JP2003292583A - Epoxy resin molding material and electronic part device - Google Patents
Epoxy resin molding material and electronic part deviceInfo
- Publication number
- JP2003292583A JP2003292583A JP2002097748A JP2002097748A JP2003292583A JP 2003292583 A JP2003292583 A JP 2003292583A JP 2002097748 A JP2002097748 A JP 2002097748A JP 2002097748 A JP2002097748 A JP 2002097748A JP 2003292583 A JP2003292583 A JP 2003292583A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- molding material
- integer
- general formula
- resin molding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 195
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 191
- 239000012778 molding material Substances 0.000 title claims abstract description 71
- 239000005011 phenolic resin Substances 0.000 claims abstract description 50
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 45
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 40
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 30
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000011256 inorganic filler Substances 0.000 claims abstract description 12
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims description 35
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 claims description 25
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 24
- 125000004432 carbon atom Chemical group C* 0.000 claims description 18
- 229920001568 phenolic resin Polymers 0.000 claims description 14
- 239000004305 biphenyl Substances 0.000 claims description 12
- 235000010290 biphenyl Nutrition 0.000 claims description 12
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 12
- 229910052717 sulfur Inorganic materials 0.000 claims description 12
- 125000004434 sulfur atom Chemical group 0.000 claims description 12
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 11
- 150000001721 carbon Chemical class 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 150000002430 hydrocarbons Chemical group 0.000 claims description 4
- -1 Glycidyl ester Chemical class 0.000 description 29
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 24
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 22
- 229920003986 novolac Polymers 0.000 description 21
- 238000000034 method Methods 0.000 description 16
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 15
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 14
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 13
- 239000004593 Epoxy Substances 0.000 description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 12
- 238000000465 moulding Methods 0.000 description 12
- XYFCBTPGUUZFHI-UHFFFAOYSA-N phosphine group Chemical group P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 12
- 238000012937 correction Methods 0.000 description 11
- 239000000047 product Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 10
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 10
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 10
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 9
- 229930185605 Bisphenol Natural products 0.000 description 8
- 238000013329 compounding Methods 0.000 description 8
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 8
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 8
- 150000002989 phenols Chemical class 0.000 description 8
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 239000003063 flame retardant Substances 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 125000003710 aryl alkyl group Chemical group 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000005350 fused silica glass Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 238000004898 kneading Methods 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- FRASJONUBLZVQX-UHFFFAOYSA-N 1,4-naphthoquinone Chemical compound C1=CC=C2C(=O)C=CC(=O)C2=C1 FRASJONUBLZVQX-UHFFFAOYSA-N 0.000 description 4
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 4
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 4
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 4
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- NBBJYMSMWIIQGU-UHFFFAOYSA-N Propionic aldehyde Chemical compound CCC=O NBBJYMSMWIIQGU-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 4
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 4
- 238000009833 condensation Methods 0.000 description 4
- 239000007822 coupling agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- SMQUZDBALVYZAC-UHFFFAOYSA-N salicylaldehyde Chemical compound OC1=CC=CC=C1C=O SMQUZDBALVYZAC-UHFFFAOYSA-N 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910052845 zircon Inorganic materials 0.000 description 4
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 4
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- UMHKOAYRTRADAT-UHFFFAOYSA-N [hydroxy(octoxy)phosphoryl] octyl hydrogen phosphate Chemical compound CCCCCCCCOP(O)(=O)OP(O)(=O)OCCCCCCCC UMHKOAYRTRADAT-UHFFFAOYSA-N 0.000 description 3
- 239000002318 adhesion promoter Substances 0.000 description 3
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 3
- 150000001450 anions Chemical class 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 238000000748 compression moulding Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 3
- 239000000347 magnesium hydroxide Substances 0.000 description 3
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 3
- 229910000000 metal hydroxide Inorganic materials 0.000 description 3
- 150000004692 metal hydroxides Chemical class 0.000 description 3
- 150000004780 naphthols Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 229920000098 polyolefin Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 3
- WXAZIUYTQHYBFW-UHFFFAOYSA-N tris(4-methylphenyl)phosphane Chemical compound C1=CC(C)=CC=C1P(C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 WXAZIUYTQHYBFW-UHFFFAOYSA-N 0.000 description 3
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 3
- XAEWLETZEZXLHR-UHFFFAOYSA-N zinc;dioxido(dioxo)molybdenum Chemical compound [Zn+2].[O-][Mo]([O-])(=O)=O XAEWLETZEZXLHR-UHFFFAOYSA-N 0.000 description 3
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 2
- NADHCXOXVRHBHC-UHFFFAOYSA-N 2,3-dimethoxycyclohexa-2,5-diene-1,4-dione Chemical compound COC1=C(OC)C(=O)C=CC1=O NADHCXOXVRHBHC-UHFFFAOYSA-N 0.000 description 2
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- URDOJQUSEUXVRP-UHFFFAOYSA-N 3-triethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCOC(=O)C(C)=C URDOJQUSEUXVRP-UHFFFAOYSA-N 0.000 description 2
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 2
- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 description 2
- XLSZMDLNRCVEIJ-UHFFFAOYSA-N 4-methylimidazole Chemical compound CC1=CNC=N1 XLSZMDLNRCVEIJ-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- IKHGUXGNUITLKF-XPULMUKRSA-N acetaldehyde Chemical compound [14CH]([14CH3])=O IKHGUXGNUITLKF-XPULMUKRSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- RWZYAGGXGHYGMB-UHFFFAOYSA-N anthranilic acid Chemical compound NC1=CC=CC=C1C(O)=O RWZYAGGXGHYGMB-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 125000006267 biphenyl group Chemical group 0.000 description 2
- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N butyric aldehyde Natural products CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- 239000000378 calcium silicate Substances 0.000 description 2
- 229910052918 calcium silicate Inorganic materials 0.000 description 2
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 235000013869 carnauba wax Nutrition 0.000 description 2
- 239000004203 carnauba wax Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 229910002026 crystalline silica Inorganic materials 0.000 description 2
- 150000007973 cyanuric acids Chemical class 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- CRGRWBQSZSQVIE-UHFFFAOYSA-N diazomethylbenzene Chemical compound [N-]=[N+]=CC1=CC=CC=C1 CRGRWBQSZSQVIE-UHFFFAOYSA-N 0.000 description 2
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 2
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- 238000007429 general method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 2
- 229910052863 mullite Inorganic materials 0.000 description 2
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 2
- UTOPWMOLSKOLTQ-UHFFFAOYSA-N octacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O UTOPWMOLSKOLTQ-UHFFFAOYSA-N 0.000 description 2
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 2
- 150000003003 phosphines Chemical class 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000011417 postcuring Methods 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 229960001755 resorcinol Drugs 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
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- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- IYMSIPPWHNIMGE-UHFFFAOYSA-N silylurea Chemical compound NC(=O)N[SiH3] IYMSIPPWHNIMGE-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- BJQWBACJIAKDTJ-UHFFFAOYSA-N tetrabutylphosphanium Chemical compound CCCC[P+](CCCC)(CCCC)CCCC BJQWBACJIAKDTJ-UHFFFAOYSA-N 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- 150000004867 thiadiazoles Chemical class 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- WLPUWLXVBWGYMZ-UHFFFAOYSA-N tricyclohexylphosphine Chemical compound C1CCCCC1P(C1CCCCC1)C1CCCCC1 WLPUWLXVBWGYMZ-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- MDCWDBMBZLORER-UHFFFAOYSA-N triphenyl borate Chemical compound C=1C=CC=CC=1OB(OC=1C=CC=CC=1)OC1=CC=CC=C1 MDCWDBMBZLORER-UHFFFAOYSA-N 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical group C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- XDHRVAHAGMMFMC-UHFFFAOYSA-N tris(2,4-dimethylphenyl)phosphane Chemical compound CC1=CC(C)=CC=C1P(C=1C(=CC(C)=CC=1)C)C1=CC=C(C)C=C1C XDHRVAHAGMMFMC-UHFFFAOYSA-N 0.000 description 1
- RERMPCBBVZEPBS-UHFFFAOYSA-N tris(2,6-dimethylphenyl)phosphane Chemical compound CC1=CC=CC(C)=C1P(C=1C(=CC=CC=1C)C)C1=C(C)C=CC=C1C RERMPCBBVZEPBS-UHFFFAOYSA-N 0.000 description 1
- CKKFLUXMIUUGAW-UHFFFAOYSA-N tris(2-propan-2-ylphenyl)phosphane Chemical compound CC(C)C1=CC=CC=C1P(C=1C(=CC=CC=1)C(C)C)C1=CC=CC=C1C(C)C CKKFLUXMIUUGAW-UHFFFAOYSA-N 0.000 description 1
- GDKAFTKCUOBEDW-UHFFFAOYSA-N tris(2-tert-butylphenyl)phosphane Chemical compound CC(C)(C)C1=CC=CC=C1P(C=1C(=CC=CC=1)C(C)(C)C)C1=CC=CC=C1C(C)(C)C GDKAFTKCUOBEDW-UHFFFAOYSA-N 0.000 description 1
- RYXYUARTMQUYKV-UHFFFAOYSA-N tris(4-butylphenyl)phosphane Chemical compound C1=CC(CCCC)=CC=C1P(C=1C=CC(CCCC)=CC=1)C1=CC=C(CCCC)C=C1 RYXYUARTMQUYKV-UHFFFAOYSA-N 0.000 description 1
- SPNVODOGUAUMCA-UHFFFAOYSA-N tris(4-ethoxy-2,6-dimethylphenyl)phosphane Chemical compound CC1=CC(OCC)=CC(C)=C1P(C=1C(=CC(OCC)=CC=1C)C)C1=C(C)C=C(OCC)C=C1C SPNVODOGUAUMCA-UHFFFAOYSA-N 0.000 description 1
- LQEKTSMTEYLBLJ-UHFFFAOYSA-N tris(4-ethoxyphenyl)phosphane Chemical compound C1=CC(OCC)=CC=C1P(C=1C=CC(OCC)=CC=1)C1=CC=C(OCC)C=C1 LQEKTSMTEYLBLJ-UHFFFAOYSA-N 0.000 description 1
- PCCAGZSOGFNURV-UHFFFAOYSA-N tris(4-ethylphenyl)phosphane Chemical compound C1=CC(CC)=CC=C1P(C=1C=CC(CC)=CC=1)C1=CC=C(CC)C=C1 PCCAGZSOGFNURV-UHFFFAOYSA-N 0.000 description 1
- UYUUAUOYLFIRJG-UHFFFAOYSA-N tris(4-methoxyphenyl)phosphane Chemical compound C1=CC(OC)=CC=C1P(C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 UYUUAUOYLFIRJG-UHFFFAOYSA-N 0.000 description 1
- JTOQWGJGVSYTTN-UHFFFAOYSA-N tris(4-propylphenyl)phosphane Chemical compound C1=CC(CCC)=CC=C1P(C=1C=CC(CCC)=CC=1)C1=CC=C(CCC)C=C1 JTOQWGJGVSYTTN-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 125000002256 xylenyl group Chemical class C1(C(C=CC=C1)C)(C)* 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 150000003755 zirconium compounds Chemical class 0.000 description 1
Landscapes
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、流動性に優れ、薄
型の表面実装型パッケージにおけるチップシフトの発生
やワイヤースウィープ量が少なく、耐リフロー性に優れ
たエポキシ樹脂成形材料、及びこのエポキシ樹脂成形材
料で封止した素子を備えた電子部品装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin molding material which is excellent in fluidity and has a small amount of wire shift in the occurrence of chip shift in a thin surface mounting type package, and an excellent reflow resistance, and the epoxy resin molding material. The present invention relates to an electronic component device including an element sealed with a material.
【0002】[0002]
【従来の技術】従来から、トランジスタ、IC等の電子
部品封止の分野ではエポキシ樹脂成形材料が広く用いら
れている。この理由としては、エポキシ樹脂が電気特
性、耐湿性、耐熱性、機械特性、インサート品との接着
性などの諸特性にバランスがとれているためである。特
に、オルソクレゾールノボラック型エポキシ樹脂とフェ
ノールノボラック硬化剤の組み合わせはこれらのバラン
スに優れており、封止用成形材料のベース樹脂の主流に
なっている。近年では、電子部品のプリント配線板への
高密度実装化に伴い、電子部品装置は従来のピン挿入型
から、表面実装型のパッケージが主流になってきてい
る。表面実装型のIC、LSI等は、実装密度を高くし
て実装高さを低くするために、薄型、小型のパッケージ
になっており、素子のパッケージに対する占有体積が大
きくなり、パッケージの肉厚は非常に薄くなってきた。
特にTSOP(Thin Small Outline Package)、TQF
P(Thin Quad Flat Package)等の肉厚が非常に薄いパ
ッケージでは、封止用のエポキシ樹脂成形材料の流動性
が低い場合、成形時にチップシフトが発生し、これらの
シフトによりボイドが発生したり、上下のエポキシ樹脂
成形材料の肉厚のバランスが崩れ、耐リフロー性を低下
させる要因となってしまう。また、実装密度の増大にと
もなってパッケージ当たりのピン数が増加するため、パ
ッケージ内部で素子とリードの接続に使用される金線も
長く、それらのピッチも狭くなってきた。そのためエポ
キシ成形材料の流動性が低い場合、金線の変形(ワイヤ
ースウィープ)を引き起こし、金線同士の接触や断線等
による動作不良の要因となってしまう。そこで、エポキ
シ樹脂成形材料の流動性を向上させる検討が行われてい
るが十分な解決には至っていない。2. Description of the Related Art Conventionally, epoxy resin molding materials have been widely used in the field of encapsulating electronic parts such as transistors and ICs. The reason for this is that the epoxy resin is well balanced in various characteristics such as electric characteristics, moisture resistance, heat resistance, mechanical characteristics, and adhesiveness with insert products. In particular, the combination of the ortho-cresol novolac type epoxy resin and the phenol novolac curing agent has an excellent balance of these, and has become the mainstream of the base resin of the molding material for sealing. In recent years, along with high-density mounting of electronic components on a printed wiring board, surface mount type packages have become the mainstream of electronic component devices, instead of the conventional pin insertion type. Surface mount type ICs, LSIs, etc. are thin and small packages in order to increase the mounting density and lower the mounting height, and the volume occupied by the element with respect to the package is large, and the thickness of the package is It has become very thin.
Especially TSOP (Thin Small Outline Package), TQF
In a package such as P (Thin Quad Flat Package) with a very thin wall, if the epoxy resin molding material for encapsulation has low fluidity, chip shift occurs during molding, and voids may occur due to these shifts. However, the balance of the thicknesses of the upper and lower epoxy resin molding materials is lost, which causes a reduction in reflow resistance. Further, as the mounting density increases, the number of pins per package increases, so that the gold wire used for connecting the element and the lead inside the package is long and the pitch thereof is narrowing. Therefore, when the fluidity of the epoxy molding material is low, deformation of the gold wire (wire sweep) is caused, which causes a malfunction due to contact between the gold wires and disconnection. Therefore, studies have been made to improve the fluidity of the epoxy resin molding material, but the solution has not been sufficiently solved.
【0003】[0003]
【発明が解決しようとする課題】本発明はかかる状況に
鑑みなされたもので、流動性に優れ、薄型の表面実装型
パッケージにおけるチップシフト、ボイド、ワイヤース
ウィープの発生が少なく、耐リフロー性に優れたエポキ
シ樹脂成形材料、及びこのエポキシ樹脂成形材料で封止
した素子を備えた電子部品装置を提供しようとするもの
である。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances and has excellent fluidity, less chip shift, voids and wire sweeps in a thin surface mount type package, and excellent reflow resistance. Another object of the present invention is to provide an epoxy resin molding material and an electronic component device including an element sealed with the epoxy resin molding material.
【0004】[0004]
【課題を解決するための手段】本発明者らは、上記の課
題を解決するために鋭意検討を重ねた結果、特定構造の
硬化剤を配合したエポキシ樹脂成形材料により上記の目
的を達成しうることを見いだし、本発明を完成するに至
った。Means for Solving the Problems As a result of intensive studies to solve the above problems, the inventors of the present invention can achieve the above object with an epoxy resin molding material containing a curing agent having a specific structure. As a result, they have completed the present invention.
【0005】すなわち、本発明は、(1) (A)エポ
キシ樹脂、(B)硬化剤、(C)硬化促進剤、及び
(D)無機充填剤を必須成分とし、(B)硬化剤が、下
記一般式(I)で示されてn=1以上の成分量が11重
量%以下のフェノール樹脂を含有し、かつ、1分子内に
フェノール性水酸基を平均で3個以上含有する多官能フ
ェノール樹脂の含有量が(B)硬化剤全量中に10重量
%未満であるエポキシ樹脂成形材料に関する。That is, the present invention comprises (1) (A) epoxy resin, (B) curing agent, (C) curing accelerator, and (D) inorganic filler as essential components, and (B) curing agent A polyfunctional phenolic resin represented by the following general formula (I), which contains a phenolic resin in which the component amount of n = 1 or more is 11% by weight or less and which contains an average of 3 or more phenolic hydroxyl groups in one molecule. Of (B) is less than 10% by weight based on the total amount of the curing agent.
【化6】
ただし、一般式(I)で、Rは水素原子、置換又は非置
換の炭素数1〜6のアルキル基を示し、mは0又は1〜
2の整数、nは0又は1〜10の整数を示す。[Chemical 6] However, in the general formula (I), R represents a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, and m is 0 or 1
The integer of 2 and n show 0 or the integer of 1-10.
【0006】(2) 上記(1)記載のエポキシ樹脂成
形材料において、(B)硬化剤が下記一般式(II)で示
されるジシクロペンタジエン型フェノール樹脂を含有す
るのが好ましい。(2) In the epoxy resin molding material described in (1) above, it is preferable that the curing agent (B) contains a dicyclopentadiene type phenol resin represented by the following general formula (II).
【化7】
ただし、一般式(II)で、R1及びR2は水素原子及び炭
素数1〜6のアルキル基からそれぞれ独立して選ばれ、
m個全てが同一でも異なっていてもよい。mは0又は1
〜6の整数を示し、nは0又は1〜10の整数を示す。[Chemical 7] However, in the general formula (II), R 1 and R 2 are independently selected from a hydrogen atom and an alkyl group having 1 to 6 carbon atoms,
All m may be the same or different. m is 0 or 1
Shows the integer of -6, n shows the integer of 0 or 1-10.
【0007】(3) 上記(2)記載のエポキシ樹脂成
形材料において、一般式(II)で示されるジシクロペン
タジエン型フェノール樹脂のnの平均値が0以上0.5
未満であるのが好ましい。(3) In the epoxy resin molding material described in (2), the average value of n of the dicyclopentadiene type phenol resin represented by the general formula (II) is 0 or more and 0.5 or more.
It is preferably less than.
【0008】(4) 上記(1)〜(3)のいずれか記
載のエポキシ樹脂成形材料において、(A)エポキシ樹
脂が下記一般式(III)で示されるエポキシ樹脂を含有
するのが好ましい。(4) In the epoxy resin molding material as described in any of (1) to (3) above, it is preferable that the epoxy resin (A) contains an epoxy resin represented by the following general formula (III).
【化8】
ただし、一般式(III)で、Rは水素原子、置換又は非
置換の炭素数1〜6のアルキル基を示し、m個全てが同
一でも異なっていてもよい。mは0又は1〜2の整数を
示し、nは0又は1〜10の整数を示す。[Chemical 8] However, in the general formula (III), R represents a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, and all m may be the same or different. m represents 0 or an integer of 1 to 2, and n represents an integer of 0 or 1 to 10.
【0009】(5) 上記(1)〜(4)のいずれか記
載のエポキシ樹脂成形材料において、(A)エポキシ樹
脂が下記一般式(IV)で示されるエポキシ樹脂を含有
するのが好ましい。(5) In the epoxy resin molding material described in any one of (1) to (4) above, it is preferable that the epoxy resin (A) contains an epoxy resin represented by the following general formula (IV).
【化9】
ただし、一般式(IV)で、R1及びR2は水素原子及び
炭素数1〜6のアルキル基からそれぞれ独立して選ば
れ、m個全てが同一でも異なっていてもよい。mは0又
は1〜6の整数を示し、nは0又は1〜10の整数を示
す。[Chemical 9] However, in the general formula (IV), R 1 and R 2 are independently selected from a hydrogen atom and an alkyl group having 1 to 6 carbon atoms, and all m may be the same or different. m represents 0 or an integer of 1 to 6, and n represents an integer of 0 or 1 to 10.
【0010】(6) 上記(1)〜(5)のいずれか記
載のエポキシ樹脂成形材料において、(A)エポキシ樹
脂が下記一般式(V)で示されるエポキシ樹脂を含有す
るのが好ましい。(6) In the epoxy resin molding material according to any one of (1) to (5), it is preferable that the epoxy resin (A) contains an epoxy resin represented by the following general formula (V).
【化10】
ただし、一般式(V)で、R1は水素原子、置換又は非
置換の炭素数1〜6のアルキル基から選ばれ、全てが同
一でも異なっていてもよい。R2及びR3は水素原子、置
換又は非置換の炭素数1〜12の炭化水素基を示し、m
は0又は1〜4の整数を示し、nは0又は1〜5の整数
を示す。[Chemical 10] However, in the general formula (V), R 1 is selected from a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, and all may be the same or different. R 2 and R 3 represent a hydrogen atom, a substituted or unsubstituted hydrocarbon group having 1 to 12 carbon atoms, and m
Represents an integer of 0 or 1 to 4, and n represents an integer of 0 or 1 to 5.
【0011】(7) 上記(1)〜(6)のいずれか記
載のエポキシ樹脂成形材料において、(A)エポキシ樹
脂が硫黄原子含有エポキシ樹脂及びビフェニル型エポキ
シ樹脂の少なくとも一方を含有するのが好ましい。(7) In the epoxy resin molding material according to any one of (1) to (6) above, it is preferable that (A) the epoxy resin contains at least one of a sulfur atom-containing epoxy resin and a biphenyl type epoxy resin. .
【0012】また、本発明は、上記(1)〜(7)のい
ずれかに記載のエポキシ樹脂成形材料により封止された
素子を備えた電子部品装置に関する。The present invention also relates to an electronic component device having an element sealed with the epoxy resin molding material according to any one of the above (1) to (7).
【0013】[0013]
【発明の実施の形態】本発明において用いられる(A)
エポキシ樹脂は、封止用のエポキシ樹脂組成物に一般に
使用されているもので特に制限はない。たとえば、フェ
ノールノボラック型エポキシ樹脂、オルソクレゾールノ
ボラック型エポキシ樹脂、トリフェニルメタン骨格を有
するエポキシ樹脂をはじめとするフェノール、クレゾー
ル、キシレノール、レゾルシン、カテコール、ビスフェ
ノールA、ビスフェノールF等のフェノール類及び/又
はα−ナフトール、β−ナフトール、ジヒドロキシナフ
タレン等のナフトール類とホルムアルデヒド、アセトア
ルデヒド、プロピオンアルデヒド、ベンズアルデヒド、
サリチルアルデヒド等のアルデヒド基を有する化合物と
を酸性触媒下で縮合又は共縮合させて得られるノボラッ
ク樹脂をエポキシ化したノボラック型エポキシ樹脂;ビ
スフェノールA、ビスフェノールF、ビスフェノールS
等のビスフェノールのジグリシジルエーテル(ビスフェ
ノール型エポキシ樹脂);アルキル置換又は非置換のビ
フェノール等のジグリシジルエーテル(ビフェニル型エ
ポキシ樹脂);スチルベン型エポキシ樹脂;ハイドロキ
ノン型エポキシ樹脂;フタル酸、ダイマー酸等の多塩基
酸とエピクロルヒドリンの反応により得られるグリシジ
ルエステル型エポキシ樹脂;ジアミノジフェニルメタ
ン、イソシアヌル酸等のポリアミンとエピクロルヒドリ
ンの反応により得られるグリシジルアミン型エポキシ樹
脂;ジシクロペンタジエンとフェノール類の共縮合樹脂
のエポキシ化物(ジシクロペンタジエン型エポキシ樹
脂);ナフタレン環を有するエポキシ樹脂(ナフタレン
型エポキシ樹脂);フェノール・アラルキル樹脂、ナフ
トール・アラルキル樹脂等のアラルキル型フェノール樹
脂のエポキシ化物;トリメチロールプロパン型エポキシ
樹脂;テルペン変性エポキシ樹脂;オレフィン結合を過
酢酸等の過酸で酸化して得られる線状脂肪族エポキシ樹
脂;脂環族エポキシ樹脂;硫黄原子含有エポキシ樹脂等
が挙げられる。これらを単独で用いても2種以上を組み
合わせて用いてもよい。なかでも、硬化性の観点からは
ノボラック型エポキシ樹脂が好ましく、低吸湿性の観点
からはジシクロペンタジエン型エポキシ樹脂を含有する
ことが好ましく、耐リフロー性及びワイヤースウィープ
の観点からはビスフェノールのジグリシジルエーテル
(ビスフェノール型エポキシ樹脂)、硫黄原子含有エポ
キシ樹脂又はビフェニル型エポキシ樹脂を含有すること
が好ましい。BEST MODE FOR CARRYING OUT THE INVENTION (A) Used in the Present Invention
The epoxy resin is generally used in the epoxy resin composition for sealing and is not particularly limited. For example, phenols such as phenol novolac type epoxy resin, ortho-cresol novolac type epoxy resin, epoxy resin having a triphenylmethane skeleton, cresol, xylenol, resorcin, catechol, bisphenol A, bisphenol A, and / or α and the like. -Naphthols such as naphthol, β-naphthol, dihydroxynaphthalene and formaldehyde, acetaldehyde, propionaldehyde, benzaldehyde,
A novolak type epoxy resin obtained by epoxidizing a novolak resin obtained by condensation or cocondensation with a compound having an aldehyde group such as salicylaldehyde under an acidic catalyst; bisphenol A, bisphenol F, bisphenol S
Such as diglycidyl ether of bisphenol (bisphenol type epoxy resin); diglycidyl ether such as alkyl-substituted or unsubstituted biphenol (biphenyl type epoxy resin); stilbene type epoxy resin; hydroquinone type epoxy resin; phthalic acid, dimer acid, etc. Glycidyl ester type epoxy resin obtained by reaction of polybasic acid and epichlorohydrin; glycidyl amine type epoxy resin obtained by reaction of polyamine such as diaminodiphenylmethane, isocyanuric acid and epichlorohydrin; epoxidized product of co-condensation resin of dicyclopentadiene and phenols (Dicyclopentadiene type epoxy resin); Epoxy resin having naphthalene ring (naphthalene type epoxy resin); Phenol / aralkyl resin, naphthol / aralkyl resin Epoxidized aralkyl type phenolic resin such as; trimethylolpropane type epoxy resin; terpene modified epoxy resin; linear aliphatic epoxy resin obtained by oxidizing olefin bond with peracid such as peracetic acid; alicyclic epoxy resin; Examples thereof include sulfur atom-containing epoxy resins. These may be used alone or in combination of two or more. Among them, a novolac type epoxy resin is preferable from the viewpoint of curability, it is preferable to contain a dicyclopentadiene type epoxy resin from the viewpoint of low hygroscopicity, and diglycidyl bisphenol from the viewpoint of reflow resistance and wire sweep. It is preferable to contain an ether (bisphenol type epoxy resin), a sulfur atom-containing epoxy resin or a biphenyl type epoxy resin.
【0014】ノボラック型エポキシ樹脂としては、たと
えば下記一般式(III)で示されるエポキシ樹脂等が挙
げられる。Examples of the novolac type epoxy resin include epoxy resins represented by the following general formula (III).
【化11】
(ここで、Rは水素原子、置換又は非置換の炭素数1〜
6のアルキル基を示し、m個全てが同一でも異なってい
てもよい。mは0又は1〜2の整数を示し、nは0又は
1〜10の整数を示す。)
上記一般式(III)で示されるノボラック型エポキシ樹
脂は、ノボラック型フェノール樹脂にエピクロルヒドリ
ンを反応させることによって容易に得られる。なかで
も、一般式(III)中のRとしては、水素原子、メチル
基、エチル基、プロピル基、ブチル基、イソプロピル
基、イソブチル基、t-ブチル基等の炭素数1〜6のアル
キル基が好ましく、水素原子又はメチル基がより好まし
く、メチル基がさらに好ましい。mは0又は1が好まし
く、1がより好ましい。nは0又は1〜5の整数が好ま
しい。上記一般式(III)で示されるノボラック型エポ
キシ樹脂の好ましい構造としては、たとえば下記一般式
(VI)で示されるオルトクレゾールノボラック型エポキ
シ樹脂が挙げられる。ノボラック型エポキシ樹脂を使用
する場合の配合量は、その性能を発揮するためにエポキ
シ樹脂全量に対して20重量%以上とすることが好まし
く、30重量%以上がより好ましく、40重量%以上が
さらに好ましい。[Chemical 11] (Here, R is a hydrogen atom, or a substituted or unsubstituted carbon number 1 to
6 represents an alkyl group, and all m may be the same or different. m represents 0 or an integer of 1 to 2, and n represents an integer of 0 or 1 to 10. The novolac type epoxy resin represented by the general formula (III) can be easily obtained by reacting a novolac type phenol resin with epichlorohydrin. Among them, R in the general formula (III) is a hydrogen atom, a methyl group, an ethyl group, a propyl group, a butyl group, an isopropyl group, an isobutyl group, an alkyl group having 1 to 6 carbon atoms such as a t-butyl group. A hydrogen atom or a methyl group is more preferable, and a methyl group is further preferable. m is preferably 0 or 1, and more preferably 1. n is preferably 0 or an integer of 1 to 5. As a preferable structure of the novolac type epoxy resin represented by the general formula (III), for example, an orthocresol novolac type epoxy resin represented by the following general formula (VI) can be mentioned. When using the novolac type epoxy resin, the compounding amount is preferably 20% by weight or more, more preferably 30% by weight or more, and further preferably 40% by weight or more based on the total amount of the epoxy resin in order to exert its performance. preferable.
【化12】 (ここで、nは0又は1〜5の整数を示す。)[Chemical 12] (Here, n represents 0 or an integer of 1 to 5.)
【0015】ジシクロペンタジエン型エポキシ樹脂とし
ては、たとえば下記一般式(IV)で示されるエポキシ樹
脂等が挙げられる。Examples of the dicyclopentadiene type epoxy resin include epoxy resins represented by the following general formula (IV).
【化13】
(ここで、R1及びR2は水素原子及び炭素数1〜6のア
ルキル基からそれぞれ独立して選ばれ、m個全てが同一
でも異なっていてもよい。mは0又は1〜6の整数を示
し、nは0又は1〜10の整数を示す。)
上記式(IV)中のR1としては、たとえば、水素原子、
メチル基、エチル基、プロピル基、ブチル基、イソプロ
ピル基、イソブチル基、t−ブチル基等の炭素数1〜6
のアルキル基が挙げられ、なかでもメチル基、エチル基
等のアルキル基及び水素原子が好ましく、メチル基及び
水素原子がより好ましい。R2としては、たとえば、水
素原子、メチル基、エチル基、プロピル基、ブチル基、
イソプロピル基、イソブチル基、t−ブチル基等の炭素
数1〜6のアルキル基が挙げられ、なかでも水素原子が
好ましい。mは0又は1が好ましく、0がより好まし
い。nは0又は1〜5の整数が好ましい。上記一般式
(IV)で示されるジシクロペンタジエン型エポキシ樹脂
の好ましい構造としては、たとえば下記一般式(VII)
で示されるジシクロペンタジエン型エポキシ樹脂が挙げ
られる。ジシクロペンタジエン型エポキシ樹脂を使用す
る場合の配合量は、その性能を発揮するためにエポキシ
樹脂全量に対して1〜30重量%とすることが好まし
く、5〜20重量%がより好ましい。[Chemical 13] (Here, R 1 and R 2 are independently selected from a hydrogen atom and an alkyl group having 1 to 6 carbon atoms, and all m may be the same or different. M is an integer of 0 or 1 to 6. And n is 0 or an integer of 1 to 10.) As R 1 in the above formula (IV), for example, a hydrogen atom,
C1-C6 such as methyl group, ethyl group, propyl group, butyl group, isopropyl group, isobutyl group, t-butyl group
And an alkyl group such as a methyl group or an ethyl group and a hydrogen atom are preferable, and a methyl group and a hydrogen atom are more preferable. Examples of R 2 include hydrogen atom, methyl group, ethyl group, propyl group, butyl group,
Examples thereof include an alkyl group having 1 to 6 carbon atoms such as an isopropyl group, an isobutyl group and a t-butyl group, and among them, a hydrogen atom is preferable. m is preferably 0 or 1, and more preferably 0. n is preferably 0 or an integer of 1 to 5. A preferred structure of the dicyclopentadiene type epoxy resin represented by the above general formula (IV) is, for example, the following general formula (VII)
A dicyclopentadiene type epoxy resin represented by When the dicyclopentadiene type epoxy resin is used, the compounding amount thereof is preferably 1 to 30% by weight, more preferably 5 to 20% by weight based on the total amount of the epoxy resin in order to exert its performance.
【化14】 (ここで、nは0又は1を示す。)[Chemical 14] (Here, n represents 0 or 1.)
【0016】ビスフェノールのジグリシジルエーテル
(ビスフェノール型エポキシ樹脂)としては、たとえば
下記一般式(V)で示されるエポキシ樹脂等が挙げられ
る。Examples of the diglycidyl ether of bisphenol (bisphenol type epoxy resin) include epoxy resins represented by the following general formula (V).
【化15】
(ここで、R1は水素原子、置換又は非置換の炭素数1
〜6のアルキル基から選ばれ、全てが同一でも異なって
いてもよい。R2及びR3は水素原子、置換又は非置換の
炭素数1〜12の炭化水素基を示し、mは0又は1〜4
の整数を示し、nは0又は1〜5の整数を示す。)
上記一般式(V)中のR1としては、たとえば、水素原
子、メチル基、エチル基、プロピル基、ブチル基、イソ
プロピル基、t−ブチル基等の炭素数1〜6のアルキル
基が挙げられ、なかでもメチル基、エチル基等のアルキ
ル基及び水素原子が好ましく、メチル基及び水素原子が
より好ましい。R2及びR3としては、たとえば、水素原
子、メチル基、エチル基、プロピル基、ブチル基、イソ
プロピル基、イソブチル基、t−ブチル基等の炭素数1
〜6のアルキル基、ビニル基、アリル基、ブテニル基等
のアルケニル基、フェニル基、ビフェニル基、1−ナフ
チル基、2−ナフチル基等のアリール基、o−トリル
基、m−トリル基、p−トリル基、2,3−キシリル
基、2,4−キシリル基、o−クメニル基、m−クメニ
ル基、p−クメニル基、メシチル基等のアルキル基置換
アリール基、ハロゲン化アルキル基、アミノ基置換アル
キル基、メルカプト基置換アルキル基などの炭素数1〜
12の置換又は非置換の一価の炭化水素基が挙げられ、
なかでも水素原子、メチル基、エチル基、フェニル基、
ビフェニル基が好ましく、メチル基及びフェニル基がよ
り好ましい。mは0、1又は2が好ましく、0がより好
ましい。nは0又は1〜3の整数が好ましい。上記一般
式(V)で示されるビスフェノールのジグリシジルエー
テルの好ましい構造としては、たとえば下記一般式(VI
II)及び(IX)で示されるエポキシ樹脂が挙げられる。ビ
スフェノールのジグリシジルエーテルを使用する場合の
配合量は、その性能を発揮するためにエポキシ樹脂全量
に対して1〜30重量%とすることが好ましく、5〜2
0重量%がより好ましい。[Chemical 15] (Here, R 1 is a hydrogen atom, a substituted or unsubstituted C 1
Selected from alkyl groups of 6 to 6, all of which may be the same or different. R 2 and R 3 represent a hydrogen atom, a substituted or unsubstituted hydrocarbon group having 1 to 12 carbon atoms, and m is 0 or 1 to 4
Is shown, and n shows the integer of 0 or 1-5. ) Examples of R 1 in the general formula (V) include a hydrogen atom, a methyl group, an ethyl group, a propyl group, a butyl group, an isopropyl group, a t-butyl group, and other alkyl groups having 1 to 6 carbon atoms. Of these, an alkyl group such as a methyl group and an ethyl group and a hydrogen atom are preferable, and a methyl group and a hydrogen atom are more preferable. R 2 and R 3 include, for example, a hydrogen atom, a methyl group, an ethyl group, a propyl group, a butyl group, an isopropyl group, an isobutyl group, a t-butyl group and the like having 1 carbon atom.
~ 6 alkyl group, vinyl group, allyl group, alkenyl group such as butenyl group, phenyl group, biphenyl group, aryl group such as 1-naphthyl group, 2-naphthyl group, o-tolyl group, m-tolyl group, p -Tolyl group, 2,3-xylyl group, 2,4-xylyl group, o-cumenyl group, m-cumenyl group, p-cumenyl group, alkyl group-substituted aryl group such as mesityl group, halogenated alkyl group, amino group Substituted alkyl groups, mercapto groups Substituted alkyl groups, etc., having 1 to 1 carbon atoms
And 12 substituted or unsubstituted monovalent hydrocarbon groups,
Among them, hydrogen atom, methyl group, ethyl group, phenyl group,
A biphenyl group is preferable, and a methyl group and a phenyl group are more preferable. m is preferably 0, 1 or 2, and more preferably 0. n is preferably 0 or an integer of 1 to 3. A preferred structure of the diglycidyl ether of bisphenol represented by the general formula (V) is, for example, the following general formula (VI
II) and epoxy resins represented by (IX). When the diglycidyl ether of bisphenol is used, the compounding amount is preferably 1 to 30% by weight based on the total amount of the epoxy resin in order to exert its performance, and 5-2.
0% by weight is more preferred.
【化16】 (ここで、nは0又は1〜3の整数を示す。)[Chemical 16] (Here, n represents 0 or an integer of 1 to 3.)
【化17】 (ここで、nは0又は1〜3の整数を示す。)[Chemical 17] (Here, n represents 0 or an integer of 1 to 3.)
【0017】硫黄原子含有エポキシ樹脂としては例えば
下記一般式(X)で示されるエポキシ樹脂等が挙げられ
る。Examples of the sulfur atom-containing epoxy resin include epoxy resins represented by the following general formula (X).
【化18】
(ここで、R1は水素原子及び置換又は非置換の炭素数1
〜6のアルキル基から選ばれ、全てが同一でも異なって
いてもよい。mは0又は1〜4の整数を示し、nは0又
は1〜3の整数を示す。)
上記一般式(X)中のR1としては、たとえば、水素原
子、メチル基、エチル基、プロピル基、ブチル基、イソ
プロピル基、イソブチル基、t−ブチル基等の炭素数1
〜6のアルキル基が挙げられ、なかでも水素原子及びメ
チル基、エチル基、プロピル基、t−ブチル基が好まし
く、水素原子、メチル基及びt−ブチル基がより好まし
い。mは0、1又は2が好ましく、2がより好ましい。
nは0、1又は2が好ましい。上記一般式(X)で示さ
れる硫黄原子含有エポキシ樹脂の好ましい構造として
は、たとえば下記一般式(XI)で示されるエポキシ樹脂が
挙げられる。[Chemical 18] (Here, R 1 is a hydrogen atom and a substituted or unsubstituted C 1 atom.
Selected from alkyl groups of 6 to 6, all of which may be the same or different. m represents an integer of 0 or 1 to 4, and n represents an integer of 0 or 1 to 3. ) R 1 in the above general formula (X) is, for example, a hydrogen atom, a methyl group, an ethyl group, a propyl group, a butyl group, an isopropyl group, an isobutyl group, a t-butyl group or the like having 1 carbon atom.
Alkyl groups of 6 to 6 are mentioned, and among them, a hydrogen atom and a methyl group, an ethyl group, a propyl group and a t-butyl group are preferable, and a hydrogen atom, a methyl group and a t-butyl group are more preferable. m is preferably 0, 1 or 2, and more preferably 2.
n is preferably 0, 1 or 2. A preferable structure of the sulfur atom-containing epoxy resin represented by the general formula (X) is, for example, an epoxy resin represented by the following general formula (XI).
【化19】
(ここで、nは0、1及び2を示す。)
硫黄原子含有エポキシ樹脂を使用する場合の配合量は、
その性能を発揮するためにエポキシ樹脂全量に対して1
〜40重量%とすることが好ましく、10〜30重量%
がより好ましい。[Chemical 19] (Here, n represents 0, 1, and 2.) When the sulfur atom-containing epoxy resin is used, the compounding amount is
1 to the total amount of epoxy resin to exert its performance
-40% by weight, preferably 10-30% by weight
Is more preferable.
【0018】ビフェニル型エポキシ樹脂としてはたとえ
ば下記一般式(XII)で示されるエポキシ樹脂等が挙げ
られる。Examples of the biphenyl type epoxy resin include epoxy resins represented by the following general formula (XII).
【化20】
(ここで、R1は水素原子及び置換又は非置換の炭素数1
〜6のアルキル基から選ばれ、全てが同一でも異なって
いてもよい。mは0又は1〜4の整数を示し、nは0又
は1〜3の整数を示す。)
上記一般式(XII)中のR1としては、たとえば、水素原
子、メチル基、エチル基、プロピル基、ブチル基、イソ
プロピル基、イソブチル基、t−ブチル基等の炭素数1
〜6のアルキル基が挙げられ、なかでも水素原子及びメ
チル基、エチル基が好ましく、水素原子及びメチル基が
より好ましい。mは0、1又は2が好ましく、2がより
好ましい。nは0、1又は2が好ましい。上記一般式
(XII)で示されるビフェニル型エポキシ樹脂の好まし
い構造としては、たとえば下記一般式(XIII)で示される
エポキシ樹脂が挙げられる。[Chemical 20] (Here, R 1 is a hydrogen atom and a substituted or unsubstituted C 1 atom.
Selected from alkyl groups of 6 to 6, all of which may be the same or different. m represents an integer of 0 or 1 to 4, and n represents an integer of 0 or 1 to 3. ) R 1 in the above general formula (XII) is, for example, a hydrogen atom, a methyl group, an ethyl group, a propyl group, a butyl group, an isopropyl group, an isobutyl group, a t-butyl group or the like having 1 carbon atom.
Alkyl groups of 6 to 6 are mentioned, among which a hydrogen atom, a methyl group and an ethyl group are preferable, and a hydrogen atom and a methyl group are more preferable. m is preferably 0, 1 or 2, and more preferably 2. n is preferably 0, 1 or 2. A preferred structure of the biphenyl type epoxy resin represented by the general formula (XII) is, for example, an epoxy resin represented by the following general formula (XIII).
【化21】
(ここで、nは0、1及び2を示す。)
ビフェニル型エポキシ樹脂を使用する場合、その配合量
は、その性能を発揮するためにエポキシ樹脂全量に対し
て1〜40重量%とすることが好ましく、10〜30重
量%がより好ましい。[Chemical 21] (Here, n represents 0, 1, and 2.) When a biphenyl type epoxy resin is used, its content should be 1 to 40% by weight based on the total amount of the epoxy resin in order to exert its performance. Is preferred, and 10 to 30% by weight is more preferred.
【0019】上記のノボラック型エポキシ樹脂、ジシク
ロペンタジエン型エポキシ樹脂、ビフェノールのジグリ
シジルエーテル、硫黄原子含有エポキシ樹脂、ビフェニ
ル型エポキシ樹脂の配合量はエポキシ樹脂全量に対して
合わせて50重量%以上とすることが好ましく、60重
量%以上がより好ましく、80重量%以上がさらに好ま
しい。さらに、上記したエポキシ樹脂を併用する場合の
割合は、(ジシクロペンタジエン型エポキシ樹脂、ビフ
ェノールのジグリシジルエーテル、硫黄原子含有エポキ
シ樹脂、ビフェニル型エポキシ樹脂)の総量/(ノボラ
ック型エポキシ樹脂)の重量比が1/5〜4/1である
ことが好ましく、1/4〜3/1がより好ましく、1/
3〜2/1がさらに好ましい。(ジシクロペンタジエン
型エポキシ樹脂、ビフェノールのジグリシジルエーテ
ル、硫黄原子含有エポキシ樹脂及びビフェニル型エポキ
シ樹脂)の総量の割合が多くなりすぎると熱時硬度が低
下する傾向にあり、ノボラック型エポキシ樹脂の割合が
多くなり過ぎると耐リフロー性が低下する傾向にある。The above novolac type epoxy resin, dicyclopentadiene type epoxy resin, biphenol diglycidyl ether, sulfur atom-containing epoxy resin, and biphenyl type epoxy resin are blended in an amount of 50% by weight or more based on the total amount of the epoxy resin. Is preferred, 60% by weight or more is more preferred, and 80% by weight or more is even more preferred. Furthermore, when the above-mentioned epoxy resin is used in combination, the ratio is (dicyclopentadiene type epoxy resin, diphenol diglycidyl ether of biphenol, sulfur atom-containing epoxy resin, biphenyl type epoxy resin) total weight / (novolak type epoxy resin) weight. The ratio is preferably 1/5 to 4/1, more preferably 1/4 to 3/1, and 1 /
3 to 2/1 is more preferable. If the total ratio of (dicyclopentadiene type epoxy resin, diglycidyl ether of biphenol, sulfur atom-containing epoxy resin and biphenyl type epoxy resin) becomes too large, the hardness at the time of heating tends to decrease, and the ratio of novolac type epoxy resin If the amount is too large, the reflow resistance tends to decrease.
【0020】本発明において用いられる(B)硬化剤
は、少なくとも、下記一般式(I)で示されるフェノー
ル樹脂を含有し、一般式(I)におけるn=1以上の成
分量が一般式(I)で示されるフェノール樹脂中に11
重量%以下であり、かつ、1分子内にフェノール性水酸
基を平均で3個以上含有する多官能フェノール成分の含
有量が(B)硬化剤全量中に10重量%未満であればよ
く、それ以外に封止用のエポキシ樹脂成形材料に一般に
使用されているものを併用することもできる。The curing agent (B) used in the present invention contains at least a phenol resin represented by the following general formula (I), and the amount of the component of n = 1 or more in the general formula (I) is represented by the general formula (I). 11) in the phenolic resin represented by
It is sufficient if the content of the polyfunctional phenol component is not more than 10% by weight and the average of three or more phenolic hydroxyl groups in one molecule is less than 10% by weight based on the total amount of the curing agent (B), and otherwise It is also possible to use in combination with a generally used epoxy resin molding material for sealing.
【化22】
(ここで、Rは水素原子、置換又は非置換の炭素数1〜
6のアルキル基を示し、mは0又は1〜2の整数、nは
0又は1〜10の整数を示す。)[Chemical formula 22] (Here, R is a hydrogen atom, or a substituted or unsubstituted carbon number 1 to
6 is an alkyl group, m is 0 or an integer of 1-2, and n is 0 or an integer of 1-10. )
【0021】上記一般式(I)中のRとしては、たとえ
ば、水素原子、メチル基、エチル基、プロピル基、ブチ
ル基、イソプロピル基、イソブチル基、t−ブチル基等
の炭素数1〜6のアルキル基が挙げられ、なかでも水素
原子、メチル基及びエチル基が好ましく、水素原子及び
メチル基がより好ましい。mは0、1又は2が好まし
く、0がより好ましい。nは0、1又は2が好ましい。
一般式(I)で示されるフェノール樹脂の好ましい構造
としては、たとえば、下記一般式(XIV)で示されるフェ
ノール樹脂が挙げられる。R in the above general formula (I) is, for example, a hydrogen atom, a methyl group, an ethyl group, a propyl group, a butyl group, an isopropyl group, an isobutyl group or a t-butyl group having 1 to 6 carbon atoms. Examples thereof include an alkyl group, of which a hydrogen atom, a methyl group and an ethyl group are preferable, and a hydrogen atom and a methyl group are more preferable. m is preferably 0, 1 or 2, and more preferably 0. n is preferably 0, 1 or 2.
A preferred structure of the phenol resin represented by the general formula (I) includes, for example, a phenol resin represented by the following general formula (XIV).
【化23】
上記一般式(I)で示されるフェノール樹脂は、nが0
又は1〜10の整数で示される構造を構成成分としてい
るが、それらの割合としてn=1以上の成分量が一般式
(I)で示されるフェノール樹脂全体の11重量%以下
であり、10重量%以下が好ましく、5重量%以下がよ
り好ましい。11重量%より大きいと流動性、耐リフロ
ー性及びワイヤースウィープ性が低下する傾向にある。
一般式(I)で示されるフェノール樹脂のn=1以上の
構成成分量は、従来公知の方法によって求めることがで
き、たとえば、ゲルパーミエーションクロマトグラフで
測定した面積比から求めることができる。[Chemical formula 23] In the phenol resin represented by the general formula (I), n is 0.
Alternatively, the structure represented by an integer of 1 to 10 is used as a constituent component, but the ratio of the components is n = 1 or more, and the amount is 11% by weight or less of the entire phenol resin represented by the general formula (I), and 10% by weight. % Or less is preferable, and 5% by weight or less is more preferable. When it is more than 11% by weight, the fluidity, the reflow resistance and the wire sweep property tend to be deteriorated.
The amount of the constituent component of n = 1 or more of the phenol resin represented by the general formula (I) can be obtained by a conventionally known method, for example, from the area ratio measured by gel permeation chromatography.
【0022】本発明の効果を得るためには、一般式
(I)で示されるフェノール樹脂中のn=0の成分量が
重要であり、それらは下記一般式(XV)〜(XVII)で示
される異性体構造をとることができる。これら異性体の
比率は特に限定されるものではないが、一般式(I)で
示されるフェノール樹脂中のn=0の成分全量中に、一
般式(XVII)で示される構造が10〜60重量%である
ことが好ましく、20〜40重量%であることがより好
ましい。10重量%より少ないとフェノール樹脂の軟化
点が低くなり作業性が低下する傾向にあり、60重量%
より多くなるとフェノール樹脂の軟化点が高くなりエポ
キシ樹脂成形材料中での分散が不十分になる傾向があ
る。In order to obtain the effects of the present invention, the amount of the component of n = 0 in the phenol resin represented by the general formula (I) is important, and they are represented by the following general formulas (XV) to (XVII). Can have an isomeric structure. The ratio of these isomers is not particularly limited, but the structure represented by the general formula (XVII) is contained in the phenol resin represented by the general formula (I) in an amount of 10 to 60% by weight in the total amount of n = 0 components. %, More preferably 20 to 40% by weight. If it is less than 10% by weight, the softening point of the phenolic resin tends to be low and the workability tends to be low.
When the amount is larger, the softening point of the phenol resin becomes higher and the dispersion in the epoxy resin molding material tends to be insufficient.
【化24】 [Chemical formula 24]
【化25】 [Chemical 25]
【化26】 [Chemical formula 26]
【0023】本発明の(B)硬化剤として前記一般式
(I)で示されるフェノール樹脂に併用できる硬化剤と
しては、封止用のエポキシ樹脂組成物に一般に使用され
ているもので特に制限はない。たとえば、フェノール、
クレゾール、レゾルシン、カテコール、ビスフェノール
A、フェニルフェノール、アミノフェノール等のフェノ
ール類及び/又はα−ナフトール、β−ナフトール、ジ
ヒドロキシナフタレン等のナフトール類とホルムアルデ
ヒド、アセトアルデヒド、プロピオンアルデヒド、ベン
ズアルデヒド、サリチルアルデヒド等のアルデヒド基を
有する化合物とを酸性触媒下で縮合又は共縮合させて得
られるノボラック型フェノール樹脂;フェノール類及び
/又はナフトール類とジメトキシパラキシレン又はビス
(メトキシメチル)ビフェニルから合成されるフェノー
ル・アラルキル樹脂、ナフトール・アラルキル樹脂等の
アラルキル型フェノール樹脂;フェノール類及び/又は
ナフトール類とシクロペンタジエンから共重合により合
成される、ジシクロペンタジエン型フェノール樹脂、ジ
シクロペンタジエン型ナフトール樹脂;テルペン変性フ
ェノール樹脂;ビフェニル型フェノール樹脂;トリフェ
ニルメタン型フェノール樹脂などが挙げられ、これらを
単独で用いても2種以上を組合わせて用いてもよい。な
かでも、低吸湿性の観点からはジシクロペンタジエン型
フェノール樹脂が好ましい。The curing agent (B) of the present invention which can be used in combination with the phenol resin represented by the general formula (I) is a curing agent which is generally used in epoxy resin compositions for encapsulation and is not particularly limited. Absent. For example, phenol,
Phenols such as cresol, resorcin, catechol, bisphenol A, phenylphenol and aminophenol and / or naphthols such as α-naphthol, β-naphthol and dihydroxynaphthalene and aldehydes such as formaldehyde, acetaldehyde, propionaldehyde, benzaldehyde and salicylaldehyde. A novolac-type phenol resin obtained by condensation or co-condensation with a compound having a group under an acidic catalyst; a phenol / aralkyl resin synthesized from phenols and / or naphthols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl, Aralkyl-type phenolic resins such as naphthol / aralkyl resins; dicyclosynthesized by copolymerization of phenols and / or naphthols and cyclopentadiene Pentadiene-type phenol resin, dicyclopentadiene-type naphthol resin, terpene-modified phenol resin, biphenyl-type phenol resin, triphenylmethane-type phenol resin, etc. may be used alone or in combination of two or more kinds. Good. Among them, dicyclopentadiene type phenol resin is preferable from the viewpoint of low hygroscopicity.
【0024】ジシクロペンタジエン型フェノール樹脂と
しては、たとえば下記一般式(II)で示されるフェノー
ル樹脂等が挙げられる。Examples of the dicyclopentadiene type phenol resin include phenol resins represented by the following general formula (II).
【化27】
(ここで、R1及びR2は水素原子及び炭素数1〜6のア
ルキル基からそれぞれ独立して選ばれ、m個全てが同一
でも異なっていてもよい。mは0又は1〜6の整数を示
し、nは0又は1〜10の整数を示す。)
上記一般式(II)中のR1及びR2としては、たとえば、
水素原子、メチル基、エチル基、プロピル基、ブチル
基、イソプロピル基、イソブチル基、t−ブチル基等の
炭素数1〜6のアルキル基が挙げられ、なかでも水素原
子及びメチル基が好ましく、水素原子がより好ましい。
nは0又は1〜10の整数を任意に取ることができる
が、n=1以上の整数で表される成分量が一般式(II)
中の30重量%以下であることが好ましく、20重量%
以下がより好ましい。30重量%より多いと流動性が低
下する傾向にある。また、上記一般式(II)で示される
ジシクロペンタジエン型フェノール樹脂に含まれる各成
分のnを一般式(II)で示されるジシクロペンタジエン
型フェノール樹脂全体で平均した場合、nの平均は0以
上0.5未満が好ましく、0〜0.4がより好ましく、
0〜0.3がさらに好ましい。ここで、nの平均が0の
場合、上記一般式(II)で示されるジシクロペンタジエ
ン型フェノール樹脂は2官能成分のみから構成されてい
ることを示し、nの平均が1の場合、上記一般式(II)
で示されるジシクロペンタジエン型フェノール樹脂は全
体として3官能性のフェノール樹脂として考えることが
できる。nの平均が0.5以上であると、流動性が低下
する傾向がある。[Chemical 27] (Here, R 1 and R 2 are independently selected from a hydrogen atom and an alkyl group having 1 to 6 carbon atoms, and all m may be the same or different. M is an integer of 0 or 1 to 6. And n represents 0 or an integer of 1 to 10.) Examples of R 1 and R 2 in the general formula (II) include, for example,
Examples thereof include a hydrogen atom, a methyl group, an ethyl group, a propyl group, a butyl group, an isopropyl group, an isobutyl group, and an alkyl group having 1 to 6 carbon atoms such as a t-butyl group. Among them, a hydrogen atom and a methyl group are preferable, and a hydrogen atom is preferable. Atoms are more preferred.
n may be 0 or an integer of 1 to 10, but the component amount represented by an integer of n = 1 or more is represented by the general formula (II).
30% by weight or less, preferably 20% by weight
The following is more preferable. If it is more than 30% by weight, the fluidity tends to decrease. In addition, when n of each component contained in the dicyclopentadiene type phenol resin represented by the general formula (II) is averaged over the entire dicyclopentadiene type phenol resin represented by the general formula (II), the average of n is 0. It is preferably 0.5 or more and less than 0.5, more preferably 0 to 0.4,
0 to 0.3 is more preferable. Here, when the average of n is 0, it means that the dicyclopentadiene type phenol resin represented by the general formula (II) is composed of only bifunctional components, and when the average of n is 1, the above general Formula (II)
The dicyclopentadiene type phenolic resin represented by can be considered as a trifunctional phenolic resin as a whole. If the average value of n is 0.5 or more, the fluidity tends to decrease.
【0025】上記一般式(II)で示されるジシクロペン
タジエン型フェノール樹脂の軟化点としては、特に制限
なく用いることができるが、本発明のエポキシ樹脂成形
材料中に均一に混合するためには、40℃〜110℃の
範囲であることが好ましく、さらに耐リフロー性の観点
からは50℃〜90℃が好ましい。一般式(II)で示さ
れるジシクロペンタジエン型フェノール樹脂の好ましい
構造としては、たとえば下記一般式(XVIII)で示され
るジシクロペンタジエン型フェノール樹脂が挙げられ
る。The softening point of the dicyclopentadiene type phenolic resin represented by the general formula (II) can be used without particular limitation, but in order to mix it uniformly in the epoxy resin molding material of the present invention, The temperature is preferably in the range of 40 ° C to 110 ° C, and more preferably 50 ° C to 90 ° C from the viewpoint of reflow resistance. A preferred structure of the dicyclopentadiene type phenol resin represented by the general formula (II) is, for example, a dicyclopentadiene type phenol resin represented by the following general formula (XVIII).
【化28】
(ここで、nは0又は1〜10の整数を示す。)
ジシクロペンタジエン型フェノール樹脂を用いる場合、
その配合量は、その性能を発揮するために硬化剤全量に
対して20〜80重量%とすることが好ましく、30〜
70重量%以上がより好ましく、40〜65重量%がさ
らに好ましい。20重量%より少ない場合は、添加効果
が十分に発揮されず、80重量%より多い場合は流動性
が低下する傾向にある。[Chemical 28] (Here, n represents 0 or an integer of 1 to 10.) When a dicyclopentadiene type phenol resin is used,
The compounding amount thereof is preferably 20 to 80% by weight based on the total amount of the curing agent in order to exert its performance, and 30 to 30% by weight.
70% by weight or more is more preferable, and 40 to 65% by weight is further preferable. If it is less than 20% by weight, the effect of addition is not sufficiently exerted, and if it is more than 80% by weight, the fluidity tends to decrease.
【0026】(A)エポキシ樹脂と(B)硬化剤との当
量比、すなわち、エポキシ樹脂中のエポキシ基数に対す
る硬化剤中の水酸基数の比(硬化剤中の水酸基数/エポ
キシ樹脂中のエポキシ基数)は、特に制限はないが、そ
れぞれの未反応分を少なく抑えるために0.5〜2の範
囲に設定されることが好ましく、0.6〜1.3がより
好ましい。成形性及び耐半田リフロー性に優れるエポキ
シ樹脂成形材料を得るためには0.8〜1.2の範囲に
設定されることがさらに好ましい。Equivalent ratio of (A) epoxy resin to (B) curing agent, that is, ratio of number of hydroxyl groups in curing agent to number of epoxy groups in epoxy resin (number of hydroxyl groups in curing agent / number of epoxy groups in epoxy resin) ) Is not particularly limited, but is preferably set in the range of 0.5 to 2 and more preferably 0.6 to 1.3 in order to suppress the unreacted content of each. In order to obtain an epoxy resin molding material having excellent moldability and solder reflow resistance, the range is more preferably set to 0.8 to 1.2.
【0027】本発明において用いられる(C)硬化促進
剤としては、エポキシ樹脂成形材料で一般に使用されて
いるもので特に制限はないが、たとえば、1,8−ジア
ザビシクロ[5.4.0]ウンデセン−7、1,5−ジ
アザビシクロ[4.3.0]ノネン−5、5,6−ジブ
チルアミノ−1,8−ジアザビシクロ[5.4.0]ウ
ンデセン−7等のシクロアミジン化合物及びこれらの化
合物に無水マレイン酸、1,4−ベンゾキノン、2,5
−トルキノン、1,4−ナフトキノン、2,3−ジメチ
ルベンゾキノン、2,6−ジメチルベンゾキノン、2,
3−ジメトキシ−5−メチル−1,4ベンゾキノン、
2,3−ジメトキシ−1,4−ベンゾキノン、フェニル
−1,4−ベンゾキノン等のキノン化合物、ジアゾフェ
ニルメタン、フェノール樹脂等のπ結合をもつ化合物を
付加してなる分子内分極を有する化合物、ベンジルジメ
チルアミン、トリエタノールアミン、ジメチルアミノエ
タノール、トリス(ジメチルアミノメチル)フェノール
等の三級アミン類及びこれらの誘導体、2−メチルイミ
ダゾール、2−フェニルイミダゾール、2―フェニル−
4−メチルイミダゾール、2−ヘプタデシルイミダゾー
ル等のイミダゾール類及びこれらの誘導体、トリブチル
ホスフィン、メチルジフェニルホスフィン、トリフェニ
ルホスフィン、トリス(4−メチルフェニル)ホスフィ
ン、ジフェニルホスフィン、フェニルホスフィン等の有
機ホスフィン類及びこれらのホスフィン類に無水マレイ
ン酸、上記キノン化合物、ジアゾフェニルメタン、フェ
ノール樹脂等のπ結合をもつ化合物を付加してなる分子
内分極を有するリン化合物、テトラフェニルホスホニウ
ムテトラフェニルボレート、テトラフェニルホスホニウ
ムエチルトリフェニルボレート、テトラブチルホスホニ
ウムテトラブチルボレート等のテトラ置換ホスホニウム
・テトラ置換ボレート、2−エチル−4−メチルイミダ
ゾール・テトラフェニルボレート、N−メチルモルホリ
ン・テトラフェニルボレート等のテトラフェニルボロン
塩及びこれらの誘導体などが挙げられ、これらの1種を
単独で用いても2種以上組み合わせて用いてもよい。な
かでも、硬化性及び流動性の観点からは第三ホスフィン
とキノン化合物との付加物が好ましく、保存安定性の観
点からはシクロアミジン化合物とフェノール樹脂との付
加物が好ましく、ジアザビシクロウンデセンのフェノー
ルノボラック樹脂塩がより好ましい。これらの硬化促進
剤の配合量は硬化促進剤全量に対して合わせて60重量
%以上が好ましく、80重量%以上がより好ましい。The (C) curing accelerator used in the present invention is generally used in epoxy resin molding materials and is not particularly limited. For example, 1,8-diazabicyclo [5.4.0] undecene is used. Cycloamidine compounds such as -7,1,5-diazabicyclo [4.3.0] nonene-5,5,6-dibutylamino-1,8-diazabicyclo [5.4.0] undecene-7 and compounds thereof Maleic anhydride, 1,4-benzoquinone, 2,5
-Toluquinone, 1,4-naphthoquinone, 2,3-dimethylbenzoquinone, 2,6-dimethylbenzoquinone, 2,
3-dimethoxy-5-methyl-1,4 benzoquinone,
A compound having an intramolecular polarization formed by adding a quinone compound such as 2,3-dimethoxy-1,4-benzoquinone and phenyl-1,4-benzoquinone, and a compound having a π bond such as diazophenylmethane and phenol resin, benzyl Tertiary amines such as dimethylamine, triethanolamine, dimethylaminoethanol, tris (dimethylaminomethyl) phenol and their derivatives, 2-methylimidazole, 2-phenylimidazole, 2-phenyl-
Imidazoles such as 4-methylimidazole and 2-heptadecylimidazole and derivatives thereof, organic phosphines such as tributylphosphine, methyldiphenylphosphine, triphenylphosphine, tris (4-methylphenyl) phosphine, diphenylphosphine and phenylphosphine, and A phosphorus compound having an intramolecular polarization formed by adding a compound having a π bond such as maleic anhydride, the above quinone compound, diazophenylmethane, or a phenol resin to these phosphines, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium ethyl Tetra-substituted phosphonium / tetra-substituted borate such as triphenyl borate, tetrabutyl phosphonium tetrabutyl borate, 2-ethyl-4-methyl imidazole / tetraf Niruboreto, N- such tetraphenyl boron salts and derivatives thereof such as methyl morpholine tetraphenylborate and the like, may be used in combination of two or more kinds with these alone. Among them, an adduct of a tertiary phosphine and a quinone compound is preferable from the viewpoint of curability and fluidity, an adduct of a cycloamidine compound and a phenol resin is preferable from the viewpoint of storage stability, and diazabicycloundecene is preferable. The phenol novolac resin salt of is more preferable. The total content of these curing accelerators is preferably 60% by weight or more, more preferably 80% by weight or more, based on the total amount of the curing accelerators.
【0028】第三ホスフィンとキノン化合物との付加物
に用いられる第三ホスフィンとしては特に制限はない
が、たとえば、トリブチルホスフィン、トリシクロヘキ
シルホスフィン、ジブチルフェニルホスフィン、ブチル
ジフェニルホスフィン、エチルジフェニルホスフィン、
トリフェニルホスフィン、トリス(4−メチルフェニ
ル)ホスフィン、トリス(4−エチルフェニル)ホスフ
ィン、トリス(4−プロピルフェニル)ホスフィン、ト
リス(4−ブチルフェニル)ホスフィン、トリス(イソ
プロピルフェニル)ホスフィン、トリス(t−ブチルフ
ェニル)ホスフィン、トリス(2,4−ジメチルフェニ
ル)ホスフィン、トリス(2,6−ジメチルフェニル)
ホスフィン、トリス(2,4,6−トリメチルフェニル)
ホスフィン、トリス(2,6−ジメチル−4−エトキシ
フェニル)ホスフィン、トリス(4−メトキシフェニ
ル)ホスフィン、トリス(4−エトキシフェニル)ホス
フィン等のアリール基を有する第三ホスフィンが挙げら
れ、成形性の点からはトリフェニルホスフィン又はトリ
ス(4−メチルフェニル)ホスフィンが好ましい。ま
た、第三ホスフィンとキノン化合物との付加物に用いら
れるキノン化合物としては特に制限はないが、たとえ
ば、o−ベンゾキノン、p−ベンゾキノン、ジフェノキ
ノン、1,4−ナフトキノン、アントラキノン等が挙げ
られ、流動性の観点からはp−ベンゾキノンが好まし
い。The third phosphine used in the adduct of the third phosphine and the quinone compound is not particularly limited, and examples thereof include tributylphosphine, tricyclohexylphosphine, dibutylphenylphosphine, butyldiphenylphosphine, ethyldiphenylphosphine,
Triphenylphosphine, tris (4-methylphenyl) phosphine, tris (4-ethylphenyl) phosphine, tris (4-propylphenyl) phosphine, tris (4-butylphenyl) phosphine, tris (isopropylphenyl) phosphine, tris (t -Butylphenyl) phosphine, tris (2,4-dimethylphenyl) phosphine, tris (2,6-dimethylphenyl)
Phosphine, tris (2,4,6-trimethylphenyl)
Examples of the third phosphine having an aryl group such as phosphine, tris (2,6-dimethyl-4-ethoxyphenyl) phosphine, tris (4-methoxyphenyl) phosphine, and tris (4-ethoxyphenyl) phosphine are mentioned. From the viewpoint, triphenylphosphine or tris (4-methylphenyl) phosphine is preferable. Further, the quinone compound used as the adduct of the tertiary phosphine and the quinone compound is not particularly limited, but examples thereof include o-benzoquinone, p-benzoquinone, diphenoquinone, 1,4-naphthoquinone, anthraquinone, and the like. From the viewpoint of sex, p-benzoquinone is preferable.
【0029】硬化促進剤の配合量は、硬化促進効果が達
成される量であれば特に限定されるものではないが、
(A)エポキシ樹脂と(B)硬化剤の合計量100重量
部に対して0.1〜10重量部が好ましく、0.3〜5
重量部がより好ましい。0.1重量部未満では短時間で
硬化させることが困難となり、10重量部を超えると硬
化速度が早すぎて良好な成形品が得られない傾向があ
る。The compounding amount of the curing accelerator is not particularly limited as long as the curing promoting effect is achieved,
0.1 to 10 parts by weight is preferable with respect to 100 parts by weight of the total amount of (A) epoxy resin and (B) curing agent, and 0.3 to 5 parts by weight.
More preferably parts by weight. If it is less than 0.1 part by weight, it is difficult to cure it in a short time, and if it exceeds 10 parts by weight, the curing rate tends to be too fast to obtain a good molded product.
【0030】本発明において用いられる(D)無機充填
剤は、吸湿性、線膨張係数低減、熱伝導性向上及び強度
向上のためにエポキシ樹脂成形材料に配合されるもので
あり、例えば、溶融シリカ、結晶シリカ、アルミナ、ジ
ルコン、珪酸カルシウム、炭酸カルシウム、チタン酸カ
リウム、炭化珪素、窒化珪素、窒化アルミ、窒化ホウ
素、ベリリア、ジルコニア、ジルコン、フォステライ
ト、ステアタイト、スピネル、ムライト、チタニア等の
粉体、又はこれらを球形化したビーズ、ガラス繊維など
が挙げられ、これらの1種を単独で用いても2種以上を
組合わせて用いてもよい。さらに、難燃効果のある無機
充填剤としては水酸化アルミニウム、水酸化マグネシウ
ム、硼酸亜鉛、モリブデン酸亜鉛、マグネシウムと亜鉛
の複合水酸化物等の複合金属水酸化物などが挙げられ、
これらの1種を単独で用いても2種以上を組合わせて用
いてもよい。なかでも、線膨張係数低減の観点からは溶
融シリカが、高熱伝導性の観点からはアルミナが好まし
い。充填剤の形状は、成形時の流動性又は金型摩耗性の
点からは球形又は球状に近い形が好ましい。(D)無機
充填剤の配合量は、成形性、吸湿性、線膨張係数の低減
及び強度向上の観点から、エポキシ樹脂成形材料に対し
て70重量%以上が好ましく、80重量%より多く95
重量%以下がより好ましい。70重量%未満では耐リフ
ロークラック性が低下する傾向があり、95重量%を超
えると流動性が不足する傾向がある。The inorganic filler (D) used in the present invention is added to the epoxy resin molding material for the purposes of hygroscopicity, reduction of linear expansion coefficient, improvement of thermal conductivity and improvement of strength, for example, fused silica. Powder of crystalline silica, alumina, zircon, calcium silicate, calcium carbonate, potassium titanate, silicon carbide, silicon nitride, aluminum nitride, boron nitride, beryllia, zirconia, zircon, fosterite, steatite, spinel, mullite, titania, etc. Examples thereof include a body, beads made of spherical particles, glass fiber, and the like, and one of these may be used alone, or two or more thereof may be used in combination. Furthermore, examples of the inorganic filler having a flame retardant effect include aluminum hydroxide, magnesium hydroxide, zinc borate, zinc molybdate, complex metal hydroxides such as complex hydroxide of magnesium and zinc, and the like.
These 1 type may be used individually or may be used in combination of 2 or more type. Of these, fused silica is preferable from the viewpoint of reducing the linear expansion coefficient, and alumina is preferable from the viewpoint of high thermal conductivity. The shape of the filler is preferably a sphere or a shape close to a sphere from the viewpoint of fluidity at the time of molding or abrasion of the mold. The blending amount of the inorganic filler (D) is preferably 70% by weight or more, and more than 80% by weight, based on the epoxy resin molding material, from the viewpoints of moldability, hygroscopicity, reduction of linear expansion coefficient and improvement of strength.
It is more preferably less than or equal to wt%. If it is less than 70% by weight, the reflow crack resistance tends to decrease, and if it exceeds 95% by weight, the fluidity tends to be insufficient.
【0031】また、本発明のエポキシ樹脂成形材料に
は、樹脂成分と無機充填剤との接着性を高めるために、
必要に応じて、エポキシシラン、メルカプトシラン、ア
ミノシラン、アルキルシラン、メタクリルシラン、ウレ
イドシラン、ビニルシラン等の各種シラン系化合物、チ
タン系化合物、アルミニウムキレート類、アルミニウム
/ジルコニウム系化合物等の公知のカップリング剤を添
加することができる。これらを例示すると、ビニルトリ
クロロシラン、ビニルトリエトキシシラン、ビニルトリ
ス(β−メトキシエトキシ)シラン、γ−メタクリロキ
シプロピルトリメトキシシラン、γ−メタクリロキシプ
ロピルトリエトキシシラン、γ−アクリロキシプロピル
トリメトキシシラン、β−(3,4−エポキシシクロヘ
キシル)エチルトリメトキシシラン、γ−グリシドキシ
プロピルトリメトキシシラン、γ−グリシドキシプロピ
ルメチルジメトキシシラン、ビニルトリアセトキシシラ
ン、γ−メルカプトプロピルトリメトキシシラン、γ−
アミノプロピルトリエトキシシラン、γ-アニリノプロ
ピルトリメトキシシラン、γ-アニリノプロピルメチル
ジメトキシシラン、γ−[ビス(β−ヒドロキシエチ
ル)]アミノプロピルトリエトキシシラン、N−β−
(アミノエチル)−γ−アミノプロピルトリメトキシシ
ラン、γ−(β−アミノエチル)アミノプロピルジメト
キシメチルシラン、N−(トリメトキシシリルプロピ
ル)エチレンジアミン、N−(ジメトキシメチルシリル
イソプロピル)エチレンジアミン、メチルトリメトキシ
シラン、ジメチルジメトキシシラン、メチルトリエトキ
シシラン、N−β−(N−ビニルベンジルアミノエチ
ル)−γ−アミノプロピルトリメトキシシラン、γ−ク
ロロプロピルトリメトキシシラン、ヘキサメチルジシラ
ン、ビニルトリメトキシシラン、γ−メルカプトプロピ
ルメチルジメトキシシラン、γ−メタクリロキシプロピ
ルトリメトキシシラン、γ−メタクリロキシプロピルト
リエトキシシラン、γ−アクリロキシプロピルトリメト
キシシラン、γ−アクリロキシプロピルトリエトキシシ
ラン等のシラン系カップリング剤、イソプロピルトリイ
ソステアロイルチタネート、イソプロピルトリス(ジオ
クチルパイロホスフェート)チタネート、イソプロピル
トリ(N−アミノエチル−アミノエチル)チタネート、
テトラオクチルビス(ジトリデシルホスファイト)チタ
ネート、テトラ(2,2−ジアリルオキシメチル−1−
ブチル)ビス(ジトリデシル)ホスファイトチタネー
ト、ビス(ジオクチルパイロホスフェート)オキシアセ
テートチタネート、ビス(ジオクチルパイロホスフェー
ト)エチレンチタネート、イソプロピルトリオクタノイ
ルチタネート、イソプロピルジメタクリルイソステアロ
イルチタネート、イソプロピルトリドデシルベンゼンス
ルホニルチタネート、イソプロピルイソステアロイルジ
アクリルチタネート、イソプロピルトリ(ジオクチルホ
スフェート)チタネート、イソプロピルトリクミルフェ
ニルチタネート、テトライソプロピルビス(ジオクチル
ホスファイト)チタネート等のチタネート系カップリン
グ剤などが挙げられ、これらの1種を単独で用いても2
種以上を組み合わせて用いてもよい。Further, in the epoxy resin molding material of the present invention, in order to enhance the adhesiveness between the resin component and the inorganic filler,
If necessary, various known silane compounds such as epoxysilane, mercaptosilane, aminosilane, alkylsilane, methacrylsilane, ureidosilane, vinylsilane, titanium compounds, aluminum chelates, aluminum / zirconium compounds, etc. Can be added. These are exemplified by vinyltrichlorosilane, vinyltriethoxysilane, vinyltris (β-methoxyethoxy) silane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropyltriethoxysilane, γ-acryloxypropyltrimethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, vinyltriacetoxysilane, γ-mercaptopropyltrimethoxysilane, γ-
Aminopropyltriethoxysilane, γ-anilinopropyltrimethoxysilane, γ-anilinopropylmethyldimethoxysilane, γ- [bis (β-hydroxyethyl)] aminopropyltriethoxysilane, N-β-
(Aminoethyl) -γ-aminopropyltrimethoxysilane, γ- (β-aminoethyl) aminopropyldimethoxymethylsilane, N- (trimethoxysilylpropyl) ethylenediamine, N- (dimethoxymethylsilylisopropyl) ethylenediamine, methyltrimethoxy Silane, dimethyldimethoxysilane, methyltriethoxysilane, N-β- (N-vinylbenzylaminoethyl) -γ-aminopropyltrimethoxysilane, γ-chloropropyltrimethoxysilane, hexamethyldisilane, vinyltrimethoxysilane, γ -Mercaptopropylmethyldimethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropyltriethoxysilane, γ-acryloxypropyltrimethoxysilane, γ-acryloxy Silane coupling agents such as propyltriethoxysilane, isopropyltriisostearoyl titanate, isopropyl tris (dioctyl pyrophosphate) titanate, isopropyl tri (N-aminoethyl-aminoethyl) titanate,
Tetraoctyl bis (ditridecyl phosphite) titanate, tetra (2,2-diallyloxymethyl-1-
Butyl) bis (ditridecyl) phosphite titanate, bis (dioctyl pyrophosphate) oxyacetate titanate, bis (dioctyl pyrophosphate) ethylene titanate, isopropyl trioctanoyl titanate, isopropyl dimethacryl isostearoyl titanate, isopropyl tridodecylbenzene sulfonyl titanate, isopropyl Titanate coupling agents such as isostearoyl diacrylic titanate, isopropyl tri (dioctyl phosphate) titanate, isopropyl tricumyl phenyl titanate, tetraisopropyl bis (dioctyl phosphite) titanate, etc. can be mentioned, and one of these can be used alone. Also 2
You may use it in combination of 2 or more types.
【0032】上記カップリング剤の配合量は、(D)無
機充填剤に対して0.05〜5重量%であることが好ま
しく、0.1〜2.5重量%がより好ましい。0.05
重量%未満ではフレームとの接着性が低下する傾向があ
り、5重量%を超えると成形性が低下する傾向がある。The amount of the coupling agent blended is preferably 0.05 to 5% by weight, and more preferably 0.1 to 2.5% by weight, based on the inorganic filler (D). 0.05
If it is less than 5% by weight, the adhesiveness to the frame tends to decrease, and if it exceeds 5% by weight, the moldability tends to decrease.
【0033】本発明のエポキシ樹脂成形材料には従来公
知の難燃剤を必要に応じて配合することができる。たと
えば、水酸化アルミニウム、水酸化マグネシウム、酸化
亜鉛、錫酸亜鉛、硼酸亜鉛、酸化鉄、酸化アンチモン、
酸化モリブデン、モリブデン酸亜鉛等の金属元素を含む
無機化合物;赤リン、リン酸エステル、ホスフィンオキ
サイト等のリン化合物;メラミン、メラミン誘導体、メ
ラミン変性フェノール樹脂、トリアジン環を有する化合
物、シアヌル酸誘導体、イソシアヌル酸誘導体等の窒素
含有化合物;シクロホスファゼン等のリン及び窒素含有
化合物;臭素化エポキシ樹脂、臭素化フェノール樹脂等
の難燃性ハロゲン化物;ジシクロペンタジエニル鉄等の
有機金属化合物;下記組成式(XIX)で示される複合金
属水酸化物などが挙げられる。これらの1種を単独で用
いても2種以上を組合わせて用いてもよい。また、上記
に示した難燃剤のうち、無機系のものは、エポキシ樹脂
成形材料への分散性を上げる、吸湿による分解を防ぐ、
硬化性を上げるなどの目的で有機物からなる被覆が施さ
れていてもよい。The epoxy resin molding material of the present invention may optionally contain a conventionally known flame retardant. For example, aluminum hydroxide, magnesium hydroxide, zinc oxide, zinc stannate, zinc borate, iron oxide, antimony oxide,
Inorganic compounds containing metal elements such as molybdenum oxide and zinc molybdate; phosphorus compounds such as red phosphorus, phosphoric acid esters and phosphine oxides; melamine, melamine derivatives, melamine modified phenolic resins, compounds having triazine ring, cyanuric acid derivatives, Nitrogen-containing compounds such as isocyanuric acid derivatives; phosphorus- and nitrogen-containing compounds such as cyclophosphazenes; flame-retardant halides such as brominated epoxy resins and brominated phenol resins; organometallic compounds such as dicyclopentadienyl iron; Examples thereof include complex metal hydroxides represented by the formula (XIX). These 1 type may be used individually or may be used in combination of 2 or more type. In addition, among the flame retardants shown above, inorganic ones improve dispersibility in epoxy resin molding materials, prevent decomposition due to moisture absorption,
A coating made of an organic material may be applied for the purpose of increasing curability.
【化29】
p(M1 aOb)・q(M2 cOd)・r(M3 cOd)・mH2O (XIX)
(ここで、M1、M2及びM3は互いに異なる金属元素を
示し、a、b、c、d、p、q及びmは正の数、rは0又は
正の数を示す。)Embedded image p (M 1 a O b ) .q (M 2 c O d ) .r (M 3 c O d ) .mH 2 O (XIX) (wherein M 1 , M 2 and M 3 are A metal element different from each other is shown, and a, b, c, d, p, q and m are positive numbers and r is 0 or a positive number.)
【0034】上記組成式(XIX)中のM1、M2及びM3は
互いに異なる金属元素であれば特に制限はないが、難燃
性の観点からは、M1が第3周期の金属元素、IIA族の
アルカリ土類金属元素、IVB族、IIB族、VIII族、IB
族、IIIA族及びIVA族に属する金属元素から選ばれ、
M2がIIIB〜IIB族の遷移金属元素から選ばれることが
好ましく、M1がマグネシウム、カルシウム、アルミニ
ウム、スズ、チタン、鉄、コバルト、ニッケル、銅及び
亜鉛から選ばれ、M2が鉄、コバルト、ニッケル、銅及
び亜鉛から選ばれることがより好ましい。流動性の観点
からは、M1がマグネシウム、M2が亜鉛又はニッケル
で、r=0のものが好ましい。p、q及びrのモル比は
特に制限はないが、r=0で、p/qが1/99〜1/
1であることが好ましい。なお、金属元素の分類は、典
型元素をA亜族、遷移元素をB亜族とする長周期型の周
期率表(出典:共立出版株式会社発行「化学大辞典4」
1987年2月15日縮刷版第30刷)に基づいて行っ
た。There is no particular limitation on M 1 , M 2 and M 3 in the composition formula (XIX) as long as they are different metal elements, but from the viewpoint of flame retardancy, M 1 is a metal element of the third period. , Group IIA alkaline earth metal elements, Group IVB, Group IIB, Group VIII, IB
Selected from the group consisting of metal elements belonging to Group IIIA, Group IIIA and Group IVA,
M 2 is preferably selected from Group IIIB to IIB transition metal elements, M 1 is selected from magnesium, calcium, aluminum, tin, titanium, iron, cobalt, nickel, copper and zinc, and M 2 is iron or cobalt. More preferably, it is selected from nickel, copper, and zinc. From the viewpoint of fluidity, it is preferable that M 1 is magnesium, M 2 is zinc or nickel, and r = 0. The molar ratio of p, q and r is not particularly limited, but when r = 0, p / q is 1/99 to 1 /
It is preferably 1. In addition, the classification of metallic elements is a periodic table of a long period type in which a typical element is a subgroup A and a transition element is a subgroup B (Source: Kyoritsu Shuppan Co., Ltd. “Chemical Dictionary 4”)
It was conducted on the basis of the 30th edition of the reduced edition of February 15, 1987).
【0035】また、本発明のエポキシ樹脂成形材料に
は、ICの耐湿性、高温放置特性を向上させる目的で陰
イオン交換体を必要に応じて配合することができる。陰
イオン交換体としては特に制限はなく、従来公知のもの
を用いることができるが、例えば、ハイドロタルサイト
類や、マグネシウム、アルミニウム、チタン、ジルコニ
ウム、ビスマスから選ばれる元素の含水酸化物等が挙げ
られ、これらを単独用いても2種類以上を組み合わせて
用いてもよい。なかでも、次式(XX)で示されるハイド
ロタルサイトが好ましい。If desired, an anion exchanger may be added to the epoxy resin molding material of the present invention for the purpose of improving the moisture resistance of the IC and the high temperature storage property. The anion exchanger is not particularly limited, and conventionally known ones can be used, and examples thereof include hydrotalcites and hydrous oxides of elements selected from magnesium, aluminum, titanium, zirconium, and bismuth. These may be used alone or in combination of two or more. Of these, hydrotalcite represented by the following formula (XX) is preferable.
【化30】
Mg1-XAlX(OH)2(CO3)X/2・mH2O ……(XX)
(0<X≦0.5、mは正の整数)
これらの陰イオン交換体の配合量は、ハロゲンイオンな
どの陰イオンを捕捉できる十分量であれば特に制限はな
いが、(A)エポキシ樹脂に対して0.1〜30重量%
の範囲が好ましく、1〜5重量%がより好ましい。Embedded image Mg 1-X Al X (OH) 2 (CO 3 ) X / 2 · mH 2 O (XX) (0 <X ≦ 0.5, m is a positive integer) These anion exchanges The compounding amount of the body is not particularly limited as long as it is an amount sufficient to capture anions such as halogen ions, but is 0.1 to 30% by weight relative to (A) epoxy resin.
Is preferable, and 1 to 5% by weight is more preferable.
【0036】本発明のエポキシ樹脂成形材料には、必要
に応じて接着促進剤を配合することができる。特に、銅
フレームとエポキシ樹脂成形材料との接着性を向上させ
るために接着促進剤の配合は有効である。接着促進剤と
しては特に制限はなく、従来公知のものを用いることが
できるが、例えば、イミダゾール、トリアゾール、テト
ラゾール、トリアジン等及びこれらの誘導体、アントラ
ニル酸、没食子酸、マロン酸、リンゴ酸、マレイン酸、
アミノフェノール、キノリン等及びこれらの誘導体、脂
肪族酸アミド化合物、ジチオカルバミン酸塩、チアジア
ゾール誘導体などが挙げられ、これらを単独で用いても
2種類以上を組み合わせて用いてもよい。The epoxy resin molding material of the present invention may optionally contain an adhesion promoter. In particular, the addition of an adhesion promoter is effective for improving the adhesion between the copper frame and the epoxy resin molding material. The adhesion promoter is not particularly limited and may be a conventionally known one, for example, imidazole, triazole, tetrazole, triazine and derivatives thereof, anthranilic acid, gallic acid, malonic acid, malic acid, maleic acid. ,
Examples thereof include aminophenol, quinoline and the like and derivatives thereof, aliphatic acid amide compounds, dithiocarbamate, thiadiazole derivatives and the like, and these may be used alone or in combination of two or more kinds.
【0037】本発明のエポキシ樹脂成形材料には、必要
に応じて離型剤を用いてもよい。離型剤としては、酸化
型又は非酸化型のポリオレフィンを(A)エポキシ樹脂
100重量部に対して0.01〜10重量部用いること
が好ましく、0.1〜5重量部用いることがより好まし
い。0.01重量部未満では離型性が不十分となる傾向
があり、10重量部を超えると接着性が低下する傾向が
ある。酸化型又は非酸化型のポリオレフィンとしては、
ヘキスト株式会社製H4やPE、PEDシリーズ等の数
平均分子量が500〜10000程度の低分子量ポリエ
チレンなどが挙げられる。また、これ以外の離型剤とし
ては、たとえばカルナバワックス、モンタン酸エステ
ル、モンタン酸、ステアリン酸等が挙げられ、これらの
1種を単独で用いても2種以上組合わせて用いてもよ
い。酸化型又は非酸化型のポリオレフィンに加えてこれ
ら他の離型剤を併用する場合、その配合量は(A)エポ
キシ樹脂100重量部に対して0.l〜10重量部が好
ましく、0.5〜3重量部がより好ましい。また、その
他の添加剤として、シリコーンオイル、シリコーンゴム
粉末等の応力緩和剤、カーボンブラック、有機染料、有
機顔料、酸化チタン、鉛丹、ベンガラ等の着色剤など
を、必要に応じて本発明のエポキシ樹脂成形材料に配合
することができる。A release agent may be used in the epoxy resin molding material of the present invention, if necessary. As the release agent, it is preferable to use 0.01 to 10 parts by weight, and more preferably 0.1 to 5 parts by weight of an oxidized or non-oxidized polyolefin with respect to 100 parts by weight of the (A) epoxy resin. . If it is less than 0.01 part by weight, the releasability tends to be insufficient, and if it exceeds 10 parts by weight, the adhesiveness tends to be lowered. As the oxidized or non-oxidized polyolefin,
Examples include low molecular weight polyethylene having a number average molecular weight of about 500 to 10,000 such as H4, PE and PED series manufactured by Hoechst Co., Ltd. Examples of other release agents include carnauba wax, montanic acid ester, montanic acid, stearic acid and the like, and one of these may be used alone or two or more of them may be used in combination. When these other mold release agents are used in combination with the oxidized or non-oxidized polyolefin, the compounding amount thereof is 0.1 part with respect to 100 parts by weight of the epoxy resin (A). 1 to 10 parts by weight is preferable, and 0.5 to 3 parts by weight is more preferable. In addition, as other additives, a stress relaxation agent such as silicone oil and silicone rubber powder, a carbon black, an organic dye, an organic pigment, a coloring agent such as titanium oxide, red lead, red iron oxide, and the like may be added according to the invention. It can be compounded with an epoxy resin molding material.
【0038】本発明のエポキシ樹脂成形材料は、各種成
分を均一に分散混合できるのであれば、いかなる手法を
用いても調製できるが、一般的な手法として、所定の配
合量の成分をミキサー等によって十分混合した後、ミキ
シングロール、押出機等によって溶融混練した後、冷
却、粉砕する方法を挙げることができる。例えば、上述
した成分の所定量を均一に撹拌、混合し、予め70〜1
40℃に加熱してあるニーダー、ロール、エクストルー
ダーなどで混練、冷却し、粉砕するなどの方法で得るこ
とができる。成形条件に合うような寸法及び重量でタブ
レット化すると使いやすい。The epoxy resin molding material of the present invention can be prepared by any method as long as it can uniformly disperse and mix various components. As a general method, a predetermined amount of components is mixed with a mixer or the like. Examples include a method of sufficiently mixing, melt-kneading with a mixing roll, an extruder or the like, and then cooling and pulverizing. For example, a predetermined amount of the above-mentioned components are uniformly stirred and mixed, and 70 to 1 in advance.
It can be obtained by a method such as kneading with a kneader, roll, extruder or the like heated to 40 ° C., cooling and pulverizing. It is easy to use if it is made into a tablet with dimensions and weight that match the molding conditions.
【0039】本発明で得られるエポキシ樹脂成形材料に
より封止した素子を備えた電子部品装置としては、リー
ドフレーム、配線済みのテープキャリア、配線板、ガラ
ス、シリコンウエハ等の支持部材に、半導体チップ、ト
ランジスタ、ダイオード、サイリスタ等の能動素子、コ
ンデンサ、抵抗体、コイル等の受動素子等の素子を搭載
し、必要な部分を本発明のエポキシ樹脂成形材料で封止
した、電子部品装置などが挙げられる。このような電子
部品装置としては、たとえば、リードフレーム上に半導
体素子を固定し、ボンディングパッド等の素子の端子部
とリード部をワイヤボンディングやバンプで接続した
後、本発明のエポキシ樹脂成形材料を用いてトランスフ
ァ成形等により封止してなる、DIP(Dual Inline Pa
ckage)、PLCC(Plastic Leaded Chip Carrier)、
QFP(Quad Flat Package)、SOP(Small Outline
Package)、SOJ(Small Outline J-lead packag
e)、TSOP(Thin Small Outline Package)、TQ
FP(Thin Quad Flat Package)等の一般的な樹脂封止
型IC、テープキャリアにバンプで接続した半導体チッ
プを、本発明のエポキシ樹脂成形材料で封止したTCP
(Tape Carrier Package)、配線板やガラス上に形成し
た配線に、ワイヤボンディング、フリップチップボンデ
ィング、はんだ等で接続した半導体チップ、トランジス
タ、ダイオード、サイリスタ等の能動素子及び/又はコ
ンデンサ、抵抗体、コイル等の受動素子を、本発明のエ
ポキシ樹脂成形材料で封止したCOB(Chip On Boar
d)モジュール、ハイブリッドIC、マルチチップモジ
ュール、裏面に配線板接続用の端子を形成した有機基板
の表面に素子を搭載し、バンプまたはワイヤボンディン
グにより素子と有機基板に形成された配線を接続した
後、本発明のエポキシ樹脂成形材料で素子を封止したB
GA(Ball Grid Array)、CSP(Chip Size Packag
e)などが挙げられる。また、プリント回路板にも本発
明のエポキシ樹脂成形材料は有効に使用できる。As an electronic component device provided with an element sealed with the epoxy resin molding material obtained in the present invention, a semiconductor chip is used as a supporting member such as a lead frame, a wired tape carrier, a wiring board, glass and a silicon wafer. , Electronic devices such as transistors, diodes, active elements such as thyristors, capacitors, resistors, passive elements such as coils are mounted, and necessary parts are sealed with the epoxy resin molding material of the present invention. To be As such an electronic component device, for example, a semiconductor element is fixed on a lead frame, the terminal portion of the element such as a bonding pad and the lead portion are connected by wire bonding or bumps, and then the epoxy resin molding material of the present invention is used. DIP (Dual Inline Pa
ckage), PLCC (Plastic Leaded Chip Carrier),
QFP (Quad Flat Package), SOP (Small Outline)
Package), SOJ (Small Outline J-lead packag
e), TSOP (Thin Small Outline Package), TQ
General resin encapsulation type IC such as FP (Thin Quad Flat Package), TCP in which a semiconductor chip connected to a tape carrier with bumps is encapsulated with the epoxy resin molding material of the present invention.
(Tape Carrier Package), active elements such as semiconductor chips, transistors, diodes, thyristors, etc. that are connected to wiring formed on a wiring board or glass by wire bonding, flip chip bonding, solder, etc. and / or capacitors, resistors, coils COB (Chip On Boar) in which passive elements such as
d) Modules, hybrid ICs, multi-chip modules, after mounting an element on the surface of an organic substrate having terminals for connecting a wiring board on the back side, and connecting the element and the wiring formed on the organic substrate by bumps or wire bonding , B in which an element is sealed with the epoxy resin molding material of the present invention
GA (Ball Grid Array), CSP (Chip Size Packag
e) and the like. Also, the epoxy resin molding material of the present invention can be effectively used for a printed circuit board.
【0040】本発明のエポキシ樹脂成形材料を用いて素
子を封止する方法としては、低圧トランスファ成形法が
最も一般的であるが、インジェクション成形法、圧縮成
形法等を用いてもよい。As the method for sealing the element using the epoxy resin molding material of the present invention, the low pressure transfer molding method is the most general method, but the injection molding method, the compression molding method or the like may be used.
【0041】[0041]
【実施例】次に実施例により本発明を説明するが、本発
明の範囲はこれらの実施例に限定されるものではない。
(実施例1〜10、比較例1〜4)エポキシ樹脂とし
て、
エポキシ樹脂1:オルトクレゾールノボラック型エポキ
シ樹脂(エポキシ当量195、軟化点62℃、住友化学
工業株式会社製商品名ESCN−190)、
エポキシ樹脂2:ジシクロペンタジエン変性フェノール
ノボラック型エポキシ樹脂(エポキシ当量264、軟化
点64℃、大日本インキ化学工業株式会社製商品名HP
−7200)、
エポキシ樹脂3:ビスフェノールA型エポキシ樹脂(エ
ポキシ当量468、軟化点64℃、ジャパンエポキシレ
ジン株式会社製商品名E-1001)、
エポキシ樹脂4:ビフェニル骨格型エポキシ樹脂(エポ
キシ当量187、融点106℃、ジャパンエポキシレジ
ン株式会社製商品名YX−4000)、
エポキシ樹脂5:硫黄原子含有エポキシ樹脂(エポキシ
当量242、融点119℃、新日鐵化学株式会社製商品
名YSLV−120TE)を用意した。The present invention will now be described with reference to examples, but the scope of the present invention is not limited to these examples. (Examples 1 to 10 and Comparative Examples 1 to 4) As an epoxy resin, epoxy resin 1: orthocresol novolac type epoxy resin (epoxy equivalent 195, softening point 62 ° C, trade name ESCN-190 manufactured by Sumitomo Chemical Co., Ltd.), Epoxy resin 2: dicyclopentadiene-modified phenol novolac type epoxy resin (epoxy equivalent 264, softening point 64 ° C, trade name HP manufactured by Dainippon Ink and Chemicals, Inc.
-7200), epoxy resin 3: bisphenol A type epoxy resin (epoxy equivalent 468, softening point 64 ° C, trade name E-1001 manufactured by Japan Epoxy Resin Co., Ltd.), epoxy resin 4: biphenyl skeleton type epoxy resin (epoxy equivalent 187, Melting point 106 ° C., Japan Epoxy Resin Co., Ltd. product name YX-4000), Epoxy resin 5: Sulfur atom-containing epoxy resin (epoxy equivalent 242, melting point 119 ° C., Nippon Steel Chemical Co., Ltd. product name YSLV-120TE) is prepared. did.
【0042】硬化剤としては
硬化剤1:下記一般式(XIV)で表され式中のn=1以
上の成分量が10重量%であるフェノールノボラック樹
脂(水酸基当量100、融点120℃、本州化学工業株
式会社製商品名ビスフェノールF)、
硬化剤2:1分子内にフェノール性水酸基を平均で2.
2個含有するジシクロペンタジエン型フェノール樹脂
(水酸基当量166、軟化点93℃、日本石油化学株式
会社製商品名DPP−L)、
硬化剤3:下記一般式(XIV)で表され式中のn=1以
上の成分量が82重量%、nの平均値が4.0であるフ
ェノールノボラック樹脂(水酸基当量106、軟化点8
0℃、荒川化学工業株式会社製商品名タマノル75
8)、
硬化剤4:1分子内にフェノール性水酸基を平均で3.
5個含有するフェノールアラルキル樹脂(水酸基当量1
76、軟化点70℃、三井化学株式会社製商品名ミレッ
クスXLC)を用意した。The curing agent is a curing agent 1: a phenol novolac resin represented by the following general formula (XIV), in which the amount of the component of n = 1 or more in the formula is 10% by weight (hydroxyl group equivalent 100, melting point 120 ° C., Honshu Kagaku) (Trade name: bisphenol F) manufactured by Kogyo Co., Ltd., curing agent 2: 1 with an average of phenolic hydroxyl groups in the molecule of 2.
Two dicyclopentadiene type phenolic resins (hydroxyl equivalent 166, softening point 93 ° C, trade name DPP-L manufactured by Nippon Petrochemical Co., Ltd.), curing agent 3: represented by the following general formula (XIV) and n in the formula = 82% by weight of component amount of 1 or more and an average value of n is 4.0 (hydroxyl group equivalent 106, softening point 8
0 ° C, product name Tamanor 75 manufactured by Arakawa Chemical Industry Co., Ltd.
8), curing agent 4: 1 average of phenolic hydroxyl groups in the molecule 3.
Phenol aralkyl resin containing 5 (hydroxyl equivalent 1
76, softening point 70 ° C., trade name Mirex XLC manufactured by Mitsui Chemicals, Inc.) was prepared.
【0043】硬化促進剤としてはトリフェニルホスフィ
ンとp−ベンゾキノンとの付加反応物(硬化促進剤
1)、カップリング剤としては、γ−グリシドキシプロ
ピルトリメトキシシラン(カップリング剤:日本ユニカ
ー株式会社製商品名A−187)、無機充填剤として平
均粒径25.0μm、比表面積3.3m2/gの球状溶
融シリカ、難燃剤としてビスフェノールA型ブロム化エ
ポキシ樹脂(エポキシ樹脂6:住友化学工業株式会社製
商品名ESB−400T、エポキシ当量375、軟化点
80℃、臭素含量48重量%)、三酸化アンチモン、そ
の他の添加剤としてカルナバワックス(株式会社セラリ
カNODA製)、カーボンブラック(三菱化学株式会社
製商品名MA−100)を用意した。これらをそれぞれ
表1〜表2に示す重量部で配合し、混練温度80℃、混
練時間10分の条件でロール混練を行い、実施例1〜1
0及び比較例1〜4のエポキシ樹脂成形材料を作製し
た。なお、表1、2中「多官能成分」は、分子内にフェ
ノール性水酸基を平均で3個以上含有する多官能フェノ
ール樹脂の、(B)硬化剤全量中の重量%を示す。The curing accelerator is an addition reaction product of triphenylphosphine and p-benzoquinone (curing accelerator 1), and the coupling agent is γ-glycidoxypropyltrimethoxysilane (coupling agent: Nippon Unicar Co., Ltd. Brand name A-187 manufactured by the company, spherical fused silica having an average particle size of 25.0 μm and a specific surface area of 3.3 m 2 / g as an inorganic filler, and a bisphenol A type brominated epoxy resin (epoxy resin 6: Sumitomo Chemical Co., Ltd.) as a flame retardant. Kogyo Co., Ltd., trade name ESB-400T, epoxy equivalent 375, softening point 80 ° C., bromine content 48% by weight), antimony trioxide, carnauba wax as an additive (Cerarica NODA Co., Ltd.), carbon black (Mitsubishi Chemical) Product name MA-100 manufactured by Co., Ltd. was prepared. These are blended in parts by weight shown in Tables 1 and 2, respectively, and roll kneading is carried out under the conditions of a kneading temperature of 80 ° C. and a kneading time of 10 minutes.
0 and the epoxy resin molding materials of Comparative Examples 1 to 4 were produced. In Tables 1 and 2, the "polyfunctional component" indicates the weight% of the polyfunctional phenolic resin containing 3 or more phenolic hydroxyl groups in the molecule on average in the total amount of the (B) curing agent.
【化31】 [Chemical 31]
【0044】[0044]
【表1】 [Table 1]
【0045】[0045]
【表2】 [Table 2]
【0046】作製した実施例、比較例のエポキシ樹脂成
形材料を、次の各試験により評価した。なお、エポキシ
樹脂成形材料の成形は、トランスファ成形機により、金
型温度180℃、成形圧力6.9MPa、硬化時間90
秒の条件で行った。また、後硬化は180℃で5時間行
った。評価結果を表2に示す。
(1)スパイラルフロー(流動性の指標)
EMMI−1−66に準じたスパイラルフロー測定用金
型を用いて、エポキシ樹脂成形材料を上記条件で成形
し、流動距離(cm)を求めた。
(2)円板フロー(流動性の指標)
200mm(W)×200mm(D)×25mm(H)
の上型と200mm(W)×200mm(D)×15m
m(H)の下型を有する円板フロー測定用平板金型を用
いて、秤量した試料(エポキシ樹脂成形材料)5gを1
80℃に加熱した下型の中心部にのせ、5秒後に、18
0℃に加熱した上型を閉じて、荷重78N、硬化時間9
0秒の条件で圧縮成形し、ノギスで成形品の長径(m
m)及び短径(mm)を測定して、その平均値(mm)
を円板フローとした。
(3)熱時硬度
エポキシ樹脂成形材料を上記成形条件で直径50mm×
厚さ3mmの円板に成形し、成形後直ちにショアD型硬
度計を用いて測定した。
(4)吸水率
上記(3)で成形した円板を上記条件で後硬化し、85
℃/85%RHの条件下で168時間放置し、放置前後
の重量変化を測定して吸水率を評価した。
(5)チップシフト量
LOC(Lead On Chip)構造の42アロイリードフレー
ム上に8.6mm×15.0mm×0.28mm厚のシ
リコーンチップを搭載した、リードフレーム上面からパ
ッケージ上面までの厚みが0.22mm、チップ下面か
らパッケージ下面までの厚みが0.28mmのTSOP
(Thin Small Outline Package)を、上記条件で成形し
て作製し、その破断面観察からチップシフト量を求め
た。チップシフトについてはシフト量20μm未満を良
好、20μm以上を不良とした。
(6)ボイド発生量
上記(5)と同じTSOPを用いて、ソフトX線測定装
置(ソフテック社製PRO−TEST100型)によ
り、電圧100kV、電流1.5mAの条件で透視観察
を行い、直径0.1mm以上のボイドの発生の有無を観
察し、ボイド発生パッケージ数/全パッケージ数で評価
した。
(7)ワイヤースウィープ量
銅リードフレーム上に5.8×5.8×0.3mm厚の
シリコーンチップを搭載した外形寸法24×24×1.
4mm厚の216pQFPパッケージ(金線:27μm
径、4.1mm長、80μmパッドピッチ)をエポキシ
樹脂成形材料を用いて上記条件で成形して作製した。得
られたパッケージをソフトX線測定装置(ソフテック社
製PRO−TEST100型)により、電圧100k
V、電流1.5mAの条件で透視観察を行い、ワイヤー
スウィープ量(流れ量)/(金線長)(単位%)を測定
してパッケージ数10個の平均値で評価した。
(8)耐リフロークラック性
42アロイリードフレーム上に8×10×0.4mm厚
のシリコーンチップを搭載した外形寸法20×14×
2.0mm厚の80pQFPパッケージをエポキシ樹脂
成形材料を用いて上記条件で成形し、得られたパッケー
ジを85℃/85%RHで所定時間吸湿処理を行った
後、IRリフロー装置により245℃/15秒の条件で
リフロー処理を行ってクラックの有無を確認し、クラッ
ク発生パッケージ数/全パッケージ数で評価した。The prepared epoxy resin molding materials of Examples and Comparative Examples were evaluated by the following tests. The epoxy resin molding material is molded by a transfer molding machine at a mold temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90.
It went under the condition of second. Further, post-curing was performed at 180 ° C. for 5 hours. The evaluation results are shown in Table 2. (1) Spiral flow (index of fluidity) Using a mold for spiral flow measurement according to EMMI-1-66, an epoxy resin molding material was molded under the above conditions, and a flow distance (cm) was obtained. (2) Disc flow (index of fluidity) 200 mm (W) x 200 mm (D) x 25 mm (H)
Upper mold and 200mm (W) × 200mm (D) × 15m
1 g of 5 g of a sample (epoxy resin molding material) weighed using a flat plate mold for disc flow measurement having a lower mold of m (H)
Place on the center of the lower mold heated to 80 ° C, and after 5 seconds,
Close the upper mold heated to 0 ℃, load 78N, curing time 9
Compression molding is performed under the condition of 0 seconds, and the long diameter of the molded product (m
m) and minor axis (mm) are measured, and the average value (mm)
Is the disc flow. (3) Hardness at heat Epoxy resin molding material 50 mm in diameter under the above molding conditions
It was molded into a disk having a thickness of 3 mm and measured immediately after molding using a Shore D type hardness meter. (4) Water absorption rate The disc molded in (3) above was post-cured under the above conditions to obtain 85
The sample was left standing for 168 hours under the condition of ° C / 85% RH, and the weight change before and after standing was measured to evaluate the water absorption. (5) Chip shift amount A 42-alloy lead frame with a LOC (Lead On Chip) structure is mounted with a silicone chip of 8.6 mm × 15.0 mm × 0.28 mm, and the thickness from the upper surface of the lead frame to the upper surface of the package is 0. 0.22 mm, TSOP with a thickness of 0.28 mm from the bottom surface of the chip to the bottom surface of the package
(Thin Small Outline Package) was formed by molding under the above conditions, and the chip shift amount was determined from the fracture surface observation. Regarding chip shift, a shift amount of less than 20 μm was considered good, and a shift amount of 20 μm or more was considered defective. (6) Void generation amount Using the same TSOP as in the above (5), a soft X-ray measuring device (PRO-TEST100 type manufactured by Softec Co., Ltd.) was used for fluoroscopic observation under conditions of a voltage of 100 kV and a current of 1.5 mA, and a diameter of 0. The presence / absence of voids of 1 mm or more was observed, and evaluation was made by the number of voided packages / total number of packages. (7) Wire sweep amount External dimensions 24 × 24 × 1. With a 5.8 × 5.8 × 0.3 mm thick silicone chip mounted on a copper lead frame.
4mm thick 216p QFP package (gold wire: 27μm
A diameter of 4.1 mm and a pad pitch of 80 μm) were molded by using an epoxy resin molding material under the above conditions. The voltage of the obtained package was 100 k using a soft X-ray measuring device (PRO-TEST100 type manufactured by Softec).
Fluorescence observation was performed under the conditions of V and current of 1.5 mA, and the wire sweep amount (flow amount) / (gold wire length) (unit%) was measured and evaluated by the average value of 10 packages. (8) Reflow crack resistance 42 alloy External dimensions 20 × 14 × mounted with a 8 × 10 × 0.4 mm thick silicone chip on an alloy lead frame
A 2.0 mm thick 80 pQFP package was molded under the above conditions using an epoxy resin molding material, and the obtained package was subjected to a moisture absorption treatment at 85 ° C./85% RH for a predetermined time, and then at 245 ° C./15 by an IR reflow device. The presence or absence of cracks was confirmed by performing reflow treatment under the condition of seconds, and evaluation was made by the number of cracked packages / total number of packages.
【0047】[0047]
【表3】 [Table 3]
【0048】[0048]
【表4】 [Table 4]
【0049】表3及び4に見られるように、本発明に規
定している(B)硬化剤を用いている実施例1〜10
は、スパイラルフロー及び円板フロー等の流動性に優
れ、チップシフトがいずれも良好であり、ボイドの発生
もなく、ワイヤースウィープも小さく、耐リフロー性に
も優れる。特に(B)硬化剤成分として硬化剤2を併用
している実施例2及び4〜10は耐リフロークラック性
に優れている。これに対して、本発明に規定している
(B)硬化剤を含まない比較例1〜4では、実施例と比
較して、チップシフト、ボイド発生量、ワイヤースウィ
ープ、耐リフロー性のいずれかに劣っている。As can be seen in Tables 3 and 4, Examples 1-10 using the (B) curing agent specified in the present invention.
Has excellent fluidity such as spiral flow and disc flow, good chip shift, no voids, small wire sweep, and excellent reflow resistance. In particular, Examples 2 and 4 to 10 in which the curing agent 2 is used as the curing agent component (B) are excellent in reflow crack resistance. On the other hand, in Comparative Examples 1 to 4 not containing the (B) curing agent defined in the present invention, any one of chip shift, void generation amount, wire sweep, and reflow resistance is compared with the examples. Inferior to
【0050】[0050]
【発明の効果】本発明のエポキシ樹脂成形材料を用いて
IC、LSI等の電子部品を封止すれば、TSOPのよ
うな薄型の表面実装型パッケージにおいてもチップシフ
トやボイドの発生が少なく、優れたワイヤースウィープ
性及び耐リフロー性を示し、信頼性の高い電子部品装置
を得ることができるので、その工業的価値は大である。By using the epoxy resin molding material of the present invention to seal electronic parts such as ICs and LSIs, chip shifts and voids are less likely to occur even in thin surface mounting type packages such as TSOP. In addition, the wire sweep property and the reflow resistance can be obtained, and a highly reliable electronic component device can be obtained, so that its industrial value is great.
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成14年6月24日(2002.6.2
4)[Submission date] June 24, 2002 (2002.6.2)
4)
【手続補正2】[Procedure Amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】0030[Name of item to be corrected] 0030
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【0030】本発明において用いられる(D)無機充填
剤は、吸湿性、線膨張係数低減、熱伝導性向上及び強度
向上のためにエポキシ樹脂成形材料に配合されるもので
あり、例えば、溶融シリカ、結晶シリカ、アルミナ、ジ
ルコン、珪酸カルシウム、炭酸カルシウム、チタン酸カ
リウム、炭化珪素、窒化珪素、窒化アルミ、窒化ホウ
素、ベリリア、ジルコニア、ジルコン、フォステライ
ト、ステアタイト、スピネル、ムライト、チタニア等の
粉体、又はこれらを球形化したビーズ、ガラス繊維など
が挙げられ、これらの1種を単独で用いても2種以上を
組合わせて用いてもよい。さらに、難燃効果のある無機
充填剤としては水酸化アルミニウム、水酸化マグネシウ
ム、硼酸亜鉛、モリブデン酸亜鉛、マグネシウムと亜鉛
の複合水酸化物等の複合金属水酸化物などが挙げられ、
これらの1種を単独で用いても2種以上を組合わせて用
いてもよい。なかでも、線膨張係数低減の観点からは溶
融シリカが、高熱伝導性の観点からはアルミナが好まし
い。充填剤の形状は、成形時の流動性又は金型摩耗性の
点からは球形又は球状に近い形が好ましい。(D)無機
充填剤の配合量は、成形性、吸湿性、線膨張係数の低減
及び強度向上の観点から、エポキシ樹脂成形材料に対し
て70重量%以上が好ましく、80重量%より多く95
重量%以下がより好ましい。70重量%未満では耐リフ
ロー性が低下する傾向があり、95重量%を超えると流
動性が不足する傾向がある。The inorganic filler (D) used in the present invention is added to the epoxy resin molding material for the purposes of hygroscopicity, reduction of linear expansion coefficient, improvement of thermal conductivity and improvement of strength, for example, fused silica. Powder of crystalline silica, alumina, zircon, calcium silicate, calcium carbonate, potassium titanate, silicon carbide, silicon nitride, aluminum nitride, boron nitride, beryllia, zirconia, zircon, fosterite, steatite, spinel, mullite, titania, etc. Examples thereof include a body, beads made of spherical particles, glass fiber, and the like, and one of these may be used alone, or two or more thereof may be used in combination. Furthermore, examples of the inorganic filler having a flame retardant effect include aluminum hydroxide, magnesium hydroxide, zinc borate, zinc molybdate, complex metal hydroxides such as complex hydroxide of magnesium and zinc, and the like.
These 1 type may be used individually or may be used in combination of 2 or more type. Of these, fused silica is preferable from the viewpoint of reducing the linear expansion coefficient, and alumina is preferable from the viewpoint of high thermal conductivity. The shape of the filler is preferably a sphere or a shape close to a sphere from the viewpoint of fluidity at the time of molding or abrasion of the mold. The blending amount of the inorganic filler (D) is preferably 70% by weight or more, and more than 80% by weight, based on the epoxy resin molding material, from the viewpoints of moldability, hygroscopicity, reduction of linear expansion coefficient and improvement of strength.
It is more preferably less than or equal to wt%. Riff resistance below 70% by weight
When it exceeds 95% by weight, the fluidity tends to be insufficient.
【手続補正3】[Procedure 3]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】0041[Correction target item name] 0041
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【0041】[0041]
【実施例】次に実施例により本発明を説明するが、本発
明の範囲はこれらの実施例に限定されるものではない。
(実施例1〜10、比較例1〜4)エポキシ樹脂とし
て、
エポキシ樹脂1:オルトクレゾールノボラック型エポキ
シ樹脂(エポキシ当量195、軟化点62℃、住友化学
工業株式会社製商品名ESCN−190)、
エポキシ樹脂2:ジシクロペンタジエン型エポキシ樹脂
(エポキシ当量264、軟化点64℃、大日本インキ化
学工業株式会社製商品名HP−7200)、
エポキシ樹脂3:ビスフェノールA型エポキシ樹脂(エ
ポキシ当量468、軟化点64℃、ジャパンエポキシレ
ジン株式会社製商品名E-1001)、
エポキシ樹脂4:ビフェニル骨格型エポキシ樹脂(エポ
キシ当量187、融点106℃、ジャパンエポキシレジ
ン株式会社製商品名YX−4000)、
エポキシ樹脂5:硫黄原子含有エポキシ樹脂(エポキシ
当量242、融点119℃、新日鐵化学株式会社製商品
名YSLV−120TE)を用意した。The present invention will now be described with reference to examples, but the scope of the present invention is not limited to these examples. (Examples 1 to 10 and Comparative Examples 1 to 4) As an epoxy resin, epoxy resin 1: orthocresol novolac type epoxy resin (epoxy equivalent 195, softening point 62 ° C, trade name ESCN-190 manufactured by Sumitomo Chemical Co., Ltd.), epoxy resin 2: dicyclopenta diene-type epoxy resin (epoxy equivalent 264, softening point 64 ° C., Dainippon Ink and Chemicals, Inc., trade name HP-7200), the epoxy resin 3: bisphenol A type epoxy resin (epoxy equivalent 468, softening point 64 ° C., product name E-1001 manufactured by Japan Epoxy Resin Co., Ltd., epoxy resin 4: biphenyl skeleton type epoxy resin (epoxy equivalent 187, melting point 106 ° C., product name YX-4000 manufactured by Japan Epoxy Resin Co., Ltd.), epoxy resin 5 : Sulfur atom-containing epoxy resin (epoxy equivalent 242 Melting point 119 ℃, manufactured by Nippon Steel Chemical Co., Ltd. trade name YSLV-120TE) was prepared.
【手続補正4】[Procedure amendment 4]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】0046[Correction target item name] 0046
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【0046】作製した実施例、比較例のエポキシ樹脂成
形材料を、次の各試験により評価した。なお、エポキシ
樹脂成形材料の成形は、トランスファ成形機により、金
型温度180℃、成形圧力6.9MPa、硬化時間90
秒の条件で行った。また、後硬化は180℃で5時間行
った。評価結果を表2に示す。
(1)スパイラルフロー(流動性の指標)
EMMI−1−66に準じたスパイラルフロー測定用金
型を用いて、エポキシ樹脂成形材料を上記条件で成形
し、流動距離(cm)を求めた。
(2)円板フロー(流動性の指標)
200mm(W)×200mm(D)×25mm(H)
の上型と200mm(W)×200mm(D)×15m
m(H)の下型を有する円板フロー測定用平板金型を用
いて、秤量した試料(エポキシ樹脂成形材料)5gを1
80℃に加熱した下型の中心部にのせ、5秒後に、18
0℃に加熱した上型を閉じて、荷重78N、硬化時間9
0秒の条件で圧縮成形し、ノギスで成形品の長径(m
m)及び短径(mm)を測定して、その平均値(mm)
を円板フローとした。
(3)熱時硬度
エポキシ樹脂成形材料を上記成形条件で直径50mm×
厚さ3mmの円板に成形し、成形後直ちにショアD型硬
度計を用いて測定した。
(4)吸水率
上記(3)で成形した円板を上記条件で後硬化し、85
℃/85%RHの条件下で168時間放置し、放置前後
の重量変化を測定して吸水率を評価した。
(5)チップシフト量
LOC(Lead On Chip)構造の42アロイリードフレー
ム上に8.6mm×15.0mm×0.28mm厚のシ
リコーンチップを搭載した、リードフレーム上面からパ
ッケージ上面までの厚みが0.22mm、チップ下面か
らパッケージ下面までの厚みが0.28mmのTSOP
(Thin Small Outline Package)を、上記条件で成形し
て作製し、その破断面観察からチップシフト量を求め
た。チップシフトについてはシフト量20μm未満を良
好、20μm以上を不良とした。
(6)ボイド発生量
上記(5)と同じTSOPを用いて、ソフトX線測定装
置(ソフテック社製PRO−TEST100型)によ
り、電圧100kV、電流1.5mAの条件で透視観察
を行い、直径0.1mm以上のボイドの発生の有無を観
察し、ボイド発生パッケージ数/全パッケージ数で評価
した。
(7)ワイヤースウィープ量
銅リードフレーム上に5.8×5.8×0.3mm厚の
シリコーンチップを搭載した外形寸法24×24×1.
4mm厚の216pQFPパッケージ(金線:27μm
径、4.1mm長、80μmパッドピッチ)をエポキシ
樹脂成形材料を用いて上記条件で成形して作製した。得
られたパッケージをソフトX線測定装置(ソフテック社
製PRO−TEST100型)により、電圧100k
V、電流1.5mAの条件で透視観察を行い、ワイヤー
スウィープ量(流れ量)/(金線長)(単位%)を測定
してパッケージ数10個の平均値で評価した。
(8)耐リフロー性
42アロイリードフレーム上に8×10×0.4mm厚
のシリコーンチップを搭載した外形寸法20×14×
2.0mm厚の80pQFPパッケージをエポキシ樹脂
成形材料を用いて上記条件で成形し、得られたパッケー
ジを85℃/85%RHで所定時間吸湿処理を行った
後、IRリフロー装置により245℃/15秒の条件で
リフロー処理を行ってクラックの有無を確認し、クラッ
ク発生パッケージ数/全パッケージ数で評価した。The prepared epoxy resin molding materials of Examples and Comparative Examples were evaluated by the following tests. The epoxy resin molding material is molded by a transfer molding machine at a mold temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90.
It went under the condition of second. Further, post-curing was performed at 180 ° C. for 5 hours. The evaluation results are shown in Table 2. (1) Spiral flow (index of fluidity) Using a mold for spiral flow measurement according to EMMI-1-66, an epoxy resin molding material was molded under the above conditions, and a flow distance (cm) was obtained. (2) Disc flow (index of fluidity) 200 mm (W) x 200 mm (D) x 25 mm (H)
Upper mold and 200mm (W) × 200mm (D) × 15m
1 g of 5 g of a sample (epoxy resin molding material) weighed using a flat plate mold for disc flow measurement having a lower mold of m (H)
Place on the center of the lower mold heated to 80 ° C, and after 5 seconds,
Close the upper mold heated to 0 ℃, load 78N, curing time 9
Compression molding is performed under the condition of 0 seconds, and the long diameter of the molded product (m
m) and minor axis (mm) are measured, and the average value (mm)
Is the disc flow. (3) Hardness at heat Epoxy resin molding material 50 mm in diameter under the above molding conditions
It was molded into a disk having a thickness of 3 mm and measured immediately after molding using a Shore D type hardness meter. (4) Water absorption rate The disc molded in (3) above was post-cured under the above conditions to obtain 85
The sample was left standing for 168 hours under the condition of ° C / 85% RH, and the weight change before and after standing was measured to evaluate the water absorption. (5) Chip shift amount A 42-alloy lead frame with a LOC (Lead On Chip) structure is mounted with a silicone chip of 8.6 mm × 15.0 mm × 0.28 mm, and the thickness from the upper surface of the lead frame to the upper surface of the package is 0. 0.22 mm, TSOP with a thickness of 0.28 mm from the bottom surface of the chip to the bottom surface of the package
(Thin Small Outline Package) was formed by molding under the above conditions, and the chip shift amount was determined from the fracture surface observation. Regarding chip shift, a shift amount of less than 20 μm was considered good, and a shift amount of 20 μm or more was considered defective. (6) Void generation amount Using the same TSOP as in the above (5), a soft X-ray measuring device (PRO-TEST100 type manufactured by Softec Co., Ltd.) was used for fluoroscopic observation under conditions of a voltage of 100 kV and a current of 1.5 mA, and a diameter of 0. The presence / absence of voids of 1 mm or more was observed, and evaluation was made by the number of voided packages / total number of packages. (7) Wire sweep amount External dimensions 24 × 24 × 1. With a 5.8 × 5.8 × 0.3 mm thick silicone chip mounted on a copper lead frame.
4mm thick 216p QFP package (gold wire: 27μm
A diameter of 4.1 mm and a pad pitch of 80 μm) were molded by using an epoxy resin molding material under the above conditions. The voltage of the obtained package was 100 k using a soft X-ray measuring device (PRO-TEST100 type manufactured by Softec).
Fluorescence observation was performed under the conditions of V and current of 1.5 mA, and the wire sweep amount (flow amount) / (gold wire length) (unit%) was measured and evaluated by the average value of 10 packages. (8) Reflow-resistant 42 alloy Lead frame mounted with a silicon chip of 8 × 10 × 0.4 mm thickness 20 × 14 ×
A 2.0 mm thick 80 pQFP package was molded under the above conditions using an epoxy resin molding material, and the obtained package was subjected to a moisture absorption treatment at 85 ° C./85% RH for a predetermined time, and then at 245 ° C./15 by an IR reflow device. The presence or absence of cracks was confirmed by performing reflow treatment under the condition of seconds, and evaluation was made by the number of cracked packages / total number of packages.
【手続補正5】[Procedure Amendment 5]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】0049[Correction target item name] 0049
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【0049】表3及び4に見られるように、本発明に規
定している(B)硬化剤を用いている実施例1〜10
は、スパイラルフロー及び円板フロー等の流動性に優
れ、チップシフトがいずれも良好であり、ボイドの発生
もなく、ワイヤースウィープも小さく、耐リフロー性に
も優れる。特に(B)硬化剤成分として硬化剤2を併用
している実施例2及び4〜10は耐リフロー性に優れて
いる。これに対して、本発明に規定している(B)硬化
剤を含まない比較例1〜4では、実施例と比較して、チ
ップシフト、ボイド発生量、ワイヤースウィープ、耐リ
フロー性のいずれかに劣っている。As can be seen in Tables 3 and 4, Examples 1-10 using the (B) curing agent specified in the present invention.
Has excellent fluidity such as spiral flow and disc flow, good chip shift, no voids, small wire sweep, and excellent reflow resistance. In particular, Examples 2 and 4 to 10 in which the curing agent 2 is also used as the (B) curing agent component are excellent in reflow resistance. On the other hand, in Comparative Examples 1 to 4 not containing the (B) curing agent defined in the present invention, any one of chip shift, void generation amount, wire sweep, and reflow resistance is compared with the examples. Inferior to
───────────────────────────────────────────────────── フロントページの続き (72)発明者 片寄 光雄 茨城県つくば市和台48 日立化成工業株式 会社総合研究所内 Fターム(参考) 4J036 AD08 AD11 AE07 AF06 FA01 FB06 JA07 4M109 AA01 EA03 EB02 EB03 EB04 EB12 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Mitsuo Katayose 48 Wadai, Tsukuba, Ibaraki Prefecture Hitachi Chemical Co., Ltd. Company Research Institute F term (reference) 4J036 AD08 AD11 AE07 AF06 FA01 FB06 JA07 4M109 AA01 EA03 EB02 EB03 EB04 EB12
Claims (8)
(C)硬化促進剤、及び(D)無機充填剤を必須成分と
し、(B)硬化剤が、下記一般式(I)で示されてn=
1以上の成分量が11重量%以下のフェノール樹脂を含
有し、かつ、1分子内にフェノール性水酸基を平均で3
個以上含有する多官能フェノール樹脂の含有量が(B)
硬化剤全量中に10重量%未満であるエポキシ樹脂成形
材料。 【化1】 (ここで、Rは水素原子、置換又は非置換の炭素数1〜
6のアルキル基を示し、mは0又は1〜2の整数、nは
0又は1〜10の整数を示す。)1. An epoxy resin (A), a curing agent (B),
(C) a curing accelerator and (D) an inorganic filler as essential components, and (B) a curing agent is represented by the following general formula (I) and n =
Contain at least 1% by weight of a phenolic resin in an amount of 11% by weight or less, and average 3 phenolic hydroxyl groups in one molecule.
The content of the polyfunctional phenolic resin containing at least one is (B)
An epoxy resin molding material containing less than 10% by weight based on the total amount of the curing agent. [Chemical 1] (Here, R is a hydrogen atom, or a substituted or unsubstituted carbon number 1 to
6 is an alkyl group, m is 0 or an integer of 1-2, and n is 0 or an integer of 1-10. )
れるジシクロペンタジエン型フェノール樹脂を含有する
請求項1記載のエポキシ樹脂成形材料。 【化2】 (ここで、R1及びR2は水素原子及び炭素数1〜6のア
ルキル基からそれぞれ独立して選ばれ、m個全てが同一
でも異なっていてもよい。mは0又は1〜6の整数を示
し、nは0又は1〜10の整数を示す。)2. The epoxy resin molding material according to claim 1, wherein the curing agent (B) contains a dicyclopentadiene type phenol resin represented by the following general formula (II). [Chemical 2] (Here, R 1 and R 2 are independently selected from a hydrogen atom and an alkyl group having 1 to 6 carbon atoms, and all m may be the same or different. M is an integer of 0 or 1 to 6. And n represents 0 or an integer of 1 to 10.)
ジエン型フェノール樹脂のnの平均値が0以上0.5未
満である請求項2記載のエポキシ樹脂成形材料。3. The epoxy resin molding material according to claim 2, wherein the dicyclopentadiene type phenol resin represented by the general formula (II) has an average value of n of 0 or more and less than 0.5.
I)で示されるエポキシ樹脂を含有する請求項1〜3記
載のエポキシ樹脂成形材料。 【化3】 (ここで、Rは水素原子、置換又は非置換の炭素数1〜
6のアルキル基を示し、m個全てが同一でも異なってい
てもよい。mは0又は1〜2の整数を示し、nは0又は
1〜10の整数を示す。)4. The epoxy resin (A) is represented by the following general formula (II
The epoxy resin molding material according to claim 1, which comprises the epoxy resin represented by I). [Chemical 3] (Here, R is a hydrogen atom, or a substituted or unsubstituted carbon number 1 to
6 represents an alkyl group, and all m may be the same or different. m represents 0 or an integer of 1 to 2, and n represents an integer of 0 or 1 to 10. )
V)で示されるエポキシ樹脂を含有する請求項1〜4記
載のエポキシ樹脂成形材料。 【化4】 (ここで、R1及びR2は水素原子及び炭素数1〜6のア
ルキル基からそれぞれ独立して選ばれ、m個全てが同一
でも異なっていてもよい。mは0又は1〜6の整数を示
し、nは0又は1〜10の整数を示す。)5. The epoxy resin (A) has the following general formula (I
The epoxy resin molding material according to any one of claims 1 to 4, which contains an epoxy resin represented by V). [Chemical 4] (Here, R 1 and R 2 are independently selected from a hydrogen atom and an alkyl group having 1 to 6 carbon atoms, and all m may be the same or different. M is an integer of 0 or 1 to 6. And n represents 0 or an integer of 1 to 10.)
で示されるエポキシ樹脂を含有する請求項1〜5記載の
エポキシ樹脂成形材料。 【化5】 (ここで、R1は水素原子、置換又は非置換の炭素数1
〜6のアルキル基から選ばれ、全てが同一でも異なって
いてもよい。R2及びR3は水素原子、置換又は非置換の
炭素数1〜12の炭化水素基を示し、mは0又は1〜4
の整数を示し、nは0又は1〜5の整数を示す。)6. The epoxy resin (A) is represented by the following general formula (V):
The epoxy resin molding material according to any one of claims 1 to 5, containing the epoxy resin represented by the formula (1). [Chemical 5] (Here, R 1 is a hydrogen atom, a substituted or unsubstituted C 1
Selected from alkyl groups of 6 to 6, all of which may be the same or different. R 2 and R 3 represent a hydrogen atom, a substituted or unsubstituted hydrocarbon group having 1 to 12 carbon atoms, and m is 0 or 1 to 4
Is shown, and n shows the integer of 0 or 1-5. )
キシ樹脂及びビフェニル型エポキシ樹脂の少なくとも一
方を含有する請求項1〜6記載のエポキシ樹脂成形材
料。7. The epoxy resin molding material according to claim 1, wherein the epoxy resin (A) contains at least one of a sulfur atom-containing epoxy resin and a biphenyl type epoxy resin.
シ樹脂成形材料により封止された素子を備えた電子部品
装置。8. An electronic component device comprising an element sealed with the epoxy resin molding material according to claim 1.
Priority Applications (1)
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JP2002097748A JP2003292583A (en) | 2002-03-29 | 2002-03-29 | Epoxy resin molding material and electronic part device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002097748A JP2003292583A (en) | 2002-03-29 | 2002-03-29 | Epoxy resin molding material and electronic part device |
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JP2003292583A true JP2003292583A (en) | 2003-10-15 |
Family
ID=29240114
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006134865A1 (en) * | 2005-06-16 | 2006-12-21 | San-Apro Limited | Hardening accelerator for epoxy resin |
JP2008308590A (en) * | 2007-06-14 | 2008-12-25 | Nippon Kayaku Co Ltd | Epoxy resin composition for semiconductor sealing and semiconductor device |
WO2009011335A1 (en) * | 2007-07-18 | 2009-01-22 | Nipponkayaku Kabushikikaisha | Epoxy resin composition for semiconductor encapsulation and semiconductor device |
WO2011019061A1 (en) * | 2009-08-13 | 2011-02-17 | 昭和電工株式会社 | Method for producing polyglycidyl ether compound |
DE102009036987B4 (en) * | 2009-08-12 | 2017-10-05 | Ernest Stangl | Process and apparatus for converting chemical energy into thermal and electrical energy |
-
2002
- 2002-03-29 JP JP2002097748A patent/JP2003292583A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006134865A1 (en) * | 2005-06-16 | 2006-12-21 | San-Apro Limited | Hardening accelerator for epoxy resin |
JPWO2006134865A1 (en) * | 2005-06-16 | 2009-01-08 | サンアプロ株式会社 | Curing accelerator for epoxy resin |
JP2008308590A (en) * | 2007-06-14 | 2008-12-25 | Nippon Kayaku Co Ltd | Epoxy resin composition for semiconductor sealing and semiconductor device |
WO2009011335A1 (en) * | 2007-07-18 | 2009-01-22 | Nipponkayaku Kabushikikaisha | Epoxy resin composition for semiconductor encapsulation and semiconductor device |
DE102009036987B4 (en) * | 2009-08-12 | 2017-10-05 | Ernest Stangl | Process and apparatus for converting chemical energy into thermal and electrical energy |
WO2011019061A1 (en) * | 2009-08-13 | 2011-02-17 | 昭和電工株式会社 | Method for producing polyglycidyl ether compound |
JPWO2011019061A1 (en) * | 2009-08-13 | 2013-01-17 | 昭和電工株式会社 | Method for producing polyglycidyl ether compound |
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