JP2004112002A5 - - Google Patents

Claims (12)

A nitride semiconductor device having an active layer made of a nitride semiconductor between a p-side layer and an n-side layer each made of a plurality of nitride semiconductor layers,
The p-side layer includes a p- side contact layer as a layer forming a p-ohmic electrode, and the p-side contact layer is formed by alternately stacking p-type nitride semiconductor layers and n-type nitride semiconductor layers,
A nitride semiconductor device, further comprising a superlattice p-type layer formed by alternately forming a first layer and a second layer between the p-side contact layer and the active layer.   The nitride semiconductor device according to claim 1, wherein the first layer is made of p-AlGaN, and the second layer is made of p-InGaN or p-GaN.   The nitride semiconductor device according to claim 1, wherein the p-type nitride semiconductor layer is doped with Mg.   4. The nitride semiconductor device according to claim 3, wherein each of the first layer and the second layer of the superlattice p-type layer is doped with a smaller amount of Mg than the p-type nitride semiconductor layer. The nitride semiconductor device according to claim 1, wherein the superlattice p-type layer and the p-side contact layer are in contact with each other.   The film thickness of the first layer and the film thickness of the second layer are any one of the film thickness of the n-type nitride semiconductor layer and the film thickness of the p-type nitride semiconductor layer. The nitride semiconductor device described in 1. The p-ohmic electrode is formed on substantially the entire surface of the p-side contact layer , and a p-pad electrode is formed on a part of the p-type ohmic electrode. The nitride semiconductor device described. A nitride semiconductor device having an active layer made of a nitride semiconductor between a p-side layer and an n-side layer each made of a plurality of nitride semiconductor layers,
The p-side layer includes a p- side contact layer as a layer forming a p-ohmic electrode, and the p-side contact layer is formed by alternately stacking p-type nitride semiconductor layers and n-type nitride semiconductor layers,
The n-side layer further includes a superlattice n-type layer formed by alternately forming a first layer and a second layer.   The nitride semiconductor device according to claim 8, wherein the first layer is made of GaN, and the second layer is made of InGaN.   10. The nitride semiconductor device according to claim 8, wherein the n-side layer has an n-type contact layer in which an n-ohmic electrode is formed at a position farther from the active layer than the superlattice n-type layer. The n-type co Ntakuto layer, a nitride semiconductor device according to claim 10, Si is made of doped GaN.   The nitride semiconductor device according to claim 1, wherein the active layer has a multiple quantum well structure including a well layer made of InGaN.