JP2003313654A5 - Film forming apparatus and film forming method - Google Patents
Film forming apparatus and film forming method Download PDFInfo
- Publication number
- JP2003313654A5 JP2003313654A5 JP2002353774A JP2002353774A JP2003313654A5 JP 2003313654 A5 JP2003313654 A5 JP 2003313654A5 JP 2002353774 A JP2002353774 A JP 2002353774A JP 2002353774 A JP2002353774 A JP 2002353774A JP 2003313654 A5 JP2003313654 A5 JP 2003313654A5
- Authority
- JP
- Japan
- Prior art keywords
- film forming
- deposition
- movable electrode
- substrate
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Description
【特許請求の範囲】
【請求項1】
真空排気手段と連結された成膜室と、
前記成膜室に設けられた蒸着源と、前記蒸着源に対向するように基板を固定するホルダと、前記蒸着源と前記基板との間に設けられる蒸着マスクと、可動式の電極とを有し、
蒸着中は前記可動式の電極は前記基板への蒸着を妨げない位置に配置され、
前記可動式の電極と前記蒸着マスクとの間でプラズマを発生する際は、前記可動式の電極は前記蒸着マスクと対向する位置に配置されることを特徴とする成膜装置。
【請求項2】
真空排気手段と連結された成膜室と、
前記成膜室に設けられた蒸着源と、前記蒸着源に対向するように基板を固定するホルダと、前記蒸着源と前記基板との間に設けられる蒸着マスクと、可動式の電極と、防着シールドと、前記防着シールドを加熱する手段とを有し、
蒸着中は、前記可動式の電極は前記基板への蒸着を妨げない位置に配置されるとともに、前記防着シールドは前記加熱する手段により前記蒸着材料の昇華温度以上に加熱され、
前記可動式の電極と前記蒸着マスクとの間でプラズマを発生する際は、前記可動式の電極は前記蒸着マスクと対向する位置に配置されることを特徴とする成膜装置。
【請求項3】
請求項1または請求項2において、前記蒸着マスクは導電性材料でなっていることを特徴とする成膜装置。
【請求項4】
請求項1乃至請求項3のいずれか一項において、前記基板と接するように前記蒸着マスクは設けられていることを特徴とする成膜装置。
【請求項5】
請求項1乃至請求項4のいずれか一項において、前記蒸着材料は有機化合物であることを特徴とする成膜装置。
【請求項6】
請求項1乃至請求項5のいずれか一項において、前記可動式の電極はメッシュ状またはシャワーヘッド状であることを特徴とする成膜装置。
【請求項7】
請求項1乃至請求項6のいずれか一項において、前記蒸着マスクまたは前記可動式の電極に高周波電源が接続されていることを特徴とする成膜装置。
【請求項8】
真空排気手段と連結された成膜室と、
前記成膜室に設けられた蒸着源と、前記蒸着源に対向するように基板を固定するホルダと、前記蒸着源と前記基板との間に設けられる蒸着マスクと、可動式の電極とを有する成膜装置を用い、
前記可動式の電極を前記基板への蒸着を妨げない位置に配置した状態で、前記蒸着源から蒸着材料を気化して、前記基板に前記蒸着材料を蒸着し、
前記蒸着終了後、前記基板を前記成膜室から取り出し、
前記可動式の電極を前記蒸着マスクと対向する位置に移動し、
前記可動式の電極と前記蒸着マスクとの間でプラズマを発生することを特徴とする成膜方法。
【請求項9】
真空排気手段と連結された成膜室と、
前記成膜室に設けられた蒸着源と、前記蒸着源に対向するように基板を固定するホルダと、前記蒸着源と前記基板との間に設けられる蒸着マスクと、可動式の電極と、防着シールドと、前記防着シールドを加熱する手段とを有する成膜装置を用い、
前記可動式の電極を前記基板への蒸着を妨げない位置に配置し、前記防着シールドを前記加熱する手段により前記蒸着材料の昇華温度以上に加熱して、前記蒸着源から蒸着材料を気化して、前記基板に前記蒸着材料を蒸着し、
前記蒸着終了後、前記基板を前記成膜室から取り出し、
前記可動式の電極を前記蒸着マスクと対向する位置に移動し、
前記可動式の電極と前記蒸着マスクとの間でプラズマを発生することを特徴とする成膜方法。
[Claims]
(1)
A film formation chamber connected to the vacuum evacuation means,
An evaporation source provided in the film formation chamber, a holder for fixing a substrate so as to face the evaporation source, an evaporation mask provided between the evaporation source and the substrate, and a movable electrode. And
During vapor deposition, the movable electrode is arranged at a position that does not hinder vapor deposition on the substrate,
When generating plasma between the movable electrode and the deposition mask, the movable electrode is arranged at a position facing the deposition mask .
(2)
A film formation chamber connected to the vacuum evacuation means,
An evaporation source provided in the film formation chamber, a holder for fixing a substrate so as to face the evaporation source, an evaporation mask provided between the evaporation source and the substrate, a movable electrode, And a means for heating the deposition shield,
During vapor deposition, the movable electrode is arranged at a position that does not hinder vapor deposition on the substrate, and the deposition prevention shield is heated to a sublimation temperature or higher of the vapor deposition material by the heating unit,
When generating plasma between the movable electrode and the deposition mask, the movable electrode is arranged at a position facing the deposition mask.
(3)
According to claim 1 or claim 2, the film forming apparatus, characterized in that the deposition mask is made of a conductive material.
(4)
4. The film forming apparatus according to claim 1, wherein the deposition mask is provided so as to be in contact with the substrate. 5.
(5)
The film forming apparatus according to claim 1, wherein the deposition material is an organic compound.
6.
The film forming apparatus according to claim 1, wherein the movable electrode has a mesh shape or a shower head shape.
7.
7. The film forming apparatus according to claim 1, wherein a high-frequency power source is connected to the evaporation mask or the movable electrode. 8.
Claim 8.
A film formation chamber connected to the vacuum evacuation means,
An evaporation source provided in the film formation chamber, a holder for fixing a substrate so as to face the evaporation source, an evaporation mask provided between the evaporation source and the substrate, and a movable electrode Using a film forming device,
In a state where the movable electrode is arranged at a position that does not hinder deposition on the substrate, a deposition material is vaporized from the deposition source, and the deposition material is deposited on the substrate.
After the deposition, the substrate is taken out of the film forming chamber,
Move the movable electrode to a position facing the vapor deposition mask,
A film formation method , wherein plasma is generated between the movable electrode and the deposition mask .
9.
A film formation chamber connected to the vacuum evacuation means,
An evaporation source provided in the film formation chamber, a holder for fixing a substrate so as to face the evaporation source, an evaporation mask provided between the evaporation source and the substrate, a movable electrode, Using a deposition apparatus having a deposition shield and a means for heating the deposition prevention shield,
The movable electrode is arranged at a position that does not hinder deposition on the substrate, and the deposition prevention shield is heated to a temperature equal to or higher than the sublimation temperature of the deposition material by the heating unit to vaporize the deposition material from the deposition source. And depositing the deposition material on the substrate;
After the deposition, the substrate is taken out of the film forming chamber,
Move the movable electrode to a position facing the vapor deposition mask,
A film formation method , wherein plasma is generated between the movable electrode and the deposition mask .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002353774A JP4294305B2 (en) | 2001-12-12 | 2002-12-05 | Film forming apparatus and film forming method |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001-379273 | 2001-12-12 | ||
JP2001379273 | 2001-12-12 | ||
JP2002-46967 | 2002-02-22 | ||
JP2002046967 | 2002-02-22 | ||
JP2002353774A JP4294305B2 (en) | 2001-12-12 | 2002-12-05 | Film forming apparatus and film forming method |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008205956A Division JP5111287B2 (en) | 2001-12-12 | 2008-08-08 | Deposition method |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2003313654A JP2003313654A (en) | 2003-11-06 |
JP2003313654A5 true JP2003313654A5 (en) | 2006-03-09 |
JP4294305B2 JP4294305B2 (en) | 2009-07-08 |
Family
ID=29553949
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002353774A Expired - Fee Related JP4294305B2 (en) | 2001-12-12 | 2002-12-05 | Film forming apparatus and film forming method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4294305B2 (en) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1723741B (en) | 2002-12-12 | 2012-09-05 | 株式会社半导体能源研究所 | Light-emitting device, film-forming method and manufacturing apparatus thereof, and cleaning method of the manufacturing apparatus |
JP4596803B2 (en) * | 2004-03-25 | 2010-12-15 | キヤノン株式会社 | Vacuum deposition equipment |
KR100830388B1 (en) * | 2004-03-29 | 2008-05-20 | 도쿄엘렉트론가부시키가이샤 | Film-forming apparatus and film-forming method |
JP5193465B2 (en) * | 2004-04-27 | 2013-05-08 | ユー・ディー・シー アイルランド リミテッド | Organic EL device manufacturing method, organic EL device, and organic EL display panel |
CN100474993C (en) | 2004-05-31 | 2009-04-01 | 株式会社爱发科 | Method for fabricating organic EL element and method for cleaning equipment for fabricating organic EL element |
KR100601332B1 (en) * | 2004-06-10 | 2006-07-13 | 박병주 | Organic semiconducting device, method and apparatus for producing the same |
US9150953B2 (en) | 2004-08-13 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device including organic semiconductor |
JP5264013B2 (en) * | 2004-08-13 | 2013-08-14 | 株式会社半導体エネルギー研究所 | Organic semiconductor layer deposition system |
JP2006218460A (en) * | 2005-02-14 | 2006-08-24 | Pioneer Electronic Corp | Method and apparatus for producing coating material-coated material |
US7948171B2 (en) * | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
EP1715075B1 (en) * | 2005-04-20 | 2008-04-16 | Applied Materials GmbH & Co. KG | Magnetic mask holder |
JP4857668B2 (en) * | 2005-09-01 | 2012-01-18 | セイコーエプソン株式会社 | Electro-optical device manufacturing apparatus, electro-optical device manufacturing method, and electro-optical device mask member |
WO2007034541A1 (en) * | 2005-09-21 | 2007-03-29 | Tadahiro Ohmi | Vacuum deposition apparatus and vacuum deposition method |
KR100851125B1 (en) * | 2006-12-01 | 2008-08-08 | 가부시키가이샤 아루박 | Process for fabricating organic el element and method for cleaning system for fabricating organic el element |
JP5095990B2 (en) * | 2006-12-22 | 2012-12-12 | 東京エレクトロン株式会社 | Substrate processing apparatus and cleaning method |
TWI353389B (en) * | 2007-02-09 | 2011-12-01 | Au Optronics Corp | Evaporation coater and evaporation source replacem |
CN101271869B (en) * | 2007-03-22 | 2015-11-25 | 株式会社半导体能源研究所 | The manufacture method of luminescent device |
KR101563237B1 (en) | 2007-06-01 | 2015-10-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Manufacturing apparatus and manufacturing method of light-emitting device |
KR20090041314A (en) | 2007-10-23 | 2009-04-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Evaporation donor substrate and method for manufacturing light-emitting device |
US8153201B2 (en) | 2007-10-23 | 2012-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing light-emitting device, and evaporation donor substrate |
US8425974B2 (en) | 2007-11-29 | 2013-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Evaporation donor substrate and method for manufacturing light-emitting device |
US7993945B2 (en) | 2008-04-11 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light-emitting device |
US7932112B2 (en) | 2008-04-14 | 2011-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light-emitting device |
JP5159689B2 (en) | 2008-04-25 | 2013-03-06 | 株式会社半導体エネルギー研究所 | Method for manufacturing light emitting device |
JP2010092761A (en) * | 2008-10-09 | 2010-04-22 | Hitachi High-Technologies Corp | Mask cleaning device for organic el, manufacturing device of organic el-display, organic el-display, and mask cleaning method for organic el |
JP5291607B2 (en) | 2008-12-15 | 2013-09-18 | 株式会社半導体エネルギー研究所 | Method for manufacturing light emitting device |
JP5302724B2 (en) * | 2009-03-18 | 2013-10-02 | 株式会社日立ハイテクノロジーズ | Organic EL mask cleaning device and organic EL mask cleaning method |
EP2230703A3 (en) | 2009-03-18 | 2012-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus and manufacturing method of lighting device |
JP4599469B1 (en) | 2009-08-31 | 2010-12-15 | 富士フイルム株式会社 | Organic electroluminescent element material and organic electroluminescent element |
JP4579343B1 (en) | 2010-04-23 | 2010-11-10 | 富士フイルム株式会社 | Organic electroluminescent element material and organic electroluminescent element |
JP2012124127A (en) * | 2010-12-10 | 2012-06-28 | Canon Inc | Vapor deposition mask, and manufacturing method for organic el display panel using the same |
JP2015004078A (en) * | 2011-10-18 | 2015-01-08 | 東京エレクトロン株式会社 | Film deposition apparatus and film deposition method |
JP5875851B2 (en) * | 2011-12-20 | 2016-03-02 | 株式会社アルバック | Thin film manufacturing method, thin film manufacturing apparatus |
JP6025591B2 (en) * | 2012-02-17 | 2016-11-16 | 株式会社半導体エネルギー研究所 | Deposition equipment |
WO2014045904A1 (en) * | 2012-09-21 | 2014-03-27 | コニカミノルタ株式会社 | Method for manufacturing glass product |
KR102086549B1 (en) * | 2013-05-06 | 2020-03-10 | 삼성디스플레이 주식회사 | Deposition source assembly |
KR102075527B1 (en) | 2013-05-16 | 2020-02-11 | 삼성디스플레이 주식회사 | Apparatus for organic layer deposition, and method for manufacturing of organic light emitting display apparatus using the same |
JP2015081365A (en) * | 2013-10-22 | 2015-04-27 | 株式会社半導体エネルギー研究所 | Film deposition device, film deposition method, and film deposition material removal method |
KR101516713B1 (en) * | 2013-11-14 | 2015-05-04 | (주)제이원텍 | In-line nitrogen furification system of oled encapsulation process |
JP2016014175A (en) * | 2014-07-02 | 2016-01-28 | 株式会社アルバック | Film deposition apparatus |
JP6335689B2 (en) * | 2014-07-02 | 2018-05-30 | 株式会社アルバック | Film forming apparatus and method for maintaining film forming apparatus |
JP6243474B2 (en) * | 2015-06-18 | 2017-12-06 | キヤノントッキ株式会社 | Vacuum deposition apparatus, method for producing deposited film, and method for producing organic electronic device |
CN113227436A (en) * | 2018-12-21 | 2021-08-06 | 应用材料公司 | Vapor deposition apparatus and method for coating a substrate in a vacuum chamber |
KR20220002361A (en) | 2019-04-30 | 2022-01-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Solid-state secondary battery manufacturing apparatus and solid-state secondary battery manufacturing method |
CN118222994B (en) * | 2024-05-24 | 2024-07-23 | 电子科技大学 | Self-cleaning high-flux magnetron sputtering equipment and operation method |
-
2002
- 2002-12-05 JP JP2002353774A patent/JP4294305B2/en not_active Expired - Fee Related
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2003313654A5 (en) | Film forming apparatus and film forming method | |
KR910007536B1 (en) | High temperature heating sputtering process | |
TW200505280A (en) | Manufacturing method and manufacturing apparatus of organic thin film | |
JP2010013676A5 (en) | ||
WO2001036704A3 (en) | Method and apparatus for forming carbonaceous film | |
WO2003035925A1 (en) | Device and method for vacuum deposition, and organic electroluminescent element provided by the device and the method | |
WO2005026409A3 (en) | Replaceable plate expanded thermal plasma apparatus and method | |
WO2007097329A1 (en) | Film forming apparatus and method for manufacturing light emitting element | |
DE60122747D1 (en) | FIELD EMISSIONING DEVICE WITH CARBONATED PEAKS | |
US20090173716A1 (en) | Lift-off patterning processes employing energetically-stimulated local removal of solid-condensed-gas layers | |
JP2003115381A5 (en) | ||
TW200602512A (en) | High thickness uniformity vaporization source | |
JP2007502917A5 (en) | ||
RU2008138423A (en) | METHOD AND DEVICE FOR PRODUCING MAGNETIC RESISTANCE ELEMENT | |
TW200847422A (en) | Method of cleaning a patterning device, method of depositing a layer system on a substrate, system for cleaning a patterning device, and coating system for depositing a layer system on a substrate | |
JP2002371351A5 (en) | ||
JPS6237365A (en) | Arc coating apparatus having arc ignition device | |
KR100830302B1 (en) | Evaporation source | |
JP2001093882A5 (en) | ||
JP2003163201A5 (en) | ||
KR20140066647A (en) | Structured evaporation using transfer mask | |
JP3647653B2 (en) | Cluster generator | |
KR100922005B1 (en) | Apparatus for vapor deposition of thin film | |
JP2019102483A (en) | Etching method and etching apparatus | |
RU2202513C1 (en) | Method of growing layer of hard carbon |