JP2004071248A - プラズマディスプレイ及びその製造方法 - Google Patents
プラズマディスプレイ及びその製造方法 Download PDFInfo
- Publication number
- JP2004071248A JP2004071248A JP2002226620A JP2002226620A JP2004071248A JP 2004071248 A JP2004071248 A JP 2004071248A JP 2002226620 A JP2002226620 A JP 2002226620A JP 2002226620 A JP2002226620 A JP 2002226620A JP 2004071248 A JP2004071248 A JP 2004071248A
- Authority
- JP
- Japan
- Prior art keywords
- plasma display
- electrode
- liquid material
- manufacturing
- conductive liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 46
- 239000002245 particle Substances 0.000 claims abstract description 43
- 238000005192 partition Methods 0.000 claims abstract description 23
- 239000000126 substance Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 61
- 239000011344 liquid material Substances 0.000 claims description 37
- 239000007788 liquid Substances 0.000 claims description 17
- 239000005871 repellent Substances 0.000 claims description 12
- 230000002940 repellent Effects 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 52
- 239000002002 slurry Substances 0.000 abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 6
- 238000007599 discharging Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 239000004020 conductor Substances 0.000 description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 239000000463 material Substances 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 239000005388 borosilicate glass Substances 0.000 description 6
- 239000011812 mixed powder Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 239000003086 colorant Substances 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 239000002270 dispersing agent Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000004576 sand Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910017813 Cu—Cr Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZFZQOKHLXAVJIF-UHFFFAOYSA-N zinc;boric acid;dihydroxy(dioxido)silane Chemical compound [Zn+2].OB(O)O.O[Si](O)([O-])[O-] ZFZQOKHLXAVJIF-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
- H01J11/22—Electrodes, e.g. special shape, material or configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Gas-Filled Discharge Tubes (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002226620A JP2004071248A (ja) | 2002-08-02 | 2002-08-02 | プラズマディスプレイ及びその製造方法 |
KR10-2003-0002410A KR100502907B1 (ko) | 2002-08-02 | 2003-01-14 | 플라즈마 디스플레이 패널 및 그 제조방법 |
US10/629,793 US7348726B2 (en) | 2002-08-02 | 2003-07-30 | Plasma display panel and manufacturing method thereof where address electrodes are formed by depositing a liquid in concave grooves arranged in a substrate |
CNB031255469A CN1285094C (zh) | 2002-08-02 | 2003-08-04 | 等离子显示板及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002226620A JP2004071248A (ja) | 2002-08-02 | 2002-08-02 | プラズマディスプレイ及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2004071248A true JP2004071248A (ja) | 2004-03-04 |
Family
ID=32013907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002226620A Pending JP2004071248A (ja) | 2002-08-02 | 2002-08-02 | プラズマディスプレイ及びその製造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2004071248A (ko) |
KR (1) | KR100502907B1 (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005190897A (ja) * | 2003-12-26 | 2005-07-14 | Samsung Sdi Co Ltd | ガス放電表示装置の製造方法 |
KR100751337B1 (ko) * | 2005-06-30 | 2007-08-22 | 삼성에스디아이 주식회사 | 플라즈마 디스플레이 패널 |
KR100768188B1 (ko) * | 2005-07-04 | 2007-10-18 | 삼성에스디아이 주식회사 | 플라즈마 디스플레이 패널 |
-
2002
- 2002-08-02 JP JP2002226620A patent/JP2004071248A/ja active Pending
-
2003
- 2003-01-14 KR KR10-2003-0002410A patent/KR100502907B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20040012432A (ko) | 2004-02-11 |
KR100502907B1 (ko) | 2005-07-21 |
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