JP2005205511A - Sacrificial film etching method and its device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an etching technology for forming a constituent body of a MEMS device by dry-etching a sacrificial film. <P>SOLUTION: An MEMS base material W is constituted via a step of forming the sacrificial film of a silicon substrate, a step of patterning the sacrificial film, a step of laminating a film forming the constituent body of the MEMS device on the patterned sacrificial film, and a step of patterning the film forming the constituent body of the MEMS device. The base material is held at the predetermined temperature in a range of the ordinary temperature to 300 °C in an etching processing chamber 1, and dry-etches the sacrificial film by being exposed to HF vapor in a state of being held under predetermined reduced pressure in a range of 1 Kpa to 15 Kpa. Thus, etching can be performed under an uncondensing condition, and the sacrificial film can be etched without causing a sticking phenomenon generated in a wet etching method. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

The present invention relates to a method and an apparatus for etching a sacrificial film, and more particularly, as a sacrificial film on a MEMS substrate when a MEMS (Micro Electro Mechanical System) device is formed particularly by applying a semiconductor integrated circuit manufacturing technique. The present invention relates to an etching technique optimal for dry etching an intervening oxide film.

2. Description of the Related Art Semiconductor integrated circuit manufacturing technology Utilizing so-called semiconductor manufacturing technology, MEMS devices such as acceleration sensors used in automobile airbags, attitude control gyro sensors, and print heads of ink jet printers have been put into practical use.

A general schematic configuration of a MEMS device is shown in FIG. Specifically, this MEMS device includes a silicon substrate 10 made of a single crystal silicon substrate or the like, anchors 30a and 30a fixed on the silicon substrate 10, and a cross beam projecting horizontally from the anchors 30a and 30a. The cross beam 30b, 30b is configured to swing vertically by an electric driving force applied to an electrode (not shown).

In manufacturing these MEMS devices, a thin film forming technique and a lithography technique, which are semiconductor manufacturing techniques, are used, and a general manufacturing method thereof is shown in FIG. 4 (see Patent Document 1).

(1) An oxide film 20 made of SiO ₂ is formed as a sacrificial film on the entire surface of the silicon substrate 10 (FIG. 4A).

(2) The oxide film 20 is patterned to form openings 20a and the like (FIG. 4B).

(3) A polysilicon film 30 is formed on the entire surface of the patterned oxide film 20. Thereby, the polysilicon film 30a is deposited on the silicon substrate 10 through the opening 20a of the oxide film 20, and this becomes an anchor portion of the MEMS device (FIG. 4C).

(4) The polysilicon film 30 is patterned to form cross beams 30b, 30b, etc. (FIG. 4D).

(5) The oxide film 20 which is a sacrificial film is etched with an etchant. Thereby, the anchors 30a and 30a and the cross beams 30b and 30b extending in the horizontal direction from the upper portions of the anchors 30a and 30a are formed on the silicon substrate 10 (FIG. 4E).

By the way, since the detailed dimension in the MEMS device, for example, the distance dimension B between the silicon substrate 10 and the cross beams 30a and 30a is extremely small with a minimum dimension of about 10 nm to 50 nm, the minimum in the etching step (5). Due to the influence of the surface tension due to the gap, the etching solution cannot reach the details of the MEMS device, and etching unevenness occurs in the oxide film (sacrificial film).

In this regard, dry etching using an etching gas is being adopted instead of wet etching using an etching solution as described above. However, in this method, water is generated by the condensing of the etching gas. Due to the capillary phenomenon and the surface tension, the cross beams 30a and 30a are sticking as shown in FIG.

That is, referring to FIG. 5, when water 40 is present in the minimal gap between the silicon substrate 10 and the cross beams 30a, 30a, the water 40 moves in the horizontal direction of the minimal gap as indicated by the arrow due to capillary action. The cross beams 30a and 30a are bent toward the surface of the silicon substrate 10 by the surface tension generated at that time, as shown by broken lines, and in contact with the surface of the silicon substrate 10 in the worst case. End up.

Further, a substrate in which a SiN film (silicon nitride film) is further formed on the upper surface of the silicon substrate 10 may be used as the MEMS base material. When such a substrate is dry-etched, the SiN film is etched. An etching reaction product is generated by reacting with the gas, which remains on the substrate as a residue, and has an adverse effect such as insulation failure.
JP 2003-191199 A

The present invention has been made in view of such conventional problems, and its main purpose is to employ a dry etching technique suitable for microfabrication and to etch a sacrificial film on a MEMS substrate without causing sticking. An object of the present invention is to provide an etching technique that can perform the above-described process.

Another object of the present invention is to provide an etching technique capable of etching a sacrificial film on a MEMS substrate without leaving a residue as an etching reaction product when performing dry etching.

  In order to achieve the above object, the sacrificial film etching method of the present invention provides a MEMS substrate on which a sacrificial film is formed at a predetermined temperature within a range of room temperature to 300 ° C. and a predetermined range of 1 Kpa to 15 Kpa. The sacrificial film is dry-etched by being exposed to HF vapor while being kept under reduced pressure.

  That is, as a result of various test studies, the present inventor appropriately controlled the environmental conditions of the etching process, particularly the temperature and pressure under the above conditions, in accordance with the dimensional conditions of the MEMS device. It succeeded in eliminating the shortcomings.

As a preferred embodiment, an oxide film made of SiO ₂ is used as the sacrificial film. Further, pure water vapor or IPA vapor is added as an auxiliary to the HF vapor. More preferably, the dry-etched MEMS substrate is reheated at a predetermined temperature of 400 ° C. or lower.

  Further, as the MEMS base material, a step of forming a sacrificial film on a silicon substrate, a step of patterning the sacrificial film, a step of laminating a film that constitutes a MEMS device on the patterned sacrificial film, and the MEMS A base material configured through a step of patterning a film that forms a device structure is preferably used.

  Furthermore, a sacrificial film etching apparatus according to the present invention is an apparatus for carrying out the above-described etching method, and includes an etching processing chamber capable of accommodating a MEMS substrate on which the sacrificial film is formed in an airtight state, and the etching processing chamber. A heating table for mounting and heating the MEMS substrate, a decompression unit for reducing the pressure in the etching chamber, and an etching gas sprayed toward the sacrificial film on the MEMS substrate. An etching gas supply means, and the pressure reducing means keeps the etching processing chamber at a predetermined reduced pressure within a range of 1 Kpa to 15 Kpa, and the MEMS base allows the MEMS substrate to be kept at a room temperature to 300 It is configured to be held at a predetermined temperature within a range of ° C.

  The etching chamber is set to only one chamber, and a low temperature processing chamber for dry etching the sacrificial film on the MEMS substrate at a low temperature, and a dry etching of the sacrificial film on the MEMS substrate at a high temperature. It may be a multi-type including a high temperature processing chamber for processing and a high temperature reheating chamber for reheating the MEMS substrate at a high temperature.

  According to the present invention, when dry-etching the sacrificial film, the MEMS substrate on which the sacrificial film is formed is subjected to a predetermined temperature within a range of room temperature to 300 ° C. and a predetermined reduced pressure within a range of 1 Kpa to 15 Kpa. In this state, exposure to HF vapor effectively prevents condensing, and the sacrificial film can be reliably removed without causing sticking.

  Further, by reheating the dry-etched MEMS substrate at a predetermined temperature of 400 ° C. or lower, the residue generated by the etching reaction can be surely sublimated and removed.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

Embodiment 1
An etching apparatus according to the present invention is shown in FIG. 1, and this etching apparatus is for dry etching a sacrificial film on a MEMS substrate W. And an etching gas supply device (etching gas supply means) 4 as a main part.

  The etching processing chamber 1 is a processing chamber that has a structure capable of accommodating the MEMS substrate W on which the sacrificial film is formed in an airtight state, and performs dry etching of the MEMS substrate W under a predetermined pressure and a predetermined temperature. . The etching chamber 1 is provided with a completely sealed gate 1a, and the MEMS substrate W is carried into and out of the etching chamber 1 through the gate 1a by a transfer robot (not shown). Further, the entire outer periphery of the etching chamber 1 is heated by a heating means 1b such as a heating jacket and is maintained at a constant temperature.

  The heating table 2 is provided in the etching processing chamber 1 to place and heat the MEMS substrate W carried by the transfer robot. The heating table 2 is provided with a heating means (not shown) in the lower part thereof in order to heat and maintain the MEMS substrate W at an arbitrary set temperature of room temperature to 300 ° C. Specifically, a water jacket, a sheathed heater, a heating lamp, or the like is preferably used as the heating means depending on the heating temperature.

  The decompression device 3 makes the inside of the etching processing chamber 1 in a decompressed state. One end of an exhaust pipe 3a is connected to the etching processing chamber 1 and a decompression unit such as a vacuum pump is connected to the other end of the exhaust pipe 3a. A pump 3b is connected. The gas in the etching process chamber 1 is exhausted and depressurized to a predetermined pressure by the depressurization pump 3b of the depressurization device 3 (in this embodiment, depressurization within the range of 1 Kpa to 15 Kpa).

  Further, the outer circumference of the exhaust pipe 3b is heated by a heating means 3c such as a tape heater and maintained at a constant temperature, thereby effectively preventing the temperature drop in the etching process chamber 1 and the temperature of the etching process chamber 1 being reduced. Control is easy and reliable.

  The etching gas supply device 4 sprays and supplies an etching gas toward the sacrificial film on the MEMS substrate W on the heating table 2, and a spray nozzle 4 a is placed on the heating table 2 at an upper position in the etching processing chamber 1. The injection nozzle 4a is communicated with a gas box 4c, which is a gas supply source, via a pipe 4b.

  The gas box 4c heats HF gas, IPA gas and N2 gas sent from a plurality of gas cylinders (not shown), and pure water vapor sent from a pure water vapor generator (not shown) at a high temperature (100 ° C. in this embodiment). And a switching valve, a mass flow controller, etc. (not shown) are provided, and these gases are supplied individually or appropriately mixed and supplied to the etching processing chamber 1.

  The injection nozzle 4a supplies an etching gas sent from the gas box 4c through the intake pipe 4b, that is, HF vapor, or a gas obtained by mixing HF vapor with IPA vapor or pure water vapor on the heating table 2. It sprays and supplies to the MEMS base material W surface.

  Note that the gas box 4c is entirely covered with heating means 4d such as a heating jacket in order to maintain a high temperature (100 ° C.), and each gas line in the gas box 4c and the etching process chamber 1 are covered. Is also kept at a high temperature (100 ° C.) by heating means 4e such as a tape heater. Thereby, the etching gas supplied from the gas box 4c to the injection nozzle 4a is always kept in a gas phase state.

  Therefore, the method for etching the sacrificial film of the MEMS substrate W using the etching apparatus configured as described above is performed through the following steps.

A. Preparation of MEMS substrate:
In the preparation of the MEMS substrate W, the same manufacturing process as the conventional one is taken as follows (see FIG. 4).

(1) Step of forming a sacrificial film:
An oxide film 20 made of SiO ₂ is formed as a sacrificial film on the entire surface of the silicon substrate 10 (FIG. 4A).

(2) Patterning the sacrificial film:
The oxide film 20 is patterned to form openings 20a and the like (FIG. 4B).

(3) A step of laminating a film to be a component of the MEMS device on the patterned sacrificial film:
A polysilicon film 30 is formed on the entire surface of the patterned oxide film 20. Thereby, the polysilicon film 30a is deposited on the silicon substrate 10 through the opening 20a of the oxide film 20, and this becomes an anchor portion of the MEMS device (FIG. 4C).

(4) A step of patterning a film that constitutes the structure of the MEMS device:
The polysilicon film 30 is patterned to form cross beams 30b, 30b and the like to form a MEMS substrate W (FIG. 4D).

As shown in the figure, the MEMS base material W thus prepared includes a single crystal silicon substrate 10 as a base, anchors 30a and 30a made of a polysilicon film, and cross beams 30b and 30b also made of a polysilicon film. , An oxide film (sacrificial film) 20 made of SiO ₂ , and the dimensions of the main part thereof are set such that the A dimension is 3,000 nm, the B dimension is 15 nm, and the C dimension is 100 nm.

B. Etching a sacrificial film on a MEMS substrate:
Etching of the sacrificial film 20 on the MEMS substrate W is performed with HF vapor in a state where the sacrificial film 20 is held at a predetermined temperature within a range of room temperature to 300 ° C. and under a predetermined reduced pressure within a range of 1 Kpa to 15 Kpa. The sacrificial film 20 is subjected to dry etching by exposure to the above, and specifically, is performed by the following steps using the etching apparatus shown in FIG.

(1) Temperature setting of the etching chamber 1:
The etching chamber 1 is heated to about 100 ° C. by heating means 1b such as a heating jacket, the gas box 4c is heated by heating means 7B such as a heating jacket, and the pipe 4b is heated by heating means 4e such as a tape heater. While being maintained, the exhaust pipe 3a is heated by the heating means 3c such as a tape heater and maintained at about 50 ° C.

  In the etching chamber 1, the heating table 2 is heated and maintained at about 150 ° C., for example.

(2) Loading of the MEMS substrate W:
The gate 5 of the etching chamber 1 is opened, and the MEMS substrate W prepared as described above is seated (loaded) on the heating table 2 by a transfer robot (not shown). After the seating, the transfer robot is separated from the etching process chamber 1, and the gate 5 is closed to seal the etching process chamber 1 and put it in an airtight state.

  The MEMS substrate W seated on the heating table 2 is heated to about 150 ° C., which is the same as that of the heating table 2, and is held at this temperature.

(3) Pressure setting in the etching chamber 1:
The inside of the etching process chamber 1 is maintained by the decompression device 3 under a predetermined decompression within the above range. Specifically, the decompression pump 3b is driven, and the etching process chamber 1 is swept and exhausted through the exhaust pipe 3a. This evacuation operation is continued until the pressure in the etching chamber 1 reaches, for example, 12 Kpa.

(4) Dry etching:
A mixed gas obtained by adding IPA vapor as an auxiliary agent to HF vapor is supplied from the gas box 4c to the injection nozzle 4a through the pipe 4b, and is injected from the injection nozzle 4a into the etching chamber 1 to be filled. . In this case, the volume ratio of HF vapor to IPA vapor in the mixed gas is set to 2/1. Moreover, as said mixed gas, you may add a pure water vapor as an adjuvant to HF vapor.

  By holding the MEMS substrate W for 60 minutes under the above conditions, the sacrificial film 20 is exposed to a mixed gas of HF vapor and dry etched. As a result, as shown in FIG. 4E, the MEMS device in which the anchors 30a and 30a and the cross beams 30b and 30b extending in the horizontal direction from the upper portions of the anchors 30a and 30a are formed on the silicon substrate 10 is formed. Complete.

(5) Unloading of MEMS substrate W:
The decompression pump 3b of the decompression device 3 is stopped, the gate 1a is opened, and the MEMS substrate W is again separated from the heating table 2 by a transfer robot (not shown) and taken out of the etching chamber 1 ( Unloading).

  When the MEMS device manufactured by the above manufacturing process was observed, the stacking phenomenon of the cross beams 30b and 30b was not observed, and the sacrificial film 20 was etched in a horizontal state.

  Etching conditions, that is, the atmospheric pressure (decompression degree) and temperature in the etching processing chamber 1 and the heating temperature of the table T are set to optimum values depending on the constituent dimensions of the MEMS substrate W, for example, the above-described A dimension, B dimension, C dimension, Is set.

  When SiN film (silicon nitride film) is adopted as the material of the anchors 30a, 30a and the cross beams 30b, 30b, in addition to the dry etching process, the etching is performed by reheating at a high temperature of 400 ° C. or lower. Residues produced by the reaction can be removed.

Embodiment 2
A multi-type etching apparatus according to the present invention is shown in FIG. 2, and this etching apparatus includes a low-temperature processing chamber 101 for dry-etching a sacrificial film on a MEMS substrate at a low temperature of normal temperature to 100 ° C., and 100 ° C. to 300 ° C. A high-temperature processing chamber 102 for dry etching the sacrificial film on the MEMS substrate at a high temperature of ℃, and a high-temperature reheating chamber 103 for reheating the MEMS substrate at a high temperature of MAX 400 ℃, The distribution chamber 104 for distributing the MEMS substrate W to the three processing chambers, the front chamber 105 for receiving the MEMS substrate formed in the previous step, and the etching for supplying an etching gas or the like to the three processing chambers A gas supply device 106 is provided as a main part.

  The basic structure of the low temperature processing chamber 101, the high temperature processing chamber 102, and the high temperature reheating chamber 103 is the same as that of the etching processing chamber 1 shown in the first embodiment. That is, each processing chamber is connected to a decompression device (not shown) and maintained at a predetermined reduced pressure, and is connected to an etching gas supply device 106 to supply an etching gas to an injection nozzle (not shown) in the processing chamber. The

  Each processing chamber is provided with a heating table and heating means (not shown) suitable for each processing temperature. As this heating means, a water jacket type heater is suitably used for the low temperature processing chamber 101 used at a low temperature of room temperature to 100 ° C., and a high temperature processing chamber used at a high temperature of 100 ° C. to 300 ° C. A sheathed heater is suitably used for 102, and a lamp heater is suitably used for the high-temperature reheating chamber 103 used at a high temperature of MAX 400 ° C.

  The sorting chamber 104 is disposed in the middle of the apparatus so as to contact the three processing chambers 101, 102, 103 and the front chamber 105, and a transfer robot R is installed in the center of the chamber.

  The transfer robot R receives the MEMS base material W that has arrived on the table 105b of the front chamber 105 from the previous process via the gate valve 105a existing inside the front chamber 105 (the distribution chamber side), and passes through the gate valve 101a. The low-temperature processing chamber 101 is transferred to the high-temperature processing chamber 102 via the gate valve 102a for etching, or the MEMS substrate W after the etching processing is transferred to the high-temperature reheating chamber 103 via the gate valve 103a.

  In addition, although illustration is omitted, the structure in which the outside of each processing chamber is heated to a high temperature by a heat jacket or the like, or the piping part is heated to a high temperature by a tape heater or the like is the same as in the first embodiment. Formed.

  Therefore, the etching of the sacrificial film on the MEMS substrate W using the etching apparatus configured as described above is performed through the following steps. In addition, regarding the preparation process of the MEMS base material W, it is the same as Embodiment 1, and description is abbreviate | omitted.

(1) Device temperature setting:
The low temperature processing chamber 101, the high temperature processing chamber 102, and the high temperature reheating chamber 103 are each heated by heating means such as a heating jacket (not shown), the gas box 105 is heated by heating means such as a heating jacket (not shown), and each pipe. The portions (not shown) are each heated by a heating means such as a tape heater (not shown) and maintained at about 100 ° C., and the exhaust pipe (not shown) is heated by a heating means such as a tape heater (not shown). And maintained at about 50 ° C.

  In addition, the heating table 101b in the low temperature processing chamber 101 is heated and maintained at a predetermined temperature in the range of room temperature to 100 ° C., for example, 80 ° C., and the heating table 102b in the high temperature processing chamber 102 is heated to 100 ° C. to 300 ° C. The heating table 103b in the high temperature reheating chamber 103 is heated and maintained at a predetermined temperature of 400 ° C. or lower, for example, 300 ° C.

(2) Loading of the MEMS substrate W:
The MEMS base material W that reaches the table 105b of the front chamber 105 from the previous process is carried into either the low temperature processing chamber 101 or the high temperature processing chamber 102 by the transfer robot R. It is determined in advance according to the general configuration dimensions and the like.

  For example, when the physical component dimensions of the MEMS substrate W are suitable for etching at a high temperature of 200 ° C., the gate valve 102a of the high temperature processing chamber 102 is opened, and the MEMS substrate W is transferred to the transfer robot. It is carried in by R and seated on the heating table 102b. After the seating, the transfer robot R is separated from the high temperature processing chamber 102, and the gate 102a is closed, and the high temperature processing chamber 102 is sealed and placed in an airtight state.

  The MEMS substrate W seated on the heating table 102b of the high temperature processing chamber 102 is heated to about 200 ° C., which is the same as the heating table 102b, and held at this temperature.

(3) Processing chamber pressure setting:
Since the pressure setting process in the high temperature processing chamber 102 is the same as that in the first embodiment, the description thereof is omitted.

(4) Dry etching:
Since the dry etching process is the same as that of the first embodiment, the description thereof is omitted.

(5) Reheating the MEMS substrate W:
If a SiN film (silicon nitride film) is adopted as the material of the MEMS base material, for example, the anchors 30a and 30a and the cross beams 30b and 30b in FIG. By reheating at a high temperature of less than or equal to ° C., residues generated by the etching reaction can be removed.

  That is, when the dry etching process is completed in the high temperature processing chamber 102, the gate valve 102a is opened, the gate valve 103a of the high temperature reheating chamber 103 is opened, and the MEMS robot W is heated by the transfer robot R to the heating table of the high temperature processing chamber 102. After being separated from 102b, it is seated on the heating table 103b of the high temperature processing chamber 103, and reheated to 300 ° C. which is the same as the heating table temperature.

(6) Unloading of the MEMS substrate W:
After the gate valve 103a of the high temperature reheating chamber 103 is opened and the MEMS substrate W is separated from the heating table 103b by the transfer robot R in the sorting chamber 104 and taken out from the high temperature reheating chamber 103, the front chamber The gate valve 105a of 105 is opened and is seated on the table 105b of the front chamber 105, and waiting for transfer to the next process.

  Note that the above-described embodiment is merely a preferred embodiment of the present invention, and the present invention is not limited to this, and various design changes can be made within the scope thereof.

  For example, the heating table is a fixed type in this embodiment, but may be a rotating turntable type.

  The present invention can be used for dry etching of a semiconductor substrate before CVD.

It is a schematic block diagram which shows the apparatus which etches the sacrificial film on the MEMS substrate which is Embodiment 1 which concerns on this invention. It is a schematic block diagram which shows the apparatus which etches the sacrificial film on the MEMS substrate which is Embodiment 2 which concerns on this invention. It is a perspective view showing an example of a MEMS device formed from the MEMS substrate. It is explanatory drawing which shows an example of the manufacturing process of the MEMS device. It is explanatory drawing which shows the sticking generation | occurrence | production state of the MEMS device.

Explanation of symbols

W MEMS substrate 1 Etching chamber 1a Gate valve 2 Heating table 3 Pressure reducing device (pressure reducing means)
3b Pressure reducing pump 4 Etching gas supply device (etching gas supply means)
4a injection nozzle 4c gas box 4b piping 5 gate 10 single crystal silicon substrate 20 sacrificial film (SiO2 film)
30 Polysilicon film (or silicon nitride film)
30a Anchor 30b Cross beam 1b Heating jacket (heating means)
3c Heating jacket (heating means)
4d Tape heater (heating means)
4d Tape heater (heating means)
4e Tape heater 101 Low temperature processing chamber (etching chamber)
102 High temperature processing chamber (etching chamber)
103 High temperature reheating chamber
101a-103a Gate valve 105a Gate valve
101b to 103b Heating table 104 Sorting chamber 105 Front chamber 106 Etching gas supply device (etching gas supply means)

Claims (8)

A method of etching a sacrificial film when forming a MEMS device,
By exposing the MEMS substrate on which the sacrificial film is formed to HF vapor in a state of being held at a predetermined temperature within a range of normal temperature to 300 ° C. and a predetermined reduced pressure within a range of 1 Kpa to 15 Kpa, A method for etching a sacrificial film, comprising dry etching the film. The sacrificial film etching method according to claim 1, wherein the sacrificial film is an oxide film made of SiO ₂ . 3. The method for etching a sacrificial film according to claim 1, wherein pure water vapor is added as an auxiliary agent for the HF vapor. 3. The method for etching a sacrificial film according to claim 1, wherein IPA vapor is added as an auxiliary agent for the HF vapor. The sacrificial film etching method according to any one of claims 1 to 4, wherein the dry-etched MEMS base material is reheated at a predetermined temperature of 400 ° C or lower. A step of forming a sacrificial film on the silicon substrate, patterning the sacrificial film, stacking a film constituting the structure of the MEMS device on the patterned sacrificial film, 6. The method for etching a sacrificial film according to claim 1, wherein the sacrificial film is etched through a step of patterning a film as a constituent body. An apparatus for etching a sacrificial film when forming a MEMS device,
An etching chamber capable of accommodating the MEMS substrate on which the sacrificial film is formed in an airtight state;
A heating table that is provided in the etching chamber and that heats the MEMS substrate;
Pressure reducing means for reducing the pressure in the etching chamber;
Etching gas supply means for supplying an etching gas to the sacrificial film on the MEMS substrate;
The etching process chamber is maintained at a predetermined reduced pressure within a range of 1 Kpa to 15 Kpa by the pressure reducing means, and the MEMS base is brought to a predetermined temperature within a range of room temperature to 300 ° C. by the heating table. An apparatus for etching a sacrificial film, characterized in that the sacrificial film is held. The etching chamber includes a low temperature processing chamber for dry etching the sacrificial film of the MEMS substrate at a low temperature, a high temperature processing chamber for dry etching the sacrificial film on the MEMS substrate at a high temperature, and a high temperature The sacrificial film etching apparatus according to claim 7, wherein the sacrificial film etching apparatus is a multi-type including a high-temperature reheating chamber for reheating the MEMS base material.

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