JP2002043289A5 - - Google Patents

Claims (6)

Plasma is generated by introducing electromagnetic waves into the vacuum vessel through a dielectric plate by applying a high frequency voltage to the coil or antenna while supplying gas into the vacuum vessel and exhausting it while controlling it to a predetermined pressure. A plasma processing method for processing a substrate, wherein a gas is introduced into a vacuum container through each of a plurality of dielectric plates constituting an electromagnetic wave introduction surface .   Plasma is generated by introducing electromagnetic waves into the vacuum vessel through a dielectric plate by applying a high frequency voltage to the coil or antenna while supplying gas into the vacuum vessel and evacuating it while controlling it to a predetermined pressure. In the plasma processing method for processing a substrate, a second dielectric plate is disposed between the dielectric plate and the substrate separately from the dielectric plate, and a space between the dielectric plate and the second dielectric plate is defined as an exhaust passage in the dielectric plate. A plasma processing method, characterized by exhausting through the air. A vacuum vessel, a gas supply means for supplying process gas into the vacuum vessel, a coil or antenna for introducing electromagnetic waves into the vacuum vessel via a dielectric plate provided on the wall of the vacuum vessel, and a high-frequency voltage to the coil or antenna In the plasma processing apparatus having a high frequency power source for applying a voltage and an electrode for mounting a substrate in a vacuum vessel, a gas supply means is disposed inside each of a plurality of dielectric plates constituting the electromagnetic wave introduction surface. A plasma processing apparatus.   A vacuum vessel, a gas supply means for supplying a process gas into the vacuum vessel, a coil or antenna for introducing electromagnetic waves into the vacuum vessel via a dielectric plate provided on the wall of the vacuum vessel, and a high-frequency voltage to the coil or antenna In a plasma processing apparatus having a high frequency power source for applying a voltage and an electrode for mounting a substrate in a vacuum vessel, a second dielectric plate is disposed between the dielectric plate and the substrate separately from the dielectric plate, and the dielectric plate A plasma processing apparatus, wherein an exhaust passage for exhausting a space is disposed in the dielectric plate between the first dielectric plate and the second dielectric plate. The plasma processing apparatus according to claim 3 or 4, wherein a material of the dielectric plate is glass, ceramic, or polyimide resin. The plasma processing apparatus according to claim 4, wherein a material of the second dielectric plate is glass, ceramic, or polyimide resin.