JP2006013037A - Semiconductor laser device and housing loading it and optical pickup device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser device adjusting the optic axis of outgoing beams emitted from a semiconductor laser element, and also to provide a housing loading the semiconductor laser device. <P>SOLUTION: The semiconductor laser device 1 has a thin metal plate 3 and the semiconductor laser element 4 fixed on the surface of the metal plate 3. R sections 3a to be rotated while supporting the metal plate 3 are formed at the edges of the metal plate 3 so as to adjust the outgoing direction of laser beams from the semiconductor laser element 4. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor laser device that can be used in an optical pickup device or the like that reads information recorded on an optical recording medium, and a housing in which the semiconductor laser device is mounted, and in particular, a semiconductor laser on a thin metal plate that can be easily reduced in thickness. The present invention relates to a semiconductor laser device in which elements are mounted directly or via a submount.

  An optical pickup device that reads a signal of an optical disc such as a CD-ROM (read-only compact disc) or an MD (mini disc) has been thinned. Therefore, it is necessary to reduce the thickness of the semiconductor laser device that is a light source. Conventionally, a semiconductor laser device in which a semiconductor laser element is mounted on a thin metal plate directly or through a submount is used for such purposes (see, for example, Patent Document 1 (Japanese Patent Laid-Open No. 6-45709)). .)

  When such a semiconductor laser device is attached to the optical pickup device, the wing portion is inserted into the groove portion of the housing of the optical pickup (see FIG. 5 of Patent Document 1), or as shown in FIG. The semiconductor laser device 101 is fixed to the housing portion 102 by providing the convex portion 101a and fitting into the concave portion 102a provided in the housing portion 102 of the optical pickup device (see, for example, FIG. 9 of Patent Document 1). For this reason, the semiconductor laser device 101 cannot be rotated with respect to the housing portion 102 of the optical pickup device.

  On the other hand, the direction of the semiconductor laser element 104 included in the semiconductor laser device 101 is adjusted so that the light emitting end face 104a of the semiconductor laser element 104 is parallel to the edge of the thin metal plate 103, for example. Since 103 is manufactured by press working or the like, the accuracy of the edge which is a cut surface is not sufficient. Therefore, when the semiconductor laser element 104 is mounted on the thin metal plate 103, the light emitting end face 104a of the semiconductor laser element 104 is inclined from a predetermined direction. That is, the light emitting end face 104 a of the semiconductor laser element 104 is not parallel to the edge of the thin metal plate 103. Further, since the optical axis of the emitted light of the semiconductor laser element 104 is not necessarily perpendicular to the light emitting end face 104 a, the semiconductor laser element 104 is set so that the light emitting end face 104 a is accurately parallel to the edge of the thin metal plate 103. Is mounted on the thin metal plate 103, the optical axis of the emitted light of the semiconductor laser element 104 is inclined from a predetermined direction. Therefore, it is necessary to adjust so that the optical axis of the optical system of the optical pickup device and the optical axis of the emitted light from the semiconductor laser element 104 are parallel to each other. In particular, such an optical axis adjustment is required in an optical pickup device used in an optical disk device for writing that requires high light output. However, the conventional thin semiconductor laser device such as the semiconductor laser device 101 has a problem that such adjustment cannot be performed.

In addition, when the semiconductor laser device 101 is rotated to adjust the optical axis, if the position of the light emitting point changes, the optical axis moves in parallel from a predetermined position, so it is necessary to adjust the light emitting point as a center. .
JP-A-6-45709

  Accordingly, an object of the present invention is to provide a semiconductor laser device capable of adjusting the optical axis of emitted light emitted from a semiconductor laser element in a semiconductor laser device in which a semiconductor laser element is mounted on a thin metal plate directly or via a submount. It is in providing the housing which mounts. It is another object of the present invention to provide a semiconductor laser device capable of preventing a light emitting point from moving even when the optical axis is adjusted, and a housing for mounting the semiconductor laser device.

In order to solve the above problems, a semiconductor laser device of the present invention is
The main body,
A semiconductor laser element fixed to the main body,
A first rotation guide mechanism provided on the main body and capable of rotating while supporting the main body so as to be capable of adjusting a laser beam emission direction of the semiconductor laser element. It is said.

  The semiconductor laser device having the above configuration can adjust the emission direction of the laser light of the semiconductor laser element by providing the first rotation guide mechanism in the main body portion and rotating the main body portion while supporting the main body portion. Therefore, when the semiconductor laser device is mounted on, for example, a housing, the optical axis of the emitted light of the semiconductor laser element can be adjusted.

  In the semiconductor laser device according to one embodiment, the first rotation guide mechanism enables the main body to rotate around the vicinity of the light emitting point of the semiconductor laser element.

  In the semiconductor laser device of one embodiment, the main body is made of a metal plate.

  In the semiconductor laser device of one embodiment, the first rotation guide mechanism is a round portion provided at an edge of the main body.

  In the semiconductor laser device of one embodiment, the first rotation guide mechanism is a recess provided in the main body.

  In the semiconductor laser device of one embodiment, the recess is a notch provided at an edge of the main body.

  In one embodiment, the inner wall surface of the recess is a conical surface.

  In the semiconductor laser device according to one embodiment, the first rotation guide mechanism is a groove provided in the main body so as to substantially overlap a circumference centered around the light emitting point of the semiconductor laser element.

  In the semiconductor laser device of one embodiment, the main body portion includes a metal plate and a resin member provided integrally with the metal plate, and the first rotation guide mechanism is a circle centering on the semiconductor laser element. It is a groove provided in the resin member so as to substantially overlap the circumference.

The housing of the present invention
A housing body;
A second rotation guide mechanism that is provided in the housing main body and that allows the semiconductor laser device to rotate while supporting the semiconductor laser device so that the laser beam emission direction of the semiconductor laser device can be adjusted. It is said.

  According to the housing having the above-described configuration, the second rotation guide mechanism is provided in the housing body, so that the semiconductor laser device can be rotated while being supported, and the laser beam emission direction of the semiconductor laser device can be adjusted. . Therefore, when the semiconductor laser device is mounted on the housing, the optical axis of the emitted light from the semiconductor laser element can be adjusted.

  In one embodiment, the second rotation guide mechanism allows the semiconductor laser device to rotate around the vicinity of the light emitting point of the semiconductor laser device.

  In the housing of one embodiment, the second rotation mechanism is a guide portion provided on the housing body and having a curved surface.

  In the housing of one embodiment, the second rotation mechanism is a protrusion.

  In the housing of one embodiment, the shape of the protrusion is a conical shape.

  In the housing of one embodiment, the shape of the protrusion is an arc shape.

  In one embodiment, the number of protrusions is one.

  In the housing of one embodiment, the number of the protrusions is two.

  The optical pickup device of the present invention includes the semiconductor laser device of the present invention and the housing of the present invention.

  In the semiconductor laser device of the present invention, the first rotation guide mechanism is provided in the main body, so that the main laser beam can be rotated while supporting the main body to adjust the laser beam emission direction of the semiconductor laser element.

  Since the housing of the present invention is provided with the second rotation guide mechanism in the housing body, the optical axis of the emitted light of the semiconductor laser element can be adjusted by rotating the semiconductor laser device while supporting the semiconductor laser device.

  Hereinafter, a semiconductor laser device and a housing of the present invention will be described in detail with reference to embodiments shown in the drawings.

(First embodiment)
FIG. 1 shows a schematic view of a semiconductor laser device 1 according to a first embodiment of the present invention and a housing 2 which is a semiconductor laser mounting portion of a chassis of an optical pickup device, as viewed from the front side. Here, in addition to the semiconductor laser device, the chassis of the optical pickup device is equipped with a collimator lens that converts light emitted from a semiconductor laser element (not shown) into substantially parallel light, an optical axis conversion mirror, an objective lens driving device, and the like. The optical pickup optical system is integrally held.

  The semiconductor laser device 1 includes a thin metal plate 3 having a thickness of 0.3 mm, for example, an iron plate or copper plate plated with tin (Sn), gold (Au) or the like, and a submount 5 on the surface of the thin metal plate 3. And a semiconductor laser element 4 fixed thereto. On the surface of the thin metal plate 3, a resin frame 8 having a thickness of 3 mm provided integrally with the electrode lead 7 is provided. That is, the thin metal plate 3 is integrated with the resin frame 8 and the electrode lead 7. Further, the inner peripheral surface of the resin frame 8 faces both side surfaces and the rear surface (surface opposite to the light emitting end surface 4a) of the semiconductor laser element 4. The cathode (upper surface) of the semiconductor laser element 4 and the lead 7 are electrically connected by a metal wire (not shown) (for example, Au wire having a diameter of 25 μm). The anode of the semiconductor laser element 4 is electrically connected to an electrode on the submount 5 by a thin metal wire (not shown), and the electrode on the submount is connected to the thin metal plate 3 (this is connected to one of the leads 7). Are electrically connected by a thin metal wire (not shown). Further, a rounded portion 3 a located on the side of the semiconductor laser element 4 and a notch 3 b located in front of the semiconductor laser element 4 are formed at the edge of the thin metal plate 3. The semiconductor laser element 4 is an example of a semiconductor laser element. Moreover, the said thin metal plate 3 and the resin frame 8 comprise an example of a main-body part.

  The housing 2 includes a rectangular plate-shaped housing main body 6 and a guide portion 9 provided on the housing main body 6 and having a contact surface 9a as an example of a curved surface. The curvature of the contact surface 9 a is substantially the same as the curvature of the rounded portion 3 a of the thin metal plate 3. The surface of the housing body 6 that contacts the thin metal plate 3 is lower than the surface of the guide portion 9. The curvature of one rounded portion 3a and the curvature of the other rounded portion 3a are not necessarily equal, but the center of curvature of each rounded portion 3a is the light emitting point (front end face (light emitting end face 4a) of the semiconductor laser element 4. It is desirable to substantially match the center of When the radius of curvature of one rounded portion 3a and the radius of curvature of the other rounded portion 3a are not equal, the semiconductor laser element 4 is brought closer to the rounded portion 3a side having a small radius of curvature as viewed from above. Further, the light emitting point of the semiconductor laser element 4 does not have to be one, and the semiconductor laser element 4 does not have to be one. When there are a plurality of light emitting points, the center of curvature of the rounded portion 3a may be any one of the light emitting points that is the center of adjustment, or the central light emitting point may be changed depending on the curvature of the rounded portion 3a.

  When the semiconductor laser device 1 is mounted on the housing 2, the rounded portion 3 a of the semiconductor laser device 1 is brought into contact with the contact surface 9 a of the housing 2, and the semiconductor laser device 1 is slid with respect to the housing 2. Thereby, since the thin metal plate 3 rotates while being supported by the contact surface 9a, the optical axis of the emitted light of the semiconductor laser element 4 can be easily adjusted. Further, by setting the center of curvature of the rounded portion 3a as the light emitting point of the semiconductor laser element 4, the optical axis of the semiconductor laser element 4 is translated in the paper when the optical axis of the emitted light is adjusted. Can be prevented.

(Second Embodiment)
FIG. 2 is a schematic view of the semiconductor laser device 21 and the housing 22 according to the second embodiment of the present invention as viewed from the front side. Further, in FIG. 2, the same components as those of the first embodiment shown in FIG.

  The semiconductor laser device 21 includes a thin metal plate 23 and a semiconductor laser element 4 fixed to the surface of the thin metal plate 23 via a submount 5. A resin frame 8 provided integrally with the electrode lead 7 is provided on the surface of the thin metal plate 23. That is, the thin metal plate 23 is integrated with the resin frame 8 and the electrode lead 7. Further, the inner peripheral surface of the resin frame 8 faces both side surfaces and the rear surface (surface opposite to the light emitting end surface 4a) of the semiconductor laser element 4. Further, a notch 23 b located in front of the semiconductor laser element 4 is formed at the edge of the thin metal plate 23. That is, the notch 23 b is located in the vicinity of the light emitting point of the semiconductor laser element 4. The inner wall surface of the notch 23b is a cylindrical surface. The semiconductor laser element 4 is an example of a semiconductor laser element. The thin metal plate 23 and the resin frame 8 constitute an example of the main body.

  The housing 22 includes a rectangular plate-shaped housing main body 26 and a columnar protrusion 29 provided on the surface of the housing main body 26 and capable of fitting into the notch 23b.

  When the semiconductor laser device 21 is mounted on the housing 22, the semiconductor laser device 21 is moved in the direction of the arrow in the figure, and the protrusion 29 of the housing 22 is fitted into the notch 23 b of the semiconductor laser device 21. Slide against the housing 22. As a result, the thin metal plate 23 rotates around the light emitting point of the semiconductor laser element 4 while being supported by the protrusions 29, so that the optical axis of the emitted light of the semiconductor laser element 4 can be adjusted.

  Further, since the notch 23b is provided at the edge of the thin metal plate 3, the semiconductor laser device 21 can be moved in the direction of the arrow in the figure, and the protrusion 29 can be easily fitted into the notch 23b.

  In the second embodiment, the columnar protrusion 29 is formed on the surface of the housing body 26, but a conical protrusion 39 may be formed on the surface of the housing body 26 as shown in FIG. 3. When forming the protrusion 39, the thin metal plate 33 may be provided with a notch 33b whose inner wall surface is a conical surface. It is desirable that the height of the cylindrical protrusion or conical protrusion be lower than the light emitting point of the semiconductor laser element 4 so that the laser beam is not irradiated. The light emitted from the semiconductor laser 4 spreads in a conical shape from the light emission point, and the spread becomes smaller as the light emission point is closer. Therefore, the shape of the protrusion is more preferably a conical shape. Further, when the protrusion 39 is formed on the surface of the housing body 26, although not shown, a recess into which the protrusion 39 can be fitted may be provided on the back surface of the thin metal plate 33. When the concave portion into which the projection 39 can be fitted is provided on the back surface of the thin metal plate 33, the semiconductor laser device 21 can be easily attached to the surface of the housing body 26 from above the housing 22.

  In the second embodiment, the notch 23b into which the cylindrical projection 29 can be fitted is provided at the edge of the thin metal plate 23. However, as shown in FIG. 4, the cylindrical projection 29 can be fitted. A concave portion 43 c may be provided on the back surface of the thin metal plate 43. The inner wall surface of the recess is a cylindrical surface. Further, the position of the recess 43 substantially overlaps the position of the light emitting end face 4a. That is, the recess 43 is located in the vicinity of the light emitting point of the semiconductor laser element 4.

(Third embodiment)
FIG. 5 is a schematic view of the semiconductor laser device 51 according to the third embodiment of the present invention viewed from the back side. And the schematic diagram which looked at the housing 52 of 3rd Embodiment of this invention from the surface side in FIG. 6 is shown. In FIG. 5, the same reference numerals as those in FIG. 1 are assigned to the same components as those in the first embodiment shown in FIG. 1.

  As shown in FIG. 5, the semiconductor laser device 51 includes a thin metal plate 53 in which an arc-shaped groove 53 c (which may penetrate partway through the thin metal plate 53) is provided on the back surface. The semiconductor laser element 4 is fixed to the surface of the thin metal plate 53 via a submount. The groove 53c is formed so as to substantially overlap the circumference centering on the light emitting point of the semiconductor laser element 4 (center of the front end face (light emitting end face 4a)). Further, a resin frame 8 provided integrally with the electrode lead 7 is formed on the surface of the thin metal plate 53. That is, the thin metal plate 53 is integrated with the resin frame 8 and the electrode lead 7.

  As shown in FIG. 6, the housing 52 includes a housing main body 56 and an arc-shaped protrusion 59 that is provided on the surface of the housing main body 56 and can be fitted into the groove 53 c of the thin metal plate 53. The circumferential length of the protrusion 59 is shorter than the circumferential length of the groove 53c.

  When the semiconductor laser device 51 is mounted on the housing 52, the projection 59 of the housing 22 is fitted into the groove 53 c of the semiconductor laser device 21, and the semiconductor laser device 21 is slid with respect to the housing 22. As a result, the thin metal plate 53 is rotated around the light emitting point of the semiconductor laser element 4 while being supported by the protrusion 59, so that the optical axis of the emitted light of the semiconductor laser device 51 can be adjusted.

  In the third embodiment, the groove 53c into which the arc-shaped protrusion 59 can be fitted is formed on the back surface of the thin metal plate 53. However, as shown in FIG. You may form the groove part 58c in the back surface of the resin frame 58 as an example of a resin member. The groove 58c is formed so as to substantially overlap the circumference centered on the light emitting point of the semiconductor laser element.

  In the third embodiment, one arc-shaped protrusion 59 that can be fitted into the groove 53c of the thin metal plate 53 is formed on the surface of the housing main body 56. However, as shown in FIG. Two cylindrical protrusions 69 may be formed on the surface of the housing body 66.

  The optical pickup device may be provided with the semiconductor laser device and the housing as described above.

  In the first to third embodiments and the modifications thereof, after adjusting the optical axis of the semiconductor laser element, the semiconductor laser device is fixed to the housing with an adhesive such as a photocurable resin.

FIG. 1 is a schematic view of the surface (upper surface) of the semiconductor laser device and the housing according to the first embodiment of the present invention. FIG. 2 is a schematic view of the surface (upper surface) of the semiconductor laser device and the housing according to the second embodiment of the present invention. FIG. 3 is a schematic diagram for explaining a modification of the semiconductor laser device and the housing of the second embodiment. FIG. 4 is a schematic diagram for explaining a modification of the semiconductor laser device of the second embodiment. FIG. 5 is a schematic view of the back surface (lower surface) of the semiconductor laser device according to the third embodiment of the present invention. FIG. 6 is a schematic view of the surface (upper surface) of the housing according to the third embodiment of the present invention. FIG. 7 is a schematic diagram for explaining a modification of the semiconductor laser device of the third embodiment. FIG. 8 is a schematic view for explaining a modified example of the housing of the third embodiment. FIG. 9 is a schematic view of a conventional semiconductor laser device and a housing.

Explanation of symbols

1, 21, 51 Semiconductor laser device 2, 22, 52, 62 Housing 3, 23, 33, 43 Thin metal plate 3a Round portion 3b, 33b Notch 4 Semiconductor laser element 6, 26, 56, 66 Housing body 8, 58 Resin frame 9 Guide part 9a Contact surface 29, 39, 59, 69 Protrusion 43c Recessed part 53c, 58c Groove part

Claims (18)

The main body,
A semiconductor laser element fixed to the main body,
A first rotation guide mechanism provided on the main body and capable of rotating while supporting the main body so as to be capable of adjusting a laser beam emission direction of the semiconductor laser element. A semiconductor laser device. The semiconductor laser device according to claim 1,
The semiconductor laser device according to claim 1, wherein the first rotation guide mechanism enables the main body to rotate around a vicinity of a light emitting point of the semiconductor laser element. The semiconductor laser device according to claim 1,
2. The semiconductor laser device according to claim 1, wherein the main body is made of a metal plate. The semiconductor laser device according to claim 1,
The semiconductor laser device according to claim 1, wherein the first rotation guide mechanism is a rounded portion provided at an edge of the main body. The semiconductor laser device according to claim 1,
The semiconductor laser device according to claim 1, wherein the first rotation guide mechanism is a recess provided in the main body. The semiconductor laser device according to claim 5,
2. The semiconductor laser device according to claim 1, wherein the recess is a notch provided at an edge of the main body. The semiconductor laser device according to claim 4,
An inner wall surface of the recess is a conical surface. The semiconductor laser device according to claim 1,
The semiconductor laser device according to claim 1, wherein the first rotation guide mechanism is a groove portion provided in the main body portion so as to substantially overlap a circumference centered around a light emitting point of the semiconductor laser element. The semiconductor laser device according to claim 1,
The main body portion is composed of a metal plate and a resin member provided integrally with the metal plate,
The semiconductor laser device, wherein the first rotation guide mechanism is a groove provided in the resin member so as to substantially overlap a circumference centered on the semiconductor laser element. A housing body;
A second rotation guide mechanism that is provided in the housing main body and that allows the semiconductor laser device to rotate while supporting the semiconductor laser device so that the laser beam emission direction of the semiconductor laser device can be adjusted. And housing. The housing of claim 10.
The housing, wherein the second rotation guide mechanism allows the semiconductor laser device to rotate around a light emitting point of the semiconductor laser device. The housing of claim 10.
The housing, wherein the second rotation mechanism is a guide portion provided on the housing body and having a curved surface. The housing of claim 10.
The housing, wherein the second rotation mechanism is a protrusion. The housing of claim 13.
The housing is characterized in that the shape of the protrusion is a conical shape. The housing of claim 13.
The housing is characterized in that the shape of the protrusion is an arc shape. The housing of claim 13.
The housing characterized in that the number of the protrusions is one. The housing of claim 13.
The housing characterized in that the number of the protrusions is two. A semiconductor laser device according to claim 1;
An optical pickup device comprising the housing according to claim 10.

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