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GB999679A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB999679A
GB999679A GB12319/63A GB1231963A GB999679A GB 999679 A GB999679 A GB 999679A GB 12319/63 A GB12319/63 A GB 12319/63A GB 1231963 A GB1231963 A GB 1231963A GB 999679 A GB999679 A GB 999679A
Authority
GB
United Kingdom
Prior art keywords
solder
fluid
carrier plate
terminal element
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB12319/63A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
BBC Brown Boveri France SA
Original Assignee
Brown Boveri und Cie AG Switzerland
BBC Brown Boveri France SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brown Boveri und Cie AG Switzerland, BBC Brown Boveri France SA filed Critical Brown Boveri und Cie AG Switzerland
Publication of GB999679A publication Critical patent/GB999679A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

999,679. Sem-conductor devices. BROWN, BOVERI & CO. Ltd. March 28, 1963 [March 30, 1962], No. 12319/63. Heading H1K. The carrier plate 2 (e.g. of molybdenum) and top electrode 3 (which may be of gold) of a semi-conductor element 1, Fig. 1, are connected with respective terminal elements 4, 5, by layers 10, 11 of a solder which is fluid at the operating temperature of the device. This prevents breakage of the soldered connection which thermal stresses produce when hard solders are employed, allows the use of a thinner carrier plate with improved heat transfer to the terminal element 4 (also acting as a heat sink) and prevents damage to the semi-conductor element by the high temperatures associated with hard soldering. When fluid, the solder layer 11 is retained by capillary forces and by surface tension but when the device is to be subjected to high accelerations the outer edge of the solder is preferably sealed by a layer 12 of silicon lacquer or, as shown in Fig. 2, by a ring 13 of silicon rubber or of lead retained by a groove in the terminal element 5. The carrier plate 2 may be dispensed with and the element 1 soldered directly by the fluid solder to terminal element 4. To prevent the solder from solidifying at high temperatures due to the formation of higher melting temperature alloys or compounds with the material of the adjacent surfaces the latter (electrode 3 and terminal element 4 when the carrier plate 2 is not employed) are preferably covered by layers of molydbdenum, or tungsten with which the solder forms no alloy or compound. The solder may comprise those metals and alloys which are fluid in the range of 30‹ to 130‹ C. Gallium (melting point 29À8‹ C.) is mentioned. Mercury is also stated to be suitable.
GB12319/63A 1962-03-30 1963-03-28 Semiconductor device Expired GB999679A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH392762A CH396221A (en) 1962-03-30 1962-03-30 Semiconductor device

Publications (1)

Publication Number Publication Date
GB999679A true GB999679A (en) 1965-07-28

Family

ID=4266476

Family Applications (1)

Application Number Title Priority Date Filing Date
GB12319/63A Expired GB999679A (en) 1962-03-30 1963-03-28 Semiconductor device

Country Status (3)

Country Link
CH (1) CH396221A (en)
DE (1) DE1205625B (en)
GB (1) GB999679A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4241167A (en) * 1979-05-25 1980-12-23 The United States Of America As Represented By The Secretary Of The Navy Electrolytic blocking contact to InP
DE112008000743B4 (en) * 2007-03-22 2013-12-24 Toyota Jidosha Kabushiki Kaisha Power module and inverter for vehicles

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE510598C (en) * 1926-05-10 1930-10-21 Westinghouse Brake & Signal Electric dry rectifier
NL190331A (en) * 1954-08-26 1900-01-01

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4241167A (en) * 1979-05-25 1980-12-23 The United States Of America As Represented By The Secretary Of The Navy Electrolytic blocking contact to InP
DE112008000743B4 (en) * 2007-03-22 2013-12-24 Toyota Jidosha Kabushiki Kaisha Power module and inverter for vehicles
DE112008000743B8 (en) * 2007-03-22 2014-03-13 Toyota Jidosha Kabushiki Kaisha Power module and inverter for vehicles

Also Published As

Publication number Publication date
DE1205625B (en) 1965-11-25
CH396221A (en) 1965-07-31

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