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JP2002008804A - Electrical property testing device for semiconductor device - Google Patents

Electrical property testing device for semiconductor device

Info

Publication number
JP2002008804A
JP2002008804A JP2000193128A JP2000193128A JP2002008804A JP 2002008804 A JP2002008804 A JP 2002008804A JP 2000193128 A JP2000193128 A JP 2000193128A JP 2000193128 A JP2000193128 A JP 2000193128A JP 2002008804 A JP2002008804 A JP 2002008804A
Authority
JP
Japan
Prior art keywords
semiconductor device
external lead
measuring terminal
electrical characteristics
testing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000193128A
Other languages
Japanese (ja)
Other versions
JP4106859B2 (en
Inventor
Makoto Saito
誠 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP2000193128A priority Critical patent/JP4106859B2/en
Publication of JP2002008804A publication Critical patent/JP2002008804A/en
Application granted granted Critical
Publication of JP4106859B2 publication Critical patent/JP4106859B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)
  • Connecting Device With Holders (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an electric property testing device for a semiconductor device capable of effectively preventing unfavorable appearance due to particles and improper electrical property (shoot, etc.), in the next test process. SOLUTION: A PKG 1 is guided by up and down PKG pressers 3, 4 and is brought into contact with a measuring terminal 5 by a lead presser 9 to conduct a test. This measuring terminal 5 employs a rotary roller (disc-like roller) to prevent contact resistance and rubbing of an external lead 2 and the measuring terminal 5 by its rotation and prevent the destruction of a soldered and plated film applied on a surface of the external lead 2.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体装置(以
降、IC)の電気的特性試験(以降テスト)装置に関す
るものである。
[0001] 1. Field of the Invention [0002] The present invention relates to an electrical characteristic test (hereinafter, test) apparatus for a semiconductor device (hereinafter, IC).

【0002】[0002]

【従来の技術】一般にICのテスト方法は、IC外部リ
ード(以降リード)と通電性の優れた測定端子を接触さ
せることで行われている。特にソケット方式と呼ばれる
テスト方法では、接触不良によるテスト不良品の発生を
防止するため、測定時に圧力をかけるようにしている。
2. Description of the Related Art In general, an IC test method is performed by bringing an external lead (hereinafter referred to as a lead) of an IC into contact with a measuring terminal having excellent conductivity. In particular, in a test method called a socket method, pressure is applied at the time of measurement in order to prevent the occurrence of a defective test due to poor contact.

【0003】すなわち、リード先端上面にリードプッシ
ャーで一定圧力を加え、リード先端下面に測定端子で電
気的接触を得るようにしている。
[0003] That is, a constant pressure is applied to the upper surface of the lead tip by a lead pusher, and electrical contact is made to the lower surface of the lead by a measurement terminal.

【0004】図7はかかる従来のICのテスト装置の要
部構成図である。
FIG. 7 is a block diagram of a main part of such a conventional IC test apparatus.

【0005】この図において、101はパッケージ(P
KG)、102は外部リード、103は測定端子、10
4はリード押え、点線は測定圧力により、パッケージ
(PKG)101を下方へ押し込んだ状態を示す図であ
り、dはリード押えによる押し込み量を示している。
In FIG. 1, reference numeral 101 denotes a package (P
KG), 102 is an external lead, 103 is a measuring terminal, 10
4 is a view showing a state in which the package (PKG) 101 is pushed downward by the measured pressure, and d indicates a pushing amount by the lead holding.

【0006】このように、その測定圧力によって、パッ
ケージ(PKG)101を下方へ押し込むことになり、
測定端子103は外部リード102先端下面と接触す
る。
As described above, the package (PKG) 101 is pushed downward by the measured pressure.
The measurement terminal 103 contacts the lower surface of the tip of the external lead 102.

【0007】[0007]

【発明が解決しようとする課題】以上のように、ソケッ
ト方式に於ける測定圧力は、接触不良を防ぐには必要不
可欠である。
As described above, the measured pressure in the socket system is indispensable for preventing a contact failure.

【0008】しかしながら、このような測定方法によれ
ば、 測定端子は擦れ、外部リード102表面に施された半
田めっきは破壊され、半田屑を発生させる。これは測定
端子103が円弧を描く、バネ性を保有する構造に加
え、測定端子103の製造加工におけるプレスによる加
工面(剪断、破断)の粗さが摩擦抵抗を上げていること
にも起因する。
However, according to such a measuring method, the measuring terminal is rubbed, and the solder plating applied to the surface of the external lead 102 is broken, and solder dust is generated. This is due to the fact that the roughness of the processing surface (shear, break) by press in the manufacturing process of the measurement terminal 103 increases the frictional resistance, in addition to the structure in which the measurement terminal 103 draws an arc and retains the spring property. .

【0009】また、測定箇所が、外部リード102先端
下面のみという測定面積が小さいことも測定圧力の必要
性を高めている一因と言える。
[0009] The fact that the measurement area is small, ie, only the lower surface of the tip of the external lead 102, can be said to be one of the factors that increase the need for measurement pressure.

【0010】本発明は、上記問題点を除去し、半田屑に
よる概観不良、及び次テスト工程での電気的特性不良
(シュート等)を効果的に防止することができる半導体
装置の電気的特性試験装置を提供することを目的とす
る。
The present invention eliminates the above-mentioned problems, and provides an electrical characteristic test for a semiconductor device capable of effectively preventing an appearance defect due to solder dust and an electrical characteristic defect (such as a chute) in the next test step. It is intended to provide a device.

【0011】[0011]

【課題を解決するための手段】本発明は、上記目的を達
成するために、 〔1〕電気的特性試験時における測定端子部が外部リー
ドの押えにより前記外部リードの先端部を擦過すること
なく接触させる機構的手段を具備することを特徴とす
る。
According to the present invention, in order to achieve the above object, [1] a measuring terminal portion at the time of an electrical characteristic test does not rub the tip of the external lead by pressing the external lead. It is characterized by comprising mechanical means for making contact.

【0012】〔2〕上記〔1〕記載の半導体装置の電気
的特性試験装置において、前記機構的手段は、回転ロー
ラである測定端子部であることを特徴とする。
[2] In the apparatus for testing electrical characteristics of a semiconductor device according to the above [1], the mechanical means is a measuring terminal portion which is a rotating roller.

【0013】〔3〕上記〔1〕記載の半導体装置の電気
的特性試験装置において、前記機構的手段は、前記外部
リードのパッケージの根元部分に接触する測定端子部で
あることを特徴とする。
[3] The apparatus for testing electrical characteristics of a semiconductor device according to the above [1], wherein the mechanical means is a measuring terminal portion which comes into contact with a root portion of a package of the external lead.

【0014】〔4〕上記〔3〕記載の半導体装置の電気
的特性試験装置において、前記機構的手段は、前記測定
端子部は上下に2個配置され、前記外部リードのパッケ
ージの根元部分を挟むようにしたことを特徴とする。
[4] In the apparatus for testing electrical characteristics of a semiconductor device according to the above [3], the mechanical means has two measurement terminals arranged vertically and sandwiches a root portion of a package of the external lead. It is characterized by doing so.

【0015】〔5〕上記〔1〕記載の半導体装置の電気
的特性試験装置において、前記機構的手段は、前記外部
リードの先端部が浸漬される溶融金属浴槽を有する測定
端子部を備えることを特徴とする。
[5] The apparatus for testing electrical characteristics of a semiconductor device according to the above [1], wherein the mechanical means comprises a measuring terminal having a molten metal bath in which a tip of the external lead is immersed. Features.

【0016】[0016]

【発明の実施の形態】以下、本発明の実施の形態を詳細
に説明する。
Embodiments of the present invention will be described below in detail.

【0017】図1は本発明の第1実施例を示す半導体装
置の電気的特性試験装置の要部断面図、図2はその電気
的特性試験装置の要部斜視図である。
FIG. 1 is a sectional view of a main part of a device for testing electrical characteristics of a semiconductor device according to a first embodiment of the present invention, and FIG. 2 is a perspective view of a main part of the device for testing electrical characteristics.

【0018】これらの図において、1は樹脂封止された
パッケージ(PKG)、2は外部リード、3は上部パッ
ケージ押え、4は下部パッケージ押え、5は測定端子、
6はその測定端子5の下部に配置され、下部よりバネ7
により偏倚されるパンタグラフ、8はパンタグラフ6の
保持体、9はリード押えである。
In these figures, 1 is a resin-sealed package (PKG), 2 is an external lead, 3 is an upper package holder, 4 is a lower package holder, 5 is a measurement terminal,
Reference numeral 6 denotes a lower part of the measuring terminal 5 and a spring 7 from the lower part.
, 8 is a holder for the pantograph 6, and 9 is a lead holder.

【0019】これらの図に示すように、PKG1は、上
下のPKG押え3,4でガイドされ、リード押え9によ
って測定端子5に接触させてテストを行う。この測定端
子5は、回転ローラー(円板状のローラー)を用い、外
部リード2と測定端子5の接触抵抗、及び擦れを回転す
ることによって防ぎ、外部リード2表面に施された半田
めっき被膜の破壊を防止する。
As shown in these figures, the PKG 1 is guided by upper and lower PKG presses 3 and 4 and is brought into contact with the measuring terminal 5 by a lead press 9 to perform a test. The measurement terminal 5 uses a rotating roller (a disk-shaped roller) to prevent the contact resistance and rubbing between the external lead 2 and the measurement terminal 5 by rotating, and to prevent the solder plating film applied to the surface of the external lead 2 from rotating. Prevent destruction.

【0020】このように構成したので、従来技術で問題
となった、半田屑による概観不良、及び次テスト工程で
の電気的特性不良(シュート等)を効果的に防止するこ
とができる。
With this configuration, it is possible to effectively prevent the appearance defect due to the solder dust and the electric characteristic defect (such as a chute) in the next test step, which are problems in the prior art.

【0021】次に、本発明の第2実施例について説明す
る。
Next, a second embodiment of the present invention will be described.

【0022】図3は本発明の第2実施例を示す半導体装
置の電気的特性試験装置の要部断面図、図4はその電気
的特性試験装置の要部斜視図である。
FIG. 3 is a cross-sectional view of a main part of a device for testing electrical characteristics of a semiconductor device according to a second embodiment of the present invention, and FIG. 4 is a perspective view of a main part of the device for testing electrical characteristics.

【0023】これらの図において、11は樹脂封止され
たPKG、12は外部リード、13は上部パッケージ押
え、14は下部パッケージ押え、15は下部の第1の測
定端子、16は上部の第2の測定端子、17はリード押
えである。
In these figures, 11 is a resin-sealed PKG, 12 is an external lead, 13 is an upper package holder, 14 is a lower package holder, 15 is a lower first measuring terminal, and 16 is an upper second terminal. Is a measuring terminal, and 17 is a lead holder.

【0024】PKG11は上下のPKG押え13,14
により、ガイドされたPKG11の外部リード12を変
形から防止するため、リード押え17で保護し、上下P
KG押さえ13,14とリード押え17の中央に上下か
ら外部リード12を挟み込むように、第1の測定端子1
5と第2の測定端子16を配置してテストを行う。つま
り、第1、第2の測定端子15,16は外部リード12
の強度の高いPKG11の付け根部分12Aで接触する
ようにする。外部リード12の強度の高いPKG11の
付け根部分12Aを上下から第1の測定端子15と第2
の測定端子16で挟むことで、接触不良の確率の低減が
でき、リード押え17による外部リード12の高さバラ
ツキも矯正することができる。ここで、第1の測定端子
15と第2の測定端子16の先端部は折り返し部を有し
ている。
PKG 11 includes upper and lower PKG pressers 13 and 14.
In order to prevent the external lead 12 of the PKG 11 guided from being deformed,
The first measuring terminal 1 is inserted between the KG holders 13 and 14 and the lead holder 17 so as to sandwich the external lead 12 from above and below.
5 and the second measurement terminal 16 are arranged and a test is performed. That is, the first and second measurement terminals 15 and 16 are connected to the external leads 12.
In contact with the base portion 12A of the PKG 11 having high strength. The base portion 12A of the PKG 11 having high strength of the external lead 12 is connected to the first measuring terminal 15 and the second
Of the external lead 12 caused by the lead holder 17 can be corrected. Here, the distal ends of the first measuring terminal 15 and the second measuring terminal 16 have a folded portion.

【0025】また、外部リード12の先端で第1、第2
の測定端子15,16との接触をとるので、測定端子1
5,16は外部リード12表面の半田被膜を擦らないこ
とになり、半田屑の発生を抑制することができる。
The first and second ends of the external lead 12 are
Contact with the measurement terminals 15 and 16 of the
Nos. 5 and 16 do not rub the solder coating on the surface of the external lead 12 and can suppress the generation of solder dust.

【0026】さらに、第1、第2の測定端子15,16
の表面を加工面の粗いままでなく、研磨をすることによ
り摩擦抵抗が低減できるため、より一層の効果が得られ
る。
Further, the first and second measurement terminals 15 and 16
The frictional resistance can be reduced by polishing the surface of the substrate without polishing the surface to be processed, so that a further effect can be obtained.

【0027】なお、上記実施例では、上下から第1の測
定端子15と第2の測定端子16で挟む構成としたが、
何れか片側の測定端子のみで構成するようにしてもよ
い。
In the above embodiment, the first measuring terminal 15 and the second measuring terminal 16 are sandwiched from above and below.
It may be configured with only one of the measurement terminals.

【0028】次に、本発明の第3実施例について説明す
る。
Next, a third embodiment of the present invention will be described.

【0029】図5は本発明の第3実施例を示す半導体装
置の電気的特性試験装置の要部断面図、図6はその電気
的特性試験装置の要部斜視図である。
FIG. 5 is a sectional view of an essential part of an apparatus for testing electrical characteristics of a semiconductor device according to a third embodiment of the present invention, and FIG. 6 is a perspective view of an essential part of the apparatus for testing electrical characteristics of the semiconductor device.

【0030】これらの図において、21は樹脂封止され
たPKG、22は外部リード、23は上部PKG押え、
24は下部PKG押え、25は溶融半田槽、26は溶融
半田供給パイプ、27はリード押えである。
In these figures, 21 is a resin-sealed PKG, 22 is an external lead, 23 is an upper PKG holder,
24 is a lower PKG holder, 25 is a molten solder tank, 26 is a molten solder supply pipe, and 27 is a lead holder.

【0031】この実施例では、測定端子としては、金属
剛体を使わず、溶融金属(例えば半田)25で代用し、
外部リード22を、溶融金属25中に浸漬させることで
電気的接続を得るものである。測定端子22を溶融金属
にすることで、接触抵抗は皆無となり、かつ外部リード
22に施された半田めっきの破壊も防ぐことが出来、半
田屑の発生もない。また、この時、測定端子部に溶融半
田槽25を用いているので、リード加工工程にて受けた
半田メッキの傷、欠損も測定時に付着する溶融半田で補
える効果もある。
In this embodiment, a rigid metal is not used as a measuring terminal, but a molten metal (for example, solder) 25 is used instead.
The electrical connection is obtained by immersing the external leads 22 in the molten metal 25. When the measuring terminal 22 is made of a molten metal, there is no contact resistance, the breakage of the solder plating applied to the external lead 22 can be prevented, and no solder dust is generated. Further, at this time, since the molten solder tank 25 is used for the measurement terminal portion, there is also an effect that the scratches and defects of the solder plating received in the lead processing step can be compensated for by the molten solder attached at the time of measurement.

【0032】なお、本発明は上記実施例に限定されるも
のではなく、本発明の趣旨に基づいて種々の変形が可能
であり、これらを本発明の範囲から排除するものではな
い。
It should be noted that the present invention is not limited to the above-described embodiments, and various modifications are possible based on the spirit of the present invention, and these are not excluded from the scope of the present invention.

【0033】[0033]

【発明の効果】以上、詳細に説明したように、本発明に
よれば、以下のような効果を奏することができる。
As described above, according to the present invention, the following effects can be obtained.

【0034】(A)測定端子は、回転ローラー(円板状
のローラー)を用い、外部リードと測定端子の接触抵
抗、及び擦れを回転することによって防ぎ、外部リード
表面に施された半田めっき被膜の破壊を防止することが
できる。
(A) The measurement terminal uses a rotating roller (disk-shaped roller) to prevent the contact resistance and rubbing between the external lead and the measurement terminal by rotating, and a solder plating film applied to the surface of the external lead. Can be prevented from being destroyed.

【0035】したがって、半田屑による概観不良、及び
次テスト工程での電気的特性不良(シュート等)を効果
的に防止することができる。
Therefore, it is possible to effectively prevent poor appearance due to solder dust and poor electrical characteristics (such as chute) in the next test step.

【0036】(B)外部リードの先端で測定端子との接
触をとるので、測定端子は外部リード表面の半田被膜を
擦らないことになり、半田屑の発生を抑制できる。
(B) Since the tip of the external lead makes contact with the measurement terminal, the measurement terminal does not rub the solder coating on the surface of the external lead, and the generation of solder dust can be suppressed.

【0037】(C)外部リードを、溶融金属中に浸漬さ
せることで電気的接続を得るものである。測定端子を溶
融金属にすることで、接触抵抗は皆無となり、かつ外部
リードに施された半田めっきの破壊も防ぐことが出来、
半田屑の発生もない。
(C) The electrical connection is obtained by immersing the external leads in the molten metal. By making the measuring terminal a molten metal, there is no contact resistance, and it is possible to prevent the destruction of the solder plating applied to the external leads,
There is no generation of solder waste.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1実施例を示す半導体装置の電気的
特性試験装置の要部断面図である。
FIG. 1 is a sectional view of a main part of an apparatus for testing electrical characteristics of a semiconductor device according to a first embodiment of the present invention.

【図2】本発明の第1実施例を示す半導体装置の電気的
特性試験装置の要部斜視図である。
FIG. 2 is a perspective view of a main part of an apparatus for testing electrical characteristics of a semiconductor device according to a first embodiment of the present invention.

【図3】本発明の第2実施例を示す半導体装置の電気的
特性試験装置の要部断面図である。
FIG. 3 is a sectional view of a main part of a device for testing electrical characteristics of a semiconductor device according to a second embodiment of the present invention;

【図4】本発明の第2実施例を示す半導体装置の電気的
特性試験装置の要部斜視図である。
FIG. 4 is a perspective view of a main part of an apparatus for testing electrical characteristics of a semiconductor device according to a second embodiment of the present invention.

【図5】本発明の第3実施例を示す半導体装置の電気的
特性試験装置の要部断面図である。
FIG. 5 is a sectional view of a main part of an apparatus for testing electrical characteristics of a semiconductor device according to a third embodiment of the present invention.

【図6】本発明の第3実施例を示す半導体装置の電気的
特性試験装置の要部斜視図である。
FIG. 6 is a perspective view of a main part of an apparatus for testing electrical characteristics of a semiconductor device according to a third embodiment of the present invention.

【図7】従来の半導体装置の電気的特性試験装置の要部
斜視図である。
FIG. 7 is a perspective view of a main part of a conventional electrical characteristic testing apparatus for a semiconductor device.

【符号の説明】[Explanation of symbols]

1,11,21 樹脂封止されたパッケージ(PK
G) 2,12,22 外部リード 3,13,23 上部パッケージ押え 4,14,24 下部パッケージ押え 5 測定端子 6 パンタグラフ 7 バネ 8 パンタグラフの保持体 9,17,27 リード押え 12A 外部リードのPKGの付け根部分 15 下部の第1の測定端子 16 上部の第2の測定端子 25 溶融半田槽 26 溶融半田供給パイプ
1,11,21 Package sealed with resin (PK
G) 2,12,22 External lead 3,13,23 Upper package holder 4,14,24 Lower package holder 5 Measurement terminal 6 Pantograph 7 Spring 8 Pantograph holder 9,17,27 Lead holder 12A PKG of external lead Root portion 15 Lower first measuring terminal 16 Upper second measuring terminal 25 Molten solder tank 26 Molten solder supply pipe

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 電気的特性試験時における測定端子部が
外部リードの押えにより前記外部リードの先端部を擦過
することなく接触させる機構的手段を具備することを特
徴とする半導体装置の電気的特性試験装置。
1. An electrical characteristic of a semiconductor device, comprising: mechanical means for causing a measurement terminal portion to contact a tip end of the external lead without being rubbed by pressing of the external lead during an electrical characteristic test. Testing equipment.
【請求項2】 請求項1記載の半導体装置の電気的特性
試験装置において、前記機構的手段は、回転ローラであ
る測定端子部であることを特徴とする半導体装置の電気
的特性試験装置。
2. An apparatus for testing electrical characteristics of a semiconductor device according to claim 1, wherein said mechanical means is a measuring terminal portion which is a rotating roller.
【請求項3】 請求項1記載の半導体装置の電気的特性
試験装置において、前記機構的手段は、前記外部リード
のパッケージの根元部分に接触する測定端子部であるこ
とを特徴とする半導体装置の電気的特性試験装置。
3. The semiconductor device electrical characteristic testing apparatus according to claim 1, wherein said mechanical means is a measuring terminal portion which contacts a root portion of a package of said external lead. Electrical characteristics test equipment.
【請求項4】 請求項3記載の半導体装置の電気的特性
試験装置において、前記機構的手段は、前記測定端子部
は上下に2個配置され、前記外部リードのパッケージの
根元部分を挟むようにしたことを特徴とする半導体装置
の電気的特性試験装置。
4. An electrical characteristic testing apparatus for a semiconductor device according to claim 3, wherein said mechanical means is arranged such that two of said measuring terminals are arranged vertically and sandwich a root portion of said external lead package. An apparatus for testing electrical characteristics of a semiconductor device, comprising:
【請求項5】 請求項1記載の半導体装置の電気的特性
試験装置において、前記機構的手段は、前記外部リード
の先端部が浸漬される溶融金属浴槽を有する測定端子部
を備えることを特徴とする半導体装置の電気的特性試験
装置。
5. An apparatus for testing electrical characteristics of a semiconductor device according to claim 1, wherein said mechanical means includes a measuring terminal having a molten metal bath in which a tip of said external lead is immersed. For testing electrical characteristics of semiconductor devices.
JP2000193128A 2000-06-27 2000-06-27 Semiconductor device electrical characteristics test equipment Expired - Fee Related JP4106859B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000193128A JP4106859B2 (en) 2000-06-27 2000-06-27 Semiconductor device electrical characteristics test equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000193128A JP4106859B2 (en) 2000-06-27 2000-06-27 Semiconductor device electrical characteristics test equipment

Publications (2)

Publication Number Publication Date
JP2002008804A true JP2002008804A (en) 2002-01-11
JP4106859B2 JP4106859B2 (en) 2008-06-25

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Country Link
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005019121A (en) * 2003-06-25 2005-01-20 Enplas Corp Carrier for electrical component
WO2008094831A1 (en) * 2007-01-29 2008-08-07 Electro Scientific Industries, Inc. Adjustable force electrical contactor
US7609078B2 (en) 2007-12-21 2009-10-27 Electro Scientific Industries, Inc. Contact alignment verification/adjustment fixture
US7888949B2 (en) 2008-03-21 2011-02-15 Electro Scientific Industries, Inc. Electrical tester setup and calibration device
TWI579951B (en) * 2015-11-17 2017-04-21 京元電子股份有限公司 Turn-over device of semiconductor element and testing apparatus thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005019121A (en) * 2003-06-25 2005-01-20 Enplas Corp Carrier for electrical component
WO2008094831A1 (en) * 2007-01-29 2008-08-07 Electro Scientific Industries, Inc. Adjustable force electrical contactor
US7609078B2 (en) 2007-12-21 2009-10-27 Electro Scientific Industries, Inc. Contact alignment verification/adjustment fixture
US7888949B2 (en) 2008-03-21 2011-02-15 Electro Scientific Industries, Inc. Electrical tester setup and calibration device
TWI579951B (en) * 2015-11-17 2017-04-21 京元電子股份有限公司 Turn-over device of semiconductor element and testing apparatus thereof

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