JP2002016293A - Surface-mounted type light-emitting diode - Google Patents
Surface-mounted type light-emitting diodeInfo
- Publication number
- JP2002016293A JP2002016293A JP2000196971A JP2000196971A JP2002016293A JP 2002016293 A JP2002016293 A JP 2002016293A JP 2000196971 A JP2000196971 A JP 2000196971A JP 2000196971 A JP2000196971 A JP 2000196971A JP 2002016293 A JP2002016293 A JP 2002016293A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- thermosetting
- inner end
- casing
- thermosetting resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 108
- 239000003822 epoxy resin Substances 0.000 claims abstract description 60
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 60
- 229920005989 resin Polymers 0.000 claims abstract description 52
- 239000011347 resin Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 30
- 238000007789 sealing Methods 0.000 claims abstract description 22
- 238000000137 annealing Methods 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 239000012790 adhesive layer Substances 0.000 claims description 13
- 239000007769 metal material Substances 0.000 claims description 12
- 238000005476 soldering Methods 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 abstract description 29
- 238000001723 curing Methods 0.000 abstract description 17
- 230000004308 accommodation Effects 0.000 abstract description 5
- 238000001029 thermal curing Methods 0.000 abstract description 2
- 239000004593 Epoxy Substances 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 10
- 229910052709 silver Inorganic materials 0.000 description 10
- 239000004332 silver Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 7
- 238000013007 heat curing Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005192 partition Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 101100533652 Homo sapiens SLIRP gene Proteins 0.000 description 1
- 102100025491 SRA stem-loop-interacting RNA-binding protein, mitochondrial Human genes 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000005111 flow chemistry technique Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、表面実装型発光ダ
イオード及びその製造方法に関するものである。[0001] 1. Field of the Invention [0002] The present invention relates to a surface mount type light emitting diode and a method for manufacturing the same.
【0002】[0002]
【従来の技術】従来、表面実装型発光ダイオードとして
は、特開平9−293904号公報にて示すようなもの
がある。この発光ダイオード(以下、LEDという)の
製造にあたり、LEDチップは、電気絶縁樹脂からなる
ケーシングの凹状収容部内にてその底壁に位置するリー
ドの内端部に銀ペーストにより接着された後、上記ケー
シングの収容部内に封止用樹脂を充填することで封止さ
れる。2. Description of the Related Art Conventionally, as a surface mount type light emitting diode, there is one as disclosed in Japanese Patent Application Laid-Open No. 9-293904. In manufacturing this light emitting diode (hereinafter, referred to as LED), the LED chip is adhered to the inner end of the lead located on the bottom wall of the casing made of an electrically insulating resin by a silver paste, The casing is sealed by filling the casing with a sealing resin.
【0003】[0003]
【発明が解決しようとする課題】ところで、上記LED
では、上記封止用樹脂がエポキシ樹脂等の透明の熱硬化
性樹脂からなるため、当該封止用樹脂の熱硬化方法が不
適切であると、以下に述べるような不具合が生ずる。By the way, the above LED
In this case, since the sealing resin is made of a transparent thermosetting resin such as an epoxy resin, if the thermosetting method of the sealing resin is inappropriate, the following problems occur.
【0004】即ち、ケーシング内にLEDチップを熱硬
化により封止したエポキシ樹脂に対し冷熱衝撃を繰り返
し与えると、エポキシ樹脂のうちLEDチップの角部近
傍部分にマイクロクラックが発生して成長しケーシング
の収容部の開口面に達するクラックとなる。これは、エ
ポキシ樹脂の硬化を急激に行うと、当該エポキシ樹脂の
内部に、圧縮残留応力が残り、この残留応力に起因して
冷熱衝撃の繰り返しによるクラックが発生するためと考
えられる。That is, when a thermal shock is repeatedly applied to the epoxy resin in which the LED chip is sealed in the casing by thermosetting, microcracks are generated in the epoxy resin in the vicinity of the corners of the LED chip, and the epoxy resin grows and grows. The cracks reach the opening surface of the storage section. This is presumably because when the epoxy resin is rapidly cured, a residual compressive stress remains inside the epoxy resin, and the residual stress causes cracks due to repeated thermal shock.
【0005】そこで、このような現象についてさらに詳
細に検討してみた。Therefore, such a phenomenon was examined in further detail.
【0006】封止用樹脂としてエポキシ樹脂を採用し
て、このエポキシ樹脂をケーシングの収容部内に充填し
てLEDチップを封止するにあたり、図4(a)にて示
すような熱硬化方法により当該エポキシ樹脂を硬化させ
るものとする。An epoxy resin is employed as a sealing resin, and when the epoxy resin is filled in a housing portion of a casing to seal an LED chip, the epoxy resin is sealed by a thermosetting method as shown in FIG. The epoxy resin is to be cured.
【0007】この熱硬化方法によれば、エポキシ樹脂
は、熱硬化工程S1において、90℃にて2時間の間加
熱され、その後、熱硬化工程S2において、135℃に
て4時間の間加熱されて、硬化される。この場合、熱硬
化工程S2の温度条件は、135℃であって、エポキシ
樹脂の熱硬化温度(120℃乃至130℃程度)よりも
幾分高いだけで、熱硬化工程S1の温度90℃との間の
温度差は小さく、低い。According to this thermosetting method, the epoxy resin is heated at 90 ° C. for 2 hours in the thermosetting step S1, and then heated at 135 ° C. for 4 hours in the thermosetting step S2. And cured. In this case, the temperature condition of the thermosetting step S2 is 135 ° C., which is slightly higher than the thermosetting temperature (about 120 ° C. to 130 ° C.) of the epoxy resin, and is lower than the temperature of 90 ° C. of the thermosetting step S1. The temperature difference between them is small and low.
【0008】このような熱硬化方法による場合、上述の
ように熱硬化工程S2の温度が低いことから、熱硬化工
程S2による硬化後も、エポキシ樹脂内に未硬化部分が
残り、熱硬化工程S2における熱硬化処理に対応するエ
ポキシ樹脂の反応は不十分であるといえるが、エポキシ
樹脂には柔らかさが残りクラックの発生防止には有利で
ある。In the case of such a thermosetting method, since the temperature of the thermosetting step S2 is low as described above, an uncured portion remains in the epoxy resin even after the curing in the thermosetting step S2, and the thermosetting step S2 It can be said that the reaction of the epoxy resin corresponding to the heat curing treatment in the above is insufficient, but the epoxy resin remains soft and is advantageous for preventing the occurrence of cracks.
【0009】しかし、LEDをプリント配線板にフロー
或いはリフローの処理によりはんだ付けする際に、エポ
キシ樹脂は、当該はんだ付け時の高熱(240℃程度)
により膨張し易い。このため、当該エポキシ樹脂はケー
シングの収容部の開口面にて開放されているため、エポ
キシ樹脂はその熱膨張により当該収容部の開口面に向け
て延び易い。このようなエポキシ樹脂の熱膨張による延
び作用をLEDチップが受けると、当該LEDチップは
収容部の開口面に向けてエポキシ樹脂により引っ張ら
れ、LEDチップのリードの内端部との接着部分である
銀ペースト部分でオープン不良を生ずる。However, when an LED is soldered to a printed wiring board by a flow or reflow process, the epoxy resin is heated at a high temperature (about 240 ° C.) during the soldering.
Easy to expand. For this reason, since the epoxy resin is open at the opening surface of the housing portion of the casing, the epoxy resin tends to extend toward the opening surface of the housing portion due to its thermal expansion. When the LED chip receives such an extension effect due to the thermal expansion of the epoxy resin, the LED chip is pulled by the epoxy resin toward the opening surface of the housing portion and is an adhesive portion with the inner end of the lead of the LED chip. Open failure occurs in the silver paste part.
【0010】また、図4(b)にて示すような熱硬化方
法により当該エポキシ樹脂を硬化させるものとすると、
エポキシ樹脂は、熱硬化工程S1において、90℃にて
2時間の間加熱され、その後、熱硬化工程S3におい
て、195℃にて4時間の間加熱されて、硬化される。
この場合、熱硬化工程S3の温度条件は、190℃であ
って、熱硬化工程S1の温度90℃との間の温度差は大
きく、高い。If the epoxy resin is cured by a thermosetting method as shown in FIG.
The epoxy resin is heated at 90 ° C. for 2 hours in the thermosetting step S1, and then heated and cured at 195 ° C. for 4 hours in the thermosetting step S3.
In this case, the temperature condition of the thermosetting step S3 is 190 ° C., and the temperature difference between the temperature setting of the thermosetting step S1 and 90 ° C. is large and high.
【0011】このような熱硬化方法による場合、上述の
ように熱硬化工程S3の温度が高いことから、熱硬化工
程S3による硬化後、エポキシ樹脂は未硬化部分を残す
ことなく硬くなるため、上述のようなオープン不良の発
生の防止に対しては有利となるが、熱硬化工程S1の低
い温度から熱硬化工程S3の高い温度へ急激に上昇する
ため、この急激な温度変化に起因してエポキシ樹脂内に
残留応力が発生し、上記クラックの発生を招き易くな
る。In the case of such a thermosetting method, since the temperature of the thermosetting step S3 is high as described above, the epoxy resin is hardened without leaving an uncured portion after being cured in the thermosetting step S3. This is advantageous for preventing the occurrence of open failure as described above, but the temperature rises sharply from a low temperature in the thermosetting step S1 to a high temperature in the thermosetting step S3. Residual stress is generated in the resin, which tends to cause the above-described crack.
【0012】この点につき詳細に検討してみたところ、
熱硬化工程S3の温度が高いと、エポキシ樹脂の表面近
傍が内部に比べて早く硬化し始める。このため、エポキ
シ樹脂の表面は硬く内部は柔らかい状態となって、当該
エポキシ樹脂の表面と内部との間の硬化状態に差を生ず
る。そして、最終的にはエポキシ樹脂の内部まで硬化す
るものの、当該エポキシ樹脂の内部には上記圧縮残留応
力が発生する。これが上記クラックの発生の原因とな
る。When this point was examined in detail,
If the temperature of the heat curing step S3 is high, the vicinity of the surface of the epoxy resin starts to cure faster than the inside. For this reason, the surface of the epoxy resin is in a hard state and the inside is in a soft state, and there is a difference in the cured state between the surface and the inside of the epoxy resin. Then, although the epoxy resin finally hardens to the inside, the above-mentioned compressive residual stress is generated inside the epoxy resin. This causes the crack to occur.
【0013】そこで、本発明は、以上のようなことに対
処するため、透光性のある熱硬化性樹脂による少なくと
もLEDチップの封止にあたり、当該熱硬化性樹脂の熱
硬化過程に工夫を凝らし、当該熱硬化性樹脂のクラック
やLEDチップのリードフレームとの間のオープン不良
の発生を未然に防止するようにした表面実装型発光ダイ
オード及びその製造方法を提供することを目的とする。Therefore, in order to cope with the above, the present invention devises a thermosetting process of the thermosetting resin in sealing at least the LED chip with a translucent thermosetting resin. It is another object of the present invention to provide a surface-mounted light emitting diode that prevents cracks in the thermosetting resin and open defects between the LED chip and a lead frame, and a method of manufacturing the same.
【0014】[0014]
【課題を解決するための手段】上記課題の解決にあた
り、請求項1に記載の発明に係る表面実装型発光ダイオ
ードは、上壁(11)にて外方へ開口するように収容部
(12)を凹状に形成してなる電気絶縁樹脂製ケーシン
グ(10)と、このケーシングにその周壁の一側部(1
3)から挿入されて収容部内にその底面(12b)に沿
い内端部(21)を延出してなる金属材料からなる一側
リードフレーム(20)と、ケーシングにその周壁の他
側部(15)から挿入されて収容部内にその底面に沿い
一側リードフレームの内端部に対向するように延出する
内端部(31)を有してなる金属材料からなる他側リー
ドフレーム(30)と、収容部内に収容されて両リード
フレームの一方(30)の内端部上に導電性接着層(5
0)を介し装着したLEDチップ(40)と、収容部内
に充填されてLEDチップ、両リードフレームの各内端
部及び導電性接着層を封止する透光性のある熱硬化性樹
脂からなる封止部材(60)とを備える。In order to solve the above-mentioned problems, a surface-mounted light-emitting diode according to the first aspect of the present invention has a housing portion (12) which is opened outward at an upper wall (11). Is formed in a concave shape, and a casing (10) made of an electrically insulating resin, and one side portion (1
3) a lead frame (20) made of a metal material extending from the inner end (21) along the bottom surface (12b) into the housing portion, and the other side portion (15) of the peripheral wall of the casing. ) Is formed from a metal material and has an inner end (31) extending into the housing portion along the bottom surface thereof so as to face the inner end of the one-side lead frame (30). And a conductive adhesive layer (5) on the inner end of one (30) of both lead frames housed in the housing section.
0) and a translucent thermosetting resin that fills the housing and seals the LED chip, the inner ends of both lead frames, and the conductive adhesive layer. A sealing member (60).
【0015】当該表面実装型発光ダイオードにおいて、
封止部材は、熱硬化性樹脂をその熱硬化温度よりも少し
低い温度で仮硬化時間の間加熱し、その後、当該熱硬化
性樹脂をその熱硬化温度よりも少し高い温度にて本硬化
し、ついで、当該熱硬化性樹脂を両リードフレームのは
んだ付け温度よりも少し低い温度でアニール時間の間ア
ニール処理してなることを特徴とする。In the surface mount type light emitting diode,
The sealing member heats the thermosetting resin at a temperature slightly lower than the thermosetting temperature for a tentative curing time, and thereafter, the thermosetting resin is fully cured at a temperature slightly higher than the thermosetting temperature. Then, the thermosetting resin is annealed at a temperature slightly lower than the soldering temperature of both lead frames for an annealing time.
【0016】これにより、熱硬化性樹脂の加熱温度は、
仮硬化時の加熱温度からアニール時の加熱温度に急激に
上昇することなく、仮硬化時の加熱温度から本硬化時の
加熱温度という中間の加熱温度を経てアニール時の加熱
温度に上昇する。Accordingly, the heating temperature of the thermosetting resin is:
The heating temperature during temporary hardening does not suddenly increase from the heating temperature during temporary curing to the heating temperature during annealing, but rather increases from the heating temperature during temporary curing to the heating temperature during annealing through the intermediate heating temperature of the heating temperature during main curing.
【0017】このように、熱硬化性樹脂の加熱温度が仮
硬化時の温度からアニール時の温度まで上昇すること
で、当該熱硬化性樹脂の未硬化部分の発生やLEDチッ
プとリードフレームの内端部との間のオープン不良の発
生は未然に防止できる。また、熱硬化性樹脂の加熱温度
を、上述のように、中間の温度を介在させて3段階にて
上昇させるようにしたので、熱硬化性樹脂が緩やかに熱
硬化することとなる。従って、当該熱硬化性樹脂の内部
に上述した圧縮残留応力が発生することがなく、その結
果、熱硬化性樹脂内にクラックが発生することがない。As described above, when the heating temperature of the thermosetting resin rises from the temperature at the time of temporary curing to the temperature at the time of annealing, the uncured portion of the thermosetting resin is generated, and the LED chip and the lead frame are hardened. The occurrence of an open defect with the end can be prevented beforehand. In addition, as described above, the heating temperature of the thermosetting resin is increased in three stages with an intermediate temperature therebetween, so that the thermosetting resin is slowly thermoset. Therefore, the above-mentioned compressive residual stress does not occur inside the thermosetting resin, and as a result, cracks do not occur in the thermosetting resin.
【0018】また、請求項2に記載の発明では、請求項
1に記載の発明において、熱硬化性樹脂は透光性エポキ
シ樹脂であり、熱硬化温度よりも少し低い温度は90℃
であり、熱硬化温度よりも少し高い温度は135℃であ
り、はんだ付け温度よりも少し低い温度は190℃であ
り、仮硬化時間は2時間であり、本硬化時間及びアニー
ル時間は、共に、4時間であることを特徴とする。According to the second aspect of the present invention, in the first aspect, the thermosetting resin is a translucent epoxy resin, and the temperature slightly lower than the thermosetting temperature is 90 ° C.
The temperature slightly higher than the thermosetting temperature is 135 ° C., the temperature slightly lower than the soldering temperature is 190 ° C., the temporary curing time is 2 hours, and the main curing time and the annealing time are both: It is 4 hours.
【0019】これにより、請求項1に記載の発明の作用
効果をより一層確実に達成できる。Thus, the function and effect of the invention described in claim 1 can be more reliably achieved.
【0020】また、請求項3に記載の発明では、上壁
(11)にて外方へ開口するように収容部(12)を凹
状に形成してなる電気絶縁樹脂製ケーシング(10)
と、このケーシングにその周壁の一側部(13)から挿
入されて収容部内にその底面(12b)に沿い内端部
(21)を延出してなる金属材料からなる一側リードフ
レーム(20)と、ケーシングにその周壁の他側部(1
5)から挿入されて収容部内にその底面に沿い一側リー
ドフレームの内端部に対向するように延出する内端部
(31)を有してなる金属材料からなる他側リードフレ
ーム(30)と、収容部内に収容されて両リードフレー
ムの一方(30)の内端部上に導電性接着層(50)を
介し装着したLEDチップ(40)とを有するLED本
体の収容部内に、LEDチップ、両リードフレームの各
内端部及び導電性接着層を封止するように、透光性のあ
る熱硬化性樹脂を充填して熱硬化させて封止部材(6
0)とすることで表面実装型発光ダイオードを製造する
方法において、封止部材を、熱硬化性樹脂をその熱硬化
温度よりも少し低い温度で仮硬化時間の間加熱し、その
後、当該熱硬化性樹脂をその熱硬化温度よりも少し高い
温度にて本硬化し、ついで、当該熱硬化性樹脂を両リー
ドフレームのはんだ付け温度よりも少し低い温度でアニ
ール時間の間アニール処理してなることを特徴とする。According to the third aspect of the present invention, the casing (10) made of an electrically insulating resin is formed such that the accommodation portion (12) is formed in a concave shape so as to open outward on the upper wall (11).
And a one-sided lead frame (20) made of a metal material which is inserted into the casing from one side (13) of its peripheral wall and extends into the housing along the bottom surface (12b) at the inner end (21). And the other side of the peripheral wall (1
5) The other lead frame (30) made of a metal material having an inner end (31) inserted into the housing portion and extending along the bottom surface thereof so as to face the inner end of the one lead frame. ) And an LED chip (40) housed in the housing part and mounted on the inner end of one of the two lead frames (30) via a conductive adhesive layer (50). A sealing member (6) is filled with a translucent thermosetting resin and thermally cured so as to seal the chip, the inner ends of both lead frames and the conductive adhesive layer.
0), the sealing member is heated at a temperature slightly lower than the thermosetting temperature of the thermosetting resin for a temporary curing time, and then the thermosetting resin is heated. That the thermosetting resin is fully cured at a temperature slightly higher than its thermosetting temperature, and then the thermosetting resin is annealed at a temperature slightly lower than the soldering temperature of both lead frames for an annealing time. Features.
【0021】これにより、請求項1に記載の発明の作用
効果を達成できる表面実装型発光ダイオードの製造が可
能となる。This makes it possible to manufacture a surface-mounted light emitting diode that can achieve the functions and effects of the first aspect of the present invention.
【0022】また、請求項4に記載の発明では、請求項
3に記載の発明において、熱硬化性樹脂は透光性エポキ
シ樹脂であり、熱硬化温度よりも少し低い温度は90℃
であり、熱硬化温度よりも少し高い温度は135℃であ
り、はんだ付け温度よりも少し低い温度は190℃であ
り、仮硬化時間は2時間であり、本硬化時間及びアニー
ル時間は、共に、4時間であることを特徴とする。According to a fourth aspect of the present invention, in the third aspect, the thermosetting resin is a translucent epoxy resin, and the temperature slightly lower than the thermosetting temperature is 90 ° C.
The temperature slightly higher than the thermosetting temperature is 135 ° C., the temperature slightly lower than the soldering temperature is 190 ° C., the temporary curing time is 2 hours, and the main curing time and the annealing time are both: It is 4 hours.
【0023】また、請求項5に記載の発明によれば、請
求項3に記載のLED本体の収容部内に、LEDチッ
プ、両リードフレームの各内端部及び導電性接着層を封
止するように、透光性のある熱硬化性樹脂を充填して熱
硬化させて封止部材(60)とすることで表面実装型発
光ダイオードを製造する方法において、封止部材を、熱
硬化性樹脂をその熱硬化温度よりも少し低い温度から両
リードフレームのはんだ付け温度よりも少し低い温度に
かけて所定時間の間加熱することを特徴とする。According to the fifth aspect of the present invention, the LED chip, the inner ends of both the lead frames, and the conductive adhesive layer are sealed in the accommodation portion of the LED body according to the third aspect. In a method of manufacturing a surface-mounted light-emitting diode by filling a translucent thermosetting resin and thermosetting to form a sealing member (60), the sealing member is made of a thermosetting resin. The heating is performed for a predetermined time from a temperature slightly lower than the thermosetting temperature to a temperature slightly lower than the soldering temperature of both lead frames.
【0024】これにより、請求項3に記載の発明と実質
的に同様の作用効果を達成できる。According to this, substantially the same operation and effect as those of the third aspect can be achieved.
【0025】なお、上記各手段の括弧内の符号は、後述
する実施形態に記載の具体的手段との対応関係を示すも
のである。The reference numerals in parentheses of the above means indicate the correspondence with specific means described in the embodiments described later.
【0026】[0026]
【発明の実施の形態】以下、本発明の一実施形態を図面
により説明する。図1及び図2は本発明に係る表面実装
型LEDの一実施形態を示している。このLEDは、電
気絶縁樹脂(例えば、白色系のガラス入りエポキシ樹脂
や白色系のガラス入りポリフタルアシド等のガラス転移
温度110℃を有する高耐熱性ポリマー)からなる直方
体形状のケーシング10を備えており、このケーシング
10の上壁11には、収容部12が凹状に形成されてい
る。この収容部12は、その開口部12aにてケーシン
グ10の上壁11から外方に開口しており、この収容部
12の底面12bは、上壁11に並行となっている。ま
た、収容部12の内周面12cは、光反射効率を高める
ため、開口部12aから底面12bにかけて末すぼまり
状に傾斜している。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings. 1 and 2 show an embodiment of a surface-mounted LED according to the present invention. This LED includes a rectangular parallelepiped casing 10 made of an electrically insulating resin (for example, a high heat-resistant polymer having a glass transition temperature of 110 ° C. such as a white epoxy resin containing glass or a polyphthalic acid containing white glass). In addition, a housing portion 12 is formed in a concave shape on an upper wall 11 of the casing 10. The housing portion 12 opens outward from the upper wall 11 of the casing 10 at the opening 12a, and the bottom surface 12b of the housing portion 12 is parallel to the upper wall 11. Further, the inner peripheral surface 12c of the housing portion 12 is slightly tapered from the opening 12a to the bottom surface 12b in order to increase the light reflection efficiency.
【0027】また、当該LEDは、金属材料からなる両
板状リードフレーム20、30を備えており、これら両
リードフレーム20、30は、図1にて示すような構成
となるように、ケーシング10にインサート成形されて
いる。なお、上記金属材料に代えて、導電性弾性材料
(例えば、導電性バネ材料)により両リードフレーム2
0、30を形成してもよい。The LED includes two plate-shaped lead frames 20 and 30 made of a metal material. The two lead frames 20 and 30 are arranged in a casing 10 so as to have a structure as shown in FIG. Insert molded. Note that, instead of the above metal material, both lead frames 2 are made of a conductive elastic material (for example, a conductive spring material).
0 and 30 may be formed.
【0028】ここで、リードフレーム20は、LEDの
アノードを構成するもので、このリードフレーム20
は、ケーシング10内にその一側側壁13から収容部1
2の底面12bに沿うように挿入されている。このリー
ドフレーム20の内端部21は、収容部12内にその底
面12bに沿って延出している。Here, the lead frame 20 constitutes the anode of the LED.
The housing portion 1 is inserted into the casing 10 from one side wall 13 thereof.
2 are inserted along the bottom surface 12b. The inner end 21 of the lead frame 20 extends into the housing portion 12 along the bottom surface 12b.
【0029】一方、リードフレーム30は、LEDのカ
ソードを構成するもので、このリードフレーム30は、
ケーシング10内にその他側側壁15から収容部12の
底面12bに沿うように挿入されている。このリードフ
レーム30の内端部31は、収容部12内にその底面1
2bに沿って延出しリードフレーム20の内端部21に
ケーシング10の隔壁14を介し対向している。また、
隔壁14は、ケーシング10の収容部12の底面12b
から両内端部21、31の間に突出形成されており、こ
の隔壁14は、両リードフレーム20、30の各内端部
21、31を相互に電気絶縁する役割を果たす。On the other hand, the lead frame 30 constitutes the cathode of the LED.
It is inserted into the casing 10 from the other side wall 15 along the bottom surface 12 b of the housing 12. The inner end 31 of the lead frame 30 has its bottom surface 1
It extends along 2b and faces the inner end 21 of the lead frame 20 via the partition 14 of the casing 10. Also,
The partition wall 14 is formed on the bottom surface 12 b of the housing 12 of the casing 10.
The partition wall 14 is formed so as to protrude between the inner end portions 21 and 31, and the partition wall 14 serves to electrically insulate the inner end portions 21 and 31 of the lead frames 20 and 30 from each other.
【0030】また、リードフレーム20は、そのケーシ
ング10の一側側壁13から外方へ延出する部分(以
下、脚部22という)にて、当該一側側壁13からケー
シング10の低壁16の図1にて図示左端部にかけて屈
曲形成されており、このリードフレーム20は、その外
端部22a(脚部22の先端部)にて、プリント基板等
の配線板Pの配線部にはんだ付け22bされている。The lead frame 20 extends from one side wall 13 of the casing 10 to the outside (hereinafter referred to as a leg portion 22) of the lower wall 16 of the casing 10 from the one side wall 13. In FIG. 1, the lead frame 20 is bent toward the left end in the drawing, and the lead frame 20 is soldered 22b to the wiring portion of the wiring board P such as a printed board at the outer end 22a (the tip of the leg 22). Have been.
【0031】一方、リードフレーム30は、そのケーシ
ング10の他側側壁15から外方へ延出する部分(以
下、脚部32という)にて、当該他側側壁15からケー
シング10の低壁16の図1にて図示右端部にかけて屈
曲形成されており、このリードフレーム30は、その外
端部32a(脚部32の先端部)にて、配線板Pの他の
配線部にはんだ付け32bされている。これにより、当
該LEDは配線板Pに表面実装されている。なお、この
両はんだ付け22b、32bによる表面実装は、フロー
或いはリフローの処理によりなされている。On the other hand, the lead frame 30 extends from the other side wall 15 of the casing 10 to the lower wall 16 of the casing 10 at a portion extending outward from the other side wall 15 of the casing 10 (hereinafter referred to as a leg 32). The lead frame 30 is bent to the right end in FIG. 1 and soldered 32b to another wiring portion of the wiring board P at an outer end portion 32a (a distal end portion of the leg portion 32). I have. Thus, the LED is surface-mounted on the wiring board P. The surface mounting by the two solders 22b and 32b is performed by a flow or reflow process.
【0032】また、当該LEDは、LEDチップ40を
備えており、このLEDチップ40は、収容部12内に
収容されて、銀ペースト層50によりリードフレーム3
0の内端部31の表面に接着されている。当該LEDチ
ップ40は、PN接合を形成する化合物半導体のチップ
を有しており、このLEDチップ40は、そのPN接合
に順方向に電流を流すことで、収容部12の開口面側に
向け発光する。なお、銀ペースト層50は、LEDチッ
プ40の負極をリードフレーム30の内端部31に電気
的に接続する役割を果たす。また、LEDチップ40
は、その正極にて、金線41によりリードフレーム20
の内端部21に電気的に接続されている。The LED is provided with an LED chip 40, which is housed in the housing section 12 and provided with a silver paste layer 50 by means of a silver paste layer 50.
0 is adhered to the surface of the inner end 31. The LED chip 40 has a compound semiconductor chip forming a PN junction, and the LED chip 40 emits light toward the opening surface side of the housing portion 12 by flowing a current in the forward direction through the PN junction. I do. The silver paste layer 50 plays a role of electrically connecting the negative electrode of the LED chip 40 to the inner end 31 of the lead frame 30. Also, the LED chip 40
Is connected to the lead frame 20 by the gold wire 41 at its positive electrode.
Are electrically connected to the inner end portion 21 of the main body.
【0033】また、収容部12内には、封止部材60
が、封止用ポッティング樹脂(例えば、透明のエポキシ
樹脂)の充填による熱硬化でもって形成されており、こ
の封止部材60は、LEDチップ40、金線41及び両
リードフレーム20、30の各内端部21、31を被覆
するように収容部12内に封止している。The housing member 12 has a sealing member 60 therein.
Is formed by thermosetting by filling with a sealing potting resin (for example, a transparent epoxy resin), and the sealing member 60 is formed of the LED chip 40, the gold wire 41, and each of the lead frames 20 and 30. It seals in the accommodation part 12 so that the inner ends 21 and 31 may be covered.
【0034】以上のように構成した本実施形態におい
て、当該LEDの製造方法について説明する。まず、図
1にて示すLEDのうち封止部材60以外の構成からな
る部分(以下、LED本体という)を製造する。然る
後、ケーシング10の収容部12内に透明のエポキシ樹
脂を充填する。この充填は、LEDチップ40、金線4
1及び両リードフレーム20、30の各内端部21、3
1を被覆するように行う。In the embodiment configured as described above, a method of manufacturing the LED will be described. First, a portion of the LED shown in FIG. 1 having a configuration other than the sealing member 60 (hereinafter, referred to as an LED main body) is manufactured. Thereafter, the housing 12 of the casing 10 is filled with a transparent epoxy resin. This filling is performed by the LED chip 40, the gold wire 4
1 and the inner ends 21, 3 of both lead frames 20, 30
1 to cover.
【0035】このような充填後、ケーシング10内のエ
ポキシ樹脂の熱硬化処理を図2にて示す熱硬化工程のも
と以下のようにして行う。まず、上述のようにエポキシ
樹脂が収容部12内に充填されてなる上記LED本体
を、図2の熱硬化工程S1において、90℃にて2時間
(仮硬化時間)の間加熱する。これにより、エポキシ樹
脂は仮硬化される。After such filling, the thermosetting treatment of the epoxy resin in the casing 10 is performed as follows in the thermosetting step shown in FIG. First, the LED main body in which the epoxy resin is filled in the housing section 12 as described above is heated at 90 ° C. for 2 hours (temporary curing time) in the thermosetting step S1 of FIG. Thereby, the epoxy resin is temporarily cured.
【0036】その後、熱硬化工程S2において、上記構
成のLED本体を、135℃にて4時間(本硬化時間)
の間加熱し、ついで、図2の熱硬化工程S3において、
190℃にて4時間(アニール時間)の間加熱する。こ
れにより、エポキシ樹脂は本硬化された後アニール処理
される。Thereafter, in the heat curing step S2, the LED main body having the above-mentioned structure is heated at 135 ° C. for 4 hours (main curing time).
During the heat curing step S3 in FIG.
Heat at 190 ° C. for 4 hours (annealing time). Thereby, the epoxy resin is annealed after being fully cured.
【0037】以上のように、本実施形態では、エポキシ
樹脂の熱硬化処理が、図4(a)の2段階の熱硬化工程
や図4(b)の2段階の熱硬化工程とは異なり、図2に
て示すごとく、図4(a)(b)の両工程の長所を取り
込んだ3段階の熱硬化工程を経てなされる。従って、エ
ポキシ樹脂の加熱温度は、90℃から190℃に急激に
上昇することなく、90℃から135℃という中間の加
熱温度を経て190℃に上昇する。これにより、熱硬化
工程S3では、エポキシ樹脂にアニーリング処理を施す
こととなる。As described above, in the present embodiment, the thermosetting treatment of the epoxy resin is different from the two-stage thermosetting process of FIG. 4A and the two-stage thermosetting process of FIG. As shown in FIG. 2, the process is performed through a three-stage thermosetting process incorporating the advantages of both processes of FIGS. 4 (a) and 4 (b). Therefore, the heating temperature of the epoxy resin does not rapidly rise from 90 ° C to 190 ° C, but rises to 190 ° C via an intermediate heating temperature of 90 ° C to 135 ° C. Thus, in the thermosetting step S3, an annealing process is performed on the epoxy resin.
【0038】よって、エポキシ樹脂の加熱温度が90℃
から190℃まで上昇することで、図4(a)の2段階
の加熱工程でエポキシ樹脂を加熱処理した場合に生ずる
当該エポキシ樹脂の未硬化部分の発生やLEDチップ4
0とリードフレーム30の内端部との間の銀ペースト5
0のオープン不良の発生は未然に防止できる。また、上
述のように、エポキシ樹脂の加熱温度を図4(b)の2
段階の熱硬化工程にように90℃から190℃に急激に
上昇させることなく、エポキシ樹脂の加熱温度を、加熱
温度90℃から中間の加熱温度135℃を経て190℃
まで上昇させる。従って、エポキシ樹脂が緩やかに熱硬
化することとなるため、当該エポキシ樹脂の内部に上述
した圧縮残留応力が発生することがなく、その結果、エ
ポキシ樹脂内にクラックが発生することがない。Therefore, the heating temperature of the epoxy resin is 90 ° C.
4A, the uncured portion of the epoxy resin is generated when the epoxy resin is heat-treated in the two-step heating process of FIG.
Silver paste 5 between the lead frame 30 and the inner end of the lead frame 30
The occurrence of an open defect of 0 can be prevented beforehand. Further, as described above, the heating temperature of the epoxy resin is set at 2 in FIG.
The heating temperature of the epoxy resin is increased from 90 ° C. to 190 ° C. through an intermediate heating temperature of 135 ° C. without rapidly increasing the temperature from 90 ° C. to 190 ° C. as in the thermal curing step.
Up to Therefore, the epoxy resin is gently thermally cured, so that the above-mentioned compressive residual stress does not occur inside the epoxy resin, and as a result, cracks do not occur in the epoxy resin.
【0039】これにより、本実施形態によれば、エポキ
シ樹脂の未硬化部分の発生、銀ペースト50のオープン
不良の発生及びエポキシ樹脂のクラックの発生を共に確
実に防止できる表面実装型LEDの製造が可能となる。Thus, according to the present embodiment, it is possible to manufacture a surface-mounted LED which can reliably prevent the occurrence of uncured portions of the epoxy resin, the occurrence of open defects in the silver paste 50, and the occurrence of cracks in the epoxy resin. It becomes possible.
【0040】また、このようにして製造したLEDを、
フロー或いはリフローの処理にて、配線板Pに図1にて
示すごとくはんだ付けする。この場合フロー或いはリフ
ローの処理によるはんだ付け時の加熱温度は、熱硬化工
程S3での加熱温度190℃に近い温度であって、エポ
キシ樹脂が黄変しない温度であるから、フロー或いはリ
フローの処理によって、エポキシ樹脂が黄変することが
ない。The LED manufactured in this manner is
In the flow or reflow process, the circuit board P is soldered as shown in FIG. In this case, the heating temperature at the time of soldering by the flow or reflow treatment is a temperature close to the heating temperature of 190 ° C. in the thermosetting step S3 and the temperature at which the epoxy resin does not turn yellow. The epoxy resin does not yellow.
【0041】ちなみに、上記構成の多数のLEDを本実
施形態にて述べた図2の熱硬化工程を経て製造した場合
と、当該各LEDを図4(a)及び図4(b)の熱硬化
工程をそれぞれ経て製造した場合の上記オープン不良や
クラック不良を調べてみたところ、図3にて示すような
結果が得られた。これによれば、図4(a)の従来の熱
硬化工程による各LEDでは、上記クラック不良の発生
はないが、上記オープン不良の発生があった。また、図
4(b)の従来の熱硬化工程による各LEDでは、上記
オープン不良の発生はないが、上記クラック不良の発生
があった。これらに対し、本実施形態によるLEDで
は、上記オープン不良及び上記クラック不良の双方の発
生がなかった。なお、上記クラックの発生を調べるため
の冷熱衝撃繰り返しは、40℃と100℃との間で15
00回行った。By the way, the case where a large number of LEDs having the above configuration are manufactured through the thermosetting process of FIG. 2 described in the present embodiment, and the case where each LED is formed by the thermosetting process of FIGS. 4 (a) and 4 (b) When the above open defect and crack defect in the case of manufacturing through each process were examined, the result as shown in FIG. 3 was obtained. According to this, in each LED in the conventional thermosetting process of FIG. 4A, the crack failure did not occur, but the open failure occurred. Further, in each LED in the conventional thermosetting process of FIG. 4B, the above-mentioned open failure did not occur, but the above-mentioned crack failure occurred. On the other hand, in the LED according to the present embodiment, neither the open failure nor the crack failure occurred. The thermal shock repetition for examining the crack generation was carried out between 40 ° C. and 100 ° C. for 15 minutes.
It was performed 00 times.
【0042】なお、本発明の実施にあたり、銀ペースト
層50に代えて、導電性接着層、例えば、接着樹脂に導
電性粒子を混合してなる接着層を採用しても、上記オー
プン不良に対しては、銀ペースト層50の場合と同様で
ある。In the practice of the present invention, even if a conductive adhesive layer, for example, an adhesive layer obtained by mixing conductive particles with an adhesive resin is employed in place of the silver paste layer 50, the above-mentioned open defect can be prevented. This is the same as the case of the silver paste layer 50.
【0043】また、本発明の実施にあたり、上記実施形
態にて述べた熱硬化工程S1での加熱温度は、90℃±
10℃の範囲の温度であればよく、熱硬化工程S2での
加熱温度は、エポキシ樹脂の硬化温度の±10℃の範囲
の温度であればよい。また、熱硬化工程S3での加熱温
度は、リフロー或いはフローの処理による配線板Pへの
LEDの実装温度よりも少し低い温度であればよい。ま
た、熱硬化工程S1での加熱時間はエポキシ樹脂の仮硬
化時間として1時間以上であればよく、熱硬化工程S2
での加熱時間はエポキシ樹脂の本硬化時間として3時間
以上であればよく、また、熱硬化工程S3での熱硬化時
間は、エポキシ樹脂のアニール時間として3時間以上で
あればよい。In practicing the present invention, the heating temperature in the thermosetting step S1 described in the above embodiment is 90 ° C. ±
The heating temperature in the thermosetting step S2 may be a temperature within a range of ± 10 ° C. of the curing temperature of the epoxy resin. The heating temperature in the thermosetting step S3 may be a temperature slightly lower than the temperature at which the LED is mounted on the wiring board P by the reflow or flow processing. The heating time in the thermosetting step S1 may be one hour or more as the temporary curing time of the epoxy resin.
The heating time in step S3 may be at least 3 hours as the main curing time of the epoxy resin, and the heat curing time in the heat curing step S3 may be at least 3 hours as the annealing time of the epoxy resin.
【0044】また、本発明の実施にあたり、上記実施形
態にて述べた各熱硬化工程での温度、90℃、135℃
及び190℃を通れば、当該加熱温度は段階的にではな
く連続的に90℃から190℃にかけて変化するように
しても、上記実施形態と実質的に同様の作用効果を達成
できる。この場合、各温度の加熱時間のため、温度上昇
の時間的勾配は、90℃と135℃との間の方が135
℃と190℃との間よりも小さい。なお、190℃に達
した後は4時間その温度を維持する。In practicing the present invention, the temperature in each of the thermosetting steps described in the above embodiment, 90 ° C., 135 ° C.
And 190 ° C., even if the heating temperature changes continuously from 90 ° C. to 190 ° C. instead of stepwise, it is possible to achieve substantially the same operation and effect as in the above embodiment. In this case, due to the heating time at each temperature, the temporal gradient of the temperature rise is 135 ° C. between 90 ° C. and 135 ° C.
Less than between ° C and 190 ° C. After reaching 190 ° C., the temperature is maintained for 4 hours.
【0045】また、本発明の実施にあたり、ケーシング
10の収容部12の内周壁は、上記各実施形態にて述べ
た場合と異なり、底面12bから開口部12aにかけ
て、同一の断面形状を有していてもよい。In implementing the present invention, the inner peripheral wall of the housing 12 of the casing 10 has the same cross-sectional shape from the bottom surface 12b to the opening 12a, unlike the case described in each of the above embodiments. You may.
【図1】本発明の一実施形態を示す断面図である。FIG. 1 is a sectional view showing an embodiment of the present invention.
【図2】図1のLEDのエポキシ樹脂の熱硬化工程を示
す図である。FIG. 2 is a view illustrating a thermosetting process of an epoxy resin of the LED of FIG. 1;
【図3】上記実施形態における熱硬化工程を経て製造し
たLEDと図4(a)(b)の各従来熱硬化工程を経て
製造したLEDとの不良発生有無の比較図表である。FIG. 3 is a table comparing the LED manufactured through the thermosetting process and the LED manufactured through each of the conventional thermosetting processes of FIGS.
【図4】(a)、(b)は、それぞれ、従来の熱硬化工
程を示す図である。FIGS. 4A and 4B are diagrams showing a conventional thermosetting process.
10…ケーシング、11…上壁、12…収容部、13…
一側側壁部、15…他側側壁部、20、30…リードフ
レーム、21、31…内端部、40…LEDチップ、5
0…銀ペースト層、60…封止部材。10 ... casing, 11 ... upper wall, 12 ... accommodation part, 13 ...
One side wall, 15 ... Other side wall, 20, 30 ... Lead frame, 21, 31 ... Inner end, 40 ... LED chip, 5
0: silver paste layer, 60: sealing member.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 柴田 博万 愛知県刈谷市昭和町1丁目1番地 株式会 社デンソー内 Fターム(参考) 4M109 AA01 BA01 CA02 EA02 EC11 GA01 5F041 AA41 CA73 DA02 DA12 DA17 DA44 DA74 DA78 DB09 DC23 DC66 5F061 AA01 BA01 CA21 CB13 FA01 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Hiromasa Shibata 1-1-1 Showa-cho, Kariya-shi, Aichi F-term in DENSO Corporation (reference) 4M109 AA01 BA01 CA02 EA02 EC11 GA01 5F041 AA41 CA73 DA02 DA12 DA17 DA44 DA74 DA78 DB09 DC23 DC66 5F061 AA01 BA01 CA21 CB13 FA01
Claims (5)
収容部(12)を凹状に形成してなる電気絶縁樹脂製ケ
ーシング(10)と、 このケーシングにその周壁の一側部(13)から挿入さ
れて前記収容部内にその底面(12b)に沿い内端部
(21)を延出してなる金属材料からなる一側リードフ
レーム(20)と、 前記ケーシングにその周壁の他側部(15)から挿入さ
れて前記収容部内にその底面に沿い前記一側リードフレ
ームの内端部に対向するように延出する内端部(31)
を有してなる金属材料からなる他側リードフレーム(3
0)と、 前記収容部内に収容されて前記両リードフレームの一方
(30)の内端部上に導電性接着層(50)を介し装着
したLEDチップ(40)と、 前記収容部内に充填されて前記LEDチップ、両リード
フレームの各内端部及び導電性接着層を封止する透光性
のある熱硬化性樹脂からなる封止部材(60)とを備え
る表面実装型発光ダイオードにおいて、 前記封止部材は、前記熱硬化性樹脂をその熱硬化温度よ
りも少し低い温度で仮硬化時間の間加熱し、その後、当
該熱硬化性樹脂をその熱硬化温度よりも少し高い温度に
て本硬化し、ついで、当該熱硬化性樹脂を前記両リード
フレームのはんだ付け温度よりも少し低い温度でアニー
ル時間の間アニール処理してなることを特徴とする表面
実装型発光ダイオード。1. A casing (10) made of an electrically insulating resin having a recess (12) formed so as to open outward on an upper wall (11), and one side of a peripheral wall of the casing. A lead frame (20) made of a metal material which is inserted from (13) and extends into the housing portion along the bottom surface (12b) of the inner end portion (21); An inner end (31) inserted from the portion (15) and extending into the housing along the bottom surface thereof so as to face the inner end of the one-side lead frame;
Lead frame (3) made of a metal material having
0), an LED chip (40) housed in the housing part and mounted on the inner end of one (30) of the two lead frames via a conductive adhesive layer (50), and filled in the housing part. And a sealing member (60) made of a translucent thermosetting resin for sealing the LED chip, the inner ends of both lead frames and a conductive adhesive layer. The sealing member heats the thermosetting resin at a temperature slightly lower than the thermosetting temperature for a tentative curing time, and then fully cures the thermosetting resin at a temperature slightly higher than the thermosetting temperature. Then, the thermosetting resin is annealed at a temperature slightly lower than the soldering temperature of the two lead frames for an annealing time, and is a surface-mounted light emitting diode.
であり、前記熱硬化温度よりも少し低い温度は90℃で
あり、前記熱硬化温度よりも少し高い温度は135℃で
あり、前記はんだ付け温度よりも少し低い温度は190
℃であり、前記仮硬化時間は2時間であり、前記本硬化
時間及びアニール時間は、共に、4時間であることを特
徴とする請求項1に記載の表面実装型発光ダイオード。2. The thermosetting resin is a translucent epoxy resin, a temperature slightly lower than the thermosetting temperature is 90 ° C., a temperature slightly higher than the thermosetting temperature is 135 ° C., The temperature slightly lower than the soldering temperature is 190
2. The surface-mounted light emitting diode according to claim 1, wherein the temporary curing time is 2 hours, and the main curing time and the annealing time are both 4 hours.
収容部(12)を凹状に形成してなる電気絶縁樹脂製ケ
ーシング(10)と、このケーシングにその周壁の一側
部(13)から挿入されて前記収容部内にその底面(1
2b)に沿い内端部(21)を延出してなる金属材料か
らなる一側リードフレーム(20)と、前記ケーシング
にその周壁の他側部(15)から挿入されて前記収容部
内にその底面に沿い前記一側リードフレームの内端部に
対向するように延出する内端部(31)を有してなる金
属材料からなる他側リードフレーム(30)と、前記収
容部内に収容されて前記両リードフレームの一方(3
0)の内端部上に導電性接着層(50)を介し装着した
LEDチップ(40)とを有するLED本体の前記収容
部内に、前記LEDチップ、両リードフレームの各内端
部及び導電性接着層を封止するように、透光性のある熱
硬化性樹脂を充填して熱硬化させて封止部材(60)と
することで表面実装型発光ダイオードを製造する方法に
おいて、 前記封止部材を、前記熱硬化性樹脂をその熱硬化温度よ
りも少し低い温度で仮硬化時間の間加熱し、その後、当
該熱硬化性樹脂をその熱硬化温度よりも少し高い温度に
て本硬化し、ついで、当該熱硬化性樹脂を前記両リード
フレームのはんだ付け温度よりも少し低い温度でアニー
ル時間の間アニール処理してなることを特徴とする表面
実装型発光ダイオードの製造方法。3. An electrically insulating resin casing (10) having a recess (12) formed so as to open outward on the upper wall (11), and one side of a peripheral wall of the casing. (13) and is inserted into the housing portion at its bottom surface (1).
A one-side lead frame (20) made of a metal material extending along an inner end portion (21) along 2b), and a bottom surface inserted into the casing from the other side portion (15) of the peripheral wall and inserted into the housing portion; And a second lead frame (30) made of a metal material having an inner end (31) extending so as to face the inner end of the one-side lead frame. One of the two lead frames (3
The LED chip, the respective inner ends of the two lead frames and the conductive material are disposed in the housing portion of the LED body having the LED chip (40) mounted on the inner end of the LED frame via the conductive adhesive layer (50). A method of manufacturing a surface-mounted light-emitting diode by filling a light-transmitting thermosetting resin and thermosetting to form a sealing member (60) so as to seal the adhesive layer. The member is heated for a temporary curing time at a temperature slightly lower than the thermosetting temperature of the thermosetting resin, and thereafter, the thermosetting resin is fully cured at a temperature slightly higher than the thermosetting temperature, Then, the thermosetting resin is annealed at a temperature slightly lower than the soldering temperature of the two lead frames for an annealing time.
であり、前記熱硬化温度よりも少し低い温度は90℃で
あり、前記熱硬化温度よりも少し高い温度は135℃で
あり、前記はんだ付け温度よりも少し低い温度は190
℃であり、前記仮硬化時間は2時間であり、前記本硬化
時間及びアニール時間は、共に、4時間であることを特
徴とする請求項3に記載の表面実装型発光ダイオードの
製造方法。4. The thermosetting resin is a translucent epoxy resin, a temperature slightly lower than the thermosetting temperature is 90 ° C., a temperature slightly higher than the thermosetting temperature is 135 ° C., The temperature slightly lower than the soldering temperature is 190
4. The method of claim 3, wherein the temporary curing time is 2 hours, and the main curing time and the annealing time are both 4 hours. 5.
収容部(12)を凹状に形成してなる電気絶縁樹脂製ケ
ーシング(10)と、このケーシングにその周壁の一側
部(13)から挿入されて前記収容部内にその底面(1
2b)に沿い内端部(21)を延出してなる金属材料か
らなる一側リードフレーム(20)と、前記ケーシング
にその周壁の他側部(15)から挿入されて前記収容部
内にその底面に沿い前記一側リードフレームの内端部に
対向するように延出する内端部(31)を有してなる金
属材料からなる他側リードフレーム(30)と、前記収
容部内に収容されて前記両リードフレームの一方(3
0)の内端部上に導電性接着層(50)を介し装着した
LEDチップ(40)とを有するLED本体の前記収容
部内に、前記LEDチップ、両リードフレームの各内端
部及び導電性接着層を封止するように、透光性のある熱
硬化性樹脂を充填して熱硬化させて封止部材(60)と
することで表面実装型発光ダイオードを製造する方法に
おいて、 前記封止部材を、前記熱硬化性樹脂をその熱硬化温度よ
りも少し低い温度から前記両リードフレームのはんだ付
け温度よりも少し低い温度にかけて所定時間の間加熱す
ることを特徴とする表面実装型発光ダイオードの製造方
法。5. An electrically insulating resin casing (10) having a recess (12) formed so as to open outward on an upper wall (11), and one side of a peripheral wall of the casing. (13) and is inserted into the housing portion at its bottom surface (1).
A one-side lead frame (20) made of a metal material extending along an inner end portion (21) along 2b), and a bottom surface inserted into the casing from the other side portion (15) of the peripheral wall and inserted into the housing portion; And a second lead frame (30) made of a metal material having an inner end (31) extending so as to face the inner end of the one-side lead frame. One of the two lead frames (3
The LED chip, the respective inner ends of the two lead frames and the conductive material are disposed in the housing portion of the LED body having the LED chip (40) mounted on the inner end of the LED frame via the conductive adhesive layer (50). A method of manufacturing a surface-mounted light-emitting diode by filling a light-transmitting thermosetting resin and thermosetting to form a sealing member (60) so as to seal the adhesive layer. Wherein the member is heated for a predetermined time from a temperature slightly lower than the thermosetting temperature of the thermosetting resin to a temperature slightly lower than the soldering temperature of the two lead frames. Production method.
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JP2000196971A JP4070940B2 (en) | 2000-06-29 | 2000-06-29 | Manufacturing method of surface mount type light emitting diode |
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JP2000196971A JP4070940B2 (en) | 2000-06-29 | 2000-06-29 | Manufacturing method of surface mount type light emitting diode |
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JP2005142236A (en) * | 2003-11-04 | 2005-06-02 | Nichia Chem Ind Ltd | Light emitting device |
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JP2009206370A (en) * | 2008-02-28 | 2009-09-10 | Apic Yamada Corp | Substrate for led package, method for manufacturing substrate for led package, molding metal mold for substrate for led package, led package and method for manufacturing led package |
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2000
- 2000-06-29 JP JP2000196971A patent/JP4070940B2/en not_active Expired - Fee Related
Cited By (11)
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JP2002223002A (en) * | 2001-01-26 | 2002-08-09 | Nichia Chem Ind Ltd | Package molded object and light emitting device |
JP2005142236A (en) * | 2003-11-04 | 2005-06-02 | Nichia Chem Ind Ltd | Light emitting device |
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