[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

IT8647642A0 - Procedimento per la corrosione chimica di pellicole di lega alluminio/rame nella produzione di circuiti integrati - Google Patents

Procedimento per la corrosione chimica di pellicole di lega alluminio/rame nella produzione di circuiti integrati

Info

Publication number
IT8647642A0
IT8647642A0 IT8647642A IT4764286A IT8647642A0 IT 8647642 A0 IT8647642 A0 IT 8647642A0 IT 8647642 A IT8647642 A IT 8647642A IT 4764286 A IT4764286 A IT 4764286A IT 8647642 A0 IT8647642 A0 IT 8647642A0
Authority
IT
Italy
Prior art keywords
aluminum
procedure
production
integrated circuits
copper alloy
Prior art date
Application number
IT8647642A
Other languages
English (en)
Other versions
IT1190491B (it
Inventor
Henry A Majewski
Richard F Landau
Original Assignee
Oerlikon Buehrle Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Buehrle Inc filed Critical Oerlikon Buehrle Inc
Publication of IT8647642A0 publication Critical patent/IT8647642A0/it
Application granted granted Critical
Publication of IT1190491B publication Critical patent/IT1190491B/it

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
IT47642/86A 1985-02-19 1986-02-11 Procedimento per la corrosione chimica di pellicole di lega alluminio/rame nella produzione di circuiti integrati IT1190491B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70249185A 1985-02-19 1985-02-19

Publications (2)

Publication Number Publication Date
IT8647642A0 true IT8647642A0 (it) 1986-02-11
IT1190491B IT1190491B (it) 1988-02-16

Family

ID=24821430

Family Applications (1)

Application Number Title Priority Date Filing Date
IT47642/86A IT1190491B (it) 1985-02-19 1986-02-11 Procedimento per la corrosione chimica di pellicole di lega alluminio/rame nella produzione di circuiti integrati

Country Status (6)

Country Link
JP (1) JPS61189643A (it)
DE (1) DE3603341A1 (it)
FR (1) FR2588279A1 (it)
GB (1) GB2171360A (it)
IT (1) IT1190491B (it)
NL (1) NL8600393A (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5354416A (en) * 1986-09-05 1994-10-11 Sadayuki Okudaira Dry etching method
EP0258698B1 (en) * 1986-09-05 1997-11-12 Hitachi, Ltd. Dry etching method
JPS63238288A (ja) * 1987-03-27 1988-10-04 Fujitsu Ltd ドライエツチング方法
JPH02210826A (ja) * 1989-02-10 1990-08-22 Hitachi Ltd プラズマエッチング方法及び装置
US5779926A (en) * 1994-09-16 1998-07-14 Applied Materials, Inc. Plasma process for etching multicomponent alloys
US6780762B2 (en) * 2002-08-29 2004-08-24 Micron Technology, Inc. Self-aligned, integrated circuit contact and formation method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226665A (en) * 1978-07-31 1980-10-07 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
GB2087315B (en) * 1980-10-14 1984-07-18 Branson Int Plasma Plasma etching of aluminum
JPS57170534A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Dry etching method for aluminum and aluminum alloy
US4468284A (en) * 1983-07-06 1984-08-28 Psi Star, Inc. Process for etching an aluminum-copper alloy

Also Published As

Publication number Publication date
JPS61189643A (ja) 1986-08-23
NL8600393A (nl) 1986-09-16
GB8601485D0 (en) 1986-02-26
DE3603341A1 (de) 1986-08-21
IT1190491B (it) 1988-02-16
FR2588279A1 (fr) 1987-04-10
GB2171360A (en) 1986-08-28

Similar Documents

Publication Publication Date Title
GB2182054B (en) Copper alloy and method of manufacturing the same
FI884725A0 (fi) Kupariseosten käyttö vedenjakelusysteemien komponentteihin
KR890700696A (ko) 구리 및 구리-함유 합금의 엣칭
DE3665078D1 (en) Galvanic bath for the electrodeposition of gold alloys
IT8248207A0 (it) Procedimento per la fabbricazione di substrati per intercollegare componenti elettronici ed articoli fabbricati mediante il detto procedimento
IT1173586B (it) Compositzione e procedimento di rivestimento per alluminio e leghe di alluminio
IT1195108B (it) Lega di rame cromo titanio silicio
IT1135708B (it) Procedimento per la deposizione galvanica di precipitati di rame
IT8647642A0 (it) Procedimento per la corrosione chimica di pellicole di lega alluminio/rame nella produzione di circuiti integrati
IT1135186B (it) Procedimento per la deposizione selettiva,chimica e/o galvanica di rivestimenti metallici,particolarmente per la fabbricazione di circuiti stampati
NO851810L (no) Aluminiumlegeringer for galvanisk anode.
GB2102833B (en) Lead-indium-silver alloy for use in semiconductor devices
IT1196620B (it) Lega metallica a base di rame di tipo perfezionato,particolarmente per la costruzione di componenti elettronici
DE3476225D1 (en) Bath for the galvanic deposition of gold alloys
AU535304B2 (en) Palladium-nickel alloy electrodeposition bath
GB2109813B (en) Anti-corrosion copper alloys
IT8448429A0 (it) Procedimento per la deposizione senza corrente di metalli o semi-conduttori
IT8148581A0 (it) Procedimento per la ossidazione di substrati di arseniuro di gallio
AU535263B2 (en) Palladium-nickel alloy electrodeposition bath
IT8368038A0 (it) Procedimento per la fabbricazione in fonderia di pezzi modellati di leghe metalliche ossidabili
IT8721821A0 (it) Processo per la deposizione galvanica di leghe di oro/rame/zinco di scarsa caratura.
IT8368019A0 (it) Mediante galvanoplastica procedimento per la fabbricazione di oggetti metallici e metallizzati
ES528557A0 (es) Perfeccionamientos en la fabricacion de elementos contactores metalicos para componentes electronicos
HUT34780A (en) Processor fot the galvanic speretaion of hard gold plating for electronic purposes
IT8220253A0 (it) Procedimento per la fabbricazione di piastre in lega di alluminio.