JP2002222994A - Led device - Google Patents
Led deviceInfo
- Publication number
- JP2002222994A JP2002222994A JP2001015481A JP2001015481A JP2002222994A JP 2002222994 A JP2002222994 A JP 2002222994A JP 2001015481 A JP2001015481 A JP 2001015481A JP 2001015481 A JP2001015481 A JP 2001015481A JP 2002222994 A JP2002222994 A JP 2002222994A
- Authority
- JP
- Japan
- Prior art keywords
- led
- light
- resin
- added
- additive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Led Device Packages (AREA)
Abstract
Description
【0001】[0001]
【発明が属する技術分野】本発明は透明な封止樹脂中に
拡散樹脂を使用したLED装置、とくにBN添加材を使
用したLEDランプ、チップLED等のLED装置に関
するものである。The present invention relates to an LED device using a diffusion resin in a transparent sealing resin, and more particularly to an LED device using a BN additive, such as an LED lamp and a chip LED.
【0002】[0002]
【従来の技術】従来のLED装置、例えばLEDランプ
やチップLED等において、拡散樹脂を使用してLED
(発光素子)が発光する光を拡散させる機能を備えたL
ED装置では、光の拡散材料として封止樹脂中にシリカ
粒子を添加したものが知られている。図1はLED装置
の一例としてLEDランプを説明するための図であっ
て、LED1はLEDに電力を供給する一方の端子であ
るリードフレーム2の上端部に形成された凹部(パラボ
ラ)4中にその底面電極を接続した状態で保持され、か
つ、LED1の上面電極は他方の端子であるリードフレ
ーム3に対しボンディングワイヤ5によって接続されて
いる。2. Description of the Related Art In a conventional LED device, for example, an LED lamp or a chip LED, an LED using a diffusion resin is used.
L having a function of diffusing light emitted by (light emitting element)
As the ED device, a device in which silica particles are added to a sealing resin as a light diffusion material is known. FIG. 1 is a view for explaining an LED lamp as an example of an LED device. An LED 1 has a recess (parabolic) 4 formed at an upper end of a lead frame 2 which is one terminal for supplying power to the LED. The bottom electrode is held in a connected state, and the top electrode of the LED 1 is connected to the other terminal, the lead frame 3, by a bonding wire 5.
【0003】LED1、ボンディングワイヤ5を含むL
EDランプの要部は、図示のように透明なアクリル樹脂
5等で樹脂封止されており、前記透明樹脂6中にはシリ
カ粒子7が光の拡散材料として添加されている。LED
の発光層から出た指向性の高い光は透明樹脂中のシリカ
粒子7によって散乱されてその指向性が緩和され、拡散
されるようになっている。[0003] L including LED 1 and bonding wire 5
The main part of the ED lamp is resin-sealed with a transparent acrylic resin 5 or the like as shown in the figure, and silica particles 7 are added to the transparent resin 6 as a light diffusing material. LED
The light having high directivity emitted from the light emitting layer is scattered by the silica particles 7 in the transparent resin, the directivity is reduced, and the light is diffused.
【0004】[0004]
【発明が解決しようとする課題】従来のLEDランプの
透明樹脂中に添加されたシリカ粒子は、LEDの光を拡
散するが、他方LEDの発光時に発生する熱を蓄積する
傾向があるため、樹脂から効率よく放熱することができ
ずLED発光を続けると過熱することがあり、LEDの
劣化等のトラブルの原因となることがある。The silica particles added to the transparent resin of the conventional LED lamp diffuse the light of the LED, but tend to accumulate the heat generated when the LED emits light. If the LED cannot be radiated efficiently and the LED continues to emit light, it may overheat, which may cause trouble such as deterioration of the LED.
【0005】[0005]
【課題を解決するための手段】本発明は前記従来の問題
を解決すべくなされたものであって、請求項1の発明
は、LED装置のLEDを封止する透明樹脂中に、LE
Dからの光を拡散するための拡散材料としてBN(窒化
硼素)添加剤を添加したことを特徴とするLED装置で
ある。DISCLOSURE OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and the invention of claim 1 is that the LE in the transparent resin for sealing the LED of the LED device.
An LED device to which a BN (boron nitride) additive is added as a diffusing material for diffusing light from D.
【0006】[0006]
【発明の実施の形態】本発明のLED装置の1実施形態
であるLEDランプを図1を参照して説明する。LED
1は従来装置と同様に、リードフレーム2の上端部に形
成された凹部(パラボラ)4中にその底面電極を接続し
た状態で保持され、かつ、LED1の上面電極はリード
フレーム3に対し金線からなるボンディングワイヤ5に
よって接続されている。LED1を発光させる電力はリ
ードフレーム2,3より供給される。LEDランプの要
部は図示のように例えばアクリル樹脂等の透明樹脂6で
封止され、かつ、前記封止樹脂6中にはLEDからの光
を拡散させるための拡散材料としてここではBN添加剤
8が用いられている。透明樹脂5中に添加されたBN添
加剤8は光を乱反射させると同時に熱も放射させること
ができるため、LED1の発光による発熱を前記封止樹
脂6を通じて効率よく放熱することができる。ところ
で、BN添加剤は放熱性は良好であるが、その含有率を
高くすると粘度が高くなるため、透明樹脂中へのBN添
加剤の添加に際しては、エステル系の例えばエトキシエ
トキシアセテート等の溶剤を用いるか、又は添加剤、溶
剤、樹脂の温度を上げてその粘度を下げることで樹脂中
へのBN添加剤の添加を円滑に行うことができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS An LED lamp which is an embodiment of the LED device according to the present invention will be described with reference to FIG. LED
Reference numeral 1 denotes a concave portion (parabola) 4 formed at the upper end of the lead frame 2 with its bottom electrode connected thereto, as in the conventional device, and the top electrode of the LED 1 is connected to the lead frame 3 by a gold wire. Are connected by a bonding wire 5 consisting of Power for causing the LED 1 to emit light is supplied from the lead frames 2 and 3. The main part of the LED lamp is sealed with a transparent resin 6 such as an acrylic resin as shown in the figure, and a BN additive is used in the sealing resin 6 as a diffusion material for diffusing light from the LED. 8 is used. Since the BN additive 8 added to the transparent resin 5 can diffuse light and radiate heat at the same time, heat generated by light emission of the LED 1 can be efficiently radiated through the sealing resin 6. By the way, although the BN additive has good heat dissipation properties, the viscosity increases when the content thereof is increased. Therefore, when adding the BN additive to the transparent resin, a solvent such as an ester-based solvent such as ethoxyethoxyacetate is used. The BN additive can be smoothly added to the resin by using or increasing the temperature of the additive, the solvent, and the resin to lower the viscosity.
【0007】[0007]
【発明の効果】本発明によれば、LED装置において、
透明封止樹脂中に光の拡散材料としてBN添加剤を用い
たため、LEDで発生した熱を効率よく放熱することが
でき、従来のように過熱によるLEDの劣化等のトラブ
ルを未然に防止することができる。According to the present invention, in an LED device,
Since the BN additive is used as a light diffusing material in the transparent sealing resin, the heat generated by the LED can be efficiently dissipated, and problems such as deterioration of the LED due to overheating can be prevented as before. Can be.
【図1】封止樹脂に拡散材料を添加したLED装置(L
EDランプ)を示す図である。FIG. 1 shows an LED device (L) in which a diffusion material is added to a sealing resin.
FIG.
1・・・LED、2、3・・・リードフレーム、4・・
・凹部(パラボラ)5・・・ボンディングワイヤー、6
・・・透明な封止樹脂、7,8・・・拡散材料1 ... LED, 2, 3 ... Lead frame, 4 ...
・ Recess (parabola) 5 ... bonding wire, 6
... Transparent sealing resin, 7,8 ... Diffusion material
Claims (1)
中に、LEDからの光を拡散するための拡散材料として
BN添加材を添加したことを特徴とするLED装置。1. An LED device, wherein a BN additive is added as a diffusing material for diffusing light from the LED into a transparent resin for sealing the LED of the LED device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001015481A JP2002222994A (en) | 2001-01-24 | 2001-01-24 | Led device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001015481A JP2002222994A (en) | 2001-01-24 | 2001-01-24 | Led device |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2002222994A true JP2002222994A (en) | 2002-08-09 |
Family
ID=18882023
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001015481A Pending JP2002222994A (en) | 2001-01-24 | 2001-01-24 | Led device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2002222994A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004260111A (en) * | 2003-02-27 | 2004-09-16 | Sharp Corp | Semiconductor light-emitting element and semiconductor light-emitting device using the same |
JP2005079578A (en) * | 2003-08-28 | 2005-03-24 | Agilent Technol Inc | Heat-conductivity-improved light emitting device assembly, system including the same, and method for improving heat conductivity |
JP2006344810A (en) * | 2005-06-09 | 2006-12-21 | Sumitomo Metal Electronics Devices Inc | Aluminum sintered body for housing light emitting device |
WO2008023797A1 (en) | 2006-08-25 | 2008-02-28 | The Furukawa Electric Co., Ltd. | Illumination device |
JP2008270144A (en) * | 2007-03-22 | 2008-11-06 | Furukawa Electric Co Ltd:The | Light box |
JP2009038334A (en) * | 2007-08-02 | 2009-02-19 | Lighthouse Technology Co Ltd | Light emitting diode package, direct type backlight module and edge type backlight module |
KR100886784B1 (en) | 2007-06-04 | 2009-03-04 | 박기운 | Light-emitting diode and its Lead frame |
JP2011501464A (en) * | 2007-10-24 | 2011-01-06 | テオス・インコーポレイテッド | Diffuser for LED light source |
JP2013030598A (en) * | 2011-07-28 | 2013-02-07 | Sumitomo Bakelite Co Ltd | Heat generation device |
-
2001
- 2001-01-24 JP JP2001015481A patent/JP2002222994A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004260111A (en) * | 2003-02-27 | 2004-09-16 | Sharp Corp | Semiconductor light-emitting element and semiconductor light-emitting device using the same |
JP2005079578A (en) * | 2003-08-28 | 2005-03-24 | Agilent Technol Inc | Heat-conductivity-improved light emitting device assembly, system including the same, and method for improving heat conductivity |
JP2006344810A (en) * | 2005-06-09 | 2006-12-21 | Sumitomo Metal Electronics Devices Inc | Aluminum sintered body for housing light emitting device |
WO2008023797A1 (en) | 2006-08-25 | 2008-02-28 | The Furukawa Electric Co., Ltd. | Illumination device |
US8061876B2 (en) | 2006-08-25 | 2011-11-22 | The Furukawa Electric Co., Ltd | Illumination device |
JP2008270144A (en) * | 2007-03-22 | 2008-11-06 | Furukawa Electric Co Ltd:The | Light box |
KR100886784B1 (en) | 2007-06-04 | 2009-03-04 | 박기운 | Light-emitting diode and its Lead frame |
JP2009038334A (en) * | 2007-08-02 | 2009-02-19 | Lighthouse Technology Co Ltd | Light emitting diode package, direct type backlight module and edge type backlight module |
JP2011249855A (en) * | 2007-08-02 | 2011-12-08 | Lextar Electronics Corp | Light emitting diode package |
JP2011501464A (en) * | 2007-10-24 | 2011-01-06 | テオス・インコーポレイテッド | Diffuser for LED light source |
JP2013030598A (en) * | 2011-07-28 | 2013-02-07 | Sumitomo Bakelite Co Ltd | Heat generation device |
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