JP2005306952A - Epoxy resin composition as sealing material for light-emitting element - Google Patents
Epoxy resin composition as sealing material for light-emitting element Download PDFInfo
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Abstract
Description
本発明は、水素化エポキシ樹脂及びトリアジン環含有エポキシ樹脂から成るエポキシ樹脂と、酸無水物硬化剤が配合された発光素子封止材用のエポキシ樹脂組成物に関するものであり、その硬化物が耐熱性、耐光性、密着性に優れるため、LED、CCDのような光半導体関連の用途に使用でき、特に短波長の光を発するLEDの封止材として有用である発光素子封止材用エポキシ樹脂組成物に関する。 TECHNICAL FIELD The present invention relates to an epoxy resin composition for a light emitting device sealing material, in which an epoxy resin comprising a hydrogenated epoxy resin and a triazine ring-containing epoxy resin and an acid anhydride curing agent are blended, and the cured product is heat resistant. Epoxy resin for light-emitting device encapsulant that is useful as an encapsulant for LEDs that emit light with a short wavelength, because it has excellent properties, light resistance, and adhesion, and can be used in applications related to optical semiconductors such as LEDs and CCDs. Relates to the composition.
エポキシ樹脂は、耐熱性、接着性、耐水性、機械的強度及び電気特性等に優れていることから、接着剤、塗料、土木建築用材料、電気・電子部品の絶縁材料等、様々の分野で使用されている。このような分野で使用されている常温又は加熱硬化型のエポキシ樹脂としては、ビスフェノ−ルAのジグリシジルエ−テル、ビスフェノ−ルFのジグリシジルエ−テル、フェノ−ル又はクレゾールノボラック型エポキシ樹脂等の芳香族エポキシ樹脂が一般的である。 Epoxy resins are excellent in heat resistance, adhesion, water resistance, mechanical strength, electrical properties, etc., so they are used in various fields such as adhesives, paints, materials for civil engineering and construction, insulating materials for electrical and electronic parts, etc. in use. Normal temperature or heat-curing type epoxy resins used in such fields include fragrance such as diglycidyl ether of bisphenol A, diglycidyl ether of bisphenol F, phenol or cresol novolac type epoxy resin. Group epoxy resins are common.
近年、種々の表示板、画像読み取り用光源、交通信号、大型ディスプレイ用ユニット等に実用化されている光半導体(LED)等の発光装置は、大部分が樹脂封止によって製造されている。このような装置に使用されている封止用の樹脂は、上記の芳香族エポキシ樹脂と、硬化剤として脂環式酸無水物を含有するものが一般的である。 In recent years, most of light emitting devices such as optical semiconductors (LEDs) that have been put to practical use in various display panels, image reading light sources, traffic signals, large display units, and the like are manufactured by resin sealing. The sealing resin used in such an apparatus generally contains the above aromatic epoxy resin and an alicyclic acid anhydride as a curing agent.
また、今日のLEDの飛躍的な進歩により、LED素子の高出力化及び短波長化が急速に現実のものとなり始めていて、特に窒化物半導体を用いたLEDは、短波長でかつ高出力な発光が可能となる。しかしながら、窒化物半導体を用いたLED素子を、上述の芳香族エポキシ樹脂で封止すると、芳香環が短波長の光を吸収するため経時的に封止した樹脂の劣化が起こり、黄変により発光輝度が顕著に低下するという問題が発生する。 Also, due to the dramatic progress of today's LEDs, high output and short wavelength of LED elements are rapidly becoming a reality, especially LEDs using nitride semiconductors have a short wavelength and high output light emission. Is possible. However, when an LED element using a nitride semiconductor is sealed with the above-described aromatic epoxy resin, the aromatic ring absorbs light of a short wavelength, so that the resin sealed over time deteriorates, and light emission occurs due to yellowing. There arises a problem that the luminance is significantly reduced.
そこで、3,4−エポキシシクロヘキシルメチル−3’,4’−エポキシシクロヘキサンカルボキシレートで代表される、環状オレフィンを酸化して得られる脂環式エポキシ樹脂を用いて封止したLEDが提案されている(特許文献1、特許文献2)。
しかし、上記脂環式エポキシ樹脂で封止した硬化樹脂は非常に脆く、冷熱サイクルによって亀裂破壊を生じ易く、耐湿性も極端に悪いため、長時間の信頼特性が要求される用途には不向きであった。
Therefore, an LED sealed with an alicyclic epoxy resin obtained by oxidizing a cyclic olefin, represented by 3,4-epoxycyclohexylmethyl-3 ′, 4′-epoxycyclohexanecarboxylate, has been proposed. (Patent Document 1, Patent Document 2).
However, the cured resin encapsulated with the above alicyclic epoxy resin is very fragile, easily cracked by the thermal cycle, and extremely poor in moisture resistance, so it is not suitable for applications that require long-term reliability. there were.
そこで、水添ビスフェノールA型エポキシ樹脂を主体とし、脂環式エポキシ樹脂及びリン系酸化防止剤を配合し、無水メチルヘキサヒドロフタル酸硬化剤を用い封止したLEDが提案されている(特許文献3)。このエポキシ硬化物は無色透明性に優れるが、耐熱性が低下するため黄変しやすいという欠点があり、熱に対する特性を要求されるLED素子を封止する用途には問題がある。 In view of this, an LED has been proposed in which a hydrogenated bisphenol A type epoxy resin is the main component, an alicyclic epoxy resin and a phosphorus antioxidant are blended, and sealed with a methylhexahydrophthalic anhydride curing agent (Patent Literature). 3). Although this epoxy cured product is excellent in colorless and transparent properties, it has a drawback that it tends to yellow due to a decrease in heat resistance, and there is a problem in applications for sealing LED elements that require heat resistance.
更に、トリアジン誘導体エポキシ樹脂単独と酸無水物硬化剤を用いる方法も提案されている(特許文献4)。この硬化物の耐熱性は改善されるが、非常に脆いため前記の脂環式エポキシ樹脂と同様に冷熱サイクルによって亀裂破壊を生じ易く、かつ耐湿性も極端に悪いため、長時間の信頼特性が要求される用途には不向きであった。 Furthermore, a method using a triazine derivative epoxy resin alone and an acid anhydride curing agent has also been proposed (Patent Document 4). Although the heat resistance of this cured product is improved, it is very brittle, so that it is easy to cause crack fracture by the thermal cycle as in the case of the alicyclic epoxy resin, and the moisture resistance is extremely bad. It was unsuitable for the required use.
そこで、無色透明の硬化物が得られ、かつ耐熱性及び密着性に優れ、エポキシ硬化物の脆さを改善するLED封止材の根本的問題の解決方法が待たれていた。 Therefore, a solution for the fundamental problem of the LED encapsulant that can obtain a colorless and transparent cured product, is excellent in heat resistance and adhesion, and improves the brittleness of the epoxy cured product has been awaited.
本発明は、上記のような耐熱性及び脆さの問題点がなく、無色透明性に優れた硬化物を与えることができ、特に短波長の光を発するLEDの封止材として有用である発光素子封止材用エポキシ樹脂組成物を提供しようとするものである。 The present invention does not have the problems of heat resistance and brittleness as described above, can give a cured product having excellent colorless transparency, and is particularly useful as a sealing material for LEDs emitting short-wavelength light. An object of the present invention is to provide an epoxy resin composition for an element sealing material.
本発明は、以下の各発明を包含する。 The present invention includes the following inventions.
(1)(A)成分;芳香族エポキシ樹脂を直接水素化して得られる芳香環の水素化率が90〜100%の水素化エポキシ樹脂20〜95質量%、トリアジン環含有エポキシ樹脂5〜80質量%、及び脂環式オレフィンをエポキシ化して得られる脂環式エポキシ樹脂を0〜50質量%含有するエポキシ樹脂
(B)成分;酸無水物硬化剤
(C)成分;硬化促進剤
上記(A)、(B)及び(C)の成分を含有して成る発光素子封止材用エポキシ樹脂組成物。
(1) Component (A): 20 to 95% by mass of a hydrogenated epoxy resin having an aromatic ring hydrogenation ratio of 90 to 100% obtained by directly hydrogenating an aromatic epoxy resin, and 5 to 80% by mass of a triazine ring-containing epoxy resin %, And an epoxy resin (B) component containing 0 to 50% by mass of an alicyclic epoxy resin obtained by epoxidizing an alicyclic olefin; an acid anhydride curing agent (C) component; a curing accelerator (A) An epoxy resin composition for a light emitting device sealing material, comprising the components (B) and (C).
(2)(A)成分における水素化エポキシ樹脂は、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂及びビフェノール型エポキシ樹脂から選ばれるエポキシ樹脂を直接水素化して得られるエポキシ樹脂から選ばれる1種以上の水素化エポキシ樹脂であることを特徴とする、前記(1)記載の発光素子封止材用エポキシ樹脂組成物。 (2) The hydrogenated epoxy resin in component (A) is one or more selected from epoxy resins obtained by directly hydrogenating an epoxy resin selected from bisphenol A type epoxy resin, bisphenol F type epoxy resin and biphenol type epoxy resin The epoxy resin composition for a light-emitting device sealing material according to (1), wherein the epoxy resin composition is a hydrogenated epoxy resin.
(3)前記(A)成分におけるトリアジン環含有エポキシ樹脂は、トリグリシジルイソシアヌレートであることを特徴とする、前記(1)又は(2)に記載の発光素子封止材用エポキシ樹脂組成物。 (3) The epoxy resin composition for light-emitting element sealing materials according to (1) or (2), wherein the triazine ring-containing epoxy resin in the component (A) is triglycidyl isocyanurate.
(4)(B)成分の酸無水物硬化剤は、無水ヘキサヒドロフタル酸及び/又は無水メチルヘキサヒドロフタル酸であり、(C)成分の硬化促進剤が3級アミン類及びその塩類、イミダゾール類及びその塩類、有機ホスフィン化合物類及びその塩類、及び有機酸金属塩類から選ばれる少なくとも1種類の硬化促進剤であることを特徴とする、前記(1)〜(3)のいずれか1項に記載の発光素子封止材用エポキシ樹脂組成物。 (4) The acid anhydride curing agent of component (B) is hexahydrophthalic anhydride and / or methyl hexahydrophthalic anhydride, and the curing accelerator of component (C) is a tertiary amine and salts thereof, imidazole Any one of the above (1) to (3), characterized in that it is at least one type of curing accelerator selected from the group consisting of salts and salts thereof, organic phosphine compounds and salts thereof, and organic acid metal salts. The epoxy resin composition for light emitting element sealing materials of description.
(5)前記(A)成分のエポキシ樹脂中に、脂環式オレフィンをエポキシ化して得られる脂環式エポキシ樹脂が5〜50質量%の割合で配合されていることを特徴とする、前記(1)〜(4)のいずれか1項に記載の発光素子封止材用エポキシ樹脂組成物。 (5) In the epoxy resin of the component (A), an alicyclic epoxy resin obtained by epoxidizing an alicyclic olefin is blended in a proportion of 5 to 50% by mass, The epoxy resin composition for light emitting element sealing materials of any one of 1)-(4).
(6)フェノール系酸化防止剤、硫黄系酸化防止剤及びリン系酸化防止剤から選ばれる少なくとも1種類の酸化防止剤又は/及び紫外線吸収剤が0.01〜10質量部配合されて成る、前記(1)〜(5)のいずれかに1項に記載の発光素子封止材用エポキシ樹脂組成物。 (6) The above-mentioned composition comprising 0.01 to 10 parts by mass of at least one antioxidant selected from a phenolic antioxidant, a sulfurous antioxidant and a phosphorus antioxidant, and / or an ultraviolet absorber. The epoxy resin composition for a light-emitting element sealing material according to any one of (1) to (5).
(7)発光素子が、その発光層が350〜550nmに主発光ピークを有する発光素子であることを特徴とする、前記(1)〜(6)のいずれかに1項に記載の発光素子封止材用エポキシ樹脂組成物。 (7) The light-emitting device according to any one of (1) to (6), wherein the light-emitting device is a light-emitting device whose light-emitting layer has a main light emission peak at 350 to 550 nm. Epoxy resin composition for fastening materials.
(8)発光素子が発光ダイオード(LED)であることを特徴とする、前記(1)〜(7)のいずれか1項に記載の発光素子封止材用エポキシ樹脂組成物。 (8) The epoxy resin composition for a light-emitting element sealing material according to any one of (1) to (7), wherein the light-emitting element is a light-emitting diode (LED).
本発明の発光素子封止材用エポキシ樹脂組成物の硬化物は耐熱性及び密着性に優れ、また、耐光性も優れるため、短波長の光を放出するIII族窒化物系化合物半導体を封止するLED封止材用エポキシ樹脂組成物として特に有利に使用できる。 The cured product of the epoxy resin composition for a light emitting device sealing material of the present invention is excellent in heat resistance and adhesion, and also has excellent light resistance, and therefore encapsulates a group III nitride compound semiconductor that emits light of a short wavelength. It can be used particularly advantageously as an epoxy resin composition for an LED sealing material.
(水素化エポキシ樹脂)
本発明の発光素子封止材用エポキシ樹脂組成物の(A)成分における水素化エポキシ樹脂は、芳香族エポキシ樹脂を水素化したエポキシ樹脂である。このエポキシ樹脂の例としては、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、3、3’,5,5’−テトラメチル−4,4’−ビフェノール型エポキシ樹脂又は4,4’−ビフェノール型エポキシ樹脂のようなビフェノール型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビスフェノールAノボラック型エポキシ樹脂、ナフタレンジオール型エポキシ樹脂、トリスフェニロールメタン型エポキシ樹脂、テトラキスフェニロールエタン型エポキシ樹脂、及びフェノールジシクロペンタジエンノボラック型エポキシ樹脂の芳香環を水素化したエポキシ樹脂等が挙げられる。これらの中で、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂及びビフェノール型エポキシ樹脂の芳香環を直接水添した水素化エポキシ樹脂が、高水添率のエポキシ樹脂が得られるという点で特に好ましい。
(Hydrogenated epoxy resin)
The hydrogenated epoxy resin in the component (A) of the epoxy resin composition for a light emitting device sealing material of the present invention is an epoxy resin obtained by hydrogenating an aromatic epoxy resin. Examples of this epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, 3,3 ′, 5,5′-tetramethyl-4,4′-biphenol type epoxy resin, or 4,4′-biphenol type. Biphenol type epoxy resin such as epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolac type epoxy resin, naphthalenediol type epoxy resin, trisphenylol methane type epoxy resin, tetrakisphenylol ethane type epoxy resin And an epoxy resin obtained by hydrogenating an aromatic ring of a phenol dicyclopentadiene novolac type epoxy resin. Among these, hydrogenated epoxy resins obtained by directly hydrogenating the aromatic rings of bisphenol A type epoxy resin, bisphenol F type epoxy resin and biphenol type epoxy resin are particularly preferable in that an epoxy resin having a high hydrogenation rate can be obtained.
本発明のエポキシ樹脂組成物における水素化エポキシ樹脂の水素化率は分光光度計を用い、吸光度の変化(波長;275nm)を求めることにより測定できる。本発明の水素化エポキシ樹脂の水素化率は90〜100%の範囲が好ましく、95〜100%の範囲が更に好ましい。水素化率が90%未満であると、窒化物半導体のLEDを封止した時、短波長の光を吸収し経時的に樹脂の劣化が起こり、黄変により発光輝度が顕著に低下するため好ましくない。 The hydrogenation rate of the hydrogenated epoxy resin in the epoxy resin composition of the present invention can be measured by determining the change in absorbance (wavelength; 275 nm) using a spectrophotometer. The hydrogenation rate of the hydrogenated epoxy resin of the present invention is preferably in the range of 90 to 100%, more preferably in the range of 95 to 100%. When the hydrogenation rate is less than 90%, when a nitride semiconductor LED is encapsulated, it absorbs light of a short wavelength and the resin deteriorates with time, and the emission luminance is significantly reduced due to yellowing, which is preferable. Absent.
本発明の発光素子封止材用エポキシ樹脂組成物に用いる水素化エポキシ樹脂は、触媒の存在下、公知の方法で芳香族エポキシ樹脂の芳香環を選択的に水素化することにより得られる。より好ましい反応方法の例としては、芳香族エポキシ樹脂を有機溶剤に溶解し、ロジウム又はルテニウムをグラファイトに担持した触媒の存在下、芳香環を選択的に水素化する方法が挙げられる。グラファイトは、表面積が10m2/g〜400m2/gの範囲の担体に担持させたものを用いる。反応は、圧力1〜30MPa、温度30〜150℃、時間0.5〜20時間の範囲内で行う。反応終了後、触媒を濾過により除去し、有機溶剤を減圧で実質的に無くなるまで留去し、水素化エポキシ樹脂を得ることができる。 The hydrogenated epoxy resin used in the epoxy resin composition for a light emitting device sealing material of the present invention can be obtained by selectively hydrogenating the aromatic ring of an aromatic epoxy resin by a known method in the presence of a catalyst. An example of a more preferable reaction method is a method in which an aromatic epoxy resin is dissolved in an organic solvent, and an aromatic ring is selectively hydrogenated in the presence of a catalyst in which rhodium or ruthenium is supported on graphite. Graphite used as the surface area is supported on a carrier in the range of 10m 2 / g~400m 2 / g. The reaction is carried out within a range of pressure 1-30 MPa, temperature 30-150 ° C., and time 0.5-20 hours. After completion of the reaction, the catalyst is removed by filtration, and the organic solvent is distilled off under reduced pressure until it substantially disappears to obtain a hydrogenated epoxy resin.
(トリアジン環含有エポキシ樹脂)
本発明の発光素子封止材用エポキシ樹脂組成物の(A)成分における、トリアジン環含有エポキシ樹脂としては、トリグリシジルイソシヌレート、トリス(α−メチルグリシジル)イソシヌレート、トリス(β−メチルグリシジル)イソシヌレート等が挙げられ、これらの中で好ましいのがトリグリシジルイソシヌレートである。
(Triazine ring-containing epoxy resin)
Examples of the triazine ring-containing epoxy resin in the component (A) of the epoxy resin composition for a light emitting device sealing material of the present invention include triglycidyl isocyanurate, tris (α-methylglycidyl) isosinurate, tris (β-methylglycidyl) Examples thereof include isocyanurate and the like. Among these, triglycidyl isosinurate is preferable.
前記の水素化エポキシ樹脂及びトリアジン環含有エポキシ樹脂の使用割合は、水素化エポキシ樹脂20〜95質量%に対し、トリアジン環含有エポキシ樹脂5〜80質量%の割合である。トリアジン環含有エポキシ樹脂が5質量%未満であると耐熱性の改良効果が不十分であり、80質量%を越えると脆くなるため好ましくない。 The ratio of the hydrogenated epoxy resin and the triazine ring-containing epoxy resin is 5 to 80% by mass of the triazine ring-containing epoxy resin with respect to 20 to 95% by mass of the hydrogenated epoxy resin. If the triazine ring-containing epoxy resin is less than 5% by mass, the effect of improving the heat resistance is insufficient, and if it exceeds 80% by mass, the brittleness becomes brittle.
更に、脂環式オレフィンをエポキシ化して得られる脂環式エポキシ樹脂を水素化エポキシ樹脂及びトリアジン環含有エポキシ樹脂中に5〜50質量%で併用することができる。特に好ましい脂環式エポキシ樹脂は3,4−エポキシシクロヘキシルメチル−3’,4’−エポキシシクロヘキサンカルボキシレートであり、この脂環式エポキシ樹脂を配合すると、エポキシ樹脂組成物の配合粘度を低下でき作業性を向上させることができる。 Furthermore, an alicyclic epoxy resin obtained by epoxidizing an alicyclic olefin can be used together in a hydrogenated epoxy resin and a triazine ring-containing epoxy resin at 5 to 50% by mass. A particularly preferred alicyclic epoxy resin is 3,4-epoxycyclohexylmethyl-3 ′, 4′-epoxycyclohexanecarboxylate. When this alicyclic epoxy resin is blended, the blending viscosity of the epoxy resin composition can be lowered. Can be improved.
(酸無水物硬化剤)
本発明の発光素子封止材用エポキシ樹脂組成物中における酸無水物硬化剤は、分子中に炭素−炭素の二重結合を持たない酸無水物硬化剤が好ましい。具体的には、無水ヘキサヒドロフタル酸、無水メチルヘキサヒドロフタル酸、水添無水ナジック酸、水添無水メチルナジック酸、水添無水トリアルキルヘキサヒドロフタル酸、無水2,4−ジエチルグルタル酸等が挙げられる。これらの中で、無水ヘキサヒドロフタル酸又は/及び無水メチルヘキサヒドロフタル酸が耐熱性に優れ、無色の硬化物が得られる点で特に好ましい。
(Acid anhydride curing agent)
The acid anhydride curing agent in the epoxy resin composition for a light emitting device sealing material of the present invention is preferably an acid anhydride curing agent having no carbon-carbon double bond in the molecule. Specifically, hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, hydrogenated nadic anhydride, hydrogenated methyl nadic anhydride, hydrogenated trialkylhexahydrophthalic anhydride, 2,4-diethylglutaric anhydride, etc. Is mentioned. Among these, hexahydrophthalic anhydride and / or methyl hexahydrophthalic anhydride are particularly preferable in that they are excellent in heat resistance and a colorless cured product can be obtained.
酸無水物硬化剤の使用割合はエポキシ樹脂のエポキシ当量により異なるが、好ましくはエポキシ樹脂100質量部に対し、40〜200質量部の範囲内で配合される。 Although the usage-amount of an acid anhydride hardening | curing agent changes with the epoxy equivalent of an epoxy resin, Preferably it mix | blends in 40-200 mass parts with respect to 100 mass parts of epoxy resins.
(硬化促進剤)
本発明の発光素子封止材用エポキシ樹脂組成物中へ、エポキシ樹脂と酸無水物の硬化反応を促進する目的で硬化促進剤を使用することができる。硬化促進剤の例としては、3級アミン類及びその塩類、イミダゾール類及びその塩類、有機ホスフィン化合物類、オクチル酸亜鉛、オクチル酸スズ等の有機酸金属塩類が挙げられ、特に好ましい硬化促進剤は、有機ホスフィン化合物類である。添加する硬化促進剤の配合割合は、水素化酸無水物硬化剤100質量部に対し、0.01〜10質量部の範囲内である。この範囲を外れると、エポキシ樹脂硬化物の耐熱性及び耐湿性のバランスが悪くなるため好ましくない。
(Curing accelerator)
A curing accelerator can be used in the epoxy resin composition for a light emitting device sealing material of the present invention for the purpose of accelerating the curing reaction between the epoxy resin and the acid anhydride. Examples of curing accelerators include tertiary amines and salts thereof, imidazoles and salts thereof, organic phosphine compounds, zinc octylates, tin octylates and other organic acid metal salts, and particularly preferred curing accelerators are Organic phosphine compounds. The mixing ratio of the curing accelerator to be added is in the range of 0.01 to 10 parts by mass with respect to 100 parts by mass of the hydrogenated anhydride curing agent. Outside this range, the balance of heat resistance and moisture resistance of the cured epoxy resin is deteriorated, which is not preferable.
(酸化防止剤)
本発明のLED封止材用エポキシ樹脂組成物中に酸化防止剤を配合することにより、加熱時の酸化劣化を防止し着色の少ない硬化物とすることが好ましい。使用できる酸化防止剤は、フェノール系、硫黄系、リン系酸化防止剤を使用でき、エポキシ樹脂組成物100質量部中に0.01〜10質量部配合される。使用できる酸化防止剤の具体例としては、以下のような酸化防止剤が挙げられる。
(Antioxidant)
By blending an antioxidant in the epoxy resin composition for an LED sealing material of the present invention, it is preferable to prevent oxidative deterioration during heating and to obtain a cured product with little coloring. The antioxidant which can be used can use a phenol type, sulfur type, and phosphorus type antioxidant, and 0.01-10 mass parts is mix | blended in 100 mass parts of epoxy resin compositions. Specific examples of the antioxidant that can be used include the following antioxidants.
<モノフェノール類>
2,6−ジ−t−ブチル−p−クレゾール、ブチル化ヒドロキシアニソール、2,6−ジ−t−ブチル−p−エチルフェノール、ステアリル−β−(3,5−ジ−t−ブチル−4−ヒドロキシフェニル)プロピオネート等。
<ビスフェノール類>
2,2’−メチレンビス(4−メチル−6−t−ブチルフェノール)、2,2’−メチレンビス(4−エチル−6−t−ブチルフェノール)、4,4’−チオビス(3−メチル−6−t−ブチルフェノール)、4,4’−ブチリデンビス(3−メチル−6−t−ブチルフェノール)、3,9−ビス[1,1−ジメチル−2−{β−(3−t−ブチル−4−ヒドロキシ−5−メチルフェニル)プロピオニルオキシ}エチル]2,4,8,10−テトラオキサスピロ[5,5]ウンデカン等。
<Monophenols>
2,6-di-t-butyl-p-cresol, butylated hydroxyanisole, 2,6-di-t-butyl-p-ethylphenol, stearyl-β- (3,5-di-t-butyl-4 -Hydroxyphenyl) propionate and the like.
<Bisphenols>
2,2′-methylenebis (4-methyl-6-tert-butylphenol), 2,2′-methylenebis (4-ethyl-6-tert-butylphenol), 4,4′-thiobis (3-methyl-6-t) -Butylphenol), 4,4′-butylidenebis (3-methyl-6-tert-butylphenol), 3,9-bis [1,1-dimethyl-2- {β- (3-tert-butyl-4-hydroxy-) 5-methylphenyl) propionyloxy} ethyl] 2,4,8,10-tetraoxaspiro [5,5] undecane and the like.
<高分子型フェノール類>
1,1,3−トリス(2−メチル−4−ヒドロキシ−5−t−ブチルフェニル)ブタン、1,3,5−トリメチル−2,4,6−トリス(3,5−ジ−t−ブチル−4−ヒドロキシベンジル)ベンゼン、テトラキス−[メチレン−3−(3’,5’−ジ−t−ブチル−4’−ヒドロキシフェニル)プロピオネート]メタン、ビス[3,3’−ビス−(4’−ヒドロキシ−3’−t−ブチルフェニル)ブチリックアシッド]グリコールエステル、1,3,5−トリス(3’,5’−ジ−t−ブチル−4’−ヒドロ キシベンジル)−S−トリアジンー2,4,6−(1H,3H,5H)トリオン、トコフェノール等。
<Polymer type phenols>
1,1,3-tris (2-methyl-4-hydroxy-5-tert-butylphenyl) butane, 1,3,5-trimethyl-2,4,6-tris (3,5-di-tert-butyl) -4-hydroxybenzyl) benzene, tetrakis- [methylene-3- (3 ', 5'-di-t-butyl-4'-hydroxyphenyl) propionate] methane, bis [3,3'-bis- (4'-Hydroxy-3'-t-butylphenyl) butyric acid] glycol ester, 1,3,5-tris (3 ', 5'-di-t-butyl-4'-hydroxybenzyl) -S-triazine-2 4,6- (1H, 3H, 5H) trione, tocophenol and the like.
<硫黄系酸化防止剤>
ジラウリル−3,3’−チオジプロピオネート、ジミリスチル−3,3’−チオジプロピオネート、ジステアリルル−3,3’−チオジプロピオネート等。
<Sulfur-based antioxidant>
Dilauryl-3,3′-thiodipropionate, dimyristyl-3,3′-thiodipropionate, distearyl-3,3′-thiodipropionate, and the like.
<リン系酸化防止剤>
ホスファイト類;トリフェニルホスファイト、ジフェニルイソデシルホスファイト、フェニルジイソデシルホスファイト、トリス(ノニルフェニル)ホスファイト、ジイソデシルペンタエリスリトールホスファイト、トリス(2,4−ジ−t−ブチルフェニル)ホスファイト、サイクリックネオペンタンテトライルビス(オクタデシル)ホスファイト、サイクリックネオペンタンテトライルビ(2,4−ジ−t−ブチルフェニル)ホスファイト、サイクリックネオペンタンテトライルビ(2,4−ジ−t−ブチル−4−メチルフェニル)ホスファイト、ビス[2−t−ブチル−6−メチル−4−{2−(オクタデシルオキシカルボニル)エチル}フェニル]ヒドロゲンホスファイト等。
<Phosphorus antioxidant>
Phosphites; triphenyl phosphite, diphenylisodecyl phosphite, phenyl diisodecyl phosphite, tris (nonylphenyl) phosphite, diisodecylpentaerythritol phosphite, tris (2,4-di-t-butylphenyl) phosphite, Cyclic neopentanetetraylbis (octadecyl) phosphite, cyclic neopentanetetraylbi (2,4-di-t-butylphenyl) phosphite, cyclic neopentanetetraylbi (2,4-di-t-butyl) -4-methylphenyl) phosphite, bis [2-tert-butyl-6-methyl-4- {2- (octadecyloxycarbonyl) ethyl} phenyl] hydrogen phosphite, and the like.
<オキサホスファフェナントレンオキサイド類>
9,10−ジヒドロ−9−オキサ−10−ホスファフェナントレン−10−オキサイド、10−(3,5−ジ−t−ブチル−4−ヒドロキシベンジル)−9,10−ジヒドロ−9−オキサ−10−ホスファフェナントレン−10−オキサイド、10−デシロキシ−9,10−ジヒドロ−9−オキサ−10−ホスファフェナントレン−10−オキサイド等が挙げられる。
これらの酸化防止剤はそれぞれ単独で使用できるが、フェノール系/硫黄系又はフェノール系/リン系と組み合わせて使用することが特に好ましい。
<Oxaphosphaphenanthrene oxides>
9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide, 10- (3,5-di-tert-butyl-4-hydroxybenzyl) -9,10-dihydro-9-oxa-10 -Phosphaphenanthrene-10-oxide, 10-decyloxy-9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide, etc. are mentioned.
These antioxidants can be used alone, but it is particularly preferable to use them in combination with phenol / sulfur or phenol / phosphorus.
(紫外線吸収剤)
本発明の封止材用エポキシ樹脂組成物100質量部中に、紫外線吸収剤を0.01〜10質量部配合し、更に耐光性を向上させることができる。配合できる紫外線吸収剤は、一般のプラスチック用紫外線吸収剤を使用でき、例としては次のものが挙げられる。
(UV absorber)
Into 100 parts by mass of the epoxy resin composition for a sealing material of the present invention, 0.01 to 10 parts by mass of an ultraviolet absorber can be blended to further improve the light resistance. The ultraviolet absorber which can be mix | blended can use the general ultraviolet absorber for plastics, The following are mentioned as an example.
フェニルサリシレート、p−t−ブチルフェニルサリシレート、p−オクチルフェニルサリシレート等のサリチル酸類、2,4−ジヒドロキシベンゾフェノン、2−ヒドロキシ−4−メトキシベンゾフェノン、2−ヒドロキシ−4−オクトキシベンゾフェノン、2−ヒドロキシ−4−ドデシルオキシベンゾフェノン、2,2’−ジヒドロキシ−4−メトキシベンゾフェノン、2,2’−ジヒドロキシ−4,4’−ジメトキシベンゾフェノン、2−ヒドロキシ−4−メトキシ−5−スルホベンゾフェノン等のベンゾフェノン類、2−(2’−ヒドロキシ−5’−メチルフェニル)ベンゾトリアゾール、2−(2’−ヒドロキシ−5’−tert−ブチルフェニル)ベンゾトリアゾール、2−(2’−ヒドロキシ−3’,5’−ジtert−ブチルフェニル)ベンゾトリアゾール、2−(2’−ヒドロキシ−3’−tert−ブチル−5’−メチルフェニル)−5−クロロベンゾトリアゾール、2−(2’−ヒドロキシ−3’,5’−ジtert−ブチルフェニル)−5−クロロベンゾトリアゾール、2−(2’−ヒドロキシ−3’、5’−ジtert−アミルフェニル)ベンゾトリアゾール、2−{(2’−ヒドロキシ−3’、3’’、4’’、5’’、6’’−テトラヒドロフタルイミドメチル)−5’−メチルフェニル}ベンゾトリアゾール等のベンゾトリアゾール類、ビス(2,2,6,6−テトラメチル−4−ピペリジル)セバケート、ビス(1,2,2,6,6−ペンタメチル−4−ピペリジル)セバケート、ビス(1,2,2,6,6−ペンタメチル−4−ピペリジル)[{3,5−ビス(1,1−ジメチルエチル)−4−ヒドリキシフェニル}メチル]ブチルマロネート等のヒンダート
アミン類。
Salicylic acids such as phenyl salicylate, pt-butylphenyl salicylate, p-octylphenyl salicylate, 2,4-dihydroxybenzophenone, 2-hydroxy-4-methoxybenzophenone, 2-hydroxy-4-octoxybenzophenone, 2-hydroxy Benzophenones such as -4-dodecyloxybenzophenone, 2,2'-dihydroxy-4-methoxybenzophenone, 2,2'-dihydroxy-4,4'-dimethoxybenzophenone, 2-hydroxy-4-methoxy-5-sulfobenzophenone 2- (2′-hydroxy-5′-methylphenyl) benzotriazole, 2- (2′-hydroxy-5′-tert-butylphenyl) benzotriazole, 2- (2′-hydroxy-3 ′, 5 ′ -Di-tert-butylphenyl) Nzotriazole, 2- (2′-hydroxy-3′-tert-butyl-5′-methylphenyl) -5-chlorobenzotriazole, 2- (2′-hydroxy-3 ′, 5′-ditert-butyl Phenyl) -5-chlorobenzotriazole, 2- (2′-hydroxy-3 ′, 5′-ditert-amylphenyl) benzotriazole, 2-{(2′-hydroxy-3 ′, 3 ″, 4 ′) Benzotriazoles such as' 5 ″, 6 ″ -tetrahydrophthalimidomethyl) -5′-methylphenyl} benzotriazole, bis (2,2,6,6-tetramethyl-4-piperidyl) sebacate, bis ( 1,2,2,6,6-pentamethyl-4-piperidyl) sebacate, bis (1,2,2,6,6-pentamethyl-4-piperidyl) [{3,5-bis (1,1-dimethylethyl ) Hindered amines such as 4-hydrido hydroxyphenyl} methyl] butyl malonate.
(発光素子)
本発明の発光素子封止材用エポキシ樹脂組成物は、耐光性に優れることにより、封止する発光素子は、ピーク波長が350〜550nmの比較的短い波長の光を発光する素子が好適である。
(Light emitting element)
The epoxy resin composition for a light emitting device sealing material of the present invention is excellent in light resistance, and the light emitting device to be sealed is preferably a device that emits light with a relatively short wavelength having a peak wavelength of 350 to 550 nm. .
このような発光素子としては有機金属気相成長法(MOCVD法)、分子線結晶成長法(MBE法)ハライド系気相成長法(HVPE法)により形成されたIII族窒化物系化合物半導体が挙げられ、一般式としてAlXGaYIn1-X-YN(0≦X≦1,0≦Y≦1,0≦X+Y≦1)で表され、AlX、GaN及びInNのいわゆる2元系、AlXGa1-XN、AlXIn1-XN及びGaXIn1-XN(以上において0≦X≦1)のいわゆる3元系を包含する。半導体の構造としては、MIS接合、PIN接合やpn接合などを有するホモ構造、ヘテロ構造あるいはダブルヘテロ構成のものが挙げられる。半導体層の材料やその混晶度によって発光波長を種々選択することができる。また、半導体活性層を量子効果が生ずる薄膜に形成させた単一量子井戸構造や多重量子井戸構造とすることもできる。 Examples of such a light emitting device include a group III nitride compound semiconductor formed by metal organic chemical vapor deposition (MOCVD), molecular beam crystal growth (MBE), or halide vapor deposition (HVPE). Al x Ga y In 1-XY N (0 ≦ X ≦ 1, 0 ≦ Y ≦ 1, 0 ≦ X + Y ≦ 1) as a general formula, and a so-called binary system of Al x , GaN and InN, Al including so-called ternary X Ga 1-X N, Al X in 1-X N and Ga X in 1-X N (or at 0 ≦ X ≦ 1). Examples of the semiconductor structure include a homostructure having a MIS junction, a PIN junction, and a pn junction, a heterostructure, and a double heterostructure. Various emission wavelengths can be selected depending on the material of the semiconductor layer and the degree of mixed crystal. In addition, a single quantum well structure or a multiple quantum well structure in which the semiconductor active layer is formed in a thin film in which a quantum effect is generated can be used.
(任意成分)
本発明の発光素子封止材用エポキシ樹脂組成物には、必要に応じて次の成分を添加配合することができる。
(Optional component)
The following components can be added and blended with the epoxy resin composition for a light emitting device sealing material of the present invention as required.
(1)粉末状の補強剤や充填剤、たとえば酸化アルミニウム、酸化マグネシウムなどの金属酸化物、微粉末シリカ、溶融シリカ、結晶シリカなどのケイ素化合物、ガラスビーズ等の透明フィラー、水酸化アルミニウムなどの金属水酸化物、その他、カオリン、マイカ、石英粉末、グラファイト、二硫化モリブデン等。
これらの配合は、本発明のエポキシ組成物の透明性を損なわない範囲で配合され、本発明の組成物100質量部に対して、10〜100質量部が適当である。
(1) Powdery reinforcing agents and fillers such as metal oxides such as aluminum oxide and magnesium oxide, silicon compounds such as fine powder silica, fused silica and crystalline silica, transparent fillers such as glass beads, and aluminum hydroxide Metal hydroxide, others, kaolin, mica, quartz powder, graphite, molybdenum disulfide, etc.
These compounding is mix | blended in the range which does not impair the transparency of the epoxy composition of this invention, and 10-100 mass parts is suitable with respect to 100 mass parts of compositions of this invention.
(2)着色剤又は顔料、たとえば二酸化チタン、モリブデン赤、紺青、群青、カドミウム黄、カドミウム赤及び有機色素等。
(3)難燃剤、たとえば、三酸化アンチモン、ブロム化合物及びリン化合物等。
(4)イオン吸着体。
(5)カップリング剤
これらは本発明のエポキシ樹脂組成物100質量部に対して、0.01〜30質量部配合される。
(2) Colorants or pigments such as titanium dioxide, molybdenum red, bitumen, ultramarine blue, cadmium yellow, cadmium red and organic dyes.
(3) Flame retardants such as antimony trioxide, bromine compounds and phosphorus compounds.
(4) Ion adsorbent.
(5) Coupling agent 0.01-30 mass parts of these are mix | blended with respect to 100 mass parts of epoxy resin compositions of this invention.
(6)さらに、エポキシ硬化物の性質を改善する目的で種々の硬化性モノマ−、オリゴマ−及び合成樹脂を配合することができる。たとえば、脂肪族エポキシ等のエポキシ樹脂用希釈剤、ジオール又はトリオール類、ビニルエーテル類、オキセタン化合物、フッ素樹脂、アクリル樹脂、シリコ−ン樹脂等の1種又は2種以上の組み合わせを挙げることができる。これらの化合物及び樹脂類の配合割合は、本発明のエポキシ樹脂組成物の本来の性質を損なわない範囲の量、すなわち本発明の組成物100質量部に対して、50質量部以下が好ましい。 (6) Furthermore, various curable monomers, oligomers and synthetic resins can be blended for the purpose of improving the properties of the epoxy cured product. For example, one or a combination of two or more of a diluent for epoxy resin such as aliphatic epoxy, diol or triol, vinyl ether, oxetane compound, fluororesin, acrylic resin, and silicone resin can be used. The compounding ratio of these compounds and resins is preferably 50 parts by mass or less with respect to an amount within a range not impairing the original properties of the epoxy resin composition of the present invention, that is, 100 parts by mass of the composition of the present invention.
以下、実施例及び比較例を挙げて本発明をさらに詳しく説明する。なお、例中の部は質量部を意味する。 Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples. In addition, the part in an example means a mass part.
実施例1
水素化エポキシ樹脂としてエピコートYX8000(ジャパンエポキシレジン社商品名;ビスフェノールA型エポキシ樹脂を直接水添したエポキシ樹脂、水素化率約100%、エポキシ当量;205g/当量)80部、トリアジン含有エポキシ樹脂としてTEPIC−S(日産化学工業社商品名;トリグリシジルイソシアヌレート、エポキシ当量;99g/当量)20部、酸無水物硬化剤としてリカシッドMH−700(新日本理化社商品名; 無水メチルヘキサヒドロフタル酸)100部を温度80℃で均一になるまで混合した後、硬化促進剤としてヒシコーリンPX−4ET(日本化学工業社商品名;テトラ−n−ブチルホスホニウムo,o−ジエチルホスホロジチオエート)0.5部を添加し、攪拌、溶解してエポキシ樹脂組成物を得た。この組成物を減圧下で脱泡した後、型の中に流し込み、オーブン中にて100℃で3時間、次いで、140℃で3時間硬化し硬化物を得た。このエポキシ硬化物の物性値を表1に示す。
Example 1
As a hydrogenated epoxy resin, 80 parts of Epicoat YX8000 (trade name of Japan Epoxy Resin Co., Ltd .; epoxy resin directly hydrogenated bisphenol A type epoxy resin, hydrogenation rate of about 100%, epoxy equivalent; 205 g / equivalent), triazine-containing epoxy resin 20 parts TEPIC-S (Nissan Chemical Industries trade name; triglycidyl isocyanurate, epoxy equivalent; 99 g / equivalent), Ricacid MH-700 (New Nippon Rika Co., Ltd. trade name; methyl hexahydrophthalic anhydride as an acid anhydride curing agent) ) After mixing 100 parts at a temperature of 80 ° C. until uniform, Hishicolin PX-4ET (trade name of Nippon Chemical Industry; tetra-n-butylphosphonium o, o-diethyl phosphorodithioate) as a curing accelerator 0. 5 parts were added, stirred and dissolved to obtain an epoxy resin composition . The composition was degassed under reduced pressure, poured into a mold, and cured in an oven at 100 ° C. for 3 hours and then at 140 ° C. for 3 hours to obtain a cured product. The physical property values of this epoxy cured product are shown in Table 1.
実施例2〜5及び比較例1〜2
エポキシ樹脂、酸無水物硬化剤、硬化促進剤及び添加剤を表1に示すように変える以外は、実施例1と同様の操作を行い、エポキシ樹脂組成物を得、硬化物を得た。エポキシ硬化物の物性値を表1に示す。
Examples 2-5 and Comparative Examples 1-2
Except changing the epoxy resin, acid anhydride curing agent, curing accelerator and additives as shown in Table 1, the same operation as in Example 1 was performed to obtain an epoxy resin composition, and a cured product was obtained. The physical properties of the epoxy cured product are shown in Table 1.
表1中、*1〜*16は以下のとおりである。
*1 ;120℃で測定、安田精機社製ゲルタイムテスター
*2 ;TMA法(5℃/分で昇温)
*3 ;メタリイングバーチカルウェザーメーター(スガ試験機社製)を使用し、照射強度 0.4kw/m2ブラックパネル温度 63℃の条件で72時間照射後のYI値(Yellowness Index)
*4 ;150℃ 72時間加熱後のYI値(Yellowness Index)
*5 ;JIS−K−6911
*6 ; 鉄−鉄の引っ張り接着剪断強度(JIS−K−6850)
*7 ;厚さ3mm、直径50mmの円盤状硬化物の121℃、0.21MPa、24時間後の吸湿率
*8 ;水添ビスフェノールA型エポキシ樹脂−WPE 205(ジャパンエポキシレジン社製)
*9 ;水添ビスフェノールA型エポキシ樹脂−WPE 290(ジャパンエポキシレジン社製)
*10;水添ビスフェノールA型エポキシ樹脂−WPE 1,200(ジャパンエポキシレジン社製)
*11;トリグリシジルイソシアヌレート(日産化学工業社製)
*12;3,4−エポキシシクロヘキシルメチル−3’,4’−エポキシシクロヘキサンカルボキシレート(ジャパンエポキシレジン社製)
*13;無水メチルヘキサヒドロフタル酸(新日本理化社製)
*14;テトラ−n−ブチルホスホニュウムo,o−ジエチルホスホロジチオエート(日本化学工業社製)
*15;2−ヒドロキシ−4−メトキシベンゾフェノン
*16;2,6−ジ−t−ブチル−p−クレゾール(BHT)/トリフェニルホスファイト(TPP)
In Table 1, * 1 to * 16 are as follows.
* 1 Measured at 120 ° C, Yasuda Seiki Gel Time Tester
* 2; TMA method (heated at 5 ° C / min)
* 3: YI value (Yellowness Index) after irradiation for 72 hours using a metallizing vertical weather meter (manufactured by Suga Test Instruments Co., Ltd.) under irradiation conditions of 0.4 kw / m 2 black panel temperature of 63 ° C.
* 4: YI value (Yellowness Index) after heating at 150 ° C for 72 hours
* 5; JIS-K-6911
* 6; Tensile bond shear strength of iron-iron (JIS-K-6850)
* 7: Moisture absorption after 24 hours at 121 ° C., 0.21 MPa of a disk-shaped cured product having a thickness of 3 mm and a diameter of 50 mm
* 8: Hydrogenated bisphenol A type epoxy resin-WPE 205 (made by Japan Epoxy Resin Co., Ltd.)
* 9: Hydrogenated bisphenol A type epoxy resin-WPE 290 (made by Japan Epoxy Resin Co., Ltd.)
* 10: Hydrogenated bisphenol A type epoxy resin-WPE 1,200 (made by Japan Epoxy Resin Co., Ltd.)
* 11: Triglycidyl isocyanurate (Nissan Chemical Industries)
* 12; 3,4-epoxycyclohexylmethyl-3 ′, 4′-epoxycyclohexanecarboxylate (manufactured by Japan Epoxy Resin Co., Ltd.)
* 13: Methylhexahydrophthalic anhydride (manufactured by Shin Nippon Rika Co., Ltd.)
* 14; Tetra-n-butylphosphonium o, o-diethyl phosphorodithioate (manufactured by Nippon Chemical Industry Co., Ltd.)
* 15; 2-hydroxy-4-methoxybenzophenone
* 16; 2,6-di-t-butyl-p-cresol (BHT) / triphenyl phosphite (TPP)
表1から明らかなように、本発明の発光素子封止材用エポキシ樹脂組成物は、その硬化物が耐熱性及び密着性優れ、また、耐湿性、耐光性にも優れるため、短波長の光を放出するIII族窒化物系化合物半導体を封止するLED封止材用エポキシ樹脂組成物として特に有用である。 As is clear from Table 1, the epoxy resin composition for a light emitting device sealing material of the present invention has a cured product with excellent heat resistance and adhesion, and excellent moisture resistance and light resistance. It is particularly useful as an epoxy resin composition for an LED encapsulant that encapsulates a group III nitride compound semiconductor that emits.
Claims (8)
(B)成分;酸無水物硬化剤
(C)成分;硬化促進剤
上記(A)成分、(B)成分及び(C)成分を含有して成る発光素子封止材用エポキシ樹脂組成物。 (A) component; 20-95 mass% of hydrogenated epoxy resins whose hydrogenation rate of the aromatic ring obtained by directly hydrogenating an aromatic epoxy resin is 90-100%, 5-80 mass% of triazine ring containing epoxy resins, and Epoxy resin (B) component containing 0-50% by mass of alicyclic epoxy resin obtained by epoxidizing alicyclic olefin; acid anhydride curing agent (C) component; curing accelerator (A) component ( B) The epoxy resin composition for light emitting element sealing materials containing a component and (C) component.
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02187421A (en) * | 1988-08-19 | 1990-07-23 | Haisoole Japan Kk | Ultraviolet ray transmitting protective or supporting material for ultraviolet ray sensitive or transmitting element |
JPH05326756A (en) * | 1992-05-22 | 1993-12-10 | Hitachi Chem Co Ltd | Optical semiconductor sealing epoxy resin composition |
JP2001342240A (en) * | 2000-06-05 | 2001-12-11 | Japan Epoxy Resin Kk | Epoxy resin composition |
JP2002212396A (en) * | 2001-01-17 | 2002-07-31 | Matsushita Electric Works Ltd | Epoxy resin composition for optical semiconductor and optical semiconductor device |
JP2003040972A (en) * | 2001-07-26 | 2003-02-13 | Japan Epoxy Resin Kk | Epoxy resin composition for optical semiconductor and optical semiconductor device |
JP2003073452A (en) * | 2001-09-03 | 2003-03-12 | Stanley Electric Co Ltd | Epoxy resin for ultraviolet light-emitting element and epoxy resin material |
JP2004027001A (en) * | 2002-06-25 | 2004-01-29 | Matsushita Electric Works Ltd | Epoxy resin composition for sealing optical semiconductor and optical semiconductor device |
-
2004
- 2004-04-20 JP JP2004123797A patent/JP2005306952A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02187421A (en) * | 1988-08-19 | 1990-07-23 | Haisoole Japan Kk | Ultraviolet ray transmitting protective or supporting material for ultraviolet ray sensitive or transmitting element |
JPH05326756A (en) * | 1992-05-22 | 1993-12-10 | Hitachi Chem Co Ltd | Optical semiconductor sealing epoxy resin composition |
JP2001342240A (en) * | 2000-06-05 | 2001-12-11 | Japan Epoxy Resin Kk | Epoxy resin composition |
JP2002212396A (en) * | 2001-01-17 | 2002-07-31 | Matsushita Electric Works Ltd | Epoxy resin composition for optical semiconductor and optical semiconductor device |
JP2003040972A (en) * | 2001-07-26 | 2003-02-13 | Japan Epoxy Resin Kk | Epoxy resin composition for optical semiconductor and optical semiconductor device |
JP2003073452A (en) * | 2001-09-03 | 2003-03-12 | Stanley Electric Co Ltd | Epoxy resin for ultraviolet light-emitting element and epoxy resin material |
JP2004027001A (en) * | 2002-06-25 | 2004-01-29 | Matsushita Electric Works Ltd | Epoxy resin composition for sealing optical semiconductor and optical semiconductor device |
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