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JP2006144076A - Chemical plating method - Google Patents

Chemical plating method Download PDF

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JP2006144076A
JP2006144076A JP2004335702A JP2004335702A JP2006144076A JP 2006144076 A JP2006144076 A JP 2006144076A JP 2004335702 A JP2004335702 A JP 2004335702A JP 2004335702 A JP2004335702 A JP 2004335702A JP 2006144076 A JP2006144076 A JP 2006144076A
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plating
plated
lead member
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Susumu Nishiwaki
進 西脇
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NEC Schott Components Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a chemical plating method for consistently and efficiently performing contact or electroless plating. <P>SOLUTION: In the chemical plating method, when performing the partial plating on an airtight terminal 1 in which a lead member 5 is airtight-sealed to an opening of a metal outer ring 2 with glass 4, an electrochemical sacrifice electrode is provided on the lead member 5 forming a metal to be plated, and immersed in a plating liquid 8. The metal to be plated of the lead member 5 is formed of nickel, and the sacrifice electrode is formed of zinc and tin, and a gold plating film 9 controlled to a desired thickness by immersing the lead member and the sacrifice electrode in gilding liquid is free from any pin hole, and excellent in adhesivity. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

この発明は、接触めっきまたは無電解めっき法を利用する化学的めっき方法、特に電気化学的に卑な金属を犠牲電極として用いるリード部材等の部分めっきに好適な化学的めっき方法に関する。   The present invention relates to a chemical plating method using contact plating or an electroless plating method, and more particularly to a chemical plating method suitable for partial plating of a lead member or the like using an electrochemically base metal as a sacrificial electrode.

従来、析出する金属の化合物を含む溶液中において、めっきをしようとする被めっき金属をそれより卑な金属と接触させて電池を形成し、被めっき金属をカソードにして電着させる方法が知られている。この接触めっき手法は無電解めっきの最初に析出をスタートさせるためにも利用されている。また、第1の金属が電解質溶液に接するとき溶液中の第2の金属イオンと置換する反応を利用した無電解めっき法も広く利用されている。これは第1の金属のイオン化傾向が第2の金属のイオン化傾向や水素Hより大きいほど第2の金属が第1の金属と置換し易いというイオン化傾向を利用した方法である。すなわち、金属表面の接触作用による還元を利用した方法であって、電気めっきとは異なる化学的な方法と言える。例えば、前者の接触めっき方法として、金属粉末を加えた水溶液にこれよりイオン化傾向の低い金属を浸漬することで金属表面にめっきをする方法が特許文献1に提案されている。また、無電解銅めっきを具体例として、無電解めっきの分類やめっき液の組成等については特許文献2が開示している。   Conventionally, in a solution containing a metal compound to be deposited, a method is known in which a metal to be plated is brought into contact with a base metal to form a battery and electrodeposited using the metal to be plated as a cathode. ing. This contact plating technique is also used to start deposition at the beginning of electroless plating. An electroless plating method that utilizes a reaction of substituting the second metal ions in the solution when the first metal contacts the electrolyte solution is also widely used. This is a method using an ionization tendency that the second metal is more easily replaced with the first metal as the ionization tendency of the first metal is larger than the ionization tendency of the second metal or hydrogen H. That is, it can be said to be a chemical method different from electroplating, which is a method using reduction by contact action of the metal surface. For example, as a former contact plating method, Patent Document 1 proposes a method of plating a metal surface by immersing a metal having a lower ionization tendency in an aqueous solution to which metal powder is added. Further, taking electroless copper plating as a specific example, Patent Document 2 discloses the classification of electroless plating, the composition of a plating solution, and the like.

ところで、特許文献2に開示される無電解めっきは外部から水溶液に電気エネルギーを与えないで行うめっきを言うが、さらに、Au、Snめっきなどの置換めっき、あまり実用されない接触めっき、銀鏡反応が代表的な非触媒化学めっき、およびNiなど通常の無電解めっきである触媒化学めっきの4つに分類される。
特開平6−65752号公報 特開2001−57367号公報
By the way, the electroless plating disclosed in Patent Document 2 refers to plating performed without applying electric energy to the aqueous solution from the outside, and further representative are substitution plating such as Au and Sn plating, contact plating that is not practically used, and silver mirror reaction. And non-catalytic chemical plating, and catalytic chemical plating, which is normal electroless plating such as Ni.
JP-A-6-65752 JP 2001-57367 A

しかしながら、気密端子などのリード部材の部分めっきなどでは、こうした無電解めっきでは満足するようなめっき膜厚や均一な膜厚が得られていなかった。また、めっき膜を厚くしたり均一化したりするためにはめっき液を微妙に調整管理する必要が生じて多大な手間暇が要請されるなど作業面での問題点を残している。   However, in the partial plating of lead members such as airtight terminals, a plating film thickness and a uniform film thickness that are satisfactory in such electroless plating have not been obtained. In addition, in order to make the plating film thicker or uniform, it is necessary to finely adjust and manage the plating solution, which requires a lot of time and effort.

一方、セラミック基板に印刷で形成した電極に無電解めっきを行う場合、電極パターンが微細かつ複雑になると電気導通を得るのが困難になって満足なめっきができない。特に、無電解めっきとして置換めっきを適用すると、めっき厚さに限界が生ずるために所望する厚さのめっき膜が得られず、析出速度が遅い上に密着が悪くてピンホールの多いめっきとなることがある。また、還元剤によるめっき法を適用すると、めっき液が不安定で分解しやすく、めっき液の寿命が短くなり、電極以外の金属部分にもめっきが着いてしまい、めっき液のコストが高くなるなどの欠陥が伴う。たとえば、ニッケル電極への置換めっきによる場合、素材そのものが腐食という形態で酸化されてめっきが着くのであるから、腐食の進行する素材はめっき膜界面の密着強度が著しく低下することになる。また、腐食の進行しているアノードは、ある程度めっき膜で覆われてくると酸化反応速度が非常に遅くなり、同時にめっき析出という還元反応がほとんど停止してしまう。しかも、腐食部分はピンホールなどのめっきの着かない部分が残ることが多くめっき質として非常に劣るものとなる。その結果、従来の無電解めっきはめっき液の微細な調整などから作業性が低下しかつ作業者の技能養成が欠かせなかった。   On the other hand, when electroless plating is performed on an electrode formed by printing on a ceramic substrate, if the electrode pattern is fine and complicated, it is difficult to obtain electrical conduction, and satisfactory plating cannot be performed. In particular, when displacement plating is applied as electroless plating, a plating film with a desired thickness cannot be obtained because the plating thickness is limited, resulting in plating with many pinholes due to a slow deposition rate and poor adhesion. Sometimes. In addition, when a plating method using a reducing agent is applied, the plating solution is unstable and easily decomposed, the life of the plating solution is shortened, the metal part other than the electrode is plated, and the cost of the plating solution is increased. Accompanied by defects. For example, in the case of displacement plating on a nickel electrode, since the material itself is oxidized in the form of corrosion and plating arrives, the corrosion-promoting material significantly reduces the adhesion strength at the plating film interface. Further, when the corrosion-promoted anode is covered with a plating film to some extent, the oxidation reaction rate becomes very slow, and at the same time, the reduction reaction called plating deposition is almost stopped. Moreover, the corroded portion often remains as a pinhole or other non-plated portion, resulting in a very poor plating quality. As a result, the conventional electroless plating has deteriorated workability due to fine adjustment of the plating solution and the skill training of the operator is indispensable.

したがって、この発明の目的は上記欠点に鑑みて提案されたものであリ、作業効率のみならず品質的にも向上する化学的めっき方法を提供するものである。特に、ワークの形状を変える程度の簡単な変更で無電解めっきの反応方法を変えることで、還元剤や触媒を用いない単純めっき液を使用し作業性を向上できる新規かつ改良された化学的めっき方法の提案を目的とする。   Accordingly, an object of the present invention is proposed in view of the above-mentioned drawbacks, and provides a chemical plating method that improves not only work efficiency but also quality. In particular, a new and improved chemical plating that can improve workability by using a simple plating solution that does not use a reducing agent or catalyst by changing the reaction method of electroless plating with a simple change that changes the shape of the workpiece. The purpose is to propose a method.

本発明の他の目的は、多数のリード部材を有する気密端子において、リード部材に部分めっきをする場合に好都合なめっき方法、特に内部リードの所要部分のみに貴金属めっきをするような場合に経済的でコストメリットを発揮する新規かつ改良されためっき方法の提供にある。   Another object of the present invention is to provide an advantageous plating method when the lead member is partially plated in an airtight terminal having a large number of lead members, particularly when noble metal plating is applied only to a required portion of the internal lead. The present invention is to provide a new and improved plating method that exhibits cost merit.

本発明によれば、電気化学的に卑な金属を犠牲電極として設けた被めっき金属素材をめっき液に浸漬して被めっき金属素材に所定のめっき液金属を析出させる接触または無電解めっきによる化学的めっき方法が提案され、犠牲電極の量で膜厚を制御でき所望する厚さで密着がよくてピンホールのないめっき膜を得る。また、安価でシンプルなめっき液が使用できて、電極以外へのめっき析出が少なくかつ析出速度が速くめっき時間によるロケーションのばらつきのない均一めっきが実現できることも判明した。   According to the present invention, a chemical by contact or electroless plating in which a metal material to be plated provided with an electrochemically base metal as a sacrificial electrode is immersed in a plating solution to deposit a predetermined plating solution metal on the metal material to be plated. An electroplating method has been proposed, and the film thickness can be controlled by the amount of the sacrificial electrode, and a plating film having a desired thickness and good adhesion and no pinholes can be obtained. It has also been found that an inexpensive and simple plating solution can be used, and that uniform plating can be realized with little plating deposition other than the electrodes, high deposition rate and no variation in location due to plating time.

本発明は、被めっき金属素材を無電解めっきする際、予め選定しためっき液に浸漬した金属素材の一部に電気化学的な犠牲電極を設け、この犠牲電極を電子の供給源とする化学的めっき方法である。たとえば、金(Au)めっき液にニッケル(Ni)の被めっき金属素材を浸漬し、犠牲電極に標準電極電位の低い金属、電気化学的に卑な金属の亜鉛(Zn)を利用できる。亜鉛を犠牲電極としてニッケル電極に接触させた場合には、亜鉛の標準電極電位が低いので、混成電位は金とニッケルに比べて低くなる。すなわち、酸化反応はZn→Zn2+がNi→Ni2+より支配的になりニッケルの腐食反応がほとんど起こることなく、金メッキの析出が進行する。それゆえに、界面の腐食による密着不良やピンホールの減少が実現され、加えて犠牲電極が存在する間は金メッキの析出が進行し続け、結果的に犠牲電極を十分な量に設定しておけば厚いめっき膜の実現も可能となる。また、金属外環とリード部材とが絶縁されている気密端子の場合に、めっき液の選定調整により、犠牲電極を設けたリード部材にはめっきが析出するが、金属外環には電子の供給源がなくめっきを析出させないようにすることも可能である。したがって、気密端子のリード部材のみに所望する良質な金めっきを形成させることができる。 The present invention provides an electrochemical sacrificial electrode on a part of a metal material immersed in a preselected plating solution when performing electroless plating on a metal material to be plated, and uses this sacrificial electrode as a source of electrons. It is a plating method. For example, a metal material to be plated of nickel (Ni) can be immersed in a gold (Au) plating solution, and a metal having a low standard electrode potential, or an electrochemically base metal zinc (Zn) can be used for the sacrificial electrode. When zinc is brought into contact with the nickel electrode as a sacrificial electrode, the standard electrode potential of zinc is low, so the hybrid potential is lower than that of gold and nickel. That is, in the oxidation reaction, Zn → Zn 2+ is more dominant than Ni → Ni 2+ , and nickel plating proceeds with almost no corrosion reaction of nickel. Therefore, poor adhesion due to interface corrosion and reduction of pinholes are realized, and in addition, while the sacrificial electrode is present, the deposition of gold plating continues, and if the sacrificial electrode is set to a sufficient amount as a result. A thick plating film can also be realized. In the case of an airtight terminal in which the metal outer ring and the lead member are insulated, plating is deposited on the lead member provided with the sacrificial electrode due to the selection adjustment of the plating solution, but electrons are supplied to the metal outer ring. It is also possible to have no source and not to deposit the plating. Therefore, the desired high-quality gold plating can be formed only on the lead member of the hermetic terminal.

本発明の別の観点によれば、本発明者は特に被めっき金属素材に金を析出させる場合に錫(Sn)を含むはんだめっきを犠牲電極として利用し、はんだめっきを形成しない部分へ良質なめっき膜を形成することを見出した。たとえば、ニッケル母材のめっきを着けたくない部分に溶融めっきを施したい場合でも、めっき液の選択によっては実現可能となる。この場合錫は標準電極電位として電気化学列上貴となるが、アルカリ溶液では電位が逆転しPHの調整により有効な犠牲電極となる。さらには、めっき液中の錯化剤、安定剤、金属イオン濃度を選択すれば電気化学電位は同じ電位か逆転状態への調整も可能であって犠牲電極の種類も選択可能となる。具体的にリード部材が金属外環とガラス材により気密封着して絶縁された気密端子が対象となる場合、被めっき金属素材がリード部材であり、犠牲電極がこのリード部材に設けた亜鉛である場合に、めっき液に錯化剤を使用して電位状態を選定することで気密端子の金属外環へのめっき析出を阻止することもできる。さらに、被めっき金属素材が気密端子リード部材の内部リード部であり、犠牲電極をリード部材の外部リード部に形成したはんだめっきとして本発明の化学的めっき方法を適用することもできる。ここで、はんだめっきは溶融はんだ液にリード部材の外部リードを浸漬して予め形成でき、気密端子全体を所望するめっき液に浸漬して内部リード部に部分めっきを形成することができる。   According to another aspect of the present invention, the present inventor uses solder plating containing tin (Sn) as a sacrificial electrode, particularly when gold is deposited on a metal material to be plated, and improves the quality to a portion where solder plating is not formed. It has been found that a plating film is formed. For example, even if it is desired to perform hot dipping on a portion where the nickel base material is not desired to be plated, this can be realized depending on the selection of the plating solution. In this case, tin is noble on the electrochemical column as a standard electrode potential, but in an alkaline solution, the potential is reversed and an effective sacrificial electrode is obtained by adjusting the pH. Furthermore, if the complexing agent, stabilizer, and metal ion concentration in the plating solution are selected, the electrochemical potential can be adjusted to the same potential or reverse state, and the type of sacrificial electrode can be selected. Specifically, when a lead member is hermetically sealed by a metal outer ring and a glass material and insulated, the metal material to be plated is the lead member, and the sacrifice electrode is made of zinc provided on the lead member. In some cases, it is also possible to prevent plating deposition on the metal outer ring of the hermetic terminal by selecting a potential state using a complexing agent in the plating solution. Furthermore, the chemical plating method of the present invention can be applied as solder plating in which the metal material to be plated is the internal lead portion of the hermetic terminal lead member and the sacrificial electrode is formed on the external lead portion of the lead member. Here, the solder plating can be performed beforehand by immersing the external lead of the lead member in a molten solder solution, and the entire airtight terminal can be immersed in a desired plating solution to form a partial plating on the internal lead portion.

本発明に係る犠牲電極を利用した化学的めっき方法は、犠牲電極の量で膜厚を制御できて厚いめっき膜が可能となり、同時に密着がよくてピンホールの少ないめっき膜が得られる。また、シンプルでコストメリットのあるめっき方法であり、めっき液の調整が容易となり作業の能率向上に役立つほか、めっき作業中に電極以外へのめっき析出が抑止されかつ析出速度が速く、めっき時間によるロケーションのばらつきを吸収するなどの工業的価値が高い。   In the chemical plating method using the sacrificial electrode according to the present invention, the film thickness can be controlled by the amount of the sacrificial electrode, and a thick plating film can be obtained. At the same time, a plating film with good adhesion and few pinholes can be obtained. In addition, it is a simple and cost-effective plating method that facilitates adjustment of the plating solution and helps improve work efficiency. In addition, plating deposition other than the electrode is suppressed during the plating operation, and the deposition rate is high, depending on the plating time. Industrial value such as absorbing location variations is high.

本発明の実施においては、製品の気密端子には不要となる犠牲電極は、部品の整列、組立あるいはガラス封着作業時に溶接等で設ければ少ない工数で部分めっきが可能となる。特に、溶融はんだめっきのように本来必要な異なる種類の金属部分を犠牲電極とすれば、これがレジスト材としての機能も果たしてその除去作業を省略できる。また、めっき作業もめっき液への浸漬のみでよく電源設備を要せずに実施できる。さらに、電気的導通性のある金属部分が多数ある場合でも特性の要求される部品のみに高価な貴金属めっきが着けられコスト的に有利となる。   In the practice of the present invention, if the sacrificial electrode that is not necessary for the airtight terminal of the product is provided by welding or the like during parts alignment, assembly, or glass sealing operation, partial plating can be performed with less man-hours. In particular, if a different kind of metal part that is originally necessary, such as molten solder plating, is used as a sacrificial electrode, this also serves as a resist material, and the removal work can be omitted. Also, the plating operation can be performed only by dipping in the plating solution without requiring power supply equipment. Further, even when there are a large number of electrically conductive metal parts, expensive noble metal plating is applied only to parts that require characteristics, which is advantageous in terms of cost.

本発明は被めっき金属素材の一部に電気化学的な犠牲電極を設け、この犠牲電極を電子の供給源とする化学的めっき方法であって、めっき液が金(Au)、被めっき金属素材がニッケル(Ni)またはその合金(Fe−Ni)、および犠牲電極が亜鉛(Zn)または錫(Sn)である場合に、被めっき金属素材に金を析出させることを特徴とするもので、犠牲電極の量によりめっき厚等の制御可能である。   The present invention is a chemical plating method in which an electrochemical sacrificial electrode is provided on a part of a metal material to be plated, and the sacrificial electrode is used as an electron supply source, wherein the plating solution is gold (Au), and the metal material to be plated Is characterized in that gold is deposited on a metal material to be plated when nickel (Ni) or its alloy (Fe—Ni) and the sacrificial electrode is zinc (Zn) or tin (Sn). The plating thickness can be controlled by the amount of electrodes.

一方、本発明の化学的めっき方法を金属外環とリード部材とをガラスにより気密封着して絶縁する気密端子に応用する場合、被めっき金属素材となるリード部の一部分に溶融はんだめっきを施して犠牲電極とし、このリード部材の他の部分に所望するめっき液の金属を析出させる。特に、溶融はんだめっきをリード部材の外部リード部に形成すれば、リード部材の内部リード部にのみに金めっき液により金の部分メッキを形成し、それにより高価な金めっきを煩雑な予備工程を経ることなく簡単かつ確実に所望する位置に化学的めっきが施される。   On the other hand, when the chemical plating method of the present invention is applied to a hermetic terminal in which a metal outer ring and a lead member are hermetically sealed with glass to insulate, a part of the lead portion to be plated metal material is subjected to hot-dip solder plating. As a sacrificial electrode, a desired plating solution metal is deposited on the other part of the lead member. In particular, if molten solder plating is formed on the external lead portion of the lead member, a gold partial plating is formed only on the internal lead portion of the lead member with a gold plating solution, thereby making expensive preliminary plating complicated. Chemical plating is performed at a desired position easily and reliably without passing.

以下、本発明の実施例を気密端子に対するリード部材へのめっきについて、図1(a)〜(c)を参照しつつ説明する。図1(a)はめっき処理前の気密端子1を示す。この気密端子1はFe−Niコバール等の中空状金属外環2と、その中空部3に気密封着したガラス4と、このガラスを貫通するニッケルのリード部材5とを具備する。本発明の化学的めっき方法をこのリード部材5に適用するために、被めっき金属素材としてのリード部材5はその一端部6に亜鉛(Zn)ボール7が溶接され、めっき処理で犠牲電極として機能させる準備がなされる。ここで、リード部材5に設けた亜鉛ボール7はリード部材5の被めっき素材Niに比べて電気化学的に卑な金属であり、Niに比べてZnはイオン化傾向が強い金属である。しかし、本発明ではSnのような貴の金属でもめっき液の調整により犠牲電極として利用できることが見出された。次に、亜鉛ボール7を設けたリード部材5を有する気密端子1は、図1(b)に示すように、金のめっき液8に浸漬される。すると、リード部材5の表面には金(Au)が析出され、犠牲電極の亜鉛ボール7の存在する間、金めっきが進行する。図1(c)はこのようにして所望する膜厚の金めっき膜9が形成されたリード部材5を有する気密端子10を示す。この場合の金めっき膜9は犠牲電極の亜鉛ボール7を設けたリード部材5のみに形成され、金属外環2にはめっきされない。したがって、所望する位置への部分めっきが行なわれ、所望しない部分へのめっき付着が阻止できる。このようにして形成した金めっき膜9は所望する厚さに容易に制御できかつ無ピンホールで密着性良好なめっきが得られる。   In the following, embodiments of the present invention will be described with reference to FIGS. FIG. 1A shows the hermetic terminal 1 before plating. The hermetic terminal 1 includes a hollow metal outer ring 2 such as Fe-Ni Kovar, a glass 4 hermetically sealed in the hollow portion 3, and a nickel lead member 5 penetrating the glass. In order to apply the chemical plating method of the present invention to the lead member 5, the lead member 5 as a metal material to be plated is welded with a zinc (Zn) ball 7 at one end portion 6 and functions as a sacrificial electrode in the plating process. Preparations are made. Here, the zinc ball 7 provided on the lead member 5 is an electrochemically base metal compared to the material Ni to be plated of the lead member 5, and Zn is a metal having a strong ionization tendency compared to Ni. However, in the present invention, it has been found that a noble metal such as Sn can be used as a sacrificial electrode by adjusting the plating solution. Next, the hermetic terminal 1 having the lead member 5 provided with the zinc balls 7 is immersed in a gold plating solution 8 as shown in FIG. Then, gold (Au) is deposited on the surface of the lead member 5, and gold plating proceeds while the zinc ball 7 of the sacrificial electrode is present. FIG. 1C shows an airtight terminal 10 having a lead member 5 on which a gold plating film 9 having a desired film thickness is formed in this manner. In this case, the gold plating film 9 is formed only on the lead member 5 provided with the zinc ball 7 as a sacrificial electrode, and is not plated on the metal outer ring 2. Therefore, partial plating is performed at a desired position, and plating adhesion to an undesired portion can be prevented. The gold plating film 9 formed in this manner can be easily controlled to a desired thickness, and plating with good adhesion can be obtained with no pinholes.

次に、犠牲電極を実用上所望される金属を利用し作業性を大幅に改善する場合の実施例を説明する。図2(a)〜(c)は複数個のリード部材を有する気密端子の所望する部分に金めっきを施す第2の実施例である。この実施例は、気密端子11が外環12の開口部13がガラス14で気密封着され、このガラス14を気密封着状態で貫通する複数個のリード部材15を具備して構成される場合のリード部材15に対して本発明の化学的めっき方法の適用例である。先ず、図2(a)に示すように、気密端子11はそのリード部材15の外部リード部16が溶融はんだ液18の液中に浸漬される。その結果、複数個リード部材15の外部リード部16に溶融はんだ液18への浸漬によってはんだめっき膜19が形成される(図2(b)参照)これが犠牲電極として利用される。次に、はんだめっき膜19が外部リード部16に形成された気密端子は、図2(c)に示されるように、全体を金めっき液20に浸漬する。その結果、前述の実施例と同様に犠牲電極のはんだめっき膜19を付けたリード部材15の内部リード部17にのみ金めっきが析出され、図2(c)に示されるように、所望する部分のみに所定膜厚の金めっき膜21を有する気密端子22が得られる。このように、実用上必要なはんだめっき膜19が犠牲電極として効果的に働き、リード部材15の内部リード部17に経済的で安定な金めっき膜21を備えた気密端子22が提供される。   Next, an embodiment will be described in which the sacrificial electrode is substantially improved in workability using a metal that is practically desired. FIGS. 2A to 2C show a second embodiment in which gold plating is applied to a desired portion of an airtight terminal having a plurality of lead members. In this embodiment, the hermetic terminal 11 is configured by hermetically sealing the opening 13 of the outer ring 12 with the glass 14 and including a plurality of lead members 15 penetrating the glass 14 in a hermetically sealed state. This is an application example of the chemical plating method of the present invention to the lead member 15. First, as shown in FIG. 2A, the external lead portion 16 of the lead member 15 of the hermetic terminal 11 is immersed in a molten solder solution 18. As a result, a solder plating film 19 is formed on the external lead portion 16 of the plurality of lead members 15 by immersion in the molten solder solution 18 (see FIG. 2B), and this is used as a sacrificial electrode. Next, the airtight terminal having the solder plating film 19 formed on the external lead part 16 is immersed in the gold plating solution 20 as shown in FIG. As a result, the gold plating is deposited only on the internal lead portion 17 of the lead member 15 to which the solder plating film 19 of the sacrificial electrode is attached in the same manner as in the above-described embodiment. As shown in FIG. Only the airtight terminal 22 having the gold plating film 21 having a predetermined film thickness is obtained. In this way, the solder plating film 19 that is practically necessary effectively acts as a sacrificial electrode, and the airtight terminal 22 provided with the economical and stable gold plating film 21 on the internal lead portion 17 of the lead member 15 is provided.

本発明による化学的めっき方法は、上述する実施例から分るように、めっき処理を容易にして、コスト的にも品質的にも有利な効果を発揮するなどの実用的に評価される。こうした気密端子の特定部分へ金めっきを形成する従来方法は、個々のリード部材の金めっきしたくない部分に対してワイヤリングやレジスト材の塗布などで対処しており、部分めっき処理後にはワイヤリングや塗布材の除去が必要となり工数的また材料面での無駄が多く、コストアップの要因となっていた。しかるに、本発明ではリード部材の一部を溶融はんだディップで犠牲電極となるはんだめっき膜が形成され、かつこのはんだめっき膜は除去することなく電子部品の取付けリードとしてプリント配線等でそのまま利用される。   The chemical plating method according to the present invention is evaluated practically, such as facilitating the plating treatment and exhibiting advantageous effects in terms of cost and quality, as can be seen from the above-described embodiments. The conventional method of forming gold plating on a specific portion of such an airtight terminal deals with the portion of each lead member that is not desired to be gold plated by wiring or applying a resist material. It was necessary to remove the coating material, and there was a lot of waste in terms of man-hours and materials, which was a factor in increasing costs. However, in the present invention, a part of the lead member is formed with a solder plating film that becomes a sacrificial electrode by molten solder dip, and this solder plating film is used as it is as a mounting lead for electronic components in printed wiring without being removed. .

本発明の化学的めっき方法を気密端子に適用した部分的模式図である。(実施例1)It is the partial schematic diagram which applied the chemical plating method of this invention to the airtight terminal. (Example 1) 同じく別の実施例の気密端子に適用した部分的断面を示す模式図である。(実施例2)It is a schematic diagram which shows the partial cross section similarly applied to the airtight terminal of another Example. (Example 2)

符号の説明Explanation of symbols

1、11;気密端子(処理前)、 10、22;気密端子(処理後)、
2、12;金属外環、 3、13;中空部または開口部、
4、14;ガラス、 5、15;リード部材(被めっき金属素材)、
6、16;外部リード部分、 17;内部リード部分、 18;溶融はんだ液、
7、19;亜鉛ボールまたははんだめっき(犠牲電極)、
8、20;金めっき液、 9、21;金めっき膜



1, 11; airtight terminal (before treatment), 10, 22; airtight terminal (after treatment),
2, 12; metal outer ring, 3, 13; hollow or opening,
4, 14; Glass, 5, 15; Lead member (metal material to be plated),
6, 16; external lead portion, 17; internal lead portion, 18; molten solder liquid,
7, 19; zinc balls or solder plating (sacrificial electrode),
8, 20; Gold plating solution, 9, 21; Gold plating film



Claims (6)

被めっき金属素材をめっき液に浸漬して接触または無電解めっきする方法であって、前記めっき液の選定と前記被めっき金属素材の一部分に設けた電気化学的な犠牲電極とを利用した前記犠牲電極を電子の供給源とする化学的めっき方法。 A method of immersing a metal material to be plated in a plating solution to perform contact or electroless plating, wherein the sacrifice is performed using selection of the plating solution and an electrochemical sacrificial electrode provided on a part of the metal material to be plated. A chemical plating method using an electrode as an electron source. 前記めっき液が金(Au)、前記被めっき金属素材がニッケル(Ni)、および前記犠牲電極が亜鉛(Zn)または錫(Sn)であり、前記被めっき金属素材に金を析出させることを特徴とする請求項1に記載の化学的めっき方法。 The plating solution is gold (Au), the metal material to be plated is nickel (Ni), and the sacrificial electrode is zinc (Zn) or tin (Sn), and gold is deposited on the metal material to be plated. The chemical plating method according to claim 1. 前記被めっき金属素材はリード部材が金属外環とガラス材により気密封着して絶縁された気密端子であることを特徴とする請求項1および2に記載の化学的めっき方法。 3. The chemical plating method according to claim 1, wherein the metal material to be plated is an airtight terminal in which a lead member is hermetically sealed and insulated by a metal outer ring and a glass material. 前記被めっき金属素材が前記気密端子のリード部材であり、前記犠牲電極が前記リード部材に設けた亜鉛であり、前記めっき液を選定して前記気密端子の金属外環へのめっき析出を阻止することを特徴とする請求項3に記載の化学的めっき方法。 The metal material to be plated is a lead member of the hermetic terminal, and the sacrificial electrode is zinc provided on the lead member, and the plating solution is selected to prevent plating deposition on the metal outer ring of the hermetic terminal. The chemical plating method according to claim 3, wherein: 前記被めっき金属素材が前記リード部材の内部リード部であって、前記犠牲電極が前記リード部材の外部リード部に形成したはんだめっきであることを特徴とする請求項3に記載の化学的めっき方法。 4. The chemical plating method according to claim 3, wherein the metal material to be plated is an internal lead portion of the lead member, and the sacrificial electrode is solder plating formed on an external lead portion of the lead member. . 前記はんだめっきが溶融はんだ液に前記リード部材の外部リードを浸漬して予め形成され、前記リード部材を前記めっき液に浸漬して前記内部リード部に部分めっきを形成することを特徴とする請求項5に記載の化学的めっき方法。

The solder plating is pre-formed by immersing an external lead of the lead member in a molten solder solution, and the lead member is immersed in the plating solution to form a partial plating on the internal lead portion. 5. The chemical plating method according to 5.

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021042455A (en) * 2019-09-13 2021-03-18 トヨタ自動車株式会社 How to form a metal plating film
JP7472770B2 (en) 2020-12-15 2024-04-23 トヨタ自動車株式会社 Metal plating film forming apparatus and method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021042455A (en) * 2019-09-13 2021-03-18 トヨタ自動車株式会社 How to form a metal plating film
JP7151673B2 (en) 2019-09-13 2022-10-12 トヨタ自動車株式会社 Method for forming metal plating film
JP7472770B2 (en) 2020-12-15 2024-04-23 トヨタ自動車株式会社 Metal plating film forming apparatus and method

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