JP2006066675A - WIRING PATTERN AND METHOD FOR FORMING THE SAME, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC DEVICE - Google Patents

Abstract

PROBLEM TO BE SOLVED: To shorten a process time when forming a wiring pattern.
A wiring pattern forming method for forming a wiring pattern on a substrate P having liquid repellency, wherein a lyophilic region X1 is formed by discharging and placing a lyophilic material X2 on the substrate by a droplet discharge method. And a step of forming the wiring pattern by disposing a functional liquid containing conductive fine particles on the lyophilic region, and drying and baking the functional liquid.
[Selection] Figure 3

Description

  The present invention relates to a wiring pattern and a method for forming the same, an electro-optical device, and an electronic apparatus.

  Conventionally, a photolithography method has been frequently used as a method for forming a fine wiring pattern such as a semiconductor integrated circuit. On the other hand, Patent Document 1, Patent Document 2, and the like disclose a method using a droplet discharge method. The technologies disclosed in these publications form a wiring pattern by disposing a material on a wiring pattern forming surface by discharging a functional liquid containing a wiring pattern forming material from a droplet discharge head onto a substrate. It is said to be very effective, such as being able to handle a small amount of various types of production.

By the way, in recent years, the density of circuits constituting a device has been increased, and for example, further miniaturization and thinning of wiring patterns are required.
However, when such a fine wiring pattern is to be formed by the above-described method by the droplet discharge method, it is particularly difficult to sufficiently obtain the accuracy of the wiring width. For this reason, a method has been proposed in which a bank as a partition member is provided on the substrate, a surface treatment is performed so that the upper portion of the bank is liquid repellent and the other portions are lyophilic.

On the other hand, it has also been proposed to selectively discharge a functional liquid by a droplet discharge method to a lyophilic portion of a substrate on which a wiring pattern of a lyophobic portion and a lyophilic portion is previously formed. In this case, the functional liquid is likely to be accumulated in the lyophilic portion, so that it is possible to form a wiring pattern while maintaining positional accuracy without forming a bank.
Japanese Patent Laid-Open No. 11-274671 JP 2000-216330 A

However, since the bank is formed by using a photolithography method, there is a possibility that the cost may be increased, and the process time becomes long.
Further, when the liquid repellent part and the lyophilic part are formed on the substrate in advance, a liquid repellent monomolecule is formed by forming a liquid repellent monomolecular film such as FAS on the substrate and exposing through a mask. The membrane is selectively decomposed to form a lyophilic part. As described above, also when the liquid repellent part and the lyophilic part are formed on the substrate, the exposure through the mask is required, so that the process time becomes long.

  The present invention has been made in view of the above-described problems, and an object thereof is to shorten the process time when forming a wiring pattern.

  In order to achieve the above object, a wiring pattern forming method of the present invention is a wiring pattern forming method for forming a wiring pattern on a substrate having liquid repellency, wherein the lyophilic material is added by a droplet discharge method. A step of forming a lyophilic region by discharging and arranging on a substrate; and a step of forming a wiring pattern by disposing a functional liquid containing conductive fine particles on the lyophilic region, drying and baking the functional liquid. It is characterized by.

  According to the wiring pattern forming method of the present invention having such characteristics, a lyophilic region is formed by discharging and placing a lyophilic material on a substrate using a droplet discharge method. This eliminates the need for an exposure process via a mask when forming the lyophilic region as in the prior art. Therefore, according to the wiring pattern forming method of the present invention, it is possible to shorten the process time when forming the wiring pattern.

In the wiring pattern forming method of the present invention, a photocatalytic material is used as the lyophilic material, and the lyophilic material is exposed after the lyophilic material is discharged and disposed on the substrate. Can be adopted.
By adopting such a configuration, the lyophilicity of the lyophilic material can be further improved. For this reason, the adhesive force of the wiring pattern with respect to a board | substrate can be improved. Note that it is not necessary to use a mask when exposing the lyophilic material, so that the process time can be shortened as compared with the conventional wiring pattern forming method.

In the wiring pattern forming method of the present invention, a photocatalytic material is used as the lyophilic material, and the lyophilic material is exposed before the lyophilic material is discharged and disposed on the substrate. Can also be adopted.
By adopting such a configuration, the lyophilicity of the lyophilic material can be further improved. For this reason, the adhesive force of the wiring pattern with respect to a board | substrate can be improved. Note that it is not necessary to use a mask when exposing the lyophilic material, so that the process time can be shortened as compared with the conventional wiring pattern forming method. In addition, since the exposure process for the lyophilic material can be performed separately from the process for the substrate, the process time of the process for the substrate can be shortened.

  In the wiring pattern forming method of the present invention, the photocatalytic material is any one or more of titanium oxide, zinc oxide, tin oxide, strontium titanate, tungsten oxide, bismuth oxide, and iron oxide. It is possible to adopt a configuration in which the fine particle dispersion contains the substance.

  Moreover, in the wiring pattern formation method of this invention, when using a photocatalyst material as said lyophilic material, the structure that the said lyophilic material is a silica particle can also be employ | adopted.

  In the wiring pattern forming method of the present invention, the substrate having the liquid repellency may be configured such that the liquid repellency is imparted by the step of forming the liquid repellant organic thin film on the substrate. In addition, the substrate having the liquid repellency can adopt a configuration in which liquid repellency is imparted by a plasma treatment of the surface of the substrate using a fluorocarbon compound as a reaction gas. It is also possible to adopt a configuration in which a substrate having a liquid repellency is imparted by a step of forming a liquid repellent film formed by applying a fluorine-containing polymer compound on the substrate.

  In addition, in the wiring pattern formation method of this invention, the structure that the said liquid repellent organic thin film consists of 1-10 layers of organic molecules is also employable. When the liquid repellent organic thin film is composed of organic molecules, fluorine-containing silane compounds or surfactants can be used as the organic molecules.

Further, in the wiring pattern forming method of the present invention, it is possible to adopt a configuration in which the functional liquid is discharged and disposed on the lyophilic material by a droplet discharge method.
By adopting such a configuration, the functional liquid can be disposed at a desired position without being wasted, so that the wiring can be formed at low cost.

Next, the wiring pattern of the present invention is formed by the wiring pattern forming method of the present invention.
The wiring pattern of the present invention having such characteristics is formed with a reduced process time.

Next, an electro-optical device according to the present invention includes the wiring pattern according to the present invention.
Since the electro-optical device of the present invention having such a feature includes a wiring pattern in which the process time for forming the wiring pattern is shortened, the cost is reduced.

Next, an electronic apparatus according to the present invention includes the wiring pattern according to the present invention.
Since the electronic device of the present invention having such characteristics includes a wiring pattern in which the process time for forming the wiring pattern is shortened, the cost of the electronic device itself is reduced.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS An embodiment of a wiring pattern and a method for forming the wiring pattern, an electro-optical device, and an electronic apparatus according to the invention will be described below with reference to the drawings. In the following drawings, the scale of each member is appropriately changed in order to make each member a recognizable size.

  In this embodiment, a lyophilic region is formed on a substrate by discharging and arranging a lyophilic material or ink containing a lyophilic material from a discharge nozzle of a droplet discharge head in a droplet shape by a droplet discharge method. A description will be given using an example in which conductive wiring (wiring pattern) is formed on the lyophilic region.

[Liquid material]
As the lyophilic material of the present embodiment, a photocatalytic material that exhibits better lyophilicity by ultraviolet exposure can be used. As a photocatalyst, for example, titanium oxide (TiO ₂ ), zinc oxide (ZnO), tin oxide (SnO ₂ ), strontium titanate (SrTiO ₃ ), tungsten oxide (WO ₃ ), bismuth oxide (Bi ₂ ), which are known as optical semiconductors. A fine particle dispersion containing any one or more of O ₃ ) and iron oxide (Fe ₂ O ₃ ) can be used. In addition, it is preferable to introduce oxygen defects or impurities into such a photocatalyst because the sensitivity of the photocatalyst to ultraviolet light or visible light increases.

  Among these substances, titanium dioxide is particularly preferably used because it has a high band gap energy, is chemically stable, has no toxicity, and is easily available. Titanium dioxide includes an anatase type, a rutile type, and a brookite type, and any of them can be used in the present invention, but the anatase type is particularly preferable.

Examples of the anatase type titanium dioxide include hydrochloric acid peptization type anatase type titania sol (STS-02 (average particle size: 7 nm) manufactured by Ishihara Sangyo Co., Ltd., ST-K01 manufactured by Ishihara Sangyo Co., Ltd.), nitrate peptization type Anatase type titania sol (TA-15 manufactured by Nissan Chemical Industries, Ltd. (average particle size 12 nm)) and the like can be mentioned.
Regarding the particle size of the photocatalyst, the smaller the particle size, the more effective the photocatalytic reaction occurs. Specifically, the average particle size is preferably 50 nm or less, and particularly preferably 20 nm or less.

  The photocatalyst may be used as a photocatalyst alone or in combination with a binder. When the photocatalyst is used alone, for example, when titanium dioxide is used as the substance contained in the fine particle dispersion, amorphous titania is disposed on the substrate by a droplet discharge method, and then fired to form crystalline titania. A method of changing the phase can be employed. As the amorphous titania used here, for example, hydrolysis, dehydration condensation, tetraethoxytitanium, tetraisopropoxytitanium, tetra-n-propoxytitanium, tetrabutoxytitanium, titanium inorganic salts such as titanium tetrachloride and titanium sulfate, An organic titanium compound such as tetramethoxytitanium can be obtained by hydrolysis and dehydration condensation in the presence of an acid. This amorphous titania is denatured into anatase titania by baking at 400 ° C. to 500 ° C., and denatured into rutile type titania by baking at 600 ° C. to 700 ° C.

When a photocatalyst is used by mixing with a binder, it is preferable that the binder has a high binding energy such that the main skeleton is not decomposed by photoexcitation of the photocatalyst. For example, organopolysiloxane is suitable. .
When an organopolysiloxane is used as a binder, a coating liquid is prepared by dispersing the binder made of this organopolysiloxane and a photocatalyst together with other additives in a solvent as required, and this coating liquid is prepared by a droplet discharge method. It is possible to adopt a method of discharging and arranging on the substrate, followed by drying and baking. In addition, as a solvent to be used, alcohol-type organic solvents, such as ethanol and isopropanol, are preferable.

An amorphous silica precursor can be used as the binder. This amorphous silica precursor is represented by the general formula SiX _4, X is a halogen, a methoxy group, an ethoxy group or a silicon compound an acetyl group or the like, and silanol or average molecular weight of 3,000 or less, their hydrolysates Polysiloxane is preferred.

Specific examples include tetraethoxysilane, tetraisopropoxysilane, tetra-n-propoxysilane, tetrabutoxysilane, and tetramethoxysilane. In this case, the amorphous silica precursor and the photocatalyst particles are uniformly dispersed in a non-aqueous solvent and hydrolyzed with moisture in the air on the substrate to form silanol, and then at room temperature. It is possible to employ a method of dehydration-condensation polymerization. If dehydration condensation polymerization of silanol is carried out at 100 ° C. or higher, the degree of polymerization of silanol increases and the strength of the film surface can be improved.
Moreover, these binders can be used individually or in mixture of 2 or more types.

[Droplet discharge device]
Examples of the discharge technique of the droplet discharge method include a charge control method, a pressure vibration method, an electromechanical conversion method, an electrothermal conversion method, and an electrostatic suction method. In the charge control method, a charge is applied to a material with a charging electrode, and the flight direction of the material is controlled with a deflection electrode to be discharged from a discharge nozzle. In addition, the pressure vibration method is a method in which an ultra-high pressure of about 30 kg / cm 2 is applied to the material and the material is discharged to the tip side of the discharge nozzle. When the control voltage is not applied, the material moves straight from the discharge nozzle. When discharged and a control voltage is applied, electrostatic repulsion occurs between the materials, and the materials are scattered and are not discharged from the discharge nozzle. The electromechanical conversion method utilizes the property that a piezoelectric element (piezoelectric element) is deformed by receiving a pulse-like electric signal. The piezoelectric element is deformed through a flexible substance in a space where material is stored. Pressure is applied, and the material is extruded from this space and discharged from the discharge nozzle.

  In the electrothermal conversion method, a material is rapidly vaporized by a heater provided in a space where the material is stored to generate bubbles, and the material in the space is discharged by the pressure of the bubbles. In the electrostatic attraction method, a minute pressure is applied to a space in which a material is stored, a meniscus of material is formed on the discharge nozzle, and an electrostatic attractive force is applied in this state before the material is drawn out. In addition to this, techniques such as a system that uses a change in the viscosity of a fluid due to an electric field and a system that uses a discharge spark are also applicable. The droplet discharge method has an advantage that the use of the material is less wasteful and a desired amount of the material can be accurately disposed at a desired position. The amount of one drop of the liquid material (fluid) discharged by the droplet discharge method is, for example, 1 to 300 nanograms.

  Next, an example of a droplet discharge device that discharges a liquid material using the above-described droplet discharge method will be described. In this embodiment, an ink jet apparatus will be described by ejecting (dropping) droplets from a droplet ejection head to a substrate using a droplet ejection method.

FIG. 1 is a perspective view showing a schematic configuration of the droplet discharge device IJ.
The droplet discharge device IJ includes a droplet discharge head 1, an X-axis direction drive shaft 4, a Y-axis direction guide shaft 5, a control device CONT, a stage 7, a cleaning mechanism 8, a base 9, and a heater. 15.
The stage 7 supports the substrate P on which the liquid material is arranged by the droplet discharge device IJ, and includes a fixing mechanism (not shown) that fixes the substrate P to a reference position.

  The droplet discharge head 1 is a multi-nozzle type droplet discharge head having a plurality of discharge nozzles, and the longitudinal direction and the X-axis direction are made to coincide. The plurality of discharge nozzles are provided on the lower surface of the droplet discharge head 1 at regular intervals. A liquid material is discharged from the discharge nozzle of the droplet discharge head 1 onto the substrate P supported by the stage 7.

An X-axis direction drive motor 2 is connected to the X-axis direction drive shaft 4. The X-axis direction drive motor 2 is a stepping motor or the like, and rotates the X-axis direction drive shaft 4 when a drive signal in the X-axis direction is supplied from the control device CONT. When the X-axis direction drive shaft 4 rotates, the droplet discharge head 1 moves in the X-axis direction.
The Y-axis direction guide shaft 5 is fixed so as not to move with respect to the base 9. The stage 7 includes a Y-axis direction drive motor 3. The Y-axis direction drive motor 3 is a stepping motor or the like, and moves the stage 7 in the Y-axis direction when a drive signal in the Y-axis direction is supplied from the control device CONT.

The control device CONT supplies the droplet discharge head 1 with a voltage for controlling droplet discharge. In addition, a drive pulse signal for controlling the movement of the droplet discharge head 1 in the X-axis direction is supplied to the X-axis direction drive motor 2, and a drive pulse signal for controlling the movement of the stage 7 in the Y-axis direction is sent to the Y-axis direction drive motor 3. Supply.
The cleaning mechanism 8 cleans the droplet discharge head 1. The cleaning mechanism 8 is provided with a Y-axis direction drive motor (not shown). By driving the drive motor in the Y-axis direction, the cleaning mechanism moves along the Y-axis direction guide shaft 5. The movement of the cleaning mechanism 8 is also controlled by the control device CONT.
Here, the heater 15 is a means for heat-treating the substrate P by lamp annealing, and performs evaporation and drying of the solvent contained in the liquid material disposed on the substrate P. The heater 15 is also turned on and off by the control device CONT.

  The droplet discharge device IJ has a plurality of arrays arranged in the X-axis direction on the lower surface of the droplet discharge head 1 with respect to the substrate P while relatively scanning the droplet discharge head 1 and the stage 7 supporting the substrate P. Droplets are discharged from the discharge nozzle.

FIG. 2 is a diagram for explaining the principle of discharging a liquid material by a piezo method.
In FIG. 2, a piezo element 22 is installed adjacent to a liquid chamber 21 for storing a liquid material. The liquid material is supplied to the liquid chamber 21 via a liquid material supply system 23 including a material tank that stores the liquid material. The piezo element 22 is connected to a drive circuit 24, and a voltage is applied to the piezo element 22 through the drive circuit 24 to deform the piezo element 22, whereby the liquid chamber 21 is deformed and liquid is discharged from the discharge nozzle 25. Material is dispensed. In this case, the amount of distortion of the piezo element 22 is controlled by changing the value of the applied voltage. Further, the strain rate of the piezo element 22 is controlled by changing the frequency of the applied voltage. Since the droplet discharge by the piezo method does not apply heat to the material, it has an advantage of hardly affecting the composition of the material.

[Wiring pattern forming method]
Next, as an example of an embodiment of the wiring pattern forming method of the present invention, a method for forming a conductive film wiring (wiring pattern) on a substrate will be described with reference to FIGS. The wiring pattern forming method of the present embodiment is roughly composed of a surface treatment process, a material arrangement process, an intermediate drying process, and a heat treatment / light treatment process.
Hereinafter, each process will be described in detail.

(Surface treatment process)
The surface treatment process is roughly divided into a lyophobic treatment process for making the surface of the substrate P lyophobic and a lyophilic treatment process for forming a lyophilic portion on the surface of the lyophobic substrate P according to the wiring pattern formation region. The
In the liquid repellent treatment step, the surface of the substrate P on which the wiring pattern is formed is processed to be liquid repellent with respect to the lyophilic material or the ink containing the lyophilic material. Note that when a substrate having liquid repellency is used in advance, the liquid repellency treatment step can be omitted. In the lyophobic treatment step, specifically, the difference between the predetermined contact angle with respect to the lyophilic material or the ink containing the lyophilic material and the contact angle in the lyophilic portion described in detail later is preferably 40 ° or more. Thus, the surface treatment is performed on the surface of the substrate P.
As a method for making the surface of the substrate P liquid repellent, for example, a method of forming an organic thin film on the surface of the substrate P, a plasma treatment method, a method of applying a liquid repellent polymer compound to the surface of the substrate P, or the like can be employed.

In the method of forming an organic thin film, an organic thin film is formed from organic molecules such as a silane compound and a surfactant on the surface of a substrate P on which a wiring pattern is to be formed.
The organic molecule for treating the surface of the substrate P modifies the surface properties of the substrate such as a functional group that can be physically or chemically bonded to the substrate P and a lyophilic group or a liquid repellent group on the opposite side. A functional group that controls the surface energy), and binds to the substrate P to form an organic thin film, which is ideally a monomolecular film. Among them, an organic molecule in which an organic structure that connects a functional group that can be bonded to the substrate P and a functional group that modifies the surface of the substrate on the opposite side is a linear or partially branched carbon chain of carbon To form a dense self-assembled film.

  Here, the self-assembled film is composed of a binding functional group capable of reacting with a constituent atom such as an underlayer of a substrate and other straight chain, and van der Waals interaction or fragrance between the straight chain sites. It is a film formed by orienting a compound having extremely high orientation by π-π stacking between rings. Since the organic thin film is formed by aligning single molecules, the film thickness can be extremely reduced, and the film is uniform at the molecular level. That is, since the same molecule is located on the surface of the film, uniform and excellent liquid repellency and lyophilicity can be imparted to the surface of the film.

As the compound having high orientation, for example, a silane compound represented by the following general formula (1) can be used. In Formula (1), R ¹ represents an organic group, X ¹ and X ² represent —OR ² , —R ² , —Cl, and R ² contained in X ¹ and X ² has 1 to 4 carbon atoms. And a is an integer of 1 to 3.

(1) R ¹ SiX ¹ _a X ² _(3-a)

In the silane compound represented by the general formula (1), an organic group is substituted on the silane atom, and an alkoxy group, an alkyl group, or a chlorine group is substituted on the remaining bonding group. Examples of the organic group R ¹ include, for example, phenyl group, benzyl group, phenethyl group, hydroxyphenyl group, chlorophenyl group, aminophenyl group, naphthyl group, anthrenyl group, pyrenyl group, thienyl group, pyrrolyl group, cyclohexyl group, cyclohexane Hexenyl, cyclopentyl, cyclopentenyl, pyridinyl, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, octadecyl, n- Octyl group, chloromethyl group, methoxyethyl group, hydroxyethyl group, aminoethyl group, cyano group, mercaptopropyl group, vinyl group, allyl group, acryloxyethyl group, methacryloxyethyl group, glycidoxypropyl group, acetoxy group Etc. can be illustrated.
X ¹ is a functional group for forming an alkoxy group, a chlorine group, a Si—O—Si bond, or the like, and is hydrolyzed by water to be removed as an alcohol or an acid. Examples of the alkoxy group include a methoxy group, an ethoxy group, an n-propoxy group, an isopropoxy group, an n-butoxy group, an isobutoxy group, a sec-butoxy group, and a tert-butoxy group.
The number of carbon atoms of R ² is preferably in the range of 1 to 4 from the viewpoint that the molecular weight of the alcohol to be desorbed is relatively small, can be easily removed, and the deterioration of the denseness of the formed film can be suppressed.

A typical liquid repellent silane compound represented by the general formula (1) includes a fluorine-containing alkylsilane compound. In particular, R ¹ has a structure represented by the perfluoroalkyl structure C _n F _{2n + 1} , and examples thereof include compounds represented by the general formula (2). In formula (2), n represents an integer from 1 to 18, m represents an integer from 2 to 6, and X ^1, X ² and a represent the same meaning as in the above formula (1).
By using a fluorine-containing alkylsilane compound, each compound is oriented so that a fluoroalkyl group is located on the surface of the film, and a self-assembled film is formed. Thus, uniform liquid repellency is imparted to the surface of the film. be able to.

_{(2) C n F 2n +} 1 (CH 2) m SiX 1 a X 2 (3-a)

More specifically, CF ₃ —CH ₂ CH ₂ —Si (OCH ₃ ) ₃ , CF ₃ (CF ₂ ) ₃ —CH ₂ CH ₂ —Si (OCH ₃ ) ₃ , CF ₃ (CF ₂ ) ₅ —CH ₂ CH ₂ —Si (OCH ₃ ) ₃ , CF ₃ (CF ₂ ) ₅ —CH ₂ CH ₂ —Si (OC ₂ H ₅ ) ₃ , CF ₃ (CF ₂ ) ₇ —CH ₂ CH ₂ —Si (OCH ₃₎ ) ₃ , CF ₃ (CF ₂ ) ₁₁ —CH ₂ CH ₂ —Si (OC ₂ H ₅ ) ₃ , CF ₃ (CF ₂ ) ₃ —CH ₂ CH ₂ —Si (CH ₃ ) (OCH ₃ ) ₂ , CF _{3 (CF 2) 7 -CH 2} CH 2 -Si (CH 3) (OCH 3) 2, CF 3 (CF 2) 8 -CH 2 CH 2 -Si (CH 3) (OC 2 H 5) 2, CF ₃ (CF ₂ ) ₈ —CH ₂ CH ₂ —Si (C ₂ H ₅ ) (OC ₂ H ₅ ) _{2 and the} like.

Further, ^{R 1} Gapa - can also be mentioned those having a structure represented by fluoroalkyl ether structure _{C n F 2n + 1 O (} C p F 2p O) r. Specific examples thereof include a compound represented by the following general formula (3).

_{(3) C p F 2p +} 1 O (C p F 2p O) r (CH 2) m SiX 1 a X 2 (3-a)

(In the formula, m represents an integer of 2 to 6, p represents an integer of 1 to 4, r represents an integer of 1 to 10, and X ^1, X ² and a represent the same meaning as described above. ) examples of specific _{compounds, CF 3 O (CF 2 O} ) 6 -CH 2 CH 2 -Si (OC 2 H 5) 3, CF 3 O (C 3 F 6 O) 4 -CH 2 CH 2 _{-Si (OCH 3) 3, CF} 3 O (C 3 F 6 O) 2 (CF 2 O) 3 -CH 2 CH 2 -Si (OCH 3) 3, CF 3 O (C 3 F 6 O) 8 - _{CH 2 CH 2 -Si (OCH 3} ) 3, CF 3 O (C 4 F 9 O) 5 -CH 2 CH 2 -Si (OCH 3) 3, CF 3 O (C 4 F 9 O) 5 -CH 2 _{CH 2 -Si (CH 3) (} OC 2 H 5) 2, CF 3 O (C 3 F 6 O) 4 -CH 2 CH _{-Si (C 2 H 5) (} OCH 3) 2 , and the like.

Silane compounds having a fluoroalkyl group or a perfluoroalkyl ether structure are collectively referred to as “FAS”. These compounds may be used alone or in combination of two or more. By using FAS, adhesion to the substrate P and good liquid repellency can be obtained.
As the compound having high orientation, a surfactant represented by the following general formula (A) can also be used. In formula (I), R ¹ represents a hydrophobic organic group, Y ¹ represents a hydrophilic polar group, —OH, — (CH 2 CH 2 O) nH, —COOH, —COOA, —CONH 2, —SO 3 H, —SO 3 A, -OSO3H, -OSO3A, -PO3H2, -PO3A, -NO2, -NH2, -NH3B ( ammonium salt), ≡NHB (pyridinium salt), - a ^NX ₁ 3 B (alkylammonium salts) and the like. However, A represents one or more cations, and B represents one or more anions. X ¹ represents the same alkyl group having 1 to 4 carbon atoms as described above.

R ¹ Y ¹ (A)

The surfactant represented by the general formula (A) is an amphiphilic compound, and is a compound in which a hydrophilic functional group is bonded to an oleophilic organic group R ¹ . Y ¹ represents a hydrophilic polar group, which is a functional group for bonding to or adsorbing to the substrate, and the organic group R ¹ has a new oil property and is arranged on the opposite side of the hydrophilic surface so that it is parent to the hydrophilic surface. An oil level is formed. Examples of the organic group R ¹ include, for example, phenyl group, benzyl group, phenethyl group, hydroxyphenyl group, chlorophenyl group, aminophenyl group, naphthyl group, anthrenyl group, pyrenyl group, thienyl group, pyrrolyl group, cyclohexyl group, cyclohexane Hexenyl, cyclopentyl, cyclopentenyl, pyridinyl, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, octadecyl, n- Octyl group, chloromethyl group, methoxyethyl group, hydroxyethyl group, aminoethyl group, cyano group, mercaptopropyl group, vinyl group, allyl group, acryloxyethyl group, methacryloxyethyl group, glycidoxypropyl group, acetoxy group Etc. can be illustrated.

As a typical liquid repellent surfactant represented by the general formula (A), a compound having a fluorine-containing alkyl structure may be mentioned. In particular, those having a structure in which R ¹ is represented by the perfluoroalkyl structure C _n F _{2n + 1} are useful. More _{specifically, F (CF 2 CF 2)} 1-7 -CH 2 CH 2 -N + (CH 3) 3 Cl -, C 8 F 17 SO 2 NHC 3 H 6 -N + (CH 3), _{F (CF 2 CF 2) 1-7} -CH 2 CH 2 SCH 2 CH 2 -CO 2 - Li +, C 8 F 17 SO 2 N (C 2 H 5) -CO 2 - K +, (F (CF _{2 CF 2) 1-7) CH 2} CH 2 O) 1,2 PO (O - NH 4 +) 1,2, C 10 F 21 SO 3 - NH 4 +, C 6 F 13 CH 2 CH 2 SO 3 _{H, C 6 F 13 CH 2} CH 2 SO 3 - NH 4 +, C 8 F 17 SO 2 N (C 2 H 5) - (CH 2 CH 2 O) 0-25 H, C 8 F 17 SO 2 N _{(C 2 H 5) - (} CH 2 CH 2 O) 0-25 CH 3, F (CF 2 CF 2) 1 _{7 -CH 2 CH 2 O- (CH} 2 CH 2 O) 0-25 H and the like.

  The surfactant having a fluoroalkyl group may be used alone or in combination of two or more. In addition, by using a surfactant having a fluoroalkyl group, adhesion to the substrate P and good liquid repellency can be obtained.

Furthermore, it may have an alkyl structure that does not contain fluorine, and liquid repellency can be obtained by forming a dense film on a general surfactant. Specific surfactants include n-decyltrimethylammonium chloride, n-decyltrimethylammonium bromide, n-dodecyltrimethylammonium chloride, n-dodecyltrimethylammonium bromide, n-hexadecyltrimethylammonium chloride, n-hexadecyltrimethyl. Ammonium bromide, n-octadecyltrimethylammonium chloride, n-octadecyltrimethylammonium bromide, di-n-dodecyldimethylammonium chloride, di-n-dodecyldimethylammonium bromide, n-decylpyridinium chloride, n-decylpyridinium bromide, n-dodecyl Pyridinium chloride, n-dodecylpyridinium bromide, n-dodecylpyridinium Iodide, n-tetradecylpyridinium chloride, n-tetradecylpyridinium bromide, n-hexadecylpyridinium chloride, n-hexadecylpyridinium bromide, n-hexadecylpyridinium iodide, n-octadecylpyridinium chloride, n-octadecylpyridinium bromide, n-dodecylpicolinium chloride, n-dodecylpicolinium bromide, n-octadecylpicolinium chloride, n-octadecylpicolinium bromide, n-octadecylpicolinium iodide, N, N'-dimethyl-4,4'-bipyridinium dichloride N, N′-dimethyl-4,4′-bipyridinium dibromide, N, N′-dimethyl-4,4′-bipyridinium bis (methylsulfate) G), N, N′-dimethyl-4,4′-bipyridinium bis (р-toluenesulfonate), N, N′-di (n-propyl) -4,4′-bipyridinium dichloride, N, N′-di (N-propyl) -4,4′-bipyridinium dibromide, N, N′-di (n-propyl) -4,4′-bipyridinium bis (р-toluenesulfonate), N, N′-dibenzyl-4, 4′-bipyridinium dichloride, N, N′-dibenzyl-4,4′-bipyridinium dibromide, N, N′-dibenzyl-4,4′-bipyridinium diiodide, N, N′-dibenzyl-4,4 ′ -Bipyridinium bis (р-toluenesulfonate), N, N'-diphenyl-4,4'-bipyridinium dichloride, N, N'-diphenyl-4,4'-bipyridinium dibromide N, N′-bis (3-sulfonatepropyl) -4,4′-bipyridinium, 1,3-bis {N- (N′-methyl-4,4′-bipyridyl)} propanetetrachloride, 1,3- Bis {N- (N'-methyl-4,4'-bipyridyl)} propane tetrabromide, 1,3-bis {N- (N'-benzyl-4,4'-bipyridyl)} propane tetrachloride, 1, 3-bis {N- (N'-benzyl-4,4'-bipyridyl)} propane tetrabromide, 1,4-bis {N- (N'-methyl-4,4'-bipyridyl)} butane tetrachloride, 1,4-bis {N- (N'-methyl-4,4'-bipyridyl)} butane tetrabromide, 1,4-bis {N- (N'-benzyl-4,4'-bipyridyl)} butane tetra Chloride, 1,4-bis {N- (N'- Benzyl-4,4′-bipyridyl)} butane tetrabromide, α, α′-bis {N- (N′-methyl-4,4′-bipyridyl)}-o-xylene tetrachloride, α, α′-bis {N- (N′-methyl-4,4′-bipyridyl)}-o-xylene tetrabromide, α, α′-bis {N- (N′-benzyl-4,4′-bipyridyl)}-o— Xylene tetrachloride, α, α′-bis {N- (N′-benzyl-4,4′-bipyridyl)}-o-xylene tetrabromide, α, α′-bis {N- (N′-methyl-4) , 4′-bipyridyl)}-m-xylene tetrachloride, α, α′-bis {N- (N′-methyl-4,4′-bipyridyl)}-m-xylene tetrabromide, α, α′-bis {N- (N′-benzyl-4,4′-bipyridyl)}-m-xylene tetrachrome Id, α, α′-bis {N- (N′-benzyl-4,4′-bipyridyl)}-m-xylene tetrabromide, α, α′-bis {N- (N′-methyl-4,4) '-Bipyridyl)}-p-xylene tetrachloride, α, α'-bis {N- (N'-methyl-4,4'-bipyridyl)}-p-xylene tetrabromide, α, α'-bis {N -(N'-benzyl-4,4'-bipyridyl)}-p-xylene tetrachloride, α, α'-bis {N- (N'-benzyl-4,4'-bipyridyl)}-p-xylene tetra Bromide, Nn-dodecyl-N′-methyl-4,4′-bipyridinium dichloride, Nn-dodecyl-N′-methyl-4,4′-bipyridinium bromide iodide, Nn-dodecyl-N ′ -Methyl-4,4'-bipyridinium bromidemethyl Rufate, Nn-dodecyl-N′-benzyl-4,4′-bipyridinium dichloride, Nn-dodecyl-N′-benzyl-4,4′-bipyridinium dibromide, Nn-dodecyl-N′- Benzyl-4,4′-bipyridinium chloride bromide, Nn-hexadecyl-N′-methyl-4,4′-bipyridinium dichloride, Nn-hexadecyl-N′-methyl-4,4′-bipyridinium bromide iodide Nn-hexadecyl-N′-methyl-4,4′-bipyridinium bromide methyl sulfate, Nn-hexadecyl-N′-benzyl-4,4′-bipyridinium dichloride, Nn-hexadecyl-N ′ -Benzyl-4,4'-bipyridinium dibromide, Nn-octadecyl-N'-methyl-4,4'-bi Lidinium dichloride, Nn-octadecyl-N′-methyl-4,4′-bipyridinium bromide iodide, Nn-octadecyl-N′-methyl-4,4′-bipyridinium bromide methylsulfate, Nn -Octadecyl-N'-benzyl-4,4'-bipyridinium dibromide, N, N'-di-n-dodecyl-4,4'-bipyridinium dichloride, N, N'-di-n-dodecyl-4,4 '-Bipyridinium dibromide, N, N'-di-n-hexadecyl-4,4'-bipyridinium dichloride, N, N'-di-n-hexadecyl-4,4'-bipyridinium dibromide, 1,3-bis {N- (N'-n-dodecyl-4,4'-bipyridyl)} propane tetrachloride, 1,3-bis {N- (N'-n-dodecyl-4,4 ' Bipyridyl)} propane tetrabromide, 1,4-bis {N- (N'-n-dodecyl-4,4'-bipyridyl)} butane tetrabromide, 1,6-bis {N- (N'-n-dodecyl) -4,4'-bipyridyl)} hexane tetrabromide, 1,3-bis {N- (N'-n-hexadecyl-4,4'-bipyridyl)} propane tetrabromide, 1,4-bis {N- ( N′-n-hexadecyl-4,4′-bipyridyl)} butane tetrabromide, 1,6-bis {N- (N′-n-hexadecyl-4,4′-bipyridyl)} hexane tetrabromide, α, α '-Bis {N- (N'-n-dodecyl-4,4'-bipyridyl)}-o-xylene tetrachloride, α, α'-bis {N- (N'-n-dodecyl-4,4' -Bipyridyl)}-o-xylene tetrabloma Α, α′-bis {N- (N′-n-dodecyl-4,4′-bipyridyl)}-m-xylene tetrachloride, α, α′-bis {N- (N′-n-dodecyl) -4,4'-bipyridyl)}-m-xylene tetrabromide, α, α'-bis {N- (N'-n-dodecyl-4,4'-bipyridyl)}-p-xylene tetrachloride, α, α′-bis {N- (N′-n-dodecyl-4,4′-bipyridyl)}-p-xylene tetrabromide, α, α′-bis {N- (N′-n-hexadecyl-4,4) '-Bipyridyl)}-o-xylene tetrachloride, α, α'-bis {N- (N'-n-hexadecyl-4,4'-bipyridyl)}-o-xylene tetrabromide, α, α'-bis {N- (N′-n-hexadecyl-4,4′-bipyridyl)}-m-xylene tetrachloro , Α, α′-bis {N- (N′-n-hexadecyl-4,4′-bipyridyl)}-m-xylene tetrabromide, α, α′-bis {N- (N′-n-hexadecyl- 4,4′-bipyridyl)}-p-xylene tetrachloride, α, α′-bis {N- (N′-n-hexadecyl-4,4′-bipyridyl)}-p-xylene tetrabromide, cyclohexyl acrylate, Cyclohexyl methacrylate, cyclohexyl acrylamide, cyclohexyl methacrylamide, N-cyclohexyl-N-methyl acrylamide, N-cyclohexyl-N-methyl methacrylamide, cyclohexyl methyl acrylate, cyclohexyl methyl methacrylate, cyclohexyl methyl acrylamide, cyclohexyl methyl methacrylamide, N-cyclohexyl Silmethyl-N-methylacrylamide, N-cyclohexylmethyl-N-methylmethacrylamide, phenylacrylate, phenylmethacrylate, phenylacrylamide, phenylmethacrylamide, N-methyl-N-phenylacrylamide, N-methyl-N-phenylmethacrylamide, Benzyl acrylate, benzyl methacrylate, benzyl acrylamide, benzyl methacrylamide, N-benzyl-N-methyl acrylamide, N-benzyl-N-methyl methacrylamide, 1-norbornyl acrylate, 1-norbornyl methacrylate, 1-norborn Nylacrylamide, 1-norbornylmethacrylamide, N-methyl-N- (1-norbornyl) acrylamide, N-methyl-N- (1-norbornyl) me Tacrylamide, cyclooctyl acrylate, cyclooctyl methacrylate, cyclooctyl acrylamide, cyclooctyl methacrylamide, N-cyclooctyl-N-methyl acrylamide, N-cyclooctyl-N-methyl methacrylamide, adamantyl acrylate, adamantyl methacrylate, adamantyl acrylamide, adamantyl Methacrylamide, N-adamantyl-N-methylacrylamide, N-adamantyl-N-methylmethacrylamide, 1-naphthylacrylate, 1-naphthylmethacrylate, 1-naphthylacrylamide, 1-naphthylmethacrylamide, N-methyl-N- ( 1-naphthyl) acrylamide, N-methyl-N- (1-naphthyl) methacrylamide, 2-naphthyl acrylate 2-naphthyl methacrylate, 2-naphthyl acrylamide, 2-naphthyl methacrylamide, N-methyl-N- (2-naphthyl) acrylamide, N-methyl-N- (2-naphthyl) methacrylamide, n-dodecyl acrylate, n- Dodecyl methacrylate, n-dodecyl acrylamide, n-dodecyl methacrylamide, Nn-dodecyl-N-methyl acrylamide, Nn-dodecyl-N-methyl methacrylamide, cyclododecyl acrylate, cyclododecyl methacrylate, cyclododecyl acrylamide, cyclo Dodecyl methacrylamide, N-cyclododecyl-N-methylacrylamide, N-cyclododecyl-N-methylmethacrylamide, n-hexadecyl acrylate, n-hexadecyl methacrylate, n Hexadecylacrylamide, n-hexadecylmethacrylamide, Nn-hexadecyl-N-methylacrylamide, Nn-hexadecyl-N-methylmethacrylamide, n-octadecylacrylate, n-octadecylmethacrylate, n-octadecylacrylamide, n -Octadecyl methacrylamide, Nn-octadecyl-N-methylacrylamide, Nn-octadecyl-N-methylmethacrylamide, di-n-octylacrylamide, di-n-octylmethacrylamide, di-n-decylacrylamide, Di-n-de



Sil methacrylamide, di-n-dodecyl acrylamide, di-n-dodecyl methacrylamide, 9-anthracene methyl acrylate, 9-anthracene methyl methacrylate, 9-anthracene methyl acrylamide, 9-anthracene methyl methacrylamide, 9-phenanthrene methyl acrylate, 9-phenanthrenemethyl methacrylate, 9-phenanthrenemethylacrylamide, 9-phenanthrenemethylmethacrylamide, N-methyl-N- (9-phenanthrenemethyl) acrylamide, N-methyl-N- (9-phenanthrenemethyl) methacrylamide, 1- Pyrenemethyl acrylate, 1-pyrenemethyl methacrylate, 1-pyrenemethylacrylamide, 1-pyrenemethylmethacrylamide, N-methyl-N- 1-pyrenemethyl) acrylamide, N- methyl-N-(1-pyrenemethyl) methacrylamide, 4-acryloyloxymethyl phthalocyanine, and the like.

  An organic thin film composed of an organic molecule such as a silane compound or a surfactant is prepared by placing the raw material compound and the substrate P in the same sealed container and leaving it at room temperature for about 2 to 3 days. Formed on P. Further, by holding the entire sealed container at 80 to 140 ° C., it is formed on the substrate in about 1 to 3 hours. These are formation methods from the gas phase, but a self-assembled film can also be formed from the liquid phase. For example, the self-assembled film is formed on the substrate by immersing the substrate in a solution containing the raw material compound for 30 minutes to 6 hours, washing and drying. Moreover, a self-assembled film can be formed by immersion for 5 minutes to 2 hours by heating a solution containing a raw material compound to 40 to 80 ° C. Before forming the self-assembled film, it is desirable that the substrate surface be pretreated by irradiating with ultraviolet light, or by washing with plasma treatment, acid or alkali solution.

  The organic thin film may have a certain thickness, and the thickness is preferably 1 to 10 layers of organic molecules.

  On the other hand, in the plasma processing method, plasma irradiation is performed on the substrate P under normal pressure or vacuum. Various types of gas used for the plasma treatment can be selected in consideration of the surface material of the substrate P on which the wiring pattern is to be formed. As the processing gas, a fluorocarbon-based compound can be preferably used, and examples thereof include tetrafluoromethane, perfluorohexane, and perfluorodecane.

  In the case of applying a liquid repellent polymer compound to the surface of the substrate P, for example, a liquid repellent layer can be formed by applying a fluorine-containing polyimide resin or the like onto the substrate P using a spin coat method or the like. . The liquid repellent polymer compound is not limited to the above polyimide resin, and a monomer, oligomer or polymer containing a fluorine atom in the molecule can be used. For example, polytetrafluoroethylene (PTFE) , Ethylene-4-fluoroethylene copolymer, hexafluoropropylene-4-fluoroethylene copolymer, polyvinylidene fluoride (PVdF), poly (pentadecafluoroheptylethyl methacrylate) (PPFMA), poly (perfluorooctylethyl) Acrylate) and other long-chain perfluoroalkyl structures such as ethylene, acrylate, methacrylate, vinyl, urethane, and silicone polymers.

In addition, the process which processes the surface of the board | substrate P to liquid repellency may be performed by sticking to the surface of the board | substrate P the film which has desired liquid repellency, for example, the polyimide film processed by the tetrafluoroethylene, etc. Good. Further, a polyimide film having high liquid repellency may be used as the substrate P as it is.
Thus, by performing organic thin film formation, plasma treatment, and application of a liquid repellent polymer, a liquid repellent film F is formed on the surface of the substrate P as shown in FIG. A substrate P having liquidity can be formed.

  Next, the lyophilic portion H1 (lyophilic region) is formed by placing the lyophilic material or the ink containing the lyophilic material in the region where the wiring pattern is to be formed by the above-described droplet discharge device IJ. .

Hereinafter, the lyophilic process will be described.
First, as shown in FIG. 3B, the discharge head 1 of the droplet discharge device IJ is arranged on the region of the substrate P where the lyophilic part is formed, and the lyophilic material or lyophilic material is discharged from the discharge nozzle. By discharging the containing ink X2, as shown in FIG. 3C, the lyophilic material or the ink containing the lyophilic material is disposed on the region where the lyophilic portion is formed. Here, for example, by selectively using a lyophilic material or an ink containing a lyophilic material having a surface tension larger than that of a functional liquid for forming a wiring pattern described later, the functional liquid is supplied to the droplet discharge device IJ. Thus, the lyophilic material or the ink containing the lyophilic material can be arranged in a narrower region than in the case of the ejection arrangement. Thereafter, the lyophilic material or the ink containing the lyophilic material is dried as necessary to form the lyophilic portion H1 as shown in FIG. As a result, the lyophilic part H1 and the liquid repellent part H2 are formed on the substrate P. Here, when a photocatalyst is used as the lyophilic material, for example, exposure to ultraviolet rays having a wavelength of 880 nm or less improves the lyophilicity and provides excellent adhesion to a wiring pattern described later. Can be formed. Here, in the wiring formation method of this embodiment, since the photocatalyst is exposed by ultraviolet rays having a wavelength of 880 nm or less, even when the entire substrate P is exposed, the liquid repellency of the substrate P is not impaired. The lyophilic material can be exposed.
As described above, according to the wiring pattern forming method of the present embodiment, the lyophilic portion H1 is formed using the droplet discharge device IJ. No exposure processing is required. Therefore, according to the wiring pattern forming method of the present embodiment, it is possible to shorten the process time when forming the wiring pattern.

  In this embodiment, after the lyophilic material is disposed on the substrate P, the lyophilic material is exposed to ultraviolet rays. However, before the lyophilic material is placed on the substrate P, the lyophilic material can be exposed to ultraviolet light. In such a case, since the exposure process of the photocatalyst (lyophilic material) can be separated from the wiring pattern forming process on the substrate P, the wiring pattern forming process on the substrate P can be further shortened.

(Material placement process)
Next, using the above-described droplet discharge device IJ, the functional liquid is discharged and disposed on the lyophilic portion H1. Here, the functional liquid X1 using silver as the conductive fine particles is discharged. Note that the droplet discharge conditions may be, for example, an ink weight of 4 ng / dot and an ink speed (discharge speed) of 5 to 7 m / sec. The atmosphere for discharging the droplets is preferably set to a temperature of 60 ° C. or lower and a humidity of 80% or lower. Thereby, it is possible to perform stable droplet discharge without clogging the discharge nozzle of the droplet discharge head 1.

  As the conductive fine particles, in addition to silver, metal fine particles containing at least one of gold, copper, aluminum, palladium, ITO, and nickel, oxides thereof, and conductivity Polymer or superconductor fine particles can be used. In order to improve the dispersibility, these conductive fine particles can be used by coating the surface with an organic solvent such as xylene or toluene, citric acid or the like. The particle diameter of the conductive fine particles is preferably 1 nm or more and 0.1 μm or less. If it is larger than 0.1 μm, there is a risk of clogging in the discharge nozzle of the droplet discharge head described later. On the other hand, if the thickness is smaller than 1 nm, the volume ratio of the coding material to the conductive fine particles becomes large, and the ratio of the organic matter in the obtained film becomes excessive. In the case of using a coating material coated with conductive fine particles, it is also possible to use an ink that does not exhibit conductivity in the form of a liquid, but exhibits conductivity when dried or sintered.

  As the liquid dispersion medium or solvent containing at least one of the conductive fine particles and the organometallic compound, those having a vapor pressure of 0.001 mmHg or more and 200 mmHg or less (about 0.133 Pa or more and 26600 Pa or less) at room temperature are preferable. . This is because if the vapor pressure is higher than 200 mmHg, the dispersion medium or the solvent rapidly evaporates after discharge, making it difficult to form a good film.

  The vapor pressure of the dispersion medium or solvent is more preferably 0.001 mmHg to 50 mmHg (about 0.133 Pa to 6650 Pa). This is because if the vapor pressure is higher than 50 mmHg, nozzle clogging due to drying tends to occur when droplets are ejected by the droplet ejection method, and stable ejection becomes difficult. On the other hand, in the case of a dispersion medium or solvent whose vapor pressure at room temperature is lower than 0.001 mmHg, drying becomes slow and the dispersion medium or solvent tends to remain in the film, and after heat and / or light treatment in the subsequent step. It becomes difficult to obtain a good conductive film.

  The dispersion medium is not particularly limited as long as it can disperse the conductive fine particles and does not cause aggregation. For example, in addition to water, alcohols such as methanol, ethanol, propanol, butanol, n-heptane, n-octane, decane, dodecane, tetradecane, toluene, xylene, cymene, durene, indene, dipentene, tetrahydronaphthalene, decahydro Hydrocarbon compounds such as naphthalene and cyclohexylbenzene, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol methyl ethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, 1,2-dimethoxyethane, bis (2- Methoxyethyl) ether, ether compounds such as p-dioxane, propylene carbonate, γ- Butyrolactone, N- methyl-2-pyrrolidone, dimethylformamide, dimethyl sulfoxide, can be exemplified polar compounds such as cyclohexanone. Of these, water, alcohols, hydrocarbon compounds, and ether compounds are preferable and more preferable dispersion media in terms of fine particle dispersibility, dispersion stability, and ease of application to the droplet discharge method. Examples thereof include water and hydrocarbon compounds.

    The dispersoid concentration when the conductive fine particles are dispersed in the dispersion medium is preferably 1% by mass or more and 80% by mass or less, and can be adjusted according to the desired film thickness of the conductive film. If it exceeds 80% by mass, aggregation tends to occur and it becomes difficult to obtain a uniform film.

  The surface tension of the conductive fine particle dispersion is preferably in the range of 0.02 N / m to 0.07 N / m. When ink is ejected by the droplet ejection method, if the surface tension is less than 0.02 N / m, the wettability of the ink with respect to the nozzle surface increases, and thus flight bending tends to occur, and if the surface tension exceeds 0.07 N / m. Since the shape of the meniscus at the nozzle tip is not stable, it becomes difficult to control the discharge amount and the discharge timing. In order to adjust the surface tension, a small amount of a surface tension regulator such as a fluorine-based, silicone-based, or nonionic-based material may be added to the dispersion within a range that does not significantly reduce the contact angle with the substrate. The nonionic surface tension modifier improves the wettability of the ink to the substrate, improves the leveling property of the film, and helps prevent the occurrence of fine irregularities on the film. The surface tension modifier may contain an organic compound such as alcohol, ether, ester, or ketone, if necessary.

  The viscosity of the dispersion is preferably 1 mPa · s to 50 mPa · s. When ejecting ink as droplets using the droplet ejection method, if the viscosity is less than 1 mPa · s, the nozzle periphery is easily contaminated by the outflow of the ink, and if the viscosity is greater than 50 mPa · s, the nozzle The frequency of clogging in the holes increases, and it becomes difficult to smoothly discharge droplets.

  As such a functional liquid X1, specifically, a dispersion medium of a silver fine particle dispersion (trade name “Perfect Silver” manufactured by Vacuum Metallurgical Co., Ltd.) in which silver fine particles having a diameter of about 10 nm are dispersed in an organic solvent is replaced with tetradecane. Then, it can be diluted and adjusted to have a concentration of 60 wt%, a viscosity of 8 mPa · s, and a surface tension of 0.022 N / m.

In this material arrangement step, as shown in FIG. 4A, the functional liquid X1 is discharged as droplets from the droplet discharge head 1.
At this time, since the liquid repellent part H2 is given liquid repellency, as shown in FIG. 4B, even if a part of the discharged functional liquid X1 is placed on the liquid repellent part H2, the liquid repellent part It is repelled from H2 and accumulates on the lyophilic part H1 as shown in FIG. 4 (c). Furthermore, since the lyophilic part H1 is imparted with lyophilicity, the discharged functional liquid X1 is more likely to spread in the lyophilic part H1, so that the functional liquid X1 is within a predetermined position without being divided. Thus, the lyophilic part H1 can be arranged more uniformly. Here, when the line width of the lyophilic portion H1 is smaller than the landing diameter of the functional liquid X1, a wiring pattern having a line width equal to or smaller than the landing diameter of the functional liquid X1 can be formed.

(Intermediate drying process)
After discharging a predetermined amount of the functional liquid X1 to the lyophilic part H1, a drying process is performed as necessary to remove the dispersion medium. This drying process can be performed by lamp annealing, for example, in addition to a process using a normal hot plate or an electric furnace for heating the substrate P. The light source used for lamp annealing is not particularly limited, but excimer laser such as infrared lamp, xenon lamp, YAG laser, argon laser, carbon dioxide laser, XeF, XeCl, XeBr, KrF, KrCl, ArF, ArCl, etc. Can be used as a light source.
In general, these light sources have an output in the range of 10 W to 5000 W, but in the present embodiment, a range of 100 W to 1000 W is sufficient.
By this intermediate drying step, a functional liquid layer containing silver as conductive fine particles is formed on the lyophilic part H1.

  When the functional liquid X1 is thus placed on the lyophilic part H1, the intermediate drying treatment of the functional liquid X1 is performed under heating conditions of, for example, 80 ° C. for 30 seconds. The heating temperature in this drying step is set to a temperature at which the conductive fine particles in the functional liquid X1 are not bonded to each other, that is, a temperature equal to or lower than the sintering temperature. When such a heat treatment is performed, the liquid component in the functional liquid X1 evaporates, and the aggregate of conductive fine particles remaining on the lyophilic portion H1 is substantially the liquid component removed.

  As the heating means used in the drying step, a heating lamp can be used in addition to a normal hot plate, an electric furnace or the like. The light source used for lamp annealing is not particularly limited, but an infrared lamp, a xenon lamp, a YAG laser, an argon laser, a carbon dioxide laser, an excimer laser such as XeF, XeCl, XeBr, KrF, KrCl, ArF, ArCl, etc. is used as a light source. Can be used. In general, these light sources have an output in the range of 10 W to 5000 W, but in the present embodiment, a range of 100 W to 1000 W is sufficient.

(Sintering / light treatment process)
The dried film after the discharging process needs to completely remove the dispersion medium in order to improve the electrical contact between the fine particles. Further, when a coating material such as an organic material is coated on the surface of the conductive fine particles in order to improve dispersibility, it is also necessary to remove this coating material. Therefore, the substrate P after the discharge process is subjected to heat treatment and / or light treatment.

The sintering treatment and / or light treatment is usually performed in the air, but can be performed in an inert gas atmosphere such as nitrogen, argon, helium, etc., if necessary. The treatment temperature of heat treatment and / or light treatment depends on the boiling point (vapor pressure) of the dispersion medium, the type and pressure of the atmospheric gas, the thermal behavior such as fine particle dispersibility and oxidation, the presence and amount of coating material, It is determined appropriately in consideration of the heat resistant temperature.
For example, in order to remove the coating material made of organic matter, it is necessary to bake at about 300 ° C. In the case where a substrate such as plastic is used, it is preferably performed at a temperature between room temperature and 100 ° C.
Through the above steps, as shown in FIG. 4D, the wiring pattern 33 made of silver is formed on the lyophilic portion H1.
It should be noted that the functional liquid contains not only conductive fine particles having conductivity in advance, but also a material that exhibits conductivity by heat treatment or light treatment, and the wiring pattern 33 is made conductive in the main sintering treatment / light treatment step. It may be expressed. Thus, the conductive fine particles of the present invention include a material that exhibits conductivity by post-treatment such as sintering / light treatment.

In the intermediate drying step and the sintering treatment / light treatment step, the substrate P is subjected to heat treatment or light irradiation treatment. The conditions for the heat treatment or light irradiation treatment are the boiling point (vapor pressure) of the dispersion medium, It is appropriately determined in consideration of the type and pressure of the atmospheric gas, the thermal behavior such as fine particle dispersibility and oxidation, the presence and amount of coating material, the heat-resistant temperature of the substrate, and the like.
For example, when the conductive fine particles are covered with a coating material, it is necessary to remove the coating material before the above-described sintering step, and thus the heating is performed to about 300 ° C. in the sintering step.

  And the wiring pattern 33 is formed on the board | substrate P by the above process. In the wiring pattern forming method of this embodiment, the adhesion of the wiring pattern in the lyophilic portion is improved as compared with the case where the lyophilic portion is formed by exposing and decomposing the lyophobic film F. Can be made. Therefore, peeling of the wiring pattern 33 can be suppressed, and a wiring pattern with higher reliability can be formed.

[Electro-optical device]
A liquid crystal display device which is an example of the electro-optical device of the invention will be described. FIG. 5 is a plan view of the liquid crystal display device according to the present invention as seen from the counter substrate side shown together with each component, and FIG. 6 is a cross-sectional view taken along the line HH ′ of FIG. FIG. 7 is an equivalent circuit diagram of various elements and wirings in a plurality of pixels formed in a matrix in the image display region of the liquid crystal display device, and FIG. 8 is a partial enlarged cross-sectional view of the liquid crystal display device.

  5 and 6, the liquid crystal display device (electro-optical device) 100 according to the present embodiment is bonded to a pair of TFT array substrate 10 and counter substrate 20 by a sealing material 52 which is a photocurable sealing material. The liquid crystal 50 is sealed and held in the region partitioned by the sealing material 52. The sealing material 52 is formed in a frame shape closed in a region within the substrate surface.

  A peripheral parting 53 made of a light shielding material is formed in a region inside the region where the sealing material 52 is formed. A data line driving circuit 201 and a mounting terminal 202 are formed along one side of the TFT array substrate 10 in a region outside the sealing material 52, and the scanning line driving circuit 204 is formed along two sides adjacent to the one side. Is formed. On the remaining side of the TFT array substrate 10, a plurality of wirings 205 are provided for connecting between the scanning line driving circuits 204 provided on both sides of the image display area. Further, at least one corner of the counter substrate 20 is provided with an inter-substrate conductive material 206 for establishing electrical continuity between the TFT array substrate 10 and the counter substrate 20.

  Instead of forming the data line driving circuit 201 and the scanning line driving circuit 204 on the TFT array substrate 10, for example, a TAB (Tape Automated Bonding) substrate on which a driving LSI is mounted and a peripheral portion of the TFT array substrate 10 The terminal group formed in the above may be electrically and mechanically connected via an anisotropic conductive film. In the liquid crystal display device 100, the type of liquid crystal 50 to be used, that is, an operation mode such as a TN (Twisted Nematic) mode, a C-TN method, a VA method, an IPS method, or a normally white mode / normally black mode. According to the above, a retardation plate, a polarizing plate and the like are arranged in a predetermined direction, but the illustration is omitted here. In the case where the liquid crystal display device 100 is configured for color display, for example, red (R), green (G), blue, and the like are disposed in a region of the counter substrate 20 facing each pixel electrode (to be described later) of the TFT array substrate 10. The color filter (B) is formed together with the protective film.

  In the image display region of the liquid crystal display device 100 having such a structure, as shown in FIG. 7, a plurality of pixels 100a are configured in a matrix, and each of these pixels 100a has a pixel switching region. TFT (switching element) 30 is formed, and a data line 6 a for supplying pixel signals S 1, S 2,..., Sn is electrically connected to the source of the TFT 30. Pixel signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. . Further, the scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2,..., Gm are applied to the scanning line 3a in a pulse-sequential manner in this order at a predetermined timing. It is configured.

  The pixel electrode 19 is electrically connected to the drain of the TFT 30, and the pixel signal S1, S2,..., Sn supplied from the data line 6a is turned on by turning on the TFT 30 as a switching element for a certain period. Write to the pixel at a predetermined timing. The pixel signals S1, S2,..., Sn written in the liquid crystal via the pixel electrode 19 in this way are held for a certain period with the counter electrode 121 of the counter substrate 20 shown in FIG. In order to prevent the held pixel signals S1, S2,..., Sn from leaking, a storage capacitor 60 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 19 and the counter electrode 121. For example, the voltage of the pixel electrode 19 is held by the storage capacitor 60 for a time that is three orders of magnitude longer than the time when the source voltage is applied. Thereby, the charge retention characteristics are improved, and the liquid crystal display device 100 with a high contrast ratio can be realized.

  FIG. 8 is a partially enlarged cross-sectional view of the liquid crystal display device 100 having the bottom gate type TFT 30. The gate wiring 61 (formed by the pattern forming method of the above embodiment is formed on the glass substrate P constituting the TFT array substrate 10. Wiring pattern) is formed.

A semiconductor layer 63 made of an amorphous silicon (a-Si) layer is stacked on the gate wiring 61 with a gate insulating film 62 made of SiNx interposed therebetween. A portion of the semiconductor layer 63 facing the gate wiring portion is a channel region. On the semiconductor layer 63, junction layers 64a and 64b made of, for example, an n ⁺ type a-Si layer for obtaining an ohmic junction are stacked, and the channel is protected on the semiconductor layer 63 in the central portion of the channel region. An insulating etch stop film 65 made of SiNx is formed. The gate insulating film 62, the semiconductor layer 63, and the etch stop film 65 are patterned as shown in the figure by performing resist coating, photosensitive / developing, and photoetching after vapor deposition (CVD).

  Further, the bonding electrodes 64a and 64b and the pixel electrode 19 made of ITO are formed in the same manner, and are patterned as shown in the figure by performing photoetching. Then, banks 66... Are formed on the pixel electrode 19, the gate insulating film 62 and the etch stop film 65, and source lines and drain lines are formed between the banks 66 using the above-described droplet discharge device IJ. be able to. These source lines and drain lines can also be configured as a pattern according to the present invention.

  Thus, in this embodiment, since the gate line 61 is formed by the wiring pattern formation method of this invention, the process time at the time of manufacturing a liquid crystal display device can be shortened. Therefore, the cost of the liquid crystal display device is reduced. In addition, according to the wiring pattern forming method of the present invention, since the adhesion between the wiring pattern and the substrate can be improved, a more reliable liquid crystal display device can be manufactured.

In the above embodiment, the TFT 30 is used as a switching element for driving the liquid crystal display device 100. However, the present invention can be applied to, for example, an organic EL (electroluminescence) display device in addition to the liquid crystal display device. An organic EL display device has a structure in which a thin film containing fluorescent inorganic and organic compounds is sandwiched between a cathode and an anode, and excitons are obtained by injecting electrons and holes into the thin film to excite them. It is an element that generates (exciton) and emits light by utilizing light emission (fluorescence / phosphorescence) when the exciton is recombined. Then, on the substrate having the TFT 30 described above, among the fluorescent materials used for the organic EL display element, a material exhibiting each emission color of red, green and blue, that is, a light emitting layer forming material and a hole injection / electron transport layer are provided. A self-luminous full-color EL device can be manufactured by using ink as a material to be formed and patterning each.
The range of the device (electro-optical device) in the present invention includes such an organic EL device, and it is possible to obtain an organic EL device that is reduced in cost and excellent in reliability.

FIG. 9 is a side sectional view of an organic EL device in which some components are manufactured by the droplet discharge device IJ. The schematic configuration of the organic EL device will be described with reference to FIG.
In FIG. 9, an organic EL device 301 includes an organic EL element 302 including a substrate 311, a circuit element unit 321, a pixel electrode 331, a bank unit 341, a light emitting element 351, a cathode 361 (counter electrode), and a sealing substrate 371. In addition, wiring of a flexible substrate (not shown) and a driving IC (not shown) are connected. The circuit element unit 321 is configured by forming TFTs 30 as active elements on a substrate 311 and arranging a plurality of pixel electrodes 331 on the circuit element unit 321. And the gate wiring 61 which comprises TFT30 is formed with the formation method of the wiring pattern of embodiment mentioned above.

  Bank portions 341 are formed in a lattice shape between the pixel electrodes 331, and light emitting elements 351 are formed in the recess openings 344 generated by the bank portions 341. Note that the light emitting element 351 includes an element that emits red light, an element that emits green light, and an element that emits blue light. Accordingly, the organic EL device 301 realizes full-color display. Yes. The cathode 361 is formed on the entire upper surface of the bank portion 341 and the light emitting element 351, and a sealing substrate 371 is laminated on the cathode 361.

  The manufacturing process of the organic EL device 301 including the organic EL element includes a bank part forming step for forming the bank part 341, a plasma processing step for appropriately forming the light emitting element 351, and a light emitting element formation for forming the light emitting element 351. A process, a counter electrode forming process for forming the cathode 361, and a sealing process for stacking and sealing the sealing substrate 371 on the cathode 361.

The light emitting element forming step is to form the light emitting element 351 by forming the hole injection layer 352 and the light emitting layer 353 on the concave opening 344, that is, the pixel electrode 331. The hole injection layer forming step and the light emitting layer forming step It is equipped with. Then, in the hole injection layer forming step, the liquid material for forming the hole injection layer 352 is discharged onto each pixel electrode 331, and the discharged liquid material is dried to form holes. A first drying step for forming the injection layer 352. The light emitting layer forming step includes a second discharge step of discharging a liquid material for forming the light emitting layer 353 onto the hole injection layer 352, and drying the discharged liquid material to form the light emitting layer 353. And a second drying step to be formed. As described above, the light emitting layer 353 is formed of three types of materials corresponding to the three colors of red, green, and blue. Therefore, the second discharge process includes three types of the light emitting layer 353. There are three steps for discharging the material to each.
In this light emitting element forming step, the above-described droplet discharge device IJ can be used in the first discharging step in the hole injection layer forming step and the second discharging step in the light emitting layer forming step.

  In the above-described embodiment, the gate wiring of the TFT (thin film transistor) is formed using the pattern forming method according to the present invention. However, other components such as a source electrode, a drain electrode, and a pixel electrode are manufactured. Is also possible. Hereinafter, a method for manufacturing a TFT will be described with reference to FIG.

  First, the liquid repellent film F and the lyophilic portion H1 are formed on the upper surface of the cleaned glass substrate 510. When forming the lyophilic portion H1, as described above, the lyophilic material or ink containing the lyophilic material is discharged and disposed by the droplet discharge method, and is dried as necessary. . Thereafter, the functional liquid is placed on the lyophilic part H1, and a drying process is performed to form the gate scanning electrode 512.

  As the conductive fine particles at this time, Ag, Al, Au, Cu, palladium, Ni, W-si, conductive polymer, or the like can be suitably used. The gate scan electrode 512 formed in this manner is provided with sufficient liquid repellency around the lyophilic portion H1, and the functional liquid does not protrude from the lyophilic portion H1, thus forming a fine wiring pattern. It is possible to do.

Next, as shown in FIG. 10B, a gate insulating film 513, an active layer 510, and a contact layer 509 are continuously formed by plasma CVD. A silicon nitride film is formed as the gate insulating film 513, an amorphous silicon film is formed as the active layer 510, and an n ⁺ -type silicon film is formed as the contact layer 509 by changing the source gas and plasma conditions.

  In the bank formation process subsequent to the semiconductor layer formation process, as shown in FIG. 10C, a groove intersecting the groove 511a at 1/20 to 1/10 of one pixel pitch on the upper surface of the gate insulating film 513. A bank 514 for providing 514a is formed based on a photolithography method. The bank 514 needs to have optical transparency and liquid repellency after formation, and as a material thereof, an inorganic material such as polysilazane as well as a polymer material such as an acrylic resin, a polyimide resin, an olefin resin, and a melamine resin is used. Materials are preferably used.

In order to impart liquid repellency to the bank 514 after this formation, it is necessary to perform CF ₄ plasma treatment or the like (plasma treatment using a gas having a fluorine component), but instead, the material of the bank 514 itself is repelled beforehand. It is good also as what is filled with liquid components (fluorine group etc.). In this case, CF ₄ plasma treatment or the like can be omitted.

  The contact angle of the bank 514 made liquid-repellent with respect to the ejected ink is preferably 40 ° or more, and the contact angle of the glass surface is preferably 10 ° or less. That is, as a result of confirmation by the present inventors through tests, for example, the contact angle after treatment with respect to conductive fine particles (tetradecane solvent) is about 54.0 ° when the acrylic resin system is adopted as the material of the bank 514 (not yet). In the case of processing, 10 ° or less) can be secured. These contact angles were obtained under the processing conditions of supplying tetrafluoromethane gas at 0.1 L / min under a plasma power of 550 W.

  In the source / drain electrode formation step subsequent to the bank formation step, droplets containing conductive fine particles are ejected by ink jet so as to fill the groove 514a which is a drawing region partitioned by the bank 514. FIG. As shown in (d), a source electrode 515 and a drain electrode 516 intersecting with the gate scanning electrode 512 are formed. As described above, by applying the wiring pattern forming method of the present invention when forming the source electrode 515 and the drain electrode 516, it is not necessary to form a bank formed using a photolithography method.

  Note that Ag, Al, Au, Cu, palladium, Ni, W-si, a conductive polymer, and the like can be suitably used as the conductive fine particles when forming the source electrode 515 and the drain electrode 516. Since the source electrode 515 and the drain electrode 516 thus formed are provided with sufficient liquid repellency in the bank 514 in advance, a fine wiring pattern can be formed without protruding from the groove 514a. ing.

  An insulating material 517 is disposed so as to fill the groove 514a in which the source electrode 515 and the drain electrode 516 are disposed. Through the above steps, a flat upper surface 520 composed of the bank 514 and the insulating material 517 is formed on the substrate 510.

  Then, a contact hole 519 is formed in the insulating material 517, a patterned pixel electrode (ITO) 518 is formed on the upper surface 520, and the drain electrode 516 and the pixel electrode 518 are connected through the contact hole 519. TFT is formed.

FIG. 11 is a diagram showing another embodiment of the liquid crystal display device.
A liquid crystal display device (electro-optical device) 901 illustrated in FIG. 11 includes a color liquid crystal panel (electro-optical panel) 902 and a circuit board 903 connected to the liquid crystal panel 902. Further, an illumination device such as a backlight and other incidental devices are attached to the liquid crystal panel 902 as necessary.

  The liquid crystal panel 902 includes a pair of substrates 905a and 905b bonded by a sealant 904, and liquid crystal is sealed in a gap formed between the substrates 905b and 905b, a so-called cell gap. . These substrates 905a and 905b are generally formed of a light-transmitting material such as glass or synthetic resin. A polarizing plate 906a and a polarizing plate 906b are attached to the outer surfaces of the substrate 905a and the substrate 905b. In FIG. 11, the polarizing plate 906b is not shown.

  An electrode 907a is formed on the inner surface of the substrate 905a, and an electrode 907b is formed on the inner surface of the substrate 905b. These electrodes 907a and 907b are formed in stripes or letters, numbers, or other appropriate patterns. These electrodes 907a and 907b are formed of a light-transmitting material such as ITO (Indium Tin Oxide). The substrate 905a has a protruding portion that protrudes from the substrate 905b, and a plurality of terminals 908 are formed on the protruding portion. These terminals 908 are formed simultaneously with the electrode 907a when the electrode 907a is formed over the substrate 905a. Therefore, these terminals 908 are made of, for example, ITO. These terminals 908 include one that extends integrally from the electrode 907a and one that is connected to the electrode 907b via a conductive material (not shown).

  On the circuit board 903, a semiconductor element 900 as a liquid crystal driving IC is mounted at a predetermined position on the wiring board 909. Although not shown, a resistor, a capacitor, and other chip components may be mounted at predetermined positions other than the portion where the semiconductor element 900 is mounted. The wiring substrate 909 is manufactured by patterning a metal film such as Cu formed on a flexible film-like base substrate 911 such as polyimide to form a wiring pattern 912.

In this embodiment, the electrodes 907a and 907b in the liquid crystal panel 902 and the wiring pattern 912 in the circuit board 903 are formed by the wiring pattern forming method of the present invention.
Accordingly, the process time of the wiring pattern 912 on the electrodes 907a and 907b and the circuit board 903 can be shortened, and the adhesiveness of the wiring pattern 912 on the electrodes 907a and 907b and the circuit board 903 can be improved. In addition, a liquid crystal display device having excellent reliability can be obtained.

  Note that the above-described example is a passive liquid crystal panel, but an active matrix liquid crystal panel may be used. That is, a thin film transistor (TFT) is formed on one substrate, and a pixel electrode is formed for each TFT. In addition, wirings (gate wirings and source wirings) that are electrically connected to the TFTs can be formed using the inkjet technique as described above. On the other hand, a counter electrode or the like is formed on the opposing substrate. The present invention can also be applied to such an active matrix liquid crystal panel.

  In addition to the above, the electro-optical device according to the present invention emits electrons by passing a current parallel to the film surface through a PDP (plasma display panel) or a small-area thin film formed on a substrate. The present invention is also applicable to a surface conduction electron-emitting device that utilizes the phenomenon that occurs.

[Electronics]
Next, an embodiment of a non-contact card medium will be described. As shown in FIG. 12, a non-contact type card medium (electronic device) 400 according to the present embodiment includes a semiconductor integrated circuit chip 408 and an antenna circuit 412 in a housing composed of a card base 402 and a card cover 418. At least one of power supply and data transmission / reception is performed by at least one of electromagnetic waves and capacitive coupling with an external transceiver (not shown).

In the present embodiment, the antenna circuit 412 is formed by the wiring pattern forming method of the present invention.
Therefore, since the process time of the antenna circuit 412 can be shortened and the adhesion can be improved, a non-contact card medium with low cost and excellent reliability can be manufactured.

Next, specific examples of the electronic device of the present invention will be described.
FIG. 13A is a perspective view showing an example of a mobile phone. In FIG. 13A, reference numeral 600 denotes a mobile phone main body, and reference numeral 601 denotes a liquid crystal display unit including the liquid crystal display device of the above embodiment.
FIG. 13B is a perspective view illustrating an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 13B, reference numeral 700 denotes an information processing device, 701 denotes an input unit such as a keyboard, 703 denotes an information processing body, and 702 denotes a liquid crystal display unit including the liquid crystal display device of the above embodiment.
FIG. 13C is a perspective view illustrating an example of a wristwatch type electronic device. In FIG. 13C, reference numeral 800 denotes a watch body, and reference numeral 801 denotes a liquid crystal display unit including the liquid crystal display device of the above embodiment.
Since the electronic apparatus shown in FIGS. 13A to 13C includes the liquid crystal display device of the above-described embodiment, an electronic apparatus including a wiring pattern that is reduced in cost and excellent in reliability is provided. It becomes possible to do.
In addition, although the electronic device of this embodiment shall be provided with a liquid crystal display device, it can also be set as the electronic device provided with other electro-optical devices, such as an organic electroluminescent display device and a plasma type display device.

It is a schematic perspective view of a droplet discharge device. It is a figure for demonstrating the discharge principle of the liquid material by a piezo method. It is explanatory drawing for demonstrating the wiring pattern formation method which is one Embodiment of this invention. It is explanatory drawing for demonstrating the wiring pattern formation method which is one Embodiment of this invention. It is the top view which looked at the liquid crystal display device from the counter substrate side. It is sectional drawing which follows the H-H 'line | wire of FIG. It is an equivalent circuit diagram of a liquid crystal display device. It is a partial expanded sectional view of a liquid crystal display device same as the above. It is a partial expanded sectional view of an organic EL device. It is a figure for demonstrating the process of manufacturing a thin-film transistor. It is a figure which shows another form of a liquid crystal display device. It is a disassembled perspective view of a non-contact type card medium. It is a figure which shows the specific example of the electronic device of this invention.

Explanation of symbols

P: substrate, X1: functional liquid, X2: lyophilic material, H1: lyophilic part (lyophilic area), 33: wiring pattern, 100: liquid crystal display device (electro-optical device), 400 …… Contactless card media, 600 …… Mobile phone body (electronic device), 700 …… Information processing device (electronic device), 800 …… Watch body (electronic device)

Claims (14)

A wiring pattern forming method for forming a wiring pattern on a substrate having liquid repellency,
Forming a lyophilic region by discharging and placing a lyophilic material on the substrate by a droplet discharge method;
Forming a wiring pattern by disposing a functional liquid containing conductive fine particles on the lyophilic region, drying and baking the functional liquid, and forming a wiring pattern. 2. The wiring pattern forming method according to claim 1, wherein a photocatalytic material is used as the lyophilic material, and the lyophilic material is exposed after being discharged and disposed on the substrate. 2. The wiring pattern forming method according to claim 1, wherein a photocatalyst is used as the lyophilic material, and the lyophilic material is exposed before being discharged and disposed on the substrate. The photocatalytic material is a fine particle dispersion containing one or more substances selected from titanium oxide, zinc oxide, tin oxide, strontium titanate, tungsten oxide, bismuth oxide, and iron oxide. The wiring pattern forming method according to claim 1. 4. The wiring pattern forming method according to claim 2, wherein the lyophilic material is silica fine particles. The wiring pattern forming method according to claim 1, wherein the substrate having liquid repellency is provided with liquid repellency by a step of forming a liquid repellant organic thin film on the substrate. . The wiring pattern forming method according to claim 6, wherein the liquid repellent organic thin film comprises 1 to 10 layers of organic molecules. The wiring pattern forming method according to claim 7, wherein the organic molecule is a fluorine-containing silane compound or a surfactant. The wiring according to claim 1, wherein the substrate having liquid repellency is provided with liquid repellency by a plasma treatment of the surface of the substrate using a fluorocarbon compound as a reaction gas. Pattern formation method. The substrate having liquid repellency is provided with liquid repellency by a step of forming a liquid repellent film formed by applying a polymer compound containing fluorine on the substrate. 5. The wiring pattern forming method according to any one of 5 above. The wiring pattern forming method according to claim 1, wherein the functional liquid is discharged and disposed on the lyophilic material by a droplet discharge method. A wiring pattern formed by the wiring pattern forming method according to claim 1. An electro-optical device comprising the wiring pattern according to claim 12. An electronic apparatus comprising the wiring pattern according to claim 12.

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