JP2003303936A - Lead frame and manufacturing method thereof, and chip type led employing the lead frame - Google Patents
Lead frame and manufacturing method thereof, and chip type led employing the lead frameInfo
- Publication number
- JP2003303936A JP2003303936A JP2002110187A JP2002110187A JP2003303936A JP 2003303936 A JP2003303936 A JP 2003303936A JP 2002110187 A JP2002110187 A JP 2002110187A JP 2002110187 A JP2002110187 A JP 2002110187A JP 2003303936 A JP2003303936 A JP 2003303936A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- metal block
- lead frame
- island
- die pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Led Device Packages (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はリードフレームとそ
れを用いたチップ型ＬＥＤに関し、特に放熱性に優れる
高密度、高効率で表面実装化も可能なパッケージと、リ
ードフレーム及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame and a chip-type LED using the same, and more particularly to a package having excellent heat dissipation, high density, high efficiency and surface mounting, a lead frame, and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】従来から、発光ダイオード（以下、ＬＥ
Ｄと呼ぶ）は、砲弾型や表面実装型など様々な形態にパ
ッケージングされ、テレビやエアコンなどリモート・コ
ントロール用の送信部や、ＬＣＤディスプレイやプロジ
ェクションディスプレイなどの光源、あるいは一般照明
機器の補助照明に用いられるなど、広範囲な分野に利用
されている。2. Description of the Related Art Conventionally, a light emitting diode (hereinafter referred to as LE
(D) is packaged in various forms such as shell type and surface mount type, and is used as a transmitter for remote control such as TV and air conditioner, light source such as LCD display and projection display, or auxiliary lighting for general lighting equipment. Is used in a wide range of fields.
【０００３】図４は従来のチップ型ＬＥＤの断面図であ
り、１０１はＬＥＤチップ、１０２はＬＥＤチップ１０
１を載置するダイパッド部、１０３はリード電極、１０
４はＬＥＤチップとリード電極１０３とを導通する導電
性ワイヤ、１０５ａ、１０５ｂはダイパッド部１０２と
リード電極１０３から、それぞれ外側に延出する様に設
けたリード端子、１０６は支持体となる凹部が形成され
た支持基板、１０７はＬＥＤチップを保護する透光封止
樹脂である。FIG. 4 is a sectional view of a conventional chip type LED, 101 is an LED chip, and 102 is an LED chip 10.
1 is a die pad portion, 103 is a lead electrode, 10
Reference numeral 4 is a conductive wire for conducting the LED chip and the lead electrode 103, 105a and 105b are lead terminals provided so as to extend outward from the die pad portion 102 and the lead electrode 103, respectively, and 106 is a recess serving as a support. The formed support substrate 107 is a translucent sealing resin that protects the LED chip.
【０００４】詳細の構成を以下に説明する。支持基板１
０６に形成されたダイパッド部１０２に、ＧａＰ、Ｉｎ
ＧａＡｌＰなどの半導体発光層からなるＬＥＤチップ１
０１が導電性接着剤（図示せず）を介して載置され、Ｌ
ＥＤチップ１０１はＡｕなどからなる導電性ワイヤ１０
４でリード電極１０３と導通されている。支持基板１０
６の凹部に透光性と絶縁性を有したエポキシ樹脂やシリ
コン樹脂などからなる透光封止樹脂１０７が注入されＬ
ＥＤチップ１０１を保護し、チップ型ＬＥＤが形成され
ている。The detailed structure will be described below. Support substrate 1
On the die pad portion 102 formed in No. 06, GaP, In
LED chip 1 including a semiconductor light emitting layer such as GaAlP
01 is placed via a conductive adhesive (not shown), and L
The ED chip 101 is a conductive wire 10 made of Au or the like.
At 4 the lead electrode 103 is electrically connected. Support substrate 10
A light-transmissive sealing resin 107 made of epoxy resin or silicon resin having a light-transmissive property and an insulating property is injected into the concave portion 6 to form L.
A chip-type LED is formed to protect the ED chip 101.
【０００５】[0005]
【発明が解決しようとする課題】上記従来の構成では、
ＬＥＤチップ１０１は、支持基板１０６と透光封止樹脂
１０７で被覆されており放熱効率が低い。そのため、Ｌ
ＥＤチップ１０１の温度が上昇し、発光効率が低下する
という問題がある。なお、発光効率とは入力エネルギー
の可視光への変換などを光度測定から導き出されるＬＥ
Ｄの性能評価の一つである。SUMMARY OF THE INVENTION In the above conventional configuration,
The LED chip 101 is covered with the support substrate 106 and the translucent sealing resin 107, and has low heat dissipation efficiency. Therefore, L
There is a problem that the temperature of the ED chip 101 rises and the luminous efficiency decreases. The luminous efficiency is an LE derived from photometric measurements such as conversion of input energy into visible light.
This is one of the performance evaluations of D.
【０００６】本発明は上記問題を解決するためのもので
あり、ＬＥＤチップ１０１から発生する熱を効率良く放
熱することで、高輝度、高出力特性を有し、かつ小型
化、薄型化を実現でき、表面実装化も可能な放熱性に優
れた高密度、高効率のチップ型ＬＥＤを提供することを
目的とする。The present invention is intended to solve the above-mentioned problems, and by efficiently radiating the heat generated from the LED chip 101, it has high brightness and high output characteristics, and also realizes miniaturization and thinning. It is an object of the present invention to provide a high-density, high-efficiency chip-type LED that is capable of surface mounting and has excellent heat dissipation.
【０００７】[0007]
【課題を解決するための手段】上記課題を解決するため
に、本発明のリードフレームは、ダイパッド部、リード
端子、フレーム、前記ダイパッド部を前記フレームに支
持する支持リードからなり、前記ダイパッド部に貫通孔
を設けたアイランド部が形成されたものであり、その貫
通孔に光反射凹部と放熱面部が形成された銅などの熱伝
導性の良い材料で形成された金属ブロックが、前記アイ
ランド部に装着されたものである。これによれば、ＬＥ
Ｄ素子のダイパッドと放熱面部とが一体化している為、
ＬＥＤ素子の発熱を迅速に吸収し、放熱面部から吸収し
た熱を効率よく放熱するものであり、リード端子温度上
昇による、電気伝導性の低下を防ぐ。In order to solve the above problems, a lead frame of the present invention comprises a die pad portion, lead terminals, a frame, and support leads for supporting the die pad portion on the frame. A metal block formed of a material with good thermal conductivity such as copper having a light reflection concave portion and a heat dissipation surface portion formed in the through hole is formed on the island portion. It is attached. According to this, LE
Since the die pad of the D element and the heat dissipation surface are integrated,
The heat of the LED element is quickly absorbed, and the heat absorbed from the heat dissipation surface is efficiently dissipated, which prevents a decrease in electrical conductivity due to a rise in lead terminal temperature.
【０００８】次に本発明のリードフレームの製造方法
は、金属条材にフレーム、アイランド部、支持リード、
リード端子を形成する工程と、アイランド部に貫通孔を
形成する工程と、アイランド部の貫通孔内に光反射凹部
と放熱面部を有した金属ブロックを挿入する工程と、支
持リードと金属ブロックに導電性接着剤を用いて接着す
る工程とを有したものである。これによれば、ＬＥＤ素
子のダイパッドと放熱面とが一体化している為、ＬＥＤ
素子の発熱を迅速に吸収し、放熱面部から吸収した熱を
効率よく放熱するリードフレームを製造することが可能
となる。Next, in the method for manufacturing a lead frame of the present invention, a metal strip is used for the frame, the island portion, the support leads,
Forming lead terminals, forming a through hole in the island, inserting a metal block having a light reflection recess and a heat dissipation surface into the through hole of the island, and conducting the support lead and the metal block. And a step of adhering the same using a conductive adhesive. According to this, since the die pad of the LED element and the heat dissipation surface are integrated, the LED
It is possible to manufacture a lead frame that quickly absorbs the heat generated by the element and efficiently dissipates the heat absorbed from the heat dissipation surface.
【０００９】次に本発明のチップ型ＬＥＤは、貫通孔が
形成されたアイランド部とリード端子を備え、アイラン
ド部に光反射凹部と放熱面部が形成された銅などの熱伝
導性の良い材料で形成された金属ブロックが装着され、
金属ブロックの光反射凹部にＬＥＤ素子が搭載され、半
導体素子とリード端子の内方部が導通接続され、アイラ
ンド部、金属ブロック、ＬＥＤ素子、リード端子内方部
が透光性樹脂で一体形成され、光反射凹部側の面の透光
性樹脂がレンズ形状に形成されたものであり、さらに金
属ブロックの放熱面部がパッケージ基体裏面の透光性樹
脂より露出されたものである。これによれば、ＬＥＤ素
子のダイパッドと放熱面部が一体化している為、ＬＥＤ
素子の発熱をダイパッドである金属ブロックが迅速に吸
収し、放熱面部から吸収した熱を効率よく放熱する。さ
らに、放熱面部が透光性樹脂より露出しているので、取
り付け側に金属基板の使用やヒートシンクを装着すれ
ば、より放熱性に優れた、高効率、高密度で表面実装
化、薄型化が可能なチップ型ＬＥＤを実現できる。Next, the chip type LED of the present invention is provided with an island portion having a through hole and a lead terminal, and is made of a material having good thermal conductivity such as copper having a light reflecting concave portion and a heat radiating surface portion formed in the island portion. The formed metal block is attached,
The LED element is mounted in the light reflecting concave portion of the metal block, the semiconductor element and the inner portion of the lead terminal are electrically connected, and the island portion, the metal block, the LED element, and the inner portion of the lead terminal are integrally formed of a transparent resin. The light-transmitting resin on the surface on the light-reflecting concave side is formed in a lens shape, and the heat dissipation surface of the metal block is exposed from the light-transmitting resin on the back surface of the package substrate. According to this, since the die pad of the LED element and the heat dissipation surface are integrated, the LED
The metal block, which is a die pad, quickly absorbs the heat generated by the element, and the heat absorbed from the heat dissipation surface is efficiently dissipated. Furthermore, since the heat dissipation surface is exposed from the translucent resin, if you use a metal substrate or a heat sink on the mounting side, you can achieve better heat dissipation, high efficiency, high density surface mounting, and thinning. A possible chip-type LED can be realized.
【００１０】[0010]
【発明の実施の形態】以下、本発明の一実施形態につい
て図面を参照しながら説明する。図１（ａ）は本発明に
係るリードフレームを示した上面図、図１（ｂ）は図１
（ａ）のＸ−Ｘ′線に沿った断面図である。１はダイパ
ッドに貫通孔が設けられたアイランド部、２はリード端
子、３はアイランド部１とリード端子２を支持するフレ
ーム、４はアイランド部１とフレーム３を接続している
支持リード、５は熱伝導に優れた、例えばＣｕ材からな
る金属ブロック、６は金属ブロック５に形成されたＬＥ
Ｄ素子を搭載する光反射凹部、７は金属ブロック６に形
成された放熱面部である。DETAILED DESCRIPTION OF THE INVENTION An embodiment of the present invention will be described below with reference to the drawings. 1A is a top view showing a lead frame according to the present invention, and FIG.
It is sectional drawing which followed the XX 'line of (a). Reference numeral 1 is an island portion having a through hole formed in a die pad, 2 is a lead terminal, 3 is a frame that supports the island portion 1 and the lead terminal 2, 4 is a support lead that connects the island portion 1 and the frame 3, and 5 is a support lead. A metal block made of, for example, a Cu material having excellent heat conduction, 6 is an LE formed on the metal block 5.
A light reflecting concave portion for mounting the D element, and 7 are heat radiation surface portions formed on the metal block 6.
【００１１】図１（ｂ）に示したように、リードフレー
ムのアイランド部１には、金属ブロック５の放熱面部７
がアイランド部１の貫通孔から露出する様に設けられて
いる。これはＬＥＤ素子の動作時に発生する熱をリード
フレームや封止樹脂を出来る限り介さずに外部に放熱出
来るものである。また、金属ブロック５の光反射凹部に
は光反射効率の高い被膜として、例えばＡｇめっきが施
され、アイランド部１ならびにリード端子には導電性被
膜として、例えばＡｕめっきが施されている。As shown in FIG. 1B, the heat dissipation surface portion 7 of the metal block 5 is provided on the island portion 1 of the lead frame.
Are provided so as to be exposed from the through holes of the island portion 1. This allows heat generated during operation of the LED element to be radiated to the outside without passing through the lead frame or the sealing resin as much as possible. Further, the light reflection concave portion of the metal block 5 is plated with Ag having a high light reflection efficiency, for example, and the island portion 1 and the lead terminals are plated with Au as a conductive coating.
【００１２】次に、図２を用いてリードフレームの製造
工程を説明する。電気伝導性、熱伝導性などの特性が良
好で、プレス加工が容易な帯条材に順送金型等を用いて
アイランド部１、リード端子２、フレーム３、支持リー
ド４をプレス加工によって形成する（図２（ａ））。次
に、アイランド部１に貫通孔を形成する（図２
（ｂ））。これにより、金属ブロック５の放熱面部７を
アイランド部１の貫通孔から露出するものである。次
に、貫通孔が形成されたアイランド部１に導電性接着剤
（図示せず）を塗布し、金属ブロック５をダイスボンダ
ー等により挿入し接着剤を硬化する（図２（ｃ））。こ
れにより、金属ブロック５の放熱面部７をアイランド部
１の貫通孔から露出したリードフレームとなる。これは
ＬＥＤ素子の動作時に発生する熱をリードフレームや封
止樹脂を出来る限り介さずに外部に放熱出来るものであ
る。続いて金属ブロック５に形成されている光反射凹部
６にダイスボンダーでＬＥＤチップを搭載し、ボンディ
ングワイヤを張る等、従来品と同様の工程で製造するこ
とが出来る（図示せず）。また、金属ブロック５の光反
射凹部には光反射効率の高い被膜として、例えばＡｇめ
っきが施され、アイランド部１ならびにリード端子には
導電性被膜として、例えばＡｕめっきが施されている。Next, the manufacturing process of the lead frame will be described with reference to FIG. The island portion 1, the lead terminals 2, the frame 3, and the support leads 4 are formed by pressing using a progressive die or the like on a strip material that has good characteristics such as electrical conductivity and thermal conductivity and is easy to press. (FIG. 2 (a)). Next, a through hole is formed in the island portion 1 (see FIG. 2).
(B)). As a result, the heat dissipation surface portion 7 of the metal block 5 is exposed from the through hole of the island portion 1. Next, a conductive adhesive (not shown) is applied to the island portion 1 in which the through holes are formed, and the metal block 5 is inserted by a die bonder or the like to cure the adhesive (FIG. 2 (c)). As a result, the heat dissipation surface portion 7 of the metal block 5 becomes a lead frame exposed from the through hole of the island portion 1. This allows heat generated during operation of the LED element to be radiated to the outside without passing through the lead frame or the sealing resin as much as possible. Then, the LED chip is mounted on the light reflection recess 6 formed in the metal block 5 with a die bonder, and a bonding wire is stretched, so that the manufacturing process can be performed in the same manner as the conventional product (not shown). Further, the light reflection concave portion of the metal block 5 is plated with Ag having a high light reflection efficiency, for example, and the island portion 1 and the lead terminals are plated with Au as a conductive coating.
【００１３】次に、前記リードフレームを用いたチップ
型ＬＥＤの斜視図である図３（ａ）と、図３（ａ）のＹ
−Ｙ′線に沿った断面図である図３（ｂ）を用いて説明
する。８はＬＥＤ素子、９はＬＥＤ素子とリード端子２
を導通接続するワイヤ、１０はＬＥＤチップ８の前面に
は光学レンズを形成し、リード端子２の内方部を一体成
形してパッケージングし、アイランド部１及びリード端
子２の下方にはパッケージ基体を形成している透光封止
樹脂である。3A, which is a perspective view of a chip-type LED using the lead frame, and Y in FIG. 3A.
This will be described with reference to FIG. 3B, which is a sectional view taken along the line Y '. 8 is an LED element, 9 is an LED element and a lead terminal 2
Wires 10 for electrically connecting the LED chips 8 form an optical lens on the front surface of the LED chip 8, the inner portion of the lead terminal 2 is integrally molded and packaged, and the package base is formed below the island portion 1 and the lead terminal 2. It is a translucent sealing resin that forms
【００１４】詳細な構成を以下に説明する。リードフレ
ームにはアイランド部１及び多数のリード端子２を配置
している。アイランド部１には多数の光反射凹部を形成
した金属ブロック５を挿通する貫通孔が形成されてい
る。金属ブロック５はアイランド部１の貫通孔に挿通さ
れ、段付部分またはブロック自体を支持する機構を有す
る部分で固定され、Ａｇろう（図示せず）で接着されて
いる。金属ブロック５の各光反射凹部にはＬＥＤ素子８
を搭載し、リード端子２の内方部とそれぞれワイヤ９に
より導通接続されている。そしてアイランド部１、金属
ブロック５、ＬＥＤ素子８、ワイヤ９、リード端子２の
内方部を透光封止樹脂１０により一体成形してパッケー
ジングしている。透光封止樹脂１０は、ＬＥＤ素子８の
前面には光学レンズとなる様に形成している。アイラン
ド部１の貫通孔に挿通された金属ブロック５の放熱面部
７を透光封止樹脂パッケージ基体裏面に露出する。これ
によれば、ＬＥＤ素子８の発熱を迅速に吸収し、放熱面
部７から吸収した熱を効率よく放熱する。金属ブロック
５は熱伝導率の高い、例えば銅で形成することにより放
熱性を向上することができる。The detailed structure will be described below. The island portion 1 and a large number of lead terminals 2 are arranged on the lead frame. Through holes are formed in the island portion 1 for inserting the metal blocks 5 in which a large number of light reflecting concave portions are formed. The metal block 5 is inserted into the through hole of the island portion 1, is fixed at a stepped portion or a portion having a mechanism for supporting the block itself, and is bonded by Ag brazing (not shown). The LED element 8 is provided in each light reflecting recess of the metal block 5.
Are mounted and are electrically connected to the inner portions of the lead terminals 2 by wires 9. Then, the inner portion of the island portion 1, the metal block 5, the LED element 8, the wire 9, and the lead terminal 2 is integrally molded with the translucent sealing resin 10 for packaging. The translucent sealing resin 10 is formed on the front surface of the LED element 8 so as to serve as an optical lens. The heat dissipation surface portion 7 of the metal block 5 inserted into the through hole of the island portion 1 is exposed on the rear surface of the translucent sealing resin package substrate. According to this, the heat generated by the LED element 8 is quickly absorbed, and the heat absorbed from the heat dissipation surface portion 7 is efficiently dissipated. By forming the metal block 5 with high thermal conductivity, for example, copper, heat dissipation can be improved.
【００１５】（表１）にＬＥＤ素子４個実装状態での発
光効率を確認したデータを示す。従来の砲弾型ＬＥＤで
は発光３分で発光効率が７９％まで低下する。本願発明
のチップ型ＬＥＤ単体では発光３分経過後に９１％まで
低下するが、裏面放熱面部にヒートシンクを接着する
と、３分経過以後は９１％以下の発光効率低下は確認さ
れない。Table 1 shows data for confirming the luminous efficiency in the state where four LED elements are mounted. With a conventional bullet-type LED, the light emission efficiency drops to 79% after 3 minutes of light emission. With the chip-type LED alone of the present invention, the light emission decreases to 91% after 3 minutes have passed, but when a heat sink is attached to the heat radiation surface of the back surface, a decrease in emission efficiency of 91% or less cannot be confirmed after 3 minutes have elapsed.
【００１６】[0016]
【表１】 [Table 1]
【００１７】透光封止樹脂１０は、ＬＥＤ素子８の前面
には光学レンズとなる様に形成している。各ＬＥＤ素子
８からの出力光は光学レンズを通過して合成出力光とし
て外部に出射されるため、高出力の出射光を指向性よく
出射することができる。パッケージ基体の側面からはリ
ード端子２の外方部が突出し、適宜フォーミングするこ
とで表面実装化できる。The translucent sealing resin 10 is formed on the front surface of the LED element 8 so as to serve as an optical lens. Since the output light from each LED element 8 passes through the optical lens and is output to the outside as a combined output light, a high-power output light can be output with good directivity. The outer portion of the lead terminal 2 protrudes from the side surface of the package substrate, and can be surface-mounted by appropriately forming.
【００１８】アイランド部１及びリード端子２には、例
えば厚さ０．２５ｍｍ程度の鉄、銅またはこれらの合金
などの金属材料を用いている。４個実装でのＬＥＤパッ
ケージの外形寸法は、縦８．０ｍｍ、横４．８ｍｍ、高
さ２．０ｍｍと小型化を実現している。For the island portion 1 and the lead terminals 2, for example, a metal material having a thickness of about 0.25 mm such as iron, copper or alloys thereof is used. The outer dimensions of the four-package LED package are 8.0 mm in length, 4.8 mm in width, and 2.0 mm in height, thus achieving miniaturization.
【００１９】本実施の形態では、一般補助照明用のＬＥ
Ｄ装置を用いた例を挙げて説明したが、表示用やリモー
トコントロール用など他の用途のＬＥＤ装置などにも用
いることができる。ＬＥＤチップについても、可視光Ｌ
ＥＤチップに限らず赤外線ＬＥＤチップなどを用いても
よい。In this embodiment, the LE for general auxiliary lighting is used.
Although the example using the D device has been described, the present invention can also be used for an LED device for other purposes such as display and remote control. Also for LED chips, visible light L
An infrared LED chip or the like may be used instead of the ED chip.
【００２０】[0020]
【発明の効果】以上のように本発明によれば、高輝度、
高出力特性を有し、かつ小型化、薄型化を実現でき、表
面実装化も可能な放熱性に優れた高密度、高効率のチッ
プ型ＬＥＤを提供することができる。As described above, according to the present invention, high brightness,
It is possible to provide a high-density, high-efficiency chip-type LED that has high output characteristics, can be made smaller and thinner, and can be surface-mounted, and has excellent heat dissipation.
【図１】（ａ）は本発明の一実施形態によるリードフレ
ームの上面図
（ｂ）は（ａ）のＸ−Ｘ′線に沿った断面図FIG. 1A is a top view of a lead frame according to an embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along line XX ′ of FIG.
【図２】本発明の一実施形態によるリードフレームの製
造工程断面図FIG. 2 is a sectional view of a lead frame manufacturing process according to an embodiment of the present invention.
【図３】（ａ）は本発明の一実施形態によるチップ型Ｌ
ＥＤの斜視図
（ｂ）は（ａ）のＹ−Ｙ′線に沿った断面図FIG. 3A is a chip type L according to an embodiment of the present invention.
A perspective view of the ED is a cross-sectional view taken along line YY 'of (a).
【図４】従来のチップ型ＬＥＤの断面図FIG. 4 is a sectional view of a conventional chip type LED.
１ アイランド部 ２ リード端子 ３ フレーム ４ 支持リード ５ 金属ブロック ６ 光反射凹部 ７ 放熱面部 ８ ＬＥＤ素子 ９ ワイヤ １０ 透光封止樹脂 １０１ ＬＥＤ素子 １０２ ダイパッド部 １０３ リード電極 １０４ 導電性ワイヤ １０５ａ リード端子 １０５ｂ リード端子 １０６ 支持基板 １０７ 透光封止樹脂 1 island section 2 lead terminals 3 frames 4 Support leads 5 metal blocks 6 Light reflection recess 7 Heat dissipation surface 8 LED element 9 wires 10 Translucent sealing resin 101 LED element 102 die pad 103 lead electrode 104 conductive wire 105a lead terminal 105b lead terminal 106 support substrate 107 translucent sealing resin
フロントページの続き (72)発明者 水上 実 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Ｆターム(参考） 5F041 AA33 DA07 DA13 DA16 DA19 DA25 DA33 DA36 DA43 DA57 5F067 AA03 AB02 BD02 CA03 DA05 DC17 Continued front page (72) Inventor Minoru Mizukami 1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric Sangyo Co., Ltd. F-term (reference) 5F041 AA33 DA07 DA13 DA16 DA19 DA25 DA33 DA36 DA43 DA57 5F067 AA03 AB02 BD02 CA03 DA05 DC17
Claims (8)
前記ダイパッド部を前記フレームに支持する支持リード
からなるリードフレームにおいて、前記ダイパッド部に
貫通孔を設けたアイランド部が形成されたことを特徴と
するリードフレーム。1. A die pad portion, a lead terminal, a frame,
A lead frame comprising a support lead for supporting the die pad portion on the frame, wherein an island portion having a through hole is formed in the die pad portion.
ブロックが、前記アイランド部に装着されたことを特徴
とする請求項１記載のリードフレーム。2. The lead frame according to claim 1, wherein a metal block having a light reflection concave portion and a heat radiation surface portion is mounted on the island portion.
が形成され、前記アイランド部と前記リード端子に導電
性被膜が形成されたことを特徴とする請求項２記載のリ
ードフレーム。3. The lead frame according to claim 2, wherein a coating having a high light reflection efficiency is formed on the light reflecting concave portion, and a conductive coating is formed on the island portion and the lead terminal.
持リード、リード端子を形成する工程と、前記ダイパッ
ド部に貫通孔を設けたアイランド部を形成する工程と、
前記ダイパッド部の貫通孔内に金属ブロックを挿入する
工程と、前記支持リードと前記金属ブロックに導電性接
着剤を用いて接着する工程とを有したことを特徴とする
リードフレームの製造方法。4. A step of forming a frame, a die pad portion, a support lead and a lead terminal on a metal strip, and a step of forming an island portion having a through hole in the die pad portion,
A method of manufacturing a lead frame, comprising: a step of inserting a metal block into the through hole of the die pad portion; and a step of adhering the support lead and the metal block with a conductive adhesive.
持リード、リード端子を形成する工程と、前記アイラン
ド部の貫通孔内に金属ブロックを挿入する工程と、前記
支持リードと前記金属ブロックに導電性接着剤を用いて
接着する工程とを有したことを特徴とするリードフレー
ムの製造方法。5. A step of forming a frame, an island portion, a support lead, and a lead terminal on a metal strip, a step of inserting a metal block into a through hole of the island portion, and a conductive material for the support lead and the metal block. And a step of adhering with a conductive adhesive.
部を有したことを特徴とする請求項４、請求項５記載の
リードフレームの製造方法。6. The method of manufacturing a lead frame according to claim 4, wherein the metal block has a light reflecting concave portion and a heat radiating surface portion.
ド端子を備え、前記アイランド部に光反射凹部と放熱面
部が形成された金属ブロックが挿着され、前記金属ブロ
ックの光反射凹部にＬＥＤ素子が搭載され、前記半導体
素子と前記リード端子の内方部が導電性ワイヤなどで接
続され、前記アイランド部、前記金属ブロック、前記Ｌ
ＥＤ素子、前記リード端子内方部が透光性樹脂で一体形
成され、前記光反射凹部側の透光性樹脂がレンズ形状に
形成されたことを特徴とするチップ型ＬＥＤ。7. An LED element comprising an island portion having a through hole and a lead terminal, and a metal block having a light reflection concave portion and a heat dissipation surface portion formed therein is inserted into the island portion, and the LED element is fitted in the light reflection concave portion of the metal block. Is mounted, the semiconductor element and the inner portion of the lead terminal are connected by a conductive wire or the like, and the island portion, the metal block, the L
A chip-type LED, wherein an ED element and an inner portion of the lead terminal are integrally formed of a light-transmissive resin, and the light-transmissive resin on the light reflection recess side is formed in a lens shape.
性樹脂より、露出されたことを特徴とする請求項７記載
のチップ型ＬＥＤ。8. The chip-type LED according to claim 7, wherein the heat dissipation surface of the metal block is exposed from the translucent resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002110187A JP3770192B2 (en) | 2002-04-12 | 2002-04-12 | Chip-type LED lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002110187A JP3770192B2 (en) | 2002-04-12 | 2002-04-12 | Chip-type LED lead frame |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003303936A true JP2003303936A (en) | 2003-10-24 |
| JP3770192B2 JP3770192B2 (en) | 2006-04-26 |
Family
ID=29393412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002110187A Expired - Fee Related JP3770192B2 (en) | 2002-04-12 | 2002-04-12 | Chip-type LED lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3770192B2 (en) |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2420221A (en) * | 2004-11-12 | 2006-05-17 | Unity Opto Technology Co Ltd | Semiconductor light emitting diode package with heat sink |
| JP2006173561A (en) * | 2004-12-16 | 2006-06-29 | Seoul Semiconductor Co Ltd | Lead frame having heat sink supporting ring, manufacturing method for light emitting diode package using it, and light emitting diode package manufactured by using it |
| WO2006106901A1 (en) * | 2005-04-01 | 2006-10-12 | Matsushita Electric Industrial Co., Ltd. | Led component and method for manufacturing same |
| JP2006339653A (en) * | 2005-06-03 | 2006-12-14 | Samsung Electro-Mechanics Co Ltd | High power led package, and method of manufacturing high power led package |
| JP2007123777A (en) * | 2005-10-31 | 2007-05-17 | Sharp Corp | Semiconductor light-emitting apparatus |
| EP1816688A2 (en) * | 2006-02-02 | 2007-08-08 | LG Electronics Inc. | Lead frame and light emitting device package using the same |
| JP2008091161A (en) * | 2006-09-29 | 2008-04-17 | Matsushita Electric Works Ltd | Led lighting system |
| JP2008512867A (en) * | 2004-09-10 | 2008-04-24 | ソウル セミコンダクター カンパニー リミテッド | Light emitting diode package with multiple mold resin |
| JP2008123703A (en) * | 2006-11-08 | 2008-05-29 | Matsushita Electric Works Ltd | Photoirradiation apparatus |
| JP2008300694A (en) * | 2007-05-31 | 2008-12-11 | Nichia Corp | Light-emitting device, resin-molded body constituting same, and method of manufacturing them |
| US7579628B2 (en) | 2004-10-18 | 2009-08-25 | Sharp Kabushiki Kaisha | Backlight device for liquid crystal display including a plurality of light emitting diodes within their own concaves aligned in a straight line within a larger concave |
| US7678592B2 (en) | 2005-02-17 | 2010-03-16 | Samsung Electro-Mechanics Co., Ltd. | LED housing and fabrication method thereof |
| US7748873B2 (en) | 2004-10-07 | 2010-07-06 | Seoul Semiconductor Co., Ltd. | Side illumination lens and luminescent device using the same |
| JP2010212513A (en) * | 2009-03-11 | 2010-09-24 | Japan Aviation Electronics Industry Ltd | Optical semiconductor device, socket, and optical semiconductor unit |
| US7846752B2 (en) | 2005-02-17 | 2010-12-07 | Samsung Electro-Mechanics., Ltd. | High power LED housing and fabrication method thereof |
| EP2515354A1 (en) * | 2010-01-29 | 2012-10-24 | Japan Aviation Electronics Industry, Limited | Led device, manufacturing method thereof, and light-emitting device |
| KR101297404B1 (en) * | 2006-12-29 | 2013-08-19 | 서울반도체 주식회사 | Heat sink for led package and led package using the same |
| US9502624B2 (en) | 2006-05-18 | 2016-11-22 | Nichia Corporation | Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010225720A (en) * | 2009-03-23 | 2010-10-07 | Mitsubishi Electric Corp | Power module |
-
2002
- 2002-04-12 JP JP2002110187A patent/JP3770192B2/en not_active Expired - Fee Related
Cited By (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008512867A (en) * | 2004-09-10 | 2008-04-24 | ソウル セミコンダクター カンパニー リミテッド | Light emitting diode package with multiple mold resin |
| US7901113B2 (en) | 2004-10-07 | 2011-03-08 | Seoul Semiconductor Co., Ltd. | Side illumination lens and luminescent device using the same |
| US7748873B2 (en) | 2004-10-07 | 2010-07-06 | Seoul Semiconductor Co., Ltd. | Side illumination lens and luminescent device using the same |
| US7977689B2 (en) | 2004-10-18 | 2011-07-12 | Sharp Kabushiki Kaisha | Backlight device for liquid crystal display including a plurality of light emitting diodes within their own concaves aligned in a straight line within a larger concave |
| US7579628B2 (en) | 2004-10-18 | 2009-08-25 | Sharp Kabushiki Kaisha | Backlight device for liquid crystal display including a plurality of light emitting diodes within their own concaves aligned in a straight line within a larger concave |
| GB2420221A (en) * | 2004-11-12 | 2006-05-17 | Unity Opto Technology Co Ltd | Semiconductor light emitting diode package with heat sink |
| GB2420221B (en) * | 2004-11-12 | 2009-09-09 | Unity Opto Technology Co Ltd | Solid-state semiconductor light emitting device |
| EP1825524A4 (en) * | 2004-12-16 | 2010-06-16 | Seoul Semiconductor Co Ltd | Leadframe having a heat sink supporting ring, fabricating method of a light emitting diodepackage using the same and light emitting diodepackage fabbricated by the method |
| JP2006173561A (en) * | 2004-12-16 | 2006-06-29 | Seoul Semiconductor Co Ltd | Lead frame having heat sink supporting ring, manufacturing method for light emitting diode package using it, and light emitting diode package manufactured by using it |
| EP1825524A1 (en) * | 2004-12-16 | 2007-08-29 | Seoul Semiconductor Co., Ltd. | Leadframe having a heat sink supporting ring, fabricating method of a light emitting diodepackage using the same and light emitting diodepackage fabbricated by the method |
| JP2009206529A (en) * | 2004-12-16 | 2009-09-10 | Seoul Semiconductor Co Ltd | Lead frame having heat sink supporting ring, manufacturing method for light emitting diode package using the frame, and light emitting diode package manufactured by using the method |
| JP4523496B2 (en) * | 2004-12-16 | 2010-08-11 | ソウル半導体株式会社 | Light emitting diode package manufacturing method and light emitting diode package manufactured using the same |
| US7678592B2 (en) | 2005-02-17 | 2010-03-16 | Samsung Electro-Mechanics Co., Ltd. | LED housing and fabrication method thereof |
| US7846752B2 (en) | 2005-02-17 | 2010-12-07 | Samsung Electro-Mechanics., Ltd. | High power LED housing and fabrication method thereof |
| WO2006106901A1 (en) * | 2005-04-01 | 2006-10-12 | Matsushita Electric Industrial Co., Ltd. | Led component and method for manufacturing same |
| US7875476B2 (en) | 2005-06-03 | 2011-01-25 | Samsung Led Co., Ltd. | High power LED package and fabrication method thereof |
| JP2006339653A (en) * | 2005-06-03 | 2006-12-14 | Samsung Electro-Mechanics Co Ltd | High power led package, and method of manufacturing high power led package |
| US7626250B2 (en) | 2005-06-03 | 2009-12-01 | Samsung Electro-Mechanics Co., Ltd. | High power LED package and fabrication method thereof |
| JP2007123777A (en) * | 2005-10-31 | 2007-05-17 | Sharp Corp | Semiconductor light-emitting apparatus |
| EP1816688A3 (en) * | 2006-02-02 | 2014-06-18 | LG Electronics Inc. | Lead frame and light emitting device package using the same |
| EP1816688A2 (en) * | 2006-02-02 | 2007-08-08 | LG Electronics Inc. | Lead frame and light emitting device package using the same |
| US9502624B2 (en) | 2006-05-18 | 2016-11-22 | Nichia Corporation | Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same |
| US9634204B2 (en) | 2006-05-18 | 2017-04-25 | Nichia Corporation | Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same |
| US11631790B2 (en) | 2006-05-18 | 2023-04-18 | Nichia Corporation | Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same |
| US10971656B2 (en) | 2006-05-18 | 2021-04-06 | Nichia Corporation | Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same |
| US10686102B2 (en) | 2006-05-18 | 2020-06-16 | Nichia Corporation | Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same |
| US10263161B2 (en) | 2006-05-18 | 2019-04-16 | Nichia Corporation | Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same |
| US9929318B2 (en) | 2006-05-18 | 2018-03-27 | Nichia Corporation | Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same |
| JP2008091161A (en) * | 2006-09-29 | 2008-04-17 | Matsushita Electric Works Ltd | Led lighting system |
| JP2008123703A (en) * | 2006-11-08 | 2008-05-29 | Matsushita Electric Works Ltd | Photoirradiation apparatus |
| JP4506743B2 (en) * | 2006-11-08 | 2010-07-21 | パナソニック電工株式会社 | Light irradiation device |
| KR101297404B1 (en) * | 2006-12-29 | 2013-08-19 | 서울반도체 주식회사 | Heat sink for led package and led package using the same |
| JP2008300694A (en) * | 2007-05-31 | 2008-12-11 | Nichia Corp | Light-emitting device, resin-molded body constituting same, and method of manufacturing them |
| US8344622B2 (en) | 2007-05-31 | 2013-01-01 | Nichia Corporation | Resin molding device |
| JP2010212513A (en) * | 2009-03-11 | 2010-09-24 | Japan Aviation Electronics Industry Ltd | Optical semiconductor device, socket, and optical semiconductor unit |
| US9152755B2 (en) | 2009-03-11 | 2015-10-06 | Japan Aviation Electronics Industry, Limited | Optical semiconductor device, socket, and optical semiconductor unit |
| US9425372B2 (en) | 2010-01-29 | 2016-08-23 | Japan Aviation Electronics Industry, Limited | LED device, method of manufacturing the same, and light-emitting apparatus |
| EP2854187A1 (en) * | 2010-01-29 | 2015-04-01 | Japan Aviation Electronics Industry, Ltd. | LED device, method of manufacturing the same, and light-emitting apparatus |
| EP2515354A4 (en) * | 2010-01-29 | 2013-09-11 | Japan Aviation Electron | Led device, manufacturing method thereof, and light-emitting device |
| EP2515354A1 (en) * | 2010-01-29 | 2012-10-24 | Japan Aviation Electronics Industry, Limited | Led device, manufacturing method thereof, and light-emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3770192B2 (en) | 2006-04-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10677417B2 (en) | Package for light emitting device and method for packaging the same | |
| JP4360858B2 (en) | Surface mount type LED and light emitting device using the same | |
| JP5038623B2 (en) | Optical semiconductor device and manufacturing method thereof | |
| JP3976063B2 (en) | Light emitting device | |
| US7183588B2 (en) | Light emission device | |
| JP2003303936A (en) | Lead frame and manufacturing method thereof, and chip type led employing the lead frame | |
| US20080191235A1 (en) | Light emitting diode structure with high heat dissipation | |
| US20080061314A1 (en) | Light emitting device with high heat-dissipating capability | |
| US7615799B2 (en) | Light-emitting diode package structure | |
| JP2008502159A (en) | Power light emitting die package having a reflective lens and method of manufacturing | |
| JP2006049442A (en) | Semiconductor light emission device and its manufacturing method | |
| JP2004265986A (en) | High luminance light emitting element, and method for manufacturing the same and light emitting device using the same | |
| JP2006005290A (en) | Light emitting diode | |
| TW200818536A (en) | Light emitting diode package structure | |
| JP2006093470A (en) | Lead frame, light-emitting device, and manufacturing method thereof | |
| US20090289274A1 (en) | Package structure of light emitting diode and method of manufacturing the same | |
| JP2004207367A (en) | Light emitting diode and light emitting diode arrangement plate | |
| US20100044727A1 (en) | Led package structure | |
| JP3938100B2 (en) | LED lamp and LED lighting fixture | |
| KR100610275B1 (en) | Power LED package and method for producing the same | |
| WO2011083703A1 (en) | Led module device and method for manufacturing same | |
| KR20080079745A (en) | Led package base having double heat sink structure of lead-flame and heat sink plate and method of fabricating thereof | |
| KR101022113B1 (en) | High efficiency power led module and its manufacture method | |
| JP4010340B2 (en) | Light emitting device | |
| JP2000294838A (en) | Chip type light emitting diode array |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040830 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050614 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050705 |
|
| RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20050706 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050902 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20051018 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20051216 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20060117 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20060130 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100217 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100217 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110217 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120217 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130217 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130217 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140217 Year of fee payment: 8 |
|
| LAPS | Cancellation because of no payment of annual fees |