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ITMI921873A0 - Dispositivo semiconduttore e metodo per fabbicarlo - Google Patents

Dispositivo semiconduttore e metodo per fabbicarlo

Info

Publication number
ITMI921873A0
ITMI921873A0 IT92MI1873A ITMI921873A ITMI921873A0 IT MI921873 A0 ITMI921873 A0 IT MI921873A0 IT 92MI1873 A IT92MI1873 A IT 92MI1873A IT MI921873 A ITMI921873 A IT MI921873A IT MI921873 A0 ITMI921873 A0 IT MI921873A0
Authority
IT
Italy
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
IT92MI1873A
Other languages
English (en)
Inventor
Ahn Ji-Hung
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019910015250A external-priority patent/KR940009611B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI921873A0 publication Critical patent/ITMI921873A0/it
Publication of ITMI921873A1 publication Critical patent/ITMI921873A1/it
Application granted granted Critical
Publication of IT1259016B publication Critical patent/IT1259016B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/947—Subphotolithographic processing

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
ITMI921873A 1991-08-31 1992-07-30 Dispositivo semiconduttore e metodo per fabbicarlo IT1259016B (it)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1019910015250A KR940009611B1 (ko) 1991-08-31 1991-08-31 산화막식각마스크를 이용하여 패터닝된 고집적 반도체장치의 커패시터 제조방법(poem 셀)
KR910021974 1991-11-30
KR920003339 1992-02-29

Publications (3)

Publication Number Publication Date
ITMI921873A0 true ITMI921873A0 (it) 1992-07-30
ITMI921873A1 ITMI921873A1 (it) 1994-01-30
IT1259016B IT1259016B (it) 1996-03-11

Family

ID=27348767

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI921873A IT1259016B (it) 1991-08-31 1992-07-30 Dispositivo semiconduttore e metodo per fabbicarlo

Country Status (7)

Country Link
US (1) US5330614A (it)
JP (1) JP2677490B2 (it)
DE (1) DE4224946A1 (it)
FR (1) FR2680913B1 (it)
GB (1) GB2259187B (it)
IT (1) IT1259016B (it)
TW (1) TW243541B (it)

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KR960011664B1 (ko) * 1993-05-21 1996-08-24 현대전자산업 주식회사 반도체 장치의 캐패시터 형성방법
KR950010078A (ko) * 1993-09-09 1995-04-26 김주용 반도체 기억장치의 제조방법
KR100231593B1 (ko) * 1993-11-19 1999-11-15 김주용 반도체 소자의 캐패시터 제조방법
KR0132859B1 (ko) * 1993-11-24 1998-04-16 김광호 반도체장치의 커패시터 제조방법
KR950021710A (ko) * 1993-12-01 1995-07-26 김주용 반도체 장치의 캐패시터 제조방법
US5429976A (en) * 1993-12-01 1995-07-04 United Microelectronics Corporation Self-aligned method for forming polysilicon word lines on top of gate electrodes to increase capacitance of a stacked capacitor in a DRAM cell
JP2555965B2 (ja) * 1993-12-13 1996-11-20 日本電気株式会社 半導体装置の製造方法
GB2285176B (en) * 1993-12-27 1997-11-26 Hyundai Electronics Ind Structure and manufacturing method of a charge storage electrode
KR0131744B1 (ko) * 1993-12-28 1998-04-15 김주용 반도체 소자의 캐패시터 제조방법
KR950021644A (ko) * 1993-12-31 1995-07-26 김주용 반도체 기억장치 및 그 제조방법
JPH0837240A (ja) * 1994-07-22 1996-02-06 Nec Corp 半導体装置の製造方法
ATE220478T1 (de) * 1995-02-28 2002-07-15 Micron Technology Inc Verfahren zur herstellung einer struktur unter verwendung von wiederablagerung
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JP2751906B2 (ja) * 1996-01-17 1998-05-18 日本電気株式会社 容量素子の形成方法
KR100207463B1 (ko) * 1996-02-26 1999-07-15 윤종용 반도체 장치의 커패시터 제조방법
KR100207462B1 (ko) * 1996-02-26 1999-07-15 윤종용 반도체 장치의 커패시터 제조방법
KR100207466B1 (ko) * 1996-02-28 1999-07-15 윤종용 반도체 장치의 커패시터 제조방법
US5851882A (en) 1996-05-06 1998-12-22 Micron Technology, Inc. ZPROM manufacture and design and methods for forming thin structures using spacers as an etching mask
KR100219483B1 (ko) * 1996-06-03 1999-09-01 윤종용 반도체 장치의 커패시터 제조방법
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US5759890A (en) * 1996-08-16 1998-06-02 United Microelectronics Corporation Method for fabricating a tree-type capacitor structure for a semiconductor memory device
JP2930110B2 (ja) * 1996-11-14 1999-08-03 日本電気株式会社 半導体記憶装置およびその製造方法
KR100236069B1 (ko) * 1996-12-26 1999-12-15 김영환 캐패시터 및 그 제조방법
US6548346B1 (en) * 1997-04-04 2003-04-15 United Microelectronics Corp. Process for forming DRAM cell
US6218260B1 (en) 1997-04-22 2001-04-17 Samsung Electronics Co., Ltd. Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby
KR100234379B1 (ko) * 1997-06-10 1999-12-15 윤종용 비트라인의 산화를 방지하기 위한 반도체 메모리장치의 제조방법
TW463289B (en) * 1997-06-27 2001-11-11 Taiwan Semiconductor Mfg Method for forming annular capacitor of memory
KR100244306B1 (ko) * 1997-07-29 2000-02-01 김영환 반도체 소자의 커패시터의 제조 방법
US6027860A (en) 1997-08-13 2000-02-22 Micron Technology, Inc. Method for forming a structure using redeposition of etchable layer
JP3090198B2 (ja) * 1997-08-21 2000-09-18 日本電気株式会社 半導体装置の構造およびその製造方法
JP3221376B2 (ja) 1997-11-07 2001-10-22 日本電気株式会社 半導体装置の製造方法
JPH11168199A (ja) * 1997-12-02 1999-06-22 Nippon Steel Corp 半導体記憶装置及びその製造方法
US5879986A (en) * 1998-02-27 1999-03-09 Vangaurd International Semiconductor Corporation Method for fabrication of a one gigabit capacitor over bit line DRAM cell with an area equal to eight times the used minimum feature
KR100301370B1 (ko) * 1998-04-29 2001-10-27 윤종용 디램셀커패시터의제조방법
JP2000077619A (ja) * 1998-08-27 2000-03-14 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
US6030878A (en) * 1998-11-25 2000-02-29 United Microelectronics Corp. Method of fabricating a dynamic random access memory capacitor
KR100363083B1 (ko) 1999-01-20 2002-11-30 삼성전자 주식회사 반구형 그레인 커패시터 및 그 형성방법
US6214687B1 (en) 1999-02-17 2001-04-10 Micron Technology, Inc. Method of forming a capacitor and a capacitor construction
KR100317042B1 (ko) 1999-03-18 2001-12-22 윤종용 반구형 알갱이 실리콘을 가지는 실린더형 커패시터 및 그 제조방법
US6136661A (en) * 1999-06-14 2000-10-24 Vanguard International Semiconductor Corporation Method to fabricate capacitor structures with very narrow features using silyated photoresist
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KR100546395B1 (ko) * 2003-11-17 2006-01-26 삼성전자주식회사 반도체소자의 커패시터 및 그 제조방법
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Also Published As

Publication number Publication date
JPH05218333A (ja) 1993-08-27
GB9218177D0 (en) 1992-10-14
TW243541B (it) 1995-03-21
GB2259187B (en) 1996-06-19
GB2259187A (en) 1993-03-03
DE4224946A1 (de) 1993-03-04
FR2680913B1 (fr) 1998-04-03
JP2677490B2 (ja) 1997-11-17
US5330614A (en) 1994-07-19
FR2680913A1 (fr) 1993-03-05
IT1259016B (it) 1996-03-11
ITMI921873A1 (it) 1994-01-30

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