JP2002353404A - Intelligent power switch unit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make compact in size a control substrate in an intelligent power switch unit, having a control circuit for imparting a signal for turning on and off of switching element. SOLUTION: A drain D of a MOSFET 190 is connected to a first lead frame 150 connected to an input terminal 170, and the MOSFET 190 is fixed. A source S of the MOSFET 190 is connected to a second lead frame 160, connected to an output terminal 180 via a bonding wire 191. The control substrate 110 mounts a control IC 120 for controlling a switching operation or the like and is connected to a terminal 130 for inputting or outputting various type signals. The substrate 110 imparts an on/off signal to the gate G of the MOSFET 190. Base ends of the substrate 110 and the frame 150 are resin-sealed by a resin mold 400.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an intelligent power switch device capable of turning on and off a power circuit.

[0002]

2. Description of the Related Art Conventionally, in an automobile, an abnormal current protection device such as a fuse is provided between a power supply and a load in order to protect a load such as a headlamp or a circuit element from an abnormal current flowing when a circuit is short-circuited. Is provided.

An example of such a fuse for a vehicle is a blade type fuse disclosed in US Pat. No. 4,023,264. Blade type fuses are widely used in the electric system of automobiles, and in many cases, they have slow blow characteristics (the fuse does not blow due to an instantaneous abnormal current, but if the abnormal current continues to flow for a predetermined time or more, (The characteristic of fusing). Therefore, when a so-called dead short circuit in which a large current flows continuously on the circuit occurs, the load can be protected by blowing the blade type fuse.

[0004] However, when a so-called rare short-circuit in which an abnormal current flows intermittently occurs instead of a dead short-circuit, the fuse may not be blown. That is, in the case of a rare short, although the temperature of the blown portion of the fuse rises due to Joule heat caused by the intermittent abnormal current, the current flows only intermittently. Will saturate.

In such a case, there has been a problem that a short-circuit current exceeding an allowable value flows intermittently in an electric wire or the like. Therefore, the present applicant has already proposed in Patent Application No. 2000-53511 an intelligent power switch device capable of coping with the above-described rare short circuit.

This device includes, for example, a control IC which constantly detects a voltage between both terminals of a fuse provided in a power circuit, and a current detected by the control IC, that is, a current flowing through the power circuit has a rare short level abnormality. It is determined whether the current is current. If the current is a rare short level abnormal current, the control IC
And the like, so as to cut off the power circuit.

In this device, the control IC and the switching element are arranged on the same control board. Since the switching element is arranged on the control board, the power circuit is also arranged on the control board. . That is, a power circuit is provided on the control board, and an input terminal (power terminal) for the power circuit, an output terminal (power terminal), and a signal input / output terminal for the control IC are provided as board attachment terminals.

[0008]

However, since the power circuit is arranged on the control board as described above, a large board area is required and there is a problem that the board becomes large.

As a measure to solve this problem, it is conceivable that only the power circuit is constituted by a bus bar made of a copper plate or the like. However, in the case of this configuration, on the control board on which the control IC and the switching element are mounted, when connecting the terminal on the board side to the bus bar, if soldering is performed with ordinary solder,
With ordinary solder, there is a problem that it is weak in heat resistance. Therefore, if high-temperature solder is used instead of ordinary solder, the high-temperature solder has a problem that workability deteriorates due to the complicated soldering work.

[0010] In addition, instead of soldering, connection between the terminal on the substrate side and the bus bar may be performed by welding, but the welding itself may cause electrical and thermal destruction.

An object of the present invention is to provide a power circuit as described above, a switching element for turning on and off the power circuit,
It is an object of the present invention to provide an intelligent power switch device provided with a control circuit such as a control IC for giving a signal for turning on and off to a switching element and capable of reducing the size of a control board.

[0012]

In order to achieve the above object, the invention according to claim 1 is electrically connected to an input terminal,
A first lead frame including a mounting portion to which the switching element is fixed and electrically connected to an output terminal, and electrically connected to an output section of the switching element; A second lead frame including the connected portion, and a control circuit for controlling a switching operation and abnormality determination are mounted, and are electrically connected to a signal terminal for inputting or outputting various signals, and a signal of the switching element is provided. A control board electrically connected to apply an on / off signal to the input section, wherein the control board, the mounting and fixing portion of the first lead frame, and the connecting portion of the second lead frame are resin-encapsulated. The gist of the invention is an intelligent power switch device.

According to a second aspect of the present invention, in the first aspect, the input terminal is formed integrally with the first lead frame, and the output terminal is formed integrally with the second lead frame. Features.

[0014] The invention of claim 3 is claim 1 or claim 2.
Wherein the input terminal and the output terminal are terminals for a vehicle-mounted connector, and the various signal terminals are terminals for a board.

According to a fourth aspect of the present invention, there is provided the first to third aspects.
In any one of the above, a plurality of switching elements are mounted on the first lead frame, the control board has a function corresponding to the number of the switching elements, and the number of the second lead frames depends on the function. It is characterized in that the number is provided.

The invention according to claim 5 is the invention according to claims 1 to 4.
In any one of the above, the heat dissipation board is attached to the control board. According to a sixth aspect of the present invention, in any one of the first to fifth aspects, a direction in which the input terminal and the output terminal extend is 180 degrees opposite to a direction in which the various signal terminals extend. It is characterized by being.

The invention according to claim 7 is the invention according to claims 1 to 6.
In any one of the above, a casing is formed by the resin encapsulation. According to an eighth aspect of the present invention, in any one of the first to seventh aspects, the switching element is a MOS FET.

The invention of claim 9 is the invention of claims 1 to 8
In any one of the above, the heat dissipation substrate is a heat sink.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of an intelligent power switch device IPS (hereinafter referred to as a switch device) embodying the present invention will be described below with reference to the drawings.

FIG. 1 is an external perspective view showing an overall image of the intelligent power switch device IPS. FIG. 2 (a)
Is a partially cutaway perspective view, FIG. 2B is an enlarged perspective view of a main part, and FIG. 3 is an exploded perspective view.

The switch device IPS has two sets of intelligent power switch units (hereinafter simply referred to as switch units).
100, 200, heat dissipation board 300 and switch section 10
There is provided a resin mold part 400 in which 0, 200 is fixed to the heat dissipation board 300 by molding.

(Switch Unit 100) The switch unit 100 will be described. The heat radiating substrate 300 includes a substantially flat base portion 310 and a plurality of heat radiating fins 320 protruding from the base portion 310. The entire side surface of the anti-radiation fin of the base portion 310 is formed flat and covered with an insulating film (not shown). The heat dissipation board 300
It is composed of a heat sink provided with a radiation fin 320.

The switch section 100 includes a control board 110, a first
Lead frame 150, multiple second lead frames 16
0 is provided. The first lead frame 150 is disposed on one side of the heat dissipation substrate 300 via the insulating film. The first lead frame 150 is formed in a planar L-shape, and is arranged parallel to a side surface of the base portion 310 on the insulating film side. The first L-shaped first
The base end of the lead frame 150 is arranged along the longitudinal direction of the base 310, and a plurality of MOS FETs 190 are fixed on the upper surface thereof by soldering. In the present embodiment, four MOS FETs 190 are arranged along the longitudinal direction of the base 310.

The MOS FET 190 corresponds to a switching element. Further, the base end of the first lead frame 150 corresponds to an attachment fixing portion for attaching and fixing the switching element.

Hereinafter, in order to distinguish the respective MOSFETs 190, they may be referred to as a first semiconductor relay TR1 to a fourth semiconductor relay TR4, respectively. The first to fourth semiconductor relays TR1 to TR4 correspond to the control unit 5 (see FIG. 5).

The drain D of the MOS FET 190
Is provided on a side surface facing the first lead frame 150, and is electrically connected to the first lead frame 150.

One end of the first lead frame 150 protrudes laterally from the base portion 310, and its tip is formed at right angles so as to extend in the same direction as the extending direction of the radiation fins 320 as shown in FIG. It is bent. This bent portion constitutes the input terminal 170.

Each second lead frame 160 is arranged in parallel with the side surface of the base portion 310 on the insulating film side. In addition, the base end of each second lead frame 160 is arranged to be orthogonal to and separated from the base end of the first lead frame 150, and each MOS FET 19
0 are arranged to face each other. The source S of the MOSFET 190 is electrically connected to the base end of the second lead frame 160 via a bonding wire 191.

The base end of the second lead frame 160 connected to the bonding wire 191 corresponds to a connection portion of the second lead frame 160. As shown in FIG.
At the base end of the lead frame 160, a notch is formed from the side in an L-shape at a position further from the tip than the connection point of the bonding wire 191, so that a narrow portion 160a is formed as a fuse and a current sensor. ing.

Hereinafter, the first current sensor F1 to the fourth current sensor F are arranged in the order in which the narrow portion 160a approaches the input terminal 170 side.
Four. The first current sensor F1 to the fourth current sensor F4 constitute the detection unit 3 (see FIG. 5).

The input end of each narrow portion 160a (the connection side of the second lead frame 160, that is, the + terminal) is connected to the input connection terminals of "+ S1" to "+ S4" of the control board 110. ing. Also, the output end side (-side terminal) of each narrow portion 160a is connected to "-S1" to "-S1" of the control board 110.
S4 "is connected to the input connection terminal.

The tip of the second lead frame 160 projects laterally from the base 310, and the tip of the second lead frame 160 is shown in FIG.
As shown in FIG. 3, the heat radiation fin 320 is bent at a right angle so as to extend in the same direction as the extending direction. This bent portion constitutes the output terminal 180. Also, input terminal 17
0 and each output terminal 180 are arranged side by side so as to be included in the same virtual plane.

As described above, the first lead frame 150 provided with the input terminal 170 and the second lead frame 160 provided with the output terminal 180 form a part of a power circuit through which a large current flows.

The first lead frame 150 and each of the second lead frames 160 are formed by punching and forming a common metal plate with a press. At this time, a part between the opposing side portions is formed. They are connected by a connecting piece to be integrated. Immediately before the resin molding, the connecting pieces are removed to be separated from each other.

The drain D of the MOSFET 190 corresponds to the input of the switching element, and the source S corresponds to the output of the switching element. As shown in FIG. 2A, the control board 110 is disposed above the first lead frame 150 and the second lead frame 160 so as to extend along the longitudinal direction of the base 310. A control IC 120 as a control circuit is mounted on the control board 110.
Also, on one side of the control board 110 along the longitudinal direction,
It has multiple input connection terminals.

In the present embodiment, the input connection terminals are denoted by symbols "+ S1" to "+ S4" and "-S1" to "+ S4".
"-S4" is added (see FIG. 5). Note that, in FIG. 3, only some of the terminals are denoted by reference numerals.

Similarly, on one side along the longitudinal direction,
"MOS1" to "MOS4" terminals are formed (see FIGS. 2B and 4). “MOS1” terminal to “MO
The “S4” terminal is connected to the MO via the bonding wire 192.
It is connected to the gate G of the SFET (semiconductor relay) 190.

The gate G corresponds to a signal input section of the switching element. As shown in FIGS. 3 and 4, on the control board 110, on one side, “SW1” terminal to “SW4” terminal, “IG1” terminal, “GND” terminal and the like are formed. . “SW1” terminal to “SW4” terminal,
The “IG1” terminal and the “GND” terminal have terminal 1 respectively.
30 proximal ends are connected. “SW1” terminal to “SW
The terminal 130 connected to the “4” terminal and the “IG1” terminal corresponds to a signal terminal of the control board 110.

The terminal 130 has an L-shape as shown in FIG.
It extends in the opposite direction by 0 degrees. The tips of the terminals 130 are arranged side by side so as to be included in the same virtual plane.

A power input terminal (not shown) is formed on a surface of the control board 110 facing the first lead frame 150, and is electrically connected to the first lead frame 150.

(Switch section 200) The switch section 10
0 is a one-input four-output configuration.
0 is different in that it has 1 input and 9 outputs.
However, since the basic connection configuration and the configuration of the members of the switch unit 200 are the same as those of the switch unit 100, the same or corresponding components of the switch unit 200 are denoted by reference numerals 200. Is assigned the lower two digits of the switch unit 100.

Since the switch unit 200 has a one-input and nine-output configuration as described above, unlike the switch unit 100,
The base end of the first lead frame 250 to which the FET 290 is connected has an extension 250a extending in the longitudinal direction. An additional 5 is provided on one side of the extension 250a.
Pieces of the second lead frame 260 are the first lead frame 1
It is arranged to extend laterally in parallel with 60.

The distal ends of these second lead frames 260 are bent at right angles so as to extend in a direction 180 degrees opposite to the extending direction of the radiation fins 320 as shown in FIG. This bent portion is connected to the output terminal 280 of the power line.
(Hereinafter, reference numeral 280A is attached to distinguish from other output terminal 280 extending in the same direction as output terminal 180.)
Is composed.

A plurality (five in the present embodiment) of MOS FETs 290 (hereinafter, a number larger than the number of switch units 100 is denoted by reference numeral 290A) are further fixed on the upper surface of the extension part 250a by soldering. Have been. In the present embodiment, five MOS FETs 290A are arranged along the longitudinal direction of the base 310.

The MOS FET 290A corresponds to a switching element. Further, the extension 250a corresponds to a mounting fixing portion for mounting and fixing the switching element. The MO
The drain D of the SFET 290A is provided on a side surface facing the extension 250a, and is electrically connected to the side surface.

The input terminal 170 and each output terminal 18
0, the input terminal 270, and each output terminal 280 are arranged side by side so as to be included in a common virtual plane. The tips of the terminal 130 and the terminal 230 are arranged side by side so as to be included in the same common virtual plane.

The switch sections 100 and 200 are molded by the resin mold section 400 to form the base section 31.
0 and fixed. Also, as shown in FIG. 1, the terminals 130 and 230, the input terminals 170 and 270, and the output terminals 180, 280 and 280A are
It is arranged to be exposed from zero.

That is, the resin mold portion 400
The control board 110, the base end (attachment fixing part) of the first lead frame 150, and the base end (connection part) of the second lead frame 160 are sealed with resin. Resin mold part 40
0 corresponds to a housing.

The input terminal 270 corresponds to the input terminal of the control board 210, and the output terminals 280 and 280A correspond to the output terminals of the control board 210, respectively. SW1 "terminal to" SW
The terminal 230 connected to the “4” terminal, the “IG1” terminal, and the “GND” terminal corresponds to a signal terminal of the control board 210.

The MOS FETs 290 and 290A correspond to switching elements. Although not shown, MOS F
The drain D of the ETs 290 and 290A corresponds to the input of the switching element, and the source S corresponds to the output of the switching element. Also, the gate G of the MOS FETs 290 and 290A
Corresponds to the signal input section of the switching element. Also, the first
Base end of lead frame 250 and extension 250a
Corresponds to a mounting fixing portion for mounting and fixing the switching element.

The base end of the second lead frame 260 connected to the bonding wire 291 corresponds to a connection of the second lead frame. (Connection Configuration with Other Circuits) FIGS. 7 and 8 show connection configurations of the terminals 130 and 230, the input terminals 170 and 270, and the output terminals 180 and 280 in the switch device IPS with other circuits.
This will be described with reference to FIG. FIG. 7 shows the resin mold section 4.
Cover 4 made of a non-conductive synthetic resin outside
10 shows a state where 10 is further exteriorized. Cover 410
The input terminal 170,
A box-shaped connector housing 420 is formed so as to surround the output terminal 180, the input terminal 270, and the output terminal 280.

In this embodiment, as shown in FIG. 7, the input terminals 170 and 27 of the switch units 100 and 200 are used.
0, a single connector C1 is connected to the output terminals 180 and 280, and other circuits are connected through the connector C1.

The terminals 130 and 230 extending in the direction opposite to the input terminals 170 and 270 and the output terminals 180 and 280 of the switch sections 100 and 200 by 180 degrees are penetrated with respect to the substrate 500 as shown in FIG. It is mounted as The terminals 130 and 230 penetrating the substrate 500 are connected as through terminals to the connector C2 having the female connection terminal of 16 poles with the substrate 500 interposed. As a result, the substrate 500 is placed on the base 310 having the heat dissipating fins 320 with respect to the resin mold 400.
It is possible to indirectly overlap via.

As described above, the input terminals 170 and 270 and the output terminals 180 and 280 are terminals (in-vehicle connector terminals) that can be connected to the vehicle connector C1. (Circuit Configuration) Next, a circuit configuration of the switch device IPS will be described with reference to FIGS.

In the present embodiment, the switch unit 100 of the switch device IPS constitutes a headlight drive control device 1 for turning on or off a headlight for an automobile.
Further, the switch unit 200 constitutes a part of a drive control device (not shown) for other electric components mounted on the automobile. Note that the switch unit 200 includes the switch unit 1
Since it has the same function as 00, the function of the switch unit 100 will be described below, and the description of the function of the switch unit 200 will be omitted.

In FIG. 5, the headlight drive control device 1 is provided for an ignition (IG) switch 6, a light control switch unit 7, a right headlight 8, and a left headlight 9.

First, peripheral circuits of the headlight drive control device 1 will be described. The IG switch 6 has a movable contact 6
a is grounded, and the fixed contact 6b is
1 "terminal. And IG switch 6
When the movable contact 6a shown in FIG. 5 is not connected to the fixed contact 6b (for example, when an off operation is performed upon getting off), the H level “IG1 IN” signal (off signal) is changed to “IG1”. Output to the terminal. Further, when the movable contact 6a is connected to the fixed contact 6b (for example, when an on operation is performed for riding), an L level “IG1 IN” signal (ON signal) is output to the “IG1” terminal.

The light control switch section 7 includes a plurality of switches (a head switch 11, a changeover switch 12,
Flash switch 13). The setting of the light control switch unit 7 can be changed to an OFF mode, an LO mode, a HI mode, and a FLSH mode.

The light control switch section 7 is turned off.
When the mode is set, as shown in FIG.
The movable contact 11a of the head switch 11 is a fixed contact 11b
And the movable contact 12a of the changeover switch 12
Are connected to either the LO-side fixed contact 12b or the HI-side fixed contact 12c. Also, the flash switch 13
Of the movable contact 13a are first and second fixed contacts 13b, 13
It is open to both of c.

FIG. 5 shows a state in which the movable contact 12a is connected to the LO-side fixed contact 12b. When the setting of the light control switch unit 7 is changed to the LO mode, the movable contact 11a of the head switch 11 is changed.
Is connected to the fixed contact 11b, and the movable contact 12a of the changeover switch 12 is connected to the LO-side fixed contact 12b. or,
The movable contact 13a of the flash switch 13 is opened to both the first and second fixed contacts 13b and 13c.

When the light control switch section 7 is set to H
When the setting is changed to the I mode, the movable contact 11a of the head switch 11 is connected to the fixed contact 11b, and the movable contact 12a of the changeover switch 12 is connected to the HI-side fixed contact 12c. The movable contact 13a of the flash switch 13
Is open to both the first and second fixed contacts 13b and 13c.

Further, the light control switch section 7
Is changed to the FLSH mode, the movable contact 11a of the head switch 11 is opened to the fixed contact 11b, and the movable contact 12a of the changeover switch 12 is switched to either the LO-side fixed contact 12b or the HI-side fixed contact 12c. Connected. The movable contact 13a of the flash switch 13 is connected to both the first and second fixed contacts 13b and 13c.

The right headlight 8 is a LO side lamp 8a.
And the HI-side lamp 8b. LO side lamp 8a
Is connected to the negative terminal of the first current sensor F1 in the detection unit 3, and the other terminal is grounded. H
One terminal of the I-side lamp 8b is connected to the negative terminal of the second current sensor F2 in the detection unit 3, and the other terminal is grounded.

On the other hand, the left headlight 9 has a LO side lamp 9a and a HI side lamp 9b. One terminal of the LO-side lamp 9a is connected to the negative terminal of the third current sensor F3 in the detection unit 3, and the other terminal is grounded. One terminal of the HI-side lamp 9b is also connected to the negative terminal of the fourth current sensor F4, and the other terminal is grounded.

(Headlight Drive Controller 1) Next, the circuit configuration of the headlight drive controller 1 will be described. The headlight drive control device 1 includes a switch unit 100
And a control IC 120 mounted on the control board 110.

The detecting section 3 includes first to fourth current sensors (in this embodiment, all sensors having a fuse function) F1 to F4. The control unit 5 will be described.

+ Terminal of battery power supply and LO side lamp 8a
The drain D / source S of the first semiconductor relay TR1 and the first current sensor F1 are connected in series.
The drain D and source S of the second semiconductor relay TR2 and the second current sensor F2 are connected in series between the + terminal and the HI-side lamp 8b. The drain D and source S of the third semiconductor relay TR3 and the third current sensor F3 are connected in series between the + terminal and the LO-side lamp 9a. Between the + terminal and the HI-side lamp 9b, the drain D / source S of the fourth semiconductor relay TR4 and the fourth
The current sensor F4 is connected in series.

+ Terminal of battery power supply and LO side lamp 8a
Between the + terminal and the HI-side lamp 8b,
Circuits between the terminal and the LO-side lamp 9a and circuits between the + terminal and the HI-side lamp 9b correspond to power circuits, respectively.

Gate G of each semiconductor relay TR1 to TR4
Are “MOS1” terminals to “MO” terminals of the control board 110, respectively.
S4 "terminal. Each current sensor F1 to F4
Are electrically connected to the “+ S1” to “+ S4” terminals of the control board 110, respectively.
In addition, the-side terminals are respectively "-S1" terminal to "-S4".
It is electrically connected to the terminal.

The + terminal of the battery power supply is connected to the control board 1
10 is connected to a “+ B” terminal, and a negative terminal (shown by a ground symbol in FIG. 5) of the battery power supply is connected to the control board 11.
0 is connected to the “GND” terminal.

Next, the control IC 120 will be described with reference to FIG. Hereinafter, the control IC 120 is referred to as a determination unit. The determination unit 120 (control IC) includes a power supply circuit 21, a current monitor circuit 22, an abnormality detection determination circuit 23, a MOS driver / charge pump circuit 24, an external switch input circuit 25, and a reset circuit 26. The entire structure is made into one chip (custom IC).

The power supply circuit 21 is connected to the “+ B” terminal,
This is for supplying electric power from a battery to each of the circuits 22 to 26 and operating each of the circuits 22 to 26 based on the electric power.

Current monitor circuit 22 as current detection means
Are connected to the “+ S1” terminal to the “+ S4” terminal, the “−S1” terminal to the “−S4” terminal, and are provided with a differential amplifier circuit (four in total) for each circuit (each of the current sensors F1 to F4). It has. Each differential amplifier circuit inputs the potential of each part from both ends (in the case of F1, the positive terminal and the negative terminal) of each corresponding current sensor F1 to F4, and calculates the difference between them, that is, the current. The voltage across the sensor is amplified, and the amplified voltage is output to the abnormality detection determination circuit 23 as a voltage signal for each circuit.

Each voltage signal is determined by the impedance of the current sensor itself, the current value of the current flowing through the current sensor, and the amplification factor of the differential amplifier circuit. The magnitude of the current value can be known by knowing the magnitude of the signal.

An abnormality detection judgment circuit 2 as an abnormality detection means
Reference numeral 3 includes a CPU, a ROM, a RAM (not shown), and comparison circuits (four in total) for each circuit. Each comparing circuit compares whether or not the voltage signal of the corresponding circuit is larger than a predetermined voltage threshold value for performing the rare short determination, and outputs the comparison result to the CPU. CPU
According to the “abnormality detection determination control program” stored in the ROM, the characteristic value of the current flowing through each current sensor is
It is determined whether or not the value is larger than the reference characteristic value stored in the ROM in advance. Then, the CPU sends the determination result of each circuit to the MO.
Output to the S driver / charge pump circuit 24.

That is, when the characteristic value of the current flowing through the current sensor is equal to or less than the reference characteristic value (normal state), the CP
U outputs a normal current signal to a semiconductor relay drive circuit (described later) corresponding to a normal circuit in the MOS driver / charge pump circuit 24.

On the other hand, when the characteristic value of the current flowing through the current sensors F1 to F4 is larger than the reference characteristic value (in an abnormal state), the CPU responds to the abnormal circuit in the MOS driver / charge pump circuit 24. Outputs an abnormal current signal to the semiconductor relay drive circuit.

The characteristic values in the present embodiment are the magnitude of the current value of the current flowing through each of the current sensors F1 to F4, the duration of the abnormal level when the magnitude of the current value is at the abnormal level, and the magnitude of the current value. Of ON time per predetermined time when the value is abnormal level (DUTY
Ratio), the number of times of passing through the abnormal level per predetermined time when the magnitude of the current value is at the abnormal level.

External switch input circuit 2 as input means
5 is connected to the “IG1” terminal, the “SW1” terminal to the “SW4” terminal. External switch input circuit 25 is IG
When the switch 6 is turned on with the ride, “IG1
When the “IN” signal switches from the H level to the L level, an “IG1” signal is output to the reset circuit 26. When the "IG1" signal is input, the reset circuit 26 outputs a reset signal to the abnormality detection determination circuit 23, thereby resetting the determination processing (detection operation) of the abnormality detection determination circuit 23.

On the other hand, when the light control switch section 7 is operated, the external switch input circuit 25 outputs the “HEAD” signal, the “LO” signal, and the “H” signal from the switches 11 to 13.
When the "I" signal and the "FLSH" signal are input, the signals (H level or L level) are combined according to the level of each signal.
The mode (OFF mode or the like) of the light control switch unit 7 is determined. Then, depending on the mode, MO
A switch-on signal or a switch-off signal is output to each semiconductor relay drive circuit (described later) of the S driver / charge pump circuit 24.

The MOS driver / charge pump circuit 24 as the power supply control means includes a “MOS1” terminal to a “MOS1” terminal.
4 "terminals, and each circuit has a semiconductor relay drive circuit (four in total). Each of the semiconductor relay drive circuits corresponds to each of the corresponding semiconductor relays TR1 to TR4.
A driving permission signal or a driving stop signal is output to the gate G. That is, when a switch-off signal is input from the external switch input circuit 25, regardless of the normal current signal or the abnormal current signal from the abnormality detection determination circuit 23, the semiconductor relay drive circuit operates the gate G of the corresponding semiconductor relay. To output a drive stop signal. This drive stop signal is a voltage (approximately 0 V) when boosting by a charge pump (not shown) is stopped. When the drive stop signal is input to the gate G, the semiconductor relay is turned off.

On the other hand, when a switch-on signal is input from the external switch input circuit 25 and a normal current signal is input from the abnormality detection / judgment circuit 23, the semiconductor relay drive circuit operates the gate G of the corresponding semiconductor relay. To output a drive permission signal. The drive permission signal is a predetermined voltage boosted by the charge pump. When the drive permission signal is input to the gate G, the semiconductor relay is turned on. That is, the predetermined voltage is higher than the threshold voltage (ON voltage) of the semiconductor relay.

When a switch-on signal is inputted from the external switch input circuit 25 and a current abnormality signal is inputted from the abnormality detection / judgment circuit 23, the semiconductor relay drive circuit operates the gate G of the corresponding semiconductor relay. To output a drive stop signal. In this case, the boosting by the charge pump is stopped, a drive stop signal is input to the gate G of the semiconductor relay, and the semiconductor relay is turned off.

In the following description, the first current sensor F1, the first semiconductor relay TR1, the right headlight 8
The first circuit including the LO side lamp 8a, the differential amplifier circuit of the current monitor circuit 22 corresponding thereto, the comparison circuit of the abnormality detection determination circuit 23, the semiconductor driver circuit of the MOS driver / charge pump circuit 24, etc. . On the other hand, the second
The current sensor F2, the second semiconductor relay TR2, the HI-side lamp 8b, the differential amplifier circuit corresponding thereto, the comparison circuit,
The second circuit includes the semiconductor relay drive circuit and the like.

Also, the third current sensor F3, the third semiconductor relay TR3, the LO side lamp 9a of the left headlight 9,
A third circuit including a differential amplifier circuit, a comparison circuit, a semiconductor relay drive circuit, and the like corresponding thereto is referred to as a third circuit. Further, the fourth circuit includes the fourth current sensor F4, the fourth semiconductor relay TR4, the HI-side lamp 9b, and the corresponding differential amplifier circuit, comparison circuit, semiconductor relay drive circuit, and the like.

In the present embodiment, the “HEAD” signal, “L”
O, HI, FLSH, IG1
The "IN" signal corresponds to an external input signal, and the "HEAD" signal, the "LO" signal, the "HI" signal, and the "FLSH" signal each correspond to a predetermined input signal, and "IG1 IN" The signal corresponds to a reset trigger signal. On the other hand, the first to fourth circuits respectively correspond to predetermined external circuits.

(Operation of Headlight Drive Control Device 1) The operation of the headlight drive control device 1 will be described. First, when the light control switch unit 7 is set to the OFF mode, the switches 11 to 13 are turned off.
From the "SW1" terminal to the "SW4" terminal of the judgment unit 120, the "HEAD" signal of OFF and the "LO" of ON
A signal, an off "HI" signal, and an off "FLSH" signal are output. Then, the external switch input circuit 25 of the determination unit 120 outputs the combination of the levels of the signals (“HEA”).
D ”signal in order from H level, L level, H level, H level)
Mode is determined, and a switch-off signal is output to all the semiconductor relay drive circuits of the first to fourth circuits in the MOS driver / charge pump circuit 24.

Each semiconductor relay drive circuit outputs a drive stop signal to the gate G of each corresponding semiconductor relay TR1 to TR4 to turn them off. Therefore,
In the OFF mode, the lamps 8a, 8b, 9a, 9
b are all turned off.

Next, when the light control switch unit 7 is set to the LO mode, each of the switches 11 to 1
3 outputs an ON “HEAD” signal, an ON “LO” signal, an OFF “HI” signal, and an OFF “FLSH” signal to the “SW1” to “SW4” terminals, respectively.
The external switch input circuit 25 outputs a combination of the levels of the signals (L level, L level,
H level, H level), determines that the mode is the LO mode, outputs a switch-on signal to the semiconductor relay drive circuits of the first and third circuits, and switches off the semiconductor relay drive circuits of the second and fourth circuits. Output a signal.

The first and third semiconductor relay driving circuits include first and third semiconductor relays TR1 and TR3, respectively.
By outputting a drive permission signal to the gate G of the switch, they are turned on. On the other hand, the semiconductor relay driving circuits of the second and fourth circuits are second and fourth semiconductor relays TR2 and TR2, respectively.
By outputting a drive stop signal to the gate G of No. 4, they are turned off. Therefore, in the LO mode, the lamp 8
a, 9a are energized and turned on, and the lamps 8b, 9
b is turned off.

Next, when the light control switch section 7 is set to the HI mode, each of the switches 11 to 1
3 outputs the ON “HEAD” signal, the OFF “LO” signal, the ON “HI” signal, and the OFF “FLSH” signal to the “SW1” to “SW4” terminals, respectively.
The external switch input circuit 25 receives a combination of signal levels (L level, H level,
(L level, H level), it is determined that the mode is the HI mode, a switch-on signal is output to the semiconductor relay driving circuits of the second and fourth circuits, and a switch-off signal is output to the semiconductor relay driving circuits of the first and third circuits. Output a signal.

The semiconductor relay driving circuits of the second and fourth circuits are the second and fourth semiconductor relays TR2 and TR4, respectively.
By outputting a drive permission signal to the gate G of the switch, they are turned on. On the other hand, the semiconductor relay driving circuits of the first and third circuits are the first and third semiconductor relays TR1 and TR1, respectively.
The driving stop signal is output to the gate G of No. 3 to turn them off. Therefore, in the HI mode, the lamp 8
b, 9b are energized and turned on, and the lamps 8a, 9
a is turned off.

Next, when the light control switch section 7 is set to the FLSH mode, each switch 11
13 outputs an OFF “HEAD” signal, an ON “LO” signal, an ON “HI” signal, and an ON “FLSH” signal to the “SW1” terminal to “SW4” terminal, respectively. The external switch input circuit 25 determines that the mode is the FLSH mode from a combination of the levels of the signals (H level, L level, L level, L level in order from the “HEAD” signal). While the "FLSH" signal of ON is being output (while the movable contact 13a is connected to the first fixed contact 13b), the switch-on signal is output to all the semiconductor relay driving circuits of the first to fourth circuits. I do.

Each semiconductor relay drive circuit includes a movable contact 13
While a is connected to the first fixed contact 13b, a drive permission signal is output to the gate G of each of the first to fourth semiconductor relays TR1 to TR4 to turn them on. Therefore, in the FLSH mode, the movable contact 13a
While connected to the fixed contact 13b, the lamps 8a, 8
b, 9a, and 9b are all turned on.

Next, a description will be given of the operation involved in the case where the abnormality detection judgment circuit 23 makes a rare short judgment. As described above, when the light control switch unit 7 is set to each of the above modes, energization of a predetermined circuit among the first to fourth circuits is permitted for each mode, and energization of other circuits is cut off. . Here, the light control switch section 7 is set to the LO mode, and the first and third
It is assumed that energization of the circuit is permitted and energization of the second and fourth circuits is interrupted.

Then, a current flows through the current sensor of each circuit. That is, for example, a current corresponding to the load current of the lamps 8a and 9a flows through the current sensors of the first and third circuits, and no current flows through the current sensors of the second and fourth circuits (that is, the current value). Zero). Then, the voltage between both ends of the current sensor corresponding to the current is input to the current monitor circuit 22, and further, the abnormality detection determination circuit 23 determines whether the characteristic value of the current is normal or abnormal. Here, it is assumed that the characteristic value of the current flowing through the first circuit is abnormal, and the characteristic value of the current flowing through the other circuits is normal.

When the characteristic value of the current flowing through the first circuit is determined to be abnormal by the abnormality detection determination circuit 23, that is, when the current flowing through the first circuit is determined to be a rare short abnormal current. A current abnormality signal is output from the CPU of the abnormality detection determination circuit 23 to the semiconductor relay drive circuit of the first circuit in the MOS driver / charge pump circuit 24. Then, a drive stop signal is output from the semiconductor relay drive circuit of the first circuit to the gate G of the first semiconductor relay TR1, and the lamp 8a that has been lit up is extinguished. That is, the power supply to the first circuit in which the rare short abnormal current is flowing is cut off.

On the other hand, when the abnormality detection determination circuit 23 determines that the characteristic values of the currents flowing through the second to fourth circuits are normal, that is, the currents flowing through those circuits are not abnormal short-circuit currents. Is determined, a normal current signal is output from the CPU of the abnormality detection determination circuit 23 to the semiconductor relay drive circuits of the second to fourth circuits in the MOS driver / charge pump circuit 24. Then, the second to fourth
A drive permission signal is output from the semiconductor relay drive circuit of the circuit to each of the gates G of the second to fourth semiconductor relays TR2 to TR4, and the lamps 8b, 9a, and 9b are continuously lit.

If a dead short circuit occurs in at least one of the first to fourth circuits for some reason, a sensor with a fuse function is used for each of the current sensors F1 to F4. The current sensor of the abnormal circuit in which the short-circuit abnormal current has flown is blown by its own fuse function, and the current to the circuit is cut off.

Next, the operation of the reset circuit 26 will be described. When the IG switch 6 is once turned off and the vehicle is dismounted, and the IG switch 6 is turned on the next time the vehicle gets on, an ON “IG1 IN” signal is input to the external switch input circuit 25 via the “IG1” terminal. . Then, an “IG1” signal is output from the external switch input circuit 25 to the reset circuit 26, and a reset signal is output from the reset circuit 26 to the abnormality detection determination circuit 23,
The processing (detection operation) of the abnormality detection determination circuit 23 performed before the turning off of the IG switch 6 upon the previous getting off is reset.

As described above, when the characteristic value of the current flowing in any one or more of the first to fourth circuits is abnormal (occurrence of a rare short circuit), Predetermined measures (for example, wire replacement at the location where a rare short circuit occurs) are performed.

Then, when the IG switch 6 is turned on the next time the vehicle is boarded after replacing the electric wire at the location where the rare short circuit occurs, the ON “IG1 IN” signal is set to “IG1 IN”.
The signal is input to the external switch input circuit 25 via the “1” terminal. Then, the “IG1” signal is output from the external switch input circuit 25 to the reset circuit 26. Accordingly, a reset signal is output from the reset circuit 26 to the abnormality detection determination circuit 23, so that the reset signal is output before the IG switch 6 is turned off following the previous disembarkation (in this case, disembarkation for taking measures against the abnormality). The processing (detection operation) of the abnormality detection determination circuit 23 is reset.

Then, the light control switch section 7
Is set to the LO mode or the like, a detection operation is performed again by the abnormality detection determination circuit 23 in the same manner as described above. Here, when the state before the reset operation of the abnormality detection determination circuit 23 by the reset circuit 26 is performed is continued,
That is, when the abnormality is not improved, the power supply to the circuit is cut off in the same manner as described above.

If a dead short circuit occurs in any one or more of the first to fourth circuits, a predetermined measure for the abnormality (for example, replacement of a wire at a place where a dead short occurs, head replacement, etc.) The light drive control device 1 (replacement of a current sensor (fuse) or the like) is performed.

Next, effects of the present embodiment will be described. (1) In the present embodiment, the first lead frames 150 and 250 electrically connected to the input terminal 170
The drains D (input portions) of the OS FETs 190, 290, and 290A (switching elements) were electrically connected, and the MOSFETs 190, 290, and 290A were fixed to their base ends (attachment fixing portions). Output terminals 180, 28
0, 280A to the base end (connection part) of the second lead frame 160, 260 electrically connected to the MOS F.
Sources S (output units) of the ETs 190, 290, 290A were electrically connected via bonding wires 191, 291.

The control boards 110 and 210 control ICs 120 and 22 for controlling switching operation and abnormality determination.
0 (control circuit) and input various signals,
Alternatively, they were electrically connected to the terminals 130 and 230 for outputting. Control ICs 120 and 22 of control boards 110 and 210
0 inputs an on / off signal to the gates G (signal input units) of the MOS FETs 190, 290, and 290A.

The base ends of the control boards 110 and 210, the first lead frames 150 and 250, and the base end of the second lead frame 160 were sealed with a resin mold 400.

As a result, the power circuit (a circuit for passing a drive current to the right headlight 8 and the left headlight 9) through which a large current flows as described above is separated from the control boards 110 and 210, whereby the control boards 110 and 210 are separated. Since no power circuit is provided directly in the control board, the area of the control boards 110 and 210 does not require a space for the power circuit. Therefore, the size of the control boards 110 and 210 can be reduced accordingly. In addition, since it is possible to directly connect a connector, the number of bus bars and the like can be reduced, and the electric connection box can be reduced in size and weight.

(2) In this embodiment, the input terminals 170,
270 is formed integrally with the first lead frames 150 and 250, and the output terminals 180, 280 and 280A are formed integrally with the second lead frames 160 and 260.

Therefore, the input terminals 170 and 270 are connected to the first
Unlike the case where the lead terminals are formed separately from the lead frames 150 and 250 and the output terminals 180, 280 and 280A are formed separately from the second lead frames 160 and 260, the number of parts can be reduced, and Since there is no lead frame connection process, the number of assembly steps can be reduced. As a result, cost can be reduced.

(3) In the present embodiment, the input terminals 170,
270 and the output terminals 180, 280, 280A were used as terminals for automobiles (terminals for vehicle-mounted connectors). Terminal 1
30 and 230 were used as substrate terminals.

For this reason, the input terminals 170, 270 and the output terminals 180, 280, 280 constituting the power circuit
A can be connected to the connector C1. Terminal 13
0 and 230 can be connected to the signal input / output connector C2 by using them as board terminals.

(4) In this embodiment, the MOS FETs 190, 290, 2
A plurality of 90A (switching elements) were fixed. Then, the control substrates 110 and 210 include the MOS FET 190,
Control ICs 120 and 220 (control circuits) are provided so as to have functions according to the number of 290 and 290A. Also, the second
The number of the lead frames 160 and 260 is set according to the function.

As a result, MOS FETs 190 and 290
The power circuit can be turned on and off in accordance with the number of (switching elements). (5) In the present embodiment, the input terminals 150 and 250, the output terminals 180, 280, and 280A, the extension portions 250a and M
A heat dissipation substrate 300 is provided below the OS FETs 190, 290, and 290A.

As a result, the control ICs 120, 220, MO
The heat generated from various circuits such as the SFETs 190, 290, and 290A can be generated by the heat radiation substrate 300 and cooled.

(6) In this embodiment, the input terminals 170,
270 and the extending directions of the output terminals 180 and 280 are as follows.
The direction in which the terminals 130 and 230 extend was 180 degrees opposite.

For this reason, the connector C1 on the power circuit side
And the signal terminal connector C2 can be connected from the opposite direction. Also, unlike the power circuit, the terminals 130 and 230 only input and output minute signals. Therefore, even if the terminals 130 and 230 are attached through another substrate 500, the terminals 130 and 230 may Have no adverse effect.

Therefore, the substrate 500 can be mounted on the switch device IPS with confidence. (7) In the present embodiment, in addition to any of the above configurations (1) to (6), the resin mold 40
0 was formed to form a housing.

As a result, the control boards 110 and 210 on which the control ICs 120 and 220 are mounted, and the first lead frame 15
0, 250, second lead frame 160, 26
The base end of the zero can be integrated. Further, since the input terminals 170 and 270 and the output terminals 180 and 280 are fixed at their base ends, they can be integrally connected to a connector and hardly deform.

(8) In this embodiment, the MOS FET 1
90, 290, and 290A. As a result, the power circuit is turned on / off by the MOS FETs 190, 290, and 290.
A can be easily performed.

(9) In this embodiment, the heat radiating substrate 300 is a heat sink having the heat radiating fins 320. With this configuration, since the radiation fins 320 are provided, the radiation area is increased, and the radiation effect can be enhanced.

(10) In the present embodiment, as shown in FIG. 7, a connector C1 is connected to the input terminals 170 and 270 and the output terminals 180 and 280 to be power circuits. The heat can also be dissipated through the electric cable connected to the connector C1 via the connector C1.

Conventionally, as shown in FIG.
The MOS FET 610 is mounted thereon, and terminals 611, 612, and 613 provided on the substrate 600 are connected via leads to the drain and gate of the MOS FET 610.
The source was connected. And the terminal 61
The connector C3 was connected to 1,612,613. Since the terminals connected to the drain and the source constitute a part of the power circuit, the heat is radiated here centering on the substrate 600. Therefore, the substrate 600
There is a problem that other circuits provided in the above are easily affected by heat. In addition, there is a problem that the connection reliability of the connector connection to the substrate 600 is lacking.

In the present embodiment, the connection with the connector C1 is made not to the substrate but to the input terminals 170 and 270 and the output terminals 180 and 280 provided as connection terminals, so that the connection is made securely. be able to.

The MOS FETs 190, 290, 29
Since OA is connected and fixed to the first lead frames 150 and 250, heat can be dissipated from the first lead frames 150 and 250 formed of a metal plate via the heat radiation substrate 300. Therefore, the control boards 110 and 2
10 can be prevented from being adversely affected by heat.

(11) In this embodiment, the input terminal 17
0 and 270 and the output terminals 180 and 280 are integrated and arranged in the same direction.
Can be connected.

(12) In this embodiment, the input terminal 17
0, 270 and output terminals 180, 280 generate heat,
Since these terminals are in direct contact with the base 310 of the heat dissipation board 300, a heat dissipation effect can be obtained efficiently.

The above embodiment may be modified as follows. In the embodiment, the pair of switch units 100 and 20
However, any one of the switch units may be omitted, or three or four or more switch units may be provided.

That is, the number of input / output terminals and signal terminals and the number of switch units are not limited. In short, the number of input / output terminals and signal terminals and the number of switch units are changed according to the load circuit. What is necessary is just to match.

In the above embodiment, the control circuit
Although a one-chip control IC is employed, the control circuit may be formed by a logic circuit, or may be formed by discrete circuit elements.

In the above embodiment, the control IC 120
Although the ICs 220 are provided separately, both ICs may be integrated.
In this case, the control boards 110 and 210 are formed integrally.

In the above embodiment, the vehicle is an automobile, but may be another vehicle such as a truck. Further, the present invention may be applied to other electric products and the like. ○ In the above embodiment, the MOS is used as the switching element.
Although FETs are employed, other semiconductor relays may be used.

In the above embodiment, the narrow portion 160a integrated with the second lead frame 160 was formed as a fuse. However, as shown in FIG. May be connected between the base end and the connection piece 160b. In this case, connection piece 1
Reference numeral 60b corresponds to a connection portion of the second lead frame 160.

In the above embodiment, the characteristic value is the magnitude of the current value of the current flowing through each of the current sensors F1 to F4, the abnormal level continuation time when the magnitude of the current value is an abnormal level, The ratio of the ON time per predetermined time when the magnitude of the value is abnormal level (DUTY ratio), and the number of times of passing through the abnormal level per predetermined time when the magnitude of current value is abnormal level. However, the characteristic value at which the determination unit 120 detects an abnormality is
It is not limited to these characteristic values.

[0135]

According to the first to ninth aspects of the present invention, in the intelligent power switch device,
There is an effect that the size of the control board can be reduced.

According to the second aspect of the present invention, the number of parts can be reduced, and the number of assembly steps can be reduced because there is no step of connecting the terminal and the lead frame, so that the cost can be reduced. . In addition, the terminals can be arranged in the same direction, so that the terminals can be integrally connected to the connector.

According to the third aspect of the present invention, the input terminal and the output terminal constituting a part of the power circuit mounted on the vehicle can be connected to the connector. Further, the signal terminal can be connected to a signal input / output connector by using the signal terminal as a substrate terminal.

According to the fourth aspect of the invention, the power circuit can be turned on and off in accordance with the number of switching elements. According to the fifth aspect of the present invention, heat generated from various circuits such as a control circuit and a switching element can be radiated through the radiating substrate and cooled.

According to the sixth aspect of the present invention, the connector on the power circuit side and the signal terminal connector can be connected from opposite directions. Also, unlike the power circuit, the signal terminal only inputs and outputs a minute signal, so even if the signal terminal penetrates and attaches to another substrate, it adversely affects the circuit provided on the substrate. Therefore, the other substrate can be mounted on the switch device with confidence.

According to the seventh aspect of the present invention, the control board on which the control circuit is mounted, the mounting and fixing portion of the first lead frame, and the connecting portion of the second lead frame can be integrated. According to the eighth aspect of the present invention, the power circuit can be easily turned on / off by the MOS FET.

According to the ninth aspect of the present invention, the heat radiating area can be increased by the heat sink, and the heat radiating effect can be enhanced.

[Brief description of the drawings]

FIG. 1 is an external perspective view showing an overall image of an intelligent power switch device IPS.

2A is a partially cutaway perspective view, and FIG. 2B is an enlarged perspective view of a main part.

FIG. 3 is an exploded perspective view of the same.

FIG. 4 is an enlarged explanatory view of a main part.

FIG. 5 is an electric circuit diagram showing an electric configuration of the headlight drive control device.

FIG. 6 is an electric block circuit diagram showing an electric configuration of the determination unit.

FIG. 7 is a perspective view when a connector is connected.

FIG. 8 is an explanatory diagram of a case where substrates 500 are stacked.

FIG. 9 is an explanatory diagram of another embodiment.

FIG. 10 is an explanatory diagram of connector connection to a conventional board.

[Explanation of symbols]

110, 210 ... control board, 120, 220 ... control IC
(Control circuit), 130, 230 ... signal terminal (substrate terminal), 150 ... first lead frame, 160 ... second lead frame 170, 270 ... input terminal, 180, 280 ... output terminal, 190, 290 ... MOS FET (Switching element), 300: heat-dissipating substrate, 400: resin molded part (housing) D: drain (input part), S: source (output part), G:
Gate (signal input section).

Claims (9)

[Claims] A first lead frame that is electrically connected to an input terminal, electrically connects an input portion of the switching element, and includes a mounting fixing portion to which the switching element is fixed; A second lead frame that includes a connection portion that is connected and electrically connected to an output portion of the switching element, and a control circuit that controls a switching operation and abnormality determination, and that inputs and outputs various signals. A control board electrically connected to a signal terminal and electrically connected to apply an on / off signal to a signal input section of the switching element; and And a connection part of the second lead frame is sealed with resin. 2. The intelligent device according to claim 1, wherein the input terminal is formed integrally with a first lead frame, and the output terminal is formed integrally with a second lead frame. Power switch device. 3. The intelligent power switch device according to claim 1, wherein the input terminal and the output terminal are terminals for a vehicle-mounted connector, and the various signal terminals are terminals for a board. 4. A plurality of switching elements are mounted on a first lead frame, the control board has a function corresponding to the number of the switching elements, and the number of second lead frames is a number corresponding to the function. The intelligent power switch device according to any one of claims 1 to 3, wherein the intelligent power switch device is provided. 5. The intelligent power switch device according to claim 1, wherein a heat dissipation board is attached to the control board. 6. The extending direction of the input terminal and the output terminal is equal to the extending direction of the various signal input / output terminals.
2. The device according to claim 1, wherein the direction is set to 80 degrees.
The intelligent power switch device according to any one of claims 1 to 5. 7. A housing according to claim 1, wherein a housing is formed by sealing the resin.
The intelligent power switch device according to the paragraph. 8. The switching element is a MOS FET
The intelligent power switch device according to any one of claims 1 to 7, wherein: 9. The intelligent power switch device according to claim 1, wherein the heat radiating substrate is a heat sink.