JP2000058723A - Circuit board - Google Patents
Circuit boardInfo
- Publication number
- JP2000058723A JP2000058723A JP22790298A JP22790298A JP2000058723A JP 2000058723 A JP2000058723 A JP 2000058723A JP 22790298 A JP22790298 A JP 22790298A JP 22790298 A JP22790298 A JP 22790298A JP 2000058723 A JP2000058723 A JP 2000058723A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- copper plate
- heat
- circuit
- circuit board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Structure Of Printed Boards (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、セラミックス基板
に銅回路と放熱銅板とが設けられてなる回路基板の改良
に関するものであって、回路基板の信頼性を向上するこ
とを目的とするものである。本発明の回路基板は、電子
部品のパワーモジュール等の組立に好適なものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of a circuit board comprising a ceramic substrate provided with a copper circuit and a heat radiating copper plate, and an object thereof is to improve the reliability of the circuit board. is there. The circuit board of the present invention is suitable for assembling a power module or the like of electronic components.
【0002】[0002]
【従来の技術】近年、ロボットやモーター等の産業機器
の高性能化に伴い、大電力・高能率インバーター等パワ
ーモジュールの変遷が進んでおり、半導体素子から発生
する熱も増加の一途をたどっている。この熱を効率よく
放散させるため、パワーモジュール基板では従来より様
々な方法が取られてきた。特に最近、良好な熱伝導を有
するセラミックス基板が利用できるようになったため、
その基板上に銅板等の金属板を接合し、回路を形成後、
そのままあるいはNiメッキ等の処理を施してから半導
体素子を実装する構造も採用されつつある。2. Description of the Related Art In recent years, power modules such as high-power and high-efficiency inverters have been changing with the advancement of the performance of industrial equipment such as robots and motors, and the heat generated from semiconductor devices has been increasing steadily. I have. In order to efficiently dissipate this heat, various methods have conventionally been used for power module substrates. Especially recently, ceramic substrates with good thermal conductivity have become available,
After joining a metal plate such as a copper plate on the board and forming a circuit,
A structure in which a semiconductor element is mounted as it is or after performing a process such as Ni plating has been adopted.
【0003】このようなモジュールは、当初、簡単な工
作機械に使用されてきたが、ここ数年、溶接機、電車の
駆動部、電気自動車に使用されるようになり、より厳し
い環境条件下における耐久性と更なる小型化が要求され
るようになってきた。そこで、セラミックス基板に対し
ても、電流密度を上げるための金属回路厚の増加、熱衝
撃等に対する耐久性の向上が要求され、セラミックス焼
結体の新たな製造研究により対応している。[0003] Such modules have initially been used in simple machine tools, but in recent years have been used in welding machines, train drives, electric vehicles and in more severe environmental conditions. Durability and further miniaturization have been required. Therefore, the ceramic substrate is required to have an increased metal circuit thickness for increasing the current density, and to have improved durability against thermal shock and the like.
【0004】[0004]
【発明が解決しようとする課題】従来、汎用されている
回路基板は、アルミナ基板又は窒化アルミニウム基板の
一方の面に銅回路、他方の面に放熱銅板を形成させてな
る構造のものである。このような回路基板は、銅とセラ
ミックスの熱膨張係数が異なるため、熱衝撃が繰り返し
受けるとセラミックスと銅との接合端面に熱応力がかか
り、銅回路又は放熱銅板が剥離したり、セラミックス基
板が割れたりするなどの問題がある。Conventionally, a generally used circuit board has a structure in which a copper circuit is formed on one surface of an alumina substrate or an aluminum nitride substrate and a heat-dissipating copper plate is formed on the other surface. In such a circuit board, since the thermal expansion coefficients of copper and ceramics are different, thermal stress is repeatedly applied to the joining end face of the ceramic and copper, so that the copper circuit or the heat-dissipating copper plate is peeled off, There are problems such as cracking.
【0005】この問題を解決する手段の一つとして、銅
回路と放熱銅板の厚みを変えて、熱サイクル時に熱応力
のかかる方向へ基板を反らせることにより、セラミック
ス基板のクラックや、銅回路又は放熱銅板の剥離に対す
る信頼性を向上させる方法がある。One of the means for solving this problem is to change the thickness of the copper circuit and the heat-dissipating copper plate and to warp the substrate in a direction in which thermal stress is applied during a thermal cycle, thereby causing cracks in the ceramic substrate, copper circuit or heat dissipation. There is a method for improving the reliability with respect to peeling of a copper plate.
【0006】しかし、銅回路と放熱銅板の厚みを変えた
場合、モジュール組立において回路基板とベース銅板と
を半田付けする際、回路基板の反りにより溶融した半田
が均一に塗れ拡がらないことから、半田ボイドが発生
し、熱サイクル時に半田クラックが生じやすくなるとい
う問題があった。However, when the thickness of the copper circuit and the thickness of the heat-dissipating copper plate are changed, when the circuit board and the base copper plate are soldered in module assembly, the molten solder due to the warpage of the circuit board is not uniformly applied and spread. There is a problem that solder voids are generated and solder cracks are easily generated during a heat cycle.
【0007】本発明は、上記に鑑みてなされたものであ
り、熱履歴を受けたときに発生する反りが小さい高信頼
性の回路基板を提供することを目的とするものである。[0007] The present invention has been made in view of the above, and an object of the present invention is to provide a highly reliable circuit board which is less warped when subjected to a thermal history.
【0008】[0008]
【課題を解決するための手段】すなわち、本発明は、セ
ラミックス基板の一方の面に銅回路、他方の面に放熱銅
板が、それぞれ活性金属成分を含むろう材を用いて接合
されてなるものにおいて、放熱銅板側の接合層の厚みが
銅回路側よりも10μm以上厚くなっていることを特徴
とする回路基板である。また、本発明は、上記回路基板
において、銅回路に対する放熱銅板の体積率が30〜9
0%であり、空気中で350℃×5分、25℃×5分を
1サイクルとする通炉試験を5回行った後のJIS B
0621に従う平面度が100μm以下であることを
特徴とする回路基板である。That is, the present invention relates to a ceramic substrate having a copper circuit on one side and a heat-dissipating copper plate on the other side, each of which is joined by using a brazing material containing an active metal component. A circuit board characterized in that the thickness of the bonding layer on the heat radiating copper plate side is 10 μm or more thicker than that of the copper circuit side. Also, the present invention provides the circuit board, wherein the volume ratio of the heat radiating copper plate to the copper circuit is 30 to 9;
JIS B after conducting a furnace test five times in one cycle of 350 ° C. × 5 minutes and 25 ° C. × 5 minutes in air.
A circuit board characterized in that the flatness according to No. 0621 is 100 μm or less.
【0009】[0009]
【発明の実施の形態】以下、更に詳しく本発明について
説明すると、回路基板は、モジュールを組み立てる際
に、Siチップ、ベース銅板の半田付け、シリコーンゲ
ル、エポキシ樹脂の硬化等によって、4〜5回程度の熱
履歴を受ける。熱処理の温度は、使用する半田の種類及
び前工程で使用された半田が溶融しないように調整さ
れ、最高で350℃程度となる。ここで、銅回路と放熱
銅板の体積が異なる場合、熱処理によって発生する熱応
力が異なるために回路基板に反りが生じ、溶融した半田
が均一に拡がらずに半田ボイドの原因となっている。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described in more detail below. A circuit board is assembled four to five times by assembling a module by soldering a silicon chip, a base copper plate, curing silicone gel, epoxy resin, and the like. Receive a degree of heat history. The temperature of the heat treatment is adjusted so that the type of solder to be used and the solder used in the previous process are not melted, and is about 350 ° C. at the maximum. Here, when the volume of the copper circuit is different from that of the heat-dissipating copper plate, the circuit board is warped due to the different thermal stresses generated by the heat treatment, and the molten solder is not spread evenly, causing solder voids.
【0010】このような半田ボイドを防ぐためには、銅
回路と放熱銅板の体積を等しくすればよいが、そうした
場合には発生する熱応力に耐えきれずセラミックス基板
にクラックが発生したり、銅回路が剥離してしまい、熱
サイクル時の信頼性が大きく低下する。In order to prevent such solder voids, the volume of the copper circuit and that of the heat-dissipating copper plate may be made equal. In such a case, cracks may occur in the ceramic substrate due to the inability to withstand the generated thermal stress, Is peeled off, and the reliability during a thermal cycle is greatly reduced.
【0011】そこで、銅回路と放熱銅板の体積が異なる
回路基板において、熱サイクル時の反りを低減させるた
めには、発生する熱応力差を小さくすればよい。本発明
者らは、セラミックス基板と銅板の接合時に形成される
接合層の厚みを銅回路よりも放熱銅板の方を10μm以
上厚くすることにより、発生する熱応力差を小さくする
ことができることを見いだした。Therefore, in a circuit board having a different volume between the copper circuit and the heat-dissipating copper plate, in order to reduce the warpage during the heat cycle, the difference in generated thermal stress may be reduced. The present inventors have found that by making the thickness of the bonding layer formed at the time of bonding the ceramic substrate and the copper plate 10 μm or more thicker on the heat-dissipating copper plate than on the copper circuit, it is possible to reduce the generated thermal stress difference. Was.
【0012】高純度の無酸素銅は、加熱処理すると柔ら
かくなり塑性変形しやすいが、これに対し、接合層は比
較的硬く、塑性変形しづらい。したがって、接合層を厚
みにより、回路基板全体の剛性は大きく変化する。[0012] High-purity oxygen-free copper becomes soft and easily plastically deformed by heat treatment, whereas the bonding layer is relatively hard and is hardly plastically deformed. Therefore, the rigidity of the entire circuit board greatly changes depending on the thickness of the bonding layer.
【0013】本発明において、銅回路側と放熱銅板側に
形成される接合層の厚みを変えるには、セラミックス基
板及び/又は銅板に塗布されるろう材ペーストの塗布量
を変化させることによって行うことができる。そして、
銅回路に対する銅放熱板の体積率が30〜90%である
回路基板に対し、銅回路側よりも放熱銅板側の接合層の
厚みを10μm以上厚くすることによって、空気中で3
50℃×5分、25℃×5分を1サイクルとする通炉試
験を5回行った後のJIS B 0621に従う平面度
が100μm以下と小さく抑えることができる。また、
抗折強度も25kgf/mm2以上と本来の高信頼性を
保ったものとなる。なお、銅回路側に形成される接合層
の厚みとしては10〜20μm程度が望ましい。In the present invention, the thickness of the bonding layer formed on the copper circuit side and the heat radiating copper plate side can be changed by changing the amount of the brazing material paste applied to the ceramic substrate and / or the copper plate. Can be. And
By increasing the thickness of the bonding layer on the heat dissipating copper plate side more than the copper circuit side by 10 μm or more with respect to the circuit board in which the volume ratio of the copper heat dissipating plate to the copper circuit is 30 to 90%,
The flatness according to JIS B 0621 after conducting the furnace test five times with 50 ° C. × 5 minutes and 25 ° C. × 5 minutes as one cycle can be suppressed to 100 μm or less. Also,
The transverse rupture strength is 25 kgf / mm 2 or more, which maintains the original high reliability. Note that the thickness of the bonding layer formed on the copper circuit side is preferably about 10 to 20 μm.
【0014】本発明で使用されるセラミックス基板の材
質としては、窒化ケイ素、窒化アルミニウム、アルミナ
等であるが、パワーモジュールには窒化アルミニウムが
適している。窒化アルミニウム基板の厚みとしては、厚
すぎると熱抵抗が大きくなり、薄すぎると耐久性がなく
なるため、0.5〜0.8mm程度が好ましい。The material of the ceramic substrate used in the present invention is silicon nitride, aluminum nitride, alumina or the like, but aluminum nitride is suitable for the power module. As the thickness of the aluminum nitride substrate, if it is too thick, the thermal resistance increases, and if it is too thin, the durability is lost.
【0015】セラミックス基板の表面性状は重要であ
り、微少な欠陥や窪み等は、銅回路、放熱銅板あるいは
それらの前駆体である銅板をセラミックス基板に接合す
る際に悪影響を与えるため平滑であることが望ましい。
従って、セラミックス基板は、ホーニング処理や機械加
工等による研磨処理が施されていることが好ましい。[0015] The surface properties of the ceramic substrate are important, and minute defects and dents have an adverse effect when joining a copper circuit, a heat-radiating copper plate, or a copper plate that is a precursor thereof to the ceramic substrate. Is desirable.
Therefore, it is preferable that the ceramic substrate has been subjected to a honing process or a polishing process such as machining.
【0016】銅回路及び放熱銅板を形成する銅の純度は
99.5%以上が好ましく、厚みは100〜500μm
が好ましい。The purity of copper forming the copper circuit and the heat dissipation copper plate is preferably 99.5% or more, and the thickness is 100 to 500 μm.
Is preferred.
【0017】セラミックス基板に銅回路及び放熱銅板を
形成する方法としては、セラミックス基板と銅板との接
合体をエッチングする方法、銅板から打ち抜かれた回路
及び放熱板のパターンをセラミックス基板に接合する方
法等によって行うことができ、これらの際における接合
方法としては、活性金属ろう付け法を用いる。As a method of forming a copper circuit and a heat radiating copper plate on a ceramic substrate, there are a method of etching a joined body of the ceramic substrate and the copper plate, a method of bonding a circuit punched from the copper plate and a pattern of the heat radiating plate to the ceramic substrate, and the like. An active metal brazing method is used as a joining method in these cases.
【0018】活性金属ろう付け法におけるろう材の金属
成分は、銀と銅を主成分とし、溶融時のセラミックス基
板との濡れ性を確保するために活性金属を副成分とした
ものである。活性金属成分は、セラミックス基板と反応
して複合酸化物や複合窒化物等の化合物を生成し、ろう
材とセラミックス基板との結合を強固なものにする。活
性金属の具体例をあげれば、チタン、ジルコニウム、ハ
フニウム、ニオブ、タンタル、バナジウムやこれらの化
合物である。本発明におけるこれらの比率としては、重
量割合で、銀60〜100部、銅0〜40部の合計量1
00部あたり、活性金属1〜30部である。In the active metal brazing method, the metal component of the brazing filler metal is silver and copper as main components, and the active metal is a subcomponent to ensure wettability with the ceramic substrate during melting. The active metal component reacts with the ceramic substrate to generate a compound such as a composite oxide or a composite nitride, thereby strengthening the bond between the brazing material and the ceramic substrate. Specific examples of the active metal include titanium, zirconium, hafnium, niobium, tantalum, vanadium, and compounds thereof. In the present invention, these ratios are, as weight ratios, 60 to 100 parts of silver and 0 to 40 parts of copper in a total amount of 1
The amount of the active metal is 1 to 30 parts per 00 parts.
【0019】接合温度としては780〜830℃が好ま
しく、保持時間は20〜60分が望ましい。温度が低
く、保持時間が短すぎる場合には、接合が不十分であ
り、逆に高温で保持時間が長すぎる場合には、金属板へ
のろう材成分の拡散が多すぎて金属板が硬くなり、耐ヒ
ートサイクル性が低下する。The bonding temperature is preferably 780-830 ° C., and the holding time is preferably 20-60 minutes. When the temperature is low and the holding time is too short, the bonding is insufficient.On the other hand, when the holding time is too high and the holding time is too long, the diffusion of the brazing material component into the metal plate is too much and the metal plate is hard. And the heat cycle resistance decreases.
【0020】[0020]
【実施例】以下、本発明を実施例と比較例をあげて具体
的に説明する。The present invention will be specifically described below with reference to examples and comparative examples.
【0021】実施例1〜2 重量割合で、Ag粉末90部、Cu粉末10部、TiH
2粉末3部、Zr粉末3部にテルピネオール15部を配
合し、ポリイソブチルメタアクリレートのテルピネオー
ル溶液を加えて混練し、ろう材ペーストを調製した。そ
れを、窒化アルミニウム基板(サイズ:60mm×36
mm×0.65mm 曲げ強さ:40kg/mm2 熱伝
導率:135W/mK)の銅回路形成面には塗布量(乾
燥後)を9mg/cm2 とし、また放熱銅板形成面には
塗布量(乾燥後)を実施例1では13mg/cm2 、実
施例2では17mg/cm2 として、塗布した。Examples 1 to 2 90 parts by weight of Ag powder, 10 parts of Cu powder, TiH
(2) 3 parts of powder and 3 parts of Zr powder were mixed with 15 parts of terpineol, and a terpineol solution of polyisobutyl methacrylate was added and kneaded to prepare a brazing filler metal paste. An aluminum nitride substrate (size: 60 mm × 36)
mm × 0.65 mm Flexural strength: 40 kg / mm 2 Thermal conductivity: 135 W / mK) The coating amount (after drying) is 9 mg / cm 2 on the copper circuit forming surface, and the coating amount is on the heat radiation copper plate forming surface. (After drying) was applied at 13 mg / cm 2 in Example 1 and 17 mg / cm 2 in Example 2.
【0022】次に、窒化アルミニウム基板の銅回路形成
面に、56mm×32mm×0.3mmの銅回路パター
ンを、また放熱銅板形成面に56mm×32mm×0.
15mmの放熱銅板のパターンを接触配置してから、真
空度1×10-5Torr以下の真空下、表1に示される
条件で加熱した後、600℃まで急冷し、その後2℃/
分の降温速度で冷却して回路基板を作製した。Next, a copper circuit pattern of 56 mm × 32 mm × 0.3 mm was formed on the copper circuit forming surface of the aluminum nitride substrate, and a 56 mm × 32 mm × 0.
A pattern of a heat-dissipating copper plate of 15 mm was placed in contact with the pattern, heated under the conditions shown in Table 1 under a vacuum of 1 × 10 −5 Torr or less, rapidly cooled to 600 ° C., and then cooled to 2 ° C. /
The circuit board was manufactured by cooling at a temperature lowering rate of 1 minute.
【0023】比較例1 窒化アルミニウム基板の両面のペースト塗布量を9mg
/cm2 としたこと以外は実施例1と同様にして回路基
板を作製した。Comparative Example 1 The amount of paste applied on both sides of an aluminum nitride substrate was 9 mg.
A circuit board was produced in the same manner as in Example 1 except that the ratio was set to / cm 2 .
【0024】比較例2 放熱銅板の厚みを0.30mmとしたこと以外は比較例
1と同様にして回路基板を作製した。Comparative Example 2 A circuit board was manufactured in the same manner as in Comparative Example 1 except that the thickness of the heat-dissipating copper plate was 0.30 mm.
【0025】比較例3 窒化アルミニウム基板の銅回路形成面にはろう材ペース
トの塗布量(乾燥後)を9mg/cm2 、放熱銅板形成
面には塗布量(乾燥後)を11mg/cm2 にて塗布し
たこと以外は実施例1と同様にして回路基板を作製し
た。The coating amount of the brazing material paste is a copper circuit forming surface of Comparative Example 3 aluminum nitride substrate (after drying) 9 mg / cm 2, the coating amount is in heat dissipating copper plate forming surface (after drying) to 11 mg / cm 2 A circuit board was prepared in the same manner as in Example 1 except that the substrate was applied.
【0026】これら一連の処理を経て作製された回路基
板について、空気中、350℃×5分、25℃×5分を
1サイクルとする通炉試験を5回行い、回路基板のJI
SB 0621に従う平面度及び抗折強度を測定した。
また、耐ヒートサイクル性を評価するため、空気中、−
40℃×30分保持後、25℃×10分放置、更に12
5℃×30分保持後、25℃×10分放置を1サイクル
とした耐久性試験を行い、銅回路又は放熱銅板が剥離開
始したサイクル数を測定した。更には、銅回路及び放熱
銅板の接合層の厚みを、回路基板を切断後、断面を研磨
し、走査型電子顕微鏡で任意の5箇所で測定しその値を
平均した。それらの結果を表1に示す。The circuit board manufactured through these series of processes was subjected to a furnace test five times in air at 350 ° C. × 5 minutes and 25 ° C. × 5 minutes as one cycle.
The flatness and bending strength according to SB 0621 were measured.
In addition, in order to evaluate heat cycle resistance, in air,-
After holding at 40 ° C. × 30 minutes, leave at 25 ° C. × 10 minutes, and further 12
After holding at 5 ° C. × 30 minutes, a durability test was performed with one cycle of standing at 25 ° C. × 10 minutes, and the number of cycles at which the copper circuit or the heat-dissipating copper plate started peeling was measured. Further, the thickness of the joining layer of the copper circuit and the heat-dissipating copper plate was measured at five arbitrary points with a scanning electron microscope after the circuit board was cut and the cross section was polished, and the values were averaged. Table 1 shows the results.
【0027】[0027]
【表1】 [Table 1]
【0028】[0028]
【発明の効果】本発明によれば、熱履歴後の反りが少な
く、かつヒートサイクル性に優れた高信頼性の回路基板
が提供される。According to the present invention, there is provided a highly reliable circuit board which is less warped after heat history and has excellent heat cycle properties.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 辻村 好彦 福岡県大牟田市新開町1 電気化学工業株 式会社大牟田工場内 (72)発明者 寺野 克典 福岡県大牟田市新開町1 電気化学工業株 式会社大牟田工場内 Fターム(参考) 5E338 AA02 AA18 BB80 CC01 CC08 EE02 EE28 5F036 AA01 BB01 BC06 BC33 BD01 BD13 BD14 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Yoshihiko Tsujimura, Inventor 1 Shinkaicho, Omuta-shi, Fukuoka Denki Kagaku Kogyo Co., Ltd. Inside the Omuta Plant F-term in Omuta factory (reference) 5E338 AA02 AA18 BB80 CC01 CC08 EE02 EE28 5F036 AA01 BB01 BC06 BC33 BD01 BD13 BD14
Claims (2)
他方の面に放熱銅板が、それぞれ活性金属成分を含むろ
う材を用いて接合されてなるものにおいて、放熱銅板側
の接合層の厚みが銅回路側よりも10μm以上厚くなっ
ていることを特徴とする回路基板。A copper circuit is provided on one side of a ceramic substrate,
The heat-dissipating copper plate is bonded to the other surface using a brazing material containing an active metal component, and the thickness of the bonding layer on the heat-dissipating copper plate side is at least 10 μm thicker than the copper circuit side. Circuit board.
他方の面に放熱銅板が形成されてなるものにおいて、銅
回路に対する放熱銅板の体積率が30〜90%であり、
空気中で350℃×5分、25℃×5分を1サイクルと
する通炉試験を5回行った後のJIS B 0621に
従う平面度が100μm以下であることを特徴とする請
求項1記載の回路基板。2. A copper circuit on one side of a ceramic substrate,
A heat radiation copper plate formed on the other surface, wherein the volume ratio of the heat radiation copper plate to the copper circuit is 30 to 90%;
2. The flatness according to JIS B 0621 after performing a furnace test five times in air at 350 ° C. × 5 minutes and 25 ° C. × 5 minutes as one cycle is 100 μm or less. Circuit board.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22790298A JP3537320B2 (en) | 1998-08-12 | 1998-08-12 | Circuit board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22790298A JP3537320B2 (en) | 1998-08-12 | 1998-08-12 | Circuit board |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2000058723A true JP2000058723A (en) | 2000-02-25 |
JP3537320B2 JP3537320B2 (en) | 2004-06-14 |
Family
ID=16868105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22790298A Expired - Fee Related JP3537320B2 (en) | 1998-08-12 | 1998-08-12 | Circuit board |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3537320B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002208760A (en) * | 2001-01-09 | 2002-07-26 | Denki Kagaku Kogyo Kk | Circuit board and method for manufacturing it |
KR20220142813A (en) * | 2021-04-15 | 2022-10-24 | 주식회사 케이씨씨 | Ceramic substrate, and preparing method thereof |
JP2023147162A (en) * | 2022-03-29 | 2023-10-12 | 株式会社プロテリアル | Ceramic substrate and ceramic divided substrate |
-
1998
- 1998-08-12 JP JP22790298A patent/JP3537320B2/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002208760A (en) * | 2001-01-09 | 2002-07-26 | Denki Kagaku Kogyo Kk | Circuit board and method for manufacturing it |
JP4685245B2 (en) * | 2001-01-09 | 2011-05-18 | 電気化学工業株式会社 | Circuit board and manufacturing method thereof |
KR20220142813A (en) * | 2021-04-15 | 2022-10-24 | 주식회사 케이씨씨 | Ceramic substrate, and preparing method thereof |
KR102529238B1 (en) * | 2021-04-15 | 2023-05-08 | 주식회사 케이씨씨 | Ceramic substrate, and preparing method thereof |
JP2023147162A (en) * | 2022-03-29 | 2023-10-12 | 株式会社プロテリアル | Ceramic substrate and ceramic divided substrate |
Also Published As
Publication number | Publication date |
---|---|
JP3537320B2 (en) | 2004-06-14 |
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