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JP2000031532A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JP2000031532A
JP2000031532A JP19902098A JP19902098A JP2000031532A JP 2000031532 A JP2000031532 A JP 2000031532A JP 19902098 A JP19902098 A JP 19902098A JP 19902098 A JP19902098 A JP 19902098A JP 2000031532 A JP2000031532 A JP 2000031532A
Authority
JP
Japan
Prior art keywords
light emitting
phosphor
emitting device
light
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19902098A
Other languages
Japanese (ja)
Other versions
JP3486345B2 (en
Inventor
Hideto Sugawara
原 秀 人 菅
Chisato Furukawa
川 千 里 古
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Development and Engineering Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Engineering Co Ltd filed Critical Toshiba Corp
Priority to JP19902098A priority Critical patent/JP3486345B2/en
Publication of JP2000031532A publication Critical patent/JP2000031532A/en
Application granted granted Critical
Publication of JP3486345B2 publication Critical patent/JP3486345B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device where nonuniformity of light emission can be resolved by making spreading thickness of fluorescent substances uniform. SOLUTION: When a plurality of kinds of fluorescent substances are spread on the periphery of a light emitting element, mixing nonuniformity to be generated by difference of specific gravities and grain diameters of the respective fluorescent substances is prevented. For the structure, the light emitting element is mounted in such a manner that the element is buried in a mounting member. A plurality of fluorescent substances 13, 14, 15 are spread on a practically plane surface obtained by the above manner. Thereby a uniform mixture of the fluorescent substances 13, 14, 15 or spreading on uniform layers are possible, so that light emission free from color nonuniformity can be realized.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は半導体発光装置に関
し、特にＬＥＤ（light emitting diode：発光ダイオー
ド）などの半導体発光素子と複数種類の蛍光体との組み
合わせにより発光する半導体発光装置に関する。The present invention relates to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device that emits light by combining a semiconductor light emitting element such as an LED (light emitting diode) and a plurality of kinds of phosphors.

【０００２】[0002]

【従来の技術】半導体発光素子と蛍光体とを組み合わせ
た半導体発光装置は、その組み合わせや種類を選択する
ことにより発光色を自由に変化させることができるた
め、新しい光源として注目されている。すなわち、半導
体発光素子から放出される１次光を蛍光体により波長変
換して２次光として取り出すことにより、得られる波長
の選択の自由度を大幅に拡げることができる。2. Description of the Related Art A semiconductor light-emitting device in which a semiconductor light-emitting element and a phosphor are combined is attracting attention as a new light source because the emission color can be freely changed by selecting the combination and type. That is, the primary light emitted from the semiconductor light emitting element is converted in wavelength by the fluorescent material and extracted as secondary light, so that the degree of freedom in selecting the obtained wavelength can be greatly expanded.

【０００３】[0003]

【発明が解決しようとする課題】しかし、本発明者の試
作検討の結果、半導体発光素子と複数の種類の蛍光体と
を組み合わせた従来の半導体発光装置では以下に詳述す
る問題があることが分かった。However, as a result of the examination of the prototype by the present inventors, the conventional semiconductor light emitting device in which the semiconductor light emitting element and a plurality of kinds of phosphors are combined has the following problems. Do you get it.

【０００４】図９は、従来の半導体発光装置の概略構成
を表す断面図である。すなわち、同図の半導体発光装置
は、リードフレーム１０２に形成された凹状のカップ部
の底面にＬＥＤチップ１０１がマウントされ、ワイア１
０６、１０７により配線され、蛍光体１１１〜１１３が
塗布されている。ここで、ＬＥＤ１０１は、紫外光領域
で発光するものであり、蛍光体は、その紫外光を吸収し
て赤色の光を放出する、赤色（Ｒ）蛍光体１１１、緑色
の光を放出する緑色（Ｇ）蛍光体１１２、青色の光を放
出する青色（Ｂ）蛍光体の混合物である。図９に示した
半導体発光装置は、このように、ＬＥＤ１０１からの紫
外光を波長変換してＲＧＢからなる白色光を得ることが
できる。FIG. 9 is a sectional view showing a schematic configuration of a conventional semiconductor light emitting device. That is, in the semiconductor light emitting device of FIG. 1, the LED chip 101 is mounted on the bottom surface of the concave cup portion formed on the lead frame 102, and the wire 1
Wirings 06 and 107 are applied, and phosphors 111 to 113 are applied. Here, the LED 101 emits light in the ultraviolet light region, and the phosphor absorbs the ultraviolet light and emits red light. The red (R) phosphor 111 emits red light, and the green light emits green light. G) a mixture of a phosphor 112 and a blue (B) phosphor that emits blue light. As described above, the semiconductor light emitting device shown in FIG. 9 can convert the wavelength of the ultraviolet light from the LED 101 into white light composed of RGB.

【０００５】しかし、本発明者が図９に示したような半
導体発光装置を試作・評価したところ、混合斑すなわち
発光の「むら」を引き起こしてしまうという問題がある
ことが分かった。具体的には、例えば、図９の半導体発
光装置を光の取り出し方向から眺めた場合に、発光部の
中央すなわちＬＥＤ１０１の垂直上方付近と、それより
も端の周辺部分とでは、発光色が異なるという問題が発
見された。However, when the present inventor prototyped and evaluated a semiconductor light emitting device as shown in FIG. 9, it was found that there was a problem of causing unevenness of mixing, that is, "unevenness" of light emission. Specifically, for example, when the semiconductor light emitting device of FIG. 9 is viewed from the light extraction direction, the emission color is different between the center of the light emitting unit, that is, the vicinity near the vertical upper part of the LED 101 and the peripheral part at the end. The problem was discovered.

【０００６】本発明者はさらに詳細な検討を行った結
果、このような発光の「むら」は、ＲＧＢそれぞれの蛍
光体の比重や粒径の違いによるものであり、その塗布お
よび溶解させた樹脂の硬化の工程で発生することを見出
した。さらに、この現象にはＬＥＤチップ１０１の存在
による蛍光体塗布面の段差が大きく影響を及ぼしている
ことを知得するに至った。As a result of further detailed studies, the present inventors have found that such "unevenness" of light emission is due to differences in the specific gravities and particle diameters of the respective phosphors of RGB. Occurred during the curing process. Furthermore, it has been found that this phenomenon is greatly affected by the step on the phosphor-coated surface due to the presence of the LED chip 101.

【０００７】すなわち、図９から分かるように、ＬＥＤ
１０１の上部に塗布される蛍光体層と、ＬＥＤ１０１の
周囲のカップ部に塗布される蛍光体層とでは、その塗布
厚が大幅に異なる。ＬＥＤ１０１の厚みは、通常１００
〜２００μｍであり、その上に塗布される蛍光体の塗布
厚は、数１０μｍである場合が多い。つまり、ＬＥＤの
上部と、ＬＥＤの周囲のカップ部では、蛍光体の塗布厚
が数倍も異なる。That is, as can be seen from FIG.
The thickness of the phosphor layer applied to the upper portion of the LED 101 and the thickness of the phosphor layer applied to the cup portion around the LED 101 are significantly different. The thickness of the LED 101 is usually 100
２００200 μm, and the thickness of the phosphor applied thereon is often several tens μm. That is, the coating thickness of the phosphor is several times different between the upper part of the LED and the cup around the LED.

【０００８】塗布厚が異なると、塗布した蛍光体と溶媒
との混合物が乾燥、硬化するまでの時間が異なり、蛍光
体の比重の差などによってＲＧＢの蛍光体粒子の偏析の
状態が異なる。ここで、蛍光体の粒径と比重について代
表的な値を挙げると、赤色（Ｒ）蛍光体の粒径は約６μ
ｍ、比重は約６．４である。また、緑色（Ｇ）蛍光体の
粒径は約３μｍ、比重は約３．８であり、青色（Ｂ）蛍
光体の粒径は約４μｍ、比重は約４．２である。このよ
うに粒径や比重が異なる複数の蛍光体粒子を溶媒に混合
して塗布した場合には、塗布厚によって、蛍光体粒子の
偏析の状態が異なる。If the coating thickness is different, the time required for the mixture of the applied phosphor and the solvent to dry and harden differs, and the state of segregation of the RGB phosphor particles differs due to the difference in the specific gravity of the phosphor. Here, as a typical value of the particle size and specific gravity of the phosphor, the particle size of the red (R) phosphor is about 6 μm.
m, specific gravity is about 6.4. The particle size of the green (G) phosphor is about 3 μm and the specific gravity is about 3.8, and the particle size of the blue (B) phosphor is about 4 μm and the specific gravity is about 4.2. When a plurality of phosphor particles having different particle diameters and specific gravities are mixed with a solvent and applied, the state of segregation of the phosphor particles differs depending on the applied thickness.

【０００９】例えば、塗布厚が厚い部分においては、比
重の大きい蛍光体粒子がより顕著に下方に偏析する。そ
の結果として、ＬＥＤ１０１の上部とその周囲とでは、
蛍光体の混合状態が異なり、発光色のバランスが異なる
ために、発光の「むら」が生ずることとなる。For example, in the portion where the coating thickness is large, the phosphor particles having a large specific gravity segregate more remarkably downward. As a result, the upper part of the LED 101 and its surroundings
Since the mixing state of the phosphors is different and the emission color balance is different, "unevenness" of light emission occurs.

【００１０】図９をみても、ＬＥＤチップをマウントし
たことによる段差の存在により、ＬＥＤチップ上部と周
辺で蛍光体粒子の比重の違いにより混合比が異なってし
まい、その結果として、ＬＥＤからの発光を変換した直
上方向の光と横方向に向かい反射版で反射した光とで
は、その発光色に違いがあることは容易に見てとれる。
本発明は、かかる独自の課題の認識に基づいてなされた
ものである。すなわち、その目的は、蛍光体の塗布厚を
均一にすることにより発光の「むら」を解消することが
できる半導体発光装置を提供することにある。Referring to FIG. 9, the presence of the step due to the mounting of the LED chip causes the mixing ratio to differ due to the difference in the specific gravity of the phosphor particles between the upper part and the peripheral part of the LED chip. It can be easily seen that there is a difference in the emission color between the light in the upward direction converted from the light and the light reflected in the horizontal direction by the reflection plate.
The present invention has been made based on the recognition of such a unique problem. That is, an object of the present invention is to provide a semiconductor light emitting device that can eliminate "unevenness" of light emission by making the coating thickness of a phosphor uniform.

【００１１】[0011]

【課題を解決するための手段】本発明は、複数種類の蛍
光体を発光素子の周辺に塗布する場合に、それぞれの蛍
光体の比重や粒径の違いにより発生する混合斑を防ぐも
のであり、その構造として実装部材の上に埋め込まれた
形で発光素子をマウントし、このようにして得られた実
質的に平坦な面に複数の蛍光体を塗布する構造としたこ
とを特徴とする。このようにすれば、蛍光体の均一混
合、あるいは均一層上の塗布が可能になり色斑の無い発
光を実現することができる。SUMMARY OF THE INVENTION The present invention, when a plurality of types of phosphors are applied to the periphery of a light emitting element, prevents mixing spots caused by differences in specific gravity and particle size of each phosphor. The structure is such that a light emitting element is mounted in a form embedded on a mounting member, and a plurality of phosphors are applied to a substantially flat surface obtained in this manner. This makes it possible to uniformly mix the phosphors or to apply them on a uniform layer, thereby realizing light emission without color spots.

【００１２】すなわち、本発明の半導体発光装置は、実
装部材と、前記実装部材にマウントされた発光素子と、
前記発光素子から放出される１次光を吸収して前記１次
光とは異なる波長を有する２次光を放出する蛍光体と、
を備えた半導体発光装置であって、前記蛍光体は、実質
的に平坦な面の上において一定の厚みを有するように形
成されていることを特徴とする。That is, the semiconductor light emitting device of the present invention comprises a mounting member, a light emitting element mounted on the mounting member,
A phosphor that absorbs primary light emitted from the light emitting element and emits secondary light having a different wavelength from the primary light;
Wherein the phosphor is formed to have a certain thickness on a substantially flat surface.

【００１３】または、本発明の半導体発光装置は、実装
部材と、前記実装部材にマウントされた発光素子と、前
記発光素子から放出される１次光を吸収して前記１次光
とは異なる波長を有する２次光を放出する蛍光体と、を
備えた半導体発光装置であって、前記実装部材は、前記
蛍光体が塗布される主面に凹部を有し、前記発光素子
は、前記実装部材の前記凹部に埋め込まれるようにマウ
ントされ、前記実装部材の前記主面と前記発光素子の上
面とは、実質的に同一の平面内に設けられることにより
実質的に平坦な塗布面を構成し、前記蛍光体は、前記塗
布面に一定の厚みを有するように塗布されていることを
特徴とする。Alternatively, a semiconductor light emitting device according to the present invention includes a mounting member, a light emitting element mounted on the mounting member, and a primary light emitted from the light emitting element having a wavelength different from the primary light. A phosphor that emits secondary light, comprising: the mounting member has a concave portion on a main surface on which the phosphor is applied, and the light emitting element includes the mounting member. The main surface of the mounting member and the upper surface of the light emitting element are mounted in substantially the same plane to constitute a substantially flat coating surface, The phosphor is applied so as to have a constant thickness on the application surface.

【００１４】ここで、前記蛍光体は、互いに比重が異な
る２種類以上の蛍光体を含むことを特徴とする。Here, the phosphor is characterized in that it contains two or more kinds of phosphors having different specific gravities.

【００１５】また、前記２種類以上の蛍光体は、それぞ
れの種類毎に層状に形成されて積層されていることを特
徴とする。Further, the two or more types of phosphors are formed in layers for each type and laminated.

【００１６】または、本発明の半導体発光装置は、発光
素子と、前記発光素子から放出される１次光を吸収して
前記１次光とは異なる第１の波長の光を放出する第１の
蛍光体と、前記発光素子から放出される１次光を吸収し
て前記１次光とは異なる第２の波長の光を放出する第２
の蛍光体と、を備えた半導体発光装置であって、前記第
１の蛍光体は、前記発光素子の光放出面の第１の領域の
上に設けられ、前記第２の蛍光体は、前記発光素子の光
放出面の前記第１の領域とは異なる第２の領域の上に設
けられていることを特徴とする。Alternatively, a semiconductor light emitting device according to the present invention includes a light emitting element and a first light emitting element that absorbs primary light emitted from the light emitting element and emits light having a first wavelength different from the primary light. A second phosphor that absorbs primary light emitted from the phosphor and emits light of a second wavelength different from the primary light;
A light emitting device, wherein the first phosphor is provided on a first region of a light emitting surface of the light emitting element, and the second phosphor is The light-emitting element is provided on a second area different from the first area on a light-emitting surface of the light-emitting element.

【００１７】[0017]

【発明の実施の形態】以下、図面を参照しつつ本発明の
実施の形態について説明する。Embodiments of the present invention will be described below with reference to the drawings.

【００１８】図１は、本発明の第１の実施の形態にかか
る半導体発光装置の要部構成を表す概略断面図である。
同図において、１１はＬＥＤチップであり、１２はその
ＬＥＤをマウントするリードフレームである。１３は赤
色（Ｒ）蛍光体、１４は緑色（Ｇ）蛍光体、１５は青色
（Ｂ）蛍光体であり、ＬＥＤ１１からの光を吸収してそ
れぞれの波長帯の２次光を放出するものである。１６，
１７はＬＥＤに駆動電流を供給するためのワイアであ
り、それぞれＬＥＤの電極とリードフレームのリード部
にボンディングされている。FIG. 1 is a schematic cross-sectional view showing a main configuration of a semiconductor light emitting device according to a first embodiment of the present invention.
In the figure, 11 is an LED chip, and 12 is a lead frame for mounting the LED. 13 is a red (R) phosphor, 14 is a green (G) phosphor, and 15 is a blue (B) phosphor, which absorbs light from the LED 11 and emits secondary light of each wavelength band. is there. 16,
Reference numeral 17 denotes wires for supplying a drive current to the LEDs, which are respectively bonded to the electrodes of the LEDs and the leads of the lead frame.

【００１９】本発明の半導体発光装置が従来例と異なる
点は、リードフレーム１２に凹部１２Ａが設けられ、Ｌ
ＥＤチップ１１がこの凹部１２Ａの内部に埋め込む形で
マウントされている点にある。本発明によれば、ＬＥＤ
１１による段差が発生しないため、ＬＥＤの周囲の蛍光
体の塗布厚を一定にすることができる。その結果とし
て、蛍光体の偏析の状態を均一にすることができ、図９
に関して前述したような発光の「むら」を解消すること
ができる。The semiconductor light emitting device of the present invention is different from the conventional example in that a lead frame 12 is provided with a concave portion 12A,
The ED chip 11 is mounted so as to be embedded in the recess 12A. According to the present invention, an LED
Since the step due to 11 does not occur, the coating thickness of the phosphor around the LED can be made constant. As a result, the state of segregation of the phosphor can be made uniform, and FIG.
As described above, the “unevenness” of light emission can be eliminated.

【００２０】また、本実施形態においては、ＲＧＢ蛍光
体のそれぞれを層状に形成している。すなわち、第１層
としてＲ蛍光体１３からなる層が設けられ、第２層とし
てＧ蛍光体１４からなる層が設けられ、第３層としてＢ
蛍光体１５からなる層が設けられている。本発明によれ
ば、ＬＥＤ１１の周囲において、蛍光体の塗布厚を均一
にすることができるので、このような３層構造も確実且
つ容易に実現することができる。In this embodiment, each of the RGB phosphors is formed in a layer. That is, a layer made of the R phosphor 13 is provided as the first layer, a layer made of the G phosphor 14 is provided as the second layer, and a B layer is provided as the third layer.
A layer made of the phosphor 15 is provided. According to the present invention, the coating thickness of the phosphor can be made uniform around the LED 11, so that such a three-layer structure can be realized reliably and easily.

【００２１】図１の半導体発光装置の製造方法は以下の
如くである。すなわち、ＬＥＤチップ１１をフレーム１
２にマウントした後に、Ｒ蛍光体１３を含んだ樹脂を塗
布して硬化させ、次にＧ蛍光体１４を含んだ樹脂を塗布
して硬化させ、次にＢ蛍光体１５を含んだ樹脂を塗布し
て硬化させて作成する。ここで、塗布する蛍光体の量や
順序については、それぞれの蛍光体の変換効率や塗布領
域内部での散乱を考慮して適宜決定することができる。The method for manufacturing the semiconductor light emitting device shown in FIG. 1 is as follows. That is, the LED chip 11 is connected to the frame 1
2, the resin containing the R phosphor 13 is applied and cured, then the resin containing the G phosphor 14 is applied and cured, and then the resin containing the B phosphor 15 is applied. And harden it to make it. Here, the amount and order of the phosphors to be applied can be appropriately determined in consideration of the conversion efficiency of each phosphor and scattering inside the application area.

【００２２】ここで、ＬＥＤ１１の平面形状は通常、一
辺が４００〜５００μｍの正方形状であるが、リードフ
レームの加工精度や、ＬＥＤ１１をマウントする際の誤
差などを考慮すると、リードフレーム１２の凹部１２Ａ
の開口寸法は、ＬＥＤ１１の寸法の一割増し、４０〜５
０μｍ程度大きめに形成することが望ましい。この場合
には、ＬＥＤの両側に隙間が生ずるが、この程度の寸法
であれば、塗布むらによる悪影響が生ずる心配はない。Here, the planar shape of the LED 11 is usually a square having a side of 400 to 500 μm, but in consideration of the processing accuracy of the lead frame and the error in mounting the LED 11, the concave portion 12A of the lead frame 12 is taken into consideration.
Opening size is 40% to 5% of the size of the LED 11
It is desirable to form it larger by about 0 μm. In this case, a gap is formed on both sides of the LED. However, with such a size, there is no fear that adverse effects due to uneven coating may occur.

【００２３】かくして得られた半導体発光装置に、ワイ
ア１６、１７を介してバイアス電流を供給したところ、
ＬＥＤの上方からみて色斑の無い均一な白色発光が得ら
れた。また本半導体発光装置では指向角に対する色純度
も良く、この点でも従来構造の装置よりも優れているこ
とが分かった。When a bias current was supplied to the thus obtained semiconductor light emitting device via wires 16 and 17,
When viewed from above the LED, uniform white light emission without color spots was obtained. In addition, the present semiconductor light emitting device has good color purity with respect to the directional angle, and also in this respect, it is found that the device is superior to the device having the conventional structure.

【００２４】図２は、図１の半導体発光装置に搭載され
るＬＥＤの構成を例示する概略断面図である。図中３０
１はサファイア基板、３０２はｎ型ＧａＮコンタクト
層、３０３はｎ型ＡｌＧａＮクラッド層、３０４はＩｎ
ＧａＮ活性層、３０５はｐ型ＡｌＧａＮクラッド層、３
０６はｐ型ＧａＮコンタクト層、３０７はｐ側電極、３
０８はｎ側電極である。図２のＬＥＤは、青色から紫外
線領域の波長帯において極めて高い強度の発光を得るこ
とができるので、蛍光体と組み合わせて用いるのに好適
である。FIG. 2 is a schematic sectional view illustrating the configuration of an LED mounted on the semiconductor light emitting device of FIG. 30 in the figure
1 is a sapphire substrate, 302 is an n-type GaN contact layer, 303 is an n-type AlGaN cladding layer, and 304 is In.
GaN active layer, 305 is a p-type AlGaN cladding layer, 3
06 is a p-type GaN contact layer, 307 is a p-side electrode, 3
08 is an n-side electrode. The LED of FIG. 2 can emit light of extremely high intensity in a wavelength band from blue to ultraviolet, and thus is suitable for use in combination with a phosphor.

【００２５】なお、図示したＬＥＤは、ｎ側電極３０８
の形成面とｐ側電極３０７の形成面との間に段差部を有
するが、この段差の高さはせいぜい数μｍ以下に過ぎ
ず、蛍光体の偏析状態に影響を与えることはない。The illustrated LED has an n-side electrode 308.
Has a step between the surface on which is formed and the surface on which the p-side electrode 307 is formed, but the height of this step is at most only a few μm or less, and does not affect the segregation state of the phosphor.

【００２６】本発明において用いることができる発光素
子は、蛍光体を励起するのに十分な特性（発光波長、発
光強度など）を有すれば良く、図２のＬＥＤに限られる
ものではない。積層構造および材料を適宜種々変形して
作成可能である。例えば、基板３０１はサファイアに限
定されず、その他にも、例えば、スピネル、ＭｇＯ、Ｓ
ｃＡｌＭｇＯ4、ＬａＳｒＧａＯ4、（ＬａＳｒ）（Ａｌ
Ｔａ）Ｏ3などの絶縁性基板や、ＳｉＣＳｉ、ＧａＡ
ｓ、ＧａＮなどの導電性基板も同様に用いてそれぞれの
効果を得ることができる。ここで、ＳｃＡｌＭｇＯ4基
板の場合には、（０００１）面、（ＬａＳｒ）（ＡｌＴ
ａ）Ｏ3基板の場合には（１１１）面を用いることが望
ましい。The light emitting element that can be used in the present invention only needs to have characteristics (emission wavelength, emission intensity, etc.) sufficient to excite the phosphor, and is not limited to the LED of FIG. The laminate structure and the material can be modified in various ways as appropriate. For example, the substrate 301 is not limited to sapphire. In addition, for example, spinel, MgO, S
cAlMgO 4 , LaSrGaO 4 , (LaSr) (Al
Ta) an insulating substrate such as O 3 , SiCSi, GaAs
Each effect can be obtained by using a conductive substrate such as s and GaN in the same manner. Here, in the case of a ScAlMgO 4 substrate, the (0001) plane, (LaSr) (AlT
a) In the case of an O 3 substrate, it is desirable to use the (111) plane.

【００２７】また、窒化物半導体として用いることがで
きる材料しては、ＢxＩｎyＡｌzＧａ(1-x-y-z)Ｎ（Ｏ≦
ｘ≦１、Ｏ≦ｙ≦１、Ｏ≦ｚ≦１）なる化学式で表され
るあらゆる組成のIII−Ｖ族化合物半導体を挙げること
ができ、さらに、Ｖ族元素としては、Ｎに加えてリン
（Ｐ）や砒素（Ａｓ）などを含有する混晶も含むもので
も良い。さらに、これらの窒化物半導体以外のIII−Ｖ
族化合物半導体、II−ＶI族化合物半導体、或いはＳｉ
Ｃなども同様に用いることができる。The material that can be used as the nitride semiconductor is B x In y Al z Ga (1-xyz) N (O ≦
x ≦ 1, O ≦ y ≦ 1, O ≦ z ≦ 1) Group III-V compound semiconductors of any composition represented by the chemical formulas can be cited. A mixed crystal containing (P) or arsenic (As) may be included. Further, III-V other than these nitride semiconductors
Group semiconductor, II-VI compound semiconductor, or Si
C and the like can be similarly used.

【００２８】次に、本発明の第２の実施の形態について
説明する。図３は、本発明の第２の実施の形態にかかる
半導体発光装置を表す概略断面図である。同図において
は、図１と同様の部分については同一の符号を付した。
本実施形態の半導体発光装置は、ＲＧＢ蛍光体１３〜１
５を樹脂に一緒に混合して塗布、硬化させた点で第１実
施形態と異なる。すなわち、本実施形態においては、蛍
光体１３〜１５が、ランダムに混合されている。Next, a second embodiment of the present invention will be described. FIG. 3 is a schematic sectional view illustrating a semiconductor light emitting device according to a second embodiment of the present invention. In the figure, the same parts as those in FIG. 1 are denoted by the same reference numerals.
The semiconductor light emitting device according to the present embodiment includes the RGB phosphors 13 to 1.
5 is different from that of the first embodiment in that it is mixed with resin and applied and cured. That is, in the present embodiment, the phosphors 13 to 15 are randomly mixed.

【００２９】図９に関して前述したように、従来の半導
体発光装置では、ＬＥＤによる段差の存在により、発光
の「むら」が多く発生してしまったのに対して、本実施
形態によればＬＥＤ１１をリードフレーム１２に埋め込
んで段差を実質的になくしているために、蛍光体をラン
ダムに混合した場合においても発光の「むら」を解消で
きる。このように蛍光体をランダムに混合する場合は、
図１に例示したように層状に塗布するよりも容易に製造
することができる。As described above with reference to FIG. 9, in the conventional semiconductor light emitting device, the unevenness of the light emission often occurs due to the presence of the step due to the LED. Since the steps are substantially eliminated by being embedded in the lead frame 12, "unevenness" of light emission can be eliminated even when phosphors are mixed at random. If the phosphors are randomly mixed in this way,
It can be manufactured more easily than the application in a layer as illustrated in FIG.

【００３０】かくして得られた半導体発光装置にバイア
ス電流を供給したところ、ＬＥＤ１１の上方から観察し
て色斑の無い均一な白色発光が得られた。つまり、本発
明によれば、従来と同様にＲＧＢ蛍光体を混合して塗布
しても発光「むら」の無い均一な発光を得ることができ
る。また、本装置では指向角に対する色純度も良く、こ
の点でも従来構造の装置よりも優れていることがわかっ
た。When a bias current was supplied to the semiconductor light emitting device thus obtained, uniform white light emission without color spots was observed when observed from above the LED 11. That is, according to the present invention, even if the RGB phosphors are mixed and applied in the same manner as in the related art, it is possible to obtain uniform light emission without emission unevenness. In addition, it was found that the present device has good color purity with respect to the directional angle, and in this respect also is superior to the device having the conventional structure.

【００３１】次に、本発明の第３の実施の形態について
説明する。図４は、本発明の第３の実施の形態にかかる
半導体発光装置を表す概略断面図である。本実施形態の
半導体発光装置は、発光素子をマウントする実装部材と
して、前述したリードフレームの代わりに基板２２が用
いられている点が異なる。すなわち、基板２２には凹状
のカップ部が形成され、その底面には凹部２２Ａが設け
られている。ＬＥＤ１１は、この凹部２２Ａに埋め込ま
れるようにマウントされ、ワイア１６、１７により配線
されている。Next, a third embodiment of the present invention will be described. FIG. 4 is a schematic sectional view illustrating a semiconductor light emitting device according to a third embodiment of the present invention. The semiconductor light emitting device of this embodiment is different in that a substrate 22 is used instead of the above-described lead frame as a mounting member for mounting a light emitting element. That is, a concave cup portion is formed on the substrate 22, and a concave portion 22A is provided on the bottom surface thereof. The LED 11 is mounted so as to be embedded in the recess 22 </ b> A, and wired by wires 16 and 17.

【００３２】そして、実質的に平坦な面とされたカップ
部の底面とＬＥＤ１１の上面とに蛍光体１３〜１５が塗
布されている。The phosphors 13 to 15 are applied to the bottom surface of the cup portion, which is a substantially flat surface, and the upper surface of the LED 11.

【００３３】本実施形態においても、蛍光体の塗布面は
段差を有せず、実質的に平坦な面とされているので、図
９に関して前述したような偏析状態のむらが生ずること
はない。その結果として、均一な発光を得ることができ
る。Also in this embodiment, since the phosphor-coated surface has no step and is a substantially flat surface, unevenness of the segregation state as described above with reference to FIG. 9 does not occur. As a result, uniform light emission can be obtained.

【００３４】なお、図４においては、ＲＧＢ蛍光体１３
〜１５を一緒に混合してランダムに塗布した例を表した
が、図１に例示したように、各蛍光体１３〜１５を層状
に塗布しても良い。It should be noted that, in FIG.
Although an example in which the phosphors 13 to 15 are mixed together and applied at random is shown, the phosphors 13 to 15 may be applied in layers as illustrated in FIG.

【００３５】次に、本発明の第４の実施の形態について
説明する。図５は、本発明の第４の実施の形態にかかる
半導体発光装置を表す概略断面図である。本実施形態の
半導体発光装置も、前述した第３実施形態と同様に基板
２２にＬＥＤ１１がマウントされている。しかし、本実
施形態においては、基板２２のカップ部が樹脂２５によ
り埋め込まれている点が異なる。すなわち、基板２２に
は凹状のカップ部が形成され、その底面には凹部２２Ａ
が設けられている。このカップ部は、樹脂２５により埋
め込まれ、この樹脂２５の表面に蛍光体１３〜１５が塗
布されている。Next, a fourth embodiment of the present invention will be described. FIG. 5 is a schematic sectional view illustrating a semiconductor light emitting device according to a fourth embodiment of the present invention. Also in the semiconductor light emitting device of the present embodiment, the LED 11 is mounted on the substrate 22 similarly to the third embodiment described above. However, the present embodiment is different in that the cup portion of the substrate 22 is embedded with the resin 25. That is, a concave cup portion is formed on the substrate 22, and the concave portion 22A is formed on the bottom surface thereof.
Is provided. This cup portion is embedded with a resin 25, and phosphors 13 to 15 are applied to the surface of the resin 25.

【００３６】本実施形態においても、蛍光体の塗布面す
なわち樹脂２５の表面は段差を有せず、実質的に平坦な
面とされているので、図９に関して前述したような偏析
状態のむらが生ずることはない。その結果として、均一
な発光を得ることができる。また、本実施形態によれ
ば、ＬＥＤ１１が樹脂２５により封止されているので、
水分や各種の腐食性雰囲気の侵入によるＬＥＤの劣化や
故障を防ぐことができる。その結果として、半導体発光
装置の信頼性を向上することができる。Also in this embodiment, since the surface on which the phosphor is applied, that is, the surface of the resin 25, has no step and is substantially flat, unevenness in the segregation state as described above with reference to FIG. 9 occurs. Never. As a result, uniform light emission can be obtained. Further, according to the present embodiment, since the LED 11 is sealed with the resin 25,
It is possible to prevent the LED from deteriorating or malfunctioning due to invasion of moisture or various corrosive atmospheres. As a result, the reliability of the semiconductor light emitting device can be improved.

【００３７】なお、図５においては、ＲＧＢ蛍光体１３
〜１５を一緒に混合してランダムに塗布した例を表した
が、図１に例示したように、各蛍光体１３〜１５を層状
に塗布しても良い。また、図５においては、ＬＥＤ１１
を基板２２に埋込みマウントした例を示したが、本実施
形態はこれに限定されず、基板２２に凹部２２Ａを形成
せずに、カップ部底面の平坦なマウント面にＬＥＤ１１
をマウントしても良い。In FIG. 5, the RGB phosphor 13
Although an example in which the phosphors 13 to 15 are mixed together and applied at random is shown, the phosphors 13 to 15 may be applied in layers as illustrated in FIG. Also, in FIG.
In this embodiment, the LED 11 is mounted on the flat mounting surface on the bottom surface of the cup without forming the recess 22A in the substrate 22.
May be mounted.

【００３８】次に、本発明の第５の実施の形態について
説明する。図６は、本発明の第５の実施の形態にかかる
半導体発光装置を表す概略断面図である。同図において
も、前述した第１実施形態及び第２実施形態と同様の構
造部分については同一の符号を付した。図中３０は、Ｌ
ＥＤ１１から放出される１次光に対して透明な樹脂によ
り形成されたレンズである。Next, a fifth embodiment of the present invention will be described. FIG. 6 is a schematic sectional view illustrating a semiconductor light emitting device according to a fifth embodiment of the present invention. Also in the figure, the same reference numerals are given to the same structural parts as those in the first embodiment and the second embodiment described above. 30 in the figure is L
This is a lens formed of a resin transparent to primary light emitted from the ED 11.

【００３９】本実施形態においては、ＬＥＤ１１をリー
ドフレーム１２上に埋め込みマウントした後に透明樹脂
のレンズ３０を形成し、その表面にＲＧＢ蛍光体を塗布
した点に特徴を有する。レンズ３０の表面は段差を有し
ないので、蛍光体を塗布した場合に、図９に関して前述
したような偏析状態のむらが生ずることはない。その結
果として、均一な発光を得ることができる。The present embodiment is characterized in that a transparent resin lens 30 is formed after the LED 11 is embedded and mounted on the lead frame 12, and an RGB phosphor is applied to the surface thereof. Since the surface of the lens 30 does not have a step, when the phosphor is applied, unevenness of the segregation state as described above with reference to FIG. 9 does not occur. As a result, uniform light emission can be obtained.

【００４０】さらに、本実施形態によれば、レンズ３０
を設けたことによりさらに指向角が広くなり、表示用や
照明等の用途に広く適用することが可能となる。また、
図６にはリードフレームを用いた場合の構造を例示した
が、平面基板上へのマウントによって集積化すればその
用途は格段に広がり本発明の利点をさらに引き出すこと
ができる。Further, according to the present embodiment, the lens 30
Is provided, the directivity angle is further widened, and it can be widely applied to uses such as display and illumination. Also,
FIG. 6 shows an example of a structure using a lead frame. However, if the structure is integrated by mounting on a flat substrate, the application will be greatly expanded and the advantages of the present invention can be further obtained.

【００４１】なお、図６においては、ＬＥＤ１１をリー
ドフレーム１２に埋込みマウントした例を示したが、本
実施形態はこれに限定されず、リードフレーム１２に凹
部を形成せずに、平坦なマウント面にＬＥＤ１１をマウ
ントしても良い。Although FIG. 6 shows an example in which the LED 11 is embedded and mounted in the lead frame 12, the present embodiment is not limited to this, and a flat mounting surface is formed without forming a recess in the lead frame 12. The LED 11 may be mounted on the LED.

【００４２】また、蛍光体１３〜１５も、図６に示した
ように層状に塗布せずに、溶媒中にＲＧＢ蛍光体１３〜
１５を一緒に混合してランダムになるように塗布しても
良い。Also, as shown in FIG. 6, the phosphors 13 to 15 are not applied in a layer form, but are coated in a solvent in the RGB phosphors 13 to 15.
15 may be mixed together and applied randomly.

【００４３】次に、本発明の第６の実施の形態について
説明する。図７は、本発明の第６の実施の形態にかかる
半導体発光装置を表す概略断面図である。同図において
も、前述した第１、第２実施形態と同様の部分について
は、同一の符号を付した。図中６０は発光部が３つの領
域に分かれたＬＥＤである。本実施形態は、ＬＥＤ６０
の３分割された発光領域のそれぞれの上部にＲＧＢ蛍光
体１３〜１５を分けて塗布した点に特徴を有する。つま
り、ＬＥＤ６０は、遮光板６２によって、３つの領域に
分割され、それぞれの領域にＲＧＢ蛍光体１３〜１５の
いずれかが塗布されている。塗布されたそれぞれの蛍光
体は、ＬＥＤ６０からの１次光を吸収して、それぞれの
発光波長の２次光を放出する。Next, a sixth embodiment of the present invention will be described. FIG. 7 is a schematic sectional view illustrating a semiconductor light emitting device according to a sixth embodiment of the present invention. In this figure, the same reference numerals are given to the same parts as those in the first and second embodiments. In the figure, reference numeral 60 denotes an LED in which the light emitting unit is divided into three regions. In the present embodiment, the LED 60
It is characterized in that RGB phosphors 13 to 15 are separately applied to the upper portions of the three divided light emitting regions. That is, the LED 60 is divided into three regions by the light shielding plate 62, and one of the RGB phosphors 13 to 15 is applied to each region. Each applied phosphor absorbs primary light from the LED 60 and emits secondary light of each emission wavelength.

【００４４】本実施形態によれば、１つの半導体発光装
置においてＲＧＢそれぞれの発光を別々に取り出すこと
が可能となり、または、それらの混合色も自由に表現で
きるようになる。According to the present embodiment, it is possible to separately extract the RGB light emission in one semiconductor light emitting device, or to freely express a mixed color thereof.

【００４５】図８は、第６の実施形態において用いるこ
とができるＬＥＤを表す概略断面図である。同図におい
ては、前述した図３と同様の構造部分については同一の
符号を付した。図中７０１は、ｎ型ＧａＮ基板である。
この導電性基板上へ素子を作成することによってＬＥＤ
の上下面に電極をそれぞれ形成することができる。発光
領域の分離は、ｐ型ＧａＮコンタクト層３０６からｎ型
ＧａＮ層３０２まで貫通するようにエッチングすること
により行う。その後、ｐ型ＧａＮコンタクト層３０６の
上にｐ側電極３０７を形成し、ｎ型ＧａＮ基板７０１の
裏面には共通のｎ側電極３０８を作成して、本素子が完
成する。FIG. 8 is a schematic sectional view showing an LED which can be used in the sixth embodiment. In the figure, the same reference numerals are given to the same structural parts as those in FIG. 3 described above. In the figure, reference numeral 701 denotes an n-type GaN substrate.
By forming an element on this conductive substrate, the LED
Electrodes can be respectively formed on the upper and lower surfaces of the substrate. The light emitting region is separated by etching so as to penetrate from the p-type GaN contact layer 306 to the n-type GaN layer 302. Thereafter, a p-side electrode 307 is formed on the p-type GaN contact layer 306, and a common n-side electrode 308 is formed on the back surface of the n-type GaN substrate 701, whereby the device is completed.

【００４６】なお、図７の半導体発光装置においては、
遮光板６２を設けることにより、隣接する他の領域から
の蛍光体の励起を防いでいる。図示した以外にも、発光
領域同士の間隔を広くしたり、励起光に対して吸収する
ような材質あるいは吸収材を含んだ樹脂を用いて蛍光体
を分離するようにしても良い。本実施形態においても、
色斑のない均一な発光を得ることができる。In the semiconductor light emitting device shown in FIG.
By providing the light shielding plate 62, excitation of the phosphor from another adjacent region is prevented. In addition to the illustration, the phosphor may be separated using a material that absorbs the excitation light or a resin containing an absorbing material by increasing the interval between the light emitting regions. Also in this embodiment,
Uniform light emission without color spots can be obtained.

【００４７】以上、具体例を参照しつつ本発明の実施の
形態について説明した。しかし、本発明のこれらの具体
例に限定されるものではない。例えば、各実施形態で用
いた発光素子は、窒化物半導体を用いたＬＥＤ以外に
も、蛍光体の励起のために十分な波長と発光強度を有す
る他の材料系の発光素子でもよい。また、各実施形態に
おいては蛍光体としてＲＧＢの３種の蛍光体を用いた場
合を例示したが、種類の異なる２種類以上の組み合わせ
において本発明は有効である。例えば、青色の２次光を
放出する蛍光体と黄色の２次光を放出する蛍光体とを組
み合わせて白色光を得る場合においても本発明を同様に
適用して同様の効果を得ることができる。その他本発明
の要旨を逸脱しない範囲で種々変形して実施可能であ
る。The embodiment of the invention has been described with reference to examples. However, the present invention is not limited to these specific examples. For example, the light emitting device used in each embodiment may be a light emitting device of another material type having a sufficient wavelength and emission intensity for exciting the phosphor, in addition to the LED using the nitride semiconductor. Further, in each embodiment, the case where three kinds of phosphors of RGB are used as the phosphors is exemplified, but the present invention is effective in a combination of two or more kinds of different kinds. For example, in the case where white light is obtained by combining a phosphor that emits blue secondary light and a phosphor that emits yellow secondary light, similar effects can be obtained by applying the present invention in the same manner. . In addition, various modifications can be made without departing from the scope of the present invention.

【００４８】[0048]

【発明の効果】本発明によれば、リードフレームなどの
実装部材に対して、ＬＥＤなどの発光素子を埋め込まれ
た形でマウントすることにより、蛍光体の塗布面を実質
的に平坦な面とし、この平坦面に蛍光体を塗布すること
により、塗布厚を均一にし、蛍光体粒子の比重や粒径の
違いにより発生する偏析の状態を均一にすることによっ
て、発光の「むら」を解消することができる。According to the present invention, a light-emitting element such as an LED is mounted on a mounting member such as a lead frame in a buried manner, so that the phosphor-coated surface is made substantially flat. By applying a phosphor on this flat surface, the coating thickness is made uniform, and the state of segregation generated due to the difference in specific gravity and particle size of the phosphor particles is eliminated, thereby eliminating "unevenness" of light emission. be able to.

【００４９】また、本発明によれば、半導体発光装置の
色純度を高めることができ、さらに、色純度の指向性も
向上させることができる。Further, according to the present invention, the color purity of the semiconductor light emitting device can be increased, and the directivity of the color purity can be improved.

【００５０】さらに、本発明によれば、単一の蛍光体を
用いる場合にも、偏析状態を均一にすることにより、２
次光の強度むらを解消して均一な発光を得ることができ
るという効果が得られる。Further, according to the present invention, even when a single phosphor is used, by making the segregation state uniform,
The effect of eliminating the unevenness in the intensity of the next light and obtaining uniform light emission can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の第１の実施の形態にかかる半導体発光
装置の要部構成を表す概略断面図である。FIG. 1 is a schematic cross-sectional view illustrating a configuration of a main part of a semiconductor light emitting device according to a first embodiment of the present invention.

【図２】図１の半導体発光装置に搭載されるＬＥＤの構
成を例示する概略断面図である。FIG. 2 is a schematic sectional view illustrating the configuration of an LED mounted on the semiconductor light emitting device of FIG. 1;

【図３】本発明の第２の実施の形態にかかる半導体発光
装置を表す概略断面図である。FIG. 3 is a schematic sectional view illustrating a semiconductor light emitting device according to a second embodiment of the present invention.

【図４】本発明の第３の実施の形態にかかる半導体発光
装置を表す概略断面図である。FIG. 4 is a schematic sectional view illustrating a semiconductor light emitting device according to a third embodiment of the present invention.

【図５】本発明の第４の実施の形態にかかる半導体発光
装置を表す概略断面図である。FIG. 5 is a schematic sectional view illustrating a semiconductor light emitting device according to a fourth embodiment of the present invention.

【図６】本発明の第５の実施の形態にかかる半導体発光
装置を表す概略断面図である。FIG. 6 is a schematic sectional view illustrating a semiconductor light emitting device according to a fifth embodiment of the present invention.

【図７】本発明の第６の実施の形態にかかる半導体発光
装置を表す概略断面図である。FIG. 7 is a schematic sectional view illustrating a semiconductor light emitting device according to a sixth embodiment of the present invention.

【図８】第６の実施形態において用いることができるＬ
ＥＤを表す概略断面図である。FIG. 8 shows L that can be used in the sixth embodiment.
It is a schematic sectional drawing showing ED.

【図９】従来の半導体発光装置の概略構成を表す断面図
である。FIG. 9 is a cross-sectional view illustrating a schematic configuration of a conventional semiconductor light emitting device.

【符号の説明】[Explanation of symbols]

１１、６０、１０１ ＬＥＤチップ １２、１０２ リードフレーム １３、１１１ 赤色（Ｒ）蛍光体 １４、１１２ 緑色（Ｇ）蛍光体 １５、１１３ 青色（Ｂ）蛍光体 １６、１０６ ｎ側金ワイヤ １７、１０７ ｐ側金ワイヤ ２２ 基板 ２５ 樹脂 ３０ レンズ ６２ 遮光板 ３０１ サファイア基板 ３０２ ｎ型ＧａＮコンタクト層 ３０３ ｎ型ＡｌＧａＮクラッド層 ３０４ ＩｎＧａＮ活性層 ３０５ ｐ型ＡｌＧａＮクラッド層 ３０６ ｐ型ＧａＮコンタクト層 ３０７ ｐ側電極 ３０８ ｎ側電極 ７０１ ＧａＮ基板 11, 60, 101 LED chip 12, 102 Lead frame 13, 111 Red (R) phosphor 14, 112 Green (G) phosphor 15, 113 Blue (B) phosphor 16, 106 n-side gold wire 17, 107 p Side metal wire 22 Substrate 25 Resin 30 Lens 62 Light shield plate 301 Sapphire substrate 302 n-type GaN contact layer 303 n-type AlGaN cladding layer 304 InGaN active layer 305 p-type AlGaN cladding layer 306 p-type GaN contact layer 307 p-side electrode 308 n-side Electrode 701 GaN substrate

フロントページの続き (72)発明者 古 川 千 里 神奈川県川崎市川崎区日進町７番地１ 東 芝電子エンジニアリング株式会社内 Ｆターム(参考） 5F041 AA11 AA12 EE25 Continued on the front page (72) Inventor Chisato Furukawa 7-1 Nisshincho, Kawasaki-ku, Kawasaki-shi, Kanagawa Prefecture F-term in Toshiba Electronics Engineering Co., Ltd. 5F041 AA11 AA12 EE25

Claims (5)

【特許請求の範囲】[Claims] 【請求項１】実装部材と、前記実装部材にマウントされ
た発光素子と、前記発光素子から放出される１次光を吸
収して前記１次光とは異なる波長を有する２次光を放出
する蛍光体と、を備えた半導体発光装置であって、 前記蛍光体は、実質的に平坦な面の上において一定の厚
みを有するように形成されていることを特徴とする半導
体発光装置。1. A mounting member, a light emitting element mounted on the mounting member, and primary light emitted from the light emitting element is absorbed to emit secondary light having a wavelength different from the primary light. And a phosphor, wherein the phosphor is formed to have a constant thickness on a substantially flat surface. 【請求項２】実装部材と、前記実装部材にマウントされ
た発光素子と、前記発光素子から放出される１次光を吸
収して前記１次光とは異なる波長を有する２次光を放出
する蛍光体と、を備えた半導体発光装置であって、 前記実装部材は、前記蛍光体が塗布される主面に凹部を
有し、 前記発光素子は、前記実装部材の前記凹部に埋め込まれ
るようにマウントされ、 前記実装部材の前記主面と前記発光素子の上面とは、実
質的に同一の平面内に設けられることにより実質的に平
坦な塗布面を構成し、 前記蛍光体は、前記塗布面に一定の厚みを有するように
塗布されていることを特徴とする半導体発光装置。2. A mounting member, a light emitting element mounted on the mounting member, and primary light emitted from the light emitting element is absorbed to emit secondary light having a wavelength different from the primary light. A phosphor, wherein the mounting member has a concave portion on a main surface to which the phosphor is applied, and the light emitting element is embedded in the concave portion of the mounting member. The main surface of the mounting member and the upper surface of the light emitting element are mounted in substantially the same plane to form a substantially flat coating surface, and the phosphor is the coating surface. A semiconductor light-emitting device, wherein the semiconductor light-emitting device is applied so as to have a constant thickness. 【請求項３】前記蛍光体は、互いに比重が異なる２種類
以上の蛍光体を含むことを特徴とする請求項１または２
に記載の半導体発光装置。3. The phosphor according to claim 1, wherein the phosphor includes two or more phosphors having different specific gravities.
The semiconductor light emitting device according to claim 1. 【請求項４】前記２種類以上の蛍光体は、それぞれの種
類毎に層状に形成されて積層されていることを特徴とす
る請求項３記載の半導体発光装置。4. The semiconductor light emitting device according to claim 3, wherein said two or more types of phosphors are formed in layers for each type and laminated. 【請求項５】発光素子と、前記発光素子から放出される
１次光を吸収して前記１次光とは異なる第１の波長の光
を放出する第１の蛍光体と、前記発光素子から放出され
る１次光を吸収して前記１次光とは異なる第２の波長の
光を放出する第２の蛍光体と、 を備えた半導体発光装置であって、 前記第１の蛍光体は、前記発光素子の光放出面の第１の
領域の上に設けられ、 前記第２の蛍光体は、前記発光素子の光放出面の前記第
１の領域とは異なる第２の領域の上に設けられているこ
とを特徴とする半導体発光装置。5. A light emitting device, a first phosphor that absorbs primary light emitted from the light emitting device and emits light of a first wavelength different from the primary light, and A second phosphor that absorbs the emitted primary light and emits light of a second wavelength different from the primary light, wherein the first phosphor is , Provided on a first area of a light emitting surface of the light emitting element, wherein the second phosphor is provided on a second area different from the first area of the light emitting surface of the light emitting element. A semiconductor light emitting device provided.
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