JP2003165791A - Method for producing silicon single crystal and device using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To enable the high-speed growth of a silicon single crystal by Czochralski method and also to improve its yield in the high-speed growth thereof. <P>SOLUTION: A cooling body 8 is provided within a thermally shielded body 7 surrounding the silicon single crystal 11 which is picked from material molten liquid 10 in a crucible 3. A heater 9 is formed below the cooling body 8. The pulled crystal is forcibly cooled with the cooling body 8 and the deformation of the crystal is suppressed, thus the high-speed growth of the crystal is made possible. The vicinity of the solid-liquid interface of the pulled crystal is forcibly heated by the heater 9, thus the cracking of the crystal or the formation of dislocation thereof which is caused by the increase of thermal stress in the vicinity of the solid-liquid interface due to forcible cooling is prevented, so that the yield of the crystal is improved. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon single crystal manufacturing method and apparatus for pulling a silicon single crystal from a raw material melt in a crucible by the Czochralski method.

[0002]

2. Description of the Related Art The Czochralski method (CZ method) is widely used as a method for producing a silicon single crystal. In the production of a silicon single crystal by the CZ method, a raw material melt (polycrystalline silicon) is melted in a quartz crucible to form a raw material melt, and a seed crystal fixed to the lower end of a pulling shaft is placed in the melt. The silicon single crystal is grown below the seed crystal by immersing and raising the pulling shaft while rotating the crucible and the pulling shaft.

In the production of silicon single crystals by the CZ method, the productivity depends on the crystal growth rate. Therefore, various attempts have been made to increase the growth rate,
As a general tendency, when the growth rate is increased, the crystal deformation becomes remarkable, so it is important to suppress the crystal deformation when the pulling rate is increased, and as one of the methods, silicon pulled from the raw material melt is used. There is a cylindrical heat shield surrounding the single crystal, and it is effective to install a cooling body for forcibly cooling the silicon single crystal (Japanese Patent Laid-Open Nos. 63-256593 and 08). -08
1294, Japanese Patent Laid-Open No. 08-239291).

The reason why the growth rate can be improved when the cooling body is used is considered as follows. The crystal growth rate is closely related to the axial temperature gradient of the crystal. During crystal growth, solidification latent heat is generated near the solid-liquid interface of the crystal, and if this solidification latent heat cannot be dissipated upward from the solid-liquid interface through the crystal, the crystal deforms and the growth becomes unstable. Become. The solidification latent heat generated near the solid-liquid interface of the crystal increases as the growth rate increases, but if the axial temperature gradient is large, a larger solidification latent heat must be removed from the solid-liquid interface through the crystal upward. You can That is, the crystal can be grown at a higher speed. Therefore, it has been conventionally performed to increase the crystal growth rate by forcibly cooling the crystal.

This tendency is not an exception even for large-diameter crystals, and the growth rate of a silicon single crystal of 300 mm diameter, which has recently been manufactured, is 0.6 to 0.8 mm / unless forced cooling is performed using a cooling body. However, if crystal deformation is suppressed by forced cooling, it becomes possible to exceed 1.0 mm / min.

[0006]

However, when the silicon single crystal pulled up from the raw material melt is forcibly cooled and grown at high speed, the crystal is grown during the growth of the single crystal due to an increase in thermal stress at the solid-liquid interface. It may break.

Further, application of a horizontal magnetic field is known as another means for increasing the crystal growth rate [Semiconductor
Silicon (1986) 142-152]. The growth rate can be increased by applying a horizontal magnetic field because the application of the magnetic field changes the convection state of the melt in the crucible and suppresses crystal deformation. However, regarding the thermal stress, there is no problem when the crystal diameter is as small as about 100 mm, but when the crystal diameter becomes large, cracks occur due to the increase in thermal stress, and even if the cracks do not occur, the crystals frequently grow during the growth. To dislocation.

An object of the present invention is to provide a method and apparatus for producing a silicon single crystal which enables high speed growth while suppressing cracking and dislocation formation of the crystal during growth.

[0009]

From the results of the experiments so far, the present inventors have found that when the pulled crystal is forcibly cooled,
Although it was confirmed that the growth rate could be increased without deforming the crystal, at the same time, we often experienced cracks in the crystal during growth, and even when cracks did not occur, we experienced a phenomenon in which the crystal frequently became dislocation during growth. did. In the usual CZ pulling up, such crystal cracks have never been found.

Therefore, the present inventors have investigated and examined the cause of the cracks and the cause of frequent occurrence of dislocations.
As mentioned earlier, it was thought that the cause was the large thermal stress generated near the solid-liquid interface of the crystal. That is, normal C
Crystals cannot be grown at high speed by Z pulling. Crystal growth becomes noticeable when grown at high speed. When the crystal is not grown at high speed, the tendency of upward convexity on the solid-liquid interface due to the latent heat of solidification is relatively low, and it is considered that the thermal stress generated near the solid-liquid interface is small. It is considered that, when the growth was performed, the tendency of upward convexation near the solid-liquid interface became remarkable and the thermal stress generated near the solid-liquid interface became large, so that cracking and dislocation formation were likely to occur.

Explaining in detail the generation of dislocation, it is considered that the cause of the generation of dislocation is the generation of local stress around the foreign material caused by the inclusion of the foreign material in the melt or on the surface of the melt into the silicon crystal. On the other hand, thermal stress due to the temperature distribution of the crystal is generated in the vicinity of the solid-liquid interface, and the larger the thermal stress, the more the stress due to the foreign matter and the thermal stress act in a superimposed manner to easily cause dislocation. The thermal stress in the vicinity of the solid-liquid interface occurs due to the different degrees of cooling of the crystal central portion and the crystal outer peripheral portion. Therefore, when the crystal is simply cooled by installing a cooling body around the crystal, a difference in cooling degree between the crystal central portion and the crystal outer peripheral portion occurs, and specifically, the degree of cooling of the outer peripheral portion becomes larger, Thermal stress increases.

Therefore, the inventors of the present invention consider that it is effective to suppress the generation of dislocations by mitigating the difference in cooling degree between the crystal central portion and the crystal outer peripheral portion in the vicinity of the solid-liquid interface when the crystal is forcibly cooled. In the lower part of the, the vicinity of the solid-liquid interface of the crystal was forcibly heated locally by the heater. As a result, it has been found that cracking and dislocation generation can be suppressed without reducing the effect of suppressing crystal deformation by forced cooling.

The method for producing a silicon single crystal of the present invention has been developed based on such findings, and when pulling a silicon single crystal from a raw material melt in a crucible by the Czochralski method, the pulling crystal is forced. In addition to cooling, the lower part of the crystal below the cooling part is forcibly heated and / or kept warm.

Further, the apparatus for producing a silicon single crystal of the present invention is provided with a cooling body for forcibly cooling the silicon single crystal pulled from the raw material melt in the crucible by the Czochralski method, and below the cooling body. A heating body that heats the lower portion of the silicon single crystal and / or a heat retaining body that retains the lower portion is provided.

A guideline for relaxing the difference in cooling degree between the crystal central portion and the crystal outer peripheral portion will be described below. In order to reduce the difference in the degree of cooling between the crystal center and the crystal outer peripheral portion, it is necessary to suppress the temperature difference between the crystal center and the crystal outer peripheral surface in the horizontal plane passing through the center of the solid-liquid interface. Specifically, it is necessary to suppress the temperature difference to 200 ° C. or less. When viewed from the isotherm, this temperature difference is represented by the isotherm curving upward as shown in FIG. Therefore, reducing the temperature difference in the radial direction is synonymous with bringing the isotherms closer to horizontal. That is, when the isotherm is leveled, the crystal central portion and the crystal outer peripheral portion are cooled in the same manner. The isotherm is convex upward because the heat escapes from the outer peripheral surface of the crystal, and the isotherm can be leveled by heating the lower part of the crystal from the outer peripheral surface. Also, instead of heating the lower part of the crystal, the same effect can be obtained by keeping the lower part of the crystal warm.

In the method for producing a silicon single crystal of the present invention, by suppressing the deformation of the crystal, the crystal diameter is A (mm), the crystal growth rate is 270 / A (mm / min) or higher, and 360 / High-speed growth of A (mm / min) or more is possible, and cracks and dislocations of crystals are effectively suppressed even with such high-speed growth. This stable high-speed growth is possible even when the crystal diameter is 300 mm or more. If a magnetic field is applied, specifically, a horizontal magnetic field is applied to the melt, it is possible to grow at a higher speed.

In the silicon single crystal manufacturing apparatus of the present invention, it is preferable that the cooling body, the heating body and the heat retaining body are arranged inside the heat shield surrounding the silicon single crystal. As a result, the growing speed can be further increased.

For the heating element, the height of the heating element is HL,
Let HH be the height from the melt surface to the bottom of the heating element,
(H + HL), that is, the height from the melt surface to the upper end of the heating body is preferably set to be equal to or smaller than the crystal radius. If this height exceeds the crystal radius, the effect of reducing thermal stress near the solid-liquid interface saturates, and the upper cooling body is pushed upward, resulting in a decrease in forced cooling of the crystal near the solid-liquid interface. However, the effect of suppressing crystal deformation is reduced. The lower limit of this height is preferably 25 mm or more. If it is less than this, the effect for lowering the thermal stress is reduced. Further, the height HH from the melt surface to the lower end surface of the heating body is preferably 10 mm or more from the viewpoint of safety that the heating body and the melt are not brought into contact with each other.

As the heating element, for example, a resistance heating type heater (made of high purity carbon) can be used.

As for the heat retaining body, the height of the heat retaining body is DL
(Mm) and the height from the melt surface to the bottom of the heat retaining body is D
When H (mm), 70 ≦ 2.3 × DH + DL,
Moreover, it is preferable to satisfy the condition of 3.6 × DH + DL ≦ 180.

Heat of the heater is radiated to the vicinity of the solid-liquid interface of the crystal through a gap formed between the surface of the melt and the heat retaining body, which has the effect of relaxing the temperature difference in the radial direction of the crystal like the heat retaining body. If 70 ≦ 2.3 × DH + DL is not satisfied,
That is, in the case of 70> 2.3 × DH + DL, when the crystal growth rate is a high-speed growth of 270 / crystal diameter (mm) or more, the thermal stress generated at the solid-liquid interface increases, and the crystal breaks and falls. Or, the yield of single crystal may decrease. On the other hand, when 3.6 × DH + DL ≦ 180 is not satisfied, that is, 3.6 × DH + DL> 180, when the crystal growth rate is the high-speed growth of 270 / crystal diameter (mm) or more, the crystal under growth is grown. Deformation occurs, and growing itself becomes difficult. That is, in high-speed growth, 70 ≦ 2.3
When × DH + DL and 3.6 × DH + DL ≦ 180 are satisfied, crystal deformation is prevented, and cracks and dislocations in the crystal are prevented, which enables stable high-speed growth.

However, the height DH from the surface of the melt to the lower end surface of the heat retainer is preferably 10 mm or more, preferably 15 to 30 m, because if the heat retainer is brought too close to the melt, it easily comes into contact with the melt.
m is particularly preferred. Further, the height DL of the heat retaining body is preferably 10 mm or more from the viewpoint of ensuring the strength of the heat insulating heat insulating material, and 3
0 to 70 mm is particularly preferable.

As the heat retaining body, a molded heat insulating material made of high-purity carbon fiber, felt or the like is preferable.

The height WL of the cooling body is 50 m.
It is preferably m or more. If this height WL is too small, crystal deformation cannot be suppressed. From the viewpoint of suppressing crystal deformation, it is effective to have the largest possible size. The height WH from the melt surface to the lower end of the cooling body is preferably 400 mm or less,
Particularly preferred is 250 mm or less. If this height WH is too large, the forced cooling near the solid-liquid interface of the crystal is reduced,
The effect of suppressing crystal deformation is reduced.

As the cooling body, for example, a water cooling body of water-permeable structure made of copper or stainless steel can be used.

The distance from the outer peripheral surface of the crystal to the heating body or the heat retaining body is preferably 10 to 60 mm, and 15 to 40 mm.
Is particularly preferable. If this distance is too small, the diameter of the crystal may fluctuate, so that the outer peripheral surface of the crystal may come into contact with the heating body or the heat retaining body.

[0027]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 2 is a vertical sectional view of a pulling furnace for producing a silicon single crystal showing an embodiment of the present invention, and FIG. 3 is a perspective view of a main part of the pulling furnace.

This pulling furnace is provided with a large-diameter main chamber 1 and a small-diameter pull chamber 2 as a furnace body. The pull chamber 2 is mounted and connected on the center of the main chamber 1. At the center of the main chamber 1, a crucible 3 is installed. The crucible 3 has a double structure in which an inner quartz crucible 3a and an outer holding crucible 3b made of graphite are combined, and is supported on a support shaft 4 called a pedestal via a saucer. The support shaft 4 moves up and down and rotates the crucible 3.

An annular heater 5 is installed outside the crucible 3, and a heat insulating material 6 is installed outside the heater 5 along the inner surface of the main chamber 1. On the other hand, above the crucible 3, a cylindrical heat shield 7 made of graphite is installed. The heat shield 7 is a raw material melt 10 formed in the crucible 3.
It surrounds the silicon single crystal 11 that is pulled from the single crystal 11 and prevents the radiant heat from the heater 5 and the raw material melt 10 from irradiating the outer peripheral surface of the single crystal 11.
1 has a main body portion 7a and a flange portion 7b protruding outward from the upper end portion of the main body portion 7a. In order to enhance the shielding effect on the single crystal 11, the main body portion 7a is
It has a cone shape with the diameter gradually increasing upward.

Inside the body portion 7a of the heat shield 7, an annular cooling body 8 is concentrically arranged along the inner surface of the body portion 7a. The cooling body 8 has a jacket structure in which cooling water passes through, and the outer peripheral surface of the single crystal 11 is forcibly cooled by the cooling water passing through the inside. Below the cooling body 8,
The annular heating body 9 is concentrically arranged along the inner surface of the lower end portion of the main body portion 7a. As shown in FIG. 3, the heating element 9 is a resistance heating type electric heater (for example, a carbon heater) of the same type as the heater 5 installed outside the crucible 3,
An annular main body 9a is supported below the cooling body 8 by the supports 9b and 9b which also serve as current-carrying leads.

In the operation, the raw material melt 10 is formed in the crucible 3 while maintaining a predetermined atmosphere in the furnace body. A seed crystal connected to a lower end of a pulling shaft 12 suspended in the main chamber 1 through a pull chamber 2 by a seed chuck 13 is dipped in a raw material melt 10 and pulled from this state while rotating the crucible 3 and the pulling shaft 12. By raising the shaft 12, the single crystal 11 is grown below the seed crystal.

At this time, cooling of the single crystal 11 pulled up from the raw material melt 10 is promoted by shielding the radiant heat by the heat shield 7 and forced cooling by the cooling body 8. This suppresses the deformation of the single crystal 11 and enables high-speed growth, but on the other hand, as shown in FIG. 1A, the difference in cooling degree between the crystal central portion and the crystal outer peripheral portion is large. As described above, cracks and dislocation formation frequently occur due to the thermal stress generated due to. Therefore, in the present embodiment, the lower portion (near the solid-liquid interface) of the single crystal 11 below the cooling portion.
The outer peripheral surface of is heated by the heating body 9 from the surroundings. As a result, as shown in FIG. 1 (b), the isotherm is leveled and the difference in cooling degree between the crystal central portion and the crystal outer peripheral portion is relaxed, resulting in reduction of thermal stress generated near the solid-liquid interface, Single crystal 1
1 cracking and dislocation generation are prevented.

Next, the implementation results of this embodiment will be described.

The single crystal 11 has a diameter of 306 mm and a straight body length of 5
It is 00 mm. Quartz crucible 3a has an inner diameter of 650m
m, height 430 mm, and accommodated 150 kg of silicon raw material. The growth rate of the single crystal 11 was 0.6 mm / min, 0.8 mm / min, 0.9 m as the pulling proceeded.
m / min, 1.0 mm / min, 1.2 mm / min
And gradually increased.

The cooling body 8 arranged inside the heat shield 7 has a height of 300 mm, a minimum inner diameter (lower end inner diameter) of 400 mm,
The maximum inner diameter (upper end inner diameter) was 500 mm, and the height from the melt surface to the lower end surface was 120 mm. The following two types were used as the heating element 9.

No. 1 is height HL 30mm, inner diameter 370
mm, thickness 15 mm, heater power 4 kW, and the height HH from the melt surface to the lower end was 30 mm. No. 2 is height HL 70mm, inner diameter 370m
m, thickness 15 mm, heater power 4 kW, and the height HH from the melt surface to the lower end was 30 mm.

[0037]

[Table 1]

Table 1 shows the results when 10 pieces were pulled up under each condition. Inventive Example 1 includes the cooling body 8 and the No. In the example of the present invention example 2 in which the heating element 9 is used in combination, the cooling element 8 and No. 1 are used. This is an example in which two heating elements 9 are used together.

Normal CZ without using cooling body 8 or heating body 9
In the case of No. 2, the growth became impossible due to the remarkable deformation at the high speed growth of 0.9 mm / min or more. When the cooling body 8 was installed, the limitation of high-speed growth due to crystal deformation was avoided, but it was found that the crystal cracked and dropped during high-speed growth at a growth rate of 1.0 mm / min or more. Also,
When the growth rate was 0.9 mm / min or more, dislocation was likely to occur, and when the growth rate was 1.2 mm / min or more, this became remarkable.

Instead of using the cooling body 9, a horizontal magnetic field of 3000 gauss was applied to the raw material melt 10 in the crucible 3.
Although the restriction of high-speed growth due to crystal deformation was avoided, it was once experienced that the crystal would crack and drop during high-speed growth at a growth rate of 1.2 mm / min or more. In addition, dislocation dislocation easily occurred when the growth rate was 0.9 mm / min or more.

On the other hand, in Invention Examples 1 and 2 in which the cooling body 8 and the heating body 9 were used in combination, the growth rate was 0.9 mm / m.
Deformation was suppressed even at high speed growth of in or more, and the high speed growth was realized without any problem. In addition, the high-speed growth prevented crystal cracking and dislocation formation, and ensured a high yield.

When the growth rate was set to 1.5 mm / min, even if the cooling body 8 and the heating body 9 were used together, the growth was impossible due to the remarkable deformation. However, in this state, a horizontal magnetic field of 3000 gauss was applied to the raw material melt 10 in the crucible 3. Deformation was suppressed and it became possible to grow. In addition, 5
No cracking occurred when the book was pulled up, and dislocation occurred only in one of the five books.

FIG. 4 is a vertical sectional view of a pulling furnace for producing a silicon single crystal showing another embodiment of the present invention, and FIG. 5 is a vertical sectional view of a main part of the pulling furnace.

In this embodiment, a heat retaining body 15 is installed below the cooling body 8 arranged inside the heat shield 7 made of graphite, instead of the heating body 9. Insulator 15
Is formed of a carbon fiber molded body which is a heat resistant heat insulating material, and is molded into an annular body surrounding the lower portion of the single crystal 11. The heat retaining body 15 is supported by a graphite support body 16 formed by extending the lower end portion of the heat shield body 7 inward.

The other parts of the configuration are the same as those of the above-described embodiment, so the same parts are designated by the same reference numerals and the description thereof is omitted.

Also in this embodiment, the single crystal 11 pulled up from the raw material melt 10 shields the radiant heat by the heat shield 7.
And the forced cooling by the cooling body 8 promotes cooling. Thereby, the deformation of the single crystal 11 is suppressed, and high-speed growth becomes possible. In addition, the outer peripheral surface of the lower part (near the solid-liquid interface) below the cooling part of the single crystal 11 is kept warm by the heat retaining body 15, and the heat radiation cooling from the outer peripheral surface is suppressed. as a result,
The difference in the degree of cooling between the crystal central portion and the crystal outer peripheral portion is relaxed, the thermal stress generated in the vicinity of the solid-liquid interface is reduced, and cracking and dislocation generation of the single crystal 11 are prevented.

Next, the implementation results of this embodiment will be described.
The basic growing conditions were the same as in the previous embodiment.

The heat insulator 15 has a thickness of 10 mm and an inner diameter of 360 m.
m, and the thickness of the graphite support 16 supporting this is 5 mm. The conventional results without using the heat retaining body 15 are as described above. The heat insulator 15 is used, and its height DL and the height DH from the surface of the melt to the lower end of the heat insulator
Was changed variously. Height D from the melt surface to the bottom of the heat insulator
H was made to match the height from the melt surface to the lower end of the heat shield. Table 2 shows the results when 5 pieces were grown for each heat retaining body 15.

[0049]

[Table 2]

In Examples 1 to 3 of the present invention, the height of the heat retaining body is set to DL.
(Mm) and the height from the melt surface to the bottom of the heat retaining body is D
When H (mm), 70 ≦ 2.3 × DH + DL,
Further, it satisfies 3.6 × DH + DL ≦ 180. Furthermore, D
L = 30 to 70 mm and DH = 15 to 30 mm are satisfied. Even at a fairly high growth rate of 1.2 mm / min, the single crystal was not deformed or cracked, and the growth was stable.

The invention examples 4 and 5 are the second half of the crystal growth,
Crystal deformation occurred in the high-speed range of the growth rate of 1.1 to 1.2 mm / min, but the extent was slight, and the growth was possible.

In the comparative example, a heat insulator was used, but 3.6 ×
DH + DL ≦ 180 is not satisfied. Specifically, the height DH from the melt surface to the lower end of the heat retaining body is excessively large as compared with the height DL of the heat retaining body. It was difficult to grow due to crystal deformation.

When the growth rate was set to 1.5 mm / min, even if the cooling body 8 and the heat retaining body 15 were used together, the growth was impossible due to the remarkable deformation. However, in this state, crucible 3
A horizontal magnetic field of 3000 gauss was applied to the raw material melt 10 inside. Deformation was suppressed and it became possible to grow. In addition, cracking did not occur in pulling five, and only one of the five had dislocation.

FIG. 6 is a vertical cross-sectional view of the main part of a pulling furnace for producing a silicon single crystal showing another embodiment of the present invention.

As shown in FIG. 6, in the heat retaining body 15, the heat insulating material 15a can be reinforced by a shell 15b made of graphite or the like.

[0056]

As described above, the method and apparatus for producing a silicon single crystal of the present invention, when pulling the silicon single crystal from the raw material melt in the crucible by the CZ method, forcibly cool the pulled crystal, and By forcibly heating and / or maintaining the lower part of the crystal under the cooling part, crystal deformation is suppressed to enable high-speed growth, and heat at the solid-liquid interface, which is a problem in crystal cooling for the high-speed growth, becomes a problem. It is possible to effectively suppress the cracking of crystals and the generation of dislocations due to the increase in stress.

[Brief description of drawings]

FIG. 1 is a diagram schematically showing a temperature distribution in a crystal plane when ΔT is changed.

FIG. 2 is a vertical cross-sectional view of a pulling furnace for producing a silicon single crystal showing an embodiment of the present invention.

FIG. 3 is a perspective view of a main part of the pulling furnace.

FIG. 4 is a vertical cross-sectional view of a pulling furnace for producing a silicon single crystal showing another embodiment of the present invention.

FIG. 5 is a vertical sectional view of a main part of the pulling furnace.

FIG. 6 is a vertical cross-sectional view of a main part of a pulling furnace for producing a silicon single crystal showing still another embodiment of the present invention.

[Explanation of symbols]

1 Main chamber 2 pull chamber 3 crucible 4 heater 5 Support shaft 6 insulation 7 Heat shield 8 Cooling body 9 heating element 10 Raw material melt 11 single crystal 12 Lifting shaft 13 Seed chuck 15 heat retaining body

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Tsuyoshi Nakamura             2201 Kamioda, Oita, Kohoku-cho, Kishima-gun, Saga Prefecture             Sumitomo Metal Industries, Ltd. Sitix Business Division             Within F term (reference) 4G077 AA02 BA04 CF10 EG15 EG19                       EG20 EJ02 HA12 PE22 PE27

Claims (13)

[Claims] 1. When pulling a silicon single crystal from a raw material melt in a crucible by the Czochralski method, the pulled crystal is forcibly cooled, and the lower part of the crystal below the cooling part is forcibly heated. Silicon single crystal manufacturing method. 2. When pulling a silicon single crystal from a raw material melt in a crucible by the Czochralski method, the pulled crystal is forcibly cooled and the lower portion of the crystal below the cooling part is kept warm. Single crystal manufacturing method. 3. The method for producing a silicon single crystal according to claim 1, wherein the crystal diameter is A (mm) and the crystal growth rate is 270 / A (mm / min) or more. 4. The method for producing a silicon single crystal according to claim 1, 2 or 3, wherein the crystal diameter is 300 mm or more. 5. The method according to claim 1, 2, 3 or 4 for applying a magnetic field.
The method for producing a silicon single crystal according to 1. 6. A cooling body for forcibly cooling a silicon single crystal pulled from a raw material melt in a crucible by the Czochralski method, and a heating body for forcibly heating a lower portion of the silicon single crystal below the cooling body. An apparatus for producing a silicon single crystal, comprising: 7. The silicon single crystal manufacturing apparatus according to claim 6, wherein the cooling body and the heating body are arranged inside a heat shield that surrounds the silicon single crystal. 8. The height from the melt surface to the upper end of the heating element (H
H + HL) is a crystal radius or less, The silicon single crystal manufacturing apparatus of Claim 6 or 7. 9. A cooling body for forcibly cooling a silicon single crystal pulled from a raw material melt in a crucible by the Czochralski method, and a heat insulating body for keeping a lower part of the silicon single crystal under the cooling body. An apparatus for producing a silicon single crystal, characterized by: 10. The silicon single crystal manufacturing apparatus according to claim 9, wherein the cooling body and the heat retaining body are arranged inside a heat shield surrounding the silicon single crystal. 11. When the height of the heat retaining body is DL (mm) and the height from the melt surface to the lower end of the heat retaining body is DH (mm), 70 ≦ 2.3 × DH + DL, and 3.6. × DH
The silicon single crystal manufacturing apparatus according to claim 9 or 10, which satisfies + DL ≦ 180. 12. The height DL of the heat retaining body is 30 to 70 mm, and the height DH from the melt surface to the lower end of the heat retaining body is 15 to.
The silicon single crystal manufacturing apparatus according to claim 11, having a length of 30 mm. 13. The height WL of the cooling body is 50 mm or more, and the height WH from the melt surface to the lower end of the cooling body is 400 m.
m or less, claim 6, 7, 8, 9, 10, 11 or 1
2. The silicon single crystal manufacturing apparatus according to 2.