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JP3308883B2 - Board - Google Patents

Board

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Publication number
JP3308883B2
JP3308883B2 JP32066997A JP32066997A JP3308883B2 JP 3308883 B2 JP3308883 B2 JP 3308883B2 JP 32066997 A JP32066997 A JP 32066997A JP 32066997 A JP32066997 A JP 32066997A JP 3308883 B2 JP3308883 B2 JP 3308883B2
Authority
JP
Japan
Prior art keywords
aluminum
weight
copper
parts
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP32066997A
Other languages
Japanese (ja)
Other versions
JPH11154776A (en
Inventor
剛 浦川
美幸 中村
康人 伏井
好彦 辻村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP32066997A priority Critical patent/JP3308883B2/en
Publication of JPH11154776A publication Critical patent/JPH11154776A/en
Application granted granted Critical
Publication of JP3308883B2 publication Critical patent/JP3308883B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Structure Of Printed Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、特に電子部品のパ
ワ−モジュールに好適な高信頼性の基板(回路基板又は
放熱基板)を提供することを目的とするものである。
BACKGROUND OF THE INVENTION An object of the present invention is to provide a highly reliable board (circuit board or heat radiating board) particularly suitable for a power module of an electronic component.

【0002】本発明の基板は、セラミックス基板にアル
ムニウム(Al)回路及び/又は放熱Al板を形成させ
てなるものであり、Al回路のみ又はAl回路と放熱A
l板を形成させたものは回路基板として、またAl放熱
板のみを形成させたものは放熱基板として使用される。
本発明における回路基板と放熱基板との本質的な差異
は、放熱基板にはAl回路が形成されていないだけであ
り、その目的、製造法等は回路基板のそれらと同じであ
るので、以下、回路基板を例にとって本発明を説明す
る。
The substrate of the present invention is obtained by forming an aluminum (Al) circuit and / or a heat radiation Al plate on a ceramic substrate.
The one formed with the 1 plate is used as a circuit board, and the one formed with only an Al heat radiating plate is used as a heat radiating substrate.
The essential difference between the circuit board and the heat radiating board in the present invention is that only the Al circuit is not formed on the heat radiating board, and its purpose, manufacturing method, etc. are the same as those of the circuit board. The present invention will be described using a circuit board as an example.

【0003】[0003]

【従来の技術】近年、ロボットやモーター等の産業機器
の高性能化に伴い、大電力・高能率インバーター等パワ
ーモジュールの変遷が進んでおり、半導体素子から発生
する熱も増加の一途をたどっている。この熱を効率よく
放散させるため、パワーモジュール基板では従来より様
々な方法が取られてきた。特に最近、良好な熱伝導を有
するセラミックス基板が利用できるようになったため、
その基板上に銅板を接合し、銅回路を形成後、そのまま
あるいはニッケルメッキ等の処理を施してから半導体素
子を実装する構造も採用されつつある。この場合におい
て、銅回路の反対面のセラミックス基板面には放熱銅板
を形成させた構造のものもある。
2. Description of the Related Art In recent years, power modules such as high-power and high-efficiency inverters have been changing with the advancement of the performance of industrial equipment such as robots and motors. I have. In order to efficiently dissipate this heat, various methods have conventionally been used for power module substrates. Especially recently, ceramic substrates with good thermal conductivity have become available,
A structure in which a copper plate is bonded on the substrate to form a copper circuit and then a semiconductor element is mounted as it is or after performing a process such as nickel plating is being adopted. In this case, there is also a structure in which a heat-dissipating copper plate is formed on the ceramic substrate surface opposite to the copper circuit.

【0004】このようなモジュールは、当初、簡単な工
作機械に使用されてきたが、ここ数年、溶接機、電車の
駆動部、電気自動車に使用されるようになり、より厳し
い環境条件下における耐久性と更なる小型化が要求され
るようになってきた。そこで、セラミックス基板に対し
ても、電流密度を上げるための銅回路厚の増加、熱衝撃
等に対する耐久性の向上が要求され、セラミックス焼結
体の新たな製造研究により対応している。
[0004] Such modules were initially used for simple machine tools, but have been used for welding machines, train drives and electric vehicles in recent years, and have been used under more severe environmental conditions. Durability and further miniaturization have been required. Therefore, the ceramic substrate is also required to have an increased copper circuit thickness for increasing the current density, and to have improved durability against thermal shock and the like.

【0005】[0005]

【発明が解決しようとする課題】従来、汎用されている
回路基板は、アルミナ基板又は窒化アルミニウム基板に
銅回路を形成させたものであるが、更なる耐ヒートサイ
クル性に対する信頼性を向上させるため、最近では窒化
アルミニウム基板にAl回路を形成させたものが提案さ
れている。しかしながら、アルミニウムは電流密度等の
電気的特性が銅よりも劣るので、そのような回路基板は
広く普及されるまでには至っていない。しかも、アルミ
ニウムとセラミックス基板を接合する方法として、Al
−Si金属箔を両者間に介在させて加熱する方法がある
が、これでは更なる耐ヒートサイクル性に対する信頼性
の向上は困難である。
Conventionally, a commonly used circuit board is formed by forming a copper circuit on an alumina substrate or an aluminum nitride substrate. However, in order to further improve the reliability with respect to heat cycle resistance. Recently, an aluminum nitride substrate having an Al circuit formed thereon has been proposed. However, since aluminum has inferior electrical properties such as current density to copper, such circuit boards have not been widely used. Moreover, as a method for joining aluminum and a ceramic substrate, Al is used.
Although there is a method of heating by interposing a -Si metal foil between the two, it is difficult to further improve the reliability with respect to heat cycle resistance.

【0006】本発明の目的は、セラミックス基板にAl
回路及び/又は放熱Al板が形成されてなる基板におい
て、その耐ヒートサイクル性に対する信頼性を更に高め
ることである。
An object of the present invention is to provide a ceramic substrate with Al
The object of the present invention is to further increase the reliability of the circuit and / or the heat-dissipating Al plate on the substrate formed with the heat-dissipating Al plate.

【0007】[0007]

【課題を解決するための手段】すなわち、本発明は、セ
ラミック基板とアルミニウム回路及び/又は放熱アルミ
ニウム板とが、ろう材中の銅及びシリコンが上記アルミ
ニウム回路及び/又は放熱アルミニウム板中に粒界液相
拡散して接合されてなるものであって、上記ろう材の金
属成分の比率が、アルミニウム70〜95重量部、シリ
コン0.5〜25重量部及び銅0.5〜8重量部の合計
100重量部あたり、水素化チタン1〜30重量部であ
ることを特徴とする基板である。
That is, according to the present invention, a ceramic substrate and an aluminum circuit and / or a heat-dissipating aluminum plate are provided so that copper and silicon in a brazing material have grain boundaries in the aluminum circuit and / or the heat-dissipating aluminum plate. It is those liquid-phase diffusion to become joined, gold the brazing material
70-95 parts by weight of aluminum,
0.5 to 25 parts by weight of copper and 0.5 to 8 parts by weight of copper
The substrate is characterized in that titanium hydride is 1 to 30 parts by weight per 100 parts by weight .

【0008】[0008]

【発明の実施の形態】以下、更に詳しく本発明について
説明する。
BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in more detail.

【0009】回路基板の金属回路部分には数百アンペ
ア、数千ボルトの高電圧、高電流が流れるため、現在、
銅回路が主として用いられている。しかし、使用時の環
境の変化やスイッチングによる熱等によって熱衝撃を繰
り返し受けるため、銅とセラミックスの熱膨張差による
熱応力により、セラミックス基板の界面より銅回路が剥
離する問題が起こる。
A high voltage and a high current of several hundred amperes and several thousand volts flow through the metal circuit portion of the circuit board.
Copper circuits are mainly used. However, since a thermal shock is repeatedly received due to a change in environment during use, heat due to switching, and the like, a problem arises in that a copper circuit is separated from an interface of a ceramic substrate due to thermal stress due to a difference in thermal expansion between copper and ceramic.

【0010】銅とセラミックスの熱膨張差による熱応力
は、熱膨張率だけではなく、その金属自体が持つ機械的
性質、主に引張強度や耐力でその大きさが決まる。した
がって、熱応力を軽減させるには、銅よりも引張強度や
耐力の小さい金属を用いればよく、そのような特性を持
つ金属の一つとしてアルミニウムがある。しかしなが
ら、従来のAl−Si金属箔を介在させる、セラミック
ス基板とアルミニウム板との接合法においては、その接
合形態は、アルミニウム板へのSi成分の固相拡散であ
るので、現今の更なる耐ヒートサイクル性の要求は満た
し得ない。
The magnitude of the thermal stress due to the difference in thermal expansion between copper and ceramics is determined not only by the coefficient of thermal expansion but also by the mechanical properties of the metal itself, mainly tensile strength and proof stress. Therefore, in order to reduce the thermal stress, a metal having lower tensile strength and proof stress than copper may be used, and aluminum is one of such metals having such characteristics. However, in the conventional joining method of a ceramic substrate and an aluminum plate with an Al-Si metal foil interposed therebetween, the joining form is a solid phase diffusion of a Si component to the aluminum plate. Cycleability requirements cannot be met.

【0011】本発明は、この問題を解決したものであ
り、アルミニウム板とセラミックス基板との接合形態を
従来とは異なり、銅とSiとをアルミニウム板中に粒界
液相拡散させることによって、耐ヒートサイクル性の信
頼性を更に向上させたものである。
The present invention solves this problem, and differs from the prior art in the form of bonding between the aluminum plate and the ceramics substrate. By diffusing copper and Si into the aluminum plate at the grain boundary liquid phase, the present invention provides an improved resistance. The reliability of the heat cycle is further improved.

【0012】ここで、粒界液相拡散とは、アルミニウム
銅とSiと水素化チタンとを含むペースト状ろう材
を、セラミックス基板とアルミニウム板との間に介在さ
せ、それを高真空下で熱処理することによって、アルミ
ニウムと銅とSiとを含む液相がアルミニウム板の粒界
に沿って拡散することである。
[0012] Here, the grain boundary liquid phase diffusion means that a paste brazing material containing aluminum, copper, Si and titanium hydride is interposed between a ceramic substrate and an aluminum plate, and is then placed under a high vacuum. By the heat treatment, the liquid phase containing aluminum, copper and Si diffuses along the grain boundaries of the aluminum plate.

【0013】従来のAl−Si金属箔を介在させた固相
拡散では、Si成分がアルミニウム板の結晶格子内に取
り込まれたり、あるいは格子原子と置換するといった原
子レベルでの拡散であるため、アルミニウム板が変質し
てしまう。これに対し、粒界液相拡散では、ろう材成分
がアルミニウムの粒界に存在するためアルミニウム本来
の性質は損なわれず、基板の特性及び信頼性は、従来の
Al回路基板ないしは銅回路基板よりも向上する。
[0013] In the conventional solid-phase diffusion with an Al-Si metal foil interposed, the diffusion at the atomic level is such that the Si component is taken into the crystal lattice of the aluminum plate or replaces the lattice atoms. The board will deteriorate. On the other hand, in the liquid phase diffusion at the grain boundary, the brazing filler metal component is present at the grain boundaries of aluminum, so that the original properties of aluminum are not impaired. improves.

【0014】本発明で使用されるセラミックス基板の材
質としては、窒化ケイ素、窒化アルミニウム、アルミナ
等であるが、電気自動車用モジュールには窒化アルミニ
ウムが適している。セラミックス基板の厚みとしては、
厚すぎると熱抵抗が大きくなり、薄すぎると耐久性がな
くなるため、0.5〜0.8mm程度が好ましい。
The material of the ceramic substrate used in the present invention is, for example, silicon nitride, aluminum nitride, or alumina. Aluminum nitride is suitable for an electric vehicle module. As the thickness of the ceramic substrate,
If the thickness is too large, the thermal resistance increases, and if the thickness is too small, the durability is lost. Therefore, the thickness is preferably about 0.5 to 0.8 mm.

【0015】セラミックス基板の表面性状は重要であ
り、微少な欠陥や窪み等は、Al回路、放熱Al板ある
いはそれらの前駆体であるAl板をセラミックス基板に
接合する際に悪影響を与えるため、平滑であることが望
ましい。従って、セラミックス基板は、ホーニング処理
や機械加工等による研磨処理が施されていることが好ま
しい。
The surface properties of the ceramic substrate are important, and minute defects and dents have an adverse effect when joining an Al circuit, a heat-radiating Al plate, or an Al plate that is a precursor thereof to the ceramic substrate. It is desirable that Therefore, it is preferable that the ceramic substrate has been subjected to a honing process or a polishing process such as machining.

【0016】Al回路、放熱Al板のアルミニウム純度
は、99.5%以上が好ましく、また厚みは100〜5
00μmが好ましい。
The aluminum purity of the Al circuit and the heat radiation Al plate is preferably 99.5% or more, and the thickness is 100 to 5%.
00 μm is preferred.

【0017】セラミックス基板にAl回路及び/又は放
熱Al板を形成する方法としては、セラミックス基板と
アルミニウム板との接合体をエッチングする方法、アル
ミニウム板から打ち抜かれたAl回路及び/又は放熱A
l板のパターンをセラミックス基板に接合する方法等に
よって行うことができ、これらの際における接合は、ペ
ースト状ろう材を用いた活性金属ろう付け法による粒界
液相拡散によって行われる。
As a method of forming an Al circuit and / or a heat radiation Al plate on a ceramic substrate, there are a method of etching a joined body of a ceramic substrate and an aluminum plate, an Al circuit punched from an aluminum plate and / or a heat radiation A plate.
The l-plate pattern can be joined to the ceramic substrate by a method or the like. In these cases, the joining is performed by grain boundary liquid phase diffusion by an active metal brazing method using a paste brazing material.

【0018】活性金属ろう付け法については、例えば特
開昭60−177634号公報に記載されている。活性
金属ろう付け法におけるろう材の金属成分は、アルミニ
ウムと、シリコン、錫、鉛、ゲルマニウム等の4b金属
好ましくはシリコンと、銅、銀、金等の1b金属好まし
くは銅とを主成分とし、溶融時のセラミックス基板との
濡れ性を確保するために活性金属を副成分とする。活性
金属の具体例をあげれば、チタン、ジルコニウム、ハフ
ニウム、ニオブ、タンタル、バナジウム等及びこれらの
化合物である。中でも、水素化チタンが好ましい。本発
明におけるこれらの比率は、アルミニウム70〜95重
量部、シリコン0.5〜25重量部及び0.5〜8重
量部の合計量100重量部あたり、水素化チタン1〜3
0重量部である。接合温度は、560〜640℃が望ま
しく、その熱源は近赤外線が好ましいが、これに限られ
ることはなく従来の抵抗加熱方式であってもよい。
The active metal brazing method is described in, for example, JP-A-60-177634. The metal component of the brazing filler metal in the active metal brazing method is mainly composed of aluminum, 4b metal such as silicon, tin, lead and germanium, preferably silicon, and 1b metal such as copper, silver and gold, preferably copper. An active metal is used as a secondary component in order to ensure wettability with the ceramic substrate during melting. Specific examples of the active metal include titanium, zirconium, hafnium, niobium, tantalum, vanadium and the like and compounds thereof. Among them, titanium hydride is preferable. In the present invention, the ratio of titanium hydride to titanium 1-3 per 100 parts by weight of 70 to 95 parts by weight of aluminum, 0.5 to 25 parts by weight of silicon and 0.5 to 8 parts by weight of copper is used.
0 parts by weight. The bonding temperature is desirably 560 to 640 ° C., and the heat source is preferably near infrared rays. However, the heat source is not limited to this, and a conventional resistance heating method may be used.

【0019】[0019]

【実施例】以下、本発明を実施例と比較例をあげて具体
的に説明する。
The present invention will be specifically described below with reference to examples and comparative examples.

【0020】実施例1〜4 表1に示したろう材組成100重量部にテルピネオール
25重量部を配合し、ポリイソブチルメタアクリレート
のテルピネオール溶液を加えて混練し、ろう材ペースト
を調製した。このろう材ペーストを窒化アルミニウム基
板(サイズ:60mm×36mm×0.65mm 曲げ
強さ:40kg/mm2 熱伝導率:135W/mK)
の両面にスクリーン印刷によって回路パターン状に塗布
した。その際の塗布量(乾燥後)は3mg/cm2 とし
た。
Examples 1 to 4 25 parts by weight of terpineol were mixed with 100 parts by weight of the brazing material composition shown in Table 1, and a terpineol solution of polyisobutyl methacrylate was added and kneaded to prepare a brazing material paste. This brazing material paste is applied to an aluminum nitride substrate (size: 60 mm × 36 mm × 0.65 mm, bending strength: 40 kg / mm 2 thermal conductivity: 135 W / mK)
Was applied in the form of a circuit pattern on both sides by screen printing. The coating amount (after drying) at that time was 3 mg / cm 2 .

【0021】次に、窒化アルミニウム基板の両面に、ア
ルミニウム板(純度99.5%、56mm×32mm×
0.3mm)のパターンを接触配置してから、真空度1
×10-5Torr以下の真空下、620〜630℃で2
0〜30分間赤外線加熱した後、2℃/分の降温速度で
冷却して回路基板を製造した。このとき、アルミニウム
板と窒化アルミニウムとの接合は、アルミニウム板断面
の走査型電子顕微鏡の観察結果から、粒界液相拡散の形
態をとっていることが確認された。
Next, an aluminum plate (purity 99.5%, 56 mm × 32 mm ×
0.3 mm) pattern, and the degree of vacuum was 1
Under vacuum of 10-5 Torr or less at 620-630 ° C.
After heating by infrared rays for 0 to 30 minutes, the circuit board was manufactured by cooling at a temperature lowering rate of 2 ° C./min. At this time, it was confirmed from the results of observation of the cross section of the aluminum plate by a scanning electron microscope that the bonding between the aluminum plate and the aluminum nitride was in the form of grain boundary liquid phase diffusion.

【0022】比較例1 窒化アルミニウム基板の両面に、アルミニウム80%、
シリコン20%からなる金属箔(56mm×32mm×
0.05mm)を介在させてアルミニウム板(純度9
9.5%、56mm×32mm×0.3mm)を接触配
置し、それを真空度1×10-5Torr以下の真空下、
630℃で30分間近赤外線加熱した後、2℃/分の降
温速度で冷却して回路基板を製造した。この場合のアル
ミニウム板と窒化アルミニウム基板との接合は固相拡散
の形態をとっていた。
COMPARATIVE EXAMPLE 1 Aluminum 80% on both surfaces of an aluminum nitride substrate
Metal foil made of 20% silicon (56 mm x 32 mm x
0.05mm) and an aluminum plate (purity 9)
9.5%, 56 mm × 32 mm × 0.3 mm) and placed under a vacuum of 1 × 10 −5 Torr or less.
After near-infrared heating at 630 ° C. for 30 minutes, the circuit board was manufactured by cooling at a temperature lowering rate of 2 ° C./min. In this case, the bonding between the aluminum plate and the aluminum nitride substrate was in the form of solid phase diffusion.

【0023】上記で製作された回路基板について、空気
中、−40℃×15分、25℃×15分、125℃×1
0分、25℃×15分を1サイクルとするヒートサイク
ル試験を行い、Al回路又は放熱Al板が剥離するサイ
クル数を測定した。それらの結果を表1に示す。
With respect to the circuit board manufactured above, in air, -40 ° C. × 15 minutes, 25 ° C. × 15 minutes, 125 ° C. × 1
A heat cycle test was performed with 0 minute and 25 ° C. × 15 minutes as one cycle, and the number of cycles at which the Al circuit or the heat-dissipating Al plate was peeled was measured. Table 1 shows the results.

【0024】[0024]

【表1】 [Table 1]

【0025】[0025]

【発明の効果】本発明によれば、耐ヒートサイクル性に
優れた高信頼性の基板(回路基板、放熱基板)が提供さ
れる。
According to the present invention, a highly reliable board (circuit board, heat dissipation board) having excellent heat cycle resistance is provided.

フロントページの続き (56)参考文献 特開 平7−45915(JP,A) 特開 平9−262691(JP,A) (58)調査した分野(Int.Cl.7,DB名) H05K 3/38 H05K 1/02 H01L 23/13 C04B 37/02 Continuation of the front page (56) References JP-A-7-45915 (JP, A) JP-A-9-262691 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H05K 3 / 38 H05K 1/02 H01L 23/13 C04B 37/02

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 セラミック基板とアルミニウム回路及び
/又は放熱アルミニウム板とが、ろう材中の銅及びシリ
コンが上記アルミニウム回路及び/又は放熱アルミニウ
ム板中に粒界液相拡散して接合されてなるものであっ
て、上記ろう材の金属成分の比率が、アルミニウム70
〜95重量部、シリコン0.5〜25重量部及び銅0.
5〜8重量部の合計100重量部あたり、水素化チタン
1〜30重量部であることを特徴とする基板。
1. The method according to claim 1, wherein the ceramic substrate and the aluminum circuit and / or the heat dissipating aluminum plate are made of copper and silicon in the brazing material.
Met Con those, which are bonded by diffusing grain boundary liquid phase in the aluminum circuit and / or dissipating aluminum plate in
The ratio of the metal component of the brazing material is aluminum 70
To 95 parts by weight, 0.5 to 25 parts by weight of silicon, and 0.1 part by weight of copper.
5 to 8 parts by weight of total 100 parts by weight of titanium hydride
1 to 30 parts by weight of a substrate.
JP32066997A 1997-11-21 1997-11-21 Board Expired - Lifetime JP3308883B2 (en)

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JP5640548B2 (en) * 2009-08-19 2014-12-17 三菱マテリアル株式会社 Power module substrate manufacturing method
KR101709370B1 (en) 2009-10-22 2017-02-22 미쓰비시 마테리알 가부시키가이샤 Substrate for power module, substrate with heat sink for power module, power module, method for producing substrate for power module, and method for producing substrate with heat sink for power module
JP5724273B2 (en) * 2009-10-22 2015-05-27 三菱マテリアル株式会社 Power module substrate, power module substrate with heat sink, power module, method for manufacturing power module substrate, and method for manufacturing power module substrate with heat sink
JP5504842B2 (en) * 2009-11-20 2014-05-28 三菱マテリアル株式会社 Power module substrate, power module substrate with heat sink, power module, and method for manufacturing power module substrate
KR101878492B1 (en) * 2011-02-01 2018-07-13 미쓰비시 마테리알 가부시키가이샤 Method for producing substrate for power module, substrate for power module, substrate for power module with heat sink, and power module
JP6621076B2 (en) * 2013-03-29 2019-12-18 三菱マテリアル株式会社 Power module substrate, power module substrate with heat sink, and power module
EP3162781B1 (en) * 2014-06-30 2021-02-24 Mitsubishi Materials Corporation Method for producing ceramic-aluminum bonded body, method for producing power module substrate, ceramic-aluminum bonded body, and power module substrate
CN114349471B (en) * 2022-01-20 2022-11-25 深圳思睿辰新材料有限公司 Ceramic aluminum-coated plate for IGBT packaging and preparation method thereof

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