JP2005013985A - Method for forming film pattern, device and its production method, electro-optic apparatus, and electronic component, production method of active matrix substrate, active matrix substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for precisely and stably forming a thin film pattern which is miniaturized or which uses fine lines. <P>SOLUTION: The method for forming the thin film pattern comprises: a process of forming a bank B on a substrate P; a process of arranging a function liquid L in an area partitioned by the bank B; and a process of forming the film pattern F by drying the function liquid L arranged on the substrate P. The material for forming the bank B contains an inorganic material. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a film pattern forming method, a device and a manufacturing method thereof, an electro-optical device, an electronic apparatus, an active matrix substrate manufacturing method, and an active matrix substrate.

  As a method for forming a film pattern such as a wiring used in an electronic circuit or an integrated circuit, for example, a photolithography method is used. This photolithography method requires large-scale equipment such as a vacuum apparatus and a complicated process, and the material use efficiency is about several percent, and most of it must be discarded, and the manufacturing cost is high.

On the other hand, a method of forming a film pattern on a substrate by using a droplet discharge method in which a liquid material is discharged from a liquid discharge head in a droplet shape, a so-called inkjet method has been proposed (for example, Patent Document 1, Patent Document 2). In this method, a liquid material (functional liquid) for a film pattern is directly arranged on a substrate, and then converted into a film pattern by heat treatment or laser irradiation. According to this method, there is an advantage that photolithography is not required, the process is greatly simplified, and the amount of raw materials used can be reduced.
Japanese Patent Laid-Open No. 11-274671 JP 2000-216330 A

  In recent years, the density of circuits constituting a device has been increased, and for example, further miniaturization and thinning of wiring have been required. In the film pattern forming method using the above-described droplet discharge method, the discharged droplet spreads on the substrate after landing, and thus it is difficult to stably form a fine film pattern.

  The present invention has been made in consideration of the above points, and a thin film pattern forming method, a device, and a manufacturing method thereof capable of forming a finely and thinned film pattern accurately and stably. It is an object to provide a method, an electro-optical device, an electronic apparatus, a method for manufacturing an active matrix substrate, and an active matrix substrate.

In order to achieve the above object, the present invention adopts the following configuration.
The film pattern forming method of the present invention is a method of forming a film pattern by disposing a functional liquid on a substrate, the step of forming a bank on the substrate, and the functional liquid in a region partitioned by the bank And a step of drying the functional liquid disposed on the substrate, wherein the bank forming material includes an inorganic material.
In the film pattern forming method of the present invention, the functional liquid is disposed in the area partitioned by the bank, and the functional liquid is dried to form a film pattern on the substrate. In this case, since the shape of the film pattern is defined by the bank, the film pattern can be miniaturized or thinned by appropriately forming the bank, for example, by narrowing the width between adjacent banks. .
In the film pattern forming method of the present invention, since the bank forming material contains an inorganic material, the heat resistance of the bank is high, and the difference in thermal expansion coefficient between the bank and the substrate is small. Therefore, deterioration of the bank due to heat or the like during drying of the functional liquid is suppressed, and the film pattern is formed in a good shape.
That is, in the film pattern forming method of the present invention, a film pattern that is miniaturized or thinned can be formed with high accuracy and stability.

The film pattern forming method may include a step of imparting higher liquid repellency to the bank than the substrate.
According to this forming method, since the bank repels the functional liquid, the functional liquid can be favorably disposed between the banks.

In the film pattern forming method, the functional liquid may be disposed in a region partitioned by the bank using a droplet discharge method.
According to this forming method, by using the droplet discharge method, compared with other coating techniques such as a spin coating method, the consumption of the liquid material is less, and the amount and position of the functional liquid disposed on the substrate are reduced. Easy to control.
The width between adjacent banks may be narrower than the diameter of the droplet. In this case, the droplet-like functional liquid enters between the banks by capillary action or the like. As a result, a film pattern having a line width narrower than the diameter of the droplet to be discharged is formed.

  The functional liquid contains conductive fine particles, whereby a conductive film pattern is formed. Therefore, this film pattern is applied to various devices as wiring.

  Moreover, the conductive liquid pattern also includes a conductive film pattern by including a material that exhibits conductivity by heat treatment or light treatment. Therefore, this film pattern is applied to various devices as wiring.

The device manufacturing method of the present invention is a device manufacturing method in which a film pattern is formed on a substrate, wherein the film pattern is formed on the substrate by the film pattern forming method described above.
In the device manufacturing method of the present invention, the film pattern formed on the device can be stably miniaturized and thinned. Therefore, a highly accurate device can be manufactured stably.
In particular, when the film pattern constitutes a part of a switching element such as a TFT (film transistor) provided on the substrate, a highly integrated switching element can be stably obtained.

  The device of the present invention is manufactured using the above-described device manufacturing method, and thus has high accuracy.

An electro-optical device according to the present invention includes the above-described device.
Examples of the electro-optical device include a liquid crystal display device, an organic electroluminescence display device, and a plasma display device.
According to another aspect of the invention, there is provided an electronic apparatus including the above electro-optical device.
According to these inventions, since a high-precision device is provided, quality and performance can be improved.

The active matrix substrate manufacturing method of the present invention includes a first step of forming a gate wiring on the substrate, a second step of forming a gate insulating film on the gate wiring, and a semiconductor through the gate insulating film. A third step of stacking layers; a fourth step of forming a source electrode and a drain electrode on the gate insulating layer; a fifth step of disposing an insulating material on the source electrode and the drain electrode; Forming a pixel electrode that is electrically connected to the drain electrode, and at least one of the first step, the fourth step, and the sixth step is described above. The film pattern forming method is used.
The active matrix substrate of the present invention is manufactured using the above-described method for manufacturing an active matrix substrate.

  According to the present invention, droplets can be smoothly arranged between banks and a film pattern having a desired pattern shape can be formed, so that an active matrix substrate having desired performance can be manufactured.

The present invention will be described below with reference to the drawings.
FIG. 1 is a diagram conceptually showing the film pattern forming method of the present invention.
The film pattern forming method of the present invention includes a bank forming process for forming a bank B on a substrate P, a material arranging process for arranging a functional liquid L in a region partitioned by the bank B, and a functional liquid arranged on the substrate P. It has a drying (firing) step for drying L.

  In the film pattern forming method of the present invention, the functional liquid L is disposed in an area partitioned by the bank B, and the functional liquid L is dried, whereby the film pattern F is formed on the substrate P. In this case, since the shape of the film pattern F is defined by the bank B, the film pattern F can be made finer by appropriately forming the bank B, for example, by narrowing the width between the adjacent banks B and B. Thinning is achieved. Note that after the film pattern F is formed, the bank B may be removed from the substrate P or may be left on the substrate P as it is.

  In the film pattern forming method of the present invention, an inorganic material is used as the bank B forming material. As a method of forming the bank B with an inorganic material, for example, after forming a layer made of an inorganic material on the substrate P using various coating methods, CVD methods (chemical vapor deposition methods), etc., etching, A bank B having a predetermined shape can be obtained by patterning by ashing or the like. Moreover, the bank B according to a thin film pattern can be formed by a lithographic method using a photosensitive inorganic material. Note that the bank B may be formed on an object different from the substrate P and disposed on the substrate P.

  Inorganic bank materials include, for example, polysilazanes, polysiloxanes, siloxane resists, polysilane inorganic resists such as high molecular inorganic materials and photosensitive inorganic materials, silica glass, alkylsiloxane polymers, and alkylsilsesquioxanes. Examples thereof include spin-on-glass films, diamond films, and fluorinated amorphous carbon films containing any of polymers, hydrogenated alkylsilsesquioxane polymers, and polyaryl ethers.

  Furthermore, as an inorganic bank material, for example, airgel, porous silica, or the like may be used.

  Examples of the substrate P include various types such as glass, quartz glass, Si wafer, plastic film, and metal plate. Further, it includes those in which a semiconductor film, a metal film, a dielectric film, an organic film or the like is formed as a base layer on the surface of these various material substrates.

  In the film pattern forming method of the present invention, the bank B forming material contains an inorganic material, whereby the heat resistance of the bank B is increased, and the difference in thermal expansion coefficient between the bank B and the substrate P is reduced. . Therefore, the deterioration of the bank B due to heat or the like when the functional liquid is dried is suppressed, and the film pattern F is formed in a good shape.

  For example, when the functional liquid L is fired by previously applying a low melting point glass or the like on the bank B and the functional liquid, the firing temperature may be as high as 300 ° C. or higher. Even in such a case, sufficient durability can be obtained because the bank B is formed of an inorganic material.

Note that as a material for forming the bank B, in addition to an inorganic material, a metal material or an organic material may be included. Since at least the bank B formed on the substrate P has an inorganic skeleton, the above-described improvement in the thermal characteristics of the bank B can be obtained.
Further, the bank B may be formed in a multilayer shape, and at least one layer may be formed from an inorganic material.

Here, various types of functional liquid L are used as the functional liquid L in the present invention. For example, wiring pattern ink containing conductive fine particles is used.
Further, as a method of disposing the functional liquid L in the region partitioned by the bank B, it is preferable to use a droplet discharge method, a so-called ink jet method. Compared to other coating technologies such as spin coating, the use of the droplet discharge method has the advantage that less liquid material is consumed and the amount and position of the functional liquid placed on the substrate can be easily controlled. is there.

The wiring pattern ink is made of a dispersion liquid in which conductive fine particles are dispersed in a dispersion medium.
Examples of the conductive fine particles include metal fine particles containing any one of gold, silver, copper, palladium, and nickel, oxides thereof, and fine particles of conductive polymers and superconductors.
These conductive fine particles can be used by coating the surface with an organic substance or the like in order to improve dispersibility. Examples of the coating material that coats the surface of the conductive fine particles include organic solvents such as xylene and toluene, citric acid, and the like.
The particle diameter of the conductive fine particles is preferably 1 nm or more and 0.1 μm or less. If it is larger than 0.1 μm, there is a possibility that clogging may occur in the nozzle of the liquid discharge head described later. On the other hand, if it is smaller than 1 nm, the volume ratio of the coating agent to the conductive fine particles becomes large, and the ratio of organic substances in the obtained film becomes excessive.

  The dispersion medium is not particularly limited as long as it can disperse the conductive fine particles and does not cause aggregation. For example, in addition to water, alcohols such as methanol, ethanol, propanol, butanol, n-heptane, n-octane, decane, dodecane, tetradecane, toluene, xylene, cymene, durene, indene, dipentene, tetrahydronaphthalene, decahydro Hydrocarbon compounds such as naphthalene and cyclohexylbenzene, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol methyl ethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, 1,2-dimethoxyethane, bis (2- Methoxyethyl) ether, ether compounds such as p-dioxane, propylene carbonate, γ- Butyrolactone, N- methyl-2-pyrrolidone, dimethylformamide, dimethyl sulfoxide, can be exemplified polar compounds such as cyclohexanone. Of these, water, alcohols, hydrocarbon compounds, and ether compounds are preferred from the viewpoints of fine particle dispersibility and dispersion stability, and ease of application to the droplet discharge method (inkjet method). More preferred dispersion media include water and hydrocarbon compounds.

  The surface tension of the conductive fine particle dispersion is preferably in the range of 0.02 N / m to 0.07 N / m. When the liquid is discharged by the droplet discharge method, if the surface tension is less than 0.02 N / m, the wettability of the ink composition with respect to the nozzle surface increases, and thus flight bending easily occurs, resulting in 0.07 N / m. If it exceeds the upper limit, the shape of the meniscus at the nozzle tip is unstable, and it becomes difficult to control the discharge amount and the discharge timing. In order to adjust the surface tension, a small amount of a surface tension regulator such as a fluorine-based, silicone-based, or nonionic-based material may be added to the dispersion within a range that does not significantly reduce the contact angle with the substrate. The nonionic surface tension modifier improves the wettability of the liquid to the substrate, improves the leveling property of the film, and helps prevent the occurrence of fine irregularities in the film. The surface tension modifier may contain an organic compound such as alcohol, ether, ester, or ketone, if necessary.

  The viscosity of the dispersion is preferably 1 mPa · s to 50 mPa · s. When the liquid material is ejected as droplets using the droplet ejection method, if the viscosity is less than 1 mPa · s, the nozzle periphery is easily contaminated by the outflow of ink, and if the viscosity is greater than 50 mPa · s, The frequency of clogging in the nozzle holes increases, and it becomes difficult to smoothly discharge droplets.

Examples of the discharge technique of the droplet discharge method include a charge control method, a pressure vibration method, an electromechanical conversion method, an electrothermal conversion method, and an electrostatic suction method. In the charge control method, a charge is applied to a material by a charging electrode, and the flight direction of the material is controlled by a deflection electrode and discharged from a nozzle. In addition, the pressurized vibration method is a method in which an ultra-high pressure of about 30 kg / cm ² is applied to the material and the material is discharged to the nozzle tip side. When no control voltage is applied, the material goes straight and is discharged from the nozzle. When a control voltage is applied, electrostatic repulsion occurs between the materials, and the materials are scattered and are not discharged from the nozzle. The electromechanical conversion method utilizes the property that a piezoelectric element (piezoelectric element) is deformed by receiving a pulse-like electric signal. The piezoelectric element is deformed through a flexible substance in a space where material is stored. Pressure is applied, and the material is extruded from this space and discharged from the nozzle.

  In the electrothermal conversion method, a material is rapidly vaporized by a heater provided in a space in which the material is stored to generate bubbles, and the material in the space is discharged by the pressure of the bubbles. In the electrostatic attraction method, a minute pressure is applied in a space in which the material is stored, a meniscus of the material is formed on the nozzle, and an electrostatic attractive force is applied in this state before the material is drawn out. In addition to this, techniques such as a system that uses a change in the viscosity of a fluid due to an electric field and a system that uses a discharge spark are also applicable. The droplet discharge method has an advantage that the use of the material is less wasteful and a desired amount of the material can be accurately disposed at a desired position. The amount of one drop of the liquid material (fluid) discharged by the droplet discharge method is, for example, 1 to 300 nanograms.

  In the film pattern forming method of the present invention, a conductive film pattern can be formed by using the wiring pattern ink described above. This conductive film pattern is applied to various devices as wiring.

  FIG. 2 is a perspective view showing a schematic configuration of a droplet discharge device (inkjet device) IJ that arranges a liquid material on a substrate by a droplet discharge method as an example of an apparatus used in the film pattern forming method of the present invention. .

The droplet discharge device IJ includes a droplet discharge head 1, an X-axis direction drive shaft 4, a Y-axis direction guide shaft 5, a control device CONT, a stage 7, a cleaning mechanism 8, a base 9, and a heater. 15.
The stage 7 supports the substrate P on which ink (liquid material) is provided by the droplet discharge device IJ, and includes a fixing mechanism (not shown) that fixes the substrate P at a reference position.

  The droplet discharge head 1 is a multi-nozzle type droplet discharge head including a plurality of discharge nozzles, and the longitudinal direction and the Y-axis direction are made to coincide. The plurality of ejection nozzles are provided on the lower surface of the droplet ejection head 1 at regular intervals along the Y-axis direction. From the ejection nozzle of the droplet ejection head 1, the ink containing the conductive fine particles described above is ejected onto the substrate P supported by the stage 7.

An X-axis direction drive motor 2 is connected to the X-axis direction drive shaft 4. The X-axis direction drive motor 2 is a stepping motor or the like, and rotates the X-axis direction drive shaft 4 when a drive signal in the X-axis direction is supplied from the control device CONT. When the X-axis direction drive shaft 4 rotates, the droplet discharge head 1 moves in the X-axis direction.
The Y-axis direction guide shaft 5 is fixed so as not to move with respect to the base 9. The stage 7 includes a Y-axis direction drive motor 3. The Y-axis direction drive motor 3 is a stepping motor or the like, and moves the stage 7 in the Y-axis direction when a drive signal in the Y-axis direction is supplied from the control device CONT.

The control device CONT supplies the droplet discharge head 1 with a voltage for controlling droplet discharge. In addition, a drive pulse signal for controlling movement of the droplet discharge head 1 in the X-axis direction is supplied to the X-axis direction drive motor 2, and a drive pulse signal for controlling movement of the stage 7 in the Y-axis direction is supplied to the Y-axis direction drive motor 3. Supply.
The cleaning mechanism 8 cleans the droplet discharge head 1. The cleaning mechanism 8 is provided with a Y-axis direction drive motor (not shown). The cleaning mechanism 8 moves along the Y-axis direction guide shaft 5 by driving the Y-axis direction drive motor. The movement of the cleaning mechanism 8 is also controlled by the control device CONT.
Here, the heater 15 is a means for heat-treating the substrate P by lamp annealing, and performs evaporation and drying of the solvent contained in the liquid material applied on the substrate P. The heater 15 is also turned on and off by the control device CONT.

  The droplet discharge device IJ discharges droplets onto the substrate P while relatively scanning the droplet discharge head 1 and the stage 7 that supports the substrate P. Here, in the following description, the X-axis direction is a scanning direction, and the Y-axis direction orthogonal to the X-axis direction is a non-scanning direction. Therefore, the discharge nozzles of the droplet discharge head 1 are provided at regular intervals in the Y-axis direction, which is the non-scanning direction. In FIG. 2, the droplet discharge head 1 is arranged at a right angle to the traveling direction of the substrate P, but the angle of the droplet discharging head 1 is adjusted so as to intersect the traveling direction of the substrate P. It may be. In this way, the pitch between the nozzles can be adjusted by adjusting the angle of the droplet discharge head 1. Further, the distance between the substrate P and the nozzle surface may be arbitrarily adjusted.

FIG. 3 is a view for explaining the discharge principle of the liquid material by the piezo method.
In FIG. 3, a piezo element 22 is installed adjacent to a liquid chamber 21 for storing a liquid material (ink for wiring pattern, functional liquid). The liquid material is supplied to the liquid chamber 21 via a liquid material supply system 23 including a material tank that stores the liquid material.
The piezo element 22 is connected to a drive circuit 24, and a voltage is applied to the piezo element 22 via the drive circuit 24 to deform the piezo element 22, whereby the liquid chamber 21 is deformed and the liquid material is discharged from the nozzle 25. Is discharged. In this case, the amount of distortion of the piezo element 22 is controlled by changing the value of the applied voltage. Further, the strain rate of the piezo element 22 is controlled by changing the frequency of the applied voltage.
Since the droplet discharge by the piezo method does not apply heat to the material, it has an advantage of hardly affecting the composition of the material.

Next, as an example of an embodiment of the film pattern forming method of the present invention, a method for forming a conductive film wiring on a substrate will be described in detail with reference to FIG.
In the film pattern forming method according to the present embodiment, the above-described wiring pattern ink (wiring pattern forming material) is disposed on a substrate, and a conductive film pattern for wiring is formed on the substrate. It is roughly composed of a process, a residue treatment process, a liquid repellency treatment process, a material placement process, an intermediate drying process, and a firing process.
Hereinafter, each process will be described in detail.

(Bank formation process)
The bank is a member that functions as a partition member, and the bank can be formed by an arbitrary method such as a lithography method or a printing method. For example, when a photosensitive inorganic material is used as a partition member by a lithography method, the substrate P is formed by a predetermined method such as spin coating, spray coating, roll coating, die coating, dip coating, as shown in FIG. A bank forming material 31 is applied on the top in accordance with the height of the bank. Then, by exposing and developing the resist through a mask corresponding to the wiring pattern, a desired bank pattern is obtained around the area where the wiring is to be formed.

  As the bank material, a material containing an inorganic material is used. In this example, for example, silicon, that is, a material mainly composed of silica is used.

  As a result, as shown in FIG. 4B, banks B and B with a width of, for example, 10 to 15 μm are provided so as to surround the periphery of the region where the wiring pattern is to be formed.

(Residue treatment process (lyophilic treatment process))
Next, in order to remove a resist (organic matter) residue at the time of bank formation between banks, the substrate P is subjected to a residue treatment.
As the residue treatment, an ultraviolet (UV) irradiation treatment for performing a residue treatment by irradiating ultraviolet rays, an O ₂ plasma treatment using oxygen as a treatment gas in the air atmosphere, or the like can be selected. Here, the O ₂ plasma treatment is performed. To do.

Specifically, the substrate P is irradiated with oxygen in a plasma state from a plasma discharge electrode. As conditions for the O ₂ plasma treatment, for example, the plasma power is 50 to 1000 W, the oxygen gas flow rate is 50 to 100 ml / min, the plate conveyance speed of the substrate P with respect to the plasma discharge electrode is 0.5 to 10 mm / sec, and the substrate temperature is 70. ˜90 ° C.
When the substrate P is a glass substrate, its surface is lyophilic with respect to the wiring pattern forming material. However, as in the present embodiment, O ₂ plasma treatment or ultraviolet irradiation treatment is used for residue treatment. The lyophilicity of the substrate surface can be increased by applying

(Liquid repellency treatment process)
Subsequently, the bank B is subjected to a liquid repellency treatment to impart liquid repellency to the surface thereof.
As the lyophobic treatment, for example, a plasma treatment method (CF ₄ plasma treatment method) using tetrafluoromethane as a treatment gas in an air atmosphere can be employed. The conditions of the CF ₄ plasma treatment are, for example, a plasma power of 50 to 1000 W, a tetrafluoromethane gas flow rate of 50 to 100 ml / min, a substrate transport speed to the plasma discharge electrode of 0.5 to 1020 mm / sec, and a substrate temperature of 70 to 90. ℃.
The processing gas is not limited to tetrafluoromethane (carbon tetrafluoride), and other fluorocarbon gases can also be used.

By performing such a liquid repellency treatment, for example, in the banks B and B when a photosensitive inorganic material is employed, a fluorine group is introduced into the resin constituting the bank B and B, and high liquid repellency is imparted. Incidentally, the O ₂ plasma treatment as lyophilic process described above may be performed before formation of the bank B, but if pretreatment with O ₂ plasma is made, that the bank B is easily fluorinated (liquid repellent) Because of the nature, it is preferable to perform O ₂ plasma treatment after the bank B is formed.
Although the lyophobic treatment for banks B and B has some influence on the surface of the substrate P previously lyophilicized, the introduction of fluorine groups by the lyophobic treatment is particularly effective when the substrate P is made of glass or the like. Therefore, the lyophilicity, that is, the wettability of the substrate P is not substantially impaired.
Further, the banks B and B may be formed of a material having liquid repellency (for example, a resin material having a fluorine group), so that the liquid repellency treatment may be omitted.

(Material placement process and intermediate drying process)
Next, using the droplet discharge method by the droplet discharge device IJ shown in FIG. 2, the wiring pattern forming material is divided into the regions partitioned by the banks B and B on the substrate P, that is, between the banks B and B. To place. In this example, as the wiring pattern ink (functional liquid), a dispersion liquid in which conductive fine particles are dispersed in a solvent (dispersion medium) is discharged. The conductive fine particles used here include fine particles of conductive polymer or superconductor in addition to metal fine particles containing any of gold, silver, copper, palladium, and nickel.

  That is, in the material arrangement step, as shown in FIG. 4C, the liquid material L including the wiring pattern forming material is discharged from the liquid discharge head 1 as droplets, and the droplets are ejected into banks B, Place between B. As the droplet discharge conditions, for example, the ink weight is 4 to 7 ng / dot and the ink speed (discharge speed) is 5 to 7 m / sec.

At this time, since the arrangement area of the liquid material is partitioned by the banks B and B, the liquid material L is prevented from spreading on the substrate P.
Further, as shown in FIG. 4C, when the width W between adjacent banks B and B is narrower than the diameter D of the droplet (that is, the diameter D of the droplet is larger than the width W between the banks B and B). In this case, as shown by a two-dot chain line in FIG. 4D, although a part of the liquid droplets is on the banks B and B, the liquid material L enters between the banks B and B due to capillary action or the like. In this example, since the banks B and B have liquid repellency, the liquid material is repelled by the bank B and flows more reliably between the banks B and B.
Further, since the surface of the substrate P is given lyophilicity, the liquid material L that has flowed between the banks B and B spreads uniformly in the partitioned area. As a result, a coating film having a line width W narrower than the diameter D of the droplet to be discharged is formed.

(Intermediate drying process)
After disposing the liquid material on the substrate P, a drying process is performed as necessary to remove the dispersion medium and secure the film thickness. The drying process can be performed by lamp annealing, for example, in addition to a process using a normal hot plate or an electric furnace for heating the substrate P.
The light source used for lamp annealing is not particularly limited, but excimer laser such as infrared lamp, xenon lamp, YAG laser, argon laser, carbon dioxide laser, XeF, XeCl, XeBr, KrF, KrCl, ArF, ArCl, etc. Can be used as a light source. In general, these light sources have an output in the range of 10 W to 5000 W, but in the present embodiment, a range of 100 W to 1000 W is sufficient.

(Baking process)
The dried film after the discharging process needs to completely remove the dispersion medium in order to improve the electrical contact between the fine particles. Further, when a coating material such as an organic material is coated on the surface of the conductive fine particles in order to improve dispersibility, it is also necessary to remove this coating material. For this reason, the substrate after the discharge process is subjected to heat treatment and / or light treatment.

The heat treatment and / or light treatment is usually performed in the air, but may be performed in an inert gas atmosphere such as nitrogen, argon, helium, etc., if necessary. The treatment temperature of heat treatment and / or light treatment depends on the boiling point (vapor pressure) of the dispersion medium, the type and pressure of the atmospheric gas, the thermal behavior such as fine particle dispersibility and oxidation, the presence and amount of coating material, It is determined appropriately in consideration of the heat resistant temperature.
For example, in order to remove the coating material made of organic matter, it is necessary to bake at about 300 ° C. In this case, for example, low melting point glass or the like may be applied in advance on the bank B and the dry film of the liquid material.
Through the above steps, the dry film after the discharge process ensures electrical contact between the fine particles and is converted into a conductive film (film pattern F) as shown in FIG.

  In the present embodiment, since the bank B is formed using an inorganic material, the heat resistance of the bank B is high, and the difference in coefficient of thermal expansion between the bank B and the substrate P is small. Therefore, even in the high temperature treatment during firing, the deterioration of the bank B is suppressed, and the film pattern F is formed in a good shape.

Next, a liquid crystal display device which is an example of the electro-optical device of the invention will be described.
FIG. 5 is a plan view of the liquid crystal display device according to the present invention as seen from the counter substrate side shown together with each component, and FIG. 6 is a cross-sectional view taken along the line HH ′ of FIG. FIG. 7 is an equivalent circuit diagram of various elements and wirings in a plurality of pixels formed in a matrix in the image display region of the liquid crystal display device, and FIG. 8 is a partial enlarged cross-sectional view of the liquid crystal display device. In each drawing used in the following description, the scale is different for each layer and each member so that each layer and each member can be recognized on the drawing.

  5 and 6, the liquid crystal display device (electro-optical device) 100 according to the present embodiment is bonded to a pair of TFT array substrate 10 and counter substrate 20 by a sealing material 52 which is a photocurable sealing material. The liquid crystal 50 is sealed and held in the region partitioned by the sealing material 52. The sealing material 52 is formed in a frame shape that is closed in a region within the substrate surface, does not include a liquid crystal injection port, and does not have a trace sealed with the sealing material.

  A peripheral parting 53 made of a light shielding material is formed in a region inside the region where the sealing material 52 is formed. A data line driving circuit 201 and a mounting terminal 202 are formed along one side of the TFT array substrate 10 in a region outside the sealing material 52, and the scanning line driving circuit 204 is formed along two sides adjacent to the one side. Is formed. On the remaining side of the TFT array substrate 10, a plurality of wirings 205 are provided for connecting between the scanning line driving circuits 204 provided on both sides of the image display area. Further, at least one corner of the counter substrate 20 is provided with an inter-substrate conductive material 206 for establishing electrical continuity between the TFT array substrate 10 and the counter substrate 20.

Instead of forming the data line driving circuit 201 and the scanning line driving circuit 204 on the TFT array substrate 10, for example, a TAB (Tape Automated Bonding) substrate on which a driving LSI is mounted and a peripheral portion of the TFT array substrate 10 The terminal group formed in the above may be electrically and mechanically connected via an anisotropic conductive film. In the liquid crystal display device 100, depending on the type of liquid crystal 50 to be used, that is, depending on the operation mode such as TN (Twisted Nematic) mode, STN (Super Twisted Nematic) mode, or normally white mode / normally black mode. A retardation plate, a polarizing plate, and the like are arranged in a predetermined direction, but the illustration is omitted here.
Further, when the liquid crystal display device 100 is configured for color display, in the counter substrate 20, for example, red (R), green (G), A blue (B) color filter is formed together with the protective film.

  In the image display region of the liquid crystal display device 100 having such a structure, as shown in FIG. 7, a plurality of pixels 100a are configured in a matrix, and each of these pixels 100a has a pixel switching region. TFT (switching element) 30 is formed, and a data line 6 a for supplying pixel signals S 1, S 2,..., Sn is electrically connected to the source of the TFT 30. Pixel signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. . Further, the scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2,..., Gm are applied to the scanning line 3a in a pulse-sequential manner in this order at a predetermined timing. It is configured.

  The pixel electrode 19 is electrically connected to the drain of the TFT 30, and the pixel signal S1, S2,..., Sn supplied from the data line 6a is obtained by turning on the TFT 30 as a switching element for a certain period. Write to each pixel at a predetermined timing. The pixel signals S1, S2,..., Sn written in the liquid crystal via the pixel electrode 19 in this way are held for a certain period with the counter electrode 121 of the counter substrate 20 shown in FIG. In order to prevent the held pixel signals S1, S2,..., Sn from leaking, a storage capacitor 60 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 19 and the counter electrode 121. For example, the voltage of the pixel electrode 19 is held by the storage capacitor 60 for a time that is three orders of magnitude longer than the time when the source voltage is applied. Thereby, the charge retention characteristics are improved, and the liquid crystal display device 100 with a high contrast ratio can be realized.

  FIG. 8 is a partial enlarged cross-sectional view of the liquid crystal display device 100 having the bottom gate type TFT 30. The gate wiring 61 as a conductive film is formed on the glass substrate P constituting the TFT array substrate 10 by the above film pattern forming method. Is formed.

  A semiconductor layer 63 made of an amorphous silicon (a-Si) layer is stacked on the gate wiring 61 with a gate insulating film 62 made of SiNx interposed therebetween. A portion of the semiconductor layer 63 facing the gate wiring portion is a channel region. On the semiconductor layer 63, junction layers 64a and 64b made of, for example, an n + -type a-Si layer for obtaining an ohmic junction are stacked, and the channel is protected on the semiconductor layer 63 in the central portion of the channel region. An insulating etch stop film 65 made of SiNx is formed. The gate insulating film 62, the semiconductor layer 63, and the etch stop film 65 are patterned as shown in the figure by performing resist coating, photosensitive / developing, and photoetching after vapor deposition (CVD).

  Further, the bonding electrodes 64a and 64b and the pixel electrode 19 made of ITO are formed in the same manner, and are patterned as shown in the figure by performing photoetching. Banks 66 are provided on the pixel electrode 19, the gate insulating film 62, and the etch stop film 65, and silver droplets are discharged between the banks 66 using the above-described droplet discharge device IJ. Thus, a source line and a drain line can be formed.

  In the liquid crystal display device according to the present embodiment, the conductive film which is miniaturized and thinned by the above-described film pattern forming method is formed with high accuracy and stability, so that high quality and performance can be obtained.

  In the above-described embodiment, the gate wiring of the TFT (Thin Film Transistor) is formed by using the film pattern forming method according to the present invention. However, other components such as a source electrode, a drain electrode, and a pixel electrode are formed. It is also possible to manufacture. Hereinafter, a method for manufacturing a TFT will be described with reference to FIGS.

  As shown in FIG. 9, first, a first-layer bank 611 for providing a groove 611a having a pitch of 1/20 to 1/10 of one pixel pitch on the upper surface of a cleaned glass substrate 610 is based on a photolithography method. Formed. The bank 611 needs to have light transmittance and liquid repellency after formation, and a polymer material such as an acrylic resin, a polyimide resin, an olefin resin, or a melamine resin is preferably used as the material.

In order to impart liquid repellency to the bank 611 after this formation, it is necessary to perform CF ₄ plasma treatment or the like (plasma treatment using a gas having a fluorine component). A liquid repellent component (fluorine group or the like) may be filled. In this case, CF ₄ plasma treatment or the like can be omitted.

  The contact angle of the bank 611 made liquid-repellent as described above with respect to the ejected ink is preferably 40 ° or more, and the contact angle of the glass surface is preferably 10 ° or less. That is, as a result of confirmation by the inventors through tests, for example, the contact angle after the treatment with respect to the conductive fine particles (tetradecane solvent) is about 54.0 ° when the acrylic resin system is adopted as the material of the bank 611 (not yet In the case of processing, 10 ° or less) can be secured. These contact angles were obtained under the processing conditions of supplying tetrafluoromethane gas at 0.1 L / min under a plasma power of 550 W.

  In the gate scanning electrode formation step (first conductive pattern formation step) subsequent to the first layer bank formation step, the conductive layer is formed so as to fill the groove 611a which is a drawing region partitioned by the bank 611. A gate scan electrode 612 is formed by discharging a droplet containing a material by inkjet. Then, when forming the gate scanning electrode 612, the pattern forming method according to the present invention is applied.

  As the conductive material at this time, Ag, Al, Au, Cu, palladium, Ni, W-si, a conductive polymer, or the like can be suitably used. Since the gate scan electrode 612 formed in this manner is given sufficient liquid repellency to the bank 611 in advance, it is possible to form a fine wiring pattern without protruding from the groove 611a.

  Through the above steps, the first conductive layer A1 having a flat upper surface including the bank 611 and the gate scanning electrode 612 is formed on the substrate 610.

  In order to obtain a good discharge result in the groove 611a, as shown in FIG. 9, it is preferable to adopt a quasi-taper (taper shape opening toward the discharge source) as the shape of the groove 611a. As a result, the discharged droplets can be made to enter sufficiently deeply.

  Next, as shown in FIG. 10, a gate insulating film 613, an active layer 610, and a contact layer 609 are continuously formed by plasma CVD. A silicon nitride film is formed as the gate insulating film 613, an amorphous silicon film is formed as the active layer 610, and an n + silicon film is formed as the contact layer 609 by changing the source gas and plasma conditions. When the film is formed by the CVD method, a heat history of 300 ° C. to 350 ° C. is required. However, problems related to transparency and heat resistance can be avoided by using an inorganic material for the bank.

  In the second bank forming step subsequent to the semiconductor layer forming step, as shown in FIG. 11, the upper surface of the gate insulating film 613 is 1/20 to 1/10 of one pixel pitch and intersects the groove 611a. A second-layer bank 614 for providing the groove 614a to be formed is formed based on a photolithography method. The bank 614 needs to have optical transparency and liquid repellency after formation, and a polymer material such as an acrylic resin, a polyimide resin, an olefin resin, or a melamine resin is preferably used as the material.

In order to impart liquid repellency to the formed bank 614, it is necessary to perform CF ₄ plasma treatment or the like (plasma treatment using a gas having a fluorine component). Instead, the material of the bank 614 itself is repelled beforehand. It is good also as what is filled with liquid components (fluorine group etc.). In this case, CF ₄ plasma treatment or the like can be omitted.

  The contact angle of the bank 614 made liquid-repellent as described above with respect to the ejected ink is preferably 40 ° or more.

  In the source / drain electrode formation step (second conductive pattern formation step) subsequent to the second layer bank formation step, the conductive layer is formed so as to fill the groove 614a which is a drawing region partitioned by the bank 614. By discharging droplets containing a conductive material by inkjet, a source electrode 615 and a source electrode 616 intersecting the gate scan electrode 612 are formed as shown in FIG. Then, when forming the source electrode 615 and the drain electrode 616, the pattern forming method according to the present invention is applied.

  As the conductive material at this time, Ag, Al, Au, Cu, palladium, Ni, W-si, a conductive polymer, or the like can be suitably used. Since the source electrode 615 and the drain electrode 616 thus formed are provided with sufficient liquid repellency in the bank 614 in advance, a fine wiring pattern can be formed without protruding from the groove 614a. ing.

  In addition, an insulating material 617 is disposed so as to fill the groove 614a in which the source electrode 615 and the drain electrode 616 are disposed. Through the above steps, a flat upper surface 620 including the bank 614 and the insulating material 617 is formed on the substrate 610.

  Then, a contact hole 619 is formed in the insulating material 617, a patterned pixel electrode (ITO) 618 is formed on the upper surface 620, and the drain electrode 616 and the pixel electrode 618 are connected through the contact hole 619. TFT is formed.

  In the above embodiment, the TFT 30 is used as a switching element for driving the liquid crystal display device 100. However, the present invention can be applied to, for example, an organic EL (electroluminescence) display device in addition to the liquid crystal display device. An organic EL display device has a structure in which a thin film containing fluorescent inorganic and organic compounds is sandwiched between a cathode and an anode, and excitons are obtained by injecting electrons and holes into the thin film to excite them. It is an element that generates (exciton) and emits light by utilizing light emission (fluorescence / phosphorescence) when the exciton is recombined. Then, on the substrate having the TFT 30 described above, among the fluorescent materials used for the organic EL display element, a material exhibiting each emission color of red, green and blue, that is, a light emitting layer forming material and a hole injection / electron transport layer are provided. A self-luminous full-color EL device can be manufactured by using ink as a material to be formed and patterning each. The range of the device (electro-optical device) in the present invention includes such an organic EL device.

FIG. 13 is a side sectional view of an organic EL device in which some components are manufactured by the droplet discharge device IJ. The schematic configuration of the organic EL device will be described with reference to FIG.
In FIG. 13, an organic EL device 401 includes an organic EL element 402 including a substrate 411, a circuit element portion 421, a pixel electrode 431, a bank portion 441, a light emitting element 451, a cathode 461 (counter electrode), and a sealing substrate 471. In addition, wiring of a flexible substrate (not shown) and a driving IC (not shown) are connected. The circuit element portion 421 is configured by forming TFTs 60 as active elements on a substrate 411 and arranging a plurality of pixel electrodes 431 on the circuit element portion 421. And the gate wiring 61 which comprises TFT30 is formed with the formation method of the wiring pattern of embodiment mentioned above.

  Bank portions 441 are formed in a lattice shape between the pixel electrodes 431, and light emitting elements 451 are formed in the recess openings 444 generated by the bank portions 441. Note that the light emitting element 451 includes an element that emits red light, an element that emits green light, and an element that emits blue light. Accordingly, the organic EL device 401 realizes full color display. Yes. The cathode 461 is formed on the entire upper surface of the bank portion 441 and the light emitting element 451, and a sealing substrate 471 is laminated on the cathode 461.

  The manufacturing process of the organic EL device 401 including the organic EL element includes a bank part forming step for forming the bank part 441, a plasma processing step for appropriately forming the light emitting element 451, and a light emitting element formation for forming the light emitting element 451. A process, a counter electrode forming process for forming the cathode 461, and a sealing process for stacking and sealing the sealing substrate 471 on the cathode 461.

  The light emitting element forming step is to form the light emitting element 451 by forming the hole injection layer 452 and the light emitting layer 453 on the concave opening 444, that is, the pixel electrode 431. The hole injection layer forming step and the light emitting layer forming step It is equipped with. In the hole injection layer forming step, a liquid material for forming the hole injection layer 452 is discharged onto each pixel electrode 431, and the discharged liquid material is dried to form holes. A first drying step for forming the injection layer 452. The light emitting layer forming step includes a second discharge step of discharging a liquid material for forming the light emitting layer 453 onto the hole injection layer 452, and drying the discharged liquid material to form the light emitting layer 453. And a second drying step to be formed. As described above, the light emitting layer 453 is formed of three types of materials corresponding to the three colors of red, green, and blue. Therefore, the second discharge process includes three types of light emitting layers. There are three steps for discharging the material to each.

  In the light emitting element forming step, the droplet discharge device IJ can be used in the first discharging step in the hole injection layer forming step and the second discharging step in the light emitting layer forming step.

  Moreover, as a device (electro-optical device) according to the present invention, in addition to the above, a current is passed in parallel to the film surface through a PDP (plasma display panel) or a small-area thin film formed on a substrate, The present invention can also be applied to a surface conduction electron-emitting device that utilizes a phenomenon in which electron emission occurs.

Next, an example in which the film pattern formed by the film pattern forming method of the present invention is applied to a plasma display device will be described.
FIG. 14 is an exploded perspective view of the plasma display device 500 of this embodiment.
The plasma display device 500 includes substrates 501 and 502 disposed opposite to each other, and a discharge display unit 510 formed therebetween.
The discharge display unit 510 is a collection of a plurality of discharge chambers 516. Among the plurality of discharge chambers 516, the three discharge chambers 516 of the red discharge chamber 516 (R), the green discharge chamber 516 (G), and the blue discharge chamber 516 (B) are arranged so as to form one pixel. Has been.

Address electrodes 511 are formed in stripes at predetermined intervals on the upper surface of the substrate 501, and a dielectric layer 519 is formed so as to cover the address electrodes 511 and the upper surface of the substrate 501. A partition wall 515 is formed on the dielectric layer 519 so as to be positioned between the address electrodes 511 and 511 and along the address electrodes 511. The barrier ribs 515 include barrier ribs adjacent to the left and right sides of the address electrode 511 in the width direction, and barrier ribs extending in a direction orthogonal to the address electrodes 511. A discharge chamber 516 is formed corresponding to a rectangular region partitioned by the partition 515.
In addition, a phosphor 517 is disposed inside a rectangular region defined by the partition 515. The phosphor 517 emits red, green, or blue fluorescence. The red phosphor 517 (R) is located at the bottom of the red discharge chamber 516 (R), and the bottom of the green discharge chamber 516 (G). Are arranged with a green phosphor 517 (G) and a blue phosphor 517 (B) at the bottom of the blue discharge chamber 516 (B).

On the other hand, a plurality of display electrodes 512 are formed in stripes at predetermined intervals on the substrate 502 in a direction orthogonal to the previous address electrodes 511. Further, a dielectric layer 513 and a protective film 514 made of MgO or the like are formed so as to cover them.
The substrate 501 and the substrate 502 are bonded to each other with the address electrodes 511... And the display electrodes 512.
The address electrode 511 and the display electrode 512 are connected to an AC power supply (not shown). By energizing each electrode, the phosphor 517 emits light in the discharge display portion 510, and color display is possible.

  In the present embodiment, since the address electrode 511 and the display electrode 512 are each formed based on the above-described wiring pattern forming method, the size and thickness can be reduced, and high-quality that does not cause defects such as disconnection occurs. A plasma display device can be obtained.

FIG. 15 is a diagram showing another embodiment of the liquid crystal display device.
A liquid crystal display device (electro-optical device) 901 illustrated in FIG. 15 includes a color liquid crystal panel (electro-optical panel) 902 and a circuit board 903 connected to the liquid crystal panel 902. Further, an illumination device such as a backlight and other incidental devices are attached to the liquid crystal panel 902 as necessary.

  The liquid crystal panel 902 includes a pair of substrates 905a and 905b bonded by a sealant 904, and liquid crystal is sealed in a gap formed between the substrates 905b and 905b, a so-called cell gap. . These substrates 905a and 905b are generally formed of a light-transmitting material such as glass or synthetic resin. A polarizing plate 906a and a polarizing plate 906b are attached to the outer surfaces of the substrate 905a and the substrate 905b. In FIG. 15, the polarizing plate 906b is not shown.

  An electrode 907a is formed on the inner surface of the substrate 905a, and an electrode 907b is formed on the inner surface of the substrate 905b. These electrodes 907a and 907b are formed in stripes or letters, numbers, or other appropriate patterns. The electrodes 907a and 907b are made of a light-transmitting material such as ITO (Indium Tin Oxide). The substrate 905a has a protruding portion that protrudes from the substrate 905b, and a plurality of terminals 908 are formed on the protruding portion. These terminals 908 are formed simultaneously with the electrode 907a when the electrode 907a is formed over the substrate 905a. Therefore, these terminals 908 are made of, for example, ITO. These terminals 908 include one that extends integrally from the electrode 907a and one that is connected to the electrode 907b via a conductive material (not shown).

  On the circuit board 903, a semiconductor element 900 as a liquid crystal driving IC is mounted at a predetermined position on the wiring board 909. Although not shown, a resistor, a capacitor, and other chip components may be mounted at predetermined positions other than the portion where the semiconductor element 900 is mounted. The wiring substrate 909 is manufactured by forming a wiring pattern 912 by patterning a metal film such as Cu formed on a flexible base substrate 911 such as polyimide.

In this embodiment, the electrodes 907a and 907b in the liquid crystal panel 902 and the wiring pattern 912 in the circuit board 903 are formed by the device manufacturing method.
According to the liquid crystal display device of the present embodiment, it is possible to obtain a high-quality liquid crystal display device in which nonuniformity in electrical characteristics is eliminated.

  Note that the above-described example is a passive liquid crystal panel, but an active matrix liquid crystal panel may be used. That is, a thin film transistor (TFT) is formed on one substrate, and a pixel electrode is formed for each TFT. In addition, wirings (gate wirings and source wirings) that are electrically connected to the TFTs can be formed using the inkjet technique as described above. On the other hand, a counter electrode or the like is formed on the opposing substrate. The present invention can also be applied to such an active matrix liquid crystal panel.

Next, specific examples of the electronic device of the present invention will be described.
FIG. 16A is a perspective view showing an example of a mobile phone. In FIG. 16A, reference numeral 600 denotes a mobile phone body, and reference numeral 601 denotes a liquid crystal display unit including the liquid crystal display device of the above embodiment.
FIG. 16B is a perspective view illustrating an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 16B, reference numeral 700 denotes an information processing device, 701 denotes an input unit such as a keyboard, 703 denotes an information processing body, and 702 denotes a liquid crystal display unit including the liquid crystal display device of the above embodiment.
FIG. 16C is a perspective view illustrating an example of a wristwatch type electronic device. In FIG. 16C, reference numeral 800 denotes a watch body, and reference numeral 801 denotes a liquid crystal display unit including the liquid crystal display device of the above embodiment.
Since the electronic apparatus shown in FIGS. 16A to 16C includes the liquid crystal display device of the above-described embodiment, high quality and performance can be obtained.
In addition, although the electronic device of this embodiment shall be provided with a liquid crystal device, it can also be set as the electronic device provided with other electro-optical apparatuses, such as an organic electroluminescent display apparatus and a plasma type display apparatus.

Next, an example in which the film pattern formed by the film pattern forming method of the present invention is applied to an antenna circuit will be described.
FIG. 17 shows a non-contact type card medium according to this embodiment. The non-contact type card medium 1400 includes a semiconductor integrated circuit chip 1408 and an antenna circuit 1412 in a casing made up of a card base 1402 and a card cover 1418. And at least one of power supply and data transmission / reception by at least one of electromagnetic waves or capacitive coupling with an external transceiver (not shown).

  In the present embodiment, the antenna circuit 1412 is formed based on the film pattern forming method of the present invention. Therefore, the antenna circuit 1412 can be miniaturized and thinned, and high quality and performance can be obtained.

  As described above, the preferred embodiments according to the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to such examples. Various shapes, combinations, and the like of the constituent members shown in the above-described examples are examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.

It is a figure which shows notionally the film pattern formation method of this invention. It is a schematic perspective view of a droplet discharge device. It is a figure for demonstrating the discharge principle of the liquid material by a piezo method. It is a figure which shows the procedure which forms a wiring pattern. It is the top view which looked at the liquid crystal display device from the counter substrate side. It is sectional drawing which follows the H-H 'line | wire of FIG. It is an equivalent circuit diagram of a liquid crystal display device. It is a partial expanded sectional view of a liquid crystal display device same as the above. It is a figure for demonstrating the process of manufacturing a thin-film transistor. It is a figure for demonstrating the process of manufacturing a thin-film transistor. It is a figure for demonstrating the process of manufacturing a thin-film transistor. It is a figure for demonstrating the process of manufacturing a thin-film transistor. It is a partial expanded sectional view of an organic EL device. It is a disassembled perspective view of a plasma type display apparatus. It is a figure which shows another form of a liquid crystal display device. It is a figure which shows the specific example of the electronic device of this invention. It is a disassembled perspective view of a non-contact type card medium.

Explanation of symbols

B ... bank, P ... substrate (glass substrate), F ... film pattern (conductive film), 30 ... TFT (switching element), 100 ... liquid crystal display device (electro-optical device), 400 ... non-contact type card medium (electronic) machine).

Claims (12)

A method of forming a film pattern by placing a functional liquid on a substrate,
Forming a bank on the substrate;
Disposing the functional liquid in an area partitioned by the bank;
Drying the functional liquid disposed on the substrate,
The film pattern forming method, wherein the bank forming material includes an inorganic material. In the film | membrane pattern formation method of Claim 1,
A method of forming a thin film pattern, comprising the step of imparting higher liquid repellency to the bank than the substrate. In the film | membrane pattern formation method of Claim 1 or Claim 2,
A film pattern forming method, wherein the functional liquid is disposed in a region partitioned by the bank using a droplet discharge method. In the film | membrane pattern formation method in any one of Claims 1-3,
The method for forming a film pattern, wherein the functional liquid contains conductive fine particles. In the film | membrane pattern formation method in any one of Claims 1-3,
The method of forming a film pattern, wherein the functional liquid includes a material that exhibits conductivity by heat treatment or light treatment. A device manufacturing method in which a film pattern is formed on a substrate,
A device manufacturing method, wherein the film pattern is formed on the substrate by the film pattern forming method according to claim 1. The device manufacturing method according to claim 6,
The device manufacturing method, wherein the film pattern constitutes a part of a switching element provided on the substrate.   A device manufactured using the device manufacturing method according to claim 6.   An electro-optical device comprising the device according to claim 8.   An electronic apparatus comprising the electro-optical device according to claim 9. In the manufacturing method of the active matrix substrate,
A first step of forming a gate wiring on the substrate;
A second step of forming a gate insulating film on the gate wiring;
A third step of laminating a semiconductor layer via the gate insulating film;
A fourth step of forming a source electrode and a drain electrode on the gate insulating layer;
A fifth step of disposing an insulating material on the source electrode and the drain electrode;
Forming a pixel electrode electrically connected to the drain electrode,
6. The method of manufacturing an active matrix substrate, wherein the film pattern forming method according to claim 1 is used in at least one of the first step, the fourth step, and the sixth step. . An active matrix substrate manufactured using the method for manufacturing an active matrix substrate according to claim 11.

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