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JP2003313654A5 - Film forming apparatus and film forming method - Google Patents

Film forming apparatus and film forming method Download PDF

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Publication number
JP2003313654A5
JP2003313654A5 JP2002353774A JP2002353774A JP2003313654A5 JP 2003313654 A5 JP2003313654 A5 JP 2003313654A5 JP 2002353774 A JP2002353774 A JP 2002353774A JP 2002353774 A JP2002353774 A JP 2002353774A JP 2003313654 A5 JP2003313654 A5 JP 2003313654A5
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JP
Japan
Prior art keywords
film forming
deposition
movable electrode
substrate
mask
Prior art date
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JP2002353774A
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Japanese (ja)
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JP4294305B2 (en
JP2003313654A (en
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Priority to JP2002353774A priority Critical patent/JP4294305B2/en
Priority claimed from JP2002353774A external-priority patent/JP4294305B2/en
Publication of JP2003313654A publication Critical patent/JP2003313654A/en
Publication of JP2003313654A5 publication Critical patent/JP2003313654A5/en
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Publication of JP4294305B2 publication Critical patent/JP4294305B2/en
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Expired - Fee Related legal-status Critical Current

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Description

【特許請求の範囲】
【請求項1】
真空排気手段と連結された成膜室と、
前記成膜室に設けられた蒸着源と、前記蒸着源に対向するように基板を固定するホルダと、前記蒸着源と前記基板との間に設けられる蒸着マスクと、可動式の電極とを有し、
蒸着中は前記可動式の電極は前記基板への蒸着を妨げない位置に配置され、
前記可動式の電極と前記蒸着マスクとの間でプラズマを発生する際は、前記可動式の電極は前記蒸着マスクと対向する位置に配置されることを特徴とする成膜装置。
【請求項2】
真空排気手段と連結された成膜室と、
前記成膜室に設けられた蒸着源と、前記蒸着源に対向するように基板を固定するホルダと、前記蒸着源と前記基板との間に設けられる蒸着マスクと、可動式の電極と、防着シールドと、前記防着シールドを加熱する手段とを有し、
蒸着中は、前記可動式の電極は前記基板への蒸着を妨げない位置に配置されるとともに、前記防着シールドは前記加熱する手段により前記蒸着材料の昇華温度以上に加熱され、
前記可動式の電極と前記蒸着マスクとの間でプラズマを発生する際は、前記可動式の電極は前記蒸着マスクと対向する位置に配置されることを特徴とする成膜装置。
【請求項3】
請求項1または請求項2において、前記蒸着マスクは導電性材料でなっていることを特徴とする成膜装置。
【請求項4】
請求項1乃至請求項3のいずれか一項において、前記基板と接するように前記蒸着マスクは設けられていることを特徴とする成膜装置。
【請求項5】
請求項1乃至請求項4のいずれか一項において、前記蒸着材料は有機化合物であることを特徴とする成膜装置。
【請求項6】
請求項1乃至請求項5のいずれか一項において、前記可動式の電極はメッシュ状またはシャワーヘッド状であることを特徴とする成膜装置。
【請求項7】
請求項1乃至請求項6のいずれか一項において、前記蒸着マスクまたは前記可動式の電極に高周波電源が接続されていることを特徴とする成膜装置。
【請求項8】
真空排気手段と連結された成膜室と、
前記成膜室に設けられた蒸着源と、前記蒸着源に対向するように基板を固定するホルダと、前記蒸着源と前記基板との間に設けられる蒸着マスクと、可動式の電極とを有する成膜装置を用い、
前記可動式の電極を前記基板への蒸着を妨げない位置に配置した状態で、前記蒸着源から蒸着材料を気化して、前記基板に前記蒸着材料を蒸着し、
前記蒸着終了後、前記基板を前記成膜室から取り出し、
前記可動式の電極を前記蒸着マスクと対向する位置に移動し、
前記可動式の電極と前記蒸着マスクとの間でプラズマを発生することを特徴とする成膜方法。
【請求項9】
真空排気手段と連結された成膜室と、
前記成膜室に設けられた蒸着源と、前記蒸着源に対向するように基板を固定するホルダと、前記蒸着源と前記基板との間に設けられる蒸着マスクと、可動式の電極と、防着シールドと、前記防着シールドを加熱する手段とを有する成膜装置を用い、
前記可動式の電極を前記基板への蒸着を妨げない位置に配置し、前記防着シールドを前記加熱する手段により前記蒸着材料の昇華温度以上に加熱して、前記蒸着源から蒸着材料を気化して、前記基板に前記蒸着材料を蒸着し、
前記蒸着終了後、前記基板を前記成膜室から取り出し、
前記可動式の電極を前記蒸着マスクと対向する位置に移動し、
前記可動式の電極と前記蒸着マスクとの間でプラズマを発生することを特徴とする成膜方法。
[Claims]
(1)
A film formation chamber connected to the vacuum evacuation means,
An evaporation source provided in the film formation chamber, a holder for fixing a substrate so as to face the evaporation source, an evaporation mask provided between the evaporation source and the substrate, and a movable electrode. And
During vapor deposition, the movable electrode is arranged at a position that does not hinder vapor deposition on the substrate,
When generating plasma between the movable electrode and the deposition mask, the movable electrode is arranged at a position facing the deposition mask .
(2)
A film formation chamber connected to the vacuum evacuation means,
An evaporation source provided in the film formation chamber, a holder for fixing a substrate so as to face the evaporation source, an evaporation mask provided between the evaporation source and the substrate, a movable electrode, And a means for heating the deposition shield,
During vapor deposition, the movable electrode is arranged at a position that does not hinder vapor deposition on the substrate, and the deposition prevention shield is heated to a sublimation temperature or higher of the vapor deposition material by the heating unit,
When generating plasma between the movable electrode and the deposition mask, the movable electrode is arranged at a position facing the deposition mask.
(3)
According to claim 1 or claim 2, the film forming apparatus, characterized in that the deposition mask is made of a conductive material.
(4)
4. The film forming apparatus according to claim 1, wherein the deposition mask is provided so as to be in contact with the substrate. 5.
(5)
The film forming apparatus according to claim 1, wherein the deposition material is an organic compound.
6.
The film forming apparatus according to claim 1, wherein the movable electrode has a mesh shape or a shower head shape.
7.
7. The film forming apparatus according to claim 1, wherein a high-frequency power source is connected to the evaporation mask or the movable electrode. 8.
Claim 8.
A film formation chamber connected to the vacuum evacuation means,
An evaporation source provided in the film formation chamber, a holder for fixing a substrate so as to face the evaporation source, an evaporation mask provided between the evaporation source and the substrate, and a movable electrode Using a film forming device,
In a state where the movable electrode is arranged at a position that does not hinder deposition on the substrate, a deposition material is vaporized from the deposition source, and the deposition material is deposited on the substrate.
After the deposition, the substrate is taken out of the film forming chamber,
Move the movable electrode to a position facing the vapor deposition mask,
A film formation method , wherein plasma is generated between the movable electrode and the deposition mask .
9.
A film formation chamber connected to the vacuum evacuation means,
An evaporation source provided in the film formation chamber, a holder for fixing a substrate so as to face the evaporation source, an evaporation mask provided between the evaporation source and the substrate, a movable electrode, Using a deposition apparatus having a deposition shield and a means for heating the deposition prevention shield,
The movable electrode is arranged at a position that does not hinder deposition on the substrate, and the deposition prevention shield is heated to a temperature equal to or higher than the sublimation temperature of the deposition material by the heating unit to vaporize the deposition material from the deposition source. And depositing the deposition material on the substrate;
After the deposition, the substrate is taken out of the film forming chamber,
Move the movable electrode to a position facing the vapor deposition mask,
A film formation method , wherein plasma is generated between the movable electrode and the deposition mask .

JP2002353774A 2001-12-12 2002-12-05 Film forming apparatus and film forming method Expired - Fee Related JP4294305B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2001-379273 2001-12-12
JP2001379273 2001-12-12
JP2002-46967 2002-02-22
JP2002046967 2002-02-22
JP2002353774A JP4294305B2 (en) 2001-12-12 2002-12-05 Film forming apparatus and film forming method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008205956A Division JP5111287B2 (en) 2001-12-12 2008-08-08 Deposition method

Publications (3)

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JP2003313654A JP2003313654A (en) 2003-11-06
JP2003313654A5 true JP2003313654A5 (en) 2006-03-09
JP4294305B2 JP4294305B2 (en) 2009-07-08

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