JP2012136743A - Substrate treatment device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate treatment device, securable of a long-time large amount supply of raw material gas.SOLUTION: The substrate treatment device includes: a treatment chamber for housing and treating a wafer; a bubbler 220a for vaporizing a liquid raw material by bubbling with a carrier gas; and a raw material gas supply pipe 213a for supplying the raw material gas generated by vaporizing the liquid raw material in the bubbler 220a into the treatment chamber. The bubbler 220a includes a container for storing the liquid raw material, and a carrier gas supply pipe 237a for supplying the carrier gas into the liquid raw material, a tip portion of the carrier gas supply pipe being dipped in the liquid raw material stored in the container. A diffusion plate 238 for horizontally diffusing the carrier gas supplied into the liquid raw material through the carrier gas supply pipe 237a is laid on the bottom within the bubbler 220a, and the diffusion plate 237 has a plurality of ejection holes 239 to eject the horizontally diffused carrier gas upward from a plurality of positions.

Description

  The present invention relates to a substrate processing apparatus.

  As a substrate processing apparatus for forming a metal film or a metal oxide film on a substrate, a processing chamber for accommodating and processing the substrate, a vaporizing unit for vaporizing the liquid raw material by bubbling with a carrier gas, and vaporizing the liquid raw material in the vaporizing unit A source gas supply pipe that supplies the source gas generated by the process into the processing chamber, and the vaporization unit includes a container that stores the liquid source, and a tip portion of the liquid source stored in the container. Some have a carrier gas supply pipe that is immersed and supplies a carrier gas into the liquid source. (For example, refer to Patent Document 1).

  In such a substrate processing apparatus, when the vapor pressure of the liquid raw material is low and the supply amount is small, it is necessary to pass the carrier gas through the liquid raw material as saturated vapor and supply it to the processing chamber.

JP 2008-231473 A

  In such a substrate processing apparatus, bubbles that are ejected from the ejection port of the carrier gas supply pipe and pass through the liquid material have a relatively large volume, and thus may not be sufficiently saturated before reaching the liquid surface of the liquid material. As a result, it may be impossible to ensure a long-term supply of the raw material gas.

  An object of the present invention is to provide a substrate processing apparatus capable of ensuring a long-time supply of a source gas.

According to one aspect of the present invention, the following substrate processing apparatus is provided.
A processing chamber for accommodating and processing the substrate;
A vaporizing section for vaporizing liquid raw material by bubbling with a carrier gas;
A raw material gas supply pipe for supplying the raw material gas generated by vaporizing the liquid raw material in the vaporizing section into the processing chamber,
The vaporizing unit is
A container containing the liquid raw material;
A carrier gas supply pipe for supplying the carrier gas into the liquid raw material, the tip portion of which is immersed in the liquid raw material housed in the container;
A diffusion plate for horizontally diffusing the carrier gas supplied from the carrier gas supply pipe into the liquid raw material, wherein the carrier gas diffused horizontally is directed upward from a plurality of locations. A substrate processing apparatus, wherein a plurality of ejection holes are provided for ejection.

  According to the present invention, it is possible to sufficiently saturate the bubbles until the bubbles reach the liquid raw material liquid level, thereby ensuring a long time supply of the liquid raw material.

It is a flowchart by the substrate processing apparatus concerning embodiment of this invention. It is a block diagram of the gas supply system and exhaust system which the substrate processing apparatus concerning embodiment of this invention has. It is a section lineblock diagram at the time of wafer processing of a substrate processing device concerning an embodiment of the present invention. It is a section lineblock diagram at the time of wafer conveyance of a substrate processing device concerning an embodiment of the present invention. It is a longitudinal cross-sectional view which shows the vaporization part concerning embodiment of this invention. It is a schematic block diagram of the vertical processing furnace of the vertical CVD apparatus used suitably by other embodiment of this invention, (a) shows the processing furnace 302 part in a longitudinal cross-section, (b) is the processing furnace 302 part. Is shown by a cross-sectional view along line AA in FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(1) Configuration of Substrate Processing Apparatus First, the configuration of the substrate processing apparatus according to the present embodiment will be described with reference to FIGS. FIG. 3 is a cross-sectional configuration diagram of the substrate processing apparatus according to one embodiment of the present invention during wafer processing, and FIG. 4 is a cross-sectional configuration diagram of the substrate processing apparatus according to one embodiment of the present invention during wafer transfer. is there.

<Processing chamber>
As shown in FIGS. 3 and 4, the substrate processing apparatus according to this embodiment includes a processing container 202. The processing container 202 is configured as a flat sealed container having a circular cross section, for example. Moreover, the processing container 202 is comprised, for example with metal materials, such as aluminum (Al) and stainless steel (SUS). A processing chamber 201 for processing a wafer 200 such as a silicon wafer as a substrate is formed in the processing container 202.

<Support stand>
A support table 203 that supports the wafer 200 is provided in the processing chamber 201. For example, quartz (SiO ₂ ), carbon, ceramics, silicon carbide (SiC), aluminum oxide (Al ₂ O ₃ ), or aluminum nitride (AlN) is formed on the upper surface of the support base 203 that the wafer 200 directly touches. A susceptor 217 is provided as a support plate. In addition, the support base 203 incorporates a heater 206 as a heating means (heating source) for heating the wafer 200. Note that the lower end portion of the support base 203 passes through the bottom portion of the processing container 202.

<Elevating mechanism>
Outside the processing chamber 201, an elevating mechanism 207b for elevating the support base 203 is provided. The wafer 200 supported on the susceptor 217 can be moved up and down by operating the lifting mechanism 207 b to raise and lower the support base 203. The support table 203 is lowered to the position shown in FIG. 4 (wafer transfer position) when the wafer 200 is transferred, and is raised to the position shown in FIG. 3 (wafer processing position) when the wafer 200 is processed. The periphery of the lower end portion of the support base 203 is covered with a bellows 203a, and the inside of the processing chamber 201 is kept airtight.

<Lift pin>
In addition, on the bottom surface (floor surface) of the processing chamber 201, for example, three lift pins 208b are provided so as to rise in the vertical direction. Further, the support base 203 (including the susceptor 217) is provided with through holes 208a through which the lift pins 208b pass, at positions corresponding to the lift pins 208b. When the support table 203 is lowered to the wafer transfer position, as shown in FIG. 4, the upper ends of the lift pins 208b protrude from the upper surface of the susceptor 217, and the lift pins 208b support the wafer 200 from below. Yes. When the support table 203 is raised to the wafer processing position, as shown in FIG. 3, the lift pins 208b are buried from the upper surface of the susceptor 217, and the susceptor 217 supports the wafer 200 from below. In addition, since the lift pins 208b are in direct contact with the wafer 200, it is desirable to form the lift pins 208b with a material such as quartz or alumina.

<Wafer transfer port>
On the inner wall side surface of the processing chamber 201 (processing container 202), a wafer transfer port 250 for transferring the wafer 200 into and out of the processing chamber 201 is provided. The wafer transfer port 250 is provided with a gate valve 251. By opening the gate valve 251, the processing chamber 201 and the transfer chamber (preliminary chamber) 271 communicate with each other. The transfer chamber 271 is formed in a transfer container (sealed container) 272, and a transfer robot 273 that transfers the wafer 200 is provided in the transfer chamber 271. The transfer robot 273 includes a transfer arm 273 a that supports the wafer 200 when the wafer 200 is transferred. By opening the gate valve 251 while the support table 203 is lowered to the wafer transfer position, the transfer robot 273 can transfer the wafer 200 between the processing chamber 201 and the transfer chamber 271. Yes. The wafer 200 transferred into the processing chamber 201 is temporarily placed on the lift pins 208b as described above. Note that a load lock chamber (not shown) is provided on the opposite side of the transfer chamber 271 from the side where the wafer transfer port 250 is provided, and the transfer robot 273 moves the wafer 200 between the load lock chamber and the transfer chamber 271. Can be transported. The load lock chamber functions as a spare chamber for temporarily storing unprocessed or processed wafers 200.

<Exhaust system>
An exhaust port 260 for exhausting the atmosphere in the processing chamber 201 is provided on the inner wall side surface of the processing chamber 201 (processing container 202) on the opposite side of the wafer transfer port 250. An exhaust pipe 261 is connected to the exhaust port 260 via an exhaust chamber 260a. The exhaust pipe 261 has a pressure regulator 262 such as an APC (Auto Pressure Controller) that controls the inside of the processing chamber 201 at a predetermined pressure. A raw material recovery trap 263 and a vacuum pump 264 are connected in series in this order. An exhaust system (exhaust line) is mainly configured by the exhaust port 260, the exhaust chamber 260a, the exhaust pipe 261, the pressure regulator 262, the raw material recovery trap 263, and the vacuum pump 264.

<Gas inlet>
A gas inlet 210 for supplying various gases into the processing chamber 201 is provided on the upper surface (ceiling wall) of a shower head 240 described later provided in the upper portion of the processing chamber 201. The configuration of the gas supply system connected to the gas inlet 210 will be described later.

<Shower head>
A shower head 240 as a gas dispersion mechanism is provided between the gas inlet 210 and the processing chamber 201. The shower head 240 disperses the gas introduced from the gas introduction port 210 and the gas that has passed through the dispersion plate 240 a are more uniformly dispersed and supplied to the surface of the wafer 200 on the support table 203. A shower plate 240b. The dispersion plate 240a and the shower plate 240b are provided with a plurality of vent holes. The dispersion plate 240 a is disposed so as to face the upper surface of the shower head 240 and the shower plate 240 b, and the shower plate 240 b is disposed so as to face the wafer 200 on the support table 203. Note that spaces are provided between the upper surface of the shower head 240 and the dispersion plate 240a, and between the dispersion plate 240a and the shower plate 240b, respectively, and the spaces are supplied from the gas inlet 210. Function as a first buffer space (dispersion chamber) 240c for dispersing the gas and a second buffer space 240d for diffusing the gas that has passed through the dispersion plate 240a.

<Exhaust duct>
A step portion 201a is provided on the side surface of the inner wall of the processing chamber 201 (processing vessel 202). The step portion 201a is configured to hold the conductance plate 204 in the vicinity of the wafer processing position. The conductance plate 204 is configured as a single donut-shaped (ring-shaped) disk in which a hole for accommodating the wafer 200 is provided in the inner periphery. A plurality of discharge ports 204 a arranged in the circumferential direction with a predetermined interval are provided on the outer periphery of the conductance plate 204. The discharge port 204 a is formed discontinuously so that the outer periphery of the conductance plate 204 can support the inner periphery of the conductance plate 204.

  On the other hand, a lower plate 205 is locked to the outer peripheral portion of the support base 203. The lower plate 205 includes a ring-shaped concave portion 205b and a flange portion 205a provided integrally on the inner upper portion of the concave portion 205b. The recess 205 b is provided so as to close a gap between the outer peripheral portion of the support base 203 and the inner wall side surface of the processing chamber 201. A part of the bottom of the recess 205b near the exhaust port 260 is provided with a plate exhaust port 205c for exhausting (circulating) gas from the recess 205b to the exhaust port 260 side. The flange portion 205 a functions as a locking portion that locks on the upper outer periphery of the support base 203. When the flange portion 205 a is locked on the upper outer periphery of the support base 203, the lower plate 205 is moved up and down together with the support base 203 as the support base 203 is moved up and down.

  When the support table 203 is raised to the wafer processing position, the lower plate 205 is also raised to the wafer processing position. As a result, the conductance plate 204 held in the vicinity of the wafer processing position closes the upper surface portion of the recess 205b of the lower plate 205, and the exhaust duct 259 having the gas passage region inside the recess 205b is formed. . At this time, due to the exhaust duct 259 (the conductance plate 204 and the lower plate 205) and the support base 203, the inside of the processing chamber 201 is above the processing chamber above the exhaust duct 259 and the processing chamber below the exhaust duct 259. It will be partitioned into a lower part. The conductance plate 204 and the lower plate 205 are made of materials that can be kept at a high temperature, for example, high temperature and high load resistance, in consideration of etching reaction products deposited on the inner wall of the exhaust duct 259 (self cleaning). Preferably, it is made of quartz for use.

  Here, the flow of gas in the processing chamber 201 during wafer processing will be described. First, the gas supplied from the gas inlet 210 to the upper part of the shower head 240 enters the second buffer space 240d through the first buffer space (dispersion chamber) 240c through a large number of holes in the dispersion plate 240a, and further the shower. It passes through a large number of holes in the plate 240 b and is supplied into the processing chamber 201, and is uniformly supplied onto the wafer 200. The gas supplied onto the wafer 200 flows radially outward of the wafer 200 in the radial direction. Then, surplus gas after contacting the wafer 200 flows radially on the exhaust duct 259 located on the outer peripheral portion of the wafer 200, that is, on the conductance plate 204 toward the radially outer side of the wafer 200. Is discharged into the gas flow path region (in the recess 205b) in the exhaust duct 259. Thereafter, the gas flows through the exhaust duct 259 and is exhausted to the exhaust port 260 via the plate exhaust port 205c. By flowing the gas in this way, gas wraparound to the lower part of the processing chamber, that is, the back surface of the support base 203 or the bottom surface side of the processing chamber 201 is suppressed.

<Gas supply system>
Next, the configuration of the gas supply system connected to the gas inlet 210 described above will be described with reference to FIG. FIG. 2 is a configuration diagram of a gas supply system and an exhaust system included in the substrate processing apparatus according to the embodiment of the present invention.

  A gas supply system of a substrate processing apparatus according to an embodiment of the present invention includes a bubbler as a vaporizing unit that vaporizes a liquid material containing nickel (Ni) that is in a liquid state at room temperature, and vaporizes the liquid material using the bubbler. A raw material gas supply system for supplying the obtained raw material gas into the processing chamber 201, a reducing gas supply system for supplying a reducing gas into the processing chamber 201, a purge gas supply system for supplying purge gas into the processing chamber 201, have. Furthermore, the substrate processing apparatus according to the embodiment of the present invention has a vent (bypass) system that exhausts the processing gas to bypass the processing chamber 201 without supplying the raw material gas from the bubbler into the processing chamber 201. Below, the structure of each part is demonstrated.

<Bubbler>
Outside the processing chamber 201, a bubbler 220a is provided as a raw material container for storing a liquid raw material. The bubbler 220a is configured as a tank (sealed container) capable of containing (filling) a liquid source therein, and is also configured as a vaporizing unit that generates a source gas by vaporizing the liquid source by bubbling. A sub-heater 206a for heating the bubbler 220a and the liquid material inside is provided around the bubbler 220a. As the raw material, for example, tetrakistrifluorophosphine nickel (Ni (PF ₃ ) ₄ ), which is a metal liquid raw material containing a nickel (Ni) element, is used.

A carrier gas supply pipe 237a is connected to the bubbler 220a. A carrier gas supply source (not shown) is connected to the upstream end of the carrier gas supply pipe 237a. The carrier gas supply pipe 237a is provided with a mass flow controller (MFC) 222a as a flow rate controller for controlling the supply flow rate of the carrier gas, and valves va1 and va2 for controlling the supply of the carrier gas.
As shown in FIG. 5, the liquid raw material is accommodated in the bubbler 220 a, and the carrier gas supply pipe 237 a is immersed in the liquid raw material at the tip portion which is the downstream end portion. A diffusion plate 238 for horizontally diffusing the carrier gas supplied into the liquid raw material from the carrier gas supply pipe 237a is laid horizontally at the bottom of the bubbler 220a, and the opening at the tip of the carrier gas supply pipe 237a is diffused. Located below the plate 238. A plurality of ejection holes 239 are formed in the diffusion plate 238, and the plurality of ejection holes 239 respectively eject carrier gas diffused in the horizontal direction upward.
As the carrier gas, a gas that does not react with the liquid raw material is preferably used. For example, an inert gas such as N ₂ gas, Ar gas, or He gas is preferably used. A carrier gas supply system (carrier gas supply line) is mainly configured by the carrier gas supply pipe 237a, the MFC 222a, and the valves va1 and va2.

With the above configuration, by opening the valves va1 and va2 and supplying the carrier gas whose flow rate is controlled by the MFC 222a from the carrier gas supply pipe 237a into the bubbler 220a, the liquid raw material stored in the bubbler 220a is vaporized by bubbling. Source gas can be generated.
At this time, as shown in FIG. 5, the carrier gas supplied below the diffusion plate 238 in the liquid raw material of the bubbler 220 a from the tip opening of the carrier gas supply pipe 237 a is diffused in the horizontal direction by the diffusion plate 238. The bubbles 240 are ejected upward from the plurality of ejection holes 239, respectively. The bubbles 240 ejected from the respective ejection holes 239 have a small volume, but the contact area with the liquid raw material as a whole of the plurality of ejection holes 239 is enormous, and diffused in the horizontal direction with respect to the liquid surface to each other. By being spaced apart, it is possible to suppress the phenomenon of bubbles coalescing and pass through the liquid raw material for a long period of time, so that the liquid raw material is contained in the bubbles before the bubbles reach the liquid surface of the liquid raw material. It will be fully saturated. Therefore, it is possible to ensure a long time supply of the raw material gas.

<Raw gas supply system>
A raw material gas supply pipe 213a for supplying the raw material gas generated in the bubbler 220a into the processing chamber 201 is connected to the bubbler 220a. The upstream end of the source gas supply pipe 213a communicates with the space existing above the bubbler 220a. The downstream end of the source gas supply pipe 213a is connected to the gas inlet 210. The source gas supply pipe 213a is provided with valves va5 and va3 in order from the upstream side. The valve va5 is a valve for controlling the supply of the source gas from the bubbler 220a into the source gas supply pipe 213a, and is provided in the vicinity of the bubbler 220a. The valve va3 is a valve that controls the supply of the source gas from the source gas supply pipe 213a into the processing chamber 201, and is provided in the vicinity of the gas inlet 210. The valve va3 and a valve ve3 described later are configured as a highly durable high-speed gas valve. The high durability high-speed gas valve is an integrated valve configured so that gas supply can be switched and gas exhausted quickly in a short time. The valve ve3 is a valve that controls the introduction of a purge gas for purging the inside of the processing chamber 201 after purging the space between the valve va3 of the source gas supply pipe 213a and the gas inlet 210 at high speed.

  With the above configuration, it is possible to supply the source gas from the source gas supply pipe 213a into the processing chamber 201 by opening the valves va5 and va3 while vaporizing the liquid source in the bubbler 220a. Become. A source gas supply system (source gas supply line) is mainly configured by the source gas supply pipe 213a and the valves va5 and va3.

  Further, a raw material supply system (raw material supply line) is mainly configured by the carrier gas supply system, the bubbler 220a, and the raw material gas supply system.

<Reducing gas supply system>
Further, a reducing gas supply source 220b for supplying a reducing gas is provided outside the processing chamber 201. The upstream end of the reducing gas supply pipe 213b is connected to the reducing gas supply source 220b. The downstream end of the reducing gas supply pipe 213b is connected to the gas inlet 210 through a valve vb3. The reducing gas supply pipe 213b is provided with a mass flow controller (MFC) 222b as a flow rate controller that controls the supply flow rate of the reducing gas, and valves vb1, vb2, and vb3 that control the supply of the reducing gas. . As the reducing gas, a hydrogen-containing gas is used. In the present embodiment, for example, hydrogen (H ₂ ) gas or ammonia (NH ₃ ) gas is used. That is, in this embodiment, the reducing gas supply source 220b is configured as a hydrogen-containing gas supply source. A reducing gas supply system (reducing gas supply line), that is, a hydrogen-containing gas supply system (hydrogen-containing gas supply) is mainly constituted by a reducing gas supply source 220b, a reducing gas supply pipe 213b, an MFC 222b, and valves vb1, vb2, and vb3. Line).

<Purge gas supply system>
In addition, purge gas supply sources 220 c and 220 e for supplying purge gas are provided outside the processing chamber 201. The upstream ends of the purge gas supply pipes 213c and 213e are connected to the purge gas supply sources 220c and 220e, respectively. The downstream end of the purge gas supply pipe 213c is connected to the gas inlet 210 through the valve vc3. The downstream end of the purge gas supply pipe 213e joins a portion between the valve va3 and the gas inlet 210 of the source gas supply pipe 213a via the valve ve3 and is connected to the gas inlet 210. The purge gas supply pipes 213c and 213e include mass flow controllers (MFC) 222c and 222e as flow rate controllers that control the supply flow rate of the purge gas, and valves vc1, vc2, vc3, ve1, ve2, and ve3 that control the supply of the purge gas. Each is provided. Further, for maintenance, a purge gas supply pipe 213f is connected via a valve vc4 between the reducing gas supply source 220b of the reducing gas supply pipe 213b and the valve vb1. The purge gas supply pipe 213f is branched from the portion of the purge gas supply pipe 213c between the mass flow controller 222c and the valve vc2. As the purge gas, for example, an inert gas such as N ₂ gas, Ar gas, or He gas is used. A purge gas supply system (purge gas supply line) is mainly configured by purge gas supply sources 220c and 220e, purge gas supply pipes 213c, 213e, and 213f, MFCs 222c and 222e, and valves vc1, vc2, vc3, vc4, ve1, ve2, and ve3. The

<Vent (bypass) system>
The upstream end of the vent pipe 215a is connected to the upstream side of the valve va3 of the source gas supply pipe 213a. Further, the downstream end of the vent pipe 215 a is connected to the downstream side of the pressure regulator 262 of the exhaust pipe 261 and to the upstream side of the raw material recovery trap 263. The vent pipe 215a is provided with a valve va4 for controlling the gas flow.

  With the above configuration, by closing the valve va3 and opening the valve va4, the process chamber 201 is bypassed through the vent pipe 215a without supplying the gas flowing in the source gas supply pipe 213a into the process chamber 201, Exhaust from the exhaust pipe 261 becomes possible. A vent system (vent line) is mainly configured by the vent pipe 215a and the valve va4.

  As described above, the sub-heater 206a is provided around the bubbler 220a. In addition, the carrier gas supply pipe 237a, the source gas supply pipe 213a, the purge gas supply pipe 213e, the vent pipe 215a, the exhaust pipe 261, the processing A sub-heater 206a is also provided around the container 202, the shower head 240, and the like. The sub-heater 206a is configured to prevent re-liquefaction of the source gas inside these members by heating these members to a temperature of, for example, 100 ° C. or less.

<Control unit>
The substrate processing apparatus according to the present embodiment includes a controller 280 as a control unit that controls the operation of each unit of the substrate processing apparatus. The controller 280 includes a gate valve 251, an elevating mechanism 207b, a transfer robot 273, a heater 206, a sub heater 206a, a pressure regulator (APC) 262, a vacuum pump 264, valves va1 to va5, vb1 to vb3, vc1 to vc4, and ve1 to ve3. The operation of the flow controllers 222a, 222b, 222c, 222e and the like is controlled.

(2) Substrate Processing Step Next, a substrate processing step for forming a metal film on a wafer in a processing container using the above-described substrate processing apparatus as one step of a semiconductor device manufacturing process will be described with reference to FIG. explain. FIG. 1 is a flowchart of a substrate processing process according to an embodiment of the present invention. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 280.

Here, a wafer as a substrate is carried into the processing container and heated, and in that state, H ₂ gas or NH ₃ gas is supplied into the processing container as a reducing gas, exhausted, and heated. A step of pre-processing the wafer, a step of supplying and exhausting N ₂ gas as an inert gas into the processing vessel, and removing the reducing gas remaining in the processing vessel, and removing the reducing gas Ni (PF ₃ ) ₄ is supplied and exhausted as a raw material containing nickel (Ni) into the processed container, and a nickel film (Ni film) is formed as a metal film containing nickel on the heated wafer that has been pretreated. ) Will be described. In the step of forming the Ni film, Ni (PF ₃ ) ₄ is supplied into the processing container and exhausted to form the Ni film on the heated wafer that has been preprocessed. A process of supplying N ₂ gas as an inert gas and exhausting it to purge the inside of the processing vessel is defined as one cycle, and this cycle is performed a predetermined number of times, so that CVD is performed on the wafer that has been pre-processed (reduction process). An example of forming a Ni film having a predetermined thickness by the method will be described.

  In the present specification, the term metal film means a film composed of a conductive substance containing metal atoms. In addition to a conductive single metal film composed of a single metal, A conductive metal nitride film, a conductive metal oxide film, a conductive metal oxynitride film, a conductive metal composite film, a conductive metal alloy film, a conductive metal silicide film, and the like are also included. The Ni film is a conductive single metal film composed of a single metal. This will be described in detail below.

<Substrate Loading Step (S1), Substrate Placement Step (S2)>
First, the elevating mechanism 207b is operated to lower the support table 203 to the wafer transfer position shown in FIG. Then, the gate valve 251 is opened to allow the processing chamber 201 and the transfer chamber 271 to communicate with each other. Then, the wafer 200 to be processed is loaded from the transfer chamber 271 into the processing chamber 201 by the transfer robot 273 while being supported by the transfer arm 273a (S1). The wafer 200 carried into the processing chamber 201 is temporarily placed on the lift pins 208 b protruding from the upper surface of the support table 203. When the transfer arm 273a of the transfer robot 273 returns from the processing chamber 201 to the transfer chamber 271, the gate valve 251 is closed.

  Subsequently, the elevating mechanism 207b is operated to raise the support table 203 to the wafer processing position shown in FIG. As a result, the lift pins 208b are buried from the upper surface of the support table 203, and the wafer 200 is placed on the susceptor 217 on the upper surface of the support table 203 (S2).

<Pressure adjustment step (S3), temperature adjustment step (S4)>
Subsequently, the pressure regulator (APC) 262 controls the pressure in the processing chamber 201 to be a predetermined processing pressure (S3). Further, the power supplied to the heater 206 is adjusted to control the surface temperature of the wafer 200 to a predetermined processing temperature (S4). The temperature adjustment step (S4) may be performed in parallel with the pressure adjustment step (S3), or may be performed prior to the pressure adjustment step (S3). Here, the predetermined processing temperature and processing pressure are processing temperature and processing pressure at which a Ni film can be formed by a CVD method in a raw material supply step described later. That is, the processing temperature and the processing pressure are such that the raw material used in the raw material supply process is self-decomposed. Here, the predetermined processing temperature and processing pressure are also processing temperature and processing pressure at which pretreatment with the reducing gas can be performed on the wafer 200 in the reducing gas supply step described later.

In the substrate loading step (S1), the substrate placement step (S2), the pressure adjustment step (S3), and the temperature adjustment step (S4), the valves va3 and vb3 are closed while the vacuum pump 264 is operated. By opening vc 1, vc 2, vc 3, ve 1, ve 2, ve 3, N ₂ gas is always allowed to flow into the processing chamber 201. Thereby, adhesion of particles on the wafer 200 can be suppressed.

<Pretreatment step (S5)>
[Reducing gas supply step (S5a)]
Subsequently, while the vacuum pump 264 is operated, the valves vb1, vb2, and vb3 are opened, and supply of H ₂ gas or NH ₃ gas as a reducing gas into the processing chamber 201 is started. The reducing gas is dispersed by the shower head 240 and is uniformly supplied onto the wafer 200 in the processing chamber 201. Excess reducing gas flows through the exhaust duct 259 and is exhausted to the exhaust port 260 and the exhaust pipe 261. At this time, the wafer 200 is pre-processed by the reducing gas supplied onto the wafer 200.

Note that when the reducing gas is supplied into the processing chamber 201, the reducing gas is prevented from entering the raw material gas supply pipe 213a and the diffusion of the reducing gas in the processing chamber 201 is promoted. The valves ve1, ve2, and ve3 are preferably kept open, and the N ₂ gas is always allowed to flow into the processing chamber 201.

When a predetermined time elapses after the valves vb1, vb2, and vb3 are opened and the supply of the reducing gas is started, the valves vb1, vb2, and vb3 are closed and the supply of the reducing gas into the processing chamber 201 is stopped. Thereafter, with the valves (not shown) provided in the reducing gas supply source 220b closed, the valves vc1, vc4, vb1, vb2, and vb3 are opened, and N ₂ gas is supplied into the reducing gas supply pipe 213b. The inside of the reducing gas supply pipe 213b is purged.

[Purge process (S5b)]
Thereafter, the processing chamber 201 is evacuated, the valves vc 1, vc 2, vc 3, ve 1, ve 2 and ve 3 are opened, and N ₂ gas is supplied into the processing chamber 201. The N ₂ gas is dispersed by the shower head 240 and supplied into the processing chamber 201, flows through the exhaust duct 259, and is exhausted to the exhaust port 260 and the exhaust pipe 261. Thereby, reducing gas and reaction by-products remaining in the processing chamber 201 are removed, and the inside of the processing chamber 201 is purged with N ₂ gas. Although this purge step may be omitted, if this purge step is omitted, in the raw material supply step (S6a) described later, the reducing gas and the raw material (Ni (PF ₃ ) ₄ ) gas are mixed in the processing chamber. 201, Ni (PF ₃ ) ₄ is excessively decomposed, and P (phosphorus), which is one of the elements constituting the raw material, is likely to be mixed into the formed Ni film. It was found that the concentration of P in the medium increased. Therefore, in the case where a raw material that easily reacts with a reducing gas (H ₂ gas or NH ₃ gas) such as Ni (PF ₃ ) ₄ is used as the raw material, this purging step cannot be omitted, and the Ni film It can be said that it is an indispensable process for reducing the impurity concentration (P concentration).

In parallel with the steps S1 to S5, the raw material (Ni (PF ₃ ) ₄ ) is vaporized to generate a raw material gas (preliminary vaporization). That is, by opening the valves va1, va2, va5 and supplying the carrier gas whose flow rate is controlled by the MFC 222a from the carrier gas supply pipe 237a into the bubbler 220a, the raw material contained in the bubbler 220a is evaporated by bubbling. A gas is generated (preliminary vaporization step). In this preliminary vaporization step, while the vacuum pump 264 is operated, the valve va4 is opened while the valve va3 is closed, thereby bypassing and exhausting the processing chamber 201 without supplying the source gas into the processing chamber 201. deep. A predetermined time is required to stably generate the source gas in the bubbler. For this reason, in this embodiment, the raw material gas is generated in advance, and the flow path of the raw material gas is switched by switching the opening and closing of the valves va3 and va4. As a result, it is preferable that the stable supply of the source gas into the processing chamber 201 can be started or stopped quickly by switching the valve.

<Ni film forming step (S6)>
[Raw material supply step (S6a)]
Subsequently, the valve va4 is closed and the valve va3 is opened while the vacuum pump 264 is operated, and supply of the source gas (Ni source) into the processing chamber 201 is started. The source gas is dispersed by the shower head 240 and is uniformly supplied onto the wafer 200 in the processing chamber 201. Excess source gas flows through the exhaust duct 259 and is exhausted to the exhaust port 260 and the exhaust pipe 261. At this time, since the processing temperature and the processing pressure are set to a processing temperature and processing pressure at which the raw material gas is self-decomposed, the raw material gas supplied onto the wafer 200 is thermally decomposed to cause a CVD reaction, thereby reducing it. A Ni film is formed on the wafer 200 that has been pretreated with gas.

Note that when supplying the raw material gas into the processing chamber 201, a valve is provided so as to prevent the raw material gas from entering the reducing gas supply pipe 213 b and to promote the diffusion of the raw material gas in the processing chamber 201. It is preferable that vc 1, vc 2, and vc 3 are kept open, and N ₂ gas is always allowed to flow into the processing chamber 201.

  When a predetermined time has elapsed after opening the valve va3 and starting the supply of the raw material gas, the valve va3 is closed and the valve va4 is opened to stop the supply of the raw material gas into the processing chamber 201.

[Purge process (S6b)]
After the valve va3 is closed and the supply of the raw material gas is stopped, the valves vc1, vc2, vc3, ve1, ve2, ve3 are opened, and N ₂ gas is supplied into the processing chamber 201. The N ₂ gas is dispersed by the shower head 240 and supplied into the processing chamber 201, flows through the exhaust duct 259, and is exhausted to the exhaust port 260 and the exhaust pipe 261. As a result, the raw material gas and reaction byproducts remaining in the processing chamber 201 are removed, and the inside of the processing chamber 201 is purged with N ₂ gas.

[Predetermined number of steps (S6c)]
The above-described raw material supply process and purge process are defined as one cycle, and this cycle is performed a predetermined number of times to form a nickel film (Ni film) having a predetermined thickness on the pre-processed wafer 200. In this embodiment, the raw material may be flowed not only in a pulse form but also continuously. In this case, the cycle of the raw material supply process and the purge process is performed once (in this case, the raw material is continuously supplied). Corresponds to the case).

[Residual gas removal step (S7)]
After the Ni film having a predetermined thickness is formed on the wafer 200, the processing chamber 201 is evacuated, the valves vc1, vc2, vc3, ve1, ve2, and ve3 are opened, and the N ₂ gas is supplied into the processing chamber 201. Supply. The N ₂ gas is dispersed by the shower head 240 and supplied into the processing chamber 201, flows through the exhaust duct 259, and is exhausted to the exhaust port 260 and the exhaust pipe 261. As a result, gas and reaction byproducts remaining in the processing chamber 201 are removed, and the inside of the processing chamber 201 is purged with N ₂ gas.

<Substrate unloading step (S7)>
Thereafter, the wafer 200 after the Ni film having a predetermined film thickness is formed from the inside of the processing chamber 201 by a procedure opposite to the procedure shown in the substrate loading step (S1) and the substrate placing step (S2). Then, the substrate processing step according to the present embodiment is completed. In the nickel silicide (NiSi) process, for example, the wafer after the Ni film having a predetermined thickness is subsequently transferred to the annealing apparatus, and the annealing apparatus is in an inert atmosphere. An NiSi film is formed by performing a solid phase reaction between the Ni film and the underlying Si (wafer).

In addition, as a processing condition of the wafer 200 in the preprocessing step (S5) with the reducing gas in the present embodiment,
Processing temperature (wafer temperature): 150-250 ° C.
Processing pressure (pressure in the processing chamber): 50 to 5000 Pa,
Reducing gas (H ₂ gas or NH ₃ gas) supply flow rate: 50 to 1000 sccm,
Reducing gas (H ₂ gas or NH ₃ gas) supply time 10 to 600 seconds,
Purge gas (N ₂ ) supply flow rate: 10 to 10,000 sccm,
Is exemplified.

In addition, as a processing condition of the wafer 200 in the Ni film forming step (S6) in the present embodiment,
Processing temperature (wafer temperature): 150-250 ° C.
Processing pressure (pressure in the processing chamber): 50 to 5000 Pa,
Bubbling carrier gas supply flow rate: 10 to 1000 sccm,
(Nickel raw material (Ni (PF ₃ ) ₄ ) gas supply flow rate: 0.1 to 2 sccm)
Purge gas (N ₂ ) supply flow rate: 10 to 10,000 sccm,
Raw material (Ni (PF ₃ ) ₄ ) supply time per cycle: 0.1 to 600 seconds,
Purge time per cycle: 0.1 to 600 seconds,
Number of cycles: 1 to 400 times
Ni film thickness: 10-30 nm
Is exemplified.

If the processing temperature is lower than 150 ° C. in the above processing pressure zone, the raw material (Ni (PF ₃ ) ₄ ) is not self-decomposed in the raw material supply step (S6a), and the film formation reaction by CVD does not occur. In addition, when the processing temperature exceeds 250 ° C. in the processing pressure zone described above, the film formation rate increases excessively, making it difficult to control the film thickness. Therefore, in the raw material supply step (S6a), in order to cause a film formation reaction by CVD and control the film thickness, it is necessary to set the processing temperature to 150 ° C. or higher and 250 ° C. or lower. It has been confirmed that the wafer 200 can be pre-processed in the reducing gas supply step (S5a) within the processing pressure zone and the processing temperature zone. Therefore, in the present embodiment, the pretreatment step (S5) and the Ni film formation step (S6) are performed by setting the same processing temperature zone and the same processing pressure zone. This eliminates the need to provide a process temperature changing process or a process pressure changing process between the pretreatment process (S5) and the Ni film forming process (S6), thereby improving throughput, that is, productivity. be able to. From the viewpoint of improving productivity, it is important to perform the pretreatment step (S5) and the Ni film formation step (S6) in the same treatment temperature range, but changing the treatment pressure affects the productivity. The impact is small. Therefore, in the pretreatment step (S5), an optimum pressure zone for the reduction treatment may be selected.

  According to the present embodiment, the Ni film forming step (S6) is performed by performing the pretreatment using the reducing gas on the wafer 200 in the pretreatment step (S5) before the Ni film forming step (S6). Ni is promoted to adsorb Ni on the surface of the wafer 200, and the initial nucleation density becomes dense. As a result, it is possible to form a continuous film (low resistance film) in a thin film region and to have a good surface morphology. It is possible to form a simple Ni film. Further, not only the grain density of the Ni film but also the grain size can be controlled by the reduction treatment in the pretreatment step (S5). Furthermore, it is possible to form a high-quality Ni film having excellent step coverage and adhesion.

  In the above-described embodiment, the example in which the Ni film is formed as the Ni-containing film has been described. However, the Ni-containing film is Ni, NixSiy, or NixOy (wherein x and y indicate integers or fractions). There may be. The present invention can be similarly applied to the case where a film containing Ni is used.

  In the above-described embodiment, the example in which the pretreatment process (S5) is started after the completion of the temperature adjustment process (S4) has been described. However, the pretreatment process (S5) is started before the completion of the temperature adjustment process (S4). Also good. That is, the reducing gas supply step (S5a) may be started while the temperature of the wafer 200 is raised. By doing so, it is possible to advance the end time of the preprocessing step (S5), and it is possible to improve the throughput of the substrate processing step.

<Other Embodiments of the Present Invention>
In the above-described embodiment, an example of forming a film using a single-wafer type CVD apparatus that processes one substrate at a time as a substrate processing apparatus (film forming apparatus) has been described. It is not limited to. For example, the film may be formed using a batch type vertical CVD apparatus that processes a plurality of substrates at a time as a substrate processing apparatus.
Hereinafter, this vertical CVD apparatus will be described.

  FIG. 6 is a schematic configuration diagram of a vertical processing furnace of a vertical CVD apparatus preferably used in the present embodiment. FIG. 6A shows a processing furnace 302 portion in a vertical cross section, and FIG. 6B shows a processing furnace. 302 part is shown by the sectional view on the AA line of Fig.6 (a).

  As shown in FIG. 6A, the processing furnace 302 has a heater 307 as a heating means (heating mechanism). The heater 307 has a cylindrical shape and is vertically installed by being supported by a heater base as a holding plate.

Inside the heater 307, a process tube 303 as a reaction tube is disposed concentrically with the heater 307. The process tube 303 is made of a heat-resistant material such as quartz (SiO ₂ ) or silicon carbide (SiC), and has a cylindrical shape with the upper end closed and the lower end opened. A processing chamber 301 is formed in a cylindrical hollow portion of the process tube 303 so that wafers 200 as substrates can be accommodated in a state of being aligned in multiple stages in a vertical posture in a horizontal posture by a boat 317 described later.

  A manifold 309 is disposed below the process tube 303 concentrically with the process tube 303. The manifold 309 is made of, for example, stainless steel and is formed in a cylindrical shape with an upper end and a lower end opened. The manifold 309 is engaged with the process tube 303 and is provided to support the process tube 303. An O-ring 320a as a seal member is provided between the manifold 309 and the process tube 303. Since the manifold 309 is supported by the heater base, the process tube 303 is vertically installed. A reaction vessel is formed by the process tube 303 and the manifold 309.

  A first nozzle 333 a as a first gas introduction part and a second nozzle 333 b as a second gas introduction part are connected to the manifold 309 so as to penetrate the side wall of the manifold 309. Each of the first nozzle 333a and the second nozzle 333b has an L shape having a horizontal portion and a vertical portion, the horizontal portion is connected to the manifold 309, and the vertical portion is between the inner wall of the process tube 303 and the wafer 200. It is provided in an arc-shaped space so as to rise in the stacking direction of the wafer 200 along the inner wall above the lower part of the process tube 303. A first gas supply hole 348a and a second gas supply hole 348b, which are supply holes for supplying gas, are provided on the side surfaces of the vertical portions of the first nozzle 333a and the second nozzle 333b, respectively. The first gas supply hole 348a and the second gas supply hole 348b have the same opening area from the lower part to the upper part, and are provided at the same opening pitch.

  The gas supply system connected to the first nozzle 333a and the second nozzle 333b is the same as in the above-described embodiment. However, the present embodiment is different from the above-described embodiment in that a source gas supply system is connected to the first nozzle 333a and a reducing gas supply system is connected to the second nozzle 333b. That is, in this embodiment, the source gas and the reducing gas are supplied by separate nozzles. The source gas and the reducing gas may be supplied from the same nozzle.

  The manifold 309 is provided with an exhaust pipe 331 that exhausts the atmosphere in the processing chamber 301. A vacuum pump 346 as an evacuation device is connected to the exhaust pipe 331 through a pressure sensor 345 as a pressure detector and an APC (Auto Pressure Controller) valve 342 as a pressure regulator. By adjusting the APC valve 342 based on the detected pressure information, the processing chamber 301 is configured to be evacuated so that the pressure in the processing chamber 301 becomes a predetermined pressure (degree of vacuum). Note that the APC valve 342 is configured to open and close the valve to evacuate / stop evacuation in the processing chamber 301, and to adjust the valve opening to adjust the pressure in the processing chamber 301. Open / close valve.

  Below the manifold 309, a seal cap 319 is provided as a furnace port lid that can airtightly close the lower end opening of the manifold 309. The seal cap 319 is brought into contact with the lower end of the manifold 309 from the lower side in the vertical direction. The seal cap 319 is made of a metal such as stainless steel and is formed in a disk shape. On the upper surface of the seal cap 319, an O-ring 320b is provided as a seal member that contacts the lower end of the manifold 309. On the opposite side of the seal cap 319 from the processing chamber 301, a rotation mechanism 367 for rotating a boat 317 described later is installed. A rotation shaft 355 of the rotation mechanism 367 passes through the seal cap 319 and is connected to the boat 317, and is configured to rotate the wafer 200 by rotating the boat 317. The seal cap 319 is configured to be moved up and down in a vertical direction by a boat elevator 315 as an elevating mechanism disposed outside the process tube 303, and thereby the boat 317 is carried into and out of the processing chamber 301. It is possible.

  The boat 317 as a substrate holder is made of a heat-resistant material such as quartz or silicon carbide, and is configured to hold a plurality of wafers 200 in a horizontal posture and in a state where the centers are aligned with each other and held in multiple stages. Yes. A heat insulating member 318 made of a heat resistant material such as quartz or silicon carbide is provided at the lower part of the boat 317 so that heat from the heater 307 is not easily transmitted to the seal cap 319 side. A temperature sensor 363 as a temperature detector is installed in the process tube 303, and the temperature in the processing chamber 301 is adjusted by adjusting the power supply to the heater 307 based on the temperature information detected by the temperature sensor 363. Is configured to have a predetermined temperature distribution. The temperature sensor 363 is provided along the inner wall of the process tube 303, similarly to the first nozzle 333a and the second nozzle 333b.

  The controller 380 as a control unit (control means) includes an APC valve 342, a heater 307, a temperature sensor 363, a vacuum pump 346, a rotation mechanism 367, a boat elevator 315, valves va1 to va5, vb1 to vb3, vc1 to vc4, and ve1. The operation of the ve3, the flow rate controllers 222a, 222b, 222c, 222d, and 222e is controlled.

  Next, a substrate processing process for forming a metal film on the wafer 200 by the CVD method will be described as one process of the manufacturing process of the semiconductor device using the processing furnace 302 of the vertical CVD apparatus according to the above configuration. In the following description, the operation of each unit constituting the vertical CVD apparatus is controlled by the controller 380.

  A plurality of wafers 200 are loaded into the boat 317 (wafer charge). Then, as shown in FIG. 5A, the boat 317 holding the plurality of wafers 200 is lifted by the boat elevator 315 and loaded into the processing chamber 301 (boat loading). In this state, the seal cap 319 is in a state of sealing the lower end of the manifold 309 via the O-ring 320b.

  The inside of the processing chamber 301 is evacuated by a vacuum pump 346 so that the inside of the processing chamber 301 has a desired pressure (degree of vacuum). At this time, the pressure in the processing chamber 301 is measured by the pressure sensor 345, and the APC valve 342 is feedback-controlled based on the measured pressure. In addition, heating is performed by the heater 307 so that the inside of the processing chamber 301 has a desired temperature. At this time, feedback control of the power supply to the heater 307 is performed based on the temperature information detected by the temperature sensor 363 so that the inside of the processing chamber 301 has a desired temperature distribution. Then, the wafer 200 is rotated by rotating the boat 317 by the rotation mechanism 367.

Thereafter, the pretreatment step and the Ni film formation step are performed in the same procedure as the pretreatment step (S5) and the Ni film formation step (S6) in the above-described embodiment. That is, first, a process (S5a) of supplying a H ₂ gas or NH ₃ gas as a reducing gas into the processing chamber 301 and exhausting it to pre-process the heated wafer 200 (S5a); A process of removing the reducing gas remaining in the processing chamber 301 (S5b) is performed by supplying and exhausting N ₂ gas as an inert gas. Thereafter, Ni (PF ₃ ) ₄ is supplied as a raw material into the processing chamber 301 from which the reducing gas has been removed and exhausted to form a Ni film on the heated wafer 200 that has been pre-processed (S6a). ) And a step (S6b) of purging the inside of the processing chamber 301 by supplying and exhausting N ₂ gas as an inert gas into the processing chamber 301, and performing this cycle a predetermined number of times (S6c), A Ni film having a predetermined thickness is formed by CVD on the wafer 200 that has been pre-processed (reduction process). After the Ni film having a predetermined thickness is formed on the wafer 200, the residual gas removal step is performed in the same procedure as the residual gas removal step (S7) in the above-described embodiment.

  Thereafter, the seal cap 319 is lowered by the boat elevator 315 to open the lower end of the manifold 309, and the wafer 200 after the Ni film having a predetermined thickness is formed on the manifold 309 while being held by the boat 317. Unload from the lower end of the process tube 303 (boat unload). Thereafter, the processed wafer 200 is taken out from the boat 317 (wafer discharge).

<Still another embodiment of the present invention>
As described above, when the reducing gas and the raw material (Ni (PF ₃ ) ₄ ) are mixed, decomposition of Ni (PF ₃ ) ₄ proceeds excessively, and P (phosphorus) is mixed into the formed Ni film. It becomes easy and the P concentration in the Ni film may increase. In the above-described embodiment, the method of reducing the P concentration in the Ni film by purging the processing chamber after supplying the reducing gas and before supplying the raw material so that the reducing gas and the raw material are not mixed is described. .

In addition, the P concentration in the Ni film can be reduced by a method different from that of the above-described embodiment. In the present embodiment, in the Ni film formation step (S6), Ni (PF ₃ ) ₄ is supplied and exhausted as a raw material containing Ni into the processing vessel, and a Ni film is formed on the wafer by the CVD method (S6a). And a step (S6b) of purging the inside of the processing container by supplying and exhausting N ₂ gas as an inert gas into the processing container (S6b), and repeating this cycle a plurality of times (S6c) on the wafer By using a film forming method for forming a Ni film having a predetermined thickness, the P concentration in the Ni film is reduced.

In this case, a thin Ni film is formed in the raw material supply step (S6a). At that time, impurities such as P and F generated by decomposition of the raw material may adhere to or be mixed into the Ni film. However, in the subsequent purging step (S6b), the Ni film is left in a heated inert gas atmosphere (N ₂ gas atmosphere), so that impurities such as P and F adhering to or mixed in the Ni film However, it is detached due to the annealing effect. The desorbed impurities such as P and F are discharged out of the processing chamber by purging with an inert gas. By repeating this finely and a plurality of times, it is possible to carefully form a high-quality Ni film while removing impurities adhering to or mixing in the Ni film.

  As described above, according to the processing sequence of the present embodiment, impurities such as P and F generated by the decomposition of the raw material during the film formation process can be suppressed and taken into the Ni film. The impurity concentration in the Ni film, particularly the P concentration, can be greatly reduced. That is, it is possible to form a high-quality Ni film having a low impurity concentration in the film, particularly a low P concentration. As a result, it is possible to prevent deterioration of device characteristics.

  According to this embodiment, the following effects can be obtained.

(1) A diffusion plate 238 having a plurality of ejection holes 239 is laid at the bottom of the bubbler 220a, and the tip opening of the carrier gas supply tube 237a is disposed below the diffusion plate 238, so that the carrier gas supply tube 237a The carrier gas supplied into the liquid raw material of the bubbler 220a from the opening at the front end is diffused in the horizontal direction below the diffusion plate 238 to be ejected upward from the plurality of ejection holes 239 as bubbles 240, respectively. The liquid raw material can be sufficiently saturated before the bubbles reach the liquid surface of the liquid raw material.

(2) By sufficiently saturating the liquid raw material, it is possible to ensure a long-term supply of the raw material gas.

  Needless to say, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention.

  For example, the diffuser plate is not limited to a plate having a plurality of ejection holes, but may be a net structure or a porous structure filter.

  Hereinafter, preferred embodiments of the present invention will be additionally described.

According to one aspect of the present invention, the following substrate processing apparatus is provided.
A processing chamber for accommodating and processing the substrate;
A vaporizing section for vaporizing liquid raw material by bubbling with a carrier gas;
A raw material gas supply pipe for supplying the raw material gas generated by vaporizing the liquid raw material in the vaporizing section into the processing chamber,
The vaporizing unit is
A container containing the liquid raw material;
A carrier gas supply pipe for supplying the carrier gas into the liquid raw material, the tip portion of which is immersed in the liquid raw material housed in the container;
A diffusion plate for horizontally diffusing the carrier gas supplied from the carrier gas supply pipe into the liquid raw material, wherein the carrier gas diffused horizontally is directed upward from a plurality of locations. A substrate processing apparatus, wherein a plurality of ejection holes are provided for ejection.

According to the other aspect of this invention, the following vaporization part is provided.
A vaporizing unit that vaporizes liquid raw material by bubbling with a carrier gas,
The vaporizing unit is
A container containing the liquid raw material;
A carrier gas supply pipe for supplying the carrier gas into the liquid raw material, the tip portion of which is immersed in the liquid raw material housed in the container;
A diffusion plate for horizontally diffusing the carrier gas supplied into the liquid material from the carrier gas supply pipe, and the diffusion plate has the carrier gas diffused in the horizontal direction upward from a plurality of locations. The vaporization part provided with the several ejection hole made to eject toward.

According to still another aspect of the present invention, the following substrate processing method is provided.
A container for storing a liquid source, a carrier gas supply pipe for supplying a carrier gas into the liquid source, and a carrier gas supply pipe for supplying a carrier gas into the liquid source from the carrier gas supply pipe; A diffusion plate for diffusing the carrier gas supplied into the liquid material in the horizontal direction, and a plurality of the diffusion plates for causing the carrier gas diffused in the horizontal direction to be ejected upward from a plurality of locations. Vaporizing the liquid raw material by bubbling with the carrier gas in a vaporization section provided with
Processing the substrate by supplying a source gas generated by vaporizing the liquid source in the vaporization unit to the substrate;
A substrate processing method.

According to still another aspect of the present invention, the following method for manufacturing a semiconductor device is provided.
A container for storing a liquid source, a carrier gas supply pipe for supplying a carrier gas into the liquid source, and a carrier gas supply pipe for supplying a carrier gas into the liquid source from the carrier gas supply pipe; A diffusion plate for diffusing the carrier gas supplied into the liquid material in the horizontal direction, and a plurality of the diffusion plates for causing the carrier gas diffused in the horizontal direction to be ejected upward from a plurality of locations. Vaporizing the liquid raw material by bubbling with the carrier gas in a vaporization section provided with
Processing the substrate by supplying a source gas generated by vaporizing the liquid source in the vaporization unit to the substrate;
A method for manufacturing a semiconductor device comprising:

200 wafer (substrate)
201 processing chamber 202 processing vessel 213a raw material gas supply pipe 213b reducing gas supply pipe 213c purge gas supply pipe 213e purge gas supply pipe 220a bubbler 237a carrier gas supply pipe 238 diffusion plate 239 ejection hole 240 bubble

Claims (1)

A processing chamber for accommodating and processing the substrate;
A vaporizing section for vaporizing liquid raw material by bubbling with a carrier gas;
A raw material gas supply pipe for supplying the raw material gas generated by vaporizing the liquid raw material in the vaporizing section into the processing chamber,
The vaporizing unit is
A container containing the liquid raw material;
A carrier gas supply pipe for supplying the carrier gas into the liquid raw material, the tip portion of which is immersed in the liquid raw material housed in the container;
A diffusion plate for horizontally diffusing the carrier gas supplied from the carrier gas supply pipe into the liquid raw material, wherein the carrier gas diffused horizontally is directed upward from a plurality of locations. A substrate processing apparatus, wherein a plurality of ejection holes are provided for ejection.

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