JP2004217956A - Substrate treatment apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To realize a supply of a purge gas to the circumference of a substrate with a simpler configuration. <P>SOLUTION: The substrate treatment apparatus is provided with a treatment chamber 1 for treating a wafer W therein with the use of a raw gas, a substrate support 2 for supporting the wafer W in the treatment chamber 1, a purge gas duct 4 for supplying the purge gas to the circumference of the wafer W supported by the substrate support 2, which has a purge gas supply port 3 of an outlet. The apparatus has further a cover member 5 which surrounds the substrate support 2 to form a buffer space S of the purge gas between itself and the substrate support 2, and composes the purge gas duct 4 so as to include the buffer space S. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a substrate processing apparatus used for performing a method for manufacturing a semiconductor device.
[0002]
[Prior art]
When a thin film is formed on a wafer by a CVD method or the like in the manufacture of a semiconductor device such as a DRAM, in some processes, it is necessary to prevent film formation on the back surface, peripheral portion, or the like of the wafer. For example, when the film adhered to the back surface or peripheral portion of the wafer is treated as a contaminant in another process, or when the adhered film is easily peeled off at the peripheral portion of the wafer depending on the film material, which causes particles. is there.
As a solution to this problem, there is known a technique of forming a film while flowing a purge gas to a peripheral portion of a wafer (see Patent Document 1). In this case, the flow of the purge gas prevents the film-forming gas from reaching the peripheral portion of the wafer or the like, so that film formation at that portion can be prevented.
[0003]
[Patent Document 1]
JP-A-10-41253 (pages 3-7, FIG. 3)
[0004]
[Problems to be solved by the invention]
However, in order to be able to perform the above-described technique, it is necessary to separately provide a flow path for a purge gas in the apparatus, and thus there is a problem that the configuration of the apparatus is likely to be complicated. For example, in the above-mentioned Patent Document 1, since the flow path of the purge gas is formed inside the ぺ distal in which the heater is embedded, not only the configuration of the ぺ distal itself becomes extremely complicated, but also such a It is difficult to accurately form the flow path inside the pedestal, resulting in high cost. Further, a pedestal having a complicated configuration in which a heater is embedded and a purge gas flow path is formed therein is not easy to maintain.
[0005]
Therefore, an object of the present invention is to enable supply of a purge gas to the outer peripheral portion of a substrate with a simpler configuration.
[0006]
[Means for Solving the Problems]
According to the first aspect of the present invention, a processing chamber in which a substrate is processed using a processing gas, a substrate supporting member that supports the substrate in the processing chamber, and an outer periphery of the substrate supported by the substrate supporting member And a purge gas flow path having a purge gas supply port for supplying a purge gas to the section, and a cover member constituting a buffer space between the substrate support member and the substrate support member by surrounding the substrate support member. And a substrate processing apparatus, wherein the purge gas flow path includes the buffer space.
[0007]
According to a second aspect of the present invention, a processing chamber for processing a substrate, a processing gas supply port for supplying a processing gas into the processing chamber, an exhaust port for exhausting the processing chamber, A substrate support member for supporting, a cover member constituting a buffer space between the substrate support member, a purge gas introduction port for introducing a purge gas into the buffer space, and a communication with the buffer space, from the outer peripheral portion of the substrate. And a purge gas supply port for supplying a purge gas into the processing chamber.
[0008]
Here, a gas that contributes to film formation can be used as the processing gas. Specifically, as a processing gas, a raw material gas for forming a film of ruthenium (Ru) or Ru oxide, Ta ₂ O ₅ Source gas for film formation, or ZrO ₂ Can be used.
[0009]
Here, as the purge gas, a gas that does not contribute to film formation (a so-called non-film formation gas) can be used. Specifically, an inert gas such as a nitrogen gas or an argon gas can be used as the purge gas.
[0010]
Here, the outer peripheral portion of the substrate refers to a portion of the substrate where film formation is desired to be avoided. Specifically, as shown in FIG. 4, the outer peripheral portion of the substrate refers to the peripheral portion 50 on the surface (the surface to be processed) of the substrate or the end surface 60 of the substrate (as shown in FIG. In the case of chamfering, the surface is included), or the peripheral portion 70 on the back surface of the substrate, or a region obtained by combining all or a part thereof. The substrate may be circular or square in plan view.
[0011]
According to a third aspect of the present invention, there is provided the substrate processing apparatus according to the first or second aspect, further comprising a heating unit disposed in the buffer space and heating the substrate. . Here, it is preferable that the heating means is provided on the substrate support member.
[0012]
According to a fourth aspect of the present invention, in the first to third aspects, the substrate support member has a support plate on which the substrate is placed, and the purge gas supply port is provided outside the support plate. A substrate processing apparatus characterized by being formed is provided.
[0013]
According to a fifth aspect of the present invention, in any of the first to fourth aspects, a support plate on which the substrate is mounted is provided on the substrate support member, and the support plate is provided on the cover member. A substrate processing apparatus is provided, wherein a surrounding member is provided over the entire circumference, and a gap is secured between the support plate and the surrounding member, and the gap forms the purge gas supply port. Is done.
[0014]
According to a sixth aspect of the present invention, in the first to third aspects, the substrate support member is provided with a support plate on which the substrate is mounted, and the cover member is provided with the support plate. A substrate processing apparatus is provided, wherein a surrounding member surrounding the periphery is provided, and a through hole communicating with the buffer space is formed in the surrounding member, and the through hole forms the purge gas supply port. Is done.
[0015]
According to a seventh aspect of the present invention, there is provided the substrate processing apparatus according to the fourth to sixth aspects, wherein the support plate is smaller than the substrate in plan view.
According to a specific aspect, the support plate and the substrate are both formed in a circular shape in plan view, and the outer diameter of the support plate is smaller than the outer diameter of the substrate. Is provided.
[0016]
According to an eighth aspect of the present invention, there is provided a substrate supporting step of supporting a substrate by a substrate supporting member, and a substrate processing step of supplying a processing gas to the supported substrate to process the substrate. In the method for manufacturing a semiconductor device, wherein the processing step includes a purge gas supply step of supplying a purge gas to an outer peripheral portion of the supported substrate, in the purge gas supply step, the substrate support member and a cover member surrounding the substrate support member A method for manufacturing a semiconductor device is provided, wherein a purge gas is supplied to an outer peripheral portion of the substrate via a configured buffer space.
[0017]
According to a ninth aspect of the present invention, in the eighth aspect, the substrate processing step further includes a heating step of heating the substrate using a heating unit disposed in the buffer space. A method for manufacturing a semiconductor device is provided.
[0018]
According to a tenth aspect of the present invention, in the eighth or ninth aspect, in the substrate supporting step, the substrate is placed on a support plate provided on the substrate supporting member, and in the purge gas supplying step, A method for manufacturing a semiconductor device is provided, wherein the purge gas is supplied from a purge gas supply port formed outside the support plate.
[0019]
According to an eleventh aspect of the present invention, in the eighth to tenth aspects, in the substrate supporting step, the substrate is placed on a support plate provided on the substrate supporting member, and in the purge gas supplying step, A method for manufacturing a semiconductor device, comprising: providing a purge gas from a purge gas supply port using a gap secured between a support plate and a surrounding member surrounding the support plate over the entire circumference as the purge gas supply port. Is done.
[0020]
According to a twelfth aspect of the present invention, in the eighth or ninth aspect, in the substrate supporting step, the substrate is placed on a support plate provided on the substrate supporting member, and in the purge gas supplying step, A method of manufacturing a semiconductor device is provided, wherein a purge gas is supplied from the purge gas supply port using a through-hole formed in a surrounding member surrounding the support plate over the entire circumference and communicating with the buffer space as a purge gas supply port. You.
[0021]
According to a thirteenth aspect of the present invention, in the tenth to twelfth aspects, by using, as the support plate, a substrate smaller than the substrate in plan view, in the substrate supporting step, a peripheral portion of the back surface of the substrate is provided. Is provided so that the substrate is exposed to the buffer space, and in the purge gas supplying step, a purge gas is supplied to at least a peripheral portion of the exposed back surface of the substrate.
[0022]
[Action]
A buffer space is formed between the substrate support member and the cover member, and a purge gas flow path is formed including the buffer space. Therefore, it is not necessary to form a purge gas flow path inside the substrate support member. This can simplify the structure of the substrate support member itself and thus the entire structure of the substrate processing apparatus. Further, since the purge gas is supplied through the buffer space, the flow rate of the supplied purge gas is always stabilized, and the purge gas can be supplied uniformly to the outer peripheral portion of the substrate. This makes it possible to more reliably and accurately avoid processing (for example, film formation) using the processing gas only in the outer peripheral portion of the substrate. When the purge gas is supplied to the peripheral portion on the back surface of the substrate, the processing of that portion can also be reliably avoided.
[0023]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 1 shows a substrate processing apparatus according to an embodiment. This apparatus is a cold wall type single-wafer CVD apparatus used in a process of depositing a ruthenium film or a ruthenium oxide film on a wafer W made of silicon and having a circular shape in a plan view in manufacturing a DRAM or the like. This apparatus includes a processing chamber 1 in which a processing of a wafer W is performed using a processing gas, a substrate supporting member 2 for supporting the wafer W in the processing chamber 1, and a wafer W supported by the substrate supporting member 2. And a purge gas flow path 4 having a purge gas supply port 3 for supplying a purge gas to the outer peripheral portion as an outlet.
The apparatus further includes a cover member 5 surrounding the substrate support member 2 to form a purge gas buffer space S between the substrate support member 2 and the purge gas flow path 4 including the buffer space S. The biggest feature is its structure.
[0024]
A processing gas supply port 6 for supplying a processing gas into the processing chamber 1 is formed in the processing chamber 1. From the processing gas supply port 6, Ru (EtCp) ₂ An Ru gas obtained by vaporizing a Ru liquid material such as (bisethylcyclopentadienyl ruthenium) and an oxygen gas are supplied.
Specifically, a processing gas supply pipe 7 is connected to the processing gas supply port 6, and the processing gas supply pipe 7 is branched into two branches toward the upstream. One of the branched pipes 7a communicates with an oxygen gas supply source (not shown) via an oxygen flow control means 8, and the other pipe 7b passes through a vaporizer 9 and a Ru liquid raw material flow control means 10 in this order. Then, it is connected to a Ru liquid source supply source (not shown).
[0025]
The processing chamber 1 has an exhaust port 11 for exhausting the inside of the processing chamber 1. The exhaust port 11 is connected to an exhaust pipe 12 leading to a vacuum pump or the like (not shown). A pressure control unit 13 is provided in the exhaust pipe 12, and the pressure in the processing chamber 1 can be adjusted by the pressure control unit 13. In addition, the pressure control means 13 can be comprised using a variable valve etc., for example.
[0026]
Further, a gate valve 14 is provided in the processing chamber 1. An unprocessed wafer W is loaded into the processing chamber 1 through the gate valve 14, or a processed wafer W is unloaded from the processing chamber 1. . A transfer robot (not shown) can be used for loading and unloading the wafer W.
[0027]
The substrate support member 2 includes a susceptor 15 on which the wafer W is placed, a heater block main body 16 supporting the susceptor 15, and a shaft extending vertically downward from the heater block main body 16 to the outside of the processing chamber 1. 17.
In the present embodiment, susceptor 15 has substantially the same size as wafer W in plan view. The heater block body 16 includes therein a heater 18 for heating the wafer W to a predetermined film forming temperature. The heating temperature of the heater 18 is controlled to a desired value by a temperature control unit 19 disposed outside the processing chamber 1. The shaft 17 penetrates the bottom surface of the processing chamber 1 through a predetermined sealing structure, and is connected to a rotation mechanism (not shown) arranged outside the processing chamber 1.
[0028]
Note that the heater 18 may be installed inside the heater block main body 16 in a state where the heater 18 is supported by columns or the like. Further, the heater block main body 16 and the shaft 17 may be one piece. Further, the shaft 17 may be connected to an elevating mechanism (not shown) so that the heater block main body 16 moves up and down between the substrate loading / unloading position and the substrate heating position.
[0029]
The cover member 5 surrounds the substrate support member 2 such that a space S is formed between the cover member 5 and the substrate support member 2. In the present embodiment, the cover member 5 is a member that does not participate in supporting the wafer W, and is a member different from the substrate support member 2.
Specifically, the cover member 5 includes a large-diameter cylindrical side wall 5a surrounding the heater block main body 16, a small-diameter cylindrical side wall 5b surrounding the shaft 17, a lower end of the cylindrical side wall 5a and a cylindrical side wall. The space 5 having a stepped portion 5c connecting the upper end of the portion 5b and the substrate supporting member 2 forms a space S having a substantially crank-shaped cross section.
[0030]
The cylindrical side walls 5a and 5b and the step 5c may be configured as separate members, respectively, or may be a single member. Further, the shape of the space S is not particularly limited to a substantially crank shape in cross section, and may be another shape. The shaft 17 may be hollow, but may be solid.
[0031]
The lower end of the cover member 5, that is, the lower end of the small-diameter cylindrical side wall portion 5 b surrounding the shaft 17 is fixed to the bottom wall of the processing chamber 1. That is, during processing of the wafer W, for example, only the inner substrate support member 2 surrounded by the cover member 5 rotates.
[0032]
On the other hand, the upper portion of the large-diameter cylindrical side wall portion 5a is open, and the open end has a circle extending from the side wall of the cylindrical side wall portion 5a toward the end surface 60 (see FIG. 4) of the wafer W. An annular member 20 is provided. The annular member 20 has an inner peripheral surface 20a facing the end surface 60 (see FIG. 4) of the wafer W with a predetermined minute gap G1 therebetween.
[0033]
The height position of the upper surface of the annular member 20 is slightly higher than the upper surface of the wafer W, and a flat ring-shaped cover plate 21 is detachably provided on the upper surface of the annular member 20. . The outer peripheral end of the cover plate 21 is a flange portion 21a that protrudes in a flange shape toward the inner wall side of the processing chamber 1 from the cylindrical side wall portion 5a. The pressure and gas flow in the processing chamber 1 can also be controlled by the amount of protrusion of the flange 21a.
[0034]
On the other hand, the inner peripheral end of the cover plate 21 extends to a position where it can cover the peripheral edge portion 50 (see FIG. 4), which is a region where film formation on the surface of the wafer W is to be avoided, in a plan view. That is, the cover plate 21 has the cover 21b facing the peripheral portion 50 (see FIG. 4) of the surface of the wafer W with a predetermined minute gap G2 therebetween. The cover portion 21b can prevent the processing gas supplied from the processing gas supply port 6 from reaching the peripheral portion 50 on the surface of the wafer W.
[0035]
The cover portion 21b is a tapered portion that tapers (thinns) as it goes in the centripetal direction of the cover plate 21. Therefore, the processing gas supplied from the processing gas supply port 6 toward the wafer W smoothly flows in the radial direction of the wafer W without forming a turbulent flow at the inner peripheral end portion of the cover plate 21.
[0036]
In one embodiment, the gap G2 between the cover 21b and the peripheral edge 50 of the wafer W (see FIG. 4) is used as the purge gas supply port 3. However, the cover plate 21 may be omitted. In this case, the gap G1 between the inner peripheral surface 20a of the annular member 20 and the end surface 60 of the wafer W (see FIG. 4) functions as a purge gas supply port. .
[0037]
The purge gas flow path 4 having the purge gas supply port 3 as an outlet includes the space S as a buffer space S for the purge gas. The purge gas inlet 22 for introducing the purge gas into the buffer space S is formed in the bottom wall of the processing chamber 1 between the concentrically arranged shaft 17 and the cylindrical side wall 5b. The purge gas inlet 22 communicates with a purge gas source via a purge gas pipe (not shown) or the like.
[0038]
That is, in the processing chamber 1, the purge gas flow path 4 includes the buffer space S, the gap G 1 between the inner peripheral surface 20 a of the annular member 20 and the end surface 60 of the wafer W (see FIG. 4), 21 and a gap G2 between the peripheral portion 50 of the wafer W (see FIG. 4). The gap G <b> 1 and the gap G <b> 2 constitute a purge gas flow path extending from the end surface 50 of the wafer W to the peripheral portion 50 (see FIG. 4).
[0039]
The supply pressure of the purge gas from the purge gas supply port 3 is set to a pressure at which at least the processing gas from the processing gas supply port 6 does not enter the buffer space S from the purge gas supply port 3. Further, the supply pressure of the purge gas may be variably set by a purge gas pressure adjusting means (not shown).
[0040]
As described above, the present substrate processing apparatus includes the processing chamber 1 that processes the wafer W, the processing gas supply port 6 that supplies a processing gas into the processing chamber 1, the exhaust port 11 that exhausts the processing chamber 1, A substrate support member 2 for supporting the wafer W in the processing chamber 1; a cover member 5 forming a buffer space S between the substrate support member 2; a purge gas inlet 22 for introducing a purge gas into the buffer space S; And a purge gas supply port 3 that communicates with the space S and supplies a purge gas from the outer peripheral portion of the wafer W into the processing chamber 1.
[0041]
Hereinafter, processing of a wafer W using the present substrate processing apparatus will be described as one process of manufacturing a semiconductor device.
(Substrate support step)
First, the gate valve 14 is opened, an unprocessed wafer W is loaded into the processing chamber 1 from the gate valve 14, and the loaded wafer W is transferred onto the susceptor 15. For carrying in and transferring the wafer W, a transfer robot (not shown) can be used. When the cover plate 21 is used, the cover plate 21 is removed from the annular member 20 in advance, the wafer W is placed on the susceptor 15, and the cover plate 21 is mounted on the annular member 20. The robot hand can also be used for attaching and detaching the cover plate 21 to and from the annular member 20. As described above, the wafer W is supported by the substrate support member 2 while being placed on the susceptor 15 in the processing chamber 1.
[0042]
(Substrate processing step)
Next, a processing gas is supplied to the supported wafer W to process the wafer W.
Specifically, first, the wafer W is heated to a predetermined temperature (for example, 290 to 350 ° C.) by the heater 18 which is a heating element in the heater block 16 (heating step). Thereafter, the pressure in the processing chamber 1 is stabilized at a desired value by the pressure control means 13 or the like. After that, Ru gas and oxygen gas vaporized by the vaporizer 9 are introduced into the processing chamber 1 from the processing gas supply port 6 to form a Ru film on the wafer W while the processing in the processing chamber 1 is completed. The gas is exhausted from the exhaust port 12.
[0043]
At this time, Ru gas (for example, Ru (C ₂ H ₅ C ₅ H ₄ ) ₂ The supply amount of the gas) can be, for example, 0.005 to 0.12 [ccm], and the supply amount of the oxygen gas supplied from the processing gas supply pipe 7a is, for example, 40 to 1500 [sccm]. it can. Then, the respective gases cause a chemical reaction in the processing chamber 1, whereby a Ru film or a Ru oxide film is deposited on the wafer W.
Note that a so-called shower head may be provided in the processing chamber 1 so that the processing gas is supplied from the shower head to the wafer W in a shower shape.
[0044]
However, when forming the Ru film, a purge gas is supplied to the outer peripheral portion (here, the peripheral portion 50 and the end surface 60) of the wafer W supported by the substrate support member 2 (purge gas supply step). As described above, in this purge gas supply step, the purge gas is supplied to the peripheral portion of the wafer W via the buffer space S formed by the substrate support member 2 and the cover member 5 surrounding the substrate support member 2. . Thereby, the supply of the processing gas to the outer peripheral portion of the wafer W is blocked, or at least the processing gas in the outer peripheral portion of the wafer W is sufficiently diluted by the purge gas, so that film formation on the outer peripheral portion can be avoided.
[0045]
When forming the Ru film, the wafer W may be rotated by a rotating mechanism (substrate rotating means) (not shown) (substrate rotating step). More specifically, as the shaft 17 is rotated by the rotation mechanism, the wafer W placed on the susceptor 15 also rotates. Thereby, the uniformity of the thickness of the Ru film formed on the wafer W can be improved.
[0046]
(Substrate unloading process)
Next, when the formation of the Ru film is completed, the processed wafer W is unloaded through the gate valve 14 by a transfer robot or the like in a procedure reverse to the above-described substrate supporting step, and the processing is ended. When the cover plate 21 is used, the cover plate 21 is first removed from the annular member 20, and then the wafer W is carried out.
[0047]
According to the substrate processing apparatus described above, the following effects can be obtained.
(1) The buffer space S is not formed inside the substrate support member 2 but surrounds the substrate support table 2 with a cover member 5 which is not involved in supporting the wafer W and is a member different from the substrate support member 2. As a result, the buffer space S is configured, so that the configuration of the substrate support base 2 itself, and thus the configuration of the entire apparatus, can be simplified while having the purge gas flow path 4, and as a result, the apparatus is inexpensive. Can be realized.
[0048]
(2) Since the space S defined by the cover member 5 and the substrate support member 2 functions as a buffer space for the purge gas, the flow rate of the supplied purge gas is always stable, and the entire circumference of the peripheral edge of the wafer W. The supply pressure of the purge gas from the purge gas supply port 3 becomes uniform. This makes it possible to more reliably and accurately avoid film formation only on the outer peripheral portion of the wafer W.
[0049]
(3) In particular, since the flow path of the purge gas from the end face 60 of the wafer W to the peripheral edge portion 50 (see FIG. 4) is formed by the annular member 20 and the cover plate 21, only the components in these portions are formed. The film can be reliably avoided.
[0050]
(4) Since the cover member 5 and the substrate support member 2 are in a non-contact state separated by the buffer space S, the heating of the cover member 5 is prevented. As a result, undesired film formation on the cover member 5 can be prevented.
[0051]
(5) The cover member 5 prevents the processing gas from adhering to the substrate support member 2. Specifically, since the processing gas is prevented from adhering to the heater block 16, an undesirable film formation on the heater block 16 can be avoided. Thereby, the number of maintenance times of the heater block 16 can be reduced. Further, since the processing gas is prevented from adhering to the seal portion where the shaft 17 penetrates the bottom surface of the processing chamber 1, generation of particles in the seal portion can be reliably avoided.
[0052]
(6) The cover member 5 is fixed to the processing chamber 1, and when rotating the substrate support member 2, only the substrate support member 2 rotates. That is, in the present substrate processing apparatus, even if the substrate support member 2 is rotated, the purge gas flow path 4 does not rotate. Therefore, the configuration of the purge gas flow path itself can be simplified as compared with an apparatus in which the purge gas flow path rotates with the rotation of the member supporting the wafer W, and thus the overall configuration of the present apparatus can be simplified.
[0053]
(7) Although the exhaust amount in the processing chamber 1 can be reduced by the length of the flange portion 21a of the cover plate 21, in order to make the exhaust amount to be reduced uniform, a buffer space for processed gas is provided thereafter. Is preferred. In this regard, in the present substrate processing apparatus, the cover member 5 not only forms the buffer space S for the purge gas between the substrate support member 2 but also the buffer space for the processed gas between the cover member 5 and the inner wall of the processing chamber 1. Since the space is configured, the displacement can be made uniform.
[0054]
[Modification 1]
FIG. 2 shows a main part of a substrate processing apparatus according to another embodiment. 2, the illustration of the processing chamber and the like is omitted, and the same components as those in FIG. 1 are denoted by the same reference numerals. This substrate processing apparatus is substantially the same as that shown in FIG. 1, except that the outer diameter of the susceptor 15 is smaller than the outer diameter of the wafer W.
If the outer diameter of the susceptor 15 is smaller than the outer diameter of the wafer W, the peripheral portion 50 (see FIG. 4) on the back surface of the wafer W is exposed to the buffer space S side. become able to.
[0055]
In detail, in the first modification, the annular member 30 includes a first inner peripheral surface 30a opposed to the end face 60 (see FIG. 4) of the wafer W across the minute gap G1 and a wafer across the minute gap G3. W has a second inner peripheral surface 30b facing a peripheral portion 70 (see FIG. 4) on the back surface of the wafer W, and the cover plate 21 has a peripheral portion 50 (see FIG. 4) on the front surface of the wafer W across a minute gap G2. ), The purge gas flow path 4 includes a gap having a substantially U-shaped cross section that surrounds the entire periphery of the end of the wafer W.
[0056]
According to the first modification, the purge gas supplied from the buffer space S flows along the peripheral edge portion 50, the end surface 60, and the peripheral edge portion 70 of the back surface of the wafer W in this order, and is supplied from the purge gas supply port 3. As a result, undesired deposition on the peripheral portion 70 on the back surface of the wafer W can be more reliably prevented as compared with the above embodiment.
[0057]
[Modification 2]
FIG. 3A shows a modification in which the cover plate 21 is omitted in the above embodiment. As shown in the figure, in Modification Example 2, the gap G1 between the inner peripheral surface 20a of the annular member 20 and the end surface 60 of the wafer W becomes the purge gas supply port 3 for the purge gas. The second modification has an advantage that at least film formation on the end surface 60 of the wafer W can be avoided, and since the cover plate 21 is not used, the wafer W can be quickly attached to and detached from the substrate support member 2 and the operation rate of the apparatus can be improved. is there.
[0058]
[Modification 3]
The substrate processing apparatus according to the third modification includes a processing chamber 1 in which processing of a wafer W is performed using a processing gas, a substrate supporting member 2 that supports the wafer W in the processing chamber 1, and a substrate supporting member 2 that supports the wafer W. A purge gas supply port 3 for supplying a purge gas to an outer peripheral portion of the wafer W, and a purge gas flow path 4 having an exit as a discharge port. By surrounding the substrate support member 2, a cover member 5 constituting a buffer space S is provided between the substrate support member 2 and the purge gas flow path 4. The purge gas supplied from each of the purge gas supply ports 3 shares the same buffer space S. It is configured to be supplied.
[0059]
Specifically, as shown in FIG. 3B, in the third modification, the gap G <b> 1 is not secured between the wafer W and the annular member 20, and the plurality of annular members 20 communicate with the buffer space S. Are formed, and a purge gas supply port 3 for a purge gas is formed for each of the through holes 31. The through holes 31 are formed uniformly in the circumferential direction of the annular member 20.
[0060]
In the third modification, the purge gas supplied from each through-hole 31 is supplied while sharing the same buffer space S. Therefore, as compared with the case where a dedicated purge gas flow path is provided for each through-hole 31, The configuration can be simplified. In addition, by rotating the wafer W with respect to the annular member 20 by the rotation mechanism, the purge gas can be more uniformly supplied to the outer peripheral portion of the wafer W.
【The invention's effect】
According to the present invention, the supply of the purge gas to the peripheral portion of the substrate can be realized with a simpler configuration. According to the present invention, a substrate processing apparatus having a purge gas flow path can be realized at low cost.
[Brief description of the drawings]
FIG. 1 is a diagram showing a substrate processing apparatus according to an embodiment.
FIG. 2 is a diagram showing only a main part of a substrate processing apparatus according to another embodiment.
FIG. 3 is a view of a purge gas supply port viewed from a plane direction.
FIG. 4 is a diagram illustrating a region of the substrate where processing (film formation) is desired to be avoided.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Processing chamber, 2 ... Substrate support member, 3 ... Purge gas supply port, 4 ... Purge gas flow path, 5 ... Cover member, 6 ... Processing gas supply port, 11 ... Exhaust port, 15 ... Susceptor (support plate), 18 ... Heater (heating means), 20: annular member (surrounding member), 22: purge gas inlet, S: buffer space, W: wafer (substrate).

Claims (1)

A processing chamber in which processing of the substrate using the processing gas is performed,
A substrate support member for supporting the substrate in the processing chamber;
A purge gas flow path having a purge gas supply port for supplying a purge gas to a peripheral portion of the substrate supported by the substrate support member, and
By surrounding the substrate support member, a cover member constituting a buffer space of the purge gas between the substrate support member,
The substrate processing apparatus, wherein the purge gas flow path includes the buffer space.

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