance of about several μm in the Z-axis direction. ing.

  Further, in the center of the slide member 84A, an opening 96A similar to the opening 96B in the slide member 84B constituting the Y-axis movable element 48B of the second Y-axis motor device YMB shown in FIG. 5 (see FIG. 8). The opening 96A communicates with the hollow portion 98A of the frame-shaped member 86A.

  In the first Y-axis motor device YMA configured as described above, the current flowing through the armature coils constituting the armature units 88A and 90A and the magnetic pole units 50A and 52A constituting the Y-axis stator 42A are constituted. The Y-axis movable element 48A is driven in the Y-axis direction by the Lorentz force generated by the electromagnetic interaction with the magnetic field generated by the field magnet, and moves in the X-axis direction along the Y guide members 54A and 56A. At this time, the position of the acting point of the driving force in the Y-axis direction that acts on the Y-axis movable element 48A coincides with the position of the center of gravity of the Y-axis stator 42A. Further, the position of the X-axis direction and the Z-axis direction of the reaction point of the reaction force in the Y-axis direction that acts on the Y-axis stator 42A as the Y-axis mover 48A is driven is the center of gravity of the Y-axis stator 42A. It corresponds to the X-axis direction position and the Z-axis direction position.

  The magnitude and direction of the driving force in the Y-axis direction acting on the Y-axis mover 48A is determined by the current supplied to the armature coils of the armature units 88A and 90A by the main control system 22 via the stage control system 20. It is controlled by the waveform (amplitude and phase).

  The armature units 88A and 90A are supplied with a refrigerant for cooling the armature coils. The flow rate control of the refrigerant is also performed by the main control system 22.

As shown in FIG. 4, the second Y-axis motor device YMB has the same configuration as the first Y-axis motor device YMA described above, although it is rotationally symmetric. That is, the second Y-axis motor device YMB has the same configuration as the Y-axis stator 42B (counter mass), which is the same configuration as the Y-axis stator 42A constituting the first Y-axis motor device YMA, and the Y-axis mover 48A. Y-axis movable element 48B.

  That is, the Y-axis stator 42B includes magnetic pole units 50B and 52B similar to the magnetic pole units 50A and 52A, Y guide members 54B and 56B similar to the Y guide members 54A and 56A, and magnetic pole units 50B and 52B, Y Holding members 58B, 60B and the like for holding the guide members 54B, 56B in a predetermined positional relationship are provided.

  The holding member 58B provided at the −Y side end of the Y-axis stator 42B includes a fixing member 66B similar to the fixing member 66A, and an upper surface member that holds the fixing member 66B from both sides (up and down) in the Z-axis direction. 68B and a lower surface member 70B. An armature unit 72B similar to the aforementioned armature unit 72A is embedded in the upper surface of the upper surface member 68B, and an electric machine similar to the aforementioned armature unit 74A is embedded in the lower surface of the lower surface member 70B. The child unit 74B is embedded.

  The holding member 60B provided at the + Y side end of the Y-axis stator 18B has the same configuration as the holding member 60A described above. That is, a fixing member 76B and an upper surface member 78B and a lower surface member 80B that sandwich the fixing member 76B from above and below are provided.

  In addition, in the frame bodies 44B and 46B, a bearing device 82 is provided on the inner surface side in the same manner as the above-described frame bodies 44A and 46A (see FIG. 6B).

  As shown in FIG. 5, the Y-axis movable element 48B includes the slide member 84B configured in the same manner as the above-described slide member 84A, and the above-described Y-axis movable element 48B provided at a substantially central position on the −X side surface of the slide member 84B. A frame-shaped member 86B having the same configuration as the frame-shaped member 86A, and an armature unit having the same configuration as the above-described armature units 88A and 90A provided at substantially equal distances in the ± Z direction from the frame-shaped member 86B. 88B and 90B.

  A bearing device 92B is provided on the surface of the slide member 84B on the + X side, and a bearing device (not shown) similar to the above-described bearing device 94A is provided on the upper and lower surfaces of the frame-like member 86B. Yes.

  Further, as shown in FIG. 5, an opening 96B is formed at the center of the slide member 84B, and the opening 96B communicates with the hollow portion of the frame-shaped member 86B.

  Further, in the second Y-axis motor device YMB, as in the case of the first Y-axis motor device YMA, the current flowing through the armature coils constituting the armature units 88B and 90B and the magnetic pole unit constituting the Y-axis stator 42B, respectively. The Y-axis movable element 48B is driven in the Y-axis direction by the Lorentz force generated by the electromagnetic interaction between the magnetic fields generated by the field magnets constituting the respective 50B and 52B, and Y along the Y guide members 54B and 56B. Move in the axial direction. At this time, the position of the acting point of the driving force in the Y-axis direction acting on the Y-axis movable element 48B coincides with the position of the center of gravity of the Y-axis movable element 48B. Further, the position of the X-axis direction and the Z-axis direction of the reaction point of the reaction force in the Y-axis direction that acts on the Y-axis stator 42B as the Y-axis mover 48B is driven is the center of gravity of the Y-axis stator 42B. It corresponds to the X-axis direction position and the Z-axis direction position.

  Similarly to the case of the first Y-axis motor device YMA, the magnitude and direction of the driving force in the Y-axis direction acting on the Y-axis movable element 48B are determined by the main control system 22 via the stage control system 20 and the armature unit. It is controlled by the waveform (amplitude and phase) of the current supplied to the 88B and 90B armature coils.

  The armature units 88B and 90B constituting the second Y-axis motor device YMB are also supplied with a refrigerant for cooling the armature coils, similarly to the armature units 88A and 90A. The flow rate control of the refrigerant is also performed by the main control system 22.

  In the frame 44A corresponding to the above-described holding member 58A, as shown in FIG. 6A, positions facing the armature units 72A and 74A provided on the above-described upper surface member 68A and lower surface member 70A (that is, Magnetic pole units 102A and 104A comprising a magnetic member and a plurality of field magnets arranged at predetermined intervals in the Y-axis direction are provided on the upper and lower opposing surfaces of the frame 44A. Here, in the magnetic pole units 102A and 104A, the magnetic pole surfaces of the field magnets adjacent in the Y-axis direction have opposite polarities.

  Therefore, an alternating magnetic field is formed along the Y-axis direction in the space where the armature units 72A and 74A facing the magnetic pole units 102A and 104A are arranged.

  As a result, as shown in FIG. 6A, the armature unit 72A is a mover, and the magnetic force drive type moving coil linear motor (hereinafter referred to as “Y-axis trim motor (counter)” is used. 106A) and armature unit 74A as a mover, and magnetic force drive type moving coil type linear motor (hereinafter referred to as “Y-axis trim motor (counter mass)”. 108A) is configured.

  In the frame body 44B corresponding to the above-described holding member 58B, as shown in FIG. 6B when the holding member 58B and the frame body 44B are viewed from the + X direction, the electric machine provided on the upper surface member 68B and the lower surface member 70B. Magnetic pole units 102B and 104B comprising magnetic members and a plurality of field magnets arranged at predetermined intervals in the Y-axis direction are provided at positions facing the child units 72B and 74B (that is, the upper and lower opposing surfaces of the frame 44B). . Here, in the magnetic pole units 102B and 104B, the magnetic pole surfaces of the field magnets adjacent in the Y-axis direction have opposite polarities. Therefore, a periodic magnetic field is formed along the Y-axis direction in the space where the armature units 72B and 74B facing the magnetic pole units 102B and 104B are arranged. As a result, an electromagnetic force driven moving coil linear motor (hereinafter referred to as “Y-axis trim motor (counter)” is shown in FIG. 6B, in which the armature unit 72B is a mover and the magnetic pole unit 102B is a stator. 106B) and the armature unit 74B as a mover and a magnetic pole drive 104B as a moving coil type linear motor (hereinafter referred to as “Y-axis trim motor (counter mass)”. 108B) is configured.

  The X-axis direction position and the Z-axis direction position of the Y-axis direction driving force applied to the Y-axis stator 42A by the Y-axis trim motors 106A, 108A are the X-axis direction position of the center of gravity of the Y-axis stator 42A, and It corresponds to the position in the Z-axis direction. The X-axis direction position and the Z-axis direction position of the Y-axis direction driving force applied to the Y-axis stator 42B by the Y-axis trim motors 106B and 108B are the X-axis direction of the center of gravity of the Y-axis stator 42B. It corresponds to the position and the Z-axis direction position.

  The magnitude and direction of the driving force in the Y-axis direction applied to the Y-axis stators 42A and 42B by the Y-axis trim motors 106A, 108A, 106B, and 108B are determined by the main control system 22 via the stage control system 20. It is controlled by the waveform (amplitude and phase) of the current supplied to the armature coils of the slave units 72A, 74A, 72B, and 74B.

  Returning to FIG. 4, the X-axis motor device XM includes an X-axis stator 110 and an X-axis movable element 112.

  As shown in FIG. 7, the X-axis stator 110 (counter mass) has a longitudinal direction in the X-axis direction, and a plurality of armature coils are arranged at predetermined intervals along the X-axis direction. And a pair of X guide members 118 and 120 provided on one side and the other side in the Y-axis direction of the coil plate 116, respectively. Here, on the + X side, the armature coils are arranged up to the vicinity of the + X side ends of the X guide members 118 and 120. On the −X side, the end portions of the X guide members 118 and 120 are − It is in a state of protruding in the X direction.

  Further, as shown in FIG. 7, the X guide member 118 includes an iron plate holding portion 122 </ b> A in which the dimension in the vertical direction (Z-axis direction) is somewhat narrowed at one end and the other end in the longitudinal direction. 122B is provided. Iron plates 124A and 124B are embedded in the surfaces on the −Y side of these iron plate holding portions 122A and 122B, respectively.

  In addition, the X guide member 120 is provided with iron plate holding portions 126A and 126B, each of which has a narrower vertical dimension (Z-axis direction) at one end and the other end in the longitudinal direction. Iron plates 124C and 124D (the iron plate 124D in the iron plate holding member 126B is not shown in FIG. 7, refer to FIG. 8) are embedded in the surfaces on the + Y side of these iron plate holding portions 126A and 126B, respectively.

  In addition, as shown in FIG. 5, the ends on the one side and the other side in the longitudinal direction of the X-axis stator 110 are respectively formed on the slide members 84A and 84B constituting the Y-axis movers 48A and 48B. It is inserted into the frame-shaped members 86A and 86B through the openings 96A (see FIG. 8) and 96B.

  FIG. 8 is a view showing the X-axis motor device XM and the Y-axis movers 48A and 48B along a plane parallel to the XY plane at a position slightly above the center in the height direction, with a part thereof omitted. . As can be seen from FIG. 8, electromagnet groups 126A, 126C, 126B, and 126D are fixed to the inner side walls of the frame-shaped member 86A and the frame-shaped member 86B that respectively constitute the Y-axis movable elements 48A and 48B. These electromagnet groups 126A, 126C, 126B, and 126D face the iron plates 124A, 124C, 124B, and 124D embedded in the X-axis direction end portion of the X-axis stator 110, and the iron plates 124A and 124C. , 124B, 124D and the opposing electromagnet groups 126A, 126C, 126B, 126D, the X-axis stator 110 is restrained in a non-contact manner in the Y-axis direction. On the other hand, since the X-axis stator 110 is not restrained at all in the X-axis direction, if a force in the X-axis direction acts on the X-axis stator 110, the X-axis stator 110 is changed according to the force. It moves along the direction. The individual magnetic forces in the electromagnet groups 126A, 126C, 126B, and 126D are controlled by the main control system 22 controlling currents supplied to the electromagnet groups 126A, 126C, 126B, and 126D via the stage control system 20, respectively. Is done by.

  In addition, by individually controlling the magnetic force between the iron plates 124A, 124C, 124B, and 124D and the opposing electromagnet groups 126A, 126C, 126B, and 126D, the X-axis stator 110 and the wafer W (wafer stage WST) are controlled. Can be finely driven in the θz direction.

  As shown in FIG. 7, the frame-shaped member 86A includes a plurality of field magnets arranged at predetermined intervals along the X-axis direction at positions facing the upper surface of the armature unit 114. A magnet group 128A and a magnet group (not shown) made up of a plurality of field magnets arranged at predetermined intervals along the X-axis direction are arranged at positions facing the lower surface of the armature unit 114. In addition, in the magnet group 128A and the magnet group (not shown) facing the lower surface of the armature unit 114, the polarities of the magnetic pole surfaces of the opposing field magnets are opposite to each other. As a result, an electromagnetic force-driven moving coil linear motor (hereinafter referred to as “X-axis trim motor” for convenience) that drives the X-axis stator 110 in the X-axis direction by the armature unit 114 and the magnetic pole unit composed of the magnet group 128A and the like. (Referred to as “counter mass drive system”).

  The Y-axis position and the Z-axis position of the X-axis direction driving force applied to the X-axis stator 110 by the X-axis trim motor are the Y-axis position and the Z-axis position of the center of gravity of the X-axis stator 110. It matches the axial position. The magnitude and direction of the driving force in the X-axis direction by the X-axis trim motor is determined by the current supplied from the main control system 22 to the armature coil that forms part of the armature unit 114 via the stage control system 20. It is controlled by the waveform (amplitude and phase).

  Further, floating members 130A and 130B each having a bearing device (not shown) for maintaining a clearance with respect to the wafer surface plate 40 are provided below the X guide members 118 and 120 near both ends in the X-axis direction. It has been. The floating members 130A and 130B, and hence the X-axis stator 110, by the static pressure of the pressurized gas ejected from the bearing devices provided on the floating members 130A and 130B to the upper surface of the wafer surface plate 40, The wafer base BS is levitated and supported through a clearance of about several μm.

  In the X-axis stator 110, the armature unit 114 is fixed slightly below the center in the Z-axis direction of the X guide members 118 and 120, and the position of the center of gravity of the X-axis stator 110 in the Z-axis direction is It matches the position of the center of gravity of the Y-axis stator 42A described above in the Z-axis direction.

  Returning to FIG. 7, the X-axis movable element 70 is arranged on the magnet holding member 132 having a rectangular frame shape in the YZ section and the inner upper surface of the magnet holding member 132, and field magnets are arranged at predetermined intervals in the X-axis direction. A magnetic pole unit (not shown) similar to the magnetic pole unit 134 disposed on the inner lower surface of the magnetic holding member 132, and an upper plate having a substantially square shape in plan view provided on the upper side of the magnet holding member 132 136 and a center-of-gravity point position adjusting member 138 provided on the lower side of the magnet holding member 132. The X-axis stator 110 described above is inserted into the internal space of the magnet holding member 132.

  The magnetic pole unit 134 includes a magnetic member fixed on the inner upper surface of the magnet holding member 132, and a plurality of field magnets (all shown) arranged at predetermined intervals along the X-axis direction on the lower surface of the magnetic member. Z)). At this time, the magnetic pole surface of each field magnet faces the upper surface of the armature unit 114. The magnetic pole surfaces of the field magnets adjacent in the X-axis direction have opposite polarities.

  A magnetic pole unit (not shown) fixed to the inner lower surface of the magnet holding member 132 is configured in the same manner as the magnetic pole unit 134 described above, and in this magnetic pole unit and the magnetic pole unit 134, the fields facing each other in the Z-axis direction. The magnetic pole surfaces between the magnets have opposite polarities. For this reason, an alternating magnetic field is formed along the X-axis direction in the space between the magnetic pole unit 134 and a magnetic pole unit (not shown) facing the magnetic pole unit 134 via the coil plate 116.

  A plurality of bearing devices (not shown) are arranged on the bottom surface of the center-of-gravity point position adjusting member 138, and the static pressure of the pressurized gas ejected to the upper surface of the wafer surface plate 40 causes the wafer surface plate 40 to move. The X-axis movable element 112 is levitated and supported through a clearance of about several μm.

  Similarly, a bearing device (not shown) is also provided on the surface facing the Y-axis direction inside the magnet holding member 132, and with respect to the outer surfaces of the X guide members 118 and 120 constituting the X-axis stator 110. It is held in a non-contact manner through a clearance of about several μm. By maintaining this clearance constant, the X-axis movable element 112 and the later-described θz rotation (yawing) of the wafer stage WST when the X-axis movable element 112 is driven in the X-axis direction by the X-axis linear motor are prevented. It can be prevented.

  The stage control system 20 in FIG. 3 performs the pressure and flow rate of the pressurized gas from the bearing device provided on the X-axis movable element 112 in accordance with an instruction from the main control system 22. . The same control is performed for the bearing devices described so far.

  The wafer table TB is mounted on the upper surface of the X-axis movable element 112 via a Z / tilt drive mechanism (not shown).

  The Z / tilt driving mechanism is disposed on the upper plate 136 constituting the X-axis movable element 112 at a position that is substantially the apex of an equilateral triangle, supports the wafer table TB, and is independently small in the Z-axis direction. It is configured to include three actuators (for example, a voice coil motor) to be driven. Accordingly, the wafer table TB is slightly driven by the Z / tilt driving mechanism in the three-degree-of-freedom directions of the Z-axis direction, the θx direction (the rotation direction around the X axis), and the θy direction (the rotation direction around the Y axis). It is like that. The driving of the Z / tilt driving mechanism is controlled by the stage control system 20 based on an instruction from the main control system 22. The wafer table TB may be finely movable in six degrees of freedom including the X-axis direction, the Y-axis direction, and the θz direction (rotation direction around the Z-axis).

  In this embodiment, the Y-axis direction position and the Z-axis direction position of the center of gravity of wafer stage WST including X-axis movable element 112, wafer table TB, and the like are the Y-axis of the center of gravity of X-axis stator 110. It coincides with the direction position and the Z-axis direction position.

  In the X-axis motor device XM configured as described above, the current flowing through the armature coil constituting the armature unit 114 and the magnetic field generated by the field magnet constituting the magnetic pole unit 134 constituting the X-axis mover 112 and the like. The X-axis movable element 112 is driven in the X-axis direction by the Lorentz force generated by electromagnetic interaction with the X-axis, and moves in the X-axis direction along the X guide members 118 and 120. At this time, the position of the acting point of the driving force in the X-axis direction that acts on the X-axis movable element 112 coincides with the position of the center of gravity of the X-axis movable element 112. In addition, the Y-axis direction position and the Z-axis direction position of the reaction point of the X-axis direction reaction force acting on the X-axis stator 110 as the X-axis mover 112 is driven are the center of gravity of the X-axis stator 110. It corresponds to the Y-axis direction position and the Z-axis direction position.

  The magnitude and direction of the driving force in the X-axis direction acting on the X-axis movable element 112 is determined by the waveform of the current supplied from the main control system 22 to the armature coil of the armature unit 114 via the stage control system 20 ( (Amplitude and phase).

  The armature unit 114 is supplied with a cooling refrigerant for cooling the armature coil. The flow rate control of the refrigerant is also performed by the main control system 22.

  Next, the operation (exposure method) by the exposure apparatus 100 of the present embodiment configured as described above is an example when the wafer W is subjected to exposure processing of the second layer (second layer) and subsequent layers. Let me explain.

  First, reticle R is loaded on reticle stage RST by a reticle loader (not shown), and then reticle alignment and baseline measurement are performed. In such reticle alignment and baseline measurement, the main control system 22 controls the wafer driving device 34 via the stage control system 20 to move the wafer stage WST two-dimensionally. In such a two-dimensional movement of wafer stage WST, stage control system 20 responds to an instruction from main control system 22 based on position information (or speed information) of wafer stage WST from wafer interferometer 38. The waveform of the current supplied to the Y-axis drive armature units 88A, 90A, 88B, 90B of 34 first and second Y-axis motor devices YMA, YMB, and the armature unit 114 of the X-axis motor device XM Controls the waveform of the current supplied to the armature coil.

  When the above reticle alignment and baseline measurement are completed, wafer W is subsequently loaded onto wafer stage WST by a wafer loader (not shown). When loading the wafer W, the wafer stage WST moves to the loading position. The movement control of the wafer stage WST is performed in the same manner as in the reticle alignment described above.

On the loaded wafer W, as shown in FIG. 9, a plurality of shot areas S _{i, j} as exposure areas (partition areas) are arranged in a matrix, and each shot area S _{i, j} It is assumed that a chip pattern is formed by exposure and development in the process of the previous layer, and a fine alignment mark for wafer alignment is attached.

  Next, fine alignment is performed by an enhanced global alignment (EGA) method that calculates the array coordinates of shot areas on the wafer W by statistical calculation such as a least square method. In the fine alignment process, when the fine alignment mark is imaged, the wafer stage WST is moved in order to put a predetermined fine alignment mark in the imaging range of the alignment detection system ALG. This is performed in the same manner as in the above-described reticle alignment or the like. The fine alignment by the EGA method is disclosed in, for example, Japanese Patent Application Laid-Open No. 61-44429.

Next, each shot area on the wafer W is exposed by the step-and-scan method. Note that the exposure order of the shot areas S _{i, j} is as shown in FIG. 9 and starts from the shot areas S _1,1 and proceeds in the row direction (+ X direction) sequentially. When the exposure of the last shot area _S1,7 in the first row is completed, the process proceeds to the first shot area _S2,9 in the second row. And it progresses sequentially in the row direction (-X direction) opposite to the row direction of the first row. Thereafter, each time a row is changed, exposure is sequentially performed up to the final shot area while proceeding in a row direction opposite to the advance direction in the previous row.

  9 indicate the scanning direction of the wafer W by the exposure area IA in each shot area. In other words, in the present embodiment, it is assumed that a so-called alternate scanning method is employed in which the scanning direction is reversed every time the exposure order advances. Actually, since the exposure area IA is fixed and the wafer W moves, the wafer W actually moves in the direction opposite to the solid line (including dotted line) arrow in FIG. 9 as the exposure order of the shot areas advances. To do.

In the exposure process, first, the main control system 22 controls the wafer drive device 34 via the stage control system 20 based on the fine alignment result and the position information (or velocity information) from the wafer interferometer 38. Then, the wafer stage WST is moved, and the wafer W is moved to a scanning start position (acceleration start position) for exposure of the first shot areas _S1,1 of the wafer W.

  Next, stage control system 20 starts relative movement of reticle R and wafer W, that is, reticle stage RST and wafer stage WST, in the Y-axis direction in response to an instruction from main control system 22. When both stages RST and WST reach their respective target scanning speeds and reach a constant speed synchronization state, the pattern area of the reticle R starts to be illuminated by illumination light from the illumination system IOP, and scanning exposure is started. The relative scanning is performed by the stage control system 20 controlling the reticle driving unit and the wafer driving device 34 (not shown) while monitoring the measurement values of the wafer interferometer 38 and the reticle interferometer 16 described above.

The stage control system 20 synchronously controls the reticle stage RST and the wafer stage WST via the reticle driving unit and the wafer driving device 34. At this time, particularly at the time of the scanning exposure described above, the moving speed V _W of the Y-axis direction of the moving velocity V _R and the wafer stage WST in the Y-axis direction of the reticle stage RST, projection magnification (1/4 of the projection optical system PL Alternatively, the synchronization control is performed so that the speed ratio is maintained according to 1/5 times.

Then, different areas of the pattern area of the reticle R are sequentially illuminated with illumination light, and the illumination of the entire pattern area is completed, thereby completing the scanning exposure of the first shot areas S ₁ , 1 on the wafer W. Thereby, the pattern of the reticle R is reduced and transferred to the first shot region _S1,1 via the projection optical system PL. After the scanning exposure is finished, irradiation of the pattern area of the reticle R with illumination light is stopped.

  During the synchronous movement in the scanning exposure as described above, the movement of wafer stage WST (and thus wafer W) is performed by a Y-axis movable element 48A by first and second Y-axis motor apparatuses YMA and YMB of wafer drive unit 34. , 48B.

As described above, when the scanning exposure of the first shot region _S1,1 is completed, the stage control system 20 controls the wafer driving device 34 based on an instruction from the main control system 22 to change the wafer stage WST, for example, accordance U-shaped path as indicated by the dotted line (or U-shaped or V-shaped paths) 9, a wafer W (in this case, the second shot S _{1, 2)} next shot area scanning exposure A stepping operation is performed between shot areas that move to the start position. At the time when this stepping operation is completed, the acceleration operation of wafer W (wafer stage WST) has been completed, and wafer W has a velocity only in the Y-axis direction. The stepping operation between shot areas will be further described later.

Then, scanning exposure of the second shot areas S _{1 and 2} is performed in the same manner as in the case of the first shot areas S _{1 and} 1 except that the moving directions of the wafer W and the reticle R are opposite.

  Thereafter, the above-described step operation and scanning exposure operation are repeated, and scanning exposure of the shot area in the first row is sequentially executed.

When the scanning exposure of the last shot areas S _{1 and 7} in the first row is completed, the stage control system 20 controls the wafer drive unit 34 based on an instruction from the main control system 22 to move the wafer stage WST. Then, the movement operation between the lines is performed to move to the scanning start position (acceleration start position) for exposure of the first shot areas S _{2 and 9} in the second line.

  Subsequently, also in the second row, scanning exposure of each shot region is executed in the same manner as in the first row, except that the exposure order of the shot regions proceeds in the −X direction. Thereafter, scanning exposure of each shot area up to the last row (seventh row) is executed in the same manner as in the first and second rows.

As described above, when the scanning exposure for the final shot areas _{S8, 1} on the wafer W is completed, the wafer W is unloaded from the wafer stage WST by an unloader (not shown). When unloading wafer W, wafer stage WST moves to the unload position. In this way, a series of exposure processes relating to one wafer W is completed. In the present embodiment, the wafer stage WST moves without stopping at the scanning start position of each shot area during the wafer exposure operation by the step-and-scan method.

  In accordance with each operation during the exposure process, when the wafer stage WST is driven in the Y-axis direction, the first and second Y-axis motor devices YMA, YMA, Y are controlled by the stage control system 20 in accordance with an instruction from the main control system 22. Current control is performed so that the driving forces applied to the Y-axis movable elements 48A and 48B by YMB have the same magnitude and the same direction. In this case, since the Y-axis movers 48A and 48B of the first and second Y-axis motor devices YMA and YMB are restrained in a non-contact manner in the X-axis direction and the Z-axis direction as described above, the first and second The Y-axis movable elements 48A and 48B are stably driven by the 2Y-axis motor devices YMA and YMB.

  Here, in the present embodiment, the main control system 22 obtains the two-dimensional position of the wafer stage WST from the stage control system 20. When wafer stage WST is located in the exposure area (area where wafer stage WST can exist during the exposure process), main control system 22 (control device) performs wafer stage WST and X-axis stator 110. The Y-axis trim motors 106A, 108A, 106B, and 108B are controlled based on a command value (first command value) obtained from the mass ratio of the Y-axis movers 48A and 48B and the Y-axis stators 42A and 42B. To do. That is, when the Y axis stators 42A and 42B of the exposure apparatus 100 of the present embodiment are made to correspond to the counter mass 2 in the first embodiment, the wafer stage WST and the X axis fixed of the exposure apparatus 100 of the present embodiment. The child 110 and the Y-axis movers 48A and 48B correspond to the control object 1 of the first embodiment.

  In this case, as a result of driving the Y-axis movers 48A and 48B by the first and second Y-axis motor devices YMA and YMB, the Y-axis stators 42A and 42B are directed in the direction opposite to the drive direction of the Y-axis movers 48A and 48B. The Y-axis stators 42A and 42B move due to the reaction force. In the exposure apparatus 100 of the present embodiment, the main control system 22 (control apparatus) includes wafer stage WST, X-axis stator 110 and Y-axis movers 48A and 48B, Y-axis stators 42A and 42B, In order to control the Y-axis trim motors 106A, 108A, 106B, and 108B based on the command value (first command value) obtained by the mass ratio of the two, the momentum conservation law for the Y-axis stators 42A and 42B as the counter mass Movement is allowed. As a result, the reaction force acting on the Y-axis stators 42A and 42B is almost completely absorbed. Therefore, the occurrence of vibration due to the reaction force caused by driving the Y-axis movable elements 48A and 48B, that is, the wafer stage WST in the Y-axis direction, is almost completely prevented in the exposure region (high accuracy region).

  In driving the wafer stage WST in the X-axis direction, the driving force applied to the X-axis movable element 112 by the X-axis motor XM by the stage control system 20 in accordance with an instruction from the main control system 22 is a desired magnitude. Current control is performed so as to be in the right direction.

  When wafer stage WST is located in the exposure area, main control system 22 is based on a command value (first command value) obtained by a mass ratio between wafer stage WST and X-axis stator 110. To control the above-mentioned X-axis trim motor. That is, when the X-axis stator 110 of the exposure apparatus 100 of the present embodiment is made to correspond to the counter mass 2 in the first embodiment, the wafer stage WST of the exposure apparatus 100 of the present embodiment is the first embodiment. This corresponds to the control object 1.

  In this case, as a result of driving the X-axis movable element 112 by the X-axis motor device XM, a reaction force in the direction opposite to the driving direction of the X-axis movable element 112 is generated in the X-axis stator 110, and the reaction force is applied. As a result, the X-axis stator 110 moves. In the exposure apparatus 100 of the present embodiment, the main control system 22 performs the above-described X-axis trim based on the command value (first command value) obtained from the mass ratio between the wafer stage WST and the X-axis stator 110. In order to control the motor, the X-axis stator 110 is allowed to move according to the momentum conservation law. As a result, the reaction force acting on the X-axis stator 110 is almost completely absorbed. Therefore, the occurrence of vibration due to the reaction force caused by driving the X-axis movable element 112, that is, the wafer stage WST, in the X-axis direction is almost completely prevented in the exposure region (high accuracy region).

  By the way, during the series of operations described above, for example, when loading or unloading the wafer with respect to the wafer stage WST, the wafer loading position and the wafer alignment start position (of the wafer mark or reference mark by the alignment detection system ALG). As for the wafer stage WST, the operation accuracy as high as that of the exposure region is not required between the detection position and the wafer unload position and the exposure end position.

Therefore, in the exposure apparatus 100 of the present embodiment, the main control system 22 performs the wafer stage WST and the X-axis stator 110 in a region (low accuracy region) where the operation accuracy as high as the exposure region is not required for the wafer stage WST. And a command value (second command value) obtained by a mass ratio (pseudo mass ratio) between the Y-axis movers 48A and 48B and the Y-axis stators 42A and 42B having an increased apparent mass. Based on this, the Y-axis trim motors 106A, 108A, 106B, and 108B are controlled. This makes it possible to reduce the strokes of the Y-axis stators 42A and 42B in a region where the operation accuracy is not as high as that of the exposure region with respect to wafer stage WST. As described in the first embodiment, when the apparent mass of the Y-axis stators 42A and 42B is increased, the Y-axis trim motors 106A, 108A, 106B, and 108B are moved according to the momentum conservation law. What is necessary is just to apply a thrust with respect to the Y-axis stators 42A and 42B in the opposite direction.
Further, in the exposure apparatus 100 of the present embodiment, in the region where the operation accuracy as high as the exposure region is not required for the wafer stage WST, the main control system 22 increases the apparent mass with the wafer stage WST. The above-described X-axis trim motor is controlled based on a command value (second command value) obtained by a mass ratio (pseudo mass ratio) between the shaft stator 110 and the shaft stator 110. As a result, the stroke of the X-axis stator 110 can be reduced in a region where the operation accuracy as high as the exposure region is not required with respect to wafer stage WST. As described in the first embodiment, when the apparent mass of the X-axis stator 110 is increased, the X-axis is fixed in the direction opposite to the direction of movement according to the momentum conservation law by the X-axis trim motor. What is necessary is just to apply a thrust with respect to the child 110.
As described above, according to the exposure apparatus 100 of the present embodiment, the strokes of the Y-axis stators 42A and 42B and the stroke of the X-axis stator 110 can be reduced, so that the exposure apparatus 100 can be downsized. It becomes.

In the exposure apparatus 100 of the present embodiment, when the wafer stage WST moves from the exposure area to an area where high operation accuracy is not required for the wafer stage WST from the exposure area as in the first embodiment, Alternatively, when wafer stage WST moves from an area where higher operation accuracy is not required for wafer stage WST to the exposure area, the command values for controlling Y-axis trim motors 106A, 108A, 106B, 108B Is continuous. Similarly, command values for controlling the X-axis trim motor are also continuous.
For this reason, when wafer stage WST moves from an exposure area to an area where higher operation accuracy is not required for wafer stage WST, or an area where exposure operation is not required for wafer stage WST. As a result, it is possible to prevent a control jump from occurring when the wafer stage WST moves from the exposure area to the exposure area, and it is possible to prevent vibrations from occurring.

  In this embodiment, since the X-axis stator and the Y-axis stator are counter masses that absorb the reaction force of the wafer stage, the wafer stage can be obtained without preparing a counter mass separately from the wafer stage. It is possible to absorb the vibration caused by the reaction force generated by the driving of. For this reason, it is possible to reduce the footprint of the entire exposure apparatus.

  In the above-described embodiment, the case where the second layer (second layer) and subsequent layers are exposed to the wafer has been described. However, the present invention is not limited to this, and wafer alignment (search alignment, fine alignment) is performed. The same effect as that of the above-described embodiment is also obtained for the exposure processing of the first layer (first layer) of the wafer, which is performed in the same manner as the exposure processing of the second layer (second layer) and the subsequent layers except that it is not performed. Obtainable.

  Whether wafer stage WST is driven with the first command value with the first operation accuracy or the second command value with the second operation accuracy depends on the position of wafer stage WST (current position or target). However, the present invention is not limited to this. It can be set as appropriate according to various sequences such as an exposure sequence set by the exposure apparatus 100 and a measurement sequence. For example, even when wafer stage WST is located in the exposure region, the first operation accuracy and the second operation accuracy may be switched within the region. If the target position of wafer stage WST is set in advance according to the elapsed time (time axis) in various sequences, main control system 22 moves wafer stage WST to the first position according to the elapsed time. It is only necessary to switch between driving with the above operating accuracy or driving with the second operating accuracy, and setting the first command value and the second command value to be continuous at that time.

  Although not particularly mentioned in the above description for simplification of description, the wafer driving device includes Y-axis motor devices YMA and YMB as a pair of left and right motors for driving wafer stage WST in the Y-axis direction. The Y-axis stators 42A and 42B as counter masses are provided individually corresponding to the Y-axis motor devices YMA and YMB. However, the present invention is not limited to such a configuration. For example, the Y-axis stators 42A and 42B may be installed on a common member, and both may be integrated to constitute a single counter mass. Further, since the position of the center of gravity of the above-mentioned movable part including wafer stage WST differs according to the position of wafer stage WST in the X-axis direction, main drive system 22 is used when driving wafer stage WST in the Y-axis direction accurately. Controls the Y-axis stators 42A and 42B individually during the transfer operation sequence in consideration of thrust distribution to the Y-axis motor devices YMA and YMB according to the position of the wafer stage WST in the X-axis direction. It's also good. In such a case, the displacements of the Y-axis stators 42A and 42B during the exposure time are plotted on an orthogonal coordinate system with the time axis as the horizontal axis, and the speed corresponding to the speed obtained by approximating the least squares is fixed to the Y-axis. It is desirable to give to the children 42A and 42B.

  In the present embodiment, the mechanism for absorbing the reaction force of wafer stage WST is configured to use the stator of each motor device that moves wafer stage WST. However, the present invention is not limited to this, and a counter is provided separately from each motor device. It is also possible to provide a mass.

  In the present embodiment, the configuration includes only one wafer stage WST. However, the configuration is not limited thereto, and the configuration may include two wafer stages that can be two-dimensionally moved independently of each other. In this case, a type having two alignment detection systems (that is, one wafer stage moves between one alignment detection system and projection optical system PL, and the other wafer stage moves to the other alignment detection system and projection optical system. The type that has only one alignment detection system (ie, two wafer stages alternate between the projection optical system and the alignment detection system). The present invention can also be suitably applied to a scanning stepper of a double wafer stage type. In addition, in a double wafer stage type scanning stepper (exposure apparatus), a separate counter mass may be provided for each of the two wafer stages, or a common counter mass may be provided only for the two wafer stages. good. Particularly in the latter case, a movable surface plate on which two wafer stages are placed may be used as a counter mass, as disclosed in, for example, pamphlet of International Publication No. WO01 / 47001.

  It is also possible to install a counter mass for absorbing a reaction force generated by driving the reticle stage, and to control the counter mass by the control method of the first embodiment.

  In the exposure apparatus according to the present embodiment, the wafer stage WST is mounted on the base (or base) F supported by the vibration isolation unit. For example, the wafer stage WST is mounted. A structure in which the base is suspended from the lens barrel base plate 30 may be used. In short, the body structure of the exposure apparatus to which the present invention is applied is not limited to the above embodiments, and may be arbitrary.

  Of course, the present invention is not limited to an exposure apparatus used for manufacturing a semiconductor element, but also used for manufacturing a display including a liquid crystal display element, a plasma display, and the like. The present invention can also be applied to an exposure apparatus used to manufacture a device pattern, which transfers a device pattern onto a ceramic wafer, and an exposure apparatus used to manufacture an image sensor (CCD, etc.), organic EL, micromachine, DNA chip, etc. it can.

  In addition to a micro device such as a semiconductor element, a glass substrate is used to manufacture a reticle or mask used in an optical exposure apparatus, an EUV (Extreme Ultraviolet) exposure apparatus, an X-ray exposure apparatus, an electron beam exposure apparatus, and the like. Alternatively, the present invention can also be applied to an exposure apparatus that transfers a circuit pattern onto a silicon wafer or the like. Here, in an exposure apparatus using DUV (far ultraviolet) light, VUV (vacuum ultraviolet) light, or the like, a transmission type reticle is generally used. As a reticle substrate, quartz glass, fluorine-doped quartz glass, fluorite, Magnesium fluoride or quartz is used. A proximity type X-ray exposure apparatus or electron beam exposure apparatus uses a transmission mask (stencil mask, membrane mask), an EUV exposure apparatus uses a reflection mask, and the mask substrate is a silicon wafer or the like. Is used.

In the exposure apparatus according to the present invention, not only the projection optical system but also a charged particle beam optical system such as an X-ray optical system or an electron optical system can be used. For example, when an electron optical system is used, the optical system can be configured to include an electron lens and a deflector, and thermionic emission type lanthanum hexabolite (LaB ₆ ) and tantalum (Ta) are used as an electron gun. Can be used. Needless to say, the optical path through which the electron beam passes is in a vacuum state. In the exposure apparatus according to the present invention, the exposure light is not limited to the light in the far ultraviolet region and the vacuum ultraviolet region described above, and EUV light in a soft X-ray region having a wavelength of about 5 to 30 nm may be used.

For example, ArF excimer laser light, F ₂ laser light, or the like is used as vacuum ultraviolet light. However, the present invention is not limited to this, and a single wavelength laser in the infrared region or visible region oscillated from a DFB semiconductor laser or fiber laser is used. For example, harmonics obtained by amplifying light with a fiber amplifier doped with erbium (or both erbium and ytterbium) and converting the wavelength into ultraviolet light using a nonlinear optical crystal may be used.

  In the present embodiment, the case where the reduction system is used as the projection optical system has been described. However, the projection optical system may be either a unity magnification system or an enlargement system.

  An illumination unit composed of a plurality of lenses and the like, a projection optical system, and the like are incorporated in the exposure apparatus body, and optical adjustment is performed. Then, the above-mentioned X-axis stator, X-axis mover, Y-axis stator, wafer stage, reticle stage, and various other parts are adjusted in combination mechanically and electrically, and further integrated adjustment (electric adjustment, By performing the operation check or the like, the exposure apparatus according to the present invention such as the exposure apparatus 100 of the present embodiment can be manufactured. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  In addition, as shown in FIG. 10, a microdevice such as a semiconductor device includes a step 201 for designing a function / performance of the microdevice, a step 202 for producing a mask (reticle) based on the design step, and a substrate of the device. Step 203 for manufacturing a substrate, exposure processing step 204 for exposing the mask pattern onto the substrate by the exposure apparatus EX of the above-described embodiment, device assembly step (including dicing process, bonding process, and packaging process) 205, inspection step 206 And so on.

It is a schematic diagram for demonstrating the control method which is one Embodiment of this invention. It is explanatory drawing for demonstrating the control method which is one Embodiment of this invention. 1 is a drawing schematically showing a configuration of an exposure apparatus 100 that is an embodiment of the present invention. FIG. It is a perspective view which shows the wafer stage apparatus of FIG. FIG. 5 is a partially cutaway view of the wafer stage and its driving device in FIG. 4. (A) is the DD sectional view taken on the line of FIG. 4, (B) is the figure which looked at the Y-axis stator 42B and the frame 44B of FIG. 4 from + X direction. It is a figure which removes an X axis stator from Drawing 5, and shows a part of X axis mover fractured. FIG. 5 is a view showing a cross section of the X-axis motor device XM and Y-axis movers 48A and 48B along a plane parallel to the XY plane at a position slightly above the center in the height direction, with a part thereof omitted. It is a figure which shows an example of the movement locus | trajectory of the illumination light with respect to the several shot area | region on a wafer. It is a flowchart for demonstrating the manufacturing method of the device which is one Embodiment of this invention.

Explanation of symbols

R ... reticle (mask), W ... wafer (photosensitive object), RST ... reticle stage (mask stage), WST ... wafer stage (photosensitive object stage), 1 ... controlled object, 2 ... counter mass, 15 ... reticle Drive unit (part of drive system), 20 ... Stage control system (part of drive system), 22 ... Main control system (control device), 34 ... Wafer drive unit (part of drive system), 42A, 42B ... Y axis stator (counter mass), 106A, 108A, 106B, 108B... Y axis trim motor (part of the counter mass drive system), 100... Exposure apparatus, 110.

Claims (13)

A control method for controlling a counter mass that moves according to a law of conservation of momentum based on a command value by an action of a reaction force generated by driving a control object on a reference plane,
A first step of controlling the counter mass based on a first command value obtained by a mass ratio between the control object and the counter mass when the control object is driven with a first operation accuracy;
A second step of controlling the counter mass based on a second command value when the control target is driven with a second operation accuracy different from the first operation accuracy;
The control method characterized in that the first command value and the second command value are made continuous at the time of switching between the first step and the second step. The control method according to claim 1, wherein the second command value is obtained by the pseudo mass ratio calculated by changing an apparent mass of the counter mass. The control method according to claim 2, wherein an apparent mass of the counter mass is increased. The control method according to claim 2, wherein an apparent mass of the counter mass is changed based on a stroke allowable range of the counter mass. The control method according to claim 1, wherein the first operation accuracy is a relatively high operation accuracy, and the second operation accuracy is a relatively low operation accuracy. An exposure method for transferring a pattern formed on a mask to an area on a photosensitive object,
A mask stage on which the mask is placed and / or a photosensitive object stage on which the photosensitive object is placed is at least a part of the control target, and the mask stage and / or the photosensitive object stage is driven. 6. An exposure method comprising: controlling a counter mass that moves according to a law of conservation of momentum by the action of a reaction force generated by the control method according to claim 1. A device manufacturing method using the exposure method according to claim 6. Stage,
A drive system for driving the stage on a reference plane;
A counter mass that moves according to a law of conservation of momentum by the action of a reaction force generated when the stage is driven by the drive system;
A counter mass drive system for driving the counter mass;
When the stage is driven with a first operation accuracy, the counter mass drive system is controlled based on the first command value obtained by the mass ratio between the stage and the counter mass, and the stage is moved to the first stage. A control device that controls the counter mass drive system based on the first command value and a second command value that is continuous at the time of switching when driving with a second operation accuracy different from the operation accuracy. A stage device. The second command value is a value determined by the pseudo mass ratio calculated by changing the apparent mass of the counter mass;
9. The stage device according to claim 8, wherein the control device controls the counter mass drive system so that a thrust is applied to the counter mass based on the second command value. The second command value is a value obtained by the pseudo mass ratio calculated by increasing the apparent mass of the counter mass;
The control device controls the counter mass drive system based on the second command value so that thrust is applied to the counter mass in a direction opposite to the direction of motion according to the law of conservation of momentum. The stage apparatus according to claim 8. The second command value is a value obtained by a pseudo mass ratio calculated by changing an apparent mass of the counter mass based on a stroke allowable range of the counter mass. The stage apparatus according to claim 8. 12. The stage apparatus according to claim 8, wherein the first operation accuracy is a relatively high operation accuracy, and the second operation accuracy is a relatively low operation accuracy. An exposure apparatus for transferring a pattern formed on a mask to an area on a photosensitive object,
13. A mask stage device on which the mask is placed and a photosensitive object stage device on which the photosensitive object is placed, the mask stage device and / or the photosensitive object stage device as claimed in any one of claims 8 to 12. An exposure apparatus using the stage apparatus.

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