JP2004088083A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2004088083A5 JP2004088083A5 JP2003175716A JP2003175716A JP2004088083A5 JP 2004088083 A5 JP2004088083 A5 JP 2004088083A5 JP 2003175716 A JP2003175716 A JP 2003175716A JP 2003175716 A JP2003175716 A JP 2003175716A JP 2004088083 A5 JP2004088083 A5 JP 2004088083A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003175716A JP2004088083A (ja) | 2002-06-25 | 2003-06-20 | 半導体発光素子、その製造方法及びその実装方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002183919 | 2002-06-25 | ||
| JP2003175716A JP2004088083A (ja) | 2002-06-25 | 2003-06-20 | 半導体発光素子、その製造方法及びその実装方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004088083A JP2004088083A (ja) | 2004-03-18 |
| JP2004088083A5 true JP2004088083A5 (fr) | 2009-03-12 |
Family
ID=32071589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003175716A Pending JP2004088083A (ja) | 2002-06-25 | 2003-06-20 | 半導体発光素子、その製造方法及びその実装方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004088083A (fr) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8067269B2 (en) | 2005-10-19 | 2011-11-29 | Tinggi Technologies Private Limted | Method for fabricating at least one transistor |
| US8124994B2 (en) | 2006-09-04 | 2012-02-28 | Tinggi Technologies Private Limited | Electrical current distribution in light emitting devices |
| US8309377B2 (en) | 2004-04-07 | 2012-11-13 | Tinggi Technologies Private Limited | Fabrication of reflective layer on semiconductor light emitting devices |
| US8329556B2 (en) | 2005-12-20 | 2012-12-11 | Tinggi Technologies Private Limited | Localized annealing during semiconductor device fabrication |
| US8395167B2 (en) | 2006-08-16 | 2013-03-12 | Tinggi Technologies Private Limited | External light efficiency of light emitting diodes |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7244628B2 (en) | 2003-05-22 | 2007-07-17 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating semiconductor devices |
| KR20070013273A (ko) | 2004-03-15 | 2007-01-30 | 팅기 테크놀러지스 프라이빗 리미티드 | 반도체 장치의 제조 |
| US7064353B2 (en) * | 2004-05-26 | 2006-06-20 | Philips Lumileds Lighting Company, Llc | LED chip with integrated fast switching diode for ESD protection |
| JP5138873B2 (ja) | 2005-05-19 | 2013-02-06 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| CN100372137C (zh) * | 2005-05-27 | 2008-02-27 | 晶能光电（江西）有限公司 | 具有上下电极结构的铟镓铝氮发光器件及其制造方法 |
| TWI269467B (en) * | 2005-07-01 | 2006-12-21 | Epitech Technology Corp | Light-emitting diode |
| SG130975A1 (en) | 2005-09-29 | 2007-04-26 | Tinggi Tech Private Ltd | Fabrication of semiconductor devices for light emission |
| WO2007048058A2 (fr) | 2005-10-21 | 2007-04-26 | Taylor Biomass Energy, Llc | Procede et systeme de gazeification associee a une extraction de goudron in-situ |
| KR100721150B1 (ko) * | 2005-11-24 | 2007-05-22 | 삼성전기주식회사 | 수직 구조 질화갈륨계 발광다이오드 소자 |
| US7786491B2 (en) | 2006-02-02 | 2010-08-31 | Panasonic Corporation | Semiconductor light-emitting device comprising a plurality of semiconductor layers |
| JP2007243047A (ja) * | 2006-03-10 | 2007-09-20 | Matsushita Electric Works Ltd | 発光素子の製造方法 |
| JP2007258277A (ja) * | 2006-03-20 | 2007-10-04 | Matsushita Electric Works Ltd | 半導体発光素子 |
| DE102006034847A1 (de) * | 2006-04-27 | 2007-10-31 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| KR100755598B1 (ko) * | 2006-06-30 | 2007-09-06 | 삼성전기주식회사 | 질화물 반도체 발광소자 어레이 |
| JP4882611B2 (ja) * | 2006-08-30 | 2012-02-22 | 三菱化学株式会社 | 窒化物半導体発光ダイオード素子の製造方法 |
| JP2010074122A (ja) * | 2008-08-21 | 2010-04-02 | Sumitomo Electric Ind Ltd | Ｌｅｄ用ヒートシンク、ｌｅｄ用ヒートシンク前駆体、ｌｅｄ素子、ｌｅｄ用ヒートシンクの製造方法およびｌｅｄ素子の製造方法 |
| JP2010114405A (ja) * | 2008-10-06 | 2010-05-20 | Panasonic Corp | 窒化物半導体発光ダイオード |
| JP2011011366A (ja) | 2009-06-30 | 2011-01-20 | Sumitomo Electric Ind Ltd | 金属積層構造体の製造方法 |
| JP5583985B2 (ja) | 2010-02-19 | 2014-09-03 | 住友電気工業株式会社 | 金属積層構造体 |
| GB2541970B (en) | 2015-09-02 | 2020-08-19 | Facebook Tech Llc | Display manufacture |
| GB2549734B (en) | 2016-04-26 | 2020-01-01 | Facebook Tech Llc | A display |
| DE102016124646A1 (de) * | 2016-12-16 | 2018-06-21 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements |
| JP7436772B2 (ja) | 2018-12-27 | 2024-02-22 | 日亜化学工業株式会社 | 半導体装置の製造方法 |
-
2003
- 2003-06-20 JP JP2003175716A patent/JP2004088083A/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8309377B2 (en) | 2004-04-07 | 2012-11-13 | Tinggi Technologies Private Limited | Fabrication of reflective layer on semiconductor light emitting devices |
| US8067269B2 (en) | 2005-10-19 | 2011-11-29 | Tinggi Technologies Private Limted | Method for fabricating at least one transistor |
| US8329556B2 (en) | 2005-12-20 | 2012-12-11 | Tinggi Technologies Private Limited | Localized annealing during semiconductor device fabrication |
| US8395167B2 (en) | 2006-08-16 | 2013-03-12 | Tinggi Technologies Private Limited | External light efficiency of light emitting diodes |
| US8124994B2 (en) | 2006-09-04 | 2012-02-28 | Tinggi Technologies Private Limited | Electrical current distribution in light emitting devices |