JP2003288983A - Light emitting device, method for preparing and manufacturing the device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device having a high precision, a large numerical aperture, and high reliability. <P>SOLUTION: Organic compound layers each taken from light emitting elements intentionally made adjacent to each other are partially laminated so as to form laminated layers 21 and 22 and provide a full-color flat panel display using luminescence colors of red, green and blue having an improved precision and a large numerical aperture. Moreover, a protective film 32a including hydrogen is provided so as to terminate defects of an organic compound layer with the hydrogen, and improve luminance and reliability. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device,
In particular, the present invention relates to a light emitting device having a light emitting element formed over a substrate having an insulating surface and a manufacturing method thereof. The present invention also relates to a light emitting module in which an IC including a controller is mounted on a light emitting panel. In this specification, the light emitting panel and the light emitting module are collectively referred to as a light emitting device. The invention further relates to an apparatus for manufacturing the light emitting device.

[0002] In this specification, a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and a light-emitting device, an electro-optical device, a semiconductor circuit, and an electronic device are all semiconductor devices.

[0003]

2. Description of the Related Art In recent years, a technique for forming a TFT (thin film transistor) on a substrate has made great progress, and its application and development to an active matrix type display device has been advanced. In particular,
Since a TFT using a polysilicon film has a higher field effect mobility (also referred to as mobility) than a conventional TFT using an amorphous silicon film, high speed operation is possible.
Therefore, a drive circuit including a TFT using a polysilicon film is provided on the same substrate as the pixel, and development for controlling each pixel is actively performed. An active matrix type display device in which pixels and a drive circuit are incorporated on the same substrate is expected to obtain various advantages such as reduction in manufacturing cost, downsizing of display device, increase in yield, and improvement in throughput.

In addition, active matrix light emitting devices (hereinafter also simply referred to as light emitting devices) having EL elements as self-emissive elements have been actively researched.

In the active matrix type light emitting device, a switching element (hereinafter
A switching element) is provided, and a driving element (hereinafter referred to as a current control TFT) that controls a current by the switching TFT is operated to cause the EL layer (strictly speaking, a light emitting layer) to emit light. For example, the light emitting device described in Patent Document 1 is known.

Since the EL element emits light by itself, it has high visibility, does not require a backlight required in a liquid crystal display (LCD), is optimal for thinning, and has no limitation in viewing angle. Therefore, a light-emitting device using an EL element is drawing attention as a display device which replaces a CRT or LCD.

The EL element has a layer (hereinafter referred to as an EL layer) containing an organic compound that can obtain luminescence (Electro Luminescence) generated by applying an electric field, an anode, and a cathode. Luminescence in an organic compound includes light emission when returning from a singlet excited state to a ground state (fluorescence) and light emission when returning from a triplet excited state to a ground state (phosphorescence). The light emitting device manufactured by the film forming method can be applied regardless of which light emission is used.

An EL element has a structure in which an EL layer is sandwiched between a pair of electrodes, but the EL layer usually has a laminated structure. Typically, a laminated structure of "hole transport layer / light emitting layer / electron transport layer" can be mentioned. This structure has a very high luminous efficiency, and most of the light-emitting devices currently being researched and developed employ this structure.

In addition, a hole injection layer / hole transport layer / light emitting layer / electron transport layer, or hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer may be formed on the anode. A structure in which they are laminated in order is also preferable. You may dope a fluorescent dye etc. with respect to a light emitting layer. Further, all of these layers may be formed by using a low molecular weight material or may be formed by using a high molecular weight material.

[0010]

[Patent Document 1] Japanese Patent Laid-Open No. 10-189252

[0011]

The organic compound material forming the EL layer (strictly speaking, the light emitting layer), which can be said to be the center of the EL element, is a low molecular organic compound material or a high molecular compound (polymer).
Organic compound materials have been studied respectively.

The film forming method of these organic compound materials includes
Methods such as an inkjet method, a vapor deposition method, and a spin coating method are known.

However, when considering the production of a full-color flat panel display using red, green, and blue emission colors, the film forming accuracy is not so high, so that the intervals between different pixels are designed to be wide, An insulator called a bank is provided between the pixels.

In addition, as a full-color flat panel display using red, green and blue emission colors, there is an increasing demand for higher definition, higher aperture ratio and higher reliability. Such a demand has become a major issue in advancing the definition of the light emitting device (increase in the number of pixels) and miniaturization of each display pixel pitch accompanying miniaturization. At the same time, demands for improved productivity and cost reduction are also increasing.

In addition, the present invention aims to increase the reliability and brightness of the light emitting device.

[0016]

SUMMARY OF THE INVENTION The present invention intentionally overlaps different organic compound layers of adjacent light emitting elements with each other so that the red, As a full-color flat panel display using green and blue emission colors, it realizes high definition and high aperture ratio.

However, an inorganic insulating film is provided between the pixel electrode and a portion where different organic compound layers partially overlap, and the inorganic insulating film covers both end portions of each pixel electrode and between them. There is. Even if another organic compound layer partially overlaps the organic compound layer that is in contact with the pixel electrode, the emission luminance is reduced to about 1/1000 and the flowing current is also reduced to about 1/1000. no problem.

Structure 1 of the invention disclosed in the present specification is a light emitting device having a plurality of light emitting elements each having a cathode, an organic compound layer in contact with the cathode, and an anode in contact with the organic compound layer. A first light emitting element having an organic compound layer, a second light emitting element having a second organic compound layer, and a third light emitting element having a third organic compound layer are arranged. An insulator covering an end portion of the first organic compound layer, the second organic compound layer, or the third organic compound layer is provided on the insulator and the anode. It is a characteristic light emitting device.

A second aspect of the invention disclosed in the present specification is a light emitting device having a plurality of light emitting elements each having a cathode, an organic compound layer in contact with the cathode, and an anode in contact with the organic compound layer. A first light emitting element having an organic compound layer, a second light emitting element having a second organic compound layer, and a third light emitting element having a third organic compound layer are arranged. An insulator covering an end portion of the first organic compound layer, the second organic compound layer, or the third organic compound layer is provided on the insulator and the cathode. It is a characteristic light emitting device.

Further, the active matrix type light emitting device may have two structures in the light emitting direction. One is a structure in which light emitted from an EL element passes through a counter substrate and is emitted to enter the eyes of an observer. In this case, the observer can recognize the image from the counter substrate side. The other is a structure in which the light emitted from the EL element passes through the element substrate and is emitted to enter the eyes of the observer. In this case, the observer can recognize the image from the element substrate side.

Further, in each of the above structures, the insulator is a barrier (also called a bank) made of an inorganic insulating film or an organic resin covered with the inorganic insulating film. The inorganic insulating film has a thickness of 10 to 10
It is characterized in that it is an insulating film mainly composed of 0 nm silicon nitride. Alternatively, a film containing hydrogen, typically a thin film containing carbon as a main component, or a silicon nitride film may be used as an insulator covering the end portion of the cathode or the anode.

In addition, it is extremely useful to use a transparent conductive film (typically ITO or ZnO) as the anode and form a protective film made of an inorganic insulating film on it.

Further, before forming a protective film made of an inorganic insulating film, a film containing hydrogen (typically a thin film containing carbon as a main component (DLC) is formed by a plasma CVD method or a sputtering method.
Film), a silicon nitride film, a silicon oxynitride film, a silicon oxide film, or a laminated film thereof) is preferably formed. Also,
A silicon nitride film serving as a protective film is preferably formed so as to cover the film containing hydrogen.

Further, in each of the above constitutions, the first light emitting element emits any one of red, green and blue. Further, the first light emitting element, the second light emitting element, and the third light emitting element emit different colors.

In addition, in each of the above-mentioned constitutions, it is preferable to seal the entire light emitting element by using a sealing substrate such as a glass substrate or a plastic substrate.

In the light emitting device, external light (light outside the light emitting device) that has entered the pixels that do not emit light is reflected by the back surface of the cathode (the surface in contact with the light emitting layer), and the back surface of the cathode is a mirror. There was a problem that the outside scene was reflected on the observation surface (the surface facing the observer). In addition, in order to avoid this problem, a circular polarization film is attached to the observation surface of the light emitting device so that the outside scenery is not reflected on the observation surface, but the circular polarization film is very expensive. Therefore, there is a problem that the manufacturing cost is increased.

Another object of the present invention is to prevent the light emitting device from being mirror-finished without using a circularly polarizing film, and to reduce the manufacturing cost of the light emitting device and to provide an inexpensive light emitting device. Therefore, the present invention is characterized by using an inexpensive color filter instead of the circularly polarizing film. In the above structure, in order to improve color purity, it is preferable that the light emitting device includes a color filter corresponding to each pixel. Further, the black portion (black organic resin) of the color filter may be overlapped between the light emitting regions. Further, the black portion (black colored layer) of the color filter may overlap with a portion where different organic compound layers partially overlap.

However, a color filter is provided in the emission direction of the emitted light, that is, between the light emitting element and the observer. For example,
When the light-emitting element is not passed through the substrate, the color filter may be attached to the sealing substrate. Alternatively, in the case of passing through a substrate provided with a light emitting element, a color filter may be attached to the substrate provided with the light emitting element. This eliminates the need for circularly polarized film.

Further, the biggest problem in putting the EL element into practical use is that the life of the element is insufficient. In addition, the deterioration of the element appears in the form that the non-light emitting area (dark spot) spreads as the light is emitted for a long time.
Degradation of the L layer has become a major issue.

In order to solve this problem, the present invention is characterized in that plasma is generated in an atmosphere containing hydrogen to terminate defects in the organic compound layer with hydrogen. Another structure 3 of the present invention has a light emitting element on a substrate having an insulating surface, and the light emitting element has an anode, a cathode, and an organic compound layer sandwiched between the anode and the cathode. The light emitting device is a light emitting device characterized by being covered with a film containing hydrogen.

By subjecting the organic compound layer to heat treatment in a temperature range that can withstand it or utilizing the heat generated when the light-emitting element emits light, hydrogen is diffused from the hydrogen-containing film and the organic compound layer Defects can be terminated with hydrogen. When the defects in the organic compound layer, typically the dangling bonds are terminated with hydrogen, the reliability of the light emitting device is improved. Further, when the film containing hydrogen is formed, the hydrogen in the organic compound layer may be terminated with hydrogen by diffusing or injecting hydrogen which is turned into plasma. By doing so, it is possible to reduce unstable bonds existing in the organic compound layer or generated due to some reason (heat generation during light emission, light irradiation, temperature change, etc.). Therefore, it is possible to improve the reliability and brightness of the light emitting element. In addition, the protective film formed over the film containing hydrogen has a function of blocking hydrogen which diffuses to the protective film side, efficiently diffusing hydrogen into the organic compound layer, and terminating defects in the organic compound layer with hydrogen. Also fulfills. Further, since hydrogen is diffused by passing through the cathode or the anode formed on the organic compound layer, it is preferable to reduce the thickness of the cathode or the anode. However, the cathode or the anode formed on the organic compound layer is protected so as not to damage the organic compound layer when the film containing hydrogen is formed. Further, the film containing hydrogen can also function as a protective film of a light-emitting element.

Further, the film containing hydrogen can be made to function as a buffer layer, and when the silicon nitride film is formed in contact with the film made of the transparent conductive film by the sputtering method, impurities (In, Sn, Zn, etc.) may be mixed in the silicon nitride film, but it is possible to prevent impurities from being mixed in the silicon nitride film by forming the film containing hydrogen serving as a buffer layer therebetween. By forming the buffer layer with the above structure, it is possible to prevent impurities (In, Sn, etc.) from entering from the transparent conductive film and form an excellent protective film without impurities.

A manufacturing method for realizing the above structure is also one aspect of the present invention. In the structure relating to the manufacturing method of the present invention, a TFT is formed on an insulating surface and a cathode electrically connected to the TFT is formed. A method for manufacturing a light-emitting device, which comprises forming an organic compound layer on the cathode, forming an anode on the organic compound layer, and then forming a film containing hydrogen on the anode. .

Another structure relating to the manufacturing method of the present invention is that a TFT is formed on an insulating surface, an anode electrically connected to the TFT is formed, and an organic compound layer is formed on the anode. A method of manufacturing a light emitting device, comprising forming a cathode on the organic compound layer and then forming a film containing hydrogen on the cathode.

Further, in each of the above-described structures relating to the manufacturing method of the present invention, the film containing hydrogen is formed by a plasma CVD method or a sputtering method in a temperature range that the organic compound layer can withstand, for example, room temperature to 100 ° C. or lower. It is characterized in that the film containing hydrogen is a thin film containing carbon as a main component or a silicon nitride film.

Further, in each of the above-mentioned structures relating to the manufacturing method of the present invention, the step of forming the organic compound layer is performed by a vapor deposition method, a coating method, an ion plating method or an inkjet method.

Further, in each of the above-described structures relating to the manufacturing method of the present invention, a protective film made of an inorganic insulating film is formed on the film containing hydrogen.

Further, in each of the above structures relating to the manufacturing method of the present invention, when the film containing hydrogen is formed, the defects in the organic compound layer are terminated with hydrogen.

In order to prevent deterioration due to moisture and oxygen,
When the light emitting element is sealed with a sealing can or a sealing substrate, the sealed space may be filled with hydrogen gas or hydrogen and an inert gas (rare gas or nitrogen).

In the above manufacturing method, the defects in the organic compound layer are terminated with hydrogen when the film is formed, but the invention is not particularly limited, and only the hydrogen plasma treatment is performed without forming the film. Good.

Another structure relating to the manufacturing method of the present invention is a method for manufacturing a light emitting device having a plurality of light emitting elements each having an anode, an organic compound layer in contact with the anode, and a cathode in contact with the organic compound layer. A first step of forming an organic compound layer on the anode, and a second step of performing plasma treatment in an atmosphere containing hydrogen to terminate defects in the organic compound layer with hydrogen after forming the organic compound layer. And a third step of forming a cathode on the organic compound layer, the method for manufacturing a light emitting device.

Further, the hydrogen plasma treatment may be carried out immediately after the organic compound layer is formed, and the other structure relating to the production method of the present invention is that the anode, the organic compound layer in contact with the anode, and the organic compound layer. In a method for manufacturing a light emitting device having a plurality of light emitting elements each having a cathode in contact with the cathode, a first step of forming an organic compound layer on the anode, a second step of forming a cathode on the organic compound layer, and the cathode And a third step of performing plasma treatment in an atmosphere containing hydrogen to terminate defects in the organic compound layer with hydrogen after the formation of.

Another structure relating to the manufacturing method of the present invention is a manufacturing method of a light emitting device having a plurality of light emitting elements each having a cathode, an organic compound layer in contact with the cathode, and an anode in contact with the organic compound layer. In, a first step of forming an organic compound layer on the cathode, a second step of forming an anode on the organic compound layer, and after forming the anode, plasma is generated in an atmosphere containing hydrogen to form the organic compound. And a third step of terminating defects in the layer with hydrogen, the method for manufacturing a light emitting device.

Further, the hydrogen plasma treatment may be carried out immediately after the organic compound layer is formed. Another constitution relating to the production method of the present invention is that the cathode, the organic compound layer in contact with the cathode, and the organic compound layer. In a method for manufacturing a light-emitting device having a plurality of light-emitting elements each having an anode in contact therewith, a first step of forming an organic compound layer on a cathode, and plasma is generated in an atmosphere containing hydrogen after forming the organic compound layer. And a third step of forming a positive electrode on the organic compound layer, and a second step of terminating defects in the organic compound layer with hydrogen, and a third step of forming an anode on the organic compound layer.

In the present specification, all layers provided between the cathode and the anode are generically called EL layers. Therefore, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer described above are all included in the EL layer.

In the present invention, the carbon-based thin film is a DLC film (Diamond like Car) having a thickness of 3 to 50 nm.
bon). The DLC film has an SP ³ bond as a carbon-carbon bond in a short-range order, but has a macroscopic amorphous structure. The composition of the DLC film is 70 to 95 atom% of carbon and 5 to 30 atom% of hydrogen, which is extremely hard and excellent in insulating property. Such a DLC film is also characterized by a low gas permeability of water vapor and oxygen. It is also known to have a hardness of 15 to 25 GPa as measured by a micro hardness meter.

The DLC film can be formed by a plasma CVD method (typically, an RF plasma CVD method, a microwave CVD method, an electron cyclotron resonance (ECR) CVD method, etc.), a sputtering method or the like. Whichever film forming method is used, the DLC film can be formed with good adhesion. The DLC film is formed by placing the substrate on the cathode. Alternatively, by applying a negative bias and utilizing ion bombardment to some extent, a dense and hard film can be formed.

The reaction gas used for film formation is hydrogen gas and hydrocarbon-based gas (for example, CH ₄ , C ₂ H ₂ , C ₆ H _6, etc.).
And are ionized by glow discharge, and the ions are accelerated and collided with the negatively biased cathode to form a film. By doing so, a dense and smooth DLC film can be obtained.

The DLC film is characterized in that it is made of an insulating film which is transparent or semitransparent to visible light.

Further, in the present specification, “transparent to visible light” means that the transmittance of visible light is 80 to 100%, and “translucent to visible light” means that the transmittance of visible light is 50%.
-80%.

The present invention also provides a manufacturing apparatus capable of manufacturing a highly reliable light emitting device.

Another structure of the present invention relates to a manufacturing apparatus, which includes a load chamber, a first transfer chamber connected to the load chamber, and a pretreatment chamber connected to the first transfer chamber. A second transfer chamber connected to the first transfer chamber, and the second transfer chamber
A film formation chamber for a plurality of organic compound layers connected to the transfer chamber of
Plasma is generated in a third transfer chamber connected to the second transfer chamber, a metal layer deposition chamber connected to the third transfer chamber, a transparent conductive film deposition chamber, and an atmosphere containing hydrogen. A processing chamber provided with a means for causing a protective film to be formed, a fourth transfer chamber connected to the third transfer chamber, a dispenser chamber connected to the fourth transfer chamber, and a sealing substrate. A manufacturing apparatus having a load chamber and a sealing chamber.

In the structure relating to the above manufacturing apparatus, the pretreatment chamber is characterized by having a vacuum exhaust means, a heating means, and a plasma generating means.

Further, in the structure relating to the above-mentioned manufacturing apparatus, a device for forming an organic compound layer made of a polymer material is connected to the first transfer chamber, and is made of the polymer material. An apparatus for forming an organic compound layer is an apparatus for forming a film by a spin coating method, a spray method, an ion plating method, or an inkjet method.

Further, in the structure relating to the above-mentioned manufacturing apparatus, the processing chamber provided with the means for generating plasma in the atmosphere containing hydrogen is a film forming apparatus for forming a silicon nitride film or a film containing carbon as a main component. I am trying.

Further, in the structure relating to the above manufacturing apparatus, the film forming chamber for a plurality of organic compound layers connected to the second transfer chamber has a vapor deposition source.

By using the manufacturing apparatus having the above structure, a light emitting device in which an EL element is covered with a film containing hydrogen or a protective film can be manufactured with high throughput.

[0058]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below.

(Embodiment 1) FIG. 2 is a top view of an EL module. Substrate with a myriad of TFTs (TF
Also referred to as a T substrate), a pixel portion 40 for displaying,
Driving circuits 41a and 41b for driving each pixel of the pixel portion
And a connecting portion 43 for connecting the electrode provided on the EL layer and the lead-out wiring, and a terminal portion 42 for attaching an FPC for connecting with an external circuit. Also, EL
A substrate for sealing the element and a sealing material 33 are used for sealing. In addition, FIG. 1A shows a chain line A in FIG.
It is sectional drawing at the time of cutting in -A '.

Pixels are regularly arranged in the direction of the chain line AA ', and here, an example is shown in which the pixels are arranged in the order of R, G, B in the X direction. In the present invention, as shown in FIG. 1A, an EL layer 17 that emits red light and an EL layer 18 that emits green light are partially overlapped to form a laminated portion 21. Further, the EL layer 18 that emits green light and the EL layer 19 that emits blue light are partially overlapped with each other to form a laminated portion 22.

Since the EL layers may be partially overlapped with each other in this manner, the method for forming the organic compound layer (inkjet method, vapor deposition method, spin coating method, etc.) and the film forming precision thereof may vary. Instead, as a full-color flat panel display using red, green, and blue emission colors, high definition and high aperture ratio can be realized.

In FIG. 1 (A), the light emitting region (R) shows a red light emitting region, the light emitting region (G) shows a green light emitting region, and the light emitting region (B) shows a blue light emitting region. The light emitting area is shown, and a full color light emitting display device is realized by these three color light emitting areas.

In FIG. 1A, the TFT 1 is an element for controlling the current flowing through the EL layer 17 which emits red light, and 4 and 7 are source electrodes or drain electrodes. The TFT 2 is an element that controls the current flowing in the EL layer 18 that emits green light, and 5 and 8 are source electrodes or drain electrodes. The TFT 3 is an element that controls a current flowing in the EL layer 19 that emits blue light, and 6 and 9 are source electrodes or drain electrodes. Reference numerals 15 and 16 are interlayer insulating films made of an organic insulating material or an inorganic insulating film material.

Further, 11 to 13 are anodes (or cathodes) of EL elements, and 20 is a cathode (or anode) of EL elements. Here, as the cathode 20, a thin metal layer having a thickness of 10 nm or less (typically MgAg, MgIn, A
lLi and other alloys) and transparent conductive film (ITO (indium oxide-tin oxide alloy), indium oxide-zinc oxide alloy (I
n ₂ O ₃ —ZnO), zinc oxide (ZnO), etc.) is used as an electrode, and light from each light emitting element is allowed to pass therethrough. Note that the thin metal layer functions as a cathode of the light-emitting element, but in this specification, a transparent conductive film stacked over the thin metal layer is also referred to as a cathode.

Both ends of 11 to 13 and the space between them are covered with the inorganic insulator 14. Further, the organic compound layer is formed even on a part of the inorganic insulator 14. The film thickness of the inorganic insulator 14 is 1 μm or less.
It is possible to improve the coverage of the film formed on the insulating layer 4 and thin the film formed on the inorganic insulator 14.

FIG. 1C is a sectional view taken along the chain line CC ′ shown in FIG. Also, FIG.
In (C), the electrodes indicated by the dotted lines indicate that they are electrically connected to each other. In the terminal portion, the electrode of the terminal is made of the same material as the cathode 20.

Further, the sealing substrate 30 is adhered by the sealing material 33 so that the distance of about 10 μm is maintained, and all the light emitting elements are hermetically sealed. In addition, it is preferable that the sealing material 33 has a narrow frame so as to overlap a part of the drive circuit. Sealing substrate 3 with sealing material 33
Immediately before attaching 0, it is preferable to perform degassing by annealing in vacuum. Further, when the sealing substrate 30 is attached, it is performed in an atmosphere containing hydrogen and an inert gas (rare gas or nitrogen) to protect the protective film 32 and the sealing material 33.
It is preferable that the space sealed by the sealing substrate 30 contains hydrogen. By utilizing the heat generated when the light emitting element emits light, hydrogen can be diffused from the space containing hydrogen and a defect in the organic compound layer can be terminated with hydrogen. Terminating defects in the organic compound layer with hydrogen improves the reliability of the light emitting device.

Further, in order to enhance the color purity, the sealing substrate 3
At 0, a color filter corresponding to each pixel is provided. In the color filter, the red colored layer 31b is provided so as to face the red light emitting region (R), and the green colored layer 3 is provided.
1c is provided so as to face the green light emitting area (G), and the blue colored layer 31d is provided so as to face the blue light emitting area (B). Areas other than the light emitting area are shielded by the black portion of the color filter, that is, the light shielding portion 31a. The light shielding portion 31a is composed of a metal film (chromium or the like) or an organic film containing a black pigment.

In the present invention, the circular polarizing plate is unnecessary by providing the color filter.

FIG. 1B is a sectional view taken along the chain line BB 'shown in FIG. Also in FIG. 1B, both ends of 11a to 11c and the space between them are covered with the inorganic insulator 14. Here, an example is shown in which the EL layer 17 that emits red light is common, but the EL layer 17 is not particularly limited, and an EL layer may be formed for each pixel that emits the same color.

Further, in FIG. 1, a protective film 32b is formed in order to enhance the reliability of the light emitting device. The protective film 32b is an insulating film containing silicon nitride or silicon oxynitride as a main component, which is obtained by a sputtering method. Further, in FIG. 1, in order to allow light emission to pass through the protective film 32b, it is preferable that the thickness of the protective film 32b be as thin as possible.

Further, in order to improve the reliability of the light emitting device, the protective film 32a containing hydrogen is formed before forming the protective film 32b. By forming the protective film 32a containing hydrogen before forming the protective film 32b, the organic compound layer 17 to
Terminate 19 defects. The film 32a containing hydrogen is
A thin film containing carbon as a main component or a silicon nitride film may be used. As a method of forming the film 32a containing hydrogen,
The temperature range that the organic compound layer can withstand, for example, room temperature to 1
It is formed by a plasma CVD method or a sputtering method at a temperature of 00 ° C. or lower. Note that in FIG. 1, the film 32a containing hydrogen is
It is regarded as the lower layer of the protective film. Further, the hydrogen-containing film 32a can also be used as a buffer layer for relaxing the film stress of the protective film 32b.

Needless to say, the present invention is not limited to the structure shown in FIG. Examples in which the configuration is partly different from that in FIG. 1C are shown in FIGS. Note that, for simplification, in FIGS. 10A to 10D, the same parts as those in FIG.

Although FIG. 1C shows an example in which an electrode made of the same material (transparent electrode) as the cathode is provided in the terminal portion,
FIG. 10A is an example in which an electrode made of the same material as the gate electrode of the TFT (the upper layer is the W film and the lower layer is the TaN film) is connected to the FPC.

FIG. 10B shows the pixel electrode (anode).
This is an example in which the electrode 10 made of the same material as the above is connected to the FPC. The electrode 10 is provided in contact with an electrode (upper layer is a W film and lower layer is a TaN film) made of the same material as the gate electrode of the TFT.

Further, FIG. 10C shows an electrode 10 made of the same material as the pixel electrode (anode) provided on the lead-out wiring of the TFT (wiring in which a TiN film, an Al film and a TiN film are laminated in this order). This is an example in which an electrode made of the same material (transparent electrode) as the cathode 20 formed above is connected to the FPC.

Further, FIG. 10D shows an electrode made of the same material (transparent electrode) as the cathode 20 formed on the lead wiring of the TFT (wiring in which the TiN film, the Al film and the TiN film are laminated in this order). This is an example of connecting to the FPC with.

FIG. 8 shows an example in which the structure is partially different from that of FIG. Note that, for simplification, in FIG. 8, the same parts as those in FIG.

As shown in FIG. 8A, the inorganic insulating film 14
In an example in which an insulator 24 (also called a bank, a bank, or a barrier) made of an organic resin covered with is provided between the light emitting regions 10R and 10G and between the light emitting regions 10G and 10B. is there. Such an insulator 24
However, depending on the patterning accuracy, it is inevitably difficult to narrow the gap between the light emitting region 10G and the light emitting region 10B. In many cases, the bank is provided around each pixel, but in FIG. 8, the bank is provided for each pixel row.

FIG. 9 shows an example in which the structure is partially different from that of FIG. Note that, for simplification, in FIG. 9, the same parts as those in FIG. 8 and FIG. Figure 9
8A shows an example in which the region of the stacked portion is larger than that in FIG. 8A. In FIG. 9B, the stacked portion is not provided and the end portion of the organic compound layer is over the insulator 24. An example of arrangement is shown.
As described above, the position of the end of the organic compound layer is different from that of the insulator 24.
There is no particular limitation as long as it is above.

In FIG. 1, since the insulator 24 made of organic resin is not provided, the interval between the light emitting regions can be narrowed as compared with FIG. 8, and a high-definition light emitting device can be realized.

Embodiment Mode 2 Here, a film containing hydrogen and a protective film are described with reference to FIGS.

The light emitting mechanism of the organic EL is based on the fact that electrons and holes are injected from the outside and the light emitting centers are excited by the recombination energy of these electrons and holes. The structure of the organic EL is typically a three-layer structure, but a two-layer structure (electron transport layer, hole transport layer) will be described here. FIG. 3A is a simplified energy band diagram of an EL element in which a cathode and an anode sandwich an organic compound layer having a two-layer structure.

FIG. 3A shows an ideal energy band diagram. Here, the light emitting mechanism will be described below by using ITO as the anode and MgAg as the cathode.

For the EL device having the above two-layer structure,
When a direct current voltage is applied from the outside, holes are injected from the ITO electrode, which is an anode, transported to the interface with the organic compound layer and injected into the organic compound layer. On the other hand, electrons are injected from the MgAg electrode, transported within the organic compound layer, reach the vicinity of the interface, and recombine with holes on the light emitting molecule. As a result, an excited state of the luminescent molecule is generated, and luminescence similar to the fluorescence spectrum of the molecule is generated.

However, it is expected that the energy band diagram shown in FIG. 3B is actually obtained.

It is considered that innumerable defects are present in the organic compound layer, and as shown in FIG. 3 (B), levels due to these defects are formed. If electrons are trapped in this defect, the luminous efficiency will be reduced. When trapped, they are deactivated in various ways, for example, heat deactivation or infrared light emission. It is considered that the cause of the defect is the presence of an unpaired bond or an unstable bond. For example, the material forming the organic compound layer contains a carbon atom, and the dangling bond of the carbon atom also becomes E.
When the L element continues to emit light, the heat generated by the emission breaks the unstable bond, resulting in an unpaired bond,
It is considered that the number of defects increases due to the occurrence of the chemical reaction and deterioration over time occurs.

Therefore, the present inventors have found that this defect is neutralized with hydrogen (hydrogen radical) to cause the band-to-band transition more efficiently to improve the brightness and prevent the deterioration. As means for neutralizing with hydrogen, a method of injecting hydrogen into the organic compound layer when forming a film containing hydrogen over the EL element, a method of generating plasma in a hydrogen atmosphere, or ion doping or ion implantation And the like.

Further, when an unstable bond in the organic compound layer is broken by causing the EL element to emit light and an unpaired bond is generated, a film containing hydrogen may be arranged near the organic compound layer. For example, the unpaired bond that is generated can be terminated with hydrogen, and deterioration can be suppressed. Hydrogen is an element that easily diffuses, and it diffuses even at a relatively low temperature.

A typical example of forming a film containing hydrogen over an EL element is shown below in FIG.

FIG. 4A is a schematic view showing an example of the laminated structure of the EL element. In FIG. 4A, 200 is an anode (or cathode), 201 is an EL layer, 202 is a cathode (or anode), 203 is a DLC film containing hydrogen, and 204 is a protective film. When light is emitted in the direction of the arrow in the drawing (when light is passed through the anode 202), a conductive material having a light-transmitting property or an extremely thin metal film (alloy such as MgAg, MgIn, AlLi, or CaN) is used as 202. ,
Alternatively, a film formed by a co-evaporation method with an element belonging to Group 1 or 2 of the periodic table and aluminum, or a stacked layer thereof is preferably used.

As the protective film 204, an insulating film containing silicon nitride or silicon nitride oxide as a main component, which is obtained by a sputtering method (DC method or RF method) may be used. A silicon nitride film can be obtained by using a silicon target and forming it in an atmosphere containing nitrogen and argon. Alternatively, a silicon nitride target may be used. Further, the protective film 204 may be formed using a film formation apparatus using remote plasma. Further, when the emitted light is passed through the protective film, it is preferable that the thickness of the protective film be as thin as possible.

Further, the DLC film 203 containing hydrogen contains 70 to 95 atom% of carbon and 5 to 30 atom% of hydrogen, and is very hard and excellent in insulating property. A DLC film containing hydrogen is formed by a plasma CVD method (typically, an RF plasma CVD method,
Microwave CVD method, electron cyclotron resonance (EC
R) CVD method, etc.), sputtering method or the like.

As a method of forming the DLC film 203 containing hydrogen, a temperature range that the organic compound layer can withstand,
For example, it is formed at room temperature to 100 ° C. or lower.

The reaction gas used for film formation when generating plasma is hydrogen gas and hydrocarbon-based gas (for example, C
H ₄ , C ₂ H ₂ , C ₆ H _6, etc.) may be used.

Hydrogen is diffused from the hydrogen-containing DLC film by performing heat treatment in a temperature range that the organic compound layer can withstand or by utilizing heat generated when the light emitting element emits light, and the organic compound layer The defects in can be terminated with hydrogen. Terminating the defects in the organic compound layer with hydrogen improves the reliability and brightness of the light emitting device. Further, when the DLC film containing hydrogen is formed, it is possible to terminate the defects in the organic compound layer with hydrogen by plasmaized hydrogen. In addition, the protective film formed over the DLC film containing hydrogen blocks hydrogen that diffuses to the protective film side efficiently,
It also serves to diffuse hydrogen into the organic compound layer and terminate defects in the organic compound layer with hydrogen. Note that the DLC film containing hydrogen can also function as a protective film for a light-emitting element.

Further, the hydrogen-containing DLC film can also function as a buffer layer, and when the silicon nitride film is formed in contact with the film made of the transparent conductive film by the sputtering method, impurities (In , Sn, Zn
However, it is possible to prevent impurities from being mixed into the silicon nitride film by forming the hydrogen-containing DLC film serving as a buffer layer therebetween. By forming the buffer layer with the above structure, it is possible to prevent impurities (In, Sn, etc.) from entering from the transparent conductive film and form an excellent protective film without impurities.

With such a structure, the light emitting element can be protected and the reliability and brightness can be improved.

Further, FIG. 4B is a schematic view showing another example of the laminated structure of the EL element. 30 in FIG. 4 (B)
0 is an anode (or cathode), 301 is an EL layer, 302 is a cathode (or anode), 303 is a silicon nitride film containing hydrogen, 3
Reference numeral 04 is a protective film. Further, when light is emitted in the direction of the arrow in the figure (when light is passed through the anode 302),
As 302, it is preferable to use a light-transmitting conductive material, a very thin metal film (MgAg), or a stacked layer thereof.

As the protective film 304, an insulating film containing silicon nitride or silicon oxynitride as a main component, which is obtained by a sputtering method (DC method or RF method) may be used. A silicon nitride film can be obtained by using a silicon target and forming it in an atmosphere containing nitrogen and argon. Alternatively, a silicon nitride target may be used. Further, the protective film 304 may be formed using a film forming apparatus using remote plasma. Further, when the emitted light is passed through the protective film, it is preferable that the thickness of the protective film be as thin as possible.

The silicon nitride film 303 containing hydrogen is formed by a plasma CVD method (typically, an RF plasma CVD method,
Microwave CVD method, electron cyclotron resonance (EC
R) CVD method, etc.), sputtering method or the like.

As a method of forming the silicon nitride film 303 containing hydrogen, the film is formed in a temperature range that the organic compound layer can withstand, for example, room temperature to 100 ° C. or less.

When the plasma CVD method is used as a method for forming the silicon nitride film 303 containing hydrogen, the reaction gas is a gas containing nitrogen (a nitrogen oxide gas represented by N ₂ , NH ₃ NOx, etc.). Alternatively, a hydrogen silicide gas (for example, silane (SiH ₄ ) or disilane or trisilane) may be used.

In the case where a sputtering method is used as a method for forming the silicon nitride film 303 containing hydrogen, a silicon target is used and an atmosphere containing hydrogen, nitrogen, and argon is used to obtain a silicon nitride film containing hydrogen. . Alternatively, a silicon nitride target may be used.

Hydrogen is diffused from the silicon nitride film containing hydrogen by performing heat treatment in a temperature range that the organic compound layer can withstand or by utilizing heat generated when the light emitting element emits light, and Defects in the layer can be terminated with hydrogen. Terminating the defects in the organic compound layer with hydrogen improves the reliability and brightness of the light emitting device. Further, when forming the above-described silicon nitride film containing hydrogen, it is possible to terminate the defects in the organic compound layer with hydrogen by the plasmatized hydrogen. Further, the protective film formed over the silicon nitride film containing hydrogen blocks hydrogen that diffuses to the protective film side, efficiently diffuses hydrogen into the organic compound layer, and terminates defects in the organic compound layer with hydrogen. It also plays a role in making it happen. In addition,
The silicon nitride film containing hydrogen can also function as a protective film for a light-emitting element.

Further, the silicon nitride film containing hydrogen can be made to function as a buffer layer, and when the silicon nitride film is formed in contact with the film made of the transparent conductive film by the sputtering method, the impurities contained in the transparent conductive film ( In, Sn, Zn
However, it is possible to prevent impurities from being mixed into the silicon nitride film by forming the hydrogen-containing silicon nitride film serving as a buffer layer therebetween. By forming the buffer layer with the above structure, it is possible to prevent impurities (In, Sn, etc.) from entering from the transparent conductive film and form an excellent protective film without impurities.

With such a structure, the light emitting element can be protected and the reliability and brightness can be improved.

FIG. 4C is a schematic diagram showing another example of the laminated structure of the EL element. 40 in FIG. 4 (C)
Reference numeral 0 is an anode (or cathode), 401 is an EL layer, 402 is a cathode (or anode), 403 is a film containing hydrogen, and 404 is a protective film. In the case where light is emitted in the direction of the arrow in the drawing (when light is emitted to the cathode 402), it is preferable to use a conductive material having a light-transmitting property as the material 402.

As the protective film 404, an insulating film containing silicon nitride or silicon oxynitride as a main component, which is obtained by a sputtering method (DC method or RF method) may be used. A silicon nitride film can be obtained by using a silicon target and forming it in an atmosphere containing nitrogen and argon. Alternatively, a silicon nitride target may be used. Further, the protective film 404 may be formed using a film formation apparatus using remote plasma. In addition, when light emission is passed through the protective film, the thickness of the protective film is
It is preferable to make it as thin as possible.

Further, for the film 403 containing hydrogen, a reactive gas containing hydrogen is used and a plasma CVD method (typically, RF is used).
It can be formed by a plasma CVD method, a microwave CVD method, an electron cyclotron resonance (ECR) CVD method, etc., a sputtering method, or the like.

As the film 403 containing hydrogen, a DLC film,
A silicon nitride film, a silicon oxynitride film, a silicon oxide film, or a stacked film thereof is used.

As a method of forming the film 403 containing hydrogen, the film is formed in a temperature range that the organic compound layer can withstand, for example, room temperature to 100 ° C. or less.

Hydrogen is diffused from the silicon nitride film containing hydrogen by performing heat treatment in a temperature range that the organic compound layer can withstand or by utilizing heat generated when the light emitting element emits light, so as to diffuse the organic compound. Defects in the layer can be terminated with hydrogen. Terminating the defects in the organic compound layer with hydrogen improves the reliability and brightness of the light emitting device. Further, when forming the above-described silicon nitride film containing hydrogen, it is possible to terminate the defects in the organic compound layer with hydrogen by the plasmatized hydrogen. Further, the protective film formed over the silicon nitride film containing hydrogen blocks hydrogen that diffuses to the protective film side, efficiently diffuses hydrogen into the organic compound layer, and terminates defects in the organic compound layer with hydrogen. It also plays a role in making it happen.

Further, the film 403 containing hydrogen can also function as a buffer layer of the protective film 404, and when the protective film made of a silicon nitride film is formed in contact with the film made of a transparent conductive film by a sputtering method, it is transparent. Impurities (In, Sn, Zn, etc.) contained in the conductive film may be mixed in the protective film. However, by forming the silicon nitride film containing hydrogen serving as a buffer layer therebetween, impurities are mixed in the silicon nitride film. Can also be prevented. By forming the buffer layer with the above structure, impurities (In, Sn) from the transparent conductive film are formed.
It is possible to form an excellent protective film containing no impurities.

With such a structure, the light emitting element can be protected and the reliability and brightness can be improved.

Although FIGS. 4A to 4C show an example in which the film containing hydrogen is a single layer, a stacked layer of a silicon nitride film containing hydrogen and a DLC film containing hydrogen, or these It may be a laminate of three or more layers.

Further, the present embodiment can be applied not only to the active matrix type display device but also to the passive type display device.

Further, this embodiment can be freely combined with the first embodiment.

(Embodiment 3) FIG. 5 shows an example in which the configuration is partially different from that of FIG. For simplification, FIG.
In FIG. 3, the same parts as those in FIG. In FIG. 5A, the sealing substrate 30 is covered with the film 35 containing silicon nitride as a main component, and the color filters 31a to 31d are formed.
This is an example of a structure in which diffusion of impurities from the inside is prevented. Also, FIG. 5B is a diagram corresponding to FIG. 1C,
In order to improve the adhesiveness of the sealing material 33, the convex portion 24 is formed of the same material as the color filters 31a to 31d.

Further, this embodiment mode can be freely combined with Embodiment Mode 1 or Embodiment Mode 2.

(Embodiment 4) Here, a manufacturing apparatus capable of making the laminated structure of FIG. 4A, the laminated structure of FIG. 4B and the laminated structure of FIG. An example of the (multi-chamber system) is shown in FIG.

In FIG. 6, 100a to 100k, 10
0m to 100v are gates, 101 and 119 are delivery rooms, 1
02, 104a, 107, 108, 111, 114 are transfer chambers, 105, 106R, 106B, 106G, 106.
H, 109, 110, 112 and 113 are film forming chambers and 103
Is a pretreatment chamber, 117a and 117b are sealed substrate loading chambers,
115 is a dispenser chamber, 116 is a sealing chamber, 118 is an ultraviolet irradiation chamber, and 120 is a substrate reversing chamber.

Hereinafter, a substrate provided with a TFT in advance is shown in FIG.
The procedure of carrying in the manufacturing apparatus shown in and forming the laminated structure shown in FIG.

First, the TFT and the anode 20 are placed in the delivery chamber 101.
A substrate provided with 0 is set. Next is the delivery room 101
It is transported to the transport chamber 102 connected to. It is preferable that the carrier chamber be evacuated in advance so that moisture and oxygen are not present as much as possible, and then an inert gas is introduced to bring the pressure to atmospheric pressure.

Further, the transfer chamber 102 is connected to a vacuum exhaust processing chamber for evacuating the transfer chamber. The vacuum evacuation processing chamber is equipped with a magnetic levitation type turbo molecular pump, a cryopump, or a dry pump. As a result, the ultimate vacuum in the transfer chamber can be set to 10 ⁻⁵ to 10 ⁻⁶ Pa, and the back diffusion of impurities from the pump side and the exhaust system can be controlled. To prevent impurities from being introduced into the device, the gas to be introduced is:
An inert gas such as nitrogen or a rare gas is used. As these gases introduced into the apparatus, those highly purified by a gas purifier before being introduced into the apparatus are used. Therefore, it is necessary to provide a gas purifier so that the gas is highly purified and then introduced into the film forming apparatus. As a result, oxygen, water, and other impurities contained in the gas can be removed in advance, so that these impurities can be prevented from being introduced into the apparatus.

Further, in order to remove moisture and other gases contained in the substrate, it is preferable to perform annealing for deaeration in a vacuum, and the annealing is carried to the pretreatment chamber 103 connected to the carrying chamber 102. Therefore, annealing may be performed. Further, if it is necessary to clean the surface of the anode, it may be transported to the pretreatment chamber 103 connected to the transport chamber 102 and cleaned there.

If necessary, a polymer organic compound layer may be formed on the entire surface of the anode. The manufacturing apparatus in FIG. 6 is provided with a film forming chamber 105 for forming an organic compound layer made of a polymer. In the case of forming by a spin coating method, an inkjet method or a spraying method, the film forming surface of the substrate is set to face up under atmospheric pressure. The substrate is appropriately inverted in a substrate inversion chamber 120 provided between the film forming chamber 105 and the transfer chamber 102. Further, after the film formation using the solution is carried out, it is preferable that the film is transported to the pretreatment chamber 103, where heat treatment in vacuum is performed to vaporize the solvent (moisture or the like).

Next, after transferring the substrate 104c from the transfer chamber 102 to the transfer chamber 104 without exposing it to the atmosphere, the transfer mechanism 104b transfers the substrate 104c to the film forming chamber 106R, and an EL layer emitting red light is formed on the anode 200. It is formed appropriately. Here, an example of forming by vapor deposition is shown. Deposition chamber 1
06R is set in the substrate reversal chamber 120 with the film formation surface of the substrate facing downward. Note that it is preferable that the deposition chamber be evacuated before loading the substrate.

For example, the degree of vacuum is 5 × 10 ⁻³ Torr.
(0.665 Pa) or less, preferably 10 ⁻⁴ to 10 ⁻⁶ P
Vapor deposition is performed in the film forming chamber 106R that is evacuated to a. During vapor deposition, the organic compound is vaporized in advance by resistance heating, and a shutter (not shown) is opened during vapor deposition to scatter toward the substrate. The vaporized organic compound is
It scatters upward and is deposited on the substrate through an opening (not shown) provided in a metal mask (not shown). The temperature (T ₁ ) of the substrate is 50 to 200 ° C., preferably 65 to 150 by means of heating the substrate during vapor deposition.
℃.

When three types of EL layers are to be formed in order to obtain full color, it is sufficient to form the film in the film forming chamber 106R and then sequentially form the film in each of the film forming chambers 106G and 106B. .

After the desired EL layer 201 is obtained on the anode 200, the carrier chamber 104 is then exposed to the atmosphere.
After the substrate is transferred from the transfer chamber 107 to the transfer chamber 107, the substrate is transferred from the transfer chamber 107 to the transfer chamber 108 without being exposed to the atmosphere.

Next, the EL layer 20 is transferred to the film forming chamber 110 by the transfer mechanism installed in the transfer chamber 108.
After forming a thin metal layer on the first layer, the thin film is conveyed to the film forming chamber 109 to form a transparent conductive film, and the cathode 202 including a stack of the thin metal layer and the transparent conductive film is appropriately formed. Here, the film formation chamber 110 is an evaporation device provided with Mg and Ag as evaporation sources, and the film formation chamber 109 is a sputtering device having at least a target made of a transparent conductive material.

Then, the transfer mechanism installed in the transfer chamber 108 transfers the film to the film forming chamber 112 to form a DLC film 203 containing hydrogen in a temperature range that the organic compound layer can withstand. Here, a plasma CVD apparatus is provided in the film forming chamber 112, and a hydrogen gas and a hydrocarbon-based gas (eg, CH ₄ , C ₂ H ₂ , C ₆ H _6, or the like) is used as a reaction gas for film formation. A DLC film containing hydrogen is formed. Further, instead of the DLC film, a silicon nitride film containing hydrogen may be formed to form the structure of FIG. The hydrogen-containing DL is not particularly limited as long as it has a means for generating hydrogen radicals.
At the time of forming the C film, the plasma-generated hydrogen terminates the defects in the organic compound layer with hydrogen.

Next, the transfer chamber 1 is exposed without being exposed to the atmosphere.
DLC film 2 containing hydrogen transported from 08 to the film formation chamber 113
A protective film 204 is formed on 03. Here, the film forming chamber 1
The sputtering apparatus has a target 13 made of silicon or a target made of silicon nitride in the inside 13. The silicon nitride film can be formed by setting the atmosphere in the deposition chamber to a nitrogen atmosphere or an atmosphere containing nitrogen and argon.

Through the above steps, the laminated structure shown in FIG.
That is, the light emitting element covered with the protective film and the DLC film containing hydrogen is formed on the substrate.

Next, the substrate on which the light emitting element is formed is transferred from the transfer chamber 108 to the transfer chamber 111 and further transferred from the transfer chamber 111 to the transfer chamber 114 without being exposed to the atmosphere.

Next, the substrate on which the light emitting element is formed is transferred from the transfer chamber 114 to the sealing chamber 116. The sealing chamber 1
It is preferable that a sealing substrate provided with a sealing material is prepared for 16.

The sealing substrate is the sealing substrate loading chamber 117a,
117b is externally set. In order to remove impurities such as water, annealing is performed in a vacuum in advance, for example,
Annealing is preferably performed in the sealed substrate loading chambers 117a and 117b. When the sealing material is formed on the sealing substrate, the transfer chamber 108 is set to the atmospheric pressure, and then the sealing substrate is transferred from the sealing substrate load chamber to the dispenser chamber 115, and the substrate provided with the light-emitting element. A sealing material for bonding with is formed, and the sealing substrate on which the sealing material is formed is transferred to the sealing chamber 116.

Then, in order to degas the substrate provided with the light emitting element, annealing is performed in a vacuum or an inert atmosphere, and then a sealing substrate provided with a sealing material and a substrate provided with the light emitting element are provided. Stick together. In addition, the sealed space is filled with hydrogen or an inert gas. Here, an example in which the sealing material is formed on the sealing substrate is shown, but the sealing material is not particularly limited, and the sealing material may be formed on the substrate on which the light emitting element is formed.

Next, the pair of bonded substrates are transferred from the transfer chamber 114 to the ultraviolet irradiation chamber 118. Next, UV light is irradiated in the ultraviolet irradiation chamber 118 to cure the sealing material. Although the ultraviolet curable resin is used as the sealant here, it is not particularly limited as long as it is an adhesive.

Next, the transfer chamber 114 is transferred to the delivery chamber 119 and taken out.

As described above, by using the manufacturing apparatus shown in FIG. 6, it is not necessary to expose the air to the outside air until the light emitting element is completely enclosed in the sealed space, so that a highly reliable light emitting apparatus can be manufactured. Becomes In the transfer chambers 102 and 114, vacuum and atmospheric pressure are repeated, but the transfer chamber 104
The vacuum is always maintained for a and 108.

Note that an in-line type film forming apparatus can also be used.

A procedure for carrying in a substrate having a TFT and an anode provided in advance to the manufacturing apparatus shown in FIG. 6 and forming the laminated structure shown in FIG. 4C will be described below.

First, the TFT and the anode 40 are placed in the delivery chamber 101.
A substrate provided with 0 is set. Next is the delivery room 101
It is transported to the transport chamber 102 connected to. It is preferable that the carrier chamber be evacuated in advance so that moisture and oxygen are not present as much as possible, and then an inert gas is introduced to bring the pressure to atmospheric pressure. A transparent conductive material is used as a material forming the anode 400, and an indium-tin compound, zinc oxide, or the like can be used. Then, it is conveyed to the pretreatment chamber 103 connected to the carry-in chamber 102. In this pretreatment chamber, cleaning of the surface of the anode, oxidation treatment, heat treatment, etc. may be performed. As the cleaning of the anode surface, ultraviolet ray irradiation in vacuum or oxygen plasma treatment is performed to clean the anode surface. Moreover, as the oxidation treatment, 100 to 1
It suffices to irradiate ultraviolet rays in an atmosphere containing oxygen while heating at 20 ° C. This is effective when the anode is an oxide such as ITO. The heat treatment is performed at a heating temperature of 50 ° C. or higher, preferably 65 to 1 which the substrate can withstand in vacuum.
Heating at 50 ° C. may be performed, and impurities such as oxygen and moisture attached to the substrate and impurities such as oxygen and moisture in the film formed over the substrate are removed. Particularly, since the EL material is easily deteriorated by impurities such as oxygen and water, it is effective to heat it in vacuum before vapor deposition.

If necessary, the substrate 104c is transferred from the transfer chamber 102 to the transfer chamber 104 without being exposed to the atmosphere, and then transferred to the film formation chamber 105 by the transfer mechanism 104b to form the EL layer on the anode 400. A hole transporting layer or a hole injecting layer, which is one layer, is appropriately laminated. Here, an example of forming by vapor deposition is shown. The film formation chamber 105 is set with the film formation surface of the substrate facing downward. Note that it is preferable that the deposition chamber be evacuated before loading the substrate.

Next, the film is transferred to the film forming chamber 106R, and the anode 4
00, an EL layer that emits red light is appropriately formed. Here, an example of forming by vapor deposition is shown. In the film forming chamber 106R,
The substrate is set in the substrate reversing chamber 120 with the film formation surface of the substrate facing downward. Note that it is preferable that the deposition chamber be evacuated before loading the substrate.

For example, the degree of vacuum is 5 × 10 ⁻³ Torr.
(0.665 Pa) or less, preferably 10 ⁻⁴ to 10 ⁻⁶ P
Vapor deposition is performed in the film forming chamber 106R that is evacuated to a. During vapor deposition, the organic compound is vaporized in advance by resistance heating, and a shutter (not shown) is opened during vapor deposition to scatter toward the substrate. The vaporized organic compound is
It scatters upward and is deposited on the substrate through an opening (not shown) provided in a metal mask (not shown). The temperature (T ₁ ) of the substrate is 50 to 200 ° C., preferably 65 to 150 by means of heating the substrate during vapor deposition.
℃.

When three types of EL layers are to be formed in order to obtain a full-color image, the EL layers may be formed in the film forming chamber 106R and then sequentially formed in the film forming chambers 106G and 106B. .

After the desired EL layer 401 is obtained on the anode 400, the carrier chamber 104 is then exposed to the atmosphere.
After the substrate is transferred from the transfer chamber 107 to the transfer chamber 107, the substrate is transferred from the transfer chamber 107 to the transfer chamber 108 without being exposed to the atmosphere.

If necessary, a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT) which acts as a hole injection layer before forming the cathode is used.
/ PSS) may be formed on the entire surface. The manufacturing apparatus in FIG. 6 is provided with a film forming chamber 105 for forming an organic compound layer made of a polymer. In the case of forming by a spin coating method, an inkjet method or a spraying method, the film forming surface of the substrate is set to face up under atmospheric pressure. Film forming chamber 10
5 and the transfer chamber 102 between the substrate reversing chamber 120
Then, the substrate is properly inverted. After the film formation using the aqueous solution, it is preferable that the film is transported to the pretreatment chamber 103, and heat treatment in a vacuum is performed there to vaporize the water.

Then, the EL layer 40 is transferred to the film forming chamber 110 by the transfer mechanism installed in the transfer chamber 108.
A cathode 402 made of a metal layer is formed on the first layer 1. Here, the film formation chamber 110 is a vapor deposition apparatus provided with AlLi as a vapor deposition source.

Next, the transfer mechanism installed in the transfer chamber 108 transfers the film to the film forming chamber 112 to form a film 403 containing hydrogen in a temperature range that the organic compound layer can withstand. Here, a plasma CVD apparatus is provided in the film formation chamber 112, and a reaction gas used for forming the film 403 containing hydrogen is hydrogen gas, a hydrocarbon-based gas, or a hydrogen silicide-based gas as appropriate, and the DLC is used. A film, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, or a film formed by stacking these films is formed. Note that there is no particular limitation as long as it is provided with a means for generating hydrogen radicals, and defects in the organic compound layer are terminated with hydrogen by plasmaized hydrogen when the film containing hydrogen is formed.

Next, the transfer chamber 1 is exposed without being exposed to the atmosphere.
The protective film 404 is transferred from 08 to the film formation chamber 113 and the protective film 404 is formed over the film 403 containing hydrogen. Here, the sputtering apparatus is provided with a target made of silicon or a target made of silicon nitride in the film formation chamber 113. The silicon nitride film can be formed by setting the atmosphere in the deposition chamber to a nitrogen atmosphere or an atmosphere containing nitrogen and argon.

Through the above steps, the laminated structure shown in FIG.
That is, the light emitting element covered with the protective film and the film containing hydrogen is formed on the substrate.

Since the subsequent steps are the same as the procedure for forming the laminated structure shown in FIG. 4A, description thereof will be omitted here.

As described above, by using the manufacturing apparatus shown in FIG. 6, the laminated structure shown in FIGS. 4 (A) to 4 (C) can be produced separately.

FIG. 7 shows a manufacturing apparatus partially different from that shown in FIG.

Although FIG. 6 shows an example in which only one film forming chamber is formed by the spin coating method, ink jet method or spray method, the manufacturing apparatus of FIG. This is an example in which three film forming chambers formed by a spray method are provided. For example, in the case where three types of EL layers are formed by a spin coating method, an inkjet method, or a spray method in order to obtain a full-color image, a film is formed in the film formation chamber 121a and then sequentially formed in each of the film formation chambers 121b and 121c. It may be formed by forming a film. In addition, after performing film formation using a spin coating method, an inkjet method, or a spray method,
It is preferable to convey to the pretreatment chamber 103, where heat treatment in a vacuum is performed to vaporize water.

Further, this embodiment mode can be freely combined with Embodiment Mode 1, Embodiment Mode 2, or Embodiment Mode 3.

(Fifth Embodiment) FIG. 11 shows an example in which the structure is partially different from that of FIG. Note that, for simplification, in FIG. 11, the same parts as those in FIG. 1 are denoted by the same reference numerals. FIG. 11A shows an example in which the auxiliary electrode 23 is formed on the inorganic insulating film 14. The auxiliary electrode 23 functions as a part of the cathode (or the anode). Since the resistance value of the cathode 20 formed of the transparent conductive film is relatively high, it is difficult to increase the screen size. However, by providing the auxiliary electrode 23, the resistance of the cathode (or anode) as a whole can be lowered. it can. In addition, the transparent conductive film can be thinned.

Further, the auxiliary electrode 23 is connected to the wiring or electrode in the lower layer. The auxiliary electrode 23 may be formed and patterned before forming the EL layer. The auxiliary electrode 23 is formed of a poly-Si, W doped with an impurity element imparting a conductivity type, using a sputtering method or a vapor deposition method.
WSi _x , Al, Ti, Mo, Cu, Ta, Cr, N
A film containing an element selected from i or Mo or an alloy material or a compound material containing the above element as a main component or a laminated film thereof may be used. Thus
The cathode can be drawn out by forming a transparent conductive film on the auxiliary electrode 23 in contact with the lower electrode.
Note that FIG. 11C is a cross-sectional view taken along the chain line CC ′ shown in FIG. 2. In addition, in FIG.
The electrodes shown by the dotted lines indicate that they are electrically connected to each other. In addition, in the terminal portion, the electrode of the terminal is the cathode 2
It is made of the same material as 0.

Further, this embodiment mode can be freely combined with Embodiment Mode 1, Embodiment Mode 2, Embodiment Mode 3, or Embodiment Mode 4.

The present invention having the above structure will be described in more detail with reference to the following examples.

(Example) [Example 1] In this example, an active matrix light emitting device formed on an insulating surface will be described. 12
FIG. 3 is a cross-sectional view of an active matrix light emitting device.
Although a thin film transistor (hereinafter referred to as “TFT”) is used as the active element here, a MOS transistor may be used.

A top gate type TFT is used as the TFT.
(Specifically, a planar type TFT is exemplified, but a bottom gate type TFT (typically an inverted stagger type TFT) can also be used.

In this embodiment, a substrate made of glass such as barium borosilicate glass or aluminoborosilicate glass, a quartz substrate, a silicon substrate, a metal substrate or a stainless steel substrate having an insulating film formed on its surface is used as the substrate 800. Good. Further, a plastic substrate having heat resistance that can withstand the processing temperature of this embodiment may be used, or a flexible substrate may be used.

First, as a lower layer 801 of a base insulating film by a plasma CVD method on a heat-resistant glass substrate (substrate 800) having a thickness of 0.7 mm, a film forming temperature of 40 by a plasma CVD method.
Silicon oxynitride film (composition ratio Si = 32%, O = 27) produced from source gases SiH ₄ , NH ₃ , and N ₂ O at 0 ° C.
%, N = 24%, H = 17%) to 50 nm (preferably 1)
0-200 nm). Then, after cleaning the surface with ozone water, the surface oxide film was diluted with diluted hydrofluoric acid (1/100 dilution)
To remove. Then, as the upper layer 802 of the base insulating film,
Film formation temperature of 400 ° C. by plasma CVD method, source gas SiH
₄ , silicon oxynitride film made of N ₂ O (composition ratio S
i = 32%, O = 59%, N = 7%, H = 2%)
A semiconductor film having an amorphous structure (here, amorphous) is formed by laminating a film having a thickness of 0 nm (preferably 50 to 200 nm) and further forming the film by a plasma CVD method at a film forming temperature of 300 ° C. and a film forming gas SiH ₄ without exposing to the atmosphere. A silicon film) is formed with a thickness of 54 nm (preferably 25 to 200 nm).

In this embodiment, the base insulating film has a two-layer structure.
As shown, a single layer film of an insulating film containing silicon as a main component or 2
You may form as a structure which laminated | stacked more than one layer. Also half
The material of the conductor film is not limited, but is preferably silicon or
Is silicon germanium (Si _1-XGe_X(X = 0.00
01-0.02)) using an alloy or the like, known means (spa)
To the sputtering method, LPCVD method, plasma CVD method, etc.)
It may be formed more. In addition, plasma CVD equipment
A leaf type device or a batch type device may be used. Well
Also, in the same film forming chamber, as the base insulating film without exposing to the atmosphere
The semiconductor film may be continuously formed.

Then, after cleaning the surface of the semiconductor film having an amorphous structure, an extremely thin oxide film of about 2 nm is formed on the surface with ozone water. Next, a slight amount of impurity element (boron or phosphorus) is doped to control the threshold value of the TFT. Here, an ion doping method in which diborane (B ₂ H ₆ ) is plasma-excited without mass separation is used, the doping condition is an acceleration voltage of 15 kV, and diborane is hydrogen at 1%.
The flow rate of the diluted gas is 30 sccm, and the dose is 2 ×
Boron is added to the amorphous silicon film at 10 ¹² / cm ² .

Then, a nickel acetate salt solution containing 10 ppm by weight of nickel was applied by a spinner. Instead of coating, a method of spattering nickel element over the entire surface by a sputtering method may be used.

Next, heat treatment is performed to crystallize the semiconductor film having a crystal structure. For this heat treatment, heat treatment of an electric furnace or irradiation of strong light may be used. When it is performed by heat treatment in an electric furnace, it is 4 to 24 at 500 to 650 ° C.
You can do it in time. Here, after the heat treatment for dehydrogenation (500 ° C., 1 hour), the heat treatment for crystallization (5
50 ° C., 4 hours) to obtain a silicon film having a crystal structure. Although crystallization is performed here by heat treatment using a furnace, crystallization may be performed by a lamp annealing apparatus that can perform crystallization in a short time.

Then, after removing the oxide film on the surface of the silicon film having a crystal structure with dilute hydrofluoric acid or the like, a solid-state laser capable of continuous oscillation was used to obtain crystals with a large grain size, and the second harmonic of the fundamental wave was used. The semiconductor film is irradiated with waves to the fourth harmonic. Irradiation with laser light is performed in the air or an oxygen atmosphere. In addition,
Since it is performed in the air or in an oxygen atmosphere, an oxide film is formed on the surface by laser light irradiation. Typically N
The second harmonic (532 nm) or the third harmonic (355 nm) of the d: YVO ₄ laser (fundamental wave 1064 nm) may be applied. Laser light emitted from a continuous oscillation YVO ₄ laser with an output of 10 W is converted into a harmonic by a non-linear optical element. There is also a method in which a YVO ₄ crystal and a non-linear optical element are put in a resonator to emit a higher harmonic wave. Then, preferably, a rectangular or elliptical laser beam is formed on the irradiation surface by an optical system, and the object to be processed is irradiated. At this time, the energy density of approximately 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, the semiconductor film may be moved relative to the laser light at a speed of about 10 to 2000 cm / s for irradiation.

Of course, the TFT can be manufactured by using the silicon film having the crystal structure before the second harmonic of the continuous wave YVO ₄ laser is irradiated, but the silicon film having the crystal structure after the laser light irradiation is used. This is desirable because the crystallinity is improved and the electrical characteristics of the TFT are improved. For example, when a TFT is manufactured using a silicon film having a crystal structure before the laser light irradiation, the mobility is 3
Although it is about 00 cm ² / Vs, the mobility is remarkably improved to about 500 to 600 cm ² / Vs when a TFT is manufactured using the silicon film having the crystal structure after the laser light irradiation.

Note that here, nickel was used as a metal element for promoting crystallization of silicon, and then the second harmonic wave of a continuous wave YVO ₄ laser was further irradiated, but it is not particularly limited. Even after a silicon film having a crystalline structure is formed and heat treatment for dehydrogenation is performed, the second harmonic of the continuous wave YVO ₄ laser is irradiated to obtain a silicon film having a crystalline structure. Good.

A pulsed laser may be used instead of the continuous wave laser. When a pulsed excimer laser is used, the frequency is 300 Hz and the laser energy density is 100 to 1000 mJ / cm ² (typical It is desirable to set it to 200 to 800 mJ / cm ² ). At this time, the laser beams may be overlapped by 50 to 98%.

Next, in addition to the oxide film formed by the laser light irradiation, the surface is treated with ozone water for 120 seconds to form a barrier layer made of an oxide film with a total thickness of 1 to 5 nm. In this example, the barrier layer was formed using ozone water, but the method of oxidizing the surface of the semiconductor film having a crystal structure by irradiation of ultraviolet rays in an oxygen atmosphere or the surface of the semiconductor film having a crystal structure by oxygen plasma treatment was used. 1 to 10 nm by oxidation method, plasma CVD method, sputtering method, vapor deposition method, etc.
A barrier layer may be formed by depositing a certain amount of oxide film. Further, the oxide film formed by laser light irradiation may be removed before forming the barrier layer.

Then, plasma CVD is performed on the barrier layer.
50 nm to 400 n of an amorphous silicon film containing an argon element to be a gettering site by a sputtering method or a sputtering method.
m, here a film thickness of 150 nm is formed. In this embodiment, a silicon target is formed by a sputtering method in an argon atmosphere at a pressure of 0.3 Pa to form a film.

Then, the resultant is placed in a furnace heated to 650 ° C. and heat-treated for 3 minutes to perform gettering to reduce the nickel concentration in the semiconductor film having a crystalline structure. A lamp annealing device may be used instead of the furnace.

Next, the barrier layer is used as an etching stopper to selectively remove the amorphous silicon film containing the argon element which is the gettering site, and then the barrier layer is selectively removed with dilute hydrofluoric acid. In addition, at the time of gettering,
Since nickel tends to move to a region having a high oxygen concentration, it is desirable to remove the barrier layer made of an oxide film after gettering.

Next, after forming a thin oxide film with ozone water on the surface of the obtained silicon film having a crystal structure (also referred to as a polysilicon film), a mask made of a resist is formed, and an etching treatment is performed into a desired shape. Forming a semiconductor layer separated into islands. After forming the semiconductor layer, the resist mask is removed.

Then, after removing the oxide film with an etchant containing hydrofluoric acid and simultaneously cleaning the surface of the silicon film,
An insulating film containing silicon as its main component to be the gate insulating film 803 is formed. Here, 115 n is formed by the plasma CVD method.
m thickness of silicon oxynitride film (composition ratio Si = 32%,
O = 59%, N = 7%, H = 2%).

Then, a film thickness of 20 to 10 is formed on the gate insulating film.
A first conductive film having a thickness of 0 nm and a second conductive film having a thickness of 100 to 400 nm are stacked. In this embodiment, a tantalum nitride film with a thickness of 50 nm and a thickness of 3 are formed on the gate insulating film 803.
A 70 nm tungsten film is sequentially stacked, and patterning is performed by the following procedure to form each gate electrode and each wiring.

As a conductive material for forming the first conductive film and the second conductive film, Ta, W, Ti, Mo, Al, Cu is used.
It is formed of an element selected from the above or an alloy material or a compound material containing the above element as a main component. Further, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus as the first conductive film and the second conductive film, or A
A gPdCu alloy may be used. Further, the structure is not limited to the two-layer structure.
i) A film and a titanium nitride film having a film thickness of 30 nm are sequentially laminated 3
It may have a layered structure. In the case of a three-layer structure, the first
Tungsten may be used in place of tungsten in the conductive film of No. 2, and an alloy film of Al and Ti (Al-Ti) is used in place of the alloy of Al and Si (Al-Si) film of the second conductive film. Alternatively, a titanium film may be used instead of the titanium nitride film of the third conductive film. Further, it may have a single layer structure.

An ICP (Inductively Coupled Plasma) etching method may be used for etching the first conductive film and the second conductive film (first etching process and second etching process). ICP
By using the etching method and adjusting the etching conditions (the amount of power applied to the coil-type electrode, the amount of power applied to the electrode on the substrate side, the temperature of the electrode on the substrate side, etc.), the film can be formed into a desired taper shape. It can be etched. Here, after forming a mask made of resist,
As the first etching condition, 700 W of RF (13.56 MHz) power was applied to the coil type electrode at a pressure of 1 Pa, CF ₄ , Cl ₂ and O ₂ were used as etching gases, and the gas flow rate ratio of each was 25. / 25/10 (sccm), and RF (13.56 MHz) power of 150 W is also applied to the substrate side (sample stage) to apply a substantially negative self-bias voltage. The electrode area size on the substrate side is 12.5 cm x
12.5 cm, and the coil-shaped electrode area size (here, a quartz disk provided with a coil) is a disk having a diameter of 25 cm. The W film is etched under the first etching conditions to make the end portions tapered. After that, the mask made of resist was not removed, and the second etching conditions were changed to CF ₄ and Cl _{2 as} etching gases, and the flow rate ratio of each gas was set to 30/30 (sccm).
500 W RF (13.56MH) to coil type electrode with pressure of Pa
z) Power was applied to generate plasma and etching was performed for about 30 seconds. 20 on the substrate side (sample stage)
RF (13.56MHz) power of W is applied and a substantially negative self-bias voltage is applied. _Second mixture of CF ₄ and Cl 2
Under the above etching conditions, the W film and the TaN film are etched to the same extent. Note that here, the first etching condition and the second etching condition are referred to as a first etching process.

Then, a second etching process is performed without removing the resist mask. Here, CF ₄ and Cl ₂ are used as the etching gas as the third etching condition, and the gas flow rate ratio of each is 30/30 (scc).
m) and a pressure of 1 Pa is applied to the coil-type electrode to generate R of 500 W.
F (13.56 MHz) power was applied to generate plasma and etching was performed for 60 seconds. 2 on the substrate side (sample stage)
A 0 W RF (13.56 MHz) power is applied and a substantially negative self-bias voltage is applied. After that, the mask made of resist is not removed, and the fourth etching condition is changed. CF ₄ , Cl _2, and O ₂ are used as etching gas, and the gas flow rate ratio of each gas is 20/20/20 (sccm). And 1
500 W RF (13.56MH) to coil type electrode with pressure of Pa
z) Power was applied to generate plasma and etching was performed for about 20 seconds. 20 on the substrate side (sample stage)
RF (13.56MHz) power of W is applied and a substantially negative self-bias voltage is applied. Note that here, the third etching condition and the fourth etching condition are referred to as the second etching treatment. At this stage, the first conductive layer 80
4a is a lower layer and the second conductive layer 804b is an upper layer, and a gate electrode 804 and each electrode 805 to 807 are formed.

Next, after removing the resist mask, a first doping process for doping the entire surface with the gate electrodes 804 to 807 as a mask is performed. The first doping treatment may be performed by an ion doping method or an ion implantation method. The condition of the ion doping method is that the dose amount is 1.
5 × 10 ¹⁴ atoms / cm ² and acceleration voltage of 60 to 100 k
Perform as eV. Phosphorus (P) or arsenic (As) is typically used as the impurity element imparting n-type. The first impurity regions (n ⁻ regions) 822 to 825 in a self-aligning manner
Is formed.

Next, a mask made of resist is newly formed. At this time, in order to reduce the off current value of the switching TFT 903, the mask is used as a channel formation region of the semiconductor layer forming the switching TFT 903 of the pixel portion 901 and one of the regions. It is formed by covering the part. The mask is also provided to protect the channel formation region of the semiconductor layer forming the p-channel TFT 906 of the driver circuit and the peripheral region thereof. In addition, the mask is formed so as to cover the channel formation region of the semiconductor layer forming the current control TFT 904 of the pixel portion 901 and the peripheral region thereof.

Next, a second doping process is selectively performed using the mask made of the above resist to form an impurity region (n ⁻ region) overlapping with a part of the gate electrode.
The second doping treatment may be performed by an ion doping method or an ion implantation method. Here, an ion doping method is used, a gas in which phosphine (PH ₃ ) is diluted with hydrogen to 5% is used at a flow rate of 30 sccm, and a dose amount is 1.5 × 10 ^14.
The atoms / cm ² are used, and the acceleration voltage is set to 90 keV. In this case, the resist mask and the second conductive layer are n
The second impurity regions 811 and 812 serve as masks for the impurity element imparting the mold. An impurity element imparting n-type conductivity is added to the second impurity region in the concentration range of 1 × 10 ¹⁶ to 1 × 10 ¹⁷ / cm ³ . Here, a region having the same concentration range as the second impurity region is also called an n ⁻ region.

Next, a third doping process is performed without removing the resist mask. The third doping treatment may be performed by an ion doping method or an ion implantation method. Phosphorus (P) or arsenic (As) is typically used as the impurity element imparting n-type. Here, the ion doping method is used, and phosphine (PH ₃ ) is 5% with hydrogen.
The flow rate of the diluted gas is 40 sccm, and the dose is 2
The acceleration voltage is set to × 10 ¹⁵ atoms / cm ² and the acceleration voltage is set to 80 keV. In this case, the mask made of resist and the first conductive layer and the second conductive layer serve as a mask for the impurity element imparting n-type, and the third impurity regions 813, 814, 8 are formed.
26-828 are formed. 1 × in the third impurity region
An impurity element imparting n-type is added within a concentration range of 10 ²⁰ to 1 × 10 ²¹ / cm ³ . Here, a region having the same concentration range as the third impurity region is also called an n ⁺ region.

Next, after removing the resist mask, a new resist mask is formed and a fourth doping process is performed. By the fourth doping process,
Fourth impurity regions 818, 819, 832, 833 and fifth impurity regions 816, 817 in which an impurity element imparting p-type conductivity is added to a semiconductor layer forming a semiconductor layer forming a p-channel TFT , 830 and 831 are formed.

Also, the fourth impurity regions 818, 819,
An impurity element imparting p-type conductivity is added to 832 and 833 within a concentration range of 1 × 10 ²⁰ to 1 × 10 ²¹ / cm ³ . The fourth impurity regions 818, 819, 832, 8
Region in the preceding step phosphorus (P) was added to 33 (n ^-
However, the conductivity type is p-type because the concentration of the impurity element imparting p-type is added 1.5 to 3 times that of the region. Here, a region having the same concentration range as the fourth impurity region is also called ap ⁺ region.

In addition, fifth impurity regions 816, 817,
830 and 831 are formed in a region overlapping with the tapered portion of the second conductive layer, and are 1 × 10 ¹⁸ to 1 × 10 ²⁰ / c.
An impurity element imparting p-type is added in the concentration range of m ³ . Here, a region having the same concentration range as the fifth impurity region is also called ap ⁻ region.

By the steps up to this point, each semiconductor layer is n-doped.
An impurity region having a conductivity type of p-type or p-type is formed. The conductive layers 804 to 807 serve as gate electrodes of the TFT.

Next, an insulating film (not shown) is formed so as to cover almost the entire surface. In this embodiment, a silicon oxide film having a film thickness of 50 nm is formed by the plasma CVD method. Of course, this insulating film is not limited to the silicon oxide film, and another insulating film containing silicon may be used as a single layer or a laminated structure.

Then, a step of activating the impurity element added to each semiconductor layer is performed. This activation step is performed by a rapid thermal annealing method (RTA method) using a lamp light source, a laser irradiation method, a heat treatment using a furnace, or a method combined with any of these methods.

In this embodiment, an example in which the insulating film is formed before the activation is shown, but after the activation is performed,
It may be a step of forming an insulating film.

Next, a step of hydrogenating the semiconductor layer is performed by forming a first interlayer insulating film 808 made of a silicon nitride film and performing heat treatment (heat treatment at 300 to 550 ° C. for 1 to 12 hours). This step is a step of terminating the dangling bond of the semiconductor layer with hydrogen contained in the first interlayer insulating film 808. The semiconductor layer can be hydrogenated regardless of the presence of an insulating film (not shown) made of a silicon oxide film. Plasma hydrogenation (using hydrogen excited by plasma) may be performed as another means of hydrogenation.

Next, a second interlayer insulating film 809a made of an organic insulating material or an inorganic insulating material is formed on the first interlayer insulating film 808. In this embodiment, an acrylic resin film 809a having a thickness of 1.6 μm is formed by a coating method.

Next, a contact hole reaching the conductive layer to be the gate electrode or the gate wiring and a contact hole reaching each impurity region are formed. In this embodiment, a plurality of etching processes are sequentially performed. In this embodiment, the second interlayer insulating film is etched using the first interlayer insulating film as an etching stopper, and then the first interlayer insulating film is etched.

After that, electrodes 835 to 841 are formed by using Al, Ti, Mo, W, etc., specifically, source wirings, power supply lines, lead electrodes, connection electrodes and the like. Here, the materials for these electrodes and wiring are Ti film (film thickness 1
00 nm) and an Al film containing silicon (film thickness 350 nm)
Patterning was performed using a laminated film of a Ti film (thickness: 50 nm). Thus, the source electrode and the source wiring,
Connection electrodes, lead electrodes, power supply lines, etc. are formed as appropriate. Note that the extraction electrode for making contact with the gate wiring covered with the interlayer insulating film is provided at the end portion of the gate wiring, and the end portions of the other wirings are also connected to an external circuit or an external power source. An input / output terminal portion provided with a plurality of electrodes is formed.

As described above, the n-channel TFT 90
5, a p-channel TFT 906, and a drive circuit 902 having a CMOS circuit in which these are complementarily combined
And n-channel TFT 903 or p in one pixel
A pixel portion 901 including a plurality of channel type TFTs 904 can be formed.

Next, a third interlayer insulating film 809b made of an inorganic insulating material is formed on the second interlayer insulating film 809a made of an organic insulating material or an inorganic insulating material. Here, a 200-nm-thick silicon nitride film 809b is formed by a sputtering method. Hydrogen may be contained in the reaction gas, and hydrogen may be contained in the silicon nitride film 809b film.

Next, the third interlayer insulating film 809b is etched to form a contact hole reaching the connection electrode 841 formed in contact with the drain region of the current control TFT 904 which is a p-channel TFT. Next, the pixel electrode 834 is formed so as to be in contact with the connection electrode 841. In this embodiment, since the pixel electrode 834 functions as the anode of the EL element, it has a high work function, specifically, platinum (Pt), chromium (Cr), tungsten (W),
Alternatively, a material such as nickel (Ni) is used, and the film thickness can be set to 0.1 to 1 μm.

Next, an inorganic insulator 842 is formed on both ends so as to cover the end portion of the pixel electrode 834. 842 may be formed of an insulating film containing silicon by a sputtering method and patterned. The reaction gas contains hydrogen, and the inorganic insulator 842
Hydrogen may be contained therein. Further, instead of the inorganic insulator 842, a bank made of an organic insulator may be formed.

Next, the EL layer 843 and the cathode 844 of the EL element are formed on the pixel electrode 834 whose both ends are covered with the inorganic insulator 842. The EL layer 843 may be formed by an inkjet method, an evaporation method, a spin coating method, or the like.

As the EL layer 843, an EL layer (a layer for emitting light and for moving carriers therefor) may be formed by freely combining a light emitting layer, a charge transport layer or a charge injection layer. For example, a low molecular weight organic EL material or a high molecular weight organic EL material may be used. Further, as the EL layer, a thin film formed of a light emitting material (singlet compound) that emits light (fluorescence) by singlet excitation or a thin film formed of a light emitting material (triplet compound) that emits light (phosphorescence) by triplet excitation can be used. Further, it is also possible to use an inorganic material such as silicon carbide for the charge transport layer and the charge injection layer. Known materials can be used as these organic EL materials and inorganic materials.

As the material used for the cathode 844, it is preferable to use a metal having a small work function (typically, a metal element belonging to Group 1 or 2 of the periodic table) or an alloy containing these. . The smaller the work function is, the higher the luminous efficiency is. Therefore, as the material used for the cathode, an alloy such as MgAg, MgIn, or AlLi, or an element which belongs to Group 1 or 2 of the periodic table and aluminum is co-evaporated. After thinly forming a film formed by the method, a transparent conductive film (ITO (indium oxide tin oxide alloy), indium oxide zinc oxide alloy (In ₂ O ₃ —
(ZnO), zinc oxide (ZnO), etc.) is preferably formed.

Next, a protective film 846 which covers the cathode 844 is formed. As the protective film 846, an insulating film containing silicon nitride or silicon oxynitride as its main component may be formed by a sputtering method. As described in Embodiment 2, defects in the EL layer are terminated with hydrogen (termination). Therefore, it is preferable to provide the film 845 containing hydrogen over the cathode 844.

As the film 845 containing hydrogen, an insulating film containing carbon or silicon nitride as a main component may be formed by a PCVD method. At the time of film formation, defects in the organic compound layer are formed by hydrogen due to hydrogen turned into plasma. It can also be terminated. In addition, heat treatment is performed in a temperature range that the organic compound layer can withstand, or heat generated when a light-emitting element emits light is used to diffuse hydrogen from the hydrogen-containing film to cause defects in the organic compound layer. Can be terminated with hydrogen.

The protective film 846 and the film 8 containing hydrogen are also included.
45 prevents the entry of substances such as moisture and oxygen that promote deterioration due to oxidation of the EL layer from the outside. However, the protective film and the film containing hydrogen may not be provided in the input / output terminal portion that needs to be connected to the FPC later.

FIG. 12 shows the stage in which the steps up to this point are completed. In FIG. 12, the switching TFT 903
And a TFT that supplies a current to the EL element (TF for current control)
However, it is needless to say that various circuits including a plurality of TFTs may be provided at the tip of the gate electrode of the TFT, and are not particularly limited.

Next, the EL element having at least the cathode, the organic compound layer, and the anode is sealed with a sealing substrate or a sealing can to completely shield the EL element from the outside and prevent moisture and oxygen from the outside. It is preferable to prevent entry of a substance that promotes deterioration of the EL layer due to oxidation such as. Immediately before sealing with a sealing substrate or a sealing can, it is preferable to perform degassing by annealing in vacuum. Further, it is preferable that the sealing substrate be attached in an atmosphere containing hydrogen and an inert gas (a rare gas or nitrogen) so that the space sealed by the sealing contains hydrogen. By utilizing the heat generated when the light emitting element emits light, hydrogen can be diffused from the space containing hydrogen and a defect in the organic compound layer can be terminated with hydrogen. Terminating defects in the organic compound layer with hydrogen improves the reliability of the light emitting device.

Next, an FPC (flexible printed circuit) is attached to each electrode of the input / output terminal portion with an anisotropic conductive material. The anisotropic conductive material is composed of resin and conductive particles having a diameter of several tens to several hundreds of μm whose surface is plated with Au or the like. The conductive particles are formed on each electrode of the input / output terminal and the FPC. The wiring is electrically connected.

A color filter corresponding to each pixel is provided on the sealing substrate. By providing the color filter, the circularly polarizing plate is not necessary. Further, if necessary, another optical film may be provided. Also, an IC chip or the like may be mounted.

According to the fourth embodiment using the manufacturing apparatus shown in FIG. 6 or 7, a light emitting device can be manufactured with high throughput.

Through the above steps, the module type light emitting device to which the FPC is connected is completed.

In addition, this embodiment can be freely combined with Embodiment Mode 1, Embodiment Mode 2, Embodiment Mode 3, Embodiment Mode 4, or Embodiment Mode 5.

[Embodiment 2] In Embodiment 1, the cathode is the transparent conductive film, and the emitted light is extracted in the direction of the arrow shown in FIG. 4 (A) or FIG. 4 (B). A structure (FIG. 4C) that emits light in a direction opposite to that of FIG. In the present embodiment, a configuration is shown in which light is emitted in the direction opposite to that of the first embodiment. However, since the materials of the anode and the cathode are different and the other materials are almost the same, detailed description thereof will be omitted here.

In this example, a transparent conductive film (I
TO (indium oxide-tin oxide alloy), indium oxide-zinc oxide alloy (In ₂ O ₃ —ZnO), zinc oxide (Zn
O) and the like) are used.

The cathode has a thickness of 80 nm to 20 nm.
0 nm alloy film, typically MgAg, MgIn, Al
A film in which an alloy such as Li or an element belonging to Group 1 or 2 of the periodic table and aluminum are formed by a co-evaporation method is used.

In this way, light can be emitted in the direction of the arrow shown in FIG.

Except for the above points, it is the same as the first embodiment.

Further, as in the case of Example 1, using the manufacturing apparatus shown in FIG. 6 or FIG. 7 and according to the fourth embodiment, a light emitting device can be manufactured with high throughput.

In addition, in Example 1, the pixel electrode may be used as a cathode, the organic compound layer and the anode may be laminated, and light may be emitted in the direction opposite to that of Example 1. In this case, the TFT connected to the pixel electrode is preferably an n-channel TFT.

In addition, the present embodiment is based on the first embodiment, the second embodiment, the third embodiment, the fourth embodiment, the fifth embodiment,
Alternatively, it can be freely combined with the first embodiment.

[Embodiment 3] An EL module (active matrix EL module, passive EL module) can be completed by carrying out the present invention. That is,
By carrying out the present invention, all electronic devices incorporating them are completed.

As such electronic devices, video cameras, digital cameras, head mounted displays (goggles type displays), car navigations, car stereos, personal computers, personal digital assistants (mobile computers, mobile phones, electronic books, etc.), etc. Is mentioned. Examples of these are shown in FIGS. 13 and 14.

FIG. 13A shows a personal computer, which has a main body 2001, an image input section 2002, and a display section 20.
03, keyboard 2004 and the like.

FIG. 13B shows a video camera, which includes a main body 2101, a display portion 2102, a voice input portion 2103, operation switches 2104, a battery 2105, and an image receiving portion 210.
Including 6 etc.

FIG. 13C shows a mobile computer (mobile computer), which includes a main body 2201, a camera portion 2202, an image receiving portion 2203, operation switches 2204, a display portion 2205, and the like.

FIG. 13D shows a goggle type display, which includes a main body 2301, a display portion 2302 and an arm portion 230.
Including 3 etc.

FIG. 13E shows a player that uses a recording medium (hereinafter, referred to as a recording medium) in which a program is recorded, and has a main body 2401, a display section 2402, and a speaker section 240.
3, a recording medium 2404, operation switches 2405 and the like. This player uses a DVD (D
digital Versatile Disc), CD
It is possible to play music, watch movies, play games, and use the internet.

FIG. 13F shows a digital camera, which includes a main body 2501, a display portion 2502, an eyepiece portion 2503, operation switches 2504, an image receiving portion (not shown) and the like.

FIG. 14A shows a mobile phone, which is a main body 29.
01, voice output unit 2902, voice input unit 2903, display unit 2904, operation switch 2905, antenna 290
6. Image input unit (CCD, image sensor, etc.) 2907
Including etc.

FIG. 14B shows a portable book (electronic book) including a main body 3001, display portions 3002 and 3003, a storage medium 3004, operation switches 3005, an antenna 3006.
Including etc.

FIG. 14C shows a display, which includes a main body 3101, a support base 3102, a display portion 3103, and the like.

By the way, the display shown in FIG. 14C has a small or medium size or a large size, for example, a screen size of 5 to 20 inches. Further, in order to form a display portion having such a size, it is preferable to use a substrate whose one side is 1 m and perform multi-chambering for mass production.

As described above, the applicable range of the present invention is extremely wide, and the present invention can be applied to electronic device manufacturing methods in all fields. In addition, the electronic device of this embodiment can be realized by using any combination of Embodiment Modes 1 to 5, Embodiment 1, and Embodiment 2.

[0240]

According to the present invention, the defects in the organic compound layer can be terminated with hydrogen, so that the reliability and brightness of the light emitting device are improved.

Further, according to the present invention, since a very expensive circularly polarizing film can be dispensed with, the manufacturing cost can be reduced.

According to the present invention, a full-color flat panel display using emission colors of red, green, and blue is provided with high definition and high aperture ratio, regardless of the method of forming the organic compound layer and the film forming accuracy. High reliability can be realized.

[Brief description of drawings]

FIG. 1 is a diagram showing a cross-sectional view. (Embodiment 1)

FIG. 2 is a diagram showing a top view. (Embodiment 1)

FIG. 3 is a diagram showing a model diagram. (Embodiment 2)

FIG. 4 is a diagram showing a laminated structure of the present invention. (Embodiment 2)

FIG. 5 is a diagram showing a cross-sectional view. (Embodiment 3)

FIG. 6 is a diagram showing an example of a manufacturing apparatus. (Embodiment 4)

FIG. 7 is a diagram showing an example of a manufacturing apparatus. (Embodiment 4)

FIG. 8 is a diagram showing a cross-sectional view. (Embodiment 1)

FIG. 9 is a diagram showing a cross-sectional view. (Embodiment 1)

FIG. 10 is a diagram showing a cross-sectional view. (Embodiment 1)

FIG. 11 is a diagram showing a cross-sectional view. (Embodiment 5)

FIG. 12 is a diagram showing a cross section of an active matrix substrate. (Example 1)

FIG. 13 illustrates an example of an electronic device.

FIG. 14 illustrates examples of electronic devices.

Front page continuation (51) Int.Cl. ⁷ Identification code FI theme code (reference) H05B 33/22 H05B 33/22 Z (72) Inventor Hideaki Kuwahara 398 Hase, Atsugi-shi, Kanagawa Semiconducting Energy Laboratory Co., Ltd. F-term (reference) 3K007 AB02 AB04 AB11 AB12 AB18 BA06 BB02 BB06 CB01 CC00 DB03 EA00 FA00 FA01 FA02 FA03

Claims (21)

[Claims] 1. A cathode and an organic compound layer in contact with the cathode,
A light emitting device having a plurality of light emitting elements having an anode in contact with the organic compound layer, the first light emitting element having a first organic compound layer, and the second light emitting element having a second organic compound layer. A third light emitting element having a third organic compound layer is disposed, and an insulator covering an end portion of the anode is provided, and the first organic compound layer is provided on the insulator and the anode, The second
Or a third organic compound layer is provided. 2. A cathode and an organic compound layer in contact with the cathode,
A light emitting device having a plurality of light emitting elements having an anode in contact with the organic compound layer, the first light emitting element having a first organic compound layer, and the second light emitting element having a second organic compound layer. A third light emitting element having a third organic compound layer is arranged, and an insulator covering an end portion of the cathode is provided, and the first organic compound layer is provided on the insulator and the cathode, A light-emitting device comprising the second organic compound layer or the third organic compound layer. 3. A light emitting device according to claim 1, wherein the light emitting element is covered with a film containing hydrogen. 4. The light emitting device according to claim 1, wherein the light emitting element includes a silicon nitride film containing hydrogen or a thin film containing carbon containing hydrogen as a main component. 5. The light emitting device according to claim 1, wherein the insulator is an inorganic insulating film. 6. The light emitting device according to claim 1, wherein the insulator is a bank made of an organic resin covered with an inorganic insulating film. 7. The light emitting device according to claim 1, wherein the inorganic insulating film is a silicon nitride film containing hydrogen or a thin film containing carbon containing hydrogen as a main component. 8. The first light emitting element according to claim 1, wherein the first light emitting element is one of red, green, and blue.
A light-emitting device which emits light of one color. 9. The light emitting device according to claim 1, wherein the first light emitting device, the second light emitting device, and the third light emitting device.
The light emitting element of the above emits different colors. 10. The method according to any one of claims 1 to 9,
The light emitting device has a color filter corresponding to each pixel formed of the first light emitting element, the second light emitting element, or the third light emitting element. . 11. The light emitting device according to claim 1, wherein the light emitting device is a video camera, a digital camera,
A light emitting device, which is a goggle type display, a car navigation, a personal computer or a personal digital assistant. 12. A method for manufacturing a light-emitting device having a plurality of light-emitting devices having an anode, an organic compound layer in contact with the anode, and a cathode in contact with the organic compound layer, wherein the organic compound layer is formed on the anode. A first step; a second step of forming plasma in the atmosphere containing hydrogen after forming the organic compound layer to terminate defects in the organic compound layer with hydrogen; and forming a cathode on the organic compound layer. And a third step of forming the light-emitting device. 13. A method for manufacturing a light emitting device having a plurality of light emitting elements, each having an anode, an organic compound layer in contact with the anode, and a cathode in contact with the organic compound layer, wherein the organic compound layer is formed on the anode. A first step, a second step of forming a cathode on the organic compound layer, and a treatment of terminating defects in the organic compound layer with hydrogen by generating plasma in an atmosphere containing hydrogen after forming the cathode And a third step, which is a method for manufacturing a light emitting device. 14. A method for manufacturing a light emitting device having a plurality of light emitting elements each having a cathode, an organic compound layer in contact with the cathode, and an anode in contact with the organic compound layer, wherein the organic compound layer is formed on the cathode. A first step; a second step of forming plasma in an atmosphere containing hydrogen after forming the organic compound layer to terminate defects in the organic compound layer with hydrogen; and forming an anode on the organic compound layer. And a third step of forming the light-emitting device. 15. A method for manufacturing a light emitting device having a plurality of light emitting elements each having a cathode, an organic compound layer in contact with the cathode, and an anode in contact with the organic compound layer, wherein the organic compound layer is formed on the cathode. A first step, a second step of forming an anode on the organic compound layer, and a treatment of terminating defects in the organic compound layer with hydrogen by generating plasma in an atmosphere containing hydrogen after forming the anode And a third step, which is a method for manufacturing a light emitting device. 16. A load chamber, a first connected to the load chamber
Transfer chamber, a pretreatment chamber connected to the first transfer chamber, a second transfer chamber connected to the first transfer chamber, and a plurality of organics connected to the second transfer chamber. A compound layer film forming chamber, a third transfer chamber connected to the second transfer chamber, a metal layer film forming chamber connected to the third transfer chamber, a transparent conductive film forming chamber, A processing chamber having a means for generating plasma in an atmosphere containing hydrogen, a protective film forming chamber, a fourth transfer chamber connected to the third transfer chamber, and a fourth transfer chamber connected to the fourth transfer chamber. And a sealed substrate loading chamber and a sealed chamber. 17. The manufacturing apparatus according to claim 16, wherein the pretreatment chamber has a vacuum evacuation unit, a heating unit, and a plasma generation unit. 18. The method according to claim 16 or 17,
An apparatus for forming an organic compound layer formed of a polymer material is connected to the first transfer chamber. 19. The apparatus according to claim 18, wherein the organic compound layer made of the polymer material is formed by a spin coating method, a spray method, an ion plating method, or an inkjet method. A manufacturing apparatus characterized by the above. 20. The film forming apparatus according to claim 16, wherein the processing chamber equipped with a means for generating plasma in an atmosphere containing hydrogen is a silicon nitride film or a film containing carbon as a main component. A manufacturing apparatus characterized by being present. 21. The manufacturing apparatus according to claim 16, wherein a film formation chamber for a plurality of organic compound layers connected to the second transfer chamber has a vapor deposition source.