JP2003257657A - Light emitting device, and method and apparatus for manufacturing the device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device having a high accuracy, a high hole area rate, and a high reliability. <P>SOLUTION: A high definition and a high hole area rate are realized for a full color flat panel display using red, green, and blue light emitting colors without relying upon the film forming method and film forming accuracy for organic compound layer by intentionally overlapping a part of the different organic compound layers of adjacent light emitting elements with each other to form stacked parts 21 and 22. Also a high reliability is realized by installing a stress relieving film on the electrodes of the light emitting elements before a protective film is formed. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device,
In particular, the present invention relates to a light emitting device having an organic light emitting device (OLED) formed on a substrate having an insulating surface. The present invention also relates to an organic light emitting module in which an IC including a controller is mounted on the organic light emitting panel. In this specification, the organic light emitting panel and the organic light emitting module are collectively referred to as a light emitting device. The invention further relates to an apparatus for manufacturing the light emitting device.

[0002] In this specification, a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and a light-emitting device, an electro-optical device, a semiconductor circuit, and an electronic device are all semiconductor devices.

[0003]

2. Description of the Related Art In recent years, a technique for forming a TFT (thin film transistor) on a substrate has made great progress, and its application and development to an active matrix type display device has been advanced. In particular,
Since a TFT using a polysilicon film has a higher field effect mobility (also referred to as mobility) than a conventional TFT using an amorphous silicon film, high speed operation is possible.
Therefore, a drive circuit including a TFT using a polysilicon film is provided on the same substrate as the pixel, and development for controlling each pixel is actively performed. An active matrix display device in which pixels and a driving circuit are incorporated on the same substrate is expected to obtain various advantages such as reduction in manufacturing cost, downsizing of a display device, increase in yield, and reduction in throughput.

Further, active matrix light emitting devices (hereinafter, also simply referred to as light emitting devices) having organic light emitting elements as self-emissive elements have been actively researched. The light emitting device is an organic light emitting device (OELD) or an organic light emitting diode (OLED).
c Light Emitting Diode) is also called.

In the active matrix type light emitting device, a switching element (hereinafter
A switching element) is provided, and a driving element (hereinafter referred to as a current control TFT) that controls a current by the switching TFT is operated to cause the EL layer (strictly speaking, a light emitting layer) to emit light. For example, a light emitting device described in JP-A-10-189252 is known.

Since the organic light emitting element emits light by itself, it has high visibility, does not require a backlight required in a liquid crystal display (LCD), is suitable for thinning, and has no limitation in viewing angle. Therefore, the light emitting device using the organic light emitting element is CR
It is receiving attention as a display device that replaces the T and LCD.

The EL element has a layer (hereinafter referred to as an EL layer) containing an organic compound that can obtain luminescence (Electro Luminescence) generated by applying an electric field, an anode, and a cathode. Luminescence in an organic compound includes light emission when returning from a singlet excited state to a ground state (fluorescence) and light emission when returning from a triplet excited state to a ground state (phosphorescence). The light emitting device manufactured by the film forming method can be applied regardless of which light emission is used.

An EL element has a structure in which an EL layer is sandwiched between a pair of electrodes, but the EL layer usually has a laminated structure. A typical example is a laminated structure of "hole transport layer / light emitting layer / electron transport layer" proposed by Tang et al. Of Kodak Eastman Company. This structure has a very high luminous efficiency, and most of the light-emitting devices currently being researched and developed employ this structure.

In addition, a hole injection layer / hole transport layer / light emitting layer / electron transport layer, or hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer may be formed on the anode. A structure in which they are laminated in order is also preferable. You may dope a fluorescent dye etc. with respect to a light emitting layer. Further, all of these layers may be formed by using a low molecular weight material or may be formed by using a high molecular weight material. In addition, these layers may include an inorganic material such as silicon.

In the present specification, all layers provided between the cathode and the anode are generically called EL layers. Therefore, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer described above are all included in the EL layer.

[0011]

The organic compound material forming the EL layer (strictly speaking, the light emitting layer), which can be said to be the center of the EL element, is a low molecular organic compound material or a high molecular compound (polymer).
Organic compound materials have been studied respectively.

The film forming method of these organic compound materials includes
Methods such as an inkjet method, a vapor deposition method, and a spin coating method are known.

However, when considering the production of a full-color flat panel display using red, green, and blue emission colors, the film forming accuracy is not so high, so that the intervals between different pixels are designed to be wide, An insulator called a bank is provided between the pixels.

In addition, as a full-color flat panel display using red, green and blue emission colors, there is an increasing demand for higher definition, higher aperture ratio and higher reliability. Such a demand has become a major issue in advancing the definition of the light emitting device (increase in the number of pixels) and miniaturization of each display pixel pitch accompanying miniaturization. At the same time, demands for improved productivity and cost reduction are also increasing.

[0015]

SUMMARY OF THE INVENTION The present invention intentionally overlaps different organic compound layers of adjacent light emitting elements with each other so that the red, As a full-color flat panel display using green and blue emission colors, it realizes high definition and high aperture ratio.

In the portion where the different organic compound layers are partially overlapped, the emission luminance is reduced to about 1/1000 and the flowing current is also reduced to about 1/1000, but a high voltage (about 9 V or more). It is also possible to emit light to such an extent that it can be visually recognized sufficiently by applying.

Structure 1 of the invention disclosed in the present specification is a light emitting device having a plurality of light emitting elements each having a cathode, an organic compound layer in contact with the cathode, and an anode in contact with the organic compound layer. The light-emitting element includes a cathode, a first light-emitting region composed of an organic compound layer in contact with the cathode, and an anode in contact with the organic compound layer, a cathode, and a stack of organic compound layers in contact with the cathode, A second light emitting region including an anode that is in contact with the stack of the organic compound layers, and a light emitting device.

In the above structure 1, the stack of organic compounds is a stack of an organic compound layer in the first light emitting region and an organic compound layer of a light emitting element adjacent to the one light emitting element and having a different emission color. It is characterized by that.

In the case of full-color RGB,
Three types of light emitting elements are appropriately arranged, and the second configuration of the invention disclosed in this specification is a light emitting element having a cathode, an organic compound layer in contact with the cathode, and an anode in contact with the organic compound layer. A light emitting device having a plurality of: a first light emitting element having a first organic compound layer, a second light emitting element having a second organic compound layer, and a third light emitting element having a third organic compound layer. A light emitting element is arranged, and in the first light emitting element, the first organic compound layer and the second organic compound layer partially overlap each other.

The configuration 3 of the invention disclosed in this specification
A light emitting device having a plurality of light emitting elements each having a cathode, an organic compound layer in contact with the cathode, and an anode in contact with the organic compound layer, the first light emitting element having a first organic compound layer; A second light emitting element having a second organic compound layer and a third light emitting element having a third organic compound layer are arranged, and in the first light emitting element, the first light emitting element is provided.
Part of the organic compound layer and the second organic compound layer overlap, and in the second light-emitting element, the second organic compound layer and the third organic compound layer partially overlap. The light emitting device is characterized in that

Further, in the above constitutions 2 and 3, the first
The light emitting element of (1) is characterized by emitting any one color of red, green, and blue. Further, the first light emitting element, the second light emitting element, and the third light emitting element emit different colors.

Further, in the above constitutions 1, 2, and 3, in sealing, it is preferable to seal the entire light emitting element by using a sealing substrate such as a glass substrate or a plastic substrate.

Further, in the light emitting device, external light (light outside the light emitting device) that has entered the pixel that does not emit light is reflected by the back surface of the cathode (the surface that is in contact with the light emitting layer), and the back surface of the cathode is a mirror. There was a problem that the outside scene was reflected on the observation surface (the surface facing the observer). In addition, in order to avoid this problem, a circular polarization film is attached to the observation surface of the light emitting device so that the outside scenery is not reflected on the observation surface, but the circular polarization film is very expensive. Therefore, there is a problem that the manufacturing cost is increased.

It is an object of the present invention to prevent the light emitting device from being mirror-finished without using a circularly polarizing film, thereby reducing the manufacturing cost of the light emitting device and providing an inexpensive light emitting device. Therefore, the present invention is characterized by using an inexpensive color filter instead of the circularly polarizing film. In the above configurations 1, 2, and 3, in order to improve color purity, it is preferable that the light emitting device includes a color filter corresponding to each pixel. Further, the black portion (black organic resin) of the color filter may be overlapped between the light emitting regions. Further, the black portion of the color filter may overlap with a portion where different organic compound layers partially overlap.

However, a color filter is provided in the emission direction of the emitted light, that is, between the light emitting element and the observer. For example,
When the light-emitting element is not passed through the substrate, the color filter may be attached to the sealing substrate. Alternatively, in the case of passing through a substrate provided with a light emitting element, a color filter may be attached to the substrate provided with the light emitting element. This eliminates the need for circularly polarized film.

Further, the biggest problem in putting the EL element into practical use is that the life of the element is insufficient. In addition, the deterioration of the element appears in the form that the non-light emitting area (dark spot) spreads as the light is emitted for a long time.
Degradation of the L layer has become a major issue.

In order to solve this problem, the present invention has a structure in which a protective film made of a silicon nitride film or a silicon oxynitride film is covered, and a silicon oxide film or a nitriding oxide film is used as a buffer layer for relaxing the stress of the protective film. A feature is that a silicon film is provided.

Structure 4 of the present invention is a light emitting device having a plurality of light emitting elements each having a cathode, an organic compound layer in contact with the cathode, and an anode in contact with the organic compound layer, the anode comprising a transparent conductive film. Is a light emitting device characterized by being covered with a stack of a buffer layer and a protective film.

In the above configuration 4, the buffer layer is
An insulating film containing silicon oxide or silicon oxynitride as a main component, which is obtained by a sputtering method (RF method or DC method) or a remote plasma method, and a protective film containing silicon nitride or silicon oxynitride as a main component, which is obtained by the sputtering method. The insulating film may be

In addition, when a transparent conductive film (typically ITO) is used as a cathode or an anode and a protective film is formed thereon, the above-mentioned constitution 4 is extremely useful. When a silicon nitride film is formed in contact with a film made of a transparent conductive film by a sputtering method, impurities (In,
Sn, Zn, etc.) may enter the silicon nitride film,
By forming the buffer layer of the present invention in between, it is possible to prevent impurities from being mixed into the silicon nitride film. By forming the buffer layer with the above configuration 4, it is possible to prevent impurities (In, Sn, etc.) from mixing in from the transparent conductive film and form an excellent protective film without impurities.

Further, in the manufacturing method for realizing the above-mentioned constitution 4, it is preferable that the buffer layer and the protective film use different chambers, and the constitution relating to the manufacturing method of the present invention is that the cathode, the organic compound layer in contact with the cathode, A method of manufacturing a light emitting device having a plurality of light emitting elements having an anode in contact with the organic compound layer, the method comprising: forming an anode made of a transparent conductive film and a buffer layer covering the anode in the same chamber; In the method for manufacturing a light emitting device, a protective film is formed in different chambers.

The active matrix type light emitting device may have two structures in the light emitting direction. One is a structure in which light emitted from an EL element passes through a counter substrate and is emitted to enter the eyes of an observer. In this case, the observer can recognize the image from the counter substrate side. The other is a structure in which the light emitted from the EL element passes through the element substrate and is emitted to enter the eyes of the observer. In this case, the observer can recognize the image from the element substrate side.

The present invention provides a manufacturing apparatus capable of making these two structures separately.

The structure 5 of the present invention relates to a manufacturing apparatus, and is a film formation of a load chamber, a first transfer chamber connected to the load chamber, and an organic compound layer connected to the first transfer chamber. A chamber, and a second transfer chamber connected to the first transfer chamber,
And a metal layer deposition chamber, a transparent conductive film deposition chamber, and a protective film deposition chamber connected to the second transfer chamber, and a third transfer chamber connected to the second transfer chamber. And a dispenser chamber connected to the third transfer chamber, a sealing substrate loading chamber, and a sealing chamber, the manufacturing apparatus.

In the above structure 5, a plurality of targets are provided in the transparent conductive film forming chamber, and at least a target made of a transparent conductive material and a target made of silicon are provided. There is. Alternatively, in the above configuration 5, the film forming chamber of the transparent conductive film is
It is characterized in that a device for forming a film by the remote plasma method is provided.

Further, in the above-mentioned structure 5, a substrate to which a desiccant is stuck is installed in the sealed substrate loading chamber. A vacuum exhaust system is provided in the sealed substrate loading chamber.

Further, in the above configuration 5, a vacuum exhaust system is also provided in the first transfer chamber, the second transfer chamber, the third transfer chamber, and the sealing chamber.

Further, it is possible to manufacture the above-mentioned structure 4 provided with the buffer layer and the protective film with high throughput by using the manufacturing apparatus shown in the above structure 5.

[0039]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below.

(Embodiment 1) Here, the present invention will be described below by taking 3 × 3 pixels as an example among a large number of pixels regularly arranged in a pixel portion.

FIG. 1A is a top view. Figure 1 (A)
In the middle, the light emitting area 10R shows a red light emitting area, the light emitting area 10G shows a green light emitting area, the light emitting area 10B shows a blue light emitting area, and these three light emitting areas are full color. Has been realized.

FIG. 1B is a sectional view taken along the chain line AA '. In the present invention, FIG.
As shown in, an EL layer that emits red light (for example, Alq
EL in which NileRed, which is a red light emitting dye, is added to ₃
Layer 17 and an EL layer that emits green light (for example, Alq ₃ with D
EL layer with MQd (dimethylquinacridone) added 1
8 are partially overlapped with each other to form a laminated portion 21. Further, an EL layer 18 that emits green light and an EL layer 19 that emits blue light (for example, an EL layer in which perylene is added to BAlq) 19 are partially overlapped to form a laminated portion 22. Although FIG. 1 shows an example in which only one side (right end) of the light emitting region is overlapped, it is not particularly limited as long as it is a part of the peripheral edge, and both sides, one side on the upper side, or one side on the lower side are overlapped. May be.

Since the EL layers may be partially overlapped as described above, the method for forming the organic compound layer (the ink jet method, the vapor deposition method, the spin coating method, etc.) and the film forming accuracy thereof may be used. Instead, as a full-color flat panel display using red, green, and blue emission colors, high definition and high aperture ratio can be realized.

Further, in FIG. 1B, the TFT 1 is an element (p-channel type TFT or n-channel type TFT) for controlling the current flowing in the EL layer 17 which emits red light,
Reference numerals 4 and 7 are source electrodes or drain electrodes. Also,
The TFT 2 is an element that controls the current flowing through the EL layer 18 that emits green light, and 5 and 8 are source electrodes or drain electrodes. The TFT 3 is an EL layer 19 that emits blue light.
6 and 9 are source electrodes or drain electrodes. Reference numerals 15 and 16 are interlayer insulating films made of an organic insulating material or an inorganic insulating film material.

Further, 11 to 13 are cathodes (or anodes) of the organic light emitting element, and 20 is an anode (or cathode) of the organic light emitting element. When 11 to 13 are used as anodes, p-channel type TFTs are preferable, and when they are used as cathodes, n-channel type TFTs are preferable. When 11 to 13 are used as the cathode, a material having a small work function (Al, Ag, Li, Ca, or an alloy thereof MgAg, MgIn, AlLi, CaF ₂ , or C) is used.
aN) may be used. When 11 to 13 are used as anodes, Ti, TiN, TiSi _X N _Y , Ni, W,
WSi _X , WN _X , WSi _{X NY} , NbN, Mo, Cr, P
an element selected from t, Zn, Sn, In, or Mo,
Alternatively, a film containing an alloy material or a compound material containing the above element as a main component or a laminated film thereof may be used. Both ends of 11 to 13 and the space between them are covered with an inorganic insulator 14. Here, 11 to 13 are used as a cathode and Cr is used, and 20 is used as an anode, and a transparent conductive film having a large work function (ITO (indium oxide-tin oxide alloy), indium oxide-zinc oxide alloy (In ₂ O ₃ —ZnO), zinc oxide). (ZnO) or the like) is used to pass the light from each light emitting element. Further, 11 to 13 are used as anodes and 20 is used as a cathode.
n, AlLi, etc.) and a transparent conductive film may be used.

Further, the sealing substrate 30 is sealed with a sealing material (not shown here) so as to maintain a distance of about 10 μm.
Is attached, and all the light emitting elements are sealed. Further, in order to enhance color purity, the sealing substrate 30 is provided with a color filter corresponding to each pixel. Among the color filters, the red colored layer 31b is provided so as to face the red light emitting region 10R, the green colored layer 31c is provided so as to face the green light emitting region 10G, and the blue colored layer 31d is provided for the blue light emitted. It is provided so as to face the region 10B.
Areas other than the light emitting area are shielded by the black portion of the color filter, that is, the light shielding portion 31a. In addition,
The light shielding portion 31a is composed of a metal film (chromium or the like) or an organic material film containing a black pigment.

In the present invention, the circularly polarizing plate is unnecessary by providing the color filter.

FIG. 1C is a sectional view taken along the chain line BB '. Also in FIG. 1C, 11a
The both ends of 11 c and 11 c are covered with the inorganic insulator 14. Here, an example is shown in which the EL layer 17 that emits red light is common, but the EL layer 17 is not particularly limited, and an EL layer may be formed for each pixel that emits the same color.

Here, the light emitting regions 10R, 10G, 10B
Between the light emission luminance in the display and the applied voltage, and the laminated portion 21
Experiments were carried out to compare the relationship between the light emission luminance and the applied voltage at -23, and the results are shown in FIG.

FIG. 2D is a graph in which the horizontal axis represents voltage (V) and the vertical axis represents luminance (cd / m ² ). Figure 2
In (D), the data indicated by circles show the relationship between the voltage and the luminance of the light emitting element composed of a total of three layers of the anode, the organic light emitting layer, and the cathode. Further, the data indicated by square marks show the relationship between the voltage and the brightness of the light emitting element composed of a total of four layers of the anode, the first organic light emitting layer, the second organic light emitting layer, and the cathode. It is a thing. Here, the organic light emitting layer has a structure in which a light emitting layer, a hole transport layer (HTL), and a hole injection layer (HIL) are stacked. That is, FIG.
The data indicated by squares in (D) is the laminated structure shown in FIG. 2A, that is, the anode, the first organic light emitting layer (first light emitting layer, first hole transporting layer, 1 hole injection layer), and a second
Organic light emitting layer (second light emitting layer, second hole transport layer, second
2 is a graph showing the relationship between the voltage and the brightness of a light emitting device in which a positive hole injection layer (1) and a cathode are stacked.

As shown in FIG. 2 (D), the brightness of light emitted from a light emitting element composed of four layers including an anode, two organic light emitting layers, and a cathode is shown in FIG. 2 (C). The laminated structure shown in Fig. 3, that is, the total of the anode, the organic light emitting layer, and the cathode is 3
Compared to the brightness of light emitted from the light emitting element composed of layers, the brightness is reduced by about four digits. It can be expected that this is because when two organic light emitting layers are stacked, a reverse diode is formed, which makes it difficult for current to flow. Further, it can be expected that the thicker the film, the higher the resistance and the less current can flow.

Considering in association with FIG. 1, the light emitting region 10
Light emission luminances of R, 10G, and 10B are luminances of the laminated structure illustrated in FIG. 2C, and light emission luminances of the laminated portions 21 to 23 can be regarded as luminance of the laminated structure illustrated in FIG. 2A. ,
The light emission brightness in the laminated portions 21 to 23 is equal to the light emission regions 10R and 1R.
It is about 1/1000 of the emission brightness at 0G and 10B.

At least one of the organic light emitting layers
A layer, for example, a hole injection layer may be shared, and a first organic light emitting layer and a second organic light emitting layer may be partially overlapped thereon.
The laminated structure shown in FIG. 2B in which the hole injection layer is common, that is, the anode, the first organic light-emitting layer (first light-emitting layer, first hole-transporting layer), and the second organic layer. FIG. 8 is a graph showing the relationship between the voltage and luminance of a light emitting element in which a light emitting layer (second light emitting layer, second hole transporting layer, first hole injecting layer) and a cathode are stacked. Results similar to those of the laminated structure shown in FIG.

FIG. 3 shows an example in which the structure is partially different from that of FIG. Note that, for simplification, in FIG. 3, the same parts as those in FIG.

As shown in FIG. 3A, a bank 25 made of an organic resin is provided between the light emitting region 10R and the light emitting region 10G.
Another example is provided between the light emitting region 10G and the light emitting region 10B. When such a bank 25 is formed, it is inevitably difficult to narrow the distance between the light emitting region 10G and the light emitting region 10B, although it depends on the patterning accuracy. In many cases, this bank was provided around each pixel.
In the above, the bank is provided for each column of pixels.

In FIG. 1, since no bank is provided, the interval between the light emitting regions can be narrowed, and a high-definition light emitting device can be realized.

Further, in FIGS. 1 and 3, a protective film 33 is formed in order to enhance reliability. This protective film 33
Is an insulating film containing silicon nitride or silicon nitride oxide as a main component. In order to reduce the film stress of the protective film 33, the buffer layer 32 is formed before forming the protective film. If the buffer layer 32 is formed of an insulating film containing silicon oxide or silicon oxynitride as a main component, which is formed using a DC sputtering apparatus, an RF sputtering apparatus, or a film forming apparatus using a remote plasma method, Good. In addition, in FIGS. 1 and 3, in order to allow light emission to pass through the protective film, it is preferable that the thickness of the protective film be as thin as possible.

1 and 3, a transparent conductive film (typically ITO) is used as the cathode or the anode, and the protective film 33 is to be formed in contact with the film made of the transparent conductive film. , Impurities contained in the transparent conductive film (I
n, Sn, Zn, etc.) may enter the protective film,
By forming the buffer layer 32 between them, it is possible to prevent impurities from being mixed into the protective film.

Although FIGS. 1 and 3 show the structure in which light is emitted from the EL layer through the protective film toward the sealing substrate, it goes without saying that the structure is not limited to the above. For example, light may be emitted from the EL layer in the direction of passing through the interlayer insulating film. In that case, TF may be emitted.
A color filter may be appropriately provided on the substrate provided with T.

Embodiment Mode 2 Here, a buffer layer and a protective film will be described with reference to FIG.

FIG. 5A is a schematic view showing an example of a laminated structure in the case of emitting light in the direction of the arrow in the figure.
In FIG. 5A, 200 is a cathode (or an anode), 201 is an EL layer, 202 is an anode (or cathode), 203 is a stress relaxation layer (buffer layer), and 204 is a protective film. When light is emitted in the direction of the arrow in the drawing, a light-transmitting material, a very thin metal film, or a stacked layer thereof is used as 202.

As the protective film 204, an insulating film containing silicon nitride or silicon oxynitride as a main component, which is obtained by a sputtering method, may be used. A silicon nitride film can be obtained by using a silicon target and forming it in an atmosphere containing nitrogen and argon. Alternatively, a silicon nitride target may be used. In order to reduce the film stress of the protective film 204, the buffer layer 203 is formed before forming the protective film. If the buffer layer 203 is formed of an insulating film containing silicon oxide or silicon oxynitride as a main component, the buffer layer 203 is formed using a DC sputtering apparatus, an RF sputtering apparatus, or a film formation apparatus using a remote plasma method. Good. In the case of using a sputtering apparatus, for example, a silicon target may be used and formed in an atmosphere containing oxygen and argon or an atmosphere containing nitrogen, oxygen, and argon. Further, in order to allow light emission to pass through the protective film, it is preferable that the thickness of the protective film be as thin as possible.

With such a structure, since the light emitting element can be protected, high reliability can be obtained.

FIG. 5B is a schematic view showing an example of a laminated structure when light is emitted in the direction of the arrow in the figure.
In FIG. 5B, 300 is a cathode (or an anode), 301 is an EL layer, 302 is an anode (or cathode), 303 is a stress relaxation layer (buffer layer), and 304 is a protective film.

Similar to the structure shown in FIG. 5A, since the light emitting element can be protected, high reliability can be obtained.

In addition, the laminated structure of FIG.
FIG. 4 shows an example of a manufacturing apparatus (multi-chamber method) capable of making different laminated structures of (B).

In FIG. 4, 100a to 100k, 10
0m to 100u are gates, 101 and 119 are delivery rooms, 1
02, 104a, 107, 108, 111, 114 are transfer chambers, 105, 106R, 106B, 106G, 10
9, 110, 112 and 113 are film forming chambers, 103 is a pretreatment chamber, 117a and 117b are sealed substrate loading chambers, 115 is a dispenser chamber, 116 is a sealing chamber, and 118 is an ultraviolet irradiation chamber.

A procedure for carrying in a substrate on which a TFT and a cathode are provided in advance to the manufacturing apparatus shown in FIG. 4 to form the laminated structure shown in FIG. 5A will be described below.

First, the TFT and the cathode 20 are placed in the delivery chamber 101.
A substrate provided with 0 is set. Next is the delivery room 101
It is transported to the transport chamber 102 connected to. It is preferable that the carrier chamber be evacuated in advance so that moisture and oxygen are not present as much as possible, and then an inert gas is introduced to bring the pressure to atmospheric pressure.

Further, the transfer chamber 102 is connected to an evacuation processing chamber that evacuates the transfer chamber. The vacuum evacuation processing chamber is equipped with a magnetic levitation type turbo molecular pump, a cryopump, or a dry pump. As a result, the ultimate vacuum in the transfer chamber can be set to 10 ⁻⁵ to 10 ⁻⁶ Pa, and the back diffusion of impurities from the pump side and the exhaust system can be controlled. To prevent impurities from being introduced into the device, the gas to be introduced is:
An inert gas such as nitrogen or a rare gas is used. As these gases introduced into the apparatus, those highly purified by a gas purifier before being introduced into the apparatus are used. Therefore, it is necessary to provide a gas purifier so that the gas is highly purified and then introduced into the film forming apparatus. As a result, oxygen, water, and other impurities contained in the gas can be removed in advance, so that these impurities can be prevented from being introduced into the apparatus.

Further, in order to remove moisture and other gas contained in the substrate, it is preferable to perform annealing for deaeration in a vacuum, which is transferred to the pretreatment chamber 103 connected to the transfer chamber 102, Therefore, annealing may be performed. Further, if it is necessary to clean the surface of the cathode, it may be transported to the pretreatment chamber 103 connected to the transport chamber 102 and cleaned there.

Next, the substrate 104c is transferred from the transfer chamber 102 to the transfer chamber 104 without being exposed to the atmosphere, and then transferred to the film forming chamber 106R by the transfer mechanism 104b to form an EL layer emitting red light on the cathode 200. It is formed appropriately. Here, an example of forming by vapor deposition is shown. Deposition chamber 1
In 06R, the deposition surface of the substrate is set to face downward. Note that it is preferable that the deposition chamber be evacuated before loading the substrate.

For example, the degree of vacuum is 5 × 10 ⁻³ Torr.
(0.665 Pa) or less, preferably 10 ⁻⁴ to 10 ⁻⁶ P
Vapor deposition is performed in the film forming chamber 106R that is evacuated to a. During vapor deposition, the organic compound is vaporized in advance by resistance heating, and a shutter (not shown) is opened during vapor deposition to scatter toward the substrate. The vaporized organic compound is
It scatters upward and is deposited on the substrate through an opening (not shown) provided in a metal mask (not shown). The temperature (T ₁ ) of the substrate is 50 to 200 ° C., preferably 65 to 150 by means of heating the substrate during vapor deposition.
℃.

When three types of EL layers are to be formed in order to obtain full color, after forming the film in the film forming chamber 106R, the film forming chambers 106G and 106B may be sequentially formed. .

After the desired EL layer 201 is obtained on the cathode 200, the carrier chamber 104 is then exposed to the atmosphere.
After the substrate is transferred from the transfer chamber 107 to the transfer chamber 107, the substrate is transferred from the transfer chamber 107 to the transfer chamber 108 without being exposed to the atmosphere.

Next, the EL layer 20 is transferred to the film forming chamber 109 by the transfer mechanism installed in the transfer chamber 108.
An anode 202 made of a transparent conductive film is appropriately formed on the first layer.
Here, a sputtering apparatus in which a plurality of targets are provided in the film formation chamber 109 and which includes at least a target made of a transparent conductive material and a target made of silicon is used. Therefore, the anode 202 and the stress relaxation layer 203 can be formed in the same chamber. A dedicated film forming chamber for forming the stress relaxation layer 203 may be separately provided,
In that case, a sputtering device (RF system or DC system),
Alternatively, an apparatus using the remote plasma method may be used.

Next, the transfer chamber 1 is exposed without being exposed to the atmosphere.
The film is transferred from 08 to the film forming chamber 113 to form the protective film 204 on the stress relaxation layer 203. Here, the sputtering apparatus is provided with a target made of silicon or a target made of silicon nitride in the film formation chamber 113. The silicon nitride film can be formed by setting the atmosphere in the deposition chamber to a nitrogen atmosphere or an atmosphere containing nitrogen and argon.

Through the above steps, the light emitting element covered with the protective film and the stress relaxation layer is formed on the substrate.

Next, the substrate on which the light emitting element is formed is transferred from the transfer chamber 108 to the transfer chamber 111 and further transferred from the transfer chamber 111 to the transfer chamber 114 without being exposed to the atmosphere.

Next, the substrate on which the light emitting element is formed is transferred from the transfer chamber 114 to the sealing chamber 116. The sealing chamber 1
It is preferable that a sealing substrate provided with a sealing material is prepared for 16.

The sealing substrate is a sealing substrate loading chamber 117a,
117b is externally set. In order to remove impurities such as water, annealing is performed in a vacuum in advance, for example,
Annealing is preferably performed in the sealed substrate loading chambers 117a and 117b. When the sealing material is formed on the sealing substrate, the transfer chamber 108 is set to the atmospheric pressure, and then the sealing substrate is transferred from the sealing substrate load chamber to the dispenser chamber 115, and the substrate provided with the light-emitting element. A sealing material for bonding with is formed, and the sealing substrate on which the sealing material is formed is transferred to the sealing chamber 116.

Then, in a vacuum or an inert atmosphere, the sealing substrate provided with the sealing material and the substrate provided with the light emitting element are bonded together. Here, an example in which the sealing material is formed on the sealing substrate is shown, but the sealing material is not particularly limited, and the sealing material may be formed on the substrate on which the light emitting element is formed.

Next, the pair of bonded substrates is transferred from the transfer chamber 114 to the ultraviolet irradiation chamber 118. Next, UV light is irradiated in the ultraviolet irradiation chamber 118 to cure the sealing material. Although the ultraviolet curable resin is used as the sealant here, it is not particularly limited as long as it is an adhesive.

Next, the transfer chamber 114 is transferred to the delivery chamber 119 and taken out.

As described above, by using the manufacturing apparatus shown in FIG. 4, it is not necessary to expose the air to the outside until the light emitting element is completely enclosed in the sealed space, so that a highly reliable light emitting apparatus can be manufactured. Becomes

It is also possible to use an in-line type film forming apparatus.

A procedure for carrying in a substrate having a TFT and an anode provided in advance to the manufacturing apparatus shown in FIG. 4 to form the laminated structure shown in FIG. 5B will be described below.

First, the TFT and the anode 30 are placed in the delivery room 101.
A substrate provided with 0 is set. Next is the delivery room 101
It is transported to the transport chamber 102 connected to. It is preferable that the carrier chamber be evacuated in advance so that moisture and oxygen are not present as much as possible, and then an inert gas is introduced to bring the pressure to atmospheric pressure. A transparent conductive material is used as a material forming the anode 300, and an indium tin compound, zinc oxide, or the like can be used. Then, it is conveyed to the pretreatment chamber 103 connected to the carry-in chamber 102. In this pretreatment chamber, cleaning of the surface of the anode, oxidation treatment, heat treatment, etc. may be performed. As the cleaning of the anode surface, ultraviolet ray irradiation in vacuum or oxygen plasma treatment is performed to clean the anode surface. Moreover, as the oxidation treatment, 100 to 1
It suffices to irradiate ultraviolet rays in an atmosphere containing oxygen while heating at 20 ° C. This is effective when the anode is an oxide such as ITO. The heat treatment is performed at a heating temperature of 50 ° C. or higher, preferably 65 to 1 which the substrate can withstand in vacuum.
Heating at 50 ° C. may be performed, and impurities such as oxygen and moisture attached to the substrate and impurities such as oxygen and moisture in the film formed over the substrate are removed. Particularly, since the EL material is easily deteriorated by impurities such as oxygen and water, it is effective to heat it in vacuum before vapor deposition.

Next, after the substrate 104c is transferred from the transfer chamber 102 to the transfer chamber 104 without being exposed to the atmosphere, it is transferred to the film forming chamber 105 by the transfer mechanism 104b and one layer of the EL layer is formed on the anode 300. A certain hole injection layer or hole transport layer is appropriately formed. Here, an example of forming by vapor deposition is shown. The film formation chamber 105 is set with the film formation surface of the substrate facing downward. Note that it is preferable that the deposition chamber be evacuated before loading the substrate.

Next, without exposing to the atmosphere, the transport mechanism 104b transports the EL layer to the film formation chamber 106R and appropriately forms an EL layer emitting red light on the hole injection layer or the hole transport layer.

When three types of EL layers are to be formed in order to obtain full color, after forming a film in the film forming chamber 106R, film formation may be performed in each of the film forming chambers 106G and 106B sequentially. .

After the desired EL layer 301 is obtained on the anode 300, the carrier chamber 104 is then exposed to the atmosphere.
After the substrate is transferred from the transfer chamber 107 to the transfer chamber 107, the substrate is transferred from the transfer chamber 107 to the transfer chamber 108 without being exposed to the atmosphere.

Next, by the transfer mechanism installed in the transfer chamber 108, the film is transferred to the film forming chamber 110 or 112, and the cathode 302 made of a metal material is appropriately formed on the EL layer 301. Here, the film formation chamber 111 is an evaporation device or a sputtering device.

Next, the transfer chamber 1 is exposed without being exposed to the atmosphere.
The stress relaxation layer 303 and the protective film 304 are transferred from 08 to the film formation chamber 113. Here, the sputtering apparatus is provided with a target made of silicon, a target made of silicon nitride, or silicon oxide in the film formation chamber 113.
A silicon oxide film, a silicon oxynitride film, or a silicon nitride film can be formed by using a nitrogen atmosphere, an atmosphere containing nitrogen and argon, or an atmosphere containing oxygen, nitrogen, and argon as the atmosphere in the deposition chamber.

Through the above steps, the light emitting element covered with the protective film and the stress relaxation layer is formed on the substrate.

Since the subsequent steps are the same as the procedure for forming the laminated structure shown in FIG. 5A, the description thereof is omitted here.

As described above, by using the manufacturing apparatus shown in FIG. 4, the laminated structure shown in FIG. 5A and the laminated structure shown in FIG. 5B can be produced separately.

Further, this embodiment mode can be freely combined with the first embodiment mode.

The present invention having the above structure will be described in more detail with reference to the following examples.

(Example) [Example 1] In this example, an active matrix light emitting device formed on an insulating surface will be described. FIG. 6 is a cross-sectional view of an active matrix light emitting device. Although a thin film transistor (hereinafter referred to as “TFT”) is used as the active element here, a MOS transistor may be used.

A top gate type TFT is used as the TFT.
(Specifically, a planar type TFT is exemplified, but a bottom gate type TFT (typically an inverted stagger type TFT) can also be used.

In this embodiment, a substrate made of glass such as barium borosilicate glass or aluminoborosilicate glass, a quartz substrate, a silicon substrate, a metal substrate or a stainless steel substrate having an insulating film formed on its surface is used as the substrate 800. Good. Further, a plastic substrate having heat resistance that can withstand the processing temperature of this embodiment may be used, or a flexible substrate may be used.

First, as a lower layer 801 of a base insulating film by a plasma CVD method on a heat resistant glass substrate (substrate 800) having a thickness of 0.7 mm, a film forming temperature of 40 by a plasma CVD method.
Silicon oxynitride film (composition ratio Si = 32%, O = 27) produced from source gases SiH ₄ , NH ₃ , and N ₂ O at 0 ° C.
%, N = 24%, H = 17%) to 50 nm (preferably 1)
0-200 nm). Then, after cleaning the surface with ozone water, the surface oxide film was diluted with diluted hydrofluoric acid (1/100 dilution)
To remove. Then, as the upper layer 802 of the base insulating film,
Film formation temperature of 400 ° C. by plasma CVD method, source gas SiH
₄ , silicon oxynitride film made of N ₂ O (composition ratio S
i = 32%, O = 59%, N = 7%, H = 2%)
A semiconductor film having an amorphous structure (here, amorphous) is formed by laminating a film having a thickness of 0 nm (preferably 50 to 200 nm) and further forming the film by a plasma CVD method at a film forming temperature of 300 ° C. and a film forming gas SiH ₄ without exposing to the atmosphere. A silicon film) is formed with a thickness of 54 nm (preferably 25 to 200 nm).

In this embodiment, the base insulating film has a two-layer structure.
As shown, a single layer film of an insulating film containing silicon as a main component or 2
You may form as a structure which laminated | stacked more than one layer. Also half
The material of the conductor film is not limited, but is preferably silicon or
Is silicon germanium (Si _XGe_1-X(X = 0.00
01-0.02)) using an alloy or the like, known means (spa)
To the sputtering method, LPCVD method, plasma CVD method, etc.)
It may be formed more. In addition, plasma CVD equipment
A leaf type device or a batch type device may be used. Well
Also, in the same film forming chamber, as the base insulating film without exposing to the atmosphere
The semiconductor film may be continuously formed.

Next, after cleaning the surface of the semiconductor film having an amorphous structure, an extremely thin oxide film of about 2 nm is formed on the surface with ozone water. Next, a slight amount of impurity element (boron or phosphorus) is doped to control the threshold value of the TFT. Here, an ion doping method in which diborane (B ₂ H ₆ ) is plasma-excited without mass separation is used, the doping condition is an acceleration voltage of 15 kV, and diborane is hydrogen at 1%.
The flow rate of the diluted gas is 30 sccm, and the dose is 2 ×
Boron is added to the amorphous silicon film at 10 ¹² / cm ² .

Then, a nickel acetate salt solution containing 10 ppm by weight of nickel was applied by a spinner. Instead of coating, a method of spattering nickel element over the entire surface by a sputtering method may be used.

Next, heat treatment is performed for crystallization to form a semiconductor film having a crystal structure. For this heat treatment, heat treatment of an electric furnace or irradiation of strong light may be used. When it is performed by heat treatment in an electric furnace, it is 4 to 24 at 500 to 650 ° C.
You can do it in time. Here, after the heat treatment for dehydrogenation (500 ° C., 1 hour), the heat treatment for crystallization (5
50 ° C., 4 hours) to obtain a silicon film having a crystal structure. Although crystallization is performed here by heat treatment using a furnace, crystallization may be performed by a lamp annealing apparatus that can perform crystallization in a short time.

Then, after removing the oxide film on the surface of the silicon film having a crystal structure with dilute hydrofluoric acid or the like, a solid-state laser capable of continuous oscillation was used to obtain crystals with a large grain size, and the second harmonic of the fundamental wave was used. The semiconductor film is irradiated with waves to the fourth harmonic. Irradiation with laser light is performed in the air or an oxygen atmosphere. In addition,
Since it is performed in the air or in an oxygen atmosphere, an oxide film is formed on the surface by laser light irradiation. Typically N
The second harmonic (532 nm) or the third harmonic (355 nm) of the d: YVO ₄ laser (fundamental wave 1064 nm) may be applied. Laser light emitted from a continuous oscillation YVO ₄ laser with an output of 10 W is converted into a harmonic by a non-linear optical element. There is also a method in which a YVO ₄ crystal and a non-linear optical element are put in a resonator to emit a higher harmonic wave. Then, preferably, a rectangular or elliptical laser beam is formed on the irradiation surface by an optical system, and the object to be processed is irradiated. At this time, the energy density of approximately 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, the semiconductor film may be moved relative to the laser light at a speed of about 10 to 2000 cm / s for irradiation.

Of course, the TFT can be manufactured by using the silicon film having the crystal structure before the second harmonic of the continuous wave YVO ₄ laser is irradiated, but the silicon film having the crystal structure after the laser light irradiation is used. This is desirable because the crystallinity is improved and the electrical characteristics of the TFT are improved. For example, when a TFT is manufactured using a silicon film having a crystal structure before the laser light irradiation, the mobility is 3
Although it is about 00 cm ² / Vs, the mobility is remarkably improved to about 500 to 600 cm ² / Vs when a TFT is manufactured using the silicon film having the crystal structure after the laser light irradiation.

Note that here, after nickel was used as a metal element for promoting crystallization of silicon and crystallization was performed, the second harmonic of a continuous wave YVO ₄ laser was further irradiated, but it is not particularly limited. Even after a silicon film having a crystalline structure is formed and heat treatment for dehydrogenation is performed, the second harmonic of the continuous wave YVO ₄ laser is irradiated to obtain a silicon film having a crystalline structure. Good.

A pulsed laser may be used instead of the continuous wave laser. When a pulsed excimer laser is used, the frequency is 300 Hz and the laser energy density is 100 to 1000 mJ / cm ² (typical It is desirable to set it to 200 to 800 mJ / cm ² ). At this time, the laser beams may be overlapped by 50 to 98%.

Next, in addition to the oxide film formed by the irradiation of the laser light, the surface is treated with ozone water for 120 seconds to form a barrier layer made of an oxide film having a total thickness of 1 to 5 nm. In this example, the barrier layer was formed using ozone water, but the method of oxidizing the surface of the semiconductor film having a crystal structure by irradiation of ultraviolet rays in an oxygen atmosphere or the surface of the semiconductor film having a crystal structure by oxygen plasma treatment was used. 1 to 10 nm by oxidation method, plasma CVD method, sputtering method, vapor deposition method, etc.
A barrier layer may be formed by depositing a certain amount of oxide film. Further, the oxide film formed by laser light irradiation may be removed before forming the barrier layer.

Then, plasma CVD is performed on the barrier layer.
50 nm to 400 n of an amorphous silicon film containing an argon element to be a gettering site by a sputtering method or a sputtering method.
m, here a film thickness of 150 nm is formed. In this embodiment, a silicon target is formed by a sputtering method in an argon atmosphere at a pressure of 0.3 Pa to form a film.

Then, the resultant is placed in a furnace heated to 650 ° C. and heat-treated for 3 minutes for gettering to reduce the nickel concentration in the semiconductor film having a crystalline structure. A lamp annealing device may be used instead of the furnace.

Then, the barrier layer is used as an etching stopper to selectively remove the amorphous silicon film containing the argon element which is the gettering site, and then the barrier layer is selectively removed with dilute hydrofluoric acid. In addition, at the time of gettering,
Since nickel tends to move to a region having a high oxygen concentration, it is desirable to remove the barrier layer made of an oxide film after gettering.

Next, after forming a thin oxide film with ozone water on the surface of the obtained silicon film having a crystal structure (also referred to as a polysilicon film), a mask made of a resist is formed and an etching treatment is performed to a desired shape. Forming a semiconductor layer separated into islands. After forming the semiconductor layer, the resist mask is removed.

Next, after removing the oxide film with an etchant containing hydrofluoric acid and simultaneously cleaning the surface of the silicon film,
An insulating film containing silicon as its main component to be the gate insulating film 803 is formed. Here, 115 n is formed by the plasma CVD method.
m thickness of silicon oxynitride film (composition ratio Si = 32%,
O = 59%, N = 7%, H = 2%).

Then, a film thickness of 20 to 10 is formed on the gate insulating film.
A first conductive film having a thickness of 0 nm and a second conductive film having a thickness of 100 to 400 nm are stacked. In this embodiment, a tantalum nitride film with a thickness of 50 nm and a thickness of 3 are formed on the gate insulating film 803.
A 70 nm tungsten film is sequentially stacked, and patterning is performed by the following procedure to form each gate electrode and each wiring.

As the conductive material for forming the first conductive film and the second conductive film, Ta, W, Ti, Mo, Al, Cu
It is formed of an element selected from the above or an alloy material or a compound material containing the above element as a main component. A semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus as the first conductive film and the second conductive film,
You may use AgPdCu alloy. Further, the structure is not limited to the two-layer structure.
A three-layer structure in which a Si) film and a titanium nitride film having a film thickness of 30 nm are sequentially laminated may be used. In the case of a three-layer structure, tungsten nitride may be used instead of tungsten of the first conductive film, or aluminum may be used instead of the aluminum-silicon alloy (Al-Si) film of the second conductive film. An alloy film of titanium (Al—Ti) may be used, or a titanium film may be used instead of the titanium nitride film of the third conductive film.
Further, it may have a single layer structure.

An ICP (Inductively Coupled Plasma) etching method may be used for etching the first conductive film and the second conductive film (first etching process and second etching process). ICP
By using the etching method and adjusting the etching conditions (the amount of power applied to the coil-type electrode, the amount of power applied to the electrode on the substrate side, the temperature of the electrode on the substrate side, etc.), the film can be formed into a desired taper shape. It can be etched. Here, after forming a mask made of resist,
As the first etching condition, 700 W of RF (13.56 MHz) power was applied to the coil type electrode at a pressure of 1 Pa, CF ₄ , Cl ₂ and O ₂ were used as etching gases, and the gas flow rate ratio of each was 25. / 25/10 (sccm), and RF (13.56 MHz) power of 150 W is also applied to the substrate side (sample stage) to apply a substantially negative self-bias voltage. The electrode area size on the substrate side is 12.5 cm x
12.5 cm, and the coil-shaped electrode area size (here, a quartz disk provided with a coil) is a disk having a diameter of 25 cm. The W film is etched under the first etching conditions to make the end portions tapered. After that, the mask made of resist was not removed, and the second etching conditions were changed to CF ₄ and Cl _{2 as} etching gases, and the flow rate ratio of each gas was set to 30/30 (sccm).
500 W RF (13.56MH) to coil type electrode with pressure of Pa
z) Power was applied to generate plasma and etching was performed for about 30 seconds. 20 on the substrate side (sample stage)
RF (13.56MHz) power of W is applied and a substantially negative self-bias voltage is applied. _Second mixture of CF ₄ and Cl 2
Under the above etching conditions, the W film and the TaN film are etched to the same extent. Note that here, the first etching condition and the second etching condition are referred to as a first etching process.

Then, a second etching process is performed without removing the resist mask. Here, CF ₄ and Cl ₂ are used as the etching gas as the third etching condition, and the gas flow rate ratio of each is 30/30 (scc).
m) and a pressure of 1 Pa is applied to the coil-type electrode to generate R of 500 W.
F (13.56 MHz) power was applied to generate plasma and etching was performed for 60 seconds. 2 on the substrate side (sample stage)
A 0 W RF (13.56 MHz) power is applied and a substantially negative self-bias voltage is applied. After that, the mask made of resist is not removed, and the fourth etching condition is changed. CF ₄ , Cl _2, and O ₂ are used as etching gas, and the gas flow rate ratio of each gas is 20/20/20 (sccm). And 1
500 W RF (13.56MH) to coil type electrode with pressure of Pa
z) Power was applied to generate plasma and etching was performed for about 20 seconds. 20 on the substrate side (sample stage)
RF (13.56MHz) power of W is applied and a substantially negative self-bias voltage is applied. Note that here, the third etching condition and the fourth etching condition are referred to as the second etching treatment. At this stage, the first conductive layer 80
4a is a lower layer and the second conductive layer 804b is an upper layer, and a gate electrode 804 and each electrode 805 to 807 are formed.

Then, after removing the resist mask, a first doping process is performed to dope the entire surface with the gate electrodes 804 to 807 as masks. The first doping treatment may be performed by an ion doping method or an ion implantation method. The condition of the ion doping method is that the dose amount is 1.
5 × 10 ¹⁴ atoms / cm ² and acceleration voltage of 60 to 100 k
Perform as eV. Phosphorus (P) or arsenic (As) is typically used as the impurity element imparting n-type. The first impurity regions (n ⁻ regions) 822 to 825 in a self-aligning manner
Is formed.

Next, a mask made of resist is newly formed. At this time, in order to reduce the off-current value of the switching TFT 903, the mask is a channel formation region of the semiconductor layer forming the switching TFT 903 of the pixel portion 901 and one of the regions. It is formed by covering the part. The mask is also provided to protect the channel formation region of the semiconductor layer forming the p-channel TFT 906 of the driver circuit and the peripheral region thereof. In addition, the mask is formed so as to cover the channel formation region of the semiconductor layer forming the current control TFT 904 of the pixel portion 901 and the peripheral region thereof.

Then, a second doping process is selectively performed using the mask made of the above resist to form an impurity region (n ⁻ region) overlapping with a part of the gate electrode.
The second doping treatment may be performed by an ion doping method or an ion implantation method. Here, an ion doping method is used, a gas in which phosphine (PH ₃ ) is diluted with hydrogen to 5% is used at a flow rate of 30 sccm, and a dose amount is 1.5 × 10 ^14.
The atoms / cm ² are used, and the acceleration voltage is set to 90 keV. In this case, the resist mask and the second conductive layer are n
The mask serves as a mask for the impurity element imparting the mold, and second impurity regions 311 and 312 are formed. An impurity element imparting n-type conductivity is added to the second impurity region in the concentration range of 1 × 10 ¹⁶ to 1 × 10 ¹⁷ / cm ³ . Here, a region having the same concentration range as the second impurity region is also called an n ⁻ region.

Next, a third doping process is performed without removing the resist mask. The third doping treatment may be performed by an ion doping method or an ion implantation method. Phosphorus (P) or arsenic (As) is typically used as the impurity element imparting n-type. Here, the ion doping method is used, and phosphine (PH ₃ ) is 5% with hydrogen.
The flow rate of the diluted gas is 40 sccm, and the dose is 2
The acceleration voltage is set to × 10 ¹⁵ atoms / cm ² and the acceleration voltage is set to 80 keV. In this case, the mask made of resist and the first conductive layer and the second conductive layer serve as a mask for the impurity element imparting n-type, and the third impurity regions 813, 814, 8 are formed.
26-828 are formed. 1 × in the third impurity region
An impurity element imparting n-type is added within a concentration range of 10 ²⁰ to 1 × 10 ²¹ / cm ³ . Here, a region having the same concentration range as the third impurity region is also called an n ⁺ region.

Next, after removing the resist mask, a new resist mask is formed and a fourth doping process is performed. By the fourth doping process,
Fourth impurity regions 818, 819, 832, 833 and fifth impurity regions 816, 817 in which an impurity element imparting p-type conductivity is added to a semiconductor layer forming a semiconductor layer forming a p-channel TFT , 830 and 831 are formed.

The fourth impurity regions 818, 819,
An impurity element imparting p-type conductivity is added to 832 and 833 within a concentration range of 1 × 10 ²⁰ to 1 × 10 ²¹ / cm ³ . The fourth impurity regions 818, 819, 832, 8
Region in the preceding step phosphorus (P) was added to 33 (n ^-
However, the conductivity type is p-type because the concentration of the impurity element imparting p-type is added 1.5 to 3 times that of the region. Here, a region having the same concentration range as the fourth impurity region is also called ap ⁺ region.

Further, the fifth impurity regions 816, 817,
830 and 831 are formed in a region overlapping with the tapered portion of the second conductive layer, and are 1 × 10 ¹⁸ to 1 × 10 ²⁰ / c.
An impurity element imparting p-type is added in the concentration range of m ³ . Here, a region having the same concentration range as the fifth impurity region is also called ap ⁻ region.

Through the above steps, n is added to each semiconductor layer.
An impurity region having a conductivity type of p-type or p-type is formed. The conductive layers 804 to 807 serve as gate electrodes of the TFT.

Next, an insulating film (not shown) is formed to cover almost the entire surface. In this embodiment, a silicon oxide film having a film thickness of 50 nm is formed by the plasma CVD method. Of course, this insulating film is not limited to the silicon oxide film, and another insulating film containing silicon may be used as a single layer or a laminated structure.

Next, a step of activating the impurity element added to each semiconductor layer is performed. This activation step is performed by a rapid thermal annealing method (RTA method) using a lamp light source, a laser irradiation method, a heat treatment using a furnace, or a method combined with any of these methods.

In this embodiment, an example in which the insulating film is formed before the activation is shown, but after the activation is performed,
It may be a step of forming an insulating film.

Next, a step of hydrogenating the semiconductor layer is performed by forming a first interlayer insulating film 808 made of a silicon nitride film and performing heat treatment (heat treatment at 300 to 550 ° C. for 1 to 12 hours). This step is a step of terminating the dangling bond of the semiconductor layer with hydrogen contained in the first interlayer insulating film 808. The semiconductor layer can be hydrogenated regardless of the presence of an insulating film (not shown) made of a silicon oxide film. Plasma hydrogenation (using hydrogen excited by plasma) may be performed as another means of hydrogenation.

Next, a second interlayer insulating film 809a made of an organic insulating material is formed on the first interlayer insulating film 808. In this embodiment, an acrylic resin film 809a having a thickness of 1.6 μm is formed by a coating method.

Next, a contact hole reaching the conductive layer to be the gate electrode or the gate wiring and a contact hole reaching each impurity region are formed. In this embodiment, a plurality of etching processes are sequentially performed. In this embodiment, the second interlayer insulating film is etched using the first interlayer insulating film as an etching stopper, and then the first interlayer insulating film is etched.

After that, electrodes 835 to 841 are formed using Al, Ti, Mo, W, etc., specifically, source wirings, power supply lines, lead electrodes and connection electrodes. Here, the materials for these electrodes and wiring are Ti film (film thickness 1
00 nm) and an Al film containing silicon (film thickness 350 nm)
Patterning was performed using a laminated film of a Ti film (thickness: 50 nm). Thus, the source electrode and the source wiring,
Connection electrodes, lead electrodes, power supply lines, etc. are formed as appropriate. Note that the extraction electrode for making contact with the gate wiring covered with the interlayer insulating film is provided at the end portion of the gate wiring, and the end portions of the other wirings are also connected to an external circuit or an external power source. An input / output terminal portion provided with a plurality of electrodes is formed.

As described above, the n-channel TFT 90
5, a p-channel TFT 906, and a drive circuit 902 having a CMOS circuit in which these are complementarily combined
And n-channel TFT 903 or p in one pixel
A pixel portion 901 including a plurality of channel type TFTs 904 can be formed.

Next, a third interlayer insulating film 809b made of an inorganic insulating material is formed on the second interlayer insulating film 809a. Here, a 200-nm-thick silicon nitride film 809b is formed by a sputtering method.

Next, a contact hole reaching the connection electrode 841 formed in contact with the drain region of the current control TFT 904 composed of a p-channel TFT is formed.
Next, the pixel electrode 8 is formed so as to be in contact with and overlap the connection electrode 841.
34 is formed. In this embodiment, the pixel electrode 834 functions as an anode of the organic light emitting element and is a transparent conductive film in order to allow light emitted from the organic light emitting element to pass through the pixel electrode and the substrate.

Next, an inorganic insulator 842 is formed on both ends so as to cover the end portion of the pixel electrode 834. 842 may be formed of an insulating film containing silicon by a sputtering method and patterned. Further, instead of the inorganic insulator 842, a bank made of an organic insulator may be formed.

Next, the EL layer 843 and the cathode 844 of the organic light emitting element are formed on the pixel electrode 834 whose both ends are covered with the inorganic insulator 842. The EL layer 843 may be formed by an inkjet method, an evaporation method, a spin coating method, or the like.

As the EL layer 843, an EL layer (a layer for emitting light and moving carriers therefor) may be formed by freely combining a light emitting layer, a charge transporting layer, or a charge injecting layer. For example, a low molecular weight organic EL material or a high molecular weight organic EL material may be used. Further, as the EL layer, a thin film formed of a light emitting material (singlet compound) that emits light (fluorescence) by singlet excitation or a thin film formed of a light emitting material (triplet compound) that emits light (phosphorescence) by triplet excitation can be used. Further, it is also possible to use an inorganic material such as silicon carbide for the charge transport layer and the charge injection layer. Known materials can be used as these organic EL materials and inorganic materials.

As the material used for the cathode 844, it is preferable to use a metal having a small work function (typically a metal element belonging to Group 1 or 2 of the periodic table) or an alloy containing these. . Since the smaller the work function is, the higher the luminous efficiency is, the alloy material containing Li (lithium), which is one of the alkali metals, is preferable as the material used for the cathode.

Next, a protective film 846 covering the cathode 844 is formed. As the protective film 846, an insulating film containing silicon nitride or silicon oxynitride as a main component may be formed by a sputtering method. In order to reduce the film stress of the protective film 846,
It is preferable to provide the buffer layer 845. Protective film 84
6 prevents the entry of substances such as water and oxygen that promote deterioration due to oxidation of the EL layer from the outside. Buffer layer 84
As 5, an insulating film containing silicon oxide or silicon oxynitride as a main component may be formed by a sputtering method, and the protective film can be prevented from being mixed with impurities from 844 during film formation. However, a protective film may not be provided on the input / output terminal portion that needs to be connected to the FPC later.

FIG. 6 shows the stage in which the steps up to this point are completed. In FIG. 6, the switching TFT 903 and the TFT (current control TFT) that supplies a current to the organic light emitting element.
904), various circuits including a plurality of TFTs may be provided at the tip of the gate electrode of the TFT,
It goes without saying that there is no particular limitation.

Then, the organic light emitting element having at least the cathode, the organic compound layer and the anode is sealed with a sealing substrate or a sealing can to completely shield the organic light emitting element from the outside and to prevent moisture from the outside. It is preferable to prevent entry of a substance that promotes deterioration of the EL layer due to oxidation, such as oxygen or oxygen.

Next, an FPC (flexible printed circuit) is attached to each electrode of the input / output terminal portion with an anisotropic conductive material. The anisotropic conductive material is composed of resin and conductive particles having a diameter of several tens to several hundreds of μm whose surface is plated with Au or the like. The conductive particles are formed on each electrode of the input / output terminal and the FPC. The wiring is electrically connected.

A color filter 421 corresponding to each pixel is provided on the substrate 400. The provision of the color filter 421 eliminates the need for the circularly polarizing plate. Further, if necessary, another optical film may be provided.
Also, an IC chip or the like may be mounted.

Through the above steps, the module type light emitting device to which the FPC is connected is completed.

In addition, this embodiment can be freely combined with Embodiment Mode 1 or Embodiment Mode 2.

[Embodiment 2] A top view and a sectional view of a module type light emitting device (also called an EL module) obtained in Embodiment 1 are shown.

FIG. 7A is a top view showing the EL module, and FIG. 7B is a sectional view taken along the line AA ′ in FIG. 7A. In FIG. 7A, a substrate 400 (for example,
A base insulating film 401 is provided on heat resistant glass or the like), and a pixel portion 402, a source side driver circuit 404, and a gate side driver circuit 403 are formed thereover. These pixel portion and driving circuit can be obtained according to the first embodiment.

Reference numeral 419 is a protective film, and the pixel portion and the driving circuit portion are covered with the protective film 419. Further, the cover member 420 is sealed with an adhesive. Cover material 42
0 is a sealing substrate (glass substrate, plastic substrate, etc.)
And an inert gas may be filled in the gap between the EL layer and the cover material. The cover material 420 may be provided with a desiccant such as a double-sided tape.

Reference numeral 408 denotes a wiring for transmitting a signal input to the source side driving circuit 404 and the gate side driving circuit 403, and a video signal or a clock signal from an FPC (flexible printed circuit) 409 which is an external input terminal. To receive. Although only the FPC is shown here, a printed wiring board (P
WB) may be attached. The light emitting device in this specification includes not only the light emitting device main body but also the FPC.
Alternatively, the state in which the PWB is attached is also included.

Next, the sectional structure will be described with reference to FIG. A base insulating film 401 is provided in contact with the substrate 400, and a pixel portion 402 and a gate side driver circuit 403 are formed above the insulating film 401. The pixel portion 402 electrically connects a current control TFT 411 and a drain thereof. It is formed by a plurality of pixels including the pixel electrode 412 connected to. Further, the gate side drive circuit 403 is an n-channel TF.
It is formed using a CMOS circuit in which T413 and a p-channel TFT 414 are combined.

These TFTs (411, 413, 414)
Are included) according to the n-channel TFT of the first embodiment and the p-channel TFT of the first embodiment. In FIG. 7, a TFT that supplies a current to the organic light emitting element
Only the (current control TFT 411) is shown, but the TFT
Needless to say, various circuits including a plurality of TFTs may be provided at the tip of the gate electrode, and are not particularly limited.

Note that the pixel portion 402, the source side driver circuit 404, and the gate side driver circuit 403 are formed over the same substrate in accordance with Embodiment 1.

The pixel electrode 412 is an organic light emitting element (OLE).
It functions as the cathode of D). In addition, an inorganic insulator 415 is formed on both ends of the pixel electrode 412, and an organic compound layer 416 and an anode 417 of the light emitting element are formed on the pixel electrode 412.

As the organic compound layer 416, a light emitting layer, a charge transport layer or a charge injection layer may be freely combined to form an organic compound layer (a layer for causing light emission and carrier movement for that purpose).

The anode 417 also functions as a wiring common to all pixels, and is electrically connected to the FPC 409 via the connection wiring 408. Further, all the elements included in the pixel portion 402 and the gate side driver circuit 403 are covered with the protective film 419.

A protective film may be provided on the entire surface of the substrate 400 including the back surface. Here, it is necessary to take care so that the protective film is not formed on the portion where the external input terminal (FPC) is provided. The protective film may be prevented from being formed by using a mask, or the external input terminal portion may be covered with a tape such as Teflon (registered trademark) used as a masking tape in the CVD device so that the protective film is not formed. Good. As the protective film 419, a silicon nitride film, DLC
A film or an AlN _X O _Y film may be used.

With the structure as described above, the light emitting element is protected by the protective film 41.
By enclosing the light emitting element with 9, it is possible to completely shield the light emitting element from the outside, and it is possible to prevent intrusion of a substance such as moisture or oxygen, which promotes deterioration due to oxidation of the organic compound layer, from the outside. Therefore, a highly reliable light emitting device can be obtained. Further, the steps from film formation of the EL layer to encapsulation may be performed using the apparatus shown in FIG.

Further, the pixel electrode may be used as an anode, and the organic compound layer and the cathode may be laminated to emit light in the direction opposite to that shown in FIG. FIG. 8 shows an example thereof. Since the top view is the same, it is omitted.

The sectional structure shown in FIG. 8 will be described below. An insulating film 610 is provided over the substrate 600, and the pixel portion 602 and the gate side driver circuit 60 are provided above the insulating film 610.
3 is formed, and the pixel portion 602 is a current control TFT.
611 and the pixel electrode 6 electrically connected to its drain
It is formed by a plurality of pixels including 12. The gate side driver circuit 603 is formed using a CMOS circuit in which an n-channel TFT 613 and a p-channel TFT 614 are combined.

These TFTs (611, 613, 614)
Are included) according to the n-channel TFT of the first embodiment and the p-channel TFT of the fifth embodiment. In addition, in FIG.
Only the FT (current control TFT 611) is shown.
Needless to say, various circuits including a plurality of TFTs may be provided in front of the gate electrode of the FT and are not particularly limited.

The pixel electrode 612 is an organic light emitting element (OLE).
It functions as the anode of D). In addition, an inorganic insulator 615 is formed on both ends of the pixel electrode 612, and an organic compound layer 616 and a cathode 617 of the light emitting element are formed on the pixel electrode 612.

The cathode 617 also functions as a wiring common to all pixels, and is electrically connected to the FPC 609 via the connection wiring 608. Further, all elements included in the pixel portion 602 and the gate side driver circuit 603 are covered with the protective film 619. Although not shown here, it is preferable to provide a buffer layer before forming the protective film 619 as shown in Embodiment Mode 2. Here, a silicon oxide film serving as a buffer layer and a silicon nitride film serving as a protective film are sequentially formed over the cathode 617 formed of a transparent conductive film by a sputtering method.

Further, the cover material 620 is attached with an adhesive. Further, the cover material 620 is provided with a color filter 621 corresponding to each pixel as described in Embodiment Mode 1 in order to increase color purity. By providing this color filter 621, it becomes unnecessary to provide a circularly polarizing plate. Further, the cover material 620 may be provided with a desiccant.

Further, in FIG. 8, since the pixel electrode serves as an anode and the organic compound layer and the cathode are laminated, the light emitting direction is the direction of the arrow shown in FIG.

Although the top gate type TFT has been described as an example here, the present invention can be applied regardless of the TFT structure. For example, a bottom gate type (inverse stagger type) TFT or a forward stagger type TFT can be applied. It is possible to apply.

Further, this embodiment can be freely combined with any one of Embodiment Modes 1, 2 and 1.

[Embodiment 3] An EL module (active matrix EL module, passive EL module) can be completed by carrying out the present invention. That is,
By carrying out the present invention, all electronic devices incorporating them are completed.

As such electronic equipment, video cameras, digital cameras, head mounted displays (goggles type displays), car navigations, car stereos, personal computers, personal digital assistants (mobile computers, mobile phones, electronic books, etc.), etc. Is mentioned. Examples of these are shown in FIGS. 9 and 10.

FIG. 9A shows a personal computer, which has a main body 2001, an image input section 2002, and a display section 200.
3, keyboard 2004 and the like.

FIG. 9B shows a video camera, which is a main body 2
101, display unit 2102, voice input unit 2103, operation switch 2104, battery 2105, image receiving unit 2106
Including etc.

FIG. 9C shows a mobile computer (mobile computer), which includes a main body 2201 and a camera section 2.
202, an image receiving unit 2203, operation switches 2204, a display unit 2205 and the like.

FIG. 9D shows a goggle type display, which includes a main body 2301, a display portion 2302 and an arm portion 2303.
Including etc.

FIG. 9E shows a player that uses a recording medium (hereinafter, referred to as a recording medium) in which a program is recorded.
3, a recording medium 2404, operation switches 2405 and the like. This player uses a DVD (D
optical Versatile Disc), CD
It is possible to play music, watch movies, play games, and use the internet.

FIG. 9F shows a digital camera, which includes a main body 2501, a display portion 2502, an eyepiece portion 2503, operation switches 2504, an image receiving portion (not shown) and the like.

FIG. 10A shows a mobile phone, which is a main body 29.
01, voice output unit 2902, voice input unit 2903, display unit 2904, operation switch 2905, antenna 290
6. Image input unit (CCD, image sensor, etc.) 2907
Including etc.

FIG. 10B shows a portable book (electronic book) including a main body 3001, display portions 3002 and 3003, a storage medium 3004, operation switches 3005, an antenna 3006.
Including etc.

FIG. 10C shows a display, which includes a main body 3101, a support base 3102, a display portion 3103 and the like.

By the way, the display shown in FIG. 10C is a medium-sized or large-sized display, for example, a screen size of 5 to 20 inches. Further, in order to form a display portion having such a size, it is preferable to use a substrate whose one side is 1 m and perform multi-chambering for mass production.

As described above, the applicable range of the present invention is extremely wide, and the present invention can be applied to electronic device manufacturing methods in all fields. In addition, the electronic device of the present embodiment can be realized by using a configuration including any combination of the first embodiment, the second embodiment, the first embodiment, or the second embodiment.

[0185]

According to the present invention, since a very expensive circularly polarizing film can be dispensed with, the manufacturing cost can be reduced.

Further, according to the present invention, high definition, high aperture ratio and high reliability can be realized as a full color flat panel display using red, green and blue emission colors.

[Brief description of drawings]

1A and 1B are a top view and a cross-sectional view of a pixel (3 × 3).

FIG. 2 is a graph showing the relationship between luminance and voltage.

3A and 3B are a top view and a cross-sectional view of a pixel (3 × 3).

FIG. 4 is a diagram showing a manufacturing apparatus of the present invention. (Embodiment 2)

FIG. 5 is a diagram showing a laminated structure of the present invention. (Embodiment 2)

FIG. 6 illustrates a structure of an active matrix EL display device.

FIG. 7 illustrates a structure of an active matrix EL display device.

FIG. 8 is a diagram showing a configuration of an active matrix EL display device.

FIG. 9 illustrates an example of an electronic device.

FIG. 10 illustrates examples of electronic devices.

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 3K007 AB02 AB04 AB11 AB17 AB18                       BA06 BB01 BB05 BB06 CB01                       DB03 FA01 FA02 FA03

Claims (18)

[Claims] 1. A cathode and an organic compound layer in contact with the cathode,
A light emitting device having a plurality of light emitting elements each having an anode in contact with the organic compound layer, wherein one light emitting element comprises a cathode, an organic compound layer in contact with the cathode, and an anode in contact with the organic compound layer. A second light emitting region including a first light emitting region, a cathode, a stack of organic compound layers in contact with the cathode, and an anode in contact with the stack of organic compound layers. A light emitting device characterized by. 2. The stack of organic compounds according to claim 1, wherein the organic compound layer in the first light emitting region and the organic compound layer of a light emitting element adjacent to the one light emitting element and having a different emission color are stacked. The light emitting device according to claim 1. 3. A cathode and an organic compound layer in contact with the cathode,
A light emitting device having a plurality of light emitting elements having an anode in contact with the organic compound layer, the first light emitting element having a first organic compound layer, and the second light emitting element having a second organic compound layer. A third light emitting element having a third organic compound layer is arranged, and in the first light emitting element, the first organic compound layer and the second organic compound layer partially overlap with each other. A light-emitting device characterized by being. 4. A cathode and an organic compound layer in contact with the cathode,
A light emitting device having a plurality of light emitting elements having an anode in contact with the organic compound layer, the first light emitting element having a first organic compound layer, and the second light emitting element having a second organic compound layer. A third light emitting element having a third organic compound layer is arranged, and in the first light emitting element, the first organic compound layer and the second organic compound layer partially overlap with each other. In addition, in the second light emitting element, the second organic compound layer and the third organic compound layer are partially overlapped with each other. 5. The light emitting device according to claim 3 or 4, wherein the first light emitting element emits any one color of red, green, and blue. 6. The light emitting device according to claim 3, wherein the first light emitting device, the second light emitting device, and the third light emitting device.
The light emitting element of the above emits different colors. 7. The light emitting device according to claim 1, wherein the light emitting device has a color filter corresponding to each pixel. 8. A cathode and an organic compound layer in contact with the cathode,
A light emitting device having a plurality of light emitting elements having an anode in contact with the organic compound layer, wherein the anode made of a transparent conductive film is covered with a stack of a buffer layer and a protective film. . 9. The light emitting device according to claim 8, wherein the buffer layer is an insulating film containing silicon oxide or silicon oxynitride as a main component. 10. The light emitting device according to claim 8 or 9, wherein the protective film is an insulating film containing silicon nitride as a main component. 11. The light emitting device according to claim 1, wherein the light emitting device is a video camera, a digital camera,
A light emitting device, which is a goggle type display, a car navigation, a personal computer or a personal digital assistant. 12. A method for manufacturing a light-emitting device having a plurality of light-emitting elements having a cathode, an organic compound layer in contact with the cathode, and an anode in contact with the organic compound layer, the anode comprising a transparent conductive film in the same chamber. And forming a buffer layer covering the anode, and then forming a protective film on the buffer layer in different chambers. 13. The method for manufacturing a light emitting device according to claim 12, wherein the buffer layer is an insulating film formed by a sputtering method and containing silicon oxide or silicon oxynitride as a main component. 14. The method according to claim 12 or 13,
The method for manufacturing a light-emitting device, wherein the protective film is an insulating film containing silicon nitride as a main component, which is formed by a sputtering method. 15. A load chamber, a first connected to the load chamber
Transport chamber, an organic compound layer film formation chamber connected to the first transport chamber, a second transport chamber coupled to the first transport chamber, and a second transport chamber coupled to the first transport chamber. A metal layer forming chamber, a transparent conductive film forming chamber, a protective film forming chamber, a third transfer chamber connected to the second transfer chamber, and a third transfer chamber. And a sealed substrate loading chamber and a sealed chamber. 16. The film forming chamber for the transparent conductive film according to claim 15, wherein a plurality of targets are provided, and at least a target made of a transparent conductive material and a target made of silicon are provided. Characteristic manufacturing equipment. 17. The manufacturing apparatus according to claim 15, wherein the film forming chamber for the transparent conductive film is provided with a device for forming a film by a remote plasma method. 18. The manufacturing apparatus according to claim 15, wherein a substrate to which a desiccant is attached is installed in the sealed substrate loading chamber.