JP2003344839A - Transflective liquid crystal device and electronic equipment using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a transflective liquid crystal device displaying a high- definition picture in both transmissive display region and reflective display region and electronic equipment using the same. <P>SOLUTION: In the transflective liquid crystal device 100 a thin color filter 241 for transmissive display is formed on the transmissive display region 100c and a thick color filter 242 for reflective display is formed on the reflective display region 100b on the lower layer side of a counter electrode 21. For the reason stated above, layer thickness d of a liquid crystal layer 50 in the reflective display region 100b is considerably thinner than layer thickness d of a liquid crystal layer 50 in the transmissive display region 100c. A chromatic range of the color filter 241 for transmissive display is made to be wider than that of the color filter 242 for reflective display by adjusting kinds and compounded quantities of color materials. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transflective liquid crystal device having a reflective display region and a transmissive display region in one pixel, and an electronic apparatus having the same.

[0002]

2. Description of the Related Art Among various liquid crystal devices, one capable of displaying an image in both a transmissive mode and a reflective mode is called a semi-transmissive reflective liquid crystal device, and is used in every scene.

Among such transflective liquid crystal devices,
In the active matrix type transflective liquid crystal device,
As shown in FIG. 21, the transparent pixel electrode 9a (first
Transparent electrode) and pixel switching TFT (Thin Film Transistor)
Or) 30 on which the TFT array substrate 10 (first transparent substrate) is formed, a counter electrode 21 (second transparent electrode), and a counter substrate 20 (second) on which a color filter 24 is formed.
Transparent substrate) and a liquid crystal layer 50 held between these substrates 10 and 20. Here, the substrate interval between the TFT array substrate 10 and the counter substrate 20 is T after the gap material 5 having a predetermined particle diameter is dispersed on the surface of one of the substrates.
It is defined by adhering the FT array substrate 10 and the counter substrate 20 via a sealant (not shown).

In the liquid crystal device having the above structure, T
The FT array substrate 10 has a pixel electrode 9 a and a counter electrode 21.
A light reflection layer 8a forming a reflection display area 100b is formed in the pixel 100 opposed to and the remaining area (light transmission window 8d) where the light reflection layer 8a is not formed becomes a transmission display area 100c. There is.

Therefore, of the light emitted from the backlight device (not shown) arranged on the back side of the TFT array substrate 10, the light incident on the transmissive display region 100c is the TFT as shown by the arrow LB. The light enters the liquid crystal layer 50 from the array substrate 101 side, is optically modulated by the liquid crystal layer 50, and then is emitted as transmission display light from the counter substrate 20 side to display an image (transmission mode).

Of the external light incident from the counter substrate 20 side, the light incident on the reflective display area 100b is indicated by the arrow L.
As shown by A, it reaches the reflective layer 8a through the liquid crystal layer 50, is reflected by the reflective layer 8a, is again emitted through the liquid crystal layer 50 from the side of the counter substrate 20 as reflective display light to display an image. Yes (reflection mode).

As a conventional example, for example, JP-A-11-0
The method described in Japanese Patent No. 44814 is known.

[0008]

When such a light modulation is performed, if the twist angle of the liquid crystal is set to be small, the change in the polarization state is the product of the refractive index difference Δn and the layer thickness d of the liquid crystal layer 50. Since it is a function of (retardation Δn · d), if this value is optimized, display with good visibility can be performed.

However, in the transflective liquid crystal device, the transmissive display light passes through the liquid crystal layer 50 only once and is emitted, whereas the reflective display light passes through the liquid crystal layer 50.
Since it will pass through once, it is difficult to optimize the retardation Δn · d for both the transmissive display light and the reflective display light. Therefore, when the layer thickness d of the liquid crystal layer 50 is set so that the display in the reflective mode has good visibility, the display in the transmissive mode is sacrificed. vice versa,
When the layer thickness d of the liquid crystal layer 50 is set so that the display in the transmissive mode has good visibility, the display in the reflective mode is sacrificed.

In view of the above problems, the present invention provides a transflective liquid crystal device capable of displaying a high-quality image in both the transmissive display region and the reflective display region, and an electronic device using the same. To do.

[0011]

In order to solve the above problems, according to the present invention, a first transparent substrate having a surface on which first transparent electrodes and pixel switching elements are formed, and the first transparent substrate A second transparent substrate having a second transparent electrode formed on the surface side facing the transparent electrode, and a liquid crystal layer held between the first transparent substrate and the second transparent substrate. On the side of the first transparent substrate, a reflective display area is formed in a pixel in which the first transparent electrode and the second transparent electrode face each other, and the remaining area of the pixel is defined as a transmissive display area. In the semi-transmissive reflective liquid crystal device having a light reflective layer formed thereon, the first transparent substrate and the second transparent substrate have a layer thickness of the liquid crystal layer in the reflective display region and the liquid crystal in the transmissive display region. Formed to be thinner than the layer thickness It is characterized in.

For example, on the liquid crystal layer side surface of the first transparent substrate, the total thickness of the film formed under the first electrode is thicker in the reflective display area than in the transmissive display area. ing. In addition, on the liquid crystal layer side surface of the second transparent substrate, the total thickness of the film formed under the second electrode is
The reflective display region may be thicker than the transmissive display region.

In the transflective liquid crystal device according to the present invention, the transmissive display light passes through the liquid crystal layer only once and is emitted, whereas the reflective display light passes through the liquid crystal layer twice. However, the layer thickness of the liquid crystal layer in the reflective display area is
It is considerably thinner than the liquid crystal layer in the transmissive display region.
Therefore, in both the transmitted display light and the reflected display light, it is possible to optimize the retardation,
High-quality display can be performed.

In such a configuration, for example, the liquid crystal layer in the reflective display area is formed on the liquid crystal layer side surface of one of the first transparent substrate and the second transparent substrate. The layer thickness adjusting layer may be formed so that the layer thickness is smaller than that of the liquid crystal layer in the transmissive display region.

Here, it is preferable that the layer thickness adjusting layer is formed on the second transparent substrate. That is, when the first transparent substrate is the TFT array substrate, the TFT
On the array substrate side, a photolithography process is performed to form a pixel switching TFT and a light reflection layer. Therefore, if a thick layer thickness adjustment layer is formed on the TFT array substrate, a remarkable height difference or a step difference may occur. Occurs, and as a result,
Since exposure accuracy and the like in the photolithography process are remarkably lowered to cause step breakage and film residue, there arises a problem that reliability and yield of the liquid crystal device are lowered. However, in the present invention, the layer thickness adjusting layer is formed on the side of the second transparent substrate, that is, on the second transparent substrate on which the pixel switching element is not formed, so that the layer thickness of the liquid crystal layer in the reflective display region is reduced. It is made thinner than the layer thickness of the liquid crystal layer in the transmissive display region. Therefore, even if the layer thickness adjusting layer is provided, the exposure accuracy does not decrease in the photolithography process for forming the pixel switching element on the first transparent substrate. Therefore, it is possible to provide a transflective liquid crystal device having high reliability and high display quality.

In the present invention, the layer thickness adjusting layer is, for example, a transparent layer selectively formed in the reflective display region of the pixel, or thick in the reflective display region, and the reflective layer in the transmissive display region. It is a transparent layer formed thinner than the display area.

In the present invention, when performing color display, a color filter is formed in the pixel on the surface of the second transparent substrate on the liquid crystal layer side.

When forming such a color filter,
A color filter for transmissive display is formed on one of the upper layer side and the lower layer side of the transparent layer in the transmissive display area of the pixel, and the transmissive display is performed on the transparent layer in the reflective display area. It is preferable that the reflective display color filter is formed on the same side as the display color filter.

On the liquid crystal layer side surface of the second substrate, a transmissive display color filter is provided in one of the upper side and the lower layer side of the transparent layer in the transmissive display area of the pixel. In the reflective display area, a reflective display color filter may be formed on the opposite side of the transparent layer from the transmissive display color filter.

In the present invention, the transmissive display color filter preferably has a wider chromaticity range than the reflective display color filter. In the transflective liquid crystal device, the transmissive display light passes through the color filter only once and is emitted, whereas the reflective display light passes through the color filter twice. If the color filter has a wider chromaticity range than that of the reflective display color filter, an image can be displayed with the same hue in both the transmissive display light and the reflective display light.

In the present specification, "wide chromaticity range" means that the area of a color triangle represented by, for example, the CIE1931 rgb color system chromaticity diagram is large, and corresponds to a deep hue. There is.

In the present invention, it is preferable that the transmissive display color filter has a wide chromaticity range due to, for example, a difference in the type or mixing amount of the color material from the reflective display color filter. That is, if the color filter for transmissive display is made thicker than the color filter for reflective display to widen the chromaticity range, the effect of the layer thickness adjusting layer will be impaired. If the chromaticity range of the filter is made wider than that of the reflective display color filter, the effect of the layer thickness adjusting layer is not impaired. vice versa,
Since the thickness of the reflective display color filter can be made larger than that of the transmissive display color filter, the layer thickness balance of the liquid crystal layer between the transmissive display region and the reflective display region can be balanced by the difference in the thickness of the color filters. Can be optimized.

In the present invention, the layer thickness adjusting layer is thicker than the transmissive display color filter formed thin in the transmissive display region and the transmissive display color filter in the reflective display region of the pixel. You may comprise from the formed reflective display color filter. According to this structure, it is not necessary to newly add the layer thickness adjusting layer, so that the number of steps does not increase.

In the present invention, when the color filter is used as the layer thickness adjusting layer, the transmissive display color filter is formed from the first color material layer which is thin and has a wide chromaticity range, and the reflective display color filter is formed. The filter is preferably formed of a second color material layer which is thicker than the first color material layer and has a narrow chromaticity range. In the transflective liquid crystal device, the transmissive display light passes through the color filter only once and is emitted, whereas the reflective display light passes through the color filter twice. If the color filter has a wider chromaticity range than that of the reflective display color filter, an image can be displayed with the same hue in both the transmissive display light and the reflective display light.

In the present invention, the transmissive display color filter is formed of a first color material layer, and the reflective display color filter is formed integrally with the transmissive display color filter. It may be formed from the color material layer and the second color material layer laminated on the upper layer or the lower layer side of the first color material layer.

The liquid crystal device to which the present invention is applied can be used as a display device for electronic devices such as mobile phones and mobile computers.

[0027]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described with reference to the drawings. In each figure used in the following description,
In order to make each layer and each member recognizable in the drawing, the scale is different for each layer and each member.

[Embodiment 1] (Basic Structure of Semi-Transmissive Reflective Liquid Crystal Device) FIG. 1 is a plan view of a semi-transmissive reflective liquid crystal device to which the present invention is applied as viewed from the counter substrate side together with each component FIG. 2 is a sectional view taken along line HH ′ in FIG. 1. FIG. 3 is an equivalent circuit diagram of various elements, wirings, etc. in a plurality of pixels formed in a matrix in the image display area of the transflective liquid crystal device.
In each of the drawings used to describe the present embodiment, the scale of each layer and each member is different in order to make each layer and each member recognizable in the drawing.

1 and 2, the semi-transmissive reflective liquid crystal device 100 of this embodiment has a TFT array substrate 10 (first transparent substrate) and a counter substrate 20 (second transparent substrate) which are bonded together by a sealing material 52. ), A liquid crystal layer 50 as an electro-optical material is held, and a peripheral partition 53 made of a light-shielding material is formed in an area inside the area where the sealing material 52 is formed. A data line driving circuit 101 and a mounting terminal 102 are formed along an edge of the TFT array substrate 10 in a region outside the sealing material 52.
The scanning line driving circuit 104 is provided along two sides adjacent to this one side.
Are formed. On the remaining one side of the TFT array substrate 10, the scanning line driving circuit 1 provided on both sides of the image display area
A plurality of wirings 105 for connecting the terminals 04 are provided, and further, a precharge circuit or a test circuit may be provided under the peripheral partition 53. Further, at least one position of the corner portion of the counter substrate 20 is formed with a vertical conductive material 106 for electrically connecting the TFT array substrate 10 and the counter substrate 20. Further, the data line driving circuit 101, the scanning line driving circuit 104, and the like may overlap with the sealing material 52 or may be formed in the inner region of the sealing material 52.

Instead of forming the data line driving circuit 101 and the scanning line driving circuit 104 on the TFT array substrate 10, for example, a TA on which a driving LSI is mounted is mounted.
A B (tape automated, bonding) substrate may be electrically and mechanically connected to a terminal group formed on the periphery of the TFT array substrate 10 via an anisotropic conductive film. The transflective liquid crystal device 10
0 indicates the type of liquid crystal layer 50 used, that is, TN.
A polarizing film, a retardation film, a polarizing plate, etc. are arranged in a predetermined direction according to an operation mode such as (twisted nematic) mode, STN (super TN) mode, etc., and normally white mode / normally black mode. However, illustration is omitted here. Further, when the transflective liquid crystal device 100 is configured for color display, as described later, the counter substrate 20 has a T
An RGB color filter is formed in a region facing each pixel electrode 9a of the FT array substrate 10 together with its protective film.

In the screen display area of the transflective liquid crystal device 100, as shown in FIG.
Are arranged in a matrix, and each of these pixels 100a has a pixel electrode 9a and a pixel switching TFT for driving the pixel electrode 9a.
30 are formed, and pixel signals S1, S2 ... Sn are formed.
Is electrically connected to the source of the TFT 30. The pixel signals S1, S2 ... Sn to be written to the data line 6a may be line-sequentially supplied in this order, or may be supplied to a plurality of adjacent data lines 6a in groups. Good. Also,
The scanning line 3a is electrically connected to the gate of the TFT 30, and is configured to apply the scanning signals G1, G2 ... Gm to the scanning line 3a in a pulse-sequential order in this order at a predetermined timing. ing. The pixel electrode 9a is the TFT 3
The pixel signal S supplied from the data line 6a is electrically connected to the drain of 0, and the TFT 30, which is a switching element, is turned on for a certain period.
1, S2 ... Sn are written in each pixel at a predetermined timing. In this way, the pixel signals S1, S2, ... Sn of a predetermined level written in the liquid crystal through the pixel electrode 9a.
Are held for a certain period of time with the counter electrode 21 of the counter substrate 20 shown in FIG.

Here, the liquid crystal layer 50 modulates light by changing the orientation or order of the molecular assembly depending on the applied voltage level, and enables gradation display. In the normally white mode, the amount of incident light passing through the portion of the liquid crystal layer 50 decreases depending on the applied voltage, and in the normally black mode, the incident light changes depending on the applied voltage. The amount of light passing through this liquid crystal layer 50 increases. As a result, the light having the contrast according to the pixel signals S1, S2, ... Sn is emitted from the transflective liquid crystal device 100 as a whole.

The pixel signals S1, S2, ...
.. In order to prevent Sn from leaking, the storage capacitor 60 may be added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode. For example, the voltage of the pixel electrode 9a is held by the storage capacitor 60 for a time that is three orders of magnitude longer than the time when the source voltage is applied. As a result, the charge retention characteristic is improved, and the transflective liquid crystal device 100 having a high contrast ratio can be realized. In addition, storage capacity 6
As a method of forming 0, as illustrated in FIG. 3, it is formed between the storage line 60 and the capacitance line 3b, which is a wiring for forming the storage capacitance 60, or between the scan line 3a of the preceding stage. Either case may be used.

(Structure of TFT Array Substrate) FIG. 4 is a plan view of a plurality of pixel groups adjacent to each other on the TFT array substrate used in the transflective liquid crystal device of this embodiment. FIG. 5 is a cross-sectional view when a part of the pixel of the transflective liquid crystal device is cut at a position corresponding to the line CC 'in FIG.

In FIG. 4, a plurality of transparent ITO (Indium Tin Ox) are formed on the TFT array substrate 10.
pixel electrodes 9a (first transparent electrodes) formed of a (ide) film are formed in a matrix, and each of the pixel electrodes 9a is formed.
The pixel switching TFTs 30 are respectively connected to the. Further, the data line 6a, the scanning line 3a, and the capacitance line 3b are formed along the vertical and horizontal boundaries of the pixel electrode 9a, and the TFT 30 includes the data line 6a and the scanning line 3a.
Connected to. That is, the data line 6a is electrically connected to the high-concentration source region 1d of the TFT 30 through the contact hole, and the protruding portion of the scanning line 3a constitutes the gate electrode of the TFT 30. The storage capacitor 60 has a structure in which an extended portion 1f of the semiconductor film 1 for forming the pixel switching TFT 30 is made into a conductive lower electrode, and the lower electrode 41 is overlapped with the capacitive line 3b as an upper electrode. It has become.

As shown in FIG. 5, the cross section of the pixel region thus constructed taken along the line CC 'has a thickness of 30 on the surface of the transparent substrate 10' which is the base of the TFT array substrate 10.
A base protective film 11 made of a silicon oxide film (insulating film) having a thickness of 0 nm to 500 nm is formed, and an island-shaped semiconductor film 1a having a thickness of 30 nm to 100 nm is formed on the surface of the base protective film 11. A gate insulating film 2 made of a silicon oxide film having a thickness of about 50 to 150 nm is formed on the surface of the semiconductor film 1a, and a scanning line 3a having a thickness of 300 nm to 800 nm is formed on the surface of the gate insulating film 2. Has been done. A region of the semiconductor film 1a facing the scanning line 3a via the gate insulating film 2 is a channel region 1a '. The low-concentration source region 1b and the high-concentration source region 1d are provided on one side of the channel region 1a '.
Is formed on the other side, and a drain region including a low-concentration drain region 1c and a high-concentration drain region 1e is formed on the other side.

An interlayer insulating film 4 made of a silicon oxide film having a thickness of 300 nm to 800 nm is formed on the surface side of the pixel switching TFT 30, and the surface of the interlayer insulating film 4 has a thickness of 100 nm to 300 nm. A surface protective film (not shown) made of the silicon nitride film may be formed. The surface of the interlayer insulating film 4 has a thickness of 300 nm to
The data line 6a of 800 nm is formed.
a is electrically connected to the high-concentration source region 1d through a contact hole formed in the interlayer insulating film 4. A drain electrode 6b formed simultaneously with the data line 6a is formed on the surface of the interlayer insulating film 4, and the drain electrode 6b is
It is electrically connected to the high concentration drain region 1e through a contact hole formed in the interlayer insulating film 4.

An unevenness forming layer 13a made of a first photosensitive resin is formed in a predetermined pattern on the upper layer of the interlayer insulating film 4, and a surface of the unevenness forming layer 13a is made of a second photosensitive resin. The upper insulating film 7a is formed. A light reflection film 8a made of an aluminum film or the like is formed on the surface of the upper insulating film 7a. Therefore, the light reflection film 8a
Unevenness of the unevenness forming layer 13a is formed on the surface of the upper layer insulating film 7a.
A concave-convex pattern 8g composed of a concave portion 8c and a convex portion 8b is formed by being reflected through.

Here, a light transmission window 8d is formed in the light reflection layer 8a. Therefore, the light reflection layer 8a constitutes the reflection display region 100b in the pixel region 100a where the pixel electrode 9a and the counter electrode 21 face each other, and at the same time, the light reflection layer 8a.
The transmissive display area 100c is constituted by the remaining area (light transmissive window 8d) in which is not formed.

A pixel electrode 9a made of an ITO film is formed on the light reflection film 8a. The pixel electrode 9a is directly laminated on the surface of the light reflection film 8a, and the pixel electrode 9a and the light reflection film 8a are electrically connected. The pixel electrode 9a is electrically connected to the drain electrode 6b through a contact hole formed in the photosensitive resin layer 7a and the interlayer insulating film 4.

An alignment film 12 made of a polyimide film is formed on the surface side of the pixel electrode 9a. This alignment film 12
Is a film obtained by rubbing a polyimide film.

For the extended portion 1f (lower electrode) extending from the high-concentration drain region 1e, the capacitance line 3b is connected to the upper electrode via an insulating film (dielectric film) formed simultaneously with the gate insulating film 2. The storage capacitors 60 are formed by facing each other.

Further, in the present embodiment, the height of 2 μm, which is made of transparent polyimide resin, is formed on the upper layer side of the capacitance line 3b.
A plurality of columnar protrusions 40 of about 3 μm are formed for each pixel 100, and the columnar protrusions 40 define the distance between the TFT array substrate 10 and the counter substrate 20. Therefore, in the transflective liquid crystal device 100 of this embodiment, TF
No gap material is dispersed between the T array substrate 10 and the counter substrate 20.

The TFT 30 preferably has the LDD structure as described above, but has the offset structure in which the impurity ions are not implanted into the regions corresponding to the low concentration source region 1b and the low concentration drain region 1c. May be. Further, the TFT 30 may be a self-alignment type TFT in which high-concentration source and drain regions are formed in a self-aligned manner by implanting high-concentration impurity ions using the gate electrode (a part of the scanning line 3a) as a mask. .

Further, in the present embodiment, only one gate electrode (scanning line 3a) of the TFT 30 is arranged between the source and drain regions, but two or more gate electrodes are arranged between them. You may. At this time, the same signal is applied to each gate electrode.
By configuring the TFT 30 with a dual gate (double gate) or a triple gate or more in this way, it is possible to prevent a leak current at the junction between the channel and the source-drain region, and reduce the off-time current. If at least one of these gate electrodes has an LDD structure or an offset structure, the off current can be further reduced, and a stable switching element can be obtained.

(Structure of Counter Substrate) In the counter substrate 20, T
A light-shielding film 23 called a black matrix or a black stripe in a region facing the vertical and horizontal boundary regions of the pixel electrode 9a formed on the FT array substrate 10.
Is formed, and the counter electrode 21 (second electrode) made of an ITO film is formed on the upper layer side. Further, on the upper layer side of the counter electrode 21, an alignment film 22 made of a polyimide film is formed.
The alignment film 22 is formed by rubbing the polyimide film.

In addition, the counter electrode 21 on the counter substrate 20.
On the lower layer side, RGB color filters 24 having a thickness of 1 μm to several μm are formed in the reflective display region 100b and the transmissive display region 100c by using a photolithography technique, a flexographic printing method, or an inkjet method. Here, the color filter 24 is used for the reflective display area 10
0b and the transmissive display region 100c are integrally formed, and the film thickness is constant in the reflective display region 100b and the transmissive display region 100c.

Further, in the present embodiment, the layer thickness d of the liquid crystal layer 50 in the reflective display area 100b is set to be the liquid crystal in the transmissive display area 100c between the counter electrode 21 and the color filter 24, that is, on the lower layer side of the counter electrode 21. A layer thickness adjusting layer 25 that is thinner than the layer thickness d of the layer 50 is formed.
In this embodiment, the layer thickness adjusting layer 25 is selectively formed in the reflective display region 100b by using a photolithography technique, a flexographic printing method, or an inkjet method.
It is a transparent layer such as acrylic resin or polyimide resin having a thickness of 2 μm to 3 μm.

(Operation / Effect of this Embodiment) In the liquid crystal device having such a configuration, in the light emitted from the backlight device (not shown) arranged on the back side of the TFT array substrate 10, the transmissive display area is included. The light incident on 100c is indicated by the arrow LB.
As shown in, the liquid crystal layer 50 enters the liquid crystal layer 50 from the TFT array substrate 101 side, is optically modulated by the liquid crystal layer 50, and then is emitted as transmissive display light from the counter substrate 20 side to display an image (transmissive mode). .

Of the external light incident from the counter substrate 20 side, the light incident on the reflective display area 100b is indicated by the arrow L.
As shown by A, it reaches the reflective layer 8a through the liquid crystal layer 50, is reflected by the reflective layer 8a, is again emitted through the liquid crystal layer 50 from the side of the counter substrate 20 as reflective display light to display an image. Yes (reflection mode).

When such a display is performed, the transmitted display light is
While it passes through the liquid crystal layer 50 only once and is emitted,
Although the reflective display light passes through the liquid crystal layer 50 twice, in the present embodiment, the layer thickness adjusting layer 25 formed in the reflective display area 100b allows the layer thickness d of the liquid crystal layer 50 in the reflective display area 100b to be adjusted. Is considerably thinner than the layer thickness d of the liquid crystal layer 50 in the transmissive display region 100c. Therefore, the retardation Δn · d can be optimized for both the transmissive display light and the reflective display light, so that high-quality display can be performed.

Moreover, in this embodiment, the layer thickness adjusting layer 25 is formed on the side of the counter substrate 20, that is, the substrate on which the pixel switching TFT 30 is not formed, and the layer of the liquid crystal layer 50 in the reflective display region 100b is formed. The thickness d is smaller than the layer thickness d of the liquid crystal layer 50 in the transmissive display region 100c. Therefore, even if the layer thickness adjusting layer 25 is provided, the TFT
The exposure accuracy does not decrease in the photolithography process for forming the TFT 30 on the array substrate 10. Therefore, it is possible to provide the transflective liquid crystal device 100 having high reliability and high display quality.

Further, in this embodiment, the TFT array substrate 1
The space between the TFT array substrate 10 and the counter substrate 20 is defined by the columnar protrusions 40 formed at 0, and the gap material is not scattered between the TFT array substrate 10 and the counter substrate 20. Therefore, as in the present embodiment, the counter substrate 20
Even if there is unevenness due to the layer thickness adjusting layer 25, the problem that the gap material accumulates in the recess and does not function does not occur. Therefore, the TFT array substrate 10 and the counter substrate 20
The interval between and is accurately defined, and the retardation Δn
Since d is optimized, high-quality display can be performed.

Further, in this embodiment, since the color filter 24 is formed before the layer thickness adjusting layer 25 is formed, the layer thickness adjusting layer 25 can be formed by using the spin coating method when forming the color filter 24. There is an advantage that the film thickness of the color filter 24 does not vary.

[Second Embodiment] FIG. 6 shows a part of a pixel of a transflective liquid crystal device according to a second embodiment of the present invention, which is indicated by C in FIG.
It is sectional drawing when it cut | disconnects in the position corresponding to a -C 'line. In addition, in the present embodiment and any of the embodiments described below, the basic configuration is the same as that of the first embodiment. Therefore, common portions are given the same reference numerals and their description is omitted, and only the configuration of the counter substrate, which is a feature of each embodiment, will be described.

In the counter substrate 20 shown in FIG. 6, a transparent layer thickness adjusting layer 25 selectively formed in the reflective display area 100b.
Thus, the layer thickness d of the liquid crystal layer 50 in the reflective display area 100b is considerably smaller than the layer thickness d of the liquid crystal layer 50 in the transmissive display area 100c. Therefore, in both the transmitted display light and the reflected display light, the retardation Δn · d
Since it can be optimized, high-quality display can be performed.

Moreover, in the present embodiment, the layer thickness adjusting layer 25 is formed on the side of the counter substrate 20, that is, the substrate on which the pixel switching TFT 30 is not formed, and the layer of the liquid crystal layer 50 in the reflective display region 100b is formed. The thickness d is smaller than the layer thickness d of the liquid crystal layer 50 in the transmissive display region 100c. Therefore, even if the layer thickness adjusting layer 25 is provided, the TFT
The exposure accuracy does not decrease in the photolithography process for forming the TFT 30 on the array substrate 10. Therefore, it is possible to provide the transflective liquid crystal device 100 having high reliability and high display quality.

Further, in the present embodiment, the TFT array substrate 10
The space between the TFT array substrate 10 and the counter substrate 20 is defined by the columnar protrusions 40 formed in the above, and the gap material is not scattered between the TFT array substrate 10 and the counter substrate 20. Therefore, as in the present embodiment, even if the counter substrate 20 has irregularities due to the layer thickness adjusting layer 25, the problem that the gap material remains in the concave portions and does not function does not occur. Therefore, the distance between the TFT array substrate 10 and the counter substrate 20 is accurately defined, and the retardation Δn · d
Is optimized, high-quality display can be performed.

On the lower layer side of the counter electrode 21, RGB color filters are formed in the reflective display area 100b and the transmissive display area 100c. With respect to this color filter, in this embodiment, the transmissive display area 100c is formed. Display color filter 241 and reflective display area 100
Although the film thickness is the same as that of the reflective display color filter 242 formed in b, the transmissive display color filter 241 has a wider chromaticity range than the reflective display color filter 242 because the color materials and the compounding amounts are different.

Therefore, in the transflective liquid crystal device 100, the transmissive display light passes through the color filter only once and is emitted, whereas the reflective display light passes through the color filter twice. However, since the transmissive display color filter 241 has a wider chromaticity range than the reflective display color filter 242, an image can be displayed in the same hue in both the transmissive display light and the reflective display light.

Here, the transmissive display color filter 241 is used.
If the color filter is thicker than the reflective display color filter 242 and the chromaticity range is widened, the effect of the layer thickness adjusting layer 25 is impaired. However, in the present embodiment, the color filter for transmissive display is selected depending on the type or blending amount of the color material. Since the chromaticity range of 241 is wider than that of the reflective display color filter 242, the effect of the layer thickness adjusting layer 25 is not impaired.

On the contrary, as shown in FIG. 7, if the reflective display color filter 242 is made thicker than the transmissive display color filter 241, in addition to the layer thickness adjusting layer 25,
The layer thickness balance of the liquid crystal layer 50 between the transmissive display region 100b and the reflective display region 100c can also be optimized by the difference in the film thickness of the color filters 241 and 242.

[Third Embodiment] FIG. 8 shows a part of a pixel of a transflective liquid crystal device according to a third embodiment of the present invention, which is indicated by C in FIG.
It is sectional drawing when it cut | disconnects in the position corresponding to a -C 'line.

In the first and second embodiments, the layer thickness adjusting layer 25 is formed between the counter electrode 21 and the color filter, but in the present embodiment, it is formed in the transmissive display region 100c as shown in FIG. A transparent layer thickness adjusting layer 25 is selectively formed in the reflective display region 100b on the lower layer side of the transmissive display color filter 241 and the reflective display color filter 242 formed in the reflective display region 100b.

Therefore, the layer thickness d of the liquid crystal layer 50 in the reflective display area 100b is considerably smaller than the layer thickness d of the liquid crystal layer 50 in the transmissive display area 100c. Therefore, the retardation Δn · d can be optimized for both the transmissive display light and the reflective display light, so that high-quality display can be performed. In addition, in the present embodiment, the counter substrate 20 side, that is, the pixel switching TFT 30.
The layer thickness adjusting layer 25 is formed on the substrate on which the liquid crystal layer 50 is not formed, and the layer thickness d of the liquid crystal layer 50 in the reflective display region 100b is set to the layer thickness d of the liquid crystal layer 50 in the transmissive display region 100c.
Since it is thinner than the above, even if the layer thickness adjusting layer 25 is provided,
The exposure accuracy does not decrease in the photolithography process for forming the TFT 30 on the TFT array substrate 10.
Therefore, it is possible to provide the transflective liquid crystal device 100 having high reliability and high display quality.

Also in this embodiment, the transmissive display color filter 241 has a wider chromaticity range than the reflective display color filter 242. Therefore, an image can be displayed with the same hue in both the transmissive display light and the reflective display light.

Further, the columnar protrusions 40 formed on the TFT array substrate 10 define the distance between the TFT array substrate 10 and the counter substrate 20, and the gap material is scattered between the TFT array substrate 10 and the counter substrate 20. Therefore, even if the counter substrate 20 has unevenness due to the layer thickness adjusting layer 25, the problem that the gap material does not function because it is accumulated in the recess does not occur. Therefore, the TFT array substrate 1
Since the interval between 0 and the counter substrate 20 is accurately defined and the retardation Δn · d is optimized, high-quality display can be performed.

In this embodiment, the transmissive display color filter 241 has a wider chromaticity range than the reflective display color filter 242. However, as shown in FIG. 9, the reflective display area 100b and the transmissive display area 100c are provided. Alternatively, the common color filter 24 may be formed.

[Fourth Embodiment] FIG. 10 shows a case where a part of pixels of the transflective liquid crystal device according to the fourth embodiment of the present invention is cut at a position corresponding to the line CC 'in FIG. FIG.

In the first and second embodiments, the layer thickness adjusting layer 25 is formed between the counter electrode 21 and the color filter, and in the third embodiment, the layer thickness adjusting layer 25 is formed below the color filter. However, in the present embodiment, as shown in FIG. 10, a transparent layer thickness adjusting layer 25 is selectively formed in the reflective display area 100b on the upper layer side of the transmissive display color filter 241 formed in the transmissive display area 100c. A reflective display color filter 242 is formed on the upper side of the layer thickness adjusting layer 25.

In the transflective liquid crystal device 100 having the above structure, the liquid crystal layer 50 in the reflective display area 100b is also included.
The layer thickness d of the liquid crystal layer 50 in the transmissive display region 100c is
Is much thinner than the layer thickness d. Therefore, in both the transmitted display light and the reflected display light, the retardation Δn · d
Since it can be optimized, high-quality display can be performed. Moreover, in this embodiment, the side of the counter substrate 20,
That is, the layer thickness adjusting layer 25 is formed on the substrate on which the pixel switching TFT 30 is not formed, and the layer thickness d of the liquid crystal layer 50 in the reflective display region 100b is changed to the layer thickness of the liquid crystal layer 50 in the transmissive display region 100c. Since the thickness is smaller than d, even if the layer thickness adjusting layer 25 is provided, the exposure accuracy does not decrease in the photolithography process for forming the TFT 30 on the TFT array substrate 10. Therefore, it is possible to provide the transflective liquid crystal device 100 having high reliability and high display quality.

Also in this embodiment, the transmissive display color filter 241 has a wider chromaticity range than the reflective display color filter 242. Therefore, an image can be displayed with the same hue in both the transmissive display light and the reflective display light.

Further, the columnar protrusions 40 formed on the TFT array substrate 10 define the distance between the TFT array substrate 10 and the counter substrate 20, and the gap material is scattered between the TFT array substrate 10 and the counter substrate 20. Therefore, even if the counter substrate 20 has unevenness due to the layer thickness adjusting layer 25, the problem that the gap material does not function because it is accumulated in the recess does not occur. Therefore, the TFT array substrate 1
Since the interval between 0 and the counter substrate 20 is accurately defined and the retardation Δn · d is optimized, high-quality display can be performed.

In this embodiment, the transmissive display color filter 241 has a wider chromaticity range than the reflective display color filter 242. However, as shown in FIG. 11, in the transmissive display area 100c and the reflective display area 100b. On the other hand, the color filters 241 and 242 having the same film thickness and chromaticity range may be formed.

[Fifth Embodiment] FIG. 12 shows a case where a part of pixels of the transflective liquid crystal device according to the fifth embodiment of the present invention is cut at a position corresponding to the line CC 'in FIG. FIG.

In the above-described first, second, third, and fourth embodiments, the layer thickness adjusting layer 25 is selectively formed in the reflective display area 100b. However, as shown in FIG. 12, for example, as shown in FIG. A transparent layer that is thin at 100c and thick at the reflective display region 100b may be formed as the layer thickness adjusting layer 25. The layer thickness adjusting layer 25 having such a structure is formed by a photolithography technique,
It can be formed by a flexographic printing method, a method of forming a transparent layer twice by an inkjet method, or a half-exposure photolithography technique.

[Sixth Embodiment] FIG. 13 shows a case where a part of the pixel of the transflective liquid crystal device of the sixth embodiment of the present invention is cut at a position corresponding to the line CC 'in FIG. FIG.

In the first to fifth embodiments, the layer thickness adjusting layer 25 made of a transparent layer is added to the lower layer side of the counter electrode 21, but as in the sixth and seventh embodiments described below,
The color filter itself may be used as the layer thickness adjusting layer.

As shown in FIG. 13, in the transflective liquid crystal device 100 of this embodiment, a transmissive display is performed on the lower layer side of the counter electrode 21 by using a photolithography technique, a flexographic printing method, or an inkjet method. Area 100c
A thin transmissive display color filter 241 is formed on the thin film, and a thick reflective display color filter 2 is formed in the reflective display region 100b.
42 is formed.

Therefore, the layer thickness d of the liquid crystal layer 50 in the reflective display area 100b is considerably smaller than the layer thickness d of the liquid crystal layer 50 in the transmissive display area 100c. Therefore, the retardation Δn · d can be optimized for both the transmissive display light and the reflective display light, so that high-quality display can be performed. In addition, in the present embodiment, the counter substrate 20 side, that is, the pixel switching TFT 30.
The layer thickness adjusting layer 25 is formed on the substrate on which the liquid crystal layer 50 is not formed, and the layer thickness d of the liquid crystal layer 50 in the reflective display region 100b is set to the layer thickness d of the liquid crystal layer 50 in the transmissive display region 100c.
Since it is thinner than the above, even if the layer thickness adjusting layer 25 is provided,
The exposure accuracy does not decrease in the photolithography process for forming the TFT 30 on the TFT array substrate 10.
Therefore, it is possible to provide the transflective liquid crystal device 100 having high reliability and high display quality.

Also in this embodiment, the transmissive display color filter 241 has a wider chromaticity range than the reflective display color filter 242 depending on the type and mixing amount of the color material. Therefore, an image can be displayed with the same hue in both the transmissive display light and the reflective display light.

Further, also in this embodiment, the TFT array substrate 1
The columnar protrusions 40 formed in 0 define the distance between the TFT array substrate 10 and the counter substrate 20, and no gap material is distributed between the TFT array substrate 10 and the counter substrate 20, so that the counter substrate 20 is Even if there are irregularities due to the layer thickness adjusting layer 25, the problem that the gap material is accumulated in the concave portions and does not function does not occur. Therefore, TFT
Since the interval between the array substrate 10 and the counter substrate 20 is accurately defined and the retardation Δn · d is optimized, high-quality display can be performed.

In this embodiment, the transmissive display color filter 241 has a wider chromaticity range than the reflective display color filter 242. However, as shown in FIG. 14, the transmissive display area 100c and the reflective display area 100b are provided. On the other hand, the color filter 24 having the same coloring material but different film thickness
1, 242 may be formed respectively.

Further, as shown in FIG. 15, a color filter 241 (first color material layer) having the same chromaticity range and film thickness as the transmissive display region 100c with respect to the reflective display region 100b.
And a color filter 242 (second color material layer) made of another color material may be laminated to have a difference in film thickness.

[Seventh Embodiment] FIG. 16 shows a case where a part of the pixels of the transflective liquid crystal device of the seventh embodiment of the present invention is cut at a position corresponding to the line CC 'in FIG. FIG.

In the first to sixth embodiments, the layer thickness adjusting layer 25 is added to the side of the counter substrate 20, but as shown in FIG. 16, the reflective display region 10 of the TFT array substrate 10 is shown.
0b, the layer thickness adjusting layer 15 made of a photosensitive resin is selectively formed using a photolithography technique, a flexographic printing method, or an inkjet method, so that the retardation in both the transmitted display light and the reflected display light is increased. The foundation Δn · d may be optimized.

In the example shown in FIG. 16, the unevenness forming layer 1
Although the layer thickness adjusting layer 15 is formed on the lower layer side of the pixel electrode 3a, the layer thickness adjusting layer 15 may be formed on any layer on the lower layer side of the pixel electrode 9a.
May be formed. Further, if the interlayer adjustment layer 15 is formed on the lower layer side of the light reflection film 8a, the layer thickness adjustment layer 15 need not be limited to the transparent film.

[Embodiment 8] FIG. 17 shows a part of a pixel of the transflective liquid crystal device according to Embodiment 8 of the present invention when cut at a position corresponding to the line CC 'in FIG. FIG.

In the first to seventh embodiments, the layer thickness adjusting layers 15 and 2 are used.
By adding 5, the retardation Δn · d is optimized for both the transmitted display light and the reflected display light. For example, as shown in FIG.
By removing the upper insulating film 7a in the 0 transmissive display region 100c, the total thickness of the film formed on the lower layer side of the pixel electrode 9a is increased in the reflective display region 100b, and the transmissive display region 10 is increased.
The thickness may be reduced to 0c to adjust the layer thickness d of the liquid crystal layer 50.

[Other Embodiments] In the above embodiment, the TFT is used as an active element for pixel switching.
The example using the
(Metal Insulator Metal) elements such as thin film diode elements (TFD element / ThinFi)
The same applies when an lm Diode element) is used.

[Application of transflective liquid crystal device to electronic equipment] The transflective liquid crystal device 100 configured as described above.
Can be used as a display portion of various electronic devices, and an example thereof will be described with reference to FIGS. 18, 19, and 20.

FIG. 18 is a block diagram showing a circuit configuration of an electronic device using the transflective liquid crystal device according to the present invention as a display device.

In FIG. 18, the electronic equipment has a display information output source 70, a display information processing circuit 71, a power supply circuit 72, a timing generator 73, and a liquid crystal device 74. The liquid crystal device 74 also includes a liquid crystal display panel 75 and a drive circuit 76. As the liquid crystal device 74, the transflective liquid crystal device 100 described above can be used.

The display information output source 70 is a ROM (Read
Only Memory), RAM (Random)
A memory such as an Access Memory), a storage unit such as various disks, a tuning circuit that tunes and outputs a digital image signal, and the like, and a display such as an image signal of a predetermined format based on various clock signals generated by the timing generator 73. Information is supplied to the display information processing circuit 71.

The display information processing circuit 71 includes various well-known circuits such as a serial-parallel conversion circuit, an amplification / inversion circuit, a rotation circuit, a gamma correction circuit, a clamp circuit, etc., and executes processing of input display information. , And supplies the image signal to the drive circuit 76 together with the clock signal CLK. The power supply circuit 72 supplies a predetermined voltage to each component.

FIG. 19 shows a mobile personal computer which is an embodiment of an electronic apparatus according to the present invention. The personal computer 80 shown here has a main body 82 having a keyboard 81, and a liquid crystal display unit 83. The liquid crystal display unit 83 includes the transflective liquid crystal device 100 described above.

FIG. 20 shows a mobile phone which is another embodiment of the electronic apparatus according to the present invention. The mobile phone 90 shown here has a plurality of operation buttons 91 and a display unit including the above-described transflective liquid crystal device 100.

[0098]

As described above, in the present invention,
The transmitted display light passes through the liquid crystal layer only once and is emitted, whereas the reflected display light passes through the liquid crystal layer twice, but the layer thickness of the liquid crystal layer in the reflective display region is It is considerably thinner than the liquid crystal layer in the transmissive display region. Therefore, the retardation can be optimized for both the transmissive display light and the reflective display light, so that high-quality display can be performed.

[Brief description of drawings]

FIG. 1 is a plan view of a transflective liquid crystal device to which the present invention is applied, as viewed from a counter substrate side.

FIG. 2 is a sectional view taken along the line HH ′ of FIG.

FIG. 3 is an equivalent circuit diagram of elements and the like formed in a plurality of pixels in a matrix in a transflective liquid crystal device.

FIG. 4 is a plan view showing a configuration of each pixel of the TFT array substrate of the transflective liquid crystal device according to the present invention.

FIG. 5 is a cross-sectional view of the transflective liquid crystal device according to the first embodiment of the present invention taken at a position corresponding to line CC ′ in FIG. 4.

6 is a cross-sectional view of the semi-transmissive reflective liquid crystal device according to Embodiment 2 of the present invention, taken at a position corresponding to the line CC 'in FIG.

7 is a cross-sectional view of a semi-transmissive reflective liquid crystal device according to a modification of the second embodiment of the present invention, taken at a position corresponding to line CC ′ in FIG.

FIG. 8 is a cross-sectional view of the transflective liquid crystal device according to the third embodiment of the present invention taken at a position corresponding to line CC ′ in FIG. 4.

FIG. 9 is a cross-sectional view of a transflective liquid crystal device according to a modification of the third embodiment of the present invention, taken at a position corresponding to line CC ′ in FIG. 4.

FIG. 10 is a cross-sectional view of the transflective liquid crystal device according to the fourth embodiment of the present invention taken at a position corresponding to the line CC ′ in FIG. 4.

FIG. 11 is a cross-sectional view of the transflective liquid crystal device according to a modification of the fourth embodiment of the present invention, taken at a position corresponding to line CC ′ in FIG. 4.

FIG. 12 is a cross-sectional view of the transflective liquid crystal device according to the fifth embodiment of the present invention taken at a position corresponding to the line CC ′ in FIG. 4.

FIG. 13 is a cross-sectional view of the transflective liquid crystal device according to the sixth embodiment of the present invention, taken at a position corresponding to the line CC ′ in FIG. 4.

FIG. 14 is a cross-sectional view of a semi-transmissive reflective liquid crystal device according to a modification of the sixth embodiment of the present invention, taken at a position corresponding to the line CC ′ in FIG. 4.

FIG. 15 is a cross-sectional view of a transflective liquid crystal device according to another modification of the sixth embodiment of the present invention, taken at a position corresponding to the line CC ′ in FIG. 4.

16 is a cross-sectional view of the transflective liquid crystal device according to Embodiment 7 of the present invention, taken at a position corresponding to the line CC ′ in FIG. 4.

FIG. 17 is a cross-sectional view of the transflective liquid crystal device according to the eighth embodiment of the present invention taken at a position corresponding to the line CC ′ in FIG. 4.

FIG. 18 is a block diagram showing a circuit configuration of an electronic device using the transflective liquid crystal device according to the present invention as a display device.

FIG. 19 is an explanatory diagram showing a mobile personal computer using the transflective liquid crystal device according to the present invention.

FIG. 20 is an explanatory diagram of a mobile phone using the transflective liquid crystal device according to the present invention.

FIG. 21 is a cross-sectional view of a conventional transflective liquid crystal device.

[Explanation of symbols]

1a Semiconductor film 2 Gate insulating film 3a scanning line 3b Capacitance line 4 Interlayer insulation film 6a data line 6b drain electrode 7a Upper insulating film 8a Light reflection film 8d light transmission window 8g Light reflection film surface uneven pattern 9a Pixel electrode 10 TFT array substrate 11 Base protection film 13a Concavo-convex forming layer 15, 25 layer thickness adjustment layer 20 Counter substrate 21 Counter electrode 23 Light-shielding film 24 color filters 30 pixel switching TFT 40 columnar protrusion 70 LCD 60 storage capacity 100 transflective liquid crystal device 100a pixel 100b reflective display area 100c transparent display area

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 2H089 HA07 TA02 TA05 TA09 TA12                       TA17                 2H090 HA04 HA08 HB08X HD06                       LA01 LA15 LA20                 2H091 FA15Y FD04 FD06 FD23                       FD24 GA02 GA13 GA16 LA13                       LA16                 2H092 GA13 GA23 PA08 PA12

Claims (18)

[Claims] 1. A first transparent substrate on which a first transparent electrode and pixel switching elements are formed in a matrix on a surface, and a second transparent electrode on a surface side facing the first transparent electrode. A second transparent substrate, and a liquid crystal layer held between the first transparent substrate and the second transparent substrate, and the first transparent substrate is provided with the first transparent substrate on the side of the first transparent substrate. In a semi-transmissive reflective liquid crystal device in which a reflective display region is formed in a pixel in which the transparent electrode and the second transparent electrode face each other, and a light reflective layer having the remaining region of the pixel as a transmissive display region is formed, The first transparent substrate and the second transparent substrate are formed such that the layer thickness of the liquid crystal layer in the reflective display region is smaller than the layer thickness of the liquid crystal layer in the transmissive display region. Characteristic transflective liquid crystal device. 2. The liquid crystal layer-side surface of the second transparent substrate according to claim 1, wherein the total thickness of a film formed below the second electrode is smaller than that of the transmissive display area. A transflective liquid crystal device characterized by being thick in the area. 3. The liquid crystal layer side surface of the first transparent substrate according to claim 1, wherein the total thickness of a film formed below the first electrode is smaller than that of the transmissive display area. A transflective liquid crystal device characterized by being thick in the area. 4. The layer thickness of the liquid crystal layer in the reflective display region according to claim 1, wherein a surface of one of the first transparent substrate and the second transparent substrate on the liquid crystal layer side has a layer thickness of the liquid crystal layer. A semi-transmissive reflective liquid crystal device, wherein a layer thickness adjusting layer is formed to reduce the thickness of the liquid crystal layer in the transmissive display region. 5. The layer thickness adjusting layer according to claim 4,
A transflective liquid crystal device formed on the second transparent substrate. 6. The layer thickness adjusting layer according to claim 5,
A transflective liquid crystal device comprising a transparent layer selectively formed in the reflective display area. 7. The layer thickness adjusting layer according to claim 5,
A semi-transmissive reflective liquid crystal device, characterized in that it is a transparent layer formed thick in the reflective display area and thinner in the transmissive display area than in the reflective display area. 8. The transflective liquid crystal device according to claim 6, wherein a color filter is formed in the pixel on the surface of the second transparent substrate on the liquid crystal layer side. 9. The liquid crystal layer-side surface of the second transparent substrate according to claim 6, wherein the transparent display region of the pixel has one of upper and lower layers than the transparent layer. A color filter for transmissive display is formed on one side,
A semi-transmissive reflective liquid crystal device, wherein a reflective display color filter is formed in the reflective display area on the same side of the transparent layer as the transmissive display color filter. 10. The second device according to claim 6,
On the liquid crystal layer side surface of the substrate, a transmissive display color filter is formed on one of the upper layer side and the lower layer side of the transparent layer in the transmissive display area of the pixel, and in the reflective display area. Is a transflective liquid crystal device, wherein a color filter for reflective display is formed on a side of the transparent layer opposite to the color filter for transmissive display. 11. The transflective liquid crystal device according to claim 9, wherein the color filter for transmissive display has a wider chromaticity range than the color filter for reflective display. 12. The semi-transmissive reflective type color filter according to claim 11, wherein the transmissive display color filter has a wide chromaticity range due to a difference in a kind or a blending amount of a color material from the reflective display color filter. Liquid crystal device. 13. The transflective liquid crystal device according to claim 9, wherein the transmissive display color filter and the second color filter have the same film thickness. 14. The transflective liquid crystal device according to claim 9, wherein the reflective display color filter is thicker than the transmissive display color filter. 15. The layer thickness adjusting layer according to claim 5, wherein, in the pixel, the transmissive display color filter thinly formed in the transmissive display region and the transmissive display color filter in the reflective display region. A transflective liquid crystal device comprising a reflective display color filter formed thick. 16. The color filter for transmissive display according to claim 15, wherein the color filter for transmissive display is formed of a first color material layer that is thin and has a wide chromaticity range, and the color filter for reflective display is the first color material layer. A transflective liquid crystal device, which is formed from a second color material layer which is thicker and has a narrower chromaticity range. 17. The color filter for transmissive display according to claim 15, wherein the color filter for transmissive display is formed of a first color material layer, and the color filter for reflective display is integrally formed with the color filter for transmissive display. And a second color material layer laminated on the upper side or the lower layer side of the first color material layer. 18. An electronic device comprising a transflective liquid crystal device according to claim 1 in a display section.