JP2001077248A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make die pads undeformable, even when the die pads receive flow of resin during resin sealing using a comb frame. SOLUTION: A comb frame is fixed using dies 8, so as to clamp at least a part of a die pad from both sides of the die pad (a). Resin 13 is charged to form a pre-molded package 14 (b). Thereafter, a semiconductor element 6 is fixed to one surface of the pad 2, and bonding pads on the element 6 are connected to electrode leads 3 of the package 14 that is molded in advance so as to be exposed, using electrode wires 7 (c). Finally, by cutting from an outer frame 4 of the comb frame 11, and at the same time, by cutting the leads 3 into a prescribed length, a semiconductor device is completed (d).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device having a semiconductor element used for information reporting and communication.

[0002]

2. Description of the Related Art FIG. 17 shows a sectional shape of a conventional semiconductor device. In this semiconductor device, a semiconductor element 6 is mounted on a die pad 2, the semiconductor element 6 and the electrode lead 3 are connected by an electrode wire 7, and the die pad 2, the semiconductor element 6 and the electrode lead 3 are sealed with a resin. It is fixed.

A conventional method for manufacturing a semiconductor device will be described with reference to FIG. As a comb frame according to this conventional manufacturing method, for example, the one shown in FIG. 19 is used.

First, after fixing the semiconductor element 6 to the die pad 2 at the center of the comb frame 1, wire bonding is performed to connect the semiconductor element 6 and the electrode lead 3 with the electrode wire 7 (FIG. 18 (a) )).

After that, a die pad 2, an electrode lead 3,
The semiconductor device 6 is sealed with a mold 8 covering the electrode wires 7 (FIG. 18 (b)), and a resin is poured into the space 10 from the gate 9 of the mold 8 to perform resin sealing. create. The gate 9 used at the time of this resin sealing is usually provided at a position in the direction of the side surface or the back surface of the die pad 2.

[0006]

The above-mentioned conventional method for manufacturing a semiconductor device has the following problems.

First, the die pad 2 receives a force in the flow direction of the resin due to the flow of the resin at the time of the resin sealing. Must be fixed to the outer frame 4 by at least two die pad fixing leads 5. If the die pad 2 actually moves or deforms when the resin flows, the die pad 2 comes into contact with the electrode lead 3 to cause a short circuit, or the deformation stress of the die pad 2 is transmitted to the semiconductor element 6 and the semiconductor device However, there has been a problem in that the characteristics of the device have been changed. Such a problem has become more prominent when the thickness of the comb frame 1 is reduced because it is necessary to reduce the pitch in order to realize a small-sized element having a large number of terminals.

Further, when two or more dice pad fixing leads 5 for supporting the dice pad 2 are used, the number of terminals of the electrode leads which are electrically independent decreases correspondingly, and the number of terminals which can be actually used is reduced. There was a problem. In particular, this has been a serious problem when the number of terminals cannot be increased by increasing the package size or reducing the terminal pitch.

In view of the above problems, the present invention uses a comb frame in which a die pad is fixed to an outer frame by a single die pad fixing lead, and has a shape in which the die pad is sandwiched when sealing with resin. By using a mold, it is possible to provide a manufacturing method capable of stably manufacturing a semiconductor device by preventing a die pad from being deformed even when subjected to a flow of resin at the time of resin sealing. Thus, the number of independent terminals can be increased.

[0010]

In order to solve the above-mentioned problems, a method of manufacturing a semiconductor device according to the present invention is directed to a method of manufacturing a semiconductor device, comprising: forming a comb frame having a dice pad having two main surfaces in a front-to-back relationship with each other; Using a pair of dies having a concave portion and a convex portion toward the main surface of the pad and having a resin filling port in a part, at least a part of the main surface of the die pad is pressed and sandwiched by the convex portion. And a step of pouring a resin into the concave portion from the resin filling port to perform resin molding.

With this configuration, the die pad is sandwiched by the pair of dies through at least a part of the main surface thereof at the time of molding the resin, so that the deformation of the die pad can be suppressed by the pressure of the resin at the time of forming the resin. it can.

In the method of manufacturing a semiconductor device according to the present invention, the comb frame includes an outer frame and only one fixed lead connecting the die pad and the outer frame.

With this configuration, since only one fixed lead for supporting the die pad is required, the number of potential independent terminals can be increased.

In the method of manufacturing a semiconductor device according to the present invention, in the above structure, the vicinity of the outer edge of the main surface of the die pad is pressed by the convex portion of the mold when the comb frame is sandwiched by the mold. is there.

According to this configuration, the die pad can be more firmly sandwiched by the mold, so that the deformation due to the flow of the resin is less likely to occur.

The method for manufacturing a semiconductor device according to the present invention, having such a configuration, includes a step of mounting a semiconductor element on at least a part of the main surface of the die pad before the step of performing resin molding.

With this configuration, the semiconductor element can be further sealed with a resin in one step.

In the method of manufacturing a semiconductor device according to the present invention, a part of the semiconductor element is pressed by the convex portion of the mold during the step of performing resin molding.

With this configuration, the semiconductor element can be further exposed, and the adjustment of the semiconductor element can be facilitated.

The method of manufacturing a semiconductor device according to the present invention includes a step of attaching a protective member covering the semiconductor element after the step of performing resin molding.

According to this configuration, the semiconductor element can be further protected by the protection member.

The method of manufacturing a semiconductor device according to the present invention, having such a configuration, comprises a step of attaching a protective member covering the semiconductor element after the step of mounting the semiconductor element, and the step of forming the mold by the resin molding step. A part of the semiconductor element is pressed by the convex portion with the protective member interposed therebetween.

According to this configuration, since the protective member is further mounted on the semiconductor element and sandwiched by the mold, damage to the semiconductor element by the mold can be reduced.

In the method of manufacturing a semiconductor device according to the present invention, such a configuration is sandwiched by a mold having a concave portion for covering the semiconductor element in the step of performing resin molding.

According to this configuration, since a mold having a concave portion that further covers the semiconductor element is used, resin molding can be performed while suppressing deformation of the die pad, and the semiconductor element can be exposed without being soiled by the resin. it can.

In the method of manufacturing a semiconductor device according to the present invention, a protective member for covering the semiconductor element is attached after the step of performing resin molding.

With this configuration, the semiconductor element can be further protected by the protective member.

In the method of manufacturing a semiconductor device according to the present invention, a semiconductor element is mounted after resin molding, and a protective member for covering the semiconductor element is attached.

According to this configuration, the semiconductor elements can be further integratedly arranged including the protective member.

A semiconductor device according to the present invention includes a semiconductor element, a dice pad on which the semiconductor element is mounted, an electrode terminal disposed outside the dice pad, and an outer edge of the dice pad and an inner edge of the electrode terminal. It has a covering resin and a wiring layer provided on the resin and electrically connecting the semiconductor element and the electrode terminal.

According to this configuration, the length of the wire bond electrically connected to the semiconductor element can be shortened.

A semiconductor device according to the present invention includes a semiconductor element, a dice pad on which the semiconductor element is mounted, an electrode terminal disposed outside the dice pad, and the semiconductor element formed on the electrode terminal, and And a flip chip bond for electrically connecting the electrode terminals.

According to this configuration, wire bonding to the semiconductor element can be made unnecessary.

According to the semiconductor device of the present invention, the electrode terminals are held by a resin.

According to this configuration, since the electrode terminals are further held by the resin, a flip chip bond can be stably provided on the electrode terminals.

[0036]

Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) A comb frame, a semiconductor device, and a method of manufacturing a semiconductor device according to a first embodiment of the present invention will be described with reference to FIGS.

FIG. 2 shows a view of the comb frame of the present invention according to the first embodiment as viewed from above. The comb frame 11 has a dice pad 2 for arranging a semiconductor element on one of the front and back surfaces.
A plurality of electrode leads 3 are disposed on both sides of the die frame 2, and the die pad 2 is fixed to the outer frame 4 of the comb frame 11 with only one die pad fixing lead 12.

FIG. 1 shows a process flow of a semiconductor device according to the first embodiment of the present invention and a method of manufacturing the same.

First, the comb frame 11 is connected to the dice pad 2
Is fixed with a mold 8 so as to be sandwiched from both sides (FIG. 1A), and a resin 13 is poured to form a pre-mold package 14 (FIG. 1B). FIG.
In FIG. 5A, the mold 8 appears to be divided into left and right cavities, but the resin 13 flows in because the cavities are connected three-dimensionally in the direction perpendicular to the plane of the paper. The resin 13 is injected from the lower part of the electrode lead 3.
The resin 13 flows into the upper part of the electrode lead 3 through the gap.

FIG. 3 is a top view of the pre-mold package 14. Next, the semiconductor element 6 is fixed to one surface of the die pad 2, and the bonding pad on the semiconductor element 6 and the electrode lead 3 of the pre-molded package 14 formed so as to be exposed in advance are connected by the electrode wire 7 ( Finally, the semiconductor device is completed by cutting the electrode lead 3 to a predetermined length at the same time as cutting out the outer frame 4 of the comb frame 11 (FIG. 1 (c)).
(D)).

According to such a manufacturing method, all the potentials of the terminals of the pre-mold package 14 can be made independent. Thus, the number of terminals having independent potentials of the semiconductor device can be increased.

Further, by such a manufacturing method, since the die pad 2 is firmly fixed by the upper and lower molds 8, a semiconductor device having the die pad 2 which is hardly deformed even by the pressure of the resin 13 is manufactured. be able to.

In the semiconductor device manufactured in this manner, the surface of the die pad 2 opposite to the surface on which the semiconductor element 6 is fixed is exposed, so that the heat generated by the semiconductor element 6 is efficiently released. In addition, a heat sink, another semiconductor element, or the like can be mounted on the surface, so that a semiconductor device excellent in heat dissipation or an integrated semiconductor device can be obtained.

In the semiconductor device shown in FIG. 2 and the method of manufacturing the same, a portion sandwiched by the shape of the die 8 has a shape sandwiching the front surface of the die pad 2 and the electrode lead 3 and the back surface of the die pad 2. Figure 4
As shown in (a), the same effect can be obtained by sandwiching the electrode leads 3 on both sides.

Further, as shown in FIG. 4B, an electrode wiring pattern 15 may be formed on the surface of the resin 13 by sandwiching only the die pad 2 so that the electrode lead 3 is not exposed. By doing so, the length of the electrode wire 7 can be reduced.

Also, as shown in FIG. 4C, the same effect can be obtained even if the semiconductor element 6 is fixed to the electrode lead 3 by the flip chip bond 16, and the number of electrodes can be reduced without wire bonding. Many elements can be easily realized. Further, since the electrode terminals are held by resin, the flip-chip bond 16
Can be provided stably.

Further, as shown in FIG. 4D, the semiconductor element 6 disposed on the exposed portion of the die pad 2 is further
By potting 7 or fixing a sealing plate 18 made of glass, resin or the like on the upper portion as shown in FIG. 4 (e), the hermeticity of the semiconductor element 6 is improved, and a semiconductor device having good reliability is realized. can do.

In the above embodiment, a fine pitch is used to realize a small semiconductor device having a large number of terminals.
The same effect can be obtained in a thin comb frame, a pre-mold package and a semiconductor device,
More effective.

(Second Embodiment) A semiconductor device according to a second embodiment of the present invention and a method of manufacturing the same will be described with reference to FIG.
This will be described with reference to FIG.

In this embodiment, the comb frame 11 used is the same as in the first embodiment,
Are fixed to the outer frame 4 of the comb frame 11 with only one die pad fixing lead 12.

FIG. 5 shows a process flow according to the method for manufacturing a semiconductor device of the present invention according to this embodiment.

First, the semiconductor element 6 of the comb frame 11 is fixed on the die pad 2 (FIG. 5A), and the bonding pad on the semiconductor element 6 and the electrode lead 3 are connected by the electrode wire 7 (FIG. 5A). 5 (b)), and then fix at least a part of the die pad 2 with a mold 8 so as to sandwich it from both sides (FIG. 5 (c)), and pour the resin 13 into the space 10 from the gate 9 to form the package 19. Finally, the semiconductor device is completed by cutting out the package 19 from the outer frame 4 of the comb frame 11 and cutting the electrode lead 3 to a predetermined length (FIG. 5D).

Although the left and right cavities of the mold 8 in FIG. 5C appear to be separated, the resin 13 flows in because the cavities are connected three-dimensionally in the direction perpendicular to the paper surface. The resin 13 is injected from the lower part of the electrode lead 3, and the resin 13 flows into the upper part of the electrode lead 3 through the gap between the electrode leads 3.

According to such a manufacturing method, in addition to the effects of the first embodiment, the semiconductor element 6 is fixed to the semiconductor element 6 and the die pad 2 before encapsulating the resin. And the reliability of the semiconductor element can be improved.

As shown in FIG. 6, by selecting the vicinity of the outer edge of the die pad 2 or the entire outer peripheral portion as the portion to be sandwiched by the mold 8, deformation due to resin flow can be made more difficult to occur.

(Embodiment 3) A semiconductor device according to a third embodiment of the present invention and a method of manufacturing the same will be described with reference to FIG.
This will be described with reference to FIG.

In this embodiment, the comb frame used is the same as that of the first embodiment, and the dice pad 2 is composed of only one die pad fixing lead 12 and the com frame 1 is used.
1 is fixed to the outer frame 4.

FIG. 7 shows a process flow relating to the semiconductor device of the present invention and the method of manufacturing the same according to this embodiment.

In the comb frame 11, the first semiconductor element 20 is fixed on the die pad 2, and the bonding pads on the first semiconductor element 20 and the electrode leads 3 are connected by the electrode wires 7 (FIG. 7 ( a)) Then, the mold 8 is held so as to sandwich at least a part of the die pad 2 from both sides.
(FIG. 7B), and the resin 13 is poured into the space 10 from the gate 9 to form a package 19 (FIG. 7).
(C)). Although the left and right cavities appear to be separated in the mold 8 in FIG. 7B, the resin 13 flows in because the cavities are connected three-dimensionally in the direction perpendicular to the paper surface. The resin 13 is injected from the lower part of the electrode lead 3, and the resin 13 flows into the upper part of the electrode lead 3 through the gap between the electrode leads 3.

Next, the second semiconductor element 21 is arranged on the exposed portion of the die pad 2, and wire bonding is performed with the electrode wires 7 (FIG. 7D).

Finally, the semiconductor device is completed by cutting out the comb frame 11 from the outer frame 4 and simultaneously cutting the electrode lead 3 to a predetermined length (FIG. 7E).

According to such a manufacturing method, since the die pad 2 is firmly fixed by the upper and lower molds 8, the same effect as that of the first embodiment can be obtained, and a plurality of semiconductor elements can be mounted on the die pad 2. Therefore, an integrated semiconductor device can be obtained.

The same effects as those of the first embodiment can be obtained for the semiconductor device manufactured as described above.

As shown in FIG. 8 (a), the vicinity of the outer edge of the die pad 2 or the entire outer peripheral portion may be selected as a portion to be sandwiched by the mold 8. By doing so, the die pad 2 can be more firmly sandwiched by the mold 8,
The effect is obtained that the deformation due to the flow of the resin is less likely to occur.

Further, the resin potting 17 (FIG. 8B) and the sealing plate 18 (FIG. 8) are applied to the second semiconductor element 21.
By performing hermetic sealing according to (c)), a semiconductor device more advantageous in reliability can be obtained.

Further, when the second semiconductor element 21 is a light receiving element or a light emitting element, light can be input and output by sealing with a transparent resin potting or a transparent glass plate.

When the semiconductor element is a light receiving element or a light emitting element, an optical lens 22 (FIG. 9A) and a diffraction element 23 (grating or hologram element) are used instead of the sealing plate 18 as shown in FIG. FIG. 9B), prism 24
By sealing with optical elements such as (FIG. 9C) and the polarizing filter 25 (FIG. 9D), it is possible to realize a semiconductor device in which not only hermetic sealing but also optical functions are integrated in a hybrid manner. it can.

In the third embodiment, a plurality of semiconductor elements are all mounted on one dice pad. However, two dice pads 26 and 27 having electrode leads 3 shown in FIG. Each having an outer frame 2
8, a comb frame 31 fixed by only one die pad fixing lead 29, 30 is used, and dice pads 26 and 27 are arranged on the first and second semiconductor elements 20 and 21, respectively, as shown in FIG. The structure may be such that:

With such a configuration, a plurality of semiconductor elements having different potentials can be housed in the same package.

At this time, as for the semiconductor elements having the same substrate potential, as shown in FIG.
It may be mounted on the same dice pad 26 on which the first semiconductor element 20 is mounted.

With this configuration, the number of dice pads can be reduced, which is more effective in reducing the size of the semiconductor device.

These semiconductor devices are resin-molded such that each die pad is sandwiched between upper and lower molds when the resin is sealed.

When arranging dice pads for arranging more semiconductor chips derived from this structure, conventionally, when each dice pad is fixed by two leads (the number of dice pads × 2) Although a die pad fixing lead was necessary, according to the present invention, (die pad × 1) dice pad fixing leads are sufficient, so that the number of terminals of the semiconductor element can be reduced.

(Fourth Embodiment) A semiconductor device and a method of manufacturing the same according to a fourth embodiment of the present invention will be described with reference to FIG.
This will be described with reference to FIGS.

In this embodiment, the comb frame to be used is the same as that of the first embodiment, and the die pad 2 is fixed to the outer frame 5 of the comb frame 11 with only one lead 12.

With respect to the fourth embodiment, a process flow relating to a semiconductor device and a method of manufacturing the same according to the present invention is shown in FIG.
3 is shown.

First, the semiconductor element 6 of the comb frame 11 is fixed on the die pad 2 (FIG. 13).
(A)) Next, the bonding pads on the semiconductor element 6 and the electrode leads 3 are connected by wire bonding with the electrode wires 7 (FIG. 13B).

Thereafter, a part of the front surface of the semiconductor element 6 and at least a part of the back surface of the die pad 2 are fixed with a mold 8 so as to be sandwiched from both sides (FIG. 13C). The package 13 is formed by pouring the resin 13 into the package 13 (FIG. 13D). Thus, the semiconductor device is completed.

Although the left and right cavities appear to be divided in the mold drawing in FIG. 13C, the resin 13 flows in because the cavities are connected three-dimensionally in the direction perpendicular to the paper surface. In addition, the resin 13 is provided from the lower part
Is injected, but the resin 13 also flows into the upper part of the electrode lead 3 through the gap between the electrode leads 3.

According to such a manufacturing method, the semiconductor element 6
Since the die pad 2 and the die pad 2 are firmly fixed by the upper and lower molds 8, the same effect as in the first embodiment can be obtained, and a semiconductor device in which all the potentials of the terminals are independent can be realized. In particular, when the semiconductor element 6 is a light-emitting or light-receiving element, the surface of the semiconductor element 6 is sandwiched between the molds 8 so that the light-emitting or light-receiving surface is selected, so that the surface of the light-emitting or light-receiving section is covered Since the resin 13 hardly goes around, a device with less light loss due to the resin 13 can be realized.

The semiconductor device manufactured as described above has the same effects as those of the first embodiment, and the semiconductor element 6 can be seen from the outside, so that the semiconductor device can be easily adjusted. it can.

Further, as shown in FIG. 14A, after a protective member 34 such as glass is adhered to the upper surface of the semiconductor element 6, resin molding is performed in such a manner that the surface of the protective member 34 and the rear surface of the die pad 2 are sandwiched by a mold. The semiconductor element 6 by the mold 8
A semiconductor device with less damage to the semiconductor device can be realized. In this structure, in the case of a light emitting or light receiving element as a semiconductor element, the use of a transparent member such as a glass plate as a protective member enables light input / output, which is more effective.

As shown in FIG. 14, an optical lens 35 (FIG. 14B) and a diffraction element 36 are used as the protection member 34.
(Grating or hologram element) (FIG. 14
(C)), the use of optical elements such as the prism 37 (FIG. 14 (d)) and the polarization filter 38 (FIG. 14 (e)) makes it possible to control the input and output of light, and to provide a device with higher functionality. Can be realized.

Further, as shown in FIG.
In the case where the light receiving element 39 is arranged on the die pad 2 and the light emitting element 40 is arranged above the light receiving element 39, light receiving around the light emitting element 40 is performed by a mold 41 having a concave portion larger than the light emitting element 40. By pressing the surface of the element 39 with the mold 41, the resin 13 hardly goes around the light emitting element 40 without pressing the light emitting element 40,
The light-emitting element 40 is hardly stressed by the resin, and the resin 13 can be hardly deteriorated by the heat generated from the light-emitting element 40.

(Fifth Embodiment) A semiconductor device according to a fifth embodiment of the present invention will be described with reference to FIG.

In this embodiment, the comb frame is the same as that of the first embodiment, and the dice pad is fixed to the outer frame 5 of the comb frame 11 by only one die pad fixing lead 12. .

In FIG. 16A, the die pad 42
3 shows a structure of the package 43 in which the thickness of the package 43 is larger than the thickness of the electrode lead 3. With such a structure, the die pad 42 is more exposed on the back surface of the package 43, so that the heat generated by the semiconductor element 6 can be more efficiently dissipated, and the back surface of the package 43 has a large heat capacity. By fixing the member or the member such as the radiation fin, the effect that the heat generated from the semiconductor element 6 can be more efficiently dissipated can be obtained.

Further, as shown in FIG. 16B, the surface area of the surface opposite to the side on which the semiconductor element 6 is mounted is increased,
With a structure in which the area of the contact surface between the die pad 42 and the resin 13 is increased, it is possible to prevent the interface between the die pad 42 and the resin 13 from completely adhering due to a difference in material, thereby preventing a decrease in airtightness. The airtightness can be further improved.

Further, as shown in FIG. 16C, by providing recesses 44 corresponding to a hexagon wrench, a plus screw, and a minus screw on the back surface of the die pad 42, it is easy to adjust the rotation of the semiconductor element 6. Structure can be obtained.

The design pitch (realizable line width and line interval) of the electrode lead 3 is generally
Is determined by the thickness of That is, when the thickness of the electrode lead 3 is smaller, the pitch can be made finer when processing by etching or pressing, and more electrode leads can be arranged in the same space. However, when the electrode leads are thinned,
Problems such as reduced strength and deformation during resin molding occur. In order to solve this problem, the tip of the electrode lead 3 is made thinner and its outer side is made thicker as shown in FIG. This leads to an effect that the leads can be densely arranged, the strength can be secured, and both the strength and the increase in the number of lead terminals can be achieved.

[0092]

As described above, according to the method of manufacturing a semiconductor device of the present invention, it is possible to increase the number of terminals having independent potentials and to provide a semiconductor device having a dice pad which is hardly deformed by the pressure of resin. The device can be manufactured.

Further, according to the method of manufacturing a semiconductor device of the present invention, heat generated by a semiconductor element can be efficiently released, and a heat sink or another semiconductor element can be mounted on the surface. Thus, a semiconductor device having excellent heat dissipation and an integrated semiconductor device can be obtained.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a method for manufacturing a semiconductor device according to a first embodiment of the present invention;

FIG. 2 is a top view of the comb frame according to the first to fifth embodiments of the present invention.

FIG. 3 is a top view of the pre-mold package according to the first embodiment of the present invention.

FIG. 4 is a sectional view showing another example of the semiconductor device according to the embodiment;

FIG. 5 is a sectional view showing the method of manufacturing the semiconductor device according to the second embodiment of the present invention;

FIG. 6 is a sectional view showing another example of the semiconductor device according to the embodiment;

FIG. 7 is a sectional view showing the method of manufacturing the semiconductor device according to the third embodiment of the present invention;

FIG. 8 is a sectional view showing another example of the semiconductor device according to the embodiment;

FIG. 9 is a sectional view showing another example of the semiconductor device.

FIG. 10 is a top view of another example of the comb frame according to the embodiment;

FIG. 11 is a sectional view showing another example of the semiconductor device according to the embodiment;

FIG. 12 is a sectional view showing another example of the semiconductor device.

FIG. 13 is a sectional view showing the method of manufacturing the semiconductor device according to the fourth embodiment of the present invention;

FIG. 14 is a sectional view showing another example of the semiconductor device according to the embodiment;

FIG. 15 is a sectional view showing another example of the method for manufacturing the semiconductor device;

FIG. 16 is a sectional view showing a semiconductor device according to a fifth embodiment of the present invention;

FIG. 17 is a sectional view of a conventional semiconductor device.

FIG. 18 is a cross-sectional view showing a conventional method for manufacturing a semiconductor device.

FIG. 19 is a top view of a conventional comb frame.

[Explanation of symbols]

 1, 11, 31 Com frame 2, 26, 27, 42 Dice pad 3 Electrode lead 4, 28 Outer frame 5, 12, 29, 30 Die pad fixing lead 6 Semiconductor element 7 Electrode wire 8, 41 Mold 9 Gate 10 Space 13, 17 Resin 14 Pre-mold package 15 Electrode wiring pattern 16 Flip chip bond 18 Sealing plate 19, 33, 43 Package 20 First semiconductor element 21 Second semiconductor element 22, 35 Optical lens 23, 36 Diffraction grating 24 , 37 prism 25, 38 polarizing filter 32 third semiconductor element 34 protective member 39 light receiving element 40 light emitting element 44 recess

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Shinichi Ijima 1-1, Kochi-cho, Takatsuki-shi, Osaka Matsushita Electronics Co., Ltd. (72) Inventor Akio Yoshikawa 1-1-1, Kochi-cho, Takatsuki-shi, Osaka Matsushita Electronics Industrial Co., Ltd. F-term (reference) 4M109 AA01 AA04 BA01 CA05 CA21 DA04 DA07 DB02 EE12 EE13 GA01

Claims (13)

[Claims] 1. A comb frame having a dice pad having two main surfaces in a front-to-back relationship with each other is provided. Using a pair of molds having an entrance, at least a part of the main surface of the die pad is pressed and sandwiched by the convex portion,
A method of manufacturing a semiconductor device, comprising a step of pouring a resin into the recess from the resin sealing opening to perform resin molding. 2. The method of manufacturing a semiconductor device according to claim 1, wherein said comb frame includes an outer frame, and only one fixed lead connecting said die pad and said outer frame. 3. The method of manufacturing a semiconductor device according to claim 1, wherein the vicinity of an outer edge of a main surface of the die pad is pressed by a convex portion of the mold when the comb frame is sandwiched by the mold. 4. The method according to claim 1, further comprising a step of mounting a semiconductor element on at least a part of a main surface of the die pad before the step of performing the resin molding. 5. The semiconductor device according to claim 4, wherein a part of the semiconductor element is pressed and held by the protrusion of the mold during the step of performing the resin molding.
The manufacturing method of the semiconductor device described in the above. 6. The method of manufacturing a semiconductor device according to claim 5, further comprising a step of attaching a protection member covering said semiconductor element after said step of performing resin molding. 7. A step of attaching a protective member covering the semiconductor element after the step of mounting the semiconductor element,
The method of manufacturing a semiconductor device according to claim 4, wherein a part of the semiconductor element is pressed by the protrusion of the mold through the protective member in the resin molding step. 8. The method for manufacturing a semiconductor device according to claim 4, wherein said resin molding is sandwiched by a mold having a concave portion covering said semiconductor element. 9. The method of manufacturing a semiconductor device according to claim 8, wherein a protection member for covering the semiconductor element is attached after the step of performing the resin molding. 10. The method of manufacturing a semiconductor device according to claim 1, wherein a semiconductor element is mounted after the step of performing resin molding, and a protective member that covers the semiconductor element is attached. 11. A semiconductor element, a dice pad on which the semiconductor element is mounted, an electrode terminal disposed outside the dice pad, a resin covering an outer edge of the dice pad and an inner edge of the electrode terminal, A semiconductor device having a wiring layer provided on a resin and electrically connecting the semiconductor element and the electrode terminal. 12. A semiconductor device, a dice pad on which the semiconductor device is mounted, an electrode terminal disposed outside the dice pad, and electrically connecting the semiconductor element and the electrode terminal formed on the electrode terminal. And a flip-chip bond that is electrically connected. 13. The semiconductor device according to claim 12, wherein said electrode terminal is held by a resin.