JP2002064178A - Method of manufacturing semiconductor module - Google Patents
Method of manufacturing semiconductor moduleInfo
- Publication number
- JP2002064178A JP2002064178A JP2000248592A JP2000248592A JP2002064178A JP 2002064178 A JP2002064178 A JP 2002064178A JP 2000248592 A JP2000248592 A JP 2000248592A JP 2000248592 A JP2000248592 A JP 2000248592A JP 2002064178 A JP2002064178 A JP 2002064178A
- Authority
- JP
- Japan
- Prior art keywords
- opening
- hole
- bump
- conductive
- conductive bump
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体モジュール
の製造方法に関するものである。[0001] The present invention relates to a method for manufacturing a semiconductor module.
【0002】[0002]
【従来の技術】近年には、ICチップの高密度実装化に
対応するために、ICチップを積層した半導体モジュー
ルを製造する技術が開発されてきている。例えば、特開
平9−219490号公報、特開平10−135267
号公報、及び特開平10−163414号公報には、そ
のような積層パッケージが開示されている。2. Description of the Related Art In recent years, in order to cope with high-density mounting of IC chips, a technique for manufacturing a semiconductor module in which IC chips are stacked has been developed. For example, JP-A-9-219490, JP-A-10-135267
Japanese Patent Application Laid-Open No. Hei 10-163414 discloses such a stacked package.
【0003】このような従来の技術では、TSOP(Th
in Small Outline Package)、TCP(Tape Carrier P
ackage)、BGA(Ball Grid Array)等のICパッケ
ージを一層毎に組み立てた後に、複数のICパッケージ
を積層する。このとき、各層間は、予め各パッケージに
設けられた外部接続用の端子を介して接続される。この
ように従来の工法では、多くの製造工程を経なければな
らないことから、加工コストが増加していた。In such a conventional technique, TSOP (Th
in Small Outline Package), TCP (Tape Carrier P)
After assembling IC packages such as a package and a BGA (Ball Grid Array) for each layer, a plurality of IC packages are stacked. At this time, the respective layers are connected via external connection terminals provided in advance in the respective packages. As described above, in the conventional method, many manufacturing steps have to be performed, so that the processing cost has increased.
【0004】ところで、図8および図9には、上記のよ
うな従来の工法により製造された積層パッケージを示し
た。図8に示すものは、樹脂でモールドされたパッケー
ジを積層したものである。また、図9は、図8のモジュ
ール基板の平面図である。このICパッケージ100
A、100Bには、IC実装部106と、その上面に実
装されたICチップ102と、ICチップ102と外部
部品とを接続するリード101と、ICチップ102と
リード101とを樹脂内部で接続するボンディングワイ
ヤ103とが設けられている。また、ICチップ102
を含む所定の領域は、樹脂体104により被覆されてい
る。FIGS. 8 and 9 show a laminated package manufactured by the above-described conventional method. The one shown in FIG. 8 is a stack of packages molded with resin. FIG. 9 is a plan view of the module substrate of FIG. This IC package 100
A and 100B have an IC mounting portion 106, an IC chip 102 mounted on the upper surface thereof, leads 101 connecting the IC chip 102 and external components, and connecting the IC chip 102 and the leads 101 inside the resin. A bonding wire 103 is provided. Also, the IC chip 102
Is covered with the resin body 104.
【0005】このような構造のICパッケージ100A
の上側には、他のICパッケージ100Bが積層された
状態とされて、基板105に実装されている。[0005] The IC package 100A having such a structure.
On the upper side, another IC package 100B is stacked and mounted on the substrate 105.
【0006】[0006]
【発明が解決しようとする課題】上記のICパッケージ
100A、100Bを厚さ方向に積み重ねて、基板10
5に実装しようとすると、樹脂体104の厚みのために
総モジュール厚が厚くなってしまうという問題がある。
また、ICパッケージ100A、100Bを横方向に基
板105に実装する場合には、総モジュールが大きくな
るという問題がある。さらに、上下のパッケージ100
A、100Bは、それぞれのリード101によって基板
105に接続されているので、パッケージ100A、1
00Bの積層時に位置ずれが生じると、リード101間
が短絡してしまう可能性があった。The above-mentioned IC packages 100A and 100B are stacked in the thickness direction to form a substrate 10
5, there is a problem that the total module thickness is increased due to the thickness of the resin body 104.
Further, when the IC packages 100A and 100B are mounted on the substrate 105 in the horizontal direction, there is a problem that the total module becomes large. Further, the upper and lower packages 100
A and 100B are connected to the substrate 105 by respective leads 101, so that the packages 100A and 100B
If the misalignment occurs during the stacking of 00B, there is a possibility that the leads 101 will be short-circuited.
【0007】今後は、例えばICカードや携帯電話等の
電子機器の小型化に伴い、ICパッケージに対しても、
更なる高密度化と薄型化が図られると考えられている
が、従来の工法によっては、そのような高密度・薄型化
を図ることは困難である。[0007] In the future, with the miniaturization of electronic devices such as IC cards and mobile phones, for IC packages,
It is considered that further densification and thinning can be achieved, but it is difficult to achieve such high density and thinning by a conventional method.
【0008】この問題を解決するためには、ICチップ
102を樹脂体104でモールドする構成を変更し、例
えばプリント基板を層間部材を介して積層しながらその
層間にICチップを実装するという構成が考えられる。
そのような構成を採用した場合には、層間部材に形成さ
せた導電性バンプによって、その表裏に配されるプリン
ト基板の導体回路を電気的に接続することが必要であ
る。In order to solve this problem, the configuration in which the IC chip 102 is molded with the resin body 104 is changed. For example, a configuration is adopted in which the printed circuit boards are stacked via interlayer members and the IC chips are mounted between the layers. Conceivable.
When such a configuration is employed, it is necessary to electrically connect the conductive circuits of the printed circuit boards arranged on the front and back sides by conductive bumps formed on the interlayer member.
【0009】ここで、プリント基板としては、一面側に
配線回路が形成され、他面側にこの導体回路と電気的に
接続されたバンプを備えた構成のものが使用されること
がある。この場合には、プリント基板の配線回路の一部
に形成されたランドおよび配線回路と接続されたバンプ
が、それぞれ層間部材の導電性バンプと接続されること
によって、配線回路間の導通が図られる。Here, as the printed circuit board, there is a case where a wiring circuit is formed on one side and a bump is electrically connected to the conductor circuit on the other side. In this case, the lands formed on a part of the wiring circuit of the printed circuit board and the bumps connected to the wiring circuit are respectively connected to the conductive bumps of the interlayer member, thereby achieving conduction between the wiring circuits. .
【0010】しかしながら、上記のような構成のプリン
ト基板と層間部材とを積層して接着する際には、プレス
により位置ずれを生じてしまうおそれがある。このと
き、バンプとランドとの接続にあっては、ランドが導電
性バンプよりも大きな径を備えて形成されているため
に、位置ずれ誤差を吸収して接触性を保持することが可
能である。しかし、バンプ同士の接続にあっては、両バ
ンプの径がほぼ等しく形成されているために、位置ずれ
誤差を吸収することができず、接続信頼性が損なわれる
おそれがある。However, when the printed circuit board having the above-described structure and the interlayer member are laminated and bonded to each other, there is a possibility that a displacement may occur due to pressing. At this time, in the connection between the bump and the land, since the land is formed with a larger diameter than the conductive bump, it is possible to absorb the positional deviation error and maintain the contact property. . However, in the connection between the bumps, since the diameters of the two bumps are substantially equal, the displacement error cannot be absorbed, and the connection reliability may be impaired.
【0011】本発明は、上記した事情に鑑みてなされた
ものであり、その目的は、接続信頼性を高めることので
きる積層型の半導体モジュールを製造できる方法を提供
することにある。The present invention has been made in view of the above-mentioned circumstances, and an object of the present invention is to provide a method for manufacturing a stacked semiconductor module capable of improving connection reliability.
【0012】[0012]
【課題を解決するための手段】上記の課題を解決するた
めの請求項1の発明に係る半導体モジュールの製造方法
は、一面側に所定の配線回路を形成させて半導体チップ
を実装するとともに他面側に前記配線回路と接続された
基板側バンプを突設させた複数枚のプリント基板を、前
記配線回路および基板側バンプに接続可能な導電性バン
プと前記半導体チップを収容可能な開口部とを備えた層
間部材を介して積層する半導体モジュールの製造方法で
あって、(a)前記層間部材となる絶縁性基材の厚さ方向
に貫通するとともに一面側の開口よりも他面側の開口が
大きな径を備えたスルーホールを形成する工程(b)前記
スルーホールに導電性ペーストを充填することにより、
前記一面側の開口に第一の導電性バンプを形成するとと
もに、前記他面側の開口に前記第一の導電性バンプより
も大きな径を備えた第二の導電性バンプを形成する工程
(c)前記絶縁性基材に前記開口部を形成する工程(d)前記
第一の導電性バンプが前記配線回路と接続し、前記第二
の導電性バンプが前記基板側パンプと接続するように前
記プリント基板と前記層間部材とを交互に積層する工程
を経ることを特徴とする。According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor module, comprising: forming a predetermined wiring circuit on one surface side to mount a semiconductor chip; A plurality of printed boards, on the side of which a board-side bump connected to the wiring circuit protrudes, a conductive bump connectable to the wiring circuit and the board-side bump and an opening capable of accommodating the semiconductor chip. A method for manufacturing a semiconductor module to be laminated via an interlayer member provided, wherein (a) the opening on the other surface side than the opening on one surface side penetrates in the thickness direction of the insulating base material serving as the interlayer member. Step (b) of forming a through hole having a large diameter by filling the through hole with a conductive paste,
Forming a first conductive bump in the opening on the one surface side and forming a second conductive bump having a larger diameter than the first conductive bump in the opening on the other surface side
(c) a step of forming the opening in the insulating base material (d) the first conductive bump is connected to the wiring circuit, and the second conductive bump is connected to the substrate-side pump. And a step of alternately laminating the printed circuit board and the interlayer member.
【0013】このとき、第一の導電性バンプと第二の導
電性バンプとの径の比率は、好ましくは1:2〜1:3
であり、より好ましくは1:2〜1:2.5である。At this time, the ratio of the diameter of the first conductive bump to the diameter of the second conductive bump is preferably 1: 2 to 1: 3.
And more preferably 1: 2 to 1: 2.5.
【0014】請求項2の発明は、請求項1に記載の半導
体モジュールの製造方法であって、前記スルーホール
を、前記他面側の開口側からレーザを照射することによ
り形成することを特徴とする。According to a second aspect of the present invention, there is provided the method of manufacturing a semiconductor module according to the first aspect, wherein the through-hole is formed by irradiating a laser from the opening on the other surface. I do.
【0015】請求項3の発明は、請求項1に記載の半導
体モジュールの製造方法であって、前記スルーホール
を、前記他面側の開口側から所定の深さの凹部を凹設
し、前記凹部の底面から前記一面側の開口側に貫通する
とともに前記凹部よりも小さな径を備えた貫通孔を開け
ることによって形成することを特徴とする。According to a third aspect of the present invention, there is provided the method of manufacturing a semiconductor module according to the first aspect, wherein the through hole is provided with a concave portion having a predetermined depth from the opening on the other surface. It is characterized by being formed by opening a through hole having a diameter smaller than that of the concave portion while penetrating from the bottom surface of the concave portion to the opening side on the one surface side.
【0016】[0016]
【発明の作用、および発明の効果】請求項1の発明によ
れば、スルーホールにおいて一面側の開口よりも他面側
の開口を大きな径をもって形成し、このスルーホールの
開口に形成される導電性バンプについても、一面側に形
成される第一の導電性バンプよりも他面側に形成される
第二の導電性バンプを大きな径をもって形成する。この
第二の導電性バンプを、基板側バンプとの接続に用いる
ことにより、プレスの際に位置ずれが生じた場合でも、
位置ずれ誤差を吸収して両バンプ間の良好な接続性を確
保することができる。According to the first aspect of the present invention, in the through hole, the opening on the other side is formed with a larger diameter than the opening on the one side, and the conductive hole formed in the opening of the through hole is formed. As for the conductive bump, the second conductive bump formed on the other surface side is formed with a larger diameter than the first conductive bump formed on the one surface side. By using this second conductive bump for connection with the substrate-side bump, even if a misalignment occurs during pressing,
A good connection between the two bumps can be secured by absorbing the displacement error.
【0017】請求項2の発明によれば、前記スルーホー
ルを、前記他面側の開口側からレーザを照射することに
より形成する。このような方法では、スルーホールをテ
ーパ状に形成することができる。このように一面側の開
口よりも他面側の開口に大きな径を備えたスルーホール
を簡便に形成させることができるため、半導体モジュー
ルの製造工程を複雑化させることを回避でき、コストを
抑制することができる。According to the second aspect of the present invention, the through hole is formed by irradiating a laser from the opening on the other surface. In such a method, the through hole can be formed in a tapered shape. As described above, the through hole having a larger diameter can be easily formed in the opening on the other surface side than the opening on the one surface side, so that it is possible to avoid complicating the manufacturing process of the semiconductor module and to suppress the cost. be able to.
【0018】請求項3の発明によれば、前記スルーホー
ルを、前記他面側の開口側から所定の深さの凹部を凹設
し、前記凹部の底面から前記一面側の開口側に貫通する
とともに前記凹部よりも小さな径を備えた貫通孔を開け
ることによって形成する。このような方法では、スルー
ホールを、他面側の開口から所定の深さの内周が全周に
沿って径方向外側に拡大された段付き状に形成すること
ができる。According to the third aspect of the present invention, the through hole is provided with a concave portion having a predetermined depth from the opening side on the other surface side, and penetrates from the bottom surface of the concave portion to the opening side on the one surface side. In addition, it is formed by opening a through hole having a smaller diameter than the concave portion. According to such a method, the through hole can be formed in a stepped shape in which the inner periphery of a predetermined depth from the opening on the other surface is enlarged radially outward along the entire periphery.
【0019】層間部材に導電性バンプを形成する際に
は、あらかじめ層間部材の両面に保護フィルムを貼りつ
けておいてからスルーホールを形成し、導電性ペースト
を充填した後に保護フィルムを剥離することによって、
層間部材の表裏に導電性バンプを突出させる場合があ
る。このような場合において、スルーホールをテーパ状
に形成すれば、両面に貼りつけられた保護フィルムに形
成された孔部もテーパ状に形成される。このため、第一
の導電性バンプにおいては先端に向かって狭まった形の
すり鉢状に形成されて、接続信頼性を損なう可能性があ
る。また、第二の導電性バンプにおいては先端に向かっ
て広がった形のすり鉢状に形成されて、この広がった先
端の縁部がプレスの際などに崩れる可能性がある。しか
し、スルーホールを段付き状に形成すれば、導電性バン
プを略円柱状に形成することが可能であるから、安定し
て接続信頼性を確保することができる。When forming the conductive bumps on the interlayer member, a protective film must be attached to both surfaces of the interlayer member in advance, a through hole is formed, and after the conductive paste is filled, the protective film is peeled off. By
In some cases, conductive bumps protrude from the front and back of the interlayer member. In such a case, if the through holes are formed in a tapered shape, the holes formed in the protective films attached to both surfaces are also formed in a tapered shape. For this reason, the first conductive bump is formed in a mortar shape narrowing toward the tip, which may impair the connection reliability. In addition, the second conductive bump is formed in a mortar shape that expands toward the tip, and the edge of the spread tip may collapse during pressing or the like. However, if the through hole is formed in a stepped shape, the conductive bump can be formed in a substantially columnar shape, so that the connection reliability can be stably secured.
【0020】[0020]
【発明の実施の形態】<第一実施形態>DESCRIPTION OF THE PREFERRED EMBODIMENTS <First Embodiment>
【0021】以下、本発明を具体化した第一実施形態に
ついて、図1〜図5を参照しつつ詳細に説明する。本実
施形態の半導体モジュール1は、半導体チップ3を実装
したプリント基板2と層間部材20と交互に重ね合わ
せ、最下層にI/O配線基板30を重ねて熱プレスする
ことにより一体化された構造となっている(図1参
照)。Hereinafter, a first embodiment of the present invention will be described in detail with reference to FIGS. The semiconductor module 1 of this embodiment has a structure in which the printed board 2 on which the semiconductor chip 3 is mounted and the interlayer member 20 are alternately stacked, and the I / O wiring board 30 is stacked on the lowermost layer and hot-pressed to be integrated. (See FIG. 1).
【0022】まず、半導体チップ3を実装したプリント
基板2の製造方法について説明する。First, a method of manufacturing the printed circuit board 2 on which the semiconductor chip 3 is mounted will be described.
【0023】プリント基板2の出発材料は、片面銅張積
層板4である。この片面銅張積層板4は、例えば板状の
ガラス布エポキシ樹脂により形成される厚さ75μmの
絶縁性基板5の一方の面(図2において上面)に、全面
に厚さ12μmの銅箔6が貼り付けられた周知の構造で
ある。この片面銅張積層板4において、銅箔6とは反対
側の面をポリエチレンテレフタレート(PET)製の保
護フィルム7で保護しておく(図3A)。The starting material of the printed circuit board 2 is a single-sided copper-clad laminate 4. The single-sided copper-clad laminate 4 is provided on one surface (upper surface in FIG. 2) of an insulating substrate 5 having a thickness of 75 μm and formed of, for example, a plate-like glass cloth epoxy resin. Is a well-known structure attached. In the single-sided copper-clad laminate 4, the surface opposite to the copper foil 6 is protected by a protective film 7 made of polyethylene terephthalate (PET) (FIG. 3A).
【0024】この保護フィルム7が施されている面側
(図2において下面側)から、所定の位置に例えばパル
ス発振型炭酸ガスレーザ加工装置によってレーザ照射を
行うことにより、絶縁性基板5を貫通して銅箔6に達す
る内径100μmのビアホール8を形成する(図2
B)。加工条件は、パルスエネルギーが0.5〜10.
0mJ、パルス幅が1〜100μs、パルス間隔が0.
5ms以上、ショット数が3〜50の範囲内であること
が好ましい。次いで、このビアホール8の内部に残留す
る樹脂を取り除くためのデスミア処理を行う。その後、
銅箔6面を保護フィルム7で保護しておき、銅箔6を一
方の電極として電解メッキ法によってビアホール8内に
メッキ導体9を形成させる(図2C)。なお、メッキ導
体9の充填深さは、その上面が保護フィルム7の表面と
面一になる程度が好ましい。By irradiating a laser beam to a predetermined position from the surface on which the protective film 7 is applied (the lower surface side in FIG. 2) using, for example, a pulsed carbon dioxide laser processing device, the insulating film 5 is penetrated. 2 to form a via hole 8 having an inner diameter of 100 μm reaching the copper foil 6.
B). The processing conditions are such that the pulse energy is 0.5 to 10.
0 mJ, a pulse width of 1 to 100 μs, and a pulse interval of 0.
The number of shots is preferably in the range of 3 to 50 for 5 ms or more. Next, a desmear process for removing the resin remaining inside the via hole 8 is performed. afterwards,
The surface of the copper foil 6 is protected by a protective film 7, and a plated conductor 9 is formed in the via hole 8 by electrolytic plating using the copper foil 6 as one electrode (FIG. 2C). The filling depth of the plated conductor 9 is preferably such that the upper surface thereof is flush with the surface of the protective film 7.
【0025】次に、銅箔6側の保護フィルム7を剥離し
た後に、感光性のドライフィルム10を貼りつける。こ
のドライフィルム10を所定のパターンにより露光・現
像処理することにより、孔部11を形成する(図2
D)。この孔部11内に電解メッキを施すことにより、
半導体チップ3を実装するための実装用バンプ12とな
るメッキ層を形成する(図2E)。Next, after the protective film 7 on the copper foil 6 side is peeled off, a photosensitive dry film 10 is attached. The hole 11 is formed by exposing and developing the dry film 10 in a predetermined pattern.
D). By applying electrolytic plating to the inside of the hole 11,
A plating layer serving as a mounting bump 12 for mounting the semiconductor chip 3 is formed (FIG. 2E).
【0026】その後、ドライフィルム10を剥離し、実
装用バンプ12を突出させる。同時に、下面側の保護フ
ィルム7を剥離することで、メッキ導体9の先端部が絶
縁性基板5の表面から突出されて接続用バンプ13(本
発明の基板側バンプに該当する)とされる(図3F)。Thereafter, the dry film 10 is peeled off, and the mounting bumps 12 are projected. At the same time, by peeling off the protective film 7 on the lower surface side, the tip of the plated conductor 9 protrudes from the surface of the insulating substrate 5 and becomes the connection bump 13 (corresponding to the substrate-side bump of the present invention) ( (FIG. 3F).
【0027】次いで、電着法により、上面側全面と下面
側の接続用バンプ13上にフォトレジスト層14を形成
させる(図3G)。次に、上面側のフォトレジスト層1
4を所定の配線回路15のパターンに合わせて露光・現
像処理する。この後、フォトレジスト層14により保護
されていない銅箔6部分をエッチング処理することによ
り、配線回路15を形成させる(図3H)。配線回路1
5の一部は、後述する層間部材20の導電性バンプ25
と接続するための接続用ランド15Aとされている。最
後に、フォトレジスト層14を除去することにより、プ
リント基板2の製造が完了する(図3I)。Next, a photoresist layer 14 is formed on the connection bumps 13 on the entire upper surface and the lower surface by an electrodeposition method (FIG. 3G). Next, the photoresist layer 1 on the upper surface side
4 is exposed and developed according to a predetermined pattern of the wiring circuit 15. Thereafter, the wiring circuit 15 is formed by etching the copper foil 6 that is not protected by the photoresist layer 14 (FIG. 3H). Wiring circuit 1
5 are electrically conductive bumps 25 of the interlayer member 20 described later.
And a connection land 15A for connection to the terminal. Finally, by removing the photoresist layer 14, the manufacture of the printed circuit board 2 is completed (FIG. 3I).
【0028】このプリント基板2上面側の中央部分に
は、半導体チップ3が実装される(図3J)。半導体チ
ップ3は、プリント基板2の中央に接着剤16により固
着され、半導体チップ3の下面側に形成された接続端子
(図示せず)が実装用バンプ12に埋め込まれることに
より、プリント基板2の配線回路15と電気的に接続さ
れる。A semiconductor chip 3 is mounted on a central portion on the upper surface side of the printed board 2 (FIG. 3J). The semiconductor chip 3 is fixed to the center of the printed circuit board 2 with an adhesive 16, and connection terminals (not shown) formed on the lower surface side of the semiconductor chip 3 are embedded in the mounting bumps 12, so that the printed circuit board 2 It is electrically connected to the wiring circuit 15.
【0029】次に、層間部材20の製造方法について説
明する。Next, a method of manufacturing the interlayer member 20 will be described.
【0030】層間部材20の出発材料は、例えばガラス
布基材にエポキシ樹脂を含浸し、加熱半硬化状態として
板状に形成されたプリプレグ21(本発明の絶縁性基材
に該当する)である(図4A)。このプリプレグ21の
厚さは、後述のキャビティ(本発明の開口部に該当す
る)26内に半導体チップ3を収容する必要性から、プ
リント基板2の上面から半導体チップ3の上面までの高
さよりもやや厚く、例えば150μmとされている。ま
た、プリプレグ21は対向するプリント基板2と同じ形
状とされている。The starting material of the interlayer member 20 is, for example, a prepreg 21 (corresponding to the insulating base material of the present invention) formed by impregnating a glass cloth base material with an epoxy resin and forming it in a semi-cured state by heating. (FIG. 4A). The thickness of the prepreg 21 is larger than the height from the upper surface of the printed circuit board 2 to the upper surface of the semiconductor chip 3 due to the necessity of accommodating the semiconductor chip 3 in a cavity 26 (corresponding to an opening of the present invention) described later. It is slightly thick, for example, 150 μm. The prepreg 21 has the same shape as the opposing printed circuit board 2.
【0031】このプリプレグ21の両面をPET製の保
護フィルム22で保護しておき(図4B)、対向するプ
リント基板2の接続用ランド15Aおよび接続用バンプ
13に対応する位置に、プリプレグ21の厚さ方向に貫
通するスルーホール23を形成させる(図4C)。この
スルーホール23はテーパ状に形成されて、例えば図2
において上面側の開口23A(本発明の一面側の開口に
該当する)の内径が100μmとされ、下面側の開口2
3B(本発明の多面側の開口に該当する)の内径はそれ
よりも大きく250μmとされている。このようなテー
パ状のスルーホール23は、例えばパルス発振型炭酸ガ
スレーザ加工装置によって、開口23B側からレーザ照
射を行うことにより、簡便に形成することができる。加
工条件は、パルスエネルギーが0.5〜10mJ、パル
ス幅が1〜100μs、パルス間隔が0.5ms以上、
ショット数が3〜50の範囲内であることが好ましい。Both sides of the prepreg 21 are protected by a protective film 22 made of PET (FIG. 4B), and the thickness of the prepreg 21 is set at a position corresponding to the connection land 15A and the connection bump 13 of the printed board 2 facing each other. A through hole 23 penetrating in the vertical direction is formed (FIG. 4C). This through hole 23 is formed in a tapered shape, for example, as shown in FIG.
, The upper surface side opening 23A (corresponding to the opening on the one surface side of the present invention) has an inner diameter of 100 μm, and the lower surface side opening 2
The inner diameter of 3B (corresponding to the multi-sided opening of the present invention) is 250 μm larger than that. Such a tapered through hole 23 can be easily formed by performing laser irradiation from the opening 23B side by, for example, a pulse oscillation type carbon dioxide laser processing apparatus. The processing conditions are as follows: pulse energy is 0.5 to 10 mJ, pulse width is 1 to 100 μs, pulse interval is 0.5 ms or more,
The number of shots is preferably in the range of 3 to 50.
【0032】次いで、このスルーホール23に導電性ペ
ースト24を充填する(図4D)。充填は、例えばスク
リーン印刷機を使用して導電性ペースト24を保護フィ
ルム22上から印刷することにより行うことができる。
そして、保護フィルム22を剥離すると、導電性ペース
ト24は保護フィルム22の厚さ分だけプリプレグ21
の表面から突出されて導電性バンプ25とされる(図4
E)。このとき、スルーホール23は上面側の開口23
Aよりも下面側の開口23Bの内径が大きいテーパ状と
されているので、下面側に形成される第二の導電性バン
プ25Bは上面側に形成される第一の導電性バンプ25
Aよりも径が大きく形成されている。Next, the conductive paste 24 is filled in the through holes 23 (FIG. 4D). The filling can be performed, for example, by printing the conductive paste 24 on the protective film 22 using a screen printing machine.
Then, when the protective film 22 is peeled off, the conductive paste 24 becomes the prepreg 21 by the thickness of the protective film 22.
4 are formed as conductive bumps 25 by protruding from the surface of FIG.
E). At this time, the through hole 23 is
Since the inner diameter of the opening 23B on the lower surface side is larger than that of A, the second conductive bump 25B formed on the lower surface side is the first conductive bump 25 formed on the upper surface side.
The diameter is larger than A.
【0033】そして、プリプレグ21の中央部分に例え
ばレーザ照射を行うことによりキャビティ26を貫通形
成させて、層間部材20の製造が完了する(図4F)。
キャビティ26の大きさは半導体チップ3の外形寸法よ
りやや大きくされて、その内部に半導体チップ3を収容
可能とされている。Then, for example, laser irradiation is performed on the central portion of the prepreg 21 so as to penetrate the cavity 26 to complete the manufacture of the interlayer member 20 (FIG. 4F).
The size of the cavity 26 is slightly larger than the outer dimensions of the semiconductor chip 3 so that the semiconductor chip 3 can be accommodated therein.
【0034】上記のように製造されたプリント基板2と
層間部材20とを交互に重ね合わせる(図5A)。この
とき、最上層にはプリント基板2が、半導体チップ3を
実装された面が下面側になるように配置され、その下方
には層間部材20が配置される。層間部材20は、その
キャビティ26内にプリント基板2の半導体チップ3を
収容する。そして、その下方にはさらにプリント基板2
および層間部材20が同様に重ね合わせられ、最下層に
はI/O配線基板30が積層される。このI/O配線基
板30は、絶縁性基板33の所定の位置にビアホール3
4が形成され、その上下に所定の配線回路(図示せず)
およびランド31が形成されたものである。The printed board 2 manufactured as described above and the interlayer member 20 are alternately overlapped (FIG. 5A). At this time, the printed board 2 is arranged on the uppermost layer such that the surface on which the semiconductor chip 3 is mounted is on the lower surface side, and the interlayer member 20 is arranged below the printed circuit board 2. The interlayer member 20 accommodates the semiconductor chip 3 of the printed circuit board 2 in the cavity 26 thereof. Then, below the printed circuit board 2
The I / O wiring board 30 is stacked on the lowermost layer. The I / O wiring board 30 is provided with a via hole 3 at a predetermined position on the insulating substrate 33.
4 are formed, and a predetermined wiring circuit (not shown) is formed above and below it.
And lands 31 are formed.
【0035】このとき、層間部材20は、第一の導電性
バンプ25Aがプリント基板2の接続用ランド15A
と、第二の導電性バンプ25Bが接続用バンプ13と接
続されるように重ね合わせられている。At this time, the first conductive bumps 25A of the interlayer member 20 are connected to the connection lands 15A of the printed circuit board 2.
And the second conductive bump 25 </ b> B is overlapped so as to be connected to the connection bump 13.
【0036】次いで、プレスにより加圧加熱を行うと、
プリプレグ21はいったん溶融流動し、時間の経過に伴
って硬化するとともに上下のプリント基板2およびI/
O配線基板30と接着して、半導体モジュール1が形成
される(図5B)。このとき、各プリント基板2の接続
用ランド15A、接続用バンプ13、およびI/O配線
基板30のランド31と、隣接する層間部材20の導電
性バンプ25A、25Bとが接続されており、これによ
り上下のプリント基板2およびI/O配線基板30の配
線回路間が電気的に接続される。また、 I/O配線基
板30の下面側のランド31には、外部基板との接続用
のはんだボール32が形成される。Then, pressurizing and heating by a press,
The prepreg 21 melts and flows once, hardens with the passage of time, and the upper and lower printed circuit boards 2 and the I / O
The semiconductor module 1 is formed by bonding to the O wiring substrate 30 (FIG. 5B). At this time, the connection lands 15A and the connection bumps 13 of each printed circuit board 2 and the lands 31 of the I / O wiring board 30 are connected to the conductive bumps 25A and 25B of the adjacent interlayer member 20. Thus, the wiring circuits of the upper and lower printed boards 2 and the I / O wiring board 30 are electrically connected. Further, solder balls 32 for connection to an external substrate are formed on the lands 31 on the lower surface side of the I / O wiring board 30.
【0037】以上のように本実施形態によれば、層間部
材20において、スルーホール23は上面側の開口23
Aよりも下面側の開口23Bの内径が大きいテーパ状と
されている。このため、下面側に形成される第二の導電
性バンプ25Bが、上面側に形成される第一の導電性バ
ンプ25Aよりも大きな径を備え、第二の導電性バンプ
25Bが、プリント基板2の接続用バンプ13との接続
に用いられる。これにより、積層の際に、プレスにより
位置ずれが生じた場合でも、位置ずれ誤差を吸収して両
バンプ13、25B間の良好な接続性を確保することが
できる。As described above, according to this embodiment, in the interlayer member 20, the through hole 23 is
The opening 23 </ b> B on the lower surface side has a larger inner diameter than A. For this reason, the second conductive bump 25B formed on the lower surface side has a larger diameter than the first conductive bump 25A formed on the upper surface side, and the second conductive bump 25B is Is used for connection with the connection bump 13. Thereby, even when a displacement occurs due to pressing during the lamination, the displacement error can be absorbed and good connectivity between the two bumps 13 and 25B can be secured.
【0038】<第二実施形態><Second Embodiment>
【0039】以下、本発明の第二実施形態について、図
6〜図7を参照しつつ詳細に説明する。本実施形態にお
いても、半導体モジュール40は、半導体チップ3を実
装したプリント基板2と層間部材50と交互に重ね合わ
せ、最下層にI/O配線基板30を重ねて熱プレスする
ことにより一体化された構造となっている。なお、本実
施形態において、第一実施形態と同一の構成には同一の
符号を付して説明を省略する。Hereinafter, a second embodiment of the present invention will be described in detail with reference to FIGS. Also in the present embodiment, the semiconductor module 40 is integrated by alternately stacking the printed board 2 on which the semiconductor chip 3 is mounted and the interlayer member 50, stacking the I / O wiring board 30 on the lowermost layer, and hot pressing. Structure. In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.
【0040】本実施形態において使用される層間部材5
0の出発材料は、例えば板状のガラス布基材エポキシ樹
脂により形成される絶縁性基材51である(図6A)。
この絶縁性基材51の厚さは、後述のキャビティ(本発
明の開口部に該当する)59内に半導体チップ3を収容
する必要性から、プリント基板2の上面から半導体チッ
プ3の上面までの高さよりもやや厚く、例えば130μ
mとされている。また、絶縁性基材51は対向するプリ
ント基板2と同じ形状とされている。The interlayer member 5 used in the present embodiment
The starting material No. 0 is an insulating base material 51 formed of, for example, a plate-like glass cloth base epoxy resin (FIG. 6A).
The thickness of the insulating base material 51 depends on the necessity of accommodating the semiconductor chip 3 in a cavity (corresponding to an opening of the present invention) 59 described later, and thus is from the upper surface of the printed circuit board 2 to the upper surface of the semiconductor chip 3. Slightly thicker than height, eg 130μ
m. The insulating base material 51 has the same shape as the opposing printed circuit board 2.
【0041】この絶縁性基材51の両面に接着層52を
形成させておき、さらにその上面をPET製の保護フィ
ルム53で保護しておく(図6B)。次いで、保護フィ
ルム53の上から、対向するプリント基板2の接続用バ
ンプ13に対応する位置に段付き状のスルーホール54
を形成させる。まず、例えばパルス発振型炭酸ガスレー
ザ加工装置によってレーザ照射を行うことにより、略円
柱状で内径250μmの凹部55を形成させる。加工条
件は、パルスエネルギーが5.0〜15.0mJ、パル
ス幅が1〜50μs、パルス間隔が2ms以上、ショッ
ト数が1〜2の範囲内であることが好ましい。次に、凹
部55の底面から、絶縁性基材51の厚さ方向に貫通す
る略円柱状の貫通孔56を形成させる(図6C)。この
貫通孔56は凹部55と同心で、その径は凹部55より
もやや小さく100μmとされている。貫通孔56の加
工条件は、パルスエネルギーが0.5〜5.0mJ、パ
ルス幅が1〜20μs、パルス間隔が2ms以上、ショ
ット数が3〜10の範囲内であることが好ましい。この
とき、凹部55側の開口54B(本発明の他面側の開口
に該当する)は、貫通孔56側の開口54A(本発明の
一面側の開口に該当する)よりも大きな径を備えて形成
されている。Adhesive layers 52 are formed on both sides of the insulating base material 51, and the upper surface thereof is protected with a protective film 53 made of PET (FIG. 6B). Next, a stepped through-hole 54 is formed at a position corresponding to the connection bump 13 of the opposing printed board 2 from above the protective film 53.
Is formed. First, a concave portion 55 having a substantially columnar shape and an inner diameter of 250 μm is formed by performing laser irradiation with, for example, a pulse oscillation type carbon dioxide laser processing device. The processing conditions are preferably such that the pulse energy is 5.0 to 15.0 mJ, the pulse width is 1 to 50 μs, the pulse interval is 2 ms or more, and the number of shots is 1 to 2. Next, from the bottom surface of the concave portion 55, a substantially cylindrical through hole 56 penetrating in the thickness direction of the insulating base material 51 is formed (FIG. 6C). The through hole 56 is concentric with the concave portion 55 and has a diameter of 100 μm, which is slightly smaller than the concave portion 55. The processing conditions for the through hole 56 are preferably such that the pulse energy is 0.5 to 5.0 mJ, the pulse width is 1 to 20 μs, the pulse interval is 2 ms or more, and the number of shots is 3 to 10. At this time, the opening 54B on the concave portion 55 side (corresponding to the opening on the other surface side of the present invention) has a larger diameter than the opening 54A on the through hole 56 side (corresponding to the opening on the one surface side of the present invention). Is formed.
【0042】次いで、このスルーホール54内部に残留
する樹脂を取り除くデスミア処理を行った後に、導電性
ペースト57を充填する(図6D)。充填は、例えばス
クリーン印刷機を使用して導電性ペースト57を保護フ
ィルム53上から印刷することにより行うことができ
る。そして、保護フィルム53を剥離すると、導電性ペ
ースト57は保護フィルム53の厚さ分だけ接着層52
の表面から突出されて、スルーホール54の開口54
A、54Bと同一の径を備えた略円柱状の導電性バンプ
58A、58Bが形成されている(図6E)。このと
き、凹部55側の開口に形成された第二の導電性バンプ
58Bは、貫通孔56側の開口に形成された第一の導電
性バンプ58Aよりも径が大きく形成されている。Next, after performing a desmear process for removing the resin remaining inside the through hole 54, the conductive paste 57 is filled (FIG. 6D). The filling can be performed, for example, by printing the conductive paste 57 on the protective film 53 using a screen printing machine. Then, when the protective film 53 is peeled off, the conductive paste 57 becomes the adhesive layer 52 by the thickness of the protective film 53.
Of the through hole 54 protruding from the surface of the
A substantially columnar conductive bumps 58A and 58B having the same diameter as A and 54B are formed (FIG. 6E). At this time, the diameter of the second conductive bump 58B formed in the opening on the concave portion 55 side is larger than the diameter of the first conductive bump 58A formed in the opening on the through hole 56 side.
【0043】そして、絶縁性基材51の中央部分に例え
ばレーザ照射を行うことによりキャビティ59を貫通形
成させて、層間部材50の製造が完了する(図6F)。
キャビティ59の大きさは半導体チップ3の外形寸法よ
りやや大きくされて、その内部に半導体チップ3を収容
可能とされている。Then, for example, laser irradiation is performed on the central portion of the insulating base material 51 so as to penetrate the cavity 59 to complete the manufacture of the interlayer member 50 (FIG. 6F).
The size of the cavity 59 is slightly larger than the external dimensions of the semiconductor chip 3 so that the semiconductor chip 3 can be accommodated therein.
【0044】上記のように製造されたプリント基板2と
層間部材50とを交互に重ね合わせる(図7A)。この
とき、最上層にはプリント基板2が、半導体チップ3を
実装された面が下面側になるように配置され、その下方
には層間部材50が配置される。層間部材50は、その
キャビティ59内にプリント基板2の半導体チップ3を
収容し、また、導電性バンプ58がプリント基板2の接
続用ランド15Aおよび接続用バンプ13と接続可能な
ように重ね合わせられる。そして、その下方にはさらに
プリント基板2および層間部材50が同様に重ね合わせ
られ、最下層にはI/O配線基板30が積層される。The printed board 2 manufactured as described above and the interlayer member 50 are alternately overlapped (FIG. 7A). At this time, the printed circuit board 2 is arranged on the uppermost layer such that the surface on which the semiconductor chip 3 is mounted is on the lower surface side, and the interlayer member 50 is arranged below it. The interlayer member 50 accommodates the semiconductor chip 3 of the printed circuit board 2 in its cavity 59, and is overlapped so that the conductive bump 58 can be connected to the connection land 15A and the connection bump 13 of the printed circuit board 2. . Then, the printed board 2 and the interlayer member 50 are further overlapped under the same, and the I / O wiring board 30 is stacked on the lowermost layer.
【0045】このとき、層間部材50は、第一の導電性
バンプ58Aがプリント基板2の接続用ランド15A
と、第二の導電性バンプ58Bが接続用バンプ13と接
続されるように重ね合わせられている。At this time, the first conductive bump 58A is connected to the connection land 15A of the printed circuit board 2 by the interlayer member 50.
And the second conductive bump 58 </ b> B is overlapped so as to be connected to the connection bump 13.
【0046】そして、加熱真空プレスすることによって
接着層52が硬化して上下のプリント基板2およびI/
O配線基板30と接着し、半導体モジュール40が形成
される(図7B)。このとき、層間部材50に形成され
たスルーホール54により、上下のプリント基板2およ
びI/O配線基板30の配線回路間が電気的に接続され
る。このとき、各プリント基板2の接続用ランド15A
およびI/O配線基板30のランド31と、隣接する層
間部材50の導電性バンプ58A、58Bとが接続され
ており、これにより上下のプリント基板2およびI/O
配線基板30の配線回路間が電気的に接続される。ま
た、 I/O配線基板30の下面側のランド31には、
外部基板との接続用のはんだボール32が形成される。Then, the adhesive layer 52 is cured by heating and vacuum pressing, and the upper and lower printed circuit boards 2 and I / O
The semiconductor module 40 is formed by bonding with the O wiring substrate 30 (FIG. 7B). At this time, the upper and lower printed circuit boards 2 and the wiring circuits of the I / O wiring board 30 are electrically connected by the through holes 54 formed in the interlayer member 50. At this time, the connection lands 15A of each printed circuit board 2
And the lands 31 of the I / O wiring board 30 are connected to the conductive bumps 58A and 58B of the adjacent interlayer member 50, whereby the upper and lower printed boards 2 and the I / O
The wiring circuits of the wiring board 30 are electrically connected. The land 31 on the lower surface side of the I / O wiring board 30 has
A solder ball 32 for connection to an external substrate is formed.
【0047】以上のように本実施形態によれば、層間部
材50において、スルーホール54は段付き状とされて
いる。このため、第二の導電性バンプ58Bが第一の導
電性バンプ58Aよりも大きな径をもって形成され、こ
の第二の導電性バンプ58Bがプリント基板2の接続用
バンプ13と接続される。これにより、積層の際に、プ
レスにより位置ずれが生じた場合でも、位置ずれ誤差を
吸収して両バンプ13、58B間の良好な接続性を確保
することができる。また、導電性バンプ58A、58B
をスルーホール54の開口54A、54Bと同一の径を
備えた略円柱状に形成することができるため、安定して
接続信頼性を確保することができる。As described above, according to the present embodiment, in the interlayer member 50, the through holes 54 are stepped. Therefore, the second conductive bump 58B is formed to have a larger diameter than the first conductive bump 58A, and the second conductive bump 58B is connected to the connection bump 13 of the printed circuit board 2. Thereby, even when a displacement occurs due to pressing during the lamination, the displacement error can be absorbed and the good connection between the two bumps 13 and 58B can be secured. Also, the conductive bumps 58A, 58B
Can be formed in a substantially columnar shape having the same diameter as the openings 54A and 54B of the through hole 54, so that the connection reliability can be secured stably.
【0048】なお、本発明の技術的範囲は、上記した実
施形態によって限定されるものではなく、例えば、次に
記載するようなものも本発明の技術的範囲に含まれる。
その他、本発明の技術的範囲は、均等の範囲にまで及ぶ
ものである。 (1)第一実施形態においては、スルーホール23はテ
ーパ状に形成されているが、本発明によればスルーホー
ルの形状は上記実施形態の限りではなく、例えば段付き
状であってもよい。 (2)第二実施形態においては、スルーホール54は段
付き状に形成されているが、本発明によればスルーホー
ルの形状は上記実施形態の限りではなく、例えばテーパ
状であってもよい。 (3)上記各実施形態によれば、I/O配線基板30は
ランド31により層間部材20、50の導電性バンプ2
5B、58Bと電気的に接続されているが、本発明によ
ればI/O配線基板の層間部材との電気的な接続は上記
実施形態の限りではなく、例えばバンプにより行われて
いてもよい。 (4)上記各実施形態では、キャビティ26、59は導
電性バンプ25、58の形成後に形成されているが、本
発明によればキャビティの形成は上記実施形態の限りで
はなく、例えばスルーホールの形成と同時に行ってもよ
い。また、スルーホールの形成前に行ってもよい。Note that the technical scope of the present invention is not limited by the above-described embodiment, and for example, those described below are also included in the technical scope of the present invention.
In addition, the technical scope of the present invention extends to an equivalent range. (1) In the first embodiment, the through hole 23 is formed in a tapered shape. However, according to the present invention, the shape of the through hole is not limited to the above embodiment, and may be, for example, a stepped shape. . (2) In the second embodiment, the through hole 54 is formed in a stepped shape. However, according to the present invention, the shape of the through hole is not limited to the above embodiment, and may be, for example, a tapered shape. . (3) According to each of the above embodiments, the I / O wiring board 30 is formed by the lands 31 on the conductive bumps 2 of the interlayer members 20 and 50.
Although they are electrically connected to 5B and 58B, according to the present invention, the electrical connection with the interlayer member of the I / O wiring board is not limited to the above embodiment, and may be made by, for example, a bump. . (4) In each of the above embodiments, the cavities 26 and 59 are formed after the formation of the conductive bumps 25 and 58. However, according to the present invention, the formation of the cavities is not limited to the above embodiment. It may be performed simultaneously with the formation. Also, it may be performed before the formation of the through hole.
【図1】第一実施形態におけるプリント基板と層間部材
とを積層させて多層プリント配線板を製造する前の様子
を示す斜視図FIG. 1 is a perspective view showing a state before manufacturing a multilayer printed wiring board by laminating a printed circuit board and an interlayer member according to a first embodiment.
【図2】プリント基板の製造方法を示す断面図−1FIG. 2 is a sectional view showing a method for manufacturing a printed circuit board-1.
【図3】プリント基板の製造方法を示す断面図−2FIG. 3 is a cross-sectional view illustrating a method of manufacturing a printed circuit board.
【図4】第一実施形態の層間部材の製造方法を示す断面
図FIG. 4 is a cross-sectional view illustrating a method of manufacturing the interlayer member according to the first embodiment.
【図5】第一実施形態におけるプリント基板と層間部材
とを積層させて半導体モジュールを形成した断面図FIG. 5 is a cross-sectional view illustrating a semiconductor module formed by stacking a printed circuit board and an interlayer member according to the first embodiment.
【図6】第二実施形態の層間部材の製造方法を示す断面
図FIG. 6 is a sectional view showing a method of manufacturing an interlayer member according to a second embodiment.
【図7】第二実施形態におけるプリント基板と層間部材
とを積層させて半導体モジュールを形成した断面図FIG. 7 is a cross-sectional view illustrating a semiconductor module formed by laminating a printed circuit board and an interlayer member according to the second embodiment.
【図8】従来におけるICパッケージの側断面図FIG. 8 is a side sectional view of a conventional IC package.
【図9】(a)従来におけるICパッケージを実装した
基板の側面図 (b)従来におけるICパッケージを実装した基板の平
面図9A is a side view of a substrate on which a conventional IC package is mounted. FIG. 9B is a plan view of a substrate on which a conventional IC package is mounted.
1、40…半導体モジュール 2…プリント基板 3…半導体チップ 13…接続用バンプ(基板側バンプ) 15…配線回路 20、50…層間部材 21…プリプレグ(絶縁性基材) 23、54…スルーホール 23A、54A…開口(一面側の開口) 23B、54B…開口(他面側の開口) 24、57…導電性ペースト 25A、58A、…第一の導電性バンプ 25B、58B…第二の導電性バンプ 26、59…キャビティ(開口部) 51…絶縁性基材 55…凹部 56…貫通孔 DESCRIPTION OF SYMBOLS 1, 40 ... Semiconductor module 2 ... Printed circuit board 3 ... Semiconductor chip 13 ... Connection bump (substrate side bump) 15 ... Wiring circuit 20, 50 ... Interlayer member 21 ... Prepreg (insulating base material) 23, 54 ... Through hole 23A , 54A ... opening (opening on one side) 23B, 54B ... opening (opening on the other side) 24, 57 ... conductive paste 25A, 58A ... first conductive bump 25B, 58B ... second conductive bump 26, 59: cavity (opening) 51: insulating base material 55: recess 56: through hole
Claims (3)
導体チップを実装するとともに他面側に前記配線回路と
接続された基板側バンプを突設させた複数枚のプリント
基板を、前記配線回路および基板側バンプに接続可能な
導電性バンプと前記半導体チップを収容可能な開口部と
を備えた層間部材を介して積層する半導体モジュールの
製造方法であって、 (a)前記層間部材となる絶縁性基材の厚さ方向に貫通す
るとともに一面側の開口よりも他面側の開口が大きな径
を備えたスルーホールを形成する工程 (b)前記スルーホールに導電性ペーストを充填すること
により、前記一面側の開口に第一の導電性バンプを形成
するとともに、前記他面側の開口に前記第一の導電性バ
ンプよりも大きな径を備えた第二の導電性バンプを形成
する工程 (c)前記絶縁性基材に前記開口部を形成する工程 (d)前記第一の導電性バンプが前記配線回路と接続し、
前記第二の導電性バンプが前記基板側パンプと接続する
ように前記プリント基板と前記層間部材とを交互に積層
する工程を経ることを特徴とする半導体モジュールの製
造方法。A printed circuit board having a predetermined wiring circuit formed on one surface side and a semiconductor chip mounted thereon and a substrate-side bump connected to the wiring circuit protruding on the other surface side, the wiring board being connected to the wiring board. A method for manufacturing a semiconductor module, comprising laminating via an interlayer member having a conductive bump connectable to a circuit and a substrate-side bump and an opening capable of accommodating the semiconductor chip, wherein (a) the interlayer member is provided. A step of forming a through-hole having a larger diameter than the opening on one side and penetrating in the thickness direction of the insulating base material, and (b) filling the through-hole with a conductive paste. Forming a first conductive bump in the opening on the one surface side and forming a second conductive bump having a larger diameter than the first conductive bump in the opening on the other surface side ( c) the insulation Forming the opening in the conductive base material (d) the first conductive bump is connected to the wiring circuit,
A method for manufacturing a semiconductor module, comprising a step of alternately stacking the printed circuit board and the interlayer member so that the second conductive bump is connected to the substrate-side pump.
側からレーザを照射することにより形成することを特徴
とする請求項1に記載の半導体モジュールの製造方法。2. The method for manufacturing a semiconductor module according to claim 1, wherein the through hole is formed by irradiating a laser from the opening on the other surface.
側から所定の深さの凹部を凹設し、前記凹部の底面から
前記一面側の開口側に貫通するとともに前記凹部よりも
小さな径を備えた貫通孔を開けることによって形成する
ことを特徴とする請求項1に記載の半導体モジュールの
製造方法。3. A recess having a predetermined depth in the through hole from the opening on the other surface, penetrating from the bottom surface of the recess to the opening on the one surface, and having a smaller diameter than the recess. The method for manufacturing a semiconductor module according to claim 1, wherein the semiconductor module is formed by forming a through hole provided with:
Priority Applications (2)
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TW91102404A TW543083B (en) | 2000-08-10 | 2002-02-08 | Method for manufacturing semiconductor module |
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JP2000248592A JP4562881B2 (en) | 2000-08-18 | 2000-08-18 | Manufacturing method of semiconductor module |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007173606A (en) * | 2005-12-22 | 2007-07-05 | Renesas Technology Corp | Electronic device and its manufacturing method |
JP2010041045A (en) * | 2008-07-09 | 2010-02-18 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for producing the same |
US8692135B2 (en) | 2008-08-27 | 2014-04-08 | Nec Corporation | Wiring board capable of containing functional element and method for manufacturing same |
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JPH0559873U (en) * | 1992-01-14 | 1993-08-06 | 株式会社村田製作所 | 3D circuit board |
JPH0917828A (en) * | 1995-04-28 | 1997-01-17 | Asahi Denka Kenkyusho:Kk | Circuit board |
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JPH0559873U (en) * | 1992-01-14 | 1993-08-06 | 株式会社村田製作所 | 3D circuit board |
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JP2010041045A (en) * | 2008-07-09 | 2010-02-18 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for producing the same |
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US8692135B2 (en) | 2008-08-27 | 2014-04-08 | Nec Corporation | Wiring board capable of containing functional element and method for manufacturing same |
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