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ITMI20001075A0 - Elemento magnetoresistivo - Google Patents

Elemento magnetoresistivo

Info

Publication number
ITMI20001075A0
ITMI20001075A0 IT2000MI001075A ITMI20001075A ITMI20001075A0 IT MI20001075 A0 ITMI20001075 A0 IT MI20001075A0 IT 2000MI001075 A IT2000MI001075 A IT 2000MI001075A IT MI20001075 A ITMI20001075 A IT MI20001075A IT MI20001075 A0 ITMI20001075 A0 IT MI20001075A0
Authority
IT
Italy
Prior art keywords
magnetoresisting
magnetoresisting element
Prior art date
Application number
IT2000MI001075A
Other languages
English (en)
Inventor
Martin Freitag
Peter Schmollngruber
Hubert Brueckl
Sokja Heitmann
Andras Huetten
Guenter Reiss
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of ITMI20001075A0 publication Critical patent/ITMI20001075A0/it
Publication of ITMI20001075A1 publication Critical patent/ITMI20001075A1/it
Application granted granted Critical
Publication of IT1317590B1 publication Critical patent/IT1317590B1/it

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Measuring Magnetic Variables (AREA)
IT2000MI001075A 1999-05-29 2000-05-16 Elemento magnetoresistivo IT1317590B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19924756A DE19924756A1 (de) 1999-05-29 1999-05-29 Magnetoresistives Element

Publications (3)

Publication Number Publication Date
ITMI20001075A0 true ITMI20001075A0 (it) 2000-05-16
ITMI20001075A1 ITMI20001075A1 (it) 2001-11-16
IT1317590B1 IT1317590B1 (it) 2003-07-15

Family

ID=7909662

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2000MI001075A IT1317590B1 (it) 1999-05-29 2000-05-16 Elemento magnetoresistivo

Country Status (4)

Country Link
DE (1) DE19924756A1 (it)
FR (1) FR2794288A1 (it)
GB (1) GB2351604B (it)
IT (1) IT1317590B1 (it)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19949714A1 (de) * 1999-10-15 2001-04-26 Bosch Gmbh Robert Magnetisch sensitives Bauteil, insbesondere Sensorelement, mit magnetoresistiven Schichtsystemen in Brückenschaltung

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3483895B2 (ja) * 1990-11-01 2004-01-06 株式会社東芝 磁気抵抗効果膜
FR2685489B1 (fr) * 1991-12-23 1994-08-05 Thomson Csf Capteur de champ magnetique faible a effet magnetoresistif.
US5549978A (en) * 1992-10-30 1996-08-27 Kabushiki Kaisha Toshiba Magnetoresistance effect element
JP3219329B2 (ja) * 1993-02-03 2001-10-15 財団法人生産開発科学研究所 磁気抵抗効果素子
US5576915A (en) * 1993-03-15 1996-11-19 Kabushiki Kaisha Toshiba Magnetoresistive head with antiferromagnetic sublayers interposed between first and second spin-valve units to exchange bias inner magnetic films thereof
JPH0779034A (ja) * 1993-04-13 1995-03-20 Matsushita Electric Ind Co Ltd 磁気抵抗効果素子
US5828525A (en) * 1994-03-15 1998-10-27 Kabushiki Kaisha Toshiba Differential detection magnetoresistance head
US5841611A (en) * 1994-05-02 1998-11-24 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect device and magnetoresistance effect type head, memory device, and amplifying device using the same
JPH0950613A (ja) * 1995-08-03 1997-02-18 Sony Corp 磁気抵抗効果素子及び磁界検出装置
US5701222A (en) * 1995-09-11 1997-12-23 International Business Machines Corporation Spin valve sensor with antiparallel magnetization of pinned layers
JPH09274710A (ja) * 1996-04-04 1997-10-21 Fujitsu Ltd スピンバルブ磁気抵抗効果ヘッドとその製造方法及び磁気記録装置
US5825595A (en) * 1997-05-13 1998-10-20 International Business Machines Corporation Spin valve sensor with two spun values separated by an insulated current conductor
US6580587B1 (en) * 1998-09-28 2003-06-17 Seagate Technology Llc Quad-layer GMR sandwich

Also Published As

Publication number Publication date
GB2351604B (en) 2002-01-23
ITMI20001075A1 (it) 2001-11-16
GB0011595D0 (en) 2000-07-05
IT1317590B1 (it) 2003-07-15
GB2351604A (en) 2001-01-03
FR2794288A1 (fr) 2000-12-01
DE19924756A1 (de) 2000-11-30

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