JP2001201470A - X-ray photoelectron analyzer - Google Patents

Abstract

(57) [Summary] [Problem] To analyze a sample in the depth direction instantaneously and nondestructively.
Further, the analysis in the depth direction is performed in a state where the sample is fixed without the need to replace the X-ray source by one X-ray source. SOLUTION: An X-ray irradiating means 2 for simultaneously irradiating a plurality of monochromatic X-rays having energy intervals, a detecting means 8 for detecting a correlation amount relating to energy of photoelectrons generated from a sample, and irradiating a plurality of monochromatic X-rays And an analyzing means 10 for analyzing the energy spectrum of the photoelectrons according to the above. The analyzing means 10 analyzes in the depth direction from one photoelectron energy spectrum. In the analysis in the depth direction, the depth from the sample surface can be specified by the photoelectron energy value of the photoelectron energy spectrum, and the resolution in the depth direction is determined by the energy interval between monochromatic X-rays.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention
The present invention relates to a surface analyzer for performing dimensional analysis, and particularly to an X-ray photoelectron analyzer.

[0002]

2. Description of the Related Art In the fields of semiconductors, materials, thin films, precision processing, etc., an X-ray analyzer is known as an apparatus for analyzing the composition of a thin film or the surface deterioration of a polished surface. 2. Description of the Related Art In an X-ray analyzer, X-ray photoelectron spectroscopy is known which detects kinetic energy of photoelectrons generated when a sample is irradiated with X-rays, and identifies an irradiation element from the detection result. Conventional X
In an X-ray photoelectron spectrometer that performs X-ray photoelectron spectroscopy, since the sample is irradiated with monochromatic X-rays obtained by electron beam excitation, the depth of the measurement target area of the sample is constant, so that two-dimensional The analysis was limited to only the simple state analysis, and the analysis in the depth direction of the sample was difficult. Therefore, when a plurality of thin films are formed in the vicinity of the surface, layer information in the depth direction from the outermost surface cannot be obtained, so that it has been difficult to perform high-precision analysis of high-density elements and the like.

[0003] Conventionally, in order to obtain information in the depth direction, the spectrum of photoelectrons is measured while changing the incident angle of monochromatic X-rays on a sample or shaving the sample surface by ion sputtering. Further, there is also known an analysis method in which a plurality of X-ray sources are prepared, irradiation is sequentially performed with a time shift by exchanging the X-ray sources, and the measurement using monochromatic X-rays having different wavelengths is repeated a plurality of times.

[0004]

In the case of performing analysis in the depth direction by changing the angle of incidence of monochromatic X-rays on a sample, it is necessary to move the sample, thereby increasing the analysis time. In the case of shaving the sample surface by ion sputtering, there is a problem that the sample surface is destroyed. In addition, when the irradiation of a plurality of monochromatic X-rays is performed by replacing the X-ray source, there is a problem that a plurality of X-ray sources are required, and the operation of replacing the X-ray source requires a long time. When the state changes every moment, there is a problem that accurate analysis is difficult.

Accordingly, the present invention has been made to solve the above-mentioned conventional problems, and has as its object to instantaneously and nondestructively analyze a sample in the depth direction, and to replace an X-ray source with one X-ray source. It is an object of the present invention to perform a depth direction analysis without fixing a sample.

[0006]

SUMMARY OF THE INVENTION The present invention provides a method for producing a plurality of monochromatic Xs.
Simultaneously irradiating the sample with rays to generate photoelectrons with various energies from different depth regions of the sample, and analyze the sample in the depth direction from the energy spectrum of the photoelectrons obtained by simultaneously acquiring these photoelectrons Utilizing that there is a correspondence between the photoelectron generation depth and the photoelectron energy value, the depth from the sample surface is specified by the photoelectron energy value of the photoelectron energy spectrum, and the depth direction analysis is performed instantaneously. The method is performed non-destructively without replacing the X-ray source. Therefore, the present invention provides an X-ray irradiating unit that simultaneously irradiates a plurality of monochromatic X-rays having an appropriate energy interval and an energy range, a detecting unit that detects a correlation amount related to photoelectron energy generated from a sample, Analyzing means for analyzing an energy spectrum of photoelectrons by irradiation of monochromatic X-rays; The analysis means is 1
Analysis in the depth direction from two photoelectron energy spectra. In the analysis in the depth direction, the depth from the sample surface can be specified by the photoelectron energy value of the photoelectron energy spectrum, and the resolution in the depth direction is determined by the energy interval between monochromatic X-rays.

FIG. 1 is a view for explaining the depth direction analysis by the X-ray photoelectron analyzer of the present invention. In FIG. 1, X-rays emitted from an X-ray irradiator are a plurality of monochromatic X-rays having energy intervals, and irradiate the sample at the same time. In FIG. 1, the wavelengths λ1 to λ4 (λ1>λ2> λ3
> Λ4) in the case of four-color monochromatic X-rays. By the irradiation of the monochromatic X-rays, photoelectrons having photoelectron energy values corresponding to the monochromatic X-rays are emitted from the sample, and the energy distribution can be measured by a photoelectron energy spectrum.

Generally, when a substance is irradiated with X-rays, photoelectrons having an energy reflecting the element and its chemical state are generated, and the photoelectron energy E is represented by the following equation (1). E = hν−E ₀ −φ (1) where hν is X-ray energy, E ₀ is electron binding energy, and φ is a known work function unique to the X-ray photoelectron analyzer. Since there is a relationship of C = λ · ν between the wavelengths λ and ν of the incident X-rays, the material binding energy is obtained from the wavelength λ of the incident X-rays and the energy E of the detected photoelectrons, thereby obtaining a substance. Can be determined from the composition of the elements constituting and the chemical state of each element.

The escape depth of photoelectrons varies depending on the energy of photoelectrons as shown in FIG. Further, since the energy of the photoelectrons depends on the X-ray energy hν as shown in the equation (1), the escape depth of the photoelectrons can be changed by changing the wavelength of the X-rays. The depth direction of the target area can be changed. Fig. 2 shows the relationship between photoelectron energy and escape depth.
, For example, X-ray wavelength λ1,
By irradiating λ2 and λ3, as shown in FIG.
Photoelectrons from elements existing in the range from the surface to the depths t1, t2, and t3, respectively, are detected.

[0010] The plurality of monochromatic X-rays irradiated by the X-ray irradiating means have energy intervals, and photoelectrons having an energy value corresponding to the energy of each monochromatic X-ray are emitted from the sample. The analysis means analyzes the energy spectrum of the photoelectrons, and obtains the element distribution in the depth direction from the energy value separated according to the energy interval of the monochromatic X-ray as shown in FIG. The resolution Δd in the depth direction depends on the energy difference ΔE that can be separated in the photoelectron energy spectrum, and this energy difference ΔE depends on the energy interval (wavelength interval Δλ) between adjacent monochromatic X-rays. Therefore, in order to obtain a predetermined resolution in the depth direction, the monochrome X
The wavelength interval of the line is set so as to correspond to the resolution.

As the X-ray irradiating means, an arbitrary X-ray light source such as an electron beam excited X-ray or a laser plasma X-ray can be used, and forms a spectrum having a plurality of discrete monochromatic lines. The time waveform of X-ray irradiation can be either a pulse mode or a continuous mode. In the irradiation means, a composite material including a substance containing a plurality of elements can be used as a target. The energy analysis of the photoelectrons by the analysis means can be performed by an energy analyzer. As a pulsed energy analyzer, a time-of-flight (T
OF) can be used. Further, according to the energy analyzer of the electrostatic hemisphere type, it is possible to cope with both the continuous X-ray mode and the pulse X-ray mode. In addition, according to the pulse-type energy analyzer, it can be applied to instantaneous analysis by X-ray single pulse irradiation.

In one analysis mode of the depth direction analysis by the X-ray photoelectron analyzer of the present invention, the relationship between the intensity ratio of the photoelectron energy of the target element and the reference element and the distribution (thickness) in the depth direction of the sample is determined. The photoelectron energy intensity ratio of the target element and the reference element is obtained from the photoelectron energy spectrum obtained for the sample to be measured in advance, and the distribution in the depth direction is obtained from the intensity ratio using the obtained relationship as a calibration curve.

In another form of analysis in the depth direction by the X-ray analyzer of the present invention, the intensity ratio of the photoelectron energy of the target element and the reference element is compared in the depth direction to obtain the target element in the depth direction. Determine the degree of condensation.
In the above two analysis modes, the reference element can be any element contained in the sample, and can be an element different from the target element or the same element having a different chemical state.

In another analysis mode of the depth direction analysis by the X-ray photoelectron analyzer of the present invention, two analysis data are obtained at the same depth from a relationship between a photoelectron energy value and an obtained depth region. Measurement accuracy can be improved. Further, the X-ray photoelectron analyzer of the present invention provides
The point analysis in the depth direction can be performed by fixing the line to the sample, and the point analysis in the depth direction can be performed by moving the X-ray or the sample in one direction. A two-dimensional analysis in the depth direction, that is, a three-dimensional analysis can be performed by moving a line or a sample in a plane.

The X-ray photoelectron analyzer of the present invention can acquire the data of the photoelectron energy spectrum by one X-ray irradiation, so that the analysis in the depth direction of the sample can be instantaneously and non-destructively, and one X-ray can be obtained. The X-ray source can be performed in a short time without requiring replacement of the X-ray source. Further, the analysis in the depth direction can be performed without changing the angle of the incident X-ray with respect to the sample, and the analysis can be performed in a short time.

[0016]

Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 3 is a diagram illustrating a schematic configuration of the X-ray photoelectron analyzer of the present invention. The X-ray photoelectron analyzer 1 of the present invention includes an X-ray irradiator 2, a filter 3 for removing unnecessary wavelength components from an X-ray beam 5 radiated from the X-ray irradiator 2, and a X-ray beam A scanning means 4 for scanning on the surface 6, a detecting means 8 for detecting a correlation amount relating to energy of photoelectrons 7 emitted from the sample, an analyzing means 10 for analyzing an energy spectrum of the photoelectrons, a control means 11, an input means 12 and X
Source 2, scanning means 4, filter 3, sample stage 6,
The detecting means 8 is housed in a vacuum chamber 9.

The X-ray irradiating means 2 simultaneously irradiates a plurality of discrete monochromatic X-rays having a predetermined energy interval, and uses an arbitrary X-ray light source such as an electron beam excited X-ray or a laser plasma X-ray. And the irradiation time waveform of the X-ray in either the pulse mode or the continuous mode can be obtained. In the irradiation means by laser plasma X-rays, for example, a composite material having a substance containing a plurality of elements as a target, for example, containing C, B, and N elements can be used. In the case of laser plasma X-ray, B
When N is used, X-rays in a wide wavelength range of about 2 nm to 7 nm can be obtained. From this X-ray source, continuous X-rays other than bright lines can be almost neglected, resulting in an X-ray spectrum of only bright lines at 2.48 nm (500.4 e).
V), 2.88 nm (430.7 eV), 4.20 nm
(295.2 eV) 4.90 nm (250.1 eV),
4.20 nm (295.2 eV), 6.04 nm (20
(5.6 eV) monochromatic X-rays (bright lines) can be obtained.
When C is used as the target, 2.84
nm (435.6 eV), 3.37 nm (354.6 eV).
V) A monochromatic X-ray (bright line) of 4.03 nm (307.91 eV) is obtained. In the case of electronically excited X-rays, when BO + C is used as a target, 2.38 nm
(523 eV), 4.48 nm (277 eV), 6.7
A monochromatic X-ray (bright line) of 8 nm (183 eV) is obtained.

In the case of laser plasma X-rays, ultraviolet light and visible light are simultaneously generated in addition to soft X-rays. This unnecessary light component is removed using a filter. As the filter, for example, a Ti filter or a C filter can be used. The control unit 11 performs various control processes such as X-ray irradiation control on the X-ray source 2 and the scanning unit 4, photoelectron energy detection control on the detection unit 8, signal processing control on the analysis unit 10, and X-ray photoelectron analysis. Controls the entire device. Scanning means 4 scans X-rays 5 in the x direction and y
In this case, two-dimensional scanning is performed on the sample surface by moving in the direction, or two-dimensional mechanical scanning of the sample is performed. The input unit 12 sets conditions such as analysis conditions and analysis conditions for the control unit 11 and the analysis unit 10 and inputs an operation command.

The analyzing means 10 performs signal processing on the detection signal detected by the detecting means 8 and performs arithmetic processing such as formation of a photoelectron energy spectrum and calculation of data in the depth direction using the photoelectron energy spectrum. Yes, it has functions such as an arithmetic means 10a, a storage means 10b, and an output means 10c. Each function can be implemented by software or hardware.

Next, an embodiment in which analysis in the depth direction is performed by the X-ray photoelectron analyzer of the present invention will be described. First, an aspect of the first depth direction analysis will be described with reference to FIGS. FIG. 4 is a flowchart of the first analysis mode, and FIG. 5 is a schematic distribution diagram, a photoelectron energy spectrum diagram, and a calibration curve diagram in the depth direction of the first analysis mode. 6, 7, and 8 are a flowchart for obtaining a calibration curve, a schematic distribution diagram, a photoelectron energy spectrum diagram, a calibration diagram in the depth direction, and an example of a calibration curve of silicon oxide.
FIG. 9 is a schematic distribution diagram and a photoelectron energy spectrum diagram illustrating an application example to a three-layer sample.

In the first analysis mode of the depth direction analysis, the photoelectron energy intensity ratio of the target element and the reference element is obtained from the photoelectron energy spectrum obtained for the sample to be measured, and the depth ratio is obtained from the calibration curve by using this intensity ratio. Find the distribution of directions. Therefore, first, the relationship between the intensity ratio of photoelectron energy and the distribution (thickness) in the depth direction of the sample for the target element and the reference element is determined in advance as a calibration curve.
Here, the calibration curve is a diagram of a group of curves for obtaining the thickness of the target element from the sample surface, and each curve represents the intensity ratio to the photoelectron energy for each element thickness. The procedure for obtaining the calibration curve will be described later with reference to FIGS. 6 to 8 (step S1).

From the X-ray irradiation means of the X-ray photoelectron analyzer,
A plurality of monochromatic X-rays having discrete energy are irradiated simultaneously. As shown in FIG. 5A, silicon oxide (SiO ₂ ) is formed on the surface of metal silicon Si, and a plurality of discrete monochromatic Xs are formed on a sample in which the thickness of the SiO ₂ is d1, d2, and d3, respectively. Lines (λ1 (in the figure), λ2 (in the figure), λ3 (in the figure), and λ4 (in the figure) are irradiated (step S2), data is acquired by the detection means (step S3), and analysis is performed. 5 (b) schematically shows a photoelectron energy spectrum, which has an energy E determined by equation (1) according to the wavelength of each discrete monochromatic X-ray. peak waveform is formed at a position of the photoelectron energy. for example, focusing on the photoelectron energy corresponding to the trajectory of the Si2p, the photoelectrons energy positions corresponding to the monochromatic X-ray (,,,), S in SiO ₂ Peaks corresponding to the trajectory of Si2p in peak and Si corresponds to the trajectory of the 2p appear discretely (step S4).

When the element to be measured is SiO ₂ and the reference element is Si, the distribution of SiO _{2 in} the depth direction is represented by a peak corresponding to the orbit of Si ₂ p in Si and SiO _2.
Intensity ratio to the peak corresponding to the orbit of Si2p in
₂ ) / Intensity of Si2p in Si). Therefore, the intensity ratio is determined from the photoelectron energy spectrum of the sample (step S5). Previously, the thickness of SiO ₂ is the thin film of the known (d1, d2, d3), (S in strength / Si of Si2p in SiO ₂
i2p intensity) is calculated, and the calibration curve of FIG. The intensity ratio was applied to this calibration curve from the photoelectron energy spectrum of the sample obtained in step S5,
The thickness is obtained by interpolating the thickness from the adjacent calibration curve. FIG. 5 (c)
In the case of (1), the thickness of the sample SiO _{2 is} a thickness interpolated between d2 and d3. (Step S6).

Next, an example of a procedure for obtaining a calibration curve will be described with reference to FIGS. First, a plurality of samples having known depth distributions are prepared. FIG. 7A-1 shows a sample example in which silicon oxide (SiO ₂ ) is formed on the surface of metallic silicon Si, and the thickness of the SiO ₂ is d1 and d2, respectively (step S11). One of the prepared samples
Are set on the X-ray photoelectron analyzer (step S1).
2) Simultaneously irradiate a plurality of discrete monochromatic X-rays from the X-ray irradiating means. In FIG. 7 (a-1), each single color X of the arrow
The line indicates the reaching depth, and the hatched portion indicates a region in the depth direction where photoelectrons are emitted by the monochromatic X-ray. (Step S13).

Data is obtained by detecting photoelectrons emitted from the sample by simultaneous irradiation of a plurality of monochromatic X-rays (step S1).
4) Obtain a photoelectron energy spectrum by data analysis. By simultaneously irradiating a plurality of monochromatic X-rays of different wavelengths, a photoelectron energy spectrum including distributions of different depths can be detected simultaneously. FIG.
(B-1) the thickness of the SiO ₂ indicates a photoelectron energy spectrum obtained from a sample of d1 (step S
15).

[0026] For this photoelectron energy spectrum, a peak corresponding to the trajectory of Si2p in Si and SiO ₂
Intensity ratio to the peak corresponding to the orbit of Si2p in
(Intensity of Si2p in ₂ / intensity of Si2p in Si) is obtained for each photoelectron energy corresponding to each monochromatic X-ray (step S16), and an intensity ratio curve is obtained by the least square method or the like. In the intensity ratio curve shown in FIG. 7 (c-1), a portion where the photoelectron energy is small (for example, E1, E
2) shows a distribution of SiO ₂ in the vicinity of the surface, SiO ₂
Is large, the intensity ratio is large. In addition, a portion where the photoelectron energy is large (for example, E3, E
4) shows the distribution of SiO _{2 at} a position deep from the surface,
Since the existence ratio of SiO ₂ is small, the intensity ratio has a small value (step S17).

Similarly, steps S12 to S17 are repeated for samples having different SiO ₂ thicknesses. Figure 7 (a-2), ( b-2), shows the case of (c-2) the thickness of the SiO ₂ is d2, the intensity ratio curve shown in FIG. 7 (c-2), SiO 2 7 Since the distribution is deeper than in the case of (c-1), a large intensity ratio is obtained. The calibration curve shown in FIG. 5C can be obtained by obtaining the same intensity ratio curve for all the samples whose depth distribution is known (step S18). FIG. 8 shows that the thickness of SiO ₂ is 1 nm, 2 nm, and 5 nm.
Is a calibration curve obtained by a simulation example in which the intensity ratio between SiO ₂ and Si (vertical axis) is shown as a function of the photoelectron energy of Si 2p (horizontal axis). That is, it can be obtained by simulation.

The first analysis mode of the above-described depth direction analysis shows an example of a film thickness analysis (depth direction analysis) of a two-layer structure, but the X-ray photoelectron analyzer of the present invention has a two-layer structure. However, the present invention can be applied to a multilayer structure such as a three-layer structure and a four-layer structure. FIG. 9 shows an example of application to a multilayer structure. 9 of SiO ₂ , Si ₃ N ₄ and Si as shown in FIG.
When a monochromatic X-ray having a wavelength reaching the depth of each layer is irradiated on the thin film having the layer structure, a photoelectron energy spectrum as shown in FIG. 9B can be obtained. The distribution state of the photoelectron energy spectrum from the lower energy to the depth closer to the surface is shown. For example, in the portion having the lowest energy (portion E1), Si2p by SiO ₂ is used.
Is remarkable, and in the middle energy portion (portion E2), the spectrum intensity due to Si ₃ N ₄ is remarkable, and the portion having the highest energy (portion E3) is obtained.
In this case, the spectrum intensity of Si2p by Si becomes remarkable.

Next, a second analysis mode of the depth direction analysis will be described with reference to FIGS. FIG. 10 is a flowchart for explaining a second analysis mode of the depth direction analysis, and FIG. 11 is a schematic distribution diagram in the depth direction.
2 is an example of a photoelectron energy spectrum according to the distribution state in the depth direction, and FIG. 13 is a schematic diagram illustrating an analysis comparison according to the second analysis mode.

In a second analysis mode, the degree of condensation of the target element in the depth direction is obtained by comparing the intensity ratio of the photoelectron energy of the target element and the reference element in the depth direction. In the second analysis mode, a plurality of discrete single colors X
A line is irradiated (Step S21), data is acquired by the detecting means (Step S22), and a photoelectron energy spectrum is obtained by the analyzing means (Step S23). In the photoelectron energy spectrum, in the photoelectron energy distribution arranged in order in the depth direction, the ratio of the spectral intensity of the target element and the reference element is obtained (step S24), and the intensity ratio is compared in the order of photoelectron energy to obtain the depth. The degree of condensation of the target element in the vertical direction is determined (step S
25).

When a sample of NaY zeolite (NaAlSiO) is uniformly distributed in the depth direction (FIG. 11)
FIG. 12 (a)) and a case where Al is condensed on the surface in the state of Al ₂ O ₃ (shown in FIG. 11 (b)).
Shown in FIG. 12A is a photoelectron energy spectrum in the case of uniform distribution in the depth direction, and FIG.
Is a photoelectron energy spectrum when Al is condensed on the surface in the state of Al ₂ O ₃ . In both photoelectron energy spectra, when the element to be measured is Al and the reference element is Si, the intensity ratio (Al2p / Si2p) between the spectral intensity of Al2p and the spectral intensity of Si2p is obtained. The intensity ratio becomes about 0.3 (from 0.314 to 0.288), and Al changes to Al ₂ O ₃
When it condenses on the surface in the state described above, the intensity ratio gradually decreases from 0.913 to 0.252 in the depth direction from the surface.

Incidentally, the photoelectron energy spectrum shown in FIG. 12 is obtained at 2.48 nm (500.4 nm) obtained by laser plasma X-rays using BN as the X-ray source as a target.
eV), 2.88 nm (430.7 eV), 4.20 n
m (295.2 eV), 4.90 nm (250.1 e
V), a case using 6.04 nm (205.6 eV) monochromatic X-rays (bright lines). Therefore, each Al2p
/ Si2p the Si in SiO ₂ from the energy of the X-ray
Can be determined from the peak value of the photoelectron energy part obtained by subtracting the binding energy of 103.4 eV.

According to the second analysis mode, the distribution depth from the surface can be known by comparing the intensity ratios of the samples having different distributions in the depth direction as shown in FIG. FIGS. 13A, 13B, and 13C show examples in which the thickness of SiO ₂ increases in order, and the intensity ratio in each depth direction of the photoelectron energy spectrum changes according to the thickness of SiO _2. I do. Therefore, the degree of condensation of the target element can be known by comparing the intensity ratio in the depth direction.

According to the embodiment of the present invention, a photoelectron energy spectrum of a plurality of monochromatic X-rays can be obtained by one irradiation, so that nondestructive measurement can be performed in a short time. 2. Description of the Related Art In an integrated circuit having a plurality of laminated microstructures, electrical characteristics are significantly changed due to defects, impurities, and the like in a minute region near a surface. According to the analysis in the depth direction according to the present invention, a more reliable device can be produced. In particular, three-dimensional non-destructive analysis can be performed in real time by performing energy analysis by time-of-flight energy analysis using high-intensity pulsed X-rays such as laser plasma X-rays as an X-ray source. Note that the targets, samples, and wavelengths described in the above embodiment are examples, and the present invention is not limited to these.

[0035]

As described above, according to the X-ray photoelectron analyzer of the present invention, the sample in the depth direction can be instantaneously and non-destructively analyzed. Further, the depth direction analysis can be performed with the sample fixed without the need to replace the X-ray source by one X-ray source.

[Brief description of the drawings]

FIG. 1 is a diagram for explaining the analysis of the present invention by the depth of the X-ray photoelectron analyzer of the present invention.

FIG. 2 is a diagram showing the relationship between the escape depth of photoelectrons and the energy of photoelectrons.

FIG. 3 is a diagram illustrating a schematic configuration of an X-ray photoelectron analyzer of the present invention.

FIG. 4 is a flowchart illustrating a first analysis mode.

FIG. 5 is a schematic distribution diagram for explaining a first analysis mode;
It is a photoelectron energy spectrum diagram and a calibration diagram in a depth direction.

FIG. 6 is a flowchart for explaining a calibration curve.

FIG. 7 is a schematic distribution diagram, a photoelectron energy spectrum diagram, and a calibration diagram in a depth direction for explaining a calibration curve.

FIG. 8 is an example of a calibration curve of silicon oxide.

FIG. 9 is a schematic distribution diagram illustrating an example of application to a three-layer sample,
FIG. 3 is a diagram showing a photoelectron energy spectrum.

FIG. 10 is a flowchart for explaining a second mode of the depth direction analysis.

FIG. 11 is a schematic distribution diagram in the depth direction.

FIG. 12 is an example of a photoelectron energy spectrum according to a distribution state in a depth direction.

FIG. 13 is a schematic diagram illustrating an analysis comparison according to a second analysis mode.

[Explanation of symbols]

1. X-ray photoelectron analyzer, 2. X-ray irradiation means. 3 ... Filter, 4 ... Scanning means, 5 ... X-ray, 6 ... Sample stage,
7 ... photoelectron, 8 ... detection means, 9 ... vacuum chamber, 10
... Analyzer, 10a ... Calculator, 10b ... Storage, 10c
... output unit, 11 ... control means, 12 ... input means.

 ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Isao Kojima 1-1-1 Higashi, Tsukuba, Ibaraki Pref. AA01 AA10 AA20 BA08 CA03 EA04 EA06 EA09 FA03 FA06 FA14 FA30 GA01 GA06 GA08 KA01 KA11 KA13 MA05 NA06 NA07 NA17 PA07 SA10

Claims (1)

[Claims] An X-ray irradiating means for simultaneously irradiating a plurality of monochromatic X-rays having energy intervals, a detecting means for detecting a correlation amount relating to energy of photoelectrons generated from a sample, and irradiating the plurality of monochromatic X-rays Analyzing means for analyzing the energy spectrum of photoelectrons according to, the analyzing means specifies the depth from the sample surface by the photoelectron energy value of the photoelectron energy spectrum, the depth direction determined by the energy interval between monochromatic X-rays An X-ray photoelectron spectrometer, which performs analysis in the depth direction from one photoelectron energy spectrum at a resolution.